1226427 玖、發明說明： 【明戶斤屬】 發明領域 本發明係關於一種尺寸測定及尺寸測定裝置，特別是 5關於一種測定LCD基板與半導體晶圓等之各種基板的配線 尺寸之尺寸測定及尺寸測定裝置。 發明背景 LCD(Liquid Crystal Display:液晶顯示裝置）基板與 10 PDP(電漿顯示面板(Plasma Display Panel))等之FPD(平板顯 示器（Flat Panel Display))、及半導體晶圓等之各種基板、以 及使用於該等顯示器之微影成像術之遮罩基板等，係使用 蒸鍍、蝕刻等之膜製造技術製成。但是，藉此，針對形成 於基板上之配線圖案（以下將配線圖案稱為圖案），在製造期 15 間及製造的最後步驟中有必要判定其良否。此乃為了使不 良品不會流至最後步驟所需之必要手段。為此，有必要測 定所形成之圖案之尺寸與形成位置是否位於一定的範圍 内。 另外，測定點係對於在基板上以經驗選擇之多數圖案 20 進行，且在製品為新開發時，其測定的點數也會變多’由 於隨著製品的製作數變多且必要之測定點係靠經驗來漸漸 了解，所以變成要以較少之測定點數來測定。 而且，在測定形成於基板上之圖案之尺寸等之裝置 中，習知之測定方法包括藉由利用顯微鏡的反射照明’由 1226427 圖案的上面照射照明，將由測定對象物像所反射之光經由 光學顯微鏡（以下稱為顯微鏡)並藉攝影裝置進行攝影，由所 攝得之反射光的影像信號的亮度成分檢測圖案上部及下部 的位置，測定圖案的線寬度與邊緣部的錐形（例如，特開平 5 10-082616號公報）。在此，所謂圖案的上部，係指測定對象 的圖案的段差之最高平坦部，所謂圖案的下部，係指沒有 測定對象之圖案之部分（且形成圖案之部分，亦即稱為基礎 圖案）。 習知之圖案的尺寸測定裝置係以第1圖及第2圖來說 10 明。第1圖為用以說明具有習知之顯微鏡與攝影裝置之尺寸 測定裝置的構成之圖。 第1圖之尺寸測定裝置，係以二次元傳感器（在本例為 電視攝影機103)攝影由顯微鏡101所取得之試料102之像， 並將其攝入測定部104内之晝面記憶體，由晝面記憶體内之 15 亮度位準資料求得尺寸。 在第1圖中，藉顯微鏡101的反射照明，將載置於顯微 鏡101的試料台上之試料102以電視攝影機103攝影。電視攝 影機103係將攝影之試料之影像變換成影像信號，並輸出至 測定部104。測定部104係將輸入之影像信號作影像處理， 20 並將處理結果輸出至影像監視器6。 第2圖為顯示於第1圖之尺寸測定裝置之影像監視器6 之測定晝面106與測定晝面106内之攝影機影像顯示區域 107之顯示例之圖。 若藉顯微鏡1 〇 1的反射照明與電視攝影機10 3攝影試料 1226427 102，則在顯示於影像監視器6之測定晝面106之攝影機影像 顯示區域107，可以得到如第3圖所顯示之反射照明時之影 像。 第3圖係使用遮罩基板的圖案（玻璃基板上之鉻蒸鍍圖 5 案）作為試料102，顯示其圖案的表面之反射照明時之測定 影像之圖。 在反射照明時，光由上面照射試料，攝影來自試料的 反射光。若為試料形成於玻璃基板上之鉻蒸鍍圖案時，鉻 反射率較高，故射入顯微鏡的光量較多，不過在玻璃部分， 10 由於幾乎全透過，所以反射率較低，射入顯微鏡之光量較 少。另外，即使形成鉻圖案，由於在錐形部分反射光傾斜 地射出，所以射入顯微鏡之光量變少。又，白的部分(鉻圖 案的上面平坦部）的寬度在第3圖之例為5μτη。 顯示於第3圖之試料102之影像，係表示試料102的一部 15 之圖案之放大之影像，白底部301係表示鉻的配線圖案部 分，黑底部302係表示沒有圖案之部分，也就是基板的透明 玻璃部分。303係用以測定圖案部分301的尺寸之基準線並 可依需要適度移動。在該狀態下，在測定畫面6確認後，在 影像處理部104掃描取得之影像之基準線303的部分，表示 20 該掃描結果之亮度信號之濃度分布則顯示於第5圖。亦即， 第5圖係顯示針對取得之影像掃描相當於攝影機影像顯示 區域107的基準線303之像素部分時之亮度濃度分布（亮度 分布）。 在第5圖中，橫軸為畫面記憶體之區域，且例如1區域 1226427 相當於1像素。該最大值N係與水平方向的像素數相對應。 縱軸係表示亮度。另外，以白底部301的部分作為中心且僅 顯示一部份。在該亮度分布曲線中，若以最高亮度為 100%(鉻圖案的上面平坦部分之亮度）且最低亮度為0%(透 5 明玻璃部分之亮度）時，由第1區域朝向N區域，在亮度增加 之方向，以亮度形成中間50%之區域為邊緣部Li*。另外，在 亮度減少之方向，以亮度形成中間50%之區域為邊緣部 Rr。該邊緣部Lr與邊緣部Rr間之線寬度尺寸Wr，係可以藉 下式求得。在此，N為自然數，且掃描之1個像素相當於1 10 區域。1226427 发明 Description of the invention: [Minghujin] Field of the invention The present invention relates to a size measurement and size measurement device, in particular 5 to a size measurement and size measurement of wiring sizes of various substrates such as LCD substrates and semiconductor wafers Determination device. BACKGROUND OF THE INVENTION Various substrates such as LCD (Liquid Crystal Display) substrates, FPD (Flat Panel Display) such as 10 PDP (Plasma Display Panel), and semiconductor wafers, and Mask substrates for lithography used in these displays are made using film manufacturing techniques such as evaporation and etching. However, with this, it is necessary to determine the goodness of the wiring pattern (hereinafter referred to as a pattern) formed on the substrate during the manufacturing period and in the final step of manufacturing. This is necessary to prevent the defective product from flowing to the last step. For this reason, it is necessary to determine whether the size and formation position of the formed pattern are within a certain range. In addition, the measurement points are performed on the majority of patterns 20 selected empirically on the substrate, and when the product is newly developed, the number of measured points will also increase. It is gradually learned through experience, so it has to be measured with fewer measurement points. Furthermore, in a device for measuring the size and the like of a pattern formed on a substrate, a conventional measurement method includes illuminating the top surface of a 1226427 pattern by reflecting illumination using a microscope, and passing light reflected from the object image to be measured through an optical microscope. (Hereinafter referred to as a microscope) to take pictures with a photographing device, and detect the positions of the upper and lower portions of the pattern from the brightness components of the image signal of the reflected light captured, and measure the line width of the pattern and the taper of the edge portion (for example, 5 Gazette No. 10-082616). Here, the upper part of the pattern refers to the highest flat part of the step of the pattern of the measurement target, and the lower part of the pattern refers to the part where the pattern is not measured (and the part forming the pattern, also referred to as the basic pattern). The conventional pattern sizing device will be described with reference to Figs. 1 and 2. Fig. 1 is a diagram for explaining the structure of a dimensional measuring device having a conventional microscope and photographing device. The sizing device shown in FIG. 1 uses a two-dimensional sensor (a television camera 103 in this example) to take an image of the sample 102 obtained by the microscope 101, and take the image of the sample 102 into the day-surface memory in the measurement unit 104. Dimensions were obtained from 15 brightness level data in the diurnal memory. In FIG. 1, the sample 102 mounted on the sample stage of the microscope 101 is photographed by a television camera 103 by the reflected illumination of the microscope 101. The television camera 103 converts the image of the photographed sample into an image signal and outputs it to the measurement unit 104. The measurement section 104 performs image processing on the input image signal, and outputs the processing result to the image monitor 6. FIG. 2 is a diagram showing a display example of the measurement day surface 106 and the camera image display area 107 in the measurement day surface 106 of the image monitor 6 of the size measuring device of FIG. 1. If the reflected illumination of the microscope 1 〇1 and the photographic sample 1226427 102 of the television camera 10 3 are used, the reflected image illumination shown in FIG. 3 can be obtained in the camera image display area 107 of the measuring day 106 displayed on the image monitor 6 The image of time. Fig. 3 is a diagram of a measurement image when the pattern of the mask substrate (chromium vapor deposition on a glass substrate) is used as the sample 102 to reflect the illumination of the surface of the pattern. In reflective lighting, light illuminates the sample from above, and photographs the reflected light from the sample. In the case of a chromium deposition pattern formed on a glass substrate for a sample, the reflectance of chromium is high, so the amount of light that enters the microscope is large. However, since the glass portion is almost completely transmitted, the reflectance is low, so it enters the microscope. There is less light. In addition, even if a chrome pattern is formed, the reflected light is emitted obliquely at the tapered portion, so that the amount of light entering the microscope is reduced. The width of the white portion (the upper flat portion of the chromium pattern) is 5µτη in the example shown in FIG. 3. The image of sample 102 shown in Figure 3 is an enlarged image of a 15 pattern of sample 102. The white bottom 301 indicates the chromium wiring pattern portion, and the black bottom 302 indicates the unpatterned portion, which is the substrate. Of transparent glass. 303 is a reference line for measuring the size of the pattern portion 301 and can be moved appropriately as needed. In this state, after the measurement screen 6 is confirmed, the portion of the reference line 303 of the acquired image is scanned by the image processing unit 104, and the concentration distribution of the luminance signal indicating the scanning result is shown in FIG. That is, Fig. 5 shows the luminance density distribution (brightness distribution) when the pixel portion corresponding to the reference line 303 of the camera image display area 107 is scanned for the acquired image. In Fig. 5, the horizontal axis is the area of the screen memory, and for example, 1 area 1226427 is equivalent to 1 pixel. This maximum value N corresponds to the number of pixels in the horizontal direction. The vertical axis indicates brightness. In addition, a portion with a white bottom 301 is the center and only a portion is displayed. In this brightness distribution curve, if the highest brightness is 100% (the brightness of the flat part above the chromium pattern) and the lowest brightness is 0% (the brightness of the transparent glass part), the first area is oriented toward the N area. In the direction of the increase in brightness, the area where the brightness is formed in the middle 50% is the edge portion Li *. In addition, in the direction in which the brightness is reduced, a region with a brightness of 50% in the middle is defined as the edge portion Rr. The line width dimension Wr between the edge portion Lr and the edge portion Rr can be obtained by the following formula. Here, N is a natural number, and one pixel scanned corresponds to a 1 10 area.
Wr=(Rr-Lr)xC ……式（1) 在此，C為補正係數，且測定已知之樣本以預先求得補 正係數。 另外，若以顯微鏡101之透過照明與電視攝影機103攝 15 影試料102，則在測定晝面106之攝影機影像顯示區域107， 可以得到如顯示於第4圖之透過照明時之影像。第4圖為使 用與前述之反射照明相同者作為試料102，由試料102的下 側照射之照明光透過試料102，通過顯微鏡101顯示攝影之 圖案的表面之測定影像。 20 在第4圖中，黑底部401顯示鉻的配線圖案部分，白底 部402顯示透明玻璃，在顯示於第4圖之影像中，若與第5圖 說明相同地測定基準線303上之亮度的濃度分布，則成為第 6圖所顯示者。另外，以黑底部401的部分為中心且僅顯示 一部份，例如1區域相當於1像素。該最大值N係與水平方向 1226427 的像素數相對應。 在透過照明時，光由下面照射試料，攝影來自試料的 透過光。若為試料形成於玻璃基板上之鉻蒸鍍圖案時，鉻 透過率不佳，故射入顯微鏡的光量雖幾乎為〇，不過在玻璃 5 部分由於幾乎全透過，所以射入顯微鏡之光量較多。另外 即使形成鉻圖案，由於在錐形部分反射光傾斜地射出，所 以射入顯微鏡之光量變少。又，黑的部分（鉻圖案的下面） 的寬度在第4圖之例為6μιη。 在該狀態下，掃描以影像處理部104取得之影像之基準 10 線303之部分。第6圖係顯示該掃描的結果之亮度信號的濃 度分布者。亦即，第6圖係顯示第4圖之測定影像的基準線 303上之亮度分布之圖，且橫軸為晝面記憶體之區域，縱軸 為亮度。 在第6圖的情形中，第4圖之基準線303上之亮度分布， 15 係與第5圖所顯示者相反，最高亮度100%為透明玻璃部的 部分之亮度，最低亮度0%為鉻圖案的上面部的部分之亮 度。此乃藉反射光或透過光使亮度的濃度分布反轉之故。 因此，由第1區域朝向Ν區域，在亮度減少之方向，以 亮度形成中間50%之區域為邊緣部Lt，且在亮度增加之方 20 向，以亮度形成中間50%之區域為邊緣部Rt。 而且，若如前述之式（1)表示，則藉式(2)由邊緣部Lt與 邊緣部Rt可以求得底部的線寬度尺寸Wt。Wr = (Rr-Lr) xC …… Equation (1) Here, C is the correction coefficient, and a known sample is measured to obtain the correction coefficient in advance. In addition, if the transmission lighting of the microscope 101 and the video camera 102 are taken by the television camera 103, the camera image display area 107 of the day surface 106 can be measured to obtain an image as shown in FIG. 4 when the lighting is transmitted. Fig. 4 shows a measurement image using the same reflection illumination as the sample 102, and the illumination light irradiated from the lower side of the sample 102 is transmitted through the sample 102, and the photographed pattern surface is displayed by the microscope 101. 20 In Figure 4, the black bottom portion 401 shows the chromium wiring pattern portion, and the white bottom portion 402 shows the transparent glass. In the image shown in Figure 4, if the brightness on the reference line 303 is measured as described in Figure 5, The concentration distribution is shown in FIG. 6. In addition, only a part is displayed around the part of the black bottom 401, for example, 1 area is equivalent to 1 pixel. The maximum value N corresponds to the number of pixels in the horizontal direction of 1226427. When transmitting illumination, light illuminates the sample from below, and photographs the transmitted light from the sample. In the case of a chromium vapor deposition pattern formed on a glass substrate with a sample, the transmittance of chromium is not good, so although the amount of light entering the microscope is almost 0, since the entire part of the glass 5 is transmitted, the amount of light entering the microscope is large. . In addition, even if a chrome pattern is formed, the reflected light is emitted obliquely at the tapered portion, so that the amount of light entering the microscope is reduced. The width of the black portion (under the chrome pattern) is 6 μm in the example in FIG. 4. In this state, a portion of the reference 10 line 303 of the image obtained by the image processing section 104 is scanned. Fig. 6 shows the intensity distribution of the luminance signal as a result of the scan. That is, Fig. 6 is a diagram showing the brightness distribution on the reference line 303 of the measurement image in Fig. 4, and the horizontal axis is the area of the day-plane memory, and the vertical axis is the brightness. In the case of Figure 6, the brightness distribution on the reference line 303 of Figure 4 is 15 opposite to that shown in Figure 5. The highest brightness 100% is the brightness of the transparent glass portion, and the lowest brightness 0% is chromium. The brightness of the upper part of the pattern. This is because the reflected light or transmitted light reverses the concentration distribution of brightness. Therefore, from the first area toward the N area, in the direction of decreasing brightness, the area where the brightness is formed in the middle 50% is the edge portion Lt, and in the direction of increasing brightness, the area where the brightness is the middle 50% is the edge portion Rt . Furthermore, if it is expressed by the aforementioned formula (1), the line width dimension Wt at the bottom can be obtained from the edge portion Lt and the edge portion Rt by the formula (2).
Wt=(Rt—Lt)xC，……式（2) 在此，C ’為補正係數，與前述之C同樣，測定已知之樣 1226427 本以預先求得補正係數。 近年來，使用於液晶板之LCD基板等之FDP基板、與 半導體晶圓等、及形成於其各種遮罩基板上之配線圖案已 愈來愈精細化。 5 例如，隨著液晶板的高精細化，在液晶板的製造步驟 中，例如在LCD基板上，形成各每1像素之薄膜電晶體的圖 案的線寬微細化成例如5μηι±0·5μηι。在液晶板（或液晶顯示 器）例如有 TFT(Thin Film Transistor)、STN(Super TwistedWt = (Rt—Lt) xC, ... Equation (2) Here, C ′ is a correction coefficient. Similar to the above-mentioned C, a known sample is measured. 1226427 This correction coefficient is obtained in advance. In recent years, FDP substrates such as LCD substrates used for liquid crystal panels, semiconductor wafers, and the like, and wiring patterns formed on various mask substrates thereof have been refined. 5 For example, with the high definition of liquid crystal panels, in the manufacturing steps of liquid crystal panels, for example, on the LCD substrate, the line width of a pattern of a thin film transistor per pixel is made finer, for example, 5 μm ± 0.5 μm. Examples of the liquid crystal panel (or liquid crystal display) include TFT (Thin Film Transistor), STN (Super Twisted
Nematic) > DSTN(Dual-scan Super Twisted Nematic) ^ PDP 10等方式。另外，隨著圖案的微細化，圖案的截面形狀也要 求由梯形到更立體之四角（□)的形狀（亦即沒有圖案的錐形 部分之形狀）’為此’檢查圖案形成時之抗钕劑塗布狀態， 及在抗侧剝離後之實際的圖案狀態之配線圖案部之截面 形狀’亦即圖案的錐形(傾斜)部分(錐形的寬度)之測定是不 ,P’在述之技術中’若錐形的寬度比解析度更大 =檢上部與下部。但是’圖案的錐形的寬度 靡」_析度，所以變成無法辨 識圖木㈣。結果，窗能測定錐形 20 因此’雖可以用於管理圖案“傾斜寻 法測Γ步驟之管理㈣需之錐 本發明的目的係提供一種消除 、”" 定之圖案的錐形的寬度較小，亦可以測=點，即使測 截面形狀，亦即錐形形狀之方法及裝置^讀及測定其 10 1226427 【發明内容】 發明概要 為了達成上述目的，本發明之尺寸測定方法，係利用 反射照明與透過照明的特徵以測定在1個之影像（反射或透 5 過照明）邊緣部之較難判斷之錐形的形狀者。 亦即，本發明之尺寸測定方法，係經由顯微鏡以攝影 裝置攝影形成於基板上之配線圖案，並使用具有處理由上 述攝影裝置所攝得之影像信號之信號處理部及照明上述配 線圖案之反射及透過照明裝置之配線圖案之尺寸測定裝 10 置。該尺寸測定方法包含：在上述信號處理部，藉由上述 反射照明裝置照射之反射光來檢測上述配線圖案之上部邊 緣部的位置，並藉由上述透過照明裝置照射之透過照明來 檢測上述配線圖案之下部邊緣部的位置之階段；及由上述 檢測之配線圖案之上部邊緣部的位置與上述檢測之配線圖 15 案之下部邊緣部的位置來測定上述配線圖案的尺寸之階 段。 另外，較佳地，在本發明之尺寸測定方法中，上述配 線圖案之上部邊緣部的位置及上述配線圖案的下部邊緣部 的位置，係分別依據由上述攝影裝置所攝得之上述配線圖 20 案之亮度信號位準加以演算。 另外，較佳地，在本發明之尺寸測定方法中，上述配 線圖案的尺寸係依據上述顯微鏡與上述配線圖案之距離資 訊加以演算。 另外，較佳地，在本發明之尺寸測定方法中，上述距 1226427 離資訊為上述配線圖案與上述反射光及透過光之合焦點位 置之間之距離。 另外，較佳地，在本發明之尺寸測定方法中，上述反 射照明裝置與上述透過照明裝置係同時照射至上述配線線 5 圖案，並測定上述配線圖案的尺寸。 另外，本發明之配線圖案之尺寸測定裝置，包含：載 置台，係搭載具有形成於基板上之配線圖案之測定試料； 顯微鏡，係可放大上述配線圖案；攝影裝置，係將上述顯 微鏡所放大之配線圖案像變換成影像信號；影像處理裝 10 置，係用以處理上述影像信號；反射及透過照明裝置，係 用以照明上述配線圖案；及照明控制部，係控制上述反射 及透過照明裝置。又，上述照明控制部係控制上述反射及 透過照明使之同時或個別地照射至上述配線圖案。 另外，較佳地，本發明之配線圖案之尺寸測定裝置， 15 更包括有焦點位置檢測部。 另外，較佳地，在本發明之配線圖案之尺寸測定裝置 中，上述焦點位置檢測部，係將上述反射照明及上述透過 照明的合焦點位置輸入上述影像處理裝置，且上述影像處 理裝置係依據上述反射照明及上述透過照明的合焦點位置 20 演算上述配線圖案的厚度。 另外，較佳地，在本發明之配線圖案之尺寸測定裝置 中，上述顯微鏡為共焦點顯微鏡。 為了達成上述目的，本發明之尺寸測定方法，係在使 用以顯微鏡與二次元傳感器攝影之影像，測定形成於透明 12 1226427 基板上之圖案的尺寸之尺寸測定裝置中，藉反射照明取得 第1之位置座標，並藉透過照明取得第2之位置座標，再依 據上述第1與第2之位置座標測定上述圖案的尺寸。 另外，本發明之尺寸測定方法，係與上述之第1之位置 5 座標同時地取得上述顯微鏡與上述圖案之距離資訊，並依 據上述第1與第2之位置座標及上述距離資訊測定上述圖案 之尺寸。 另外，本發明之尺寸測定方法之上述距離資訊，係將 上述反射照明與上述透過照明分別作為同焦點位置之高度 10 者。 為了達成上述目的，本發明之尺寸測定裝置包含放大 測定對象物像之顯微鏡、將放大之測定對象物像作為影像 信號攝影之攝影裝置、及由其影像信號測定形成於透明基 板上之圖案的尺寸之影像處理裝置，且為具備可同時或個 15 別地將反射光與透過光照射至上述圖案之照明切換功能 者。 若依據本發明，線寬度尺寸的測定當然是以到目前為 止為高精度的技術進行，且可以測定線寬度邊緣的錐形寬 度、錐形高度、錐形傾斜等之圖案的截面形狀的資訊。 20 亦即，即使因圖案的微細化等使錐形的寬度較小時， 亦可以確實地測定尺寸。又，藉同時照射反射光與透過光， 可以有效率地進行測定，且可以縮短測定與檢查的輸送時 間，結果具有縮短製品的製作時間並可削減成本之效果。 13 1226427 t實施方式3 較佳實施例之詳細說明 以下，依據第1圖〜第13說明本發明之實施例。第8圖為 為本發明之一實施例之尺寸測定裝置的構成之方塊圖。 5 於第8圖中，置於顯微鏡101之載置台100之試料（測定 對象物）102之像(被照體像），係以顯微鏡101之對物透鏡放 大。放大之被照體像係藉電視攝影機103變換成影像信號， 輸出至測定部5。 測定部5係控制組入顯微鏡101之反射用照明燈7之照 10 明電源部8與透過用照明燈9之照明電源部10，由電視攝影 機103取得之影像信號的亮度資訊，測定試料102的圖案之 線寬度與錐形寬度，並將測定之結果與必要之資訊輸出至 影像監視器6。影像監視器6係顯示被照體像與測定結果。 反射用照明燈7與透過用照明燈9為例如i素燈。 15 測定部5係操作員依據未圖示之輸出入機器進行操作。 (實施例1) 依據第9圖說明增大測定之圖案之錐形的寬度，傾斜緩 和時之本發明之尺寸測定方法之一實施例。第9圖為用以說 明增大圖案之錐形的寬度，傾斜緩和時之本發明之尺寸測 20 定方法之一實施例之圖。 該例係下述之關係在圖案上部與圖案下部具有亮度值 的情形。 圖案上部20的亮度值>基礎圖案14的亮度值 在第9圖中，（a)為試料102的一部之攝影影像，且11為 14 1226427 攝影影像、12為基準線、18為圖案部、19為圖案之錐形部。 (b)為在攝影影像u的基準線12之圖案截面13。另外，箭頭 符號為模式地表示光的前進路線與方向。（c)為測定對象物 像11的亮度分布15。另外，該亮度分布15僅描繪必須說明 5之一部份，橫軸方向為在(a)(b)(c)基準線12上之對應位置。 亦即，在試料102由組入顯微鏡101之反射用照明燈7 照射時，若取得在基準線12的攝影影像π的每一像素之亮 度值’則圖案截面13與右邊緣部，也就是錐形部19的左邊 緣部（L) 16及基礎圖案（圖案下部）14的關係，形成如亮度分 10 布15者。 此時，圖案上部20的右邊緣部（L)16與圖案下部14之左 邊緣部，即錐形部19之右邊緣部(R)17，係分別與第5圖說 明之方法相同地，檢測亮度值的差之50%的部分之像素的 區域。更進一步，藉一般的影像處理方法可以作如式(3)所 15 示之尺寸計測。 W-(R-L)xK ……式(3) 在此，K為補正係數，與前述式（1)(2)同樣地，且事先 測定已知之樣本來決定。R為圖案下部之左邊緣部17的區 域，L為圖案上部20的右邊緣部16的區域。 20 另外，在第9圖中，若以圖案上部20的亮度值為10〇〇/〇， 以亮度最低之部分之亮度值為〇，則基礎圖案14的亮度值為 5〜10%。 又，在第9圖中，係使用，例如，顯微鏡101之對物透 鏡係為20倍，而中間透鏡為約3·3倍者。由於倍率的關係， 15 1226427 亮度分布的曲線未變鈍。但是，若使用，例如，顯微鏡1 〇 1 之對物透鏡為50倍、而中間透鏡為約3.3倍者，則亮度分布 之曲線變鈍。 其次，當縮小測定之圖案之錐形之寬度，且傾斜陡峭 5 時，本發明之尺寸測定方法之一實施例係藉第10圖及第11 圖說明。第10圖為縮小圖案之錐形的寬度，傾斜陡峭時之 一例之說明圖，且該例亦有以下之關係： 圖案上部20的亮度值>基礎圖案14的亮度值 (a)為攝影影像11，（b)為表示在攝影影像11的基準線12 10 之圖案之截面13，（c)為攝影影像11的基準線12上之亮度分 布15 。另外，箭頭符號為模式地表示光的前進路線。 圖案上部20及基礎圖案14的反射率雖與第9圖相同，不 過在圖案的錐形部19由於錐形的寬度接近光的波長，所以 解析度變差而無法檢測亮度值。因此，在第10圖，若以圖 15 案上部20的亮度值為100，以亮度最低之部分之亮度值為 0%，則由於基礎圖案14之亮度值最低，所以形成如亮度分 布15之波形，因此，雖可以檢測圖案上部20之右邊緣部16， 不過圖案下部14的左邊緣部17卻無法檢測。 為了解決此問題，如第11圖所顯示，本發明首先藉組 20 入顯微鏡101之反射用照明燈7照射測定對象物11，如第10 圖中之說明一般地檢測圖案上部之右邊緣部16。第11圖之 (a)(b)(c)，由於是用以說明與第10圖之(a)(b)(c)相同之圖所 描繪者，所以省略說明。另外，（d)為表示在攝影影像11的 基準線12之圖案截面13。（e)為攝影影像11的基準線12上之 16 1226427 亮度分布15”。另外，箭頭符號為模式地表示光的前進路線。 其次，藉組入顯微鏡101之透過用照明燈9，將照射測 定對象物之照明切換成透過照明。 此時，如第11圖（d)所顯示，在圖案上部20與錐形部19 5 光無法完全透過，而在基礎圖案14，由於光可以透過，所 以可以得到如第11圖（e)所顯示之亮度分布15”。因此，可以 檢測圖案下部之左邊緣部17。 由以上所得到之圖案上部之右邊緣部16與圖案下部之 左邊緣部17，依據式（3)可以作尺寸計測。 10 在上述說明中，雖已針對圖案右側之錐形部說明了檢 測左與右之邊緣，不過當然亦可針對圖案左側之錐形部同 樣地進行尺寸計測。 另外，在基礎圖案14中，由於光幾乎都透過，所以亮 度分布之亮度差最大。 15 (實施例2) 如上述實施例，切換反射照明與透過照明，可以檢測 圖案上部之右邊緣部16與圖案下部之左邊緣部17。但是， 實際上，在使反射用照明燈7點亮之狀態下，處理以電視攝 影機103所得之影像信號，其次，點亮透過用照明燈9，在 20 透過用照明燈9到達安定為止之時間與使透過用照明燈9點 亮之狀態下，處理以電視攝影機103所得到之影像信號，所 以需花費2次之影像信號的取回及處理時間。因此，在製品 的生產工廠時，會對輸送時間產生影響，生產效率變差。 為了改善此問題，如第12圖所顯示，將反射用照明燈7 ]7 1226427 與透過用照明燈9同時照射至測定之試料102。又，即使同 時照射反射光與透過光，由於在電視攝影機103分別檢測合 算之反射光及透過光之光量，所以亮度分布為合成在反射 照明時所得之亮度分布與透過照明時所得之亮度分布之亮 5 度分布21。 該狀態，可能與在第9圖說明之測定之圖案的上部與下 部的反射率，亦即亮度位準的差較小的情形相同，或者， 由於形成下部的反射率變大之亮度分布，所以可以進一步 作最安定之計測處理。 10 另外，針對以電視攝影機所得之影像信號，由於可以 以1次的處理就完成，所以也提升用於生產之輸送時間。 (實施例3) 其次，在第13圖顯示本發明之其他實施例。第13圖係 在第8圖之尺寸測定裝置，為了提昇圖案之錐形的高度之測 15 定精度，安裝了焦點位置檢測用之Z軸方向測定部（顯微鏡 101的高度方向，或試料102之圖案13之厚度方向測定用之 標尺）80。 在至上述為止之實施例中，圖案的高度係以可經常進 行可以實現一定的高度之尺寸測定作為製作的條件。但 20 是，在實際的圖案，必定會不均一，無法為一定的高度。 因此，如在此說明一般，高度方向的測定也很重要。 第7圖為圖案截面與反射照明及透過照明之基準線的 亮度分布的關係之圖。（a)為在試料102之透明玻璃基板201 與形成於透明玻璃基板201上之鉻蒸鍍圖案202之基準線之 18 1226427 截面之圖，且(b)為顯示反射照明之亮度分布Ct之圖，（c)為 顯示透過照明之亮度分布Cr之圖。 如第7圖（b)所顯示，由於反射照明是由試料102的上面 照射光，且光線筆直地反射射入顯微鏡，所以圖案之頂部 5 之平的（上面平坦的）部分之圖案上部20變亮。另外，由於錐 形部19與19’的部分光線斜向地反射，射入顯微鏡之反射光 比圖案上部反射光少，所以變暗。另外，基礎圖案（底部）14 之玻璃光透過，反射光未射入顯微鏡，所以變暗。 因此，形成亮度分布Cr。以由該亮度分布1朝向N區域 10 (對應於像素數）亮度變成50%之區域為邊緣部Lr，邊緣部 LH系相當於圖案左側之頂部之邊緣部71。另外，此時之合 焦點位置座標（Z軸座標）係藉標尺80測定，且係給予測定部 5之頂部之區域Zr(對應於Z軸方向的位置（區域）之標尺座 標）。 15 與上述同樣地，針對圖案右側之頂部之邊緣73與底部 之邊緣74，亦可以測定對應之區域（晝面記憶體區域與Z軸 方向之位置）。 其次，如第7圖（C)所顯示，由於透過照明係由試料102 的下面照射光，所以光透過圖案之無透明玻璃部分而變 20 亮。錐形部分與頂部之鉻蒸鍍部分，由於光無法透過而變 暗，所以形成亮度分布Ct。以由該亮度分布之1朝向N區域 (對應於像素數）亮度形成50%之區域作為邊緣部Lt，且邊 緣部Lt係相當於圖案左側之底部之邊緣部72。另外，此時 之合焦點位置座標係以標尺80測定，相當於底部的區域Zt。 19 1226427 籍由上述求得之輪部Li·與Lt，可以以下式求得圖案左 側邊緣之錐形的寬度TL。 TL=(Lt —Lr)xC，，……式(4) 在此，C”為補正係數。又，與前述之C、C’同樣，係 5 預先測定已知之樣本求出補正係數。 另外，在求出上述錐形寬度時，分別以檢測之反射照 明與透過照明，藉合焦點位置之標尺的座標Zr與Zt，可以 下式求出圖案左側邊緣之錐形的高度HL。 HL=Zt-Zr ……式（5) 10 進一步，藉上述求得之錐形的寬度TL與高度HL，可以 以下式求得圖案左側邊緣之錐形的傾斜角度D L (顯示於第7 圖（a)) DL = tarf1 (HL+TL)……式(6) 又，DL以接近90度作為微細之圖案較優，或較佳。求 15 出該角度，與預先設定之值作比較，就可以進行判定製品 或圖案之良否。 標尺80，係使用，例如即使改變Z軸的位置，亦不會於 於X、Y方向變位之筆直度優異之微動Z軸機構（筆直度誤 差：10nm)。 2〇 另外，顯微鏡101係使用可以分解圖案的頂側與底側之 共焦點顯微鏡（同焦點）。（Z軸方向解析度：Ο.ίμιη) 在高度方向上，共焦點顯微鏡（同焦點）雖僅能作Ο.ίμηι 之解析度，不過亦可使用其他方法之雷射干涉計進行高解 析度化。 20 1226427 另外，在上述之實施例，雖將亮度5〇%之區域作為邊 緣部’不料用說亦相藉測定之物體作適#設定及變更。 產業上利用的可能性 士 X上所述，在組合顯微鏡與藉顯微鏡攝影放大試料 像之電視攝影機等之平面圖像傳感器，進行圖案之錐形寬 度等尺寸測定之影像處理之尺寸測定裝置中，即使錐形的 寬度較小的情形’由於可以藉個別地或同時地以反射昭明 照射圖案上部，以透過照明照射圖案下部，以檢測圖宰的 錐形部’所以可以進行妓之„部的錐形寬度與傾斜的 尺寸測定。 L闽簡孕^明】 f1圖為用以說明習知之尺寸败裝置之構成圖。 第2圖為習知之測定畫面的顯示例之圖。 15 2〇 射玻：板上之鉻蒸鑛，圖案的表面之反 過照==一—表面之透 ==為第3圖之測定影像之基準線上之亮度分布圖。 第4圖之敎影像之基準線上之亮度分布圖。 第8=用以說明本發明之—實施例之亮度分度圖。 塊圖。發明之—實施例之尺寸㈣裝置的構成之 第9圖為用 之圖。 以說明本發明 之尺寸測定方法之一實施例 21 1226427 第ίο圖為用以說明本發明之尺寸測定方法之一實施例 之圖。 第11圖為用以說明本發明之尺寸測定方法之一實施例 之圖。 5 第12圖為同時照射反射照明與透過照明時，圖案上部 與下部的亮度分部之說明圖。 第13圖為本發明之一實施例之尺寸測定裝置的構成之 方塊圖。 【圖式之主要元件代表符號表】 3...對物透鏡 19...錐形部 5...測定部 20…圖案上部 6...影像監視器 21...亮度分布 7...反射用照明燈 7；1、72、73、74…邊緣部 8...照明電源部 80...標尺 9...透過用照明燈 101…顯微鏡 10...照明電源部 102...試料 11...攝影影像 103…電視攝影機 12...基準線 104…測定部 13…截面圖案 106…測定畫面 14...基礎圖案 107...攝影機影像顯示區 15、15’、15”…亮度分布 201...透明玻璃基板 16...邊緣部 202…鋁蒸鍍圖案 17...邊緣部 301...白底部 18...圖案部 302...黑底部 1226427 303.·.基準線 402...白底部 401...黑底部Nematic) > DSTN (Dual-scan Super Twisted Nematic) ^ PDP 10 and other methods. In addition, with the miniaturization of the pattern, the cross-sectional shape of the pattern also needs to be from a trapezoidal shape to a more solid four-corner (□) shape (that is, the shape of the tapered portion without the pattern). For this purpose, check the resistance to neodymium when the pattern is formed. The measurement of the coating state of the agent and the actual cross-sectional shape of the wiring pattern portion after the side peeling resistance, that is, the measurement of the tapered (inclined) portion of the pattern (the width of the tapered shape) is not measured. Middle 'If the width of the cone is larger than the resolution = check the upper and lower parts. However, the width of the cone of the 'pattern' is too large ", so it becomes impossible to recognize the figure. As a result, the window can measure the taper 20, so 'although it can be used to manage the pattern', "Tilt-finding method to measure the required taper of the Γ step, the purpose of the present invention is to provide a way to eliminate the" " tapered width of the taper of the pattern. " It is also possible to measure = points, even if the cross-sectional shape is measured, that is, the method and device for conical shape ^ reading and measuring 10 1226427 [Summary of the Invention] In order to achieve the above purpose, the dimensional measuring method of the present invention uses reflected lighting It is difficult to judge the shape of the cone with the characteristics of the transmitted light to measure the edge of one image (reflected or transparent). That is, in the dimensional measurement method of the present invention, a wiring pattern formed on a substrate is photographed with a photographing device through a microscope, and a signal processing unit having a processing signal for processing an image signal captured by the photographing device and a reflection for illuminating the wiring pattern are used. And the size measurement device for the wiring pattern of the lighting device. The sizing method includes detecting the position of the edge portion of the upper portion of the wiring pattern by the reflected light irradiated by the reflective lighting device in the signal processing unit, and detecting the wiring pattern by the transmission illumination irradiated by the transmission lighting device. The stage of the position of the lower edge portion; and the stage of measuring the size of the wiring pattern from the position of the upper edge portion of the detected wiring pattern and the position of the lower edge portion of the detected wiring pattern. In addition, preferably, in the dimensional measuring method of the present invention, the position of the upper edge portion of the wiring pattern and the position of the lower edge portion of the wiring pattern are based on the wiring diagram 20 obtained by the photographing device, respectively. The brightness signal level of the case is calculated. In addition, preferably, in the dimensional measuring method of the present invention, the size of the wiring pattern is calculated based on distance information between the microscope and the wiring pattern. In addition, preferably, in the dimensional measuring method of the present invention, the distance 1226427 is the distance between the wiring pattern and the focal position of the reflected light and the transmitted light. In addition, in the dimensional measuring method of the present invention, it is preferable that the reflective lighting device and the transmissive lighting device simultaneously irradiate the pattern of the wiring line 5 and measure the size of the wiring pattern. In addition, the wiring pattern size measuring device of the present invention includes: a mounting table for mounting a measurement sample having a wiring pattern formed on a substrate; a microscope for enlarging the above-mentioned wiring pattern; and a photographing device for enlarging the above-mentioned microscope. The wiring pattern image is converted into an image signal; an image processing device 10 is used to process the image signal; a reflection and transmission lighting device is used to illuminate the wiring pattern; and a lighting control unit controls the reflection and transmission lighting device. The illumination control unit controls the reflection and transmission illumination to irradiate the wiring pattern simultaneously or individually. In addition, it is preferable that the size measurement device 15 for a wiring pattern of the present invention further includes a focus position detection section. In addition, preferably, in the dimension measurement device of the wiring pattern of the present invention, the focus position detection unit inputs the combined focal position of the reflected illumination and the transmitted illumination to the image processing apparatus, and the image processing apparatus is based on The focal position 20 of the reflected illumination and the transmitted illumination calculates the thickness of the wiring pattern. In addition, in the wiring pattern sizing device of the present invention, the microscope is preferably a confocal microscope. In order to achieve the above-mentioned object, the dimensional measuring method of the present invention is a dimensional measuring device for measuring the size of a pattern formed on a transparent 12 1226427 substrate using an image photographed with a microscope and a two-dimensional sensor, and obtains the first one by reflecting illumination. Position coordinates, and obtain the second position coordinates by lighting, and then determine the size of the pattern according to the first and second position coordinates. In addition, the dimensional measuring method of the present invention obtains the distance information between the microscope and the pattern simultaneously with the first position 5 coordinate, and measures the position of the pattern based on the first and second position coordinates and the distance information. size. In addition, the above-mentioned distance information of the dimensional measuring method of the present invention is one in which the above-mentioned reflected illumination and the above-mentioned transmitted illumination are taken as heights of the same focal position, respectively. In order to achieve the above object, the dimensional measuring device of the present invention includes a microscope that enlarges a measurement target image, an imaging device that photographs the enlarged measurement target image as an image signal, and measures the size of a pattern formed on a transparent substrate based on the image signal. The image processing device is provided with an illumination switching function that can illuminate the reflected light and the transmitted light onto the above pattern simultaneously or individually. According to the present invention, of course, the measurement of the line width dimension is performed by a technique which has hitherto been highly accurate, and information on the cross-sectional shape of a pattern such as a tapered width, a tapered height, and a tapered slope of the line width edge can be measured. That is, even if the tapered width is made small due to the miniaturization of a pattern, etc., the size can be measured reliably. In addition, by irradiating the reflected light and the transmitted light at the same time, the measurement can be performed efficiently, and the transportation time of the measurement and inspection can be shortened. As a result, the production time of the product can be shortened and the cost can be reduced. 13 1226427 tDetailed description of preferred embodiment 3 Embodiment 3 Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 13. Fig. 8 is a block diagram showing a configuration of a dimensional measuring device according to an embodiment of the present invention. 5 In FIG. 8, the image (subject image) of the sample (object to be measured) 102 placed on the mounting table 100 of the microscope 101 is enlarged with the objective lens of the microscope 101. The enlarged subject image is converted into an image signal by the television camera 103 and output to the measurement unit 5. The measuring unit 5 controls the illumination 10 of the reflection illumination lamp 7 incorporated in the microscope 101 to illuminate the power supply unit 8 and the illumination power supply unit 10 of the transmission illumination lamp 9. The brightness information of the image signal obtained by the television camera 103 is used to measure the brightness of the sample 102. The line width and tapered width of the pattern are output to the image monitor 6 with the measurement result and necessary information. The video monitor 6 displays a subject image and a measurement result. The reflection illumination lamp 7 and the transmission illumination lamp 9 are, for example, i-lights. 15 The measurement section 5 is operated by an operator based on an input / output device (not shown). (Embodiment 1) An example of the dimensional measurement method of the present invention when the width of the cone of the pattern to be measured is increased and the inclination is relaxed will be described with reference to Fig. 9. Fig. 9 is a diagram for explaining an example of a method for determining the size of the present invention when the width of the cone of the pattern is increased and the slope is relaxed. This example is a case where the following relationship has a brightness value at the upper part and lower part of the pattern. The brightness value of the upper part of the pattern 20> The brightness value of the basic pattern 14 is shown in FIG. 9, (a) is a photographic image of a part of the sample 102, and 11 is 14 1226427 photographic image, 12 is a reference line, and 18 is a pattern part And 19 are tapered portions of the pattern. (b) is a pattern section 13 on the reference line 12 of the photographed image u. In addition, the arrow symbol indicates the course and direction of light. (C) is the brightness distribution 15 of the measurement target image 11. In addition, this luminance distribution 15 only depicts a part that must be described 5, and the horizontal axis direction is the corresponding position on the reference line 12 (a) (b) (c). That is, when the sample 102 is irradiated with the reflection illumination lamp 7 incorporated in the microscope 101, if the luminance value of each pixel of the photographic image π at the reference line 12 is obtained, the pattern section 13 and the right edge portion, that is, the cone The relationship between the left edge portion (L) 16 of the shape portion 19 and the basic pattern (the lower portion of the pattern) 14 is formed such that the brightness is divided into 10 and 15 distributions. At this time, the right edge portion (L) 16 of the upper pattern portion 20 and the left edge portion of the lower pattern portion 14, that is, the right edge portion (R) 17 of the tapered portion 19, are detected in the same manner as the method illustrated in FIG. 5, respectively. The area of pixels that is 50% of the difference in luminance values. Furthermore, the general image processing method can be used to measure the size as shown in Equation (3). W- (R-L) xK …… Equation (3) Here, K is a correction coefficient, which is determined in the same manner as in the aforementioned expressions (1) (2) and by measuring a known sample in advance. R is a region of the left edge portion 17 of the lower portion of the pattern, and L is a region of the right edge portion 16 of the upper portion 20 of the pattern. 20 In FIG. 9, if the luminance value of the upper part 20 of the pattern is 100/0 and the luminance value of the lowest luminance part is 0, the luminance value of the basic pattern 14 is 5 to 10%. In FIG. 9, for example, the objective lens of the microscope 101 is 20 times, and the intermediate lens is approximately 3.3 times. Due to the magnification, the curve of the brightness distribution of 15 1226427 is not dull. However, if, for example, the objective lens of the microscope 101 is 50 times and the intermediate lens is approximately 3.3 times, the curve of the luminance distribution becomes blunt. Secondly, when the width of the cone of the measured pattern is reduced and the inclination is steep, 5 an embodiment of the dimensional measurement method of the present invention will be described with reference to FIGS. 10 and 11. Fig. 10 is an explanatory diagram of an example when the width of the cone of the pattern is reduced and the slope is steep, and this example also has the following relationship: the brightness value of the upper part of the pattern 20> the brightness value of the basic pattern 14 (a) is a photographic image 11, (b) is a section 13 showing a pattern on the reference line 12 10 of the photographed image 11, and (c) is a luminance distribution 15 on the reference line 12 of the photographed image 11. In addition, an arrow symbol is a pattern which shows the course of light. Although the reflectivity of the upper part of the pattern 20 and the basic pattern 14 is the same as that of Fig. 9, the width of the tapered portion 19 of the pattern is close to the wavelength of light, so the resolution becomes poor and the brightness value cannot be detected. Therefore, in Figure 10, if the brightness value of the upper part 20 in Figure 15 is 100, and the brightness value of the lowest brightness part is 0%, the waveform of the brightness distribution 15 is formed because the brightness value of the basic pattern 14 is the lowest. Therefore, although the right edge portion 16 of the upper pattern portion 20 can be detected, the left edge portion 17 of the lower pattern portion 14 cannot be detected. In order to solve this problem, as shown in FIG. 11, the present invention firstly irradiates the measurement object 11 by the reflection illumination lamp 7 of the group 20 into the microscope 101, and generally detects the right edge 16 of the upper part of the pattern as described in FIG. 10. . (A), (b), and (c) of FIG. 11 are described to illustrate the same drawing as that of (a), (b), and (c) of FIG. 10, and therefore description is omitted. In addition, (d) is a pattern cross section 13 showing a reference line 12 on the photographed image 11. (E) 16 on the reference line 12 of the photographed image 11 1226427 brightness distribution 15 ". In addition, the arrow symbol indicates the course of the light. Second, the illumination lamp 9 for transmission through the microscope 101 is used to measure the irradiation. The illumination of the object is switched to transillumination. At this time, as shown in Fig. 11 (d), light cannot be completely transmitted through the upper part of the pattern 20 and the tapered part 19 5, and the light can be transmitted through the base pattern 14 so it can be transmitted. A brightness distribution 15 "as shown in Fig. 11 (e) is obtained. Therefore, the left edge portion 17 of the lower portion of the pattern can be detected. From the above, the right edge portion 16 of the upper portion of the pattern and the left edge portion 17 of the lower portion of the pattern can be measured in accordance with formula (3). 10 In the above description, although the detection of the left and right edges has been described for the tapered portion on the right side of the pattern, of course, the same measurement can be performed on the tapered portion on the left side of the pattern. In addition, in the basic pattern 14, since almost all light is transmitted, the brightness difference in the brightness distribution is the largest. 15 (Embodiment 2) As in the above-mentioned embodiment, by switching between reflected illumination and transmitted illumination, it is possible to detect the right edge portion 16 of the upper portion of the pattern and the left edge portion 17 of the lower portion of the pattern. However, in reality, the video signal obtained by the television camera 103 is processed with the reflection lighting lamp 7 turned on. Next, the transmission lighting lamp 9 is turned on, and the time until the transmission lighting lamp 9 reaches a stable state is set. In a state where the transmission illumination lamp 9 is turned on, the video signal obtained by the television camera 103 is processed, so it takes two times to retrieve and process the video signal. Therefore, in the production plant of the product, the transportation time is affected and the production efficiency is deteriorated. In order to improve this problem, as shown in FIG. 12, the reflection illumination lamp 7] 7 1226427 and the transmission illumination lamp 9 are simultaneously irradiated to the measurement sample 102. In addition, even if the reflected light and the transmitted light are irradiated at the same time, since the cost of the reflected light and the transmitted light are separately detected by the television camera 103, the brightness distribution is a combination of the brightness distribution obtained during reflected lighting and the brightness distribution obtained through transmitted lighting Bright 5 degree distribution 21. This state may be the same as the case where the reflectance of the upper and lower portions of the pattern measured as described in FIG. 9 is smaller, that is, when the difference in brightness level is small, or because the brightness distribution of the lower reflectance becomes larger, You can further make the most stable measurement processing. 10 In addition, the video signal obtained by a television camera can be completed in one process, so the delivery time for production is also increased. (Embodiment 3) Next, Fig. 13 shows another embodiment of the present invention. Fig. 13 is a dimensional measuring device shown in Fig. 8. In order to improve the measurement accuracy of the cone height of the pattern, a Z-axis direction measuring unit (the height direction of the microscope 101 or the sample 102) for the focus position detection is installed. A scale for measuring the thickness direction of the pattern 13) 80. In the examples up to this point, the height of the pattern is based on the condition that the measurement of the size that can achieve a certain height can be performed frequently. But 20 is that in the actual pattern, it must be uneven and cannot be a certain height. Therefore, as described here, measurement in the height direction is also important. Fig. 7 is a graph showing the relationship between the pattern cross section and the luminance distribution of the reference lines of the reflected illumination and the transmitted illumination. (A) A cross-sectional view of the reference line 18 1226427 of the transparent glass substrate 201 of the sample 102 and the chromium evaporation pattern 202 formed on the transparent glass substrate 201, and (b) a diagram showing the brightness distribution Ct of the reflected illumination (C) is a graph showing the luminance distribution Cr through the illumination. As shown in FIG. 7 (b), since the reflected illumination is irradiated with light from the top of the sample 102, and the light is reflected straight into the microscope, the upper part 20 of the flat (top flat) part of the top 5 of the pattern changes bright. In addition, part of the light rays of the tapered portions 19 and 19 'are obliquely reflected, and the reflected light entering the microscope is less than the reflected light at the upper part of the pattern, and therefore becomes darker. In addition, since the glass light of the basic pattern (bottom) 14 is transmitted, the reflected light is not incident on the microscope, and therefore becomes dark. Therefore, a luminance distribution Cr is formed. A region where the luminance becomes 50% from the luminance distribution 1 toward the N region 10 (corresponding to the number of pixels) is an edge portion Lr, and the edge portion LH is an edge portion 71 corresponding to the top of the left side of the pattern. In addition, the coordinate of the focal position (Z-axis coordinate) at this time is measured by the scale 80, and is given to the area Zr (the scale coordinate corresponding to the position (area) in the Z-axis direction) at the top of the measuring section 5. 15 Similar to the above, corresponding areas (positions of the day-time memory area and the Z-axis direction) can also be measured for the top edge 73 and the bottom edge 74 on the right side of the pattern. Next, as shown in FIG. 7 (C), since the transmission illumination system irradiates light from the lower surface of the sample 102, the light passes through the non-transparent glass portion of the pattern and becomes brighter. The tapered portion and the chrome-deposited portion on the top become darker because light cannot be transmitted therethrough, so that a brightness distribution Ct is formed. The edge portion Lt is defined as an area where the luminance is formed by 50% of the brightness from one of the luminance distribution toward the N area (corresponding to the number of pixels), and the edge portion Lt is an edge portion 72 corresponding to the bottom of the left side of the pattern. The coordinate of the focal position at this time is measured with a scale 80, which corresponds to the area Zt at the bottom. 19 1226427 Based on the obtained wheel parts Li · and Lt, the tapered width TL of the left edge of the pattern can be obtained by the following formula. TL = (Lt —Lr) xC, ... (Eq. (4) Here, C ”is the correction coefficient. In the same manner as C and C ′ described above, the known samples are measured in advance to determine the correction coefficient. In addition, When determining the width of the taper, the height of the taper HL of the left edge of the pattern can be calculated by the following equations: Zr and Zt of the scale of the focal position based on the detected reflected illumination and transmitted illumination. Zr …… Equation (5) 10 Further, from the width TL and height HL of the cone obtained as described above, the inclination angle DL of the cone of the left edge of the pattern can be obtained by the following equation (shown in FIG. 7 (a)) DL = tarf1 (HL + TL) ...... Equation (6) In addition, DL uses a fine pattern close to 90 degrees, or better. Find this angle and compare it with a preset value to determine the product. Or the goodness of the pattern. The ruler 80 is used. For example, even if the position of the Z axis is changed, the micro-movement Z axis mechanism (the straightness error: 10nm) that does not shift in the X and Y directions is excellent. The microscope 101 uses a confocal microscope (same focus) that can decompose the top and bottom sides of the pattern. (Z-axis resolution: Ο.ίμιη) In the height direction, although the confocal microscope (same focal point) can only make Ο.ίμηι resolution, other methods of laser interferometer can also be used for high resolution In addition, in the above-mentioned embodiment, although the area with a brightness of 50% is used as the edge portion, it is unexpectedly set and changed based on the measured object. Possibility of industrial use As described above, in the case of a dimensional measurement device that combines a microscope with a flat image sensor such as a television camera that enlarges a sample image by using a microscope to measure the size of a pattern, such as the tapered width of a pattern, even if the tapered width is small ' Since the upper part of the pattern can be irradiated with reflection Zhaoming individually and simultaneously, the lower part of the pattern can be illuminated through the illumination to detect the tapered portion of Tuzai. Therefore, the tapered width and inclined size of the prostitute can be measured. L Fujian Jianming ^ Ming] f1 is a diagram illustrating the structure of a conventional size device. Fig. 2 is a diagram showing a display example of a conventional measurement screen. 15 2〇 Glass: chrome steam ore on the board, the reflection of the surface of the pattern == one—transparent surface == the brightness distribution on the reference line of the measured image in Figure 3. The brightness distribution on the reference line of the 敎 image in Figure 4. No. 8 = A brightness division chart for explaining the embodiment of the present invention. Block diagram. Invention-Fig. 9 shows the structure of the dimensional device according to the embodiment. An embodiment 21 1226427 to illustrate one embodiment of the dimensional measuring method of the present invention is a diagram for explaining one embodiment of the dimensional measuring method of the present invention. Fig. 11 is a diagram for explaining one embodiment of the dimensional measuring method of the present invention. 5 Figure 12 is an illustration of the brightness divisions at the top and bottom of the pattern when reflecting and transillumination are illuminated at the same time. Fig. 13 is a block diagram showing a configuration of a dimensional measuring device according to an embodiment of the present invention. [Representative symbol table of main elements of the figure] 3 ... objective lens 19 ... tapered portion 5 ... measurement portion 20 ... upper pattern 6 ... image monitor 21 ... brightness distribution 7 .. .Reflection lighting lamps 7; 1, 72, 73, 74 ... Edge section 8 ... Illumination power supply section 80 ... Ruler 9 ... Transmitting illumination lamp 101 ... Microscope 10 ... Illumination power supply section 102 .. Sample 11 ... photographic image 103 ... television camera 12 ... reference line 104 ... measurement section 13 ... section pattern 106 ... measurement screen 14 ... basic pattern 107 ... camera image display area 15, 15 ', 15 "... Brightness distribution 201 ... Transparent glass substrate 16 ... Edge 202 ... Aluminum vapor deposition pattern 17 ... Edge 301 ... White bottom 18 ... Pattern 302 ... Black bottom 1226427 303. · Baseline 402 ... White bottom 401 ... Black bottom