TWI225962B - Method for fabricating cavity array - Google Patents

Abstract

Method for fabricating cavity array of the present invention comprises the following steps: firstly, providing a substrate having dielectric layer on it, curing the dielectric layer to above the glass transition temperature (Tg) and sustaining the temperature, placing an electrode mask from a distance above the dielectric layer, applying a voltage between the electrode mask and the dielectric layer to perform an electrostatic lithography processing, thereby forming the cavity array. Next, the temperature is decreased under the glass transition temperature (Tg) to perform solidifying the dielectric layer. Finally, the electrode mask is removed from the dielectric layer.

Description

1225962

[Technical field to which the invention belongs] ^ The invention relates to a method for manufacturing a microencapsulated array of a display, and particularly to a method of forming a hollow array using an electrostatic lithography method. The manufacturing of high-precision is a technology that fills one-color electrodes with electric suction and bends into microcaps that are bent under the signal light. It is reasonable to be bright and bright. Technology】 Manufacturing of liquid crystal display (Hquid crystal display) Uthographic process is a key step for high cost and precision control. Especially in the knowledge of liquid crystal displays, the 'array' process is the most critical step because many thin film transistors have to be formed on a large substrate at the same time. Therefore, reducing the number of lithographic processes can effectively reduce the manufacturing yield of the liquid crystal display and reduce its manufacturing cost. When using the process to manufacture an array, each reduction of a mask represents a reduction in the cost of light and the number of exposures. A reduction in the number of exposures indicates that fewer steps are required, and the yield of the product is improved. Display technology is very suitable for flexible array technology, whose display technology is electrophoretic motion. That is, in microcapsules, transparent fluid and colored microparticles with positive and negative charges, those with positive charges, such as black, and those with negative charges, such as white. When the electric field acts on the upper and lower sides of the microcapsule through the substrate electrode, the two particles have different directions. The color the user sees through the transparent electrode. The display made by this technology can be read, and the contrast is sharp and the texture is similar to that of printing paper with ink, but also because it ’s reflective and has a completely updated frequency, from &

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less. These features are currently unavailable with liquid crystal displays. In the development of flexible active array technology, each pixel is driven by a transistor.

In general, molecular-dispersed liQuid crystal displays and electrophoretic displays, and some methods use photochemical phase separation to generate micro-displays. Encapsulation array. For example, the former uses phase-knife technology to make liquid crystal materials form liquid crystal particles in the process of polymer photopolymerization. In addition to this method, the latter also uses photolithography to make micro-containers (miCrocup), and then injects electrophoretic materials. Inside this miniature container. The former technology not only has restrictions on the materials used, but also makes it difficult to control the size of liquid crystal particles and the uniformity of dispersion during the photopolymerization process, so it cannot effectively display its proper characteristics. As for the latter, photolithography is required, which leads to high manufacturing costs and complicated processes. Therefore, the settings and resolution of its full color and tone cannot be taken into account at the same time. To provide another comparison

Therefore, for the disadvantages mentioned above, hollow arrays that are easy to manufacture and have low manufacturing costs are required. [Summary of the Invention] The manufacturing method of the array @ 法 云 in the above-mentioned invention is to provide a favorable background, traditional liquid Many problems and difficulties in using an electrostatic lithography method < microencapsulation of a crystal display are difficult, and the main manufacturing method of the hollow array of the present invention

Page 7 V. In the description of the invention (3) Another objective array of the present invention. The purpose is to produce a uniform size and uniform dispersion to produce a substrate glass aurora on top so that-the next, the cover. An empty array board; a state of the substrate at a distance from the substrate to the substrate. After that, = = ^ described above, the present invention provides a kind of hollow array on top of the ancient eight include the following steps: First, provide-the substrate, The above recorded i π Γ dielectric substrate; then, the above-mentioned dielectric substrate is heated above its 以上 degree and maintained at the constant temperature state; then, a ^ :: put: a specific distance above the above-mentioned dielectric substrate •, and add _ electric field = between the first mask and the dielectric substrate, and perform micro-masking: the substrate above the Γ region is completely exposed ::: by reducing the temperature to the glass transition temperature by Πί 丄 to make the above; 丨The curing of the electrical substrate; finally, the electrode light is removed and applied to the embodiment of the present invention. In addition, the ~ q γ π π < Beta recognition method includes the following steps: first, Provided-based connector, forming a dielectric substrate on the above substrate; the narrow connection 3 is heated above its glass transition temperature, and maintained at this ㈣, U — electrode mask is placed on the feeding electrical substrate Zhu Nan added an electric field to the above electrode mask and dielectric beauty. Bottom of the electrode mask: top = ο fully exposed to form a hollow array pattern; 2 Prepare the above electrode mask. Bambooized, take 1225962 An Bei a positive SS_92H5765 V. Description of the invention (4) In another type of hollow array After the substrate and the substrate are heated, the one-plus-one electric lithography process electrode mask is placed on the substrate provided with a glass transfer electrode mask on the substrate described above and formed on the substrate. The non-electrode area is reduced to that; in the end, the application method includes a dielectric temperature to be placed under the photomask and the electrode, and the glass is transferred to the electrical base material containing the following, and described Another step is described in the electrode substrate transfer temperature of the dielectric-based photomask. Then, it is maintained between the upper material of the base material and the electrode area under a thin hollow space below the photomask. In the embodiment, — First, a constant temperature state of the above-mentioned dielectric group is provided; then a specific distance is performed to perform an electrostatic dielectric substrate ratio array pattern; the above-mentioned dielectric is performed. [Embodiment] A detailed description is as follows. However, Except for the details and the scope of the present invention is not limited, the following examples are applicable. The scope of the patent application after this provides the present invention-a method of manufacturing an empty array is better implemented, including the following "丰 = 〇 海 " yoke example Medium, a kind of medium, has the following 3 steps. · First game, 1 board, with a medium on the above board. # 光 楗 给 一 基加 埶 至 豆 # EVAΜ # FREE Earth material, then After placing the dielectric substrate, the -electrode mask is placed on the above; = in this strange temperature state, then the force Π-the electric field y! _, +. Φ a certain distance above the dielectric substrate to form the electrode Light 'to proceed-static-two-especially ^^ The dielectric substrate under the electrode area is more than ulu "I " ··· · _ page 9 After the non-electrode area under the electrode mask, the temperature Lower to the curing of the glass-to-substrate; finally, remove the thin hollow array pattern of the turtle substrate explained above according to the first to third figures; move below the temperature to perform the above-mentioned dielectric electrode mask. For the above steps, please refer to the first figure. First, a dielectric substrate 101 is formed on a substrate 100. The substrate 100 is an insulating substrate material, such as glass, Shixi wafer, or plastic (polymer). The dielectric substrate 101 is a polymer material, such as epoxy resin, polymethylmethacrylate (PMMA), acrylic, or polystyrene (PS). The dielectric substrate 101 is formed by using direct printing or spin coating. Next, the above-mentioned dielectric substrate 101 is heated to a temperature above its glass transition temperature and maintained at the constant temperature state. 'Please refer to the second figure, and then place an electrode mask 102 on the dielectric substrate 101 a distance of d. The material of the electrode mask 102 includes a substrate 103 and an electrode 104, and the electrode mask 102 includes an electrode region 105 and a non-electrode region 106. The material of the above electrode 4 is, for example, indium tin oxide (IT0), aluminum (A1), chromium (Cr), zinc oxide (ZnO), or indium zinc oxides. After that, a voltage V is applied between the electrode mask i02 and the dielectric substrate ιο to perform an electrostatic lithography process. Under the action of an electric field generated by a voltage, the dielectric substrate will be deformed. The deformation result can be controlled by the shape of the electrode, such as square or round. In addition, you can control _ Case No. 92115765 Ϊ225962 V. Description of the invention (6) Distance d, voltage V and action time to achieve the required results, please refer to the third figure, which shows a distance d, voltage v After one = action time, the dielectric material ππ under the electrode region 105 of the electrode mask 102 will gradually thicken, and the dielectric substrate 108 under the non-electrode region 106 will gradually increase. thin. Therefore, the desired = empty array 109 pattern can be selected by controlling the action time. These hollow arrays 109 can be used as micro-arrays for polymer-dispersed liquid crystal displays and electrophoretic displays.

After the desired hollow array 1 09 pattern is formed, the temperature is lowered below the glass transition temperature of the above-mentioned dielectric substrate to perform the dielectric substrate = curing the curing of the above-mentioned dielectric substrate. Electrode mask 10.2 This will inject a display medium material 11 〇 into the above-mentioned hollow array 109 • 70% of the above-mentioned molecular-dispersed liquid crystal (polymer-dispersed liquid crvstai,-一 @ 夕 他 嘉 y 』show Device and electrophoresis (e 1 ectrophoret ic) display ore = "chemical array" Please refer to the fourth figure. The above display medium material is a liquid day or day material or electrophoretic material. In this embodiment, the fifth picture. It also includes a step of peeling the substrate 100, please refer to

Offered in another

It is applied to the embodiment of the present invention,

in

Page 11 1225962 V. Description of the invention (7) Fabrication board of empty array, and then describe the state of the dielectric substrate plus; then, set a distance and add an electrostatic lithographic substrate completely exposed to the glass after the transfer, move In addition to the above-mentioned method of 92115765, the following steps are included: First, a base-on-dielectric substrate is provided on the above substrate; after the autumn, it will be raised above its glass transition temperature 'and maintained at the strange temperature: An electrode reticle is placed above the dielectric substrate, and an electric field is placed between the electrode reticle and the dielectric substrate, so that the above can be formed under the electrode area of the electrode reticle to form a hollow array pattern. ; Next, the temperature is lowered to below the degree to perform the curing of the above dielectric substrate; the most electrode photomask. f? In the embodiment, 'a distance d, a voltage v, and a section: also thick, = the dielectric substrate 111 at 21 ° 5 is gradually exposed, and the substrate element is fully exposed, and the result is shown in the sixth figure. 4 beams on; case. These hollow arrays 112 and the middle-work array 112 are at first glance the micro-arrays required for the state of affairs. The above-mentioned hollow array 丨 i 2 pattern-shaped glass transition temperature of the above-mentioned dielectric substrate / After the temperature is reduced to ^, the electrode mask 102 is moved to a position of 13 and injected into the above-mentioned hollow array 112 to Wucheng is an indestructible array, and the door is delivered to the door. The display material is a liquid crystal or electrophoretic material. The above-mentioned (electrophoretic) 〇 The main advantages of the present invention are as follows on page 12 1225962 -------- case number 92115765 __ year month day _ amendment _ 5. Description of the invention (8) 1 · Can quickly produce uniform size and Dispersion uniform hollow array. 2. It can effectively solve the technical bottleneck of traditional manufacturing methods. 3. It can meet the concept of low-cost (r〇1 丨-“-r〇1) process., It is known to those skilled in the art that although the present invention uses a better example to clarify that the modifications made within the scope of God and are ranked Without departing from the scope of the patent application for this invention, such 'shall be included in the broadest interpretation of the following similar structure _; Wai = and cover in all the modifications and the best examples, can be used to distinguish goodbye from: : 1 The various changes of the present invention as described above. 1225962 a 92UB7RR made without departing from the spirit and scope of the present invention. Brief description of the diagram. Brief description 0 The correction is based on the formation of a dielectric substrate in accordance with the present invention. The illustration on the substrate: the second figure is displayed in accordance with the present invention, and an electric power is repeatedly displayed on the top of the material, and the electrode mask is placed on the dielectric base. The third figure is displayed according to the present invention. After adding electricity for a period of time, the second place is placed on the dielectric substrate. The fourth diagram is a schematic diagram of an array according to the present invention; the display medium material is injected into the hollow. The fifth diagram is an empty array according to the present invention. Schematic diagram of substrate peeling; / The sixth figure in the display media material is another one according to the present invention. * The figure is placed above the dielectric substrate and an electrode mask is added. The seventh figure after f is the seventh figure according to the present invention. Schematic diagram of material injection into a hollow array as shown in another embodiment; f ~ Display medium Page 14 1225962 Case No. 92115765 Revised diagram Brief description Schematic symbol comparison table: Substrate 1 0 0

Dielectric substrate 1 0 1, 1 0 7, 1 0 8, 111 Electrode mask 1 0 2 Substrate 1 0 3 Electrode 1 0 4 Electrode area 1 0 5 Non-electrode area 1 0 6 Hollow array 1 0 9, 11 2 Display media material 11 〇, 11 3

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I

Claims (1)

1225962 Amended Gu 9211j ^ VI. Patent application for two kinds of manufacturing methods of two-in-two arrays, including the following steps: Provide a substrate / a substrate with a dielectric substrate; heat the 4 dielectric substrate to its glass Transfer the temperature above, and maintain the constant temperature state; place the beta electrode mask over a specific distance above the dielectric substrate, and apply an electric field between the electrode mask and the dielectric substrate to perform an electrostatic Lithography & 'Make the substrate under the electrode area of the electrode mask completely exposed to form a hollow array pattern; lower the temperature below the glass transition temperature to perform the UMb of the dielectric substrate; and remove The electrode mask. 2. The manufacturing method of the hollow array according to item 1 of the scope of patent application, wherein the substrate is an insulating substrate. = · As in the manufacturing method of the hollow array of the second item of the patent application, wherein the insulating substrate is a glass or a plastic substrate. 4 · If the manufacturing method of hollow array in item 2 of the patent application is claimed, the edge substrate is-Shi Xi wafer. "Ba 5. If the manufacturing method of hollow array of item 1 of the scope of the patent application is applied, 1 is based on a molecular material. Page 16 1225962 --- Case No. 92115765 __Year Month and Day Amendment VI. Application for Patent Scope 6 • The method for manufacturing hollow arrays in item 5 of the δ month patent scope, where the molecular material is an epoxy resin. 7 · The manufacturing method of the hollow array according to item 5 of the patent application, wherein the polymer material is a polymethylmethacrylate (PMMA) 〇 8 · The hollow of the application item 5 An array manufacturing method, wherein the polymer material is an acrylic or a polystyrene (ps). 9 · The manufacturing method of the hollow array according to claim 1 of the patent scope, wherein the electrode mask includes a substrate and an electrode. 1 · If the hollow array manufacturing method of item 9 of the scope of the patent application, the material of the pole is indium tin oxide (IT0 / ,, Ming ~ Private, Chromium (Cr), oxide (Zinc oxide, ZnO) or indium zinc oxide (lndlura zinc ...). Emulsification ^ · The manufacturing method of hollow array of item 1 of the 2nd patent scope of Xianxian-5, further including: injecting a dielectric material into the The steps of hollow array. 1 2 · If the patent application shows that the media material is = the second one. Manufacturing of hollow array ... 1225962… 9 Amendment 921157RR 6. Scope of patent application 1 Significant 3. The manufacturing method of hollow arrays such as item 11 of the scope of Bathingley, where today… members do not match; I material is an electrophoretic material. Μ Supply: A method for manufacturing a substrate-in-plate empty array 'includes the following: forming a dielectric substrate on the substrate; heating the dielectric substrate to its glass constant temperature state; 碉 transfer-degree or more 'And maintained in the :: electrode mask is placed a certain distance above the dielectric substrate, and an electrophotographic mask is added to the dielectric substrate to perform-electrostatic lithography system φ = mask electrode The substrate under the region is completely exposed to form a hollow array pattern; χ: / 皿 is lowered below the glass transition temperature to cure the dielectric substrate; and the electrode mask is removed. 15. The method for manufacturing a hollow array according to item 14 of the scope of the patent application, wherein the substrate is an insulating substrate, and the substrate is a glass, a silicon wafer, or a plastic substrate. 2. The manufacturing method of the hollow array according to item 4 of the patent application scope, wherein the "electric substrate" is a polymer material, and the polymer material is an epoxy resin's methylmethacrylate, (PMMA), Page 18, 1225962 M% 9211R7RR Year VI. Patent application scope Acrylic salt-polystyrene (p0) Styrene (PS) Amendment 17 • If the patent application scope No. 4 manufacture of hollow array Method, wherein the method for forming the dielectric substrate is direct printing or spin coating 〇 1 8 · The manufacturing method of the hollow array, such as item No. 丨 4 of the scope of patent application, basin] pole, · cover Including a substrate and an electrode, the material of the electrode is mdmm tin oxide (IT0), aluminum (A1), chromium (Cr), zinc oxide (ZnO) or indium zinc oxide (indium ζίηε oxides) 〇19. If the hollow array manufacturing method of item 14 of the scope of patent application, a step of injecting a display medium material into the hollow array. 2 · -If the hollow array manufacturing method of item 19 of the scope of patent application, Which the " , I do not match; I material is a liquid crystal material or an electrophoretic material. 21 ·-A method for manufacturing a hollow array, comprising the following steps: providing a substrate having a dielectric substrate on the substrate; heating the dielectric substrate to a constant temperature state of its fritted clay; The -electrode mask is placed in the field of the dielectric substrate between the electrode mask and the dielectric substrate. 1225962 --- Case No. Amendment VI. The scope of the patent application for the dielectric substrate lowers the temperature of the glass to the glass transition than the electrode; ㈡ = curing; Remove the electrode mask. 22. If the substrate in the scope of patent application No. 21 is an insulating substrate. This method is as follows, wherein the insulating substrate of the hollow array according to item 22 of the patent application is a glass or a plastic substrate. / ，， 中 中 24. If the hollow insulation substrate of the 22nd patent application scope is a manufacturing method of a stone evening circle array, where: Dianru / ΛThe hollow array manufacturing method of the 21st patent scope, wherein the base The material is a polymer material. 2-6. The method for manufacturing a hollow array according to item 25 of the application, wherein the polymer material is an epoxy resin. 〃 2 ^ 7 · The manufacturing method of the hollow array according to item 25 of the application, wherein the polymer material is a polymethylmethacrylate (PMMA) or a polystyrene. Page 20 1225962 Case No. 92115765_ ± VI. Application scope of patent (polystyrene, PS) 〇 Amendment 2 8 · For the manufacturing method of hollow array of item 25 of the scope of application for patent, the south molecular material is * 1 acrylic. 29. The method of manufacturing a hollow array according to item 21 of the patent application, wherein the electrode mask includes a substrate and an electrode. 30. The manufacturing method of the hollow array according to item 29 of the patent application, wherein the material of the electrode is indium tin oxide (IT0),! Lu (A1), chromium (cr), zinc oxide (Zn〇) or indium zinc oxides. 31. If the manufacturing method of the hollow array of item 21 of the patent application, the step of injecting a display medium material into the hollow array. 32. If the method for manufacturing a hollow array according to item 31 of the scope of the patent application, the semiconductor material is a liquid crystal material. /, 3 3 · _ The manufacturing method of the hollow array as described in the patent application No. 3 丨 The display media material is an electrophoretic material. Where the I4. Will be dedicated to the manufacturing method of hollow arrays, and more inclusive Page 21 1225962 Case No. 92115765 Revised Page 22