TWI225962B - Method for fabricating cavity array - Google Patents
Method for fabricating cavity array Download PDFInfo
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- TWI225962B TWI225962B TW92115765A TW92115765A TWI225962B TW I225962 B TWI225962 B TW I225962B TW 92115765 A TW92115765 A TW 92115765A TW 92115765 A TW92115765 A TW 92115765A TW I225962 B TWI225962 B TW I225962B
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【發明所屬之技術領域】 ^發明係有關於一種顯示器之微囊化陣列製造方法, 士別是有關於一種利用一靜電微影法形成中空陣列之製造 先前 傳 程中 需要 影製 微小 在一 提升 影製 的製 高精 一項 為電 填充 一色 電極 吸往 為訊 光下 彎曲 過 且 微 多 成 的 微 罩 的 有 理 中 為 明 被 即 陽 以 技術】 統液晶顯示(Hquid crystal display)器的製造 丄微影製程(Uthographic process)是高成本而 7精密度控制的關鍵步驟。特別是在液晶顯示器的 知中’陣列(array )製程是最關鍵的步驟,因為眾 的薄膜電晶體(thin film transistors)要同時形 大塊基板上。因此,降低微影製程的次數可以有效 液晶顯示器的製造良率以及降低其製造成本。利用 程來製造陣列時,每減少一道光罩,代表著降低光 作成本以及曝光次數。而曝光次數的減少表示需要 密度的步驟減少,因而產品的良率得以提升。 顯不技術非常適合可撓式陣列技術,其顯示技術原 泳運動(electrophoretic motion)。即在微膠囊 透明流體與帶正電及負電的有色微顆粒,帶正電者 ,例如黑,負電者為另一色,例如白。當電場以透 與基板電極作用於微膠囊的上下兩側,二種顆粒則 不同的方向。使用者透過透明電極所觀察到的顏色 息所欲傳達的顏色。這項技術所製成的顯示器可於 閱讀,且對比鮮明而質感類似以油墨印製紙張、可 此外’因其為反射式,且所更新頻率彻,从&爺[Technical field to which the invention belongs] ^ The invention relates to a method for manufacturing a microencapsulated array of a display, and particularly to a method of forming a hollow array using an electrostatic lithography method. The manufacturing of high-precision is a technology that fills one-color electrodes with electric suction and bends into microcaps that are bent under the signal light. It is reasonable to be bright and bright. Technology】 Manufacturing of liquid crystal display (Hquid crystal display) Uthographic process is a key step for high cost and precision control. Especially in the knowledge of liquid crystal displays, the 'array' process is the most critical step because many thin film transistors have to be formed on a large substrate at the same time. Therefore, reducing the number of lithographic processes can effectively reduce the manufacturing yield of the liquid crystal display and reduce its manufacturing cost. When using the process to manufacture an array, each reduction of a mask represents a reduction in the cost of light and the number of exposures. A reduction in the number of exposures indicates that fewer steps are required, and the yield of the product is improved. Display technology is very suitable for flexible array technology, whose display technology is electrophoretic motion. That is, in microcapsules, transparent fluid and colored microparticles with positive and negative charges, those with positive charges, such as black, and those with negative charges, such as white. When the electric field acts on the upper and lower sides of the microcapsule through the substrate electrode, the two particles have different directions. The color the user sees through the transparent electrode. The display made by this technology can be read, and the contrast is sharp and the texture is similar to that of printing paper with ink, but also because it ’s reflective and has a completely updated frequency, from &
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少。這些特點,都是目前液晶顯示器作不到的。可撓式主 動陣列技術的開發中,每一個像素均由一個電晶體驅動。less. These features are currently unavailable with liquid crystal displays. In the development of flexible active array technology, each pixel is driven by a transistor.
通常咼分子分散型液晶(p〇1ymer-dispersed liQuid crystal )顯示器’以及電泳(electr〇ph〇retic )顯示器暨 有的方式大都採用光化學相分離(phase separation) 的方式,產生顯示器所需的微囊化陣列。前者例如運用相 刀離的技術,使液晶材料在高分子光聚合過程中形成液晶 微粒;,後者除了利用此方法外,亦有採用光微影技術製 造微型容器(miCrocup),再將電泳材料注入此微型容器 内。前者技術不僅對選用的材料有限制,同時在光聚合的 過程中,不易控制液晶微粒尺寸及分散均勻性,故無法有 效顯示其應有之特性。至於後者需使用光微影技術,導致 製造成本高及製程複雜。故對其全彩化及階調的設定與 析度專無法同時兼顧。 要提供另外一種比較In general, molecular-dispersed liQuid crystal displays and electrophoretic displays, and some methods use photochemical phase separation to generate micro-displays. Encapsulation array. For example, the former uses phase-knife technology to make liquid crystal materials form liquid crystal particles in the process of polymer photopolymerization. In addition to this method, the latter also uses photolithography to make micro-containers (miCrocup), and then injects electrophoretic materials. Inside this miniature container. The former technology not only has restrictions on the materials used, but also makes it difficult to control the size of liquid crystal particles and the uniformity of dispersion during the photopolymerization process, so it cannot effectively display its proper characteristics. As for the latter, photolithography is required, which leads to high manufacturing costs and complicated processes. Therefore, the settings and resolution of its full color and tone cannot be taken into account at the same time. To provide another comparison
因此,對於上述所提之缺點,需 容易製造以及製造成本低之中空陣列 【發明内容】 陣 @ 法 雲於上述之發明 列的製造方法所產 的在於提供一種利 背景中,傳統供液 生的諸多問題與困 用一靜電微影法< 晶顯示器之微囊化 難,本發明主要之 中空陣列之製造方Therefore, for the disadvantages mentioned above, hollow arrays that are easy to manufacture and have low manufacturing costs are required. [Summary of the Invention] The manufacturing method of the array @ 法 云 in the above-mentioned invention is to provide a favorable background, traditional liquid Many problems and difficulties in using an electrostatic lithography method < microencapsulation of a crystal display are difficult, and the main manufacturing method of the hollow array of the present invention
第7頁 五、發明說明(3) 之中 本發明的另一目 空陣列。 的在於製造一尺寸均一及分散性均 勻 製造 基板 玻璃 極光 於上 使得 —議 下, 罩。 空陣 板; 述介 狀態 定距 行一 基板 至該. 後,; =以^所述之㈣,本發明提供了—種中空陣列之 上ί古八包含以下之步驟:首先,提供-基板,上述 錄i π Γ介電基材;接著,將上述介電基材加熱至其 洫度以上,並維持於該恆溫狀態;然後,將一 ^ ::放:上述介電基材之上方特定距•,並加_電場 =極先罩與介電基材之間,進行微 罩:Γ區下之上述基板完全裸露:::成 以Πί丄將溫度下降至該玻璃轉移溫度以 仃上述;丨電基材之固化;最後,移除該電極光 個所k供之應用到本發明之實施例中 隹另 , 〜q γ π π <貝她识 接ίί:法,包含以下之步驟:首先,提供-基 接者,形成一介電基材於上述基板之上;狹接 電3加熱f其玻璃轉移溫度以上,並維持於該㈣ _,U —電極光罩置放於上料電基材之上方朱 難並加一電場於上述電極光罩與介電美 _ 巧微,,使得上述電極光罩之“區下:上= ο全裸露以形成一中空陣列圖案; 2 备除上述電極光罩。 竹化,取 1225962 安备 a 正 SS_92H5765 五、發明說明(4) 在又 種中空陣 基板,上 材加熱至 後,將一 加一電場 微影製程 電極光罩 後,將溫 基材之固 一個所提供 列之製造方 述基板上具 其玻璃轉移 電極光罩置 於上述電極 ’並形成上 之非電極區 度下降至該 化;最後, 之應用 法,包 有一介 溫度以 放於上 光罩與 述電極 下之介 玻璃轉 移除上 到本發 含以下 電基材 上,並 述介電 介電基 光罩之 電基材 移溫度 述電極 明之另一 之步驟: ;接著, 維持於該 基材之上 材之間, 電極區下 薄之中空 以下,以 光罩。 實施例中,— 首先,提供一 將上述介電基 恆溫狀態;然 方特定距離, 以進行一靜電 之介電基材比 陣列圖案;之 進行上述介電 【實施方式】 細描如下。然而,除了詳 且本發明的範圍不受限n 後例中施行, 準。 ^之後的申請專利範圍為 本發明提供了 —較佳實施 空陣列之製造方法,包含以下」丰=〇亥"轭例中,一種中 刼 , 已3以下之步驟··首弈,裎征 1 板,上述基板上具有一介雷其私·#光楗供一基 加埶至豆#琺Μ # ώ 土材,接者,將上述介電基材 後,將-電極光罩置放於上述;=於該怪溫狀態,·然 力Π —電場y !_、+. φ 電基材之上方特定距離, 成上述電極光’以進行-靜電 --二——尤^^電極區下之介電基材比 ulu」I " ··· · _ 第9頁 電極光罩之非電極區下之介 後,將溫度下降至該玻璃轉 基材之固化;最後,移除上 照第一圖到第三圖以解釋之 龟基材薄之中空陣列圖案;之 移溫度以下,以進行上述介電 述電極光罩。上述之步驟請參 請參考第一圖,首先,在一基板100上形成一介電基材 1 01。上述基板1 0 0為一絕緣基板材質,例如玻璃、石夕晶圓 或是塑膠(高分子)。上述介電基材1〇1為一高分子材料, 例如環氧樹脂、聚甲基丙烯酸甲酯 (P〇lymethylmethacrylate,PMMA)、壓克力或聚苯乙烯 (poly styrene,PS)。上述介電基材101之形成方式是採用直 接印刷(printing)或旋轉塗佈(spill coating)。接 著’將上述介電基材1 〇 1加熱至其玻璃轉移溫度以上,並維 持於該恆溫狀態。 ' 請參考第二圖,然後,將一電極光罩102置放於上述介 電基材101之上方一d的距離。上述電極光罩ι〇2之材料包括 一基板103與一電極104,且上述電極光罩102包括^電極區 105與非電極區106。上述電極丨〇4之材料例如是銦錫氧化物 (indium tin oxide, IT0)、鋁(A1 )、鉻(Cr)、氧化鋅 (zinc oxide,ZnO)或銦鋅氧化物(indium zinc oxides)。 之後’加一電壓V於上述電極光罩i〇2與介電基材ιοί之間, 以進行一靜電微影製程。在電壓所產生之電場作用之下, 上述介電基材會產生形變。而形變的結果可以由電極的形 狀來控制,例如是方形或圓形等等。另外,可以藉由控制 _ 案號 92115765 Ϊ225962 五、發明說明(6) 距離d、電壓V與作用時間來達到所需要的結果 請參考第三圖,此圖中顯示了在一距離d、電壓v與一 =作用時間之後,上述電極光罩1〇2之電極區1〇5下之介電 ς材ππ會漸漸地厚,而非電極區106下之介電基材1〇8會漸 ’地薄。因此,可以藉由作用時間的控製而選擇所需要的 =空陣列109圖案。這些中空陣列109可以作為高分子分散 型液晶(polymer-dispersed liquid crystal)顯示器以 及電泳(electrophoretic)顯示器所需之微曩化陣列。Page 7 V. In the description of the invention (3) Another objective array of the present invention. The purpose is to produce a uniform size and uniform dispersion to produce a substrate glass aurora on top so that-the next, the cover. An empty array board; a state of the substrate at a distance from the substrate to the substrate. After that, = = ^ described above, the present invention provides a kind of hollow array on top of the ancient eight include the following steps: First, provide-the substrate, The above recorded i π Γ dielectric substrate; then, the above-mentioned dielectric substrate is heated above its 以上 degree and maintained at the constant temperature state; then, a ^ :: put: a specific distance above the above-mentioned dielectric substrate •, and add _ electric field = between the first mask and the dielectric substrate, and perform micro-masking: the substrate above the Γ region is completely exposed ::: by reducing the temperature to the glass transition temperature by Πί 丄 to make the above; 丨The curing of the electrical substrate; finally, the electrode light is removed and applied to the embodiment of the present invention. In addition, the ~ q γ π π < Beta recognition method includes the following steps: first, Provided-based connector, forming a dielectric substrate on the above substrate; the narrow connection 3 is heated above its glass transition temperature, and maintained at this ㈣, U — electrode mask is placed on the feeding electrical substrate Zhu Nan added an electric field to the above electrode mask and dielectric beauty. Bottom of the electrode mask: top = ο fully exposed to form a hollow array pattern; 2 Prepare the above electrode mask. Bambooized, take 1225962 An Bei a positive SS_92H5765 V. Description of the invention (4) In another type of hollow array After the substrate and the substrate are heated, the one-plus-one electric lithography process electrode mask is placed on the substrate provided with a glass transfer electrode mask on the substrate described above and formed on the substrate. The non-electrode area is reduced to that; in the end, the application method includes a dielectric temperature to be placed under the photomask and the electrode, and the glass is transferred to the electrical base material containing the following, and described Another step is described in the electrode substrate transfer temperature of the dielectric-based photomask. Then, it is maintained between the upper material of the base material and the electrode area under a thin hollow space below the photomask. In the embodiment, — First, a constant temperature state of the above-mentioned dielectric group is provided; then a specific distance is performed to perform an electrostatic dielectric substrate ratio array pattern; the above-mentioned dielectric is performed. [Embodiment] A detailed description is as follows. However, Except for the details and the scope of the present invention is not limited, the following examples are applicable. The scope of the patent application after this provides the present invention-a method of manufacturing an empty array is better implemented, including the following "丰 = 〇 海 " yoke example Medium, a kind of medium, has the following 3 steps. · First game, 1 board, with a medium on the above board. # 光 楗 给 一 基加 埶 至 豆 # EVAΜ # FREE Earth material, then After placing the dielectric substrate, the -electrode mask is placed on the above; = in this strange temperature state, then the force Π-the electric field y! _, +. Φ a certain distance above the dielectric substrate to form the electrode Light 'to proceed-static-two-especially ^^ The dielectric substrate under the electrode area is more than ulu "I " ··· · _ page 9 After the non-electrode area under the electrode mask, the temperature Lower to the curing of the glass-to-substrate; finally, remove the thin hollow array pattern of the turtle substrate explained above according to the first to third figures; move below the temperature to perform the above-mentioned dielectric electrode mask. For the above steps, please refer to the first figure. First, a dielectric substrate 101 is formed on a substrate 100. The substrate 100 is an insulating substrate material, such as glass, Shixi wafer, or plastic (polymer). The dielectric substrate 101 is a polymer material, such as epoxy resin, polymethylmethacrylate (PMMA), acrylic, or polystyrene (PS). The dielectric substrate 101 is formed by using direct printing or spin coating. Next, the above-mentioned dielectric substrate 101 is heated to a temperature above its glass transition temperature and maintained at the constant temperature state. 'Please refer to the second figure, and then place an electrode mask 102 on the dielectric substrate 101 a distance of d. The material of the electrode mask 102 includes a substrate 103 and an electrode 104, and the electrode mask 102 includes an electrode region 105 and a non-electrode region 106. The material of the above electrode 4 is, for example, indium tin oxide (IT0), aluminum (A1), chromium (Cr), zinc oxide (ZnO), or indium zinc oxides. After that, a voltage V is applied between the electrode mask i02 and the dielectric substrate ιο to perform an electrostatic lithography process. Under the action of an electric field generated by a voltage, the dielectric substrate will be deformed. The deformation result can be controlled by the shape of the electrode, such as square or round. In addition, you can control _ Case No. 92115765 Ϊ225962 V. Description of the invention (6) Distance d, voltage V and action time to achieve the required results, please refer to the third figure, which shows a distance d, voltage v After one = action time, the dielectric material ππ under the electrode region 105 of the electrode mask 102 will gradually thicken, and the dielectric substrate 108 under the non-electrode region 106 will gradually increase. thin. Therefore, the desired = empty array 109 pattern can be selected by controlling the action time. These hollow arrays 109 can be used as micro-arrays for polymer-dispersed liquid crystal displays and electrophoretic displays.
所而要的中空陣列1 0 9圖案形成之後,接著,將溫度下 降至上述介電基材之玻璃轉移溫度以下,以進行介電基材 =固化上述介電基材之固化完成之後,再將電極光罩1〇2 此$ 將一顯示媒介材料11 〇注入在上述中空陣列1 〇 9 • ·、70成上述而分子分散型液晶(polymer-dispersed liquid crvstai 、 - 一 @夕他嘉 y』示器以及電泳(e 1 ectrophoret i c )顯 矿=曰化陣列’請參考第四圖。上述顯示媒介材料為 一液日日材料或電泳材料(electrophoretic)。 本貫施例中,语 第五圖。 更包括一將基板1 0 0剝離之步驟,請參考After the desired hollow array 1 09 pattern is formed, the temperature is lowered below the glass transition temperature of the above-mentioned dielectric substrate to perform the dielectric substrate = curing the curing of the above-mentioned dielectric substrate. Electrode mask 10.2 This will inject a display medium material 11 〇 into the above-mentioned hollow array 109 • 70% of the above-mentioned molecular-dispersed liquid crystal (polymer-dispersed liquid crvstai,-一 @ 夕 他 嘉 y 』show Device and electrophoresis (e 1 ectrophoret ic) display ore = "chemical array" Please refer to the fourth figure. The above display medium material is a liquid day or day material or electrophoretic material. In this embodiment, the fifth picture. It also includes a step of peeling the substrate 100, please refer to
在另一個所提供Offered in another
之應用到本發明之實施例中,It is applied to the embodiment of the present invention,
中in
第11頁 1225962 五、發明說明(7) 空陣列之製造 板,接著,形 述介電基材加 狀態;之後, 定距離,並加 行一靜電微影 基板完全裸露 至該玻璃轉移 後,移除上述 92115765 年月日 方法,包含以下之步驟··首先,提供一基 成一介電基材於上述基板之上;秋後,將上 ^至其玻璃轉移溫度以上’並維持於該怪溫 :一電極光罩置放於上述介電基材之上方特 一電場於上述電極光罩與介電基材之間,進 製程,使得上述電極光罩之電極區下之上述 以形成一中空陣列圖案;接著,將溫度下降 =度以下,以進行上述介電基材之固化;最 電極光罩。 f ?實施例中’在一距離d、電壓v與一段 :也厚,=之電21°5下之介電基材111漸漸 ί基板元全稞露,結果形成了第六圖所示之中4束上;ί 案。這些中空陣列112 丁之中工陣列112圖 乍為-員不态所需之微曩化陣列。 上述中空陣列丨i 2圖案形 上述介電基材之玻璃轉移溫度 者/將:度下降至 之^完成之後,再將電極光罩102移 ΐ,:ί成13注入在上述中空陣列112 中以兀成顯不斋之镟曩化陣列,枝务去货L门 · 示媒介材料為一液晶材料或電泳材圖。上述顯 (electrophoretic) 〇 本發明之主要優點如下 第12頁 1225962 ------—案號 92115765 __年月日_修正 _ 五、發明說明(8) 1 ·可以快速的製造尺寸均一以及分散性均勻之中空陣列。 2·可以有效地解決傳統製造方法的技術瓶頸。 3·可以符合低成本之(r〇1丨-“ —r〇1〗)製程概念。 ,,悉此領域技藝者,本發明雖以一較佳實例闡明如 神與範圍内所作之修改排在不脫離本發明之精 申請專利範圍,,這樣的’均應包含在下述之 似結構的最寬廣的詮釋_;圍=與覆蓋在所有修改與類 較佳實例,可用來鐘別不:離::1明如上的本發明- 之各種改變。 脫離本發明之精神與範圍内所作 1225962 a 92UB7RR 圖式簡單說明 圖式簡單說明 0 修正 囷圖是根據本發明所顧示之形 成介電基材於基板上之示 :二圖是根據本發明所顯、, 材之上方並加一電屢之示今固、電極光罩置放於介電基 第三圖是根據本發明所顯示 ♦ 试之上方並加一電屢一段時間之後二,置放於介電基 第四圖是根據本發明所顯示之將 陣列之示意圖; 顯示媒介材科注 入中空 第五圖是根據本發明所顯示之 空陣列之基板剝離之示意圖; /入顯示媒介材料之中 第六圖是根據本發明之另一者* 置放於介電基材之上方並加將一電極光罩 圖; 又f間之後之示意 第七圖是根據本發明之另一實施例所顯示之 材料注入中空陣列之示意圖; f ~顯示媒介 第14頁 1225962 案號 92115765 年 曰 修正 圖式簡單說明 圖式符號對照表: 基板1 0 0Page 11 1225962 V. Description of the invention (7) Fabrication board of empty array, and then describe the state of the dielectric substrate plus; then, set a distance and add an electrostatic lithographic substrate completely exposed to the glass after the transfer, move In addition to the above-mentioned method of 92115765, the following steps are included: First, a base-on-dielectric substrate is provided on the above substrate; after the autumn, it will be raised above its glass transition temperature 'and maintained at the strange temperature: An electrode reticle is placed above the dielectric substrate, and an electric field is placed between the electrode reticle and the dielectric substrate, so that the above can be formed under the electrode area of the electrode reticle to form a hollow array pattern. ; Next, the temperature is lowered to below the degree to perform the curing of the above dielectric substrate; the most electrode photomask. f? In the embodiment, 'a distance d, a voltage v, and a section: also thick, = the dielectric substrate 111 at 21 ° 5 is gradually exposed, and the substrate element is fully exposed, and the result is shown in the sixth figure. 4 beams on; case. These hollow arrays 112 and the middle-work array 112 are at first glance the micro-arrays required for the state of affairs. The above-mentioned hollow array 丨 i 2 pattern-shaped glass transition temperature of the above-mentioned dielectric substrate / After the temperature is reduced to ^, the electrode mask 102 is moved to a position of 13 and injected into the above-mentioned hollow array 112 to Wucheng is an indestructible array, and the door is delivered to the door. The display material is a liquid crystal or electrophoretic material. The above-mentioned (electrophoretic) 〇 The main advantages of the present invention are as follows on page 12 1225962 -------- case number 92115765 __ year month day _ amendment _ 5. Description of the invention (8) 1 · Can quickly produce uniform size and Dispersion uniform hollow array. 2. It can effectively solve the technical bottleneck of traditional manufacturing methods. 3. It can meet the concept of low-cost (r〇1 丨-“-r〇1) process., It is known to those skilled in the art that although the present invention uses a better example to clarify that the modifications made within the scope of God and are ranked Without departing from the scope of the patent application for this invention, such 'shall be included in the broadest interpretation of the following similar structure _; Wai = and cover in all the modifications and the best examples, can be used to distinguish goodbye from: : 1 The various changes of the present invention as described above. 1225962 a 92UB7RR made without departing from the spirit and scope of the present invention. Brief description of the diagram. Brief description 0 The correction is based on the formation of a dielectric substrate in accordance with the present invention. The illustration on the substrate: the second figure is displayed in accordance with the present invention, and an electric power is repeatedly displayed on the top of the material, and the electrode mask is placed on the dielectric base. The third figure is displayed according to the present invention. After adding electricity for a period of time, the second place is placed on the dielectric substrate. The fourth diagram is a schematic diagram of an array according to the present invention; the display medium material is injected into the hollow. The fifth diagram is an empty array according to the present invention. Schematic diagram of substrate peeling; / The sixth figure in the display media material is another one according to the present invention. * The figure is placed above the dielectric substrate and an electrode mask is added. The seventh figure after f is the seventh figure according to the present invention. Schematic diagram of material injection into a hollow array as shown in another embodiment; f ~ Display medium Page 14 1225962 Case No. 92115765 Revised diagram Brief description Schematic symbol comparison table: Substrate 1 0 0
介電基材 1 0 1、1 0 7、1 0 8、111 電極光罩1 0 2 基板1 0 3 電極1 0 4 電極區1 0 5 非電極區1 0 6 中空陣列1 0 9、11 2 顯示媒介材料11 〇、11 3Dielectric substrate 1 0 1, 1 0 7, 1 0 8, 111 Electrode mask 1 0 2 Substrate 1 0 3 Electrode 1 0 4 Electrode area 1 0 5 Non-electrode area 1 0 6 Hollow array 1 0 9, 11 2 Display media material 11 〇, 11 3
第15頁Page 15
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TW92115765A TWI225962B (en) | 2003-06-10 | 2003-06-10 | Method for fabricating cavity array |
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TW92115765A TWI225962B (en) | 2003-06-10 | 2003-06-10 | Method for fabricating cavity array |
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