TWI228592B - Gas sensor of zinc oxide - Google Patents

Gas sensor of zinc oxide Download PDF

Info

Publication number
TWI228592B
TWI228592B TW92126963A TW92126963A TWI228592B TW I228592 B TWI228592 B TW I228592B TW 92126963 A TW92126963 A TW 92126963A TW 92126963 A TW92126963 A TW 92126963A TW I228592 B TWI228592 B TW I228592B
Authority
TW
Taiwan
Prior art keywords
zinc oxide
sensing device
gas sensing
zinc
oxide gas
Prior art date
Application number
TW92126963A
Other languages
Chinese (zh)
Other versions
TW200512451A (en
Inventor
Chuang-De Huang
Wen-Jeng Huang
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW92126963A priority Critical patent/TWI228592B/en
Priority to US10/928,679 priority patent/US20050069457A1/en
Application granted granted Critical
Publication of TWI228592B publication Critical patent/TWI228592B/en
Publication of TW200512451A publication Critical patent/TW200512451A/en

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

A gas sensor of zinc oxide includes: a base; two electrodes formed on the base; and a zinc oxide film including a number of zinc oxide nanowires formed on the base and the two electrodes. The zinc oxide nanowires have microstructure of a column or tube. The zinc oxide nanowires can increase gas passing rate, and to make the gas sensor of zinc oxide more sensitive.

Description

1228592 、發明說明(1) 【發明所屬之技術領域】 本杳明涉及一種氣體感測裝 氧化鋅纖維之氣體感測裝置。 ,尤其涉及一種示米級 【先前技術】 氣體感測器係利用翁敲分 化之特性而製成之器件。氧:附氣體後引起其性質變 測、工業爐燃燒氣氛之控制*,體感測器在汽車尾氣檢 用。 次二乳淨化方面有著廣泛應 氧化辞(Zinc OxidfO * 雕 $ 之感測設備。氧化鋅氣體感=測器為偵測co,等氣體 感測膜材料,基於氣體於氧化原理係:採用氧化鋅為 流子濃度發生相應之變化,而^面之吸附可導致材料栽 氧化鋅鲈炎贫p 欠化攸而改變該材料之電導率。當 利於被測氣體之吸附。因此存在一定空隙時,將有 氧化鋅氣體感測器之塑=产二匕辞膜之疏鬆性成為影響 -氧化銘絕緣基ίΰ ::於?知之請感測器包括: 電極11,1 2 .—蓿—Λ* / ;氧化鋁絕緣基底1 0表面之兩 鋅膜14。目气1盍虱化鋁絕緣基底1〇及兩電極12之氧化 晶鋅鍍在印;電::鋅感測器之傳統製備方法係把奈米結 加熱的方式f成負=1匕紹基底上,然後於空氣中以逐渐 中氧化,致體感測器。由於鋅很容易於空氣 故,一妒而+ ^ 9 ^成軋化鋅,且保護内層辞不致氧化。 米結曰曰^ 6 I二奈米結晶鋅需較高之燒結溫度,以保證奈 〇曰日、’兀王虱化成奈米結晶氧化辞。但,於加熱燒結 1228592 五、發明說明(2) ^ 加熱之速率及溫度太高將破壞氧化辞孔洞結構之形 言 且奈米結晶氧化鋅之粒徑大小亦會隨則燒結溫度之提 ^而增大’導致晶粒間的孔洞結構消失,低感測 + 敏度。 〜嚴 你兩故’提供一種孔洞結構不會因製備過程而消失從而F久 -莖敏之氣體感測裝置實為必要。 牛 【内容】 而 ^發明之目的在於提供一種孔洞結構不會因製備過程 4失從而降低靈敏之氣體感測裝置。 ^ 裝置為$現本發明目的,本發明提供一種氧化辞氣體感測 2 ; 1其,括:一絕緣基底;形成於絕緣基底表面之兩電 米纽Γ覆蓋絕緣基底及兩電極之奈米級氧化辞膜;上述夯 纖維ί ^鋅膜為柱狀或管狀具有高密度排列之氧化鋅奈i 生^先前技術相較,本發明之氧化辞氣體感測裝置直 米纖i # ” ^# ^纖㈣列’該氧化鋅奈 體.^列之柱狀或官狀結構使孔洞結構得以保留,使^ 鋅氣5=ΐ米纖維陣列間之流通量增加’故能提高氧5 乳體感測裝置之靈敏度。 化 【實施方式】 技—下面將結合附圖對本發明作進一步之詳細說明。 月併爹閱第三圖及第四圖,本發明第一每祐如夕^ 咧器3,其包衽.π绫其只鈿例之氣體感 之兩雷二 形成於絕緣基底3〇表面 電和31,32 ; 一覆蓋絕緣基底3〇及兩電和训之面奈 第5頁 1228592 五、發明說明(3) 米級氧化辞膜34,上述氧化 〜 ^ 排列之氧化辞奈米纖維陣 、馮柱狀或管狀具有高密度 提供一絕緣基底3〇,其可為步驟如下: 絕緣性能好的材料製成,^氧^ 一薄板或膜層。其通常由 等。另,氣體感測器3 一般需H銘、石英、陶瓷或氮化矽 良好檢測,故,絕緣基底3 f 熱到一定溫度才能進行 導性為佳。 一 材料又以同時具備良好之.熱 於絕緣基底30表面形成電極31 鉑(Pt)、金(Αυ)或其合金等材料、雨 電極31,32可由 定圖案形成於絕緣基底3〇表面,===積法或濺鍍法按預 為佳,其厚度可為40 0〜70 0 0太米 ^成之電極膜層以厚膜 置電極導線,電極之數量、& ^及庚f極31、32還可配 加以改變。 〃居度還可根據實際需要 採用磁控濺射法製備氧化鋅 酸溶液對絕緣基底及兩電極進行清洗衣;用適當之微 並用高純度之氮氣吹幹。賤射參數隨=去離子水清洗 啕+ N之k擇本貝施例可採用··金屬鋅靶 99· 9 99%,靶直徑為1 〇〇毫米;氧氣、惫八、、又:’、、 積過程之反應氣體及濺射氣體,t氬氣[匕::作為反應沈 功率為6 0 0W,基片溫度控制在2〇〇〜30 0它,於、、接1,射 基片保持旋轉。製得之氧化辞膜為柱狀或有古 排列之氧化鋅奈米纖維陣列。 狀八有问在度 “本發明之第二實施例係採用化學氣相沈積法製備氧化 辞膜。把製備完成之表面沈積有兩電極、32之芙底放 第6頁 1228592 五、發明說明(4) 入氣相反應 距離;再取 碾碎並轉移 及基底到溫 生熱還原反 觸生長成氧 鐘内發生。 及基底,氧 達10微米。 本發明 同樣能達到 於氧化辞膜 結構得以保 量增加,氧 綜上所 誕出專利申 例’自不能 技藝之人士 應涵蓋於以 還可利用 本發明之 為奈米纖 留’故使 化鋅氣體 述,本發 請。惟, 以此限制 援依本發 下申請專 其他鍍膜 技術效果 維陣列且 氣體於氧 感測裝置 明確已符 以上所述 本案之申 明之精神 利範圍内 爐之紹舟中,且離鋁舟中心有0· 5〜2· 5厘米之 同重里之氧化鋅粉及石墨粉為反應原材料, 至鋁舟中;並通入氬氣,加熱上述反應原材料 度8 80〜9 0 5 X:。氧化鋅粉與石墨粉於高溫下發 應,生成鋅蒸氣,鋅蒸氣與基底及兩電極相接 化鋅奈米纖維陣列,該生長過程一般在2〜1 〇分 生成之氧化鋅奈米纖維陣列垂直密佈於兩電極 化辞奈米纖維直徑範圍為20〜150奈米,長度可 技術生長奈米級氧化鋅膜, 。本發明之氣體感測裝置由 為柱狀或管狀結構》使孔洞 化鋅奈米纖維陣列間之流通 之靈敏度大大提高。 合發明專利之要件,遂依法 者僅為本發明之較佳實施 請專利範圍。舉凡熟悉本案 所作之等效修飾或變化,皆1228592 Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a gas sensing device for a gas sensing device of zinc oxide fiber. In particular, it relates to a meter class. [Prior art] A gas sensor is a device made by utilizing the characteristics of on-off division. Oxygen: the change of properties caused by the attached gas, the control of the combustion atmosphere of industrial furnaces *, the body sensor is used for automobile exhaust gas detection. In terms of secondary milk purification, it has a wide range of sensing equipment (Zinc OxidfO * Carving sensor. Zinc oxide gas sensor = gas detection film for detecting co, etc., based on the principle of gas-based oxidation: using zinc oxide In order to change the concentration of the carrier, the adsorption of the surface can cause the material to become poor and change the conductivity of the material. When it is beneficial for the adsorption of the measured gas, so when there is a certain gap, the Plasticity with a zinc oxide gas sensor = the looseness of the two-layered film becomes an influence-oxidized insulating base 于 ΰ ::? Know the sensor please include: electrode 11, 1 2 .— 草 —Λ * /; Two zinc films 14 on the surface of alumina insulation substrate 10. Eyes 1 Tickled aluminum insulation substrate 10 and two oxides of zinc oxide on the electrodes 12 are plated on the printed board. The method of heating the junction temperature f becomes negative = 1 on the substrate, and then gradually oxidizes in the air, causing the body sensor. Because zinc is easy to air, + ^ 9 ^ becomes rolled zinc, It also protects the inner layer from oxidization. Mi-Jie said ^ 6 I di-nanocrystalline zinc needs to be higher The sintering temperature is to ensure that the nano-day, 'Wuwang lice transformed into nano-crystalline oxidation. However, the heating and sintering 1228592 V. Description of the invention (2) ^ The heating rate and temperature are too high will destroy the shape of the oxidation hole structure It is said that the particle size of nanocrystalline zinc oxide will increase with the increase of the sintering temperature, which will lead to the disappearance of the pore structure between the crystal grains and low sensitivity + sensitivity. The F-long-stem-sensitive gas sensing device is not necessary due to the preparation process. [Content] The purpose of the invention is to provide a gas sensing device with a hole structure that will not be lost due to the manufacturing process. ^ The device is for the purpose of the present invention, and the present invention provides an oxidation gas sensing 2; 1 which includes: an insulating substrate; two electrical electrodes formed on the surface of the insulating substrate Γ cover the insulating substrate and the nanometers of the two electrodes Grade oxidized film; the above-mentioned rammed fiber is a columnar or tubular zinc oxide nanometer with high density arrangement. Compared with the prior art, the oxidized gas sensing device of the present invention is straight rice fiber # ”^ # ^ Cellulose column 'The zinc oxide nanobody. ^ The columnar or official structure of the column keeps the hole structure, so that ^ zinc gas 5 = increased flow between the rice fiber arrays' can improve the oxygen 5 milk body sensing Sensitivity of the device. [Embodiment] Technique-The present invention will be described in further detail with reference to the accompanying drawings. The third and fourth figures are read in conjunction with the following figures. Included. Π 雷 The only two senses of the two senses of gas are formed on the surface of the insulating substrate 30 and 31, 32; one covering the insulating substrate 30 and the surface of the two electric and training pages 51228592 V. Invention Explanation (3) The meter-level oxidation film 34, the above-mentioned oxidation ^ array of the oxidation fiber nano-fiber array, Feng columnar or tubular has a high density to provide an insulating substrate 30, which can be as follows: made of a material with good insulation performance ^ Oxygen ^ a thin plate or film. It usually consists of. In addition, the gas sensor 3 generally requires good detection by H, quartz, ceramic, or silicon nitride. Therefore, the insulating substrate 3 f can conduct heat only to a certain temperature. A material is also good at the same time. It is hot on the surface of the insulating substrate 30 to form the electrode 31. Materials such as platinum (Pt), gold (Αυ) or its alloy, and rain electrodes 31, 32 can be formed on the surface of the insulating substrate 30 by a fixed pattern. == Production method or sputtering method is preferred. Its thickness can be 40 ~ 70 0 0m. The thickness of the electrode film layer is to place the electrode wire with a thick film. The number of electrodes, & , 32 can also be matched with changes. Presence can also be used to prepare a zinc oxide acid solution by magnetron sputtering to clean the insulating substrate and the two electrodes according to actual needs; dry with a suitable micro and high purity nitrogen. The parameters of the low-level shooting are as follows: deionized water cleaning 啕 + N. This option can be used in this example. The metal zinc target is 99.99%, and the target diameter is 1000 mm. Oxygen, exhausted, and: ', The reaction gas and sputtering gas of the product process, t argon gas [:: as the reaction sink power is 600W, the substrate temperature is controlled at 2000 ~ 300, it is connected to 1, and then, the substrate is kept Spin. The prepared oxide film is a columnar or ancient array of zinc oxide nanofiber arrays. "The second embodiment of the present invention is the preparation of an oxide film by chemical vapor deposition. The prepared surface is deposited with two electrodes and a 32-degree bottom is placed on page 6, 1228592. V. Description of the invention ( 4) The reaction distance into the gas phase; then crushed and transferred and the substrate to the warm-thermal reduction reaction to grow into an oxygen clock. And the substrate, oxygen up to 10 microns. The invention can also achieve the protection of the oxide film structure As the amount increases, the patent application on the oxygen synthesis, “Persons who ca n’t make skills, should be covered by the use of the present invention for the retention of nano-fibers,” so the zinc gas is described, but this limitation. In accordance with this issue, apply for the application of other coating technology effect dimension array and the gas in the oxygen sensing device clearly meets the spirit of the scope of the declaration of the case described above, and is 0.5 to 5 from the aluminum boat center. 2.5 cm of zinc oxide powder and graphite powder in the same weight as the reaction raw materials, into the aluminum boat; and argon gas is heated to heat the reaction raw materials to a degree of 8 80 ~ 9 0 5 X: zinc oxide powder and graphite powder in Hair in high temperature Zinc vapor is generated, and the zinc vapor is connected to the substrate and the two electrodes to form a zinc nanofiber array. The growth process is generally 2 to 10 minutes, and the zinc oxide nanofiber array is vertically densely distributed in the diameter range of the two electrode nanofibers. It is 20 ~ 150 nanometers, and the length can be used to grow nano-scale zinc oxide film. The gas sensing device of the present invention has a columnar or tubular structure. The sensitivity of the hole-forming zinc nano-fiber array is greatly improved. In accordance with the requirements of the invention patent, according to the law, the scope of the patent is only for the preferred implementation of the invention. For all equivalent modifications or changes familiar with this case,

1228592 圖式簡單說明 第一圖係習知技術之氧化鋅感測器之側面示意圖。 第二圖係第一圖之氧化鋅感測器之俯視圖。 第三圖係本發明之氧化鋅感測器之側面示意圖。 第四圖係本發明之氧化鋅感測器之側面局部放大示意 圖。 【主要元件符號說明】 氣體感測器 3 絕緣基底 30 電極 31,3 2 氧化鋅膜 341228592 Brief description of the diagram The first diagram is a schematic side view of a zinc oxide sensor of the conventional technology. The second figure is a top view of the zinc oxide sensor of the first figure. The third figure is a schematic side view of the zinc oxide sensor of the present invention. The fourth figure is a partially enlarged schematic side view of the zinc oxide sensor of the present invention. [Description of main component symbols] Gas sensor 3 Insulating substrate 30 Electrode 31, 3 2 Zinc oxide film 34

第8頁Page 8

Claims (1)

12285921228592 六、申請專利範圍 1 · 一種氧化鋅氣體感測裝置,其包括·· 、巴、彖基底,形成於絕緣基底表面之兩電極· “復盍、纟巴緣基底及兩電極之奈米級氧化鋅膜,上述卉 米級氧化鋅膜為柱狀或管狀具有高密度 二不 鋅奈米纖維陣列。 j之虱化 如申請專利範圍第1項所述之氧化鋅氣體感測裝置,立 中所述之絕緣基底材料可為氧化鋁、石 /、 3 ·如申清專利範圍第1項所述之氧化鋅氣體感測裝置,其 中斤述之電極通過沈積法或錢鍍法形成於 底表面。 K、、彖基 4.如申請專利範圍第i項所述之氧化鋅氣體感測裝置,豆 中所述之電極材料可為鉑(Pt)、金(Au)或其合金材、 5·如甲印导利範圍第丨項所述之氧化鋅氣體感測裝置,直 中所述之奈米級氧化鋅膜之製備可採用磁控濺射法、 6·如申請專利範圍第丨項所述之氧化鋅氣體感測裝置,/直 中所述之奈米級氧化鋅膜之製備可採用化學氣相沈、; 法。 /匕y 7·如申請專利範圍第丨項所述之氧化鋅氣體感測裝置,其 中所述之氧化鋅奈米纖維直徑範圍為2 0〜1 5 0奈米/、 8·如申請專利範圍第1項所述之氧化鋅氣體感測裝置,其 中所述之氧化鋅奈米纖維長度可達1〇微米。 ’、6. Scope of patent application1. A zinc oxide gas sensing device, which includes ..., Ba, 彖 substrates, two electrodes formed on the surface of an insulating substrate The zinc film, the above-mentioned Hui-grade zinc oxide film is a columnar or tubular nanofiber array with high-density dizinc nanofibers. The lice of zinc is a zinc oxide gas sensing device as described in item 1 of the scope of patent application, Lizhong Institute The insulating base material may be alumina, stone, etc. 3. The zinc oxide gas sensing device as described in item 1 of the patent application scope, wherein the electrode described above is formed on the bottom surface by a deposition method or a gold plating method. K., fluorene-based 4. The zinc oxide gas sensing device described in item i of the scope of the patent application, the electrode material described in the bean may be platinum (Pt), gold (Au) or its alloy, 5 · 如The zinc oxide gas sensing device described in Item 丨 of the guideline of Jiayin, the preparation of nanometer-sized zinc oxide film described in the above can be made by magnetron sputtering method. Zinc oxide gas sensing device The zinc film can be prepared by a chemical vapor deposition method. 7 / The zinc oxide gas sensing device described in item 丨 of the patent application range, wherein the zinc oxide nanofiber diameter ranges from 20 ~ 150 nm /, 8. The zinc oxide gas sensing device according to item 1 of the scope of the patent application, wherein the length of the zinc oxide nanofibers can reach 10 microns.
TW92126963A 2003-09-30 2003-09-30 Gas sensor of zinc oxide TWI228592B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW92126963A TWI228592B (en) 2003-09-30 2003-09-30 Gas sensor of zinc oxide
US10/928,679 US20050069457A1 (en) 2003-09-30 2004-08-26 Gas sensor with zinc oxide layer and method for forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92126963A TWI228592B (en) 2003-09-30 2003-09-30 Gas sensor of zinc oxide

Publications (2)

Publication Number Publication Date
TWI228592B true TWI228592B (en) 2005-03-01
TW200512451A TW200512451A (en) 2005-04-01

Family

ID=36013486

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92126963A TWI228592B (en) 2003-09-30 2003-09-30 Gas sensor of zinc oxide

Country Status (1)

Country Link
TW (1) TWI228592B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4841917B2 (en) * 2005-09-27 2011-12-21 東レエンジニアリング株式会社 Oxygen concentration measuring device
CN101493433B (en) * 2009-03-05 2012-05-23 浙江大学 Gold plated ZnO nano-bar array electrode and method for making same

Also Published As

Publication number Publication date
TW200512451A (en) 2005-04-01

Similar Documents

Publication Publication Date Title
Ryu et al. ZnO sol–gel derived porous film for CO gas sensing
Yang et al. Ethanol gas sensor based on Al-doped ZnO nanomaterial with many gas diffusing channels
Urasinska-Wojcik et al. Ultrasensitive WO3 gas sensors for NO2 detection in air and low oxygen environment
Hsueh et al. CuO nanowire-based humidity sensors prepared on glass substrate
Kim et al. Significant enhancement of the sensing characteristics of In2O3 nanowires by functionalization with Pt nanoparticles
Le Hung et al. Enhancement of CO gas sensing properties in ZnO thin films deposited on self-assembled Au nanodots
Lee et al. Semiconductor gas sensor based on Pd-doped SnO2 nanorod thin films
Van Hieu Comparative study of gas sensor performance of SnO2 nanowires and their hierarchical nanostructures
Xu et al. Au-loaded In2O3 nanofibers-based ethanol micro gas sensor with low power consumption
Choi et al. Synthesis and gas sensing performance of ZnO–SnO2 nanofiber–nanowire stem-branch heterostructure
Bae et al. Electrical and reducing gas sensing properties of ZnO and ZnO–CuO thin films fabricated by spin coating method
Meng et al. Preparation and gas sensing properties of undoped and Pd-doped TiO2 nanowires
El-Maghraby et al. Synthesis of SnO2 nanowires their structural and H2 gas sensing properties
Shaalan et al. Synthesis of metal and metal oxide nanostructures and their application for gas sensing
CN101811888B (en) Method for preparing composite air-sensitive membrane of carbon nano tube embedded with oxide quantum dots
Van Toan et al. Scalable fabrication of SnO2 thin films sensitized with CuO islands for enhanced H2S gas sensing performance
Shooshtari et al. Ammonia room-temperature gas sensor using different TiO2 nanostructures
Jin et al. Dependence of NO2 gas sensitivity of WO3 sputtered films on film density
Choi et al. H2 sensing characteristics of highly textured Pd-doped SnO2 thin films
Hsueh et al. A flexible ZnO nanowire-based humidity sensor
RU2709599C1 (en) GAS SENSOR, A CHEMORESISTIVE TYPE MULTI-SENSOR RULER BASED ON OXIDIZED TWO-DIMENSIONAL TITANIUM CARBIDE (MXene) AND A METHOD FOR PRODUCTION THEREOF
TWI228592B (en) Gas sensor of zinc oxide
Qiu et al. Hydrogen sensor based on RF-sputtered thermoelectric SiGe film
Panahi et al. Optimization of gas sensing performance of nanocrystalline SnO2 thin films synthesized by magnetron sputtering
CN1296702C (en) Zinc oxide gas sensing device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees