TWI226460B - Micro-scanning mirror of phase delay line device - Google Patents

Micro-scanning mirror of phase delay line device Download PDF

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Publication number
TWI226460B
TWI226460B TW92137190A TW92137190A TWI226460B TW I226460 B TWI226460 B TW I226460B TW 92137190 A TW92137190 A TW 92137190A TW 92137190 A TW92137190 A TW 92137190A TW I226460 B TWI226460 B TW I226460B
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Taiwan
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mirror
micro
electrode
scanning
item
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TW92137190A
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Chinese (zh)
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TW200521488A (en
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Fong-Ruey Yang
Long-Sun Huang
Chen-Feng Chung
Hsueh-Ching Shih
Jian-Yuan Chen
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Ind Tech Res Inst
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Abstract

A micro-scanning mirror of a phase delay line device is disclosed, wherein the phase delay line device includes a grating for separating a low coherence light source, a lens, the micro-scanning mirror, and a double path reflective mirror. The micro-scanning mirror includes a rotatable plate having a silicon thin film of which a first metal electrode deposited on a first surface, and a T-bar at the edge; and a fixed plate having a silicon substrate deposited with at least one second metal electrode located below a second surface of the silicon film for controlling the rotatable plate. The micro-scanning mirror is used for continuously reflecting the light.

Description

1226460 玖、發明說明: 【發明所屬之技術領域】 本發明係關於一種用於調變光程差之光相延遲裝i 中之微掃瞄鏡,尤指一種適用於光通訊或光學同調斷層# 5 瞄中光相延遲裝置之微掃瞄鏡。 【先前技術】 在光學領域及光學影像應用中,掃描式的相位延遲器、 (Optical Delay Line,ODL)是干涉儀量測中必備的元件。在 10 超快光學與干涉儀(Ultrafast Optical Science and1226460 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a micro-scanning mirror used in an optical phase delay device for modulating optical path differences, and particularly to a micro-scanning mirror suitable for optical communication or optical coherence tomography # 5 Focus on the micro-scanning mirror of the optical phase delay device. [Prior technology] In the optical field and optical imaging applications, a scanning phase retarder (Optical Delay Line, ODL) is an essential component in interferometer measurement. 10 Ultrafast Optical Science and Interferometer (Ultrafast Optical Science and

Interferometry)領域,可調式的相位延遲器是一重要的功能 性元件,一項重要的應用是光學同調斷層掃描(0ptieal Coherence Tomography,OCT),係利用邁克生干涉儀 (Michelson Interferometer)的架構,其需求為超過1 kHz掃 15 描速率的高效率相位延遲器,光學同調斷層掃描為—種# 侵入式(Noninvasive)、高解析度(5-20μηι)、高靈敏度的生 物組織斷面影像技術,其發展歷史約10幾年左右,是—種 相當新穎的醫學診斷技術,OCT偵測邁克生干涉儀取樣臂 (Sample Arm)與參考臂(Reference Arm or Optical Delay 20 Line)之間干涉條紋的波包(Envelop),由於其解析度優於超 音波影像,目前在彳貞測組織病變的應用方面相當被看好。 而最常應用在人類眼底組織,其中視網膜層至脈絡膜層約 8層,總厚度約250 μπι(微米)。傳統上,若要瞭解眼底有 無病變,大部份均以「螢光眼底血管攝影(ICG)」或「眼底 1226460 ,ag)」為參考依據。不論ICG & fag,檢查結果只 疋視網财H需待3_5天才能拿到底片,拖延時間太 長。这時只有「眼底斷層掃描」能提供準確又快速的診斷 刀析、…果OCT於門診檢查時,不需要長時間散瞳等待, 病人的瞳孔只要3 α ,、,、日,丨曰 & , 主 茺mm就可以測1、掃描。針對視網膜、 :光眼、視神經等疾病以-份完整的眼底各層的斷層生理 解。ij圖,快速、簡單、易懂,又精確的提供給眼科醫師, 在門診同時間内’即可掌握病患的錢,給予即時的防範 與治療。 10 15 圖為正個OCT之架構示意圖,其使用一低同調([㈣ ⑽)寬頻光源10,通常採用紅外線波段,目的是深 八一勿、、我内°卩犄,不容易為組織所散射,該光源10經過 20分成二道光源一道光源前往參考臂(相位延遲 益)30’另-道光源前往取樣臂4〇深入生物組織,人體組 織之不同層之間(例如表皮與真皮)可以視為鏡面,取樣臂 二之光源約深入表皮以下丨_2咖,如同經過多層鏡面反 =的光取樣f 4Q之光源到達光干涉儀處與參考 、鏡面反射回來的光訊號產生干涉波包,藉由分析儀器 刀析干涉波包的貧訊可以得到組織斷面的資訊。因為細 =考臂30與取樣臂4〇之二道光源的光程差(LigM咖 祕咖叫必須在使用光源的同調長度(CGherenee 之内U產生干涉條紋,因此必須讓參考臂3 〇掃描出不同 的連只光私’才症反映取樣臂4()多層鏡面反射的光訊號。 若參考臂掃描速率過慢,要完成一個斷面的完整資訊,可 20 I226460 能長達幾個小時,不但增加醫護人員的負擔,在醫療的診 斷上不可%有患者具有如此的耐心。再者,過大的參考臂, ,紅作組凌、維護及攜帶上都甚為不便,而太大的取樣 ’除了體外部位的檢查,例如乳癌與皮膚癌的診斷,整 個取樣臂絕不可能塞人内視鏡内部,使得體内消化道病變 的檢查無法實現。 10 15 20 :另個OCT功能性延伸的技術,所謂的彩色都卜勒另 學同調斷層掃描(color Doppler 0ptical c〇herenc Tomography,CD0CT),可用來量測混濁介質的微米級^ %,例如人類視網膜的即時性(Real Time)雙向血流場,戈 =取樣臂因介質流動造成與掃描參考臂之參考光源產生 =卜勒位移(D_er Shift),因此能夠獲得流 Π流體系統主要目的在建立各式各樣流體輸送的機 :;舉凡微流道、流量開關、流量控制元件、…等等都包 都體曰的應用相當廣泛,只要有流量控制的地方 (E: a中取主要是在生醫上的應用,例如電泳 =ctr〇Pwsls)、t ㈣lectr〇〇sm〇tic)、》體混合 ixmg).·.寺,形色都卜勒光學同調斷層掃描技術可應用 在生物晶片之流體流動現象的流速分佈量測 - 在OCT的研究上光學同調斷層掃描儀的 位延遲器,因其需要高頻的掃描,所以有各式各樣為2 ;掃=率;斤改進的設計出現…最簡單的屬線性平移 式’疋由-個能夠前後來回位移的振動平台,並上㈣一 個垂直鏡面’利用此鏡面的往復運動,來得到連續的网光程In the field of Interferometry, the adjustable phase retarder is an important functional element. An important application is optical coherence tomography (OCT), which uses the architecture of the Michelson Interferometer. The requirement is a high-efficiency phase retarder with a scanning rate of more than 1 kHz. The optical coherence tomography is a #invasive (Noninvasive), high-resolution (5-20μηι), high-sensitivity biological tissue cross-section imaging technology. The development history is about 10 years or so. It is a rather novel medical diagnostic technology. OCT detects the wave packet of interference fringes between the sample arm of the Michelson interferometer (Sample Arm) and the reference arm (Reference Arm or Optical Delay 20 Line). (Envelop), because its resolution is better than that of ultrasound images, it is currently quite promising in the application of measuring tissue lesions. It is most commonly used in human fundus tissues, of which there are about 8 layers from the retinal layer to the choroid layer, with a total thickness of about 250 μm (microns). Traditionally, in order to understand whether there are lesions in the fundus, most of them are based on "fluorescent fundus angiography (ICG)" or "fundus 1226460, ag)" as a reference. Regardless of the ICG & fag, the inspection results only despise the network property H. It takes 3_5 days to get the film, the delay is too long. At this time, only "fundus tomography" can provide accurate and fast diagnostic analysis .... OCT does not need to wait for a long time when the pupil is dilated. The patient's pupil only needs 3α ,,,,,,,, & , Main 茺 mm can measure 1, scan. For the diseases of the retina, optical eye, optic nerve and other diseases, a complete physiological solution of each layer of the fundus is provided. The ij diagram is fast, simple, easy to understand, and accurately provided to the ophthalmologist. At the same time in the clinic, the patient's money can be grasped, and immediate prevention and treatment can be given. 10 15 The figure shows the architecture of a positive OCT. It uses a low-coherence ([㈣ ⑽) broadband light source 10, usually in the infrared band. The purpose is to deepen the Bayi, and within me. It is not easy to be scattered by the tissue. The light source 10 is divided into two light sources after 20, one light source goes to the reference arm (phase delay benefit) 30 ', and the other light source goes to the sampling arm 40 to penetrate into the biological tissue, and between different layers of human tissue (such as epidermis and dermis) can be seen For the mirror surface, the light source of the sampling arm 2 penetrates below the epidermis, as if the light source f 4Q has reached the optical interferometer through the multi-layer mirror reflection = light sampling f 4Q and the reference, mirror-reflected light signal generates an interference wave packet. Analytical instruments can be used to analyze the leanness of interference wave packets to obtain information about the tissue section. Because the thin = the optical path difference between the two light sources of the test arm 30 and the sampling arm 40 (LigM must be within the coherence length of the light source (CGherenee U generates interference fringes), so the reference arm 3 must be scanned out. The different optical signals reflect the light signal reflected by the 4 () multilayer mirror of the sampling arm. If the scanning speed of the reference arm is too slow, to complete the complete information of a section, 20 I226460 can be as long as several hours, not only Increasing the burden on the medical staff. In the medical diagnosis, there must be no patient with such patience. Moreover, the oversized reference arm, red crop group, maintenance and carrying are very inconvenient, and too large sampling 'except Examination of parts in vitro, such as the diagnosis of breast cancer and skin cancer, the entire sampling arm can never be plugged inside the endoscope, making the examination of gastrointestinal lesions in the body impossible. 10 15 20: Another OCT functional extension technology, The so-called Color Doppler 0ptical coherec Tomography (CD0CT) can be used to measure micron-level ^% of turbid media, such as the immediacy of the human retina. (Real Time) Two-way blood flow field, Ge = Reference light source generated by the sampling arm and the scanning reference arm due to the flow of the medium = D_er Shift, so the main purpose of obtaining a fluid flow system is to create a variety of fluids. Conveying machine: Jufan micro flow channel, flow switch, flow control element, etc. are all widely used, as long as there is a flow control place (E: a is mainly used in biomedical applications For example, electrophoresis = ctr〇Pwsls), t ㈣lectr〇〇〇m〇tic), "body mixed ixmg) ... Temple, shape Doppler optical coherence tomography technology can be applied to the flow velocity distribution of the fluid flow phenomenon of biological wafers Measurement-In the study of OCT, the bit retarder of optical coherence tomography scanner, because it requires high-frequency scanning, there are various types of 2; sweep = rate; improved design appears ... the simplest is linear Translational type '疋 by-a vibrating platform capable of back and forth displacement, and up and down a vertical mirror surface' uses the reciprocating movement of this mirror surface to obtain a continuous net optical path

8 1226460 差。壓電(Piezoelectric Transducer,PZT)驅動式,利用ρζτ 帶動一對平行鏡面中的一個鏡面,光線重複在二個靜面之 間行進,ΡΖΤ產生的微小振幅被放大為連續而可觀的光程 差。利用光柵(Grating)ll〇、透鏡(Lens)i2〇、反射鏡14〇及 5碇轉式掃描鏡130所組成的相位延遲器,可同時提供群延遲 (Group Delay)及相速延遲(Phase Delay)二種,因為光柵 及透鏡120有放大作用,掃描鏡13〇只需要很小角度的掃 ^即可達到可觀的群延遲,因此掃描鏡可以快速旋轉, 1達到快速掃描的目的,這型的相位延遲器又被稱為快速 10 掃“相位延遲器(Rapid Scanning 〇pti⑶i D也y,,請 參考圖2。也有將參考臂及取樣臂合在一起的設計。目前 ⑽时—般利用連接電控制訊號之鏡面,作為旋轉式掃 “鏡,其知描速率可達數他,但其體積龐大成本高;旋 轉讀描鏡中掃描速率最快者可以達到28版,係利用高 '氣原人,㈣裝在軸承上的鍍金方塊,鍍金部分視為一 個鏡面每轉一圈共有4個鏡面可以反射光源,而方塊轉動 速率可以雨達427000 rpm,因而掃描速率可以快到^ 6 版。對於微米級的制動器而言,因為尺寸大幅度縮小, 本身的負載施力大為提高,所以將制動器操作在共振 20 (Resonance)的條件下,對整個結構並不會影響,本發明利 用微機電系、統(Mlcroelectromechanical System, 枳όΓΓΓ術製作出來的0DL,其制動器可以將其操作在共 振的頻率,輕易的便可將掃描速率提高到數kHZ。 1226460 【發明内容】 本舍明之主要目的係在提供一種光相延遲裝置之微 掃目田鏡,其係利用微機電技術製作微米級高頻相位延遲 為,俾能提高掃描速率,且微米級的相位延遲器可以取代 5目則的大型70件,使得整部儀器更為輕巧而易於攜帶與操 ^ 〇 …、 為達成上述目的,本發明之光相延遲裝置用之微掃瞄 鏡,其中该光相延遲裝置包含一用以分光一低同調光之光 用以改、交光程差之該微掃瞄鏡、一介於該光栅與該微 帚目田鏡間來焦於該微掃瞄鏡之透鏡、與一使該低同調光沿 f路徑離開該光相延遲裝置之雙路徑反射鏡,該微掃瞄鏡 2括·一轉動電極鏡面,係為一第一表面具有一第一金屬 二極之矽薄膜,該轉動電極鏡面並具有一固定支撐軸,使 動電極鏡面以該固定支撐軸轉動,該第一金屬電極用 15 =導電累積電荷並連續地反射光源;-固定電極板,係固 2於该轉動電極平板之第二平面之一側,該固定電極板為 一表面具有至少一第二金屬電極之矽基板,該第二金屬電 極用以導電累積電荷,以控制該轉動電極鏡面之轉動。 2〇【實施方式】 , 在快速掃描相位延遲器中,,光源100進入相位延遲哭 後先打到光柵,經過光柵110分光的光束,穿過透 來焦到掃描鏡面丨30,掃描鏡i30的作一 走不同的、由i %不仃 的連、,光程,來補償取樣臂不同的光程差,光束最 1226460 後由反射鏡140反射後,依原路徑反射回去;其中在rs〇d 所產生的相位延遲為如式1與2所示: 式 1 ^=4^k 式 2 其中 5 其中/,為群速延遲(Group Delay),〇為相速延遲㈣_ ^elay) ’小)為掃描鏡的斜率,Λ為光柵的周期,々為中心 =T:j:描鏡的位置和掃描鏡轉動支點的距離,其 △ 波長的距離,其他波長與中心波長的光程差 本發明中第一金屬電極之材料並無限制 10表面具較佳反射率之全屬柑枓盔± 1 八罟疋以 鉑Up 可為金、紹、銅、銀、 ”弟-金屬電極之材料亦無限制,可為金、鋁、 銅、銀、翻、或鎳。轉動電極鏡 膜間以及固定雷麻P T弟金屬電極與石夕薄 祕Μ入中弟二金屬電極與石夕基板間可選擇性 地再已$ —金屬勒著;, 15 ^ 以牦加金屬電極黏著力,防止i 初離,例如在以金金屬電 —- 更句合一饮入p p 孟屬電極與矽溥膜間, 更w絡金屬層,以增加其 極較佳II由濺鑛或基鑛方 弟-金屬電 (lift,製程圖樣化。㈠成’亚以黃光敍刻或舉離 在微掃瞄鏡中,固定 鏡面之質量中心H 轴車父4土為延伸通過轉動電極 並/、一矽基座相連 極鏡面,此時外卢糾址+ 安用以支“轉動電 以放知目田鏡較佳為具有二 位於該支撐軸彳AM 乐一鱼屬窀極,分別 轴之兩側。固定支撐轴亦可為偏離轉動電極鏡 20 1226460 面之質量中心,此時微掃瞄鏡僅具有一第二金屬電極,且 : 第二金屬電極較佳為與第一金屬電極具有相同之形狀,可 減少黃光製程之光柵數目。微掃瞄鏡中,較佳再包含一破 璃基板以將轉動電極鏡面與固定電極板接著固定於其上, 5該玻璃基板上可再包含一具圖樣化之金屬層,係與第二金 屬電極產生電性之相連,透過此圖樣化金屬層以電性上控 制該第二金屬電極。或者,微掃瞄鏡再包含一與第二金屬 電極相連之電壓控制系統,直接輸入脈波形電壓於第二金 屬電極’控制轉動電極鏡面之最大轉動角度與轉動頻率。_ 10第二金屬電極亦可用其他方式控制其電壓之改變。 矽薄膜方面,較佳利用非等向性银刻之餘刻終止技術 形成,此蝕刻終止技術包含:p+自動停止蝕刻技術,係以 雜質重摻雜入矽晶圓中(如··硼離子濃度大於1〇1%π3), 形成一蝕刻阻擋層,以控制薄膜厚度;電化學自動停止蝕 15刻,為利用具有n型蠢晶層之?财晶圓形成之㈣接合面, 施以一反向偏壓進行蝕刻,並控制電壓降使蝕刻液僅能蝕 刻至一特定厚度範圍,亦有利用類似或其改良之技術,如:籲 光辅助電化學蝕刻停止技術⑽咖七如以 Electrochemical Etch St〇p),係利用輕摻雜型矽晶圓與 20光強度控制蝕刻率;V形槽深度尺監控,係先加工{1〇〇}矽 晶圓,使其在元件製作區以外之區域產生一系列寬度不一 之V形槽列,蝕刻時由於深度與開口寬度具有一固定關 係,在濕蝕刻矽晶圓背面時,依照被蝕穿之已知v形槽中 所具開口寬度判別矽薄膜之厚度;以及絕緣層絕緣矽晶 12 1226460 (Silicon on Insulator,SOI)停止蝕刻技術,係藉由結構層 (device layer)矽晶圓厚度決定所需矽薄膜之厚度(一般^ 幾微米〜幾十微米),在結構層(device layer)與操控層 (handle layer)矽晶圓中夾置一二氧化矽層(Si〇2)等,藉由^ ίο 刻選擇性使蝕刻液從第二表面操控層矽晶圓蝕刻至二氧化 石夕層時即停止。以上均為一般所使用之監控㈣刻石夕薄膜 厚度之監控方法。而所使用之蝕刻液一般為氫氧化鉀 (^⑽)、四甲基氫氧化銨(TMAH)、乙二胺磷苯二酚⑽p)、 氣氧化納、氫氧化娌、氫氧化絶、聯氨、或氨水等。 抑^發明所揭示的快速調變光程差的一種相位延遲 、疋由光才冊if鏡、雙路徑反射鏡及旋轉式掃描鏡所組 成’其可同時提供群延遲(G_p及相速延遲㈣咖 二種’―般的掃描鏡要達到幾kHz的掃描速率並不容 15 因易引起振動而造成不穩定,尤其為了配合即時顯像, =需要局速率的掃描。本發明之旋轉式掃描鏡利賴刪 ^衣作主要為一微米等級大小的掃描鏡面,容易操作 振的々率’使知掃描速率輕易到達幾kHz以上,並且 Ψ 4田角度大幅增力口, 口為鏡面大小是微米級,整個相位延 % σσ跟者大幅縮小。 20 為能讓貴審查委員能更瞭解本發明之 舉二較佳具體實施例說明如下。 25置之實施例中為利用微機電系統技術製作光相延遲裝 ) 罝< Μ知瞄鏡,首杏制 先氣作轉動電極鏡面:先提供一 30〇mm 13 1226460 之石夕晶圓200,其上下表面均依序沈積聊與以购,以作 為第一蝕刻罩幕層210與第二蝕刻罩幕層22〇,如圖“所 不,利用頁光微影技術塗覆光阻層23〇於第一蝕刻罩幕層 210上並定義出轉動電極鏡面之第一金屬層圖樣位置,如圖 5 3b所示;依序熱蒸鍍鉻與金以形成第一金屬層24〇,其中鉻 金屬係為增加金金屬層與Si3N42黏著力,防止金金屬層 . $J離,如圖3c所示,利用浸泡丙酮舉離(Lift_〇ff)光阻層 230,如圖3d所示;利用黃光微影技術塗覆光阻層25〇於第 一姓刻罩幕層220上並定義出轉動電極鏡面之石夕薄膜圖$ 鲁 10位置,如圖3e所示;反應性離子蝕以形成 具圖樣之第二蝕刻罩幕層220,如圖3f所示;利用黃光微影 技術塗覆光阻層260於第一蝕刻罩幕層21〇上以形成蝕刻終 止技術之v形槽深度尺監控所需之各個v形槽方框,如圖3g 所示(僅顯示其中一方框);反應性離子蝕刻以〇2與以31^ 15以形成具V幵》槽方框圖樣之第一 |虫刻罩幕層2丨〇,如圖%所 示;利用氫氧化鉀蝕刻液非等向性蝕刻該矽晶圓以形成一 厚度為14μηι之矽薄膜201,如圖3i所示;利用黃光微影技 _ 術塗覆光阻層2 7 0於第一蝕刻罩幕層2丨〇上並定義出轉動電 極鏡面之固定支撐軸202圖樣位置,如圖3j所示;反應性離 20子蝕刻Si〇2與Si3N4以形成具固定支撐軸圖樣之第一蝕刻 罩幕層210,如圖3k所示;利用電感偶合電漿蝕刻形成固定 支撐軸202以釋放鏡面,其中該固定支撐軸2〇2係連接轉動 電極鏡面於一矽基座2〇3上,如圖31所示;隨即完成轉動電 極鏡面之製作。 14 1226460 固定下電極板之製作,首先將一矽基板300之背面利用 電感偶合電漿姓刻(ICP etching)或反應性離子姓刻(rie)|虫 刻至厚度剩下265 μιη,再依圖3a〜3d之步驟製作具有第二金 屬層3 10之石夕基板3〇〇,其中石夕基板3〇〇與第二金屬層3 1 〇間 5具有一 Si〇2與Si3N4組成之蝕刻罩幕層320,該利用黃光微 影技術塗覆光阻層330於蝕刻罩幕層32〇上並定義出固定下 . 電極板之圖樣位置,如圖3m所示;反應性離子蝕刻以〇2與 S13N4以形成具圖樣之钱刻罩幕層32〇,如圖3n所示;將矽 基板300與一玻璃陽極34〇接合,如圖3〇所示;利用氫氧化 籲 10鉀蝕刻液蝕刻該矽基板300,直至剩下電極的圖樣為止,如 圖3p所不,將該轉動電極鏡面接合於玻璃陽極34〇,如圖均 斤示即凡成光相延遲裝置之微掃瞄鏡,其中該轉動電極 鏡面舁口亥固定下電極板間之距離為2〇隅。該轉動電極鏡面 之固定支撐軸偏離該轉動電極鏡面之質量中心,而固定下 電極板與轉動電極鏡面具有相同之形狀,與固定支撐軸重 直方向之微掃瞄鏡結構如圖4所示。8 1226460 Poor. Piezoelectric Transducer (PZT) driving type uses ρζτ to drive one mirror of a pair of parallel mirrors. The light repeatedly travels between the two static surfaces. The tiny amplitude generated by PZT is amplified into a continuous and considerable optical path difference. Using a phase retarder consisting of a grating (lens) 110, a lens (lens) i20, a mirror 14o, and a 5 ° swivel scanning mirror 130, both a group delay and a phase delay can be provided. ) Two types, because the grating and lens 120 have a magnifying effect, the scanning mirror 13 only needs to scan at a small angle to achieve a considerable group delay, so the scanning mirror can be rotated quickly, 1 to achieve the purpose of fast scanning, this type of The phase retarder is also called a fast 10-sweep phase retarder (Rapid Scanning OptiCDi Dy, please refer to Figure 2. There is also a design that combines the reference arm and the sampling arm. At present, it is generally used to connect The mirror surface of the control signal is used as a rotating scanning "mirror", whose scanning rate can reach several others, but its volume is large and the cost is high; the fastest scanning rate in the rotating reading mirror can reach 28 editions, which is based on the use of high-powered people. The gold-plated block mounted on the bearing, the gold-plated part is regarded as a mirror surface, and a total of 4 mirror surfaces can reflect the light source, and the rotation speed of the block can reach 427000 rpm, so the scanning rate can be as fast as ^ 6 version. For micron-sized brakes, the size is greatly reduced, and the load applied by itself is greatly increased. Therefore, operating the brake under the condition of resonance 20 (Resonance) will not affect the entire structure. The present invention uses micro-electromechanical The 0DL produced by the Mlcroelectromechanical System (枳 όΓΓΓ) technique can be operated at a resonant frequency by its brake, which can easily increase the scan rate to several kHZ. 1226460 [Abstract] The main purpose of the present invention is to Provide a micro-scanning eyepiece with optical phase delay device, which uses micro-electro-mechanical technology to produce micron-level high-frequency phase delay, which can improve the scanning rate, and the micron-level phase retarder can replace the large 70 pieces of 5 meshes. To make the entire instrument lighter and easier to carry and operate ^ 〇 ... In order to achieve the above purpose, the micro-scanning mirror used in the optical phase delay device of the present invention, wherein the optical phase delay device includes a light-splitting device with low coherence The light of light is used to change the micro-scanning mirror with a difference in optical path length, and to focus on the micro-scanning mirror between the grating and the micro-broom field lens. A lens, and a dual-path mirror that causes the low-coherence light to leave the optical phase delay device along the f-path, the micro-scanning mirror 2 includes a rotating electrode mirror surface, and a first surface has a first metal diode Silicon film, the rotating electrode mirror surface has a fixed support shaft, so that the moving electrode mirror surface rotates with the fixed support shaft, the first metal electrode uses 15 = conductive accumulated charge and continuously reflects the light source;-fixed electrode plate, fixed 2 On one side of the second plane of the rotating electrode plate, the fixed electrode plate is a silicon substrate having at least one second metal electrode on one surface, and the second metal electrode is used for conducting and accumulating charges to control the mirror surface of the rotating electrode. Turn. 20. [Embodiment] In a fast scanning phase retarder, the light source 100 enters the phase delay and first hits the grating, and the beam split by the grating 110 passes through the focal point to the scanning mirror. 30, the scanning mirror i30 Make a different, optical path with i%, to compensate for the different optical path difference of the sampling arm. After the light beam is reflected by the mirror 140 after 1226460, it reflects back according to the original path; The resulting phase delay is shown in Equations 1 and 2: Equation 1 ^ = 4 ^ k Equation 2 where 5 is /, which is the Group Delay, and 0 is the phase delay ㈣_ ^ elay) 'Small) is The slope of the scanning mirror, Λ is the period of the grating, 々 is the center = T: j: the distance between the position of the mirror and the pivot point of the scanning mirror, its distance of △ wavelength, and the optical path difference between other wavelengths and the center wavelength. There are no restrictions on the material of a metal electrode. 10 All citrus helmets with better reflectance on the surface ± 1 罟 疋 The platinum Up can be gold, Shao, copper, silver. There are no restrictions on the material of the metal electrode. Can be gold, aluminum, copper, silver, flip, or nickel. Rotate the electrode between the mirror and fixed Lei Ma PT ’s metal electrode and Shi Xi ’s thin sheet metal can be selectively removed between the second brother ’s metal electrode and Shi Xi ’s substrate—metal holding; 15 ^ to increase the adhesion of the metal electrode to prevent the initial separation of i For example, in the case of gold metal electricity --- more in one drink between the pp Monsoon electrode and the silicon film, and a metal layer to increase its extremely good II by sputtering or base ore-metal electricity ( Lift, the process pattern is changed. Huang Cheng's engraved or lifted off in the micro-scanning mirror, fixed the center of mass of the mirror surface, the axis of the axis of the H axis, 4 soil, which extends through the rotating electrode and / or a silicon base connected to the polar mirror surface, At this time, the outer shaft correction + installation support is used to "turn the electricity to put on the eyepiece mirror. It is better to have two poles on the support shaft, AM, a fish, and two sides of the shaft. The fixed support shaft can also be Deviation from the center of mass of the 1226460 plane of the rotating electrode mirror 20, at this time the micro-scanning mirror only has a second metal electrode, and: The second metal electrode preferably has the same shape as the first metal electrode, which can reduce the yellow light process. Number of gratings. In the micro-scanning mirror, it is preferable to further include a broken glass substrate to rotate the electric The polar mirror surface and the fixed electrode plate are then fixed thereon. 5 The glass substrate may further include a patterned metal layer, which is electrically connected to the second metal electrode. The patterned metal layer is electrically connected through the pattern. Control the second metal electrode. Alternatively, the micro-scanning mirror further includes a voltage control system connected to the second metal electrode, and directly inputs the pulse waveform voltage to the second metal electrode to control the maximum rotation angle and rotation frequency of the rotating electrode mirror surface. _ 10 The voltage of the second metal electrode can also be controlled by other methods. For silicon thin films, it is better to use the anisotropic silver etch-off-time termination technology. This etching termination technology includes: p + automatic stop etching technology. Impurities are heavily doped into silicon wafers (eg, boron ion concentration is greater than 10 %% π3) to form an etch stop layer to control the thickness of the film; electrochemical etching stops automatically for 15 etches in order to use n-type stupid crystals Layer of it? We use a reverse bias to etch the plutonium junction surface formed by the wafer, and control the voltage drop so that the etchant can only etch to a specific thickness range. There are also similar or improved technologies such as: light assist Electrochemical etch stop technology (such as Electrochemical Etch Stoop), which uses a lightly doped silicon wafer and 20 light intensity to control the etching rate; V-groove depth scale monitoring, first processing {1〇〇} silicon The wafer makes a series of V-shaped groove arrays with different widths in the area outside the component fabrication area. Since the depth has a fixed relationship with the opening width during etching, the back of the silicon wafer is wet-etched according to the It is known that the width of the opening in the V-shaped groove is used to determine the thickness of the silicon film; and the insulating layer 12 1226460 (Silicon on Insulator (SOI)) stop etching technology is determined by the thickness of the device layer silicon wafer The thickness of the silicon film is required (generally several micrometers to several tens of micrometers), and a silicon dioxide layer (SiO2) is interposed in the silicon layer of the device layer and the handle layer. ^ ίο Selective etching I.e., the etching liquid from the second stop surface of the control layer to the silicon wafer evening stone dioxide layer. The above are the commonly used methods to monitor the thickness of the engraved Shixi film. And the etching solution used is generally potassium hydroxide (^ ⑽), tetramethylammonium hydroxide (TMAH), ethylenediamine phosphorous benzenediol (p), sodium oxide, hafnium hydroxide, hydroxide, hydrazine , Or ammonia. A type of phase delay for fast modulation of the optical path difference disclosed by the invention, which is composed of an optical mirror, a two-path mirror, and a rotating scanning mirror, which can simultaneously provide group delay (G_p and phase speed delay). The two types of scanning mirrors can reach a scanning rate of several kHz, which is not tolerable. 15 Instability is likely to be caused by vibration, especially in order to cooperate with real-time development. = Local-speed scanning is required. The rotary scanning mirror of the present invention is advantageous Lai Chi is mainly a one-micron-sized scanning mirror, which is easy to operate. The scan rate can easily reach more than a few kHz, and the angle of the field is greatly increased. The size of the mirror is micron. The overall phase delay% σσ is greatly reduced. 20 In order to allow your reviewers to better understand the second preferred embodiment of the present invention, the following description is provided. In the 25th embodiment, the optical phase delay device is manufactured using MEMS technology. ) 罝 知 sighting mirror, the first to make a rotating electrode mirror surface: first provide a 300mm 13 1226460 Shixi wafer 200, the upper and lower surfaces are sequentially deposited and purchased as the first The engraved mask layer 210 and the second etched mask layer 22 are shown in the figure "No. The photoresist layer 23 is applied on the first etched mask layer 210 using the page light lithography technology and defines the mirror surface of the rotating electrode. The pattern position of the first metal layer is shown in FIG. 5 3b; chromium and gold are sequentially thermally evaporated to form the first metal layer 24o, where the chromium metal is to increase the adhesion between the gold metal layer and Si3N42 to prevent the gold metal layer. $ As shown in FIG. 3c, the photoresist layer 230 is lifted off by immersion in acetone, as shown in FIG. 3d. The photoresist layer 25 is coated with the yellow lithography technique to cover the curtain layer with the first name. The position of the Shi Xi film on the rotating electrode mirror is defined on 220, as shown in Figure 3e; reactive ion etching to form a patterned second etching mask layer 220, as shown in Figure 3f; using yellow light lithography The photoresist layer 260 is technically coated on the first etch mask layer 21 to form each v-groove box required for monitoring the v-groove depth scale of the etch stop technology, as shown in FIG. 3g (only one of the boxes is shown) ); Reactive ion etching with 〇2 and 31 ^ 15 to form the first with V 幵 "groove block pattern | insect engraving Curtain layer 2 丨 〇, as shown in Fig.%; The silicon wafer is anisotropically etched with a potassium hydroxide etchant to form a silicon film 201 with a thickness of 14 μηι, as shown in FIG. 3i; using yellow light lithography technique Coat a photoresist layer 2 70 on the first etching mask layer 2 and define the pattern of the fixed support shaft 202 of the rotating electrode mirror surface, as shown in Figure 3j. Reactive ionization etching of Si 2 and Si 3 N 4 A first etching mask curtain layer 210 with a pattern of a fixed support shaft is formed, as shown in FIG. 3k; a fixed support shaft 202 is formed by inductively coupled plasma etching to release the mirror surface, wherein the fixed support shaft 202 is connected to the rotating electrode mirror surface On a silicon base 203, as shown in FIG. 31; the fabrication of the mirror surface of the rotating electrode is completed. 14 1226460 For the production of the fixed lower electrode plate, firstly, the back of a silicon substrate 300 is etched by inductively coupled plasma (ICP etching) or reactive ion (rie) | insect etched to a thickness of 265 μιη, and then according to the figure Steps 3a to 3d are used to fabricate a lithographic substrate 300 having a second metal layer 3 10, in which the lithographic substrate 300 and the second metal layer 3 1 10 have an etching mask composed of Si02 and Si3N4. Layer 320, which uses a yellow light lithography technology to apply a photoresist layer 330 on the etching mask layer 32 and defines a fixed position. The pattern position of the electrode plate is shown in FIG. 3m; reactive ion etching is performed with 〇2 and S13N4 to A patterned engraved mask layer 32 is formed, as shown in FIG. 3n; a silicon substrate 300 is bonded to a glass anode 34o, as shown in FIG. 3; and the silicon substrate 300 is etched with an etching solution of 10 potassium hydroxide. Until the pattern of the electrode is left, as shown in FIG. 3p, the rotating electrode mirror surface is bonded to the glass anode 34. As shown in the figure, the micro-scanning mirror of the optical phase delay device is shown, in which the rotating electrode mirror surface The distance between the lower electrode plates fixed at the mouth of the mouth was 20 mm. The fixed support axis of the rotating electrode mirror surface is deviated from the center of mass of the rotating electrode mirror surface, and the fixed electrode plate has the same shape as the rotating electrode mirror surface, and the structure of the micro-scanning mirror in the direction perpendicular to the fixed support shaft is shown in FIG. 4.

貫施例2 20 m在ί實施例中,微掃猫鏡之製作流程與實施例1相 =頁中光製程酬具圖樣不同。-為在轉動電㈣ η: j利用頁光微影技術塗覆光阻層27(}於第一袭 質量中心。、°一兄面之固疋支撐軸202通過轉動電極鏡S 、^ —為在固定下電極板之製作圖3b中,利用 15 1226460 =微影技術塗覆光阻層230純刻罩幕層上並定義 门屬層圖樣位置時,該第二金|層為對稱動: 固定支撐軸之二電極,與固定支縣重直 結構如圖5所示。 心倣卸目田鏡 5 而舉例而已,本發明所 圍所述為準,而非僅限 上述實施例僅係為了方便說明 主張之權利範圍自應以申請專利範 於上述實施例。Example 2 20 m In the embodiment, the manufacturing process of the micro-scanning cat mirror is different from that in the first embodiment. -In order to apply the photoresist layer 27 (} to the first center of mass by using the photolithography technique at the rotating electrode 、, the solid support shaft 202 of the same surface is rotated by rotating the electrode mirror S, ^- In the fabrication of the fixed lower electrode plate, as shown in Figure 3b, when 15 1226460 = lithography technology is used to coat the photoresist layer 230 on the purely engraved mask curtain layer and define the gate layer pattern position, the second gold layer is symmetrical: fixed The structure of the two electrodes supporting the shaft and the straightening structure of the fixed support are shown in Fig. 5. The example of the heart-shaped imitation of the eyepiece mirror 5 is only taken as an example, and the present invention is not limited to the above embodiments for convenience only. The scope of the claimed right should be based on the above-mentioned embodiments by applying for a patent.

L圖式簡單說明】 10圖1係光學同調斷層掃描之架構示意圖。 圖2係相位延遲器之架構示意圖。 圖3a〜3q係本發明之微掃瞄鏡一較佳實施例之示意圖。 圖4係本發明之微掃瞄鏡 圖5係本發明之微掃瞄鏡 15 【圖號說明】 10 低同調寬頻光20 源 40 取樣臂 50 100 光源 110 130 掃描鏡 140 200 碎晶圓 201 203 矽基座 210 第一蝕刻罩幕220 一較佳實施例之另一側視圖。 另一較佳實施例之側視圖。Brief description of L scheme] Fig. 1 is a schematic diagram of the architecture of optical coherence tomography. Figure 2 is a schematic diagram of the structure of a phase retarder. 3a to 3q are schematic diagrams of a preferred embodiment of the micro-scanning mirror of the present invention. Fig. 4 is a micro-scanning mirror of the present invention Fig. 5 is a micro-scanning mirror of the present invention 15 [Illustration of the drawing number] 10 Low-coherence broadband light 20 Source 40 Sampling arm 50 100 Light source 110 130 Scanning mirror 140 200 Broken wafer 201 203 The silicon substrate 210 is another side view of the first etching mask 220 in a preferred embodiment. Side view of another preferred embodiment.

分光鏡 30 參考臂 分析儀器 光柵 反射鏡 120 透鏡 矽薄膜 202 固定支撐軸 第二蝕刻罩幕 16 1226460 層 層 230 光阻層 240 第一金屬層 250光阻層 260 光阻層 270 光阻層 300 矽基板 310 第二金屬層 320蝕刻罩幕層 330 光阻層 340 玻璃陽極 17Beamsplitter 30 Reference arm analysis instrument Grating mirror 120 Lens silicon film 202 Fixed support shaft Second etching mask 16 1226460 Layer 230 Photoresist layer 240 First metal layer 250 Photoresist layer 260 Photoresist layer 270 Photoresist layer 300 Silicon Substrate 310 Second metal layer 320 Etching mask layer 330 Photoresist layer 340 Glass anode 17

Claims (1)

1226460 拾、申請專利範圍: 種光相延遲裝置用之微知目苗鏡,其中該光相延遲 裝置包含一用以分光一低同調光之光栅、用以改變光程差 ,該微掃瞄鏡、一介於該光柵與該微掃瞄鏡間聚焦於該微 5知=鏡之透鏡、與一使該低同調光沿原路捏離開該光相延 遲裝置之雙路徑反射鏡,該微掃瞄鏡包括: -轉動電極鏡面,係、為一第一表面具有一第一金屬電 極之矽薄膜’該轉動電極鏡面並具有一固定支撐軸,使該 轉動電極鏡面以該固定支擇轴轉動,該第一金屬電極用以 10導電累積電荷並連續地反射光源; 固疋電極板,係固定於該轉動電極平板之第二平面 之側,邊固定電極板為一表面具有至少一第二金屬電極 之夕基板,该第二金屬電極用以導電累積電荷,以控制該 轉動電極鏡面之轉動。 15 2·如申請專利範圍第1項所述之微掃瞄鏡,其中該第 至屬電極為金、I呂、銅、銀、鉑、或鎳。 一 3·如申請專利範圍第1項所述之微掃瞄鏡,其中該第 孟屬私極為金、鋁、銅、銀、鉑、或鎳。 “ 士申叫專利範圍第1項所述之微掃瞄鏡,其中該轉 20動電極鏡面之該第一金屬電極與該石夕薄膜間’以及該固定 電極板之該第二金屬電極與該石夕基板間更包含一金屬黏著 18 1226460 定支專利範圍第1項所述之微㈣鏡,其中該固 軸延伸通過該轉動電極鏡面之質量中心,並與一石夕 土上目連接,用以支撐該轉動電極鏡面。 5 10 15 20 —6.如申請專利範圍第5項所述之微掃猫鏡,其中該 定電極板具有二第二金屬電極’分別位於該支撐軸之兩側。 ^ 7.如申請專利範圍第1項所述之微掃瞄鏡,其中該固 定支撐軸偏離該轉動電極鏡面之質量中心,而該固定電極 板具有一第二金屬電極。 8·如申請專利範圍第7項所述之微掃瞄鏡,其中該第 一金屬電極與該第二金屬電極具有相同之形狀。 _ 9·如申請專利範圍第1項所述之微掃瞄鏡,其中更包 含一電壓控制系統,與該等第二金屬電極相連,以輸入電 壓於該等第二金屬電極,用以控制該轉動電極鏡面之轉動 角度與轉動頻率。 10·如申請專利範圍第1項所述之微掃瞄鏡,其中該石夕 薄膜係利用非等向性蝕刻之蝕刻終止技術形成。 11 ·如申請專利範圍第1 〇項所述之微掃目苗鏡,其中該颠 刻終止技術為P+自動停止蝕刻技術、電化學自動停止蝕 刻、光輔助電化學蝕刻停止技術(Photo_Assisted Electrochemical Etch Stop)、V形槽深度尺監控、或絕緣層 絕緣石夕晶(Silicon on Insulator,SOI)停止钱刻技術。 12·如申請專利範圍第1〇項所述之微掃瞄鏡,其中該钱 刻終止技術所使用之蝕刻液為氫氧化鉀(KOH)、四甲基氣 19 1226460 氧化銨(ΤΜ AH)、乙二胺磷苯二酚斤0?)、氫氧化鈉、氫氧 化鋰、氫氧化鉋、聯氨、或氨水。 13 ·如申清專利範圍第1項所述之微掃目苗鏡,其中該第 一與第二金屬電極係由濺鍍或蒸鍍方式形成,並以黃光蝕 5 刻或舉離(lift-off)製程圖樣化。 I4·如申請專利範圍第1項所述之微掃瞄鏡,其中該微 知瞄鏡更包含一玻璃基板以將該轉動電極鏡面與該固定電 極板接著固定於其上。 201226460 Scope of application and patent application: Microscope eyepiece lens for optical phase delay device, wherein the optical phase delay device includes a grating for splitting a light with a low coherence, and for changing the optical path difference, the microscanning mirror A micro-scanning lens that focuses on the micro-mirror between the grating and the micro-scanning mirror, and a dual-path mirror that causes the low-homology light to pinch away from the optical phase delay device along the original path; The mirror includes:-a rotating electrode mirror surface, which is a silicon film having a first metal electrode on a first surface; the rotating electrode mirror surface has a fixed support shaft, and the rotating electrode mirror surface rotates on the fixed support axis; The first metal electrode is used for 10 conductively accumulated charges and continuously reflects the light source; the fixed electrode plate is fixed on the side of the second plane of the rotating electrode plate, and the fixed electrode plate is a surface having at least one second metal electrode on one surface. On the substrate, the second metal electrode is used for conducting and accumulating charges to control the rotation of the mirror surface of the rotating electrode. 15 2. The micro-scanning mirror according to item 1 in the scope of the patent application, wherein the subordinate electrode is gold, copper, copper, silver, platinum, or nickel. -3. The micro-scanning mirror as described in item 1 of the scope of the patent application, wherein the private metal is gold, aluminum, copper, silver, platinum, or nickel. "Shi Shen called the micro-scanning mirror described in item 1 of the patent scope, wherein the first metal electrode and the Shi Xi film between the 20-rotating electrode mirror surface and the second metal electrode of the fixed electrode plate and the The Shi Xi substrates further include a metal adhesion mirror as described in item 1 of the fixed range patent 18 1226460. The fixed shaft extends through the center of mass of the mirror surface of the rotating electrode, and is connected to a Shi Xi soil on the eye. Support the mirror surface of the rotating electrode. 5 10 15 20 —6. The micro-scanning cat mirror as described in item 5 of the patent application scope, wherein the fixed electrode plate has two second metal electrodes, which are respectively located on both sides of the support shaft. ^ 7. The micro-scanning mirror according to item 1 of the scope of patent application, wherein the fixed support axis is offset from the center of mass of the mirror surface of the rotating electrode, and the fixed electrode plate has a second metal electrode. The micro-scanning mirror according to item 7, wherein the first metal electrode and the second metal electrode have the same shape. _9. The micro-scanning lens according to item 1 of the patent application scope, which further includes a voltage Control System Is connected to the second metal electrodes, and an input voltage is applied to the second metal electrodes to control the rotation angle and the rotation frequency of the mirror surface of the rotating electrode. 10. Microscanning as described in item 1 of the scope of patent application Mirror, in which the Shi Xi film is formed by using an anisotropic etching stop technique. 11 · The micro-scanning mirror as described in item 10 of the patent application scope, wherein the inversion termination technique is P + automatic stop etching Technology, automatic electrochemical etch stop, Photo_Assisted Electrochemical Etch Stop, V-groove depth gauge monitoring, or Silicon on Insulator (SOI) insulation stop engraving technology. 12 · The micro-scanning mirror as described in item 10 of the scope of patent application, wherein the etching solution used in the money-cutting technique is potassium hydroxide (KOH), tetramethyl gas 19 1226460 ammonium oxide (TM AH), ethylene oxide Aminophosphoresorcinol 0?), Sodium hydroxide, lithium hydroxide, hydrogen hydroxide planer, hydrazine, or ammonia. 13-The micro-scanning microscope as described in item 1 of the scope of patent application, wherein the first One and first The two-metal electrode is formed by sputtering or vapor deposition, and is patterned by a 5 photoetching or lift-off process. I4. The micro-scanning mirror according to item 1 of the scope of patent application, wherein The microscope sight glass further includes a glass substrate to fix the rotating electrode mirror surface and the fixed electrode plate thereon.
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