TWI223391B - Semiconductor device manufacturing method and electronic equipment using same - Google Patents

Semiconductor device manufacturing method and electronic equipment using same Download PDF

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TWI223391B
TWI223391B TW092107728A TW92107728A TWI223391B TW I223391 B TWI223391 B TW I223391B TW 092107728 A TW092107728 A TW 092107728A TW 92107728 A TW92107728 A TW 92107728A TW I223391 B TWI223391 B TW I223391B
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semiconductor device
support plate
electrode
manufacturing
substrate
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TW092107728A
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Chinese (zh)
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TW200401400A (en
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Yoshihiko Nemoto
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors

Abstract

A method of manufacturing semiconductor devices includes the following steps. That is, a support board is adhered to a rear surface of a substrate proper which has a plurality of circuit element parts with prescribed functions formed on a circuit forming plane on an obverse surface thereof. First groove portions are formed in the substrate proper. An insulating film (17) is formed on a surface of a semiconductor substrate (50) by using an insulating material, and holes are formed in the first groove portions. Metal wiring patterns (8) are formed which extend from electrode portions to at least parts of inner walls of the holes. A prescribed amount of the support board at a bottom of each of the holes is removed. A conductive material is filled into the holes thereby to form penetration electrodes (10). A second groove portions are formed in the first groove portions.

Description

1223391 玖、發明說明 【發明所屬之技術領域】 本發明係關於具有能從基板本體表面的電路形成面到 達背面之貫穿電極的半導體裝置之製造方法、該半導體裝 置以及組裝有該半導體裝置的電子機器。 【先前技術】 圖63(a)〜圖63(g)分別爲顯示具有貫穿電極的先前半導 體裝置的各製造步驟之剖面圖。 以下，係根據圖說明該半導體裝置的製造順序。 首先，如圖63(a)所示，製造基板本體201，配置有多數 個在表面電路形成面上具有規定功能的電路元件部202。 接著，如圖6 3 (b )所示，從矽晶圓所構成的基板本體2 0 1 表面上，形成多個很接近100//m但是不到100/zm的孔洞 2 03 ° 其次，在孔洞203內壁面上形成絕緣膜，之後在絕緣膜 上沉積作爲電鍍陰極的金屬膜。然後，以其爲陰極如圖62(c) 所示以金屬塡入孔洞203內部而形成貫穿電極204。 接下來，如圖63(d)所示，切削基板本體201背面直到 貫穿電極204的端面露出爲止，或如圖62(e)所示，將基板 本體20 1的背面作選擇性的蝕刻。 其次，以化學氣相沉積（CVD)法，如圖62(f)所示，在基 板本體201背面沉積由Si02構成的絕緣膜205。 之後，用光微影法將絕緣膜205的貫穿電極204部分以 蝕刻去除，藉以製造如圖63(g)所示貫穿電極204貫穿過 6 312/發明說明書(補件)/92-06/92107728 1223391 基板本體20 1的半導體裝置集合體’最後將該半導體裝置 集合體分割成多個即成半導體裝置。 【發明內容】 (發明所欲解決之問題） 在上述具有貫穿電極2 04的半導體裝置之製造方法當 中，在形成貫穿電極之前’先行蝕刻加工，但是在使用該 蝕刻加工的時候，能夠做溝槽蝕刻加工的孔洞203深度最 多是100 // m左右，因此在如圖63(d)所示切削基板本體201 背面使得貫穿電極204的端面露出時’不得不使得基板本 體20 1板半身的厚度變得非常薄。 在如此的狀態下，後段步驟中，如圖63(e)〜圖63(g)所 示，還有基板本體2 0 1背面的蝕刻處理步驟、蝕刻處理後 的絕緣膜205形成步驟、光微影進行的貫穿電極2〇4部分 的絕緣膜2 0 5的蝕刻去除步驟等，若基板本體2 0 1厚度太 薄，在上述操作處理時很容易造成破損，因此形成半導體 裝置製品良率不高的問題。 本發明，係以解決該問題爲課題，其目的在於’減少半 成品在操作過程中的破損，使得具有貫穿電極的半導體裝 置良率提高，並且可輕易製造的半導體裝置’以及其製造 方法。 此外，另一目的在於：組裝有以該製造方法所得的半導 體裝置在內的電子機器。 (解決問題之手段） 本發明的半導體裝置之製造方法，包含下述步驟：在基 7 312/發明說明書(補件)/92-06/92107728 1223391 板本體的背面貼上支撐板，該基板本體在表面的電路形成 面上形成多個具有所規定功能的電路元件部；至少在前述 基板本體的電路元件部的週邊部或者電路元件部內的所規 定部分的其中之一上，形成能到達前述支撐板上的第一溝 部；採用絕緣材料，在前述第一溝部上形成能使支撐板從 該底部露出的孔洞；形成金屬配線圖案，該金屬圖案由形 成在前述電路元件部上的電極部到達前述孔洞的至少一部 分內壁上；將前述孔洞底面去除所規定量；將導電材料埋 設入於前述孔洞內而形成貫穿電極，使其得以由前述電路 形成面突出。在前述電路元件部週邊部形成能到達前述支 撐板的第二溝部；以及去除前述支撐板，藉以分離成多個 半導體裝置。 此外，本發明的半導體裝置之製造方法，係在電路元件 部的週邊部形成第一溝部，而在第一溝部內形成第二溝部。 本發明的半導體裝置之製造方法中，係在將支撐板貼在 基板本體上之前，先將基板本體的背面去除所規定的量。 本發明的半導體裝置之製造方法中，係以切片鋸 (dicingsaw)來形成第一溝部。 本發明的半導體裝置之製造方法中，係以反應性離子蝕 刻（reactive ion etching system)來形成第一溝部。 本發明的半導體裝置之製造方法中，在使用絕緣材料在 第一溝部形成到達支撐板上的孔洞時，也同時在半導體基 板表面形成絕緣膜。 本發明的半導體裝置之製造方法中，係以感光性玻璃或 8 312/發明說明書(補件)/92-06/92107728 1223391 者聚醯亞胺樹脂作爲絕緣材料，而由以光微影法 (photolithography )來形成孔洞。 本發明的半導體裝置之製造方法中，係以切片鋸來形成 第二溝部。 本發明的半導體裝置之製造方法中，係將直徑大約3〜 3 Onm的金屬粒子分散於以介面活性劑所覆蓋的溶液中的 獨立分散超細微粒子，旋轉塗敷使其覆蓋在半導體基板表 面以及第一溝部以及形成在第一溝部上的孔洞內部，在燒 成以後，將燒成部分消除一部分而在孔洞內部形成埋設的 金屬部分。 本發明的半導體裝置之製造方法中，孔洞內的導電性材 料埋設，係將氣體環境內的蒸鍍法所產生的金屬超細微粒 子，放置在減壓室內的台上的半導體基板上，以朝向孔洞 的噴嘴吹出的氣體沉積法來進行。 本發明的半導體裝置之製造方法中，支撐板係爲金屬 板，孔洞底面去除所規定量的步驟係以腐蝕液體的蝕刻來 進行。 本發明的半導體裝置之製造方法中，將金屬埋設孔洞內 的步驟，係以支撐板爲陰極的電鍍進行。 本發明的半導體裝置之製造方法，係包含下述步驟：在 基板本體的背面貼上支撐板，該基板本體在表面的電路形 成面上形成多個具有所規定功能的電路元件部；在前述基 板本體上形成能到達前述第一支撐板的第一溝部；用絕緣 材料，在前述第一溝部上形成能使支撐板從該底部露出的 9 312/發明說明書(補件)/92-06/92107728 1223391 孔洞；由形成在前述電路元件部上的電極部到達前述孔洞 的至少一部分內壁上的金屬配線圖案的形成步驟；將前述 孔洞底面去除所規定量；在前述孔洞內埋設入導電性材料 形成貫穿電極，使其能由前述電路形成面突出；在前述電 路元件部週邊部，形成能到達前述支撐板的第二溝部；在 前述半導體基板的電路形成面側貼上第二支撐板；去除前 述第一支撐板；以探針接觸前述貫穿電極以檢查電路元件 部的電路功能；以及去除第二支撐板，藉以分離成多個半 導體裝置。 本發明的半導體裝置之製造方法中，係在電路元件部週 邊部形成第一溝部，在第一溝部內部形成第二溝部。 本發明的半導體裝置之製造方法中，係將孔洞底面去除 所規定量之後，形成從電極部到達前述孔洞底面的金屬配 線圖案。 本發明的半導體裝置之製造方法中，係在電路元件部間 的第一溝部內沿著第一溝部形成兩列並列的孔洞，在該兩 列孔洞之間形成第二溝部。 本發明的半導體裝置之製造方法中，係在電路元件部間 分別形成兩列延伸的第一溝部，在各第一溝部內形成一列 排列的孔洞，在兩列延伸的第一溝部之間形成第二溝部。 本發明的半導體裝置之製造方法中，係以陽極結合將支 撐板貼在半導體基·板背面上。 本發明的半導體裝置之製造方法中，基板本體背面和支 撐板之間係以接著材料黏接，黏接後使其硬化而成爲絕緣 10 312/發明說明書(補件)/92-06/92107728 1223391 層’在去除支撐板之後仍殘留在半導體基板背面上。 本發明的半導體裝置之製造方法中，在將支撐板貼於半 導體基板背面之前，先在半導體基板背面形成氧化膜。 本發明的半導體裝置之製造方法，係在電路元件部內部 設置第一溝部。 本發明的半導體裝置之製造方法，係包含下述步驟：在 支撐板上形成孔洞部；在該孔洞部塡入電極材料以形成第 一突起電極；形成第一金屬配線圖案以使第一突起電極和 前述支撐板上所規定位置連接；用接著材料將基板本體的 背面貼在上述支撐板上，該基板本體在表面的電路形成面 上形成多個具有所規定功能的電路元件部；在電路元件部 間的基板本體區域中，形成第一溝部，使其能到達以前述 第一金屬配線圖案前面的前述接著材料所形成的絕緣層； 用絕緣材料，在前述半導體基板表面上，去除前述電路元 件部的電極部以形成絕緣膜，並在前述第一溝部形成能到 達支撐板的孔洞；形成第二金屬配線圖案，使電極部到達 前述孔洞的至少一部分內壁；去除前述孔洞底面的絕緣 層，使第一金屬配線圖案露出的步驟；在前述孔洞中埋設 金屬以形成貫穿電極；在前述第二金屬配線圖案的所規定 位置上設置第二突起電極；設置沿前述第一溝部到達前述 支撐板的第二溝部，分割成多個半導體基板；以及去除支 撐板。 本發明的半導體裝置之製造方法中，消除了在支撐板形 成孔洞部，在該孔洞部中塡入電極材料形成第一突起電極 11 312/發明說明書(補件)/92-06/92107728 1223391 的步驟、或者在前述第二金屬配線圖案的所規定位置設置 第二突起電極的步驟。 本發明的半導體裝置之製造方法中，去除孔洞底面的絕 緣層而使得第一金屬配線圖案露出後，形成第二金屬配線 圖案，從電極部通過前述孔洞和第一金屬配線圖案連接。 本發明的半導體裝置之製造方法中，係包含在電路形成 面上形成突起電極的步驟。 本發明的半導體裝置之製造方法中，包含在背面形成突 起電極的步驟。 本發明的半導體裝置之製造方法，係包含下述步驟：在 表面的電路形成面上，形成具有所規定功能的電路元件 部，將前述基板本體的背面硏磨成所規定的厚度；將在支 撐板基材表面以中間膜和絕緣膜的順序形成的支撐板的絕 緣膜，和硏磨過的前述基板本體的背面結合；形成由前述 電路形成面到達前述支撐板基材的孔洞，形成貫穿孔洞內 側壁的絕緣膜；在前述孔洞內埋設導電性材料以形成前述 貫穿電極；硏磨到前述中間膜露出爲止，而使前述貫穿電 極的端部突出；以及以蝕刻去除前述中間膜使得前述絕緣 膜露出。 本發明的半導體裝置之製造方法，係包含下述步驟：在 表面的電路形成面上，形成具有所規定功能的電路元件 部，將前述基板本體的背面削去而成所規定的厚度；將削 去後的前述基板本體的背面，接合在支撐板基材表面形成 有絕緣膜的支撐板的絕緣膜上；形成由前述電路形成面到 12 312/發明說明書(補件)/92-06/92107728 1223391 達前述支撐板基材的孔洞，形成貫穿孔洞內側壁的絕緣 膜；在前述孔洞內埋設導電性材料以形成前述貫穿電極； 硏磨到前述中間膜露出爲止而使得前述貫穿電極的端部突 出；以及將前述中間膜蝕刻去除而使前述絕緣膜露出。 本發明的半導體裝置之製造方法，係包含下述步驟：在 表面的電路形成面上，形成具有所規定功能的電路元件 部，將前述基板本體的背面削去而成所規定的厚度；將削 去後的前述基板本體的背面，接合在支撐板基材表面形成 有絕緣膜的支撐板的絕緣膜上；形成由前述電路形成面到 達前述支撐板基材的孔洞，形成貫穿孔洞內側壁的絕緣 膜；在前述孔洞內埋設導電性材料以形成前述貫穿電極； 以及使前述支撐板基材突出於前述貫穿電極的端部，並且 留下前述絕緣膜。 本發明的半導體裝置之製造方法，係包含下述步驟：將 具有作爲絕緣膜的埋設氧化膜的前述基板本體的背面削去 而成所規定的厚度；將削去後的前述基板本體的背面，接 合在支撐板基材表面上；使前述接著劑硬化而形成絕緣 膜；形成由前述基板本體的表面能到達前述支撐板基材的 孔洞，並在前述孔洞內埋設導電性材料以形成前述貫穿電 極；使前述支撐板基材突出於前述貫穿電極的端部，並且 將前述絕緣膜留下的去除步驟；以及使得前述貫穿電極的 端部從前述支撐板基材上突出’並且留下前述絕緣膜的去 除步驟。 本發明的半導體裝置之製造方法，係包含下述步驟：將 13 312/發明說明書(補件)/92-06/92107728 1223391 具有作爲絕緣膜的埋設氧化膜的前述基板本體的背面削去 而成所規定的厚度；將削去後的前述基板本體的背面，接 合在支撐板基材表面上；形成由前述基板本體的表面能到 達前述支撐板基材的孔洞的步驟；在前述孔洞內埋設導電 性材料以形成前述貫穿電極；以及使前述支撐板基材突出 於前述貫穿電極的端部，並且將前述絕緣膜留下的去除步 驟。 本發明的半導體裝置之製造方法，係包含下述步驟：將 具有作爲絕緣膜的埋設氧化膜的前述基板本體的背面削去 而成所規定的厚度；形成由前述基板本體表面超越前述埋 設氧化膜的孔洞；在前述孔洞內埋設導電性材料以形成前 述貫穿電極；以及使前述貫穿電極的端部突出於前述基板 本體背面，並且使前述埋設氧化膜露出的去除步驟。 本發明的半導體裝置之製造方法中，基板本體係以S 01 晶圓構成。 本發明的半導體裝置之製造方法中，基板本體係以極薄 的半導體層貼合在絕緣基板上的貼合型S 01晶圓所構成。 本發明的半導體裝置之製造方法中，基板本體係TFT基 板。 本發明的半導體裝置之製造方法中，支撐板基材係以金 屬構成，而用支撐板基材爲陰極進行電鍍而形成貫穿電極。 本發明的半導體裝置之製造方法中，在支撐板基材表面 上沉積金屬的中間膜而形成支撐板，以前述中間膜爲陰極 用電鍍形成貫穿電極。 14 312/發明說明書(補件)/92-06/92107728 ^391 本發明的半導體裝置之製造方法中，支撐基板，在將貫 穿電極的端面平坦化削去之後以蝕刻消除。 本發明的半導體裝置之製造方法中，在貫穿電極快要露 出之前停止硏削，之後以蝕刻法削去直到達絕緣膜爲止。 本發明的半導體裝置之製造方法中，支撐板基材，可以 蝕刻消除。 本發明的半導體裝置之製造方法中，接合係爲陽極接 合。 本發明的半導體裝置之製造方法中，接著劑係爲聚醯亞 胺樹脂。 本發明的半導體裝置之製造方法中，支撐板基材係以矽 晶圓構成，中間膜以鋁構成，而絕緣膜以氧化矽膜構成。 本發明的半導體裝置之製造方法中，支撐板基材係以鋁 構成。 本發明的電子機器，係以多個半導體裝置互相以突起電 極連接而沉積構成。 本發明的電子機器，半導體裝置的至少其中一面上，至 少在貫穿電極或者突起電極的其中之一上載放有被動元件 的電路基板連接所構成。 本發明的電子機器，半導體裝置的兩面，至少由連接於 貫穿電極或突起電極的其中之一的第一電路基板和第二電 路基板所夾住構成。 本發明的電子機器，係將半導體裝置埋入電路基板的板 芯中，形成在電路基板兩面上的配線至少連接於貫穿電極 15 312/發明說明書(補件)/92-06/92107728 1223391 或突起電極的其中之一而構成。 本發明的半導體裝置，在構成所定功能的電路元件部形 成在一主面上的半導體基板上，具有從電路形成面到達電 路形成面反面側的貫穿孔，沿著該貫穿孔具有導電路，具 有包圍該導電g各周圍的絕緣材料，相鄰的前述導電路之間 除了該絕緣材料之外並無其他材料介入。 本發明的半導體裝置，具備：從電路形成面上形成大致 垂直延伸貫穿之孔洞的基板本體；貫穿前述孔洞同時從前 述基板本體的兩面中至少一面上突出端部的貫穿電極；在 該貫穿電極週面上形成的貫穿絕緣膜；以及由前述基板本 體突出前述貫穿電極側的基板本體側面上和前述貫穿絕緣 膜成垂直交叉形成的絕緣膜。 本發明的半導體裝置中，從基板本體貫穿，而從基板本 體突出端部的貫穿電極之端面，係和基板本體的電路形成 面大致成平行，並且平坦的面。 【實施方式】 (實施形態1) 圖1到圖1 0係說明本發明的半導體裝置之製造方法中 的各製造步驟之圖。 以下，參照圖式說明半導體裝置1 0 0的製造順序。 首先，在基板本體1表面的電路形成面上，配置多個具 有規定功能的電路元件部2 (第一步驟）。 其次，如圖2所示，將基板本體1之電路形成面的反面 側也就是背面切削到規定的厚度爲止（第二步驟）。 312/發明說明書(補件)/92-06/92107728 16 1223391 之後’如圖3所示，在基板本體1背面貼上例如鋁等金 屬板作支撐板3 (第三步驟）。該貼上動作，係以基板本體1 爲陽極、支撐板3爲陰極而施加電場進行陽極接合而進 行。此外，在將支撐板3貼在基板本體1背面上之前，在 基板本體1背面形成氧化膜的氧化矽。半導體基板背面在 電氣方面及化學方面都很安定，而半導體裝置電氣方面的 性能和可信賴性也可提高。 其次，如圖4(a)和圖4(b)所示，在電路元件部2的區域 之外的基板本體1的區域上，以例如切片鋸來形成格子狀 的能到達第一支撐板3的第一溝部4(第四步驟）。其結果， 將基板本體1分割成多個半導體基板5 0。 接下來，如圖5(a)以及圖5(b)所示，用例如感光性聚 醯亞胺樹脂等來作絕緣材料，在半導體基板5 0的表面， 形成絕緣膜6而使其在電路元件部2上露出電極部5，並 在第一溝部4以光微影法來形成能到達支撐板3的孔洞 7。此外，也可以感光性玻璃來代替聚醯亞胺樹脂（第五步 驟）。 其次，如圖6 (a)以及圖6 (b )所示，形成金屬配線圖案8 使得來自電極部5的孔洞7至少到達內壁的一部分（第六步 驟）。 其後如圖7所示，以例.如晶圓蝕刻等方法將露出的孔洞 7底面的支撐板3去除掉規定的量（第七步驟）。 然後，如圖8所示，以例如第一支撐板3作爲陰極，以 例如銲錫之類的導電性金屬塡入孔洞7內使其從金屬配線 17 312/發明說明書(補件)/92-06/92107728 1223391 圖案8表面突出’形成貫穿電極ι〇(第八步驟）。 接著，如圖9(a)以及圖9(b)所示，沿著第一溝部4的中 心線將到達第一支撐板3的第二溝部9以例如切片鋸等來 形成格子狀（第九步驟）。 最後，如圖10(a)以及圖10(b)所示，以晶圓蝕刻去除第 一支撐板3，製造成在週邊部分具有從表面到達裡面的貫 穿電極10的多個半導體裝置1〇〇(第十步驟）。 如此所製造的半導體裝置1 0 0，係具備：在一主面上形 成電路元件部2的半導體基板5 0上，具有從電路形成面到 達該電路形成面的相反面上的孔洞7，沿著該孔洞7的導 電路，具有金屬配線圖案8和貫穿電極1 〇，環繞該導電路 8、1 〇周圍作爲絕緣材料的感光性聚醯亞胺樹脂，而相鄰 接的導電路8、1 0之間並無絕緣材料之外的物質介入。 上述實施形態的半導體裝置之製造方法，可輕易製造出 在週邊部分具有貫穿電極10的半導體裝置100。 此外，在將支撐板3貼在基板本體1上之前，因爲要先 將基板本體1背面去除規定的量，故能更輕易的形成半導 體基板5 0上的孔洞7。 而且，因爲基板本體1背面係以氧化膜的氧化矽形成， 故半導體基板50的背面在電氣方面、化學方面都很安定， 半導體裝置1 〇〇的電氣性能和可信賴性都能提昇。 另外，因爲在基板本體1背面以陽極接合來將支撐板3 貼上，故完全不需要黏接劑等其他種類的材料介入，使得 在製造過程中所受到的藥品承受性等限制更爲減少。 18 312/發明說明書(補件)/92-06/92107728 1223391 此外，因爲第一溝部4係以切片鋸形成，故能更輕易， 並且高效率的形成第一溝部4。 而且，因爲在電路元件部2間的第一溝部4內，沿著第 一溝部4形成兩列並行的孔洞7，週邊部分的貫穿電極1 〇 係以共同的第一溝部4所形成，故製造步驟更爲簡單而能 更輕易製造。 附帶說明，也可以反應性離子蝕刻來形成第一溝部 4，在本狀況中，可以形成尺寸精準度更高的第一溝部 4 〇 另外，因爲在用感光性聚醯亞胺樹脂的絕緣材料，形成 第一溝部4上到達支撐板3的孔洞7時，同時在半導體基 板1表面形成絕緣膜6，故不需要特地爲形成電路元件部2 的保護形成膜而設置其他步驟。又能比不具有感光性的絕 緣材料更省略步驟。此外，因爲第二溝部9也以切片鋸形 成，故能更簡單的和第一溝部4同樣的，有效率的形成第 二溝部9。 此外，在本實施形態中，支撐板3爲金屬板，係以使用 腐蝕液體的蝕刻法來將孔洞7底面去除規定量，故能輕易 形成從半導體裝置1 〇〇背面突出的貫穿電極。該金屬板係 爲鋁板，不但重量輕，也能降低成本。 另外，因爲也以使用腐蝕液體的蝕刻法來進行支撐板3 的去除，故也能輕易去除支撐板3。 而且，可以支撐板3作爲陰極，用電鍍來將金屬埋入孔 洞7內，故和無電解電鍍比較，可選擇的成長性更高，可 19 312/發明說明書(補件)/92-06/92107728 1223391 以僅埋入孔洞7的部分。且可以使用的材料可選擇的範圍 更大。 (實施形態2) 圖1 1到圖1 3係爲表示本發明實施形態2的半導體裝置 之製造方法的各步驟圖。 附帶說明，在本實施形態以及其他實施形態中，和圖i 到圖1 0中相同或者同等的元件、部位，都使用同樣符號加 以說明。 本實施形態的製造步驟，上述第一步驟到第九步驟都和 實施形態1相同。 在本實施形態中，在圖9(a)、圖9(b)所示的第九步驟之 後’如圖1 1所示，在半導體基板5 0的電路形成面側上使 用黏著劑1 1，至少在黏著面側上貼上第二支撐板1 2。此 外，也可貼上支撐薄片來代替第二支撐板12。. 之後’如圖1 2所示，利用濕式蝕刻去除支撐板3。 其次，將該半導體裝置1 0 0的半成品，如圖1 3所示反 轉後’以探測針1 3接觸貫穿電極1 〇來檢查電路元件部2 的電路功能。 最後，將第二支撐板1 2剝除或者以其他方法去除，即 可獲得如圖10所示的半導體裝置1〇〇。 如依照本發明實施形態的半導體裝置之製造方法，去除 第一支撐板3之後，多個半導體裝置1 00仍未個別分開， 僅僅利用第二支撐板1 2即可使得操作處理更加輕易，而能 更輕易檢查電路元件部2的功能。 20 312/發明說明書(補件)/92-06/92107728 1223391 (實施形態3) 圖1 4到圖2 1係爲表示本發明實施形態3的半導體裝置 之製造方法的各步驟圖。 在本實施形態中，在如圖1 4所示的基板本體〗背面和鋁 金屬板的第一支撐板3之間形成絕緣層1 4。該絕緣層1 4， 係爲例如形成聚醯亞胺之前的黏著材料所構成，用該黏著 材料將第一支撐板3黏接在基板本體1背面上後，將該黏 著材料加熱硬化之後形成。其他製造的各步驟，都和實施 形態1的各步驟相同，在本實施形態中，如圖2 1所示，可 獲得在半導體基板5 0背面上形成絕緣層1 4的半導體裝置 3 5 0 〇 在本實施形態中，基板本體1背面和支撐板3之間係以 黏著材料來黏接，黏接後硬化而成爲絕緣層1 4，在去除支 撐板3後仍留在半導體基板· 5 0背面，故黏著劑仍保持原狀 而在半導體裝置3 5 0形成安定的絕緣層。 (實施形態4) 、 圖22到圖28係爲表示本發明實施形態4的半導體裝置 之製造方法的各步驟圖。 本實施形態的製造步驟，到實施形態1的第三步驟爲止 的步驟，也就是將第一支撐板3貼在基板本體1背面的圖 3所示的步驟之前的步驟，都和實施形態1相同。 本實施形態中，接下來，如圖2 2所示，以例如切開法來 形成圍繞電路元件部2而到達支撐板3的第一溝部1 5。 其後，如圖2 3所示，例如用感光性聚醯亞胺樹脂作爲絕 21 312/發明說明書(補件)/92-06/92107728 料，以光微影法，在半導體基板5 0表面形成絕緣膜 1 7而使得電路元件部2的電極部5露出，也在第一溝部1 5 Φ幵彡成到達支撐板3的孔洞1 6。附帶說明，也可以感光玻 ^來取代感光性聚醯亞胺樹脂。 接著，如圖24所示，在絕緣膜1 7上形成金屬配線圖案 8 ’使其能夠到達來自電極部5的孔洞1 6內壁的至少一部 分。 接下來，如圖2 5所示，以例如濕式蝕刻法將露出的孔洞 16底面的支撐板3去除某一定量。 其後，如圖26所示，以例如銲錫等導電金屬，以例如支 撐板3作爲陰極進行電鍍，形成貫穿電極1 〇埋入孔洞1 6 並從絕緣膜1 7之表面突出。 接著，如圖2 7所示，沿著相鄰的第一溝部1 5之間的中 心線到達支撐板3的格子狀的第·二溝部9，以例如切片鋸 來形成之。 而最後，如圖2 8所示，以濕式蝕刻來去除支撐板3，即 可獲得具有從週邊部的表面到達背面的貫穿電極之半 導體裝置3 00。 如依照本實施形態，可在電路元件部2之間分別形成兩 列延伸的第一溝部1 5，各條第一溝部1 5內形成一列並列 的孔洞1 6，故和實施形態1的半導體裝置之製造方法相比 較，因爲第二溝部9形成在基板本體1上，故可以使用先 前的切斷基板本體1所用的刀刃。此外，半導體裝置300 的週邊部爲半導體基板5 0的一部份，和實施形態1至3 22 312/發明說明書(補件)/92-06/92107728 的半導體裝置1 ο ο、2 Ο 0相比較，其剛硬性更高’僅僅如此’ 即可更加保護週邊部的貫穿電極10。 (實施形態5) 圖2 9到圖4 0係爲表示本發明實施形態5的半導體裝置 之製造方法的各步驟圖。 在本實施形態中，首先，如圖2 9所示’在鋁金屬板的支 撐板20上形成穴部21。 其次，如圖3 0所示，在該穴部2 1內塡入電極材料以形 成第一突起電極23。 其後，如圖3 1所示，在支撐板2 0規定的位置上形成和 第一突起電極2 3連接的第一金屬配線圖案2 2。 接著，如圖3 2所示，用例如聚醯亞胺樹脂的黏著劑’將 如圖2所示的基板本體1黏接在第一金屬配線圖案2 2上。 該黏著劑可以加熱硬化而形成絕緣層24。 接著，如圖3 3所示，在電路元件部2之間的基板本體1 區域上，用例如切割方式形成格子狀的第一溝部25，延伸 到第一金屬配線圖案2 2前面爲止。經由所形成的第一溝部 2 5，使得基板本體1分割成多數個半導體基板5 0。 其次，如圖3 4所示，例如以感光性聚醯亞胺樹脂作爲絕 緣材料，在半導體基板5 0表面，形成絕緣膜6而使得電極 部5露出於電路元件部2上，此外在第一溝部2 5以光微影 法形成到達支撐板2 0的孔洞2 6。此外，也可以感光性玻 璃來取代感光性聚醯亞胺樹脂。 其次，如圖3 5所示，形成第二金屬配線圖案2 7使其至 23 312/發明說明書(補件)/92-06/92107728 1223391 少能到達電極部5的孔洞2 6內壁的一部分。 接著，如圖36所示，將孔洞26底面的絕緣層24去除而 使得第二金屬配線圖案27露出。 其後，如圖3 7所示，以例如銲錫等導電金屬，以例如支 撐板2 0作爲陰極進丫了電鑛’形成埋入貫穿電極3 〇埋入孔 洞2 6使其從第二金屬配線圖案2 7表面突出。 接著’如圖3 8所示，在第二金屬配線圖案27上規定的 位置設置第二突起電極28。 其次’如圖3 9所不’沿著的第一溝部2 5之間的中心線 到達支撐板2 0的格子狀的第二溝部2 9，以例如切片鋸來 形成之。 而最後，以濕式蝕刻來去除支撐板20，即可獲得設有在 表面側通過貫穿電極30而電氣連接的第一突起電極23之 半導體裝置400。 在本實施形態中，可輕易製造具有第一突起電極23以及 第二突起電極28的半導體裝置400。 (實施形態6) 圖4 1係爲表示本發明實施形態6的製造方法所製造之半 導體裝置5 00。在該半導體裝置5 00中，係將實施形態5 中的第二突起電極28消除。圖42的半導體裝置600係將 實施形態5的第一突起電極23消除後之例，圖43的半導 體裝置7〇〇則在半導體基板50的電路形成面上設第二突起 電極28，在反面上設第一突起電極23的例。 (實施形態7) 24 312/發明說明書(補件)/92-06/92107728 1223391 圖4 4係爲表示本發明實施形態7的製造方法所製造之半 導體裝置8 00的剖面圖、圖45爲圖44重要部分的擴大圖。 在本實施形態中，先將埋設有貫穿電極3 〇的孔洞26底 面上的絕緣層2 4去除，使得作爲導電路的第一金屬配線圖 案2 2露出後，形成作爲導電部的第二金屬配線圖案2 7 ’ 使得在電路形成面上一部分的電極至少能到達孔洞2 6內 壁的一部分。換句話說，和圖43所示的實施形態6之半導 體裝置700相比較，使得第一金屬配線圖案22露出的步 驟’和形成第一金屬配線圖案27的步驟順序互相調換。而 且’也沒有在孔洞2 6中埋設金屬形成貫穿電極的步驟。 此外，圖46的半導體裝置900，在電路元件部2間分別 形成兩列延伸的第一溝部1 5，在各第一溝部1 5內形成一 列排列的孔洞1 6所製造的半導體裝置9〇〇之重要部分的剖 面圖。 附帶說明，在上述各實施形態1至7的半導體裝置之製 造方法中，也可將直徑大約3〜3 Onm的金屬粒子分散於以 介面活性劑所覆蓋的溶液中的獨立分散超細微粒子，旋轉 塗敷使其覆蓋在半導體基板表面以及第一溝部上燒成以 後，將燒成部分消除一部分而使電極部露出，再在前述第 一溝部形成孔洞即可。在此情形下，廢水處理等對於環境 的影響比較小，而且因爲適用旋轉塗敷，使得半導體裝置 之製造過程中的整合性更加良好。 此外，在孔洞內埋設導電材料金屬的方法，也可以無電 解鍍金方式進行。在此情形下，埋設步驟所需的時間更短， 25 312/發明說明書(補件)/92-06/92107728 1223391 而且更爲簡便。 另外，也可使用膏狀導電劑來作孔洞內的導電性材料， 如此即可更加省略埋設的步驟。 而且，孔洞內導電性材料的埋設，也可以介面活性劑覆 蓋直徑大約3〜3 0 n m的金屬粒子，將在溶液中分散的獨立 分散超細微粒子以網板印刷燒成。 此外，孔洞內的導電性材料的埋設，也可以將氣體蒸鍍 法所產生的金屬超細微粒子，在減壓室台上的半導體基板 上，以朝向孔洞方向的噴頭吹出的氣體沉積法來進行。如 此可使得埋設步驟所需時間減少，而且減少材料浪費，對 環境的影響也減少。 另外，也可以蒸鍍金屬膜而形成在半導體基板以及第一 溝部全面上，以該金屬膜爲陰極進行電鍍，以形成孔洞中 埋設金屬後的金屬配線圖案，此時在將金屬埋設入孔洞內 電鍍時，不需要用金屬（導電體）作爲支撐板。 此外，也可在孔洞底面去除規定量之後，再形成從電極 部到達前述孔洞的金屬配線圖案。此時可以提昇電氣連接 的可信賴程度。 另外，也可以反應性離子蝕刻來形成第一溝部’也可將 突起電極設在除了半導體裝置週邊部之外的地方。 (實施形態8) 圖4 7係將實施形態1的製造方法所製造之半導體裝置 1 〇 〇多段互相連接貫穿電極1 0而沉積構成的電子機器的剖 面圖，在本實施形態中，可以獲得高度集中的高性能電子 26 312/發明說明書(補件)/92-06/92107728 1223391 機器。 (實施形態9) 圖4 8係在實施形態1的製造方法所製造之半導體裝置 1 0 0的貫穿電極1 0上，連接載放有例如晶片電容器等被 動元件3 1的小型電路基板3 2，具有整體化功能的電子 機器之圖。此時，和先前所謂的混合IC相比較更能夠小型 化。 (實施形態10) 圖4 9係在實施形態1的製造方法所製造之半導體裝置 100的貫穿電極10上，連接：表裡兩面都有電子元件35 的第一電路基板3 3、以及具有電子元件3 6的第二電路基 板3 4之電子機器之圖。此時，成爲三度空間的連接構造’ 可以獲得自由度更高、積體電路更集中化的的電子機器。 (實施形態11) 圖5 0係在實施形態1的製造方法所製造之半導體裝置 100，埋設板芯41，在貫穿電極10表裡兩面連接電路基板 40兩面的配線層42之電子機器之部分剖面圖。此時，成 爲三度空間的連接構造，可以獲得自由度更高、積體電路 更集中化的電子機器。而且更具有配線延遲減少的效果。 附帶說明，實施形態8至1 1中，每個都以實施形態1 的製造方法所製造之半導體裝置100組裝入電子機器內爲 例而加以說明，但是當然也可用實施形態1至7的製造方 法所製造之半導體裝置200、300、400、500、600、700、 8 〇 〇以及之後所述的實施形態1 2至1 8的製造方法所製造 27 312/發明說明書(補件)/92-06/92107728 1223391 之半導體裝置，自然不在話下。 (實施形態1 2 ) 圖5 1(a)到圖5 1(g)係爲表示本發明實施形態12的半導 ， 體裝置之製造方法的各步驟圖。 ^ 以下’以圖式就該半導體裝置的製造步驟加以說明。 首先’如圖51( a)所示，在表面的電路形成面上，製造基 板本體2 1 0，其配置多個具有規定功能的電路元件部2 i i。 此外’也事先預備以矽晶圓所構成的支撐板構件2 1 2(第一 步驟）。 _ 其次’如圖51(b)所示，將矽晶圓所構成的基板本體210 的電路形成面反面側也就是背面，硏磨削去一部分使其厚 度比後步驟的溝槽蝕刻步驟所形成的孔洞2 1 3深度更薄。 另一方面，在支撐板構件2 1 2表面以鋁膜等來形成中間膜 2 1 4，而且在中間膜2 1 4表面上，形成S i 0 2或者氧化鋁所 構成的絕緣膜215而製造支撐板217(第二步驟）。 其後，如圖51(c)所示，將支撐板217和硏磨後變薄的基 0 板本體2 1 0作陽極結合（第三步驟）。此時，絕緣膜2 1 5表 面上附著有稱爲PSG(Phosphosilicate Glass)或者 BSPSG(Brophosphosilicate Glass)的材料。如此一來，在絕 緣膜2 1 5中就參雜有磷或者硼，使得絕緣膜2 1 5表面更容 易誘發電荷，更容易進行陽極接合。此外，不僅在絕緣膜 表面，絕緣膜整個都可以該等材料構成。 - _1223391 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a semiconductor device having a through electrode that can pass from a circuit formation surface on a substrate body surface to a back surface, the semiconductor device, and an electronic device incorporating the semiconductor device . [Prior Art] Figs. 63 (a) to 63 (g) are cross-sectional views showing respective manufacturing steps of a conventional semiconductor device having a through electrode. Hereinafter, the manufacturing procedure of the semiconductor device will be described with reference to the drawings. First, as shown in Fig. 63 (a), a substrate body 201 is manufactured, and a plurality of circuit element portions 202 having a predetermined function on a surface circuit formation surface are arranged. Next, as shown in FIG. 6 (b), a plurality of holes close to 100 // m but less than 100 / zm are formed on the surface of the substrate body 2 0 1 composed of a silicon wafer. An insulating film is formed on the inner wall surface of the hole 203, and then a metal film as a plated cathode is deposited on the insulating film. Then, using this as a cathode, as shown in FIG. 62 (c), a metal is inserted into the hole 203 to form a through electrode 204. Next, as shown in FIG. 63 (d), the back surface of the substrate body 201 is cut until the end surface of the through electrode 204 is exposed, or as shown in FIG. 62 (e), the back surface of the substrate body 201 is selectively etched. Next, by a chemical vapor deposition (CVD) method, as shown in FIG. 62 (f), an insulating film 205 made of SiO2 is deposited on the back surface of the substrate body 201. After that, the through-electrode 204 portion of the insulating film 205 is removed by etching using a photolithography method to manufacture the through-electrode 204 as shown in FIG. 63 (g) through 6 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 Semiconductor device assembly of the substrate body 20 1 Finally, the semiconductor device assembly is divided into a plurality of ready-made semiconductor devices. [Summary of the Invention] (Problems to be Solved by the Invention) In the above-mentioned method of manufacturing a semiconductor device having a through electrode 204, an etching process is performed before forming a through electrode, but when the etching process is used, a trench can be formed. The depth of the etched hole 203 is about 100 // m at most. Therefore, when the back surface of the substrate body 201 is cut as shown in FIG. 63 (d) so that the end face of the through electrode 204 is exposed, the thickness of the substrate body 20 and the half of the board must be changed. It's very thin. In this state, as shown in the subsequent steps, as shown in FIG. 63 (e) to FIG. 63 (g), there are also an etching process step on the back of the substrate body 201, a step of forming the insulating film 205 after the etching process, and a photomicrograph. If the thickness of the substrate body 2 is too thin, it is easy to cause damage during the above-mentioned operations, so the yield of semiconductor device products is not high. The problem. The present invention is directed to solving this problem, and its object is to 'reduce the damage of semi-finished products during operation, improve the yield of semiconductor devices having through electrodes, and easily manufacture semiconductor devices', and a method for manufacturing the same. Another object is to assemble an electronic device including a semiconductor device obtained by this manufacturing method. (Means for Solving the Problem) The method for manufacturing a semiconductor device of the present invention includes the following steps: a support plate is attached to the back of the base body 7 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391, and the base plate body A plurality of circuit element portions having predetermined functions are formed on the surface of the circuit formation surface; at least one of a peripheral portion of the circuit element portion of the substrate body or a predetermined portion of the circuit element portion is formed so as to reach the support. A first groove portion on the board; an insulating material is used to form a hole in the first groove portion that enables the support plate to be exposed from the bottom; a metal wiring pattern is formed, and the metal pattern reaches the electrode portion formed on the circuit element portion At least a part of the inner wall of the hole; removing the bottom surface of the hole by a predetermined amount; embedding a conductive material in the hole to form a through electrode so that it can protrude from the circuit forming surface. Forming a second groove in the peripheral portion of the circuit element portion so as to reach the support plate; and removing the support plate to separate the semiconductor device into a plurality of semiconductor devices. In the method for manufacturing a semiconductor device according to the present invention, a first groove portion is formed in a peripheral portion of the circuit element portion, and a second groove portion is formed in the first groove portion. In the method of manufacturing a semiconductor device according to the present invention, the back surface of the substrate body is removed by a predetermined amount before the support plate is attached to the substrate body. In the method of manufacturing a semiconductor device of the present invention, a first groove is formed by a dicing saw. In the method for manufacturing a semiconductor device according to the present invention, the first groove portion is formed by a reactive ion etching system. In the method of manufacturing a semiconductor device of the present invention, when a hole is formed in the first groove portion and reaches the support plate using an insulating material, an insulating film is also formed on the surface of the semiconductor substrate. In the method for manufacturing a semiconductor device of the present invention, photosensitive glass or 8 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 or polyimide resin is used as an insulating material, and the photolithography method ( photolithography) to form holes. In the method of manufacturing a semiconductor device according to the present invention, the second groove portion is formed by a dicing saw. In the method for manufacturing a semiconductor device according to the present invention, metal particles having a diameter of about 3 to 3 Onm are dispersed in a solution covered with an interfacial active agent, and independently dispersed ultrafine particles are spin-coated to cover the surface of a semiconductor substrate and After firing, the first groove portion and the inside of the hole formed in the first groove portion are partially eliminated to form a buried metal portion inside the hole. In the method for manufacturing a semiconductor device according to the present invention, the conductive material in the hole is buried, and the metal ultrafine particles produced by the vapor deposition method in a gas environment are placed on a semiconductor substrate on a stage in a decompression chamber so as to face the semiconductor substrate. It is performed by a gas deposition method blown out by a hole nozzle. In the method of manufacturing a semiconductor device according to the present invention, the supporting plate is a metal plate, and the step of removing a predetermined amount of the bottom surface of the hole is performed by etching with an etching liquid. In the method for manufacturing a semiconductor device according to the present invention, the step of burying the metal in the hole is performed by electroplating using a support plate as a cathode. A method for manufacturing a semiconductor device according to the present invention includes the steps of: attaching a support plate to a back surface of a substrate body; the substrate body forming a plurality of circuit element portions having a predetermined function on a circuit formation surface on the surface; and the substrate A first groove portion capable of reaching the first supporting plate is formed on the body; 9 312 / Invention Specification (Supplement) / 92-06 / 92107728 is formed on the first groove portion by using an insulating material so that the supporting plate can be exposed from the bottom. 1223391 holes; a step of forming a metal wiring pattern from an electrode portion formed on the circuit element portion to at least a portion of an inner wall of the hole; removing a predetermined amount of the bottom surface of the hole; embedding a conductive material in the hole Penetrate the electrode so that it can protrude from the circuit formation surface; form a second groove portion that can reach the support plate at the peripheral portion of the circuit element portion; paste a second support plate on the circuit formation surface side of the semiconductor substrate; remove the foregoing A first support plate; contacting the aforementioned through electrode with a probe to check the circuit function of the circuit element portion; and removing the first A support plate, thereby separating into a plurality of semiconductor devices. In the method of manufacturing a semiconductor device according to the present invention, a first groove portion is formed at a peripheral portion of the circuit element portion, and a second groove portion is formed inside the first groove portion. In the method for manufacturing a semiconductor device according to the present invention, a metal wiring pattern is formed from the electrode portion to the bottom surface of the hole after removing the bottom surface of the hole by a predetermined amount. In the method of manufacturing a semiconductor device according to the present invention, two parallel holes are formed in the first groove portion between the circuit element portions along the first groove portion, and a second groove portion is formed between the two rows of holes. In the method for manufacturing a semiconductor device according to the present invention, two rows of first groove portions extending between circuit element portions are formed, a row of holes are formed in each of the first groove portions, and a first hole is formed between the first groove portions extending in two rows. Second ditch. In the method for manufacturing a semiconductor device according to the present invention, the support plate is attached to the semiconductor substrate and the rear surface of the substrate by anodic bonding. In the manufacturing method of the semiconductor device of the present invention, the back surface of the substrate body and the support plate are bonded with an adhesive material, and then they are hardened to become insulation after bonding 10 312 / Invention Manual (Supplement) / 92-06 / 92107728 1223391 The layer 'remains on the back surface of the semiconductor substrate after the support plate is removed. In the method of manufacturing a semiconductor device of the present invention, an oxide film is formed on the back surface of the semiconductor substrate before the support plate is attached to the back surface of the semiconductor substrate. In the method of manufacturing a semiconductor device according to the present invention, a first groove portion is provided inside the circuit element portion. The method for manufacturing a semiconductor device according to the present invention includes the following steps: forming a hole portion in a support plate; inserting electrode material into the hole portion to form a first protruding electrode; forming a first metal wiring pattern so that the first protruding electrode It is connected to a predetermined position on the support board; the back surface of the substrate body is attached to the support board with an adhesive material, and the substrate body forms a plurality of circuit element parts having a predetermined function on the circuit formation surface on the surface; A first groove portion is formed in the inter-substrate body region so that it can reach the insulating layer formed by the bonding material in front of the first metal wiring pattern; using the insulating material, the circuit element is removed on the surface of the semiconductor substrate Forming an insulating film and forming a hole in the first groove portion that can reach the support plate; forming a second metal wiring pattern so that the electrode portion reaches at least a part of the inner wall of the hole; removing the insulating layer on the bottom surface of the hole, A step of exposing the first metal wiring pattern; burying a metal in the aforementioned hole to form a through hole A through electrode; a second protruding electrode is provided at a predetermined position of the second metal wiring pattern; a second groove portion is provided along the first groove portion to reach the support plate, and is divided into a plurality of semiconductor substrates; and the support plate is removed. In the method of manufacturing the semiconductor device of the present invention, the formation of a hole portion in the support plate is eliminated, and the electrode material is inserted into the hole portion to form the first protruding electrode 11 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 A step, or a step of providing a second protruding electrode at a predetermined position of the second metal wiring pattern. In the method of manufacturing a semiconductor device according to the present invention, after removing the insulating layer on the bottom surface of the hole to expose the first metal wiring pattern, a second metal wiring pattern is formed, and the electrode portion is connected to the first metal wiring pattern through the hole. The method for manufacturing a semiconductor device according to the present invention includes a step of forming a bump electrode on a circuit formation surface. The method of manufacturing a semiconductor device according to the present invention includes a step of forming a bump electrode on the back surface. The method for manufacturing a semiconductor device of the present invention includes the steps of forming a circuit element portion having a predetermined function on a circuit formation surface on the surface, and honing the back surface of the substrate body to a predetermined thickness; The insulating film of the support plate formed in the order of the intermediate film and the insulating film on the surface of the substrate is combined with the back surface of the substrate body after honing; a hole is formed from the circuit formation surface to reach the substrate of the supporting plate to form a through hole An insulating film on the inner side wall; a conductive material is buried in the hole to form the through electrode; honing until the intermediate film is exposed so that the end of the through electrode protrudes; and removing the intermediate film by etching makes the insulating film Exposed. The method for manufacturing a semiconductor device according to the present invention includes the steps of forming a circuit element portion having a predetermined function on a circuit formation surface on the surface, and cutting the back surface of the substrate body to a predetermined thickness; The back surface of the substrate body after the removal is bonded to the insulating film of the supporting plate on which the insulating film is formed on the surface of the substrate of the supporting plate; the circuit forming surface is formed to 12 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 reaches the hole of the support plate base material to form an insulating film penetrating the inner side wall of the hole; burying a conductive material in the hole to form the penetrating electrode; honing until the intermediate film is exposed so that the end of the penetrating electrode protrudes And removing the intermediate film by etching to expose the insulating film. The method for manufacturing a semiconductor device according to the present invention includes the steps of forming a circuit element portion having a predetermined function on a circuit formation surface on the surface, and cutting the back surface of the substrate body to a predetermined thickness; The back surface of the substrate body after being removed is bonded to the insulating film of the support plate on which the insulating film is formed on the surface of the substrate of the support plate; a hole is formed from the circuit formation surface to reach the substrate of the support plate to form insulation penetrating the inner wall of the hole A conductive material is buried in the hole to form the through-electrode; and the support plate base material protrudes from an end of the through-electrode, leaving the insulating film. The method for manufacturing a semiconductor device according to the present invention includes the steps of: cutting the back surface of the substrate body having an embedded oxide film as an insulating film to a predetermined thickness; and cutting the back surface of the substrate body after cutting, Bonded to the surface of the substrate of the support plate; the adhesive is hardened to form an insulating film; holes are formed that can reach the substrate of the support plate from the surface of the substrate body, and a conductive material is buried in the holes to form the through electrode The step of removing the supporting plate base material from the end of the through electrode and leaving the insulating film behind; and making the end of the through electrode protrude from the supporting plate substrate and leaving the insulating film Removal steps. The method for manufacturing a semiconductor device according to the present invention includes the steps of cutting out the back surface of the substrate main body having a buried oxide film as an insulating film in 13 312 / Instruction Manual (Supplement) / 92-06 / 92107728 1223391 A predetermined thickness; bonding the back surface of the substrate body after cutting to the surface of the substrate of the support plate; forming a hole from the surface of the substrate body to the substrate of the support plate; embedding conductive in the hole And a removal step of making the support plate substrate protrude from an end of the through electrode and leaving the insulating film behind. A method for manufacturing a semiconductor device according to the present invention includes the steps of: cutting a back surface of the substrate body having a buried oxide film as an insulating film to a predetermined thickness; and forming a surface of the substrate body beyond the buried oxide film A step of removing a conductive material embedded in the hole to form the penetrating electrode, and exposing an end portion of the penetrating electrode to the back surface of the substrate body, and exposing the buried oxide film. In the method for manufacturing a semiconductor device of the present invention, the substrate system is constituted by an S 01 wafer. In the method for manufacturing a semiconductor device according to the present invention, the substrate system is composed of a bonded S 01 wafer with an extremely thin semiconductor layer bonded to an insulating substrate. In the method of manufacturing a semiconductor device according to the present invention, the substrate is a TFT substrate. In the method for manufacturing a semiconductor device according to the present invention, the support plate base material is made of metal, and the support plate base material is used as a cathode for electroplating to form a through electrode. In the method of manufacturing a semiconductor device according to the present invention, a metal intermediate film is deposited on the surface of the substrate of the support plate to form a support plate, and the through film is formed by electroplating using the intermediate film as a cathode. 14 312 / Invention Specification (Supplement) / 92-06 / 92107728 ^ 391 In the method for manufacturing a semiconductor device of the present invention, the support substrate is flattened and cut off by the end surface through the electrode, and then eliminated by etching. In the method of manufacturing a semiconductor device according to the present invention, the cutting is stopped before the penetrating electrode is exposed, and then it is removed by etching until it reaches the insulating film. In the method of manufacturing a semiconductor device according to the present invention, the support plate substrate can be removed by etching. In the method of manufacturing a semiconductor device according to the present invention, the bonding system is anodic bonding. In the method for manufacturing a semiconductor device of the present invention, the adhesive is a polyimide resin. In the method for manufacturing a semiconductor device according to the present invention, the base material of the support plate is composed of a silicon wafer, the intermediate film is composed of aluminum, and the insulating film is composed of a silicon oxide film. In the method of manufacturing a semiconductor device according to the present invention, the base material of the support plate is made of aluminum. The electronic device of the present invention is formed by depositing a plurality of semiconductor devices connected to each other by a protruding electrode. In the electronic device of the present invention, at least one side of the semiconductor device is formed by connecting at least one of a through-electrode or a protruding electrode with a circuit board on which a passive element is placed. In the electronic device according to the present invention, both surfaces of the semiconductor device are sandwiched by at least a first circuit substrate and a second circuit substrate connected to one of the penetrating electrode or the protruding electrode. The electronic device of the present invention embeds a semiconductor device in the core of a circuit board, and the wiring formed on both sides of the circuit board is connected to at least the through electrode 15 312 / Invention Manual (Supplement) / 92-06 / 92107728 1223391 or a protrusion One of the electrodes. The semiconductor device of the present invention includes a through hole on a semiconductor substrate formed on a main surface of a circuit element portion constituting a predetermined function, the through hole extending from the circuit forming surface to the reverse side of the circuit forming surface, and a conductive circuit along the through hole. The insulating material surrounding each of the conductive gs, and there is no material other than the insulating material between the adjacent conductive circuits. A semiconductor device according to the present invention includes a substrate body having a hole extending substantially perpendicularly from a circuit formation surface, a through electrode penetrating the hole while protruding an end portion from at least one of both surfaces of the substrate body, and a periphery of the through electrode. A through-insulating film formed on the surface; and an insulating film formed on the side of the substrate body protruding from the through-electrode side by the substrate body perpendicularly to the through-insulating film. In the semiconductor device of the present invention, the end surface of the penetrating electrode penetrating from the substrate body and protruding from the substrate body is substantially parallel and flat to the circuit formation surface of the substrate body. [Embodiment 1] (Embodiment 1) Figs. 1 to 10 are diagrams illustrating respective manufacturing steps in a method of manufacturing a semiconductor device according to the present invention. Hereinafter, a manufacturing procedure of the semiconductor device 100 will be described with reference to the drawings. First, a plurality of circuit element sections 2 having a predetermined function are arranged on the circuit formation surface of the surface of the substrate body 1 (first step). Next, as shown in FIG. 2, the reverse side of the circuit formation surface of the substrate body 1, that is, the back surface is cut to a predetermined thickness (second step). 312 / Explanation of the Invention (Supplement) / 92-06 / 92107728 16 1223391 ′ As shown in FIG. 3, a metal plate such as aluminum is affixed to the back of the substrate body 1 as the support plate 3 (third step). This attaching operation is performed by applying an electric field and performing anodic bonding using the substrate body 1 as an anode and the support plate 3 as a cathode. In addition, before the support plate 3 is affixed to the back surface of the substrate body 1, a silicon oxide having an oxide film is formed on the back surface of the substrate body 1. The backside of the semiconductor substrate is stable both electrically and chemically, and the electrical performance and reliability of the semiconductor device can be improved. Next, as shown in FIGS. 4 (a) and 4 (b), in a region of the substrate body 1 other than the region of the circuit element portion 2, a lattice saw can be formed by, for example, a dicing saw to reach the first support plate 3. The first groove portion 4 (fourth step). As a result, the substrate body 1 is divided into a plurality of semiconductor substrates 50. Next, as shown in FIG. 5 (a) and FIG. 5 (b), a photosensitive polyimide resin or the like is used as an insulating material, and an insulating film 6 is formed on the surface of the semiconductor substrate 50 to be placed on the circuit. The electrode portion 5 is exposed on the element portion 2, and a hole 7 capable of reaching the support plate 3 is formed in the first groove portion 4 by a photolithography method. Alternatively, a photosensitive glass may be used in place of the polyimide resin (step 5). Next, as shown in FIGS. 6 (a) and 6 (b), the metal wiring pattern 8 is formed so that the holes 7 from the electrode portion 5 reach at least a part of the inner wall (sixth step). Thereafter, as shown in FIG. 7, for example, a predetermined amount of the support plate 3 on the bottom surface of the exposed hole 7 is removed by a method such as wafer etching (seventh step). Then, as shown in FIG. 8, for example, the first support plate 3 is used as a cathode, and a conductive metal such as solder is inserted into the hole 7 so as to be separated from the metal wiring 17 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 The surface of the pattern 8 protrudes to form a through electrode (eighth step). Next, as shown in FIGS. 9 (a) and 9 (b), along the center line of the first groove portion 4, the second groove portion 9 reaching the first support plate 3 is formed into a grid shape by, for example, a dicing saw or the like (ninth step). Finally, as shown in FIGS. 10 (a) and 10 (b), the first support plate 3 is removed by wafer etching, and a plurality of semiconductor devices 100 having a through electrode 10 from the surface to the inside at the periphery are manufactured. (Tenth step). The semiconductor device 100 manufactured as described above is provided with a hole 7 on the semiconductor substrate 50 on which the circuit element portion 2 is formed on one main surface, from the circuit formation surface to the opposite surface of the circuit formation surface, and along the The conductive circuit of the hole 7 has a metal wiring pattern 8 and a through electrode 10, and the photosensitive polyimide resin as an insulating material surrounds the conductive circuit 8 and 10, and the adjacent conductive circuits 8 and 10 There is no intervening matter other than insulation. The semiconductor device manufacturing method of the above embodiment can easily manufacture the semiconductor device 100 having the through electrode 10 in the peripheral portion. In addition, since the back surface of the substrate body 1 is removed by a predetermined amount before the support plate 3 is attached to the substrate body 1, the holes 7 in the semiconductor substrate 50 can be formed more easily. In addition, since the back surface of the substrate body 1 is formed of silicon oxide with an oxide film, the back surface of the semiconductor substrate 50 is electrically and chemically stable, and the electrical performance and reliability of the semiconductor device 1000 can be improved. In addition, since the support plate 3 is affixed by anodic bonding on the back surface of the substrate body 1, other types of materials such as adhesives are not required to be involved at all, and restrictions on the tolerance to drugs and the like during the manufacturing process are further reduced. 18 312 / Invention Manual (Supplement) / 92-06 / 92107728 1223391 In addition, because the first groove portion 4 is formed by a dicing saw, it is easier and more efficient to form the first groove portion 4. In addition, since two rows of holes 7 are formed in parallel in the first groove portion 4 between the circuit element portions 2 along the first groove portion 4, the penetration electrodes 10 in the peripheral portion are formed by the common first groove portion 4, so they are manufactured. The steps are simpler and easier to manufacture. Incidentally, the first groove portion 4 can also be formed by reactive ion etching. In this case, the first groove portion 4 with higher dimensional accuracy can be formed. In addition, because a photosensitive polyimide resin insulating material is used, When the hole 7 in the first groove portion 4 reaching the support plate 3 is formed, the insulating film 6 is formed on the surface of the semiconductor substrate 1 at the same time. Therefore, it is not necessary to provide another step for forming the protective film for the circuit element portion 2. Furthermore, it is possible to omit steps more than a non-photosensitive insulating material. In addition, since the second groove portion 9 is also formed by a dicing saw, the second groove portion 9 can be formed more efficiently and similarly to the first groove portion 4. In addition, in this embodiment, the support plate 3 is a metal plate, and the bottom surface of the hole 7 is removed by a predetermined amount by an etching method using an etching liquid, so that a through electrode protruding from the back surface of the semiconductor device 100 can be easily formed. The metal plate is an aluminum plate, which is not only light in weight but also can reduce costs. In addition, since the support plate 3 is also removed by an etching method using an etching liquid, the support plate 3 can also be easily removed. In addition, the support plate 3 can be used as the cathode, and the metal can be buried in the hole 7 by electroplating. Therefore, compared with the electroless plating, the growth option can be higher. 19 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 to bury only part of hole 7. And you can use a wider range of materials. (Embodiment 2) Figures 11 to 13 are diagrams showing the steps of a method for manufacturing a semiconductor device according to a second embodiment of the present invention. Incidentally, in this embodiment and other embodiments, the same or equivalent elements and parts as those in FIGS. I to 10 are denoted by the same symbols. The manufacturing steps of this embodiment are the same as the first to ninth steps described above. In this embodiment, after the ninth step shown in FIGS. 9 (a) and 9 (b), as shown in FIG. 11, an adhesive 11 is used on the circuit formation surface side of the semiconductor substrate 50. At least the second support plate 12 is affixed on the adhesive surface side. In addition, a support sheet may be attached instead of the second support plate 12. After that, as shown in FIG. 12, the support plate 3 is removed by wet etching. Next, after the semi-finished product of the semiconductor device 100 is reversed as shown in FIG. 13 ', the detection function of the circuit element section 2 is checked by contacting the probe pin 13 with the through electrode 10. Finally, the second supporting plate 12 is peeled off or removed by other methods, and the semiconductor device 100 shown in FIG. 10 can be obtained. According to the manufacturing method of the semiconductor device according to the embodiment of the present invention, after removing the first support plate 3, the plurality of semiconductor devices 100 have not been individually separated, and only the second support plate 12 can be used to make operation and processing easier, and It is easier to check the function of the circuit element section 2. 20 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 (Embodiment 3) FIGS. 14 to 21 are diagrams showing each step of a method for manufacturing a semiconductor device according to Embodiment 3 of the present invention. In this embodiment, an insulating layer 14 is formed between the back surface of the substrate body shown in FIG. 14 and the first support plate 3 of an aluminum metal plate. The insulating layer 14 is made of, for example, an adhesive material before polyimide is formed, and the first support plate 3 is adhered to the back surface of the substrate body 1 with the adhesive material, and then the adhesive material is formed by heating and curing. The other steps of manufacturing are the same as those of the first embodiment. In this embodiment, as shown in FIG. 21, a semiconductor device 3500 having an insulating layer 14 formed on the rear surface of the semiconductor substrate 50 can be obtained. In this embodiment, the back surface of the substrate body 1 and the support plate 3 are adhered with an adhesive material, and after curing, they are hardened to become the insulating layer 14 and remain on the semiconductor substrate after the support plate 3 is removed. Therefore, the adhesive remains intact and forms a stable insulating layer in the semiconductor device 350. (Embodiment 4) FIGS. 22 to 28 are diagrams showing respective steps of a method for manufacturing a semiconductor device according to Embodiment 4 of the present invention. The manufacturing steps of this embodiment, the steps up to the third step of the first embodiment, that is, the steps before the step shown in FIG. 3 of attaching the first support plate 3 to the back of the substrate body 1 are the same as those of the first embodiment. . In the present embodiment, as shown in Fig. 22, a first groove portion 15 is formed around the circuit element portion 2 and reaching the support plate 3 by, for example, a cutting method. Thereafter, as shown in FIG. 23, for example, a photosensitive polyimide resin is used as the insulation material 21 312 / Invention Specification (Supplement) / 92-06 / 92107728, and the photolithography method is used on the surface of the semiconductor substrate 50. The insulating film 17 is formed so that the electrode portion 5 of the circuit element portion 2 is exposed, and the first groove portion 1 5 is also formed in a hole 16 reaching the support plate 3. Incidentally, a photosensitive glass may be used in place of the photosensitive polyimide resin. Next, as shown in FIG. 24, a metal wiring pattern 8 'is formed on the insulating film 17 so that it can reach at least a part of the inner wall of the hole 16 from the electrode portion 5. Next, as shown in FIG. 25, the supporting plate 3 on the bottom surface of the exposed hole 16 is removed by a certain amount by, for example, wet etching. Thereafter, as shown in FIG. 26, electroplating is performed using a conductive metal such as solder, using, for example, the support plate 3 as a cathode, a through electrode 10 is buried, a hole 16 is formed, and the surface protrudes from the insulating film 17. Next, as shown in Fig. 27, the grid-like second groove portion 9 of the support plate 3 is reached along the center line between the adjacent first groove portions 15 and is formed by, for example, a dicing saw. Finally, as shown in FIG. 28, by removing the support plate 3 by wet etching, a semiconductor device 300 having a through electrode from the surface of the peripheral portion to the back surface can be obtained. According to this embodiment, two rows of first groove portions 15 extending between the circuit element portions 2 can be formed respectively, and a row of parallel holes 16 can be formed in each of the first groove portions 15. Therefore, it is the same as the semiconductor device of Embodiment 1. In comparison with the manufacturing method, since the second groove portion 9 is formed on the substrate body 1, the blade used for cutting the substrate body 1 can be used. In addition, the peripheral portion of the semiconductor device 300 is a part of the semiconductor substrate 50, and the semiconductor devices 1 to 3 22 312 / Invention Specification (Supplement) / 92-06 / 92107728 1 ο ο, 2 〇 0 phase In comparison, the rigidity of the penetrating electrode 10 in the peripheral portion can be more protected by 'just so'. (Embodiment 5) Figures 29 to 40 are diagrams showing steps in a method for manufacturing a semiconductor device according to a fifth embodiment of the present invention. In this embodiment, first, as shown in Fig. 2 ', a cavity portion 21 is formed on a support plate 20 of an aluminum metal plate. Next, as shown in FIG. 30, an electrode material is poured into the cavity portion 21 to form a first protruding electrode 23. Thereafter, as shown in FIG. 31, a first metal wiring pattern 22 connected to the first protruding electrode 23 is formed at a predetermined position on the support plate 20. Next, as shown in FIG. 32, the substrate body 1 shown in FIG. 2 is adhered to the first metal wiring pattern 22 using an adhesive agent such as polyimide resin. The adhesive can be cured by heating to form the insulating layer 24. Next, as shown in FIG. 33, in the region of the substrate body 1 between the circuit element portions 2, a first groove portion 25 in a grid shape is formed by, for example, a cutting method, and extends to the front of the first metal wiring pattern 22. The substrate body 1 is divided into a plurality of semiconductor substrates 50 through the first groove portions 25 formed. Next, as shown in FIG. 34, for example, using a photosensitive polyimide resin as an insulating material, an insulating film 6 is formed on the surface of the semiconductor substrate 50 so that the electrode portion 5 is exposed on the circuit element portion 2. The groove portion 25 forms a hole 26 that reaches the support plate 20 by a photolithography method. Alternatively, a photosensitive glass may be used in place of the photosensitive polyimide resin. Next, as shown in FIG. 3, a second metal wiring pattern 27 is formed so that it reaches 23 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 A part of the inner wall of the hole 2 6 of the electrode portion 5 is rarely reached . Next, as shown in FIG. 36, the insulating layer 24 on the bottom surface of the hole 26 is removed to expose the second metal wiring pattern 27. Thereafter, as shown in FIG. 37, a conductive metal such as solder is used, and a support plate 20 is used as a cathode to enter the power mine, so as to form a buried through electrode 30 and a hole 26 to be routed from the second metal. The pattern 2 7 protrudes from the surface. Next, as shown in FIG. 38, a second protruding electrode 28 is provided at a predetermined position on the second metal wiring pattern 27. Next, the center line between the first groove portions 25 as shown in FIG. 39 does not reach the grid-shaped second groove portions 29 of the support plate 20, and is formed by, for example, a dicing saw. Finally, by removing the support plate 20 by wet etching, a semiconductor device 400 provided with a first protruding electrode 23 electrically connected through a through electrode 30 on the surface side can be obtained. In this embodiment, the semiconductor device 400 having the first protruding electrode 23 and the second protruding electrode 28 can be easily manufactured. (Embodiment 6) Figure 41 shows a semiconductor device 500 manufactured by a manufacturing method according to a sixth embodiment of the present invention. In this semiconductor device 500, the second protruding electrode 28 in the fifth embodiment is eliminated. The semiconductor device 600 of FIG. 42 is an example in which the first protruding electrode 23 of the fifth embodiment is eliminated, and the semiconductor device 700 of FIG. 43 is provided with a second protruding electrode 28 on a circuit formation surface of the semiconductor substrate 50 and a reverse surface thereof. Let us take an example of the first bump electrode 23. (Embodiment 7) 24 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 FIG. 4 is a cross-sectional view of a semiconductor device 8000 manufactured by a manufacturing method according to Embodiment 7 of the present invention, and FIG. 45 is a diagram 44 enlarged view of important parts. In this embodiment, the insulating layer 24 on the bottom surface of the hole 26 in which the through electrode 30 is buried is removed first so that the first metal wiring pattern 22 as a conductive circuit is exposed, and then a second metal wiring as a conductive portion is formed. The pattern 2 7 ′ allows a part of the electrode on the circuit formation surface to reach at least a part of the inner wall of the hole 26. In other words, compared with the semiconductor device 700 of the sixth embodiment shown in Fig. 43, the order of the step of exposing the first metal wiring pattern 22 and the step of forming the first metal wiring pattern 27 are reversed. Furthermore, there is no step of embedding a metal in the holes 26 to form a through electrode. In addition, in the semiconductor device 900 of FIG. 46, two rows of first groove portions 15 are formed between the circuit element portions 2, and a row of holes 16 arranged in each of the first groove portions 15 is formed. Sectional view of important parts. Incidentally, in the method for manufacturing a semiconductor device according to each of Embodiments 1 to 7, the metal particles having a diameter of about 3 to 3 Onm may be dispersed in a solution covered with a surfactant to independently disperse ultrafine particles and rotate. After coating and sintering on the surface of the semiconductor substrate and the first groove portion, the burned portion may be partially eliminated to expose the electrode portion, and a hole may be formed in the first groove portion. In this case, the impact of wastewater treatment and the like on the environment is relatively small, and because the spin coating is applied, the integration in the manufacturing process of the semiconductor device is better. In addition, a method of embedding a conductive material metal in the hole can also be performed by electroless gold plating. In this case, the time required for the embedding step is shorter, 25 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 and it is simpler. In addition, a paste-like conductive agent can also be used as the conductive material in the holes, so that the step of embedding can be further omitted. In addition, the embedding of the conductive material in the pores can also cover the metal particles with a diameter of about 3 to 30 nm by a surface active agent, and sinter the individually dispersed ultrafine particles dispersed in the solution by screen printing. In addition, the embedding of the conductive material in the hole can also be performed by depositing metal ultrafine particles produced by the gas deposition method on a semiconductor substrate on the decompression chamber stage by a gas deposition method blown out by a nozzle facing the hole. . This reduces the time required for the burying step, reduces material waste, and reduces environmental impact. In addition, a metal film may be deposited on the entire surface of the semiconductor substrate and the first groove, and the metal film is used as a cathode for electroplating to form a metal wiring pattern after the metal is buried in the hole. At this time, the metal is buried in the hole. When plating, it is not necessary to use metal (conductor) as the support plate. Alternatively, a predetermined amount of metal wiring pattern may be formed after the hole bottom surface is removed from the electrode portion to reach the hole. This increases the reliability of the electrical connection. In addition, the first groove portion may be formed by reactive ion etching, or the protruding electrode may be provided in a place other than the peripheral portion of the semiconductor device. (Embodiment 8) FIG. 4 is a cross-sectional view of an electronic device in which a semiconductor device 100 manufactured by the manufacturing method of Embodiment 1 is connected to and penetrated through a plurality of stages through electrodes 10, and can be obtained in this embodiment. Highly concentrated high-performance electronics 26 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 machine. (Embodiment 9) FIG. 48 is a connection to a small circuit board 3 2 on which a passive element 31 such as a chip capacitor is placed on a penetrating electrode 10 of a semiconductor device 100 manufactured by the manufacturing method of Embodiment 1. Picture of an electronic machine with integrated functions. In this case, it can be miniaturized more than the so-called hybrid IC. (Embodiment 10) Figures 4 and 9 are connected to the through-electrodes 10 of the semiconductor device 100 manufactured by the manufacturing method of Embodiment 1. The first circuit board 3 with electronic components 35 on the front and back sides 3, and the electronic components A diagram of an electronic device of the second circuit board 34 of 36. At this time, a three-dimensional space connection structure 'can be used to obtain an electronic device with a higher degree of freedom and a more integrated circuit. (Embodiment 11) FIG. 50 is a partial cross-section of an electronic device of a semiconductor device 100 manufactured by the manufacturing method of Embodiment 1 with a board core 41 embedded therein and a wiring layer 42 connected to both sides of a circuit board 40 on both surfaces of the through electrode 10 Illustration. At this time, it becomes a three-dimensional space connection structure, and an electronic device with a higher degree of freedom and a more integrated integrated circuit can be obtained. It also has the effect of reducing wiring delay. Incidentally, in the eighth to eleventh embodiments, each of the semiconductor devices 100 manufactured by the manufacturing method of the first embodiment is incorporated into an electronic device as an example, but of course, the manufacturing methods of the first to seventh embodiments can also be used. Manufactured semiconductor devices 200, 300, 400, 500, 600, 700, 800, and the manufacturing methods described in Embodiments 12 to 18 described below 27 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 semiconductor device, naturally. (Embodiment 1 2) FIGS. 51 (a) to 51 (g) are diagrams showing steps in a method for manufacturing a semiconductor device and a body device according to Embodiment 12 of the present invention. ^ The following is a description of the manufacturing steps of the semiconductor device with a diagram. First, as shown in FIG. 51 (a), a substrate body 2 10 is manufactured on the surface of the circuit formation surface, and a plurality of circuit element portions 2 i i having predetermined functions are arranged. In addition, a support plate member 2 1 2 made of a silicon wafer is also prepared in advance (first step). _ Secondly, as shown in FIG. 51 (b), the circuit forming surface of the substrate body 210 made of a silicon wafer is formed on the reverse side of the circuit formation surface, that is, the back surface, and a portion of the thickness is formed by the trench etching step in the subsequent step. The holes 2 1 3 are thinner in depth. On the other hand, an intermediate film 2 1 4 is formed with an aluminum film or the like on the surface of the supporting plate member 2 1 2, and an insulating film 215 made of S i 0 2 or alumina is formed on the surface of the intermediate film 2 1 4 and manufactured. Support plate 217 (second step). Thereafter, as shown in FIG. 51 (c), the support plate 217 and the base plate body 2 10 thinned after honing are anodically bonded (third step). At this time, a material called PSG (Phosphosilicate Glass) or BSPSG (Brophosphosilicate Glass) is attached to the surface of the insulating film 2 1 5. In this way, phosphorus or boron is doped in the insulating film 2 1 5, so that the surface of the insulating film 2 1 5 is more likely to induce charges, and it is easier to perform anodic bonding. In addition, not only the surface of the insulating film but also the entire insulating film may be made of these materials. -_

附帶說明，在先前說明的實施形態中之陽極接合，也都 可以在絕緣膜表面或者整個絕緣膜使用PSG或者BSPSG 28 312/發明說明書(補件)/92-06/92107728 1223391 的材料。 其次，如圖5 1 (d)所示，由電路元件部2 1 1進行蝕刻， 其爲進行能到達深度在1 00 // m左右的支撐板構件2 1 2的 蝕刻處理（第四步驟）。 再其次，如圖51(e)所示，在孔洞213內壁面上形成絕緣 膜，其後將作爲電鍍時的陰極的金屬膜沉積在絕緣膜上。 然後，以該金屬膜爲陰極以電鍍再孔洞2 1 3內部由導電性 材料形成貫穿電極2 1 6。 其後，如圖5 1 (f)所示，將支撐板2 1 2去除，並且切削背 面使得中間膜2 1 4和貫穿電極2 1 6的端面在同一面上（第五 步驟）。此時，貫穿電極2 1 6的端面即可平坦化。 最後，如圖51(g)所示，以蝕刻將中間膜214完全去除， 製造出貫穿電極216能從基板本體210背面突出的半導體 裝置集合體，將該半導體裝置集合體分割成多個半導體裝 置（第六步驟）。在該步驟中，蝕刻處理僅僅對中間膜2 1 4 進行，並不到達絕緣膜2 1 5，其結果，即可使得絕緣膜2 1 5 轉印到基板本體2 1 0背面上。而且，被蝕刻的支撐板2 1 2、 中間膜2 1 4，只要選擇能輕易蝕刻的材料使用即可。 以上述步驟所製造的半導體裝置，在製造途中係以支撐 板2 1 2來支撐基板本體2 1 0，因此先行技術中所需要的薄 形化之後的絕緣膜形成以及其貫穿電極的開口處都已不需 要，僅僅在不需要求加工精確度的單純步驟中（請參照圖 51(f)、圖51(g))，才能形成從基板本體210背面突出的貫 穿電極2 1 6，因此能減低在製造步驟發生的支撐板構件2 i 2 29 312/發明說明書(補件)/92-06/92107728 1223391 破損機率，進而提高半導體裝置製品的良率。 此外，因爲在基板本體2 1 〇的背面側設置由絕緣膜2 1 5， 故在磨削背面側時，電極材料殘留在基板本體背面並擴散 到基板本體中，形成超出期待的能源順序，而能防止造成 半導體裝置特性劣化的發生。 此外’因爲使用陽極接合來進行支撐板構件2 1 2和基板 本體2 1 0的結合，故支撐板構件2〗2和基板本體2丨〇之間 並不存在其他不同種類的材料，而使得蝕刻形成孔洞2 1 3 的步驟更輕易進行。 此外，支撐板構件21 2使用s i、中間膜2 14使用A1，絕 緣膜215使用Si02，這些都是現在的半導體製造步驟中一 般使用的技術，這些加工技術也都已經高度成熟，使用的 是已經確實穩定的材料，故不但能提高製品良率，更能降 低成本。 圖52爲以圖51所示方法所製造之半導體裝置350的重 要部分剖面圖。 基板本體2 1 0的孔洞2 1 3形成在相對於電路形成面的大 致垂直方向。該孔洞2 1 3的垂直壁面上則形成貫穿絕緣膜 218。貫穿電極216貫穿於該孔洞213，而貫穿電極216的 連端都從中突出。在基板本體2 1 0背面側，去除貫穿電極 2 1 6的下端面而形成絕緣膜2 1 5。該絕緣膜2 1 5和貫穿絕緣 膜218成大致垂直交叉。 在實施形態1 2的半導體裝置3 5 0中，貫穿電極2 1 6和 基板本體2 1 0之間，並未使得基板本體2 1 0背面露出，故 3〇 312/發明說明書(補件)/92-06/92107728 1223391 在絕緣性上並無問題，另外，絕緣膜2 1 5也不會攀上貫穿 電極2 1 6的端面，故貫穿電極的結合性也不會發生問題。 此外，從基板本體2 1 0貫穿的多個貫穿電極2 1 6的下端 面，和基板本體210的電路形成面大致成平行，並具有平 坦的面，而且因爲從基板本體2 1 〇的絕緣膜2 1 5上各個貫 穿電極216的突出量大致相同，故在半導體裝置互相沉積 並作電氣結合的時候其結合性也相當良好。 (實施形態13) 圖53(a)到圖53(g)係爲表示本發明實施形態13的半導 體裝置之製造方法的各步驟圖。 以下，以圖式就該半導體裝置的製造步驟加以說明。 首先，如圖53(a)所示，製造配置有多個電路元件部211 的基板本體210，該電路元件部211在表面的電路形成面 上具有所規定的功能。此外，在矽晶圓所構成的支撐板構 件2 12表面上，形成以A1膜所構成的中間膜214(第一步 驟）。 其次，如圖53(b)所示，將和基板本體210的電路形成 面反面側的背面，硏磨到厚度比以後步驟的溝飩刻所形成 的孔洞2 1 3深度更薄。另一方面，表面以A1膜形成中間膜 2 1 4的支撐板構件2 1 2上，在該中間膜2 1 4表面上，塗敷 以聚醯亞胺樹脂構成的接著劑的絕緣膜220，以形成支撐 板221(第二步驟）。 其後，如圖53(c)所示，在支撐板221上，將硏磨到夠薄 的基板本體2 1 0，以上述接著劑硬化的方法黏接（第三步 31 312/發明說明書(補件)/92-06/92107728 1223391 驟）。 其後，以圖53(d)到圖5 3(g)所示的步驟來製造半導體裝 置，各該步驟都和實施形態12所述的51(d)到圖5 1(g)相 同。 在本實施形態的半導體裝置中，作爲接著劑的聚醯亞胺 樹脂前驅體，係用來取代實施形態1 2的半導體裝置中所使 用的陽極接合。 陽極接合因爲需要比較高度的技術而使得製作費用也 提高，但是若使用聚醯亞胺樹脂，即可使得步驟所需成本 降低。 (實施形態14) 圖5 4(a)到圖54(g)係爲表示本發明實施形態14的半導 體裝置之製造方法的各步驟圖。 本實施形態中和實施形態1 2的半導體裝置之製造方法 相比較，不同之處在於：並不形成中間膜2 1 4，換句話說， 實施形態1 2的支撐板2 1 7係以中間膜2 1 4以及絕緣膜2 1 5 沉積而成，相對於此，實施形態1 4的支撐板2 3 0係在支撐 板構件2 1 2上面形成絕緣膜2 1 5，其結果使得圖5 4 (b)到圖 5 4 ( f)的步驟不同。 附帶說明，在本實施形態中，基板本體2 1 0和支撐板構 件2 1 2的結合也是以陽極接合進行，此外，在孔洞2 1 3的 內壁面上形成絕緣膜，之後在絕緣膜上沉積作爲電鍍陰極 的金屬膜，以該金屬膜爲陰極進行電鍍而在孔洞2 1 3內部 形成貫穿電極2 1 6。 32 312/發明說明書(補件)/92-06/92107728 1223391 在本實施形態中，因爲並未形成作爲硏磨加工衡量基準 的中間膜214,故基板本體210內側的硏磨加工，如圖53(f) 所示，必須在尙未達到絕緣膜2 1 5層的狀態下就停止。因 此，必須僅依靠尺寸來控制硏磨的程度，雖然因此而要求 更高的硏磨加工精準度，但是因爲不需要形成中間膜214 的步驟而使得製造步驟更加簡便。 另外，也可使用A1來取代S i晶圓作爲支撐板構件2 1 2， 如此即可更容易進行蝕刻，而可獲得和實施形態1 2相同的 作用效果。 此外，也可使得支撐板構件2 1 2的背面硏磨，在貫穿電 極2 1 6並未露出於背面的階段即予以停止，其後將支撐板 構件2 1 2完全蝕刻去除，使得貫穿電極2 1 6能自動從基板 本體2 1 0內側突出。如此一來，硏磨精確度即可不必要求 太高。 但是，各貫穿電極2 1 6從絕緣膜2 1 5上突出的量，非常 倚賴圖54(d)的溝蝕刻的鈾刻深度和其均整性，故各突出 量的均整性不良，而所突出的貫穿電極2 1 6端面上的平坦 性也較弱。 附帶說明，即使支撐板不同時形成中間膜2 1 4和絕緣膜 2 1 5，僅支撐板構件2 1 2的情形，也能夠製造具有貫穿電極 的半導體裝置。 也就是說可以下列的步驟來製造半導體裝置。 首先，在支撐板構件2 1 2表面上，以聚醯亞胺樹脂和圖 5 1(b)所示的基板本體210背面黏合，其後將聚醯亞胺樹脂 33 312/發明說明書(補件)/92-06/92107728 1223391 硬化形成絕緣膜。其次，形成從電路形成面到達支撐板構 件2 1 2的孔洞2 1 3，在孔洞2 1 3內側壁上形成貫穿絕緣膜。 接著’在孔洞2 1 3內埋設導電性材料以形成貫穿電極2丨6。 其次，使支撐板構件2 1 2從貫穿電極2 1 6端部突出，並且 留下絕緣膜2 2 0而將之去除。如此，將所製造的集合體半 導體裝置分割成多個即可。 (實施形態15) 圖5 5(a)到圖5 5(g)係爲表示本發明實施形態15的半導 體裝置的製造方法的各步驟圖。 Φ 本實施形態中和實施形態1 2的半導體裝置的製造方法 相比較，不同之處在於：係以具有埋設氧化膜24 1的 SOI(Silicon on Insulator)晶圓來構成基板本體，並且在 形成貫穿電極2 1 6時，孔洞2 1 3內壁面上並不形成絕緣 在本實施形態中，以機器硏磨、化學性機器硏磨、蝕刻、 或者該等技術並用加工，使得基板本體2 4 0的背面總厚度 到達只有數個micron左右的厚度，而使埋設氧化膜241 的其中一面露出（參照圖55(b))。 其後，以陽極結合將基板本體240和支撐板構件212結 合（參照圖55(c))，形成到達支撐板構件212的孔洞213 (參1 照圖 55(d)) 。 其次，在孔洞2 1 3內壁面上形成作爲電鍍陰極的金屬 ' 膜，以電鍍形成貫穿電極216(參照圖55(e))。 之後，硏磨支撐板構件2 1 2直到貫穿電極2 1 6端面露出 34 312/發明說明書(補件)/92-06/92107728 1223391 爲止（參照圖55(f))。 其次，以蝕刻法將支撐板構件2 1 2完全去除，以製造半 導體裝置集合體（參照圖55(g))，將該集合體分割以製造半 導體裝置。 此外，可以依照需要而形成中間膜2 1 4。 在本實施形態的半導體裝置中，基板本體2 4 0的埋設氧 化膜2 4 1相當於實施形態1 2中的絕緣膜2 1 5，故如同以下 所述，在支撐板構件2 1 2上形成絕緣膜2 1 5的步驟即可省 略不用，因此，不僅可使製造步驟更簡化，並且可以提昇 貫穿電極2 1 6的絕緣性。 此外，因爲基板本體240係以SOI晶圓所構成，而SOI 晶圓本身又比先前的晶圓的動作速度更快，故使用貫穿電 極的元件互相連接（沉積安裝）加上輸送電路縮短的效果， 更能提供快速動作的電子機器。 圖5 6爲以S i晶圓構成基板本體2 1 0狀況下的貫穿電極 216形成時的圖，圖57爲SOI晶圓構成基板本體240狀況 下的貫穿電極2 1 6形成時的圖。 但是，兩圖係明確比較用基板本體2 1 0的情形，和使用 基板本體240的情形的不同的對比圖，而非實施形態1 2 和實施形態1 5的半導體裝置的構成不同。 圖5 6的情形中，因爲基板本體2 1 0具有導電性，一旦 在孔洞2 1 3內壁面形成絕緣膜2 5 0之後，在上面沉積作爲 電鍍陰極的金屬膜2 5 1，其後在孔洞2 1 3內部埋設金屬， 形成貫穿電極2 1 6。 35 312/發明說明書(補件)/92-06/92107728 1223391 另一方面，在圖57的情形中，基板本體240係以SOI 晶圓構成，包含該基板本體240的電路元件部211的金屬 膜2 5 1非常薄，其下層埋設作爲絕緣膜的埋設氧化膜2 4 1， 並且更下層的支撐板構件212最後會被去除，故不需要孔 洞2 1 3內壁面上的絕緣膜。 (實施形態1 6 ) 圖58(a)到圖58(g)係爲表示本發明實施形態16的半導 體裝置之製造方法的各步驟圖。 本實施形態中和實施形態1 5的半導體裝置之製造方法 相比較，不同之處在於：以貼了極薄的半導體層例如石英 玻璃所成的絕緣基材261的貼合型SOI來取代基板本體 260的SOI晶圓。 在本實施形態的半導體裝置中，以機器硏磨、化學性機 器硏磨、蝕刻、或者該等技術並用，加工使基板本體260 的背面總厚度到達規定的厚度之後，依照和實施形態i 5 同樣的手續，使貫穿電極2 1 6從背面突出來。 在此情形中，可以加厚絕緣基材2 6 1的厚度直到鈾刻的 深度到達極限爲止，故和實施形態1 5比較起來，在各製造 步驟中的半成品都比較容易處置。 (實施形態17) 圖59(a)到圖59(g)係爲表示本發明實施形態17的半導 體裝置之製造方法的各步驟圖。 本實施形態中和實施形態1 6的半導體裝置之製造方法 相比較’不同之處在於：以A1取代Si晶圓作爲支撐板基 36 312/發明說明書(補件)/92-06/92107728 材 2 70 0 在此實施形態中，用金屬板作支撐板基材2 7 0，形成孔 洞2 1 3之後，孔洞2 1 3內部以電鍍形成貫穿電極2 1 6。不 再需要孔洞2 1 3內壁面上的絕緣膜、以及作爲電鍍陰極的 金屬膜形成，以支撐板基材270爲陰極以電鍍將金屬埋設 於孔洞2 1 3內部。 圖60爲以Si晶圓構成支撐板構件212狀況下的貫穿電 極2 16形成時的圖，圖61爲以金屬構成支撐板基材270 狀況下的貫穿電極2 1 6形成時的圖。 但是，兩圖係明確比較用支撐板構件2 1 2的情形，和使 用支撐板基材270的情形的不同處的對比圖，而非實施形 態1 6和實施形態1 7的半導體裝置之構成不同。 圖6 0的情形中，在包含孔洞2 1 3的全面上，必須先形 成作爲電鍍陰極的金屬膜251，並形成光阻272以避免孔 洞2 1 3之外的地方被電鍍，相對於此，圖6 1的情形下，不 需要形成金屬膜251和光阻272的步驟。 此外，在Si晶圓表面立體沉積以例如Cu構成的金屬中 間膜形成支撐板，形成到達該中間膜而不到達Si晶圓的孔 洞，以中間膜作爲陰極進行電鍍以形成貫穿電極亦可。 (實施形態18) 圖62 (a)到圖62(e)係爲表示本發明實施形態丨8的半導體 裝置之製造方法的各步驟圖。 以下’以圖式就該半導體裝置的製造步驟加以說明。 首先’在如圖6 2 (a)所示將絕緣基材2 6 1貼在S Ο I晶圓 37 312/發明說明書(補件)/92-06/92107728 1223391 2 62上所構成的基板本體260的電路形成面上，形成具有 規定功能的電路元件部2 1 1 (第一步驟）。 其次，如圖62(b)所示，從電路元件部21 1經由蝕刻而 達到絕緣基材2 6 1形成深度1 0 0 // m左右的孔洞2 1 3 (第二 步驟）。 其次，如圖62(c)所示，以電鍍在孔洞213內部，孔洞側 壁上不形成絕緣膜而直接形成貫穿電極216(第三步驟）。 其後，如圖62(d)所示，硏磨基板本體260背面直到貫 穿電極216端面露出爲止（第四步驟）。 最後，如圖62(e)所示，將絕緣基材261蝕刻去除到所規 定的厚度爲止，製造從基板本體260背面突出貫穿電極216 的半導體裝置集合體，將該半導體裝置集合體分割成多數 個而製造半導體裝置（第五步驟）。 在該半導體裝置中，顯示即使不使用支撐板基材，也可 製造具有貫穿電極的半導體裝置的例子。 附帶說明，在上述實施形態1 6至1 8之中，說明的是使 用在SOI晶圓262上貼上絕緣基材261所構成的基板本體 2 60製造半導體裝置的情形，然而用TFT基板也可以獲得 效果。 (發明的效果） 如以上所說明，依照本發明的半導體裝置之製造方法， 因爲包含下述步驟：在基板本體的背面貼上支撐板，該基 板本體在表面的電路形成面上形成多個具有所規定功能的 電路元件部；至少在前述基板本體的電路元件部的週邊部 38 312/發明說明書(補件)/92-06/92107728 1223391 或者電路元件部內的所規定部分的其中之一上，形成能到 達前述支撐板上的第一溝部；採用絕緣材料，在前述第一 溝部上形成能使支撐板從該底部露出的孔涧；形成金屬配 線圖案，該金屬圖案由形成在前述電路元件部上的電極部 到達前述孔洞的至少一部分內壁上；將前述孔洞底面去除 所規定量；將導電材料埋設入於前述孔洞內而形成貫穿電 極，使其得以由前述電路形成面突出，在前述電路元件部 週邊部形成能到達前述支撐板的第二溝部；以及去除前述 支撐板，藉以分離成多個半導體裝置，故在製造途中不會 讓基材變薄而能更方便加工處理，因此能輕易製造具有貫 穿電極的半導體裝置。 此外，依照本發明的半導體裝置之製造方法，因爲係在 電路元件部的週邊部形成第一溝部，而在第一溝部內形成 第二溝部，故更容易以機械加工來製造。 此外，依照本發明的半導體裝置之製造方法，因爲係在 基板本體貼上支撐板之前，先將基板本體的背面去除所規 定的量，故能更輕易形成半導體基板的孔洞。 此外，依照本發明的半導體裝置之製造方法，因爲係以 切片鋸來形成第一溝部，故能簡單並且效率良好的形成第 一溝部。 此外，依照本發明的半導體裝置之製造方法，因爲係以 反應性離子蝕刻來形成第一溝部，故能形成尺寸精確的第 一溝部。 此外，依照本發明的半導體裝置之製造方法，因爲在使 39 312/發明說明書(補件)/92-06/92107728 1223391 用絕緣材料在第一溝部形成到達支撐板上的孔洞時，也同 時在半導體基板表面形成絕緣膜，故不需要另外特地設置 形成電路元件部的保護膜的步驟。 此外，依照本發明的半導體裝置之製造方法，因爲係以 感光性玻璃或者聚醯亞胺樹脂作爲絕緣材料，而由以光微 影法來形成孔洞，故和不具備感光性的絕緣材料相比較製 造過程能夠更加簡化。 此外，依照本發明的半導體裝置之製造方法，因爲係以 切片鋸來形成第二溝部，故能簡單且效率良好的形成第二 溝部。 此外，依照本發明的半導體裝置之製造方法，因爲係將 直徑大約3〜3 Onm的金屬粒子分散於以介面活性劑所覆蓋 的溶液中的獨立分散超細微粒子，旋轉塗敷使其覆蓋在半 導體基板表面以及第一溝部以及形成在第一溝部上的孔洞 內部’在燒成以後，將燒成部分消除一部分而在孔洞內部 形成埋設的金屬部分，故在廢水處理等對環境造成的影響 比較少’而旋轉塗敷也更能提高半導體裝置製造過程的整 合性。 此外’依照本發明的半導體裝置之製造方法，因爲孔洞 內的導電性材料埋設，係將氣體環境內的蒸鍍法所產生的 金屬超細微粒子，放置在減壓室內的台上的半導體基板 上’以朝向孔洞的噴嘴吹出的氣體沉積法來進行，故和申 請專利範圍第9項同樣可減少埋設步驟所需時間，並且不 需要浪費多餘材料，對環境的影響更少。 40 3 U/發明說明書(補件)/92-06/92107728 1223391 此外’依照本發明的半導體裝置之製造方法，因爲支撐 板係爲金屬板’孔洞底面去除所規定量的步驟係以腐飩液 體的蝕刻來進行，故能簡單的形成半導體裝置背面的突起 ， 電極。 / 此外’依照本發明的半導體裝置之製造方法，因爲將金 屬埋設孔洞內的步驟，係以支撐板爲陰極的電鍍進行，故 和無電解電鍍相比較，選擇成長性更高，可以僅僅選擇埋 設孔洞部分，而且可使用得材料選擇範圍更廣。 此外’依照本發明的半導體裝置之製造方法，因爲包含 · 下述步驟：在基板本體的背面貼上支撐板，該基板本體在 表面的電路形成面上形成多個具有所規定功能的電路元件 部；在前述基板本體上形成能到達前述第一支撐板的第一 溝部；用絕緣材料，在前述第一溝部上形成能使支撐板從 該底部露出的孔洞；由形成在前述電路元件部上的電極部 到達前述孔洞的至少一部分內壁上的金屬配線圖案的形成 步驟；將則述孔洞底面去除所規定量；埋設入導電性材料 0 形成貫穿電極，使其在前述孔洞內能由前述電路形成面突 出；在前述電路元件部週邊部，形成能到達前述支撐板的 第二溝部；在前述半導體基板的電路形成面側貼上第二支 撐板；去除前述第一支撐板；以探針接觸前述貫穿電極以 檢查電路元件部的電路功能；以及去除第二支撐板，藉以 分離成多個半導體裝置，故去除第一支撐板後的多個半導 體裝置，因爲還有第二支撐板而不會個別化，僅僅如此即 可使操作更加容易，而電路元件部的功能也能更容易檢查。 41 312/發明說明書(補件)/92-06/92107728 1223391 此外，依照本發明的半導體裝置之製造方法，因爲係在 電路元件部週邊部形成第一溝部，在第一溝部內部形成第 二溝部，故可使用一般的刀刃來切斷基板本體。 此外，依照本發明的半導體裝置之製造方法，因爲係將 孔洞底面去除所規定量之後，形成從電極部到達前述孔洞 底面的金屬配線圖案，故可提昇電氣連接的可信賴性。 此外，依照本發明的半導體裝置之製造方法，因係在電 路元件部間的第一溝部內沿著第一溝部形成兩列並列的孔 洞，在該兩列孔洞之間形成第二溝部，因此週邊部的貫穿 電極係以共同的第一溝部所形成，故使得製造步驟更簡 單，製造更容易。 此外，依照本發明的半導體裝置之製造方法，因爲係在 電路元件部間分別形成兩列延伸的第一溝部，在各第一溝 部內形成一列排列的孔洞，在兩列延伸的第一溝部之間形 成第二溝部，故和申請專利範圍第2 2項的半導體裝置之製 造方法相比較，因爲第二溝部的形成係設於基板本體，故 可使用一般的刀刃來切斷基板本體，和申請專利範圍第2 2 項相比較，剛性更高，僅僅如此即可更保護週邊部的貫穿 電極。 此外，依照本發明的半導體裝置之製造方法，因爲係以 陽極結合將支撐板貼在半導體基板背面上，故不需要任何 接著劑等不同質的材料介入，在製造時所受的藥物承受性 等限制則可減少。 此外，依照本發明的半導體裝置之製造方法，因爲基板 42 312/發明說明書(補件)/92-06/92107728 1223391 本體背面和支撐板之間係以接著材料黏接，黏接後使其硬 化而成爲絕緣層’在去除支撐板之後仍殘留在半導體基板 背面上’故接著材料可直接安定形成半導體裝置的絕緣層。 此外’依照本發明的半導體裝置之製造方法，因爲在將 支撐板貼於半導體基板背面之前，先在半導體基板背面形 成氧化膜，故半導體基板的背面在電氣上、化學上都很安 定’半導體裝置的電氣性能、信賴度都能提昇。 此外’依照本發明的半導體裝置之製造方法，因爲係在 電路元件部內部設置第一溝部，故也可在半導體裝置的週 邊部之外設置貫穿電極。 此外，依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：在支撐板上形成孔洞部；在該孔洞部塡入電極 材料以形成第一突起電極；形成第一金屬配線圖案以使第 一突起電極和前述支撐板上所規定位置連接；用接著材料 將基板本體·的背面貼在上述支撐板上，該基板本體在表面 的電路形成面上形成多個具有所規定功能的電路元件部； 在電路元件部間的基板本體區域中，形成第一溝部，使其 能到達以前述第一金屬配線圖案前面的前述接著材料所形 成的絕緣層；用絕緣材料，在前述半導體基板表面上，去 除前電路元件部的電極部以形成絕緣膜，並在前述第一溝 部形成能到達支撐板的孔洞；形成第二金屬配線圖案，使 電極部到達前述孔洞的至少一部分內壁；去除前述孔洞底 面的絕緣層，使第一金屬配線圖案露出；在前述孔洞中埋 設金屬以形成貫穿電極的步驟；在前述第二金屬配線圖案 43 312/發明說明書(補件)/92-06/92107728 1223391 的所規定位置上設置第二突起電極；設置沿前述第一溝部 到達前述支撐板的第二溝部，分割成多個半導體基板；以 及去除前述支撐板，故可輕易製造具有第一突起電極和第 二突起電極的半導體裝置。 此外，依照本發明的半導體裝置之製造方法，因爲削減 了在支撐板形成穴部，在該穴部中塡入電極材料形成第一 突起電極的步驟、或者在前述第二金屬配線圖案的所規定 位置設置第二突起電極的步驟，·故製程步驟更加簡化。 此外，依照本發明的半導體裝置之製造方法，因爲削減 孔洞底面的絕緣層而使得第一金屬配線圖案露出後，形成 第二金屬配線圖案，從電極部通過前述孔洞和第一金屬配 線圖案連接，故可削減在孔洞內埋設金屬而形成埋設貫穿 電極的步驟。 此外，依照本發明的半導體裝置之製造方法，因爲係包 含在電路形成面上形成突起電極的步驟，故能輕易獲得在 電路形成面上具有突起電極的半導體裝置。 此外，依照本發明的半導體裝置之製造方法，因爲包含 在背面形成突起電極的步驟，故能輕易獲得在電路形成面 上具有突起電極的半導體裝置。 此外，依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：在表面的電路形成面上，形成具有所規定功能 的電路元件部，將前述基板本體的背面硏磨成所規定的厚 度；將在支撐板基材表面以中間膜和絕緣膜的順序形成的 支撐板的絕緣膜，和硏磨過的前述基板本體的背面結合； 44 312/發明說明書(補件)/92-06/92107728 1223391 由前述電路形成面形成到達前述支撐板基材的孔洞，形成 貫穿孔洞內側壁的絕緣膜；在前述孔洞內埋設導電性材料 以形成前述貫穿電極；硏磨到前述中間膜露出爲止，而使 前述貫穿電極的端部突出；以及以蝕刻去除前述中間膜使 得前述絕緣膜露出的步驟，故在製造途中，基板本體由支 撐板基材所支撐’所以不再需要先前薄型化後所需的絕緣 膜形成和貫穿電極的開口，僅需不要求加工精度的單純步 驟即可形成由基板本體背面突出的貫穿電極，減少在製造 過程中基板本體發生破損的機率，提昇半導體裝置製品的 良率。 此外，因爲在基板本體背面側設絕緣膜，故在削去背面 側時，電極材料可殘留在基板本體背面而擴散到基板本體 內，形成未曾期待的能量順序，而可防止半導體裝置特性 劣化。 此外，因爲支撐板基材的中間膜在削去支撐板時成爲提 醒標誌，可確實在絕緣膜之前停止削去支撐板，故在半導 體裝置背面可確實形成絕緣膜。 此外’依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：在表面的電路形成面上，形成具有所規定功能 的電路元件部，將前述基板本體的背面削去而成所規定的 厚度；將削去後的前述基板本體的背面，接合在支撐板基 材表面形成有絕緣膜的支撐板的絕緣膜上；由前述電路形 成面形成到達前述支撐板基材的孔洞，形成貫穿孔洞內側 壁的絕緣膜；在前述孔洞內埋設導電性材料以形成前述貫 45 312/發明說明書(補件)/92-06/92107728 1223391 穿電極；硏磨到前述中間膜露出爲止而使得前述貫穿電極 的端部突出；以及將前述中間膜蝕刻去除而使前述絕緣膜 露出，故在製造途中，基板本體由支撐板基材所支撐，所 以不再需要先前薄型化後所需的絕緣膜形成和貫穿電極的 開口，僅需不要求加工精度的單純步驟即可形成由基板本 體背面突出的貫穿電極，減少在製造過程中基板本體發生 破損的機率，提昇半導體裝置製品的良率。 此外’因爲在基板本體背面側設絕緣膜，故在削去背面 側時，電極材料可殘留在基板本體背面而擴散到基板本體 內，形成未曾期待的能量順序，而可防止半導體裝置特性 劣化。 此外，因爲支撐板基材的中間膜在削去支撐板時成爲提 醒標誌，可確實在絕緣膜之前停止削去支撐板，故在半導 體裝置背面可確實形成絕緣膜。 此外，因爲絕緣膜也具有接合支撐板和基板本體的接著 劑作用，故接合步驟直接成爲絕緣膜形成步驟，而使製作 步驟更加簡化。 此外，依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：在表面的電路形成面上，形成具有所規定功能 的電路元件部，將前述基板本體的背面削去而成所規定的 厚度；將削去後的前述基板本體的背面，接合在支撐板基 材表面形成有絕緣膜的支撐板的絕緣膜上；由前述電路形 成面形成到達前述支撐板基材的孔洞，形成貫穿孔洞內側 壁的絕緣膜；在前述孔洞內埋設導電性材料以形成前述貫 46 312/發明說明書(補件)/92-06/92107728 1223391 穿電極；以及使前述支撐板基材突出於前述貫穿電極的端 部，並且將前述絕緣膜留下的去除步驟，故在製造途中， 基板本體由支撐板基材所支撐，所以不再需要先前薄型化 後所需的絕緣膜形成和貫穿電極的開口，僅需不要求加工 精度的單純步驟即可形成由基板本體背面突出的貫穿電 極，減少在製造過程中基板本體發生破損的機率，提昇半 導體裝置製品的良率。 此外，因爲在基板本體背面側設絕緣膜，故在削去背面 側時，電極材料可殘留在基板本體背面而擴散到基板本體 內，形成未曾期待的能量順序，而可防止半導體裝置特性 劣化。 此外，因爲支撐板基材的中間膜在削去支撐板時成爲提 醒標誌，可確實在絕緣膜之前停止削去支撐板，故在半導 體裝置背面可確實形成絕緣膜。 此外，因爲支撐板背面沒有作爲削去標誌的中間膜，故 僅如此即可省卻需要高度削去加工精度的中間膜形成步 驟，而簡化製造步驟。 此外，依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：將具有作爲絕緣膜的埋設氧化膜的前述基板本 體的背面削去而成所規定的厚度；將削去後的前述基板本 體的背面’接合在支撐板基材表面上；使前述接著劑硬化 而形成絕緣膜；由前述基板本體的表面形成能到達前述支 撐板基材的孔洞，並在前述孔洞內側壁形成貫穿電極；在 前述孔洞內埋設導電性材料以形成前述貫穿電極的步驟； 47 312/發明說明書(補件)/92-06/92107728 1223391 使前述貫穿電極的端部突出，並且將前述絕緣膜留下的去 除步驟，故在製造途中，基板本體由支撐板基材所支撐， 所以不再需要先前薄型化後所需的絕緣膜形成和貫穿電極 的開口，僅需不要求加工精度的單純步驟即可形成由基板 本體背面突出的貫穿電極，減少在製造過程中基板本體發 生破損的機率，提昇半導體裝置製品的良率。 此外，因爲在基板本體背面側設絕緣膜，故在削去背面 側時，電極材料可殘留在基板本體背面而擴散到基板本體 內，形成未曾期待的能量順序，而可防止半導體裝置特性 劣化。 此外，因爲支撐板基材的中間膜在削去支撐板時成爲提 醒標誌，可確實在絕緣膜之前停止削去支撐板，故在半導 體裝置背面可確實形成絕緣膜。 此外，因爲支撐板背面沒有作爲削去標誌的中間膜，故 僅如此即可省卻需要高度削去加工精度的中間膜形成步 驟，而簡化製造步驟。 此外，依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：將具有作爲絕緣膜的埋設氧化膜的前述基板本 體的背面削去而成所規定的厚度；將削去後的前述基板本 體的背面，接合在支撐板基材表面上；由前述基板本體的 表面形成能到達前述支撐板基材的孔洞；在前述孔洞內埋 設導電性材料以形成前述貫穿電極的步驟；以及使前述支 撐板基材突出於前述貫穿電極的端部，並且將前述絕緣膜 留下的去除步驟，故在製造途中，基板本體由支撐板基材 48 312/發明說明書(補件)/92-06/92107728 1223391 所支撐，所以不再需要先前薄型化後所需的絕緣膜形成和 貫穿電極的開口，僅需不要求加工精度的單純步驟即可形 成由基板本體背面突出的貫穿電極，減少在製造過程中基 / 板本體發生破損的機率，提昇半導體裝置製品的良率。 ^ 此外，因爲在基板本體背面側設絕緣膜，故在削去背面 側時，電極材料可殘留在基板本體背面而擴散到基板本體 內，形成未曾期待的能量順序，而可防止半導體裝置特性 劣化。 此外，因基板本體本身具有絕緣膜，故不需要在支撐板 鲁 基材上形成絕緣膜的步驟，不僅能使製造過程更簡單，更 能提昇貫穿電極的絕緣性。 此外，依照本發明的半導體裝置之製造方法，因爲包含 下述步驟：將具有作爲絕緣膜的埋設氧化膜的前述基板本 體的背面削去而成所規定的厚度；由前述基板本體表面形 成超越前述埋設氧化膜的孔洞；在前述孔洞內埋設導電性 材料以形成前述貫穿電極；以及使前述貫穿電極的端部突 $ 出於前述基板本體背面，並且使前述埋設氧化膜露出的去 除步驟故在製造途中，基板本體由支撐板基材所支撐，所 以不再需要先前薄型化後所需的絕緣膜形成和貫穿電極的 開口，僅需不要求加工精度的單純步驟即可形成由基板本 體背面突出的貫穿電極，減少在製造過程中基板本體發生 破損的機率，提昇半導體裝置製品的良率。 ' 此外’因爲在基板本體背面側設絕緣膜，故在削去背面 側時，電極材料可殘留在基板本體背面而擴散到基板本體 49 312/發明說明書(補件)/92-06/92107728 1223391 內’形成未曾期待的能量順序，而可防止半導體裝 劣化。 此外’因不用支撐板，因此不需要基板本體和支 接合步驟，製造步驟更加簡化。 此外’因爲基板本體本身具有絕緣膜，故不需要 板基材上形成絕緣膜的步驟，不僅能使製造過程更 更能提昇貫穿電極的絕緣性。 此外，依照本發明的半導體裝置之製造方法，因 本體係以S 01晶圓構成，以s 01晶圓所形成的半導 件，比一般的晶圓形成的半導體元件更能快速動作 提供更快速動作的半導體裝置。 此外，依照本發明的半導體裝置之製造方法，因 本體係以極薄的半導體層貼合在絕緣基板上的貼合 晶圓所構成，僅僅如此即可提高基板本體的剛性， 各製造步驟中半成品的處理更加容易。 此外，依照本發明的半導體裝置之製造方法，因 本體係爲TFT基板，故可以比貼合型SOI更簡單更 提供在絕緣基板上具有極薄半導體元件的半導體裝 此外，依照本發明的半導體裝置之製造方法，因 板基材係以金屬構成，而用支撐板基材爲陰極進行 形成貫穿電極，故在孔洞內形成貫穿電極時，不M 壁面上形成作爲電鍍陰極的金屬膜。 此外，依照本發明的半導體裝置之製造方法，医[ 撐板基材表面上沉積金屬的中間膜而形成支撐板， 312/發明說明書(補件)/92-06/92107728 置特性 撐板之 在支撐 簡單， 爲基板 體元 ，故能 爲基板 型SOI 故使得 爲基板 低成本 置。 爲支撐 電鍍而 要在內 爲在支 以前述 50 1223391 中間膜爲陰極用電鍍形成貫穿電極，故在孔洞內形成貫穿 電極時’不需要在內壁面上形成作爲電鍍陰極的金屬膜。 此外’依照本發明的半導體裝置之製造方法，因爲支撐 < 基板，係在將貫穿電極的端面平坦化削去之後以蝕刻消 除，故能使貫穿電極的端部確實從基板本體上突出，同時 也能使通過貫穿電極的其他電子元件之間的電氣結合性提 高。 此外’依照本發明的半導體裝置之製造方法，因爲在貫 穿電極快要露出之前停止硏削，之後以蝕刻法削去直到到 ί 達絕緣fl吴爲止，故能使得貫穿電極確實從基板本體上突出。 此外’依照本發明的半導體裝置之製造方法，因爲支撐 板基材’可以蝕刻消除，故能使得貫穿電極確實從基板本 體上突出。 此外’依照本發明的半導體裝置之製造方法，因爲接合 係爲陽極接合，故在支撐板基材和基板本體之間並不存在 不同材料，可以蝕刻輕易的形成孔洞。 此外，依照本發明的半導體裝置之製造方法，因爲接著 < 劑係爲聚醯亞胺樹脂聚醯亞胺樹脂，故和需要高度技術並 且施工成本高的陽極接合相比較，可減低製作成本。 此外’依照本發明的半導體裝置之製造方法，因爲支撐 板基材係以矽晶圓構成，中間膜以鋁構成，而絕緣膜以氧 · 化砂膜構成，這些材料都是現在半導體製造步驟中一般所 · 使用的材料，因此加工技術也高度成熟，使用已經確實安 定的材料，故不但能提昇製品的良率，也能減低製造成本。 312/發明說明書(補件)/92-06/92107728 51 1223391 此外，依照本發明的半導體裝置之製造方法，因爲支撐 板基材係以鋁構成，是現在半導體製造步驟中一般所使用 的材料，因此加工技術也高度成熟，使用已經確實安定的 材料，故不但能提昇製品的良率，也能減低製造成本。 此外，依照本發明的電子機器，係以上述記載半導體裝 置之任一製造方法所製造的多個半導體裝置互相以突起電 極連接而沉積構成，故能獲得高度集中、高功能的電子機 器。 此外，依照本發明的電子機器，因爲係以上述記載半導 體裝置之任一製造方法所製造的半導體裝置的至少其中一 面上，至少在貫穿電極或者突起電極的其中之一上載放有 被動元件的電路基板連接所構成，故比一般所謂的混合形 ic更能小型化。 此外，依照本發明的電子機器，因爲係以上述記載半導 體裝置之任一製造方法所製造的半導體裝置的兩面，至少 由連接於貫穿電極或突起電極的其中之一的第一電路基板 和第二電路基板所夾住構成，故爲立體接觸構造，可獲得 自由度更高、更高度集中化的電子機器。 此外，依照本發明的電子機器，係將上述記載半導體裝 置之任一製造方法所製造的半導體裝置埋入電路基板的板 芯中，形成在電路基板兩面上的配線至少連接於貫穿電極 或者突起電極的其中之一而構成，故爲立體接觸構造，可 獲得自由度更高、更高度集中化的電子機器。而且有配線 延遲減少的效果。 52 312/發明說明書(補件)/92-06/92107728 1223391 此外，依照本發明的半導體裝置，因爲在構成所定功 的電路元件部形成在一主面上的半導體基板上，具有從β 路形成面到達電路形成面反面側的貫穿孔，沿著該貫穿 具有導電路，具有包圍該導電路周圍的絕緣材料，相鄰@ 前述導電路之間除了該絕緣材料之外並無其他材料介入’ 故能獲得信賴度高的半導體裝置。 此外，依照本發明的半導體裝置，因爲包含下述步驟： 從電路形成面上形成大致垂直延伸貫穿之孔洞的基板本 體；貫穿前述孔洞同時從前述基板本體的兩面中至少一面 上突出端部的貫穿電極；在該貫穿電極週面上形成的貫穿 絕緣膜；以及由前述基板本體突出前述貫穿電極側的基板 本體側面上和前述貫穿絕緣膜成垂直交叉形成的絕緣膜， 故在貫穿電極和基板本體之間，並無基板本體背面露出， 絕緣性上沒有問題，而且絕緣膜也不會覆上貫穿電極的端 面，在貫穿電極上不會發生接合性的問題。 此外，依照本發明的半導體裝置，因爲從基板本體貫 穿’而從基板本體突出端部的貫穿電極的端面，係和基板 本體的電路形成面大致成平行並且平坦的面，故在半導體 裝置互相沉積成電氣接合時，其接合性良好。 【圖式簡單說明】 圖1爲本發明實施形態1的半導體裝置之製造方法中的 製造途中剖面圖。 圖2爲本發明實施形態1的半導體裝置之製造方法中的 製造途中剖面圖。 312/發明說明書(補件)/92-06/92107728 53 1223391 圖3爲本發明實施形態1的半導體裝置之製造方法中的 製造途中剖面圖。 圖4(b)爲本發明實施形態丨的半導體裝置之製造方法中 的製造途中平面圖，圖4 ( a)爲圖4 (b)的沿A - A線的剖面圖。 圖5(b)爲本發明實施形態i的半導體裝置之製造方法中 的製造途中平面圖，圖5 ( a )爲圖5 ( b )的沿B - B線的剖面圖。 圖6(b)爲本發明實施形態1的半導體裝置之製造方法中 的製造途中平面圖，圖6(a)爲圖6(b)的沿C-C線的剖面圖。 圖7爲本發明實施形態1的半導體裝置之製造方法中的 製造途中剖面圖。 圖8(b)爲本發明實施形態1的半導體裝置之製造方法中 的製造途中平面圖，圖8 (a)爲圖8(b)的沿D-D線的剖面圖。 圖9(b)爲本發明實施形態1的半導體裝置之製造方法中 的製造途中平面圖，圖9(a)爲圖9(b)的沿E-E線的剖面圖。 圖10(b)爲本發明實施形態1的半導體裝置之製造方法 中的製造途中平面圖，圖10(a)爲圖10(b)的沿F-F線的剖 面圖。 圖1 1爲本發明實施形態2的半導體裝置之製造方法中的 製造途中剖面圖。 圖1 2爲本發明實施形態2的半導體裝置之製造方法中 的製造途中剖面圖。 圖1 3爲本發明實施形態2的半導體裝置之製造方法中 的製造途中剖面圖。 圖1 4爲本發明實施形態3的半導體裝置之製造方法中 54 312/發明說明書(補件)/92-06/92107728 1223391 的製造途中剖面圖。 圖1 5爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖1 6爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖1 7爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖1 8爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖1 9爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖2 0爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖2 1爲本發明實施形態3的半導體裝置之製造方法中 的製造途中剖面圖。 圖2 2爲本發明實施形態4的半導體裝置之製造方法中 的製造途中剖面圖。 圖2 3爲本發明實施形態4的半導體裝置之製造方法中 的製造途中剖面圖。 圖24爲本發明實施形態4的半導體裝置之製造方法中 的製造途中剖面圖。 圖25爲本發明實施形態4的半導體裝置之製造方法中 的製造途中剖面圖。 圖26爲本發明實施形態4的半導體裝置之製造方法中 55 312/發明說明書(補件)/92-06/92107728 1223391 的製造途中剖面圖。 圖2 7爲本發明實施形態 的製造途中剖面圖。 圖2 8爲本發明實施形態 的製造途中剖面圖。 圖2 9爲本發明實施形態 的製造途中剖面圖。 圖3 0爲本發明實施形態 的製造途中剖面圖。 圖3 1爲本發明實施形態 的製造途中剖面圖。 圖3 2爲本發明實施形態 的製造途中剖面圖。 圖3 3爲本發明實施形態 的製造途中剖面圖。 圖3 4爲本發明實施形態 的製造途中剖面圖。 圖3 5爲本發明實施形態 的製造途中剖面圖。 圖3 6爲本發明實施形態 的製造途中剖面圖。 圖3 7爲本發明實施形態 的製造途中剖面圖。 圖3 8爲本發明實施形態 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 的半導體裝置之製造方法中 312/發明說明書(補件)/92-06/92107728 1223391 的製造途中剖面圖。 圖3 9爲本發明實施形態5的半導體裝置之製造方法中 的製造途中剖面圖。 圖40爲本發明實施形態5的半導體裝置之製造方法中 的製造途中剖面圖。 圖4 1爲本發明實施形態6的半導體裝置之製造方法中 的製造途中剖面圖。 圖42爲本發明實施形態6的半導體裝置之製造方法中 的製造途中剖面圖。 圖4 3爲本發明實施形態6的半導體裝置之製造方法中 的製造途中剖面圖。 圖44爲本發明實施形態7的半導體裝置之製造方法中 的製造途中剖面圖。 圖45爲圖44的重要部分擴大圖。 圖46爲半導體裝置之製造方法中的別之例子的製造途 中剖面圖。 圖47爲本發明實施形態8之電子機器的剖面圖。 圖4 8爲本發明實施形態9之電子機器的剖面圖。 圖49爲本發明實施形態1 0之電子機器的剖面圖。 圖5 0爲本發明實施形態1 1之電子機器的剖面圖。 圖51(a)〜圖51(g)爲本發明實施形態12的半導體裝置 之製造方法的各步驟的圖。 圖52爲圖51的製造方法所製造的半導體裝置重要部分 的剖面圖。 57 312/發明說明書(補件)/92-06/92107728 1223391 圖53(a)〜圖53(g)爲本發明實施形態13的半導體裝置 之製造方法的各步驟的圖。 圖54(a)〜圖54(g)爲本發明實施形態14的半導體裝置 之製造方法的各步驟的圖。 圖55(a)〜圖55(g)爲本發明實施形態15的半導體裝置 之製造方法的各步驟的圖。 圖5 6爲用晶圓的基板本體設置貫穿電極的樣式圖。 圖57爲用SOI晶圓的基板本體設置貫穿電極的樣式圖。 圖58(a)〜圖58(g)爲本發明實施形態16的半導體裝置 之製造方法的各步驟的圖。 圖59(a)〜圖59(g)爲本發明實施形態I?的半導體裝置 之製造方法的各步驟的圖。 圖60爲用Si晶圓構成支撐板基材之情形中形成貫穿電 極的圖。 圖61爲用金屬構成支撐板基材之情形中形成貫穿電極 的圖。 圖62(a)〜圖62(e)爲本發明實施形態18的半導體裝置之 製造方法的各步驟的圖。 圖63(a)〜（g)爲表示先前半導體裝置之製造方法的各步 驟之圖。 (元件符號說明） 1 基板本體 2 電路元件部 3 第一支撐板 58 3Π/發明說明書(補件)/92-06/92107728 1223391 4、1 5、2 5 第一溝部 6、 1 7 絕緣膜 7、 1 6 孔洞 8 金屬配線圖案 9 第二溝部 10 貫穿電極（突起電極） 11 黏著劑 12 第二支撐板 13 探測針 1 4、1 7 絕緣層 20 支撐板 2 1 穴部 22 第一金屬配線圖案 2 3 一突起電極 2 4 絕緣層 27 第二金屬配線圖案 2 8 第二突起電極 30 導電部 3 1 被動元件 32 電路基板 3 3 第一電路基板 3 4 第二電路基板 3 5、3 6 電子元件 40 電路基板 59Incidentally, in the anodic bonding in the previously described embodiment, the material of PSG or BSPSG 28 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 can be used on the surface of the insulating film or the entire insulating film. Next, as shown in FIG. 5 1 (d), the circuit element portion 2 1 1 is etched, which is an etching process for the support plate member 2 1 2 capable of reaching a depth of about 100 // m (fourth step). . Next, as shown in Fig. 51 (e), an insulating film is formed on the inner wall surface of the hole 213, and thereafter a metal film serving as a cathode during plating is deposited on the insulating film. Then, a through electrode 2 1 6 is formed from a conductive material inside the re-hole 2 1 3 by electroplating with the metal film as a cathode. Thereafter, as shown in FIG. 5 1 (f), the support plate 2 1 2 is removed, and the back surface is cut so that the end faces of the intermediate film 2 1 4 and the through electrode 2 1 6 are on the same surface (a fifth step). In this case, the end surface of the through electrode 2 1 6 can be flattened. Finally, as shown in FIG. 51 (g), the intermediate film 214 is completely removed by etching, and a semiconductor device assembly capable of protruding the back electrode 216 from the back surface of the substrate body 210 is manufactured, and the semiconductor device assembly is divided into a plurality of semiconductor devices. (Sixth step). In this step, the etching process is performed only on the intermediate film 2 1 4 and does not reach the insulating film 2 1 5. As a result, the insulating film 2 1 5 can be transferred to the back surface of the substrate body 2 10. Moreover, the etched support plates 2 1 2 and the intermediate film 2 1 4 can be used by selecting materials that can be easily etched. In the semiconductor device manufactured by the above steps, the substrate body 2 1 0 is supported by the support plate 2 1 2 during the manufacturing process. Therefore, the insulating film formed after the thinning required in the prior art and the openings through the electrodes are formed. No longer needed, only through simple steps that do not require processing accuracy (see Figs. 51 (f) and 51 (g)), the through-electrodes 2 1 6 protruding from the back of the substrate body 210 can be formed, which can reduce The support plate member 2 i 2 29 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 that occurred during the manufacturing step has a chance of breakage, thereby improving the yield of the semiconductor device product. In addition, since the insulating film 2 1 5 is provided on the rear surface side of the substrate body 2 10, when the rear surface side is ground, the electrode material remains on the rear surface of the substrate body and diffuses into the substrate body, forming an order of energy beyond expectations, and It is possible to prevent the deterioration of the characteristics of the semiconductor device. In addition, 'because anodic bonding is used to combine the support plate member 2 12 and the substrate body 2 10, there is no other different kind of material between the support plate member 2 and the substrate body 2, so that the etching is performed. The step of forming the holes 2 1 3 is easier. In addition, the support plate member 21 2 uses si, the intermediate film 2 14 uses A1, and the insulating film 215 uses Si02. These are the technologies generally used in the current semiconductor manufacturing steps. These processing technologies have also been highly mature. Really stable material, so not only can improve product yield, but also reduce costs. FIG. 52 is a cross-sectional view of an important part of a semiconductor device 350 manufactured by the method shown in FIG. 51. FIG. The holes 2 1 3 of the substrate body 2 10 are formed in a direction substantially perpendicular to the circuit formation surface. A through-insulating film 218 is formed on the vertical wall surface of the hole 2 1 3. The penetrating electrode 216 penetrates the hole 213, and even ends of the penetrating electrode 216 protrude therefrom. On the back surface side of the substrate body 2 10, the lower end surface of the penetration electrode 2 1 6 is removed to form an insulating film 2 1 5. This insulating film 2 1 5 intersects the insulating film 218 approximately perpendicularly. In the semiconductor device 3 50 of Embodiment 12, the back surface of the substrate body 2 10 is not exposed between the penetrating electrode 2 16 and the substrate body 2 10, so 3012 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 There is no problem in the insulation property. In addition, the insulating film 2 1 5 does not climb on the end surface of the penetrating electrode 2 1 6, so there is no problem in the bonding property of the penetrating electrode. In addition, the lower end surfaces of the plurality of penetrating electrodes 2 16 penetrating from the substrate body 2 10 are substantially parallel to the circuit-forming surface of the substrate body 210 and have a flat surface, and because of the insulating film from the substrate body 2 1 0 The protruding amount of each of the through electrodes 216 on 2 1 5 is substantially the same, so when the semiconductor devices are deposited on each other and electrically combined, the bonding properties are also quite good. (Embodiment 13) Figures 53 (a) to 53 (g) are diagrams showing the steps of a method for manufacturing a semiconductor device according to a thirteenth embodiment of the present invention. Hereinafter, the manufacturing steps of the semiconductor device will be described with drawings. First, as shown in FIG. 53 (a), a substrate body 210 is manufactured in which a plurality of circuit element portions 211 are arranged, and the circuit element portion 211 has a predetermined function on a circuit formation surface on the surface. In addition, an intermediate film 214 made of an A1 film is formed on the surface of the support plate member 212 made of a silicon wafer (step 1). Next, as shown in FIG. 53 (b), the back surface on the reverse side of the circuit formation surface of the substrate body 210 is honed to a thickness that is thinner than the depth of the holes 2 1 3 formed by the groove engraving in a later step. On the other hand, an A1 film is used to form an intermediate film 2 1 4 on a supporting plate member 2 1 2. On the surface of the intermediate film 2 1 4, an insulating film 220 coated with an adhesive made of polyimide resin is applied. To form a support plate 221 (second step). Thereafter, as shown in FIG. 53 (c), on the supporting plate 221, the substrate body 2 1 10 is honed to be sufficiently thin, and bonded by the above-mentioned method of hardening the adhesive (third step 31 312 / invention specification ( Supplement) / 92-06 / 92107728 1223391 steps). Thereafter, the semiconductor device is manufactured by the steps shown in Figs. 53 (d) to 53 (g), each of which is the same as 51 (d) to 51 (g) described in the twelfth embodiment. In the semiconductor device of this embodiment, a polyimide resin precursor as an adhesive is used instead of the anodic bonding used in the semiconductor device of Embodiment 12. Anode bonding requires a relatively high level of technology, which increases the production cost. However, if polyimide resin is used, the cost of the steps can be reduced. (Embodiment 14) Figures 5 (a) to 54 (g) are diagrams showing the steps of a method for manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. Compared with the manufacturing method of the semiconductor device of Embodiment 12 in this embodiment, the difference is that the intermediate film 2 1 4 is not formed. In other words, the support plate 2 1 7 of Embodiment 12 is an intermediate film. 2 1 4 and the insulating film 2 1 5 are deposited. In contrast, the supporting plate 2 3 0 of Embodiment 14 forms an insulating film 2 1 5 on the supporting plate member 2 1 2. As a result, FIG. 5 4 ( b) The steps from Fig. 54 to (f) are different. Incidentally, in this embodiment, the bonding of the substrate body 2 10 and the support plate member 2 12 is also performed by anodic bonding. In addition, an insulating film is formed on the inner wall surface of the hole 2 1 3 and then deposited on the insulating film. As a metal film for the plating cathode, the metal film is used as the cathode for electroplating to form a through electrode 2 1 6 inside the hole 2 1 3. 32 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 In this embodiment, since the intermediate film 214 is not formed as a benchmark for honing processing, the honing processing inside the substrate body 210 is shown in FIG. 53 As shown in (f), it must be stopped before the 尙 reaches the 15 layer of the insulating film. Therefore, the degree of honing must be controlled only by the size. Although a higher honing accuracy is required, the manufacturing step is simplified because the step of forming the intermediate film 214 is not required. In addition, A1 may be used instead of the Si wafer as the support plate member 2 1 2, so that etching can be performed more easily, and the same effect as that of Embodiment 12 can be obtained. In addition, the back surface of the support plate member 2 1 2 may be honed and stopped at a stage where the penetration electrode 2 1 6 is not exposed on the back surface, and then the support plate member 2 1 2 is completely etched away to make the penetration electrode 2 16 can automatically protrude from the inside of the substrate body 2 10. In this way, the honing accuracy need not be too high. However, the amount of protrusion of each penetrating electrode 2 1 6 from the insulating film 2 1 5 depends very much on the uranium etch depth and the uniformity of the trench etch in FIG. 54 (d). Therefore, the uniformity of each of the protruding amounts is poor and the protrusions are prominent. The flatness on the end surface of the penetrating electrode 2 1 6 is also weak. Incidentally, even if the supporting plate does not form the intermediate film 2 1 4 and the insulating film 2 1 5 at the same time, only the supporting plate member 2 1 2 can produce a semiconductor device having a through electrode. That is, a semiconductor device can be manufactured by the following steps. First, on the surface of the support plate member 2 1 2, polyimide resin and the back surface of the substrate body 210 shown in FIG. 5 1 (b) are adhered, and then polyimide resin 33 312 / Invention Specification (Supplement) ) / 92-06 / 92107728 1223391 Hardened to form an insulating film. Next, a hole 2 1 3 is formed from the circuit formation surface to the support plate member 2 1 2, and a through insulating film is formed on the inner side wall of the hole 2 1 3. Next, a conductive material is buried in the hole 2 1 3 to form a through electrode 2 丨 6. Next, the support plate member 2 1 2 is protruded from the end of the through electrode 2 1 6, and the insulating film 2 2 0 is left and removed. In this way, the manufactured assembly semiconductor device may be divided into a plurality of pieces. (Embodiment 15) Figures 55 (a) to 55 (g) are diagrams showing the steps of a method for manufacturing a semiconductor device according to a fifteenth embodiment of the present invention. Φ Compared with the manufacturing method of the semiconductor device of Embodiment 12 in this embodiment, the difference is that the substrate body is composed of a SOI (Silicon on Insulator) wafer with an embedded oxide film 24 1, and a through In the case of the electrode 2 1 6, no insulation is formed on the inner wall surface of the hole 2 1 3. In this embodiment, machine honing, chemical machine honing, etching, or a combination of these technologies is used to make the substrate body 2 4 0 The total thickness of the back surface reaches a thickness of about several micron, and one side of the buried oxide film 241 is exposed (see FIG. 55 (b)). Thereafter, the substrate body 240 and the support plate member 212 are joined by anodization (see FIG. 55 (c)) to form a hole 213 reaching the support plate member 212 (see FIG. 55 (d)). Next, a metal 'film as a plated cathode is formed on the inner wall surface of the hole 2 1 3 to form a through electrode 216 by plating (see FIG. 55 (e)). Thereafter, the support plate member 2 1 2 is honed until the end surface of the penetrating electrode 2 1 6 is exposed 34 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 (refer to FIG. 55 (f)). Next, the supporting plate member 2 1 2 is completely removed by an etching method to manufacture a semiconductor device assembly (see FIG. 55 (g)), and the assembly is divided to manufacture a semiconductor device. Moreover, the intermediate film 2 1 4 can be formed as needed. In the semiconductor device of this embodiment, since the buried oxide film 2 4 1 of the substrate body 2 40 is equivalent to the insulating film 2 1 5 in Embodiment 12, it is formed on the support plate member 2 1 2 as described below. The steps of the insulating film 2 1 5 can be omitted. Therefore, not only the manufacturing steps can be simplified, but also the insulation of the through electrode 2 1 6 can be improved. In addition, because the substrate body 240 is composed of an SOI wafer, and the SOI wafer itself is faster than the previous wafer, the components using through electrodes are connected to each other (deposition mounting) and the transmission circuit is shortened. , Can provide fast-moving electronic machines. Fig. 56 is a diagram when the penetrating electrode 216 is formed when the substrate body 210 is formed with a Si wafer, and Fig. 57 is a diagram when the penetrating electrode 2 16 is formed when the substrate body 240 is formed with an SOI wafer. However, the two figures are clear comparison diagrams between the case where the substrate body 210 is used for comparison and the case where the substrate body 240 is used, and the configurations of the semiconductor devices other than Embodiments 12 and 15 are different. In the case of FIG. 56, since the substrate body 2 10 has conductivity, once an insulating film 2 50 is formed on the inner wall surface of the hole 2 13, a metal film 2 5 1 as a plated cathode is deposited thereon, and then in the hole. A metal is buried inside 2 1 3 to form a through electrode 2 1 6. 35 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 On the other hand, in the case of FIG. 57, the substrate body 240 is composed of an SOI wafer, and the metal film including the circuit element portion 211 of the substrate body 240 is included. 2 5 1 is very thin, and a buried oxide film 2 4 1 is buried as an insulating film in the lower layer, and the lower supporting plate member 212 is finally removed, so the insulating film on the inner wall surface of the hole 2 1 3 is not needed. (Embodiment 16) Figures 58 (a) to 58 (g) are diagrams showing the steps of a method for manufacturing a semiconductor device according to a sixteenth embodiment of the present invention. Compared with the manufacturing method of the semiconductor device of Embodiment 15 in this embodiment, the difference is that the substrate body is replaced by a laminated SOI with an insulating substrate 261 made of an extremely thin semiconductor layer such as quartz glass. 260 SOI wafers. In the semiconductor device of this embodiment, machine honing, chemical machine honing, etching, or a combination of these technologies is used to process the total thickness of the back surface of the substrate body 260 to a predetermined thickness, and then the same as the embodiment i 5 Procedure to make the through electrode 2 1 6 protrude from the back. In this case, the thickness of the insulating base material 261 can be increased until the depth of the uranium cut reaches the limit. Therefore, compared with Embodiment 15, the semi-finished products in each manufacturing step are easier to handle. (Embodiment 17) Figures 59 (a) to 59 (g) are diagrams showing the steps of a method for manufacturing a semiconductor device according to a seventeenth embodiment of the present invention. The difference between this embodiment and the manufacturing method of the semiconductor device in Embodiment 16 is that the difference is that A1 is used instead of the Si wafer as the support substrate 36 312 / Invention Manual (Supplement) / 92-06 / 92107728 Material 2 70 0 In this embodiment, a metal plate is used as the support plate substrate 2 70, and after the holes 2 1 3 are formed, the through electrodes 2 1 6 are formed by plating inside the holes 2 1 3. The insulating film on the inner wall surface of the hole 2 1 3 and the metal film as the plated cathode are no longer needed, and the support plate substrate 270 is used as the cathode to embed the metal in the hole 2 1 3 by electroplating. Fig. 60 is a diagram when the penetrating electrode 2 16 is formed when the support plate member 212 is formed of a Si wafer, and Fig. 61 is a diagram when the penetrating electrode 2 16 is formed when the support plate substrate 270 is formed of a metal. However, the two figures are comparison diagrams of the difference between the case where the support plate member 2 1 2 is used and the case where the support plate base material 270 is used, and the configurations of the semiconductor devices other than Embodiment 16 and Embodiment 17 are different. . In the case of FIG. 60, on the entire surface including the holes 2 1 3, a metal film 251 as a plating cathode must be formed first, and a photoresist 272 is formed to prevent the parts other than the holes 2 1 3 from being plated. In contrast, In the case of FIG. 61, the step of forming the metal film 251 and the photoresist 272 is not required. In addition, a metal intermediate film made of, for example, Cu is three-dimensionally deposited on the surface of the Si wafer to form a support plate, and holes that reach the intermediate film but not the Si wafer are formed, and the intermediate film is used as a cathode to form a through electrode. (Embodiment 18) Figures 62 (a) to 62 (e) are diagrams showing the steps of a method for manufacturing a semiconductor device according to a eighth embodiment of the present invention. Hereinafter, the manufacturing steps of the semiconductor device will be described with reference to the drawings. First, as shown in Fig. 6 2 (a), the substrate body composed of an insulating substrate 2 6 1 attached to an S IO wafer 37 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 2 62 The circuit formation surface of 260 is formed with a circuit element portion 2 1 1 having a predetermined function (first step). Next, as shown in FIG. 62 (b), a hole 2 1 3 having a depth of about 1 0 0 // m is formed from the circuit element portion 21 1 to the insulating base material 2 6 1 by etching (second step). Next, as shown in FIG. 62 (c), the inside of the hole 213 is electroplated, and the through electrode 216 is directly formed without forming an insulating film on the side wall of the hole (third step). Thereafter, as shown in FIG. 62 (d), the back surface of the substrate body 260 is honed until the end surface of the through electrode 216 is exposed (fourth step). Finally, as shown in FIG. 62 (e), the insulating base material 261 is removed by etching to a predetermined thickness, and a semiconductor device assembly protruding through the electrode 216 from the back surface of the substrate body 260 is manufactured, and the semiconductor device assembly is divided into a plurality of pieces. Manufacturing semiconductor devices (fifth step). This semiconductor device shows an example in which a semiconductor device having a penetrating electrode can be manufactured without using a support substrate. Incidentally, in Embodiments 16 to 18 described above, the case where a semiconductor device is manufactured using a substrate body 2 60 composed of an insulating substrate 261 attached to an SOI wafer 262 is described. However, a TFT substrate may be used. Get results. (Effects of the Invention) As described above, the method for manufacturing a semiconductor device according to the present invention includes the following steps: a support plate is attached to the back surface of the substrate body, and the substrate body forms a plurality of components having A circuit element portion having a prescribed function; at least one of the peripheral portion 38 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 of the circuit element portion of the aforementioned board body, or one of the prescribed portions in the circuit element portion, Forming a first groove portion that can reach the support plate; forming a hole through which the support plate can be exposed from the bottom by using an insulating material; forming a metal wiring pattern formed by the circuit element portion The upper electrode portion reaches at least a part of the inner wall of the hole; removes a predetermined amount of the bottom surface of the hole; embeds a conductive material in the hole to form a through electrode so that it can protrude from the circuit forming surface, and protrudes from the circuit forming surface. The peripheral portion of the element portion forms a second groove portion capable of reaching the support plate; and the support plate is removed, and Separated into a plurality of semiconductor devices, it does not let in the middle of manufacturing a substrate thinner and more easily processed, it is possible to easily manufacture a semiconductor device having the through electrode wear. In addition, according to the method for manufacturing a semiconductor device of the present invention, since the first groove portion is formed in the peripheral portion of the circuit element portion and the second groove portion is formed in the first groove portion, it is easier to manufacture it by machining. In addition, according to the method for manufacturing a semiconductor device of the present invention, since the predetermined amount of the back surface of the substrate body is removed before the substrate body is affixed to the support plate, the holes of the semiconductor substrate can be formed more easily. In addition, according to the method of manufacturing a semiconductor device according to the present invention, since the first groove portion is formed by a dicing saw, the first groove portion can be formed simply and efficiently. In addition, according to the method of manufacturing a semiconductor device of the present invention, since the first groove portion is formed by reactive ion etching, the first groove portion can be formed with a precise size. In addition, according to the method for manufacturing a semiconductor device according to the present invention, when 39 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 is used to form a hole in the first groove portion that reaches the support plate with an insulating material, Since an insulating film is formed on the surface of the semiconductor substrate, it is not necessary to separately provide a step of forming a protective film for the circuit element portion. In addition, the method for manufacturing a semiconductor device according to the present invention uses photosensitive glass or polyimide resin as an insulating material and forms a hole by a photolithography method, so it is compared with an insulating material that does not have a photosensitive property. The manufacturing process can be simplified. In addition, according to the method of manufacturing a semiconductor device of the present invention, since the second groove portion is formed by a dicing saw, the second groove portion can be formed simply and efficiently. In addition, according to the method for manufacturing a semiconductor device according to the present invention, metal particles having a diameter of about 3 to 3 Onm are dispersed in a solution covered with an interfacial active agent, and dispersed ultrafine particles are independently dispersed, and the semiconductor is spin-coated to cover the semiconductor. After firing, the surface of the substrate and the first groove portion and the inside of the hole formed in the first groove portion will be partially eliminated after firing to form a buried metal portion inside the hole. Therefore, the impact on the environment such as wastewater treatment is relatively small. 'And spin coating can also improve the integration of the semiconductor device manufacturing process. In addition, according to the method of manufacturing a semiconductor device according to the present invention, since the conductive material in the hole is buried, the ultrafine metal particles generated by the vapor deposition method in a gas environment are placed on a semiconductor substrate on a stage in a decompression chamber. 'It is carried out by a gas deposition method blowing out from a nozzle facing the hole, so the time required for the embedding step can be reduced as well as item 9 of the scope of the patent application, and no unnecessary material is wasted, and the impact on the environment is less. 40 3 U / Invention Specification (Supplement) / 92-06 / 92107728 1223391 In addition, the method of manufacturing a semiconductor device according to the present invention, because the support plate is a metal plate, and the step of removing the bottom surface of the hole is performed with a rot liquid Etching is performed, so that protrusions and electrodes on the back surface of the semiconductor device can be easily formed. / In addition, according to the method for manufacturing a semiconductor device according to the present invention, since the step of embedding the metal in the hole is performed by electroplating using a support plate as a cathode, compared with electroless electroplating, the growth option is higher, and only the embedding can be selected. Holes, and a wider range of materials can be used. In addition, the method of manufacturing a semiconductor device according to the present invention includes the following steps: a support plate is attached to a back surface of a substrate body, and the substrate body forms a plurality of circuit element portions having a predetermined function on a circuit formation surface on the surface; Forming a first groove portion on the substrate body that can reach the first support plate; forming a hole in the first groove portion that can expose the support plate from the bottom with an insulating material; Steps of forming a metal wiring pattern on at least a part of the inner wall of the hole from the electrode portion; removing a predetermined amount of the bottom surface of the hole; embedding a conductive material 0 to form a through electrode so that the circuit can be formed in the hole by the circuit The surface protrudes; a second groove portion capable of reaching the support plate is formed at the peripheral portion of the circuit element portion; a second support plate is pasted on the circuit formation surface side of the semiconductor substrate; the first support plate is removed; Penetrate the electrode to check the circuit function of the circuit element portion; and remove the second support plate to separate it into Semiconductor devices, so multiple semiconductor devices after the first support plate are removed, because there is a second support plate, it will not be individualized. This alone makes operation easier, and the function of the circuit element section can be easier to check. . 41 312 / Invention Manual (Supplement) / 92-06 / 92107728 1223391 In addition, according to the manufacturing method of the semiconductor device of the present invention, the first groove portion is formed at the peripheral portion of the circuit element portion, and the second groove portion is formed inside the first groove portion. Therefore, a general blade can be used to cut the substrate body. In addition, according to the method for manufacturing a semiconductor device according to the present invention, since a predetermined amount of the bottom surface of the hole is removed, a metal wiring pattern is formed from the electrode portion to the bottom surface of the hole, thereby improving the reliability of electrical connection. In addition, according to the method of manufacturing a semiconductor device of the present invention, two rows of holes are formed in parallel along the first groove portion in the first groove portion between the circuit element portions, and a second groove portion is formed between the two rows of holes. The through electrode of the portion is formed by a common first groove portion, so that the manufacturing steps are simpler and easier to manufacture. In addition, according to the method for manufacturing a semiconductor device according to the present invention, two rows of first groove portions are formed between circuit element portions, one row of holes is formed in each of the first groove portions, and one of the first groove portions extending in two rows is formed in the first groove portion. A second groove is formed between the two, so compared with the method of manufacturing a semiconductor device in the 22nd patent application range, because the second groove is formed on the substrate body, a general blade can be used to cut the substrate body. Compared with item 22 of the patent scope, the rigidity is higher, and the penetrating electrode in the peripheral part can be more protected only by this. In addition, according to the method for manufacturing a semiconductor device of the present invention, since the support plate is affixed to the back surface of the semiconductor substrate by an anodic bonding, it does not require any inferior materials such as an adhesive to intervene, and the tolerance of the drug during manufacturing. Limitations can be reduced. In addition, according to the method for manufacturing a semiconductor device according to the present invention, the substrate 42 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 is bonded between the back surface of the main body and the support plate with a bonding material, and is cured after bonding. And it becomes the insulating layer 'remains on the back surface of the semiconductor substrate even after the support plate is removed', so the material can be directly stabilized to form the insulating layer of the semiconductor device. In addition, according to the method of manufacturing a semiconductor device according to the present invention, since the oxide film is formed on the back surface of the semiconductor substrate before the support plate is attached to the back surface of the semiconductor substrate, the back surface of the semiconductor substrate is electrically and chemically stable. Electrical performance and reliability can be improved. In addition, according to the method of manufacturing a semiconductor device according to the present invention, since the first groove portion is provided inside the circuit element portion, a through-electrode can also be provided outside the peripheral portion of the semiconductor device. In addition, the method for manufacturing a semiconductor device according to the present invention includes the following steps: forming a hole portion in the support plate; inserting electrode material into the hole portion to form a first protruding electrode; forming a first metal wiring pattern to make the first A protruding electrode is connected to a predetermined position on the support plate; the back surface of the substrate body is attached to the support plate with an adhesive material, and the substrate body forms a plurality of circuit element portions having a predetermined function on the circuit formation surface on the surface. ; Forming a first groove portion in the substrate body region between the circuit element portions so that it can reach the insulating layer formed by the aforementioned bonding material in front of the aforementioned first metal wiring pattern; using an insulating material on the surface of the aforementioned semiconductor substrate, Removing the electrode portion of the front circuit element portion to form an insulating film, and forming a hole that can reach the support plate in the first groove portion; forming a second metal wiring pattern so that the electrode portion reaches at least a part of the inner wall of the hole; removing the bottom surface of the hole Insulating layer to expose the first metal wiring pattern; bury a metal in the aforementioned hole to A step of forming a through electrode; a second protruding electrode is provided at a predetermined position of the aforementioned second metal wiring pattern 43 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391; it is provided to reach the supporting plate along the first groove portion The second groove portion is divided into a plurality of semiconductor substrates; and the aforementioned support plate is removed, so that a semiconductor device having a first protruding electrode and a second protruding electrode can be easily manufactured. In addition, according to the method for manufacturing a semiconductor device according to the present invention, the step of forming a cavity in the support plate, and injecting electrode material into the cavity to form the first protruding electrode, or the stipulation of the second metal wiring pattern is eliminated. The step of setting the second protruding electrode at the position, so that the process steps are more simplified. In addition, according to the method of manufacturing a semiconductor device according to the present invention, the second metal wiring pattern is formed after the first metal wiring pattern is exposed by reducing the insulating layer on the bottom surface of the hole, and the electrode portion is connected to the first metal wiring pattern through the hole. Therefore, the step of burying metal in the hole to form a buried through electrode can be reduced. In addition, according to the method for manufacturing a semiconductor device according to the present invention, since the step of forming a bump electrode on the circuit formation surface is included, a semiconductor device having a bump electrode on the circuit formation surface can be easily obtained. In addition, according to the method for manufacturing a semiconductor device of the present invention, since a step of forming a bump electrode on the back surface is included, a semiconductor device having a bump electrode on a circuit formation surface can be easily obtained. In addition, the method for manufacturing a semiconductor device according to the present invention includes the steps of forming a circuit element portion having a predetermined function on the circuit formation surface of the surface, and honing the back surface of the substrate body to a predetermined thickness; Combine the insulating film of the supporting plate formed in the order of the interlayer film and the insulating film on the surface of the substrate of the supporting plate and the back surface of the substrate body after honing; 44 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 A hole reaching the substrate of the support plate is formed on the circuit forming surface to form an insulating film penetrating the inner wall of the hole; a conductive material is buried in the hole to form the penetrating electrode; honing is performed until the intermediate film is exposed, so that The end of the through electrode protrudes; and the step of removing the intermediate film by etching to expose the insulating film, so that during the manufacturing process, the substrate body is supported by the support substrate base material, so the insulation required after the previous thinning is no longer needed The film is formed and the opening through the electrode can be formed from the back of the substrate body by a simple step that does not require processing accuracy. The product yield of the semiconductor device through the electrodes, reducing the probability of breakage of the substrate body in the manufacturing process, enhance. In addition, since an insulating film is provided on the back side of the substrate body, when the back side is cut off, the electrode material can remain on the back side of the substrate body and diffuse into the substrate body, forming an unexpected energy sequence, and preventing deterioration of the characteristics of the semiconductor device. In addition, since the interlayer film of the substrate of the support plate becomes a warning sign when the support plate is cut off, it is possible to stop cutting the support plate before the insulating film, so that an insulating film can be surely formed on the rear surface of the semiconductor device. In addition, the method of manufacturing a semiconductor device according to the present invention includes the steps of forming a circuit element portion having a predetermined function on a circuit formation surface on the surface, and cutting the back surface of the substrate body to a predetermined thickness. ; Bonding the back surface of the substrate body after being cut off to the insulating film of the support plate on which the insulating film is formed on the surface of the substrate of the support plate; forming a hole reaching the substrate of the support plate from the circuit forming surface to form a through hole An insulating film on the side wall; a conductive material is buried in the hole to form the penetrating electrode described above 45 312 / Invention (Supplement) / 92-06 / 92107728 1223391; honing until the intermediate film is exposed to make the penetrating electrode The ends protrude; and the aforementioned interlayer film is etched and removed to expose the aforementioned insulating film. Therefore, during the manufacturing process, the substrate body is supported by the support plate base material, so the insulating film formation and through-electrodes required after the previous thinning are no longer required. The through hole can be formed through a simple step that does not require processing accuracy to form a through electrode protruding from the back of the substrate body. The probability of occurrence of breakage of the substrate body in the manufacturing process, improve the yield of the semiconductor device products. In addition, since an insulating film is provided on the back side of the substrate body, when the back side is cut off, the electrode material can remain on the back side of the substrate body and diffuse into the substrate body, forming an unexpected energy sequence, and preventing deterioration of the characteristics of the semiconductor device. In addition, since the interlayer film of the substrate of the support plate becomes a warning sign when the support plate is cut off, it is possible to stop cutting the support plate before the insulating film, so that an insulating film can be surely formed on the rear surface of the semiconductor device. In addition, since the insulating film also has an adhesive function for bonding the support plate and the substrate body, the bonding step directly becomes the insulating film forming step, and the manufacturing step is further simplified. In addition, the method for manufacturing a semiconductor device according to the present invention includes the steps of forming a circuit element portion having a predetermined function on the circuit formation surface of the surface, and cutting the rear surface of the substrate body to a predetermined thickness. ; Bonding the back surface of the substrate body after being cut off to the insulating film of the support plate on which the insulating film is formed on the surface of the substrate of the support plate; forming a hole reaching the substrate of the support plate from the circuit forming surface to form a through hole An insulating film on the side wall; a conductive material is buried in the aforementioned hole to form the aforementioned through-electrode 46 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391; and the supporting plate substrate is protruded from the end of the through-electrode And the removal step of the insulation film is left, so the substrate body is supported by the support substrate during the manufacturing process, so the insulation film required for the previous thinning and the opening through the electrode are no longer needed, only A simple step that does not require processing accuracy can form a through electrode protruding from the back of the substrate body, reducing the cost of the substrate during the manufacturing process The probability of occurrence of damage, improve the yield of the semiconductor device products. In addition, since an insulating film is provided on the back side of the substrate body, when the back side is cut off, the electrode material can remain on the back side of the substrate body and diffuse into the substrate body, forming an unexpected energy sequence, and preventing deterioration of the characteristics of the semiconductor device. In addition, since the interlayer film of the substrate of the support plate becomes a warning sign when the support plate is cut off, it is possible to stop cutting the support plate before the insulating film, so that an insulating film can be surely formed on the rear surface of the semiconductor device. In addition, because there is no intermediate film on the back surface of the support plate as a cut-off mark, the intermediate film formation step that requires a high degree of cutting-out accuracy can be omitted, and the manufacturing steps can be simplified. In addition, the method for manufacturing a semiconductor device according to the present invention includes the following steps: cutting the back surface of the substrate body having the buried oxide film as an insulating film to a predetermined thickness; and cutting the substrate body after cutting. The back surface of the substrate is bonded to the surface of the substrate of the support plate; the adhesive is hardened to form an insulating film; a hole that can reach the substrate of the substrate is formed from the surface of the substrate body, and a through electrode is formed on the inner side wall of the hole; A step of embedding a conductive material in the aforementioned hole to form the aforementioned through electrode; 47 312 / Instruction of the Invention (Supplement) / 92-06 / 92107728 1223391 a step of removing the end of the aforementioned through electrode and leaving the insulating film behind Therefore, in the manufacturing process, the substrate body is supported by the support plate base material, so the insulation film formation and the electrode openings required after the previous thinning are no longer needed, and the substrate can be formed only by a simple step that does not require processing accuracy. The protruding through electrodes on the back of the body reduce the chance of damage to the substrate body during the manufacturing process and improve the semiconductor Yield opposing article. In addition, since an insulating film is provided on the back side of the substrate body, when the back side is cut off, the electrode material can remain on the back side of the substrate body and diffuse into the substrate body, forming an unexpected energy sequence, and preventing deterioration of the characteristics of the semiconductor device. In addition, since the interlayer film of the substrate of the support plate becomes a warning sign when the support plate is cut off, it is possible to stop cutting the support plate before the insulating film, so that an insulating film can be surely formed on the rear surface of the semiconductor device. In addition, because there is no intermediate film on the back surface of the support plate as a cut-off mark, the intermediate film formation step that requires a high degree of cutting-out accuracy can be omitted, and the manufacturing steps can be simplified. In addition, the method for manufacturing a semiconductor device according to the present invention includes the following steps: cutting the back surface of the substrate body having the buried oxide film as an insulating film to a predetermined thickness; and cutting the substrate body after cutting. The back surface of the substrate is bonded to the surface of the substrate of the support plate; a hole reaching the substrate of the support plate is formed from the surface of the substrate body; a step of embedding a conductive material in the hole to form the through electrode; The substrate protrudes from the end of the through electrode, and the removal step of the insulating film is left. Therefore, in the manufacturing process, the substrate body is made of a supporting plate substrate 48 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 Supported, so the insulating film formation and opening of the through electrode that are required after the previous thinning are no longer needed, and the through electrode protruding from the back of the substrate body can be formed by a simple step that does not require processing accuracy, reducing the number of substrates in the manufacturing process. / The chance of the board body being damaged increases the yield of semiconductor device products. ^ In addition, because an insulating film is provided on the back side of the substrate body, when the back side is cut off, the electrode material can remain on the back side of the substrate body and diffuse into the substrate body, forming an unexpected energy sequence, and preventing deterioration of the characteristics of the semiconductor device . In addition, since the substrate body itself has an insulating film, a step of forming an insulating film on the supporting substrate is not required, which not only simplifies the manufacturing process, but also improves the insulation of the through electrodes. In addition, the method for manufacturing a semiconductor device according to the present invention includes the following steps: cutting the back surface of the substrate body having an embedded oxide film as an insulating film to a predetermined thickness; and forming the surface of the substrate body beyond the foregoing A hole in which an oxide film is buried; a conductive material is buried in the hole to form the through electrode; and a step of removing the end of the through electrode from the back of the substrate body and exposing the buried oxide film is in manufacturing On the way, the substrate body is supported by the support plate base material, so the insulating film formation and electrode penetration openings required after the previous thinning are no longer needed, and a simple step that does not require processing accuracy can be formed to protrude from the back of the substrate body The penetration electrode reduces the chance of damage to the substrate body during the manufacturing process and improves the yield of semiconductor device products. In addition, because an insulating film is provided on the back side of the substrate body, when the back side is cut off, the electrode material can remain on the back side of the substrate body and diffuse into the substrate body 49 312 / Invention Manual (Supplement) / 92-06 / 92107728 1223391 The internal formation of an unexpected energy sequence prevents the deterioration of the semiconductor package. In addition, since a support plate is not used, the substrate body and the support bonding step are not required, and the manufacturing steps are simplified. In addition, since the substrate body itself has an insulating film, the step of forming an insulating film on the substrate of the substrate is not required, and the manufacturing process can further improve the insulation of the through electrodes. In addition, according to the method for manufacturing a semiconductor device according to the present invention, since the system is constituted by an S 01 wafer, and a semiconductor formed by an s 01 wafer, the semiconductor element formed by the general wafer can move faster and provide faster speed than a semiconductor element formed by a general wafer. Operating semiconductor device. In addition, according to the method for manufacturing a semiconductor device of the present invention, since this system is composed of a bonded wafer with an extremely thin semiconductor layer bonded to an insulating substrate, the rigidity of the substrate body can be improved only by this, and the semi-finished product in each manufacturing step Processing is easier. In addition, according to the method for manufacturing a semiconductor device according to the present invention, since this system is a TFT substrate, a semiconductor device having an extremely thin semiconductor element on an insulating substrate can be provided more simply and more easily than a bonded SOI. In addition, the semiconductor device according to the present invention In the manufacturing method, since the plate base material is made of metal and the supporting plate base material is used as a cathode to form a through electrode, a metal film as a plated cathode is not formed on the wall surface when a through electrode is formed in a hole. In addition, according to the method for manufacturing a semiconductor device of the present invention, a metal substrate is deposited on the surface of the substrate of the supporting plate to form a supporting plate. 312 / Invention Specification (Supplement) / 92-06 / 92107728 The support is simple, and it is a substrate voxel, so it can be a substrate-type SOI, so it can be installed at a low cost for the substrate. In order to support electroplating, it is necessary to form a through-electrode for electroplating by supporting the aforementioned 50 1223391 interlayer film as a cathode. Therefore, when forming a through-electrode in a hole, it is not necessary to form a metal film as a plating cathode on the inner wall surface. In addition, the method of manufacturing a semiconductor device according to the present invention < The substrate is removed by etching after flattening the end surface of the penetrating electrode, so that the end of the penetrating electrode can surely protrude from the substrate body, and at the same time, the electrical connection between other electronic components passing through the penetrating electrode can be achieved. Improved bonding. In addition, according to the method of manufacturing a semiconductor device according to the present invention, because the through-electrode is stopped before the through-electrode is exposed, and then removed by etching until it reaches the insulation fl, the through-electrode can surely protrude from the substrate body. In addition, according to the "method of manufacturing a semiconductor device according to the present invention, since the support plate base material" can be removed by etching, the through electrode can surely protrude from the substrate itself. In addition, according to the method of manufacturing a semiconductor device of the present invention, since the bonding system is anodic bonding, there are no different materials between the support plate base material and the substrate body, and holes can be easily formed by etching. In addition, the method for manufacturing a semiconductor device according to the present invention, because < The agent is a polyimide resin, which is a polyimide resin, which can reduce the production cost compared with anodic bonding which requires high technology and high construction cost. In addition, according to the method of manufacturing a semiconductor device according to the present invention, since the support substrate is composed of a silicon wafer, the intermediate film is composed of aluminum, and the insulating film is composed of an oxide and sand film, these materials are now used in semiconductor manufacturing steps. Generally used materials, so the processing technology is also highly mature, using materials that are already stable, so it can not only improve the yield of products, but also reduce manufacturing costs. 312 / Invention Manual (Supplement) / 92-06 / 92107728 51 1223391 In addition, according to the manufacturing method of the semiconductor device of the present invention, the base material of the support plate is made of aluminum, which is a material generally used in semiconductor manufacturing steps now. Therefore, the processing technology is also highly mature, using materials that are already stable, so it can not only improve the yield of products, but also reduce manufacturing costs. In addition, according to the electronic device of the present invention, a plurality of semiconductor devices manufactured by any one of the semiconductor device manufacturing methods described above are connected to each other by a protruding electrode and deposited, so that a highly concentrated and highly functional electronic device can be obtained. In addition, according to the electronic device of the present invention, a circuit of a passive element is placed on at least one of the penetrating electrode or the protruding electrode on at least one side of the semiconductor device manufactured by any one of the manufacturing methods of the semiconductor device described above. Due to the substrate connection, it can be more compact than the so-called hybrid IC. In addition, according to the electronic device of the present invention, both sides of the semiconductor device manufactured by any one of the manufacturing methods of the semiconductor device described above include at least a first circuit board and a second circuit board connected to one of a through electrode or a protruding electrode. The circuit board is sandwiched, so it has a three-dimensional contact structure, and it is possible to obtain electronic equipment with higher degrees of freedom and higher concentration. In addition, the electronic device according to the present invention embeds a semiconductor device manufactured by any of the semiconductor device manufacturing methods described above into a core of a circuit board, and wirings formed on both sides of the circuit board are connected to at least a through electrode or a protruding electrode. It has a three-dimensional contact structure and can obtain electronic equipment with higher degrees of freedom and higher concentration. It also has the effect of reducing wiring delay. 52 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 In addition, according to the semiconductor device of the present invention, since the circuit element portion constituting a predetermined power is formed on a semiconductor substrate on a main surface, it has a β-channel formation. The through-holes on the opposite side of the circuit formation surface, along which there is a conducting circuit, with an insulating material surrounding the surrounding of the conducting circuit. There is no other material intervening between the adjacent @mentioned conducting circuits except the insulating material. A highly reliable semiconductor device can be obtained. In addition, the semiconductor device according to the present invention includes the following steps: forming a substrate body having a hole extending substantially perpendicularly from the circuit formation surface; penetrating the hole while projecting an end portion penetration from at least one of the two surfaces of the substrate body; An electrode; a through-insulating film formed on the peripheral surface of the through-electrode; and an insulating film formed by the substrate body protruding from the substrate body side of the through-electrode side perpendicularly to the through-insulating film, so the through-electrode and the substrate body In the meantime, no back surface of the substrate body is exposed, and there is no problem in terms of insulation, and the end face of the penetrating electrode is not covered by the insulating film, and no problem of adhesion occurs in the penetrating electrode. In addition, according to the semiconductor device of the present invention, since the end face of the penetrating electrode which penetrates from the substrate body and protrudes from the substrate body is substantially parallel and flat with the circuit formation surface of the substrate body, the semiconductor devices are deposited on each other. When it is electrically connected, the jointability is good. [Brief Description of the Drawings] FIG. 1 is a cross-sectional view during manufacturing in the method of manufacturing a semiconductor device according to the first embodiment of the present invention. Fig. 2 is a cross-sectional view during manufacturing in the method of manufacturing a semiconductor device according to the first embodiment of the present invention. 312 / Invention Specification (Supplement) / 92-06 / 92107728 53 1223391 FIG. 3 is a cross-sectional view during manufacturing in the method of manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 4 (b) is a plan view during the manufacturing process of the semiconductor device manufacturing method according to the embodiment of the present invention, and FIG. 4 (a) is a sectional view taken along line A-A in FIG. 4 (b). Fig. 5 (b) is a plan view during the manufacturing process of the semiconductor device manufacturing method according to the embodiment i of the present invention, and Fig. 5 (a) is a sectional view taken along the line B-B in Fig. 5 (b). Fig. 6 (b) is a plan view during the manufacturing process of the semiconductor device manufacturing method according to the first embodiment of the present invention, and Fig. 6 (a) is a sectional view taken along the line C-C in Fig. 6 (b). Fig. 7 is a cross-sectional view during manufacture in the method of manufacturing a semiconductor device according to the first embodiment of the present invention. Fig. 8 (b) is a plan view during the manufacturing process of the semiconductor device manufacturing method according to the first embodiment of the present invention, and Fig. 8 (a) is a sectional view taken along the line D-D in Fig. 8 (b). Fig. 9 (b) is a plan view during the manufacturing process of the semiconductor device manufacturing method according to the first embodiment of the present invention, and Fig. 9 (a) is a sectional view taken along the line E-E of Fig. 9 (b). Fig. 10 (b) is a plan view during the manufacturing process in the method of manufacturing a semiconductor device according to the first embodiment of the present invention, and Fig. 10 (a) is a sectional view taken along the line F-F in Fig. 10 (b). FIG. 11 is a cross-sectional view during manufacturing in the method of manufacturing a semiconductor device according to the second embodiment of the present invention. Fig. 12 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the second embodiment of the present invention. Fig. 13 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the second embodiment of the present invention. FIG. 14 is a cross-sectional view during the manufacturing process of 54 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 in the method of manufacturing a semiconductor device according to Embodiment 3 of the present invention. Fig. 15 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. FIG. 16 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. Fig. 17 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. FIG. 18 is a cross-sectional view during manufacturing in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. FIG. 19 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. Fig. 20 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. Fig. 21 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the third embodiment of the present invention. Fig. 22 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the fourth embodiment of the present invention. Fig. 23 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the fourth embodiment of the present invention. Fig. 24 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the fourth embodiment of the present invention. Fig. 25 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the fourth embodiment of the present invention. FIG. 26 is a sectional view in the middle of manufacturing method 55 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 in the method for manufacturing a semiconductor device according to the fourth embodiment of the present invention. Fig. 27 is a cross-sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 28 is a cross-sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 29 is a cross-sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 30 is a sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 31 is a cross-sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 32 is a cross-sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 33 is a cross-sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 34 is a sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 35 is a sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 36 is a sectional view during the manufacturing process according to the embodiment of the present invention. Fig. 37 is a sectional view during the manufacturing process according to the embodiment of the present invention. FIG. 38 shows a semiconductor device manufacturing method in a semiconductor device manufacturing method in a semiconductor device manufacturing method in a semiconductor device manufacturing method in a semiconductor device manufacturing method in a semiconductor device manufacturing method according to an embodiment of the present invention. Of the semiconductor device manufacturing method of the semiconductor device manufacturing method of the semiconductor device manufacturing method of the semiconductor device manufacturing method of the semiconductor device manufacturing method of the semiconductor device / 92-06 / 92107728 1223391 Cross-section view during manufacture. Fig. 39 is a cross-sectional view during the manufacturing process in the method of manufacturing a semiconductor device according to the fifth embodiment of the present invention. Fig. 40 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the fifth embodiment of the present invention. Fig. 41 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the sixth embodiment of the present invention. Fig. 42 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the sixth embodiment of the present invention. Fig. 43 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the sixth embodiment of the present invention. Fig. 44 is a sectional view in the middle of manufacturing in the method of manufacturing a semiconductor device according to the seventh embodiment of the present invention. FIG. 45 is an enlarged view of an important part of FIG. 44. Fig. 46 is a cross-sectional view during the manufacture of another example of the method of manufacturing a semiconductor device. Fig. 47 is a sectional view of an electronic device according to an eighth embodiment of the present invention. Fig. 48 is a sectional view of an electronic device according to a ninth embodiment of the present invention. Fig. 49 is a sectional view of an electronic device according to the tenth embodiment of the present invention. Fig. 50 is a sectional view of an electronic device according to Embodiment 11 of the present invention. Figs. 51 (a) to 51 (g) are diagrams showing each step of a method of manufacturing a semiconductor device according to a twelfth embodiment of the present invention. FIG. 52 is a cross-sectional view of an important part of the semiconductor device manufactured by the manufacturing method of FIG. 51. FIG. 57 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 Figs. 53 (a) to 53 (g) are diagrams showing each step of a method of manufacturing a semiconductor device according to a thirteenth embodiment of the present invention. 54 (a) to 54 (g) are diagrams showing steps in a method of manufacturing a semiconductor device according to a fourteenth embodiment of the present invention. 55 (a) to 55 (g) are diagrams showing steps in a method of manufacturing a semiconductor device according to a fifteenth embodiment of the present invention. FIG. 56 is a view showing a pattern in which a through electrode is provided on a substrate body of a wafer. FIG. 57 is a pattern diagram of a through-electrode provided on a substrate body of an SOI wafer. 58 (a) to 58 (g) are diagrams showing each step of a method of manufacturing a semiconductor device according to a sixteenth embodiment of the present invention. 59 (a) to 59 (g) are diagrams showing steps in a method for manufacturing a semiconductor device according to the first embodiment of the present invention. Fig. 60 is a view showing the formation of a through-electrode in the case where a support plate substrate is formed of a Si wafer. Fig. 61 is a view showing the formation of a through-electrode in the case where the supporting plate substrate is made of metal. Figs. 62 (a) to 62 (e) are diagrams showing each step of the method for manufacturing a semiconductor device according to the eighteenth embodiment of the present invention. Figs. 63 (a) to (g) are diagrams showing steps in a conventional method of manufacturing a semiconductor device. (Explanation of component symbols) 1 Substrate body 2 Circuit element portion 3 First support plate 58 3Π / Invention specification (Supplement) / 92-06 / 92107728 1223391 4, 1 5, 2 5 First groove portion 6, 1 7 Insulation film 7 , 1 6 holes 8 metal wiring pattern 9 second groove 10 penetration electrode (protruding electrode) 11 adhesive 12 second support plate 13 detection pin 1 4, 1 7 insulating layer 20 support plate 2 1 cavity 22 first metal wiring pattern 2 3 One protruding electrode 2 4 Insulating layer 27 Second metal wiring pattern 2 8 Second protruding electrode 30 Conductive part 3 1 Passive element 32 Circuit board 3 3 First circuit board 3 4 Second circuit board 3 5, 3 6 Electronic component 40 circuit board 59

312/發明說明書(補件)/92-06/92107728 1223391 4 1 板 50 半 100、 200、 400、 5 00、 8 00、 900 210、 240、 2 11 212、 270 2 13 2 14 2 15 2 16 2 17 2 18 22 1、 230 24 1 25 1 26 1 262 心 導體基板 300 、 350 、 600 、 700 、 260 電路元件部 支撐板構件 孔洞 中間膜 絕緣膜 貫穿電極 支撐板 貫穿絕緣膜 支撐板 埋設氧化膜 金屬膜 絕緣基材 S 01晶圓 半導體裝置 基板本體312 / Instruction for Invention (Supplement) / 92-06 / 92107728 1223391 4 1 Plate 50 Half 100, 200, 400, 5 00, 8 00, 900 210, 240, 2 11 212, 270 2 13 2 14 2 15 2 16 2 17 2 18 22 1, 230 24 1 25 1 26 1 262 Core conductor substrate 300, 350, 600, 700, 260 Circuit element part support plate member hole intermediate film insulation film through electrode support plate through insulation film support plate buried oxide film Metal film insulation substrate S 01 wafer semiconductor device substrate body

312/發明說明書(補件)/92-06/92107728 60312 / Invention Specification (Supplement) / 92-06 / 92107728 60

Claims (1)

1223391 ι·一種半導體裝置之製造方法，包含下述步驟： 在基板本體的背面貼上支撐板，該基板本體係在表面的 電路形成面上形成多個具有所規定功能的電路元件部； 至少在前述基板本體的電路元件部的週邊部或者電路 元件部內的所規定部分的其中之一上，形成能到達前述支 撐板上的第一溝部； 採用絕緣材料，在前述第一溝部上形成能使支撐板從該 底部露出的孔洞； 形成金屬配線圖案，該金屬圖案係由形成在前述電路元 件部上的電極部到達前述孔洞的至少一部分內壁上； 將前述孔洞底面去除所規定量； 將導電材料埋設入於前述孔洞內而形成貫穿電極，使其 得以由前述電路形成面突出， 在前述電路元件部週邊部形成能到達前述支撐板的第 二溝部；以及 去除前述支撐板，藉以分離成多個半導體裝置。 2 .如申請專利範圍第1項之半導體裝置之製造方法，其 中在電路元件部的週邊部形成第一溝部，而在第一溝部內 形成第二溝部。 3 .如申請專利範圍第1項之半導體裝置之製造方法，其 中在使用絕緣材料，在第一溝部形成到達支撐板上的孔洞 時，同時在半導體基板表面形成絕緣膜。 4.如申請專利範圍第1至3項中任一項之半導體裝置之 61 312/發明說明書(補件)/92-〇6/92斯728 1223391 製造方法，其中孔洞內的金屬埋設，係 用電鍍法來進行。 5.—種半導體裝置之製造方法，包含 在基板本體的背面貼上支撐板，該基板 路形成面上形成多個具有所規定功能的 在前述基板本體上形成能到達前述第 溝部； 採用絕緣材料，在前述第一溝部上形 底部露出的孔洞； 形成金屬配線圖案，該金屬圖案係由 件部上的電極部到達前述孔洞的至少一 將前述孔洞底面去除所規定量； 將導電材料埋設入於前述孔洞內而形 得以由前述電路形成面突出； 在前述電路元件部週邊部，形成能到 二溝部； 在前述半導體基板的電路形成面側貼 去除前述第一支撐板； 以探針接觸前述貫穿電極以檢查電路 能；以及 去除第二支撐板，藉以分離成多個半 6 ·如申請專利範圍第1項之半導體裝 中以陽極結合將支撐板貼在半導體基板 7 ·如申請專利範圍第1項之半導體裝 312/發明說明書(補件)/92-06/92107728 以支撐板作爲陰極 下述步驟： ， 本體係在表面的電 .， 電路元件部； 一支撐板的第一 成能使支撐板從該 形成在前述電路元 部分內壁上； 成貫穿電極，使其 達前述支撐板的第 上第二支撐板； 元件部的電路功 導體裝置。 置之製造方法，其 ·， 背面上。 置之製造方法，其 62 1223391 中基板本體背面和支撐板之間係以接著材料黏接，黏接後 使其硬化而成爲絕緣層，在去除支撐板之後仍殘留在半導 體基板背面上。 8 ·如申請專利範圍第1項之半導體裝置之製造方法，其 中在將支撐板貼於半導體基板背面之前，先在半導體基板 背面形成氧化膜。 9. 一種半導體裝置之製造方法，包含下述步驟： 在支撐板上形成孔洞部； 在該孔洞部塡入電極材料以形成第一突起電極； 形成第一金屬配線圖案以使第一突起電極和前述支撐 板上所規定位置連接； 採用接著材料將基板本體的背面貼在上述支撐板上，該 基板本體在表面的電路形成面上形成多個具有所規定功能 的電路元件部； 在電路元件部間的基板本體區域中，形成第一溝部，使 其能到達以前述第一金屬配線圖案前面的前述接著材料所 形成的絕緣層； 採用絕緣材料，在前述半導體基板表面上，去除前電路 元件部的電極部以形成絕緣膜，並在前述第一溝部形成能 到達支撐板的孔洞； 形成第一金屬配線圖案，使電極部到達前述孔洞的至少 一部分內壁； 去除前述孔洞底面.的絕緣層，使第一金屬配線圖案露 出； 63 312/發明說明書(補件)/92-06/92107728 1223391 在前述孔洞中埋設金屬以形成貫穿電極； 在前述第二金屬配線圖案的所規定位置上設置第二突 起電極； 沿前述第一溝部到達前述支撐板設置第二溝部，分割成 多個半導體基板；以及 去除支撐板。 ίο·—種半導體裝置之製造方法，係以貫穿電極貫穿基板 本體者，其包含下述步驟： 在表面的電路形成面上，形成具有所規定功能的電路元 件部，將前述基板本體的背面硏磨成所規定的厚度； 將在支撐板基材表面以中間膜和絕緣膜的順序形成的 支撐板的絕緣膜，和硏磨過的前述基板本體的背面結合； 形成由前述電路形成面到達前述支撐板基材的孔洞，形 成貫穿孔洞內側壁的絕緣膜； 在前述孔洞內埋設導電性材料以形成前述貫穿電極； 硏磨到前述中間膜露出爲止，而使前述貫穿電極的端部 突出；以及 以蝕刻去除前述中間膜使得前述絕緣膜露出。 1 1 · 一種半導體裝置之製造方法，係以貫穿電極貫穿基板 本體者，其包含下述步驟： 在表面的電路形成面上，形成具有所規定功能的電路元 件部，將前述基板本體的背面削去而成所規定的厚度； 將削去後的前述基板本體的背面，接合在支擦板基材表 面形成有絕緣膜的支撐板的絕緣膜上； 64 312/發明說明書(補件)/92-06/92107728 1223391 形成由前述電路形成面到達前述支撐板基材的孔洞，形 成貫穿孔洞內側壁的絕緣fi旲， 在前述孔洞內埋設導電性材料以形成前述貫穿電極；以 及 使前述貫穿電極的端部突出’並且留下前述絕緣膜而去 除前述支撐板基材。 12.—種半導體裝置之製造方法，係以貫穿電極貫穿基板 本體者，其包含下述步驟： 將具有作爲絕緣膜的埋設氧化膜的前述基板本體的背 面削去而成所規定的厚度； 將削去後的前述基板本體的背面，接合在支撐板基材表 面上； 形成由前述基板本體的表面能到達前述支撐板基材的 孔洞； 在前述孔洞內埋設導電性材料以形成前述貫穿電極；以 及 使前述貫穿電極的端部突出，並且留下前述絕緣膜而去 除前述支撐板基材。 1 3 . —種電子機器，係以申請專利範圍第1至1 2項中任 一項記載的半導體裝置之製造方法所製造的多個半導體裝 置互相以突起電極連接而沉積構成。 1 4. 一種電子機器，係以申請專利範圍第1至1 2項中任 一項記載的半導體裝置之製造方法所製造的半導體裝置的 其中一面上，連接有電路基板所構成，該電路基板係至少 65 312/發明說明書(補件)/92-06/92107728 1223391 在貫穿電極或者突起電極的其中之一上載放有被動兀件。 1 5 .—種電子機器，係將申請專利範圍第丨至1 2項中任 一項記載的半導體裝置之製造方法所製造的半導體裝置埋 入電路基板的板芯中，且將形成在電路基板兩面上的配線 至少連接於貫穿電極或者突起電極的其中之一而構成。 66 312/發明說明書(補件)/92-06/921077281223391 ι · A method for manufacturing a semiconductor device, comprising the steps of: affixing a support plate on a back surface of a substrate body; the substrate system forms a plurality of circuit element portions having predetermined functions on a circuit formation surface on the surface; A first groove portion that can reach the support plate is formed on one of a peripheral portion of the circuit element portion of the substrate body or a predetermined portion in the circuit element portion; an insulating material is formed on the first groove portion to enable support. A hole exposed from the bottom of the plate; forming a metal wiring pattern, the metal pattern reaching at least a part of the inner wall of the hole from an electrode portion formed on the circuit element portion; removing a predetermined amount of the bottom surface of the hole; It is embedded in the hole to form a through electrode so that it can protrude from the circuit forming surface, and a second groove portion that can reach the support plate is formed in the peripheral portion of the circuit element portion; and the support plate is removed to separate into a plurality of portions. Semiconductor device. 2. The method of manufacturing a semiconductor device according to item 1 of the patent application, wherein a first groove portion is formed in a peripheral portion of the circuit element portion, and a second groove portion is formed in the first groove portion. 3. The method for manufacturing a semiconductor device according to item 1 of the patent application, wherein an insulating film is formed on the surface of the semiconductor substrate at the same time when a hole reaching the support plate is formed in the first groove portion using an insulating material. 4. For the manufacturing method of 61 312 / Invention Specification (Supplement) / 92-〇6 / 92 斯 728 1223391 of the semiconductor device according to any one of the claims 1 to 3, in which the metal in the hole is buried, it is used Electroplating is performed. 5. A method for manufacturing a semiconductor device, comprising attaching a support plate on a back surface of a substrate body, and a plurality of predetermined functions are formed on the substrate road-forming surface to reach the first groove portion on the substrate body; an insulating material is used; Forming a hole exposed at the bottom of the first groove portion; forming a metal wiring pattern, the metal pattern removing at least one of the holes from the electrode portion on the member portion to a predetermined amount of the bottom surface of the hole; embedding a conductive material in The hole is formed to protrude from the circuit formation surface; a peripheral portion of the circuit element portion is formed to reach the second groove portion; the first support plate is affixed to the circuit formation surface side of the semiconductor substrate; and a probe is used to contact the penetration Electrode to check the circuit performance; and remove the second support plate to separate it into multiple halves6. For example, in the semiconductor device in the scope of patent application No. 1, the support plate is attached to the semiconductor substrate by anodic bonding. Item 312 / Invention Manual (Supplement) / 92-06 / 92107728 with support plate as cathode The following steps: The circuit of the system on the surface, the circuit element part; the first component of a support plate enables the support plate to be formed on the inner wall of the circuit element part; forming a through electrode so that it reaches the support plate. The first and second support plates; the circuit work conductor device of the component part. Place the manufacturing method, which is on the back. In the manufacturing method of 62 1223391, the back surface of the substrate body and the support plate are bonded with an adhesive material. After bonding, the substrate is hardened to become an insulating layer, and remains on the back surface of the semiconductor substrate after the support plate is removed. 8 · The method for manufacturing a semiconductor device according to item 1 of the patent application, wherein an oxide film is formed on the back surface of the semiconductor substrate before the support plate is attached to the back surface of the semiconductor substrate. 9. A method for manufacturing a semiconductor device, comprising the steps of: forming a hole portion in a support plate; inserting electrode material into the hole portion to form a first protruding electrode; forming a first metal wiring pattern such that the first protruding electrode and The substrate is connected at a predetermined position on the support plate; the back surface of the substrate body is adhered to the support plate with an adhesive material, and the substrate body forms a plurality of circuit element portions having a predetermined function on a circuit formation surface on the surface; In the substrate body region between the first grooves, a first groove portion is formed so as to reach the insulating layer formed by the aforementioned bonding material in front of the first metal wiring pattern; using an insulating material, the front circuit element portion is removed on the surface of the semiconductor substrate Forming an insulating film in the electrode portion, and forming a hole in the first groove portion that can reach the support plate; forming a first metal wiring pattern so that the electrode portion reaches at least a part of the inner wall of the hole; removing the bottom surface of the hole, Exposing the first metal wiring pattern; 63 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 A metal is buried in the hole to form a through electrode; a second protruding electrode is provided at a predetermined position of the second metal wiring pattern; a second groove is provided along the first groove to the support plate, and divided into a plurality of semiconductors Substrate; and removing the support plate. ίο · —A method for manufacturing a semiconductor device is a method in which a through electrode penetrates a substrate body, and includes the following steps: forming a circuit element portion having a predetermined function on a circuit formation surface on the surface, and arranging a back surface of the substrate body; Grind to a predetermined thickness; combine the insulating film of the support plate formed in the order of the interlayer film and the insulating film on the surface of the substrate of the support plate with the back surface of the substrate body after honing; form the circuit formation surface to the foregoing Supporting a hole in the substrate of the board to form an insulating film penetrating the inner side wall of the hole; burying a conductive material in the hole to form the penetrating electrode; honing until the intermediate film is exposed so that the end of the penetrating electrode protrudes; and The intermediate film is removed by etching to expose the insulating film. 1 1 · A method for manufacturing a semiconductor device, which uses a penetration electrode to penetrate the substrate body, and includes the following steps: forming a circuit element portion having a predetermined function on a circuit formation surface on the surface, and cutting the back surface of the substrate body To a predetermined thickness; the back surface of the substrate body after shaving is bonded to an insulating film of a support plate having an insulating film formed on the surface of the substrate of the wiper substrate; 64 312 / Invention Specification (Supplement) / 92 -06/92107728 1223391 forming a hole from the circuit formation surface to the substrate of the support plate, forming an insulation fi 贯穿 through the inner wall of the hole, and embedding a conductive material in the hole to form the through electrode; and making the through electrode The end portion protrudes and leaves the aforementioned insulating film to remove the aforementioned supporting plate substrate. 12. A method for manufacturing a semiconductor device, wherein a through electrode penetrates a substrate body, and includes the following steps: a back surface of the substrate body having an embedded oxide film as an insulating film is cut to a predetermined thickness; The back surface of the substrate body after shaving is bonded to the surface of the substrate of the support plate; a hole capable of reaching the substrate of the support plate from the surface of the substrate body is formed; a conductive material is buried in the hole to form the through electrode; And the end portion of the through electrode is protruded, and the insulating film is left to remove the support plate base material. 1 3. An electronic device comprising a plurality of semiconductor devices manufactured by the method for manufacturing a semiconductor device described in any one of claims 1 to 12 in a patent application, which are formed by depositing a plurality of semiconductor devices connected to each other. 1 4. An electronic device comprising a circuit board connected to one side of a semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 12, and the circuit board is At least 65 312 / Invention Specification (Supplement) / 92-06 / 92107728 1223391 Passive element is placed on one of the penetrating electrode or the protruding electrode. 1 5. An electronic device in which a semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 12 is embedded in a core of a circuit board and is formed on the circuit board The wiring on both surfaces is configured to be connected to at least one of a through electrode or a protruding electrode. 66 312 / Invention Specification (Supplement) / 92-06 / 92107728
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JP3829736B2 (en) * 2002-02-28 2006-10-04 凸版印刷株式会社 Manufacturing method of chip size package
TWI272683B (en) * 2004-05-24 2007-02-01 Sanyo Electric Co Semiconductor device and manufacturing method thereof
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WO2009005462A1 (en) * 2007-07-05 2009-01-08 ÅAC Microtec AB Low resistance through-wafer via
KR100887479B1 (en) * 2007-10-09 2009-03-10 주식회사 네패스 Crack resistant semiconduct package and fabrication method thereof
US8168458B2 (en) * 2008-12-08 2012-05-01 Stats Chippac, Ltd. Semiconductor device and method of forming bond wires and stud bumps in recessed region of peripheral area around the device for electrical interconnection to other devices
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US8426946B2 (en) 2010-06-28 2013-04-23 Headway Technologies, Inc. Laminated semiconductor substrate, laminated chip package and method of manufacturing the same
US8426948B2 (en) 2010-08-02 2013-04-23 Headway Technologies, Inc. Laminated semiconductor wafer, laminated chip package and method of manufacturing the same
US8552534B2 (en) 2011-11-01 2013-10-08 Headway Technologies, Inc. Laminated semiconductor substrate, semiconductor substrate, laminated chip package and method of manufacturing the same
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