TWI236489B - The polymer thermistor using the metal coated ceramic particles - Google Patents

The polymer thermistor using the metal coated ceramic particles Download PDF

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TWI236489B
TWI236489B TW90115030A TW90115030A TWI236489B TW I236489 B TWI236489 B TW I236489B TW 90115030 A TW90115030 A TW 90115030A TW 90115030 A TW90115030 A TW 90115030A TW I236489 B TWI236489 B TW I236489B
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resin
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thermistor
conductive
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TW90115030A
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Bor-Jain Lin
Gin-Hon Chen
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Bor-Jain Lin
Gin-Hon Chen
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Abstract

The general conductive fillers are metal particles and carbon black. The advantage of using the metal coated ceramic particles is that the sedimentation of conductive particles in the composite, due to the gravitational forces on the particles, can be significantly reduced. Besides, the coefficient of thermal expansion (CTE) of the ceramic particles is small. So this kind of polymer thermistor has better conductive property and PTC behavior.

Description

1236489 五、發明說明(1) 高分子導電複合材料是把導電填充材摻混於高分子基 材中’當導電填充材的含量高到某一特定值(臨界體積分 率)’導電粒子開始彼此接觸而形成了導電通路,因而具 導電性⑴。其樹脂基材有熱固型樹脂與熱塑型樹脂。常用 的熱固型樹脂有環氧樹脂(Ερ〇χγ )、聚亞醯胺樹脂 (Polyimide)、聚醯胺亞胺樹脂(p〇iyamideimide)、石夕 石同樹脂…等。常用的熱塑型樹脂為聚乙烯(p〇lyethylene ^、聚甲基丙烯酸曱酯(pmma)、聚苯乙烯(polysty r ene)… 等。導電性填充物則有金屬粉末、金屬氧化物、碳黑、碳 纖維、石墨…等。高分子導電複合材料除了可以用來當作 導電接著劑或電阻器外,當作塗料時,由於高分子導電複 合材料較不易產生電荷累積,亦可用來做抗靜電及抗電磁 波用。 材料本身會隨者溫度變化而改變電阻值 一 “ # sr於坌屬而 言’阻值會隨著溫度的上升而增加,這種電阻值隨溫度做 同向改變的現象’我們稱之為正電阻溫度係數行為 (Positive Temperature Cofficient Resistivity Behavior)。對大部分的金屬而言,所呈現的幾乎都是一 種線性的關係。相較於金屬的PTCR特性,大部分的半導體着 或絕緣體所呈現的則為負電阻溫度係數行為(NegaUve Temperature Cofficient ReSistivity Behavi〇r)_ 電阻 值隨溫度的上升而作指數式的下降。 在陶竟材料中’欽酸鎖(BaTi03)屬於典型的鈣鈦礦1236489 V. Description of the invention (1) The polymer conductive composite material is a conductive filler mixed with a polymer base material, when the content of the conductive filler reaches a certain value (critical volume fraction), the conductive particles start to each other. The conductive path is formed by contact, so it is conductive. Its resin substrate includes thermosetting resin and thermoplastic resin. Commonly used thermosetting resins are epoxy resin (Epoxγ), polyimide resin (Polyimide), polyimide resin (Polyamideimide), Shi Xishi with the resin ... and so on. Commonly used thermoplastic resins are polyethylene (polyol ^, polymethyl methacrylate (pmma), polystyrene (polysty r ene), etc .. The conductive fillers include metal powder, metal oxide, carbon Black, carbon fiber, graphite, etc. In addition to being used as conductive adhesives or resistors, polymer conductive composites can also be used as antistatic materials because they are less likely to generate charge accumulation when used as coatings. And resistance to electromagnetic waves. The material itself will change the resistance value as the temperature changes-"# sr in the metal, 'the resistance value will increase as the temperature rises, this resistance value changes in the same direction as the temperature phenomenon' We call it Positive Temperature Cofficient Resistivity Behavior. For most metals, it is almost a linear relationship. Compared to the PTCR characteristics of metals, most semiconductors are Insulators exhibit Negative Resistance Temperature Coefficient Behavior (NegaUve Temperature Cofficient ReSistivity Behavi〇r) _ Resistance value increases with temperature Exponential decline in ceramic material actually "lock Chin acid (BaTiO3) is a typical perovskite

1236489 五、發明說明(2) (Perov sk i t e )結構,其中心的鈦原子被周圍的6個氧原子 所構成的八面體結構包圍,每一個鋇原子周圍則有1 2個氧 原子相鄰;也就是說,鋇與氧原子構成了面心立方結構,_ 鈦原子則居於八面體的幾何中心位置。這樣的晶格構造使 · 得鈦酸鋇具有特殊的鐵電(Ferroelectric)行為:在一般 常溫狀悲下’欽酸鎖晶格是呈現四面立方(Tetragonal)結 構’欽原子位於偏離該晶格幾何中心點的位置,因此具有 一永久偶極矩(Permanent Dipole),此時的鈦酸鋇材料具 有強誘電(或鐵電)性。但在溫度超過居禮點之後(約為1 2 〇_ °C),四面立方晶格相變化為正立方(Cubic)結構,鈦原子 位於立方體幾何中心,極化軸(j)ip〇le Axis)不復存在, 因此鐵電性也隨之消失。簡言之,鈦酸鋇陶瓷經燒結後, 在常溫狀態下,其晶格型態具有鐵電性(Ferr〇elec讨k )’但在溫度超過居禮點(Curie Temperature)之後,晶格 相變化而使鐵電性消失,因而電阻值急驟上升⑴。摻^質3 的多晶系鈦酸鋇(p-BaTi〇3 )於其獨特的居禮溫度點電阻 值有急遽上升現象,而被製作成熱敏電阻(Therm “ hr )声 泛應用作保護元件、感測器及加熱器。 八 满人^ Γ ^子樹脂中推混導電粒子所形成的導體—絕緣體《 複口材糸、、先,有著如鈦酸鋇陶瓷在居禮溫度點的異 阻溫度係數行為。在升溫過程中,樹脂相的膨脹使得導體 粉”的距離增加,造成整體電阻值的上升 -亥皿度點之後’系統的電阻值會突然急遽地上彳,趨近於1236489 V. Description of the invention (2) (Perov sk ite) structure, the central titanium atom is surrounded by an octahedral structure composed of 6 oxygen atoms around it, and each barium atom is surrounded by 12 oxygen atoms In other words, barium and oxygen atoms form a face-centered cubic structure, and titanium atoms are located at the geometric center of the octahedron. Such a lattice structure gives barium titanate a special ferroelectric behavior: Under normal temperature, the 'Qin acid-locked lattice has a tetrahedral (Tetragonal) structure' and the Qin atoms are located away from the lattice geometry. The position of the center point therefore has a permanent dipole moment. At this time, the barium titanate material has strong electromotive (or ferroelectric) properties. However, after the temperature exceeds the Curie point (approximately 120 ° C), the four-sided cubic lattice phase changes into a cubic structure, the titanium atom is located at the geometric center of the cube, and the polarization axis (j) ipole axis ) No longer exists, so ferroelectricity also disappears. In short, after sintering, the barium titanate ceramics have ferroelectricity (ferroelectricity) at room temperature, but after the temperature exceeds the Curie Temperature, the lattice phase The change causes the ferroelectricity to disappear, so the resistance value rises sharply. The polycrystalline barium titanate (p-BaTi〇3) doped with ^ 3 has a sharp rise in resistance at its unique Curie temperature point, and has been made into a thermistor (Therm "hr) for acoustic protection. Components, sensors, and heaters. The conductor-insulator formed by pushing conductive particles in Yamani ^ Γ ^ sub-resin. It has the same temperature difference as the barium titanate ceramic at the Curie temperature point. Resistance temperature coefficient behavior. During the heating process, the expansion of the resin phase causes the distance of the conductor powder to increase, resulting in an increase in the overall resistance value-the resistance value of the system will suddenly rise sharply after the point of helium, and approaches to

1236489 五、發明說明(3) 樹脂相(Matrix)自身的阻值⑴。而樹脂的熱膨脹效應與其 玻璃轉移溫度(Tg)有著密切的關係··熱膨脹量隨著溫度的 上升而增加,轉折點是為玻璃轉移溫度,Tg以上為橡膠態 (Rubbery State)其熱膨脹係數CTE(Coefficient of Thermal Expansion)大於 Tg 點以下玻璃態(Glassy state) 區域的熱膨脹係數。當溫度達到玻璃轉移溫度後,樹脂基 材的熱膨脹量會較為增加,如此可將摻混於其中的導電粒 子間的距離更加擴大,造成電阻值隨溫度上升的幅度加劇 :若橡膠態的熱膨脹係數甚大於玻璃態的熱膨脹係數,則_ έ在到達玻璃轉移溫度點後,樹脂相的熱膨脹使得導電粒 子間距被撐開,導電通路無法彼此連續,造成電阻值急遽 上升’甚至達到開路的狀態(0pen c i rcu i t);此外,樹脂 基材中導電粒子的含量也會影響其PTC行為,若導電粒子 的含量不高,其所形成的導電通路會較為鬆散,使得在常 溫下的電阻值會較高,受熱時也較易因樹脂相的熱膨脹而 斷路,其PTC行為因而較為明顯;而導電粒子的大小亦會 影響其PTC行為:在相同填充量下,導電粒子的粒徑愈二 時,導電粒子的總表面積會愈大,粒子和粒子彼此接觸的 機率會增加,其所形成的導電通路會較為密集,電阻值受_ 樹脂基材膨脹的影響會因而減少,是以其pTc現象會較不 明顯。 曰乂 以高分子導電複合材作為具正電阻溫度係數行為的熱 敏電阻時,其導電填充物可以是純金屬粉體(4,5,6,9,1(),15,16)了1236489 V. Description of the invention (3) The resistance of the resin phase (Matrix) ⑴. The thermal expansion effect of the resin is closely related to its glass transition temperature (Tg). The thermal expansion amount increases with the increase in temperature. The turning point is the glass transition temperature. Above Tg is the rubbery state. Its thermal expansion coefficient CTE (Coefficient) The coefficient of thermal expansion is greater than that of the glassy state below the Tg point. When the temperature reaches the glass transition temperature, the thermal expansion of the resin substrate will increase, so that the distance between the conductive particles blended in it will be further expanded, causing the resistance value to increase with the temperature increase: If the thermal expansion coefficient of the rubbery state It is much larger than the thermal expansion coefficient of the glassy state. After reaching the glass transition temperature, the thermal expansion of the resin phase causes the distance between conductive particles to be stretched, and the conductive paths cannot be continuous with each other, causing the resistance value to rise sharply, or even to an open circuit state (0pen ci rcu it); In addition, the content of conductive particles in the resin substrate will also affect its PTC behavior. If the content of conductive particles is not high, the conductive paths formed by it will be loose, making the resistance value at room temperature higher. When heated, it is also easier to break due to the thermal expansion of the resin phase, so its PTC behavior is more obvious; and the size of the conductive particles will also affect its PTC behavior: Under the same filling amount, the more conductive particles, the more conductive particles. The larger the total surface area, the greater the probability that particles and particles will contact each other, and the conductive path formed by them will be smaller than Intensive, the resistance value is affected by the expansion of the resin substrate _ it will reduce the demand, a phenomenon pTc its less significant. When a polymer conductive composite material is used as a thermistor with a positive temperature coefficient of resistance behavior, its conductive filler can be a pure metal powder (4,5,6,9,1 (), 15,16).

第7頁 1236489 五、發明說明(4) 合金粒子(4, 16) X « ^ 山成 屬氧化物(5)、碳黑(4, 5, 7, 8, 9, 10, 11,12, 13, 14, 16, 17) 、石反纖維(9)、石墨… 導體的金屬私2 ^ 專,、有導電特性的物質。採用良 >屬粒子作為導電添加物,雖T % @ ^ μ μ Φ 阻值,但因金屬粒?:降低複合材枓的電 型製程中,金屬粒子於基材’於加工成 屬導體粒子在複合材料中=均易以:現:;ϊ金 子含量不足,而寺’因元件上層中金屬粒 不會有沉降的門題!碳黑或碳纖維雖然密度較小較 。一,ίΠ;子2碳黑的體積電阻值約為"Χ1。, --⑻高出甚/ 的/積電阻值(約為10-6 符合現今對於節省^;^呆其要戶^。耗的功率會較高,不 為了克服上述問題,可試著將 末表…來ί 去-< m 4 、陶是粉末的密度小於純金屬 5r诈 ,因重力所造成的沉降情形,又根據 ,可大幅減 導:止於導電物質表面一定厚度的範圍'效:,電流的傳 :導電粒子其導電特性與純金屬粒子 :以此種複合 數。陶竟材料的熱膨服率在':”二:。脹或熱膨服係< 料在1〜3x卿範圍,而高分子材料的執胗,金屬材 4〜2〇x 。高分子熱敏電阻的ρτ 、乃^率則尚達 的熱膨脹所引起的,以陶究粒子表面電以靠,脂基材 屬層所形成的Page 7 1236489 V. Description of the invention (4) Alloy particles (4, 16) X «^ Shancheng oxide (5), carbon black (4, 5, 7, 8, 9, 10, 11, 12, 13 , 14, 16, 17), stone antifibers (9), graphite ... conductor metals, ^ special, substances with conductive properties. Good > metal particles are used as conductive additives, although the T% @ ^ μ μ Φ resistance value, but because of metal particles? : In the electric process of reducing the composite material, the metal particles on the substrate are processed into conductive particles in the composite material. Both are easy to access: Now:; the gold content is insufficient, and the temple is not There will be settlement questions! Carbon black or carbon fiber is less dense though. First, the volume resistance value of Π2 carbon black is about " X1. , --⑻ is much higher than / / product resistance value (about 10-6 is in line with today's saving ^; ^ stay their key users ^. Power consumption will be higher, not to overcome the above problems, you can try to Table ... Let's go to-m 4, Pottery is a powder with a density lower than that of pure metal 5r, and the settlement caused by gravity can be greatly reduced: based on the range of the thickness of the surface of the conductive material 'effect: , The transmission of electric current: the conductive properties of conductive particles and pure metal particles: with this composite number. The thermal expansion rate of ceramic materials is in ':' two: the expansion or thermal expansion system < materials in 1 ~ 3x Qing Range, while the polymer material's stubbornness, metal material 4 ~ 20x. The polymer thermistor's ρτ, the rate is caused by the thermal expansion caused by the surface of the particles to rely on the lipid substrate Formed by

1236489 五、發明說明(5) 複合塑導電粒子,其熱膨脹量甚小於高分子基材,不會影 響到樹脂基材的熱膨脹,所以使用此類型的導電粒子除了 可以獲得優異的導電特性,也能得到甚佳的PTC特性。 當高分子導電複合材用做熱敏電阻時,其樹脂基材可 為熱固型樹脂或熱塑型樹脂。從分子結構的觀點來看,以 熱塑型樹脂作為系統基材會具有較高的熱膨脹性,pTC行 為會較明顯,且加工簡便,可採用熔融混鍊方法混合 (Extrusion compounding),成型方式亦可採用熱壓成型 法’為目别主要用來作為高分子熱敏電阻基材的樹脂種類 ,常用的有PE、HDPE、PP、PMMA、PS、…等,且熱塑性塑 膠原料成本低,加上不同塑膠材質有不同Tg,因而提昇元 件設計彈性,相較陶瓷類熱敏電阻的製程,須經高溫燒結 ( 1 300 °C以上)程序,使以熱塑型樹脂為基材的導電性高分 子複合材料,在熱敏電阻之應用上,較陶瓷材料更具競爭 而對熱塑型樹脂而t,當;显度超過熔點(Tm)後, 樹知會有軟化、變形及影響導電度等缺點。為了改善這些 =缺改”樹脂作為樹脂基材。熱固型樹 性較差的^ t寸女定性,但是加工較麻須以及熱膨脹 較f的問碭部疋影響其作為熱敏電阻基 鈦酸鋇陶究由於其晶格會隨溫度 行為’且其PTC行為具有回復性。對:而因而具有PTC t,谢π 1u >/V 對於咼分子熱敏電阻而 開,導電通路變得較不連續,電粒子間的距離被樓 付罕又+逆、、κ因而電阻值變大;冷卻時樹1236489 V. Description of the invention (5) The thermal expansion of composite plastic conductive particles is much smaller than that of polymer substrates, which will not affect the thermal expansion of resin substrates. Therefore, using this type of conductive particles can not only obtain excellent conductive properties, but also can Very good PTC characteristics were obtained. When the polymer conductive composite material is used as a thermistor, its resin substrate may be a thermosetting resin or a thermoplastic resin. From the perspective of molecular structure, using thermoplastic resin as the system substrate will have higher thermal expansion, pTC behavior will be more obvious, and processing is simple. It can be mixed by extrusion compounding, and the molding method is also The thermoforming method can be used as the type of resin mainly used as the base material of polymer thermistors. Commonly used are PE, HDPE, PP, PMMA, PS, etc., and the cost of thermoplastic raw materials is low. Different plastic materials have different Tg, which improves the design flexibility of the component. Compared with ceramic thermistors, the process of high temperature sintering (above 1 300 ° C) must be used to make conductive polymers based on thermoplastic resins. Composite materials, in the application of thermistors, are more competitive than ceramic materials and are more resistant to thermoplastic resins. When the brightness exceeds the melting point (Tm), it is known that there will be defects such as softening, deformation and affecting conductivity. In order to improve these = missing modified resins as resin substrates. The ^ t-inch female character of the thermosetting tree is poor, but the processing of the beard and the thermal expansion of the interfacial region affect its use as a thermistor barium titanate Tao studies that because its lattice will behave with temperature and its PTC behavior is restorative. Right: and therefore has PTC t, Xie π 1u > / V for the thermistor molecular thermistor opens, the conductive path becomes less continuous , The distance between the electric particles is reversed by Lou Fuhan + inverse,, κ and thus the resistance value becomes larger; when cooling, the tree

第9頁 1236489 五、發明說明(6) 月曰相會收縮,使得撕本4 1 ^ ,L ^ a 從行粒子和粒子間距離較受熱時減少,粒子 和粒子間接觸的機率@ ^ ^ ^ 丄尺 伐手~加,於是乎電阻值會逐漸下降,理 論上有可能回復到去戽# ΛΑϋΤΡ ^ j禾又熱前的狀態,如此,高分子熱敏電 :、订為亦應具有回復性。這樣的特性在電路設計中 可、,用來做為回復式開關(sw i t )、溫度器、加 器…等用途。 熱敏電阻作為保護元件的使用乃是於其上施加電壓或 電&、,隨著所施加電流的增加,其所累積的熱量會逐漸增 大,仏成树脂基材受熱而膨脹,進而導致電阻值的上升, 一旦到達類居禮溫度點後,電阻值急遽上升,造成其上所 能,過的電流急遽下降,形成有如保險絲(fuse)般限流的 功能。且電流值愈大,動作的時間會愈短,根據所施加的 電流值及其對應的時間可以繪製出電流對時間的反時特性 曲線。不同的系統組成、不同的導電粒子含量會具有不同 的反時特性曲線,可以藉由這樣的特性參數選擇適合的高 分子熱敏電阻做為系統的保護元件,其功能可以取代過電 ml電驛(CO Re祕)。此外,高分子熱敏電阻在作為保護元 件時,需考慮其所能承受的額定功率,以免超載電流將其 樹脂基材破壞,造成元件的損毁。 < 綜合以上所述,分別探討以陶瓷粒子表面電鍍金屬層 作為導電粒子的系統所具有的優點。圖一為使用純鎳金屬 粒子摻混於環氧樹脂(£?〇11828/八11〇&11^1^ 1 769 )中,均勻混 鍊後,進行熱硬化反應,製成導電厚膜樣品,其導電粒=Page 9 1236489 V. Explanation of the invention (6) The moon phase will shrink, making the tear 4 1 ^, L ^ a the distance between the particles and the particles is reduced when heated, and the probability of contact between particles and particles @ ^ ^ ^ The ruler cuts hands and adds, so the resistance value will gradually decrease. In theory, it is possible to return to the state before it went hot. In this way, the polymer thermistor: The order should also be restorative. . Such characteristics can be used in circuit design and can be used as return switches (sw i t), thermometers, adders, etc. The use of a thermistor as a protection element is to apply a voltage or electricity to it, as the applied current increases, the accumulated heat will gradually increase, and the resin substrate will expand when heated, which will cause the When the resistance value rises, once it reaches the Curie-like temperature point, the resistance value rises sharply, causing it to be able to do so, and the overcurrent suddenly drops, forming a current-limiting function like a fuse. And the larger the current value is, the shorter the action time will be. According to the applied current value and its corresponding time, the anti-time characteristic curve of current versus time can be drawn. Different system components and different conductive particle content will have different anti-time characteristic curves. You can use this characteristic parameter to select a suitable polymer thermistor as the protective element of the system. Its function can replace the over-current ml relay. (CO Re secret). In addition, when a polymer thermistor is used as a protection element, the rated power that it can withstand must be taken into consideration to avoid damage to the resin substrate caused by the overload current. < Based on the foregoing, the advantages of a system in which a plated metal layer on the surface of ceramic particles is used as the conductive particles are separately discussed. Figure 1 shows the use of pure nickel metal particles blended in epoxy resin (£? 11828 / eight 1110 & 11 ^ 1 ^ 1 769), after homogeneous chain mixing, thermal curing reaction is performed to make a conductive thick film sample , Its conductive particles =

第10頁 1236489 五、發明說明(7) 含量與體積電阻之關係, 表示’當試片不導電時 ^ 量以重量百分比 中括號裡的數字為試片%; ^阻;,2。一圖 (EP〇n828/Ancaminel 769 ) =二為在相同樹脂基材 所得之導電粒子含量盥表面鍍鎳之二氧化矽粒子 導電粒子的系統其開二且關係圖。以純鎳金屬為 相較於表面鑛鎳含量一, (3〇wt%),且有導電的試片其電阻值、分先有較^的重^含量 因為純錄金屬粒子的密度甚刀^^ ’才木究其原 導電粒子受重力作用而重力作用影響甚鉅’4 元件頂部為高,因而導電;子;;==導電:子密度較 敏電阻其常溫電阻值較高且大 :勻’所製備出的熱 化石夕粒子的系統其導電不而表面鑛錄之二氧 鍵錄所製備成的導電粒子且有取代化石夕粒子表面 圖—為純鎳金屬粒子摻混於環氧樹脂(Epon828/ Ancaminel769)中,的白、、曰爲你 本 成導電厚膜樣品後,於不硬化反應,製 度變化之關係圖。圖四為= 下體積電阻隨溫 u 口四馬在相同樹脂基材(Ep〇n828/ 2粒子含篁下體積電阻隨溫度變 發二r系統都具有於某-溫度點丄^ 電拉子的糸統,其電阻值急遽變化的溫度點較純錄金屬粒 第11頁 1236489 --—〜 五、發明說明(8) 子的系統A古 . 粒T受重二屬:為導電粒子的系統,其 的區域中,樹脂受縈2 ;導電粒子含量相對較^ ,因而電阻佶h…、私服較易將此區域中的導雷ii效Μ 罨阻值較易 XT的導電通路撐開 布較不均勻, 开而曰加。然而,因為粒早八 特性會以為導電粒子的“,其於p二: ‘=純土屬粒子的系統為佳。 订為方面的 金j:ί而言,本發明的内容在於說明如何蔣u 金屬層的陶瓷粒子乃々仃將以表面電鍍 穎的材料,名紅γ 冋熱敏電阻中,成為-種新 的用途當中乂金屬或碳黑作為導電填充材 和的要求。以下將就本專利的具體内容 二:專Page 10 1236489 V. Description of the invention (7) The relationship between the content and the volume resistance means that when the test piece is non-conductive, the amount is in weight percent. The number in square brackets is the test piece%; ^ resistance ;, 2. The first figure (EP〇828 / Ancaminel 769) = Second is the conductive particle content obtained on the same resin substrate. The surface of the nickel-plated silicon dioxide particles on the surface of the conductive particle system is divided into two and the relationship diagram. The pure nickel metal is compared with the surface mineral nickel content of one (30 wt%), and the conductive test piece has a resistance value and a weight of ^ because the density of the pure metal particles is very high ^^ 'Caimu's original conductive particles are affected by gravity and the effect of gravity is very large.' 4 The top of the element is high and therefore conductive; sub; The prepared system of thermal fossil particles has electrical conductivity instead of the conductive particles prepared by the surface oxygen record of the two oxygen bonds and has a surface map of the substituted fossil particles—for pure nickel metal particles mixed with epoxy resin (Epon828 / Ancaminel769), the white, and white are the relationship between the non-hardening reaction and the system change after you have made a conductive thick film sample. Figure 4 is the lower volume resistance with temperature u mouth four horses on the same resin substrate (EpON828 / 2 particles containing 篁 volume resistance with temperature changes. The two r systems all have a certain -temperature point 丄 ^ In the system, the temperature point at which the resistance value changes sharply is higher than that of purely recorded metal particles. Page 1212489 --- ~ V. Description of the invention (8) System A of the sub particle. Particle T is subject to heavy weight. It is a system of conductive particles. In its area, the resin is affected by 萦 2; the content of conductive particles is relatively ^, so the resistance 佶 h…, the service is easier to conduct lightning in this area ii Μ resistance value is easier to spread the conductive path of XT is less Uniform, open and add. However, because of the characteristics of the particles as early as the conductive particles, the "p": '= pure earth particles system is better. As for the aspect of the invention, the invention The content is to explain how the ceramic particles of the metal layer are 々 仃 will use the surface electroplating material, named red γ 冋 thermistor, as a new use among 乂 metal or carbon black as a conductive filler and Requirements. The following will describe the specific content of this patent:

二?說明,最後則就實施例所支持的範圍,提出U 發明洋細說明 為了解決導電粒子於樹脂基材中因重力所產生的沉降 問題,本發明所使用的導電粒子為複合型導電粒子:在非 金屬粒子表面電鍍金屬層。複合型導電填粒子中的非金屬 第12頁 1236489 五、發明說明(9) 粒子可以是密度較純金屬為低的陶瓷粉末、二氧化矽、 =粉末。將此種密度低、熱膨脹係數小的粒子粉末以盔= 電鍛的方式於其上電鍍金屬層或以化學或 . (sputW的方式沉積金屬層,使其具有導電性^以完 導電粒子的製備。所沉積的金屬可以是金、銀、銅、鎳··· 等金屬,視所使用的電鍍液配方或靶源所定。 ” 高分子熱敏電阻之樹脂基材方面則可依應用環境的 f選擇適當的樹脂,如欲製備成電阻值與溫度變化依存 ,的正電阻溫度係數型電阻(PTCR)元件,就需使用具有 鬲熱膨脹係數的長鏈型脂肪族系熱固型樹脂或熱塑型樹^鑄 ,如脂肪族系環氧樹脂、聚乙烯…等。如考慮加工的便^ ,,系統基材亦可使用具不飽和雙鍵可紫外光硬化的環氧 樹脂或亞克力樹脂,或是熱可硬化與光可硬化的樹脂混合 成雙官能性的樹脂系統,作為高分子基材。於紫外光可硬 化型樹脂中的光硬化起始劑(ph〇t〇 initiat〇r)可採用過 氧化物(peroxide)或偶氮化合物(Az〇c〇mp〇und)。 茲以下列應用實例說明,但本發明非受限於該些實例: 實施例一two? In the end, the range supported by the embodiment is proposed. In order to solve the problem of sedimentation of conductive particles in the resin substrate due to gravity, the conductive particles used in the present invention are composite conductive particles. The metal particles are plated with a metal layer. Non-metals in composite conductive filler particles Page 12 1236489 V. Description of the invention (9) The particles can be ceramic powder, silicon dioxide, powder with a lower density than pure metals. The low-density, small thermal expansion coefficient particle powder is electroplated with a metal layer on the helmet = electric forging or chemically or sputW to deposit the metal layer to make it conductive ^ to complete the preparation of conductive particles The deposited metal can be gold, silver, copper, nickel, etc., depending on the formula of the plating solution used or the target source. "The resin substrate of the polymer thermistor can be determined according to the application environment. Select the appropriate resin. If you want to make a positive resistance temperature coefficient type resistance (PTCR) element that depends on the resistance value and temperature change, you need to use a long-chain aliphatic thermosetting resin or thermoplastic with a thermal expansion coefficient. Tree casting, such as aliphatic epoxy resin, polyethylene, etc. If processing is considered, the system substrate can also use epoxy resin or acrylic resin with unsaturated double bonds that can be cured by ultraviolet light, or Thermo-curable and photo-curable resins are mixed to form a bifunctional resin system, which is used as a polymer substrate. The photo-curable initiator (ph〇t〇initiat〇r) in UV-curable resin can be used. Oxide peroxide) or azo compound (Azocompound). The following application examples are used for illustration, but the present invention is not limited to these examples: Example 1

1236489 敏化及氣化把(PdC 12)的活化處理,再置於聯胺鎳液中 行氧化還原反應,將鎳離子析出還原於二氧化秒粒/子表 ,最後於二氧化矽粒子上形成一均勻厚度的鎳金屬層以, 成導電粒子的製備’如圖六所示。系統基材為環氧脂& Epon82 8)搭配聚醯胺型硬化劑(Ancaminel 769 ),採比 EP〇n82 8/AnCami nel 769= 1 : 1,將上述電鍍好的導^粒里^ 依15〜45wt%的比例均勻摻混於所調配好的樹脂美材中、 以網版印刷的方式製備成厚膜電阻或以灌模的方借= 塊狀電阻,進行等溫交聯反應。利用精密電阻量 測高分子熱敏電阻的電阻值。圖二為導電粒子含量/丨 分率)與體積電阻的關係圖,圖中數字為試片的數目,= 試片不導電時,令體積電阻值為1〇12〇hm — cm。 ^ 摻雜量下,電阻值隨溫度變化的關係圖。®為不同 實施例二 在實施例一中系統基材可改A 搭配芳香族聚胺型硬化劑(DETA/、、、二=虱樹脂(Epon8 28) …再將二氧化.表的二當粒,^ 比例均勻摻混於所調配好的樹脂臭電板子依15〜60wt%的 與體積電阻的關係如圖七所示。;,^導電粒子含量 溫度變化的關係則如圖八所示。0 ♦雜1下,電阻值隨 第14頁 1236489 五、發明說明(11) 實施例三 在實施例一、二中可以更改電鍍液的配方,在二氧化 矽粒子表面以電鍍或無電電鍍的方式電鍍其它金屬如金、 銀、銅、紹…等。或是以物理錢鍵或化學濺鍛的方式,在 二氧化矽粒子表面沉積金屬層,以完成導電粒子的製備。 實施例四 在實施例一、二中的二氧化矽粒子可改以密度較純金 屬小的陶瓷粉末或黏土取代’再以電鍍或無電電鑛的方式 電鑛金屬如金、銀、銅、紹、鎳…等。或是以物理濺梦= 化學濺鍍的方式,在陶瓷粉末表面沉積金屬層,以6 = 電粒子的製備。 凡成導 在實施例一〜四中的糸姑甘 脂或光可硬化型亞克力樹脂2材::光,硬化型環氧樹 過氧化物(peroxide)或 %化合物(Azocompound)。將紫1236489 Sensitization and gasification (PdC 12) activation treatment, and then placed in hydrazine nickel solution for redox reaction, the nickel ions are precipitated and reduced to the second particle / sub-surface, and finally a silicon dioxide particle is formed. The preparation of nickel metal layer with uniform thickness to form conductive particles is shown in Figure 6. The base material of the system is epoxy resin & Epon82 8) with polyamine-type hardener (Ancaminel 769), the ratio is EP〇n82 8 / AnCami nel 769 = 1: 1. A ratio of 15 to 45 wt% is uniformly blended in the prepared resin material, and is prepared as a thick film resistor by screen printing or by means of a filling mold = block resistance to perform an isothermal crosslinking reaction. The resistance value of the polymer thermistor is measured with a precision resistor. Figure 2 shows the relationship between the content of conductive particles / fraction) and the volume resistance. The number in the figure is the number of test pieces. = When the test piece is not conductive, the volume resistance value is 1012hm—cm. ^ Relation between resistance value and temperature under doping. ® is different in the second embodiment. In the first embodiment, the system substrate can be changed to A with an aromatic polyamine type hardener (DETA / ,,, two = lice resin (Epon8 28)… and then oxidized. The ratio of 15% uniformly blended in the prepared resin odor-resistant board according to 15 ~ 60wt% and the relationship with the volume resistance is shown in Figure 7. The relationship of the temperature change of the conductive particle content is shown in Figure 8. 0 ♦ In case of miscellaneous 1, the resistance value varies with page 1236489 on page 14. V. Description of the invention (11) In the first and second embodiments, the formula of the plating solution can be changed, and the surface of the silicon dioxide particles can be electroplated or electrolessly plated. Other metals such as gold, silver, copper, Shao ... etc. Or a metal layer is deposited on the surface of the silicon dioxide particles by means of physical gold bonds or chemical sputtering to complete the preparation of conductive particles. Second, the silica particles in the second can be replaced by ceramic powder or clay with a density lower than that of pure metals, and then electro-mineralized metals such as gold, silver, copper, Shao, nickel, etc. by electroplating or electroless electricity ore. Or Physical sputtering dream = chemical sputtering, in A metal layer is deposited on the surface of the ceramic powder, and 6 = the preparation of electric particles. Fan Chengzhi or the light-curable acrylic resin 2 in the first to fourth embodiments: light, hardened epoxy resin peroxide Substance (peroxide) or% compound (Azocompound).

第15頁 1236489Page 12 1236489

五、發明說明(12) 劑與導電粒子 備成一厚膜狀 外光可硬化樹脂、光起始劑、樹脂黏度調整 攪拌混合,以網版印刷或刮膜成型的技_ I ,再以紫外光照射使之完全交聯。 實施例六V. Description of the invention (12) The agent and conductive particles are prepared as a thick film of external light hardenable resin, light initiator, and the viscosity of the resin is adjusted by mixing and mixing, and the technique of screen printing or doctor film forming is used. Irradiate to completely crosslink. Example Six

在實施例一〜 、光可硬化樹脂、 樹脂系統取代。將熱可硬化樹脂、紫外光可硬化樹脂、熱 硬化劑、光起始劑、樹脂黏度調整劑與導電粒子授掉混^ ,以網版印刷或刮膜成型的技術製備成一厚膜狀,再=^ 外光/熱逐步硬化的成膜技術,先經紫外光照射引發光可 硬化樹脂的交聯反應形成半膠化膜,產生能夠支撐半膠化 膜所需的結構,即俗稱的B-階段,此時導電填充物與熱可 硬化樹脂被包覆於紫外光可硬化樹脂的交聯網目中。製備 成的半膠化導電厚膜具有與其他製程整合的便利性,最後 再以熱硬化使之完全交聯。 實施例七 在實施例--四中的系統基材可以聚亞醯胺樹脂取代In the first embodiment, the photo-curable resin and the resin system are replaced. The thermosetting resin, UV-curable resin, thermosetting agent, light initiator, resin viscosity adjuster and conductive particles are mixed and mixed into a thick film by screen printing or film forming technology. = ^ The film formation technology of external light / heat stepwise hardening, firstly, the ultraviolet curable light initiates the crosslinking reaction of the photocurable resin to form a semi-gelatinized film, which produces the structure required to support the semi-gelatinized film, commonly known as B- In this stage, the conductive filler and the heat-curable resin are coated in the mesh of the ultraviolet-curable resin. The prepared semi-gelling conductive thick film has the convenience of integration with other processes, and finally it is completely cross-linked by thermal curing. Example 7 The system substrate in Example 4 may be replaced with a polyimide resin.

第16頁 1236489 五、發明說明(13) ’以溶劑法或熱融法的方式將複合型導電粒子均勻摻混於 其中’再以網版印刷的方式製備成厚膜電阻或以灌模的方 式製備成塊狀電阻或以押出機射出成形,殆溶劑完全揮發 後或溫度冷卻後即可成形,可得高溫型(應用於2 〇 〇以上 )的南分子熱敏電阻。 實施例八 在實施例七中將聚亞醯胺樹脂以一般熱塑型樹脂取代 ’如聚乙烯(PE)、高密度聚乙烯(HDPE)、低密度聚乙烯 (LDPE)、聚丙浠(PP)、乙烯/丙烯共聚物、聚2-甲基丙烯 酸甲酯(PMMA)、聚苯乙烯(PS)、…等。 參考文獻: ❿Page 16 1236489 V. Explanation of the invention (13) 'The compound conductive particles are uniformly mixed therein by the solvent method or the hot melt method' and then prepared into a thick film resistor by screen printing or by means of injection molding. It can be prepared into a block-shaped resistor or injection-molded with an extruder. After the volatilizing solvent is completely evaporated or the temperature is cooled, it can be formed. A high-temperature type (applicable to more than 2000) south molecular thermistor can be obtained. Example 8 In Example 7, the polyimide resin was replaced by a general thermoplastic resin such as polyethylene (PE), high density polyethylene (HDPE), low density polyethylene (LDPE), and polypropylene (PP). , Ethylene / propylene copolymer, polymethyl methacrylate (PMMA), polystyrene (PS), etc. References: ❿

1· G. R. Ruschau and R. E. Newnham, Journal of Composite Material s, Vol. 26, No. 18, 1 992. 2· P. W. Haayman, R. W. Dam, and H. A. K 1 asens, German Patent No. 29350,June, 1 955. 第17頁 1236489 五、發明說明(14) 3. G. Pearson, U. S. Patent No. 2, 258 958 1941 4·菲利普·小蕭恩、堂納·雷道爾、麥可·偉伯、麥可 •贺斯、湯姆·霍爾,’1 P T C電路保護裝置及其製造 方法”,中華民國專利30 0347號,1997 5 ·馬雲晉、王紹裘,π可變式熱敏電阻元件",中華民國 專利第42 49 1 6號,20 0 1 6 ·堀邊英天、西山逸雄、廣井治、森貞次郎、林龍也、 高橋知惠、村田士郎,π有機正溫度係數組成物及使 用該組成物之電路保護裝置",中華民國專利第 344828 號,1998 7 ·淺見圭一、岩屋嘉昭、越後良彰、伊藤顯,,,p T C元 件及其製法π ,中華民國專利第298653號,1997 8 ·辛·努顏,π用於電路的過電流保護的電裝置’,,中華 民國專利第3 83 5 1 8號,2 000 9 ·戶久直、高谷稔、守矢滋、小更恆、田宗光,,,有機 Ρ 丁 C熱變電阻器”,中華民國專利第3 1 2794號, 1997 1 0 ·理查·法蘭特季爾、理查·布恩思、麥克·幕農斯、 史考特·艾倫,’’含有正溫度係數電阻組合物之電氣 件及其製造之方法",中華民國專利第41 275 6號,2 00 0 11.巴妮琦·安、愛德華·朱,”含導電性聚合物之電氣裝 置’,,中華民國專利第428179號,2001 12·湯姆·霍爾,”改良之ρ τ c聚合體組合物”,中華民1. · GR Ruschau and RE Newnham, Journal of Composite Material s, Vol. 26, No. 18, 1 992. 2. · PW Haayman, RW Dam, and HA K 1 asens, German Patent No. 29350, June, 1 955. Page 17 1236489 V. Description of the invention (14) 3. G. Pearson, US Patent No. 2, 258 958 1941 4. Philip Shaw, Jonathan Doyle, Michael Weber, Michael • Hess, Tom Hall, '1 PTC Circuit Protection Device and Manufacturing Method', Republic of China Patent No. 30 0347, 1997 5. Ma Yunjin, Wang Shaoqiu, π Variable Thermistor Element ", Patent No. 42 49 1 6,20 0 1 6 · Eibe Hidetoshi, Nishiyama Yoshio, Hiroi Hara, Mori Seijiro, Lin Longya, Takahashi Tomoe, Murata Shiro, π organic positive temperature coefficient composition and circuit protection device using the composition ", Patent of the Republic of China No. 344828, 1998 7 · Kumiichi Iwaya, Yoshiaki Iwago, Yoshiaki Echigo, Ito Akio ,, p TC element and its production method π, Republic of China Patent No. 298653, 1997 π for circuit overcurrent protection "Electric device", Republic of China Patent No. 3 83 5 18, 2000 9 · Tokuhisa, Takatani, Mori Yasushi, Xiao Gengheng, Tian Zongguang ,, organic P D C thermal resistor ", Zhonghua Republic of China Patent No. 3 1 2794, 1997 1 0 · Richard Frantil, Richard Burns, Mike Munnons, Scott Allen, "Positive Temperature Coefficient Resistive Composition Electrical parts and methods of making them ", ROC Patent No. 41 275 6, 2000 0 11. Bannich Ann, Edward Zhu," Electrical Devices Containing Conductive Polymers ", ROC Patent No. 428179, 2001 12. Tom Hall, "Improved ρ τ c Polymer Composition", Chinese People

第18頁 1236489 五、發明說明(15) ( 國專利第371665號,1999 1 3 ·瓦力司·魯德,”具可變電路保護裝置之電氣設備”, 中華民國專利第3835 1 7號,2 0 0 0 14·程代均,”具有 自動溫度控制(P T C )性能的導 電高分子材料",中華民國專利第3571 78號,1999 15 ·亨利·華提爾、佛·雷格蘭、馬利安·柯文柏,”混合 金屬氧化物粉末之製造方法以及彼在獲得企求製造電 谷器及電阻器之粉末上的用途’’,中華民國專利第 208696號,1993 φ 1 6 ·湯姆·霍爾,”經改良之聚合型ρ 丁 c組成物及其於電 裝置及電路之用途”,中華民國專利第4〇5125號,2〇〇() 17.艾德華·福·朱、尼爾生·曲·索、維傑·瑞迪、丹 尼爾·艾·巧德勒,π導電性聚合物組合物”,中華民 國專利第31 4 63 3號,1997Page 1236489 V. Description of the invention (15) (National Patent No. 371665, 1999 1 3 · Walrus Ruder, "Electrical Equipment with Variable Circuit Protection Device", Republic of China Patent No. 3835 1 7 , 20000 14 · Cheng Daijun, "Conductive Polymer Materials with Automatic Temperature Control (PTC) Performance", Republic of China Patent No. 3571 78, 1999 15 · Henry Wattier, Folegland, Ma Lian Cowenbo, "Manufacturing Methods of Mixed Metal Oxide Powders and Their Uses in Obtaining Powders for Electric Valley and Resistors", Republic of China Patent No. 208696, 1993 φ 16 · Tom Hall, "Improved Polymeric Polybutadiene-C Composition and Its Use in Electrical Devices and Circuits", Republic of China Patent No. 4051125, 2000 () 17. Edward F. Zhu, Nielsen · Tricho, Vijay Ridi, Daniel A. Chodler, π Conductive Polymer Composition ", Republic of China Patent No. 31 4 63 3, 1997

第19頁 1236489Page 12 1236489

圖-使用純鎳金屬粒子摻現於環氧樹脂(Ep〇n828/ ΓΓ道elJ69)中,均句混鍊後,進行熱硬化反應 之5電厚膜樣品’其導電粒子含量與體積電阻 之關係圖 圖二 :用表面鍍鎳之二氧化矽粒子摻混於環氧樹脂Figure-The relationship between the content of conductive particles and the volume resistance of a 5-electric thick film sample that was mixed with epoxy resin (Ep 828 / ΓΓ 道 elJ69) using pure nickel metal particles and homogeneously mixed and then subjected to thermal hardening. Figure Figure 2: Nickel-coated silicon dioxide particles mixed with epoxy resin

Epon828/Ancaminel 7 69 )中,均勻混鍊後,進行熱 硬化反應,製成導電厚膜樣品,其導電粒子含量與 體積電阻之關係圖 圖三為純鎳金屬粒子摻混於環氧樹脂(Epon828/Epon828 / Ancaminel 7 69), after uniformly mixing the chain, heat curing reaction is performed to make a conductive thick film sample. The relationship between the content of conductive particles and the volume resistance is shown in Figure 3. Pure nickel metal particles are mixed with epoxy resin (Epon828 /

Ancaminel 7 69 )中,均勻混鍊後,進行熱硬化反應 ’製成導電厚膜樣品,於不同導電粒子含量下體積 電阻隨溫度變化之關係圖 圖四二氧化矽粒子表面電鍍鎳金屬層之導電粒子摻混於 環氧樹脂(£0〇]182 8/八11〇&11^1^1 769 )中,均勻混鍊後 ’進行熱硬化反應,製成導電厚膜樣品,於不同導 電粒子含量下體積電阻隨溫度變化之關係圖 圖五二氧化矽粒子的SEM照片Ancaminel 7 69), after homogeneous mixing of the chain, the thermal hardening reaction is performed to make a conductive thick film sample, and the relationship between the volume resistance and temperature at different conductive particle contents is shown in Figure 4. The conductivity of the nickel-plated metal layer on the surface of the silicon dioxide particles The particles are blended in epoxy resin (£ 0〇) 182 8 / eight 11〇 & 11 ^ 1 ^ 1 769), and after being mixed uniformly, the thermal hardening reaction is performed to make conductive thick film samples, and different conductive particles are used. Relationship between volume resistance and temperature change at different contents. Figure SEM photo of silicon dioxide particles

粒子電鍍鎳後的SEM照片SEM picture of particle after nickel plating

第20頁 12364891236Page 20

Claims (1)

1236489 六、申請專利範圍 硬化劑,係選自胺類(Amine)硬化劑、酸酐類( A n h y d r i d e )硬化劑、聚醯胺類硬化劑或其它常溫至高 溫(2 0 (TC以上)的潛變型硬化劑。 7、 如申請專利範圍第1項所述之高分子熱敏電阻,其中導 電填充材中的陶瓷粒子可為陶瓷粉末、黏土粉末或是 中空的玻璃球;在陶瓷粒子表面所電鍍的金屬層材質 可為金、銀、鎳、銅、鋁、錫或是其它合金,如鎳磷 合金;金屬層電鍍的方式包括電鍍及無電電鍍;電鍍 後導電粒子的直徑為0 . 1微米至1 0微米。 8、 如申請專利範圍第1項所述之高分子熱敏電阻,其中導 電填充材的添加量以整個系統為基準,佔4 5到8 0 w t %, 此高分子熱敏電阻在常溫下其體積電阻值小於1 0歐姆-公分。 9、 如申請專利範圍第1項所述之高分子熱敏電阻,其中添 加劑包括流動控制劑、分散劑、潤濕劑、枯度控制劑 、流變劑及偶合劑中至少一者,添加量為0至5wt°/〇。 1 0、一種以陶究粒子表面電鍍金属層作為導電性填充物換 混於橡膠態的熱膨脹係數至少為其玻璃態熱膨脹係數 1. 5倍以上之樹脂與硬化劑所組成的樹脂基材中所製 備的厚膜型高分子熱敏電阻,此厚膜型高分子熱敏電 阻硬化後厚度小於0 . 3公分,在2 5°C時具有小於1 0 0 0 歐姆的電阻值,其組成包括:(a )熱可硬化環氧樹脂 ;(b )紫外光可硬化的樹脂;(c )熱硬化劑;(d )光硬 化起始劑;(e )以陶瓷粒子表面電鍍金屬層之導電填1236489 VI. Patent application hardeners are selected from amine (Amine) hardeners, Anhydride hardeners, polyamidoamine hardeners, or other latent variants at room temperature to high temperature (above 20 (TC)) Hardener. 7. The polymer thermistor according to item 1 of the scope of patent application, wherein the ceramic particles in the conductive filler can be ceramic powder, clay powder or hollow glass balls; The material of the metal layer can be gold, silver, nickel, copper, aluminum, tin, or other alloys, such as nickel-phosphorus alloys; the plating method of the metal layer includes electroplating and electroless plating; the diameter of the conductive particles after plating is 0.1 micron to 1 0 micron. 8. The polymer thermistor described in item 1 of the scope of the patent application, wherein the amount of conductive filler is based on the entire system, accounting for 45 to 80 wt%. At room temperature, its volume resistance value is less than 10 ohm-cm. 9. The polymer thermistor as described in item 1 of the scope of patent application, wherein the additives include flow control agents, dispersants, wetting agents, dryness control At least one of a rheological agent, a rheological agent, and a coupling agent is added in an amount of 0 to 5 wt ° / 0. 10. A thermal expansion coefficient of at least one kind of electroplated metal layer on the surface of ceramic particles is used as a conductive filler in a rubbery state. Thick-film polymer thermistor prepared in a resin substrate composed of a resin and a hardener having a glassy thermal expansion coefficient of more than 1.5 times. The thickness of the thick-film polymer thermistor after hardening is less than 0.3. It has a resistance value of less than 1000 ohms at 25 ° C, and its composition includes: (a) a thermosetting epoxy resin; (b) a UV-curable resin; (c) a thermosetting agent; (D) Photohardening initiator; (e) Conductive filler with a metal layer plated on the surface of ceramic particles 第23頁 1236489_ 六、申請專利範圍 充材,直徑為0. 1微米至1 0微米,其量為樹脂基材及 導電填充材所構成之混合物總重之1 5至8 0重量百分比 ;(f)改善此混合物流動性及防沉降用之添加劑,其 量為混合物總重之0至5重量百分比。 1 1、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中之熱可硬化環氧樹脂係選自雙官能基或多官能 基的脂肪族系環氧樹脂與芳香族系環氧樹脂。 1 2、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中熱可硬化環氧樹脂的含量為10wt%至90wt%相對 於該(a) + ( b )樹脂系統總重量。 1 3、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中紫外光可硬化樹脂係選自含乙烯基或不飽和基 的樹脂,如紫外光可硬化型環氧樹脂與紫外光可硬化 型亞克力樹脂。 1 4、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中紫外光可硬化樹脂的含量為1 0 w t %至9 0 w t %相對 於該(a ) + ( b )樹脂系統總重量。 1 5、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中熱硬化劑,係選自胺類(Amine)硬化劑、酸酐 類(A n h y d r i d e )硬化劑、聚醯胺類硬化劑、或其它常 溫至高溫(2 0 (TC以上)的潛變型硬化劑。 1 6、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中光硬化起始劑,係選自過氧化物(p e r ο X i d e )或 偶氮化合物(Azocompound)。Page 23 1236489_ VI. Filling materials for patent application, with a diameter of 0.1 micrometers to 10 micrometers, the amount of which is 15 to 80 weight percent of the total weight of the mixture composed of the resin substrate and the conductive filler; (f ) An additive for improving the fluidity and anti-settling of the mixture in an amount of 0 to 5 weight percent of the total weight of the mixture. 1 1. The thick film polymer thermistor as described in item 10 of the scope of patent application, wherein the heat-curable epoxy resin is selected from a bifunctional or polyfunctional aliphatic epoxy resin and an aromatic resin. Family epoxy resin. 1 2. The thick film polymer thermistor as described in item 10 of the scope of the patent application, wherein the content of the heat-curable epoxy resin is 10 wt% to 90 wt% relative to the (a) + (b) resin system total weight. 1 3. The thick film polymer thermistor as described in item 10 of the scope of patent application, wherein the UV-curable resin is selected from resins containing vinyl or unsaturated groups, such as UV-curable epoxy Resin and UV-curable acrylic resin. 14. The thick film polymer thermistor as described in item 10 of the scope of patent application, wherein the content of the ultraviolet light curable resin is 10 wt% to 90 wt% relative to the (a) + (b ) Total weight of resin system. 15. The thick film polymer thermistor as described in item 10 of the scope of patent application, wherein the thermal hardener is selected from the group consisting of amine (Amine) hardener, acid anhydride (A nhydride) hardener, and polyfluorene. Amine-based hardeners or other latent hardeners at room temperature to high temperature (20 or more). 16. Thick film polymer thermistors as described in item 10 of the scope of patent application, in which light curing starts The initiator is selected from the group consisting of peroxides (per ο X ide) or azo compounds (Azocompound). 第24頁 1236489 六、申請專利範圍 1 7、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中導電填充材中的陶瓷粒子可為陶瓷粉末、黏土 粉末或是中空的玻璃球;在陶瓷粒子表面所電鍍的金 屬層材質可為金、銀、鎳、銅、鋁、錫或是其它合金 ,如鎳磷合金;金屬電鍍的方式包括電鍍及無電電鍍 ;電鍍後導電粒子的直徑為0. 1微米至1 0微米。 1 8、如申請專利範圍第1 0項所述之厚膜型南分子熱敏電阻 ,其中導電填充材的添加量以整個系統為基準,佔4 5 到8 0 w t %,此厚膜型高分子熱敏電阻在常溫下其體積 電阻值小於1 0歐姆-公分。 1 9、如申請專利範圍第1 0項所述之厚膜型高分子熱敏電阻 ,其中添加劑包括流動控制劑、分散劑、潤濕劑、粘 度控制劑、流變劑及偶合劑中至少一者,添加量為0 至 5 w t % 〇 2 0、一種製備厚膜型高分子熱敏電阻的方法,如申請專利 範圍第1 0項的厚膜型高分子熱敏電阻,先利用紫外光 引發光可硬化樹脂的交聯反應,產生半膠化的薄膜, 再以熱硬化引發環氧樹脂的交聯反應,形成高分子導 電複合膜。Page 24 1236489 6. Application for patent scope 1 7. The thick film type polymer thermistor as described in item 10 of the scope of patent application, wherein the ceramic particles in the conductive filler can be ceramic powder, clay powder or hollow Glass balls; the metal layer plated on the surface of ceramic particles can be gold, silver, nickel, copper, aluminum, tin or other alloys, such as nickel-phosphorus alloys; metal plating methods include electroplating and electroless plating; conductive after plating The diameter of the particles is from 0.1 μm to 10 μm. 18. The thick film type south molecular thermistor as described in item 10 of the scope of patent application, in which the amount of conductive filler is based on the entire system, accounting for 4 5 to 80 wt%. This thick film type has high The molecular thermistor has a volume resistance value of less than 10 ohm-cm at normal temperature. 19. The thick film polymer thermistor as described in item 10 of the scope of patent application, wherein the additives include at least one of a flow control agent, a dispersant, a wetting agent, a viscosity control agent, a rheological agent, and a coupling agent. For a thick-film polymer thermistor with an addition amount of 0 to 5 wt% 〇2 0, such as the thick-film polymer thermistor under the scope of patent application No. 10, first use ultraviolet light to trigger The cross-linking reaction of the photo-curable resin produces a semi-gelatinized film, and the cross-linking reaction of the epoxy resin is initiated by thermal curing to form a polymer conductive composite film. 第25頁Page 25
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115331902A (en) * 2022-05-26 2022-11-11 昆山聚达电子有限公司 PTC thermistor element processing technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115331902A (en) * 2022-05-26 2022-11-11 昆山聚达电子有限公司 PTC thermistor element processing technology
CN115331902B (en) * 2022-05-26 2024-04-02 昆山聚达电子有限公司 PTC thermistor element processing technology

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