TWI230320B - Positive photoresist - Google Patents

Positive photoresist Download PDF

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TWI230320B
TWI230320B TW91105108A TW91105108A TWI230320B TW I230320 B TWI230320 B TW I230320B TW 91105108 A TW91105108 A TW 91105108A TW 91105108 A TW91105108 A TW 91105108A TW I230320 B TWI230320 B TW I230320B
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TW91105108A
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Chi-Sheng Chen
Yan-Cheng Li
Meng-Shiun Jeng
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Everlight Chem Ind Corp
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Abstract

A polymer with structure (II) is disclosed. R1 is H or alkyl (from C1 to C4). R2 is hydroxyl, alkoxy (from C1 to C8), or alkylthio (from C1 to C8). G is (CH2)n, O or S where n=0, 1, 2, 3, or 4. Rc is lactone, m=1, 2, or 3. This polymer is suitable to be a positive photoresist. This polymer can be used at general semiconductor lithography, especially used at 193 nm light wavelength with higher resolution, sharper shape, and higher sensitive.

Description

1230320 A7 一 _ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(丨) 【發明技術領域】 本發明係關於一種光阻劑組成物,尤指一種含有高分 子聚合物之化學增幅光阻劑組成物,以及本發明之化學增 幅光阻劑組成物應用於微影成像之方法。 【發明技術背景】 隨著半導體積體電路之積體層次的快速增加,微影技 術所要求的線幅寬度也越來越小。理論上為使微影製程所 得之圖案解析度更佳,可使用短波長之光源,或數値孔徑 較大的光學系統。 近來曾有一種適用波長193nm光源高分子被發表出 來,它是由四種高分子單體所共聚合而成的高分子共聚合 物’稱為聚 iBMA-MMA-tBMA-MMA ( poly isobornyl methacrylate-methyl methacrylate -t-butyl methacrylate-methacrylic acid ),.其結構如下式: ch3 CH, ?h3 一C)^<ww(CH2—一C)'/ww(CH2一C),/VAW c=o c=o c=o ch31230320 A7 I_ B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (丨) [Technical Field of the Invention] The present invention relates to a photoresist composition, especially a chemically amplified light containing a high molecular polymer A method for applying a resist composition and the chemically amplified photoresist composition of the present invention to lithography imaging. [Background of the Invention] With the rapid increase of the integration level of semiconductor integrated circuits, the line width required by lithography technology is also getting smaller and smaller. Theoretically, in order to make the resolution of the pattern obtained by the lithography process better, a light source with a short wavelength or an optical system with a large aperture can be used. Recently, a polymer with a suitable light source wavelength of 193nm has been published. It is a polymer copolymer polymerized by four kinds of polymer monomers. It is called poly iBMA-MMA-tBMA-MMA (poly isobornyl methacrylate- methyl methacrylate -t-butyl methacrylate-methacrylic acid) ,. Its structure is as follows: ch3 CH,? h3 -C) ^ &w; ww (CH2—C) '/ ww (CH2—C), / VAW c = oc = oc = o ch3

0CH3 c(ch3)3 (請先閱讀背面之注意事項再填寫本頁) .·----0CH3 c (ch3) 3 (Please read the notes on the back before filling this page)

OH 但上述高分子聚合物,具有一些不能令人滿意的地 方°首先是,此由四種高分子單體所共聚合而成高分子聚 合物對於抗蝕刻能力很弱,而且黏著的性質也不好,因此, ^ ί , 訂---------^丨·---------------------- 丨本紙張尺!過用中國國家標準(CNS)A4規格(2]0 x 297户釐) 1230320 經 濟 部 智 慧· 財 產 局 員 工 消 費 合 作 社 印 製OH However, the above-mentioned high-molecular polymers have some unsatisfactory aspects. First, the high-molecular polymers copolymerized by the four kinds of high-molecular monomers have a weak resistance to etching, and their adhesive properties are not good. OK, so, ^ ί, order --------- ^ 丨 · ---------------------- 丨 This paper ruler! Printed by the Chinese National Standard (CNS) A4 (2) 0 x 297 per household 1230320 Printed by the Intellectual Property Corporation of the Ministry of Economic Affairs

本發明《另-目白勺’係在提供一種半導體元件之微影 成像製造方法,特別是193nm的微影成像製造方法, / ,其具 有極佳的解析度、輪廓及感光度。 A7 ----, ___ 五、發明說明(y ) 要將此南分子聚合物應用於光阻劑阻成物,則需要特別 開發出種新的製程。另外美國專利第6,271,412號、第 6’280,898號、第6,3丨6,丨59號以及日本專利公開第 2001-242627號中揭露了多種不同之光阻劑組成,並應用於 半導體積體電路元件的生產。本發明所揭露新穎之光阻劑 組成可同時具有良好的親水性、附著性及抗乾性餘刻等優 越性能,這些優越性能將使光阻劑組成與基材的黏著性增 加,增加光阻劑的成膜性,以及顯影後的光阻圖形較不易 傾倒。另外由於親水性增加,使得顯影液可以均勻分佈在 光阻劑表面,提高光阻圖形表面的均勻性。 本發明之主要目的,係在提供一種化學增幅光阻劑組 成物,此化學增幅光阻劑組成物係應用於在微影成像製 程,其具有極佳的解析度、輪廓及感光度。 本發明之化學增幅光阻劑組成物,其係今有如下式 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 f爱) ·------- —訂--- (請先閱讀背面之注意事項再填寫本頁) i·/· 1230320 A7 五、發明說明(^ ) (II)結構重複單元之高分子聚合物 R1The present invention is to provide a lithographic imaging manufacturing method for semiconductor devices, especially a 193nm lithographic imaging manufacturing method, which has excellent resolution, contour, and sensitivity. A7 ----, ___ 5. Description of the invention (y) To apply this South molecular polymer to photoresist resists, a new process needs to be developed. In addition, U.S. Patent Nos. 6,271,412, 6'280,898, 6,3 丨 6, 丨 59, and Japanese Patent Publication No. 2001-242627 disclose a variety of different photoresist compositions and are used in semiconductor products. Production of bulk circuit components. The novel photoresist composition disclosed in the present invention can simultaneously have excellent properties such as good hydrophilicity, adhesion and resistance to dryness. These superior properties will increase the adhesion of the photoresist composition to the substrate and increase the photoresist. The film-forming property and the photoresist pattern after development are less likely to fall. In addition, due to the increased hydrophilicity, the developing solution can be evenly distributed on the surface of the photoresist, thereby improving the uniformity of the surface of the photoresist pattern. The main object of the present invention is to provide a chemically amplified photoresist composition. The chemically amplified photoresist composition is used in a lithography imaging process and has excellent resolution, contour, and sensitivity. The chemically amplified photoresist composition of the present invention has the following formula. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 f love). ----------- Order --- ( Please read the precautions on the back before filling in this page) i · / · 1230320 A7 V. Description of the invention (^) (II) High molecular polymer R1 with structural repeating unit

Ό 一 〇 R2 (CH2)m Rc (II ) 經濟部智慧財產局員工消費合作社印製 其中R1為Η或CVC4的燒基;R2為經基、Ci-Cs燒氧基或 Ci-Cs烷硫基;G為(CH2)n、氧或硫,其中η為〇〜4的整數; Rc為一内酯基;m為1〜3的整數。 本發明之化學增幅光阻劑組成物,主要包含式(II ) 結構重複單元之高分子聚合物,另外可依實際需要包含有 其他組成份:光酸產生劑(Photo-acid generator,PAG)、酸 捕捉劑(Acid quencher)、添加劍(additive)以及溶劑 (solvent)等等組成份。 本發明之化學增幅光阻劑組成物可以被成熟的應用在 一般的微影成像製程,尤其是193nm的微影成像製^ 並 具有極佳的解析度、輪廓及感光度。微影成像、 1 k方法為 此項技藝人士所熟知,於此不再--贅述。 本發明亦有關前述化學增幅光阻劑組成物 〜谓愿用於半導 ‘紙張尺度適用中國國家標準(CNS)A4規格(210 X 297合釐) (請先閱讀背面之注意事項再填寫本頁) -· H ϋ ϋ ϋ ϋ ϋ 一 δ,· H ϋ ϋ ϋ I ^1 1 I ϋ n ϋ ϋ I ϋ ϋ ϋ I I I H ϋ I ϋ I ϋ ϋ ϋ n ϋ I ϋ . 1230320〇〇R2 (CH2) m Rc (II) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, where R1 is a pyrene or CVC4 alkyl group; R2 is a methyl group, Ci-Cs alkyloxy group, or Ci-Cs alkylthio group G is (CH2) n, oxygen, or sulfur, where η is an integer of 0 to 4; Rc is a lactone group; m is an integer of 1 to 3. The chemically amplified photoresist composition of the present invention mainly includes a high molecular polymer having a structural repeating unit of formula (II), and may further include other components according to actual needs: a photo-acid generator (PAG), The components include an acid quencher, an additive, and a solvent. The chemically amplified photoresist composition of the present invention can be maturely applied to a general lithography imaging process, especially a 193nm lithography imaging system ^, and has excellent resolution, contour, and sensitivity. The lithography and 1k methods are well known to those skilled in the art and will not be repeated here. The present invention is also related to the aforementioned chemically amplified photoresist composition ~ is intended to be used for semiconducting 'paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 heli) (Please read the precautions on the back before filling this page )-· H ϋ ϋ ϋ ϋ ϋ aδ, · H ϋ ϋ ϋ I ^ 1 1 I ϋ n ϋ ϋ I ϋ ϋ H IIIH ϋ I ϋ I ϋ ϋ ϋ n ϋ I ϋ. 1230320

五、發明說明(今) 體70件《微影成像製造方法,特別是微影成像製造方法之 曝光步驟,使用波長為193㈣之光源者。本發明之微影成 像製u方法,具有極佳的解析度、輪廓及感光。 【發明之具體説明】 本發明組成物中含有式(Π)結構重複單元之高分子聚 合物,其係由如下式(I )化合物 R1V. Description of the invention (present) 70 pieces "lithographic imaging manufacturing method, especially the exposure step of the lithographic imaging manufacturing method, using a light source with a wavelength of 193 ㈣. The lithography imaging method of the present invention has excellent resolution, contour, and sensitivity. [Specific description of the invention] The polymer containing a repeating unit of the formula (Π) in the composition of the present invention is composed of the compound R1 of the following formula (I)

(請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 其中R1為Η或CVC4的烷基;R2為羥基、(^-(:8烷氧基或 CVC:8烷硫基;G為(CH2)n、氧或硫,其中η為0〜4的整數; Rc為一内酯基;m為1〜3的整數,在觸媒的存在下進行自 身聚合反應,或與其他含乙晞官能基的不同高分子單體進 行共聚合反應,而製造出的具高分子聚合物。 關於式(I )化合物之製備,可以由如下式方法(步 驟1至步驟5)合成,惟不限於以下方式合成: 本紙張尺度適用中國國家標準(CNS)A4規格(210 Χ 297 $釐)(Please read the notes on the back before filling out this page) The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs prints an alkyl group in which R1 is pyrene or CVC4; R2 is a hydroxyl group, (^-(: 8 alkoxy or CVC: 8 Alkylthio; G is (CH2) n, oxygen or sulfur, where η is an integer from 0 to 4; Rc is a lactone group; m is an integer from 1 to 3, and self-polymerization is performed in the presence of a catalyst, Or it can be copolymerized with other high molecular monomers containing acetamidine functional group to produce a high molecular polymer. With regard to the preparation of the compound of formula (I), the following formula can be used (step 1 to step 5) Synthesis, but not limited to the following methods: This paper size applies to China National Standard (CNS) A4 specifications (210 x 297 $ cent)

f' I · n n ϋ ^OJ· ϋ ϋ I ϋ n I I ϋ ϋ ϋ ϋ I ϋ ϋ ^1 ϋ I 1_1 n ϋ ϋ ϋ ^1 ϋ ϋ ^1 I n ϋ ϋ I 1230320 A7 -------B7___ 五、發明說明(k ) " ~ — ~一 步驟4(step 4)係將步驟3所得之產物在酸性條件下以 適當的親核試劑(例如水、醇類和硫醇類化合物)進行開 環加成反應得到具輕基的衍生物。 步驟5(steP 5)係將步騾4所得之產物再與烷基丙埽酸 氯((alkyl)acryloylchloride)或丙烯醯氯進行酯化反應,即 可得式(I )化合物。 本發明之前述式(I I )光敏性高分子聚合物可以由式 (I )化合物與其他不同的含乙晞官能基高分子單體,在觸媒 存在下行共聚合反應而形成。 前述其他含乙晞官能基的不同高分子單體的選用並沒 有特別的限制;但若為使此高分子聚合物能有可被193nm 之光源穿透的特性,則選用不含芳香族結構之含乙烯官能 基的高分子單體,以使此高分子聚合物能有可被193nm之 光源穿透的特性。其中所述,含乙烯官能基高分子單體, 可列舉如下:(其中R3為Η或C1〜C4的烷基) -·---- (請先閱讀背面之注意事項再填寫本頁) 訂---------線!f 'I · nn ϋ ^ OJ · ϋ ϋ I ϋ n II ϋ ϋ ϋ ϋ I ϋ ϋ ^ 1 ϋ I 1_1 n ϋ ϋ ϋ 1 ϋ ϋ ϋ1 I n ϋ ϋ I 1230320 A7 ------ -B7 ___ V. Description of the invention (k) " ~ ~ ~-Step 4 (step 4) is the product obtained in step 3 under acidic conditions with appropriate nucleophiles (such as water, alcohols and thiol compounds) A ring-opening addition reaction is performed to obtain a derivative having a light group. Step 5 (steP 5) is the esterification reaction of the product obtained in step 4 with (alkyl) acryloylchloride or propylene chloride to obtain the compound of formula (I). The aforementioned photosensitive polymer of the formula (I I) of the present invention can be formed by a copolymerization reaction between the compound of the formula (I) and other different acetamidine-containing polymer monomers in the presence of a catalyst. There are no particular restrictions on the selection of the other different high-molecular monomers containing acetamidine functional groups; however, in order to make this high-molecular polymer capable of being penetrated by a 193nm light source, a non-aromatic structure is selected. A polymer monomer containing an ethylene functional group, so that the polymer can be penetrated by a light source of 193 nm. Among them, the polymer monomers containing ethylene functional groups can be listed as follows: (where R3 is fluorene or C1 ~ C4 alkyl)-· ---- (Please read the precautions on the back before filling this page) Order ---------line!

1230320 A7 Β7 五、發明說明(Ί ) R3 " r3 ' / {ο 〇 〇 fe、 δ R3 、 / R3 /=° 〇 —{ 〇 R3 、 R3 、 R3 >〇 )〇 R3 / > 〇1230320 A7 Β7 V. Description of the invention (Ί) R3 " r3 '/ {ο 〇 〇 fe, δ R3, / R3 / = ° 〇-{〇 R3, R3, R3 > 〇) 〇 R3 / > 〇

〇 〇〇 〇

(請先閱讀背面之注意事項再填寫本頁) _·---- ch2oh c〇2h(Please read the notes on the back before filling this page) _ · ---- ch2oh c〇2h

HOHO

Ο 經濟部智慧財產局員工消費合作社印製 由式(i)化合物,可以藉由自身聚合反應或共聚合反 應合成含有如式(II)結構重複單元之高分子聚合物:〇 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Compounds of formula (i) can be synthesized by self-polymerization or copolymerization reactions to polymer polymers containing repeating units of formula (II):

一°J· ϋ n I in ϋ in an I 1 ϋ l ·ϋ n ϋ ϋ ϋ ϋ ^1 ^1 n ·ϋ ϋ ^1 ϋ n i^i 1.1 I 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 &釐) ί /·3· 1230320 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(X)R11 ° J · ϋ n I in ϋ in an I 1 ϋ l · ϋ n ϋ ϋ ϋ ϋ ^ 1 ^ 1 n · ϋ ϋ ^ 1 ϋ ni ^ i 1.1 I This paper size applies to China National Standard (CNS) A4 (210 X 297 & li) ί / · 3 · 1230320 A7 B7 Printed by the Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of Invention (X) R1

(II ) 其中R1、R2、G、Rc及m之定義如前所述。 式(I )化合物,可自身或搭配一或數種其它含乙烯 官能基的高分子單體,聚合製造出高分子聚合物,其中較 佳者可列舉如下列式(III )、式(IV)或式(V )之高分子 聚合物:(II) wherein R1, R2, G, Rc, and m are as defined above. The compound of formula (I) can be polymerized by itself or in combination with one or more other high molecular monomers containing ethylene functional groups to produce a high molecular polymer. Among them, the preferred ones include the following formula (III), formula (IV) Or high molecular polymer of formula (V):

本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 ) (請先閱讀背面之注意事項再填寫本頁) ! · n n ϋ ϋ ϋ n H 一5、1 ϋ I I I ϋ ϋ ϋ I I ϋ ϋ I ϋ ϋ ϋ n ϋ I I I ϋ ϋ H ϋ I ϋ ϋ i ϋ ϋ ϋ . 1230320This paper size applies to Chinese National Standard (CNS) A4 (210 X 297) (Please read the precautions on the back before filling out this page)! · Nn ϋ ϋ H n H-5, 1 ϋ III ϋ ϋ ϋ II ϋ ϋ I ϋ ϋ ϋ n ϋ III ϋ ϋ H ϋ I ϋ ϋ i ϋ ϋ ϋ.

RR

'、中R尺、尺分別為氫或甲基,且g+h+i =i戋 g+h+1+j=1;更佳的係為其中 g/(g+h+i)=0.01 至 0.5、’h/ (g+h+1)=(M 至 〇.5、i/( g+h+i)=〇 i 至 〇 5,或 (㈣則) =0.01 至 0_5、h/ ( g+h+i+i ) —n !本 n < w / 、δ n 1十J 卜0·1 至 〇·5、"( g+h+i+j ) =〇」 至0.5,以及j/ ( g+h+i+j卜〇」至〇 5 〇 上述的高分子聚合物可以被單獨、兩個或兩個以上混 合使用。 本發明所使用之鬲分子聚合物,較佳的,其係可溶於 有機溶劑,且玻璃轉移溫度Tg介於50至22(rc之間,分 子量介於1000至500000之間,分解溫度Td大於8〇〇c。 本發明所使用之咼分子聚合物的合成方法,並無特殊 限制,較佳為藉由混合上述高分子單體,並在觸媒起始劑 存在下起聚合反應。觸媒起始劑可為熟習此項技藝者所習 用之觸媒起始劑,但較佳之觸媒起始劑為2,2,_偶氮雙異丁 基月青(2,2’-azo-bis-isobutyronitrile; AIBN )或二甲基 2,2,-偶氮雙異丁基酯自由基起始劑 本紙張尺度過用中國國家標準(CNS)A4規格(21〇 x 297 &爱)', The middle R ruler and ruler are hydrogen or methyl, and g + h + i = i 戋 g + h + 1 + j = 1; more preferably, where g / (g + h + i) = 0.01 To 0.5, 'h / (g + h + 1) = (M to 0.5, i / (g + h + i) = 〇i to 〇5, or (rule) = 0.01 to 0_5, h / ( g + h + i + i) —n! Ben n < w /, δ n 1 10 J 0 0 to 1 · 5, " (g + h + i + j) = 0 ″ to 0.5, and j / (g + h + i + j 〇 ″ to 〇 5 〇 The above-mentioned polymer can be used alone, two or more than two mixed. The fluorene molecular polymer used in the present invention is preferably, It is soluble in organic solvents, and has a glass transition temperature Tg between 50 and 22 (rc, a molecular weight between 1,000 and 500,000, and a decomposition temperature Td greater than 800c. The fluorene molecular polymer used in the present invention The synthesis method is not particularly limited, and it is preferred to mix the above polymer monomers and polymerize in the presence of a catalyst initiator. The catalyst initiator can be used by those skilled in the art. Catalyst, but the preferred catalyst initiator is 2,2'-azo-bis-isobutyronitrile (2,2'-azo-bis-isobutyronitrile; AIBN) or dimethyl 2,2 , -Azobisisobutyl ester radical initiator This paper has been oversized using Chinese National Standard (CNS) A4 specifications (21 × 297 & Love)

經濟部智慧財產局員工消費合作社印製 1230320 A7 B7 五、發明說明(1。) (dimethyl_2,2,_azo-bis-isobutyrate radical initiator ; V-601 ) 〇 本發明之化學增幅光阻劑組成物,包含式(II )結構 重複單元之高分子聚合物,以及其他組成份例如光酸產生 劑(Photo_acid generator, PAG)、酸捕捉劑(Acid quencher)、添加劑(additive)以及溶劑(solvent)。 本發明所使用之光酸產生劑並無特別限制,只要以紫 外線等輻射現照射能產生酸即可,其他的基本要求,係能 在曝光前具有一定程度的穩定性,以避免影響到製程的可 靠性。較佳的光酸產生劑可為: (請先閱讀背面之注意事項再填寫本頁) ------- 丨訂---------線I -----------------------Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1230320 A7 B7 V. Description of the invention (1.) (dimethyl_2,2, _azo-bis-isobutyrate radical initiator; V-601) 〇 The chemically amplified photoresist composition of the present invention, A high-molecular polymer including structural repeating units of formula (II), and other components such as a photo acid generator (PAG), an acid quencher, an additive, and a solvent. The photoacid generator used in the present invention is not particularly limited, as long as the current can be generated by irradiation with ultraviolet rays or other radiation. Other basic requirements are that it can have a certain degree of stability before exposure to avoid affecting the process. reliability. The better photoacid generator can be: (Please read the precautions on the back before filling in this page) ------- 丨 Order --------- Line I ------- ----------------

CM s C8 03 經濟部智慧財產局員工消費合作社印製CM s C8 03 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

:9S〇a: 9S〇a

π3 cπ3 c

1230320 A7 B7 經濟部智慧財產局員工消費合作社印製1230320 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

(請先閱讀背面之注意事項再填寫本頁) €.(Please read the notes on the back before filling this page) €.

一 1· I >^1 ·1 I 1 II I I I ϋ n a^i ·ϋ I ϋ ϋ ϋ ϋ ϋ n ϋ 1 ^1 ϋ (ϋ ϋ ^1 ϋ I 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 2971 · I > ^ 1 · 1 I 1 II III ϋ na ^ i · ϋ I ϋ ϋ ϋ ϋ ϋ n ϋ 1 ^ 1 ϋ (ϋ ϋ ^ 1 ϋ I This paper standard applies to China National Standard (CNS) A4 Specifications (210 x 297

五、發明說明( 1230320 上述的光酸產生劑可以被單獨、兩個或兩個以上混合 使用。在100份的樹脂重量下,光酸產生劑的添加量可以 在0.1到20份,又較佳的添加量為0·5到7份(此處所有 的比例係以重量計算)。 本發明之酸捕捉劑,是為了可調整光阻中PAg所產生 性離子之擴散特性’而使光阻的特性更好。適用於本發 明之較佳酸捕捉劑為: 氫氧化四丁铵(tetrabutylammonium hydroxide)、乳酸 根四 丁銨鹽(tetrabutylammonium lactate)、三丁胺 (tributylamine)、三辛胺(trioctylamine)、三乙醇胺 (triethanolamine)、三[2-(2-甲氧乙氧)乙基]胺 (tris[2-(2-methoxyethoxy)ethyl]amine)、N_(2,3-二羥丙基) 基)六氣口比症(N-(2-hydroxyethyl)piperidine)、嗎林 (morpholin)、N_(2-羥乙基)嗎林 (N_(2-hydroxyethyl)morpholin )、Ν_(2·羥乙基)口比咯啶 (N_(2_hydroxyethyl)pyir〇lidine ),或 Ν-(2-羥乙基)口比井 啶(N-(2-hydroxyethyl)piperazine )等。酸捕捉劑的添加量 可以是光酸產生劑的0.001到10份,又較佳的添加量為每 份光酸產生劑的0·01到1份(此處所有的比例係以重量計 算)° 本發明之添加劑並無特殊之限制,可隨意地,是否加 入適量的增感劑(sensitizers)、溶解抑制劑(dissolution inhibitors)、介面活性劑(surfactants)、安定劑(stabilizers)、 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製V. Description of the invention (1230320 The photoacid generator mentioned above can be used alone, two or more of them can be mixed. Under 100 parts of resin weight, the amount of photoacid generator can be 0.1 to 20 parts, which is better. The addition amount is 0.5 to 7 parts (all ratios here are calculated by weight). The acid trapping agent of the present invention is used to adjust the diffusion characteristics of the sexual ions generated by PAg in the photoresist to make the photoresist. Better characteristics. The preferred acid trapping agents suitable for the present invention are: tetrabutylammonium hydroxide, tetrabutylammonium lactate, tributylamine, trioctylamine , Triethanolamine, tri [2- (2-methoxyethoxy) ethyl] amine, tris [2- (2-methoxyethoxy) ethyl] amine, N_ (2,3-dihydroxypropyl) group ) Six-mouth-to-mouth syndrome (N- (2-hydroxyethyl) piperidine), morpholin, N_ (2-hydroxyethyl) morpholin, N_ (2-hydroxyethyl) N- (2-hydroxyethyl) pyirolidine, or N- (2-hydroxyethyl) N- (2-hydroxyethy l) piperazine) and so on. The addition amount of the acid trapping agent may be 0.001 to 10 parts of the photoacid generator, and the preferable addition amount is 0.01 to 1 part per part of the photoacid generator (all proportions herein are calculated by weight) ° The additives of the present invention are not particularly limited, and can optionally be added with appropriate amounts of sensitizers, dissolution inhibitors, surfactants, stabilizers, and paper size. Applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling out this page)

-' «III — — — — 一-01 I I I I — I I I I I I I I I I I I ^ I I I ^ 勝通^ I 1230320 五、發明說明( 染料(dyes)和其他樹脂,使得光阻劑能達㈣需的要求。 I I tr 線 用於製造本發明之化學増幅光阻劑組成物的溶劑無特 殊限制,列舉如高級醇(例如:正辛醇)、乙二醇酸之醋類 何生物(例如:乳酸曱醋、乳酸乙酉旨或乙醇酸乙醋)、乙二 醇醚《酉旨類衍生物(例如:乙二醇乙酸乙酸醋、乙二醇甲 醚乙酸醋或丙二醇單曱酸乙酸酯)、酉同醋(例如:丙酉同酸甲 醋或丙酮酸乙酯)、燒氧基叛酸@旨(例如:2_乙氧基乙酸乙 酯、3-甲氧基丙酸甲g旨、3_乙氧基丙酸乙醋或乙氧基丙酸甲 酯)、酮衍生物(例如:甲基乙基酮、甲基戊基甲酮、乙醯 丙酮、環戊酮、環己酮或2_庚酮)、酮醚衍生物(例如:雙 丙酮醇甲醚)、酮醇衍生物(例如:㈣醇或雙丙酮)、醇 鍵衍生物(例如:乙二醇丁醚或丙二醇乙驗)、酿胺衍生物 (例如:二甲基乙醯胺或二甲基甲醯胺)、醚衍生物(例如: 苯曱醚或二甘醇二甲醚)或其混合物。其中以正辛醇、丙 二醇單甲醚乙酸醋、2_乙氧基乙酸乙酯、3_甲氧基丙酸甲 酯、乙氧基丙酸甲酯、甲基乙基酮、甲基戊基甲酮、環戊 酮、乳酸甲醋、乳酸乙酯、乙二醇丁醚、丙二醇乙酸或其 混合物作為主要組份的溶劑較佳。 適當的溶劑重量為每100份的樹脂重量,添加溶劑2〇〇 到2000份,又較佳的添加量為400到1000份(此處所有 的比例係以重量計算)。 本發明之化學增幅光阻劑組成物係藉由混合上述組成 份而得。可以先將上述之高分子聚合物溶解於溶劑中,再 混入其他組成份◦或者先將除高分子聚合物之外的其他組 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 g釐-'«III — — — — I-01 IIII — IIIIIIIIIIII ^ III ^ Shengtong ^ I 1230320 V. Description of the invention (dyes and other resins, making the photoresist to meet the required requirements. II tr line use There are no particular restrictions on the solvents used in the manufacture of the chemically-based photoresist composition of the present invention. Examples include higher alcohols (eg, n-octanol), vinegars such as glycolic acid (eg, lactic acid, vinegar, ethyl lactate, or Ethyl glycolate), Glycol ethers, "German derivatives (for example: ethylene glycol acetate acetic acid, ethylene glycol methyl ether acetate or propylene glycol monoacetate acetate), isopropyl vinegar (for example: propyl (E.g. methyl vinegar or ethyl pyruvate), oxybenzoic acid @purpose (for example: ethyl 2-ethoxyacetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate Vinegar or methyl ethoxypropionate), ketone derivatives (for example: methyl ethyl ketone, methyl amyl ketone, acetoacetone, cyclopentanone, cyclohexanone or 2-heptanone), keto ethers Derivatives (for example: diacetone methyl ether), keto alcohol derivatives (for example, methanol or diacetone), alcohol bond derivatives For example: Ethylene glycol butyl ether or propylene glycol), amine derivatives (for example: dimethylacetamide or dimethylformamide), ether derivatives (for example: anisole or diglyme Ether) or a mixture thereof, among which n-octanol, propylene glycol monomethyl ether acetate, ethyl 2-ethoxyacetate, methyl 3-methoxypropionate, methyl ethoxypropionate, methyl ethyl Ketones, methylpentyl ketones, cyclopentanone, methyl lactate, ethyl lactate, ethylene glycol butyl ether, propylene glycol acetic acid, or mixtures thereof are preferred as the solvent for the main component. A suitable solvent weight is 100 parts by weight. Resin weight, 200 to 2000 parts of solvent is added, and 400 to 1000 parts is more preferable (all proportions are calculated by weight). The chemically amplified photoresist composition of the present invention is obtained by mixing the above It can be obtained by dissolving the above-mentioned high-molecular polymer in a solvent, and then mixing other components. Or the other papers except the high-molecular polymer can be used in accordance with Chinese National Standard (CNS) A4. (210 X 297 g centimeters

五、發明說明(J 1230320 成份混合並溶解於溶劑中,然後再混入高分子聚合物。 化學增幅光阻劑組成物所含之雜質(例如:微量的金 屬及卣素)量應儘可能降低,各組成份在混合以製得化學 增幅光阻劑組成物之前,可以先施以純化改善純度。或者 各組成份可以先混合製得化學増幅光阻劑組成物,然後在 使用前再施以純化。 本發明 < 化學增幅光阻劑組成物,可以被成熟的應用 在一般的微影成像製程,較特別是,本發明之化學增幅光 阻劑組成物,除可被應用於一般傳統波長光線的微影成像 製程以外,還可以被應用於193nm光線的微影成像製程。 本發明之化學增幅光阻劑組成物利用習知的方法即可 以形成圖樣。如先將化學增幅光阻劑組成物塗覆於基材 上,繼而施以曝光、顯影等步驟。 基材可以是硬晶片或者具有多種材料,塗覆可以利用 諸如轉塗法、噴塗法或滾塗法等方法實施。基材在塗覆之 後,通常會置於加熱板上加熱,以去除溶劑,繼而經光罩 施以曝光’以在基材上形成所需要的圖樣。 顯像液可以選用如氨水、三乙基胺、二甲基胺甲醇、 氫氧化四甲銨、氫氧化鈉、氫氧化钾、碳酸鈉、碳酸钾或 氲乳化二甲基喪乙基錢等之驗性水溶液。 本發明之化學增幅光阻劑組成物具有極佳的解析度、 輪廓及感光度,並且在聚焦深度、曝光邊界與移除邊界上 有很優異的表現。 為能更瞭解本發明之技術内容,特舉較佳之具體實施 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -··------- —1T—^—線 ----------------------- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 1230320 A7 B7 五、發明說明(6 例説明如下。 【發明的較佳實施例】 製備例1 :高分子單體 (Ι·1)的合成 0V. Description of the invention (J 1230320 The components are mixed and dissolved in the solvent, and then mixed into the polymer. The amount of impurities (such as trace metals and halogens) contained in the chemically amplified photoresist composition should be reduced as much as possible. Before mixing the components to obtain a chemically amplified photoresist composition, purification can be applied to improve the purity. Alternatively, the components can be mixed to obtain a chemically amplified photoresist composition, and then purified before use. The present invention < chemically amplified photoresist composition can be maturely used in general lithography imaging processes, and more particularly, the chemically amplified photoresist composition of the present invention can be applied to general traditional wavelength light except In addition to the lithographic imaging process of lithography, it can also be applied to the lithographic imaging process of 193nm light. The chemically amplified photoresist composition of the present invention can be patterned using conventional methods. For example, the chemically amplified photoresist composition Coating on the substrate, followed by steps of exposure, development, etc. The substrate can be a hard wafer or have a variety of materials, and the coating can be applied by, for example, transfer coating , Spraying method or roll coating method. After the substrate is coated, it is usually placed on a hot plate to remove the solvent, and then exposed through a photomask to form the desired pattern on the substrate. The imaging solution can be selected from ammonia, triethylamine, dimethylamine, methanol, tetramethylammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, or dimethyl emulsified dimethyl ethyl acetate. The chemically amplified photoresist composition of the present invention has excellent resolution, profile, and sensitivity, and has excellent performance in the depth of focus, exposure boundary, and removal boundary. In order to better understand the present invention The technical content, especially the better specific implementation (please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy-·· ------- —1T — ^ — 线- ---------------------- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 1230320 A7 B7 V. Description of invention (6 examples are explained below) [Preferred Embodiment of the Invention] Preparation Example 1: Synthesis of Polymer Monomer (I · 1) 0

Η+ ChUOhTΗ + ChUOhT

Methacryloyl chloride CH2CI2 / Et3N 〇Methacryloyl chloride CH2CI2 / Et3N 〇

經濟部智慧財產局員工消費合作社印製 將16.6克的8,9-環氧-3-酮-4-氧-參環[5.2.1.〇2’6]癸烷 溶於200毫升甲醇中,並加入濃硫酸0.25ml,待反應完全 後將溶液中和,迴旋濃縮後,加入200毫升二氯甲烷和10.2 克的三乙基胺(triethyl amine),然後再加入10.5克的甲基 丙晞醯氯(methacryloyl chloride),攪拌至反應完全。過滤 並迴旋濃縮後,以色層分析法分離,可得淡黃色油狀液體 產物9-甲氧基-5-酮-4-氧-參環[5·2·1 ·02,6]癸-8-基甲基丙晞 酉旨(9-methoxy-5-oxo-4-oxa-tricyclo[5.2.1.02,6]dec-8-yl methacrylate) (I_l) 18.9 克(產率:75%)。經光譜鑑定: h-NMR (CDC13,300MHz) d 5.89 (1H,brs)、5.37 (1H,brs)、4.81(lH,m)、3.96(lH, m)、3·67_3·57 (2H,m)、3·54 (3H,s)、2.79 (1H,m)、2·57 (1H,m)、2.55 (1H,m)、2.37 (1H,m)、1·77-1.74 (4H, m)、1 ·38 (1Η,m) 〇 13C-NMR ( CDC13,75MHz) cM71.4、165.6、136.0、124.8、84.9、79.5、70.0、51.0、 (請先閱讀背面之注意事項再填寫本頁) -··--------tr---- ά/φ---------------------- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 2971|釐) 1230320 A7 一 _____JB7_ 五、發明說明(|b) 46.1、45·7、40.4、39.1、32.4、17.8 製備例2 :高分子單體 (Ι·2)的合成 〇 Η+Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 16.6 g of 8,9-epoxy-3-one-4-oxo-sancycline [5.2.1.〇2'6] decane was dissolved in 200 ml of methanol. 0.25 ml of concentrated sulfuric acid was added. After the reaction was completed, the solution was neutralized. After concentrating, 200 ml of dichloromethane and 10.2 g of triethyl amine were added, and then 10.5 g of methyl propane was added. Chlorine (methacryloyl chloride), stir until the reaction is complete. After filtration and cycloconcentration, it was separated by chromatographic analysis to obtain 9-methoxy-5-one-4-oxo-reference ring [5 · 2 · 1 · 02,6] dec- 9-methoxy-5-oxo-4-oxa-tricyclo [5.2.1.02,6] dec-8-yl methacrylate) (1-1) 18.9 g (yield: 75%). Spectral identification: h-NMR (CDC13, 300MHz) d 5.89 (1H, brs), 5.37 (1H, brs), 4.81 (lH, m), 3.96 (lH, m), 3.67_3 · 57 (2H, m ), 3.54 (3H, s), 2.79 (1H, m), 2.57 (1H, m), 2.55 (1H, m), 2.37 (1H, m), 1.77-1.74 (4H, m ), 1.38 (1Η, m) 〇13C-NMR (CDC13, 75MHz) cM71.4, 165.6, 136.0, 124.8, 84.9, 79.5, 70.0, 51.0, (Please read the precautions on the back before filling this page) -·· -------- tr ---- ά / φ ---------------------- This paper size applies to Chinese National Standards (CNS ) A4 specification (210 x 2971 | centi) 1230320 A7 _____JB7_ V. Description of the invention (| b) 46.1, 45 · 7, 40.4, 39.1, 32.4, 17.8 Preparation Example 2: Polymer monomer (I · 2) Synthesis 〇Η +

_ acryloyl chloride CH3OH CH2CI2 / Et3N 〇_ acryloyl chloride CH3OH CH2CI2 / Et3N 〇

(1-2) 經濟部智慧財產局員工消費合作社印製 將l6·6克的8,9·環氧-3-酮-4-氧-參環[5·2·1·〇2,0]癸嫁 溶於200毫升甲醇中,並加入濃硫酸〇.25ml,待反應完全 後將溶液中和,迴旋濃縮後,加入200毫升二氯甲烷和10·2 克的三乙基胺(triethyl amine),然後再加入9.1克的丙烯 醯氯(acryloyl chloride),攪拌至反應完全。過滤並迴旋濃 縮後,以色層分析法分離,可得淡黃色油狀液體產物9_甲 氧基-5-酮-4-氧參環[5·2_1·02,6]癸-8-基甲基丙烯酯 (9-methoxy-5-oxo-4-oxa-tricyclo[5.2.1.02,6]dec-8-yl acrylate) (1-2) 18.9 克(產率:75%)。經光譜鑑定: j-NMR (CDC13,300MHz,J in Hz) β 6·38 (1H,dd,J=17.4, 0.6)、6·11 (1H,dd,】=17·4,iq 5)、 5·82 (1H,dd,J=10.5,0.56)、5.01 (1H,brs)、4」7 (ipj, d,J=5.0)、3.86 (1H,d,J=5.6)、3.79 (1H,dd,J=5 6, 2.7)、3.72 (3H,s)、2·95 (1H,m)、2.81 (1H,m)、2.73 (ijj, m)、2.56 (1H,brs)、1.95 (1H,d,J=10.9) 、1.57 (iH,d, J=10.9) 〇 (請先閱讀背面之注意事項再填寫本頁) —肇--------訂----(1-2) The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed 16.6 grams of 8,9 · epoxy-3-one-4-oxo-shen ring [5 · 2 · 1 · 〇2,0] Decanoate was dissolved in 200 ml of methanol, and 0.25 ml of concentrated sulfuric acid was added. After the reaction was completed, the solution was neutralized. After concentrating, 200 ml of dichloromethane and 10.2 g of triethyl amine were added Then, add 9.1 g of acrylyl chloride and stir until the reaction is complete. After filtration and cycloconcentration, separation by chromatographic analysis, a light yellow oily liquid product, 9_methoxy-5-one-4-oxanacycline [5 · 2_1 · 02,6] dec-8-yl, was obtained. 18.9 g (9-methoxy-5-oxo-4-oxa-tricyclo [5.2.1.02,6] dec-8-yl acrylate) (1-2) (yield: 75%). Spectral identification: j-NMR (CDC13, 300MHz, J in Hz) β 6 · 38 (1H, dd, J = 17.4, 0.6), 6 · 11 (1H, dd,] = 17 · 4, iq 5), 5.82 (1H, dd, J = 10.5, 0.56), 5.01 (1H, brs), 4 ″ 7 (ipj, d, J = 5.0), 3.86 (1H, d, J = 5.6), 3.79 (1H, dd, J = 56, 2.7), 3.72 (3H, s), 2.95 (1H, m), 2.81 (1H, m), 2.73 (ijj, m), 2.56 (1H, brs), 1.95 (1H , D, J = 10.9), 1.57 (iH, d, J = 10.9) 〇 (Please read the precautions on the back before filling this page) — Zhao -------- Order ----

線— _----------------------- A7 1230320 五、發明說明(1 13C-NMR ( CDCI3,75MHz) d 171·9、165.0、130·7、128.6、85.4、80.0、70.5、51.6 46.7、46.2、40.8、39.6、32.9 〇 製備例3 :高分子單體 的合成 Η+ 重複實施例2之步驟,改以3,4-環氧_7-酮-8-氧-雙環 [4.3.0]i)fe(3,4-epoxy-7-oxo-8-oxa-bicyclo[4.3.0]nonane) 取代8,9-環氧-3-酮-4-氧-參環[5.2.1.02,6]癸烷 (8,9-epoxy-3-oxo-4-oxa-tricyclo[5.2.1.〇2,6]decane)為起始 物,並以無水乙醇取代甲醇為溶劑進行反應,則可得無色 油狀液體產物4-乙氧基-9-酮-8-氧-雙環[4.3.0]壬-3-基丙烯 酯(4-ethoxy-9-oxo-8-oxa-bicycl〇[4.3.0]non-3-yl acrylate) (1-3)。經光譜鑑定: W-NMR (CDC13,300MHz,J in Hz) β 6·28 (1H’ dd’ J= 17.4’ 1.8)、5.99 (1H,dd,J= 17.4, 10.6)、 5.75 (1H ’ dd,J=10.6,1.8)、4.91 (1H,brs)、4.11 (1H, m)、3.85 (1H,m)、3·5 8 (1H,m)、3·44 (1H,m)、3·22 (1H, m)、2.61-2.47 (2H,m)、2·25 (1H,m)、1.91-1.72 (2H,m)、 1·09_0·97 (5H,m) 〇 13C-NMR ( CDCI3,75MHz) I本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297 @7 (請先閱讀背面之注意事項再填寫本頁)Line — _----------------------- A7 1230320 V. Description of the invention (1 13C-NMR (CDCI3, 75MHz) d 171 · 9, 165.0, 130 · 7, 128.6, 85.4, 80.0, 70.5, 51.6 46.7, 46.2, 40.8, 39.6, 32.9 〇 Preparation Example 3: Synthesis of polymer monomer Η + Repeat the procedure of Example 2 and change to 3,4-epoxy 7-keto-8-oxy-bicyclo [4.3.0] i) fe (3,4-epoxy-7-oxo-8-oxa-bicyclo [4.3.0] nonane) replaces 8,9-epoxy-3- Keto-4-oxo-reference ring [5.2.1.02,6] decane (8,9-epoxy-3-oxo-4-oxa-tricyclo [5.2.1.〇2,6] decane) as the starting material, And using anhydrous ethanol instead of methanol as the solvent to carry out the reaction, a colorless oily liquid product 4-ethoxy-9-one-8-oxy-bicyclo [4.3.0] non-3-ylpropene ester (4-ethoxy -9-oxo-8-oxa-bicycl0 [4.3.0] non-3-yl acrylate) (1-3). Spectral identification: W-NMR (CDC13, 300MHz, J in Hz) β 6 · 28 (1H 'dd' J = 17.4 '1.8), 5.99 (1H, dd, J = 17.4, 10.6), 5.75 (1H' dd , J = 10.6, 1.8), 4.91 (1H, brs), 4.11 (1H, m), 3.85 (1H, m), 3 · 5 8 (1H, m), 3.44 (1H, m), 3 · 22 (1H, m), 2.61-2.47 (2H, m), 2.25 (1H, m), 1.91-1.72 (2H, m), 1.09_0 · 97 (5H, m) 〇13C-NMR (CDCI3 , 75MHz) I This paper size is applicable to China National Standard (CNS) A4 (210 x 297 @ 7 (Please read the precautions on the back before filling this page)

Ο acryloyl chloride C2H5〇ri CH2CI2/Et3NΟ acryloyl chloride C2H5〇ri CH2CI2 / Et3N

ΟΟ

訂--- 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 11 I ---------------------- 1230320 A7 B7 五、發明說明(θ) 〇Μ71·6、164.7、130.9、128.0、71.2、70.8、69.2、63.8、 35.7、30·3、25_1、20.7、14.9。 製備例4〜7 重複製備例1之步騾,改以不同之起始物及溶劑進行 反應,其結果如表Α所示, 表A _ 起始物 溶劑 產物Order --- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 11 I ---------------------- 1230320 A7 B7 V. Description of the Invention (θ) 〇71 -6, 164.7, 130.9, 128.0, 71.2, 70.8, 69.2, 63.8, 35.7, 30 · 3, 25_1, 20.7, 14.9. Preparation Examples 4 to 7 The steps in Preparation Example 1 were repeated, and the reaction was performed with different starting materials and solvents. The results are shown in Table A. Table A _ Starting Material Solvent Product

、本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 &釐 (請先閱讀背面之注意事項再填寫本頁) --------訂·--- 1-4、 This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 & centimeters (please read the precautions on the back before filling this page) -------- Order · --- 1-4

1-6 經濟部智慧財產局員工消費合作社印製 1230320 A7 五、發明說明(彳) B71-6 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1230320 A7 V. Description of Invention (彳) B7

經濟部智慧財產局員工消費合作社印製 製備例8 高分子聚合物式(II - 1 )的合成 在反應器中加入四氫口夫喃20毫升、第三丁基甲基 丙晞酯(tert-butyl methacrylate) 2.13 克、2_ 甲基-2-金剛燒 基甲基丙浠酯(2_methyl_2-adamantyl methacrylate) 4.69 克和9-甲氧基-5(或3)-酮-4-氧·參環[5·2·1·02,6]癸-8-基甲 基丙浠酯(9-methoxy-5 (or 3) -oxo-4,oxa-tricyclo [5·2· 1 ·02,6] dec_8-yl methacrylate) 3_99 克,然後再加入起始 劑2,2’-偶氮雙異丁基(AIBN) 1.1克,並升溫至65至70 °C,反應完全後加入四氫口夫喃20毫升,然後將反應所 得產物倒入裝有1升己之容器中,使產生白色固體沉澱, 經過濾乾燥,可得到如下式(II -1 )之高分子聚合物白色 粉末8.43克,產率78%,以GPC量測,重量平均分子量 14,100,玻璃轉移溫度Tg二169。(:。 (請先閱讀背面之注意事項再填寫本頁) 張尺度適用中國國家標準(CNS)A4規格(210 X 297 -*·------- — 訂---------^ I AW----------------------- 1230320 A7 B7 五、發明說明(,) CH〇 CH3 CH,Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Preparation Example 8 Synthesis of high molecular polymer type (II-1). 20 ml of tetrahydrobuffan and tert-butyl methacrylate were added to the reactor. ) 2.13 g, 2-methyl-2-adamantyl methacrylate (2_methyl_2-adamantyl methacrylate) 4.69 g, and 9-methoxy-5 (or 3) -one-4-oxo · ring ring [5 · 2 · 1 · 02,6] dec-8-ylmethylpropanyl ester (9-methoxy-5 (or 3) -oxo-4, oxa-tricyclo [5 · 2 · 1 · 02,6] dec_8-yl methacrylate) 3_99 g, and then add 1.1 g of 2,2'-azobisisobutyl (AIBN) as the starter, and raise the temperature to 65 to 70 ° C. After the reaction is complete, add 20 ml of tetrahydrofuran The reaction product was poured into a container filled with 1 liter of hexane to cause precipitation of a white solid. After filtration and drying, 8.43 g of a high molecular polymer white powder with the following formula (II-1) was obtained, with a yield of 78%. GPC measurement, weight average molecular weight 14,100, glass transition temperature Tg two 169. (:. (Please read the notes on the back before filling out this page) Zhang scale is applicable to China National Standard (CNS) A4 specifications (210 X 297-* · ------- — Order ------- -^ I AW ----------------------- 1230320 A7 B7 V. Description of the invention (,) CH〇CH3 CH,

式(II _ 1 ) ϋ *^1 ·ϋ n ϋ n i^i ϋ I · n i an (請先閱讀背面之注意事項再填寫本頁) 【g=0.30, h=0.40, i=0.30, Mw=14100] 製備例9 高分子聚合物式(II - 2 )的合成 在反應器中加入四氫口夫喃20毫升、第三丁基甲基丙 烯酉旨(tert-butyl methacrylate) 2· 1 3 克、8_ 甲基參環 [5.2.1.02,6]癸-8-基甲基丙烯酯(8-methyltricyclo [5·2· 1 ·02’6] deca-8-yl methacrylate) 4·69克和 4-乙氧基 -7(或9)-酮-8-氧_雙環[4.3.0]壬-3_基甲基丙晞酯 (4-ethoxy-7(or 9)-oxo-8-oxa-bicyclo[4.3.0]non-3-yl methacrylate) 4.02克,然後再加入起始劑2,2,-偶氮雙異丁 - 2 經濟部智慧財產局員工消費合作社印製1·. 基1 · 1克,並升溫至70°C,反應至隔夜後加入四氫口夫喃 2 0毫升’然後將上述所得反應產物倒入裝有1升己燒之容器 中,使產生白色固體沉澱,經過濾乾燥,可得到如下式(π -2)之高分子聚合物白色粉末6·83克,產率63 %,以Gpc 量測,重量平均分子量19,200,玻璃轉移溫度Tg=l2rc。(II _ 1) ϋ * ^ 1 · ϋ n ϋ ni ^ i ϋ I · ni an (Please read the notes on the back before filling in this page) [g = 0.30, h = 0.40, i = 0.30, Mw = 14100] Preparation Example 9 Synthesis of high molecular formula (II-2) In the reactor, 20 ml of tetrahydrofuran and tert-butyl methacrylate 2 · 1 3 g, 8_ Methyl reference ring [5.2.1.02,6] dec-8-yl methacrylate (8-methyltricyclo [5 · 2 · 1 · 02'6] deca-8-yl methacrylate) 4.69 g and 4-ethyl Oxy-7 (or 9) -one-8-oxy_bicyclo [4.3.0] non-3_ylmethylpropanyl ester (4-ethoxy-7 (or 9) -oxo-8-oxa-bicyclo [ 4.3.0] non-3-yl methacrylate) 4.02 g, then add the starter 2,2, -azobisisobutyl- 2 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. · Base 1 · 1 g , And the temperature was raised to 70 ° C, and after reaction overnight, 20 ml of tetrahydrofuran was added, and then the reaction product obtained above was poured into a container filled with 1 liter of sintered, so that a white solid precipitated, which was dried by filtration, 6.83 g white polymer powder of the following formula (π -2) can be obtained with a yield of 63%, measured by Gpc. An average molecular weight of 19,200, a glass transition temperature Tg = l2rc.

1230320 A7 B7 五、發明說明(d ) ch3 ch31230320 A7 B7 V. Description of the invention (d) ch3 ch3

〇 式(Π-2) 【g=0.30, h=0.40, i=0.305 Mw=19200] 製備例10〜34 重複實施例1之步騾,改以不同之單體進行聚合’可 得白色粉末之高分子聚合物,合成結果如下式(11 -3 )至 式(11-27)所示,〇 Formula (Π-2) [g = 0.30, h = 0.40, i = 0.305 Mw = 19200] Preparation Examples 10 to 34 Repeat step 1 of Example 1 and use different monomers to polymerize to obtain white powder. Polymer, the synthesis results are shown in the following formula (11-3) to formula (11-27),

〇 式(II _3 ) 【g=0.30,h=0.40,i=0.3( Mw=l6200 】 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製〇 Formula (II _3) [g = 0.30, h = 0.40, i = 0.3 (Mw = l6200] (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

式(II -4 ) 【g=0.30, h=0.40,i=0.3丨 Mw=18700](II -4) [g = 0.30, h = 0.40, i = 0.3 丨 Mw = 18700]

· n H ϋ n ϋ ϋ. 一S^J· m ϋ n ϋ —ϋ I I -- - - ϋ ϋ ϋ I ϋ 1 - ϋ li- I n I -- ϋ -1 ϋ - I— I 私紙張尺度適用中國國家標準(CNS)A4規格(210 x 297 1230320 A7 B7 五、發明說明(>^ ) ch3 ch3· N H ϋ n ϋ ϋ. 一 S ^ J · m ϋ n ϋ —ϋ II---ϋ ϋ ϋ I ϋ 1-ϋ li- I n I-ϋ -1 ϋ-I— I Private paper scale Applicable to China National Standard (CNS) A4 specification (210 x 297 1230320 A7 B7 V. Description of the invention (> ^) ch3 ch3

ο 式(II -5 ) 【g=0_30,h=0.40,i = 0.30 Mw=17300]ο Formula (II -5) [g = 0_30, h = 0.40, i = 0.30 Mw = 17300]

式(II _6 ) 【g=0.30, h=0.40,i=0.30, Mw=15400] (請先閱讀背面之注意事項再填寫本頁) CH3(II _6) [g = 0.30, h = 0.40, i = 0.30, Mw = 15400] (Please read the precautions on the back before filling this page) CH3

〇 式(II _7 ) 【g=0.30, h=0.40, i=0.30, Mw=14600] 經濟部智慧財產局員工消費合作社印製Γ ch3 ch3〇 Formula (II_7) [g = 0.30, h = 0.40, i = 0.30, Mw = 14600] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy Γ ch3 ch3

式(II -8 ) 【g==0.50,h=0.10,i=0.40 Mw=l 0200 】 *tr----- -----線 ι·----------------------- 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 釐) 1230320 A7 B7 五、發明說明(/)Formula (II -8) [g == 0.50, h = 0.10, i = 0.40 Mw = l 0200] * tr ----- ----- line ι · ----------- ------------ This paper size applies to China National Standard (CNS) A4 (210 x centimeter) 1230320 A7 B7 V. Description of the invention (/)

OC2H5 式(II _9 ) [g=0.50, h=0」0, i=0.40, Mw=9700]OC2H5 formula (II _9) [g = 0.50, h = 0 ″ 0, i = 0.40, Mw = 9700]

〇 式(II-10) [g=0.50, h=0.10, i=0.40 Mw=11600] (請先閱讀背面之注意事項再填寫本頁) .♦· .tri 經濟部智慧財產局員工消費合作社印製〇 Formula (II-10) [g = 0.50, h = 0.10, i = 0.40 Mw = 11600] (Please read the precautions on the back before filling out this page). system

〇 式(π-ll ) [g=0.50,h=0.10,i=0.40, Mw=11500] 式(II-12) [g=0.50,h=0.10,i=0_40, Mw=9300】 -線丨-^^---------------------- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X ^釐) 1230320 A7 五、發明說明(4) ch3 ch3 ch3〇 Formula (π-ll) [g = 0.50, h = 0.10, i = 0.40, Mw = 11500] Formula (II-12) [g = 0.50, h = 0.10, i = 0_40, Mw = 9300]-line 丨-^^ ---------------------- This paper size applies to China National Standard (CNS) A4 (210 X ^ centimeter) 1230320 A7 V. Description of the invention ( 4) ch3 ch3 ch3

〇 B7 式(11-13 ) [g=0.50, h=0.10, i = 0.40, Mw=8700]〇 B7 formula (11-13) [g = 0.50, h = 0.10, i = 0.40, Mw = 8700]

式(11-14) [g=0.05,h=0.30,i = 0.40, j = 0_25, Mw=10500】 (請先閱讀背面之注意事項再填寫本頁) Φ CH3 ch3(11-14) [g = 0.05, h = 0.30, i = 0.40, j = 0_25, Mw = 10500] (Please read the precautions on the back before filling this page) Φ CH3 ch3

經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

HO P〇2H5 式(II-15) 【g=0.05,h=0_30, i=0.40, j = 0.25, Mw=13300】 式(II_16) [g=0.05, h=0.30, i = 0.40, j=0.25, Mw=12600】HO P〇2H5 Formula (II-15) [g = 0.05, h = 0_30, i = 0.40, j = 0.25, Mw = 13300] Formula (II_16) [g = 0.05, h = 0.30, i = 0.40, j = 0.25, Mw = 12600]

* 一SOI » i^i n ϋ I I ϋ ^1 ί I ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ^1 ^1 I I ϋ I I 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 公釐) 1230320 A7 B7 五、發明說明(〆) Cl-b CH3 CK3 Cl-b* One SOI »i ^ in ϋ II ϋ ^ 1 ί I ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ϋ ^ 1 ^ 1 II 本 II This paper size applies to China National Standard (CNS) A4 (210 x mm) 1230320 A7 B7 V. Description of the invention (〆) Cl-b CH3 CK3 Cl-b

式(π_17) [g=0.05,h=0_30,i=0.40 j=0.25, Mw=9500】Equation (π_17) [g = 0.05, h = 0_30, i = 0.40 j = 0.25, Mw = 9500]

PH 式(II_18) [g=0.05,h=0.30,i=0.40, j = 0.25, Mw=11100】 (請先閱讀背面之注意事項再填寫本頁) CH CH3 CH;PH formula (II_18) [g = 0.05, h = 0.30, i = 0.40, j = 0.25, Mw = 11100] (Please read the precautions on the back before filling this page) CH CH3 CH;

O ,OCH3 式(II_19) [§=0.05,h=0.30, i=0.40, j = 0.25, Mw=11700】O, OCH3 formula (II_19) [§ = 0.05, h = 0.30, i = 0.40, j = 0.25, Mw = 11700]

........... 7 經濟部智慧財產局員工消費合作社印製ί·3........... 7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3

HO pCH3 式(II -20 ) 【g=0.05,h=0.40,i=0.30, j=0.25,Mw=10800】 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 公釐) I · n I ϋ ·ϋ ϋ ϋ I 一 · ϋ ^1 ϋ ϋ ^1 ϋ ϋ I ϋ ϋ ϋ 1· ϋ ϋ ϋ ί I ϋ ^1 ϋ ϋ ϋ ϋ I ϋ ϋ >.1 H ^1 ϋ n . 1230320 A7 B7 五、發明說明(〆〇HO pCH3 formula (II -20) [g = 0.05, h = 0.40, i = 0.30, j = 0.25, Mw = 10800] This paper size applies to China National Standard (CNS) A4 (210 x mm) I · n I ϋ · ϋ ϋ ϋ I I · ϋ ^ 1 ϋ ϋ ^ 1 ϋ ϋ I ϋ ϋ ϋ 1 · ϋ ϋ ϋ I ϋ ^ 1 ϋ ϋ ϋ ϋ I ϋ ϋ > .1 H ^ 1 ϋ n. 1230320 A7 B7 V. Description of the invention (〆〇

〇 式( II-21 ) 【g=0.05, h=0.40,i=0.30, j = 0.25, Mw=9600】 式(11-22 ) [g=0.05,h=0.40,i = 0.30, j=0.25, Mw=9900】 (請先閱讀背面之注意事項再填寫本頁)〇 Formula (II-21) [g = 0.05, h = 0.40, i = 0.30, j = 0.25, Mw = 9600] Formula (11-22) [g = 0.05, h = 0.40, i = 0.30, j = 0.25 , Mw = 9900] (Please read the precautions on the back before filling this page)

Chb ChbChb Chb

式(II -23 ) [g=0.05,h=0.40,i=0.30 j=0.25, Mw=10500】 I I.-- -- I -I------ - - δ 3 經濟部智慧財產局員工消費合作社印製rFormula (II -23) [g = 0.05, h = 0.40, i = 0.30 j = 0.25, Mw = 10500] I I .---I -I --------δ 3 Intellectual property of the Ministry of Economic Affairs Printed by Bureau employee consumer cooperative

〇 本紙張尺度適用中國國家標準(CNS)A4規格(210 x @7公釐) 一 δι · ϋ ϋ ϋ I I I ϋ ϋ —ϋ ϋ ϋ ί I ϋ a^i ϋ ϋ n in I I ϋ n - 1230320〇 This paper size applies the Chinese National Standard (CNS) A4 specification (210 x @ 7mm)-δι · ϋ ϋ ϋ I I I ϋ ϋ —ϋ ϋ ϋ ί I ϋ a ^ i ϋ in n in I I ϋ n-1230320

、發明說明(β)Description of the invention (β)

式(II ·26 ) 【g=0.05,h=0.40,i=0.45, j=0.10? Mw=13400] 式(11-27) 【g=0.05,h=0.40,i=0.45, j= 0.10, Mw=1 1700】 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 實施例1、光阻劑組成物配方 將製備例8所得到之式(Η - 1 )高分子聚合物2克、 一丰基硫離子全氣-1-丁燒績酸酯(triphenyl sulfonium perfluoro_l-butanesul fonate ; TPS-PFBS ) 0·05 克和三級丁 基膽酯(tert -butyl cholate ; TBC ) 0.06 克、丙二醇單甲基Formula (II · 26) [g = 0.05, h = 0.40, i = 0.45, j = 0.10? Mw = 13400] Formula (11-27) [g = 0.05, h = 0.40, i = 0.45, j = 0.10, Mw = 1 1700] (Please read the precautions on the back before filling this page) Example 1 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs and the photoresist composition formula (Η-1 ) 2 g of high molecular polymer, triphenyl sulfonium perfluoro-1-butanesul fonate (TPS-PFBS), 0.05 g and tert-butyl cholate; TBC) 0.06 g, propylene glycol monomethyl

本紙張尺度適用中國國家標準(CNS)A4規格(210 X ^$7公釐) A A .·«1 ^1 ϋ 1- ·1 ϋ^aJβ ΜΗ MB·! ea Μ» 騰 線— .----------------------- 1230320 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(J) 醚乙酸酉旨(propylene glycol monomethyl ether acetate ; PGMEA )10.4克和N-(羥基甲基)六氫口比啶(N-( hydroxy methyl ) piperidine ) 0·5毫克混合均勻,然後以0·45μιη的 過濾器過濾此溶液後,將此溶液塗覆在一矽乾薄片上,再 以2800rpm的旋轉塗覆30秒,可得一均勻薄膜。 然後將此薄膜在130°C下乾燥90秒,可得306.7 nm厚 膜。再以193nm照射能量10〜30mj/cm2的深紫外線(DUV ) 照射此薄膜後,將此乾薄片在一 130°C的熱板上加熱90秒。 再以 2.38% 氫氧化四甲铵(tetramethyl ammonium hydroxide ; TMAH )水溶液,顯像此經照射薄膜,經去離 子水洗滌後,旋轉乾燥,以電子顯微鏡掃描分析此光阻劑 的結構,顯示具有0.15 μιη的解析度結構。 實施例2〜1 6、光阻劑組成物配方 重複實施例一之步驟,改以製備例9〜15、21〜27以及 3 1所得到之高分子聚合物取代實施例一之高分子聚合物, 其結果如下表Β所示: nf---- (請先閱讀背面之注意事項再填寫本頁) 訂 ——1-----線—0 表Β 高分子聚合 物 薄膜厚(nm) 解析度(μηι) 實施例2 (II - 2 ) 317.8 0.18 實施例3 (II - 3 ) 326.0 0.18 本紙張尺度適用中國國家標準(CNS〉A4規格(2〗0 X Μ?今声) 1230320 五、發明說明(d) A7 B7 實施例4 (II - 4 ) 298.5 0.15 實施例5 ( II- 5) 278.8 0.15 實施例6 (II - 6 ) 321.0 0.15 實施例7 (II - 7 ) 306.8 0.18 實施例8 (II - 8 ) 304.5 0.15 實施例9 (11-14) 320.7 0.20 實施例10 (II-15) 334.9 0.20 實施例11 (II - 16 ) 310.2 0.15 實施例12 (II-17) 296.6 0.15 實施例13 (II - 18 ) 275.8 0.15 實施例14 (II-19) 330.5 0.18 實施例15 (11-20) 309.7 0.15 實施例16 (II - 24 ) 318.5 0.20 丨·--------^---7 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製This paper size applies to China National Standard (CNS) A4 (210 X ^ $ 7 mm) AA. · «1 ^ 1 ϋ 1- · 1 ϋ ^ aJβ ΜΗ MB ·! Ea Μ» Tengxian — .---- ------------------- 1230320 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (J) propylene glycol monomethyl ether acetate; PGMEA) 10.4 g and N- (hydroxymethyl) piperidine 0.5 mg, mix well, and then filter this solution with a filter of 0.45 μm, then apply this solution Cover a silicon dry sheet and spin-coat at 2800 rpm for 30 seconds to obtain a uniform film. This film was then dried at 130 ° C for 90 seconds to obtain a 306.7 nm thick film. After the film was irradiated with deep ultraviolet (DUV) at an energy of 10 to 30 mj / cm2 at 193 nm, the dry sheet was heated on a hot plate at 130 ° C for 90 seconds. Then, a 2.38% tetramethyl ammonium hydroxide (TMAH) aqueous solution was used to visualize the irradiated film, washed with deionized water, spin-dried, and scanned and analyzed the structure of the photoresist with an electron microscope. μιη resolution structure. Examples 2 to 16. 6. The photoresist composition formula was repeated as described in Example 1. The polymer obtained in Preparation Examples 9 to 15, 21 to 27, and 31 was used instead of the polymer in Example 1. The results are shown in the following table B: nf ---- (Please read the precautions on the back before filling in this page) Order——1 ----- line—0 Table B Thickness of polymer film (nm) Resolution (μηι) Example 2 (II-2) 317.8 0.18 Example 3 (II-3) 326.0 0.18 This paper size is applicable to Chinese national standards (CNS> A4 specification (2〗 0 X Μ? Today) 1230320 V. Description of the Invention (d) A7 B7 Example 4 (II-4) 298.5 0.15 Example 5 (II-5) 278.8 0.15 Example 6 (II-6) 321.0 0.15 Example 7 (II-7) 306.8 0.18 Example 8 (II-8) 304.5 0.15 Example 9 (11-14) 320.7 0.20 Example 10 (II-15) 334.9 0.20 Example 11 (II-16) 310.2 0.15 Example 12 (II-17) 296.6 0.15 Example 13 (II-18) 275.8 0.15 Example 14 (II-19) 330.5 0.18 Example 15 (11-20) 309.7 0.15 Example 16 (II-24) 318.5 0.20 丨 -------- ^- -7 (Please Read the back of the precautions to fill out this page) Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed

AP 本發明之化學增幅光阻劑組成物可以被成熟的應用在 一般的微影成像製程,尤其是193nm的微影成像製程,並 具有極佳的解析度、輪廓及感光度。 综上所陳,本發明無論就目的、手段及功效,在在均 顯示其迥異於習知技術之特徵,惟應注意的是,上述諸多 實施例僅係為了便於説明而舉例而已,本發明所主張之權 利範圍自應以申請專利範圍所述為準,而非僅限於上述實 施例。 適用中國國家標準(CNS)A4規格(210 x 297 ) 細 I I I ----------------------AP The chemically amplified photoresist composition of the present invention can be maturely applied to general lithography imaging processes, especially 193nm lithography imaging processes, and has excellent resolution, contour, and sensitivity. In summary, the present invention, regardless of its purpose, means, and effect, shows its characteristics that are quite different from the conventional technology. However, it should be noted that many of the above-mentioned embodiments are merely examples for the convenience of explanation. The scope of the claimed rights should be based on the scope of the patent application, rather than being limited to the above embodiments. Applicable to China National Standard (CNS) A4 specification (210 x 297) Fine I I I ----------------------

Claims (1)

1230320 A8 BS C8 D8 六、申請專利範圍6. 如申請專利範圍第1項之組成物,其中G為氧或硫。 7. 如申請專利範圍第1項之組成物,其中該高分子聚合物係 為如下式(Π-1)、(Π-2)、(Π·3)、(Π·4)、(Π-5)、 (Π - 6 ),或(Π - 7 ): ch31230320 A8 BS C8 D8 6. Scope of Patent Application 6. For the composition of the scope of patent application item 1, G is oxygen or sulfur. 7. For example, the composition of claim 1 in the scope of patent application, wherein the high molecular polymer is the following formula (Π-1), (Π-2), (Π · 3), (Π · 4), (Π- 5), (Π-6), or (Π-7): ch3 〇 式(π CH〇 Formula (π CH 經濟部智慧財產局員工消货合作社印封Seal of the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 〇 式(Π - 2 〇〇 Formula (Π-2 〇 〇 式(Π-〇 Formula (Π- 本紙張尺庋適用中0 S家標準(CNS)A4規格(210 X 29^公发〉 1230320 A8 B3 C8 D8 六、申請專利範圍 CH3 CH3 CH3 經濟部智慧財產局員工消货合作社印^^The size of this paper is applicable to 0S Standards (CNS) A4 (210 X 29 ^ Public issued) 1230320 A8 B3 C8 D8 VI. Application for patents (請先閱讀背面之注意事項再填寫本頁) !% 再填寫夫 -------訂-----1----線 --------------r------------ 本紙張尺度適周中0國家標準(CNS)A4規柊(210 X 2於5公发) 1230320 Αδ BS C8 D8 12),或(Π - 13): ch3 ch3 ch.(Please read the notes on the back before filling out this page)!% Then fill in the husband ------- order ----- 1 ---- line ------------- -r ------------ The size of this paper is 0 National Standard (CNS) A4 Regulation (210 X 2 to 5 issued) 1230320 Αδ BS C8 D8 12), or (Π- 13): ch3 ch3 ch. PCH3 六、申請專利範圍 其中 g+h+i=l。 8. 如申請專利範圍第7項之組成物,其中g/ ( g+h+i )二0.01 至 0.5、h/ ( g+h+i) =0·1 至 0.5,以及 i/ ( g+h+i) =0.1 至 0.5。 9. 如申請專利範圍第1項之組成物,其中該高分子聚合物係 為如下式(Π - 8)、( Π - 9)、( Π 10)、( Π - 11 )、( Π - 式(Π - 8) 先 Μ 讀 背 面 之 注 意 事 項 m 本· 頁I w I I I I 訂 CH3 ch3PCH3 6. Scope of patent application Where g + h + i = 1. 8. If the composition of the scope of application for item 7 of the patent, wherein g / (g + h + i) 0.01 to 0.5, h / (g + h + i) = 0.1 to 0.5, and i / (g + h + i) = 0.1 to 0.5. 9. The composition of item 1 in the scope of patent application, wherein the polymer is the following formula (Π-8), (Π-9), (Π 10), (Π-11), (Π- (Π-8) First, read the precautions on the back, this book · page I w IIII order CH3 ch3 線 經濟部智慧財產局員工消货合作社印liLine Consumer Goods Cooperative Association of the Intellectual Property Bureau of the Ministry of Economic Affairs 式(Π - 9) 〇 本紙張尺度適闬中0國家標準(CNS)A4規格(210><2#公犮了 1230320 A8B3C8D8 六、申請專利範圍 CH,Formula (Π-9) 〇 The paper size is suitable for 0 national standard (CNS) A4 specifications (210 > < 2 # publicly available 1230320 A8B3C8D8 VI. Patent application scope CH, 〇 式(Π - 10〇 Formula (Π-10 〇 式(Π - 11) 式(Π - 12 閱 讀 背 面 之 注 意 事 項書瓤 本1 頁I ^ I I I I訂 線 經濟部智慧財產局員工消货合作社印封〇 Formula (Π-11) Formula (Π-12 Read the note on the back side of the book 瓤 This page 1 I ^ I I I I LINE Sealed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 〇 式(Π - 13 本紙張尺度適闬中0舀家標準(CNS)A4規袼(210x2於/公发了 1230320 A8 B3 C8 D8 六、申請專利範圍 其中 g + h + i = 1。 10·如申請專利範圍第9項之組成物,其中g/ ( g+h+i ) =0·01 至 0.5、h/ ( g+h+i) =0.1 至 0·5,以及 i/ ( g+h+i)二0.1 至 0_5。 1 1 ·如申請專利範圍第1項之組成物,其中該高分子聚合 物係為如下式(Π - 1.4)、( Π - 15)、( Π - 16)、(. Π- 17)、 (Π - 18),或(Π 19) ·· 先 Μ 讀 背 面 之 注 意 事 項 m 本1 頁I 經濟部智慧財產局員工消货合作社印^^〇 Formula (Π-13 This paper is suitable for the standard of the Chinese Standard (CNS) A4 (210x2 in / issued 1230320 A8 B3 C8 D8) 6. Application scope of patents where g + h + i = 1. 10 · For example, the composition of the 9th patent application scope, where g / (g + h + i) = 0.01 to 0.5, h / (g + h + i) = 0.1 to 0.5, and i / (g + h + i) two 0.1 to 0_5. 1 1 As the composition of the first scope of the patent application, wherein the high molecular polymer is the following formula (Π-1.4), (Π-15), (Π-16) , (. Π-17), (Π-18), or (Π19) ·· Please read the notes on the back of this page m Page 1 of this page I Printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^^ 式(Π - 14 式(Π 15 〇 I I I訂 線 本紙張尺度適用中0舀家標準(CNS)A4規格(210 X 29^公发) 1230320 A8 B8 CS D8 六、申cl*專利義圍Formula (Π-14 Formula (Π 15 〇 I I I Alignment) The paper size is applicable to the standard of China Standard (CNS) A4 (210 X 29 ^ public) 1230320 A8 B8 CS D8 6. Apply for the patent * 式(Π- 16) CH3 ch3 ch(Π- 16) CH3 ch3 ch 式(Π - 17 請 先 Μ 讀 背 面 之 注 意 事 項着議 本广 頁 訂 ch3 ch3 ch3(Π-17 Please read the notes on the back first, the discussion of this book, page order ch3 ch3 ch3 式(Π _ 18) 線 經濟部智慧財產局員工消货合作社印^i CH3 CH3 ch3(Π _ 18) Line Printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economy ^ i CH3 CH3 ch3 HO 式(Π- 19) 本紙張尺度適用中0國家標準(CNS)A4規格(210 x 2#公发) 1230320 r\〇 B8 C8 D8 六、申請專利範圍 其中 g+h+i + j:=i。 1 2·如申請專利範圍第11項之組成物,其中g/ ( g+h+i + j ) = 〇·〇1 至 0.5、h/ ( g+h+i + j) =0.1 至 0·5、i/ ( g+h+i + j) = 〇.l 至 0·5,以及 j/ ( g+h+i + j) =〇·1 至 0.5。 13·如申請專利範圍第1項之組成物,其中該高分子聚合物 係為如下式(Π - 20)、( Π - 21)、( Π - 22),或(Π - 23):HO formula (Π-19) This paper size is applicable to 0 National Standards (CNS) A4 specifications (210 x 2 # public hair) 1230320 r \ 〇B8 C8 D8 Six, the scope of patent application where g + h + i + j: = i. 1 2 · As for the composition in the 11th scope of the patent application, where g / (g + h + i + j) = 〇 · 〇1 to 0.5, h / (g + h + i + j) = 0.1 to 0 · 5. i / (g + h + i + j) = 0.1 to 0.5, and j / (g + h + i + j) = 0.1 to 0.5. 13. The composition according to item 1 of the scope of patent application, wherein the high molecular polymer is the following formula (Π-20), (Π-21), (Π-22), or (Π-23): 式(Π- 20) 〇(Π- 20) 〇 pC2H5 式(Π - 21 經濟部智慧財產局員工消费合作社印製pC2H5 (Π-21 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 格 A4 S) N (C 準 標 家 國 0 中 用 適 & 尺 張 紙 本 ¾ 公 X ο 1230320 A8B3C8D8 六、申請專利範圍 ch3 ch3 ch3 ch3Grid A4 S) N (C quasi-standard country 0 suitable & rule paper ¾ male X ο 1230320 A8B3C8D8 VI. Patent application scope ch3 ch3 ch3 ch3 CH3 CH3 CH3 CH3CH3 CH3 CH3 CH3 經濟部智慧財產局員工消费合作社印li 其中 g+h+i + j= l。 14. 如申請專利範圍第13項之組成物,其中g/ ( g+h+i + j ) 峨01 至 0.5、h/ ( g+h+i +j) =0.1 至 0.5、i/ ( g+h+i +j ) = 0.1 至 0.5,以及 j/ ( g+h+i + j) =0.1 至 0·5。 15. 如申請專利範圍第1項之組成物,其中該高分子聚合物 係為如下式(Π - 24 )、( Π - 25 )、( Π - 26 ),或(Π - 27 ): 本紙張尺度適用中國舀家標準(CNS)A4規袼(210 X 2#公犮了 1230320 A8B8C8D8 六、申請專利範圍 CH,Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs print li where g + h + i + j = l. 14. For the composition of the scope of application for item 13, where g / (g + h + i + j) E01 to 0.5, h / (g + h + i + j) = 0.1 to 0.5, i / (g + h + i + j) = 0.1 to 0.5, and j / (g + h + i + j) = 0.1 to 0.5. 15. If the composition of the scope of application for item 1 of the patent, wherein the high molecular polymer is the following formula (Π-24), (Π-25), (Π-26), or (Π-27): this paper Standards are applicable to China National Standards (CNS) A4 regulations (210 X 2 # publicly available 1230320 A8B8C8D8) 6. Scope of patent application CH, 5 2H C Π -------------·%,--- (請先閱讀背面之注意事項再填寫本頁) 訂· C 經濟部智慧財產局員工消货合作社印製5 2H C Π ------------- ·%, --- (Please read the notes on the back before filling out this page) Order C Printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Π式 Π式 -線- 本紙張尺度適闬中0國家標準(CNS)A4規格(210 X 2私公发) A8SC8D8 1230320 、申請專利範圍 ’、中 g+h+i + j= l。 1 6·如申凊專利範圍第15項之組成物,其中g/ ( g+h+i + j ) 〇.〇 1 至 〇·5、h/ ( g+h+i + j) =〇.l 至 〇·5、i/ ( g+h+i + j ) 二0·1 2 至 0.5,以及 j/ ( g+h+i + j) =〇.l 至 0.5。 17·如申請專利範圍第1項之組成物,其中該高分子聚合物 可’谷於有機溶劑,且玻璃轉移溫度Tg介於50至220。(:之 間,分子量介於1000至500000之間,分解溫度Td大於8〇 °C。 經濟部智慧財產局員工消费合作社印封Π type Π type -line-The paper size is suitable for the 0 national standard (CNS) A4 specification (210 X 2 private release) A8SC8D8 1230320, the scope of patent application ', medium g + h + i + j = l. 16. The composition of item 15 in the scope of the patent application, wherein g / (g + h + i + j) 0.001 to 0.5, h / (g + h + i + j) = 〇. 1 to 0.5, i / (g + h + i + j), 0.21 to 0.5, and j / (g + h + i + j) = 0.1 to 0.5. 17. The composition according to item 1 of the patent application range, wherein the high molecular polymer can be 'organic solvent' and the glass transition temperature Tg is between 50 and 220. (In between, the molecular weight is between 1,000 and 500,000, and the decomposition temperature Td is greater than 80 ° C. Sealed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 8·如申巧專利範圍第1項之組成物,其中該光酸產生劑係 2 為: 1230320 A8 B8 C8 D8 六、申請專利範圍 經濟部智慧財產局員工消费合作社印製1 8. The composition in item 1 of Shenqiao's patent scope, where the photoacid generator 2 is: 1230320 A8 B8 C8 D8 6. Scope of patent application Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 本紙張尺度適用中0國家標準(CNS)A4規格(210 X 2於公犮1 六、申請專利範圍This paper size applies to 0 National Standard (CNS) A4 specifications (210 X 2 to public money 1) 6. Scope of patent application 0 No 0 ii ir μ F3C-S-C-S--CF3 〇 〇 19. 如申請專利範圍第18項之組成物,其中光酸產生劑的重 量可以是每1〇〇份的樹脂重量下,添加〇1到2〇份。 〇 〇 II 〇一S II 〇 20. 如申請專利範圍第旧之組成物,#中更包括酸捕捉劑 (Add quencher),該酸捕捉劑係為氫氧化四丁銨 (tetrabutylammonium hydroxide)、乳酸根四 丁銨鹽 (tetrabutylammonium lactate)、三丁胺(tributylamine)、 三辛胺(trioctylamine)、三乙醇胺(triethan〇lamine)、三 [2-(2-曱氧乙氧)乙基]胺 經濟部智慧財產局員工消货合作社印封 (tris[2-(2-methoxyethoxy)ethyl]amine)、N-(2,3-二羥丙基) 六氫口比 ϋ定(N-(2,3-dihydroxypropyl)piperidine)、N-(2-經乙基)六氫口 比 °定(N-(2-hydroxyethyl)piperidine )、嗎 林(morpholin)、N-(2-經乙基)嗎林 (N-(2-hydroxyethyl)morpholin )、N-(2-經乙基)口比口各口定 (N-(2-hydroxyethyl)pyrrolidine),或 N-(2_經乙基)口比 口井 口定(N-(2-hydroxyethyl)piperazine )。 本紙張尺度適用中0國家標準(CNS)A4規柊(210 X ) 經濟部智慧財產局員工消费合作社印製 1230320 D8 六、申請專利範圍 2 1.如申請專利範圍第20項之組成物,其中酸捕捉劑的添加 量可以是每份光酸產生劑的0.001到10份。 本紙張尺度適3中國國家標準(CNS)A4規柊(210 X ) 12薦ρ8號 93年2月修正頁 A7 B7 夺J9 η 93. 2. 27 W^\補充10 No 0 ii ir μ F3C-SCS--CF3 〇〇19. If the composition of the scope of patent application No. 18, wherein the weight of the photoacid generator can be added per 100,000 parts of the resin weight, add 0 to 20 servings. 〇〇II 〇 一 S II 〇20. For example, the oldest composition in the scope of patent application, # includes an acid trapping agent (Add quencher), the acid trapping agent is tetrabutylammonium hydroxide (tetrabutylammonium hydroxide), lactate Tetrabutylammonium lactate, tributylamine, trioctylamine, triethanolamine, tri [2- (2-oxoethoxy) ethyl] amine Ministry of Economic Affairs Seals of employees of the Property Bureau Consumers Cooperatives (tris [2- (2-methoxyethoxy) ethyl] amine), N- (2,3-dihydroxypropyl) Hexahydrokoupidin (N- (2,3-dihydroxypropyl) ) piperidine), N- (2-Ethyl) piperidine (N- (2-hydroxyethyl) piperidine), morpholin, N- (2-Ethyl) morphine (N- (2-hydroxyethyl) morpholin), N- (2-Ethyl) via mouth (N- (2-hydroxyethyl) pyrrolidine), or N- (2-Ethyl) via mouthhead ( N- (2-hydroxyethyl) piperazine). This paper standard is applicable to China National Standard (CNS) A4 Regulations (210 X) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1230320 D8 VI. Application for Patent Scope 2 1. If the composition of item 20 of the patent scope is applied, of which The acid scavenger may be added in an amount of 0.001 to 10 parts per part of the photoacid generator. This paper is suitable for 3 Chinese National Standard (CNS) A4 regulations (210 X) 12 recommended ρ8 February 1993 revised page A7 B7 won J9 η 93. 2. 27 W ^ \ Supplement 1 [Diels-Alder ] Step 1[Diels-Alder] Step 1 H〇、^ [Reduction ] -^ Step 2 Peroxide -► Step 3 H+ (請先閱讀背面之注意事項再填寫本頁) 〇 Step 4 〇 〇 Ji ,、CI Λ -► R2/ 、b Step 5 經濟部智慧財產局員工消費合作社印製 其中R1、R2及G之定義如前所述。 步驟l(step 1)係選擇適當的雙烯類化合物,如:丁二 稀(131^&(1丨611€)、環戊二稀(〇}^1〇06111&(116116)、°夫喃(:[\^11)和 σ 塞吩(thiophene)等,與順丁稀二酸酐(maleic anhydride)進 行 Diels-Alder 反應。 步驟2(step 2)係將步驟1所得之產物以還原劑(例如 LiA1H4或NaBH4等)在無水極性溶劑中進行還原反應,將 酸酐還原成内酯。 · 步驟3(step 3)係將步驟2所得之產物以過氧化物 (peroxide)將雙鍵氧化成環氧化物(epoxide)。 ---------訂---------. 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 1230320 第911〇5108號,93年2月修正頁 A8SC8D8 |正充 #補 a 7 2 屬2 年9aH〇 、 ^ [Reduction]-^ Step 2 Peroxide -► Step 3 H + (Please read the notes on the back before filling in this page) 〇Step 4 〇〇Ji, CI Λ -► R2 /, b Step 5 Ministry of Economy The Intellectual Property Bureau employee consumer cooperatives have printed the definitions of R1, R2 and G as described above. Step l (step 1) is to select an appropriate diene compound, such as: butadiene (131 ^ & (1 丨 611 €), cyclopentadiene (〇) ^ 1〇06111 & (116116), ° Di (: [\ ^ 11), σ thiophene, etc., perform a Diels-Alder reaction with maleic anhydride. Step 2 (step 2) is a step of reducing the product obtained in step 1 with a reducing agent ( (For example, LiA1H4 or NaBH4, etc.) in a non-aqueous polar solvent to reduce the acid anhydride to lactone. • Step 3 (step 3) is to oxidize the double bond to peroxide with the peroxide obtained in step 2 Epoxide. --------- Order ---------. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 1230320 No. 91005108 , February 1993 revised page A8SC8D8 | Zhengchong # 补 a 7 2 belongs to 2 years 9a (CH2)rT^C (Π ) 六、申請專利範圍 1 · 一種化學增幅光阻劑組成物,其包含有: 如下式(II)結構重複單元之高分子聚合物; R1 其中R1為Η或CVC4的烷基;R2為羥基、匕-^烷氧基或 <^<8烷硫基;〇為((^2)1^氧或硫,其中11為〇〜4的整數; Rc為一内酯基;m為1〜3的整數;且該高分子聚合物之重 $百分比為總組成物之1至60% ; 一光酸產生劑(Photo-acid generator,PAG),其重量百 分比為該高分子聚合物之0.1至50% ;以及 ~溶劑,其重量百分比為總組成物之40至98%。 2·如申請專利範圍第1項之組成物,其中R1為氫或曱基。 •如申請專利範圍第1項之組成物,其中R2為羥基、C1〜C4 白勺燒氧基或烷硫基。 4·如申請專利範圍第1項之組成物 5 •如申請專利範圍第1項之組成物 為0、1或2的整數。 --------^--------- (請先閱tf背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作钍印裂 其中m為1的整數。 其中G為…出:^, η(CH2) rT ^ C (Π) VI. Patent Application Range 1. A chemically amplified photoresist composition comprising: a high molecular polymer having the following structural unit of the formula (II); R1 where R1 is Η or CVC4 Alkyl; R2 is hydroxy, d-alkoxy or < ^ < 8 alkylthio; 0 is ((^ 2) 1 ^ oxy or sulfur, where 11 is an integer from 0 to 4; Rc is one Lactone group; m is an integer from 1 to 3; and the weight percentage of the polymer is 1 to 60% of the total composition; a photo-acid generator (PAG), the weight percentage of which is 0.1 to 50% of the high molecular weight polymer; and ~ solvent, the weight percentage of which is 40 to 98% of the total composition. 2. The composition of item 1 in the scope of patent application, wherein R1 is hydrogen or fluorenyl. For example, for the composition of the scope of patent application, where R2 is a hydroxyl group, C1 ~ C4 alkoxy or alkylthio group. 4. As for the composition of scope 1 of the patent application 5 • As for scope 1 of the patent scope The composition is an integer of 0, 1, or 2. -------- ^ --------- (Please read the notes on the back of tf before filling out this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Eliminate Thorium partnership split printing wherein m is an integer of 1, wherein G is a ...:. ^, Η 2933^¾ )2933 ^ ¾)
TW91105108A 2002-03-18 2002-03-18 Positive photoresist TWI230320B (en)

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