1233118 A7 五、發明說明（1 ) [發明所屬技術領域] 本發明係有關一種使光記錄媒體用原盤曝光之原盤曝 光裝置及原盤曝光方法，如更詳細說明，即關於一種適於 使塗布有化學增幅型（化學連鎖反應型）光阻劑之原盤曝光 的原盤曝光裝置及原盤曝光方法。 [習知之技術] 近年來’隨著藍色半導體雷射之實用化，光碟等之光 記錄媒體之高密度化飛快在進步。使光記錄媒體高密度化 之方法之一，例如有使光點直徑微小化，以高密度地記錄 資訊之方法。光記錄的情況下，光點直徑是以λ /N A表示。 於此之λ表示雷射之波長，ΝΑ表示接物鏡之開口數。因 此’縮短雷射光之波長或是增加接物鏡之ΝΑ，即可使光點 微小化，而成高密度之記錄。 隨著光碟之高密度化，光碟之原版製作製程中，也需 要利用凹坑及溝槽之微細化獲得高密度化。於光碟之原版 製作製程中，和一般記錄再生用的驅動裝置不同，是使用 專用的原盤曝光裝置（也可稱切割機或是雷射光束記錄器 (LBR))。於原盤曝光裝置中所使用的接物鏡之ΝΑ，通常為 〇·9之程度，接物鏡之開口數要高於〇· 9以上有其難處。 因此，縮短曝光裝置中所用之雷射之波長，成為高密度化 之有效方法。最近波長為200nm範圍的Deep—uv領域的光 源不斷地在開發中。 光碟的原版製作製程和半導體的微影製程相似。於光 碟的情況下是於塗布有光阻劑之玻璃原盤上，照射由接物 私紙張尺度適用中國國家標準（CNS)A4規格（21G X 297公髮） 312129 (請先閱讀背面之注意事項再辦寫本頁) · .線- 經濟部智慧財產局員工消費合作社印製 1 1233118 五、發明說明（2) 鏡聚光之雷射光束，而使光阻劑感光（曝光）。以往的光碟 原版製作，是以半導體的g線或是I線所用之光阻劑當成 光阻劑。但是，隨著曝光光線的短波長化，這些光阻劑會 有光阻劑的感度問題，或是曝光光線之波長會變成為構成 光阻劑之分子的吸收領域之波長，因而在光阻劑之表面領 域會吸收曝光光線，以致曝光光線無法射入光阻劑之内 部，而產生光阻劑之透明性的問題。 為了解決此問題，使得化學增幅型之光阻劑受到褐 目。化學增幅型之光阻劑藉由光之照射會產生酸，利用此 化學反應可形成像。此種化學增幅型光阻劑可解決前述光 阻劑之感度及透明性之問題，在半導體領域中，已利用波 長248nm之KrF準分子雷射微影而實用化。 經濟部智慧財產局員工消費合作社印製 關於習知型光阻劑及化學增幅型光阻劑之不同處，參 照第2至4圖簡單說明如下。習知型光阻劑的主要成分是 以甲紛清漆樹脂所做成之原料聚合物，及蔡醒疊氮等感光 劑所成。正型光阻劑於曝光前具有不溶於鹼顯像液之構 造。光阻劑以雷射光束曝光後，曝光部分之感光劑會經過 第2圖所示之轉移反應而變成萌叛酸。藉此，如第&圖所 示’曝光部分之感光劑會變成可溶於鹼性之顯像液中，曝 光領域即可除去，以形成像。 另一方面，化學增幅型之光阻劑是由鎏鹽等光酸產生 劑’及以酸解離性之保護基保護苯酚性水酸基等驗可溶基 之樹脂所組成。如第4圖所示，化學增幅型光阻劑藉由雷 射光束而曝光後，會由酸產生劑產生酸。之後，所產生的 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 2 312129 1233118 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（3 ) 酸由於攻擊由保護基所保護之部份的脫保護基反應，產生 可溶於碱之苯_性基。於第3圖中，表示脫保護型之化學 增幅型正型光阻劑之化學反應。脫保護基反應後，酸會再 生，並進行連鎖反應。在通常的情況下，為提高其感度， 係於曝光後以一定之時間及一定之溫度，進行後曝光烘烤 (PEB; Post Exposure Baking)，並且使該化學反應進行 以形成像。如此藉由使用化學增幅型光阻劑，可於光碟原 版製作製程中，對應短波長化之雷射光，使光碟之高密度 化成為可能。 [發明所欲解決之問題] 如上所述，由於化學增幅型光阻劑具備高感度及高解 像之特徵，所以使用於利用短波長光源之微影技術。可是， 化學增幅型光阻劑有其特有的問題。例如，於化學增幅型 光阻劑中所使用的酸產生劑（酸觸媒），會因空氣中之胺或 阿摩尼亞等鹽基性不純物而失效。因此，將不能進行表層 部之反應’而產生無法獲得所期望之形狀之問題。另外， 化學增幅型光阻劑是利用化學反應形成像，所以化學反應 的時間相當重要。化學反應之時間如果不同，所形成的像 的形狀也會不同。使用微影技術之半導體曝光操作中是採 用以曝光裝置（步進器），使塗布有光阻劑之晶圓的區分領 域逐漸曝光的步進掃瞄方式，由於晶圓面積不會很大，所 以一片晶圓之各區分領域曝光後的經過時間相差無幾。因 此’於半導體之曝光步驟的情況下’使用化學增幅型光阻 劑，也不會特別產生因化學反應時間的不一以致光阻劑之 項 頁 訂 線 本紙張尺度適用中國國家標準（CNS)A4規格（210 ： 312129 1233118 A71233118 A7 V. Description of the Invention (1) [Technical Field of the Invention] The present invention relates to an original disc exposure device and an original disc exposure method for exposing an optical recording medium with an original disc. Master disk exposure device and master disk exposure method for master disk exposure of amplification type (chemical chain reaction type) photoresist. [Knowledgeable Technology] In recent years, as blue semiconductor lasers have been put into practical use, the density of optical recording media such as optical discs has rapidly progressed. One of the methods for increasing the density of an optical recording medium is, for example, a method of minimizing the diameter of a light spot and recording information at a high density. In the case of optical recording, the spot diameter is expressed by λ / NA. Here, λ represents the wavelength of the laser, and NA represents the number of openings of the objective lens. Therefore, by shortening the wavelength of the laser light or increasing the NA of the objective lens, the light spot can be miniaturized and a high-density recording can be achieved. With the increase in the density of optical discs, it is also necessary to use the miniaturization of pits and grooves to achieve high densities in the original manufacturing process of optical discs. In the production process of the original version of the optical disc, unlike the general recording and reproducing drive device, a dedicated original disc exposure device (also called a cutting machine or laser beam recorder (LBR)) is used. The NA of the objective lens used in the original disc exposure device is usually about 0.9, and the number of openings of the objective lens is higher than 0.9, which has its difficulties. Therefore, shortening the wavelength of the laser used in the exposure apparatus becomes an effective method for increasing the density. Light sources in the deep-uv field with a wavelength of 200 nm recently are continuously being developed. The original disc manufacturing process is similar to the semiconductor lithography process. In the case of optical discs, the original glass coated with photoresist is irradiated. The size of the paper is applied to the standard of China National Standard (CNS) A4 (21G X 297). 312129 (Please read the precautions on the back first) (Write this page) · .Line-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 1233118 V. Description of the invention (2) The laser beam condensed by the mirror, so that the photoresist is exposed (exposed). In the original production of the original optical disc, the photoresist used in the semiconductor's g-line or I-line was used as the photoresist. However, with the shortening of the exposure light, these photoresists will have sensitivity problems of the photoresist, or the wavelength of the exposure light will become the wavelength of the absorption field of the molecules constituting the photoresist. The surface area will absorb the exposure light, so that the exposure light cannot enter the interior of the photoresist, and the transparency of the photoresist is a problem. To solve this problem, the chemically amplified photoresist is subjected to brown eyes. Chemically amplified photoresist generates acid by irradiation with light, and an image is formed by this chemical reaction. Such a chemically amplified photoresist can solve the aforementioned problems of sensitivity and transparency of the photoresist. In the semiconductor field, KrF excimer laser lithography with a wavelength of 248 nm has been put into practical use. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The differences between the conventional photoresist and the chemically amplified photoresist are briefly described with reference to Figures 2 to 4 below. The main components of the conventional photoresist are raw materials polymers made of methyl varnish resin, and photosensitizers such as Caixing azide. The positive photoresist has a structure insoluble in an alkali developer solution before exposure. After the photoresist is exposed with a laser beam, the exposed portion of the photosensitizer will undergo a transfer reaction as shown in Fig. 2 and become an acid. Thereby, as shown in FIG. &Amp;, the photosensitive agent in the exposed portion becomes soluble in an alkaline developing solution, and the exposed area can be removed to form an image. On the other hand, a chemically amplified photoresist is composed of a photoacid generator such as a sulfonium salt, and a resin having a soluble group such as a phenolic hydroacid group protected by an acid dissociative protective group. As shown in Figure 4, after the chemically amplified photoresist is exposed by a laser beam, an acid is generated by the acid generator. After that, the paper size produced was applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 2 312129 1233118 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) The acid was protected by the attack The deprotection of the protected portion of the group reacts to produce a benzene-soluble group that is soluble in the base. Figure 3 shows the chemical reaction of a deprotected chemically amplified positive photoresist. After the deprotection reaction, the acid is regenerated and a chain reaction occurs. In general, in order to increase the sensitivity, post exposure baking (PEB; Post Exposure Baking) is performed at a certain time and temperature after exposure, and the chemical reaction is performed to form an image. In this way, by using a chemically amplified photoresist, it is possible to correspond to short-wavelength laser light in the original disc manufacturing process, making it possible to increase the density of the optical disc. [Problems to be Solved by the Invention] As described above, since the chemically amplified photoresist has characteristics of high sensitivity and high resolution, it is used for a lithography technique using a short-wavelength light source. However, the chemically amplified photoresist has its unique problems. For example, acid generators (acid catalysts) used in chemically amplified photoresists may fail due to amines in the air or basic impurities such as ammonium. Therefore, the reaction of the surface layer portion cannot be performed, and a problem that a desired shape cannot be obtained arises. In addition, the chemically amplified photoresist is formed by a chemical reaction, so the time of the chemical reaction is very important. If the chemical reaction time is different, the shape of the formed image will also be different. In the semiconductor exposure operation using lithography technology, a step-and-scan method is used to gradually expose the divided areas of the wafer coated with photoresist with an exposure device (stepper). Since the wafer area will not be large, Therefore, the elapsed time after exposure of the different areas of a wafer is almost the same. Therefore, the use of chemically amplified photoresist 'in the case of semiconductor exposure steps' will not result in special photoresist items due to the difference in chemical reaction time. The paper dimensions are subject to Chinese National Standards (CNS) A4 specifications (210: 312129 1233118 A7
4 312129 1233118 A7 經 濟 部 智 慧 貝才 產 局 圣 消 費 合 作 社 印 五、發明說明（5 原盤上之光阻劑之凹坑及溝槽’全面以均一的形狀曝光之 曝光方法。 [解決問題之方案] 依據本發明第一態樣，可提供一種用以使塗布有光阻 劑之原盤曝光之原盤曝光裝置，其特徵為具有：使塗布於 刖述原盤上之光阻劑曝光之光源，使前述光源所發射出之 曝光光線能集中照射於光阻劑上之接物鏡，以及用來加熱 曝光後之光阻劑之熱源。 本發明之原盤曝光裝置係例如第1圖所示，在使曝光 光線集中照射於原盤上之接物鏡n的附近，設置有用來加 熱或烘烤曝光後之光阻劑之熱源12。該熱源最好配置成在 曝光時，旎夠於原盤上方掃瞄由曝光光線曝光後之區域。 如此，可使一邊光阻劑以所期望的圖案曝光，一邊加熱（或 烘烤）曝光過的光阻劑。熱源可使用例如波長600nm以上 之長波長的雷射光或以電熱線圈傳導輻射熱之加熱器。另 外，熱源亦可以固定或可拆裝的方式裝設於曝光裝置上。 或是，也可以能隨著設於曝光裝置上之接物鏡移動之方式 裝設。如採可隨之位移之設置，例如只要以下述方式移動 即可’由内周向外周移動接物鏡，以使原盤曝光時，係使 熱源位於比接物鏡更靠近内周側，由外周朝内周曝光時， 則係使熱源位於接物鏡之外周側。為改變熱源之位置，例 如/、要於曝光裝置之頭部設置致動器或可動支臂等可動構 件，並將熱源裝設於可動構件上即可。依前述之構成，不 f I照、# A A線的掃瞄方向，而可經常供烤嗓光後之領 Ϊ紙張尺度適用中國國家標準（cns)A4 312129 (請先閱讀背面之注意事項再却寫本頁) 太 ^-------訂---------線 0 1233118 A7 五、發明說明（6 ) 域。 另外，於本發明之原盤曝光裝置中，設有可檢測原盤 表面上熱源高度之感測器。為使熱源保持於原盤表面上一 定之高度，前述感測器可對於控制熱源高度用的驅動裝置 施加反饋。以長波長雷射光當熱源的情況下，不須要如曝 光光線一樣，用接物鏡集中並縮小光點之直徑。用以控制 熱源高度之驅動裝置，也不須要如接物鏡之自動對焦裝置 般精密。另外，以熱源加熱光阻劑時，因為一次加熱數十 執跡以上之區域，其加熱效果較高，所以，熱源應配置於 比用來聚集曝光光線之接物鏡高之位置。於實際曝光過程 中，熱源是沿著一條一條之軌跡，往執跡寬度方向逐次照 射，所以熱源會通過原盤上同一地方數次。如此，同一區 域會經過數之烘烤，該區域上之光阻劑便可進行充分之化 學反應。 另外，熱源上為控制加熱光阻劑之溫度，所以設置溫 度調節裝置。溫度調節裝置可使熱源所產生之熱固定於一 定之溫度，也可隨熱源於原盤上之位置而移動。原盤曝光 過程中’使原盤旋轉的方法有CLV(固定線速度）方式及 C AV(固定角速度）方式。如以CLV方式，於曝光過程中， 曝光光線所照射到之部份，其線速度於原盤上任何一位置 皆為一定’所以將熱源所產生之熱經常固定於一定之溫度 即可。另一方面，如以CAV方式，於曝光過程中，曝光光 線所照射部分之線速度並不一定，所以，隨著半徑位置而 控制加熱器之溫度較好。因為，原盤上任何一個地方之光 312129 本紙張尺度適用中國國家標準（CNS)A4規格⑵G x 297公i) 1233118 A7 B7 五、發明說明（7 ) 劑白最好以同樣之熱量烘烤。如裝設有此溫度調節裝 之二Γ以CLV方式或是CAV方式，其曝光後之光阻劑 之烘烤經過時間及烘烤狀態皆可相同，所以原盤上從内周 卜周可开y成均一凹坑及溝槽形狀。而溫度調節裝置更; 依塗布於原盤上之光阻劑之種類，適當調整光阻劑之 溫度。 …、 依據本發明第2態樣，提供一種以雷射光掃瞄塗布有 光阻劑之原盤，使原盤上之光阻劑以所希望的圖案感光之 原盤曝光方法，其特徵在於：一邊以雷射光掃晦原盤，一 邊加熱該感光後的光阻劑。 本發明之原盤曝光方法係一邊以雷射光掃聪原盤使 形成於原盤上之光阻劑，以所希望的圖案曝光一邊曝光 後之光阻劑，以例如波長600nm以上長波長之雷射光或使 用輻射熱之加熱器等熱源加熱。藉此’例如於曝光塗布有 化學增幅型光阻劑之原盤時，整個原盤上，該化學增幅型 光阻劑之化學反應所進行的時間可一樣。此結果，可使原 盤從内周至外周，以均一的溝槽及凹坑之形狀進行曝光， 然後從此原盤，可製造出全面性具有微細且均一形狀凹坑 及溝槽之基板。因此’此曝光方法’相當適合用於超高密 度記錄用之光碟原盤之曝光上。 於本發明中，塗布於原盤上之光阻劑，以化學增幅型 i|之光阻劑較為理想，該化學增幅型光阻劑不管為正型或負 型型態皆可使用。化學增幅型光阻劑，例如可使用以婆鹽 當光酸產生劑’以聚乙烯基苯酚當原料聚合物，以t一丁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 7 312129 閱 讀 背 忍 事 項 再 頁 線 1233118 五、發明說明（8) 乳幾基當保護基者。 [發明之實施型態] 以下，以實際例說明本發明之原盤曝光裝置及原盤曝 光方法。但是本發明並不限定於此。 [實施例] 對於本發明之原盤曝光裝置之實施例，以圖面加以說 明第5圖為原盤曝光裝置之概略構成圖。原盤曝光裝置 100主要疋由，包含雷射光源（未顯示於圖上），及調變器（未 顯示於圖上）之固定光學系統51，為旋轉原盤1〇之轉盤 52，使頭部53高精密度地水平移動於原盤1〇上之滑件 54使巧件54水平移動之驅動裝置55所構成。於滑件54 上設有精密之自動對焦装置（未顯示於圖上），藉由使滑件 正確地朝水平方向移動，可使溝槽或凹坑以螺旋狀曝 光。 π件54之頭部53係如第！圖所示’設有使雷射光（曝 光光線)聚光於原盤10上之接物鏡11，及作為加熱經過曝 光後之光阻劑之熱源的紅外線加熱器12。紅外線加熱器12 經濟部智慧財產局員工消費合作社印製 係由可動式之支持臂13支樓。支持臂13内部設有用來控 制溫度之溫度調整裝置(未顯示於圖上)，可適宜地調整紅 外線加熱12之溫度。另外， ^ ^ 1Λ ^ 卜於支持臂13設有可檢測距離 =所檢:：高度之感測器(未顯示於圖上)，而可根據感 綱檢測出之位置情報’控制支持臂13往上或往下，以 調整紅外線加熱器12之高度位置。 於第5圖1，原盤10放置於轉盤”上。轉盤52可如 μ氏張尺度_ t _ χ 视） __ 8 312129 1233118 A7 _____ B7 五、發明說明（9 順時鐘方向或逆時鐘方向以任意的旋轉數旋轉。固定光學 系統51内部所設置之雷射光源4 4倍高諸波之雷 射，波長為266nm，輸出為1〇mW。冑射光源所射出的雷 射光（曝光光線）係由接物鏡集中至繞射界限，而照射在形 成於原盤上之光阻劑。以下說明以原盤曝光裝置使原 光之方法。 首先，準備20〇mm之石英玻璃基板，並於該石英玻璃 基板上塗上80nm膜厚之正型化學增幅型光阻劑以製作 玻璃原盤。然後，將所製得之玻璃原盤放置於原盤曝光裝 置1〇〇之轉盤52上，一邊旋轉轉盤，同時進行曝光。曝光 時之原盤的旋轉方式為CLV方式，其線速度為3 5m/s。紅 外線加熱器之溫度固定於丨⑼□。以DC信號為曝光信號， 由驅動裝置55水平移動滑件54，並進行曝光，可形成軌 跡間距〇.37_之雙螺旋形式之突起部與溝部（iand_ gr〇〇Ve)。在曝光光線從原盤之半徑20mni照射至6〇mm之 期間啟動紅外線加熱器，以加熱（同時烘烤）剛曝光後之 y光阻劑部分。原盤之曝光約需2小時。於曝光時，從比半 徑20mm更内周開始啟動紅外線加熱器而曝光完後，使 紅外線加熱益移動至比半徑6〇mm更外周侧使藉由紅外 線加熱器烘烤光阻劑之時間，從最内周至最外周皆為一 定。 接下來，使經過曝光及烘烤之原盤，利用碱性顯像液 顯像藉由顯像溶解曝光部分，而僅留下未曝光之部分， _即可製^彡成有所期待之凹凸圖案之原盤。對於以此所製 丨本紙；度適 312129 1233118 A74 312129 1233118 A7 Printed by the Ministry of Economic Affairs and the Smart Consumer Product Bureau of the Holy Consumers Cooperative, V. Invention Description (5 The pits and grooves of the photoresist on the original disk 'are fully exposed in a uniform shape. [Solution to the problem] According to a first aspect of the present invention, a master disc exposure device for exposing a master disc coated with a photoresist can be provided, which is characterized by having a light source for exposing a photoresist coated on a master disc described above, and aforesaid light sources. The emitted exposure light can be focused on the objective lens on the photoresist and a heat source for heating the photoresist after exposure. The original disk exposure device of the present invention is shown in FIG. A heat source 12 for heating or baking the exposed photoresist is provided near the objective lens n which is irradiated on the original disc. The heat source is preferably configured to be enough to scan over the original disc after exposure by the exposure light during exposure In this way, the exposed photoresist can be heated (or baked) while the photoresist is exposed in a desired pattern. The heat source can be, for example, a wavelength of 600 nm or more. Long-wavelength laser light or a heater that conducts radiant heat with an electric heating coil. In addition, the heat source can also be mounted on the exposure device in a fixed or detachable manner. Alternatively, it can also be attached to the objective lens on the exposure device Install in a moving way. If you can move with the setting, for example, you can move in the following way: 'Move the objective lens from the inner periphery to the outer periphery, so that when the original disc is exposed, the heat source is located closer to the inner periphery than the objective lens. Side, when the exposure is from the outer periphery to the inner periphery, the heat source is located on the outer peripheral side of the objective lens. To change the position of the heat source, for example, a movable member such as an actuator or a movable arm is provided on the head of the exposure device, and The heat source can be installed on the movable member. According to the foregoing structure, the scanning direction of the F I photo and # AA line is not required, and the collar can be used for the voice after baking, and the paper size applies the Chinese national standard (cns) A4 312129 (Please read the precautions on the back before writing this page) Too ^ ------- Order --------- Line 0 1233118 A7 V. Description of Invention (6) Domain. In addition, in The original disc exposure device of the present invention is provided with a detectable original Sensor for the height of the heat source on the surface. In order to maintain the heat source at a certain height on the surface of the original disk, the aforementioned sensor can provide feedback to the driving device for controlling the height of the heat source. In the case of using a long-wavelength laser light as the heat source, it is not necessary As with the exposure light, the objective lens is used to focus and reduce the diameter of the light spot. The driving device for controlling the height of the heat source does not need to be as precise as the objective lens's autofocus device. In addition, when heating the photoresist with a heat source, Heating the area with more than tens of tracks, the heating effect is higher, so the heat source should be located higher than the objective lens used to gather the exposure light. In the actual exposure process, the heat source is along a trajectory, The irradiation in the width direction of the track is performed successively, so the heat source will pass through the same place on the original disk several times. In this way, the same area will be baked for several times, and the photoresist on this area can undergo a sufficient chemical reaction. In addition, a temperature adjustment device is provided on the heat source to control the temperature of the heating photoresist. The temperature adjustment device can fix the heat generated by the heat source at a certain temperature, and can also move with the position of the heat source on the original disk. During the original disc exposure process, the method of rotating the original disc includes a CLV (fixed linear velocity) method and a C AV (fixed angular velocity) method. For example, in the CLV method, during the exposure process, the linear velocity of the part exposed by the exposure light is constant at any position on the original disk ', so the heat generated by the heat source can often be fixed at a certain temperature. On the other hand, in the case of the CAV method, during the exposure process, the linear velocity of the portion irradiated by the exposure light is not necessarily, so it is better to control the temperature of the heater with the radial position. Because, the light of any place on the original plate 312129 This paper size is applicable to Chinese National Standard (CNS) A4 size ⑵G x 297 male i) 1233118 A7 B7 V. Description of the invention (7) The agent white is best baked with the same heat. If the temperature adjustment device 2 is installed in the CLV method or the CAV method, the baking elapsed time and baking state of the photoresist after exposure can be the same, so the original disk can be opened from the inner periphery to the inner periphery. Form a uniform pit and groove shape. And the temperature adjustment device is even more appropriate to adjust the temperature of the photoresist according to the type of photoresist coated on the original disk. .. According to the second aspect of the present invention, there is provided a method for exposing a master disk coated with a photoresist by laser light, and exposing the photoresist on the master disk to a photoreceptor in a desired pattern. The light scans the original disk, and heats the photosensitive resist while heating. The method for exposing the master disk of the present invention is to use a laser light to scan the original disk to expose a photoresist formed on the master disk and expose the photoresist in a desired pattern while exposing the photoresist to, for example, a laser light with a wavelength of 600 nm or longer Heated by a heat source such as a radiant heater. By this, for example, when exposing a master plate coated with a chemically amplified photoresist, the chemical reaction time of the chemically amplified photoresist may be the same on the entire master. As a result, the original disk can be exposed in the shape of uniform grooves and pits from the inner periphery to the outer periphery, and then a substrate having fine and uniform shapes of pits and grooves can be manufactured from the original disk. Therefore, 'this exposure method' is quite suitable for the exposure of an optical disc master for ultra-high-density recording. In the present invention, the photoresist coated on the original disk is preferably a chemically amplified photoresist i |. The chemically amplified photoresist can be used regardless of whether it is a positive type or a negative type. Chemical amplification type photoresist can use, for example, salt as photoacid generator, and polyvinyl phenol as raw material polymer. Applicable to China National Standard (CNS) A4 (210 X 297) (%) 7 312129 Read back-tolerance matters and re-page line 1233118 V. Description of the invention (8) Those who use milk as protection base. [Implementation Mode of the Invention] Hereinafter, a master disc exposure apparatus and a master disc exposure method according to the present invention will be described using actual examples. However, the present invention is not limited to this. [Embodiment] An embodiment of the master disc exposure apparatus of the present invention will be described with reference to the drawings. Fig. 5 is a schematic configuration diagram of the master disc exposure apparatus. The master exposure device 100 is mainly composed of a fixed optical system 51 including a laser light source (not shown in the figure) and a modulator (not shown in the figure). It is a turntable 52 for rotating the master 10, and a head 53 A drive device 55 that horizontally moves the slide piece 54 on the original disk 10 with high precision to move the clever piece 54 horizontally. A precise auto-focusing device (not shown in the figure) is provided on the slider 54. By moving the slider correctly in the horizontal direction, the grooves or pits can be spirally exposed. The head 53 of the π piece 54 is the first! As shown in the figure, an objective lens 11 for condensing laser light (exposed light) on the original disk 10 and an infrared heater 12 as a heat source for heating the exposed photoresist are provided. Infrared heater 12 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 13 branches with movable support arms. A temperature adjusting device (not shown in the figure) for controlling the temperature is provided inside the support arm 13 to appropriately adjust the temperature of the infrared heating 12. In addition, ^ ^ 1Λ ^ The support arm 13 is provided with a detectable distance = detected :: height sensor (not shown in the figure), and the support arm 13 can be controlled based on the position information detected by the sensory outline. Up or down to adjust the height position of the infrared heater 12. In FIG. 5, the original disk 10 is placed on the turntable. The turntable 52 can be in the μ-scale scale _ t _ χ) __ 8 312129 1233118 A7 _____ B7 V. Description of the invention (9 Clockwise or counterclockwise at any time The number of rotations is rotated. The laser light source set inside the fixed optical system 51 is a 4 times higher laser light with a wavelength of 266 nm and an output of 10 mW. The laser light (exposure light) emitted by the epitaxial light source is composed of The objective lens is focused to the diffraction limit and irradiated on the photoresist formed on the original disk. The method of making the original light by the original disk exposure device is described below. First, a 20 mm quartz glass substrate is prepared and coated on the quartz glass substrate. A positive chemically amplified photoresist with a film thickness of 80 nm was used to make a glass master. Then, the prepared glass master was placed on the turntable 52 of the original disk exposure device 100, and the exposure was performed while rotating the turntable. During exposure The rotation method of the original disk is CLV, and its linear speed is 35 m / s. The temperature of the infrared heater is fixed at 丨 ⑼ □. Using the DC signal as the exposure signal, the slider 54 is horizontally moved by the driving device 55 and performed. The light can form the protrusion and groove part (iand_gr00Ve) in the form of a double spiral with a track pitch of 0.37_. When the exposure light is irradiated from the radius of the original disk to 20mm to 60mm, the infrared heater is activated to heat ( Simultaneous baking) The y photoresist part immediately after the exposure. The exposure of the original disk takes about 2 hours. At the time of exposure, the infrared heater is started from the inner periphery more than a radius of 20mm. After the exposure is completed, the infrared heating is moved to a ratio The outer periphery of the radius is 60mm, so that the time for baking the photoresist by the infrared heater is constant from the innermost periphery to the outermost periphery. Next, the exposed and baked original disk is developed with an alkaline developer. The image dissolves the exposed part by development, leaving only the unexposed part, and _ can be used to make the original disc with the desired concave-convex pattern. For the paper made with this; Degree 312129 1233118 A7
五、發明說明（10) 得之原盤進行SEM觀察時，確認形成有溝槽寬度在18〇nm 至19〇nm程度之突起部與溝形狀部（ian(j-gr〇〇ve)。另外， 溝槽寬度之不均度在5至10%以内。 為做比較，將塗上80nm膜厚之i線用光阻劑所製得 之玻璃基板，用CLV方式，以3.5m/s之速度使之旋轉， 並且以波長λ =351nm之曝光光線進行曝光，以形成和前 述相同尺寸之寬度狹小的溝槽後，經顯像而製成原盤時， 發現溝槽寬度有不均之情況。另外，在以同樣化學增幅型 光阻劑所製成的玻璃基板上，用以往之曝光方法進行曝 光’以形成與前述相同尺寸之溝槽，然後於曝光開始2小 時後’使用加熱機，同樣地加熱（後曝光烘烤）化學增幅型 光阻劑，然後進行顯像，則所製得之原盤上形成之溝槽的 寬度不均度超過10〇/〇。 經 濟 部 % 慧 貝才 產 局 員 工 消 費 合 作 社 印 製 以上，具體說明了本發明之原盤曝光裝置及曝光方 法，但本發明並不限定於此。例如，前述之實施例是以紅 卜線加熱器作為熱源使用，但也可將聚焦控制所用之紅色 雷射當成熱源。此種情況，由於吸收小，所以使用輪出功 率大（例如0 1 W〜程度）之雷射較適合。此時如果作為熱 源來使用之聚焦控制用紅色雷射之點徑過小，則光阻劑之 化學反應時間會變短，所以其點徑須為曝光光線點徑的10 倍以上較為理想。 [發明之功效] 本發明之原盤曝光裝置，由於具備能一邊使原盤上形 成之化學增幅型光阻劑曝光，一邊烘烤曝光部分之熱源，5. Description of the invention (10) When the original disk obtained was observed by SEM, it was confirmed that protrusions and groove-shaped portions (ian (j-gróve)) having a groove width of approximately 180 nm to 19 nm were formed. In addition, The unevenness of the groove width is within 5 to 10%. For comparison, a glass substrate made of a photoresist with an i-line thickness of 80 nm is coated with a CLV method at a speed of 3.5 m / s. When rotating, and exposing with an exposure light with a wavelength of λ = 351nm to form a narrow groove with the same size as the aforementioned, and then developing the original disk after development, uneven groove width was found. In addition, On a glass substrate made of the same chemically amplified photoresist, exposure is performed by a conventional exposure method to form a groove of the same size as the aforementioned, and then 2 hours after the start of exposure, the same heating is performed using a heating machine. (Post-exposure bake) Chemically amplified photoresist, and then developed, the unevenness of the width of the grooves formed on the prepared original disk exceeds 10/0. Ministry of Economic Affairs% Huibei Industry Bureau employee consumption Cooperative printed above The original disc exposure device and exposure method are invented, but the present invention is not limited to this. For example, the aforementioned embodiment uses a red wire heater as a heat source, but a red laser used for focus control can also be used as a heat source. In this case, because the absorption is small, it is more suitable to use a laser with a large output power (for example, 0 1 W ~ degree). At this time, if the point diameter of the red laser for focus control used as a heat source is too small, the photoresist The chemical reaction time will become shorter, so its spot diameter must be more than 10 times the spot diameter of the exposure light. [Effect of the Invention] The original disk exposure device of the present invention is provided with a chemically amplified light that can form on the original disk. Resistor exposure, while baking the heat source of the exposed part,
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經濟部智慧財產局員工消費合作社印槊 五、發明說明（11 ) 因此在原盤上任一半徑位置，其光阻劑從曝光到供烤之經 過時間皆為相同。因此，如使用本發明之曝光震置，可製 造整片皆具有均等尺寸之凹坑及溝槽之原盤。 另外，依本發明之原盤曝光方法，由於係照射曝光光 線，使光阻劑以所希望之圖案曝光，並且加熱經過曝光後 之光阻劑，如此，可省略以往原盤製造步驟中成為另一步 驟之後曝光烘烤之時間，而可提升原盤之生產效率。 [圖面之簡單說明] 第1圖係本發明之原盤曝光裝置的頭部附近概略構成圖。 第2圖係以往正型光阻劑之化學反應的說明。 第3圖係脫保護型之化學增幅型正型光阻劑之化學反 應的說明圖。 第4圖係習知型光阻劑和化學增幅型光阻劑之感光原 理之概略說明圖。 第5圖為本發明之原盤曝光裝置之概略構成圖。 [符號說明] 10原盤 11接物鏡 12紅外線加熱器 13支持臂 51固定光學系統 52轉盤 53頭部 54滑件 100原盤曝光裝置 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, India. 5. Description of the Invention (11) Therefore, the time elapsed from the exposure of the photoresist to baking for any radius on the original disk is the same. Therefore, if the exposure vibration set of the present invention is used, the entire disc can be manufactured with pits and grooves of uniform size throughout. In addition, according to the original disk exposure method of the present invention, since the exposure light is irradiated, the photoresist is exposed in a desired pattern, and the photoresist after the exposure is heated. Thus, the conventional original disk manufacturing step can be omitted and become another step. The exposure and baking time can increase the production efficiency of the original disk. [Brief Description of the Drawings] FIG. 1 is a schematic configuration diagram of the vicinity of the head of the master exposure apparatus of the present invention. Fig. 2 is an illustration of the chemical reaction of a conventional positive photoresist. Fig. 3 is an explanatory diagram of a chemical reaction of a deprotected chemically amplified positive photoresist. Fig. 4 is a schematic illustration of the photosensitive principle of a conventional photoresist and a chemically amplified photoresist. Fig. 5 is a schematic configuration diagram of a master exposure apparatus according to the present invention. [Explanation of symbols] 10 original disk 11 connected to the objective lens 12 infrared heater 13 support arm 51 fixed optical system 52 turntable 53 head 54 slider 100 original disk exposure device This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) )
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