TWI220521B - A structure for rewritable multi-level phase-change optical recording media - Google Patents

A structure for rewritable multi-level phase-change optical recording media Download PDF

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TWI220521B
TWI220521B TW91138182A TW91138182A TWI220521B TW I220521 B TWI220521 B TW I220521B TW 91138182 A TW91138182 A TW 91138182A TW 91138182 A TW91138182 A TW 91138182A TW I220521 B TWI220521 B TW I220521B
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recording medium
optical recording
layer
range
item
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TW91138182A
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TW200411655A (en
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Tun-Ying Fang
Mei-Rurng Tseng
Min-Jen Deng
Song-Yeu Tsai
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Ind Tech Res Inst
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Abstract

The invention provides a structure of multi-level reflection for rewritable phase-change optical recording medium. The characteristic is that the material of the recording layer of the structure is InxSbyTez, and the variable x is among 5.1 to 35.0(%), the variable y is among 57.5 to 71.7(%), and the variable z is among 7.5 to 23.2(%). This material has improvements which are high reflection ratio, discriminating partial recrystallization, high phase-change rate, and easily mark edge control, so it is suitable for multi-level reflection optical recording disk to increase data density, and the storage capacity of the recording medium.

Description

1220521 五、發明說明G) 【發明所屬之技術領域】 (Pha本發明係關於—種可覆寫相變也型光記錄媒體 ,且 Change Erasable Optical Recording Media) 特別係指具有多階反射率而能夠增加單位面積記錄密 又、相變化型光記錄媒體之結構。 【先前技術】 隨著多媒體的 求不斷提高,而目 由於符合高容量、 可寫擦的功能,預 場。 相變化光碟係 結晶相及非晶相結 非晶相的低反射率 率短脈衝雷射照射 非B曰相結構,而位 成碟片局部退火結 元反射率以讀取位 傳統相變化型 並不具備足夠之反 Level Record i ng : 錄技術以提高記鋒 發展中,其大致可 發展,對於記 前市場剛萌芽 向品質、低成 期未來必有其 採用雷射光照 構間轉換,並 以辨識0,1訊 ’使碟片局部 元擦拭則是以 晶,並以更低 元。 光碟的記錄層 射率對比以供 1技術之使用< 容量的多階反 分為: 錄媒體的容量及品質之要 的可覆寫相變化型光碟, 本及可攜帶等特性並具備 無可取代的應用領域及市 射碟片,使記錄層材料於 藉著結晶相的高反射率及 號。位元寫入係使用高功 熔化,並快速冷卻以形成 低功率雷射脈衝照射,造 功率雷射照射藉以偵測位 材料因反射率對比較小, 多階反射率碟片(Multi->目前利用新的編碼與記 射率碟片技術提案正蓬勃1220521 V. Description of the invention G) [Technical field to which the invention belongs] (Pha This invention is about a rewritable phase change type optical recording medium, and Change Erasable Optical Recording Media. Increase the structure of dense and phase-change optical recording media per unit area. [Previous technology] As the demand for multimedia continues to improve, the project is previewed due to its high capacity and rewritable functions. Phase-change optical discs have low reflectivity and short-pulse laser irradiating non-B phase structures in the crystalline phase and amorphous phase junction amorphous phase. Does not have enough anti-level recording technology to improve the development of Jifeng, which can be roughly developed. For the pre-record market to germinate to low-growth future, it must use laser light to convert between structures. Identification of 0,1 'makes the disc local element wipe is crystal, and lower the element. Comparison of the emissivity of the recording layer of the optical disc for the use of 1 technology < Multi-level inverse division of capacity: Rewritable phase-change optical disc with the capacity and quality of the recording medium, which has the characteristics of being portable and portable, and possessing impossibility Replaced fields of application and market discs make the recording layer material with high reflectance and number by crystalline phase. The bit writing system uses high power melting and rapid cooling to form a low-power laser pulse irradiation. The power laser irradiation is used to detect the bit material due to the small reflectance contrast. Multi-order reflectivity discs (Multi- > Proposals to use new encoding and record rate disc technology are booming

第6頁 1220521 五、發明說明(2) 一、 美國Calimetric公司所發展的Pit DepthPage 6 1220521 V. Description of the invention (2) I. Pit Depth developed by Calimetric, USA

Modulation (PDM); , 二、 University of Arizona 所發展的的Run-Length-Limited Modulation兩種技術。為對應於此種 Multi-Level Recording所採用之新記錄技術,記錄跡的 型式將不同於傳統s己錄跡只有兩階反射率,而至少需有= 階或三階以上的反射率來達到訊號的分級(Level)以提高 單位面積記錄密度。 至於如何形成多階反射率,目前的作法大致可分為兩 種: 一、 利用記錄跡大小效應,如TMMR (tangential mark-size modulation by recrystallization)技術係窝 入比雷射光點小且長度不同的記錄跡,以及MRWM (mark radial width modulation)係寫入固定長度但寬度不同的 記錄跡。在讀取時,雷射光點在固定時間内的反射率將因 記錄跡的大小差異而不同; 二、 利用可部份結晶(partial crystal i ine )材料 之特性,#由寫錄功率的控制使材料形成不同程度的結晶 以得到不同的瓦射率,目前市場上尚未有·可部份結晶材料 具體應用於可覆寫相變化型光碟上之實施例。 據此’本發明提出一種全新且具可部份結晶效應之記 錄層材料,以運用於未來採用MuHi-Level ^⑶^丨叫技 術之多階反射率光碟片。Modulation (PDM); 2. Run-Length-Limited Modulation technology developed by the University of Arizona. In order to correspond to the new recording technology used by this Multi-Level Recording, the type of recording track will be different from the traditional s-recorded track with only two orders of reflectance, and at least = order three or more orders of reflectance are required to reach the signal Level to increase the recording density per unit area. As for how to form a multi-order reflectance, the current practice can be roughly divided into two types: First, the use of recording mark size effects, such as TMMR (tangential mark-size modulation by recrystallization) technology, is to embed smaller and different length laser spots than laser light spots. Recording tracks, and MRWM (mark radial width modulation) are recording tracks of a fixed length but different widths. During reading, the reflectivity of the laser light spot within a fixed time will be different due to the difference in the size of the recording track; 2. Using the characteristics of partial crystal i ine materials, # controlled by the writing power The material forms different degrees of crystals to obtain different wattage efficiencies. At present, there are no embodiments in the market that can partially crystallize materials that are specifically applied to rewritable phase change optical discs. Based on this, the present invention proposes a new recording layer material with partial crystallization effect, which can be used in future multi-level reflectivity optical discs using MuHi-Level ^ ⑶ ^ 丨 technology.

1220521 五、發明說明(3) 【發明内容】 圖1係本發明之可覆寫相變化型,光記錄媒體的結構圖 。基板10 係厚度為0.6 mm 或 1.2mm 的Polycarbonate (PC) 、或 P V C、或 ρ Μ M A ( Ρ ο 1 y WLe t h y 1 M e t h a c r y 1 a t e )材料, 其執溝100之深度範圍為30〜60 (nm),而執溝log之寬 度範圍為0.25〜0.74 (_)。若基板10的厚度為〇6mm, 則須以網版印刷的方式塗上一層黏合勝,再將一空白 (Dummy)片與此片膠合,即成厚度為h 2 _的光碟片。隔 絕層1 2,用以有效隔開基板1 〇與記錄層1 4而防止寫錄動作 進行時對基板1 0的破壞,其可使用厚度範圍為7 〇〜丨2 〇 (nm )的A 1 203、AIN、ZnS(80%)-Si〇2(20%)等材料,其中 ZnS與Si02的成分比例為8 ·· 2。而本發明之記錄層14係使 用一種InxSbyTez材料,其中變數X之數值範圍為5 ^ ~ 35.0(81:%),變數7之數值範圍為5 7.5〜71.7(81:%), 變數2之數值範圍為7.5〜23.2(以%),其厚度範圍°為1’〇 ~ 3 0 ( nm )。保熱層1 6,用以儲存雷射波長在紅光波段( 1 = 6 5 0 nm或780 rim )照射時之雷射能量,並提供記錄層 1 4之材料由非晶態轉變為晶態時所需之能量,A 二 度範圍為10 〜20 (⑽)的A1 203、A1N、znS(8〇%)_Si〇2 予 (20%)等材料’其中ZnS與Si02的成分比例為8 : 2。反 18係採用厚度範圍為80 ~ 120 (⑽)的金、銀、 二 其他合金材料。 、瓦 本發明之可覆寫相變化型光 係將 In5 0Sb5 0 與Sb70Te30 兩個 記錄媒 合金乾 體钓最佳實施方式 材以共濺鍍的方式1220521 V. Description of the invention (3) [Summary of the invention] FIG. 1 is a structural diagram of an overwritable phase change type optical recording medium according to the present invention. The substrate 10 is made of Polycarbonate (PC), PVC, or ρ Μ MA (ρ 1 y WLe thy 1 M ethacry 1 ate) with a thickness of 0.6 mm or 1.2 mm, and the depth of the groove 100 is 30 to 60 ( nm), and the width of the ditch log ranges from 0.25 to 0.74 (_). If the thickness of the substrate 10 is 0.06 mm, a layer of glue must be applied by screen printing, and then a dummy sheet is glued with this sheet to form an optical disc with a thickness of h 2 _. The insulating layer 12 is used to effectively separate the substrate 10 and the recording layer 14 to prevent the substrate 10 from being damaged during the writing operation. A 1 having a thickness ranging from 70 to 200 (nm) can be used. 203, AIN, ZnS (80%)-SiO2 (20%) and other materials, wherein the composition ratio of ZnS to SiO2 is 8 ·· 2. The recording layer 14 of the present invention uses an InxSbyTez material, in which the value range of the variable X is 5 ^ ~ 35.0 (81:%), the value range of the variable 7 is 5 7.5 ~ 71.7 (81:%), and the value of the variable 2 The range is 7.5 to 23.2 (in%), and the thickness range is 1′0 to 30 (nm). The heat-retaining layer 16 is used to store the laser energy when the laser wavelength is irradiated in the red light band (1 = 650 nm or 780 rim), and the material of the recording layer 14 is changed from amorphous to crystalline The energy required at the time of A, the second degree range is 10 ~ 20 (⑽) A1 203, A1N, znS (80%) _ Si〇2 and (20%) and other materials' wherein the composition ratio of ZnS and Si02 is 8: 2. The Trans-18 series uses gold, silver, and other alloy materials with a thickness ranging from 80 to 120 (⑽). The rewritable phase change light of the present invention uses two recording media, In5 0Sb50 and Sb70Te30, as the best embodiment of alloy dry fishing. The material is co-sputtered.

1220521 五、發明說明(4) 製備’藉由改變施予在In50Sb50與Sb70Te30兩個合金乾材 上的DC或RF磁流錢鑛之功率大小,私改變鍍膜成分而製備 出所需之InxSbyTez合金成分。另外,隔絕層丨2、保熱層 16、反射層18亦可利用濺鍍機製作,其厚度可以濺鍍'’電^流 及濺鍍時間來控制。而本發明之可使用雷射n波長範圍為 600〜78 0 (nm),光學透鏡13之數值孔徑範圍為〇 55〜 0. 70 〇 為使熟悉该項技藝人士瞭解本發明之目的、特徵及功1220521 V. Description of the invention (4) Preparation 'By changing the power of DC or RF magnetic current money applied to the two alloy dry materials In50Sb50 and Sb70Te30, privately change the coating composition to prepare the required InxSbyTez alloy composition . In addition, the insulation layer 2, the heat preservation layer 16, and the reflection layer 18 can also be made by a sputtering machine, and the thickness thereof can be controlled by sputtering 'current and sputtering time. The usable laser n wavelength range of the present invention is 600 to 78 0 (nm), and the numerical aperture range of the optical lens 13 is 055 to 0.70. In order for those skilled in the art to understand the purpose, characteristics and Work

效’茲藉由下述具體實施例,並配合所附之圖式,對本發 明詳加說明如後: X 【實施方式】 茲揭露本發明之第一具體實施例如下··選擇基板丨〇為 pc材料’其厚度為12 _ ;隔絕層12aZnS(8〇%)-si〇2 (20%)材料,其厚度為9〇nm ;記錄層14為4 23·2 Sb 62 · 8Te。14材料,其厚度為20nm ;保熱層16為ZnS(80%)-Si02 (2材料’其厚度為1 5nm ;反射層1 8為銀材質,其厚度 為9 0nm。本發明利用濺鑛機製作隔絕層1 2、記錄層1 4、保 熱ί 1 6、反射層1 8,厚度則以濺鍍電流及濺鍍時間來控制 )、貝衣、成之多階反射率相變化型光碟片以紅光雷射(1 = 78 〇 nm ’則σ式機寫入單一長度之結晶態記錄跡並量測得到5階不同 之反射率,如圖2所示。 為pc從再揭露本發明之第二具體實施例如下:選擇基辑1 0 … 材料’其厚度為1·,2 mm ;隔絕層12為ZnS(80%)-Si02The effect of the present invention will be described in detail through the following specific embodiments in conjunction with the accompanying drawings: X [Embodiment] The first specific embodiment of the present invention will be disclosed as follows. The selection substrate is as follows: The pc material has a thickness of 12 mm; the insulating layer 12aZnS (80%)-si02 (20%) material has a thickness of 90 nm; and the recording layer 14 is 4 23 · 2 Sb 62 · 8Te. 14 materials with a thickness of 20nm; heat-retaining layer 16 with ZnS (80%)-Si02 (2 materials' with a thickness of 15nm; reflective layer 18 with a silver material and a thickness of 90nm. The invention uses a splatter Making insulation layer 1, 2, recording layer 1, 4, heat-retaining layer 1, 6, and reflective layer 1, 8; thickness is controlled by sputtering current and sputtering time), Beyer, and Chengzhi multi-level reflectance phase change optical discs Using a red laser (1 = 780 nm), a sigma-type machine writes a single-length crystalline record and measures 5 different reflectances, as shown in Fig. 2. The pc of the present invention will be disclosed again. The second specific embodiment is as follows: selecting the base series 1 0… the material 'its thickness is 1.2 mm; the insulating layer 12 is ZnS (80%)-Si02

1220521 五、發明說明(5) (20%)材料,其厚度為9〇nm ;記錄層14為丨^ 51別7i.7Te 23·=材料,其厚度為2〇nm ;详熱層丨』為ZnS(8〇%) — si〇2 (20%)材料,其厚度為15nm ;反射層18為銀材質,其厚度 為90㈣。本發明利用濺鍵機製作隔絕層12、記錄層“、保 熱2 1 6、反射層1 8,厚度則以濺鍍電流及濺鍍時間來控制 之多階反射率相變化型光碟片以紅光雷射(1 =780· 之巧玄寫入單長度之結晶態記錄跡並量測得到9階不同 之反射率,如圖3所示。 進一步歸納本發明之特點如後·· •本發明之記錄層材料,总士彳 差,且部分結晶效應明顯,同時且$ ::=有高度反 跡邊緣控制容易等優點,極適人運=目=速率快、記錄 之記錄層。 ισ運用在多階反射率光碟片 •本發明之可覆寫相變 反射率,且產業利用性高。因==結構具有多階 個人電腦、筆記型或===巧碟片可應用於家用 公司、企業之大型資料儲存 =儲存,亦可應用於 消費性電子產品。 另外亦適用於低成本要求之 雖然本發明已以一較奋 γ定本發明,任何熟如上’然其並非用 乾圍内’當可作各種之更動 不:離本發明之精 &圍當視後附之申請專利範圍;斤界:者::本發明之保 第10頁 1220521 圖式簡單說明 【圖式簡單說明】 圖1係本發明之可覆寫相變化型光記錄媒體的結構圖; 圖2係本發明之第一具體實施例的測試結果; 圖3係本發明之第二具體實施例的測試結果。1220521 V. Description of the invention (5) (20%) The material has a thickness of 90 nm; the recording layer 14 is a ^^ 51 7i.7Te 23 · = material whose thickness is 20 nm; the detailed thermal layer 丨 is ZnS (80%) — SiO2 (20%) material with a thickness of 15 nm; the reflective layer 18 is made of silver and has a thickness of 90 ㈣. In the present invention, a multi-level reflectance phase-change optical disc with a sputtering key and a sputtering time controlled by a sputtering key machine is used to produce an insulating layer 12, a recording layer, a thermal insulation layer 2 1 6 and a reflective layer 18. Light laser (1 = 780. Qiao Xuan writes a single-length crystalline record and measures 9 different reflectances, as shown in Figure 3. The characteristics of the present invention are further summarized as follows. • The present invention The material of the recording layer is poor, and part of the crystallization effect is obvious. At the same time, $ :: = has the advantages of high anti-tracking edge control and other advantages. It is very suitable for people = mesh = fast speed, recording layer for recording. Ισ is used in Multi-level reflectivity optical discs • The present invention can overwrite phase change reflectivity and has high industrial applicability. Because == structure has multi-level personal computers, notebooks or === smart discs can be applied to home companies, enterprises Large-scale data storage = storage, can also be applied to consumer electronics products. In addition, it is also applicable to low-cost requirements. Although the present invention has been formulated with a relatively high degree of gamma, any familiarity as above, but it is not used within the fence. Make various changes: away from the essence of the invention & a mp; the scope of patent application attached to Dangdangshi; Jin Jie ::: Guarantee of the present invention, page 10, 1220521, simple illustration [Schematic illustration] Figure 1 is an overwriteable phase-change optical record of the present invention FIG. 2 is a structural diagram of a media; FIG. 2 is a test result of a first specific embodiment of the present invention; FIG. 3 is a test result of a second specific embodiment of the present invention.

圖號說明 ·· 10 基板 100 執溝 11 雷射 12 隔絕層 13 光學透鏡 14 記錄層 16 保熱層 18 反射層Description of the drawing number ·· 10 substrate 100 ditch 11 laser 12 insulation layer 13 optical lens 14 recording layer 16 thermal insulation layer 18 reflective layer

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Claims (1)

f寫相變化型光記錄媒體結 一種具有多階反射率的可 構,其至少係由一基板、 熱層及一反射層所組成, 鏡所產生的雷射光束照,射 之光記錄媒體,其特徵在 一隔絕層、一記錄層、一保 且係利用雷射穿過一光學透 忒5己綠層以記錄或讀取資訊 於: ' 孩§己録層係I η X S b y 丁 為5.1〜35,0(at%),而料去二 旧 71 7, , 0/Λ .;而變數y之數值範圍為57. 5〜 7l.7(at /〇,而變數z之數值蘇 。 要又值乾圍為7· 5〜23. 2(at %) i如申請專利範圍第1項所述之具有多階反射率的可覆 寫相變化型光記錄媒體結構,其中該基板係代 (Polycarbonate)、或pVC 、或PMMA (p〇ly Methyl Methacrylate)材料,其厚度為〇 6_或12_,且其 軌溝之深度範圍為3 〇〜6 0 ( n m ),而該執溝之寬度 摩色圍為〇· 25〜0·74 (ππη)。 3 ·如申請專利範圍第1項所述之具有多階反射率的可覆 寫相變化型光記錄媒體結構,其中該隔絕層係A1 203 、或A1N、或成分比例為8 ·2的ZnS-Si02材料,其厚 度範圍為70〜120 (nm )。 4 ·如申請專利範圍第1項所述之具有多階反射率的可覆 寫相變化型光記錄媒體、结構’其中該記錄層之厚度範 園為10〜30 (nm)。 5·叫申請專利範圍第丄項所述之具有多階反射率的可覆 寫相變化型光記錄媒體結構,其中該保熱層係A 1 203f write phase change type optical recording medium with a structure with multi-order reflectivity, which is composed of at least a substrate, a thermal layer and a reflective layer, the laser beam generated by the mirror, the light recording medium, It is characterized by an insulation layer, a recording layer, a security system, and the use of laser light to pass through an optically transparent 5H green layer to record or read information in: § 录 recorded layer system I η XS by Ding 5.1 ~ 35,0 (at%), and expected the two old 71 7,, 0 / Λ. And the value range of the variable y is 57.5 ~ 7l.7 (at / 〇, and the value of the variable z is Su. To It also has a dry circumference of 7.5 to 23.2 (at%). The structure of a rewritable phase change optical recording medium having multi-order reflectance as described in item 1 of the scope of patent application, wherein the substrate is a Polycarbonate), or pVC, or PMMA (polly Methyl Methacrylate) material, the thickness of which is 〇6_ or 12_, and the depth of its rail groove ranges from 30 to 60 (nm). The color range is 0.25 to 0. 74 (ππη). 3 · The structure of an overwritable phase change type optical recording medium with multi-order reflectance as described in item 1 of the scope of patent application Wherein, the insulation layer is A1 203 or A1N or ZnS-Si02 material with a composition ratio of 8 · 2, and its thickness ranges from 70 to 120 (nm). 4 · As described in item 1 of the patent application -Order reflectivity overwritable phase-change optical recording medium and structure 'where the thickness of the recording layer is in the range of 10 to 30 (nm). Structure of rewritable phase change optical recording medium, wherein the heat retaining layer is A 1 203 第12 ! 2的ZnS-Si〇2材料,其厚 祀' 述之具有多階反射率的可覆 $,其中該反射層係金、或 合金材料,其厚度範圍係⑽ 述之具有多階反射率的可覆 構’其中該雷射之波長範圍 述之具有多階反射率的可覆 構,其中該光學透鏡之數值 〇 述之具有多階反射率的可覆 構,其中該I η X S b y T e z材料 5 0Sb50材料及Sb70Te30材料 6 7 9 izzuyzi 六、申請專利範圍 、或A1N、或成分比例為杉 度範圍係10〜20 (nm ) 如申請專利範圍第1項所 寫相變化型光記錄媒體結 銀、或銅、或鋁、或其他 〜120 ( nm )。 如申睛專利範圍第1項所 寫相變化型光記錄媒體結 為_ 〜780 (nm)。 如申睛專利範圍第1項所 寫相變化型光記錄媒體結 孔徑範圍為0. 55〜〇_ 7〇 , 如申睛專利範圍第1項所 寫巧k化型光記錄媒體結 係藉由共濺鍍的方式對I η 進行製備所產生。The 12th 2nd ZnS-Si02 material has a thick coating, which can be covered with multi-order reflectance, wherein the reflective layer is gold, or an alloy material, and the thickness range is described with multi-order reflection. The coverage of the laser's wavelength can be described as a multilayer with a multi-order reflectivity, and the numerical value of the optical lens is described as the multilayer with a multi-order reflectivity, where the I η XS by Tez material 5 0Sb50 material and Sb70Te30 material 6 7 9 izzuyzi 6. Patent application scope, or A1N, or composition ratio is 10 ~ 20 (nm) in the degree range, as described in item 1 of the patent application scope The medium is silver, or copper, or aluminum, or other ~ 120 (nm). The phase-change type optical recording medium written in the first patent scope of Shenyan has a structure of _ ~ 780 (nm). The phase aperture type optical recording medium as described in item 1 of Shenjing's patent range has an aperture range of 0.55 ~ 〇_70, and the K-type optical recording medium as described in item 1 of Shenjing's patent range is bound by Co-sputtering results from the preparation of I η. 第13頁Page 13
TW91138182A 2002-12-31 2002-12-31 A structure for rewritable multi-level phase-change optical recording media TWI220521B (en)

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