TWI238595B - Bandpass amplifier - Google Patents

Abstract

The present invention discloses a bandpass amplifier having gain and bandpass performance. The bandpass amplifier includes an input match unit for matching the gain of the amplifier and having a first filter response; a first bias unit electrically connected to the input match unit for driving the first terminal of the amplifier and having a first high pass filter response; a gain stage electrically connected to the first bias unit for providing the flat gain of the amplifier; a second bias unit electrically connected to the gain stage for driving the second terminal of the amplifier and having a second high pass filter response; and an output match unit electrically connected to the second bias unit for matching the gain of the amplifier and having a second filter response.

Description

1238595 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a monolithic microwave integrated circuit (MjyQC), which is particularly related to an amplifier H with gain and bandpass effects, which can be used for microwave to millimeter Wireless communication system (wireless communication system). [Previous technology] Between the microwave and millimeter-wave bands, the high integration of monolithic microwave integrated circuits has been widely demanded for a wide range of applications, such as wireless broadband systems, wireless bands, 40GHz to 60GHz mobile communication system (mobile communication), high-speed millimeter-wave local area network with frequency band of 59GHz to 62GHz, and automotive sensors with frequency band of 24GHz to 77GHz. In a typical radio transceiver system, monolithic microwave integrated circuit chips and off-chip filters are required to obtain maximum efficiency and lowest cost. However, external chip tear wave filters that include passband selection filters and image removal filters (image_rejection filters) are usually block-shaped, and the relatively high price makes it difficult to reduce costs. Commonly known bandpass amplifier. *

Design concepts of amplifiers, such as published by Nguyen et al. In IEEE J. Solid-State Circuits, No. 27, pages 123-127, January 1992, "a silicon-based bipolar monolithic RF band-pass amplifier (A bipolar monolithic RF bandpass amplifier) ", which reveals that the passband response is caused by a redundant parallel resonator formed by an additional inductor and a base-emitter capacitor. The passband response shows that the center frequency is 1.5GHZ, the gain is 8dB, and the noise index is 6_4dB. A complementary metal-oxide-semiconductor (CMOS) band-pass amplifier, such as published by Wu et al. In ieEE J

Solid-State Circuits, No. 32, pp. 159-168, February 1997, The design of a 3 volt 900MHz complementary metal oxide semiconductor bandpass amplifier (The design fafa 3_v · 900-MHz CMOS bandpass amplifier ) ", With positive feedback and improved quality factor Q technology, can be obtained between 869-893 MHz. For global satellite positioning system applications, a 16GHz complementary metal-oxide-semiconductor bandpass amplifier, such as by Hernandez Published in 2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 5 1238595

Digest, pages 33-37, April 2000,-3 volts and 1.6 GHz differential complementary metal-oxide-semiconductor band-pass amplifier circuit (A 3 v, L6 GRz differential CMOS bandpass applied to global positioning system) amplifier chain for a GPS receiver) ", is designed to 'out' which uses a combined inductor-capacitor (LC) resonator at the extremes to produce a passband effect. Although the above results successfully present an integrated bandpass filter And gain amplifier on a single chip, but its frequency band is limited to several GHz applications. In the millimeter wave band, a band-pass amplifier implemented using a pseudo-type high-speed electron mobility transistor (PHEMT), such as by Sasaki Published by others · 2001 IEEE MTT-S Int. Microwave Symp · Dig., Pp. 1067_1918, June 2001 Pseudo-type high-speed electron mobility transistors using compact and flat gains from 20 GHz to 30 GHz The wide passband monolithic microwave integrated circuit power amplifier (20-30 GHz broadband MMIC calls for power amplifiers with compact flat gain PHEMT cells), which has a frequency between 20 GHz and 30 GHz in the pass band. With a gain of 21dB and a 22-dBm dagger compression point in the range. A 4GHz low-pass amplified state system in the form of a Butterworth or Chebyshev filter was revealed by Rooney et al. 2002 IEEE MTT-S Int.

Microwave Symp · Dig ·, pp. 1915-1918, June 2002, A filter synthesis technique. Applied to the design of multistage broadband microwave amplifiers). "See U.S. Patent No. 4,984,292, issued to Millen, entitled" Band Pass Amplifier and Receiver Using Band Pass Amplifier (5 Milk and Receiver Using amp / amp / er) ", which An active band-pass amplifier is disclosed. The active band-pass amplifier includes a single-stage operational amplifier, a bridged T-type network single-frequency elimination of ripple gain in a negative feedback path of the amplifier, and a phase shift. A correction capacitor is connected to a bridge-type (bridgedyp-type network single-frequency cancellation filter to affect a sufficient amount of phase shift to maintain a proper feedback, so that the amplifier system is stable. About the circuit capabilities and Phase shift amount of the bridged T-type network single frequency, eliminating the phase shifter to generate a phase shift 'to cause the amplifier to vibrate | When the network is placed in the feedback path, and corrected Capacitive influence a correction phase variation to provide stability of the amplifier. Such a bandpass amplifier provides a high gain and high quality factor, and the gain is higher than the traditional signal amplifier. The gain of the traditional single-stage amplifier is typically approximately 5 and the quality factor Approximately 25. The bandpass amplifier 1238595 in the present invention can consistently achieve a quality factor that is higher than ο and a fairly high quality factor. Such an amplifier is advantageous for use in a receiver and a ^ number system. It is used in the receiver. In a part of a signal system, the receiver's gain enhancement capability is particularly advantageous in a small environment. Another example is US Patent No. 20030184378, filed by Segawa, entitled "Mixer with Passband Selectivity and Differential amplifier · large ασ {Mixer and differential amplifier having bandpass frequency selectivity) '' discloses a mixer and a differential amplifier formed using a simple circuit structure, so such a cut-off frequency can be easily changed. Each mixer and differential amplifier each contain an N-type metal-oxide-semiconductor transistor, of which the _L (> signal and _L〇 + signal are input from the local oscillator to the N-type metal-oxide semiconductor transistor, respectively. Crystal and two parallel resonant circuits, one of which is an output load and it contains an active inductor, capacitor and resistor. However, in the prior art, no single-chip bandpass amplifier was designed in the microwave to millimeter wave Between the frequency bands of _. Complicated by the above problems, there is a need to provide a new amplifier or filter structure that can overcome the shortcomings of the prior art. [Summary of the invention] The object of the present invention is to provide a bandpass amplifier, which is fabricated on a single chip It can be used in the micro I · wave to millimeter wave band. Another object of the present invention is to provide a filter circuit with positive gain, which is fabricated on a single chip and can be used in the microwave to millimeter wave band. Another object of the present invention In providing a radio frequency receiving repair machine that does not require the use of a passive band-pass filter, the chip size and manufacturing cost can be reduced. To achieve the above and its Purpose 'The present invention proposes a three terminals amplifier with a Gongtong characteristic. The amplifier includes an input matching unit; a first biasing unit electrically connected to the input matching unit; a gain stage, a Is connected to the first bias unit; a first and a bias unit are electrically connected to the gain stage; and an output matching unit is electrically connected to the second bias unit. The unit is used to match the gain of the amplifier and has a first filter and wave characteristics. The first bias unit is used to drive the first end of the amplifier and has a first high-pass filter 7 1238595 Π. This field is used for To provide a flat gain of the amplifier. The second partial fort unit is used; the second end of the amplifier is driven and has a characteristic of a second high-pass chirp; and a matching unit is used to match the gain of the amplifier and has The characteristics of the wave. The matching characteristics of the amplifier according to the present invention are as follows, wherein the characteristic of the first test is f 躲 hide, the characteristic of the second wave of the domain is-the second low-ranking wave, and the input i matches Early Wu matches this output The early ones are-first-network = and-second tau networks including inductors and capacitors, which are used to match the gain of the amplifier, and have a filtering characteristic and a second filtering characteristic. According to the characteristics of the amplifier of the present invention, the first test unit and the first system are a K-type network including an inductor and a capacitor, and the fourth circuit, respectively. The two terminals have the characteristics of the first high-vocational wave and the characteristics of the first round pass. In order to achieve the above and other objectives, the present invention further provides a wave filter circuit with a gain. The filter, wave The device circuit includes a -t-type network;-a -L-type network, the ground is connected to the first T-type network;-a second L-type network; a second t-type network, connected to the first A two-type network; and a three-terminal amplifying device having a first terminal electrically connected to the first network and a second terminal electrically connected to the second L-type network H three terminals Connected to the-ground plane, which is used to provide the flat gain of the bandpass circuit. The _ τ type network includes-an inductor and a capacitor with the characteristics of a-low pass wave. The -L network includes-an inductor and a capacitor 具有 with the characteristics of a _high pass warship. The second L-shaped network includes-with a second high-pass filter characteristic, and inductor = capacitance. The second T-type network includes an inductor and a capacitor having a second low-pass filter characteristic. The three-terminal amplification device is used to provide a flat gain of the band-pass circuit. And, the gain of the -T scale and the second τ-type random A device and the -1 type network drives the first end of the amplification device and the second L-type network drives the first Both ends. To achieve the above and other objectives, the present invention further provides a receiver, which includes an antenna, a first pass-through amplifier, a mixer having the oscillator, a second band-pass amplifier, and a selective reception special signal. Detector. Wherein, the first and second band-pass amplifiers according to the present invention each include 1238595-an input matching unit it;-a-bias unit, which is electrically connected to the input matching unit;-a gain stage, which is electrically connected To the first bias unit; a second bias unit electrically connected to the gain stage; and an output matching unit electrically connected to the second bias unit. [Embodiment] Although the present invention may be embodied in different forms of embodiments, those shown in the drawings and those described below are the key points of the present invention, and please understand that those disclosed herein are based on consideration Invention-Exemplary, and «Figure ribs the present invention in the specific embodiment described in the illustration and the field. In order to understand the spirit of the present invention, a conventional single-stage amplifier is introduced first. Please refer to Figure π for its display-the structure of a traditional single-stage amplifier. The amplifier 300 mainly includes an input matching soap 7G 310;-a bias unit 32; a gain stage 33 () and an output matching unit. The input matching unit 310 and the output matching unit 34 are used to match the gain of the gain stage 33, and are realized by transmission ，, whose transmission-like design parameters are calculated by Shishi_Figure (3Lu—). The gain stage 330 and the -output matching unit 34G. The biasing unit 32 () is used in the amplifier 300 under appropriate biasing conditions, and a capacitor 322 in the biasing unit 32 is used to directly block 324 # ^^^^ & p. (ch〇cMng ^ 0 According to the present invention, the integration of the gain amplifier A || with Laibo! is because the matching network is processed with a low pass button and the bias network is processed with a high pass filter. And wave device for processing. Please refer to FIG. 1 for a structure diagram of a single-stage band-pass amplifier according to the first embodiment of the present invention. The amplifier 5 includes an input-matching unit 1 (); _ 第A bias unit, electrically connected to the ^ matching unit;-a gain stage of 3G, a miscellaneous scale is connected to the first bias unit;-a second bias unit 40, electrically connected to the gain stage; and —The output matching unit is electrically connected to the second bias unit. The input matching unit 10 is used for matching and maximizing the power of the amplifier. A biasing unit 20 is used to drive the jth (terminal) of the amplifier and has the characteristics of the -th_high-pass filtering. The gain stage 30 is used to provide the amplification level: t- I 4th _ bias unit 4G _ is used to drive the second end of the amplifier and has the characteristics of 1238595 second and second high pass button; and the output matching unit 5 () is to match and maximize the gain of the amplifier 5 and It has the characteristics of a second low-pass filter.. It should be noted that the input matching unit using a low-pass T-type structure is selected to obtain the input gain of the bandpass amplifier 5 and the most awkward and make it-the first- Low supplementary wave response. The subsequent -partial solution element 20 is Hungry Crane A || 5 to ## bias condition without changing the RF signal transmission, and its filtering and wave characteristics are-the first high-pass filtering Response. Therefore, the first low-pass carrier response of the input matching unit 1G and the first high-pass response 2% of the first bias unit% generate a second-band-pass response. The same method is applied to the The output matching unit% and the second bias unit 40, and the second low-pass wave connected to the output matching unit 50 in response to the second bias unit generates the second high-pass response—the first Two-band pass response. Note the center frequency of the first band-pass response and the center frequency of the second band-pass response. The rate must be consistent. The first low-pass response of the input matching unit 10 is not limited to the same as the second low-pass response of the output matching unit 50, and the first-high-pass response of Lin-Partial Fresh 2G is not limited to It is the same as the second high-pass response of the second biasing unit 40. Therefore, the band-pass filter of the band-pass amplifier 5 should have a plurality of transmission zeros at the edge of the pass band to cause a high attenuation rate and a wide cut-off band. The gain stage The design of 30 is to provide a flat gain over the passband range. In the gain stage 30, the circuit is appropriately optimized to provide low noise, medium to high gain, or high output power. Therefore, the bandpass The amplifier 5 can be regarded as a filter chain, which is composed of multiple filter units, such as the input matching unit 10, the first biasing unit 20, the second biasing unit 40, and the output matching unit 50. Connected. According to New York, McGraw Hill, 1980, the author is G. Matthaei ’s title is “Microwave Fiiters, Impedance-Maching Netwwks _

The image parameter filter method mentioned in "Coupling structures" can be used to determine the components of the input matching unit 10, the first bias unit 20, the second bias unit 40, and the output matching unit 50. This is because it has the advantage of simplifying a high-order filter into several primary filtering cells, so that its characteristics can be obtained by the matrix product of all the cells. Please refer to FIG. 2, which shows a first embodiment of the present invention. The equivalent circuit of the input matching unit 10 in Fig. 1. The input matching unit 10 is an input circuit including an inductor, £ ^ 2 and a capacitor 1238595 / ... value, the input of the brother-τ network. And input such as 仏, which indicates that the impedance% of the left and right parts of the recording matching unit 1Q ===, the on-off frequency of the red ringing cutoff frequency and the kiss are the angular frequency of the transmission zero point of the first low Raibo response ' It is caused by the first τ Dugang ’s light window wire a ... ”ω〇Τ = 1 ^ {Lx + L2) C2 (1) ωζΤ = 1 V ^ 2 ^ 2 ⑺ in the D-type network Where the inductance values of the inductors Li and L2 and the capacitance value of the capacitor Cl can be determined by the- Miscellaneous cut-offs and transmission zeros are determined by the-mirror impedance. The first image impedance of the -T network matches the input and output impedance of the first T network to achieve the gain of the bandpass amplifier 5. The existence of the transmission zero is particularly useful for enhancing the stop-band attenuation rate of the band-pass amplifier. Therefore, the transmission has a zero pass rate ~ you can choose #near the cut-off solution.

Choose the words of interference. The cut-off frequency and the zero-off transmission zero point can be expressed as: factor: mT In order to match the gain of the amplifier 5 to meet the input and output conditions at the same time, Z01 must be equal to the input impedance 4 and z of the input matching unit 10. 2 also needs to be equal to the output impedance zout of the input matching unit 10. Therefore, the so-called first mirror impedance can be expressed by this formula: Z, ⑷ where $ σΓ

iT

It is the DC image impedance. From equations (1) to (4), this circuit unit can be calculated by ωα ωζΓ and #, which is expressed as: 11 1238595

L 1 = mT ω〇τ (5) l2-1-mT RnT mT ωοτ ⑹ C2 = 1 = ^ r—— ⑺ ① cT ^ oT ι Referring to FIG. 3, according to the first embodiment of the present invention, the real graph is fi An equivalent circuit of the first bias voltage 0. The -biasing unit 2 () is a -L network including the electric voltage L3 and the capacitor = C4, which drives the first terminal of the amplifier and has the first high-wave characteristics. It should be noted that the impedance π of the input terminal of the first L-type network. And the impedance Z, Q2 'of the output 4 represents the equivalent impedance of the left and right portions of the first bias unit 2G. The capacitance values of the electric circuit and the capacitor Q in the first type network are called by the cut-off frequency of the first high-pass filtering characteristic of the L-type network and the frequency of the transmission zero point, and a The second image impedance is jointly determined. And ^^ can be expressed as: ω ^ ίΐ ¥ ΐ} ⑻ ω

zL (9) The second mirror impedance of the -L network matches the input and output P of the _L network and is resistant to drive the -end UO domain of the amplifier -the high-pass filter response The cut-off angular frequency and the transmission zero angular frequency are generated by series resonance on a branch of the first L-shaped network. The transmission zero domain is strengthened by the stop band attenuation rate of the band-pass filter. The cut-off frequency 〇L and the transmission zero frequency can be expressed as a factor ^: mL = ^ T-〇) 2cL / co2zL (1〇) In order to match the gain of the amplified state 5, Z'0l must be equal to the first The input impedance z, out az, 02 of the bias unit 20 must be equal to the output impedance z, 至 of the -bias unit 20. Therefore, the so-called second mirror impedance center can be expressed as: 12 1238595 7j in out = ^ iL-and '1 ο V ω: τ where = is the mirror impedance of DC. From the equations (8) to (li) 'The circuit unit can be calculated by ®cL, CozL and ruler, and it is expressed as: Q: 1 1 mL COcL ^ oL (12) Q: mL 1 _ l-m2L 〇 ) cLRoi (13)-1 R〇l: ----- mL co〇l (14) • This gain stage 30 is designed to provide a flat gain in the desired passband range. The gain transistor type can be realized by the following types: BJT, Heterojunction Bipolar Transistor (HBT) 'Local Electron Mobility Transistor (HEMT), pseudo high electron mobility Transistors (PHEMT), complementary metal oxide semiconductor field-effect transistors (CM0S), and side diffused metal oxide semiconductor field-effect transistors (LDMOS). Among them, the pseudo-type high electron mobility transistor system is applicable to the gain stage 30 in the microwave to centimeter wave range. The semiconductor substrate materials used for the bandpass amplifier 5 include: silicon, silicon on insulation (soi), silicon germanium compound (SiGe), gallium arsenide (GaAs), indium phosphide (InP), and silicon germanium-carbon compounds . The gain stage 30 is preferably designed by making a resistive parallel feedback pseudo high electron mobility transistor on an Ai4n_GaAs compound substrate. The gain stage 30 may be composed of one or more transistors, and is mainly determined by the required gain value. In this preferred embodiment, the first end of the band-pass amplifier 5 driven by the first bias unit 20 is a gate and the second bias unit 40 drives the first end of the band-pass amplifier n5. The three-terminal system is recorded. The above is not limited to * but is determined by the design requirements of the amplifier. Please refer to Figure-. The band-pass amplifier 5 has a resistive parallel feedback network, where the capacitor 32 is used for the direct separation from the drain to the gate, and the combination of the capacitor 32 and the electric resistor provides an indication. Feedback phase. The band-pass amplifier 5 will actually include multiple feedback paths. One of them is via electricity 13 1238595

External feedback path of capacitor 32, inductor 34 and resistor 36. The different right

In the echo position, the band-pass amplifier $ with multi-feedback path control has source and load impedances of s and ^, respectively, and its scattering parameters can be inferred from the small signal model and the heart parameter% ^ ^ 02L [(1 +,) (1 + ^ 22)-S] 2S2 {] (l ^ Sn) (^ S22) + Sl2S2l (11) The equivalent circuit of the output matching unit 50 is similar to the second figure. The input matching unit The equalizing circuit of 10. The output matching unit 50 is a second D-type network including an inductor and a capacitor, which can achieve a gain corresponding to the maximum tilt A || 5 and has the second lowest Chengbo responded. In the T-type network towel, the inductance value of the capacitor and the capacitance value of the capacitor can be determined by the cutoff of the second low-pass wave characteristic and the solution of the transmission zero point, and the one-three-mirror impedance. The third mirror impedance of the second T-type j path matches the input and output impedances of the second T-type network to achieve the gain of the Gongtong amplifier 5. It is worth noting that the input matching unit 10 and the output matching unit 50 can also be designed to have a band-pass filtering response, although more constituent elements will be added, such as more recent valleyrs and inductors. In order to achieve the response of the band-pass filtering, the input matching unit 10 and the output matching unit _ constituent elements are also a container and an inductor, and the inductance value of the relay and the capacitance m capacitance can meet the desired band navigation characteristics. The frequency of the read stop solution and the transmission zero point are determined together with the corresponding image impedance. The equivalent circuit of the second bias unit 40 is similar to the equivalent circuit of the first bias unit 20 in the second figure. The first bias unit 40 is a second L-type network including an inductor and a capacitor, which can drive the second end of the amplifier 5 and has the second high-pass filtering response. In the second [type network ', the inductance value of the inductor and the capacitance value of the capacitor can be determined by the cut-off frequency of the second high-pass filter characteristic, the frequency of the transmission zero point, and a fourth mirror impedance. The fourth mirror impedance of the second L-type network matches the input and output impedance of the second T-type network to drive the second end of the band-pass amplifier 5. Please refer to FIG. 4 first, which shows the structure of a two-stage band-pass amplifier according to the second embodiment of the present invention. The band-pass amplifier 105 includes an input matching unit 11; a first bias unit 丨 plus, electrically connected to the input matching unit 110; a gain stage 13, electrically connected to the first bias unit 120; a second biasing unit 140 electrically connected to the gain stage 130; and an output matching unit 150: electrically connected to the second biasing element 14o. The input matching unit 110, the first biasing unit 120, the second biasing unit 140, and the output matching unit 15 in the first solo are similar to the input matching unit 1G, The first biasing unit M, the second biasing unit 40 and the output matching unit 5G. The main difference between the first embodiment and the second embodiment is that the gain stage 13 has two gain stages 132 and 1%, which are high-passband gains. The bandpass amplification ㈣5 can be expressed by the product of the transmission matrix: [Thndpass amp = (12) where 咴, heart-qing, I ”, [Γ] ㈣, t, & do n’t be the input matching unit 110, the first A biasing unit 120, the gain stages ΐ32, ΐ34, the second biasing unit 140 and the output matching unit 15o transmission matrix. In a specific embodiment of the present invention, a two-stage The band-pass amplifier is designed to have a Pu pass band in the range of 20 to 40 GHz, and to suppress unintentional interference at 7 and 57 GHz. The π-pass amplifier permits a frequency range of M to 4〇GHZ. The low cut-off frequency is selected at 18GHz and the high cut-off frequency is selected at 44. The transmission zero point rate is correctly selected to fall in the 8th and 57th. The scale loses the matching unit and the output matching unit. · 64 and mi = G 92 are set. At qgHz, all input matching units, output matching units, and bias units are matched by 5⑽. Therefore, according to equations (4) and (11), Fan Cheng has 3 edges. And ^ 62 5Ω. Then according to the equations ⑺ to ⑺, with m Corps. The input matching unit u〇_ of 64 can estimate the total component value of 〇16 沾, Α 〇23 nH, and q—0.033 pf. Similarly, according to equations (13) to (15), the first bias unit ^ component value There are C3-0.153 pF, C4 = 0.86 pF, and i4 = () 6G nH. Two pseudo-type high-electron scale-shifting transistor crystals (EMT) provided in series with impedance feedback as a gain stage can provide sufficient gain. In this unknown -In a specific embodiment, a two-stage band-pass amplifier according to the present invention is manufactured by 15 1238595 5. Now refer to FIG. 5, which shows the power gain of a two-stage band-pass amplifier using an ideal lumped element. (Sn) and insertion loss characteristics (Su and S22), where the angular frequency is equal to 2 7Γ times the frequency, that is, ω == 2ττ /. The transmission zero of the forbidden band appears at 7 and 57GHz as required. Its passband gain is between 20 to 40 GHz is 15.4 dB and has a gain ripple of 1.4 dB. In order to implement a monolithic microwave integrated circuit, the lumped inductor is usually implemented with a short-strip microstrip line with high impedance, and its electronic length θ = = 2 tan · 1 (ωZZ / 〇, and the lumped capacitor is usually replaced by a radial open pile At the electron length of the Θ series microstrip line, Zh is the impedance value of the high-impedance microstrip line. However, lumped inductors can also be implemented in other lumped forms, such as spiral inductors, and lumped capacitors can also It can be realized in other lumped forms, such as plug-in capacitors or metal-insulated-metal insulated capacitors (MM). In addition, layout parasitics such as microstrip line τ-type junctions, transitions, and through-hole connections are also considered. The overall circuit is optimized to achieve the designed passband gain and forbidden band attenuation. Thereby, a two-stage band-pass amplifier system according to the invention is manufactured. The semiconductor substrate used in the manufacture is an AlGaAs / InGaAs / GaAs compound. Pseudo-type high electron mobility transistor device (ρΗΕΜΤ) is used as a booster level, where at 2V; and under extreme bias, the device has a unit current gain of more than 100GHz_ 止 词 ⑹, and Exceeds the maximum vibration characteristics of 25GGHz_). The chip size of the band-pass amplifier after implementation is 3xl mm2. Please refer to FIG. 6, FIG. 7 and FIG. 8, which respectively show the power gain (insertion loss) and input return loss of the two-stage band-pass amplifier according to the second embodiment of the present invention. (input return l0ss) and output return loss (〇utpm retum i〇ss) simulation and actual measurement. The simulation results show that it has good bandpass characteristics from 20 to 40 GHz. Its passband gain is 13.9 ± 0.7dB and its return loss is greater than the secret. The simulated deadband attenuation is 4 dBc below the test and 64-dBc at k 57 to 75 GHz. The actual measurement results show that the passband gain is 14 fine dB from 20 to 400. Zeta, and the weaving system is slightly smaller than the analog value ... the 2 input zero points on the low frequency side. Chudeluo matches the difficult value at 7GHz. . The summer measurements of the two transmission zeros on the high side are at 62 and 75 GHz, respectively, which are slightly inconsistent with the analog values. Although not inconsistent, from 2 to 9 GHz and from 57 to 75 GHz, these transmission zeros effectively give attenuation to the 5 sides of the forbidden band, which is very much the same as that of the simulation. Real __ Jane Lost Society has no pseudo-values with a phase of 16 1238595 dB. This is the contact and contact of the probe tip during wafer fabrication. Please refer to FIG. 9, which shows the simulation and real surface of the double 7 noise index (nGise% ure) according to the second embodiment of the present invention. The actual measured noise " to, HoGHz is in the range of 2.7 to 3. Her, slightly higher than the analog value. Therefore, the band-pass amplification according to the present invention can be discussed, and has a low reduction, which is very suitable for the application of low noise amplification. In the past, RF passive filters were composed of a combination of capacitors, inductors, and resistors, and have been implemented by means of transmission lines. The radio wave filter only causes loss and its gain is less than dB. In order to obtain a positive gain, the RF domain waver will generally cooperate with the microwave active integrated circuit to obtain the gain response and the minimum cost. For the band-pass amplifier circuit component of the present invention, it should be noted that the first embodiment of the present invention can also be used as one: single == active filter with positive gain response. Please refer to the first cap, which is a receiver that does not require a passive band pass button. The receiver 200 includes-an antenna 21G,-a band-pass amplifier n,-a mixer 230 having the seismic coil dove 230, a first f-pass amplifier 250, and a detection device for determining whether a specific signal is received. 260 received, wherein the first band-pass amplifier 220 and the second band-pass amplifier 25 are band-pass amplifiers according to the embodiment of the present invention. The signal is received by the antenna 210 and passes through the first band-pass amplifier 220. The filtered and amplified signal enters the mixer 23 and is mixed with one of the local oscillator signals generated by the local seismic container 24 to obtain an upper passband signal and a lower passband signal. The upper passband signal is then filtered and amplified by the second bandpass amplifier 250. The output of the second band-pass amplifier 25 is received by the detection device 260 and detects that it has entered a subsequent signal processing element. According to a preferred embodiment of the present invention, the advantages of the band-pass amplifier are that it can be fabricated on a single chip and can be used in the frequency band from Zhengzheng to Zhaimi. Therefore, the present invention can effectively reduce the chip size and production cost. Another advantage of the amplifier is that the filter response of the band-pass amplifier can be accurately predicted. This is because the inductance value of the inductor and the capacitance value of the capacitor are expressed in a closed form (closedfrm). 17 1238595 Another advantage of the band-pass amplifier is that the frequency of the transmission zero of the band-pass amplifier can fall at the desired position to enhance the stop-band attenuation of the band-pass amplifier. Another advantage of this τ-pass amplifier is to provide a filter circuit with positive gain, which is fabricated on a single chip and can be used in the microwave to millimeter wave band. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. As explained above, the relative position and distance of the metal pieces of each layer, the control of the coupling amount of the coupled valley, and the position control of the transmission zero point can be modified and changed in various types without destroying the spirit of the invention . Therefore, the scope of protection of the present invention shall be determined by the scope of the attached patent application. [Brief description of the drawings] In order to make the above and other objects, features, and advantages of the present invention more apparent, the following describes the preferred embodiments of the present invention in detail with the accompanying drawings as follows. FIG. 1 shows a structure diagram of a single-stage band-pass amplifier according to the first embodiment of the present invention; FIG. 2 shows an equivalent circuit diagram of the input matching unit according to the first diagram of the first embodiment of the present invention; FIG. 3 The first diagram according to the first embodiment of the present invention shows the equivalent circuit diagram of the first bias unit; FIG. 4 shows the structure diagram of the dual-stage band-pass amplifier according to the second embodiment of the present invention; π Power gain and insertion loss characteristics of a two-stage band-pass amplifier using an ideal lumped element; Figure 6 shows a schematic and measured diagram of the power gain of a two-stage band-pass amplifier according to a second embodiment of the present invention; The figure shows simulation and actual measurement diagrams of input return loss of a two-stage band-pass amplifier according to the second embodiment of the present invention; and FIG. 8 shows a two-stage band-pass amplifier according to the second embodiment of the present invention. 18 1238595 simulation and actual measurement chart of output return loss; Fig. 9 shows the simulation and actual measurement chart of the noise index of the two-stage bandpass amplifier according to the second embodiment of the present invention; A receiver And Figure 11 shows the structure of a traditional single-stage amplifier. Explanation of drawing number: 5 amplifier 10 input matching unit 20 first bias unit 30 gain stage 32 capacitor 34 inductor 36 resistor 40 second bias unit 50 output matching unit 105 Amplifier 110 input matching unit 120 first biasing unit 130 gain stage 132 gain stage 134 gain stage 140 second biasing unit 150 output matching unit 200 receiver 210 antenna 220 first bandpass amplifier 230 mixer 240 local oscillator 250 Second bandpass amplifier 260 detection device 300 amplifier 310 input matching unit 320 bias unit 322 capacitor 324 inductor 330 gain stage 340 output matching unit 19

Claims (1)

1238595 Scope of patent application: 1. A three-terminal amplifier with a band-pass characteristic, which includes: = input matching unit 'made in Pg to gain A | § gain and has U-wave specialization-the first-bias Unit, electrically connected to the money input matching unit, which is driven at the first end of the amplifier and has a characteristic of a first high-pass filter; a gain stage button is connected to the first bump unit, which is County amplifier flat gain;-a second bias unit, electrically connected to the gain stage, which is made at the second end of the driver amplifier and has a second high-pass filtering characteristic; and an output matching unit, electrically grounded Connected to the second bias unit, which is used to match the gain of the amplifier and has a second filtering characteristic. 2. The three-terminal amplifier of item 1 of the patent application scope, wherein the input matching unit is a first τ-type network including an inductor and a capacitor, which is used to match the gain of the amplifier and has the first Filtering characteristics. 3. The three-terminal amplifier according to item 2 of the patent application scope, wherein the characteristic of the first filtering is a characteristic of a first low-pass filtering, and in the first T-shaped network, the inductance value of the inductor and The capacitance of the electrical device is determined by the cut-off frequency of the first low-pass filter characteristic, the frequency of the transmission zero point, and a first image impedance. 4. The three-terminal amplifier according to item 3 of the patent application scope, wherein the first image impedance of the first τ network is matched to the input and output impedance of the first T network to match the gain of the amplifier. 1238595 5 · 'As in the three-terminal amplifier of the scope of the patent application, wherein the first biasing unit is a K-type network including a sensor and a capacitor, which is used to drive the first end of the amplifier Ail and presents the The characteristics of the first high-pass filtering. /, 6. Such as. The patent claims the three-terminal amplifier in the fifth item, wherein in the first l-type network, the value of the inductance and the capacitance of the capacitor are determined by the cut-off frequency and transmission zero of the first high-pass filter characteristic. The frequency is determined by the second mirror impedance of the -L network. 7. The three-terminal amplifier according to item 6 of the patent application scope, wherein the second mirror impedance of the first L-type network is matched to the input and input impedance of the -L-type network to drive the amplifier. The first end 0 8. If a patent is requested, the third end of the range item 丨 is amplified n. The output matching unit is a second T-type network including an inductor and a capacitor, which is used to match the gain of the amplifier. And has the characteristics of the second filtering. 'Λ 9 · If you shoot specifically, please enlarge n at the three ends of the 8th item, where the characteristic of the second system is a characteristic of a second low-pass filter, and in the second T-type network, the inductor The inductor's inductance and the capacitor's valley are determined by the cut-off frequency of the second low-pass filter characteristic, the frequency of the transmission zero, and a third mirror impedance. 10. If the patent claims the scope of the 9-terminal two-terminal amplifier 'where the third mirror I1 of the second D-type network and the impedance is matched to the input and output impedance of the first T-type network to match the amplifier's Gain. 21 2138595 11. The three-terminal amplifier according to item 1 of the patent application scope, wherein the second bias unit is a second L-shaped network including an inductor and a capacitor, which is used to drive a second L-type network of the amplifier. And has the characteristics of the second high-pass filtering. 12. The three-terminal amplifier according to item 11 of the patent application scope, wherein in the second L-type network, the inductance value of the inductor and the capacitance value of the capacitor are determined by the cut-off frequency of the second high-pass filter characteristic and The frequency of the transmission zero is determined by a fourth image impedance. 13. The three-terminal amplifier according to item 12 of the patent application, wherein the fourth image impedance of the second L-type network is matched to the input and output impedance of the second L-type network to drive the second end of the amplifier. 14. The three-terminal amplifier according to item 1 of the patent application range, wherein the gain stage is a pseudo-type high-speed electronic mobile transistor. 15.—A filter circuit having a gain, including a first T-shaped network including an inductor and a capacitor having a first filter characteristic; a first L-shaped network electrically connected to The first D-type network includes an inductor and a capacitor having the characteristics of a first high-pass filter; a second 1 ^ circuit includes an electric capacitor and a capacitor having a second characteristic of a high-pass filter; a second T Type network 'is connected to the second [type network, including-an inductor and a capacitor having a second button characteristic; and a three-terminal amplification device having a first terminal electrically connected to the first L-type Network, a second end is electrically connected to the second L-shaped network, and a third end is connected to the ground plane, which is used to provide the flat gain of the band-pass circuit; 22 1238595 where the first The T-type network and the second T-type match the gain of the amplification device; and the first L-type network drives a first end of the amplification device and the second L-type network drives a second end of the amplification device. μ 16. The filter circuit with a gain according to item 15 of the patent application range, wherein the characteristic of the first filtering is a characteristic of a first low-pass filtering, and in the first τ-type network, the inductor The inductor value of the capacitor and the capacitor value are determined by the cut-off frequency of the first low-pass filter characteristic, the frequency of the transmission zero point, and a first image impedance. 17. The filter circuit with a gain according to item 15 of the scope of patent application, wherein in the first network, the inductance value of the inductor and the capacitance value of the capacitor are determined by the first high-pass wave characteristic. The cut-off frequency and the frequency of the transmission zero are determined by a second image impedance. 18. The filter circuit having a gain as described in item 15 of the scope of patent application, wherein the characteristic of the second chirp is a characteristic of a second low-pass filter and wave, and in the second T-type network, The inductance value of the inductor and the capacitance value of the capacitor are determined by the cut-off frequency of the second low-pass filter characteristic, the frequency of the transmission zero point, and a third mirror impedance. 19. The filter circuit with a gain according to item 15 of the scope of patent application, wherein in the second type B network, the inductance value of the inductor and the capacitance value of the capacitor are determined by the second high-pass 遽 baud The cut-off frequency and the frequency of the transmission zero are determined by a fourth image impedance. 20. A filter circuit having a gain as claimed in item 15 of the patent application, wherein the three-terminal amplification device is a pseudo-type high-speed electronic mobile transistor. 23 1238595 types of receiver 'which includes-antenna'-first-bandpass amplifier,-this frequency band with its own geophone '-second bandpass amplifier, and __ choose a receiver to receive special signals, where The first and second band-pass amplifiers each include: = an input and output unit, and the enhancement amplifier M of All has the wave characteristic; a first-bias unit, which is electrically connected to the worker matching unit, which is driven by The first end of the amplifier has the characteristics of a first high-pass filter;-a gain stage, which is roughly connected to the __ unit, which is based on the gain of the tilt amplifier; The gain stage is thinner than the second end of the amplifier and has a characteristic of a second high-pass filtering; and a bet-output matching unit electrically connected to the second bias unit, which The cup has a second filtering characteristic. Please consider the receiver of item 21, wherein the input matching unit is a first τ-type network including an electric in valley, which is used to match the gain of the amplifier and has the characteristics of the two waves, and wherein the output The matching unit is a 51st network including one of an inductor and a capacitor, which is used to match the gain domain of the amplifier with the characteristics of the second filter and wave. 23 = Special / Γ receiver in item 21, in which the characteristic of the first button is a first low-pass button, and the contact of the second filter is a characteristic of a tilt boat. The receiver of the 23rd item, wherein in the first τ-type network, the rigid capacitor value box turns-low «cut-off frequency of linity = frequency of transmission zero, and-determined by the first image impedance, and In the second T-type network, the inductance value of the 24 1238595 inductor and the capacitance value of the capacitor are determined by the cut-off frequency of the second low-pass filter characteristic, the frequency of the transmission zero point, and a third mirror impedance. 25. The receiver of claim 24, wherein the first image impedance of the first τ network is matched to the input and output impedance of the first T network to match the gain of the amplifier, and the The third mirror impedance of the second T-network is matched to the input and output impedance of the second τ-network to match the gain of the amplifier. 26. The receiver according to item 21 of the patent application, wherein the first bias unit is a first L-shaped network including an inductor and a capacitor, and is used for driving the first end of the amplifier and having the first A high-pass filtering characteristic, and the second bias unit is a second L-shaped network including an inductor and a capacitor, which is used to drive the second end of the amplifier and has the second high-pass filter characteristic. 27. The receiver according to item 26 of the patent application scope, wherein in the first l-type network, the inductance value of the electric appliance and the capacitance value of the capacitor | § are determined by the cut-off frequency of the first high-pass filtering characteristic And the frequency of the transmission zero, which is determined by a third image impedance, and in the second type B network, the inductance value of the inductor and the capacitance value of the capacitor are cut off by the second high-pass filtering characteristic = rate And the frequency of the transmission zero is determined by a fourth image impedance. 28. The receiver according to item 27 of the patent application scope, wherein the first mirror impedance of the first l-type network matches the input and output impedance of the first l-type network to drive the first end of the amplifier, The fourth mirror impedance of the second L-type network is matched to the round-in and output impedance of the second L-type network to drive the second end of the amplifier. 25 1238595 29. The receiver according to item 21 of the patent application, wherein the gain stage is a pseudo-type high-speed electronic mobile transistor. 26