TWI224876B - Method for forming an LED device with a metallic substrate - Google Patents

Abstract

An LED epitaxial layer and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial layer. A plurality of second electrodes is formed on the surface of the LED epitaxial layer. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial layer are cut to form a plurality of LED devices.

Description

1224876 V. Description of the invention (1) Technical field to which the invention belongs: The present invention relates to a method for forming a light emitting diode, and more particularly to a method for forming a light emitting diode with a metal substrate. Prior art: The operating principle of a light-emitting diode is that light is emitted when a current is directed into the active layer of a semiconductor. The structure of a common light-emitting diode is shown in the first A diagram. In the first diagram A, a light emitting diode epitaxial layer 110 is formed on a substrate 11 and P junctions 1 2 6 and N junctions 1 1 8 are formed above and below the structure, respectively. The light emitting diode epitaxial layer 1 10 includes an N-type semiconductor layer 1 12, an active layer 1 1 4, and a P-type semiconductor layer 1 16. The material of the substrate 1 1 7 of the light-emitting diode having such a structure is a conductive material, so that the current 1 30 enters through the P junction 1 2 6 and sequentially passes through the P-type semiconductor layer 116, the active layer 114, and the N-type semiconductor. The layers 1 1 2 and the substrate 1 1 7 finally flow out from the N junction 11 8. When the current density of the active layer 1 1 4 reaches a critical value, light will be emitted. The N-type semiconductor layer 1 12, the active layer 1 1 4 and the P-type semiconductor layer Π 6 are collectively referred to as a light-emitting diode epitaxial layer 1 1 0. The above structure is a vertical structure, so the manufacturing process is quite simple, and only has a single joint. Therefore, in the packaging process, it is easier to wire (B ο n d i n g), and the yield is higher. However, the heat dissipation effect of the substrate is not good. Therefore, the operating temperature of the light-emitting diode will be higher, resulting in

1224876 V. Description of the invention (2) The service life of the light-emitting diode is shortened, and the reliability of the light-emitting diode is reduced. Moreover, as the operating temperature of the light-emitting diode increases, the light-emitting efficiency also decreases. In addition, high-power light-emitting diodes require higher currents to produce high-brightness light, and higher currents result in higher heat generation. Therefore, the high-power light-emitting diode must have a better heat dissipation structure. The traditional structure of such a light emitting diode cannot provide a good heat dissipation effect. As shown in Fig. 1B, the structure of the GaN light emitting diode is another type of light emitting diode. The material of the substrate is sapphire, which is a non-conductive material, so the substrate different from the first A picture is a conductive substrate. In the first B diagram, an N-type gallium nitride semiconductor layer 132, an active layer 134, and a P-type gallium nitride semiconductor layer 136 are sequentially formed on the substrate 1 37. Since the substrate is a non-conductive material, both the P junction 1 48 and the N junction 1 4 6 need to be formed on the other side of the substrate, that is, on the same side. Therefore, a part of the gallium nitride epitaxial layer 14 0 (including the N-type gallium nitride semiconductor layer 13 2, the active layer 1 34, and the P-type gallium nitride semiconductor layer 1 3 6) is etched to be exposed. A part of the N-type GaN semiconductor layer has a surface 1 3 3, and an N electrode 1 4 6 is formed on the surface 1 3 3. Since the conductivity of the P-type gallium nitride semiconductor layer 1 3 6 is rather poor, a contact layer must be formed on the P-type gallium nitride semiconductor layer 1 3 6 to assist the diffusion of current, and to avoid contact between the contact layer The light generated by the light emitting diode has a problem of shielding, so it needs to be a transparent conductive material. Therefore, a transparent contact layer 139 needs to be formed on the P-type gallium nitride semiconductor layer 136, and an opening is formed on the transparent contact layer 139, so that the P electrode 14.8 is formed on the opening and is in contact with the P-type nitrogen. The gallium semiconductor layer is in contact.

Hill Page 8 1224876 V. Description of the invention (3) The above structure of another light-emitting diode is not completely vertical. Compared with the structure of the first figure A, the manufacturing steps are more complicated. Moreover, this structure has two joints on the front side, which makes the process of packaging more complicated, and the yield will be affected. In addition, since the substrate is made of a non-conductive material, its heat dissipation effect is also poor, and its antistatic (ESD) capability is also poor. Therefore, the conventional technology uses the light-emitting diode structure of the first A diagram to further form a permanent substrate on the opposite surface of the substrate of the light-emitting diode epitaxial layer, and then remove the original substrate. In this way, the material of the permanent substrate can be directly used as required (for example, good conductivity and good heat dissipation). However, the permanent substrate is generally bonded to the light-emitting diode stupid layer using wafer bonding (Wafer B n d i n g). The wafer bonding needs to be performed in a high temperature and high pressure environment, and the flatness of the bonding surface is required to be relatively high. Therefore, the technical difficulty of wafer bonding is relatively high, and the yield is relatively reduced. Summary of the Invention: In view of the above-mentioned background of the invention, the problems and disadvantages of the method for forming a light-emitting diode provided by a conventional method, the main purpose of the present invention is to provide a method for forming a light-emitting diode with a metal substrate. A metal permanent substrate is formed on the light emitting diode to form a light emitting diode structure with good heat dissipation effect.

Page 9 1224876 V. Description of the invention (4) Another object of the present invention is to provide a method for forming a light-emitting diode with a metal substrate. A permanent metal substrate is formed on the light-emitting diode to form a light-resistant diode. Light-emitting diode structure with electrostatic effect. Another object of the present invention is to provide a method for forming a light-emitting diode with a metal substrate. Since the light-emitting diode has a vertical structure and has only a single conductive pad, the junction point is the same as that in the conventional technology. The light emitting diode structure on the side is simpler and easier to form. Another object of the present invention is to provide a method for forming a light emitting diode with good heat dissipation effect, so that the light emitting diode can be operated at a large current, and the brightness of the light emitting diode can be effectively improved. A further object of the present invention is to provide a method for forming a light emitting diode to improve the yield of the light emitting diode. According to the above-mentioned object, the present invention provides a method for forming a light-emitting diode having a metal substrate, including the following steps. First, a temporary substrate is provided, and a light emitting diode epitaxial layer and a first electrode layer are sequentially formed on the temporary substrate. Then, a metal permanent substrate is formed on the first electrode layer ^^ L. Next, the temporary substrate is removed, one surface of the light emitting diode stupid layer is exposed, and a plurality of second electrodes are formed on the surface of the light emitting diode stupid layer. Finally, the metal permanent substrate and the first electrode are cut.

Page 10Ϊ224876 V. Description of the invention (5) layer and light-emitting diode worm crystal layer to form a plurality of light-emitting diode photodiodes_plates, and shape-etch the light-emitting diodes and emit a plurality of light-emitting substrates And the grains of the dielectric layer are at the end of each other. The present invention also provides a method for forming metal beauty, including the following steps. First, the hairy-light-emitting diode worm crystal layer of the soil plate is attached to the temporary substrate :::

Grains and form a plurality of first electrode layers m = i-on the pole body grains. Next, # 4 of the I light emitting diode is stupid. Then two or two layers are filled so that the metal permanent substrate is covered with the plurality of light-emitting 3: surface is exposed: again, the dielectric layer is removed and a complex is formed :: the corresponding plurality of light-emitting diode worms are decaying ^ n ^ m ^ ^ 4, Edition Cat Uncle's above surface. d is a water-based substrate to form a plurality of light-emitting diodes. Way: hair light emitting diode with metal substrate, 乂 ′. First, a temporary diode layer is provided to form a light-emitting diode epitaxial layer on the temporary substrate, and a photodiode stupid layer is formed on the temporary substrate, and the polarizer grains are etched. Then, a plurality of light-emitting diode electrodes are formed on each of the corresponding day-to-day rental rates I to form a plurality of light-emitting diode electrodes ^ to fill the plurality of light-emitting diode crystal grain shapes ^ γ A dielectric promoting layer covers a plurality of first layers: = U 'formed ~ after' to form a second dielectric layer on top of the conductive layer and the first dielectric layer. The electric layer is on the V electric promotion layer, corresponding to 1224876 V. Description of the Invention (6) A vertical direction area, and a metal permanent substrate is formed on the conductive promotion layer to fill the gap between the second dielectric layers. Then, the temporary substrate is removed to expose the surfaces of the plurality of light emitting diode crystal grains. Then, the first dielectric layer is removed, and a plurality of second electrodes are formed on the corresponding surfaces of the plurality of light emitting diode epitaxial grains. Finally, the second dielectric layer is removed, and the conductive promoting layer is cut to form a plurality of light emitting diodes. method of execution:

Some embodiments of the present invention will be described in detail as follows. However, with the exception of the embodiments described in detail, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patent applications. Furthermore, in order to provide a clearer description and easier understanding of the present invention, the parts in the diagram are not drawn according to their relative dimensions, and certain dimensions have been exaggerated compared to other related dimensions; irrelevant details have not been completely drawn. Out for simplicity of illustration.

The spirit of the present invention is to form a permanent metal substrate and remove the substrate used for epitaxial light-emitting diodes. In addition to the metal substrate, it helps to remove the heat generated during the operation of the light-emitting diode, so as to increase the heat dissipation effect of the light-emitting diode. And because the material of the formed permanent substrate is metal, it can provide a fairly good antistatic effect. Furthermore, since the light-emitting diode 1224876 of the present invention has a vertical structure and only a single conductive pad, the structure is relatively simple and easy to form, so the production yield of the light-emitting diode can be improved. . In addition, in the forming method of the present invention, a part of the structure layer of the light-emitting diode may be selected to form a pre-cut groove in advance, so that the light-emitting diode is cut into separate light-emitting diode crystals when the epitaxial layer is peeled off and finally cut. The thickness required for cutting is reduced, making the light-emitting diode easier to cut and separate.

In the present invention, a gallium nitride light emitting diode (GaN-based LED) stupid crystal structure is grown on a sapphire temporary substrate as an example. The metal permanent substrate of the present invention can be completed by electroplating, metal cold-forming, evaporation or sputtering. The following embodiments of the present invention illustrate the present invention by electroplating, but are not intended to limit the present invention. A method for forming a metal permanent substrate. The second diagram A to the second G diagram are schematic diagrams of a process for forming a light emitting diode according to a preferred embodiment of the present invention.

First, as shown in FIG. 2A, a light-emitting diode epitaxial layer 12 is formed on the temporary substrate 10. The light-emitting diode epitaxial layer 12 includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer in this order. Then, as shown in FIG. 2B, a first electrode layer 14 is formed on the light emitting diode epitaxial layer 12. The first electrode layer 14 can form a good ohmic contact with the light emitting diode epitaxial layer 12 to reduce the contact resistance and allow the current to be effectively diffused to the entire light emitting diode.

Page 13 1224876 V. Description of the invention (8). Preferred materials of the first electrode layer 14 are nickel oxide and gold. Next, a conductive promoting layer 16 is formed on the first electrode layer 14 as shown in the second C diagram. The conductivity promotion layer 16 mainly plays a role in assisting the formation of the permanent metal layer 20. For example: The conductive promotion layer 16 is used as a plating seed conductive layer in the subsequent plating during electroplating to promote the formation of the permanent metal layer 20. As described above, the present invention can also form the permanent metal layer 20 in a manner other than electroplating. Therefore, the formation of the conductive acceleration layer 16 is an optional process step.

Then, a metal permanent substrate 20 is formed on the conductive promoting layer 16 as shown in the second D diagram. The material of the metal permanent substrate 20 can be selected according to the needs of the light-emitting diodes to be formed. The preferred materials are silver, nickel, titanium, chromium, flip, handle, zinc, Ming, indium, tin, copper, gold, Hafnium, manganese, or an alloy or multilayer structure of the above metals. Different metals have suitable formation methods. For example: gold, flip, metal, metal, zinc, nickel, titanium, molybdenum, manganese and their alloys are suitable for formation by evaporation or sputtering; nickel, chromium, zinc, silver, tin, copper, gold, silver 'Molybdenum and manganese are suitable for electroplating; and palladium, indium, tin or their alloys are suitable for forming by metal cold forming. The metal permanent substrate 20 preferably has a thickness ranging from 10 micrometers to 300 micrometers, and more preferably 40 to 150 micrometers.

Next, the temporary substrate 10 is removed, as shown in the second E diagram. The method for removing the temporary substrate 10 may be selective money engraving (S e 1 e c t i v e 1 y Etching), lapping / polishing (Lapping / Polishing), wafer lift-off (Wafer Lift-Off) or a combination thereof. Remove temporary substrate 10

Page 14 ^ 4876 V. Description of the invention (9) ——12 The surface that was originally connected to the temporary substrate 10 is moxibustion, and the light emitting diode epitaxial layer f is exposed. As shown in the second F diagram, the naked-amplifier structure of the smoke-λ ^ photodiode epitaxial layer 12 is reversed to make the above hair open; a plurality of second electrodes 22: 1: : Ff is a light emitting diode formed by Z on the bare surface. In the end T ^ _22 corresponds to a luminous line cutting the above-mentioned luminescence: polar body; ^ Aituo-, cutting along the virtual electricity promotion layer 16, _ an electrode containing metal water substrate 20, and a plurality of luminescence is formed. Diode. * Light monopole epitaxial layer 1 2), based on the pictures of the third three A to the third j, the dry sound of the light-emitting diode ㉟ steam 裎 = this, the other embodiment of the preferred embodiment ΓThird Figure 1 / 繁 τ ί The second and second figures from G to G are connected to the light-emitting diode stone / 丨 2, which is a temporary substrate 1 丨 Norichi layer 12 contact surface part It is easier to remove the dielectric layer with a dielectric layer [8]. It is easier to remove the substrate, and the light-emitting diode incision J can be cut with only two fewer layers, which is easier to cut. As shown in Figures 3A to 3B, a light-emitting diode-stone layer 1 + 2 is formed on the temporary substrate 丨 0, and then a light-emitting diode stupid '7' temporary substrate is formed by money. Up to 10, to form a light-emitting diode epitaxial grain 1 2 A. Next, as shown in FIG. 3 and FIG. 3C, each of the light-emitting diode epitaxial grains 12A has a shape of y and a layer 14A. The preferred material of the first electrode layer 14A is nickel oxide and Jinle, which can form a good ohmic contact with the light-emitting diode epitaxial grains 12A, thereby reducing the 1224876. V. Description of the invention (10) '—Joint impedance. The order of the above two steps of etching the light emitting diode epitaxial layer 2 and forming the _ electrode layer 1 4 A can be interchanged without affecting the formation of the light emitting diode of the present invention. ° Then, a dielectric layer 18 is filled in the gap between the light-emitting diode epitaxial grains 1 2 A to approximately the same height as the light-emitting diode epitaxial grains 12 2A; subsequently, a conductive promotion layer 16 is formed. Above the first electrode layer 14 A and the dielectric layer 18, as shown in the third D to second E diagrams. Similarly, the present invention can also form the permanent metal layer 20 by electroplating or other methods. Therefore, the formation of conductive promotion layer 16 is an optional process step. The preferred properties of the dielectric layer 8 include silicon dioxide, silicon nitride, spin-on-glass (SOG), photoresist, or high molecular weight. The polymer can be resin (A BS resi η), epoxy resin (Epoxy), acrylic resin (PMMA), acrylonitrile butadiene styrene copolymer (aery 1 on itir 1 e butadiene styrene copolymer), Polymethyl methacrylate, or poiysuifones, polyetherimides, polyimides, poly the rsu If ones, poly Thermoplastic polymers such as amines and imines, polyphenylene su 1 fide, and the like. Then, a metal permanent substrate 20 is formed on the conductive promoting layer 16 as shown in FIG. 3F. The material of the metal permanent substrate 20 can be selected according to the light-emitting diodes to be formed. The preferred materials are silver, nickel, titanium, chromium,

Page 16 A224876 V. Description of the invention (11) Turn, & Ji, zinc, Shao, indium, tin, copper, gold, molybdenum, Iman, or alloy or multilayer structure of the above metals. As mentioned above, different metals have suitable formation methods, such as evaporation, sputtering, electroplating, or metal cold forming. Next, 'remove the temporary substrate 10', as shown in FIG. 4G. The method for removing the temporary substrate 10 can be selective etching (se 1 ective 1 y Etching), grinding / polishing (Lapping / pohshing), wafer lift-off (W afer L ift-0 ff), or a combination thereof. . After the temporary substrate ^ is removed, the light-emitting diode epitaxial die 1 2 A originally exposed to the temporary substrate 丨 q will be exposed. A table, as shown in the third figure and the third figure I, the light-emitting diode surname ,,, and Ό are not stained; jjj hit gold so that the bare surface of the above light-emitting polar stupid grains 1 2 A faces upward Then, a second dielectric layer 18 is formed on the exposed surface of the #, τ light-emitting diode stupid grains 1 2 A, and each light-emitting pole stupid grains 12 A is formed. The order of the two steps of the L 2 2 parallel layer 18 and the formation of the second electrode 22 is the effect of removing the dielectric. Finally, as shown in the third figure, the structure of the light emitting diode f (including the permanent metal substrate 20 and the conductive substrate 16) is switched along to switch to form a plurality of light emitting diodes. Figures 4A to 4L are diagrams of the process of a more complex photodiode of the present invention. The shape of the known example requires 1m of the light-emitting diodes to be cut. The embodiment has a larger population and is easier to cut.

1224876 V. Description of the invention (12) As shown in Figures 4A to 4C, a light emitting diode stupid layer 12 is formed on the temporary substrate 10, and then the light emitting diode epitaxial layer is etched. 12 is etched until the temporary substrate 10 is formed, so as to form light-emitting diode epitaxial grains 12 A. Next, a first electrode layer 14A is formed on each of the light-emitting diode epitaxial grains 12A. The preferred material of the first electrode layer 14A is nickel oxide and gold, which can form a good ohmic contact with the light-emitting diode epitaxial grains 1 2 A, thereby reducing the joint resistance. The order of the two steps of the money-engraved light-emitting diode stupid crystal layer 12 and forming the first electrode layer 14A can be interchanged without affecting the formation of the light-emitting diode of the present invention. Then, the first dielectric layer 18 is filled into the gap between the light-emitting diode epitaxial grains 1 2 A to approximately the same height as the light-emitting diode epitaxial grains 1 2 A; subsequently, a conductive promotion layer is formed. 16 is on the first electrode layer 14 A and the first dielectric layer 18, as shown in the fourth D to fourth E diagrams. Similarly, the present invention can also form the permanent metal layer 20 by electroplating or other methods. Further, as shown in the fourth F diagram, a second dielectric layer 24 is formed on the conductive promoting layer 16. The position of the second dielectric layer 24 corresponds to the position of the first dielectric layer 18. Generally, the thickness of the second dielectric layer 24 should be equivalent to the thickness of the metal permanent substrate 20. The thickness of the second dielectric layer 24 is preferably in the range of 10 micrometers to 300 micrometers, and more preferably in the range of 40 micrometers to 150 micrometers. The preferred materials for the first dielectric layer 18 and the second dielectric layer 24 are silica, nitride, spin-coated glass, photoresist, or polymer. And the polymer can be

Page 18 1224876 V. Description of the invention (13) Resin (ABS resi η), epoxy resin (E ρ ο X y), acrylic resin (PMMA), acrylic copolymer (acrylonitirle butadiene) styrene copolymer), polymethyl methacrylate, or polysulfones, polyetherimides, polyimides, polyamide (P〇1 ythersu 1 fones),? Thermoplastic polymers such as polyamideimide and polyimide sulfide (poiphenylene s u 1 f i d e). Wing-cho ’s indium structure plating pattern; G-pole ιε full 42, filled with photo-platinum such as hair, 2, chrome plate high-formation, base isomorphous titanium 4 long-time 2 w, Wing layer nickel TV, gold But silver has two grades, material shape and g material, slightly 2 books about the plate is connected to the base for a long time, the dielectric display required, the words, the 4 genus 2 election, gold, layer, come There are as many or assorted gold layers in the aluminum junction vaporized layer, and the combined formula is described as gold. The top-fitting type is suitable or tangible, belongs to fierce gold, belongs to the same gold, non-or gold, plating, electroplating copper, and tin plating, such as splashing. Next, remove the temporary substrate 10, such as the fourth ΗFigure. The method of temporarily removing the substrate 10 may be selective etching (s e 丨 e c t 丨 ν㊀ 丄 y Etching), lapping / polishing (Lapping / poshing), and lift-off (Wafer Lift-Off). After the temporary substrate 10 is removed, the surface that was originally connected to the temporary substrate 10 on the second day after the light emitting diode 1 2A is exposed.

1224876Page 19

V. Description of the invention (14) As shown in Figures I and J, the structure of the light-emitting diode is reversed so that the exposed surface of the above-mentioned light-emitting diode 1 2 A faces upward, and A second electrode 22 is formed on the exposed surface of each of the light-emitting diode crystal grains 1 ′ 2 A and the first dielectric layer 18 between each of the light-emitting diode crystal grains 1 2 A is removed. Similarly, the first dielectric layer 1 is removed. The two steps of carefully forming the second electrode 2 2 are interchangeable in order. The last step is to remove the second dielectric layer 2 4 and cut the dotted line 3 0. The above-mentioned light emitting diode structure (ie, the conductive promoting layer 16) is cut, such as i F in the fourth K-picture to the fourth L-picture, to form a plurality of light-emitting diodes. Since the conductive promoting layer 16 is not thick and easy to break, only a slight force can be applied to separate the white of the light-emitting diode. In addition, the N-type semiconductor layer 12 in the epitaxial layer of the light-emitting diode in the present invention Will be in contact with the second electrode 22, that is, the exposed surface of the light emitting diode stupid layer is light emitting --- the surface of the N-type semiconductor layer of the polar epitaxial layer 12 and the N-type semiconductor layer of the present invention The current diffusion effect is good, so it is not necessary to form a current diffusion layer between the N-type semiconductor layer and the second electrode 22. When the present invention can also selectively form a current diffusion layer between the N-type semiconductor layer and the second electrode 22 In order to help the current to diffuse to various parts of the light-emitting diode, the overall light-emitting efficiency of the light-emitting diode is improved. The invention forms a metal permanent substrate on the structure of the light-emitting diode. The good dispersion of the metal can be used to produce the light-emitting diode during operation. Page 20 1224876 V. Description of the invention (15) Take it away quickly to reduce the temperature at which the light-emitting diode operates. In addition, due to the good heat dissipation effect of the metal, the current value that the light emitting diode can withstand can be effectively improved. Furthermore, since the material of the permanent substrate is metal, it can be used as an antistatic protective layer in the manufacturing process to prevent the light emitting diode from being damaged by the static electricity generated during the manufacturing process. The light-emitting diode structure formed by the present invention is a vertical structure and has only a single conductive pad (Single Pad). Therefore, the structure is relatively simple and easy to form, so the yield of the light-emitting diode can be improved.

For those skilled in the art, although the present invention is explained above with a preferred example, it is not intended to limit the spirit of the present invention. Modifications and similar arrangements made without departing from the spirit and scope of the present invention should be included in the scope of patent applications described below, and such scope should be consistent with the broadest interpretation covering all modifications and similar structures. Therefore, a preferred embodiment of the present invention as explained above can be used to identify various changes made without departing from the spirit and scope of the present invention. 1224876 Schematic illustrations Schematic illustrations: The first diagram A to the first diagram B are the structures of the light-emitting diodes in the conventional technology. The second diagram A to the second diagram G are one of the preferred embodiments of the present invention. A schematic flow chart of forming a light emitting diode according to the embodiment;

Figures A through J are diagrams illustrating the process of forming a light emitting diode according to another preferred embodiment of the present invention; and Figures A through L are the other preferred embodiments of the present invention. The schematic flow chart of the example of forming a light emitting diode. Graphic symbol comparison table: 1 0 temporary substrate 1 2, 1 2 A light emitting diode epitaxial layer 14, 14A first electrode layer

1 6 Conduction promoting layer 18 Dielectric layer 2 0 Permanent metal layer 2 2 Second electrode 24 Second dielectric layer

111

Page 221224876 Brief description of the diagram Layer B 30 Cut dotted line 1 1 0 Light-emitting diode 1 1 2 N-type semiconductor layer 1 1 4 Active layer 1 1 6 P-type semiconductor layer 1 1 7 Substrate 1 1 8 N junction Point 1 2 4 Transparent contact layer 1 2 6 P junction 1 3 0 Current 1 3 2 N-type gallium nitride semiconductor layer 1 3 3 Surface of the n-type gallium nitride semiconductor layer 1 3 4 moving layer 1 3 6 P-type nitrogen GaN semiconductor layer 1 3 7 substrate 1 3 9 transparent contact layer 1 4 0 gallium nitride epitaxial layer 1 4 6 N junction 1 4 8 P junction

Page 23

Claims (1)

1224876 VI. Scope of patent application Patent scope: 1. A method of forming a light-emitting diode with a metal substrate, including the following steps: providing a temporary substrate;. Sequentially forming a light-emitting diode epitaxial layer and a first An electrode layer on the temporary substrate; forming a metal permanent substrate on the first electrode layer; removing the temporary substrate to expose a surface of the light emitting diode epitaxial layer Forming a plurality of second electrodes on the surface of the light emitting diode epitaxial layer; and cutting the metal permanent substrate, the first electrode layer, and the light emitting diode epitaxial layer to form a plurality of light emitting diodes Polar body. 2. The method for forming a light-emitting diode with a metal substrate according to item 1 of the scope of patent application, further comprising forming a conductive promoting layer between the first electrode layer and the metal permanent substrate. 3. The method for forming a light-emitting diode with a metal substrate according to item 2 of the scope of patent application, wherein the step of forming a metal permanent substrate is completed by electroplating, metal cold forming, evaporation, sputtering, or a combination thereof. 4. Form a light-emitting diode with a metal substrate as described in item 3 of the patent application Page 24 1224876 VI. Method of applying for a patent, wherein the metal permanent substrate is silver, titanium, titanium, chromium, cast iron, zinc, metal, indium, tin, copper, gold, molybdenum, manganese, alloys thereof Or a multilayer structure. 5. The method of forming a light-emitting diode with a metal substrate according to item 2 of the patent application scope, wherein the step of removing the temporary substrate is performed by selective etching, grinding / polishing, wafer lift-off, or a combination thereof. 6. The method for forming a light-emitting diode with a metal substrate according to item 2 of the scope of patent application, wherein the surface of the light-emitting diode epitaxial layer is an N-type semiconductor layer which is one of the light-emitting diode epitaxial layers One surface. 7. A method of forming a light-emitting diode with a metal substrate, including the following steps: providing a temporary substrate; forming a light-emitting diode stupid layer on the temporary substrate, and etching the light-emitting diode epitaxial Layer up to the temporary substrate to form a plurality of light emitting diode crystal grains; Forming a plurality of first electrode layers on the corresponding plurality of light emitting diode dummy grains to form a dielectric layer so that the dielectric layer fills the spaces between the plurality of light emitting diode epitaxial grains; Forming a metal permanent substrate so that the metal permanent substrate covers the plurality of light emitting diodes and the dielectric layer; Page 25 1224876 VI. Patent application scope Remove the temporary substrate to expose the surface of the plurality of light-emitting diodes; remove the dielectric layer; form a plurality of second electrodes at the corresponding ones of the plurality A plurality of light-emitting diodes are formed on the surface of the light-emitting diode chip and the permanent metal substrate is cut to form a plurality of light-emitting diodes. 8. The method for forming a light-emitting diode with a metal substrate according to item 7 of the scope of the patent application, further comprising forming a conductivity promotion layer between the first electrode layer and the metal permanent substrate. 9. If the method for forming a light-emitting diode with a metal substrate as described in item 8 of the scope of the patent application, the step of forming a metal permanent substrate is completed by electroplating, metal cold forming, evaporation, sputtering or a combination thereof . 10. The method for forming a light-emitting diode with a metal substrate according to item 9 of the scope of the patent application, wherein the metal permanent substrate is silver, nickel, titanium, chromium, starting, handle, zinc, indium, tin, It is formed of copper, gold, indium, manganese, its alloy or multilayer structure. ll. The method for forming a light-emitting diode with a metal substrate according to item 8 of the scope of patent application, wherein the step of removing the temporary substrate is performed by selective etching, grinding / polishing, wafer lift-off, or a combination thereof carry out. Page 26 1224876 VI. Application for patent scope 12 2. Method of forming a light emitting diode with a metal substrate as described in item 8 of the scope of patent application 5 wherein the surface of the light emitting diode stupid layer is the light emitting diode A surface of an N-type semiconductor layer, which is a bulk epitaxial layer. 1 3. The method for forming a light-emitting diode with a metal substrate as described in item 8 of the scope of the patent application, wherein the material of the dielectric layer is silicon dioxide, nitride nitride, spin-on glass, photoresist, polymer, or Its combination. 14. The method for forming a light-emitting diode with a metal substrate as described in item 13 of the scope of the patent application, wherein the south molecular system is a resin, a bad oxygen resin, an acrylic resin, and acrylonitrile butadiene copolymer. , Polyacrylic acid acrylic resin, polystyrene, polyetherimide, polyimide, polyetherimide, polyimide or polysulfide. 15. A method for forming a light-emitting diode having a metal substrate, including the following steps: providing a temporary substrate; forming a light-emitting diode epitaxial layer on the temporary substrate; and etching the light-emitting diode Forming the crystal layer to the temporary substrate to form a plurality of light emitting diode crystal grains; forming a plurality of first electrode layers on the corresponding plurality of light emitting diode crystal grains; forming a first dielectric 1 1 II 1 1 11 1 1 I Page 27 1224876 6. The scope of the patent application forms a conductive promotion layer to make the first dielectric layer fill the gaps between the plurality of light emitting diodes. A conductive promoting layer covers the plurality of first electrode layers and the first dielectric layer; forming a second dielectric layer on a region of the conductive promoting layer corresponding to the vertical direction of the first dielectric layer; forming A metal permanent substrate is placed on top of the conductive acceleration layer to fill the gap between the second dielectric layers; the temporary substrate is removed to expose the surfaces of the plurality of light emitting diodes; and the first Dielectric layer Forming a plurality of second electrodes on the surface of the corresponding plurality of light emitting diode stupid grains, respectively, removing the second dielectric layer; and cutting the conductive promoting layer to form a plurality of light emitting diodes. 16. The method for forming a light-emitting diode with a metal substrate as described in item 15 of the scope of patent application, wherein the step of forming a metal permanent substrate is performed by electroplating, metal cold forming, evaporation, sputtering, or a combination thereof Way to finish. 1 7. Form a light emitting diode with a metal substrate as described in item 15 of the scope of patent application Page 28 1224876 VI. Scope of Patent Application Polar method, wherein the step of removing the temporary substrate is completed by selective etching, grinding / polishing, wafer lift-off or a combination thereof. 19. The method for forming a light-emitting diode with a metal substrate according to item 15 of the scope of patent application, wherein the light-emitting diode stupid crystal layer. The surface is one of the light-emitting diode epitaxial layer N A surface of the semiconductor layer. 20. The method for forming a light-emitting diode with a metal substrate as described in item 15 of the scope of patent application, wherein the material of the first dielectric layer is silicon dioxide, silicon nitride, spin-on glass, photoresist, Polymer or combination thereof. 2 1. The method for forming a light-emitting diode with a metal substrate according to item 20 of the scope of patent application, wherein the polymer is a resin, an epoxy resin, an acrylic resin, and acrylonitrile butadiene styrene copolymer , Polyacrylic acid acrylic resin, polystyrene, polyetherimide, polyimide, polyetherimide, polyimide or polysulfide. 2 2. The method for forming a light-emitting diode with a metal substrate according to item 16 of the scope of patent application, wherein the material of the second dielectric layer is silicon dioxide, nitride nitride, spin-on glass, photoresist, Polymer or combination thereof. 2 3. The method for forming a light-emitting diode with a metal substrate as described in item 22 of the scope of the patent application 5 wherein the molecule is resin, bad oxygen resin, acrylic resin, acrylonitrile butadiene copolymer 、 Polyfluorenyl acrylic grease, .Page 29 1224876 VI. Scope of patent application Polyvinyl alcohol, polyetherimide, polyimide, polyether alcohol, polyimide or polysulfide.