1232601 玖、發明說明： 【發明所屬之技術領域】 本發明係有關於一種藍光發光元件之結構，尤指一種應用多重量子 能障之藍光發光元件。 【先前技術】 按，一般藍光發光元件通常可區分為發光二極體與雷射二極體兩 種。以發光一極體為例，請參閱如第八圖所示，其主要係利用有機氣 相沉積(MOCVD)或者是分子束蠢晶(MBE)的技術。首先必須在藍寶石 基板(sapphire)、碳化矽基板(Sic)或者是矽基板(Si)上依序成長一 ^衝層 (bufei* layei^ —M#udeati()n layef) ' 一 n 型♦推雜的氮 化鎵層、一多重量子井(Multip〗e Quantum Wd〇主動層以及一覆蓋於該 多重量子井主動層上分之P型鎮摻雜(Mg_d〇ped)之氮化鎵層。上述n型 與P型之氮化鎵層並分職上有金屬接點。而雷射二極體與發光二極 體=最大差別在於雷射二極體會於量子井層的上下分別成長週期數目 不定的布拉袼反射層(DBR)。 心，^崎光二鋪其絲層㈣6咖收喊井(wel1)的組 氮化銦鎵(InGaN)，而能障組成份子則為氮化鎵 (aN)。然而，廷樣的組合卻存在著如下之缺點·· 故，二用之發光一極體與雷射二極體，因其結構與組成份子之 故使侍其ϊ子效率較差，且無法有效提升。 來〆二Z二極體會在復盖上P型氮化鎵前先成長氮化鱗(规_ 然而，成長此電伟撞層容易因晶格的不随而 差‘大在=2田由Γ成長氮化轉(A1GaN)的溫度和主動能的溫度 嶋纖多的時間。 針對前述财二極㈣鋪雜驗， 積極尋求解決之道，終於成功 二=冰入W，亚 發光元件。 乍出種應用多重量子能障之藍光 6 1232601 【發明内容】 件，===卿重量子能障之藍光發光元 &曰述目地，本解主要聽於—献上辦絲—緩衝層、-、。曰曰曰、n型咬摻賴氮化鎵層、-具有能障區之多重量子井主 層:成錢再肚-層P魏_之氮轉層，並於n型與 之氮化叙層並分麵±金屬接點，其巾，該能障區係由獅性牡構 組成’材料為氮化鎵系列财化合物半導體，材料由GaN，細，随 AlxGai.xN5 Ιη^,,Ν, AlxIni.xN? AlJn^^N t#f it* ^ 於〇.5一細〜400 nm，成分則是x = R y = w，如此使元件具有^ 能障咼度並且提升藍光發光元件的元件特性。 接下來舉一較佳實施例，同時配合圖式及圖號做進一步之說明，以 使貴審查委員對本發明有更詳盡的瞭解，惟以下所述者僅為用來解 釋本發明之較佳實施例，並非企_以對本發賴任何形式上之限 制，是以，凡有以本發明之創作精神為基礎，而為本發明任何形式的 修飾或變更，皆仍應屬於本發明意圖保護之範疇。 【實施方式】 按’一般之藍光發光元件通常可區分為發光二極體與雷射二極體兩 種，以下茲以發光二極體為例說明本發明。 發光二極體可利用有機氣相沉積(M〇CVD)或是分子束磊晶(Mbe) 的技術，本實施例係由分子束磊晶的技術方面著手，將二極體中之能 P早變更為一形成有高等效能障高度(effective barrier height)之多重量子 月bP早(multi-quantum barrier，MQB)。請參閱如第一圖所示，首先在藍寶 石基板(sapphire)、碳化矽基板(SiC)或者是矽基板(Si)上依序成長一緩衝 層(buffer layer)、一結晶層(nucleation layer)、一 η 型矽摻雜(Si-dopped) 的氮化鎵(GaN)層、一多重量子井(Multiple Quantum well)主動層(active layer)。成長完成後再附上一層p型鎂摻雜(Mg_doped)之氮化鎵層，並 於η型與p型之氮化鎵層並分別鍍上金屬接點。 本實施例與習用發光二極體之最大差別在於本發明之井區(well)係 1232601 由氮化銦鎵(InGaN)所組成，而能障區(]3arrier)則是由氮化鎵(GaN)以及 氮化銦鎵(InGaN)所組成，而非如習用之發光二極體僅單純地使用氮化· 鎵來組成能障區，因此，本實施例之能障區具有高等效能障高度並且 提升元件特性。 為使貴審查員了解本發明之所有特性，茲以下列圖示(實驗數據） 將本發明與習用藍光發光元件之重要特性作比較。 請參閱如第二圖所示，其係為習用本發明於絕對溫度三百度且電流 強度為20mA下之發光頻譜。其中，qW的成分為In〇i5Ga〇85N，S1與 S2分別表示多重量子井能障中InxGaixN中χ含量的不同，其中 S2>S1，而當S1的X值等於零時，S2的X值等於〇〇5。 請參閱如第三圖所示，其係為習用本發明於絕對温度三百度且電流_ 強度為20mA下之發光頻譜。 i請參閱如第四圖所示，其係為本發明S2與習用發光二極體si的 變溫強度比較表，其中，S2即為具有多重量子井(MQB)之藍光發光元 件’由®巾所τττ ’吾人不難得知，在不同的絕對溫度條件下，幻之變 溫強度明顯優於S1之變溫強度。 够閱如弟六圖所示，其係為本發明S2與習用發光二極體si 變溫強度比絲，射，S2即為具有多重量子井(_)之藍光細 件，本圖採用對數座標表示，其目的在於另閱圖者可以輕易了解，1232601 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a structure of a blue light emitting element, and more particularly to a blue light emitting element using multiple quantum energy barriers. [Previous technology] According to the general, blue light emitting elements can generally be divided into two types: light emitting diodes and laser diodes. Take the light-emitting monopole as an example, please refer to the eighth figure, which mainly uses organic vapor deposition (MOCVD) or molecular beam stupid crystal (MBE) technology. First, a ^ bufer * layei ^ —M # udeati () n layef) must be sequentially grown on a sapphire substrate, a silicon carbide substrate (Sic), or a silicon substrate (Si). A heterogeneous gallium nitride layer, a multiple quantum well (Multip e Quantum Wd0) active layer, and a p-type doped (Mg_doped) gallium nitride layer overlying the multiple quantum well active layer. The above n-type and p-type GaN layers have metal contacts on the separation of duties. The biggest difference between laser diodes and light-emitting diodes is that the number of growth cycles of the laser diodes above and below the quantum well layer is different. Indeterminate Brass Reflective Layer (DBR). At the heart, ^ Qi Guang Er plies its silk layer ㈣ 6 coffee receiving well (wel1) group indium gallium nitride (InGaN), and the barrier component is gallium nitride (aN However, the court-like combination has the following disadvantages. Therefore, the two-use light-emitting diodes and laser diodes, due to their structure and components, make them less efficient and cannot Efficient lifting. The Z-diodes will grow nitride scales before they are covered with P-type gallium nitride. The difference does not vary greatly = 2 days from Γ to grow the temperature of nitriding (A1GaN) and the temperature of the active energy to spend a lot of time. In view of the above-mentioned problems of the two poles, actively seek a solution, and finally succeeded. = Ice into W, a sub-light-emitting element. Blue light 6 1232601 with multiple quantum energy barriers is introduced [Content of the invention] === Blue light-emitting element of baryon energy barrier & —Provide a working wire—buffer layer,-, .., said, n-type bite doped GaN layer,-multiple quantum well main layer with energy barrier region: make money again-layer P Wei _ nitrogen transfer layer And the n-type nitrided layer and faceted ± metal contacts. The energy barrier area is composed of lion-like texture. The material is a gallium nitride series compound semiconductor. The material is made of GaN. With AlxGai.xN5 Ιη ^ ,, N, AlxIni.xN? AlJn ^^ N t # f it * ^ is fine to 0.5 ~ 400 nm, the composition is x = R y = w, so that the element has ^ energy And improve the device characteristics of the blue light-emitting element. Next, a preferred embodiment will be given, and further explanation will be given in conjunction with the drawings and numbers to make your review committee Have a more detailed understanding of the present invention, but the following are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, anyone who follows the creative spirit of the present invention As a basis, any form of modification or alteration of the present invention should still fall within the scope of the present invention. [Embodiment] According to the general blue light emitting element, it can be generally divided into a light emitting diode and a laser diode. There are two types. The following describes the present invention by taking a light emitting diode as an example. The light-emitting diode can use the technology of organic vapor deposition (MOCVD) or molecular beam epitaxy (Mbe). This embodiment starts with the technical aspects of molecular beam epitaxy. Change to a multi-quantum barrier bP (MQB) with a high effective barrier height. Please refer to the first figure. Firstly, a buffer layer, a nucleation layer, and a crystalline layer are sequentially grown on a sapphire substrate, a silicon carbide substrate (SiC), or a silicon substrate (Si). An n-type silicon-doped (Si-dopped) gallium nitride (GaN) layer, and a multiple quantum well (active layer). After the growth is completed, a p-type magnesium doped (Mg_doped) gallium nitride layer is attached, and metal contacts are plated on the n-type and p-type gallium nitride layers, respectively. The biggest difference between this embodiment and the conventional light-emitting diodes is that the well system 1232601 of the present invention is composed of indium gallium nitride (InGaN), while the energy barrier region () 3arrier) is made of gallium nitride (GaN) ) And indium gallium nitride (InGaN), instead of the conventional light-emitting diodes, simply use nitride and gallium to form the energy barrier region. Therefore, the energy barrier region of this embodiment has a high efficiency barrier height and Improve component characteristics. In order for your examiner to understand all the characteristics of the present invention, the following diagram (experimental data) is used to compare the important characteristics of the present invention with the conventional blue light-emitting element. Please refer to the second figure, which shows the light emission spectrum of the present invention at an absolute temperature of three Baidu and a current intensity of 20 mA. Among them, the composition of qW is Inoi5Ga85N, S1 and S2 respectively represent the difference in the x content in InxGaixN in the multiple quantum well barrier, where S2 > S1, and when the X value of S1 is equal to zero, the X value of S2 is equal to 0. 〇5. Please refer to the third figure, which is a conventional light emission spectrum of the present invention at an absolute temperature of three Baidu and a current intensity of 20 mA. Please refer to the fourth figure, which is a comparison table of the temperature-varying intensity of S2 and conventional light-emitting diode si of the present invention. Among them, S2 is a blue light-emitting element with multiple quantum wells (MQB). τττ 'It is not difficult for us to know that under different absolute temperature conditions, the temperature change intensity of magic is obviously better than the temperature change intensity of S1. As shown in the sixth figure, it is the temperature-varying intensity ratio of S2 and conventional light-emitting diode si of the present invention. S2 is a blue light detail with multiple quantum wells (_). This figure uses logarithmic coordinates. , The purpose is to make it easy for readers to understand,
=明無論是在低溫或者是高溫的條件下，其變溫強度皆有明顯地提; 明荼閱如第，、與七騎不’其係為本發明& 電性雜比較表，射，S2 „具有多重量子井(mqb)之藍先^ 2 ’猎由第五圖所表現的數據，本發明之電性在 制發光二極體之紐並沒雜大的絲，亦即制了 可以，不改變元件雜的條件下，提升發光二極體之效能。 二極;明’藉由本發明上述的設計，可以有效克服習用發 立麻T 有了人多的優點及實用價值，因此本發明為1 w 土之毛明創作，且在相同的技術領域中未見相同或近似的產品^ 開使用’故本發明已符合發明專獅要件，乃依法提出申請。 【圖式簡單說明】 月 第圖·係、為氮化鱗LED之於絕對溫度三百度電流強度20mA條 下之發光頻譜。 干 第-，·係為氮化銦鎵LED之於絕對溫度二十度電流強度20mA 下之發光頻譜。 个 〒一圖·係為本發明與習用發光二極體變溫強度之比較圖。 第四=·係為本發明與f用發光二極體變溫強度之比較圖。 第五圖：係為本發明與制發光二極體電性特性之比較圖。 f六^ ·係為本發明與制發光二極體電性特性之比較圖。 弟七圖：係為本發明MQB LED之結構示意圖。 第八圖：係為習用LED之結構示意圖。= Ming, whether under low or high temperature conditions, its temperature-varying intensity is obviously improved; Ming Tu reads the first, and Qiqi Bu '' is the present invention & electrical miscellaneous comparison table, shoot, S2 „The blue first ^ 2 with multiple quantum wells (mqb) is based on the data shown in the fifth figure. The electrical properties of the present invention are not made of large filaments, which means that it can be made. Under the condition that the components are not changed, the performance of the light-emitting diode is improved. The above-mentioned design of the present invention can effectively overcome the conventional hair-lime T, which has many advantages and practical values, so the present invention is 1 w Created by Tu Zhimao, and no identical or similar products are found in the same technical field ^ Open to use 'Therefore, the present invention has met the requirements of the invention lion, and the application is submitted in accordance with the law. · Department of light emission spectrum of nitride scale LED under the absolute temperature of three Baidu current intensity of 20mA. Dry--· Department of the light emission spectrum of indium gallium nitride LED under the absolute temperature of 20 degrees and current intensity of 20mA. A single picture is a light emitting diode of the present invention and conventional Comparison chart of temperature-varying intensity. Fourth = · This is a comparison chart of the temperature-change intensity of the light-emitting diodes of the present invention and f. Figure 5: A comparison chart of the electrical characteristics of the present invention and the light-emitting diodes. ^ This is a comparison chart of the electrical characteristics of the present invention and the light-emitting diode. The seventh figure is a schematic diagram of the structure of the MQB LED of the present invention. The eighth diagram is a schematic diagram of the structure of a conventional LED.