TWI222140B - Thermal processing system and thermal processing method - Google Patents

Abstract

A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object.

Description

1222140 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (1 Technical Field ^ _ This invention is a system and method for using, for example, a heating lamp system to perform heat treatment on an object to be processed, wherein Such as annealing treatment, CVD (chemical vapor deposition) treatment, and the object to be processed is like a semiconductor wafer. The background technology is general, in order to manufacture a semiconductor integrated circuit, it is half of the wafer. The silicon substrate is repeatedly subjected to various heat treatments, such as deposition treatment, annealing treatment, oxidation and diffusion treatment, sputtering treatment, etching treatment, nitridation treatment, etc. In this example, in order to make the electrical characteristics of the integrated circuit and The output of the product is maintained at a high level, and the above-mentioned various heat treatments should be performed more uniformly on the entire wafer surface. A To achieve this purpose, because the heat treatment process is affected by the temperature of the wafer, the entire wafer surface is In order to maintain a uniform temperature across the wafer surface, many methods are known. For example, a square-on-k semiconductor table for a single wafer type heat treatment system is rotated to avoid temperature non-uniformity. In another method, 'the wafers can be heated quickly by these The irradiation lamp generated by the heating lamp is selectively controlled for each wafer area. Figures 1 and 2 show an example of a heat treatment system in related art. The figure shows the general structure of the heat treatment system, and Figure 2 shows _The floor plan is used to describe the arrangement of these heating lamps in the heat treatment system. As shown in Figure 丨, a processing box 2 is provided with a ring-shaped placing table 4. The semiconductor wafer wr & ---- Order h --- ^ ----- line (please read the note on the back? Matters before filling out this page) -4- 1222140 A7 V. Description of the invention (2) 4 The inner side of the upper side is in contact, so The wafer w is supported by a placement table 4. The placement table 4 is fixed to a cylindrical foot post member, from < β 丄 四, 丨 Khan 6 < upper cylindrical foot post The part 6 is supported by the bottom of the processing box 2 via a shaft bearing part 3, so that the table 4 can be placed along a circle. Pregnancy # n ,, r, U fe-shaped foot post Shao 6 in the peripheral direction.

'A rack 10 is a peripheral universal joint of the gang post member 6 and A I 旰 〇 placed on the inner side wall of the leg post member 6. In addition, a driving motor 12 placed on the virtual shovel, the driving mechanism 12 and the driving mechanism 12 has a driving shaft 14 protruding upward in a sealed manner and passing through the bottom of the processing box 2. The drive shaft 14 has a pinion 16 fixed thereto, and the pinion 16 is engaged with the rack 10 described above. Therefore, the foot post member 6 and the setting table 4 are rotated together. Furthermore, the quartz glass is a flat transfer window 18, for example, which is placed in the upper part of the processing box 2 in a sealed manner. In addition, a plurality of heating lamps 2G are placed on the transmission window 18. Then, by the radiant heat sent from the lamps 2 (), the wafer W is heated to a predetermined temperature. Since the setting table 4 is rotated with each heating, the wafer 1 placed on the setting table 4 can be heated at two rotations. Therefore, the temperature on the entire surface of the wafer W is uniformed. In this system, the heating lamps 20 include, as shown in FIG. 2, for example, the approximately spherical lamp bodies 2 2, and these are placed on the back side of the lamp bodies 22 and are flat in shape. Reflective plate 2 4. As a result, light radiation can be used efficiently. Furthermore, in order to be able to supply a large amount of power, the lamp bodies 2 2 include the filaments 26 extending in a spiral shape toward the wafer W. This type of lamp body is called, "Single-ended type lamp body". In this example, the plurality of heating lamps 20 are arranged so as to cover the upper surface of the semiconductor wafer W described above. Power can be supplied to these lamps 20 separately and control the -5 'paper size to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) according to the respective areas divided into the wafer W surface. (Please read the notes on the back before filling this page) Order Mill · ----- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1222140 A7 B7 3 V. Description of the invention (: Wait for the lamp 2 0. Figure 3 and Figure 4 shows another heat treatment system in the related art. In this system, the heating lamps 30 are replaced by the strip-shaped lamp bodies 2 8 and the ball-shaped lamp bodies 22 described above. On the back side of 28, there are reflective plates 3, which are approximately hemisphere-shaped. Each lamp body 28 contains, for example, a filament extending along the longitudinal direction of the lamp body 28 and spirally winding. 34, and electrical terminals 36 placed on both ends of the lamp body 28. This type of lamp body 28 is referred to as a "double-ended type lamp body". The heating lamps 30 are arranged in parallel at a predetermined interval. When using the spherical lamps 20 with the flat reflecting plates 24 as shown in FIG. 1 and FIG. Controllability is satisfactory. However, in each of the lamps 20 having this structure, there is a large amount of radiant heat in the horizontal direction, and the radiant heat can be reflected and guided to the wafer, and energy is lost in each reflection. Compared with the strip lamps, when using the strip lamps 30 shown in FIGS. 3 and 4, a large amount of light radiation is directly irradiated to the wafer. Therefore, the energy loss is relatively small. However, in this example, each Each lamp body 28 should cover a relatively large wafer surface area. In addition, the lamp body 28 reduces its directivity because it crosses the wafer. Therefore, it is difficult to control the temperature of each region on the wafer with high accuracy. In addition, the directionality of radiant heat is improved, and the distance D between the surface of the wafer w and the lamps 20, for example (see the figure υ), should be shortened to make the diffusion of light radiation heat smaller. For example, FIG. 5A and FIG. 5B illustrate the relationship between the directivity of these lamps and the distance D. "Figure 5 A shows the directivity when D is 55 meals, and Figure 5 b represents the direction of W Temple. Each graph in Figure 5 A and Figure 5 B represents crystal 6_ (210x2 ^ 7 mm) (please read first Note on the back, please fill out this page again) -IIIIII y ”— — IK — — — — — Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1222140 A7 --------—— V. Description of the invention (4) Circle Dependence on the temperature of each heating lamp. As shown in the figure, the top of each curve is flat. Therefore, the number of heating lamps heated to a specific wafer area is large and Its directivity is therefore low. Compared with Figure 5a: Example: In the example of Figure ί, because the top of each curve is sharp, the number of these heating lamps heated to a specific wafer area is small and its direction Sex is therefore high. Therefore, in order to improve the directivity of such heating lamps, it is better to shorten the distance D. However, in the case of performing wafer heat treatment in an atmosphere with a reduced pressure, a transmission window made of quartz glass 8 The thickness t of the wafer with a diameter of 400 cm should fall between 30 and 40 cm, for example, in order to ensure the high-voltage resistivity of the transfer window 18. As a result, the directivity of these heating lamps is reduced, and the increase in the heat transfer capacity of the transfer window 18 due to the increase in the thickness t of the transfer window 18 also reduces the controllability of the temperature. To solve this problem, the transmission window 8 was formed into a dome shape with an approximately hemispherical shape to increase its piezoresistivity, as shown in FIG. 6. However, in this example, although it is possible to reduce the thickness of the transmission window 18 to 10 to 20 cm, the overall height H of the dome-shaped transmission window 18 still falls on the order of 60 to 70 cm. Therefore, this method broadcast method solves this problem, because the distance β shown in Figure 丨 should be shortened. In order to uniformly heat the wafer W, the heating lamps 22 a may be arranged as shown in FIGS. 7A and 7B instead of being arranged as the heating lamps 20 as shown in FIG. 1. This example also uses the single-ended type lamp 2 2 a such as S to project onto the wafer w approximately vertically. In this arrangement, the heating lamps 22a are arranged along three concentric circles having different radii in a plane facing the wafer w, as shown in Fig. 7A. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ill · -------- # Packing (please read the precautions on the back before filling this page) Order · -----. ----- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Development 1222140

V. Description of the invention (5) The children's lamp 2 2 a printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is formed in a reflecting plate 25 and placed in each of these depressions with a pre-shaped shape 2 7 a As shown in FIG. 7B, the light emitted from the lamps 2 2 a can be reflected by the reflection plate 25. Instead of Figs. 7A and 7B, the examples shown in Figs. 8A and 8B use the above-mentioned double-ended strip lights 2 2b. In this example, as shown in FIG. 8A, the heating lamps 2 2 b are arranged parallel to each other at a predetermined interval in a plane facing the wafer w. In this example, the lamps are also formed in a reflecting plate 25 and placed in recessed parts 2 7 b each having a predetermined shape, as shown in FIG. 8B, so the light emitted by the lamps 2 2 b It can be reflected by the reflection plate 25. In the example of using these single-ended lamps 2 2 a shown in FIGS. 7 A and 7 B, if each lamp 2 a is elongated and extends perpendicular to the wafer w, the area illuminated by the lamp is narrow. . That is, although light is emitted laterally and longitudinally from the lamp 22a, light directly applied to the wafer W is emitted longitudinally from the extended end of the lamp 22a, and light emitted laterally from the lamp 22a is recessed in the reflection plate 25 The component 27a reaches the wafer W after internal reflection, as shown in FIG. 9A. The shape of the recessed part 27 a is determined so that the light reflected in the recessed part 27 a uniformly irradiates the wafer w. However, if the lamp 2 2 a focuses the illumination of the wafer w, the area to be illuminated is narrow as shown in FIG. 9B. When a large amount of heat is emitted around the wafer W, its temperature decreases. Therefore, the temperature distribution in the wafer W is radial and should be corrected by these heating lamps. In addition, the temperature distribution of the wafer W is controlled by the light intensity distribution of these heating lamps. In the case of using the above-mentioned single-ended lamps 22a, if the illuminated area is narrow as described above, it is possible to supply the reflections by appropriate control. -8-This paper standard applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- ▼ Packing "------ (Please read the precautions on the back before filling this page) Order ---- ^ ----- line 1222140 Economy Ministry of Intellectual Property Bureau Employees' Cooperative Printed Clothes A7 B7 V. Description of the Invention (6) Shape of recessed part 2 7 a in plate 2 5 and / or power source of lamp 2 2 a to freely control these heating lamps to the crystal Luminous intensity distribution on the surface of circle W. Therefore, a high degree of controllability of the luminous intensity distribution can be obtained. Therefore, it is easy to control the temperature distribution of the wafer w. However, in the case of using these single-ended lamps 22a, if the shaw of the lamp 22a facing the wafer w is narrow, as described above, and a small amount of light is directly applied to the wafer w and the reflection plate 25 If there is a large amount of reflected light, the leakage is large and the efficiency is low. In the case of using the double-ended lamps 2 2 b, if the strip lamps 2 2 b each having a circular cross-section are arranged in parallel with each other so that the parts along the longitudinal direction of the lamps 22 b face the wafer W. The area irradiated by the lamps 22b on the wafer W is therefore wide. That is, the light is emitted from the lamp 22b in a radial shape, and the portion of the light 22b facing the wafer W is directly applied to the wafer w, and the light reaches the wafer W in an expanded manner. Therefore, when using these lamps 22! 3 as described above, the 4 blade of the lamp 22b facing the wafer w is broad, and a large amount of light is directly applied to the wafer w. As a result, the energy loss due to reflection is small and the efficiency is high. However, since the area where the light emitted by the lamp 22a / kg is directly applied to the wafer w is wide, it is difficult to control the illumination range even by controlling the shape of the recessed member 27b in the reflecting plate 25. Therefore, the controllability of the luminous intensity distribution is low. By controlling the power supplied to the respective lamps 22b individually, it is possible to control the light emission intensity distribution along the γ direction as shown in Fig. 10. However, it is impossible to control the luminous intensity distribution along the X direction. Therefore, it is difficult to achieve a suitable luminous intensity distribution. In addition, the lamp 22b faces the other parts of the wafer w. 9-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page). Order »---- ^ ----- line« 1222140 A7

1222140 A7 B7 V. Description of the invention (8 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs may also effectively reduce the thickness of the transfer window. Therefore, it is possible to reduce the distance between the heating lamp system and the wafer w. Therefore, there are It is possible to further improve the directivity of light emission heat. In addition, because it is possible to reduce the heat capacity of the transfer window due to the reduction in the thickness of the transfer window, it is possible to improve the temperature controllability of individual regions on the wafer W. In addition, 'by using It is possible for the double-ended tubular lamps placed in a concentric circle in the heating lamp system to efficiently use the radiant heat of the lamps to heat the wafer W. 'Furthermore, by forming these corresponding to the It is possible to effectively use the radiant heat of these lamps to heat the wafer w, such as the concentric gaps of many lamps arranged concentrically. With the accompanying drawings, the other objects and further features of the present invention will be more apparent from the detailed description below. 8 shows a brief description FIG. 1 shows an embodiment of a heat treatment system in a related art; FIG. 2 Table 7 JT The arrangement of these heating lamps in the system shown in FIG. 1; FIG. 3 shows a related technology Another embodiment of the heat treatment system; Figure 4 shows the arrangement of one of these heating lamps in the system shown in Figure 3; Figures 5 A and 5 B show the heat dissipation of the a / f knife edge hot air Diagram of the relationship between universality and the lights; Figure 6 shows—in the embodiment—a cross-sectional view of a dome-shaped transmission window; FIGS. 7A and 7B show the secret end lamps in the related art; Fig. 8B shows the related technology of Zhong Xi 筌 Raft々 3 Temples used for a heat treatment system. (Please read the notes on the back before filling this page) -11-Thai paper size applies Chinese National Standard (CNS) A4 ^^ 〇x 297 mm 1222140

V. Description of the invention (9) The end consumer lamp of the Intellectual Property Bureau of the Ministry of Economic Affairs's consumer cooperative prints end lamps; Figures 9A and 9B show the special delights of single-ended lamps shown in Figure 7A and Figure 7; Figure 10 depicts Figure 8A and Figure Features of the double-ended lamp shown in FIG. 8B; FIG. 11 shows a side elevation sectional view of a heat treatment system in the first embodiment of the present invention; FIG. 12 shows a section of the heat treatment system along the section line AA of FIG. Figure 13 shows a plan view of a support base in the heat treatment system shown in FIG. 11; FIG. 14 shows a plan view of one of the lamps of the heating lamp system in the heat treatment system shown in FIG. The plan view of another row of the heating lamps in the lamp system can also be used in the heat treatment system shown in FIG. 11; FIG. 16 shows the plan view of the other row of heating lamps in a heating lamp system, which can also be used in In the heat treatment system shown in FIG. 11; FIG. 17 shows a plan view of another support base member, which can also be used in the heat treatment system shown in FIG. 丨 with the heating lamp system shown in FIG. 16; FIG. 18 shows Another row of heating lamps in a heating lamp system A plan view, which can also be used in the heat treatment system shown in FIG. 11; FIG. 19 shows a side elevation sectional view of a heat treatment system in a modified embodiment of the first embodiment of the present invention shown in FIG. The heat treatment is performed under the condition of atmospheric pressure; FIG. 20 shows a side elevation sectional view of a heat treatment system in the second embodiment of the present invention; FIG. 21 shows a heating lamp system in the heat treatment system shown in FIG. 20 _____- 12- This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 丨 丨 l --------- install ------ (please first Read the notes on the back and fill in this page) Order ---.----- line «1222140 A7 V. Description of the invention (10) A plan view of one of the heating lamps printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs; Figure 22 FIG. 23 is a perspective view of an arc-shaped lamp used in the heating lamp system shown in FIG. 21; FIG. 23 is a plan view of one row of the heating lamps in a heating lamp system, which can also be used in the heat treatment system shown in FIG. 20; Figures 24A and 24B show that the wafers are The heating lamp system of the present invention changes characteristics of the surface of the wafer due to the passage of time as it is heated; and FIG. 25 shows a plan view of one of the heating lamps in a heating lamp system, which can also be used in FIG. 20 Heat treatment system. Detailed description of the invention The heat treatment system in the first embodiment of the present invention will now be described. FIG. 11 shows the structure of a heat treatment system in the first embodiment, and FIG. 12 shows the same structure along FIG. A cross-sectional view of the heat treatment system's section line a_a. Fig. 13 shows a plan view of a support base member, and the figure " shows a plan view representing the arrangement of the tubular heating lamps. As shown in these figures, the heat treatment system includes a cylindrical processing box 42 made of a material such as stainless steel and a metal. A processing gas nozzle pipe for supplying necessary processing gas into the processing box 42 is placed in one of the side walls near the upper part of the processing box 42, and the discharge port pipe 46 is the other side wall of the processing box 42 and the Mouth tube ο Opposite. A genus of empty hollow tube (not shown in the figure) is connected to the mouth tube 46, and the box 42 can be empty. In the processing box 42, the support ring 48 is for forming a ring shape. Set the table 'for example' to support-the semiconductor wafer w belonging to the object to be processed. Management release support-13 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 Intellectual Property Bureau of the Ministry of Public Economic Affairs, Employee Consumption Cooperative) Printed Ϊ 222140 V. Description of the invention (11 The bearing ring 4 8 is connected to the upper end of a columnar foot post member 50. Then, the above-mentioned support ring 4 8 has a wafer holding member 51, and the holding member 5 1 is the inner part of the upper end of the support ring 48, and the periphery of the support ring 48 is shaped like a [. The semiconductor wafer W, which is regarded as an object to be processed, is in contact with the wafer holding member 51 at the back side. The wafer w is supported / maintained by the support ring 48. When the wafer W When the temperature becomes as high as 1000 π at the highest temperature, for example, 'support ring 4 8 is made of carbonized ceramic with thermal resistance. In addition, a thermal insulation material of quartz glass is used. As a connecting member 53 between the support ring 48 and the foot post member 50, the purpose is to thermally protect the magnet placed above the foot post member 50, which will be described below. 5 2 and the coil part 5 4 are placed on the side wall of the foot post part 50 and near the bottom of the processing box 4 2. In particular, as shown in FIG. 12, the magnets 4 5 2 include a pair of permanent Magnets, for example, the pair of permanent magnets are placed on the outer surface of the foot post member 50 separately from each other according to the diameter direction of the foot post member 50. The coil members 54 include a plurality of disposed at predetermined intervals (electrical angles) in the processing box. 42 Coil unit 56 on the inner side wall of the coil. This coil unit is located, for example, at a position facing the aforementioned magnet component 5 2 with a fine gap at a horizontal level. A parent (electrical) current flows through each coil unit 5 6 , For example, surrounded by a predetermined Phase difference. Therefore, a rotating magnetic field capable of controlling the rotation rate is formed near the bottom of the processing box 42. Then, the magnet member 52 magnetically attracted by the rotating magnetic field can rotate along the rotating magnetic field. Therefore, it is rotated. In this example, the bottom end of the leg post 5 0 is not connected to the bottom of the processing box 4 2 (Please read the precautions on the back before filling in this page}

Order · .---- I ---- line L -14 Α7 Β7 V. Description of the invention (12 Shao is floating with the processing box 42. The middle level of the special feature 50 is shown in Figure 11 The mmikm-cloth-like stained magnet part 58 is inlaid and fixed around the foot post part ^.. J by the side soil and resembles a flange. The floating magnet shao part 58 is provided by The thin plate is made as follows and extends horizontally. 纟 Solid / cloth-like water-permanent magnets, Example 1 = The upper side of the floating magnet member 58 is -N pole and the bottom side is an S pole, holding the recessed member 6G It is formed horizontally and extending around the processing :: inner side wall, so that the above-mentioned floating magnets 58 in the processing box 42 can maintain a freely movable state. The magnet maintaining recessed member 6G is along the processing box. 42 The inner side wall is formed into a similar circle. In addition, many magnet units 62 are placed in the magnet maintaining recessed part 6 0 <pre-position position to magnetically apply buoyancy to the floating magnet part ^. Especially: as shown in Fig. 12, The child magnet unit 62 includes three units 62 arranged at equal intervals along the inner side wall of the processing box 42. The respective magnet units 62 Contains the upper coil units 62, 62B, and 62c and the lower coil units 7L62a, 62b, and 62c to vertically clamp the floating magnet components 58 〇 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy The electromagnetic force of the repulsive force generated by the coil unit 6> A, 62B, 62c, 62a, 62b, and 62c can be controlled by the currents flowing through the coils respectively. In this example, these currents flow through For the respective coil units, the directions thereof cause the electromagnetic repulsive force to be generated, so that the coil units repel the floating magnet member 58 described above. Therefore, the foot post member 50, that is, the floating magnet member 58, is It is floating. Although not shown in the figures, these sensors are placed on the foot post part 5 〇 to detect the water of the foot post part 5 0-This paper standard applies to China National Standard (CNS) A4 Specifications (210 X 297 mm) 1222140 V. Description of the invention (13 Flat and vertical points printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, it is necessary to control the current flowing through these coil units.里 ί 目 = h 卩 is open 'and in this position, the above-mentioned support seat member 66 is passed through a sealing member belonging to the O-ring, "the member 66 passes through a sealing ring,-Wen Cheng Yacha ,,, #: 牛 〇 Inlaid with a quartz made of transparent: made of: 'Like a seal around the periphery. Ring. In particular, the upper surface of the support member 66 is in contact with the surface of the transmission window 68 "under The piezoresistance of the transmission window can be improved. For example, the entire support material does not produce any all-genus, "genus" materials, which is a technical problem. The support base member 66 and: a ring-shaped material 'and its interior has a plurality of approximately equal intervals and each other: the row \ support base 72' as shown in FIG. In the figure, the support seat: is 5. However, in reality, the number corresponding to the diameter of the wafer W on the material source and the person Ik is, for example, more than 10. In addition, although in this embodiment, the plurality of reeds 72 are arranged in parallel with each other: the structure of the child support base is not limited to this. For example, these many supports may be positioned perpendicular to each other like a lattice. By providing the support base member 66 which supports the transfer window '68 in a -plane, the high-voltage resistivity of the transfer window 68 can be maintained even if the thickness t of the openings 68 becomes smaller. As the number of these support bases 72 increases, the piezoresistance is improved. However, it is considered that the amount of radiation generated by the heating lamp is transmitted through the transmission window M; for transmission, it is preferable to set the aperture ratio (the ratio of the area where radiant heat can pass) equal to or greater than 60%. Moreover, as shown in Figure 3, these temperature-controlling media paths are obtained by reading the notes on the back side and writing this page.

1222140 A7

A head is drilled to form the support seats 72 and the periphery of the support seat member 66. One end of each path 74 is in common communication with an inlet head 78 having a media inlet%. In addition, the other end of each path 74 communicates with an exit head 82 having an exit 80 in common. Therefore, a hot water can be used to heat the path 7 4 such as the temple stream and the iL 4. A cold water is allowed to flow through these paths 7 4 when cooling is performed. Therefore, the support base member 6 6 and the transfer window 6 8 can be heated or cooled to perform temperature control. A light box 8 4 is placed above the transmission window 6 8. The above-mentioned heating lamp system 86 is a semiconductor wafer W inside the processing box 42, which is placed in the ki 84 and heats it out by the light emitting heat. In particular, as shown in FIG. 4, the heating lamp system 86 includes a plurality of tubular heating lamps 90, each of which has a rolled end 9 2 at both ends, and the tubular heating lamps 90 are The concentric circles are arranged so as to correspond to a semiconductor wafer W having an approximately circular shape. In the embodiment shown in Fig. 14, a plurality of approximately semicircular tubular heating lamps 90 having different bending radii are arranged concentrically. The electrical terminals 92 of the respective heating lamps 90 are connected to a power supply line (not shown). A filament 94 (see Fig. 11) is provided inside each tubular heating lamp 90 to connect between the two terminals 92. Therefore, for example, each heating lamp 90 is a 'one_lamp'. The above-mentioned tubular heating lamps 90 arranged in concentric circles are used to heat many concentric circles, that is, an inner region 96a, a middle region 96B, and an outer region 96C on the surface of the wafer W, as shown in FIG. 14 As shown. In FIG. 14, the heating lamps 90 are placed such that one single circle of the lamps 90 is placed in the inner area 9 6 A, the double circles of the lamps 90 are placed in the middle area 9 6 b and the Wait for the double circle of lamp 90 to be placed in the outer area 96C. However, in fact, more of these lamps -17- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 g t) • | 丨 Γ -------- (Please read the back first (Notes to fill out this page)

Order ·· ^ ----- Line L Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy

A circle with a diameter of + 冋 iSL is set,-, ... Then, on each of the respective tubular heating lamps 90, a reflecting plate 98 having a semicircular portion or a trapezoidal portion is inlaid. Therefore, the reflected light is applied to the wafer W. FIG. 14 omits the marking of the reflecting plates 98. The above-mentioned tubular heating lamps 9, 0 are connected to a lamp control sound 100 in each area. In addition, the bottom of the processing box 42 is provided with a number of radiation thermometers 102 corresponding to the respective regions, as shown in FIG. 丨, and the temperature of the hot lamps 90 is based on a wafer-based The temperature feedback method is controlled for the respective areas such as driving, and the wafer temperatures are obtained through the respective radiometers 102. Therefore, the temperature of the wafer boundary can be maintained at a predetermined white temperature. '' In FIG. 11, a gate valve 104 is opened / closed when the semiconductor wafer is fed into and out of the processing box 42. In addition, although not shown in the figure, a lifting bolt for lifting / lowering the wafer w is also placed at the bottom of the processing box 42. The lifting = is performed during the transfer of the wafer W. The operation of the heat treatment system in the above-mentioned first embodiment of the present invention will now be explained. First, the '+ conductor wafer W' is from a load lock not shown in these figures. It is maintained by the gate valve i when it is opened. The two lifting circles are placed on the support. The wafer dimension of the ring 48 is on the piece 51 and is thus maintained. Then, after the above-mentioned action of inducing the wafer w is completed, the gate valve closes the processing box 42 and is applied to the pre-treatment corresponding to the processing added to the crystal solid W by the nu, &amp; The gas is reduced through the processing gas nozzle tube 44 in the processing box 42 irm ----- • installation {Please read the note on the back? Please fill in this page for more details.) Order ........---- Line Printing of clothing by employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

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It is supplied into the processing box 42 when the force is applied. Further, the predetermined processing pressure is maintained in the processing box 42. For example, in a case where the deposition process is performed on the wafer W as a heat treatment, a deposition gas is supplied into a processing space s in the processing tank 42 together with a carrier gas of nitrogen. The heating lamp system 86 placed on the upper part of the processing box 42 is then driven to start the heating lamps 90. Secondly, the plutonium emitted by the heating lamp systems 86 is projected into the processing space S through a transparent transmission window 68. It is then known that the radiation is applied to the upper surface of the semiconductor wafer W, and the surface of the wafer ... is heated to a predetermined temperature. Furthermore, the surface of the wafer w is maintained at this temperature. ^ At the same time, the respective coil units 56 of the above-mentioned coil components 54 placed in the lower part of the processing box 42 have the alternating current (electrical) flowing through the coil units 54 in the predetermined phase in sequence. Current. Therefore, a rotating magnetic field having a predetermined 2 rotation rate is formed inside the processing box 42 (see FIG. 12). Then, the magnet members 52 of the leg member 50 are moved in accordance with the rotating magnetic field. Therefore, the leg post member 50 and the support ring 48 are rotated. Therefore, the semiconductor wafer W held by the support ring 48 is rotated during the heat treatment. Therefore, the wafer temperature can be maintained uniform over the entire surface of the wafer w. In addition, at this time, the three upper and lower coil units 62 A, 62B, 62 C, 62 a, 62 b and the respective floating magnet parts 62 of the three magnets maintained in the four recessed parts 60 located in the processing box 42 and In 62c, a current flows to cause a repulsive force between the flange-shaped floating magnet member 58 placed between the coil units and the coil units. Due to these repulsive forces, the flange-like floating magnet member 58 and the leg member 50 will float together. Therefore, the post component 5 〇 is magnetic (please read the precautions on the back before filling this page) -------- Order ----- I ---- Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Printed 19- Α7 ------------ B7 V. Description of the invention (17): Rotation under dynamic conditions. Therefore, the foot post member 5 () is magnetically floating, and stably rotates. In this way, the toe post member 5Q can be accepted under non-contact conditions from η to any bearing axis. Therefore, it is possible to avoid the problem of particle generation due to grinding, metal contamination, and the like. Furthermore, since the support base member 66 having a plurality of support bases 72 firmly supports the bottom surface of the window 68, the transmission window 68 can be improved on the surface contact bar. The piezoresistance of the transmission window 68 is considerably improved. Therefore, it is possible to reduce the thickness of the transmission window 68. For example, in the related art K system shown in Figure ι, the thickness of the 'transmission window' should be between 40 and 40 m when the diameter is 400 cm. However, in the above-mentioned embodiment of the present invention, the thickness of the transmission window π may be smaller than 2 to 4 meters. Therefore, it is possible to significantly reduce the thickness t of the transmission window 68. By reducing the thickness t of the transfer window 68, it is possible to reduce the distance between the surface of the wafer W and the heating lamp system 86. Therefore, it is possible to improve the directivity of the radiant heat from the heating lamp system 86. j 外 'These media paths 74 are placed in the child temple support seat 72 of the support seat member 66 shown in FIG. When cooling is performed, the temperature-controlling medium of the coolant, i.e., cooling water, flows through these medium paths 74. Therefore, it is possible to cool the support base member 66 and the transmission window thereon to a temperature falling to the room temperature class of the processing box 42. As a result, the metal material generated by the support base member 66, the reaction by-products, and the like adhered to the bottom surface of the transfer window 68 or the surface of the support base member 66, etc., especially in the case of a false lambda product. In addition, by controlling the temperature and / or flow rate of the coolant to control the cooling temperature to a fixed temperature, the thermal effect imparted to the wafer by the support member member and the transfer window 68 can never change. Therefore, it is possible to— ---This paper scale drama + Guan Jia Standard (CNS) A4 specification (^ 297 public director) (Please read the precautions on the back before filling this page) ------- Order ----_-- -Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1222140 A7 18 V. Description of the invention The ground is affected by temperature. Therefore, it is possible to significantly improve the repetition rate. In the case where the transfer window 68 should be heated due to a processing requirement, a heat medium can flow through these paths 74. ^ In the specific implementation described above In the example, the heating lamp system 86 includes the tubular heating lamps 90 which are approximately semicircular and arranged in a concentric circle, and the power applied to the lamps 90 is also controlled by the control unit 〇〇 Charged separately for these separate areas Therefore, first, compared with the examples using the single-ended lamps shown in Figs. 1, 2, 7A, and 7B, a large amount of radiant heat emitted from the lamps 90 is not reflected but directly applied. To wafer w. Therefore, it is possible to heat wafer w efficiently. In addition, as described above, the heat radiation around wafer w is greater than its center. In order to deal with this situation, In the example, because the lamps 9G are placed in a concentric circle as described above, and the supply and rejection sources are controlled separately in each area, it is possible to improve the directionality of the lamps 90 and implement precise temperature control. Therefore, it is possible to control the surface temperature of the wafer W so that the entire surface is effectively uniform. The above-mentioned direction ϋ can also be improved by reducing the thickness of the transfer window 68 as described above. Therefore, the directivity can be further improved. In the fourteen embodiments, each heating lamp 90 has a semi-circular shape. However, the opening angle of the heating lamp 90 is not limited to this, and each heating lamp 90 The arc opening angle is 9 0. (1/4 arc), 6 0 (1 / _6 arc) or similar angles. Furthermore, it is also possible to combine these tubular heating lamps corresponding to different areas such as salt, etc. These tubular heating lamps have the μ-sheet scale timely grid ⑽ 297 Binding- -------- Line {Please read the notes on the back before filling out this page) ί Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-21

1ZZ214U A7 B7 V. Description of the invention (19 solitary shapes with different opening angles. In addition, as shown in Figure 15, Yigu π M ... JL It is possible to use these approximately circular tube-shaped heating lamps 9 0 A , Douzhong rolls-plus 1. Divide, only one part of a circle in a heating lamp is cut, and as shown in Figure 16 and Figure 17, in the support seat member 66, these support seats 72A contain The temperature control medium path 74a can be shaped to such temperature control = path 74A so that the u blocks do not block the radiant heat emitted by the round, arc-shaped tubular heating lamps 90c in FIG. 16. In this actual offense, as shown in Fig. I7, the positions of the slits 7 2 B correspond to the related arc-shaped tubular heating lamps 90c shown in Fig. 16. Therefore, these heating lamps 9GC The emitted light radiation can efficiently reach the wafer W via the transfer window 68 and can therefore be used efficiently to heat the wafer w. In addition, as shown in FIG. 18, it is also possible to use many straight tubular heating lamps 90B ' These heating lamps 90B are general-purpose heating lamps and are not expensive, and correspond to concentric circles corresponding to children and other related areas. In this example, the length of each straight bar-shaped heating lamp 90B is different so as to correspond to the curvature of the respective area. Furthermore, it is also possible to properly combine these straight bar-shaped heating lamps 90B with these The above arc-shaped tubular heating lamps 90 and 90A are combined. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, in the above specific embodiment, the treatment is performed in a reduced-pressure atmosphere or under atmospheric conditions. Such as chemical vapor deposition treatment. However, when heat treatment such as annealing treatment, diffusion treatment and the like is performed at or near atmospheric pressure, it is not necessary to provide a support base member 66 to increase the piezoresistance of the port. As shown in Fig. 11. In this example, as shown in Fig. 19, the conveying window 68 is directly provided on the upper part of the processing box 42 only by the O-ring 64. Because -22- This paper size applies the Chinese National Standard (CNS ) A4 specification (210 X 297 mm) 1222140 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (2C)) This' may further shorten the distance between the surface of the wafer w and the heating lamp system 8 6 distance. Therefore, the directivity of the heating lamp system 86 is improved, and thus it is possible to further improve the accuracy of temperature control in these respective regions. Furthermore, in the above specific embodiment, the support base member 66, the transfer window 68, and the heating lamp system 86 are provided on the upper portion of the processing box 42. However, it is also possible to arrange these components at the bottom of the processing tank 42 or at the upper and lower portions, respectively. In addition, although the object to be processed in this embodiment is a semiconductor wafer w, the present invention may also be applied to glass substrates and LCD substrates. Fig. 20 shows a cross-sectional side view of a heat treatment system in a second embodiment of the present invention. This system includes a flat processing box 102 made of aluminum (A5052), for example, and its inner side wall has a circular cross section. There is an annular groove member 121 around the bottom of the processing box. An inner ring member 131 is placed in the groove member 121. The inner ring member 131 is placed on the inner wall of the groove member 121 via a shaft bearing member 14i and is supported to be rotatable about a vertical axis. A ring-shaped placing member 122 made of silicon carbide (Sic) is placed on the upper end of the inner component 1 31, for example, to maintain the periphery of a wafer * as an object to be processed, and the ring-shaped placing member 122 It rotates with the inner ring member 131. An outer cover forming a groove 121 is extended downward to become a part of the processing box 102, and an outer ring member 132 is maintained by the outer cover 123 and can be rotated about a longitudinal axis through the shaft bearing members 142 and 143. These bearing components ^ and 143 are two vertical stages placed on the outer wall of the outer cover 123. The above-mentioned bearing members 141, 142, and 143 have the same structure and s is a ceramic bearing for Shaozhi. Take the bearing part 143 as an example, it is a stem-23- (Please read the precautions on the back before filling this page) ------- Order ----_----- Line. 1222140 A7 V. Description of the Invention (21) Consumers' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs print quasi-components. These spheres are made of silicon nitride and have the advantages of wear resistance, thermal resistance and corrosion resistance. The retainer 143b made of the main body lubricating material is maintained. The magnetic poles 133 and 134 are placed on the inner ring member 13 and the outer ring member 132, respectively, and are formed on the inside and outside of the separator 124, respectively. Magnetic coupling. The separator 124 is made of non-magnetic material of aluminum or non-magnetic stainless steel (such as SUS304). The inner ring member 131 is made of Maddens steel (SUS440C), And there are many along its periphery, such as 60 'rectangular protrusions (not shown in the figure). These protrusions correspond to the above-mentioned magnetic poles 13 3. The outer member 132 has, for example, 60, Permanent magnets (not shown) made of neodymium magnets, these permanent magnets are associated with these poles 13 4 corresponds to the magnetic poles 133 of the above-mentioned inner ring members 131. A gear member 135 is placed on the outer surface of the outer gear member 132. The gear member 35 engages with the gear member 137 of a stepping motor 136, and the stepping motor is A driving member. Therefore, the stepping motor 136 is driven to rotate the outer ring member 132. A supply path 144 for a purifying gas of nitrogen is formed near a portion outside the upper cover 123. The inner end of the supply path 144 is immediately set The groove member 121 is above the bearing member 14 丨. In addition, many discharge paths 145 for purifying gas are formed, for example, as part of the outer cover 123 which is arranged near the inner side. Purifying gas is from the gas supply line. (Not shown in the figure) enters the groove member 121 via the supply path 144, and then discharges outward through these discharge paths 145 after passing through the bearing shaft 4 piece 141 to a discharge official line (not shown in the figure). Attached -------- Order -_----- Line '(Please read the notes on the back before filling this page) ΑΓ 24- 1222140 A7 ----------- Β7 _____ V. Description of the invention (22) A lifting bolt (not shown) It is placed on the bottom of the wafer ... the lower processing box 102 and is used to lift the wafer W to transfer the wafer to the outside of the processing box. The carrying arm outside the 02. A gas supply in the shape of a horizontal slit for supplying processing gas The path 127 and a discharge path 24 for discharging the processing gas are formed opposite to each other in the side wall slightly higher than the wafer w in the processing box 102. The discharge path 124 is connected to a discharge line 126 through a discharge box 125, which The discharge tank 125 projects outward from the side wall of the processing tank 102. A transmission window 150 (transparent or translucent) made of a quartz material is placed on the upper part of the processing box 102, and a heating unit 105 is placed above the transmission window 150. The structure of the plus 4 unit 105 is larger than the wafer w, for example, and includes the double ring lamps 106, and the female double-ended lamps 106 have the end portions 161 at both ends and a reflecting plate. 151 of the genus. In FIG. 20, a housing 152 maintains a power supply system for the lamps 106. The above-mentioned lamps 106 belong to the group using the lamps. The shape and placement of these lamps 106 are such that many light-emitting portions that are approximately concentric circles surround the center of a wafer W having a different radius. In particular, as shown in FIG. 21 and FIG. 22, in the arrangement of the lamps 106, many circles with different radii are formed by the arc-shaped lamps. Each circle of the lamps 106 forms a separate annular light emitting portion. The circles of the plurality of lamps 106 are arranged concentrically at predetermined intervals. The circle of 106 for each lamp forms a ring-shaped light emission point. Strictly speaking, there is a slight crack between the adjacent lamps of each of the above-mentioned light-emitting parts. Each of the above-mentioned lamps 106 extends vertically upward at its two end portions 161, and the extended ends of these end portions 16m are connected to the power supply system inside the housing 152. For example, each -25- this paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------- installation— (Please read the precautions on the back before (Fill in this page)

Order U --- ^ ----- line I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1222140 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (: The structure of the arc lamp 106 makes this The arc-shaped lamps 106 which are adjacent to each other along the radiation direction have end portions 161, and the end portions 161 do not overlook each other along the radiation direction. These lamps 106 are recesses respectively placed in the reflection plate 151. Part 153. That is, the recessed parts 53 each having an approximately semi-circular cross section are formed on the surface of the reflection plate 151 so as to extend along a plurality of concentric circles at positions corresponding to the lamps. Therefore, The heating unit 105 is constructed. The reflecting plate i5i is made of a material that reflects the light emitted by the lamps 106, such as an aluminum deposited film. The shape of each recessed member 153 That is, the light emitted from the lamp 106 is reflected by the inner wall of the recessed member 53 and then reaches the wafer W on the placement table 122. Then, the light directly from the lamps 106 and the inner wall of the recessed member 153 The reflected light is supplied to the device The wafer w on the table 122. In the embodiment shown in FIG. 21, in the case where an 8-inch wafer is heat-treated, the outer diameter of the lamps 106 is 10 cm and thus a total of 10 rings are formed. Light-emitting part. In particular, the radius of the smallest (innermost) circle is 2.5 cm, for example, the radius of the largest (outermost) circle is 187 cm from the center 0 of the reflection plate 151. The intervals between the circles are 18 cm. For example, the innermost circle 170 contains a single arc-shaped lamp 106, the second circle 171 contains two arc-shaped lamps 106, and the third circle 172 contains two arcs The shape circle 106, the fourth circle 173 contains four arc-shaped lights 106, the fifth circle contains four arc-shaped lights 106, the sixth circle 175 contains four arc-shaped lights 106, the second Each circle 176 contains four arc-shaped lights 106, the eighth circle 177 contains six arc-shaped lights 106, the ninth circle 178 contains six arc-shaped lights 106, and the tenth circle 179 packs 26- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Order U ---------- line i, hair Explanation (24) contains six arc-shaped lamps 106, as shown in Fig. 21. Now, the specific embodiments of the above-mentioned embodiment shown in Fig. 20, Fig. 21, and Fig. 22 will be described. First, the wafer W is based on the above-mentioned transfer arm. (Not shown) is conveyed to the placing member 122 through the carrying hole (not shown) of the processing box 102. Then, the stepping motor 136 starts to rotate, and thus the outer ring member 132 is rotated. At this time, the outer ring member A magnetic force is generated between the magnetic pole 134 of 132 and the magnetic pole 133 of the inner ring member 13m. Therefore, these magnetic poles 13 3 are attracted by the magnetic pole 13 4. Therefore, the inner ring member 131 is also rotated by the magnetic pole 133 attracted by the magnetic poles 134. Therefore, the wafer w is rotated. Then, when the wafer W is rotated at a speed of 90 rpm (90 revolutions per minute), for example, the predetermined heat treatment is due to the wafer heated by the radiant heat of the lamps 106 and the processing gas supplied through the supply path 127 ( That is, the relationship between nitrogen gas) is performed on the wafer W. This heat treatment may be an annealing treatment, in which the wafer W is heated to 1000 ×: and an inert gas is supplied. Then, after the heat treatment is completed at a pre-scheduled time, the lamps 106 are turned off due to the stop of the power supply, and the temperature of the wafer W is thereby decreased, and the stepping motor 13 6 reaches a predetermined temperature at the temperature of the wafer w. Stop after that. The processed wafer w is thus transferred outward from the processing box 10'2 by a transfer arm. As described above, in the second specific embodiment of the present invention, the ring-shaped lamps are formed by removing the arc-shaped lamps along the periphery of multiple concentric circles. Therefore, when high luminous intensity efficiency is maintained, temperature control can be performed along the radiation direction of the wafer w. In other words, because the double-ended arcuate tube 106 is used, the portions of the lamps facing the wafer w are wide, and a large amount of light emitted from these portions is directly applied to the wafer w. Therefore, it is caused by reflection 1222140 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. The energy loss of the invention is small, and the luminous intensity efficiency is high. In addition, 'because many concentric ring lamps are formed by many arc-shaped lamps 106, it is possible to control the luminous intensity (heating temperature) of the individual lamps 106 by controlling the power applied to the respective arc-shaped lamps 106. . Therefore, it is easy to provide a proper radiation emission intensity distribution of the crystal circle W. Therefore, it is possible to appropriately control the temperature of the wafer w in the radiation direction of the wafer W. As mentioned above, a temperature = cloth can easily occur along the radiation direction of the wafer ... According to the second embodiment of the present invention, by controlling the temperature of the wafer W in the radiation direction along the wafer w described above, it is possible to control the surface of the circle W along the radiation direction during the heating of the wafer w. The temperature distribution, for example, makes the surface temperature of the wafer W highly uniform when the wafer w / m degree is increased. Furthermore, since the wafer w is rotated by these lamps during heating of the wafer w, the surface temperature of the wafer w can be more uniformly held during the heating or processing of the wafer w. In addition, only the power supplied to the lamps 106 in the direction of radiation must be controlled. Therefore, control can be easily performed. Furthermore, by placing the lamps 106 on a similar ring facing the wafer, it is possible to reduce the radiated light from the portion where the heating portion of the wafer W is not provided. Therefore, it is possible to reduce energy loss. A third embodiment of the present invention will be described with reference to Figs. In this cylinder embodiment, the 'heating lamp system includes the above-mentioned double-ended arc lamps 1⑽, and G 3 S and other single-ended lamps 08, where each single-ended lamp 1 has only one connection to a power supply line The end. Each single-ended lamp 108 is approximately spherical. As shown in FIG. 7B, these single-ended lamps 108 are placed in an area corresponding to the area around the wafer w. For example, the width level from the outer edge of the area is 8 〇The area of variable rice. These single-ended lamps 108 are placed in this area in order to form a predetermined concentric circle, and these (please read the precautions on the back before filling this page) Order --------- line g -28 1222140 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (26 The extended end of the single-ended lamp 108 (opposite to these power supply ends) is directed to the wafer W, as shown in Figure 2 3. As shown, a large number of single-ended lamps 108 are used. In addition, similar to the second embodiment described above, the arc-shaped lamps 106 are placed on the periphery to form the ring-shaped lamps and form many concentric circles. Other structures It is the same as the first embodiment. By using the third embodiment of the present invention described above, it is possible to reduce the surface temperature distribution of the wafer W during the heating of the wafer W. Therefore, it is possible to avoid slipping. That is, the placement part 122 of the wafer w is made of carbonized carbide, and has a higher density and a larger specific heat than the wafer W made of silicon. Therefore, the placement part 122 The temperature increase rate is k ° faster than that of the wafer w. Therefore, the heat around the wafer W runs to the placement part. 22 and the temperature around the wafer w becomes lower than the temperature of the center of the wafer W. A temperature distribution on the surface of the wafer w may cause slippage. In the third embodiment, such single-ended lamps are used. 〇8 and the wafer w can be heated around. Because these single-ended lamps 1 08 are tiny and approximately spherical and extend vertically, they may be placed at high density. In addition, because the power is supplied to each The single-ended lamp 108 may increase the luminous energy of a unit area. Therefore, it is possible to make the luminous energy applied to the periphery of the wafer w greater than the luminous energy applied to the wafer trade center during the heating of the wafer w. It is therefore possible There is more heat around the wafer W than the center of the heated wafer w. Therefore, it is possible to avoid temperature distribution on the surface of the wafer W. Therefore, it is possible to avoid the occurrence of slippage and improve the output. Even when the component 122 is placed In the case where the temperature of the placing member 122 increases with the material, the same as the temperature of the wafer W increases. 'Because the side wall of the processing box 142 (please read the precautions on the back before filling this page) Order h --- ^ ---- -Line j 29- 1222140

5. Description of the invention (27) The temperature increases slowly again, and a large amount of heat can be removed from the wafer circle, and the surface temperature distribution of the wafer w can occur as described above. Therefore, the use of a single-ended lamp 108 for heating the periphery of the wafer w as described above is also effective and advantageous in this case. &gt; FIG. 24A shows the use of the heating lamp system combining the single-ended lamps 108 and the double-ended arc lamps 106 in the third embodiment described above on the surface of the wafer: the wafer W when annealing is performed Surface temperature as a function of time. In addition, FIG. 24B shows the surface of the wafer w when an annealing process is performed on the wafer W using a heating lamp system in which the double-ended straight strip lamps are arranged in parallel in the related art shown in FIGS. The change in temperature over time is a characteristic of π. In any example, the temperature is increasing at a rate of 1 second per second, and it is possible to measure the surface temperature of the wafer w at the centimeters, 35 centimeters, Ms, and 105 dm from the center of the wafer w. As shown in these figures, when the heating lamp system according to the third embodiment of the present invention is used, the surface temperature of g circle W is approximately uniform during temperature increasing treatment. Therefore, it has been proved that the wafer W can be heated when the surface temperature of the wafer w is uniform from the center to the periphery along the radiation direction. Therefore, it is possible to control the radiation temperature distribution of the crystal circle W and ‘avoid the occurrence of slippage. In these specific embodiments of the present invention, a plurality of ring-shaped light emitting portions having a common center and different sizes should be formed. In this example, it is possible from a single ring-shaped lamp, or from many arc-shaped lamps placed around, or from the polygonal shape of many straight, double-ended lamps placed around as shown in Figure 25. The genus forms each ring-shaped light-emitting part. Therefore, it is possible to place many polygonal lights at a predetermined pitch, and each polygonal light contains a number of common -30-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the back Note for this page, please fill out this page) ---- Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1222140

Employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed heart and straight strip lights of different sizes. Similarly, when high luminous intensity efficiency is maintained, temperature control can be performed along the radiation direction of the wafer w. In addition, any heat treatment system according to the present invention can be applied to a deposition process, such as a chemical vapor deposition process, an oxidation process, etc., instead of the annealing process described above. It is also possible to rotate the heating lamp system with the placement part of the wafer w in each specific embodiment of the present invention. Therefore, it is possible to heat the wafer W more uniformly. In addition, the present invention is not limited to the specific embodiments described above, and may be modified and modified without departing from the scope of the present invention. The present invention is based on Japanese priority applications Nos. 2000-1 19325 and 2000-1 19998, both of which were filed on April 20, 2000, the entire contents of which are hereby incorporated by reference. For reference. __- 31-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) —, --------- Installation -------- Order · ——---- -^ (Please read the notes on the back before filling this page)

Claims (1)

6. Applying for a patent Fangu 1. A heat treatment system, which uses a heating lamp system to apply radiant heat to an approximately circular object to be processed, and performs a predetermined heat treatment on the object to be processed. The heat treatment system includes a transfer window between the heating lamp system and the object to be processed, and a strong member for strengthening the transfer window; wherein the heating lamp system includes a plurality of lamps arranged in a concentric circle and Corresponding to the object to be processed, the strengthening member includes a plurality of members arranged in parallel. 2 · The heat treatment system according to item 1 of the patent application, in which many of these lamps include double-ended lamps. 3. The heat treatment system according to the scope of the patent application, wherein the plurality of lamps include a combination of a double-ended lamp and a single-ended lamp. 4. The heat treatment system according to item 丨 of the patent application, wherein these many lamps include arc lamps. 5. The heat treatment system according to item 1 of the patent application, wherein the plurality of lamps include strip lamps. 6. The heat treatment system according to item 1 of the scope of patent application, in which many of the lamps are arranged to form a plurality of concentric circles with different radii. 7 · If the heat treatment system of item 1 of the patent application scope further includes a sealed processing box, wherein the object to be processed is sealed and processed under a reduced pressure atmospheric condition, wherein: the transmission window is provided in a closed manner Part of the processing box; The heating lamp system is placed on the outside of the processing box and applies radiant heat to the object to be processed inside the processing box through the transmission window. This paper size is applicable to the G4 household material (CNS) A4 specification (2 to 297 cm) —————— 6. Application for patent scope 8. If the heat treatment system for patent scope μ is applied, where Temperature is controlled. 9. If the heat treatment system and system of item 1 of the patent application scope, the temperature of the window is controlled. 10. The heat treatment system according to item 8 of the application, wherein the temperature-controlled flow system causes it to flow through the reinforced member. U. The heat treatment system according to item U) of the patent application, wherein the fluid contains water. 12. The heat treatment system according to item 1 of the patent application, wherein the object system is rotated by a magnetic couple. 3. A heat treatment system which applies a light source of heat to an approximately circular object to be treated with a heating lamp system and performs a predetermined heat treatment on the object to be treated. The heat treatment system includes: A conveying window between the heating lamp system and the object to be processed; a strong member for strengthening the conveying window; wherein the 'heating lamp system includes a plurality of lamps arranged in a concentric circle corresponding to the object to be processed, the strong member The structure is such that the concentric circle crack is formed in the strong member corresponding to a plurality of lamps arranged in a concentric circle. 14. The heat treatment system of claim 13 in which many of these lamps include double ended lamps. 15. The heat treatment system according to item 13 of the application, wherein the plurality of lamps include a combination of a double-ended lamp and a single-ended lamp. 16. · If you apply for the heat treatment system of item No. 丨 3, many of these lamps -2- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm). Please request the patent fan garden to include arc lamps . 17. The heat treatment system according to item 3 of the patent application, wherein the plurality of lamps include strip lamps. &quot; ^ 18. If the heat treatment system and system of item 13 of the patent application park, many of these lamps are arranged to form many concentric circles with different radii. 19. If the heat treatment system of the scope of application for item 13 further includes a sealed processing box, wherein the object to be processed is sealed and processed under "less atmospheric conditions, where: the transmission window is closed for the processing Part of the box · = The heating system is placed on the outside of the processing box and applies light radiation heat to the object to be processed inside the processing box through the side transfer window. 20 · If the temperature of the 13th patent application scope is controlled, The treatment system, wherein the temperature of the window 21 'of the solid member is controlled by the heat treatment system of item 3 of the patent application park. Among them, the temperature is controlled. 22 The heat treatment system of item 20 of the scope of patent application is controlled. The fluid system allows it to flow through the sturdy component. The fluid contains 23 · water such as the heat treatment system item No. 22 of the scope of the patent application. Among them, the to-be-treated object 24 · the heat treatment system system No. 13 scope of the patent application is applied by The magnetic body rotates occasionally. -3-This paper ruler is a Chinese national standard &quot; ^ (CNS) A4 size (210 X 297 mm)