TWI227650B - Organic light-emitting diode - Google Patents

Organic light-emitting diode Download PDF

Info

Publication number
TWI227650B
TWI227650B TW92100473A TW92100473A TWI227650B TW I227650 B TWI227650 B TW I227650B TW 92100473 A TW92100473 A TW 92100473A TW 92100473 A TW92100473 A TW 92100473A TW I227650 B TWI227650 B TW I227650B
Authority
TW
Taiwan
Prior art keywords
organic light
layer
light emitting
emitting diode
emitting layer
Prior art date
Application number
TW92100473A
Other languages
Chinese (zh)
Other versions
TW200412817A (en
Inventor
Tiao-Hung Hsiao
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW92100473A priority Critical patent/TWI227650B/en
Publication of TW200412817A publication Critical patent/TW200412817A/en
Application granted granted Critical
Publication of TWI227650B publication Critical patent/TWI227650B/en

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

An organic light-emitting diode (OLED) is provided. It comprises a substrate, an anode layer, a cathode layer, an organic emitting layer, and a optical compensating film, wherein the organic emitting layer comprises a red organic emitting layer, a blue organic emitting layer, and a green organic emitting layer. The anode layer is located on the substrate. The organic emitting layer is located on the anode layer. The cathode layer is located on the organic emitting layer. The optical compensating film is located between the substrate and the anode layer under the red and blue organic emitting layer, whereby rising the transmittance of red light and blue light. Moreover, there is no optical compensating film under the green organic emitting layer to keep the transmittance of green light.

Description

1227650 五、發明說明(1) 發明所屬之技術領i 本發明是有關於一種有機發光二極體(0rganic Emitting Diode,簡稱0LED),且特別是關於一種: 明度(transmittance)之有機發光二極體。 先前技術 P过著南科技之發展’視產品,特別是數位化 或影像裝置已經成為在一般曰常生活中所常見的產 些數位化之視訊或影像裝置中,顯示器是—個重要 以顯示相關資訊。使用者可由顯示器讀取資訊,或 制裝置的運作。而且,為了配合現代生活模式,視 V衣置之體積日漸趨於薄輕。傳統的陰極層射線顯 雖然仍有其優點,但是其需佔用大體積且耗電。因 合光電技術與半導體製造技術,面板式的顯示器已 出成為目雨常見之顯示器產品,例如液晶顯示器或 發光顯示器。 其中’有機發光二極體為自發光性的元件,因 ,直流低電壓驅動、高亮度、高效率、高對比值、 薄並且其發光色澤由紅(r e d,簡稱R )、綠(g r e e η G)、以及藍(blue,簡稱B)三原色至白色的自由度ί 此有機發光二極體被喻為下一是世代的新型平面面 重點。有機發光二極體技術除了兼具液晶顯示器 $高解析度,以及光二極體的主動發光、響應速度 电冷光源等優點外,還有視角廣、色彩對比效果好 低等多項優點。因此,有機發光二極體可廣泛應用1227650 5. Description of the invention (1) The technical field to which the invention belongs i. The present invention relates to an organic light emitting diode (0rganic Emitting Diode, referred to as 0LED), and in particular to an organic light emitting diode of: transmittance . The previous technology has undergone the development of South Technology's video products, especially digital or imaging devices have become common in ordinary life to produce some digital video or image devices. The display is an important Information. The user can read the information from the display or control the operation of the device. Moreover, in order to match the modern living mode, the volume of V-shirts is gradually becoming thinner and lighter. Although the traditional cathode layer radiation still has its advantages, it needs to occupy a large volume and consume power. Due to the combination of optoelectronic technology and semiconductor manufacturing technology, panel-type displays have become common display products such as liquid crystal displays or light-emitting displays. Among them, the organic light-emitting diode is a self-luminous element. Because of the low-voltage DC drive, high brightness, high efficiency, high contrast value, thin, and its luminous color is red (red, R for short), green (gree η G ), And the degrees of freedom from the three primary colors of blue (blue, B for short) to white. This organic light-emitting diode is considered to be the next-generation planar focal point of the next generation. Organic light emitting diode technology not only has the advantages of high-resolution liquid crystal display, active light emission of light diode, response speed, electric cooling light source, etc., but also has many advantages such as wide viewing angle and low color contrast effect. Therefore, organic light emitting diodes can be widely used

Light 進透 之視訊 品 ° is. 元件, 進而控 訊或影 示器, 此,配 被發展 是有機 其特性 以及輕 ,簡稱 8,因 板的發 的輕薄 快與省 及成本 於液晶Light through the video products ° is. Components, and then control or monitor, so the development is organic and its characteristics and lightness, referred to as 8, because the lightness of the board is thin and fast and saves money and costs.

l0254twf.ptd 第6頁l0254twf.ptd Page 6

1227650 五、發明說明(2) 顯示器或指示看板的背 個人數位助理(PDA )等 從驅動方式的觀點 (passive matrix)驅動 方式兩大種類。被動式 常簡单’因而成本較低 便是利用薄膜電晶體技 I C直接製做在面板上, 求,甚至可運用在大尺 然而,由於傳統的 成的結構,所以當光從 的損失。一般而言,光 是90 %,而當有機發光 度則約為8 0 %。另外, 時’則綠光之透明度約 二極體發出何種光,都 發明内容 因此,本發明之目 增進其光的透明度。 本發明之再一目的是提供一 昇其中紅光與藍光的透明度,並 本發明之另一目的是提供一 有機發光二極體的紅(R)、綠(G) 到最佳化。 光源、行動電話、數位相機、以及 來看,有 方式及主 有機發光 。而主動 術驅動有 達到體積 寸面板如 有機發光 其中發射 直接穿過 二極體發 如果有機 為 87 % ; 會有亮度 機發光二極 ^(active 二極體的優 式有機發光 機發光二極 輕薄短小及 電腦及平面 二極體是屬 出來時,必 玻璃基板所 出数光或紅 發光二極體 也就是說, 損失的問題 體可分 matrix 點在於 二極體體,且 降低成 電視等 於多層 定會有 得到的 光時, 是發出 無論有 為被動 )驅動 結構非 的特色 將驅動 本的需 〇 膜所組 亮度上 透明度 其透明 綠光 機發光 的是提供一種有機發光二極體,以 種有機發光二極體,以提 同時維持綠光的透明度。 種有機發光二極體,以使 '藍(B )三原色表現皆達1227650 V. Description of the invention (2) Back of display or indication board Personal digital assistant (PDA), etc. From the viewpoint of driving mode (passive matrix), there are two types of driving modes. The passive type is often simple and therefore the cost is low. It is made directly on the panel using thin-film transistor technology. It can be used even on large scales. However, due to the traditional structure, the light is lost. Generally speaking, the light is 90%, while the organic luminosity is about 80%. In addition, the transparency of green light is about what kind of light the diode emits. Therefore, the object of the present invention is to improve the transparency of light. Still another object of the present invention is to provide one liter of red and blue light transparency, and another object of the present invention is to provide red (R) and green (G) of an organic light emitting diode to be optimized. There are light sources, mobile phones, digital cameras, and other methods. The active technology driver has a volume-inch panel such as organic light emission, where the emission directly passes through the diode. If the organic light is 87%, there will be a light-emitting diode that is a light-emitting diode. When the short and computer and flat diodes are included, the light or red light emitting diodes emitted by the glass substrate must be divided. In other words, the problematic body of the loss can be divided into the matrix, and the TV is reduced to multiple layers. When there will be light, it will emit whatever is passive.) The non-characteristics of the driving structure will drive the needs of the film. The brightness of the film group is transparent, and the transparent green light machine emits an organic light-emitting diode. Organic light emitting diodes to improve the transparency of green light while maintaining. Organic light-emitting diodes to achieve 'blue (B) three primary colors

10254twf.ptd10254twf.ptd

第7頁 1227650 五、發明說明(3) 根據上述與其它目的, 體,包括一基板、一陽極層 及一光學補償膜,其中有機 層、—藍光有機發光層,以 層是位於基板上,有機發光 置於有機發光層上。而光學 的紅光有機發光層以及藍光 之間。並且,於綠光有機發 本發明再提出一種主動 板、數個薄膜電晶體、一陽 層以及一光學補償膜,其中 光層、一藍光有機發光層, 極層是位於基板上,有機發 配置於有機發光層上,薄膜 陽極層電性相連。而光學補 紅光有機發光層以及藍光有 間。並且,於綠光有機發光 本發明由於利用配置於 板與陽極層間的光學補償膜 藍光的透明度平均可達9 〇 〇/0 機發光層下不加此層光學補、 因此’本發明能夠使有機發 表現皆達到最佳化。 為讓本發明之上述和其 本發明提出一種有機發光二極 、一陰極層、一有機發光層以 發光層包括一紅光有機發光 及一綠光有機發光層。而陽極 層則位於陽極層上。陰極層配 補償膜則配置於有機發光層中 有機發光層下的基板與陽極層 光層下不設置光補償膜。 式有機發光二極體,包括一基 極層、一陰極層、一有機發光 有機發光層包括一紅光有機發 以及一綠光有機發光層。而陽 光層則位於陽極層上。陰極層 電晶體則形成於基板上,且與 償膜則配置於有機發光層中的 機發光層下的基板與陽極層之 層下不設置光補償膜。 紅光及藍光有機發光層下的基 來改善其透明度,所以紅光及 。而且,本發明特別在綠光有 償膜,以維持綠光的透明度。 光一極體的紅、綠、藍三原色 他目的、特徵、和優點能更明Page 7 1227650 V. Description of the invention (3) According to the above and other purposes, the body includes a substrate, an anode layer, and an optical compensation film, wherein the organic layer and the blue organic light-emitting layer are located on the substrate. Luminescence is placed on the organic light emitting layer. And the optical red light emitting layer and the blue light. In addition, the present invention further proposes an active plate, a plurality of thin film transistors, an anode layer, and an optical compensation film. The light layer, a blue organic light emitting layer, and the polar layer are located on the substrate. On the organic light emitting layer, the thin film anode layer is electrically connected. The optically compensated red light organic light-emitting layer and blue light are somewhere. In addition, the organic light emitting device for green light uses an optical compensation film disposed between the plate and the anode layer, and the transparency of the blue light can reach an average of 900/0 under the organic light emitting layer. This layer does not add optical compensation, so the invention can Hair performance is optimized. In order to make the above and the present invention an organic light emitting diode, a cathode layer, and an organic light emitting layer, the light emitting layer includes a red organic light emitting layer and a green organic light emitting layer. The anode layer is on the anode layer. The cathode layer and the compensation film are arranged in the organic light-emitting layer. The substrate under the organic light-emitting layer and the anode layer are not provided with a light compensation film. The organic light emitting diode includes a base layer, a cathode layer, and an organic light emitting layer. The organic light emitting layer includes a red organic light emitting layer and a green organic light emitting layer. The solar layer is on the anode layer. The cathode layer transistor is formed on the substrate, and the compensation film is disposed under the organic light emitting layer of the organic light emitting layer and the substrate and the anode layer are not provided with a light compensation film. Red light and blue light under the organic light emitting layer to improve its transparency, so red light and. Furthermore, the present invention is particularly directed to a green light compensation film to maintain green light transparency. The red, green, and blue primary colors of the light-polar body can make its purpose, characteristics, and advantages clearer.

10254twf.ptd 第8頁 1227650 五、發明說明(4) 並配合所附圖式,作詳細 顯易懂’下文特舉較佳實施例 說明如下: t施方式 第一實施你j . 第1圖是依照本發明之—筮 ^ Α 4 M d二-立弟一實施例之有機發光二極-體的剖面不思圖。請灸昭笛1国 ^ Λ 。月,…、弟1圖,本實施例中的有機發光 一極體〇叮應用於被動式有機發光二極體中,盆姓 括-基板1〇2—陽極層104、一陰極層106中一有 層110以及-光學補償膜1G8,其中光學補償膜m 而有機發光層⑴ 光層112、一藍光有機發光層114,以及一綠光有機發光層 116 ;陽極層104之材質可以是銦錫氧化物(IT〇)、銦鋅氧 化物(ΙΖ0)、辞鋁氧化物(ΑΖ0)或氧化鋅(Ζη〇);陰極層1〇6 之材質可以是鋁、鋁/氟化鋰、鈣、鎂/銀或銀。 請繼續參照第1圖,本實施例中的有機發光二極體丨〇〇 中各層的配置係陽極層104位於基板102上,有機發光層 1 1 0則位於陽極層1 〇 4上。陰極層丨〇 6配置於有機發光層丨i Q 上。而光學補償膜1 〇 8則配置於有機發光層丨丨〇中的紅光有 機發光層112以及藍光有機發光層114下的基板1〇2與陽極 層之間。並且,於綠光有機發光層116下不可設置光學 補償膜1 0 8,以維持綠光的透明度。 另外,於本實施方法中的有機發光二極體丨〇 〇還可以 在有機發光層110與陰極層106之間加一層電子傳輸層,而 於有機發光層110朝向陽極層104的那一表面加上一層電洞10254twf.ptd Page 8 1227650 V. Description of the invention (4) In conjunction with the attached drawings, make it easy to understand in detail. 'The following is a description of the preferred embodiment. The first implementation of the method is t. According to the invention, a cross-sectional view of the organic light-emitting diode-body according to the embodiment of 筮 ^ Α 4 M d di-lit. Please moxibustion Zhao Di 1 country ^ Λ. Month, ..., Figure 1. The organic light-emitting diode in this embodiment is applied to a passive organic light-emitting diode. The substrate name is-substrate 102-the anode layer 104 and a cathode layer 106. Layer 110 and-optical compensation film 1G8, wherein the optical compensation film m and the organic light emitting layer ⑴ light layer 112, a blue light organic light emitting layer 114, and a green light organic light emitting layer 116; the material of the anode layer 104 may be indium tin oxide (IT〇), indium zinc oxide (IZ0), aluminum oxide (AZ0) or zinc oxide (Zη〇); the material of the cathode layer 106 can be aluminum, aluminum / lithium fluoride, calcium, magnesium / silver Or silver. Please continue to refer to FIG. 1. In this embodiment, the arrangement of each layer of the organic light-emitting diode 丨 00 is located on the substrate 102, and the organic light-emitting layer 110 is located on the anode layer 104. The cathode layer 6 is disposed on the organic light emitting layer i Q. The optical compensation film 108 is disposed between the red organic light-emitting layer 112 and the blue organic light-emitting layer 114 between the substrate 102 and the anode layer in the organic light-emitting layer. In addition, an optical compensation film 108 cannot be provided under the green organic light emitting layer 116 to maintain the transparency of green light. In addition, the organic light emitting diode in this embodiment method may further include an electron transport layer between the organic light emitting layer 110 and the cathode layer 106, and the surface of the organic light emitting layer 110 facing the anode layer 104 may be added. Upper hole

l〇254twf.ptd 第9頁 1227650 五、發明說明(5) 傳輪層以及一層電洞注入層。 第二實施例 當本發明應用於主動式有機發光二極體時,請見第2 A 圖與第2B圖。 第2A圖與第2B圖所示是依照本發明之一第二實施例之 主動式有機發光二極體的剖面π思圖。清蒼照弟2 A圖與弟 2B圖,於主動式有機發光二極體中包括一基板2〇2、一薄 膜電晶體220、一陽極層204、一陰極層206、一有機發光 層以及一光學補償膜208,其中光學補償膜20 8之材質可以 是氮化矽。而第2Α圖中的有機發光層是紅光及藍光有機發 光層21 2/214 ;也就是說,無論是紅光有機發光層或是藍 光有機發光層,皆適用於第2Α圖所示之結構。於第2Β圖中 的有機發光層則是綠光有機發光層2 1 6。另外,陽極層2 0 4 之材質可以是銦錫氧化物、銦辞氧化物、鋅鋁氧化物或氧 化鋅;陰極層2 0 6之材質則可包括鋁、鋁/氟化經、鈣、鎂 /銀或銀。而薄膜電晶體220則具有一閘極222、一源極/汲 極224、一通道層2 2 6以及覆蓋閘極2 22之絕緣層。此外, 還有一保護層228覆蓋薄膜電晶體220。 請繼續參照第2Α圖,主動式有機發光二極體之陽極層 204位於基板202上’紅光及藍光有機發光層212/214則位 於陽極層204上。陰極層206配置於紅光及藍光有機發光層 212/21 4上。薄膜電晶體220則形成於基板202上,且其源 極/沒極224之一端與陽極層2〇4電性相連。而光學補償膜 208則配置於紅光及藍光有機發光層212/2丨4下的基板2〇2l〇254twf.ptd Page 9 1227650 V. Description of the invention (5) The transmission layer and a hole injection layer. Second Embodiment When the present invention is applied to an active organic light emitting diode, see FIG. 2A and FIG. 2B. Figures 2A and 2B are cross-sectional views of an active organic light emitting diode according to a second embodiment of the present invention. Photograph 2A and 2B of Qing Cangzhao, the active organic light emitting diode includes a substrate 202, a thin film transistor 220, an anode layer 204, a cathode layer 206, an organic light emitting layer and an The optical compensation film 208 may be made of silicon nitride. The organic light-emitting layer in FIG. 2A is a red and blue organic light-emitting layer 21 2/214; that is, whether the red light-emitting organic layer or the blue organic light-emitting layer is applicable to the structure shown in FIG. 2A . The organic light-emitting layer in FIG. 2B is a green light-emitting organic layer 2 1 6. In addition, the material of the anode layer 204 can be indium tin oxide, indium oxide, zinc aluminum oxide, or zinc oxide; the material of the cathode layer 106 can include aluminum, aluminum / fluoride, calcium, and magnesium. / Silver or silver. The thin film transistor 220 has a gate 222, a source / drain 224, a channel layer 2 2 6 and an insulating layer covering the gate 2 22. In addition, a protective layer 228 covers the thin film transistor 220. Please continue to refer to FIG. 2A. The anode layer 204 of the active organic light emitting diode is located on the substrate 202. The red and blue organic light emitting layers 212/214 are located on the anode layer 204. The cathode layer 206 is disposed on the red and blue organic light emitting layers 212/214. The thin film transistor 220 is formed on the substrate 202, and one end of the source / inverter 224 is electrically connected to the anode layer 204. The optical compensation film 208 is disposed on the substrate 202 under the red and blue organic light emitting layers 212/2 丨 4.

12276501227650

五、發明說明(6) 與陽極層2 0 4之間,以增加紅光及藍光的透明度。 於此一實施例中,光學補償膜208可以作為键二。而且, 中覆蓋閘極2 2 2之絕緣層。 彳、電晶體2 2 2 此外’請再參照第2B圖’其中的主動式有機 系 體與第2A圖唯一的不同在於綠光有機發光層gig ° 基板2 0 2與陽極層2 0 4之間並無光學補償腺,仏、下方之 清阳l 子補1貝#以維持綠光的 為了使本發明之特徵獲得支持,請參考第3圖。 第3圖所示係光分別經由玻璃基板、破璃基板+。陽極層 以及玻璃基板+光學補償膜+陽極層透射所得之光譜與透^ 度的關係圖。請參照第3圖,於本圖中的三條曲線曰分別是 光經由玻璃基板透射、經由玻璃基板加上一層銦錫7氧化^勿 陽極層透射,以及光經由玻璃基板加一層氮化矽光學補償 膜加上銦錫氧化物陽極層所形成的結構透射所得之透明度V. Description of the invention (6) Between the anode layer and 204 to increase the transparency of red and blue light. In this embodiment, the optical compensation film 208 can be used as the key two. In addition, the insulating layer of the gate electrode 2 2 2 is covered in the middle.电, transistor 2 2 2 In addition, please refer to Figure 2B again. The only difference between the active organic system and Figure 2A is the green organic light-emitting layer gig ° between the substrate 2 0 2 and the anode layer 2 0 4 There is no optical compensation gland, and the lower part of the sun is maintained to maintain green light. To support the features of the present invention, please refer to FIG. 3. The light shown in FIG. 3 passes through the glass substrate and the broken glass substrate +, respectively. A graph of the relationship between the spectrum and transmittance of the anode layer and the transmission of the glass substrate + optical compensation film + anode layer. Please refer to Figure 3. The three curves in this figure are respectively the light transmitted through the glass substrate, the glass substrate plus a layer of indium tin 7 oxide ^ do not transmit through the anode layer, and the light through the glass substrate plus a layer of silicon nitride optical compensation Transparency of the structure formed by the film plus the anode layer of indium tin oxide

與光譜的關係圖。 X 由第3圖可知’當光直接從玻璃基板穿透時,無論是 什麼顏色的光,其透明度都約大於9 〇%。而當光從玻璃基 板加銦錫氧化物陽極層穿透時,可從光譜的範圍獲悉,在 紅光與藍光的範圍内(約6〇〇〜7〇〇 nm)的透光度約為8〇%左 右’在綠光的範圍内(約5 〇 〇 nm左右)的透光度則約為 87/。°為提昇光的透明度而於玻璃基板與銦錫氧化物陽極 層之間加上一層光學補償膜後再去測其透明度時,會發現 雖然紅光與藍光之透光度能夠由原本的80%提升至90%以 上’但是綠光的透光度卻由原本的87%降為8〇%。因此,本Diagram with spectrum. X From Fig. 3, it can be seen that 'when light directly penetrates through a glass substrate, the transparency of any color light is greater than 90%. When the light penetrates through the glass substrate plus the indium tin oxide anode layer, it can be learned from the range of the spectrum that the light transmittance in the range of red and blue light (about 600-7000 nm) is about 8 The transmittance in the range of green light (about 500 nm) is about 87 /. ° In order to improve the transparency of the light, when adding an optical compensation film between the glass substrate and the indium tin oxide anode layer, and then measuring the transparency, it will be found that although the transmittance of red and blue light can be changed from 80% of the original Raised to more than 90% ', but the green light transmittance has been reduced from 87% to 80%. So this

1227650 五、發明說明(7) 發明所採取的方案則是於有機發光二極體結構中選擇性添 加光學補償膜,以使有機發光二極體的紅(R)、綠(G)、藍 (B)三原色表現皆達到最佳化。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作各種之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。1227650 5. Description of the invention (7) The solution adopted in the invention is to selectively add an optical compensation film to the organic light-emitting diode structure, so that the red (R), green (G), and blue ( B) The performance of the three primary colors is optimized. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.

10254twf.ptd 第12頁 1227650 圖式簡單說明 第1圖是依照本發明之一第一實施例之有機發光二極 體的剖面示意圖; 第2A圖與第2B圖所示是依照本發明之一第二實施例之 主動式有機發光二極體的剖面示意圖;以及 第3圖所示係光分別經由玻璃基板、玻璃基板+陽極層 以及玻璃基板+光學補償膜+陽極層透射所得之光譜與透明 度的關係圖。 圖式標號說明 1 0 0 :有機發光二極體 102,20 2 :基板 104,204 ··陽極層 1 0 6,2 0 6 :陰極層 108,208 :光學補償膜 1 1 0 :有機發光層 1 1 2 :紅光有機發光層 1 1 4 :藍光有機發光層 116,216 :綠光有機發光層 21 2/214 :紅光及藍光有機發光層 220 薄膜電晶體 222 閘極 224 源極/汲極 226 通道層 228 保護層10254twf.ptd Page 12 1227650 Brief description of the drawings Figure 1 is a schematic cross-sectional view of an organic light emitting diode according to a first embodiment of the present invention; Figures 2A and 2B are drawings according to one of the first A schematic cross-sectional view of the active organic light emitting diode of the second embodiment; and the spectrum and transparency of the light obtained through the transmission of the glass substrate, glass substrate + anode layer, and glass substrate + optical compensation film + anode layer shown in FIG. relation chart. Explanation of reference numerals 1 0 0: Organic light emitting diodes 102, 20 2: Substrates 104, 204 ·· Anode layer 1 0 6, 2 0 6: Cathode layer 108, 208: Optical compensation film 1 1 0: Organic light emitting layer 1 1 2: Red organic light emitting layer 1 1 4: Blue organic light emitting layer 116, 216: Green organic light emitting layer 21 2/214: Red and blue organic light emitting layer 220 Thin film transistor 222 Gate 224 Source / Drain Pole 226 Channel layer 228 Protective layer

10254twf.ptd 第13頁10254twf.ptd Page 13

Claims (1)

1227650 六、申請專利範圍 1 . 一種有機發光二極體,包括: '^基板 ’ 一陽極層’位於該基板上’ 一有機發光層’位於該陽極層上’該有機發光層包括 一紅光有機發光層、一藍光有機發光層’以及一綠光有機 發光層; 一陰極層,位於該有機發光層上;以及 一光學補償膜,配置於該紅光有機發光層以及該藍光 有機發光層下的該基板與該陽極層之間。 2.如申請專利範圍第1項所述之有機發光二極體’其中 該光學補償膜之材質包括氮化矽。 3 ·如申請專利範圍第1項所述之有機發光二極體,其中 該陽極層之材質包括銦錫氧化物、銦鋅氧化物、鋅銘氧化 物、氧化鋅其中之一。 4·如申請專利範圍第1項所述之有機發光二極體,其中 該陰極層之材質包括鋁、鋁/氟化鋰、鈣、鎂/銀與銀其中 - 〇 5 ·如申請專利範圍第1項所述之有機發光二極體,其中 該有機發光層與該陰極層之間更包括一電子傳輸層。 6 ·如申請專利範圍第1項所述之有機發光二極體,其中 該有機發光層與該陽極層之間更包括一電洞注入層。 7 ·如申請專利範圍第6項所述之有機發光二極體,其中 遠有機發光層與該電洞注入層之間更包括一電洞傳輸層。 8 · —種主動式有機發光二極體,至少包括:1227650 VI. Scope of patent application 1. An organic light-emitting diode, comprising: '^ substrate'-an anode layer 'on the substrate'-an organic light-emitting layer 'on the anode layer' The organic light-emitting layer includes a red-light organic A light emitting layer, a blue organic light emitting layer 'and a green organic light emitting layer; a cathode layer on the organic light emitting layer; and an optical compensation film disposed under the red organic light emitting layer and the blue organic light emitting layer Between the substrate and the anode layer. 2. The organic light emitting diode according to item 1 of the scope of the patent application, wherein the material of the optical compensation film includes silicon nitride. 3. The organic light-emitting diode according to item 1 of the scope of patent application, wherein the material of the anode layer includes one of indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide. 4. The organic light-emitting diode according to item 1 in the scope of patent application, wherein the material of the cathode layer includes aluminum, aluminum / lithium fluoride, calcium, magnesium / silver, and silver. The organic light emitting diode according to item 1, further comprising an electron transport layer between the organic light emitting layer and the cathode layer. 6. The organic light emitting diode according to item 1 of the scope of patent application, wherein a hole injection layer is further included between the organic light emitting layer and the anode layer. 7. The organic light emitting diode according to item 6 of the scope of patent application, wherein a far hole organic light emitting layer and the hole injection layer further include a hole transporting layer. 8 · — an active organic light emitting diode, including at least: 1227650 六、申請專利範圍 一基板; 一陽極層,位於該基板上; 一有機發光層,位於該陽極層上,該有機發光層包括 一綠光有機發光層,一紅光有機發光層,以及一藍光有機 發光層; · 一陰極層,位於該有機發光層上; 複數個薄膜電晶體,形成於該基板上,且與該陽極層 電性相連;以及 一光學補償膜,配置於該紅光有機發光層以及該藍光 有機發光層下的該基板與該陽極層之間。 9 ·如申請專利範圍第8項所述之主動式有機發光二極 體,其中該光學補償膜之材質包括氮化矽。 1 0 ·如申請專利範圍第8項所述之主動式有機發光二極 體,其中該薄膜電晶體至少包括: 一閘極; 一通道層,位於該閘極上方; 一絕緣層,位於該閘極與該通道層之間,以覆蓋該閘 極;以及 一源極/汲極,位於該閘極上方之通道層2 2 6兩側。 1 1 ·如申請專利範圍第1 0項所述之主動式有機發光二極 體,其中該源極/汲極之一端與該陽極層電性相連。 12·如申請專利範圍第10項所述之主動式有機發光二極 體,其中該光學補償膜的功用包括作為該薄膜電晶體之該 絕緣層。1227650 VI. Application scope: a substrate; an anode layer on the substrate; an organic light emitting layer on the anode layer; the organic light emitting layer includes a green organic light emitting layer, a red organic light emitting layer, and a A blue organic light emitting layer; a cathode layer on the organic light emitting layer; a plurality of thin film transistors formed on the substrate and electrically connected to the anode layer; and an optical compensation film disposed on the red organic light emitting layer The light emitting layer and the substrate and the anode layer under the blue organic light emitting layer. 9. The active organic light emitting diode as described in item 8 of the scope of patent application, wherein the material of the optical compensation film includes silicon nitride. 10 · The active organic light-emitting diode according to item 8 of the scope of patent application, wherein the thin film transistor includes at least: a gate; a channel layer located above the gate; an insulating layer located at the gate Between the electrode and the channel layer to cover the gate electrode; and a source / drain electrode located on both sides of the channel layer 2 2 6 above the gate electrode. 1 1 · The active organic light emitting diode according to item 10 of the scope of patent application, wherein one end of the source / drain is electrically connected to the anode layer. 12. The active organic light emitting diode as described in item 10 of the scope of patent application, wherein the function of the optical compensation film includes the insulating layer as the thin film transistor. 10254twf.ptd 第 15 頁 1227650 六、申請專利範圍 1 3.如申請專利範圍第8項所述之主動式有機發光二極 體,其中該陽極層之材質包括銦錫氧化物。 1 4.如申請專利範圍第8項所述之主動式有機發光二極 體,其中該陰極層之材質包括鋁、鋁/氟化鋰、鈣、鎂/銀 與銀其中之一。 · 1 5.如申請專利範圍第8項所述之主動式有機發光二極 體,其中該有機發光層與該陰極層之間更包括一電子傳輸 層 。 1 6.如申請專利範圍第8項所述之主動式有機發光二極 體,其中該有機發光層與該陽極層之間更包括一電洞注入 層。 1 7.如申請專利範圍第1 6項所述之主動式有機發光二極 體,其中該有機發光層與該電洞注入層之間更包括一電洞 傳輸層。10254twf.ptd Page 15 1227650 6. Scope of patent application 1 3. The active organic light emitting diode described in item 8 of the scope of patent application, wherein the material of the anode layer includes indium tin oxide. 1 4. The active organic light-emitting diode according to item 8 of the scope of patent application, wherein the material of the cathode layer includes one of aluminum, aluminum / lithium fluoride, calcium, magnesium / silver, and silver. 1 5. The active organic light emitting diode as described in item 8 of the scope of patent application, wherein an electron transporting layer is further included between the organic light emitting layer and the cathode layer. 16. The active organic light-emitting diode according to item 8 of the scope of patent application, wherein a hole injection layer is further included between the organic light-emitting layer and the anode layer. 1 7. The active organic light emitting diode according to item 16 of the scope of patent application, wherein a hole transporting layer is further included between the organic light emitting layer and the hole injection layer. 10254twf.ptd 第16頁10254twf.ptd Page 16
TW92100473A 2003-01-10 2003-01-10 Organic light-emitting diode TWI227650B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92100473A TWI227650B (en) 2003-01-10 2003-01-10 Organic light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92100473A TWI227650B (en) 2003-01-10 2003-01-10 Organic light-emitting diode

Publications (2)

Publication Number Publication Date
TW200412817A TW200412817A (en) 2004-07-16
TWI227650B true TWI227650B (en) 2005-02-01

Family

ID=35696443

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92100473A TWI227650B (en) 2003-01-10 2003-01-10 Organic light-emitting diode

Country Status (1)

Country Link
TW (1) TWI227650B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019109258A1 (en) * 2017-12-05 2019-06-13 深圳市柔宇科技有限公司 Oled device with high color gamut

Also Published As

Publication number Publication date
TW200412817A (en) 2004-07-16

Similar Documents

Publication Publication Date Title
US8754404B2 (en) Organic light emitting diode display
KR102047230B1 (en) White organic light emitting diode and display device using the same
US20180212179A1 (en) Oled display panel and manufacture method thereof
US10103358B2 (en) OLED substrate and producing method thereof, panel, and display apparatus
US20170271418A1 (en) Oled display substrate and manufacturing method thereof and display apparatus
CN110299469B (en) Display substrate, electroluminescent display panel and electroluminescent display device
US11211574B2 (en) Light emitting device and fabrication method thereof, and electronic apparatus
US20090236976A1 (en) Organic light emitting display device
US9182784B2 (en) Double-sided emission type display device
KR20110008621A (en) Organic light emitting diode display
KR20040020673A (en) Organic electro luminescent display device and fabrication method thereof
JP2004296100A (en) Organic el device and liquid crystal display device
KR20100072653A (en) Top emission type organic electro-luminescence device and method for fabricating of the same
US20070057881A1 (en) Transflective display having an OLED region and an LCD region
KR20160095705A (en) Organic light emitting diode display
KR20180009440A (en) Organic electroluminescence display device
JP2006221178A (en) Display device
US20160126503A1 (en) Organic light-emitting diode (oled) panel, manufacturing method thereof and display device
US11302887B2 (en) Organic electroluminescent diode device having light-emitting layer disposed on electron injection layer, display panel, and manufacturing method thereof
US20070164665A1 (en) Double-sided organic electro-luminescent device
KR100722115B1 (en) Organic Electro-Luminescence Display
TWI227650B (en) Organic light-emitting diode
KR100782938B1 (en) an active matrix organic electroluminescence display and a manufacturing method of the same
JP4888467B2 (en) Display device and electronic device
KR100834341B1 (en) an active matrix organic electroluminescence display device

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent