TWI229925B - Package structure of photosensitive chip and method thereof - Google Patents
Package structure of photosensitive chip and method thereof Download PDFInfo
- Publication number
- TWI229925B TWI229925B TW092129653A TW92129653A TWI229925B TW I229925 B TWI229925 B TW I229925B TW 092129653 A TW092129653 A TW 092129653A TW 92129653 A TW92129653 A TW 92129653A TW I229925 B TWI229925 B TW I229925B
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- Prior art keywords
- light
- sensing
- chip
- sensing chip
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 235000012431 wafers Nutrition 0.000 claims description 50
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 235000014443 Pyrus communis Nutrition 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
^229925^ 229925
92129653 五、發明說日； 明所壤 【發^ 〇) Λ 修正 '^技術領域 本於日、<又w嘴取j 指利用^ Γ係為一種光感挪曰κ夕a 【先兪ί感蜊晶片封裝方上2封 先前技術厂……法以封d片 裝架構及其方法，尤 圓上翻^的光感測晶片封 個別 分離+ 复數個光威測日日y 傅斯弟〜圖所示，係先於晶 〇 ,⑺之光感測晶片χ n Q )，且於切割瓜私以 3 ，以承哉兮止a、B丨 再提供印刷電路板基板 A不載該光感測晶片丄〇 a ，並黏置支撐部30 a上以形成一凹部2;la ，再 1 0 aft於該基板2 〇 a之凹 部2 1 a内’並加孰使其固化，至、仓/ , |乙 … /、u化再進行打線，接著在該支 撐部30a上點接合劑’再於其上封—玻璃上蓋4〇3。 惟’習知之光感測晶片具有下列缺點： a於該印刷電路板基板2 〇 利用接合劑將該光感測晶片92129653 Fifth, the day of invention; The soil of the Ming Dynasty [发 ^ 〇) Λ Modification '^ Technical field Ben Yuri, < take the j to refer to the use of the ^ Γ system as a kind of light sense κ 夕 a [先 兪 ί Sensing wafer package 2 on the prior art factory ... method to seal the d package structure and method, especially the light sensor chip package turned up ^ individual separation + multiple optical inspection date y Fu Sidi ~ map It is shown that the light sensing chip χ n Q) precedes the crystal, and the light sensing chip is cut by 3 to support a, B, and then the printed circuit board substrate A is not provided with the light sensing chip.丄 〇a, and adhere to the support portion 30a to form a recess 2; la, and then 10 aft in the recess 2 1a of the substrate 2 〇a and add 孰 to solidify, to, warehouse /, | B ... /, U, and then wire bonding, and then a bonding agent 'on the support portion 30a, and then sealed thereon-the glass cover 403. However, the conventional light-sensing chip has the following disadvantages: a. On the printed circuit board substrate 2 〇 The light-sensing chip is made of a bonding agent.
1 ·習知之製程係先形成複數個光感测晶片於晶圓上，並 進行切割、上膠、打線等製程’以封裝該光感測晶片，因 此於該光感測晶片於封裝氣权中’谷易因微粒沾附該晶片 之感光區，而影響光感測效果，以致於必須提高製程環境 之潔淨度要求，所以增加製程成本。1 · The conventional process is to form a plurality of light-sensing wafers on the wafer, and then perform cutting, gluing, wire bonding and other processes to package the light-sensing wafer. 'Gu Yi because the particles adhere to the photosensitive area of the wafer and affect the light sensing effect, so that the cleanliness requirements of the process environment must be increased, so the process cost is increased.
2 ·習知之光感測晶片封裝結構，其支撐部體積大，增大 該光感測晶片封裝結構體積，因此增加材料成本，並且減 小運用於體積小之裝置上的機會。 緣是，發明人乃根據此尊缺失及依據多年來從事製造 產品之相關經驗，悉心觀察且研究之，乃潛心研究並配合 學理之運用，而提出一種設計合理且有效改善該缺失之本 發明。2 · The conventional light-sensing chip packaging structure has a large supporting portion, which increases the volume of the light-sensing chip packaging structure, thereby increasing the material cost and reducing the opportunity for application to small-sized devices. The reason is that the inventor based on this deficiencies and based on years of relevant experience in manufacturing products, carefully observed and researched, and devoted himself to studying and cooperating with the application of theories, and proposed an invention with a reasonable design and effective improvement of the deficiencies.
1229925 -^^ 92129653 五、發明說明（2) 【發明内容】 本發明案 裝架構及其方 區，因此避免 之封裝製程環 本發明案 裝架構及其方 此減小光感測 依據前述 裝架構，其包 明板及複數導 數焊接墊，且 設於該光感測 撐部上，以對 別電連接於該 一種光感 形成複數 分別具有一光 佈設複數 部係環繞且對 蓋設複數 別對應於該等 分離該晶 如此避免光感 測晶片封裝結 曰 修正一 之其一目 法，藉由 環境溫污 境之潔淨 之其二目 法，藉由 晶片之封 發明目的 括一基板 線，其中 該光感測 晶片上之 應於該光 光感測晶 測晶片之 個光感測 感測區及 分離之環 應於該等 透明板於 光感測區 圓上之個 測晶片於 構體積。 的，在 先進行 染該區 度要求 的，在 滅小支 裝架構 ’本發 、一光 該光感 晶片設 光感測 感測晶 片之焊 封裝方 晶片於 複數焊 狀支撐 晶片之 該等支 ;及 別光感 封裝製 於提供 封裝該 域，且 ’以致 於提供 撐部體 之體積 明係為 感測晶 測晶片 置於該 區周緣 片之光 接墊及 一種光感測晶片之封 光感測晶片之光感測 同時降低該晶片其後 於減少製程成本。 一種光感測晶片之封 積及其設置位置，因 〇 一種光感測晶片之封 片、一支撐部、一透 具有一光感測區及複 ，該支撐部環 明板固設於支 ，該等導線分 基板上 ，該透 感測區 基板上。 法，其包括： 一晶圓上’該等光感測晶片 接墊； 部於該晶圓上 光感測區外侧 撐部上，且該 ，使該等支撐 等透明板係分 測晶片。 程時被污染，且減小該光感1229925-^^ 92129653 V. Description of the invention (2) [Summary of the invention] The packaging structure of the present invention and its square area, so the packaging process to be avoided The packaging structure of the present invention and its reduction of light sensing are based on the foregoing packaging structure It includes a plate and a complex derivative soldering pad, and is provided on the light sensing support to be electrically connected to the one type of light sensing to form a plurality. Each has a light-arranged plurality of parts surrounding and corresponding to the cover. In order to separate the crystals, the light-sensing chip is packaged in such a way as to modify the one-mesh method, to clean the two-mesh method to clean the environment, and to enclose a substrate line by the purpose of sealing the wafer. A light-sensing area and a separate ring on the light-sensing wafer that should be located on the light-sensing crystal wafer should be the volume of each transparent wafer on the circle of the light-sensing area. In the case of dyeing the area, the welding package of the light-sensing wafer and the light-sensing wafer with the light-sensing wafer are mounted on the support package of the wafer. And other light-sensing packages are manufactured in the field that provides the package, and 'so that the volume of the supporting body is clearly the light pad for the sensing crystal chip placed on the periphery of the area and the light-sealing of a light-sensing chip The light sensing of the sensing chip simultaneously reduces the chip and subsequently reduces the process cost. The packaging and setting position of a light-sensing wafer are as follows: a sealing sheet of a light-sensing wafer, a support portion, a light-sensing area and a cover, and the support portion is fixed on a support plate. The wires are on a sub-substrate and on the substrate of the transparent sensing area. The method includes: on a wafer, the light-sensing wafer pads; on a support portion outside the light-sensing area on the wafer; and enabling the transparent plates such as the support to separately measure the wafer. Is polluted during the process and reduces the light perception
1229925 銮號 92129653 ____^ 曰 修正 1229925 銮號 92129653 ____^ 曰 修正 五、發明說明⑶ 〇 . >^解本發明之特徵及技術 為了使貴審查員此進一 / 細說明及附圖，然而所 内容，請參閱以下有關本發明：對本發明加以限制 附圖示僅提供參考與說明用’戒 附 者。 實ίΓί】第二圖所示，本發明t封 裝架構，其包括基板1 〇、光感澍3 g #部 ◦、透明板40及導線50，其中20具有 光感測區21及焊接塾2 2設置於且該焊接塾2 2環設於該光感測區2 1之周園’ 3: f感測晶片2 0設 置於該基板1 0上，該基板1 〇係可為印刷電路板’該支 撐部3 0環設於該光感測晶片2 0上^光感測區2 1外側 周緣，該透明板4 0如玻璃板或透明樹脂板’其固設於支 撐部3 0上，以對應於該光感測隱2 1 ’其中該透明板4 0、支撐部3 0及該光感測晶片2 〇之光感測區2 1間， 形成一空間2 3 ，再使該導線5 〇電連接於該支撐部3〇 周緣外側之焊接墊2 2及基板1 〇上’再利用保護體6 q 如環氧樹脂（Ε ρ Ο X y )，其置於該光感測晶片2 〇之 周緣及該光感測晶片2 0周緣之基板1 〇上， 導線5 0，以保護導線5 〇，並避免導線5 〇 =二 損，如此形成一體積小之封裝架構。 卜路及又 請參閱第三圖至第九圖所示，i中 裝方法，如第三圖至第三圖A所示，其^測晶片之之封 上形成複數個光感測晶片2 〇 ，且該^，於一晶圓7 0 別具有光感測區2丄及焊接墊2 2於复感測晶片2 0分 - 、/、上表面，如第四圖 1229925 -tm. 921296^ 年月日 你工 五、發明說明（4) ----- ，第五圖所示，再佈設複數分離之環狀支撐部3 〇於該晶 圓7 〇上，該環狀支撐部3 〇係可為11¥型感光膠或熱硬 化樹脂，使該等支撐部3 〇係環繞且對應於該等晶片2 〇 之光感測區2 1外側，如第六圖所示，蓋設複數透明板 4 0 ^該等支撐部3 〇上，且該等透明板4 〇係分別對應 於該等光感測區2 1 ，且再照射紫外光以固化該u v型感 光膠，以黏置固著該光感測晶片2 〇及該透明板4 〇，如 第七圖所示’係於晶圓7 0底部黏貼一膠帶層8 0，再利 用切割方式以分離該晶圓7 〇上之個別光感測晶片2 〇 ， 如第八圖所示，分離該光感測晶片2 0與該膠帶層8 0， 並使該光感測晶片2 〇黏置該基板1 〇上，如第九圖所 示’再電連接該導線5 〇於該光感測晶片2 〇之焊接墊 2 2及基板1 〇上’如第二圖所示，再塗覆保護體6 〇於 該光感測晶片2 0之周緣及該光感測晶片2 〇周緣之基板 1 0上’並包覆該等導線5 〇，因此藉由該支撐部3 〇及 透明板4 0封裝該光感測晶片2 〇之光感測區2 1 ，因此 避免環境溫污染該區域，以致於該晶片其後之封裝製程環 境之潔淨度要求可降低，以致於減少生產成本。 綜上所述，藉由本發明之「光感測晶片之封裝架構及 其方法」，即可藉由先進行封裝該光感測晶片之光感測 區，因此避免環境溫污染該區域，且同時降低該晶片其後 之封裝製程壞境之潔淨度要求，以致於減少製程成本，並 藉由減小支撐部體積，以致減小光感測晶片之封裝之 體積。 惟以上所述僅為本發明夕4 — --之較佳可仃實施例，非因此拘i1229925 9292129653 ____ ^ said amendment 1229925 銮 92129653 ____ ^ said amendment V. Description of the invention ⑶ 〇 > ^ Understand the characteristics and technology of the present invention In order for your examiner to further / detailed description and drawings, but the content Please refer to the following related to the present invention: the present invention is limited, and the drawings are provided for reference and explanation only. Actually, as shown in the second figure, the t package architecture of the present invention includes a substrate 10, a light sensor 3g # 部 ◦, a transparent plate 40, and a lead 50, of which 20 has a light sensing region 21 and a soldering pin 2 2 It is arranged and the soldering ring 2 2 is arranged in the circle of the light sensing area 21 '3: the f sensing chip 20 is arranged on the substrate 10, and the substrate 10 can be a printed circuit board. The support portion 30 is arranged on the light-sensing chip 20 at the outer periphery of the light-sensing region 21, and the transparent plate 40 such as a glass plate or a transparent resin plate is fixed on the support portion 30 to correspond to A space 2 3 is formed between the light sensing recess 2 1 ′, wherein the transparent plate 40, the support portion 30, and the light sensing region 21 of the light sensing chip 20 are formed, and then the lead wire 5 is electrically charged. The soldering pad 22 connected to the outer side of the supporting portion 30 and the substrate 1 〇 'recycling protective body 6 q such as epoxy resin (E ρ Ο X y), which is placed on the peripheral edge of the light sensing chip 20 And on the substrate 10 at the periphery of the light-sensing chip 20, a lead 50 is provided to protect the lead 50, and to prevent the lead 50 = two losses, thus forming a small-sized package structure. Bu Lu and please also refer to the third to ninth diagrams, i, as shown in the third to third diagrams A, the seal of the test wafer to form a plurality of light sensing wafers 2 〇 And, ^, there is a light sensing area 2 丄 and a solder pad 22 on a wafer 70, and it is on the complex sensing wafer 20 points. The upper surface is as shown in the fourth figure 1229925 -tm. 921296 ^ year On the fifth day of your work, the invention description (4) -----, as shown in the fifth figure, a plurality of separate ring-shaped support portions 30 are arranged on the wafer 70, and the ring-shaped support portions 30 are It can be 11 ¥ type photoresist or thermosetting resin, so that the support portions 30 are surrounded and correspond to the outside of the light sensing area 21 of the wafers 20, as shown in the sixth figure, a plurality of transparent plates are covered. 4 0 ^ on the supporting portions 30, and the transparent plates 40 respectively correspond to the light sensing areas 2 1, and then irradiate ultraviolet light to cure the UV-type photosensitive adhesive, and fix the adhesive As shown in the seventh figure, the light-sensing wafer 2 0 and the transparent plate 4 0 are attached to the bottom of the wafer 70 with an adhesive tape layer 80, and then the cutting method is used to separate the individual light sensors on the wafer 70. Crystal 20, as shown in the eighth figure, the light sensing wafer 20 and the tape layer 80 are separated, and the light sensing wafer 20 is stuck on the substrate 10, as shown in the ninth figure. Electrically connect the conductive wire 50 to the solder pad 22 and the substrate 10 of the light sensing chip 20, as shown in the second figure, and then apply a protective body 6 to the peripheral edge of the light sensing chip 20 and The light-sensing wafer 2 0 is surrounded on the substrate 10 and is covered with the wires 50. Therefore, the light-sensing area 2 of the light-sensing wafer 2 0 is encapsulated by the supporting portion 30 and the transparent plate 40. 1, so avoid environmental pollution of the area, so that the cleanliness requirements of the subsequent packaging process environment of the chip can be reduced, so as to reduce production costs. In summary, with the "package structure and method of a light-sensing chip" of the present invention, the light-sensing area of the light-sensing chip can be packaged first, thus avoiding environmental pollution of the area, and at the same time Reduce the cleanliness requirements of the subsequent packaging process environment of the chip, so as to reduce the process cost, and reduce the volume of the support portion, so as to reduce the volume of the package of the light sensing chip. However, the above description is only a preferred embodiment of the present invention, and is not a restriction.
m im i
1229925 案號 92129653 _a. 曰 修正 五、發明說明（5) 限本發明之專利範圍，故舉凡運用本發明之說明書及圖示 内容所為之等效結構變化，均同理皆包含於本發明之範圍 内，給予陳明。1229925 Case No. 92129653 _a. Revision V. Description of the invention (5) Limits the patent scope of the present invention. Therefore, any equivalent structural changes made using the description and illustrations of the present invention are included in the scope of the present invention in the same way. Within, give Chen Ming.
第10頁 1229925 案號 92129653 曰 修正 圖式簡單說明 第一圖係習知 第二圖係本創 第三圖係本創 第三圖Α係本 第四圖係本創 第五圖係本創 第六圖係本創 第七圖係本創 第八圖係本創 第九圖係本創 圖。 【圖示中參考 習知 光感測 印刷電 凹部2 支撐部 玻璃上 的光 作之 作之 創作 作之 作之 作之 作之 作之 作之 號數 感測 光感 晶圓 之光 光感 光感 光感 分離 光感 導線 晶片封裝結構側視圖； 測晶片之封裝架構， 上形成光感測晶片上視圖 感測晶片放大圖， 測晶片塗設支撐部上視圖 測晶片塗設支撐部側視圖 測晶片蓋設透明板侧視圖 成個別之光感測晶片側視圖， 測晶片設置於基板上之側視圖；及 電連接於光感測晶片及基板之側視 晶片1 0 路板基板 1 a 3 0a 蓋4 0 a a2 0a 本發明 基板1 0 光感測晶片2 0 光感測區2 1 焊接墊2 2 空間2 3 支撐部3 0 透明板4 0 導線5 0 保護體6 0 晶圓7 0 膠帶層8 0Page 10 1229925 Case No. 92129653 Means a simple explanation of the modified diagram. The first picture is known. The second picture is the original picture. The third picture is the original picture. The third picture is the fourth picture. The fourth picture is the fifth picture. The sixth picture is the original picture, the seventh picture is the original picture, the eighth picture is the original picture, and the ninth picture is the original picture. [In the picture, reference is made to the conventional light-sensing printed electrical recessed portion 2 on the support glass. The work of the creation of the creation of the creation of the creation of the creation of the creation of the creation of the creation of the creation of the creation of the work of the number sensing light sensor wafer light photosensitivity separation light Side view of the sensing wire chip package structure; The package structure of the test chip is formed on the photo sensor chip to form an enlarged view of the sensor chip, an upper view of the chip coating support portion, a side view of the chip coating support portion, a side view of the chip cover, and a transparent plate. The side view is a side view of an individual light sensing chip, the side view of the test chip being disposed on the substrate; and the side view wafer electrically connected to the light sensing chip and the substrate 1 0 circuit board substrate 1 a 3 0a cover 4 0 a a2 0a The substrate of the present invention 1 0 Photo-sensing wafer 2 0 Photo-sensing area 2 1 Solder pad 2 2 Space 2 3 Support 3 0 Transparent plate 4 0 Wire 5 0 Protective body 6 0 Wafer 7 0 Tape layer 8 0
第11頁Page 11
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092129653A TWI229925B (en) | 2003-10-24 | 2003-10-24 | Package structure of photosensitive chip and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092129653A TWI229925B (en) | 2003-10-24 | 2003-10-24 | Package structure of photosensitive chip and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI229925B true TWI229925B (en) | 2005-03-21 |
| TW200515550A TW200515550A (en) | 2005-05-01 |
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| TW092129653A TWI229925B (en) | 2003-10-24 | 2003-10-24 | Package structure of photosensitive chip and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI229925B (en) |
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| TW200515550A (en) | 2005-05-01 |
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