TWI239562B - Cleaner disc - Google Patents
Cleaner disc Download PDFInfo
- Publication number
- TWI239562B TWI239562B TW92129636A TW92129636A TWI239562B TW I239562 B TWI239562 B TW I239562B TW 92129636 A TW92129636 A TW 92129636A TW 92129636 A TW92129636 A TW 92129636A TW I239562 B TWI239562 B TW I239562B
- Authority
- TW
- Taiwan
- Prior art keywords
- bristles
- wafer
- cleaning
- item
- cleaning sheet
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 19
- 238000011109 contamination Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000005201 scrubbing Methods 0.000 claims description 20
- 230000001680 brushing effect Effects 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 15
- 239000000356 contaminant Substances 0.000 claims description 12
- 239000003344 environmental pollutant Substances 0.000 claims description 12
- 231100000719 pollutant Toxicity 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000003929 acidic solution Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 75
- 238000005516 engineering process Methods 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013043 chemical agent Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 micro-roughness Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
1239562 ^--- 五、發明說明（1) 發、明所屬之技術領域： 物之清潔片，特別是 片，以便利用此清潔 本發明係提供一種去除刷毛污染 〜種對刷毛污染物具有親和力之清潔 片去除沾附於刷毛之製程污染物。 先前技術： 在超大型積體電路（ULSI)製程中，晶圓、、主哞沾杜a 、淨度，疋衫響兀件（device)品質及其可靠度 ^ reliability)最重要的因素之一，尤其是當X 精進到深次微米0. 1 3 mm以下的領域，元株^技打 晶圓清洗的目的，主要在於清除晶圓表面的污染物 (contamination)，如微粒（particies)、有機化合物 (organic compundS)以及金屬離子（metal i〇ns)等。 換言之，唯有使晶圓的表面達到非常高的潔淨度，製作出 來的半導體電子元件方能符合所需之電器特性1239562 ^ --- 5. Description of the invention (1) Technical field of the invention: cleaning tablets, especially tablets, in order to use this cleaning. The present invention provides a method for removing bristles contamination ~ The cleaning sheet removes process contaminants attached to the bristles. Previous technology: In the ultra-large integrated circuit (ULSI) process, one of the most important factors of the wafer, the main chip, the purity, the quality of the device and its reliability ^ reliability) Especially when X is advanced to the sub-micron area below 0.13 mm, the purpose of wafer cleaning is mainly to remove contamination on the wafer surface, such as particles (particies), organic Compounds (organic compundS) and metal ions (metal ion). In other words, only by making the surface of the wafer very clean, the fabricated semiconductor electronic components can meet the required electrical characteristics
〇十億個以上，且製造流程超過數百個步驟。因此在 ^通常需要非常潔淨的晶圓表面來製作如此精密複雜的 ，时。有鑑於此，如何清洗晶圓以達到超潔淨度的需求， 疋目前ULSI半導體廒製椁中最重要也最嚴謹的步驟之一。〇 More than one billion, and the manufacturing process exceeds hundreds of steps. Therefore, it is often necessary to produce such a sophisticated and complex wafer surface with very clean wafers. In view of this, one of the most important and rigorous steps in the current ULSI semiconductor manufacturing process is how to clean the wafers to achieve ultra-cleanliness requirements.
(electrical characteristics) 〇 晶圓之清洗方式分為濕式化學洗淨技術（wet chemical clean technology)以及物理洗淨技術 (physical cleaning technology)。一般而言，濕式化 學洗淨技術仍以RCA洗淨程式為主，即利用高純度的化學(electrical characteristics) 〇 Wafer cleaning methods are divided into wet chemical clean technology (wet chemical clean technology) and physical cleaning technology (physical cleaning technology). Generally speaking, the wet chemical cleaning technology is still based on the RCA cleaning program, which uses high-purity chemical
第6頁 1239562 i、發明說明（2) 藥~劑，調配出 物。至於物理 化學藥劑，而 要係運用於製 particles) 學氣相沈積或 可以有效去除 請參照第 刷洗槽1 0、清 1 0具有一刷洗 清洗溶液分配 管柱2 0 2。其1 位於刷洗槽開 平延伸之第一 第二管柱302 同前所述，刷 當欲對置 程序時，利用 1 0之刷洗槽開 (chuck) ， 後，晶圓與刷 方式去除位於 值得注意 時，酸性溶液 適當之清洗溶液，以去除晶圓表面之污染 洗淨’主要係利用物理原理和物理作用取代 1 a曰圓表面進行清洗。此種洗淨技術，最主 程誘發之微粒污染（pr〇cess —induced 例如’在對晶圓進行蝕刻、離子植入、化 化學機械研磨等程序後，運用物理洗淨技術 附著於晶圓表面之微粒。 一圖，顯示清洗晶圓之刷洗裝置至少包括了 洗溶液分配槽2 0以及刷毛運作槽3 〇。刷洗槽 槽開口 1 0 1，而清洗溶液分配槽2 〇則包括由 槽20延伸出之酸性溶液管柱2〇1和去離子水 7 ’酸性溶液管柱2 0 1與去離子水管柱2 0 2係 口 1 0 1之正上方。至於，由刷毛運作槽3 〇水 管柱301上，具有與第一管柱3〇1縱向連接之 且在第一管柱30 2之底端具有一刷毛303。 毛3 0 3亦位於刷洗槽開口 1 〇 1正上方。 於卡式晶舟（cassette)中之晶圓進行刷洗 一機益手臂（robot)將此晶圓移入刷洗槽 口 101内。在刷洗槽10中設有複數個抓夾 「用以抓取並固定晶圓。在刷毛3 〇 3接觸晶圓 毛3 0 3會各自進行旋轉，以藉由這樣的物理 晶圓表面之污染微粒。 的是，在對晶圓進行物理性洗淨程序的同 管柱201會喷灑出含有檸檬酸（citric 1239562 五、發明說明（3) a e i d)之溶液，以幫助清洗晶圓表面。之後，停止酸性溶 液管柱201之喷灑，而由去離子水管柱20 2喷出高純度去離 子水，配合刷毛3 0 3不間斷的刷洗作用，不但可去除殘留 於晶圓表面之酸性溶液，更可進一步地移除位於晶圓表面 之污染物。 上述刷毛3 0 3在使用一段時間之後，其去除晶圓表面 微粒之能力不但顯著下降，更嚴重的是，此刷毛3 0 3反而 會受到晶圓表面微粒之污染，繼而污染下一片欲進行清洗 程序之晶圓。請參照第二圖，橫軸為晶圓批數（1 ot)， 縱軸為刷毛之污染程度（小於零表示此刷毛具有去除晶圓 表面污染之能力，大於零則代表刷毛已經被污染）。如圖 所示，在對二批（5 0片）晶圓進行清潔程序之後，刷毛已 被晶圓表面之污染物所污染。之後，若繼續利用已污染之 刷毛清潔下一批晶圓，彳年於晶圓表面之污染物不僅無法被 移除，此晶圓反而會被刷毛污染的更嚴重。 綜上所述，如何去除沾附於刷毛上之污染物，進而避 免晶圓受到污染物之污染，成為半導體工業界重要的課題 —— 〇 發明内容： 本發明之主要目的在於提供一種去除刷毛污染物之清 潔片。 本發明之再一目的在於提供一種清潔刷毛之方法。 本發明之又一目的在於提供一種清洗晶圓表面之方Page 6 1239562 i. Description of the invention (2) Medicines ~ agents, preparations. As for the physical chemical agent, it should be applied to particles) to learn vapor deposition or it can be effectively removed. Please refer to the scrubbing tank 10, cleaning 1 0 has a scrubbing cleaning solution distribution column 2 0 2. The first and second pipe columns 302 are located at the first and second extensions of the brushing tank. As mentioned above, when the brush is to be opposed, the brushing tank is used for cleaning. In this case, the acidic solution is a suitable cleaning solution to remove the contamination of the wafer surface. The cleaning is mainly based on the use of physical principles and physical effects instead of 1 a round surface for cleaning. This cleaning technology is the main process-induced particle contamination (such as' after etching, ion implantation, chemical mechanical polishing, etc. of the wafer, the physical cleaning technology is used to attach to the wafer surface. A picture showing that the brush cleaning device for cleaning wafers includes at least a washing solution distribution tank 20 and a bristle operation groove 30. The brushing tank groove opening 1 0 1 and the cleaning solution distribution groove 2 0 include an extension from the groove 20 The acid solution column 201 and the deionized water 7 ′ acid solution column 201 and the deionized water column 2 0 2 are directly above the port 1 0 1. As for the bristles, the groove 3 〇 water column 301 It has a longitudinal connection with the first tube string 301 and a bristle 303 at the bottom end of the first tube string 302. The bristles 3 03 are also located directly above the opening 101 of the scrubbing tank. On the cassette wafer boat The wafer in (cassette) is brushed by a robot. The robot moves the wafer into the brushing slot 101. In the brushing tank 10, a plurality of grippers "for gripping and fixing the wafer. 3 〇3 contact wafer hair 3 0 3 will each rotate, so that The contamination particles on the surface of the same physical wafer. The same column 201 that is used for the physical cleaning process of the wafer will be sprayed with a solution containing citric acid (citric 1239562 V. Description of the invention (3) aeid), To help clean the surface of the wafer. After that, the spraying of the acidic solution column 201 is stopped, and the high-purity deionized water is sprayed from the deionized water column 20 2, and the uninterrupted brushing action of the bristles 3 0 3 can not only remove the residue The acidic solution on the wafer surface can further remove the contaminants located on the wafer surface. After the bristles 303 have been used for a period of time, their ability to remove particles on the wafer surface is not only significantly reduced, but more seriously, This bristles 3 0 3 will be contaminated by particles on the wafer surface, which will contaminate the next wafer to be cleaned. Please refer to the second figure, the horizontal axis is the number of wafer batches (1 ot), and the vertical axis is the number of bristles. Degree of contamination (less than zero indicates that the bristles have the ability to remove wafer surface contamination, and greater than zero indicates that the bristles have been contaminated). As shown in the figure, after cleaning the two batches (50 pieces) of wafers , The bristles have been contaminated by contaminants on the wafer surface. After that, if the next batch of wafers is cleaned with the contaminated bristles, the contamination on the wafer surface in the next year will not only be removed, but the wafer will be contaminated. The bristles are more contaminated. In summary, how to remove the pollutants attached to the bristles and thereby prevent the wafer from being polluted by pollutants has become an important subject in the semiconductor industry. 〇 Summary of the invention: The main purpose of the present invention It is to provide a cleaning sheet for removing the bristles. Another object of the present invention is to provide a method for cleaning the bristles. Another object of the present invention is to provide a method for cleaning the surface of a wafer.
1239562 m 五、發明說明（4) 法、。 本發明提供_ # + , 之方法。首务’、種在半導體製程中對晶圓進行清洗程序 對已完成第一 ’、對晶圓進行第一程序。接著，利用一刷毛 位於晶圓表：ΐ序t晶圓進行清洗程序’ “物理性的去除 發明之特徵為，物。隨後，對晶圓進行第二程序。本 清潔片，並ί刷iiii述清洗程序之前’使刷毛接觸一 u h ^ ^ 毛於α潔片上表面旋轉，以利用塗佈於清 /¾巧上表面之务與4 匕予物質，吸附沾黏於刷毛上之污染物。 實施方式：1239562 m V. Description of the Invention (4) Method. The present invention provides a method of _ # +,. The first task is to perform a cleaning process on the wafer in the semiconductor manufacturing process. Next, a bristle is located on the wafer table: the cleaning process of the sequence t wafer is performed. "The physical removal of the invention is characterized by objects. Then, the wafer is subjected to a second procedure. This cleaning sheet is described in the following paragraphs. Before the cleaning procedure, 'bristle the bristles into contact with a uh ^ ^ bristles on the top surface of the α cleansing sheet to rotate and use the coating on the top surface of the cleansing and cleaning materials to absorb the pollutants sticking to the bristles. :
毛接觸、生=f供種去除刷毛污染物之清潔片’藉由將用 進而利用已塗佈於清潔片上表面，且⑽ 二清洗晶圓表面之方法。有關“ 三圖，顯示刷洗裝置概少包括刷洗槽50、 刷運乍槽60以及分配槽70。刷洗槽50具有一刷jΜ 5 0 1，當欲斜曰圓、仓—a, L 部J /先槽開口The hair contact and growth = f is a cleaning sheet for removing the bristles and contaminants. The method is to use the cleaning sheet which has been coated on the cleaning sheet and clean the wafer surface. With regard to the three figures, it is shown that the scrubbing device rarely includes a scrubbing tank 50, a brushing tank 60, and a distribution tank 70. The scrubbing tank 50 has a brush jM 5 0 1, Slot opening
會將晶圓由卡式晶舟（未顯示）中取出 y未顯不） 開口 501正上方，而置入刷洗槽50内冑。者移在刷洗槽 請繼續參閱第三圖。刷毛運作槽 作槽60的側壁上具有與刷毛運作 ；^。在刷毛運 601，並且在第一管柱6〇1前端處，具接之第一管柱 由第—管柱601向The wafer will be taken out of the cassette wafer boat (not shown) (y is not shown) directly above the opening 501 and placed in the scrubbing tank 50. The person moves in the scrubbing tank. Please continue to the third picture. The bristle operation groove The side wall of the groove 60 has the operation with the bristles; ^. The bristles are transported 601, and at the front end of the first tube string 601, the first tube string connected from the first tube string 601 to
1239562 五、發明說明（5) ^ :延伸之第二管柱6 0 2。如圖所示，刷毛6 0 3係裝設於第二 吕柱6 〇 2之底端，且位於刷洗槽開口 5 0 1之正上方。在一實 施例2=刷毛之材質為聚合物（polymer)。 ^二參ί第三圖’分配槽70包括了由分配槽70向外延 ，一喷管7〇1與第二喷管7〇2。其宁，第一喷管7〇1可 θ ^性溶液，以利用此溶液中所含之化學成分，移除 立^ =圓表面之聚合物微粒。第二喷管70 2可噴出高純度 j舟生子水’以稀釋掉殘留於晶圓上之酸性溶液，並更進 一步清洗晶圓表面，將半導體製程中所產生之污染物移 同前所述，第一喷管7〇1與第二喷管7〇2亦位於刷洗槽 齡口 50 1之上方。在欲塗佈光阻層於晶圓上表面之前、沈 積膜層於晶圓上表面之後、對晶圓進行化學機械研磨程序 之後、或在對晶圓進行其他程序之前或之後，會在晶圓上 f面產生汚染物，這些$染物包括金屬、微粗糙以及微粒 等。為了去除晶圓表面之污染物，以維持晶圓之潔淨度， 對此晶圓施以清洗程序。 在進行清洗程序之前，操作人員會將承放於卡式晶舟 中之晶圓運送至刷洗裝置40。接著，一機器手臂（未顯 示）會把晶圓自卡式晶舟中取出，移至刷洗槽開口 5〇 上方後’緩慢置入刷洗槽5 0内部。在刷洗槽5 〇之内部具有 複數個抓夾’這些抓夾可用以抓取並固定上述晶圓，使其 在進行後續清洗程序時，不至於因鬆脫而造成損壞。 此外，在進行清洗程序之前，亦會先利用另一機器手 臂（未顯示）將第一管柱6 0 1由刷洗槽開口 5 〇丨正上方移至 1239562 ——___ ' ^ — ~ ---— 玉；、發明說明（6) 刷，洗槽50外（如第四圖所示），以進行清潔刷毛6 0 3之動 作。接著，請參閱第五圖。將刷毛6 0 3接觸一清潔片9 0 0。 在此清潔片9 0 0之上表面已塗佈一層與刷毛6 0 3污染物具有 親和力之化學物質。在一較佳實施例中，此化學物質為氮 化矽。當刷毛6 0 3接觸清潔片9 0 0後，刷毛6 〇 3會在清潔片 9 〇 〇上進行旋轉，以利用塗佈在清潔片9 0 0上表面之化學物 質，吸附沾黏於刷毛6 0 3上之污染物（此過程需有去離子 水之輔助）。亦即，利用此清潔片9 0 0，可帶走刷毛6 0 3污 染物，而在後續製程利用此刷毛6 0 3對晶圓進行清洗程序 時，晶圓不會反而被刷毛6 0 3污染物所污染。隨後，以機 器手臂將第一管柱6 0 1移回刷洗槽開口 5 0 1正上方。 將晶圓以抓夾固定於刷洗槽5 0中後，與刷毛運作槽6 〇 連接之第一管枉601會向下降，而使刷毛60 3直接與晶圓接 觸。接著，晶圓會進行高速旋轉，且同時刷毛6 〇 3亦會自 轉’以藉由這樣的物理機制，去除位於晶圓上表面之污染 物。 在利用刷毛6 0 3對晶圓進行物理性清洗程序的同時， 由分配槽7 0孔洞7 〇 3向外延伸出之第一喷管7〇1，其喷口會 喷出酸性溶液，以利用其所含之化學成分幫助洗淨晶圓表 面。在一較佳實施例中，此酸性溶液主要之化學組成為檸 檬酸。 其後，停止酸性溶液之喷灑，而藉由第二喷管7 0 2管 口噴灑出之高純度去離子水，將上述酸性溶液清洗程序 後’殘留於晶圓表面之化學藥劑稀釋。更有甚者，在對晶1239562 V. Description of the invention (5) ^: Extending second pipe string 602. As shown in the figure, the bristles 603 are installed at the bottom end of the second Luzhu 602 and directly above the opening 501 of the scrubbing tank. In one embodiment 2 = the material of the bristles is polymer. ^ The second figure of the third reference, the distribution tank 70 includes an extension from the distribution tank 70, a nozzle 701 and a second nozzle 702. In other words, the first nozzle 701 can be a θ ^ solution, so as to use the chemical components contained in the solution to remove polymer particles with a round surface. The second nozzle 702 can spray high-purity jzhoushengzi water 'to dilute the acid solution remaining on the wafer, and further clean the wafer surface, and move the pollutants generated in the semiconductor process as described above. The first nozzle 701 and the second nozzle 702 are also located above the scrub port 501. Before the photoresist layer is applied on the upper surface of the wafer, after the film layer is deposited on the upper surface of the wafer, after the chemical mechanical polishing process is performed on the wafer, or before or after other processes are performed on the wafer, the Contaminants are generated on the f-side. These dyes include metals, micro-roughness, and particles. In order to remove the contaminants on the surface of the wafer to maintain the cleanliness of the wafer, a cleaning process is performed on the wafer. Before the cleaning process is performed, the operator transfers the wafer held in the cassette wafer boat to the brush cleaning device 40. Next, a robotic arm (not shown) will take the wafer out of the cassette wafer boat and move it over the opening 50 of the scrubbing tank, and then slowly insert it into the scrubbing tank 50. Inside the scrubbing tank 50, there are a plurality of grippers. These grippers can be used to grip and fix the wafer, so that it will not be damaged due to loosening during the subsequent cleaning process. In addition, before the cleaning process is performed, another robotic arm (not shown) will be used to move the first column 6 0 1 from the opening of the scrubbing tank 5 〇 丨 right above 1235562 ——___ '^ — ~ --- — Jade; Description of the invention (6) Brush, washing the outside of the bath 50 (as shown in the fourth figure), for cleaning the bristles 603. Next, please refer to the fifth figure. Touch the bristles 6 0 3 to a cleaning sheet 9 0 0. The surface of this cleaning sheet 900 has been coated with a chemical substance having an affinity for the pollutants of the bristles 603. In a preferred embodiment, the chemical substance is silicon nitride. When the bristles 600 come into contact with the cleaning sheet 900, the bristles 603 will rotate on the cleaning sheet 9000 to use the chemicals coated on the cleaning sheet 900 to adsorb and stick to the bristles 6 0 3 pollutants (this process needs the assistance of deionized water). That is, using this cleaning sheet 9 0 0, the bristles 6 0 3 pollutants can be taken away, and when the wafer is cleaned using the bristles 6 0 3 in subsequent processes, the wafers will not be contaminated by the bristles 6 0 3 instead. Property pollution. Then, use the machine arm to move the first pipe string 601 back to directly above the scrubbing bath opening 501. After the wafer is fixed in the scrubbing tank 50 by the gripper, the first tube 601 connected to the bristle operation tank 60 will be lowered, and the bristles 60 3 will directly contact the wafer. Then, the wafer will rotate at a high speed, and at the same time, the bristles 603 will also rotate 'to remove the contaminants on the upper surface of the wafer by using such a physical mechanism. While the wafers are physically cleaned by using the bristles 603, the first nozzle 701 extending outward from the 70 holes 703 of the distribution trough will have an acid solution sprayed out of the nozzle to make use of it. The chemical composition helps clean the wafer surface. In a preferred embodiment, the main chemical composition of this acidic solution is citric acid. Thereafter, the spraying of the acid solution was stopped, and the high-purity deionized water sprayed from the nozzle of the second nozzle 702 was used to dilute the chemical agent remaining on the wafer surface after the above-mentioned acid solution cleaning procedure. What's more, in the opposite
1239562 五r發明說明（7)1239562 Five r invention description (7)
Bl·施以去離子水清洗程序時，加上刷毛6 0 3不間斷之物理 性清潔作用，可使晶圓表面之污染物被更進—止^ > ^ 步的有效移 除 使用本發明之方 1 ·請參閱第六圖 污染程度（小於零表 力’大於零則代表刷 後對兩批（共50片） 清潔晶圓表面之能力 染物，而污染下一片 揭露之清潔片清除刷 著下降，且在後續利 命亦明顯延長。 2 ·由於本發明中 物，而相對的延長刷 可減少更換刷毛所必 法’具有下列優點： ，橫軸為晶圓批數，而 示此刷毛具有去除晶圓 毛已被污染）。如圖所 晶圓進行清洗程序後， ，此刷毛反而會沾黏晶 欲進行清洗之晶圓。在 毛污染物後，刷毛之污 用此刷毛清洗晶圓時， 之清潔片可吸附位於刷 毛在半導體製程中的使 須負擔之成本。 縱軸為 表面污 示，當 刷毛不 圓上表 利用本 染程度 刷毛之 毛上之 用壽命 刷毛之 染之能 刷毛先 但失去 面之污 發明所 不僅顯 使用壽 污染 ’因此 士政t ί月雖以一較佳貫例闡明如上，然其並非用以限定 本發=神與發明實體’僅止於此一實施例爾。是以，在 不脫離本發明之精神與範圍内所作之修改，均應包含在下 述之申請專利範圍内。Bl · When the deionized water cleaning procedure is applied, plus the uninterrupted physical cleaning effect of the bristles 6 0 3, the contaminants on the wafer surface can be further advanced—stop ^ > ^ effective removal of the step using the present invention Method 1 · Please refer to the sixth figure. The degree of pollution (less than zero surface force 'and greater than zero indicates the ability to clean the surface of the wafer in two batches (a total of 50 pieces) after brushing, while contaminating the next exposed cleaning sheet to remove the brush. Decreased, and the life is significantly prolonged in the follow-up. 2 · Because of the invention, the relative extension brush can reduce the method necessary to replace the bristles' has the following advantages:, the horizontal axis is the number of wafer batches, and this bristles have Removal of wafer hair has been contaminated). After the cleaning process is performed on the wafer as shown in the figure, the bristles will instead stick to the wafer to be cleaned. After bristles are contaminated, the bristles are contaminated. When cleaning the wafer with the bristles, the cleaning sheet can absorb the cost of the bristles in the semiconductor process. The vertical axis shows surface contamination. When the bristles are not round, the surface uses the degree of bristles on the bristles. The bristles on the bristles with the lifespan bristles can be used to brush the bristles. Although it is clarified as above with a better example, it is not used to limit the present invention = the god and the invention entity only to this embodiment. Therefore, all modifications made without departing from the spirit and scope of the present invention should be included in the scope of patent application described below.
」第12頁 1239562 si式簡單說明 、 藉由以下詳細之描述結合所附圖示，將可輕易的了解 上述内容及此項發明之諸多優點，其中： 第一圖為習知技術之刷洗裝置示意圖，顯示其具有一 刷洗槽、一酸性溶液分配槽以及一刷毛運作槽； 第二圖為利用刷毛對晶圓進行清洗程序後，刷毛污染 程度之示意圖，顯示刷毛在清洗兩批晶圓時，刷毛仍有清 潔作用；Page 121239562 si-style simple description, with the following detailed description combined with the attached drawings, you can easily understand the above content and many advantages of this invention, of which: The first picture is a schematic diagram of the brushing device of the conventional technology It shows that it has a scrubbing tank, an acid solution distribution tank, and a bristle operation tank. The second figure is a schematic diagram of the degree of bristles contamination after the wafers are cleaned with the bristles. It shows the bristles when the bristles clean two batches of wafers. Still has a cleaning effect;
第三圖為本發明之刷洗裝置示意圖，顯示刷洗裝置具 有一刷洗槽、一分配槽以及一刷毛運作槽； 第四圖為本發明之刷洗裝置示意圖，位於刷毛運作槽 上之第一管柱已由刷洗槽開口正上方移至刷洗槽外； 第五圖為本發明刷毛清潔之示意圖，顯示利用一清潔 片吸附刷毛上之污染物；以及 第六圖為利用本發明之清潔片對刷毛進行清潔後，以 此刷毛清洗晶圓，刷毛被晶圓污染物污染之情形。The third figure is a schematic view of the brushing device of the present invention, showing that the brushing device has a brushing tank, a distribution tank, and a bristle operation slot; the fourth figure is a schematic view of the brushing device of the present invention, the first pipe string on the bristle operation slot has been Moved from directly above the opening of the scrubbing tank to the outside of the scrubbing tank; the fifth diagram is a schematic diagram of cleaning the bristles of the present invention, showing the use of a cleaning sheet to adsorb pollutants on the bristles; and the sixth diagram is to use the cleaning sheet of the present invention to clean the bristles Then, the wafer is cleaned with this bristles, and the bristles are contaminated by wafer contamination.
第13頁Page 13
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92129636A TWI239562B (en) | 2003-10-24 | 2003-10-24 | Cleaner disc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92129636A TWI239562B (en) | 2003-10-24 | 2003-10-24 | Cleaner disc |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200515503A TW200515503A (en) | 2005-05-01 |
| TWI239562B true TWI239562B (en) | 2005-09-11 |
Family
ID=37007471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92129636A TWI239562B (en) | 2003-10-24 | 2003-10-24 | Cleaner disc |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI239562B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115672801B (en) * | 2022-06-10 | 2024-08-30 | 苏州智程半导体科技股份有限公司 | Single wafer brushing device capable of automatically replacing brush head |
-
2003
- 2003-10-24 TW TW92129636A patent/TWI239562B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200515503A (en) | 2005-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW411522B (en) | A semiconductor device washing apparatus and a method of washing a semiconducotr device | |
| TW414965B (en) | Methods and apparatus for cleaning semiconductor substrates after polishing of copper film | |
| JP2010109384A (en) | Method of removing metal in scrubber | |
| JPH09223664A (en) | Cleaning device for semiconductor wafer | |
| TW200527498A (en) | Substrate treating apparatus and substrate treating method | |
| JP2009543344A (en) | Post-etch wafer surface cleaning with liquid meniscus | |
| TWI494426B (en) | Substrate drying processes through the use of solvents and systems | |
| US20160083676A1 (en) | Method and apparatus for high efficiency post cmp clean using engineered viscous fluid | |
| EP1077474A2 (en) | Backside etching in a scrubber | |
| US20140261537A1 (en) | Clean function for semiconductor wafer scrubber | |
| KR20120102707A (en) | Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber | |
| TW201325744A (en) | Method for treating pollutant of workpiece provided with yttrium oxide coating layer | |
| US6127289A (en) | Method for treating semiconductor wafers with corona charge and devices using corona charging | |
| JP4317759B2 (en) | Method for removing residues after etching and stripping steps in CORAL films | |
| US20080053486A1 (en) | Semiconductor substrate cleaning apparatus | |
| CN111009482B (en) | Wafer cleaning device and wafer cleaning equipment | |
| TWI239562B (en) | Cleaner disc | |
| WO2023145522A1 (en) | Substrate processing method and substrate processing apparatus | |
| US7410814B1 (en) | Process and apparatus for cleaning silicon wafers | |
| JP4507365B2 (en) | Substrate edge cleaning equipment | |
| TW473780B (en) | Post-plasma processing wafer cleaning method and system | |
| US20090217950A1 (en) | Method and apparatus for foam-assisted wafer cleaning | |
| KR20080057088A (en) | Wet cleaning equipmemt of wafer and wet cleaning method of the same | |
| JPH01184831A (en) | Cleaning process | |
| CN111199874A (en) | Silicon wafer cleaning process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |