TWI223925B - A speeded up multistage comparator with power reduction and reliable output - Google Patents

A speeded up multistage comparator with power reduction and reliable output Download PDF

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TWI223925B
TWI223925B TW92132109A TW92132109A TWI223925B TW I223925 B TWI223925 B TW I223925B TW 92132109 A TW92132109 A TW 92132109A TW 92132109 A TW92132109 A TW 92132109A TW I223925 B TWI223925 B TW I223925B
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comparator
comparators
control signal
patent application
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TW92132109A
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TW200518473A (en
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Jhy-Ren Yang
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Macronix Int Co Ltd
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Abstract

A configuration of sub-comparators for use within an analog to digital conversion circuit is disclosed. A number of the sub-comparators are adapted to receive equalization and power down control signals. In one embodiment, several of the sub-comparators are cascaded together in the analog to digital conversion circuit. An equalization signal and a power down control signal are applied to at least some of the sub-comparators enabling the sub-comparators to attenuate or eliminate offset voltage and environmental noise associated with the signal to be sampled. Furthermore, in accordance with another aspect, the analog to digital conversion circuit includes a latch type differential sub-comparator, which can attenuate or eliminate output levels of the sub-comparators from residing in an unstable input region of the digital converter.

Description

1223925 五、發明說明(1) [發明所屬之技術領域] 本發明是有關於半導體製造領域,更確切地說,是有 關於具有同時提供可靠輸出、消除偏移電壓、低功率消耗 特徵的比較器。 [先前技術] 傳統信號處理工作通常採用數位電路完成。然而,很 多應用軟體需要生成並處理類比信號。當需要處理混合信 號時,常用做法是將類比信號轉換成對應的數位信號,然 後由微處理器完成處理過程等等。在實際應用過程中,對 於很多微處理器晶片來說,在晶片上安裝類比-數位(A/D )轉換器從商業角度來說是可行的。處理信號時,特定類 比信號可能需要採用類型不同的轉換電路和技術。例如: 多種不同電路可生成相對於地面的單個導體上的類比信 號,這種信號稱作’’單端接地(s i g n a 1 - e n d e d ) ’’信號,其含 義是該信號的大小是相對於一個已知參照電壓(如接地)測 量而得。 其他電路可在一對導體上生成微分類比信號。此時其 中一個導體上的類比信號是相對於另一導體測量而得,而 非相對於接地電路。變壓器、微分輸出放大器及很多其他 電路都能生成該類信號,在該種情況下,除希望使用單端 接地類比-數位裝置外,同樣也希望使用微分裝置。 一般而言,類比/數位裝置的運行通常是根據比較器 的使用。比較器是一種電路,該電路用於比較兩輸入信 號,並生成一輸出信號,該輸出信號表明兩個輸入信號的1223925 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to the field of semiconductor manufacturing, more specifically, to a comparator having the characteristics of simultaneously providing reliable output, eliminating offset voltage, and low power consumption. . [Prior art] Traditional signal processing is usually done with digital circuits. However, many applications need to generate and process analog signals. When processing mixed signals, it is common practice to convert analog signals into corresponding digital signals, and then the microprocessor completes the processing and so on. In practical applications, for many microprocessor chips, it is commercially feasible to install an analog-to-digital (A / D) converter on the chip. When processing signals, specific analog signals may require different types of conversion circuits and techniques. For example: A variety of different circuits can generate analog signals on a single conductor relative to the ground. Such signals are called `` signa 1-ended '' signals, which means that the size of the signal is relative to It is obtained by measuring the reference voltage (such as ground). Other circuits can generate differential signal on a pair of conductors. At this time, the analog signal on one conductor is measured relative to the other conductor, not the ground circuit. Transformers, differential output amplifiers, and many other circuits can generate this type of signal. In this case, in addition to using a single-ended grounded analog-to-digital device, a differential device is also desired. In general, the operation of analog / digital devices is usually based on the use of a comparator. A comparator is a circuit that compares two input signals and generates an output signal. The output signal indicates the

9818twf.ptd 第6頁 1223925 五、發明說明(2) 比較結果’如最大值。比較器通常用於類比/數位轉換, 即它們將類比輸入轉換為數位輸入。因以前技術所包含的 比較器是類比/數位轉換器的一個元件,故本發明說明書 描述比較器的典型功能時,便將比較器作為類比數位轉換 器的一個基本元件來說明。 在高精度應用條件下,全微分結構經常用於比較器 級’以便抵消諸如數位時脈串音(c r 〇 s s t a 1 k )干擾、時脈 饋通(clock feed-through)、電源、/ 接地彈]^( ground bounce)和1/f雜訊之類環境常見模式雜訊。第“圖表示傳 統比較器電路100,該電路包括四個全微分再生子比較器 (fully differential regenerative sub-comparator) 1 05、l〇6、107 和 108,從而可充分發揮 該類全微分電路優勢。除了這些子比較器外,緊接著還有 兩組單端接地反相(inverting)子比較器162、164、166和 1 6 8,它們可進一步增強比較器電路1 〇 〇的信號增益。在所 有這些子比較器級之後,還有兩組通用數位反相器1 7 4、 175、176和173及鎖存器180,它們用於提供單數位輸出。 這類複級比較器同時具有全微分和單端接地(F S )結構特 徵。 、 子比較器105、106、107和108在分離等級中串聯使 用。子比較器105接收分別來自通過電路11〇和hi的輸入 電壓VinX-和VinX+並提供輸出信號121和122。串聯在一起 的子比較器105、106、107和108每一級的輸出信號就是輸 入到該串聯電路下一子比較器的子比較器輸入信號。子比9818twf.ptd Page 6 1223925 V. Description of the invention (2) The comparison result ’is the maximum value. Comparators are often used for analog / digital conversion, that is, they convert analog inputs to digital inputs. Because the comparator included in the prior art is an element of an analog / digital converter, when the typical function of the comparator is described in the description of the present invention, the comparator will be described as a basic element of the analog digital converter. Under high-precision application conditions, the fully differential structure is often used at the comparator stage to cancel out such issues as digital clock crosstalk (cr oststa 1 k) interference, clock feed-through, power, and / or ground ] ^ (ground bounce) and 1 / f noise environment common mode noise. The figure "shows a conventional comparator circuit 100, which includes four fully differential regenerative sub-comparators 1 05, 106, 107, and 108, so that the advantages of this type of full differential circuit can be fully utilized. In addition to these sub-comparators, there are two sets of single-ended grounded inverting sub-comparators 162, 164, 166, and 168, which can further enhance the signal gain of the comparator circuit 100. In After all these sub-comparator stages, there are two sets of general-purpose digital inverters 174, 175, 176, and 173, and latch 180, which are used to provide a single digital output. This type of complex comparator also has full differential And single-ended ground (FS) structural characteristics. The sub-comparators 105, 106, 107, and 108 are used in series in the separation level. The sub-comparator 105 receives the input voltages VinX- and VinX + from the circuits 11 and hi, respectively, and provides Output signals 121 and 122. The output signal of each stage of the sub-comparators 105, 106, 107, and 108 connected in series is the input signal of the sub-comparator input to the next sub-comparator of the series circuit.

1223925 五、發明說明(3) 較器1 0 6接收子比較器1 〇 5的輸出信號1 2 1和1 2 2並輸出兩個 信號1 2 3和1 2 4,子比較器1 〇 7接收子比較器1 〇 6的輸出信號 123和124並輸出兩個信號125和126,子比較器1〇8接收子 比較器107的輸出信號125和126並輸出兩個輸出信號〇υτ + 和OUT- 〇 來自串聯電路中最後一個子比較器1 〇 8的輸出信號 0 U T +和0 U T -分別提供到單端接地反相子比較器1 6 2和1 6 6, 反相後的信號提供到可進一步增大信號增益的單端接地反 相子比較器1 6 4和1 6 8。來自反相子比較器1 6 4和1 6 8的信號 提供到通用數位反相器174、176、175和173。來自數位反 相器175的信號將設置(set)或重設(reset)鎖存器180狀 態,此時可確定通常由晶片外部源輸入的微分負電壓輸入 4吕號(類比輸入信號)V i η -和通常由晶片外部輸入的微分 正電壓輸入信號(類比參照信號)V i η+之間的比較結果。 信號的這種比較過程通常分為兩個單獨步驟進行:a )取 樣階段(sampling phase),b)位元週期階段(bit cycling phase) 〇 請繼續參閱第1 A圖,電路1丨〇和丨丨i用於向比較器電路 1 0 0提供分別作為採樣信號和參照信號的輸入信號v i ηΧ一和 V 1 ηΧ+。電>路/ 1 〇用於採樣ν 土 η一和晶片内通常生成的微分負 電,參照偵唬(類比電壓參照)vda —,且在不同時間間隔 對信號V in-和/da—進行採樣。電路丨丨1的運行模式與電路 1 1 Ο,相同’只疋電路丨丨i採樣的是v丨n +和通常在晶片内產生 的微分正電壓參照信號(類比電壓參照)Vda+。採樣信號1223925 V. Description of the invention (3) Comparator 1 0 6 receives the output signals 1 2 1 and 1 2 2 of sub-comparator 1 and outputs two signals 1 2 3 and 1 2 4; sub-comparator 1 〇7 receives The output signals 123 and 124 of the sub-comparator 1 〇6 and output two signals 125 and 126, and the sub-comparator 108 receives the output signals 125 and 126 of the sub-comparator 107 and outputs two output signals 〇υτ + and OUT- 〇 Output signals 0 UT + and 0 UT-from the last sub-comparator 1 in the series circuit are provided to the single-ended grounded inverter sub-comparators 1 6 2 and 1 6 respectively. The inverted signal is provided to the Single-ended grounded inverter comparators 16 4 and 16 8 which further increase the signal gain. The signals from the inverting sub-comparators 16 4 and 16 8 are supplied to general-purpose digital inverters 174, 176, 175, and 173. The signal from the digital inverter 175 will set or reset the state of the latch 180. At this time, it can be determined that the differential negative voltage input usually from the external source of the chip is 4 Lu (analog input signal) V i Comparison result between η-and a differential positive voltage input signal (analog reference signal) V i η + which is usually input from the outside of the chip. This comparison process of signals is usually divided into two separate steps: a) sampling phase, b) bit cycling phase 〇 Please continue to refer to Figure 1 A, circuit 1 丨 〇 and 丨丨 i is used to provide the comparator circuit 100 with input signals vi η ×-and V 1 η × + as the sampling signal and the reference signal, respectively. Electricity> Road / 1 〇 is used to sample ν soil η and the differential negative electricity usually generated in the chip, refer to the detection (analog voltage reference) vda —, and sample the signals V in- and / da— at different time intervals. . The operation mode of the circuit 丨 丨 1 is the same as that of the circuit 1 1 〇 Only the circuit 丨 丨 samples v 丨 n + and the differential positive voltage reference signal (analog voltage reference) Vda + that is usually generated in the chip. Sampled signal

1223925 五、發明說明(4) (如:Vi η-)和參照信號(如:Vda-)的傳送序列符合第 1B圖波形PVin+和Pda +所示情況。當輸入控制信號Pvin+處 於高位狀態且Pda+處於低位狀態時,類比信號Vin_ ( Vin + )提供到比較器電路1 〇 〇。當開關R6閉合後經過一段時間 △ T1 ’Pvin+變為低位狀態時以及當pvin+設置(sef)為低 位狀悲後經過一段時間△ T 3,P d a +變為高位狀態時,此時 類比電壓參照V d a - ( V d a +)就應用於比較器電路1 〇 〇。 在下文述及的類比數位轉換過程的取樣階段,電路 110提供Vi_n_作為Vi nX-信號。電路no接受來自信號源 /圖中未示出)的輸入信號Vin-。當pvin+處於"高位,,狀 癌時’應用到電路1 1 〇通過電路丨丨5的反相控制信號p v丨n 一 將通過電路1 1 5上的PMOS電晶體設置為"接通狀態(on),,, 應用到通過電路115的信號pvin+將通過電路115上的NM〇s 電晶體設置為”接通狀態"。因此,當Pvin+處於”高位"狀 態且fda+處於”低位"狀態時,兩個電晶體pM〇s和關〇3均 處於’’接通狀態’’,且兩電晶體均滿足等式v丨η χ — = V i η -。 值得注意的是當信號Pda +處於"低位"狀態,pda + 和Pda-應用於通過電路116時,通過電路116的兩電晶體 PMOS和NMOS均處於”斷開狀態(off )” ,這樣就沒有信號 Vda-發送到電路110的輸出端。尤其是,在該段時間,電 路110通過電路116所用控制信號Pda-將pmos電晶體設置為 ’斷開狀態"’通過電路1 1 6的N Μ 0 S電晶體所用信號p d a +將 通過電路1 1 6的該電晶體設置為”斷開狀態"。因此,在取 樣階段’為達到取樣目的,V i η -為應用到比較器電路1 〇 01223925 V. Explanation of the invention (4) (such as: Vi η-) and the transmission sequence of the reference signal (such as: Vda-) meet the conditions shown in the waveforms PVin + and Pda + in Figure 1B. When the input control signal Pvin + is in a high state and Pda + is in a low state, the analog signal Vin_ (Vin +) is supplied to the comparator circuit 100. When switch R6 is closed for a period of time △ T1 'Pvin + becomes low state and when pvin + setting (sef) is low after a period of time △ T 3, P da + becomes high state, then the analog voltage reference V da-(V da +) is applied to the comparator circuit 100. During the sampling phase of the analog-to-digital conversion process described below, the circuit 110 provides Vi_n_ as a Vi nX- signal. The circuit no accepts an input signal Vin- from a signal source (not shown). When pvin + is in the "high position, and it is cancerous", it is applied to the circuit 1 1 〇 through the inverting control signal pv 丨 5 of the circuit 丨 5 will set the PMOS transistor on the circuit 1 1 5 to the "on" state (On) ,, The signal pvin + applied to the pass circuit 115 sets the NMOS transistor on the pass circuit 115 to the "on state". Therefore, when Pvin + is in the "high" state and fda + is in the "low" state ; State, both transistors pM0s and OFF03 are in the "on state", and both transistors satisfy the equation v 丨 η χ — = V i η-. It is worth noting that when the signal Pda + is in the "low" state. When pda + and Pda- are applied to pass through circuit 116, both transistors PMOS and NMOS pass through circuit 116 are in the "off state" (off), so no signal Vda- is sent. To the output of the circuit 110. In particular, during this period, the circuit 110 sets the pmos transistor to the 'off state' via the control signal Pda- used by the circuit 116 through the N M 0 S transistor of the circuit 1 1 6 The signal pda + used will set this transistor through circuit 1 1 6 to Off state ". Therefore, in the sampling phase ', to achieve the sampling purpose, V i η-is applied to the comparator circuit 1 〇 0

9818twf.ptd 第9頁 1223925 五、發明說明(5) 的電路1 1 0的輸出信號。同樣,在該取樣階段,電路丨1 1將 Vin +輸出到比較器電路1〇〇。應注意到,pvin + *pda+實質 上是不重疊信號,且在任何時間,Vin— *Vda_均可作為電 路1 1 0的輸出結果進行傳送。它所具有的進一步優點就是 通過電路115的PMOS電晶體或NMOS電晶體均可將Vin-作為 電路110的輸出結果進行提供,pM〇s電晶體或關〇8電晶體 這種功能重復使用的原因是確保電路丨丨〇輸出結果的信號 品質。例如:在電路1 1 〇中,單獨使用通過電路丨丨5的PM〇s 電晶體或NMOS電晶體可能足以將輸入信號VinX—傳送到比 較器電路1 00。然而,重復使用並同時提供PM〇s電晶體和 NMOS電晶體的原因是可消除弱信號出現的可能性,因為一 個電晶體可能在傳送高位狀態時處於弱狀態,而另一電晶 體可能在傳送低位狀態時處於弱狀態。該基本原理同樣適 用於通過電路116、117、118。請繼續參閱第1B圖中的計 時圖j在取樣階段完成之後緊接著是控制信號pvin+,這 樣在最後一個輸入信號採樣之後且在pda+變為高位狀態之 前,會出現一段時間延遲△ T2。在所述實施形式中,採 用時間延遲△ T 3作為避免比較器電路丨〇 〇輸出結果信號干 涉(i n t e r f e r e n c e )的實施例。 當控制信號p v i n +處於"低位,,狀態,電路丨丨1通過電路 117所用的已反相pvin -信號將通過電路117的?^3電晶體 設置為π斷開狀態”,通過電路丨17所用的Pvin+將關〇3電晶 體設置為π斷開狀態”。在這段時間,當p v i n +處於低位狀 態且Pda+處於高位狀態時,通過電路丨丨8的PM〇s電晶體和9818twf.ptd Page 9 1223925 5. The output signal of the circuit 1 1 0 of the invention description (5). Also, in this sampling phase, the circuit 11 outputs Vin + to the comparator circuit 100. It should be noted that pvin + * pda + is essentially a non-overlapping signal, and at any time, Vin— * Vda_ can be transmitted as the output result of circuit 1 1 0. Its further advantage is that Vin- can be provided as the output result of circuit 110 through the PMOS transistor or NMOS transistor of circuit 115. The reason for the repeated use of this function is pM0s transistor or OFF08 transistor. It is to ensure the signal quality of the output result of the circuit. For example, in circuit 1 10, using a PMMOS transistor or an NMOS transistor through circuit 5 alone may be sufficient to transfer the input signal VinX- to the comparator circuit 100. However, the reason for reusing and providing both PMMOS transistors and NMOS transistors is to eliminate the possibility of weak signals, because one transistor may be in a weak state when transmitting a high state, and another transistor may be transmitting. Weak state in low state. This basic principle also applies to the passing circuits 116, 117, 118. Please continue to refer to the timing chart in Figure 1B. After the sampling phase is completed, the control signal pvin + is immediately followed. After the last input signal is sampled and before pda + becomes the high state, there will be a delay △ T2. In the implementation form, a time delay ΔT 3 is used as an embodiment to avoid the output signal interference (i n t e r f e r e n c e) of the comparator circuit. When the control signal p v i n + is in the "low," state, the circuit 丨 1 passes through the inverted pvin-signal used by the circuit 117? ^ 3 transistor is set to the π-off state ", and the transistor 03 is set to the π-off state by Pvin + used in the circuit. During this time, when p v i n + is in a low state and Pda + is in a high state, the PMos transistor and

9818twf.ptd 第10頁 1223925 五、發明說明(6) NMOS電晶體均處於π接通狀態”且其中的任一電晶體均提供 含有類比電壓參照、並作為電路111輸出結果的號 Vda+。因此,在位元週期比較階段,Vda+作為提"^到比較 器電路1 0 0用作比較目的的電路1 1 1的輸出信號。類' 似地, 電路1 1 0在位元週期階段時,會向比較器電路丨〇 〇輸出信號 Vda- ° 如前所述,類比/數位轉換器轉換過程發生在以下兩 個不同階段:取樣階段和位元週期階段。在取樣階段,類 比信號V i η ~和V i η +應用於電路1 1 〇和1 1 1,在位元週期階段 提供類比電壓參照信號Vda-和Vda+。 又 一旦取樣信號出現在比較器電路1〇〇的輸入端,且處 在取樣初始階段之前,所有自動歸零控制信號(即:R i、 R2、R3、R4、R5和R6)會設置(set)為高位狀態,目的是 借助於大家熟知的V c m將它們的開關關閉,使得對應的子 比車父器保持在自動細零狀態(auto - zeroing sta t e ^。取樣 階段開始時,開關會順序打開,剩餘電荷會存儲到所有子 比較器的輸入節點。當取樣階段完成時,R 6變為低位狀 態,對應的開關打開,經過一段時間延遲△ T i後\ p V丨n + 就會變為低位狀態。在取樣階段結束時,存儲在^^—和 V i n T +郎點的電何正比於信號v i η -和V i η +,同時還正比 於複級比較器的輸入偏移電壓(〇ffset voltage)。若奴略 因複級比較器不同轉換器内電勢(potent ial)不同導致"的 該偏移電壓,則正電壓節點處的存儲電荷可表示為二 (Vcm - Vin+) * C ,負電壓節點處的存儲電荷可表示為9818twf.ptd Page 10 1223925 V. Description of the invention (6) NMOS transistors are in π-on state "and any one of them provides a number Vda + which contains an analog voltage reference and is used as the output result of circuit 111. Therefore, In the bit period comparison phase, Vda + is used as an output signal for the comparator circuit 1 0 0 as a comparison circuit 1 1 1. Similarly, when the circuit 1 1 0 is in the bit period phase, it will Output signal Vda- ° to the comparator circuit As mentioned earlier, the analog / digital converter conversion process occurs in the following two different phases: the sampling phase and the bit period phase. During the sampling phase, the analog signal V i η ~ And V i η + are applied to the circuits 1 1 0 and 1 1 1 to provide analog voltage reference signals Vda- and Vda + during the bit period. Once the sampling signal appears at the input terminal of the comparator circuit 100, and Before the initial phase of sampling, all the auto-zero control signals (ie, R i, R2, R3, R4, R5, and R6) will be set to the high state in order to close their switches with the help of the well-known V cm So that the corresponding Than the car parent device is maintained in an auto-zeroing state (auto-zeroing sta te ^. At the beginning of the sampling phase, the switches will open sequentially, and the remaining charge will be stored in the input nodes of all the sub-comparators. When the sampling phase is completed, R 6 changes It is in the low state, and the corresponding switch is turned on. After a period of delay Δ T i, \ p V 丨 n + will change to the low state. At the end of the sampling phase, the electricity stored in ^^ — and V in T + Lang point is stored. What is proportional to the signals vi η-and Vi i η + and at the same time proportional to the input offset voltage (0ffset voltage) of the complex comparator. Ronaldo has different potentials (potent ial) in different converters of the complex comparator. Leading to this offset voltage, the stored charge at the positive voltage node can be expressed as two (Vcm-Vin +) * C, and the stored charge at the negative voltage node can be expressed as

12239251223925

Q- = (Vcm - Vin-)氺 C ° ^:ΐ ί入信號取樣結束後’就進入到位元週期階段, (即^類比電壓參照),產生多個位元比較輸出,:, =:ΐ Ϊι: Ξ所Ϊ樣信號與類比電壓參照信號“比較。 狀態,PWn處於低位⑼態。$樣通^處於南位 ίί ί Jiif低位與所用時間樣本相對㉟,也νυ將邏3輯 仏號表迹為數位語言的二進位檢帝 殘科Q- = (Vcm-Vin-) 氺 C ° ^: ΐ ί After the input signal is sampled, it enters the bit period stage (ie, ^ analog voltage reference), and generates multiple bit comparison outputs,:, =: ΐ Ϊι: The comparison between the sample signal and the analog voltage reference signal. State, PWn is in the low state. $ 样 通 ^ is in the south position. Ί The Jiif low position is relative to the time sample used. Binary Examinations in Digital Language

端VinT+和VinT-上都存在一個對應的的已確定 電壓水平’該電壓水平可通過公式VinT+ = Ί進1粗略估算,<中❹已在上文述及。隨後,基於兩 即』VinT+和VinT-上的這些臨時確定值,經過一 ΐ ί ί,對應的比較結果就會在終端cmp0ut生成。此處‘ 述時間延遲為諸如串聯子比較器數量之類參數的函數。又 ί Ϊ t ί,端”以上離散階梯值的數S對應於終端cmpOut 上比車父輸出/位元的數目。A corresponding determined voltage level exists at both the terminals VinT + and VinT-. This voltage level can be roughly estimated by the formula VinT + = Ί 进 1, < Zhong❹ has been mentioned above. Then, based on these temporary determination values on VinT + and VinT-, after a ΐ ί ί, the corresponding comparison result will be generated at the terminal cmp0ut. Here the time delay is a function of parameters such as the number of sub-comparators in series. And ί Ϊ t ,, the number S above the discrete step value of the terminal corresponds to the number of output / bits on the terminal cmpOut.

第2圖表示採用以前技術時比較器電路丨〇 〇 人 分子比較器2 0 〇。第2圖所示微分子比較器2 〇 〇為一王 置,可同時接收信號I N〜和丨N +。當輸入信號丨N +處於低^Fig. 2 shows the comparator circuit when the prior art is used. The human molecular comparator 200. The micromolecular comparator 200 shown in FIG. 2 is a master device, and can simultaneously receive signals I N ~ and N +. When the input signal 丨 N + is low ^

1223925 五、發明說明(8) 狀態時,Ρ Μ 0 S電晶體2 0 1設置為"接通狀態"而p M 〇 s電晶體 2 0 3設置為"斷開狀態”。運行在飽和狀態模式下的流經 PMOS電晶體2 0 2的電流會出現在節點b處,同時提供某一個 電壓Vb。若考慮到推挽式電晶體(pUSh-pUii transistor) 2 0 5 - 2 0 6,就可明顯鑒別PMOS電晶體205確實是運行在飽和 狀態’此時若V b處於高位狀態,則〇 υ τ +接地。推挽式電晶 體2 0 7和2 0 8情況與此類似,當I N +處於高位狀態,ρ μ 〇 S電 晶體2 0 3設置為Η接通狀態π ,在節點a處形成ν a,〇 υ τ -接 地。 在實際電路中,節點A和節點B上的電壓可能不同,這 樣的話,需要在下一取樣階段之前消除它們之間的偏移電 壓(offset voltage)。節點A和節點B上的信號還會具有與 這些節點相關的某些環境雜訊。子比較器2 〇 〇可減輕或完 全取消(cancel)該雜訊並在其輸出端提供電壓增益。放大 的微分電壓輸出和雜訊減小可表述如下:若假定單端接地 節點A用於包括205和206 (或207和208)的增益級,則子 比較器的微分輸出= [A(Vin+ + 雜訊)-A(Vin- + 雜 訊)],此時可抵消雜訊且獲得一個放大微分電壓輸出值A (2Vin ) 〇 本發明另一優點是取樣和保持過程(h ο 1 d p r 〇 c e s s )運 行時,在串聯的子比較器之每一級,與該級子比較器相關 的輸出信號均可相對於該級輸入信號獲得一增益,並可具 有一降低的雜訊水平(level)。在串聯的子比較器之每一 級重復此種電壓增益和雜訊降低,並對各情況與電壓增益1223925 V. Description of the invention (8) In the state, the P M 0 S transistor 2 0 1 is set to " on state " and the p M 0s transistor 2 0 3 is set to " off state. &Quot; The current flowing through the PMOS transistor 2 0 2 in the saturation state mode will appear at node b, and at the same time provide a certain voltage Vb. If the push-pull transistor (pUSh-pUii transistor) is considered 2 0 5-2 0 6 , It can be clearly identified that the PMOS transistor 205 is indeed operating in a saturated state. 'At this time, if V b is in a high state, then υ τ + ground. Push-pull transistors 207 and 208 are similar to this, when IN + is in a high state, ρ μ 〇S transistor 2 0 3 is set to Η on state π, ν a, 〇 τ-ground is formed at node a. In the actual circuit, the voltage on node A and node B It may be different. In this case, the offset voltage between them needs to be eliminated before the next sampling phase. The signals on node A and node B will also have some environmental noise related to these nodes. Sub-comparator 2 00 can reduce or completely cancel the noise and cancel it The terminal provides voltage gain. The amplified differential voltage output and noise reduction can be expressed as follows: If it is assumed that the single-ended ground node A is used for a gain stage including 205 and 206 (or 207 and 208), then the differential output of the sub-comparator = [ A (Vin + + noise) -A (Vin- + noise)]. At this time, the noise can be canceled and an amplified differential voltage output value A (2Vin) can be obtained. Another advantage of the present invention is the sampling and holding process (h ο 1 dpr 〇cess), at each stage of the series of sub-comparators, the output signal related to the sub-comparator of the stage can obtain a gain relative to the input signal of the stage, and can have a reduced noise level ( level). Repeat this voltage gain and noise reduction at each stage of the series of sub-comparators, and

9818twf.ptd 第13頁 12239259818twf.ptd Page 13 1223925

及雜訊之減小作取捨分析。第3圖表示由輸入信號3 〇 i控制 的傳統反相子比較器。當輸入信號30 1處於低位狀態, ?%05電晶體3 2 0處於”接通狀態„,.〇3電晶體31()處於,,斷 開狀態”時,輸出結果為VDD。然而,當該輸入信號處於高 位狀,態,NMOS&電晶體31〇處於”接通狀態,,,pM〇s電晶體32〇 處於”斷開>狀態”時,輸出結果為vss。即使足夠高或足夠 低的輸入信號出現在反相器(第3圖)輸入節點,也不太 可能出現與電能消耗有關的問題。另外,其他任何灰色地 帶(gjay z^ne:)信號均可同時將電晶體?1{〇3 gw和nmOS 310、没置為接通狀態",因而會導致VDD和之間出現電And noise reduction analysis. Fig. 3 shows a conventional inverter comparator controlled by an input signal 30i. When the input signal 30 1 is in the low state,?% 05 transistor 3 2 0 is in the “on state”, .03 transistor 31 () is in, and the off state ”, the output result is VDD. However, when this When the input signal is in a high state, the NMOS & transistor 31o is in the "on state", and when the pMOS transistor 32o is in the "off > state", the output result is vss. Even if an input signal high enough or low appears at the input node of the inverter (Figure 3), problems related to power consumption are unlikely to occur. In addition, any other gray area (gjay z ^ ne :) signal can be used for the transistor at the same time? 1 {〇3 gw and nmOS 310, not placed in the on state ", which will cause electricity to appear between VDD and

::二2:Γ : ’在比較過程中通常會不可避免地出現 这種類型的灰色地帶信號。 田白ί ί :步3問題是,由於在很多含類比/數位功能的 αα 不同階段之間會出現時間延遲,在時間延 樣Λ耗等量電能,故有必要縮ϊί種^延遲 雷、m 時間延遲過程中電能的消耗。另一 ::如:m換電路,還需要傳送可靠的輸出結 程#換所# &的裝置不太可能採用把正常數位反相器因制 [發明内容1不穩定輸入過渡區納入考量的機構。 為滿足上述需求, 相器和鎖存器微分結構 比數位轉換的複級比較 多個全微分子比較器,:: two 2: Γ: ’This type of gray zone signal is usually unavoidable during comparison. Tian Bai ί: The problem in step 3 is that because there are time delays between different αα phases with analog / digital functions, and the same amount of power is consumed in the time delay samples, it is necessary to reduce the delay. Power consumption during time delay. Another :: For example, if you change the circuit, you also need to transmit a reliable output junction. # 换 所 # & The device is unlikely to use a normal digital inverter due to the [inventive content 1 unstable input transition area mechanism. In order to meet the above requirements, the differential structure of the phaser and the latch is compared with the complex comparison of digital conversion.

本發明採用了全微分、單端接地反 (F S L )。該結構包括用於完成類 器’該複級比較器包括連續串聯的 多個反相器子比較器,一個鎖存器The present invention uses a fully differential, single-ended ground (F S L). The structure includes a complete comparator. The complex comparator includes a plurality of inverter sub-comparators connected in series, and a latch.

第14頁 1223925 五、發明說明(ίο) 型微分子比較器,多個反相 行類比數位轉換時,複級比 耗會降低,且可靠性將獲得 合使用均衡控制信號(equal 月έ 降低 k ^(power down si 度、節約電能、降低環境雜 根據本發明另一特徵, 器’應用於比較輪入信號的 進行取樣和保存兩個過程以 照信號。均衡控制信號用於 降低控制信號用於在取樣階 間’降低或切斷比較器的至 包括提供一個下降沿鎖存器 降沿上保持一個輪出電壓。 輸入區減輕或消除該比較器 本說明書所述任何特徵 圍之内除非該特徵組合從 悉本領域技術者知識角度來 進行總結,此處述及了本發 點。當然,應該理解為並非 均體現在本發明的任何一種 詳細描述和申請專利範圍後 和特徵。 為讓本發明之上述和其 器和一個鎖存器。這樣’在進 較器的速度會提高’而電能消 改善。與本發明複級比較器結 izing control signal)和電 gnal)可達到進一步提高速 訊的效果。 本發明所述為一種使用比較 方法,該方法包括對輸入信號 比較該取樣輸入信號與電壓參 均衡比較器内偏移電壓,電能 段和比較階段之間的一段時 少一個元件的電源。該方法還 ,以便在該下降沿鎖存器的下 該鎖存器還可從裝置的不穩定 的子比較器輸出電壓水平。 或特徵組合均包括在本發明範 产了文角度、說明書角度及熟 說是相互矛盾的。為對本發明 明的某些特徵、優點和創新 所有這些特徵、優點和創新點 實%形式中。參閱本發明以下 ’可瞭解到本發明的其他優點 他目的、特徵、和優點能更明 拳Page 14 1223925 V. Description of the invention (ίο) micromolecular comparator, when multiple inverting lines are analog-to-digital conversion, the complex specific power consumption will be reduced, and the reliability will obtain the combined equalization control signal (equal monthly reduction k According to another feature of the present invention, the device is used to compare two processes of sampling and saving the turn-in signal to illuminate the signal. The equalization control signal is used to reduce the control signal and 'Sampling down or shutting down the comparator between sampling stages includes providing a falling edge latch to maintain a round-out voltage. The input area mitigates or eliminates the comparator within any feature described in this specification unless that feature The combination is summarized from the perspective of the knowledge of those skilled in the art, and the present point is mentioned here. Of course, it should be understood that not all of them are reflected in any detailed description of the present invention and the scope and features of the patent application. In order for the present invention The above and its device and a latch. In this way, the speed of the comparator will be increased and the power consumption will be improved. Compared with the complex comparator of the present invention, izing control signal) and electrical gnal) can achieve the effect of further increasing the speed of the signal. The present invention is a method for using a comparison, which comprises comparing an input signal with the sampled input signal and a voltage reference to equalize the offset voltage in the comparator, the power supply of at least one element between the energy segment and the comparison segment. The method also allows the latch to output voltage levels from the device's unstable sub-comparator below the falling edge latch. Or the feature combinations are included in the present invention, the production angle, the description angle and the proverb are contradictory. Certain features, advantages, and innovations that are apparent to the present invention are all in the form of%. The following advantages of the present invention can be understood by referring to the following of the present invention. His objectives, features, and advantages can be more clearly understood.

1223925 五、發明說明(11) 顯易懂,下文特舉一較佳實施例,並配合所附圖式,作詳 細說明如下: [實施方式] 參照附圖,本專利說明書對本發明幾個較佳實施形式 進行說明,附圖中均標注有詳細參考號。參考號的使用原 則是,只要有可能,附圖和說明書中相同或相似的參考號 用於表示相同或相似部件。值得注意的是,附圖採用簡化 形式繪製,因此沒有精確刻度。在本專利說明書中,僅為 描述方便和表達清楚的目的,參照附圖使用了諸如頂部、 底部、左邊、右邊、向上、向下、上邊、上部、下部、下 邊、後面和前面之類的方向性術語。這些方向性術語不應 理解為用於限制本發明範圍的術語。 儘管本發明說明書包括某幾個實施形式,應理解為這 些實施形式僅是對本發明進行示例性說明,而不應理解為 對本發明的限制。以下之詳細描述雖然僅針對例式性實施 例加以討論,只要是落入後附申請專利範圍所定義的發明 精神及範疇内,仍應理解為包含此些實施例之所有修改、 替換或是等效的運用。本發明可與本技術領域通常使用的 各種積體電路共同使用,僅僅是為了理解本發明的目的, 此處提供了經常使用的幾個步驟。總體來說,本發明在電 路領域具有實用性。然而,僅為說明本發明,以下描述内 容僅關於一種改進的全微分、單端接地反相器和鎖存器微 分結構内信號比較的設備和方法。 請詳細參照第4 A圖,該圖提供了本發明一種實施形式1223925 V. Description of the invention (11) It is easy to understand. The following is a detailed description of a preferred embodiment and the accompanying drawings: [Embodiment] Referring to the drawings, this patent specification provides several advantages of the present invention. The implementation form is described, and detailed reference numbers are marked in the drawings. The principle of using reference numbers is that wherever possible, the same or similar reference numbers are used in the drawings and the description to refer to the same or similar parts. It is worth noting that the drawings are drawn in simplified form and therefore are not accurately scaled. In this patent specification, for convenience of description and clarity, directions such as top, bottom, left, right, up, down, top, top, bottom, bottom, back, and front are used with reference to the drawings. Sex term. These directional terms should not be understood as terms used to limit the scope of the invention. Although the description of the present invention includes certain embodiments, it should be understood that these embodiments are merely exemplary illustrations of the present invention and should not be construed as limiting the present invention. Although the following detailed description is only discussed for the exemplary embodiments, as long as it falls within the spirit and scope of the invention defined by the scope of the attached patent application, it should be understood to include all modifications, replacements, etc. of these embodiments Effective use. The present invention can be used with various integrated circuits commonly used in the technical field, only for the purpose of understanding the present invention, here are provided several steps that are often used. In general, the present invention has utility in the field of circuits. However, for the purpose of illustrating the present invention, the following description relates only to an improved apparatus and method for comparing signals in a fully differential, single-ended grounded inverter and latch differential structure. Please refer to FIG. 4A in detail, which provides an implementation form of the present invention

9818twf.ptd 第16頁 1223925 五、發明說明(12) 的示意圖,與第1A圖中全微分、單端接地結構(FS)不 同,該示意圖包括全微分、單端接地反相器和鎖存器微分 (FSL )結構。更詳細情況是,第4A圖中該全微分、單端 接地反相器和鎖存器微分結構包括複級比較器4 0 0,為改 善性能,複級比較器4 0 0包括全微分子比較器、單端接地 反相器和閂鎖微分結構。性能改善至少包括速度性能改善 (如:用於諸如405-408的均衡裝置(equalization device))、電能消耗改善(如··用於諸如405-408, 4 6 2,4 6 4,4 6 6,4 6 8和4 7 2的電能降低結構)和可靠性性 能改善(如:設計用於附加(extra)微分增益,尤其是用 於減輕正常數位反相器不穩定輸入過渡區的472)。如本 實施形式所述,複級比較器4 0 0包括多個連續串聯的全微 分子比較器405、406、407和408,多個反相器子比較器 462、464、466和468,一個鎖存器型微分子比較器 (ltchBuff)472 ,多個反相器474和476和一個鎖存器480。 在所述實施形式中,用於複級比較器4 0 0的微分子比較器 405、40 6、407和408類似於第1A圖的微分子比較器1〇5、 106、107和108。然而,用於上述實施形式的每個再生微 分子比較器可進一步包括一個諸如第5圖所示510之類的均 衡結構,諸如第6圖所示6 0 0之類的電能降低結構。根據本 發明其他特徵,電能降低結構還可與反相器子比較器 462、464、466和468共同使用。在修改後的實施形式中, 根據本發明其他特徵,微分子比較器還可包括非再生全微 分子比較器。9818twf.ptd Page 16 1223925 5. The schematic diagram of the invention description (12) is different from the fully differential and single-ended grounded structure (FS) in Figure 1A. The diagram includes a fully differential, single-ended grounded inverter and latch. Differential (FSL) structure. In more detail, the fully differential, single-ended grounded inverter and latch differential structure in FIG. 4A includes a complex comparator 4 0 0. In order to improve performance, the complex comparator 4 0 0 includes a full differential comparison Converter, single-ended grounded inverter, and latched differential structure. Performance improvements include at least speed performance improvements (eg, for equalization devices such as 405-408), power consumption improvements (eg, · for use such as 405-408, 4 6 2, 4 6 4, 4 6 6 , 4 6 8 and 4 7 2 power reduction structure) and reliability performance improvement (such as: designed for additional (extra) differential gain, especially for reducing the 472 input transition region of the normal digital inverter unstable). As described in this embodiment, the complex comparator 400 includes a plurality of serially connected all-micromolecule comparators 405, 406, 407, and 408, a plurality of inverter sub-comparators 462, 464, 466, and 468, one A latch-type micromolecular comparator (ltchBuff) 472, a plurality of inverters 474 and 476, and a latch 480. In the described embodiment, the micromolecular comparators 405, 406, 407, and 408 for the complex comparator 400 are similar to the micromolecular comparators 105, 106, 107, and 108 of FIG. 1A. However, each of the regenerated micromolecular comparators used in the above embodiment may further include a balanced structure such as 510 shown in FIG. 5 and a power reduction structure such as 600 shown in FIG. 6. According to other features of the invention, the power reduction structure can also be used in conjunction with inverter sub-comparators 462, 464, 466, and 468. In a modified embodiment, according to other features of the present invention, the micromolecule comparator may further include a non-regenerative all-micromolecule comparator.

9818twf.ptd 第17頁 1223925 五、發明說明(13) ---- 複級比較器4 0 〇串聯子比較器中坌 ^ σ ^ ^ 作為取樣信號的輸入信號VinT—和作::: : = ;接: 入信號VinT+。類似於前述結合第= Κ = :輸 VinT+ -(Q + )/ C + Vda+ = Vcm - ( Vin4- ή 丄、斗、 中· Q+ =(Vcm - Vin+) * C ,另外VinT_ = Vcm _ (9818twf.ptd Page 17 1223925 V. Description of the invention (13) ---- ^ ^ σ ^ ^ in the cascaded sub-comparator of the double-stage comparator is used as the input signal VinT of the sampling signal: and ::: = ; Connect: incoming signal VinT +. Similar to the aforementioned combination = Κ =: Lose VinT +-(Q +) / C + Vda + = Vcm-(Vin4- 丄, bucket, middle · Q + = (Vcm-Vin +) * C, and VinT_ = Vcm _ (

Vin- - Vda-)。這樣,兩輸入信號之間的偏差就是= VinTi - VinT- = _[(Vin+ - Vin-) _ (Vda+ - Vda-)] -(2Vin - 2Vda)。當該輸入偏差輸入到本發明的FSl比較 器結構時,在輸出端將獲得一個邏輯高位狀態或低位狀態 信號(信號的極性取決於應用情況)。·該種情況優點是在 此實施形式中提供信號Vin+、Vin_、Vda+ *Vda_的通過電 路410和411類似於用.於第ία圖所述以前技術中使用的通過 電路110和111。微分子比較器40 5也接收均衡控制信號EQlJ 和電能降低控制信號PD ^均衡控制信號EQU控制第5圖所示 典型微分子比較器500内所示的均衡結構51〇,電能降低控 制信號PD控制第6圖所示電能降低裝置6 1 〇。微分子比較^ 405輸出兩個輸出信號4 21和422。 σ 微分子比較器406接收來自微分子比較器405的輸出信 號4 2 1和4 2 2 ’來自信號源的均衡控制信號£ q υ,來自另一 信號源的電能降低控制信號p D。微分子比較器4 〇 6輸出兩 個輸出#號423和424,微分子比較器407接收來自微分子 比較器40 6的輸出信號42 1和42 2,均衡控制信號EQlJ和^電能 降低控制k號?1)作為自己的輸入信號’並輸出兩個輸出作 號42 5和4 2 6。微分子比較器4 0 8接收來自微分子比較器4〇"7Vin--Vda-). In this way, the deviation between the two input signals is = VinTi-VinT- = _ [(Vin +-Vin-) _ (Vda +-Vda-)]-(2Vin-2Vda). When the input deviation is input to the FS1 comparator structure of the present invention, a logic high state or low state signal will be obtained at the output (the polarity of the signal depends on the application). The advantage of this case is that the pass circuits 410 and 411 which provide the signals Vin +, Vin_, Vda + * Vda_ in this embodiment are similar to the pass circuits 110 and 111 used in the prior art described in FIG. The micromolecule comparator 405 also receives the equalization control signal EQlJ and the power reduction control signal PD. The equalization control signal EQU controls the equalization structure 51 shown in the typical micromolecule comparator 500 shown in FIG. 5. The power reduction control signal PD controls. The electric energy reduction device 6 1 0 shown in FIG. 6. Micromolecule comparison 405 outputs two output signals 4 21 and 422. The σ micromolecular comparator 406 receives the output signals 4 2 1 and 4 2 2 from the micromolecular comparator 405 'equalized control signals £ q υ from a signal source, and the power reduction control signal p D from another signal source. The micromolecular comparator 4 〇6 outputs two output numbers 423 and 424, the micromolecular comparator 407 receives the output signals 42 1 and 42 2 from the micromolecular comparator 406, and the equalization control signals EQlJ and ^ electricity reduction control k number ? 1) As its own input signal 'and output two output numbers 42 5 and 4 2 6. The micromolecular comparator 4 0 8 receives from the micromolecular comparator 4 0 " 7

9818twf.ptd 第18頁 1223925 五、發明說明(14) 的輸出信號4 2 5和42 6,均衡和電能降低控制信號equ和 PD,並輸出OUT+和OUT-。 用於複級比較器400微分子比較器405、406、407和 4 0 8的均衡控制信號E Q U由一均衡控制信號源(圖中未示出 )提供。均衡控制信號EQU+和EQU-控制的均衡結構5 1 0 (第5圖)添加到微分子比較器405、406、407和408,目 的是縮短從微分子比較器4 0 5、4 0 6、4 0 7和4 0 8輸出節點的 相對狀態(前一比較結果的殘留狀態)到它們均衡/平衡 狀態的恢復時間。 應用到微分子比較器405、406、407和408和反相器子 比較器462、464、4 6 6和4 6 8上的電能降低控制信號Pd是由 電能降低控制信號源(圖中未示出)提供。由電能降低控 制信號P D所控制的電能降低裝置是被設計來降低電能消 耗。電能降低控制信號PD在每一序列比較操作前後能幫助 降低電能消耗的方法是在比較處理過程中間確保微分子比 較器4 0 5、4 0 6、4 0 7和4 0 8處於電能降低狀態。 反相器子比較器462、464、466和468屬於單端接地反 相子比較器,串聯在微分子比較器4 0 5、4 0 6、4 0 7和4 0 8之 後,在佔用相當小矽晶體空間的情況下提供附加(e X t r a ) 信號增益。在所述實施形式中,反相器子比較器4 6 2、 4 6 4、4 6 6和4 6 8類似以前技術中的反相器子比較器1 6 2、 1 6 4、1 6 6、1 6 8。然而,根據本發明,每個反相器子比較 器162、164、166、168均經過改良,添加了諸如第6圖所 示電能降低結構6 0 0之類電能降低裝置。電能降低控制信9818twf.ptd Page 18 1223925 V. Description of the invention (14) The output signals 4 2 5 and 42 6 are equalization and power reduction control signals equ and PD, and output OUT + and OUT-. The equalization control signal E Q U for the multi-level comparator 400 micromolecular comparators 405, 406, 407, and 408 is provided by an equalization control signal source (not shown in the figure). The equalization control signals EQU + and EQU- controlled equalization structures 5 1 0 (figure 5) are added to the micromolecular comparators 405, 406, 407, and 408 in order to shorten the time from the micromolecular comparators 4 0 5, 4 0 6, 4 0 7 and 4 0 8 The recovery time from the relative state of the output nodes (residual state of the previous comparison result) to their equilibrium / balanced state. The power reduction control signal Pd applied to the micromolecular comparators 405, 406, 407, and 408 and the inverter sub-comparators 462, 464, 4 6 6 and 4 6 8 is a power reduction control signal source (not shown in the figure) Out) provided. The power reduction device controlled by the power reduction control signal PD is designed to reduce power consumption. The power reduction control signal PD can help reduce power consumption before and after each sequence comparison operation by ensuring that the micromolecular comparators 40, 5, 6, 4, 7 and 4 0 8 are in a reduced power state during the comparison process. Inverter sub-comparators 462, 464, 466, and 468 are single-ended grounded inverter sub-comparators, which are connected in series after the micromolecular comparators 4 0 5, 4 0 6, 4 0 7 and 4 0 8 Provides additional (e X tra) signal gain in the case of silicon crystal space. In the described embodiment, the inverter sub-comparators 4 6 2, 4 6 4, 4, 6 6 and 4 6 8 are similar to the inverter sub-comparators 1 6 2, 1 6 4, 1 6 6 in the prior art. , 1 6 8. However, according to the present invention, each of the inverter sub-comparators 162, 164, 166, and 168 is improved by adding a power reduction device such as the power reduction structure 600 shown in FIG. Power reduction control letter

9818twf.ptd 第19頁 1223925 五、發明說明(15) 號PD控制反相器子比較器46 2、464、4 6 6和468的附加電能 降低裝置。 反相器子比較器462、464串聯在一起,反相器子比較 器4 6 2接收電能降低控制信號PD和微分子比較器4 0 8的輸出 信號OUT +作為其輸入信號,並提供輸出信號4 6 3。反相器 子比較器464接收反相器子比較器462的輸出信號463和電 能降低控制信號PD,並提供Itch Buff 4 7 2使用的輸出信號 469。與此類似,反相器子比較器466、468串聯在一起, 反相器子比較器4 6 6接收電能降低控制信號PD和微分子比 較器408的輸出信號OUT-作為其輸入信號,並提供輸出信 號4 67。反相器子比較器468接收反相器子比較器466的輸 出信號467和電能降低控制信號PD,並提供ItchBuff 472 使用的輸出信號471。第一組反相器子比較器462、464和 第二組反相器子比較器466、468相互並聯連接,且也與微 分子比較器408並聯連接。 第4 B圖表示根據本發明實施形式,第4 A圖所示複級比 較器4 0 0控制信號示意圖。最初,所有自動歸零控制信號 (即:Rl 、R2 、R3 、R4、R5和R6 )設置為"高位狀態,,,所 有開關均處於閉合狀態,並均具有一個共同電壓V c m。電 能降低控制信號PD設計原則為可讓微分子比較器4 0 5、 4 0 6、4 0 7、4 0 8在比較操作運行前後均處於電能降低狀 態。完成輸入信號V i η取樣階段的方式類似於上述以前技 術中所描述方法,區別在於第5圖所示均衡結構5 1 0。第5 圖所示均衡結構5 1 0由均衡控制信號EQU控制,如同上述結9818twf.ptd Page 19 1223925 V. Description of the invention (15) PD controlled inverter sub-comparators 46 2, 464, 4 6 6 and 468 additional power reduction device. The inverter sub-comparators 462 and 464 are connected in series. The inverter sub-comparator 4 6 2 receives the power reduction control signal PD and the output signal OUT + of the micromolecule comparator 408 as its input signal and provides an output signal. 4 6 3. The inverter sub-comparator 464 receives the output signal 463 of the inverter sub-comparator 462 and the power reduction control signal PD, and provides an output signal 469 used by Itch Buff 4 72. Similarly, the inverter sub-comparators 466 and 468 are connected in series, and the inverter sub-comparators 4 6 6 receive the power reduction control signal PD and the output signal OUT- of the micromolecular comparator 408 as its input signals and provide Output signal 4 67. The inverter sub-comparator 468 receives the output signal 467 of the inverter sub-comparator 466 and the power reduction control signal PD, and provides an output signal 471 used by the ItchBuff 472. The first group of inverter sub-comparators 462, 464 and the second group of inverter sub-comparators 466, 468 are connected in parallel with each other, and are also connected in parallel with the micromolecular comparator 408. Fig. 4B shows a schematic diagram of the control signal of the complex comparator 400 shown in Fig. 4A according to the embodiment of the present invention. Initially, all the auto-zero control signals (ie, Rl, R2, R3, R4, R5, and R6) are set to " high state, and all switches are closed and all have a common voltage V c m. The design principle of the power reduction control signal PD is to allow the micromolecular comparators 405, 406, 407, 408 to be in a reduced power state before and after the comparison operation. The method of completing the sampling phase of the input signal V i η is similar to the method described in the prior art above, except that the equalization structure 5 1 0 shown in FIG. 5 is used. The equalization structure 5 1 0 shown in FIG. 5 is controlled by the equalization control signal EQU, as described above.

9818twf.ptd 第20頁 1223925 五、發明說明(16) 合第5圖所示情況,可縮短從微分子比較器4 〇 5、4 〇 6、4 〇 7 和40 8輸出節點的相對狀態(前一比較結果的殘留狀態) 到它們均衡/平衡狀態的恢復時間。 作為本發明具體實施形式,控制信號Pv i n和控制信號 Pda為非重疊信號。在取樣階段之前,控制信號pv丨n就初 始化没置為"高位狀態”,而控制信號P d a在取樣過程中設 置為’’低位狀態”。設置控制信號pv i η為"高位狀態,,導致第 4Β圖所示通過電路41〇和411在比較過程的取樣階段將要被 取樣的類比輸入信號發送到複級比較器4 〇 〇。在取樣階段 結束後’緊接著是一段時間延遲ΔΤ1,然後控制信號Pvi η 設置為"低位狀態”,再經過另一時間延遲△ Τ 3,控制信號 P d a没置為”高位狀態”。熟悉該領域技術者均應承認,上 述每一時間延遲對於諸如將複級比較器4 〇 〇從一級設置 (set)及重設(reset)到另一級來說是必需的。 在比較過程的位元週期階段,控制信號Pda —直處於 高位狀態,這樣通過電路4 1 〇和4 1 1就可向微分子比較器 4 0 5提供包括類比電壓參照的信號”&。在位元週期階段, V d a表現為如第4 B圖所示的階梯形離散波形(s t a丨r η k e discrete waveform)。當PD控制信號降低時,就產生類比 數位轉換(包括兩個階段),此時所有微分子比較器和反 相器子比較器均處於主動(a c t i v e )狀態,故消耗直流電 (D C )電能。當進行位元週期和第一個取樣電壓比較時, 賦能(e n a b 1 e ) E N控制信號變為高位狀態,以賦能 ltchBuff472放大操作。在鎖存器480由鎖存器信號LTCH觸9818twf.ptd Page 20 1223925 V. Explanation of the invention (16) In combination with the situation shown in Figure 5, the relative state of the output nodes from the micromolecular comparators 4 0 05, 4 06, 4 07, and 40 8 (previously) A residual state of the comparison results) to their equilibrium / equilibrium recovery time. As a specific implementation form of the present invention, the control signal Pv i n and the control signal Pda are non-overlapping signals. Prior to the sampling phase, the control signal pvn is initialized and not set to " high state ", and the control signal Pda is set to ' low state during sampling. Setting the control signal pv i η to the "high" state causes the analog input signals to be sampled by the circuits 41 and 411 in the sampling phase of the comparison process as shown in Fig. 4B to be sent to the complex comparator 400. After the end of the sampling phase, 'is followed by a delay ΔΤ1, and then the control signal Pvi η is set to " low state, " and another time delay △ Τ3, the control signal Pda is not set to "high state." Those skilled in the art should recognize that each of the above time delays is necessary for, for example, setting and resetting the complex comparator 400 from one stage to another. Bits in the comparison process During the period, the control signal Pda is always in the high state, so that the micromolecular comparator 4 05 can be provided with a signal including an analog voltage reference through the circuits 4 10 and 4 1 1 "&. In the bit period phase, V d a appears as a stepped discrete waveform (s t a 丨 r η k e discrete waveform) as shown in FIG. 4B. When the PD control signal decreases, an analog-to-digital conversion (including two phases) occurs. At this time, all micromolecule comparators and inverter sub-comparators are in the active (a c t i v e) state, so they consume DC power (D C). When the bit period is compared with the first sampling voltage, the enable (e n a b 1 e) E N control signal becomes a high state to enable the ltchBuff472 amplification operation. The latch 480 is touched by the latch signal LTCH.

9818twf.ptd 第21頁 1223925 五、發明說明(17) 發到下降沿之前,在△ τ 2時間段内,E N應處於主動-高位 (act ive-high)狀態以便保證將適當的輸入信號輸送到鎖 存器4 8 0。當E N變為低位狀態後,Eq信號將對第5圖中節點 A和B處的電壓V a和V b進行均衡操作。第4 B圖所示E N控制信 號用於賦能ItchBuff 472 (第4A圖和第7圖中700 ),這樣 當EN處於高位狀態時,itchBuff 472就處於主動狀態,且 作為對輸入信號(IN -和IN+)的回應,會生成一個放大的 輸出信號對(OUT+和OUT-)。根據該實施形式,itchBuff 472包括一個内部電能降低結構,且EN (第4B圖和第7圖) 之反相是作為一電能降低信號運行。 當處於低位狀態時,EN去能(disable)(斷開)底部 的兩個電晶體NM0S (見第7圖),這樣就切斷了 VDD和VSS 之間的電流路徑。同時,當處於低位狀態時,EN將接通頂 部的兩個電晶體PM0S (見第7圖),這樣就可設置VDD的兩 個輸出節點(見第7圖中0UT+和OUT-)以便使得兩反相器474 和476 (第4A圖)出現邏輯高位狀態,從而不會導致產生 泄漏電路通道。 為減小電能消耗,當在輸入端(I N +和I N -)沒有適當 的輸入信號對時,E N可設置為低位狀態。有關減小電能消 耗的内谷已在苐4B圖中述及過,其中當pvin+ := i〇w (低 位狀態)且Pda+ = high (高位狀態)時,ΕΝ每個上升沿 的出現時間設置為遲於類比電壓參照信號Vda+上升沿的出 現時間。設計EN脈衝寬度時要考慮到itchBuff 472、反相 器級4 7 6 (第4A圖)和鎖存器48 0 (第4A圖)總的回應時9818twf.ptd Page 21 1223925 V. Description of the invention (17) Before sending to the falling edge, EN should be in an active-high state during the time period of △ τ 2 in order to ensure that the appropriate input signal is delivered to Latch 4 8 0. When E N becomes a low state, the Eq signal will perform an equalization operation on the voltages V a and V b at nodes A and B in FIG. 5. The EN control signal shown in Figure 4B is used to enable ItchBuff 472 (Figure 4A and 700 in Figure 7), so when EN is in the high state, itchBuff 472 is in the active state and acts as an input signal (IN- And IN +) will generate an amplified output signal pair (OUT + and OUT-). According to this implementation form, itchBuff 472 includes an internal power reduction structure, and the inversion of EN (Figures 4B and 7) operates as a power reduction signal. When in the low state, EN disables (disconnects) the two transistors NMOS on the bottom (see Figure 7), which cuts off the current path between VDD and VSS. At the same time, when in the low state, EN will turn on the top two transistors PM0S (see Figure 7), so that the two output nodes of VDD can be set (see OUT + and OUT- in Figure 7) so that the two Inverters 474 and 476 (Figure 4A) are logic high, which does not cause leakage circuit channels. To reduce power consumption, E N can be set to a low state when there are no appropriate input signal pairs at the inputs (I N + and I N-). The internal valley about reducing power consumption has been described in Figure 4B. When pvin +: = i〇w (low state) and Pda + = high (high state), the time of each rising edge of ENS is set to Later than the occurrence of the rising edge of the analog voltage reference signal Vda +. When designing the EN pulse width, consider the total response of itchBuff 472, inverter stage 4 7 6 (Figure 4A) and latch 48 0 (Figure 4A)

98l8twf.ptd 第22頁 122392598l8twf.ptd Page 22 1223925

間。因此,在LTCH-的下降沿,完好的輸 現在itchBuff 472和反相器4 7 6處,且在呆出 端會閂鎖住一個明確的比較結果。 存裔4 8 0的輸出 第5〃圖為全微分子比較器示意圖,此處所述 類似於第2圖的微分子比較器2 〇 〇,區別在於 /二 唬E Q U控制。另外,本發明還可根據第4 β圖中的時, 將電能降低控制信號PD提供到諸如微分子比較器5 〇 〇 ^類 的元件。 根據本發明實施形式,當諸如複級比較器4 〇 〇處於位 元週期階段時,均衡控制信號EQU和電能降低信號?1)可用 於微分子比較器405、406、407和408。均衡控制信號EQU 適用於均衡結構510,將導致節點52 0處產生電壓:在節 點5 3 0處產生電壓Vb,經均衡後,可加速下一比較階段的 進行。根據本發明實施形式,電能降低控制信號PD控制一 載入電路。電能降低控制信號PD適用於微分子比較器 4〇5 、406 、407 # 口 408 ,反才目器子比較器462 、464 、466 洋口 4 6 8,以便減少電能消耗。電能降低信號PD適用於微分子 比較器4 0 5、4 0 6、4 0 7和4 0 8,以便在前面所述轉換序列前 後將這些子比較器斷電。 第6圖表示單端接地反相子比較器6 0 0示意圖,比如它 可對應於串聯微分子比較器405、406、407和408中最後一 個微分子比較器4 0 8後面的連續串聯的反相器子比較器4 6 2 和4 6 4中的某一個。在所述實施形式中,反相子比較器6 0 0between. Therefore, on the falling edge of LTCH-, the intact output is now at itchBuff 472 and inverter 476, and a clear comparison result is latched at the dead end. The output of the memory 4 8 0 Figure 5 is a schematic diagram of the full micromolecular comparator. The description here is similar to the micromolecular comparator 2 of Figure 2. The difference lies in the control of EQU. In addition, the present invention can also provide the power reduction control signal PD to a device such as a micromolecular comparator 500 ^ according to the time in the fourth β diagram. According to the implementation form of the present invention, when, for example, the double-stage comparator 400 is in a bit period stage, the equalization control signal EQU and the power reduction signal? 1) Available for micromolecular comparators 405, 406, 407, and 408. The equalization control signal EQU is suitable for the equalization structure 510, which will cause a voltage to be generated at the node 5200: a voltage Vb will be generated at the node 530. After the equalization, the next comparison phase can be accelerated. According to an embodiment of the present invention, the power reduction control signal PD controls a load circuit. The power reduction control signal PD is suitable for the micromolecular comparators 405, 406, and 407 # ports 408, and the inverter comparators 462, 464, and 466 foreign ports 4 68 to reduce power consumption. The power reduction signal PD is applied to the micromolecule comparators 405, 406, 407, and 408 to power down these sub-comparators before and after the conversion sequence described above. FIG. 6 shows a schematic diagram of a single-ended grounded inverter comparator 6 0 0. For example, it may correspond to the serially connected inverse of the last micromolecular comparator 4 0 8 in the serial micromolecular comparators 405, 406, 407, and 408. One of the phase comparator sub-comparators 4 6 2 and 4 6 4. In the described embodiment, the inverter comparator 6 0 0

9818twf.ptd 第23頁 1223925 五、發明說明(19) 基本與第2圖所示反相子比較器2 〇 〇相同,區別在於反相子 比較器600還進一步含有一個由電能降低信號⑼控制的電 能降低裝置6 1 0。採用電能降低控制信號p D +降低裝置6 i 〇 的電能消耗可減輕或消除以前技術中第2圖所示反相器子 比較器2 0 0中存在的泄漏電流,所用方法是當電能降低控 制#號P D處於’’咼位狀態’'時,將輸入端接地,從而可使得 電晶體6 1 0處於”接通狀態π 。根據本發明實施形式,在添 加反相器子比較器增大增益的同時,添加電能降低裝置可 減輕或消除電流泄漏。 第7圖表示帶有賦能控制信號且具有一種簡單自身偏 壓設計的鎖存器型微分子比較器7 00 (比如對應於第4Α圖 的ItchBuff 472 )示意圖。鎖存器型微分子比較器7〇〇作 為11 c h B u f f 4 7 2添加到複級比較器4 0 0,以便消除不穩定 操作可能性,該不穩定操作可出現在高精度使用情況^, 比如當輸入電壓處於數位式反相器結構的不穩定區時的小 類比輸入信號。當採用VLS I技術時,微分子比較器4 〇 5、 406、407和408及反相器子比較器462、464、466和468模 組物理放置時它們可相距很近,這樣可假定且實際上具有 幾乎相同的公共模式電壓,而在輸出端則只放大和問^ I 分信號。第4A圖中ItchBuff 472分別接收來自反相器子比 較器4 6 4和4 6 8的輸出信號4 6 9和4 7 1,與以前技術所用^^才籌 相比,可提供額外的增益和更可靠的輸出結果。因為考虞、 到LtchBuf f 4 72賦能時間僅占第4B圖所示整個有效# & & 間的很小部分,所以添加LtchBuff 4 7 2可視為一精明的执9818twf.ptd Page 23 1223925 V. Description of the invention (19) Basically the same as the inverter comparator 200 shown in Fig. 2 except that the inverter comparator 600 further contains a signal Power reduction device 6 1 0. Using the power reduction control signal p D + to reduce the power consumption of the device 6 i 〇 can reduce or eliminate the leakage current existing in the inverter sub-comparator 200 shown in FIG. 2 of the prior art. The method used is when the power reduction control When the ## PD is in the "bit state", the input terminal is grounded, so that the transistor 6 10 can be in the "on state π". According to the implementation form of the present invention, the gain is increased by adding an inverter sub-comparator. At the same time, the addition of a power reduction device can reduce or eliminate current leakage. Figure 7 shows a latch-type micromolecular comparator 7 00 with an energized control signal and a simple self-bias design (for example, corresponding to Figure 4A). Schematic diagram of ItchBuff 472). A latch-type micromolecular comparator 700 is added as a 11ch Buff 4 7 2 to the complex comparator 4 0 0 in order to eliminate the possibility of unstable operation, which may occur in High-precision use cases ^, such as small analog input signals when the input voltage is in the unstable region of the digital inverter structure. When VLS I technology is used, the micromolecular comparators 405, 406, 407, and 408 Inverter sub-comparators 462, 464, 466, and 468 modules can be placed very close to each other when physically placed, so that it can be assumed and actually have almost the same common-mode voltage, while the output is only amplified and asked ^ I points In Figure 4A, ItchBuff 472 receives the output signals 4 6 9 and 4 7 1 from the inverter sub-comparators 4 6 4 and 4 6 8 respectively. Compared with the previous technology, it can provide additional Gain and more reliable output results. Because the time to energize to LtchBuf f 4 72 accounts for only a small part of the entire effective # & & shown in Figure 4B, adding LtchBuff 4 7 2 can be regarded as a smart Stubborn

9818twf.ptd 第 24 頁 1223925 五、發明說明(20) 計方案。 根據上述内容,對於熟悉該領域技術者,很顯然,本 發明提供了一種方法和電路,其特徵在於,在提供可靠電 壓的同時可抵消環境雜訊,消除類比數位轉換器内的輸入 直流偏移電壓,降低電能消耗。上述幾個實施形式僅作為 示例性提供,本發明並非局限於這些實施例。對於熟悉該 領域技術者,基於前面所描述的内容,在不相互矛盾的情 況下,它們可對上述實施形式進行變動和更改。另外熟悉 該領域技術者根據此處所述專利說明書内容,可進行其他 的組合、刪節、替代和更改。因此,本專利並非局限於該 專利說明書所述的幾種實施形式,而是以申請專利範圍所 界定的内容為準。9818twf.ptd Page 24 1223925 V. Description of the invention (20) Design plan. According to the above, it is obvious to those skilled in the art that the present invention provides a method and a circuit, which are characterized in that it can provide reliable voltage while offsetting environmental noise and eliminate input DC offset in the analog-to-digital converter. Voltage, reducing power consumption. The above several implementation forms are provided as examples only, and the present invention is not limited to these embodiments. For those skilled in the art, based on the content described above, they can make changes and modifications to the above implementation forms without contradicting each other. In addition, those skilled in the art may make other combinations, deletions, substitutions, and changes based on the contents of the patent specification described herein. Therefore, this patent is not limited to the several implementation forms described in the patent specification, but the content defined by the scope of the patent application shall prevail.

9818twf.ptd 第25頁 1223925 圖式簡單說明 第1 A圖表示採用以前技術消除輸入偏移電壓的比較器 電路示意圖。 第1B圖表不第1A圖中比較裔電路時間控制不意圖。 第2圖表示傳統全微分子比較器示意圖。 第3圖表示傳統單端接地反相子比較器示意圖。 第4 A圖表示根據本發明實施形式性能改善後比較器電 路不意圖。 第4B圖表示根據本發明實施形式第4A圖中比較器電路 運行控制波形示意圖。 第5圖表示根據本發明實施形式,具有節約能耗和均 衡控制功能的全微分子比較器示意圖。 第6圖表示根據本發明實施形式,具有電能降低控制 功能的單端接地反相子比較器示意圖。 第7圖表示具有賦能(enable)控制信號的鎖存器型微 分子比較器示意圖。 [圖式標示說明] 100: 比較器電路,4 0 0 :複級比較器 105 >106 、107 、108 >200 、405 、406 、407 、408 ^ 500: 子比較器, 110、 111、 115、 116、 117、 118、410、411:電路, 121 、122 > 123 、124 > 125 > 126 、421 、422 、423 、424 、 425、 426、463、 467、469、471:輸出信號, 1 62 、164、166 、168、462 、464 > 4 6 6 、468 、600:反相器9818twf.ptd Page 25 1223925 Brief description of the diagram Figure 1 A shows the comparator circuit diagram using the previous technology to eliminate the input offset voltage. Chart 1B and Figure 1A are not intended to control the timing of the comparison circuit. Figure 2 shows a schematic diagram of a conventional all-micromolecular comparator. Figure 3 shows a conventional single-ended grounded inverter comparator. Fig. 4A shows that the comparator circuit is not intended after the performance is improved according to the embodiment of the present invention. Fig. 4B is a schematic diagram showing the operation control waveform of the comparator circuit in Fig. 4A according to the embodiment of the present invention. Fig. 5 shows a schematic diagram of an all-micromolecule comparator with functions of saving energy consumption and balancing control according to an embodiment of the present invention. Fig. 6 shows a schematic diagram of a single-ended grounded inverter comparator with a power reduction control function according to an embodiment of the present invention. Fig. 7 shows a schematic diagram of a latch type micromolecular comparator having an enable control signal. [Schematic description] 100: Comparator circuit, 4 0 0: Multiple comparator 105 > 106, 107, 108 > 200, 405, 406, 407, 408 ^ 500: Sub-comparator, 110, 111, 115, 116, 117, 118, 410, 411: circuits, 121, 122 > 123, 124 > 125 > 126, 421, 422, 423, 424, 425, 426, 463, 467, 469, 471: output Signal, 1 62, 164, 166, 168, 462, 464 > 4 6 6, 468, 600: inverter

9818twf.ptd 第26頁 1223925 圖式簡單說明 子比較器, 173,174,175,176:通用數位反相器, 1 8 0、4 8 0 ·.鎖存器, 201 、202 、203 、205 、206 、310 、320 、610:電晶體, 472、7 0 0:鎖存器型微分子比較器(ItchBuff), 474、476:反相器, 51 0 :均衡結構(裝置), 520、530、人、8、¥1111'-、¥111丁+:節點,600:電能降低 結構 EN··賦能(enable)控制信號, EQU、EQU+、EQU-:均衡控制信號,PD :電能降低控制信 寒 號, IN-、IN+、301:輸入信號, LTCH :鎖存器信號,OUT+、OUT -:輸出信號, PVin+、Pvin-、Pda+、Pda-:控制信號,9818twf.ptd Page 26 1223925 Schematic description of the sub-comparator, 173, 174, 175, 176: general-purpose digital inverter, 1 8 0, 4 8 0 ·. Latch, 201, 202, 203, 205, 206, 310, 320, 610: transistors, 472, 7 0: latch-type micromolecular comparator (ItchBuff), 474, 476: inverter, 51 0: equalization structure (device), 520, 530, Person, 8, ¥ 1111'-, ¥ 111 Ding +: node, 600: power reduction structure EN ·· enable control signal, EQU, EQU +, EQU-: equalization control signal, PD: power reduction control signal No., IN-, IN +, 301: input signals, LTCH: latch signals, OUT +, OUT-: output signals, PVin +, Pvin-, Pda +, Pda-: control signals,

Vcm:共同電壓,Vda+、Vda-:電麼參照信號, V i η -、V i η + :電壓輸入信號(類比信號),Vcm: common voltage, Vda +, Vda-: electric reference signal, V i η-, V i η +: voltage input signal (analog signal),

VinX-、VinX+:輸入信號(電壓),VinX-, VinX +: input signal (voltage),

Rl 、R2 、R3 、R4 、R5 、R6:開關, △ Τ1、ΔΤ2、ΔΤ3:時間延遲。Rl, R2, R3, R4, R5, R6: switches, ΔΤ1, ΔΤ2, ΔΤ3: time delay.

9818twf.ptd 第27頁9818twf.ptd Page 27

Claims (1)

1223925 六、申請專利範圍 1. 一種比較器電路,應用於比較一第一和一第二輸入 信號,其特徵在於該比較器電路包括: 複數個串聯的全微分子比較器; 複數個反相器子比較器,連接到該些全微分子比較 m · , 複數個反相器,連接到該些反相器子比較器;以及 複數個電能降低控制信號線路,連接到該些全微分子 比較器和該些反相器子比較器中的至少一個子比較器。 2 .如申請專利範圍第1項所述的比較器電路,其特徵 在於: 該比較器電路進一步包括一鎖存器型微分子比較器, 連接到該些反相器子比較器;以及 該些反相器是透過該鎖存器型微分子比較器連接到該 些反相器子比較器。 3 .如申請專利範圍第2項所述的比較器電路,其特徵 在於,該比較器電路進一步包括複數個均衡控制信號線 路,連接到該些全微分子比較器。 4 .如申請專利範圍第1項所述的比較器電路,其特徵 在於,該比較器電路進一步包括複數個均衡控制信號線 路,連接到該些全微分子比較器。 5 .如申請專利範圍第4項所述的比較器電路,其特徵 在於,該些電能降低控制信號線路連接到該些全微分子比 較器和該些反相器子比較器。 6 ·如申請專利範圍第4項所述的比較器電路,其特徵1223925 VI. Patent application scope 1. A comparator circuit for comparing a first and a second input signal, characterized in that the comparator circuit includes: a plurality of all-micromolecule comparators connected in series; a plurality of inverters A sub-comparator connected to the all-micromolecule comparison m ·, a plurality of inverters connected to the inverter sub-comparators; and a plurality of power reduction control signal lines connected to the all-micromolecule comparators And at least one of the inverter sub-comparators. 2. The comparator circuit according to item 1 of the scope of patent application, characterized in that: the comparator circuit further comprises a latch-type micromolecule comparator connected to the inverter sub-comparators; and The inverter is connected to the inverter sub-comparators through the latch-type micromolecular comparator. 3. The comparator circuit according to item 2 of the scope of patent application, wherein the comparator circuit further comprises a plurality of equalization control signal lines connected to the all-micromolecule comparators. 4. The comparator circuit according to item 1 of the patent application scope, characterized in that the comparator circuit further comprises a plurality of equalization control signal lines connected to the all-micromolecule comparators. 5. The comparator circuit according to item 4 of the scope of patent application, wherein the power reduction control signal lines are connected to the all-micromolecule comparators and the inverter sub-comparators. 6 · The comparator circuit as described in item 4 of the patent application scope, its characteristics 9818twf.ptd 第28頁 1223925 六、申請專利範圍 在於,進一步包括: 一電能降低控制信號源;以及 一均衡控制信號源。 7.如申請專利範圍第1項所述的比較器電路,其特徵 在於,包括4個串聯在一起的全微分子比較器。 8 .如申請專利範圍第1項所述的比較器電路,其特徵 在於,該些全微分子比較器為非再生型子比較器。 9 .如申請專利範圍第8項所述的比較器電路,其特徵 在於,包括2個反相器子比較器。 1 0 .如申請專利範圍第4項所述的比較器電路,其特徵 在於,至少一該均衡控制信號線路運行,以取消在至少一 該全微分子比較器上的偏移電壓。 1 1.如申請專利範圍第1〇項所述的比較器電路,其特 徵在於,在位元週期階段之前,一電能降低控制信號透過 至少一該電能降低控制信號線路,更改至少一該全微分子 比較器的狀態。 1 2.如申請專利範圍第1項所述的比較器電路,其特徵 在於,電能降低控制信號是透過至少一該電能降低控制信 號線路消除至少一該反相器子比較器内的電流泄漏。 1 3.如申請專利範圍第4項所述的比較器電路,其特徵 在於,至少一該均衡控制信號線路運行以控制該比較器電 路内的一載入電路。 14· 一種比較器電路,應用於比較一第一和一第二輸 入信號,其特徵在於,該比較器電路包括:9818twf.ptd Page 28 1223925 6. The scope of patent application is that it further includes: a power reduction control signal source; and an equalization control signal source. 7. The comparator circuit according to item 1 of the scope of patent application, characterized in that it comprises 4 all-micromolecule comparators connected in series. 8. The comparator circuit according to item 1 of the scope of patent application, wherein the all-micromolecule comparators are non-regenerative sub-comparators. 9. The comparator circuit according to item 8 of the scope of patent application, characterized in that it comprises two inverter sub-comparators. 10. The comparator circuit according to item 4 of the scope of patent application, characterized in that at least one of the equalization control signal lines is operated to cancel the offset voltage on at least one of the all-micromolecule comparators. 1 1. The comparator circuit according to item 10 of the scope of patent application, characterized in that before the bit period phase, a power reduction control signal passes through at least one power reduction control signal line to change at least one all-micro State of the molecular comparator. 1 2. The comparator circuit according to item 1 of the scope of patent application, wherein the power reduction control signal eliminates current leakage in at least one inverter sub-comparator through at least one power reduction control signal line. 1 3. The comparator circuit according to item 4 of the scope of patent application, characterized in that at least one of the equalization control signal lines operates to control a load circuit in the comparator circuit. 14. A comparator circuit for comparing a first and a second input signal, characterized in that the comparator circuit includes: 9818twf.ptd 第29頁 1223925 六、申請專利範圍 複數個串聯的全微分子比較器; 複數個反相器子比較器,連接到該些全微分子比較 器;以及 一鎖存器型全微分子比較器,連接到該些反相器子比 較器。 1 5 .如申請專利範圍第1 4項所述的比較器電路,其特 徵在於,進一步包括: 複數個反相器,連接到該鎖存器型微分子比較器;以 及 一鎖存器,連接到該些反相器。 1 6 .如申請專利範圍第1 4項所述的比較器電路,其特 徵在於,進一步包括複數個電能降低控制信號線路,連接 到該些微分子比較器和該些反相器子比較器中至少一個子 比較器。 1 7 ·如申請專利範圍第1 6項所述的比較器電路,其特 徵在於,該些電能降低控制信號線路連接到該些全微分子 比較器和該些反相器子比較器。 1 8 .如申請專利範圍第1 7項所述的比較器電路,其特 徵在於,進一步包括複數個均衡控制信號線路,連接到該 些全微分子比較器。 1 9 ·如申請專利範圍第1 6項所述的比較器電路,其特 徵在於,進一步包括: 複數個均衡控制信號線路,連接到該些全微分子比較 器;以及9818twf.ptd Page 29 1223925 VI. Patent application range: A plurality of all-micromolecule comparators connected in series; a plurality of inverter sub-comparators connected to the all-micromolecule comparators; and a latch-type all-micromolecule Comparators connected to the inverter sub-comparators. 15. The comparator circuit according to item 14 of the scope of patent application, further comprising: a plurality of inverters connected to the latch-type micromolecular comparator; and a latch connected to To the inverters. 16. The comparator circuit according to item 14 of the scope of patent application, further comprising a plurality of power reduction control signal lines connected to at least the micromolecule comparators and the inverter sub-comparators. A sub-comparator. 17 The comparator circuit according to item 16 of the scope of patent application, characterized in that the power reduction control signal lines are connected to the all-micromolecule comparators and the inverter sub-comparators. 18. The comparator circuit according to item 17 of the scope of patent application, further comprising a plurality of equalization control signal lines connected to the all-micromolecule comparators. 19 The comparator circuit according to item 16 of the scope of patent application, further comprising: a plurality of equalization control signal lines connected to the all-micromolecule comparators; and 9818twf.ptd 第30頁 1223925 六、申請專利範圍 一電能降低控制信號源和一均衡控制信號源。 2 0 · —種使用比較器比較輸入信號的方法,其特徵在 於,該方法包括: 取樣輸入信號,並保持被取樣之該輸入信號,用以比 較該輸入信號與一電壓參照信號; 利用一均衡控制信號以均衡該比較器内的一偏移電 壓; 利用一電能降低控制信號,在信號取樣階段和比較階 段之間的一段時間減小或消除供給到該比較器之至少一元 件的電能;以及9818twf.ptd Page 30 1223925 6. Scope of Patent Application A power reduction control signal source and an equalization control signal source. 2 0 — A method of comparing input signals using a comparator, characterized in that the method includes: sampling an input signal and holding the sampled input signal to compare the input signal with a voltage reference signal; using an equalization Controlling the signal to equalize an offset voltage in the comparator; reducing the control signal with an electrical energy to reduce or eliminate the electrical energy supplied to at least one element of the comparator during a period between the signal sampling phase and the comparison phase; and 提供一個鎖存器,以在該鎖存器被觸發時維持一輸出 電壓。. * 2 1 ·如申請專利範圍第2 〇項所述的使用比較器比較輸 入信號的方法,其特徵在於,該均衡控制信號在 1 時,處於高位狀態。 % m U奴 2 2 ·如申請專利範圍第2 〇項所述的使用比較器 入化唬的方法,其特徵在於,該均衡控制信號在 f n] 的至少部分時間中,變更到低位狀態。 父A latch is provided to maintain an output voltage when the latch is triggered. * 2 1 · The method for comparing input signals using a comparator as described in item 20 of the scope of patent application, characterized in that, when the equalization control signal is 1, it is in a high state. % M 奴奴 2 2 · The method of using a comparator as described in item 20 of the scope of patent application, wherein the equalization control signal is changed to a low state for at least part of the time of f n]. father 2 3 ·如申請專利範圍第2 〇項所述的使用比 入信號的方法,其特徵在於,更包括一賦能控1比較輪 用於該鎖存器’在觸發該鎖存器之後延遲—段 後’該賦能控制信號移向高位狀態以賦能該 =、間- 促使該鎖存器電能降低之該賦能控制信號之:y 遲一段預定時間之後,反轉換成低位狀態。轉換之後)2 3 · The method for using a ratio input signal as described in item 20 of the scope of patent application, further comprising an enable control 1 comparison wheel for the latch 'delayed after the latch is triggered— After the segment, the enabling control signal is shifted to a high state to enable the =, and the-of the enabling control signal to reduce the latch power: y is reversed to a low state after a predetermined time. After conversion) 1223925 六、申請專利範圍 2 4.如申請專利範圍第2 0項所述的使用比較器比較輸 入信號的方法,其特徵在於,該電能降低控制信號移向一 預定狀態以關閉該比較器之至少一部分的運行,以節約電 能。 2 5 .如申請專利範圍第2 0項所述的使用比較器比較輸 入信號的方法,其特徵在於,該鎖存器包括一下降沿觸發 鎖存器,在取樣階段時維持於高位狀態。 2 6 .如申請專利範圍第2 0項所述的使用比較器比較輸 入信號的方法,其特徵在於,更包括一賦能控制信號,應 用於該鎖存器,在取樣階段時,該賦能控制信號是處於低 位狀態,以使該鎖存器維持於一電能降低模式;在該鎖存 器的觸發之前,該賦能控制信號是移向高位狀態以賦能該 鎖存器,且在該鎖存器之觸發之後,經過一段預定延遲時 間,該賦能控制信號又移回到低位狀態,再降低該鎖存器 之電能。 2 7.如申請專利範圍第2 6項所述的使用比較器比較輸 入信號的方法,其特徵在於,在取樣階段和位元週期階段 之間,該電能降低控制信號關閉該比較器之至少一部分。 2 8 ·如申請專利範圍第2 0項所述的使用比較器比較輸 入信號的方法,其特徵在於,該電能降低控制信號是用於 減輕或消除該比較器内的泄漏電流。1223925 6. Application for patent scope 2 4. The method for comparing input signals using a comparator as described in item 20 of the scope of patent application, wherein the power reduction control signal is moved to a predetermined state to close at least at least the comparator Part of the operation to save electricity. 25. The method for comparing input signals using a comparator as described in item 20 of the scope of the patent application, wherein the latch includes a falling edge triggered latch that is maintained in a high state during the sampling phase. 2 6. The method for comparing input signals using a comparator as described in item 20 of the scope of patent application, further comprising an enable control signal, which is applied to the latch. During the sampling phase, the enable The control signal is in a low state to maintain the latch in a power-down mode; before the latch is triggered, the enable control signal is moved to a high state to enable the latch, and in the After the latch is triggered, after a predetermined delay time, the enable control signal is moved back to the low state, and the power of the latch is reduced. 2 7. The method for comparing input signals using a comparator as described in item 26 of the scope of patent application, characterized in that, between the sampling phase and the bit period phase, the power reduction control signal turns off at least a part of the comparator . 28. The method for comparing input signals using a comparator as described in item 20 of the scope of the patent application, wherein the power reduction control signal is used to reduce or eliminate a leakage current in the comparator. 9818twf.ptd 第32頁9818twf.ptd Page 32
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