TWI238544B - Luminescence device with micro reflection structure - Google Patents

Abstract

A luminescence device with micro reflection structure is provided. The device has a micro reflection structure layer. The light emitted from the luminescence layer is reflected and guided from the micro reflection structure to increase the luminescence efficiency of the luminescence device.

Description

1238544

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting element, and more particularly to a light-emitting element having a structure layer. The application of the light-emitting element is quite wide, for example, it can be applied to optical display devices, laser diodes, traffic signs, data storage devices, ventilation, lighting devices, and medical devices. In this technique, current technology; one of the most important topics for the staff is how to improve the luminous efficiency of the light-emitting element. The prior art disclosed in U.S. Patent Publication No. 20002/00 1 7652 discloses an A1 GalnP light-emitting element with a buried micro-reflective structure. As shown in FIG. 1, it uses an etching technique to etch an epitaxial layer of a light-emitting element. A micro-reflective structure is formed. The micro-reflective structure includes a semi-spherical shape, a pyramidal shape, or a pyramidal shape, and then a metal reflective layer is deposited on the epitaxial layer. ) Are bonded together, and then the original opaque substrate of the epitaxial layer is removed, so that light directed at the opaque substrate can be emitted. The micro-reflective structure can bring out the light directed to the reflective structure through reflection to improve the brightness of the light-emitting element. Since the light-emitting element is only partially bonded to the carrier by the top end of the reflective structure, the contact area is small, the mechanical strength of this structure is not strong enough, and it is easy to cause the joint surface to peel. In addition, the epitaxial layer is etched to form the micro-reflective structure, so the epitaxial layer must be grown to a sufficient thickness, otherwise the micro-reflection formed by etching is

1238544 V. Description of the invention (2) The structure can not achieve the function of light reflection, but the thicker time is not only time-consuming but also relatively expensive. Buying the problem described in the above description, the use of pressure, and then a through together to etch the purpose. When the strength of the laminated radiator is not a problem, it is considered that if a light-emitting element has a technique such as micro reverse casting, etching or evaporation, the adhesion layer will be small. Since the present invention does not require steps such as an epitaxial layer, the present invention has the disadvantage that the carriers are locally adhered together by a transparent bonding. A surface top and a strong enough inventor are thinking about how to solve the former light-emitting element structure layer with a micro-reflective structure layer. The micro-reflective structure layer is used to form a metal micro-reflective structure layer. The reflective structure layer and a light-emitting stack The thick epitaxial layer in the layer bonding technique can reduce the cost, and the adhesion layer that enhances the brightness will use the micro-reflective structure layer and light emission instead of relying on the combination of the conventional techniques, so it can solve the structure. Summary of mechanical invention The main object of the present invention is to provide a light-emitting component with a micro-reflective structure layer. ^ The light-emitting 7C component has a micro-reflective structure layer. The method of forming the micro-reflective structure layer is, for example, by using a die casting technology, The pattern master mold casts a metal reflective laminate to form a micro-reflective structure layer, wherein the micro-reflective, ... structure layer ^ includes a geometric pattern such as a semi-spherical shape, a pyramidal shape, or a pyramidal shape, and then a transparent adhesive layer is used to The micro-reflective structure layer is adhered to a light-emitting stack; no epitaxial process is required for the time-consuming process, only a page 61238544 is required.

Therefore, the metal layer can be rust-pressed to form the specific geometric pattern to reduce the cost and improve the brightness. >, :: Ming: Another purpose is to provide a light-emitting cow with a micro-reflective structure layer, which uses the transparent adhesive layer to tightly bond with each side of the light-emitting stack to make the micro-reflective structure layer, transparent and adhesive. The connection between the bonding layer and the light-emitting stack: the strength is increased, so that the mechanical strength can be improved, the peeling of the bonding surface can be avoided, the manufacturing process can be simplified, and the reliability can be increased. According to a preferred embodiment of the present invention, a light-emitting element having a micro-reflective structure layer includes a substrate, a micro-reflective structure layer formed on the substrate, a first reaction layer formed on the micro-reflective structure layer, and A transparent adhesion layer on the first reaction layer, a second reaction layer formed on the transparent adhesion layer, and a transparent conductive layer formed on the second reaction layer, wherein the upper surface of the transparent conductive layer includes A first surface region and a second surface region, a first contact layer formed on the first surface region, a first tie layer formed on the first contact layer, and formed on the first tie layer A light emitting layer, a second tie layer formed on the light emitting layer, a second contact layer formed on the second tie layer, a first wiring electrode formed on the second surface area, and forming A first wiring electrode on the second contact layer. The aforementioned substrate is composed of GaP, GaAs, GaAsP, InGaP, AlGalnP, AlGaAs, Si, SiC, glass, BN, A1N, or Ge

Page 7 1238544 V. Description of the invention (4) At least one material in the material group; the aforementioned transparent oxide conductive layer comprises a material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide. At least one material in the material group; the aforementioned micro-reflective structure layer comprises a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ge, Ag, Ti,

At least one material from the group of materials consisting of Pb, Pd, Cu, AuBe, AuGe, Ni, Cr, PbSn, AuZn, or indium tin oxide; the aforementioned micro-reflective structure includes a shape selected from a semi-spherical shape, a pyramid shape, or a pyramid At least one of the shapes formed by geometric patterns such as shapes; the first binding layer includes at least one material selected from the group consisting of AllnP, A1N, GaN, AlGaN, InGaN, and AlInGaN; the light-emitting layer, the Contains from

At least one material from the group of materials consisting of AlGalnP, GaN, InGaN, and A1 InGaN; the second binding layer includes a material selected from AΠηP, A1N,

At least one material from the group consisting of GaN, AlGaN, InGaN, and AlInGaN; the second contact layer includes a material selected from the group consisting of SGaP, GaAs,

At least one material from the group consisting of GaAsP, InGaP, AlGalnP, AlGaAs, GaN, InGaN, and AlGaN; the first contact layer includes a member selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, AlGaAs,

At least one material from the group of materials consisting of GaN, InGaN, and AlGaN; the transparent adhesive layer includes a material selected from polyimide (ρι), benzocyclobutane (BCB), or perfluorocyclobutane (PFCB) The first reaction layer system includes at least one material selected from the group consisting of KSiNx, n, or ^; the second reaction layer system includes at least one material selected from SiNx, At least one material in the group of materials composed of Ti or Cr. 1238544 V. Description of the invention (6) The bonding force between layers or transparent conductive layers. Please refer to FIG. 3, according to another preferred embodiment of the present invention, a light-emitting element 2 having a micro-reflective structure layer includes a substrate 20 and a micro-reflective structure layer 21 formed on the substrate 20. The micro-reflective structure layer The formation method is similar to that of the micro-reflection structure layer 11, a first reaction layer 200 formed on the micro-reflection structure layer 21, a transparent adhesive layer 201 formed on the first reaction layer 200, and A second reaction layer 202 on the transparent adhesive layer 201, a transparent carrier 203 formed on the second reaction layer 202, and a transparent conductive layer 22 formed on the transparent carrier 203. The upper surface of the transparent conductive layer 22 includes a first surface region and a second surface region, a first contact layer 23 formed on the first surface region, and a first contact layer 23 formed on the first contact layer 23. A tie layer 24, a light emitting layer 25 formed on the first tie layer 24, a second tie layer formed on the light emitting layer 25, a second contact layer 27 formed on the second tie layer, One of the first wiring electrodes 28, And formed on the contact layer of the second ^ - a second wiring electrode 29. The purpose of the aforementioned m layer and the second layer is to assist the bonding force between the transparent adhesive layer and the reflective layer or the second carrier. Please refer to FIG. 4, according to the present invention, the light-emitting element of the Βα α Α structure layer 3 = a preferred embodiment, a microreflective substrate with an upper surface containing; a conductive substrate 30, a method for forming the conductive substrate, and a microreflection Heart = radiation structure layer 31 'The micro-reflective structure layer pair ... The formation method of structure layer 11 is similar to that of

1238544 --------- V. Description of the invention (7) " One of the first reaction layer 300 on the micro-reflective structure layer 31 and one of transparent conductive adhesive formed on the first anti-layer 300 A layer 301, a second reaction layer 302 formed on the transparent conductive adhesive layer 301, a transparent conductive layer 32 formed on the second reaction layer 302, and one of the transparent conductive layer 32 formed The first contact layer 3 /, the -first-binding layer 34 formed on the first-contact layer 33, a light-emitting layer 35 formed on the first binding layer 34 of the furnace, and the first binding formed on the light-emitting layer 3_5 Layer 36, a second contact layer 37 formed on the second tie layer 36, a first wiring electrode 38 formed on the lower surface of the conductive substrate, and a second contact layer 37 formed on the second contact layer 37 The wiring electrode is 39 °, the transparent conductive adhesive layer has the function of conducting electricity; the purpose of the first reaction layer and the first reaction layer is to assist the transparent conductive adhesive layer between the micro-reflective structure layer or the transparent conductive layer. The bonding force, while making its interface ohmic contact. In the aforementioned two embodiments, a transparent conductive layer may also be formed between the second wiring electrode and the second contact layer; in the aforementioned three embodiments, the method of forming the master mold may also be a metal substrate through a laser After processing, geometric patterns such as hemispherical spheres, pyramids, or pyramids, or combinations thereof, are formed. In addition, other methods for forming the master mold in casting technology can also be used to create the master mold of the micro-reflective structure. The method for forming the reflective structure layer may be formed by a method other than a squeezing method, or a method such as engraving or engraving. The aforementioned substrate includes a material selected from the group consisting of MGaP, GaAs, GaAsp, InGap,

AlGalnP, AlGaAs, Si, SiC, glass, BN mwe

Page 11 1238544 V. Description of the invention (8) i # m,, Si, GaAs ^ in the material group; the aforementioned conductive substrate includes

Si, GaAs, S AlGaAs, BN or AIN It can be replaced by SiC, Al203 or glass micro-reflection structure layer Ti, Pb, Pd, Ge, GaP, GaAsP, InGap, A1GaInP, Jin & constituting material group At least one of the materials or the month thereof, the transparent carrier described in J, includes at least one material selected from the group consisting of KGap and listening constituent materials; the former system includes selected from Sn, Al, Au, Pt, Zn, Ag,. ^ Cu, AuBe, AuGe, Ni, PbSn, AuZn, or at least one of the materials in the group of materials or other alternatives: 枓; the aforementioned micro-reflective structure includes a semi-spherical, pyramidal, or cone-shaped at least one of the shapes formed by y; the aforementioned second transparent conductive layer includes at least one material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide; The first tie layer includes at least one material selected from the group consisting of A1InP, A1N, GaN, A1GaN, InGaN & A11 nGaN; and the light-emitting layer includes a material selected from AlGalnP, GaN, InGaN, and AlInGaN. At least in the group A material; the second binding layer includes at least one material selected from the group consisting of A1 InP, AIN, GaN, AlGaN, InGaN, and A1 InGaN; the second contact layer includes a material selected from

At least one material from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, AlGaAs, GaN, InGaN, and AlGaN; the first contact layer includes a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, At least one material from the group of materials consisting of AlGaAs, GaN, InGaN, and AlGaN; the transparent bonding layer includes a material selected from polyimide (PI), benzocyclobutane (BCB), or perfluorocyclobutane ( (PFCB)

Page 12 1238544 V. Description of the invention (9)-~-At least one material in the group; the first reaction layer includes at least one material selected from the group of materials composed of Si Nx, Ti or Cr; The two reaction layers include at least one material selected from the group consisting of Si Nx, Ti, or Cr; the aforementioned transparent conductive adhesive layer includes a material selected from the group consisting of intrinsically conducting polymers or ^ At least one material in the group of materials composed of a medium-doped conductive material ^ The electrical material of the second description includes a material selected from the group consisting of indium tin oxide, cadmium tin oxide, tin oxide, zinc oxide, zinc tin oxide, Au & Ni / At least one material of the material group composed of Au. Although the light-emitting element of the invention has been disclosed in the preferred embodiment, the scope of the present invention is not limited to the above-mentioned preferred embodiment. For example, the method of the micro-reflective structure layer can be etched or etched in addition to the die-casting method disclosed in the present invention. : Carved Jun, Thai plating and other methods to form this micro-reflective structure; therefore, the following application scope should prevail. Therefore, anyone who is familiar with this technology can make any changes without departing from the scope and spirit of the patent application for the invention.

Page 13 128544 Brief description of the diagrams Brief description of the diagrams: Fig. 1 is a schematic diagram showing a buried micro-reflector A 1G a I η P light-emitting element of a known technique; Fig. 2 is a schematic diagram showing a light emitting element according to the present invention. A light-emitting element with a micro-reflective structure layer according to a preferred embodiment; FIG. 3 is a schematic view showing a light-emitting element with a micro-reflective structure layer according to another preferred embodiment of the present invention; FIG. 4 is a schematic view showing A light emitting device having a micro-reflective structure layer is another preferred embodiment of the present invention.

Explanation of symbols I Light-emitting element 10 Substrate II Micro-reflection structure layer 100 First reaction layer 101 Transparent adhesive layer 102 Second reaction layer 12 Transparent conductive layer 13 First contact layer

14 First binding layer 15 Light emitting layer 16 Second binding layer 17 Second contact layer 18 First wiring electrode

Page 141238544 Simple illustration 19 Second wiring electrode 2 Light-emitting element 20 Substrate 21 Micro-reflective structure layer 200 First reaction layer 201 Transparent adhesive layer 202 Second reaction layer 203 Transparent carrier 22 Transparent conductive layer 23 First contact layer 24 First binding layer 25 Light-emitting layer 26 Second binding layer 27 Second contact layer 28 First wiring electrode 29 Second wiring electrode 3 Light-emitting element 30 Conductive substrate 31 Micro-reflective structure layer 300 First reaction layer 301 Transparent conductive adhesive layer 302 First Two reaction layers 32 transparent conductive layer 33 first contact layer

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1238544 Brief description of the drawings 34 First binding layer 3 5 Light emitting layer 36 Second binding layer 37 Second contact layer 38 First wiring electrode 39 Second wiring electrode ΙΙΙΗΙ page 16

Claims (1)

1238544 6. Scope of patent application 1. A light-emitting element with a micro-reflective structure layer, including: a substrate; a micro-reflective structure layer formed on the substrate, the micro-reflective structure having a geometric pattern outside; a transparent adhesive An adhesive layer is formed on the micro-reflective structure layer; and a light-emitting stack is formed on the transparent adhesive layer, wherein the micro-reflective structure layer and the transparent adhesive layer are tightly bonded to increase Mechanical strength of the structure. 2. A light-emitting device having a micro-reflective structure layer as described in item 1 of the scope of patent application, wherein a first reaction layer is further included between the reflective layer and the transparent adhesive layer. 3. A light-emitting device having a micro-reflective structure layer as described in item 1 of the scope of patent application, wherein a second reaction layer is further included between the transparent adhesive layer and the light-emitting stack. 4. A light-emitting element having a micro-reflective structure layer as described in item 1 of the scope of patent application, wherein a first electrode and a second electrode are formed on the same front side of the light-emitting stack. 5. A light-emitting element having a micro-reflective structure layer as described in item 1 of the scope of the patent application, wherein a first electrode and a second electrode are formed on the front surface of the light-emitting stack and the back surface of the substrate, respectively. Page 17 1238544 6. Application patent scope 6-A light-emitting element with a micro-reflective structure layer, comprising: a substrate; a micro-reflective structure layer formed on the substrate, the micro-reflective structure having a geometric pattern; A first reaction layer formed on the micro-reflective structure layer; a transparent adhesion layer formed on the first reaction layer; a second reaction layer formed on the transparent adhesion layer; formed on the second reaction layer An upper transparent conductive layer, wherein the upper surface of the transparent conductive layer includes a first surface region and a second surface region; a first contact layer formed on the first surface region; formed on the first contact A first tie layer on the layer; a light emitting layer formed on the first tie layer; a second tie layer formed on the light emitting layer; a second contact layer formed on the second tie layer; A first wiring electrode formed on the second surface region; and a second wiring electrode formed on the second contact layer, wherein the micro-reflection structure layer, the first reaction layer and the transparent Engagement, to increase the mechanical strength of the structure. # θ m # 7 · —a light-emitting element having a micro-reflective structure layer, εί > 3 / substrate, the micro-reflective structure having a geometrical pattern of a micro-reflective structure layer formed on the substrate; Page 18 1238544 6. The scope of the patent application is a first reaction layer formed on the micro-reflective structure layer; a transparent adhesive layer formed on the first reaction layer; a second reaction formed on the transparent adhesive layer A transparent carrier formed on the second reaction layer; a transparent conductive layer formed on the transparent carrier, wherein the upper surface of the transparent conductive layer includes a first surface area and a second surface area A first contact layer formed on the first surface region; a first tie layer formed on the first contact layer; a light emitting layer formed on the first tie layer; formed on the light emitting layer A second tie layer; Φ a second contact layer formed on the second tie layer; a first wiring electrode formed on the second surface area; and a first contact electrode formed on the second contact layer A two-wire electrode, in which the micro-reflective structure layer, the first reaction layer, and the transparent adhesive layer are tightly bonded to increase the mechanical strength of the structure. 8. A light-emitting element having a micro-reflective structure layer, comprising: a conductive substrate; a micro-reflective structure layer formed on the conductive substrate, the micro-reflective structure φ having an outer shape of a geometric pattern; formed on the micro-reflective structure A first reaction layer on the layer; a transparent conductive adhesive layer formed on the first reaction layer; a second reaction layer formed on the transparent conductive adhesive layer; Page 19 1238544 The scope of the patent application is a transparent conductive sound formed on the first reaction layer. A first contact formed on the transparent conductive layer ^; a first binding ^ formed on the first contact layer; A light emitting sound formed on the first binding layer · A second binding sound formed on the light emitting layer ^ A second contact sound forming on the first binding layer ^ A second contact sound forming on the lower surface of the conductive substrate One Chu Er 'formed on the second contact layer is a first-connected: f-line electrode; and the micro-reflective structure layer, the first reaction layer, and the reflections should be combined to increase the mechanical strength of the structure. The conductive adhesive layers are in close contact with each other. As described in item 1, 6, 7, or 8 of the scope of patent application; light emitting elements with a micro-reflective structure layer, wherein the micro-reflective, G: 2 series, including at least one shape selected from the group consisting of a hemisphere, a pyramid, or a pyramid, or other alternative shapes. 1 · A light-emitting element having a micro-reflective structure layer as described in item 1, 6, or 7 of the scope of patent application, wherein the substrate comprises a member selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, At least one of the materials in the group consisting of AlGaAs, Si, SiC, glass, bn, AIN, or Ge, or other alternative materials. 11 · A light-emitting device having a micro-reflective structure layer as described in item 8 of the scope of patent application, wherein the conductive substrate comprises a material selected from the group consisting of Si, GaAs, 1238544 6. Scope of patent application At least one of the materials in the group of materials composed of SiC, GaP, GaAsP, InGaP, AlGalnP, A1GaAs, M or A1N or other alternative materials. 1 2. A light-emitting element with a micro-reflective structure layer as described in item 7 of the scope of patent application, wherein the transparent carrier comprises at least one material selected from the group consisting of sGap, sic, A1 203, or glass Or, it can replace the material. ^ 1 3. If so, please ask for the scope of the patent, μ, item 6, and item? Item or item 8: A light-emitting element having a micro-reflective structure layer, wherein the micro-reflective structure layer comprises a member selected from the group consisting of Sn, A1, Au, pt, Zn, Ag, n, pb, pd,:, At least one of the materials in the group consisting of rainbow, N1, PbSn, AuZn, or indium tin oxide, or other alternative materials. ^. Λ Shen Mozhuan, one of the items described in items 1, 6, or 7 has a light-emitting element. The transparent adhesive layer in & contains a material selected from polyimide (PI), Combining furnace a, τ ° M, ^ at least one of the materials in the group consisting of butane (BCB) or perfluorocyclobutane (PFCB) or other alternative materials. 1 5 · As described in the scope of the patent application, the second type has a micro-reflective structure layer, described in f or item 8 / including selected from simciM _ wherein the first reaction layer material or other alternative materials = all At least one material in the group of materials 1238544 6. Scope of patent application 16 · A light-emitting element having a micro-reflective structure layer as described in item 3, 6, 7, or 8 of the scope of patent application, wherein the second reaction layer At least one or more materials from the group of materials composed of Si Nx, Ti, or Cr. 17. A light-emitting device with a micro-reflective structure layer as described in item 8 of the scope of the patent application, wherein the transparent conductive adhesive layer comprises a conductive material selected from the group consisting of intrinsically conducting polymers or polymers doped with conductive materials. At least one of the materials in the group of materials or other replaceable materials. 1 8 · A light-emitting element with a micro-reflective structure layer as described in item 7 of the scope of the patent application, wherein the conductive material comprises a material selected from the group consisting of indium tin oxide, pot tin oxide, tin oxide, zinc oxide, and tin oxide. , Au & Ni / Au, or at least one of the materials in the group of materials or other alternative materials. 1 9 · A light-emitting element with a micro-reflective structure layer as described in item 6, 7, or 8 of the scope of the patent application, wherein the first binding layer comprises a material selected from the group consisting of A1 InP, AIN, GaN, At least one of the materials in the group consisting of AlGaN, InGaN, and A1 InGaN or other alternative materials. 20. A light-emitting device having a two-reflection structure layer as described in claim 6, 7, or 8 of the patent scope, wherein the light-emitting layer comprises a material selected from the group consisting of a InP GaN, InGaN, and A1 InGaN. Constitutes at least Six, patent application scope of a material or other alternative materials 2]. As described in the scope of the patent application for the sixth, seventh micro-reflective structure layer of the light-emitting element: as described in the eighth-a type from AllnP, A1N, GaN, A] Γ ^^ The second binding layer includes at least -a, nGaN and AlInGalV in the material selection group, or other alternative materials. 22. The light-emitting element with a micro-reflective structure layer according to item 6 of the scope of patent application, which is described in item 1 of the above item 8:-a type having a contact layer system in GaP, GaAs, GaAsP, In (JaP \ Af τ p Contains two materials selected from the group consisting of I and _: Substitute materials. Seed materials or other materials. For example, the 6th and the 7th micro-reflection structure layer of the patent application scope, the 8th development The second contact layer described by the member has at least one material selected from the group consisting of fa S, GaAsP, InGaP, AlGalnP, AlGaAs, or other alternative materials. The light-emitting element having a reflective structure layer as described in item 6, 7, or 8 of the scope of patent application above, can also form a transparent between the second wiring electrode and the first contact layer. The conductive layer is described in item 8, item 8 or item 24. 5 · If the scope of patent application is No. 6, No. 7 1238544 6. The scope of patent application is a light-emitting element with a micro-reflective structure layer, wherein the transparent conductive layer, Is selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, and oxygen At least one of the materials in the word group or zinc tin oxide group or other alternative materials. Page 24