TWI224872B - White light-emitting diode and its manufacturing method - Google Patents

Abstract

A kind of white light-emitting diode (LED) and its manufacturing method are disclosed in the present invention. The diode contains the first conducting electrode, a substrate, the first light-emitting part, two buffering layer regions (BxGa1-xP and InxGa1-xN) with gradient variations, the second light-emitting part and the second conducting electrode. When an external voltage difference is added between the second conducting electrode and the first conducting electrode, a current is generated to flow through the second light emitting part, the buffering layer region and the first light-emitting part such that the active layer of the first light-emitting part emits light within the first wavelength range and the second active layer of the second light-emitting part emits light within the second wavelength range. By mixing light within the first wavelength range together with light within the second wavelength range, white light can be obtained.

Description

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[Technical field to which the invention belongs] The present invention has 4 main ports 丨 # θ θ% reward diode and its masterpiece 4, especially hunting for the r, clothing method with a gradient change from the two layers' ^ buffer layer Area (BY G a) P; 5 nr λΤ Ν pass to the yellow light diode and blue light diode can be-times finished 'with [prior art] & Light Emitting Mould (UD) : When the semiconductor element 1 is passed by a current: = (respectively negatively charged electrons and positively charged holes) The phase of the previous: Month < 3 Ϊ is released in the form of light. 2. Will: Light can be emitted with very small current, and belongs to cold; hair ;, non-filament lamp, thermal luminescence i, has the advantages of high brightness, small size, power consumption: less heat generation and long life of the mine. The luminous characteristics of traditional light-emitting diodes are based on a single main peak peak wavelength and a narrow half-width-of-height (fuU width 0f (lgnle maxim ·, FWHM)). Therefore, the ratio emitted by the light-emitting diode is a very pure single Color light, such as f-line white light from aluminum gallium arsenide light emitting diode, green light from gallium phosphide light emitting diodeIn addition, through the 4, color system, or the same material system but different composition ratios, π㈤> N _ 4 1 to produce light-emitting diodes with different colors and different brightness, such as the composition of the scale of phosphorous and arsenic and kun Ratio, or the composition ratio of aluminum, bonds', edges and indium in AlGaIn, can produce high-brightness electrodes covering red, yellow, and green. The composition and the selected structure and manufacturing method of the above materials The photodiodes emit only pure monochromatic light (half-width-height and narrow-width) ^, one main wave earlier

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Since the invention of light-emitting diodes so far, people have been using light-emitting diodes as illumination light sources. With the continuous progress of light-emitting diode manufacturing and the development of new materials and applications, especially the emergence of the white body, the The application field of light-emitting diodes gradually reaches to the limit. The body has a small volume (multiple pieces, multiple combinations), calorific value = first two: upper) power consumption =, ,, low current start), long life (1 ^ ^ / Λ ( Can operate at high frequency), environmental protection (vibration resistance, shock resistance :) can be flat :: back: 'no pollution, there are the disadvantages of incandescent light bulbs with [green lighting light source] (high power consumption, fragile and iV 疋) In the next 10 years, it will become a great commodity to replace traditional lighting appliances. F White light emitting diode manufacturing technology mainly uses the color s to achieve the effect of forming white light to the human eye. The visible white light form must be mixed with at least two kinds of light, for example, a combination of monochromatic yellow light and Xue light. By adjusting the ratio of the luminous intensity, 'mixing the two color lights can achieve the effect of forming white light; it can also be combined by red light and green light. And blue light, through Adjust the ratio of luminous intensity and mix the three colors to achieve the effect of white light. In the above-mentioned white light emitting diodes (yellow light and blue light), the production technology of blue aluminum crystal (yttrium aluminum garnet) excites the aluminum aluminum garnet phosphor, The two-wavelength mixed light particles are coated with a layer of aluminum aluminum garnet fluorescent powder (YAG) 'Using a blue light emitting diode to generate a yellow light complementary to the blue light, and then

1224872 V. Description of the invention (3) Using the principle of lens, the complementary yellow light and blue light are mixed to obtain the required white light. Please refer to FIG. 1, which is a cross-sectional view showing the structure of the white light emitting diode. The white light emitting diode bulb is a combination of a gallium nitride blue light emitting diode grain 12 and a YAG fluorescent material 14. The light-emitting diode crystal grains 12 have a cathode and an anode on its surface, the light-emitting diode crystal grains 12 are placed in a cavity 17 * on the metal pin 13, and the light-emitting diode crystal grains 12 are formed. 1 2 bis The surface electrodes are connected to the metal pins 3 and 15 respectively, and then the fluorescent material 14 is used to fill the grooves 17 on the metal pins 13 and finally the entire die is filled with the packaging material 16丨 2 and the metal pins 丨 3, 丨 5 are packaged and fixed at the ends. When a current flows from the negative electrode to the positive electrode, the gallium nitride light emitting diode crystal 12 emits blue light with a wavelength close to 460 nra. A part of the blue light passes through the YAG fluorescent material 14 to the outside, while the other blue light remaining in the YAG fluorescent material 14 is absorbed by the YAG fluorescent material 14 and is further converted into a yellow light with a longer wavelength (55 nm). The yellow light (fluorescence) emitted by the YAG fluorescent material 14 and the blue light emitted by the gallium nitride light emitting diode grains 12 are naturally mixed to generate white light. Please refer to FIG. 2 to show the white light emitting two Schematic diagram of the polar body. Although the use of nitrided chain light-emitting diodes and γ A g fluorescent materials can achieve the purpose of generating white light, there are several disadvantages to this approach. The first is that because YAG absorbs blue light and converts it to yellow light, part of the energy is absorbed by YAG but not converted to light, so that the external quantum efficiency of the diode structure of gallium nitride plus YAG is changed from the original About 5% of the polar body is reduced to about 30/0. Even V reduces the luminous efficiency and brightness. And because the conversion efficiency of YAG is about 10%, such a low efficiency is necessary to maintain the ratio of yellow light to blue light.

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Fluorescence = required white light ’The composition of the YAG fluorescent material is bound to increase σ, resulting in a thick yag = material, and a thick layer of YAG fluorescent material will reduce the brightness of the device and make external quantum efficiency worse. And the camping powder itself has a disadvantage of 220fe time), which causes the color temperature of the light to be emitted with the use of: "It is not easy to control the mouth" will cause the product to produce color after a certain number of years of use, so the life of this white light emitting diode Relatively limited, compared to the single-chip (Singie chip) type white light-emitting diode, the other f is a Japanese film (with 11: 1 chlp), and the white light-emitting diode is: The polar body forms the same element, and the three primary colors are mixed: the white light is generated. In this way, the red, green, and blue light-emitting diodes: and semiconductor materials are very different from each other. Therefore, the design of the driving circuit also becomes cumbersome and complicated. Because if there are three chips, it must be targeted for three resistors, voltage, etc., so mass production will be greatly limited. And the three light-emitting layers of red, green, and blue cannot easily match the individual luminous efficiency, so f is not easy to form high. The efficiency of white light-emitting diodes. Because the deceleration rate of the three chips is not used, the color shift will occur after a period of use, which will worsen the light quality of the light, so the single chip method is more suitable. It is feasible to use a faulti chip. A white diode using ultraviolet light emitting diode (uv LED) excitation is also proposed. Due to the ultraviolet (uv) light emitting diode element: the external quantum efficiency of the bean can exceed 20 % Or more, if this is used to excite the three-wavelength fluorescent light and body, a high-efficiency white light-emitting diode can be obtained. 纟 Because the energy of purple light is extremely south, and ultraviolet light is likely to deteriorate the sealing material (plastic) and fluorescein Light powder

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V. Description of the invention (5) Problems such as deterioration have significantly reduced the service life of such components. In US Patent No. 6, 33 7, 536, a white light-emitting diode using ZnSe as a substrate is also disclosed. Please refer to FIG. 3, which shows a structural cross-section of the white light-emitting diode. Illustration. It uses a multilayer structure containing coded ^ and 2111 ^ 0 (1 ^ 86 to emit blue light to excite the light center of a petrified zinc substrate to generate yellow light. After mixing, white light is obtained. Please refer to the figure. The white light is shown in the system Schematic diagram of the light-emitting diode. However, it uses the silicon substrate to absorb light emitted from the light-emitting layer and excites another solid-colored light from the selenide substrate, so it is not easy to combine it into white light with an appropriate color temperature. Diode, and its luminous efficiency is lower than that of ordinary diode products, and the product life also needs to be further improved. In one mouth, it can be described [Summary of the Invention] In view of this, the present invention further provides a white light emitting diode and its body Method, with a buffer layer region (& g7p and InxGa ^ N) with a gradient change, it has two light-emitting parts on a single chip (s chip), and can complete the growth of the crystal at one time, each It emits blue light and yellow light, and can get white light after natural mixing, which can avoid the conventional white light. Each light diode has short life, complex structure, and poor luminous efficiency. 1 And blue light and light are separately emitted. The luminous efficiency is easier to match. The present invention provides a white light emitting diode and a manufacturing method thereof. The shoulder layer consists of two buffer layers (BxGaixP & InxGa ^ N) with gradient changes: white light emitting diodes can be formed on different substrates. Polar body is different from the technology that diode can only be formed on a fixed substrate.

1224872 V. Description of the invention (6) Reducing the mismatch between the epitaxial layers in the diode element (丨 a 11 丨 ⑶ mismatch), so that the lattice between the epitaxial layers is more matched to reduce the Linear defects in polar elements provide white light-emitting diodes with perfect crystallinity. In order to achieve the above-mentioned object, the white light-emitting diode according to the present invention includes at least two layers that have a gradient change, a second light-emitting portion, and a second first conductive electrode to form an electrical contact binding layer, a first The active binding layer of the light emitting part is sequentially formed on the substrate. The buffer layer region is formed on the first buffer layer region. The buffer layer region is formed by one or a part of the first type binding layer on the buffer layer region. Second Conduction The second type tie layer forms electrical contact. When a potential difference is applied between the second electrodes, a current is generated, and the buffer layer region and a first light emitting part emit light of the first wavelength range and light of the two wavelength ranges, and are obtained by natural mixing of the light in this long range. The present invention also includes the following steps for providing a base electrode, a bottom electrode, and a first light emitting portion buffer layer region (BxGa ^ P and InxGai_xN) conductive electrodes. The above substrate and the above. The above-mentioned first light-emitting part first-type beam layer and a first light-emitting part second-type beam 'constitute a light-emitting part. The above-mentioned optical portion is a second-type binding layer, and a buffer layer is formed thereon. The second light-emitting layer and the second-type binding layer sequentially form an electrical electrode and the above-mentioned second light-emitting portion of the conductive electrode, and the first conductivity is passed through the second light-emitting portion, and the first light-emitting portion is divided by the current. The active layer of the second light-emitting part of the stomach emits light of a first wavelength range and second wave-induced white light. Light-emitting diode, its manufacturing method, to: 'It is connected with a first conductive electrode

1224872 V. Description of the invention (7), forming a first light-emitting part of the first type + ^ π, a μ 邛 active layer, and a first light-emitting part of the second type binding layer in order to form a light-emitting exhibition: A light-emitting part; forming at least two layers with gradients of mJ on the substrate (BxGa, XP, and InxGa), above the first light-emitting part is under the buffer =, and sequentially forming a second light-emitting part, the first type binding Layer-type ^ binding light part active layer and a second light-emitting part of the second type binding; on ::: layer area, to form a second light-emitting part, and finally form a second guide = "extremely above the second On the surface of the second-type binding layer portion of the light-emitting portion. Based on another object of the present invention, the substrate according to the present invention can further form at least two buffer layers (dGai χP and inxGa (B × N)) which have gradient changes. The invention is characterized in that the white light emitting diode according to the present invention is a single chip type white light emitting diode, and it also has a first light emitting portion and a second light emitting portion on the single wafer, which can be emitted separately. Blue and yellow light After natural mixing, white light can be obtained. The blue light and yellow light emitted by the white light emitting diode according to the present invention are emitted by the diode itself, without the need to stimulate other media (fluorescent powder or zinc selenide substrate) Another feature of the present invention is that the white light-emitting diode according to the present invention utilizes at least two buffer layer regions (BxGa ^ P and InxGai_x N) which are gradiently changed to be disposed on the diode substrate and The first light-emitting part, the first light-emitting part and the second light-emitting part are arranged at the same time, and the lattice constant of the buffer layer region shows a gradient change. The bottom of the buffer layer region near the substrate has a first crystal. The lattice constant is slightly similar to the lattice constant of the substrate. This lattice constant

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Increase or decrease again to approach the proper number and make the second lattice constant; the second lattice constant lattice constants of the layer ... are slightly similar-the bottom of the crystal region of the type-type binding layer of the light emitting part has a lattice f The lattice constants of the buffer layer near the first light-emitting part are slightly different: the number of the surface of the buffer layer area of the second type of binding layer of a light-emitting part is increased or increased, and the number of The second light-emitting part has a first lattice constant of two and the fourth lattice constant i 朿, the lattice constant of the monolayer are slightly similar. In order to make the objectives and features of the present invention more obvious and easy to understand, the following preferred embodiments are described below, and in accordance with the drawings of the corpse juice, the detailed description is as follows: [Embodiment] The white light-emitting diode 2 of the present invention The polar body mainly uses a single light-emitting diode to emit blue light and yellow light, thereby synthesizing white light. Basically, if white A is to be synthesized with two different main peaks, blue light with a wavelength of about 43 nm and yellow light with a wavelength of about 56 nm are generally used. In the following, please refer to the cross-sectional view of the structure of the white light emitting diode of FIG. 5 of Maizhao to describe the present invention in detail. A preferred embodiment of the white light emitting diode structure according to the present invention, as shown in FIG. 5, may include at least: a substrate, a first light emitting portion, and a first type binding layer 122 formed on the substrate. Above 100, a first light-emitting part active layer 124 and a first light-emitting part second-type binding layer 26 are sequentially formed on the first light-emitting part first-type binding layer 22, and the first A light emitting part of the first type binding layer 1 2 2, a first light emitting part active layer 丨 2 4 and a first light emitting part

1224872 V. Description of the invention (9) The first type light-emitting portion 120 is constituted by the sub-type binding layer 126. The sound 126 is gradually overshooting, and \ zone = forms a second-type restraint formed in the first light-emitting portion. A μ layer region 13 can be composed of one or more buffer layers, a light-emitting part of the first type binding layer 142, a part of the active layer 144, and a flute-Hachijoru eighth. Brother Yi Mao Jiu ^ ^ Brother Yi Mao The first 15-blade second-type binding layer 1 46 is sequentially formed on the buffer layer region 130, and the second light-emitting portion is a first-type binding layer 142, the second light-emitting portion is an active layer 144, and the second light-emitting portion is a second-type binding. The layer 146 constitutes the second light emitting portion 14o. When the current passes through the first light-emitting portion 120, the first-light-emitting-portion active layer 124 emits light of the first wavelength. When the current passes through the second light-emitting portion 140, the first-light-emitting portion active layer 144 emits light of the second wavelength. When the light of the first wavelength is combined with the second, white light is obtained. [Sunburn] The above-mentioned structure may further include changing the lattice constant of the buffer layer region 13 to a grading change. In a preferred embodiment, the lattice constant at the bottom of the buffer region 130 and the first light emission may be changed. The first lattice constant (ci) of the second type binding layer I? 9 is similar, and the meaning constant of the buffer layer region 130 is gradually changed to make the lattice constant of the surface of the buffer layer region 130 close. The second type of binding layer 142 has a second number (C2). In short, the lattice constant of the buffer layer region 130 is gradually changed from the constant (C1) to the second lattice constant (C2). Among them, the gradient change of the lattice constant of the product 1 30 can be achieved by, for example, adjusting the composition of the buffer layer region in proportion. The white light emitting diode system according to the present invention has a second conductive electrode 300 and the second light emitting part of the white light emitting monopolar structure described above.

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The binding layer 1 4 6 is used for electrical contact and a substrate with a white light emitting diode structure. 〇〇 ::: 性 ： 极 2⑽ and the above is a white 'Zhengzhao photo showing a preferred embodiment of FIG. 6, in the example In some preferred embodiments, the white light emission described in the present invention may also be a white light-emitting diode formed on a conductive electrode region of the first light-emitting diode, so that the first conductive electrode is a white light-emitting diode. The first contact with the substrate for electrical contact may be a metal contact, a metal layer, a metal pin, or any of the conductive platforms (contacts) that are the contact ends of a polar body electrode, but this W-shaped diagram uses only electrodes The contact end indicates this. …, And in conjunction with reference to FIG. 5 below, examples of layer material combinations applicable to the present invention are illustrated. Example: As shown in FIG. 2, the substrate 100 may be gallium arsenide (GaAs), phosphide (GaP), silicon (Si), or silicon carbide (3c_sic). The layer 122 may be an aluminum gallium indium phosphide (A1GaInp) -based compound, and the above-mentioned first light-emitting part active layer 丨 24 may be an aluminum gallium indium phosphide (A 丨 Ga 丨 np) -based compound. The layer 26 may be an aluminum gallium indium phosphide (A1 GalnP) -based compound, and a surface thereof has a first lattice constant C1. The above buffer layer region 130 may be a first buffer layer composed of BxGa (ix) P and a second buffer layer composed of InyGa (1_y) N, where osx ^ i, 0-y-1 'and The second buffer layer is formed on the first buffer layer and is adjacent to the bottom of the first light-emitting portion of the first type binding layer. The above X can be from 0 to 1, so that the lattice constant at the bottom of the buffer layer region 130 is close to the first lattice constant c 1 and the first

1224872 V. Description of the invention (11) The lattice constants of the buffer layer and the adjacent second buffer layer are similar. ra 1 ″ 1 ϋFirst entry & * Some first type binding layers may be gallium indium nitride (A1GaInN) 糸 compounds, the surface of which has a first crystalline 袼 constant. Above, '[, y may be from 0 to 1. In order to make the lattice constant of the surface of the buffer layer region and the second lattice constant C2 close and the number of the lattice # of the second buffer layer and the bordering first buffer layer close. The above-mentioned second light emitting part is active The layer may be an aluminum gallium nitride (AlGalnN) -based compound, and the second light-emitting portion of the second type binding layer may be an indium gallium nitride (A 1 G a I η N) -based compound. When a current passes through the first light The part of the first light-emitting part active layer composed of aluminum gallium indium phosphide (A 1 Ga I η) series compound at 2 o’clock will emit a light with a yellow wavelength (wavelength of about 5 60 nm), and when When a current passes through the second light-emitting portion 140, the first light-emitting portion active layer 14 composed of an aluminum gallium indium (A1GaInN) -based compound emits a light of blue wavelength (wavelength of about 4 30 nm). When yellow When the light of the wavelength and the light of the blue wavelength are naturally mixed, white light can be obtained. The white light emitting diode of the present invention, The above white light emitting diode structure includes a second buffer layer region between the first light emitting portion and the second light emitting portion, and further includes a first buffer layer region between the substrate and the first light emitting portion. Please refer to Fig. 8. The white light emitting diode structure as described above may include at least: a substrate 100, a first buffer layer region 110, and a first light emitting portion of the first type binding layer 122 formed on the first buffer layer. Above the region 110, a first light-emitting portion active layer 124 and a first light-emitting portion second-type binding layer 126 are sequentially formed on the first light-emitting portion first-type binding layer 122, and a second buffer layer region 1 50 formed in the above-mentioned first light-emitting part of the second type bond

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Above the layer 126, the second buffer layer region 150 may be composed of a single layer, a pair of layers, and a pair of layers. A first-type binding layer 142, a first-type binding layer 142, a second-light-emitting portion active layer 144, and a second light-emitting portion second-type binding layer 146 are sequentially formed on the second buffer layer region 150. That is, the structure described above can change the lattice constant of the first buffer layer region 110. In a preferred embodiment, the lattice constant of the first layer region 130 can be changed from that of the substrate 100. A crystal is often gradually changed to the second lattice constant (C2) of the first light-emitting portion of the first type binding layer 22; the lattice constant of the second buffer layer region 15 can be changed from ^ The third lattice constant (c gradually changes to the second light-emitting part of the first type binding layer in the second light-emitting portion of the second-type binding layer 1 2 6) (42) The lattice constant (C4) of the second light-emitting layer The material combination of the layers of the invention and suitable inventions. 2. This example 2: Referring to FIG. 7, the substrate 100 may be silicon (Si) or carbide (Uc — sic), which has a first lattice constant C1. A first buffer layer region 110 is formed on the above substrate. The first buffer layer region 110 may be a first buffer layer composed of BnGa (in) p and a second buffer layer composed of InmGa ^ J, where Sn $ l, 0Sm $ l. The above-mentioned η can be from 0 to 1, so that the lattice constant at the bottom of the first buffer layer region 110 is close to the first lattice constant C1 and the lattice constants of the first buffer layer and the second buffer layer adjacent thereto are close. A first light-emitting portion of the first type binding layer 122 is formed on the first buffer layer region 110, and the mask has a second lattice constant C2. The above m can be from 0 to 1, so that the lattice constant of the surface of the first buffer layer region 110 is close to the second lattice constant C2 and

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1224872 V. Description of the invention (13) --- The lattice constants of the second buffer layer and the first buffer layer connected are similar. The first light emitting portion of the first type tie layer 122 may be an aluminum gallium indium nitride (A1GaInN) -based compound. The first buffer layer region is used as an etching stop layer to selectively etch the first light-emitting portion of the first type binding layer 丨 2 2 to expose a portion of the first buffer layer region 110 and form a first conductive electrode 2 〇〇 on its surface. A first light emitting part active layer 24 is formed on the first light emitting part first type binding layer 122, and the first light emitting part active layer 24 may be an aluminum nitride (A1 Gal nN) -based compound. A first light emitting part second type binding layer 126 is formed on the first light emitting part active layer 丨 24. The first light emitting part second type binding layer 126 may be an aluminum gallium indium nitride (A1GaInN) series compound, and the straight surface has -The third lattice constant C3. Next, a second buffer layer is formed on the second-type binding layer 126 of the -light emitting portion. The above-mentioned second buffer layer system includes a first buffer layer composed of IriyG% -y] N and a second buffer layer composed of which, 0gyg, and the third buffer layer is formed in the second Under the buffer layer, the first y and the second type 126 are adjacent to each other. The above-mentioned y can be from 0 to 1, so that the lattice constant of the second buffer layer region and the second lattice constant C3 are collapsed. Noise-> μ _ @ t Β s & Recently, the lattice constants of the buffer layer and the adjacent first buffer layer are close. A second light-emitting portion of the first-type binding layer 142 is formed on the punching layer 150, and the aforementioned -Yanqiu Qiba Babebe + l Leyi, & & & Nine-Party Type-I binding layer U2 may be filled The indium gallium indium (A1GaInP) -based compound has a surface constant of C4 on the surface. The above-mentioned X can be from 0 to 1, so that the first day of the α-Handi-buffer layer region has a lattice constant close to the fourth lattice constant C4 and the k-Han of the _lbU surface is washed away. Bordering

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The lattice of the first buffer layer is like a crystal. The sound of the film ^ and the sound 144 and Chu-π sequentially form the second light-emitting portion or the second π Φ «first first-type second type binding layer 146 on the second light-emitting portion I is U 1 Ρ / /, the second light-emitting Part of the active layer 144 may be an aluminum gallium indium (A 1 G a I η Ν) compound, while Chu-Zheng, A !, 〇_. ^ And the light emitting part of the second type binding layer 1 4 6 may To marry the rattles of the Shao Mingming] (eight) 0 only | ^, gold / 1 person., UibalnN) 糸 compounds. A second conductive electrode 3 0 0 is formed in the above-Su Zhongli κ 八 @ ^ & 乐 一 ^ first part of the second type binding layer 丨 4 6 on the surface of 0 when the current passes through the first light emitting part 120, by nitrogen The active layer of the first light-emitting part composed of aluminum gallium indium A1 GajnD-based compound 24 emits light of blue wavelength (wavelength about 43nm), and when the current passes through the second light-emitting part 1 40, it is phosphorylated The second light-emitting part of the active layer 144 composed of aluminum gallium indium (A 丨 Ga 丨 series compound) emits a yellow light f (wavelength about 560 nm). When the light of yellow wavelength and the light of blue wavelength are naturally mixed, White light is obtained. The following is a description of a preferred embodiment of forming BnGa + uP as a buffer layer. First, the substrate can be cleaned with a suitable chemical solution first, and then the substrate can be heated to a suitable temperature in a% atmosphere, such as 900 ~ 11 80 ° C, preferably 10 3 0 C, using halide vapor phase epitaxy, H2 as carrier gas, boron gas (BC13), trimethylgallium (Trimethyl gal 1 ium; TMG) and phosphorus chloride (PC13) or tritium; | l side (BC13) Trimethyl gallium (trimethyl gallium; TMG). And phosphine (PH3) as a precursor for high temperature boron phosphide epitaxial layer at a temperature of about 100〇 ° C and down, the reaction for about 6 minutes square, a thickness of about

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5. Description of the invention (15) is 4 5 6 0 n m. By changing the content ratio of each precursor, the multi-layer stacking layer BnGa ^ wP with different composition ratios can be used to make the lattice constants change gradients. The BnGa (1_n) P buffer layer formed by this method is a high-temperature) p < moderate layer. However, the present invention may also provide a low-temperature boron phosphide (BP) buffer layer between the high-temperature KGahJ buffer layer and the bottom surface, and the low-temperature phosphate buffer layer is formed at a temperature of about 300 ° C. 1. The buffer layer InyGa and yN can be made by MOVCVD, for example, using trimethy indium (TMIn), trimethyl gal 1 ium (TMG), and NH3 as precursors. Change the content ratio of each precursor to form multiple stacked layers with different composition ratios

InyGabuyN. Furthermore, the buffer layer InxGahP can be made by MOVCVD, for example, it is formed by using trimethy indium (TMIn), trimethyl gal 1 ium (TMG), and phosphine (PH3) as precursors. 'By changing the content ratio of each precursor, a multilayer stacking layer InxGai_xP with different composition ratios is formed. A preferred embodiment of forming the first type of tie layer is described below. The precursors for the formation of the structured I LuGa indium (A 1 G a I η P) series compounds may include trimethyl | Lu ((CH3) 3A1), trifluorenyl gallium ((CH3) 3Ga), and trimethylindium (( CH3) 3In) and hydrogen-filled hydrogen (PHS) are used as unreacted materials, and precursors for forming aluminum gallium indium nitride (A1GaInN) -based compounds may include trimethylaluminum ((CH3) 3 A 1), trimethylgallium ((CH3) 3Ga), trimethylindium ((CH3) 3In), and hydrogen nitride (NH3) were used as unreacted materials, and an aluminum gallium indium phosphide-based compound was formed by a reduced pressure MOCVD method. Supply & and N2 gas during reaction, temperature is about 50 0 ~ 80 0, for example

1224872 V. Description of the invention (16) a ---- It is possible to use diethyl zinc ((Hs 夂 Z η)) as the doping source of zinc, or use hesparite (IS e) as the dopant. Reactive materials. In addition, the MOVCVD method can also be used for the active layer. For example, trimethyl aluminum (TMA1), trimethy indium (TMIn), trimethyl gallium (TMG), and nitrogen can be used. Hydrogen hydride (N Hs) (or hydrogen hydride (p%)) is formed as a precursor. During the reaction, I and I gas should be used, and the temperature is, for example, about 500 ~ 80 0 ° C. The better one can borrow The content ratio of each precursor is changed to form multilayer stacking layers with different composition ratios. The second type of binding layer can form, for example, an aluminum gallium indium phosphide (A i Ga〗 np) -based compound, and the precursor may include trimethyl aluminum. ((Ch3) 3A1), trimethylgallium ((Ch3) Ja), trimethylindium ((CH3) 3In), and phosphine (pi) are used as unreacted materials or form indium ( A1G a I η N) -based compounds, the precursors may include trimethylammonium ((CH3) 3A1), trimethylgallium ((CH3) 3Ga), and trifluorene-based indium ((C Hs 夂 I η)) and nitride Hydrogen (n Hs) As an unreacted material, a reduced pressure M0 CVD method is used to form a gallium indium-based gallium indium-based compound. During the reaction, the temperature of the supply gas & gas is, for example, about 500 to 800 ° C. For example, Doping with magnesium (Mg) into a P-type 'electrical-type evil' or, for example, replacing with sulfur (§) into an η-type conductive type. According to the white pre-emitting diode and the manufacturing method thereof, the present invention It has the following advantages: 1. The white light-emitting diode system of the present invention can emit light of two wavelengths after passing through the current, and then mixed to obtain white light without the need to combine fluorescent materials or other excitation media, so it will not Because of fluorescent materials or other excitation

1224872 V. Description of the invention (17) The life of a negative influences the performance of a polar body. 〇α 2. According to the present invention, the two light-emitting parts of the white light-emitting diode are formed on a single diode, which is a single chip type white light-emitting diode, and the driving circuit is easy to design without using a Combining multiple light-emitting diodes can greatly reduce production costs and reduce packaging and circuit control difficulties. 3: Since the wavelengths used to mix into white are all emitted by the white light-emitting diode itself, and the color temperature of the diode is not easy to change with the use time, and the light-emitting efficiency is easy to match, the white light-emitting diode of the present invention The light wavelength of the polar body is easy to control. Unlike the diode obtained by using an excitation medium, the light wavelength of the bean is easy to change with increasing (decreasing) temperature or operating voltage.七 七 4_ = Invented white light emitting diode, which uses different substrates (Guide: 2 No, 胄 白 可) to form white light emitting diodes, which is different from the conventional white = light diode can only be fixed on the substrate Formation technology, and the buffer can be used to reduce the lattice mismatch between the epitaxial layers in a polar element. 二: The lattices between the telemorphic layers are more matched to reduce two = several pieces. Medium line defect, providing white light emitting diodes with perfect crystallinity. Although the present invention discloses the scope of the present invention in a preferred embodiment, anyone familiar with this technology is broad and not intended to limit the scope of protection. The attached patent application is subject to the definition of the present invention.

1224872 Brief Description of Drawings Figures 1 and 2 are cross-sectional views and light-emitting diagrams showing a conventional white light-emitting diode. 3 and 4 are cross-sectional views and light emission diagrams of another conventional white light-emitting diode structure. Fig. 5 is a sectional view showing the structure of a preferred embodiment of a white light emitting diode structure according to the present invention. Fig. 6 is a cross-sectional view showing a white light emitting diode according to a preferred embodiment of the present invention. Fig. 7 is a cross-sectional view showing a white light emitting diode according to another preferred embodiment of the present invention. Fig. 8 is a sectional view showing the structure of another preferred embodiment of the white light emitting diode structure according to the present invention. [Symbol description] 1 2 ~ crystal grains, 1 3, 1 5 ~ metal pins; 14 ~ fluorescent materials; 16 ~ packaging materials; 1 7 ~ grooves; 2 1 ~ diodes; 22 ~ stupid luminescent materials , 23, 25 ~ metal pins; 2 4 ~ selenium zinc substrate; 2 6 ~ packaging materials;

0769-9102TWF (nl); VTERA-91-010-TW; Phoelip.ptd Page 22 1224872 Schematic description of 100 ~ substrate; 1 1 0 ~ first buffer layer area; 120 ~ first light emitting part; 122 ~ first A light emitting part of the first type binding layer; 124 to the first light emitting part active layer; 126 to the first light emitting part of the second type binding layer; 130 to the buffer layer area; 1 40 to the second light emitting part; 142 to the first Two light-emitting portions of the first type binding layer; 144 to the second light-emitting portion of the active layer; 146 to the second light-emitting portion of the second type binding layer; 150 to the second buffer layer region; 200 to the first conductive electrode; 3 0 0 ~ second conductive electrode; C; 1 ~ first lattice constant; C2 ~ second lattice constant; C3 ~ third lattice constant; C4 ~ fourth lattice constant; E ~ of the diode Electrically-excited light; B ~ blue wavelength light; F ~ fluorescent material is excited; and Y ~ yellow wavelength light.

0769-9102TWF (nl); VTERA-91-010-TW; Phoelip.ptd page 23

Claims (1)

1224872 Case No. 92105775 6. Scope of patent application 1. A white light-emitting diode, which includes at least a first conductive electrode; a substrate and the first conductive electrode shaped base including GaAs, GaP is in contact with and 5H-based (3C-sic); Si (Si) or stone-reversed silicon corrects this layer and the first layer, and the marriage (A 1 G layer is formed above, its layer and a The first light-emitting portion of the first light-emitting portion of the first layer of the first wavelength range and the second light-emitting portion of the first light-emitting portion of the first layer of the punching layer region of the electrical electrode in the punching layer sequentially form the first light-emitting portion. The first emission ^ alnP) series compound; nine ^ first buffer layer region is formed in the first light emission, the first buffer layer region is 0 $ 1, 0 Sy $ 1 in BxGa (i-χ) ρ &1; The two light emitting portions of the first type binding layer and the first light emitting portion of the first type binding layer are sequentially shaped and constitute a second light emitting portion, the second indium (AlGalnN) -based compound; and a second conductive electrode and the above. When the second light-emitting portion is in contact, and a potential difference is applied between the second conductive electrodes Generates a current, this current through the first, and the first light emitting portion, so that the light emitting wavelength range of the first or of the first light emitting part of a living, and by the light of the first wavelength range attainable mixed white light. A light-emitting part is active in the above-mentioned substrate, including the aluminum gallium phosphide part of the second type binding ny Ga (1-y) N. The two light-emitting part is active in the above-mentioned light-emitting part: ΐ sub-type binding And the first ~ ^ two light emitting parts < part of the active equine layer emits | light and the second layer 0769-9102TWfl (4.2); VTERA-91-010-TW; ICE.ptc page 24 1224872 ----- installation number 921 (1577 ^ ___ year_revision__ / ,, apply for δFen patent scope 2 · white light-emitting diode as described in the first scope of the patent application, wherein the above substrate There is also a buffer region between the first type of the first light-emitting portion and the first type binding layer. 3 · The white light-emitting diode according to item 2 of the patent application scope, wherein the first buffer layer and the second buffer layer The lattice constants of the upper and lower junctions of the layer are respectively arranged on the surface of the first light-emitting portion second type tie layer, the bottom of the second light-emitting portion first type tie layer, the base surface, and the first light-emitting portion first type tie layer. Lattice constant at the bottom. 4 · The white light-emitting diode as described in item 2 of the patent application range, wherein the second buffer layer region includes a Bx G au_x) P and I ny G a (1_y) Ν Composition, where O ^ xSl, 〇 $ y $ l. 5 · A method for manufacturing a white light emitting diode, including at least the following steps: providing a substrate which is in contact with a first conductive electrode, and the substrate includes gallium arsenide (GaAs), structured gallium (GaP), Silicon (Si) or silicon carbide (30 sic); sequentially forming a first light emitting part, a first type binding layer, a first light emitting part, an active layer, and a first light emitting portion, a second type binding layer on the substrate; A first light-emitting portion is formed, and the first light-emitting portion includes an AlGal nP-based compound; a buffer layer region is formed on the second type binding layer of the first light-emitting portion, and the buffer layer region is made of BxGa (1_xJ and InyGa (w) N, in which 0 ^ X ^ 1 '0 ^ y ^ 1; sequentially forming a second light emitting part of the first type binding layer, a second light emitting 0769-9102TWfl (4.2); VTERA-91-010-TW; ICE.ptc page 25 Sixth, the scope of application for a patent ^^ 2. _ 邛 刀 'tongue layer and a second light-emitting part on a region to constitute a second light-emitting part, 誃: type binding layer on the above buffer layer gallium indium (UlGalnN) series compounds · And "The two light emitting parts include aluminum nitride to form a second conductive electrode on the surface of the upper tie layer part. 2. The second light emitting part and the second type beam method 6. ΐ! There is more between the above substrate and the first light emitting part and the first type binding layer in the production of the white light emitting diode described in item 5 of the patent scope. The second buffer layer region. 7, · = The lattice of the white light-emitting diode described in item 6 of Shenqing Patent Qianwei. ^ ^ The tenth buffer layer and the upper and lower contact surfaces of the second buffer layer, and the second light-emitting portion. The second-type binding layer surface of the light-emitting part and the bottom of the first-type binding layer of the first light-emitting portion and the above-mentioned substrate surface 8 as in the scope of the patent application; f Lattice constant at the bottom of the binding layer. Method, wherein the second buffer I. The white light emitting diode described in the item is composed of N, where 0: the system includes a BxGa (1_x) P and InyGa (1_y) ~, 0 y $ 1. Page 26