TWI221900B - Micro sensor, its method of manufacturing and sensing device using the same - Google Patents

Micro sensor, its method of manufacturing and sensing device using the same Download PDF

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Publication number
TWI221900B
TWI221900B TW92123157A TW92123157A TWI221900B TW I221900 B TWI221900 B TW I221900B TW 92123157 A TW92123157 A TW 92123157A TW 92123157 A TW92123157 A TW 92123157A TW I221900 B TWI221900 B TW I221900B
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Taiwan
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electrode layer
cantilever beam
humidity
base
temperature
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TW92123157A
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Chinese (zh)
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TW200508590A (en
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Guo-Bin Li
Jia-Yan Li
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Univ Nat Cheng Kung
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Publication of TW200508590A publication Critical patent/TW200508590A/en

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Abstract

A micro sensor is composed of a cantilever beam part, a second base spaced apart the cantilever beam, and an upper plate connecting the cantilever beam and the second base. The cantilever beam part includes a first base, a cantilever beam horizontally extended from the first base, an electrode layer deposited on the cantilever beam top and a humidity sensing layer coated on the electrode layer for shrinking or stretching of its length at different humidity. The upper plate is composed of a cavity and a second electrode layer deposited on the cavity. The first and second electrode layers form a capacitance and the capacitance value changes as the distance between the first and second electrode layers changes.

Description

、發明說明: 【發明所屬之技術領域】 本發明是有關於-種感測器,特別是指一種以微機電 技術製作而成的微型感測器。 【先前技術】 在眾多物理量量測中,濕度是除了溫度以外之另一重 要環境因子,生命體必須在其適應的濕度範圍内生存,細 胞及細菌等微生物必須在—定的濕度環境下才能進行繁道 與培養,且精密電子儀器必須在一定的濕度值以下才能發Description of the invention: [Technical field to which the invention belongs] The present invention relates to a kind of sensor, and particularly to a miniature sensor manufactured by micro-electromechanical technology. [Previous technology] In many physical quantity measurements, humidity is another important environmental factor besides temperature. A living body must survive within its adapted humidity range, and microorganisms such as cells and bacteria must be carried out under a certain humidity environment. Diversity and cultivation, and precision electronic equipment must be below a certain humidity value in order to develop

揮正常的功能,以及其他日常生活當中的許多事物都有A 最佳的濕度適應範圍。因此許多工業製程環境都需要靜 度嚴密而精確的監控。所以在細胞培養、生醫檢測、製程 控制及環境監測等相關領域當中’高性能的濕度感測器是 不可或缺的。 "傳統濕度感測器的感測原理包含:電容式、電阻式、濕 祝吸附式、測重式及光學式等方式,以上各類感測器雖然 各有其優點,但是仍然不免會有靈敏度低、穩定度低、線 1*生度差、響應時間長及因溫度變化造成的漂移值不易補償 等缺點。 【發明内容】 因此’本發明之目的,是在提供一種微型感測器及其 製法與使用該微型感測器之感測裝置,使其具有極高之靈 敏度、穩定度、快速之響料間及極佳之㈣線性關係, 並可對不同溫度下量測得之電容值進行補償。 1221900 5 10 於是,本發明之微型感測器,包含一濕度感測單元, 其包括:一懸臂樑部、一水平間隔設置於該懸臂樑部旁的 第二基座,及一跨接於該懸臂樑部與第二基座上的橋接板 :該懸臂樑部具有-第-基座、一由該第一基座頂面水平 往外延伸的懸臂樑、一披覆於該懸臂樑頂面的第一電極層 ,及一披覆於該第一電極層頂面並可吸附水分的濕度感測 層,且該濕度感測層會隨濕度高低而改變所吸附之水分含 =進而造成長度收縮與伸展,致使該懸臂樑產生不同程度 彎曲。該橋接板具有一形成於其底面的凹槽,及一被覆於 该凹槽内並位於該濕度感測層上方的第二電極層,該第二 電極層與該第一電極層共同形成一電容,該電容之電容: 是隨該懸臂樑彎曲,使該第一電極層與該第二電極層間之 距離改變而產生變化。 15 移濕度感測單元之製造方法包含 20 =平平板狀之絕緣基材頂面上之—端部沉積金屬作為^ 電極層,(B )塗佈—可隨濕度變化而收縮與伸展的渴声 =層於該第-電極層之頂面;(c)於該基材之—端部^ 端部間以钮刻技術分割’並形成一具有一第一基座虚 由該第-基座頂面往外延伸之懸臂樑的懸臂樑部,及」 二该懸臂樑末端間隔設立之第二基座;⑻於一表面形成 二雷曰的橋接板上,進仃金屬沉積於該凹槽内,形成-第 料將該橋接板以其凹槽朝下跨接於該懸臂樑 土座之上,使該第二電極層位於該第一電極層 方,而由該第一、第二電極層形成一電容。 5 1221900 5 10 15 使用該微型感測器之感測裝置包含··一微型感測器及 一處理單元。該微型感测器包括一濕度感測單元及一溫度 感測單元。該濕度感測單元具有一懸臂樑部、一水平間隔 设置於該懸臂樑部旁的第二基座,及一跨接於該懸臂樑部 與第二基座上的橋接板。該懸臂樑部具有一第一基座、一 由。亥第基座頂面水平往外延伸的懸臂樑、一披覆於該懸 臂樑頂面的第-電極層,及一披覆於該第一電極層頂面並 可吸附水分的濕、度感消u,且該濕度感測層t隨濕度高低 而改文所吸附之水分含量進而造成長度收縮與伸展,致使 該懸臂樑產生不同程度彎曲。該橋接板具有一形成於其底 面的凹槽’及-披覆於該凹槽内並位於該濕度感測層上方 的第電極層,該第二電極層與該第一電極層共同形成一 電合忒電谷之電容值是隨該懸臂樑彎曲,使該第一電極 層與該第_電極層間之距離改變而產生變化。該溫度感測 單元具有~設置於該第二基座頂面上之一可感測溫度之改 變而產生電阻值變化的電阻塊,及二分別連接於該電阻塊 二相反端的導電塊。兮_饰„ β丄 …* 早70具有一電容計、-濾波器 、一訊號轉換器及一數 20 感測單元之第…第測該濕度 WMi 電容值的該渡波器接收 ==出之類比電流值,並過渡該類比輪出電 該濾、皮民其中所含有的雜訊值’該訊號轉換器是將 二理二:類比電流訊號轉換為數位訊號,該數位訊 號處理㈣作為接㈣電容計所量 該訊號轉換器輪出$+ 4 电谷值及接收 出之數位電流訊號並計算出該電阻塊之電 6 阻值,、由電阻值推算出之環境溫度,以計算出因溫度變化 所造成之電容值漂移量,用於校正實際量測出之電容值。 本叙明之功效能提供一微型感測器及其製造方法。應 用此微型感測器可快速地量測出精確的環境座度。 【實施方式】 有關本發明t前述及其他技術内容、特點與功效,在 以下配合參考圖式之一較佳實施例的詳細說明中,將可清 楚的明白。 參閱圖1與圖2,本發明之微型感測器2之較佳實施例 可配σ處理單元5、-顯示單元6,及一電源供應單元7 共同組成一感測裝置。 該微型感測器包含一濕度感測單元3及一溫度感測單 元4、 a該濕度感測單元3包括一具有一第一基座311的懸臂標 ^ 31 與該懸臂樑部31相間隔的第二基座32、一跨接 於該懸臂樑部31與第二基座32上的橋接板%。 • 亥懸#樑部3 1之第一基座3 11概略呈直立方柱形,且 «臂樑部31更具有—由該第—基座311頂面水平往外延 伸的長條板狀懸臂樑312、一披覆於該懸臂樑312頂面的第 電極層313,及一披覆於該第一電極層313頂面並可吸附 水分的濕度感測層314。 該第一基座311及該懸臂樑312是由絕緣材質所製成, 例如矽、氧化矽、氮化矽、玻璃或石英等材質,但實施上不 以上述之材質為限。該第一基座311底面及該懸臂樑312之 1221900 頂面具有一蝕刻過程中遺留下之罩幕層22,該罩幕層22不 影響本發明之功能,所以不在此多作說明。 5 該第一電極層313是由導電之金屬材料或合金所構成 ,例如金/鉻(Aii/Cr)、金/鈇(Au/Ti)、鋁燦(Ai/c小铭/ 欽(Al/Ti)、銀/鉻(Ag/Cr)、銀/鈦(Ag/Ti)、銅/絡(㈤心 )或銅/鈦(Cu/Ti)等金屬,但實施上不限於上述之組合。 10 該濕度感測層314是一種可吸收水蒸氣之聚合物薄膜 ,並可隨濕度高低而改變所吸附之水分含量進而造成長产 收縮與伸展,本實施例中該濕度感測層314是以聚亞醯^ (polyimide)所組成,但實施時不以上述之材質為限。當 該濕度感測層314隨濕度高低而收縮與伸展,會致使該懸 #襟3 12產生不同程度彎曲。 ; 15 20 力、聚碳酸醋或聚二甲矽氧烷),其具有一形成於其底面6 凹槽331,及-披覆於該凹们31内並位於該濕度感㈣ 314上方的第二電極層332,該第二電極層说之組成材半 與該第一電極4 313之組成材料相同,於此不再說明。驾 第二電極I 332與第-電極層313間保持—距離,而共^ 形成一電容,且該電容之電容值會隨該懸臂樑312彎=: ^吏該第-電極層313與該第二電極層332間之距離改變 時產生變化。該懸臂樑312之數量可依設計之需要而择加 =所有之懸臂樑…面上之第一電極層313皆須二生 連接在一起,且都須位於該橋接板33第二電極層Μ〗之下 方’如此才能形成一電容,故實施上該懸臂樑312之數旦 8 不以一個為限。 *該溫度感測單元4用於量測環境溫度,具有-沉積於 該第-基座32頂面上之_可感測溫度之變化而產生電阻值 文化的電阻塊41 ’及二分別連接於該電阻塊41二相反端的 V電塊42。其運作原理是藉由該導電塊供給—電流於該電 阻塊41之兩相反端,再量測流經該電阻塊41之電屡,由 /電壓與電极之比值推异出該電阻塊41之電阻值。本實施 例令,該電阻塊41是由鈾/鉻合金(pt/c〇或錄(则) 所製成’而導電塊42之材質與該第-、第二電極層311、 332之材質相同,就不再多作說明,但實施上不以上述之 質為限。. 該處理單元5是一量測電路晶片,具有-電容計51、 遽波器52、一訊號轉換器53及一數位訊號處理器μ。該 電容計51用於量測該第一電極層3i3與該第二電極層332 :之電谷值,並輸出至該數位訊號處理器54。該濾波器Μ ::溫度感測單元4輸出之類比電壓值,並過濾該類比 =電壓訊號,以降低其中所含有的雜訊值,提高訊號/雜 比值’以增進輸出電麼訊號之精確度。該訊號轉 =53是將該錢器52輸出之類比訊號轉換為數位 該數位職處㈣M是絲接㈣電容計Η所量 電容值,及接收該訊號轉換器53輪出之數位電麼訊 、二十异出該電阻塊41之電阻值,由電阻值推算出之環境 ::…计异出因溫度變化所造成之電容值漂移量,用於 里測出之電容值,以計算該溫度下之準確濕度值 1221900 該顯不單元6適用於顯示溫度及濕度值。該電源供應 單元7是用於提供該處理單元5及該顯示單元6所須之電 源。該顯不單元6及該電源供應單元7為一般常見之電子 設備,在此不再多作說明。 針對本發明之功效,以下以測試數據與圖形加以說明 與證明: >照圖3,其顯示該處理單元5之電容計5丨量測該濕 度感測單元3之第一、第二電極層313、332間的電容值時 ίο 之響應時間圖。當於〇秒時,將相對濕度從2〇 %加濕到4〇 %,電容量測值之信號強度由〇至丨的響應時間為M〇秒 。由此可知該濕度感測單元3對於濕度改變之反應非常快 速0 15 20 參照圖4,其顯示該電容計5 i量測出該濕度感測單元 3之第一、第二電極層313、332間的電容值與濕度變化之 關係,其中電容值(nF)為縱軸,相對濕度(% )為橫軸。由圖 4中可看出在25°C、5G°C、75t:等溫度下,其量測曲線皆 大致呈線性對應關係,即相對濕度愈高,電容量測值愈高 ,但量測之電容值會受到溫度之影響。當溫度上升時其量 測曲線斜率亦隨之上升,亦即其量測電容值對濕度之靈: 度是隨溫度上升而提高的。 ,』、目5,丨顯示量測電容值相對於濕度時之靈敏度與 溫度之關係,其中靈敏度(nF/% RH)為縱軸,溫度 轴。分別在25〇C、衰及咖時,其靈敏度分別為= 10 1221900 nF/%R.H. ^ 3 if, 〇R.H·及7.74 nF/%R.H·。由此可知其靈 敏度與溫度之關係I $ _ /、 、 ’、疋呈現一〕人曲線闕係。也就是說該濕度 感測單元3量測ψ令帝6 /士曰/ _ 、 、之電谷值疋須經量測環境之溫度加以補 償校正後才能精確得到相對濕度。 5 多…、圖6,其顯示該溫度量測單元之電阻塊41之電阻 值與咖度之關係、’其中電阻值(Ghm)為縱軸,溫度(^)為橫 轴。由圖6中可知該電阻值與溫度之關係呈現良好之線性 關係。可由量測得到之電阻值推算出精確之環境溫度。 10 —參照圖7,其顯示該溫度補償後計算出之電容校正值與 實=濕度之關係,其中電容校正值(nF)為縱軸,濕度rh) 15 為杈軸。而圖8是顯示溫度補償後計算出之電容校正值再 推算出之濕度與實際濕度之關係,其中推算出之濕度(% RH)為縱軸,實際濕度(% RH)為橫軸。由圖7及圖8可知溫 度補償後計算出之電容值與實際濕度呈現良好之線性關係 ,推算出之濕度與實際濕度也幾乎相同,由此可知本發明 使用該微型感測器之感測裝置確實可量測到精確之環境濕 度0 以下續針對該微型感測器2的製造方法加以說明。 20 如圖9所示,於一矽、玻璃或石英等材質之基板21, 沉積矽氮化物(SixNy)或二氧化矽(Si〇2)於該基板21之頂面 與底面上作為供蝕刻之罩幕層22。 如圖10所示,以電阻性之金屬沈積(例如:鉑/鉻)於 。亥基板21頂面之罩幕層22的一端部上,而形成該電阻塊 41 〇 11 1221900 义如圖u所示,以金/路合金為材料,在該電阻塊4 前、後端分別沉積形成該二導電塊42,由於視圖角 5 係在圖11中只見—導電塊42,並同時在於該基板2Γ頂面 之罩幕層22的另—端部上沉積形成該第-電極層313。 如圖12所示’於該第—電極層313上塗佈 感測層314。 、度 圖 所示蝕刻該基板21頂面之兩端部間之 層22及姓刻該基板21底面之部分罩幕層22,分別形成缺 口 MU 8U。 风缺 10 如圖14所示,經由缺口 821、822對該基板21進行蝕 刻出第-、第二基座311、32,及該懸臂樑M2。 如圖15所不,於另一石夕、玻璃或石英等材質之基板21 面進行钮刻’而形成該具有凹槽33!的橋接板33。 15 圖6所不,以金/鉻合金為材料,於該橋接板η 凹槽331内沉積金屬’而形成該第二電極層332。 如圖17所示,將該橋接板33以其凹槽331朝下地〆 接於該懸編P31與該第二基座32之上,使該第二電^ 層332位於該第一電極層313之上方,而由該第— 電極層313、332形成電容。 20 藉以上步驟便可製成該微型感測器2。 至於本發明之感測裝置的組成,可將該第-電極# 313 與該第二電極層332以導線接5丨至—電容計51 (可見於圖 2),再由該電料51電連接至該處理單元5。並將該溫度 感測單元4之電阻值訊號輸出至該處理單元以(可見於 12 1221900 圖2 ),即組成該感測裝置。 歸納上述,本發明利用該濕度感測單元3之濕度感測 層3 14,吸收環境濕度中水分,並造成該懸臂樑3 12彎曲, 導致第一、第二電極層3 13、332間之電容值改變,再以溫 度感測單兀4之電阻塊41檢測出環境溫度加以校正補償該 · 電容值因溫度而造成之信號漂移,而得到一與環境濕度呈 極佳線性關係之電容值,再經處理單元5之運算後得到一 濕度值並顯不於該顯示單元6上,提供一精確之濕度值, 故確實能達到發明之目的。 _ ίο 惟以上所述者,僅為本發明之較佳實施例而已,當不 能以此限定本新型實施之範圍,即大凡依本發明申請專利 範圍及新型說明書内容所作之簡單的等效變化與修飾,皆、 應仍屬本發明專利涵蓋之範圍内。 - 【固式簡單說明】 15 圖1是該較佳實施例之微型感測器的立體結構示意圖 ,並顯示其受一電容計量測的連接關係; 圖2是本發明感測裝置之一較佳實施例的功能方塊示 意圖; 20 圖3是該較佳實施例之濕度感測單元的電容量測值與 ’ 響應時間關係圖; - 圖4是該較佳實施例在不同溫度下之濕度感測單元的 輸出電容值與相對濕度的關係圖; - 圖5是該較佳實施例之電容對濕度的靈敏度與溫度之 關係圖; 13 1221900 圖6是該較佳實施例之一 阻值與溫度之關係圖; 溫度感測單元之電阻塊的電 圖7是該較佳實施例經溫度補償後之電容校正值盥實 際濕度之關係圖,· 圖8疋該較佳貫施例經温度補償後之濕度計算值與實 際濕度值之關係圖;及 圖9〜17是本發明之微型感測器之製造過程示意圖。For normal functions, and many other things in daily life, there is an optimal humidity adaptation range. As a result, many industrial process environments require tight and precise monitoring. Therefore, high-performance humidity sensors are indispensable in related fields such as cell culture, biomedical testing, process control, and environmental monitoring. " The sensing principles of traditional humidity sensors include: capacitive, resistive, wet adsorption, weight measurement, and optical methods. Although the above types of sensors have their own advantages, there are still unavoidable Shortcomings include low sensitivity, low stability, poor line 1 * productivity, long response time, and difficult to compensate drift values due to temperature changes. [Summary of the Invention] Therefore, the object of the present invention is to provide a miniature sensor, a method for manufacturing the same, and a sensing device using the miniature sensor, so that it has extremely high sensitivity, stability, and fast response time. And excellent linear relationship, and can compensate the capacitance value measured at different temperatures. 1221900 5 10 Therefore, the miniature sensor of the present invention includes a humidity sensing unit, which includes: a cantilever beam portion, a second base disposed horizontally beside the cantilever beam portion, and a bridge across the cantilever beam portion. Cantilever beam portion and bridge plate on the second base: The cantilever beam portion has a first base, a cantilever beam extending horizontally outward from the top surface of the first base, and a cantilever beam covering the top surface of the cantilever beam. The first electrode layer and a humidity sensing layer covering the top surface of the first electrode layer and capable of absorbing moisture, and the humidity sensing layer will change the absorbed moisture content with the humidity level, thereby causing length contraction and Stretching causes the cantilever beam to bend to varying degrees. The bridge plate has a groove formed on a bottom surface thereof, and a second electrode layer covering the groove and located above the humidity sensing layer. The second electrode layer and the first electrode layer together form a capacitor. The capacitance of the capacitor is changed as the distance between the first electrode layer and the second electrode layer is changed as the cantilever beam is bent. 15 The manufacturing method of the humidity-shifting sensing unit includes 20 = flat plate-shaped insulating substrate on the top surface-metal deposited at the end as an electrode layer, (B) coating-thirst that can shrink and stretch with humidity change = Layer on the top surface of the first-electrode layer; (c) at the -end of the substrate ^ the end is divided by a button technique and formed with a first base virtual from the top of the first-base The cantilever beam portion of the cantilever beam extending outward, and the second base set up at two ends of the cantilever beam; a bridge formed by two thunder on one surface, and metal deposited in the groove to form -The first material bridges the bridge plate with its groove downwardly over the cantilever soil seat, so that the second electrode layer is located on the side of the first electrode layer, and the first and second electrode layers form a capacitance. 5 1221900 5 10 15 A sensing device using the miniature sensor includes a miniature sensor and a processing unit. The miniature sensor includes a humidity sensing unit and a temperature sensing unit. The humidity sensing unit has a cantilever beam portion, a second base disposed horizontally beside the cantilever beam portion, and a bridge plate bridged between the cantilever beam portion and the second base. The cantilever beam portion has a first base and a base. A cantilever beam extending horizontally outward from the top surface of the helium base, a first electrode layer covering the top surface of the cantilever beam, and a dampness and degree of humidity covering the top surface of the first electrode layer and capable of adsorbing moisture. u, and the moisture content of the moisture sensing layer t changes with the humidity, and then the length shrinks and stretches, causing the cantilever beam to bend to different degrees. The bridge plate has a groove formed on the bottom surface thereof and a second electrode layer covering the groove and located above the humidity sensing layer, and the second electrode layer and the first electrode layer together form an electrical circuit. The capacitance value of the combined electric valley is changed as the cantilever beam is bent, so that the distance between the first electrode layer and the _th electrode layer changes. The temperature sensing unit has a resistance block provided on the top surface of the second base which can sense a change in temperature and generate a resistance value change, and two conductive blocks respectively connected to two opposite ends of the resistance block.西 _ 饰 „β 丄… * The early 70th has a capacitance meter, -filter, a signal converter and a 20th sensing unit. The first to measure the humidity WMi capacitance value of the wave receiver reception == analogue The current value, and the noise value contained in the filter and the electric power of the analog wheel will be transferred. The signal converter is the second principle: the analog current signal is converted into a digital signal, and the digital signal is processed as a connection capacitor. The signal converter calculates the $ + 4 electric valley value and the digital current signal received and calculates the electrical resistance value of the resistance block. The ambient temperature calculated from the resistance value is used to calculate the temperature change. The resulting capacitance value drift is used to correct the actual measured capacitance value. The functions of this description can provide a miniature sensor and its manufacturing method. The application of this miniature sensor can quickly measure the accurate environment [Embodiment] The foregoing and other technical contents, features, and effects of the present invention will be clearly understood in the following detailed description of a preferred embodiment with reference to the drawings. Refer to FIG. 1 and FIG. 2 , This A preferred embodiment of the micro sensor 2 may be equipped with a sigma processing unit 5, a display unit 6, and a power supply unit 7 to form a sensing device. The micro sensor includes a humidity sensing unit 3 and a Temperature sensing unit 4, a The humidity sensing unit 3 includes a cantilever beam ^ 31 having a first base 311, a second base 32 spaced from the cantilever beam portion 31, and a bridge across the cantilever beam portion 31 and the bridging plate on the second base 32. • The first base 3 11 of the suspending # 梁 部 3 1 is roughly a cubic column, and the «arm beam portion 31 has—by the first—base A long plate-shaped cantilever beam 312 extending horizontally outward from the top surface of 311, a first electrode layer 313 covering the top surface of the cantilever beam 312, and a humidity covering the top surface of the first electrode layer 313 and capable of adsorbing moisture Sensing layer 314. The first base 311 and the cantilever beam 312 are made of insulating materials, such as silicon, silicon oxide, silicon nitride, glass, or quartz, but the implementation is not limited to the above materials The bottom surface of the first base 311 and the 1221900 top mask of the cantilever beam 312 have a mask layer 22 left over during the etching process, The cover layer 22 does not affect the function of the present invention, so it will not be described here. 5 The first electrode layer 313 is made of a conductive metal material or alloy, such as gold / chrome (Aii / Cr), gold / 鈇 ( Au / Ti), Alcan (Ai / c Xiaoming / Qin (Al / Ti), Silver / Chromium (Ag / Cr), Silver / Titanium (Ag / Ti), Copper / Plastic (Heart) or Copper / Titanium (Cu / Ti) and other metals, but the implementation is not limited to the above combinations. 10 The humidity sensing layer 314 is a polymer film capable of absorbing water vapor, and can change the adsorbed moisture content with the humidity level to cause long In this embodiment, the humidity sensing layer 314 is made of polyimide, but it is not limited to the above materials during implementation. When the humidity sensing layer 314 shrinks and expands with the humidity level, the suspension flaps 12 will be bent to different degrees. 15 20 force, polycarbonate or polydimethylsiloxane), which has a groove 331 formed on its bottom surface, and-a second covering the inside of the recess 31 and located above the humidity sensor 314 The electrode layer 332, the constituent material of the second electrode layer and the constituent material of the first electrode 4 313 are the same, and will not be described here. The second electrode I 332 is kept at a distance from the first electrode layer 313, and a capacitor is formed in total, and the capacitance value of the capacitor will bend with the cantilever beam 312 =: the first electrode layer 313 and the first electrode layer 313 A change occurs when the distance between the two electrode layers 332 changes. The number of the cantilever beams 312 can be selected according to the design requirements. The first electrode layer 313 on all the cantilever beams must be connected together in a second life, and all must be located on the second electrode layer M of the bridge plate 33. Below this, a capacitor can be formed, so the number of deniers 8 on the cantilever beam 312 is not limited to one. * The temperature sensing unit 4 is used to measure the ambient temperature, and the resistance blocks 41 ′ and -2 which are-deposited on the top surface of the-base 32 and can sense temperature changes to generate a resistance value culture are respectively connected to The two opposite ends of the resistor block 41 are the V electric block 42. Its operating principle is that the conductive block is supplied with a current at two opposite ends of the resistive block 41, and then the electricity flowing through the resistive block 41 is measured, and the resistive block 41 is deduced from the ratio of / voltage to the electrode. The resistance value. In this embodiment, the resistance block 41 is made of uranium / chromium alloy (pt / c0 or (), and the material of the conductive block 42 is the same as that of the first and second electrode layers 311 and 332. No more explanation, but the implementation is not limited to the above quality. The processing unit 5 is a measurement circuit chip, which has a capacitance meter 51, an oscillator 52, a signal converter 53 and a digital Signal processor μ. The capacitance meter 51 is used to measure the electric valley values of the first electrode layer 3i3 and the second electrode layer 332, and output to the digital signal processor 54. The filter M :: temperature sense Measure the analog voltage value output by unit 4, and filter the analog = voltage signal to reduce the noise value contained in it and increase the signal / noise ratio value to improve the accuracy of the output electrical signal. The signal turn = 53 is to The analog signal output by the money machine 52 is converted into digital. The digital office is M. The capacitance value is measured by a wire-connected capacitor. The digital signal received by the signal converter 53 rounds. The resistance value of 41, the environment calculated from the resistance value: ... The capacitance value drift is used to measure the capacitance value to calculate the accurate humidity value at that temperature. 1221900 The display unit 6 is suitable for displaying temperature and humidity values. The power supply unit 7 is used to provide the processing unit 5 And the power supply required by the display unit 6. The display unit 6 and the power supply unit 7 are generally common electronic equipment, and will not be described in detail here. For the efficacy of the present invention, the test data and graphics are described below. & Proof: > According to FIG. 3, it shows a response time graph when the capacitance meter 5 of the processing unit 5 measures the capacitance value between the first and second electrode layers 313 and 332 of the humidity sensing unit 3. When the time is 0 seconds, the relative humidity is humidified from 20% to 40%, and the response time of the signal strength of the capacitance measurement from 0 to 丨 is M0 seconds. From this, it can be known that the humidity sensing unit 3 is sensitive to humidity. The changing response is very fast. 0 15 20 Referring to FIG. 4, it is shown that the capacitance meter 5 i measures the relationship between the capacitance value and the humidity change between the first and second electrode layers 313 and 332 of the humidity sensing unit 3. Capacitance (nF) is the vertical axis, relatively wet (%) Is the horizontal axis. It can be seen from Figure 4 that at 25 ° C, 5G ° C, 75t: and other temperatures, the measurement curves are approximately linearly corresponding, that is, the higher the relative humidity, the more the capacitance is measured. Higher, but the measured capacitance value will be affected by temperature. When the temperature rises, the slope of the measurement curve will also increase, that is, the spirit of the measured capacitance value to humidity: the degree increases with the temperature. , 』, 目 5 , 丨 shows the relationship between sensitivity and temperature when measuring the capacitance value with respect to humidity, where the sensitivity (nF /% RH) is the vertical axis and the temperature axis. When the temperature is 25 ° C, the attenuation and the The sensitivity is = 10 1221900 nF /% RH ^ 3 if, 〇RH · and 7.74 nF /% RH ·. It can be seen from this that the relationship between sensitivity and temperature I $ _ /,, ′, 疋 shows a] human curve system. That is to say, the humidity sensing unit 3 measures ψLing 6 / Shi Yue / _,, and the electric valley value of 疋, which must be compensated and corrected after measuring the temperature of the environment to accurately obtain the relative humidity. Fig. 6 shows the relationship between the resistance value and the resistance of the resistance block 41 of the temperature measuring unit, where 'Ghm' is the vertical axis and temperature (^) is the horizontal axis. It can be seen from Fig. 6 that the relationship between the resistance value and the temperature shows a good linear relationship. The precise ambient temperature can be calculated from the measured resistance value. 10 —Refer to FIG. 7, which shows the relationship between the capacitance correction value calculated after the temperature compensation and real = humidity, where the capacitance correction value (nF) is the vertical axis and humidity rh) 15 is the branch axis. Fig. 8 shows the relationship between the calculated humidity correction value and the calculated humidity after the temperature compensation, and the relationship between the calculated humidity and the actual humidity. The calculated humidity (% RH) is the vertical axis, and the actual humidity (% RH) is the horizontal axis. It can be seen from FIG. 7 and FIG. 8 that the calculated capacitance value and the actual humidity show a good linear relationship after the temperature compensation, and the calculated humidity and the actual humidity are almost the same. Therefore, it can be known that the sensing device using the miniature sensor of the present invention It is indeed possible to measure the precise ambient humidity 0. The method of manufacturing the micro sensor 2 will be described below. 20 As shown in FIG. 9, a silicon nitride (SixNy) or silicon dioxide (Si02) is deposited on a substrate 21 made of silicon, glass, or quartz on the top and bottom surfaces of the substrate 21 for etching.壳 幕 层 22。 Cover layer 22. As shown in Figure 10, a resistive metal (eg, platinum / chromium) is deposited on. The resistor block 41 is formed on one end of the mask layer 22 on the top surface of the substrate 21, as shown in Fig. U. The gold / road alloy is used as the material, and the resistor block 4 is deposited at the front and rear ends respectively. The two conductive blocks 42 are formed, because the viewing angle 5 is only seen in FIG. 11-the conductive blocks 42, and at the same time, the first electrode layer 313 is deposited on the other end of the mask layer 22 on the top surface of the substrate 2 Γ. As shown in FIG. 12, a sensing layer 314 is coated on the first electrode layer 313. The layer 22 between the two ends of the top surface of the substrate 21 is etched as shown in the figure, and a part of the mask layer 22 engraved with the bottom surface of the substrate 21 is respectively formed into a gap MU 8U. Wind gap 10 As shown in FIG. 14, the substrate 21 is etched through the notches 821 and 822 to form the first and second bases 311 and 32, and the cantilever beam M2. As shown in FIG. 15, a button engraving is performed on the substrate 21 surface of another material such as stone, glass, or quartz to form the bridge plate 33 having the groove 33 !. As shown in FIG. 6, the second electrode layer 332 is formed by depositing metal 'in the groove 331 of the bridge plate n using gold / chrome alloy as a material. As shown in FIG. 17, the bridge plate 33 is downwardly connected to the overhang P31 and the second base 32 with its groove 331 facing downward, so that the second electrical layer 332 is located on the first electrode layer 313. Above this, the first electrode layers 313 and 332 form a capacitor. 20 The micro sensor 2 can be manufactured by the above steps. As for the composition of the sensing device of the present invention, the first electrode # 313 and the second electrode layer 332 can be connected by a wire 5 to the capacitor meter 51 (see FIG. 2), and then electrically connected by the electric material 51 To this processing unit 5. And the resistance value signal of the temperature sensing unit 4 is output to the processing unit (see 12 1221900 Fig. 2), and the sensing device is constituted. To sum up, the present invention uses the humidity sensing layer 3 14 of the humidity sensing unit 3 to absorb the moisture in the ambient humidity and cause the cantilever beam 3 12 to bend, resulting in the capacitance between the first and second electrode layers 3 13 and 332. The value changes, and then the temperature sensing unit 4 detects the ambient temperature to correct the compensation. The capacitance value drifts due to temperature, and a capacitance value with an excellent linear relationship with the ambient humidity is obtained. After the calculation by the processing unit 5, a humidity value is obtained and displayed on the display unit 6, and an accurate humidity value is provided, so the object of the invention can be really achieved. _ ίο However, the above are only the preferred embodiments of the present invention. When the scope of the implementation of the new model cannot be limited by this, that is, the simple equivalent changes made according to the scope of the patent application of the present invention and the content of the new specification, and Modifications, both, should still fall within the scope of the invention patent. -[Simple description of solid type] 15 Figure 1 is a schematic diagram of the three-dimensional structure of the micro sensor of the preferred embodiment, and shows its connection relationship measured by a capacitance measurement; Figure 2 is a comparison of a sensing device of the present invention Functional block diagram of the preferred embodiment; 20 Figure 3 is the relationship between the measured capacitance and the response time of the humidity sensing unit of the preferred embodiment;-Figure 4 is the humidity sensing of the preferred embodiment at different temperatures Figure 5 shows the relationship between the output capacitance value and the relative humidity of the measuring unit;-Figure 5 is the relationship between the sensitivity of the capacitor to humidity and temperature in the preferred embodiment; 13 1221900 Figure 6 is the resistance value and temperature in the preferred embodiment The relationship diagram; The electrical diagram of the resistance block of the temperature sensing unit is the relationship diagram of the actual humidity of the capacitance correction value after the temperature compensation in the preferred embodiment. The relationship between the calculated humidity and the actual humidity; and Figures 9-17 are schematic diagrams of the manufacturing process of the miniature sensor of the present invention.

14 1221900 【圈式之主要元件代表符號說明】 2 微型感測器 3 濕度感測單元 31 懸臂樑部 311 第一基座 312 懸臂樑 313 第一電極層 314 濕度感測層 32 第二基座 33 橋接板 331 凹槽 332 第二電極層 4 溫度感測單元 電阻塊 導電塊 處理單元 電容計 濾、波器 訊號轉換器 數位訊號處理器 顯示單元 電源供應單元 基板 罩幕層 〜822缺口 1514 1221900 [Description of the main components of the circle type] 2 Miniature sensor 3 Humidity sensing unit 31 Cantilever beam section 311 First base 312 Cantilever beam 313 First electrode layer 314 Humidity sensing layer 32 Second base 33 Bridge 331 Groove 332 Second electrode layer 4 Temperature sensing unit Resistive block Conductive block processing unit Capacitance filter, wave signal converter Digital signal processor Display unit Power supply unit Substrate cover ~ 822 notch 15

Claims (1)

1221900 拾、申請專利範圍: 1 · 一種微型感測器,包含: 濕度敷测皁兀,包括 由該第一基 懸臂樑部’具有一第一基座 座頂面水平往外延伸的懸臂樑、一披覆於該懸臂樑 頂面的第-電極層,及一披覆於該第一電極層頂面 並可吸附水分的濕度感測層,且該濕度感測層會隨 濕度高低而改變所吸附之水分含量進而造成長^收 縮與伸展’致使該懸臂襟產生不同程度彎曲; 一第二基座,水平間隔設置於該懸臂樑部旁; 一橋接板,跨接於該懸臂樑部與第二基座上, 具有一形成於其底面的凹槽,及一披覆於該凹槽内 並位於該濕度感測層上方的第二電極層,該第二電 極層與該第一電極層共同形成一電容,該電容之電 容值是隨該懸臂樑彎曲,使該第一電極層與該第二 電極層間之距離改變而產生變化。 2.根據申請專利範圍第1項所述之微型感測器,更包含_ 溫度感測單元,具有一設置於該第二基座頂面上之一可 感測溫度之改變而產生電阻值變化的電阻塊,及二分別 連接於該電阻塊二相反端的導電塊。 3 · —種感測裝置,包含有: 一微型感測器,包括: 一濕度感測單元,具有: 一懸臂樑部,具有一第一基座、一由該第一基 16 1221900 座頂面水平彳主外延伸的懸臂樑、一披覆於該懸臂才梁 頂面的第一電極層,及一披覆於該第一電極層頂面 並可吸附水分的濕度感測層’且該濕度感測層會隨 濕度高低而改變所吸附之水分含量進而造成長度收 縮與伸展,致使該懸臂樑產生不同程度彎曲; 一第二基座,水平間隔設置於該懸臂樑部旁; 一橋接板,跨接於該懸臂樑部與第二基座上, 具有一形成於其底面的凹槽,及一彼覆於該凹槽内 並位於該濕度感測層上方的第二電極層,該第二電 極層與該第一電極層共同形成一電容,該電容之電 谷值是隨該懸臂樑彎曲,使該第一電極層與該第二 電極層間之距離改變而產生變化; 酿度感測單元’具有一設置於該第二基座頂面上 之可感測溫度之改變而產生電阻值變化的電阻塊,及 一分別連接於該電阻塊二相反端的導電塊; 一處理單元,具有一電容計、一濾波器、一訊號轉換 為及一數位訊號處理器,電容計量測該濕度感測單元之 第一、第二電極層間之電容值的該濾波器接收該溫度感 測單元輸出之類比電流值,並過濾該類比輸出電流訊號 、以降低其中所含有的雜訊值,該訊號轉換器是將該濾 波為輸出之類比電流訊號轉換為數位訊號,該數位訊號 ^ =系作為接收邊電容計所量測到之電容值,及接收 Λ K就轉換器輸出之數位電流訊號並計算出該電阻塊之 電阻僅,山啦_ 由電阻值推算出之環境溫度,以計算出因溫度 17 1221900 k化所造成之電容值漂移量,用於校正實際量測出之電 容值。 4.根據申請專利範圍第3項所述之感測裝置,更包含一供 給該處理單元所需電源的電源供應單元。 5·根據申請專利_帛3項所述之感測裝置,更包含一適 用於顯示溫度及濕度值的顯示單元。 6· —種微型感測器的製造方法,包含以下步驟: (A) 於一水平平板狀之絕緣基材頂面上之-端部沉 積金屬作為一第一電極層; (B) 塗佈—可隨濕度變化而收縮與伸展的濕度感測 層於該第一電極層之頂面; (C) 於該基材之一端部與另一端部間以蝕刻技術分割 ’並形成-具有—第_基座與—由該第—基座頂面往外 延伸之懸臂樑的懸臂樑部,及一與該懸臂樑末端間隔設 立之第二基座; (D)於一表面形成_凹槽的橋接板上,進行金屬沉積 於該凹槽内,形成一第二電極層;及 (E )將該橋接板以复 ,、凹乜朝下跨接於該懸臂樑部與該 第一基座之--^,使該裳_ Φ 第一電極層位於該第一電極層之上 方,而由該第一、第-啻把旺 禾一電極層形成一電容。 根據申請專利範圍第6項所述之料刑_ 、、 貝尸7迷之破型濕度感測裝置的製 造方法’其中,於舟驟^ 步驟(A)中,沉積該第一電極層之 刖’先以可隨溫度而改蠻雷播 又夂電阻值之材料沉積在該基材頂 面之另一端部上,而屮& A 成為一電·阻塊,並沉積二分別電連 18 1221900 接於該電阻塊之二相反端的導電塊。1221900 The scope of the patent application: 1 · A miniature sensor, including: a humidity measuring soap, including a cantilever beam extending from the first base cantilever portion with a first base seat top surface horizontally outward, a A first electrode layer covering the top surface of the cantilever beam, and a humidity sensing layer covering the top surface of the first electrode layer and capable of adsorbing moisture, and the humidity sensing layer will be adsorbed by the humidity level. The moisture content further causes long ^ contraction and extension, causing the cantilever to bend to different degrees; a second base, horizontally arranged beside the cantilever beam portion; a bridge plate, bridging between the cantilever beam portion and the second The base has a groove formed on a bottom surface thereof, and a second electrode layer covering the groove and located above the humidity sensing layer, and the second electrode layer and the first electrode layer are formed together. A capacitor whose capacitance value changes as the cantilever beam bends so that the distance between the first electrode layer and the second electrode layer changes. 2. The miniature sensor according to item 1 of the scope of the patent application, further comprising a temperature sensing unit, which has a resistance value change caused by a temperature change on one of the top surfaces of the second base. And two conductive blocks connected to the opposite ends of the two resistor blocks, respectively. 3. A sensing device including: a miniature sensor including: a humidity sensing unit having: a cantilever beam portion having a first base and a top surface of the first base 16 1221900 A cantilever beam extending horizontally from the main outside, a first electrode layer covering the top surface of the cantilever beam, and a humidity sensing layer covering the top surface of the first electrode layer and capable of absorbing moisture, and the humidity The sensing layer will change the absorbed moisture content according to the humidity level, which will cause the length to shrink and stretch, which will cause the cantilever beam to bend to different degrees; a second base, which is horizontally arranged beside the cantilever beam portion; a bridge plate, A bridge is formed between the cantilever beam portion and the second base, and a groove is formed on the bottom surface thereof, and a second electrode layer covering the groove and located above the humidity sensing layer. The electrode layer and the first electrode layer together form a capacitor, and the electric valley value of the capacitor is changed as the cantilever beam is bent, so that the distance between the first electrode layer and the second electrode layer is changed to produce a change; 'Has a setting on the first Two resistance blocks on the top surface of the base that can sense changes in temperature and generate resistance changes, and a conductive block connected to two opposite ends of the resistance block respectively; a processing unit having a capacitance meter, a filter, a The signal is converted into a digital signal processor. The capacitor measures the capacitance between the first and second electrode layers of the humidity sensing unit. The filter receives the analog current value output by the temperature sensing unit and filters the analog. Output the current signal to reduce the noise value contained in it. The signal converter converts the analog current signal filtered to output into a digital signal. The digital signal ^ = is the capacitance measured by the receiving side capacitance meter. Value, and receive the digital current signal of the converter output from Λ K and calculate the resistance of the resistance block. Only the mountain temperature _ the ambient temperature calculated from the resistance value to calculate the capacitance value caused by the temperature 17 1221900 k Drift is used to correct the capacitance value actually measured. 4. The sensing device according to item 3 of the scope of patent application, further comprising a power supply unit for supplying power required by the processing unit. 5. The sensing device according to item 3 of the application patent_ 专利, further comprising a display unit adapted to display temperature and humidity values. 6. · A method for manufacturing a miniature sensor, comprising the following steps: (A) depositing metal as a first electrode layer on an end portion of a horizontal flat plate-shaped insulating substrate; (B) coating— A humidity sensing layer capable of shrinking and extending with the change in humidity is on the top surface of the first electrode layer; (C) is divided by an etching technique between one end portion and the other end portion of the substrate, and is formed-having—the_ The base and the cantilever beam portion of the cantilever beam extending outward from the top surface of the first base, and a second base set apart from the end of the cantilever beam; (D) a bridge plate forming a groove on the surface Above, metal deposition is performed in the groove to form a second electrode layer; and (E) the bridging plate is compounded, and the concave groove is bridged downwardly between the cantilever beam portion and the first base-- ^, So that the first electrode layer is positioned above the first electrode layer, and a first electrode layer is formed by the first and third electrodes to form a capacitor. According to the material punishment described in item 6 of the scope of the patent application, a method for manufacturing a broken-type humidity sensing device including a corpse 7 fan, wherein, in step (A), the first electrode layer is deposited. 'Firstly, a material which can change the lightning resistance and temperature resistance value with the temperature is deposited on the other end of the top surface of the substrate, and 屮 & A becomes an electrical resistance block, and two electrical connections are deposited 18 1221900 A conductive block connected to two opposite ends of the resistance block. 1919
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