TWI222842B - Device and method to increase the color saturation of polymer OLED - Google Patents

Device and method to increase the color saturation of polymer OLED Download PDF

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TWI222842B
TWI222842B TW92109657A TW92109657A TWI222842B TW I222842 B TWI222842 B TW I222842B TW 92109657 A TW92109657 A TW 92109657A TW 92109657 A TW92109657 A TW 92109657A TW I222842 B TWI222842 B TW I222842B
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layer
light
cathode
conductive substrate
color saturation
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TW92109657A
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TW200423810A (en
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Shu-Wen Jang
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Wintek Corp
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Abstract

A device and method to increase the color saturation of polymer OLED are disclosed, which is mainly to fabricate a cathode conductive substrate with patterned cathode layer, then dispose light-emitting material on the cathode conductive substrate. Fabricate the hole transport layer to control the overall thickness, anode layer sequentially. Next, dispose an interference film of semi-transparent film and passivation layer. The said semi-transparent interference layer and the cathode form a resonant interval, so that light wave can be resonant and interfere in this interval. The specific light wave is intensified and concentrated in this resonant interval, so as to obtain an emission panel with high intensity and single wavelength. At the same time, by adjusting the spacing between the semi-transparent interference layer, the required color light specifically can be obtained.

Description

1222842 __索號 92109657 _年月日___ 五、發明說明(1) 【發明所屬之技術領域】 本發明係一種增加高分子有機發光二極體元件色飽和 度之裝置及方法,係應用於顯示器產業中全彩化之製作。 【先前技術】 由於有機發光二極體(Organic light emitting diode ; 0LED)具備自發光、厚度薄、反應速度快、視角 廣、解析度佳、高亮度、可用於撓曲性面板及使用溫度範 圍廣等多項優點,被認為係繼薄膜型液晶顯示器(Th i η film transistor liquid crystal display ; TFT-LCD) 為新一代之平面顯示器技術,而該有機發光二極體( 0LED )的發光原理是利用材料的特性,將電子電洞在發光 層上結合,產生的能量將發光分子由基態提昇至激發態, 電子由激發態降回基態時,其能量以電磁波的形式釋出, 因而達到有不同波長的發光元件的產生。其中陽極( Anode)為銦錫氧化物(indium Tin Oxide ;IT0)之導電玻 璃膜’以濺鍍或蒸鍍方式,附著於玻璃或透明塑膠基板上 ,陰極則含有鎂(Mg )、鋁(Α1 )、鋰(Li )、鈣(Ca ) 等金屬’在二個電極間則是多個有機薄膜形成的發光區 域’包含電洞注入層(Hole injection layer ;HIL)電 洞傳遞層(Hole Transport Layer ;HTL)有機發光層( Emitting layer)及電子傳遞層(Electr〇ri Transport1222842 __ 索 号 92109657 _ 年月 日 ___ V. Description of the invention (1) [Technical field to which the invention belongs] The present invention is a device and method for increasing the color saturation of a polymer organic light emitting diode element, which is applied to Full-color production in the display industry. [Previous technology] Because organic light emitting diodes (OLEDs) have self-light emitting, thin thickness, fast response speed, wide viewing angle, good resolution, high brightness, can be used for flexible panels and a wide temperature range Many advantages such as thin film liquid crystal display (TFT-LCD) are considered to be the new generation of flat display technology, and the light emitting principle of the organic light emitting diode (0LED) is to use materials The characteristics of the electron hole are combined on the light-emitting layer, and the energy generated raises the light-emitting molecule from the ground state to the excited state. When the electron drops from the excited state back to the ground state, its energy is released in the form of electromagnetic waves, thus achieving different wavelengths. Generation of light-emitting elements. The anode (Anode) is a conductive glass film of indium tin oxide (IT0), which is attached to a glass or transparent plastic substrate by sputtering or evaporation. The cathode contains magnesium (Mg), aluminum (Α1) ), Lithium (Li), calcium (Ca) and other metals 'are light emitting regions formed by multiple organic thin films between the two electrodes' including a hole injection layer (HIL) hole transport layer (Hole Transport Layer (HTL) organic emitting layer (Emitting layer) and electron transport layer (Electrori Transport

Layer ; ETL),在實際應用量產時,基於不同需求考量, 有時還會包含其他不同薄膜。 有機發光二極體依其使用之有機發光層材料同,(Layer; ETL). In actual application for mass production, based on different needs and considerations, sometimes different films are included. Organic light-emitting diodes have the same materials as the organic light-emitting layer.

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Light Emitting Diode ; OLED)及以共軛性高分子為主的 同为子有機發光二極體(Pl〇ymer Light Emitting Diode ;PLED),就材料的取得而言,小分子材料的合成與純化 皆較高分子簡單,對材料量產與純度的要求較易達成,相 對而言小分子的材料特性較高分子易掌握,但就熱穩定性 與機械性質而言卻以高分子較佳。 以發光元件而言,有兩項重要物理性質,一是發光的 月匕量效率(Energy Efficiency),另一是發光的量子效 率(Quantum Efficiency),發光能量效率的定義為在元 件中輸入的電能與產生發光能量之比值;發光量子效率的 定義則為一個電洞能放出幾個光子的比值,換言之即為電 轉換成光的效率。 高分子有機發光二極體(PLED)元件材料由於分子量 分布不易控制,色飽和度一般來說較小分子有機發光二極 艘(0LED)元件差,因為光色的不純,因此高分子有機發 光二極體(PLED)元件在全彩化的應用上較為不利。 【發明内容】 本發明之主要目的,在於解決上述之缺失,避免缺失 的存在’本發明係在既定高分子電激發光元件結構下,利 用該共振腔的物理特性來增加特定波長的外部量子效率( external quantum efficiency),並同時提高元件色飽 和度,亦利用光學之干涉原理來調變光色。又共振腔為干 涉調整主光色時會有倍頻的問題,如300、6〇〇、9〇〇 nm皆 會有發射光產生,此時,可利用其上方之干涉膜限制其主 光色波長,例如只有6 0 0 nm的發射光可射出。Light Emitting Diode; OLED) and isomeric organic light-emitting diodes (PlOymer Light Emitting Diode; PLED) based on conjugated polymers. In terms of material acquisition, both small molecule materials are synthesized and purified. Higher molecules are simple, and the requirements for mass production and purity of materials are easier to achieve. Relatively speaking, the material properties of small molecules are higher. The molecules are easier to grasp, but in terms of thermal stability and mechanical properties, polymers are better. For light-emitting elements, there are two important physical properties. One is the luminous energy efficiency and the other is the quantum efficiency. The luminous energy efficiency is defined as the electrical energy input into the element. The ratio of energy to light emission. The quantum efficiency of light emission is defined as the ratio of several photons that a hole can emit, in other words, the efficiency of electrical conversion into light. Polymer organic light emitting diode (PLED) element materials are not easy to control due to their molecular weight distribution. Generally speaking, smaller molecular organic light emitting diode (0LED) elements are inferior because of the impure light color. Polar body (PLED) elements are disadvantageous in full-color applications. [Summary of the invention] The main purpose of the present invention is to solve the above-mentioned shortcomings and avoid the existence of the missings. 'The present invention uses the physical characteristics of the resonant cavity to increase the external quantum efficiency of a specific wavelength under a given structure of a polymer electrically excited optical element. (External quantum efficiency), and at the same time improve the color saturation of the device, also use the optical interference principle to adjust the light color. There is also a problem of frequency doubling when the resonant cavity adjusts the main light color for interference. For example, 300, 600, and 900 nm will emit light. At this time, the interference light above it can be used to limit the main light color. At a wavelength, for example, only 600 nm of emitted light can be emitted.

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案號 92109657 五、發明說明(3) 在製程上本發明採用一般之全彩高分子電激發光面 ,並以沉積之方式製作干涉層,該干涉層係制光丘择, 理來增強光波,系、在透明基板—側交互重叠兩介 ^原 :透鏡,㈣其與陰極之間形成共振區間,當光波在= 間内反覆之共振:涉,肖定波長的光波將在此共振腔内ς 加強與集中,可得到高強度的單一波長射出面板其 該半透鏡係利肖二帛+同折w率之物質做反覆沉積複居 之製作,使光波能在陰極與半透鏡間做 度之共振腔可共振得到不同光色,因此可以對全彩= 各光色做一調整與補強。 【實施方式】 有關本發明之詳細說明及技術内容,現配合圖式說明 如下: 請參閱『第1圖所示』,係本發明之裝置示意圖,如 圖所不·包括有一陰極導電基板1〇,該陰極導電基板1 〇 陰極層已圖案化之導電基板,並設置一陰極間之隔離壁 ,一位於上述陰極導電基板1〇上之發光層2〇,該發光層2〇 係為聚乙烯咔唑(PVK)摻雜有機染料或聚努高分子( polyfluorene)之高分子有機發光層2〇,又於該發光層2〇 上設置一電洞傳輸層3〇,再於電洞傳輸層3〇上設置一陽極 層40 ’於該陽極層4G上設置半透明膜干涉層5(),該半透明 用兩種折射率不同之物質,反覆蒸錢6至 100層该兩種折射率不同之物質,最後於該 層50上設置一保護層6〇。 处、卞以 發明^1用光干涉的土理將光源發出的光色做調 第7頁 1222842 _案號92109657_年月曰 修正_ 五、發明說明(4) 整,得到更高效率的發光,並可藉由干涉層的間距調整, 調整發光波長,以得到面板所需要之高飽和度特定光色, 同時提高該色光之外部發光效率。 下表係本發明針對發紅色(R )、綠色(G )、藍色 (B )之畫素,使用二氧化鈦(T I 0 2 )與二氧化矽(S I 02 )作為半透明膜干涉層50之一實施層數與厚度表: 畫素發光色 單位 畫素發光色 單位 畫素發光色 單位 紅色 埃(A) 綠色 埃(A) 藍色 埃(人) TI02 61.33 SI02 86.9 SI02 439.92 SI02 58.98 TI02 87 TI02 79.38 TI02 47.75 SI02 129 SI02 126.39 S102 105.83 TI02 58.3 TI02 77.32 TI02 69.39 SI02 101 SI02 140.43 SI02 82.62 TI02 8S TI02 81.93 TI02 48.11 SI02 104 SI02 131.68 S102 88.31 Ή02 59.8 TI02 70.31 TI02 63.51 SI02 100 SI02 120.98 SI02 106.96 TI02 96.5 TI02 66.24 TI02 51.47 SI02 92.6 SI02 127.83 SI02 84.05 ΤΪ02 53.4 TI02 161.71 TI02 47.61 SI02 69.5 SI02 127.29 SI02 83.26 丁 102 27.7 TI02 65.43 TI02 42.36 SI02 55.2 SI02 129 SI02 30.58 T102 41.5 TI02 162.19 TI02 44.98 SI02 59.8 SI02 127.98 S102 87.6 TI02 45.5 ΤΙΘ2 77.4 TI02 50.94 SI02 79.8 SI02 468.7 SI02 82.1 丁 102 44.3 TI02 9.68 TI02 34.65 SI02 14.6 SI02 102.92 TI02 51 總厚度 1372.39 總厚度 1547 總厚度 2894.71Case No. 92109657 V. Description of the invention (3) In the manufacturing process, the present invention adopts a general full-color polymer electrical excitation light surface, and an interference layer is formed by a deposition method. The interference layer is used for light mound selection, and is used to enhance light waves. 2. The two media are overlapped alternately on the transparent substrate-side: the lens, which forms a resonance interval between the cathode and the cathode. When the light wave resonates repeatedly within the interval: the light wave with a predetermined wavelength will be strengthened in this resonance cavity. And concentration, can obtain a high-intensity single-wavelength emission panel. The half-lens is made of Li Shao 帛 + material with the same fold rate as the deposition of the compound, so that the light wave can be a resonant cavity between the cathode and the half-lens Different light colors can be obtained by resonance, so full color = each light color can be adjusted and strengthened. [Embodiment] The detailed description and technical contents of the present invention are described below with reference to the drawings: Please refer to "shown in Figure 1", which is a schematic diagram of the device of the present invention. As shown in the figure, a cathode conductive substrate 1 is included. The cathode conductive substrate 10 has a patterned conductive substrate, and a partition wall between the cathodes is provided. A light-emitting layer 20 is located on the cathode conductive substrate 10, and the light-emitting layer 20 is made of polyethylene. A polymer organic light-emitting layer 20 of azole (PVK) -doped organic dye or polyfluorene is provided with a hole-transporting layer 30 on the light-emitting layer 20 and a hole-transporting layer 30. An anode layer 40 is provided on the anode layer 4G. A semi-transparent film interference layer 5 () is disposed on the anode layer. The translucent layer uses two kinds of substances with different refractive indexes, and 6 to 100 layers of the two kinds of substances with different refractive indexes are steamed repeatedly. Finally, a protective layer 60 is provided on the layer 50. I will use the invention to adjust the color of the light emitted by the light source using the soil texture of light interference. Page 7 1222842 _Case No. 92109657_ Year, Month, and Revise The light emission wavelength can be adjusted by adjusting the spacing of the interference layer to obtain the high-saturation specific light color required by the panel, and at the same time, improve the external light emission efficiency of the color light. The following table is for the pixels emitting red (R), green (G), and blue (B) in the present invention, using titanium dioxide (TI 0 2) and silicon dioxide (SI 02) as one of the translucent film interference layers 50 Implementation layers and thickness table: Pixel emission color unit Pixel emission color unit Pixel emission color unit Red Angstrom (A) Green Angstrom (A) Blue Angstrom (Person) TI02 61.33 SI02 86.9 SI02 439.92 SI02 58.98 TI02 87 TI02 79.38 TI02 47.75 SI02 129 SI02 126.39 S102 105.83 TI02 58.3 TI02 77.32 TI02 69.39 SI02 101 SI02 140.43 SI02 82.62 TI02 8S TI02 81.93 TI02 48.11 SI02 104 SI02 131.68 S102 88.31 Ή02 502 TI02 70.31 TI02 63.51 SI02 100 SI02 120 SI02 120 SI02 92.6 SI02 127.83 SI02 84.05 T2 02 53.4 TI02 161.71 TI02 47.61 SI02 69.5 SI02 127.29 SI02 83.26 Ding 102 27.7 TI02 65.43 TI02 42.36 SI02 55.2 SI02 129 SI02 30.58 T102 41.5 TI02 162.19 TI02 44.98 SI02 59.8 SI02 8.0 02 SI02 127 79.8 SI02 468.7 SI02 82.1 Ding 102 44.3 TI02 9.68 TI02 34.6 5 SI02 14.6 SI02 102.92 TI02 51 Total thickness 1372.39 Total thickness 1547 Total thickness 2894.71

第8頁 1222842 案號92109657_也月 日 五、發明說明(5) 呀參閲『第2圖所示』,係本發明之強度-波長曲線8 1 示意圖’如圖所示··習知之高分子有機發光二極體(pLED )元件無本發明之半透明膜干涉層5 〇,所得的習知之強度一 波長曲線8 〇,與經由本發明之裝置,於高分子有機發光二 極體(PLED)元件陽極層40上設置有半透明膜干涉層5〇可 得本發明之強度-波長曲線8 1,兩者相比較之下可發現 士發明之強度-波長曲線81較習知之強度_波長曲線8〇得到 高飽和度之特定光色。 請參閱『第3圖所示』,係本發明之製造方法流程示 意圖,如圖所示··本發明係一種增加高分子有機發光二極 體疋件色飽和度之方法,其主要步驟包括: a) 製作一陰極導電基板1〇,係一基板其上之陰極層已 圖案化’並設置一陰極間之隔離壁7 〇 ; b) α置發各色光(紅光、綠光、藍光)之發光材料層 於陰極導電基板10上; C )製作一電洞傳輸層3 0於上述之發光材料層上,並利 用此電洞傳輸層3 0來控制發光元件之整體厚度; d)設置一陽極層4〇於上述之電洞傳輸層^ ; 主e)設置半透明膜干涉於上述之陽極層4(),其中, 層5°係利用兩種折射率不同之物質,反覆 f )塗佈保護層6 0。 成妓述步驟6之半透明膜干涉層5〇,與陰極之間形 在二:5門Ϊ ί波在此區間内反覆共振干涉,特定光波 ^^振£間被加強集中’而得到超高強度的單一波長射 第9頁 1222842 案號 92109657 年 月 曰 修正 五、發明說明(6) 出面板,且光波能在陰極與半透鏡間做干涉,由於不同厚 度之共振腔可共振得到不同光色,因此可以對全彩面板之 各光色做一調整與補強 惟以上所述者,僅為本發明之較佳實施例而已,當不 能以之限定本發明實施之範圍,即大凡依本發明申請專利 範圍所作之均等變化與修飾,皆應仍屬本發明專利涵蓋之 範圍内。Page 81222842 Case No. 92109657_Yueyue 5th, the description of the invention (5) Please refer to "shown in Figure 2", which is a schematic diagram of the intensity-wavelength curve of the present invention 8 1 'as shown in the figure. The molecular organic light emitting diode (pLED) element does not have the translucent film interference layer 50 of the present invention, and the obtained conventional intensity-wavelength curve of 80 is obtained, and the polymer organic light emitting diode (PLED) is passed through the device of the present invention. ) A semi-transparent film interference layer 50 is provided on the element anode layer 40. The intensity-wavelength curve 81 of the present invention can be obtained. Comparing the two, it can be found that the intensity-wavelength curve 81 of the invention is more than the conventional intensity_wavelength curve. 80 obtains a specific light color with high saturation. Please refer to "shown in Fig. 3", which is a schematic flow chart of the manufacturing method of the present invention, as shown in the figure. The present invention is a method for increasing the color saturation of polymer organic light emitting diodes. The main steps include: a) Fabricate a cathode conductive substrate 10, the cathode layer on which a substrate has been patterned ', and a separation wall 7 between the cathodes is provided; b) α is set to emit light of each color (red, green, blue) The light-emitting material layer is on the cathode conductive substrate 10; C) a hole transmission layer 30 is fabricated on the above-mentioned light-emitting material layer, and the hole transmission layer 30 is used to control the overall thickness of the light-emitting element; d) an anode is provided The layer 40 is provided on the above hole transporting layer ^; the main e) is provided with a translucent film to interfere with the anode layer 4 () described above, wherein the layer 5 ° is coated with two different refractive index materials, and is repeated f) coating protection Layer 6 0. In the step 6 described above, the semi-transparent film interference layer 50 is formed between the cathode and the cathode in two steps: 5 gates. The wave repeatedly resonates and interferes in this interval, and the specific light wave is strengthened and concentrated. Intensity of a single wavelength shot Page 91222842 Case No. 92109657 Rev. V. Description of the invention (6) The panel is exited, and the light waves can interfere between the cathode and the half lens. Due to the resonance cavity of different thickness, different light colors can be obtained by resonance Therefore, it is possible to make adjustments and enhancements to each light color of the full-color panel, but the above are only preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited by this, that is, the general application according to the present invention All equal changes and modifications made within the scope of the patent shall still fall within the scope of the invention patent.

第10頁 1222842 _案號92109657_年月日 修正 圓式簡單說明 第1圖,係本發明之裝置示意圖 第2圖,係本發明之強度-波長曲線示意圖 第3圖,係本發明之製造方法流程示意圖 【圖號說明】 陰極導電基板...... 10 發光層.................20 電洞傳輸層...............30 陽極層...... 40 半透明膜干涉層.............50 保護層...... 60 隔離壁.................70 習知之強度-波長曲線...........80 本發明之強度-波長曲線..........81 陰極導電基板...............a 設置發光材料層··...... b 設置電洞傳輸層並控制厚度.........c 設置陽極層................d 設置半透明膜干涉層............e 塗佈保護層................fPage 10 1222842 _ Case No. 92109657_ Year, month and day correction circle type simple description Figure 1 is a schematic diagram of the device of the present invention Figure 2 is a schematic diagram of the intensity-wavelength curve of the present invention Figure 3 is a manufacturing method of the present invention Flow chart [Illustration of drawing number] Cathode conductive substrate ... 10 Light-emitting layer ... 20 Hole-transport layer ......... ... 30 Anode layer ... 40 Translucent film interference layer ... 50 Protective layer ... 60 Partition wall ... ........ 70 Known intensity-wavelength curve ......... 80 Strength-wavelength curve of the invention ......... 81 Cathode conductive substrate ... a a luminescent material layer ... b a hole transmission layer and thickness control ... c Setting anode layer ... d Setting translucent film interference layer ... e Coating protective layer ... ......... f

Claims (1)

以2842By 2842 I 一種增加高分子有機硌 裝置,包括有·· 有機發先-極體兀件色飽和度之 已圖案化並設置—陰極間隔離壁 一位於該陰極導電基板上之發光層;導電基板, 一位於該發光層上之電洞傳輸層; 一位於電洞傳輸層上之陽極; 一位於陽極上之半透明膜干涉層; 一位於半透明膜干涉層上之保護層。 2 .如申請專利範圍第丨項所述之 二極體元件色飽和度之梦番.. &门刀千有機發先 、沒之裝置,其中,該陰極導電基板係降 極層已圖案化之導電基板。 ” κ 3 ·如申請專利範圍第i項所述之增加高分子有機發光 二極體元件色飽和度之裝置,其巾,該發光層係為聚乙烯 味唾(PVK )摻雜有機染料之高分子有機發光層。 4 ·如申請專利範圍第1項所述之增加高分子有機發光 二極體元件色飽和度之裝置,其中,該發光層係為聚芴高 分子(polyfluorene)之高分子有機發光層。 5 ·如申請專利範圍第1項所述之增加高分子有機發光 二極體元件色飽和度之裝置,其中,該半透明膜干涉層係 利用兩種折射率不同之物質,反覆沉積6至1〇〇層。 6 · —種增加南分子有機發光二極體元件色飽和度之 方法,其製程主要步驟包括: a) 製作陰極導電基板; b) 喷墨印刷全彩像素發光材料於陰極導電基板上並烘 1222842 _案號92109657_年月曰 修正_ 六、申請專利範圍 烤; c) 製作電洞傳輸層並控制整體厚度; d) 設置陽極; e) 設置半透明膜干涉層; f) 塗佈保護層; 其中,上述步驟e之半透明膜干涉層,與陰極之間形 成共振區間,使光波在此區間内反覆共振干涉,特定光波 在此共振區間被加強集中,而得到高強度的單一波長射出 面板。I A device for increasing polymer organic tritium, which includes the patterning and setting of the organic saturation-polar body color saturation—a cathode separation wall a light emitting layer on the cathode conductive substrate; a conductive substrate, a A hole-transporting layer on the light-emitting layer; an anode on the hole-transporting layer; a translucent film interference layer on the anode; a protective layer on the translucent film interference layer. 2. The dream of the color saturation of the diode element described in item 丨 of the scope of application for patents. &Amp; Door Knife Thousands of Organic Devices First, No Device, wherein the cathode conductive substrate is a patterned lowering layer Conductive substrate. "Κ 3 · The device for increasing the color saturation of a polymer organic light emitting diode element as described in item i of the scope of the patent application, the towel, the light emitting layer of which is a high level of polyethylene dye (PVK) doped organic dye Molecular organic light-emitting layer 4. The device for increasing the color saturation of a polymer organic light-emitting diode element as described in item 1 of the scope of the patent application, wherein the light-emitting layer is a polymer organic polymer made of polyfluorene 5) The device for increasing the color saturation of a polymer organic light emitting diode device as described in item 1 of the scope of the patent application, wherein the semi-transparent film interference layer uses two different refractive index materials to deposit repeatedly 6 to 100 layers. 6 · A method for increasing the color saturation of a South Organic Light Emitting Diode element, the main steps of the process include: a) making a cathode conductive substrate; b) ink-jet printing full-color pixel light-emitting materials on Cathode conductive substrate and baking 1222842 _ case number 92109657_ year month amendment _ six patent application baking; c) making hole transmission layer and control the overall thickness; d) setting anode; e) setting A translucent film interference layer; f) coating a protective layer; wherein the translucent film interference layer in step e above forms a resonance interval between the cathode and the cathode, so that the light wave repeatedly interferes with resonance in this interval, and the specific light wave is interfered in this resonance interval; The concentration is enhanced to obtain a high-intensity single-wavelength emission panel. 第13頁Page 13
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