TWD219684S - Portion of light-emitting diode - Google Patents
Portion of light-emitting diode Download PDFInfo
- Publication number
- TWD219684S TWD219684S TW110303585F TW110303585F TWD219684S TW D219684 S TWD219684 S TW D219684S TW 110303585 F TW110303585 F TW 110303585F TW 110303585 F TW110303585 F TW 110303585F TW D219684 S TWD219684 S TW D219684S
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- design
- emitting diode
- unique
- dotted line
- Prior art date
Links
- 230000000007 visual effect Effects 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 abstract 1
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Abstract
【物品用途】;本創作係關於一種發光二極體之部分之外觀式樣設計。;【設計說明】;本設計係一種新穎造型之發光二極體之部分,即發光二極體的金屬電極及部分結構外形輪廓所構成的特有紋路,可使本設計具有簡潔且協調之視覺意象,進而使本設計之整體產生獨特之視覺效果。;圖式所揭露之虛線部分,為本案不主張設計之部分。【Use of article】;This creation is about the appearance design of a part of a light-emitting diode. ;[Design Description];This design is part of a novel shape of a light-emitting diode, that is, the unique pattern formed by the metal electrodes of the light-emitting diode and the outline of the partial structure, which can make this design have a simple and coordinated visual image. , thus making the entire design produce a unique visual effect. ; The dotted line portion disclosed in the diagram is the portion of the case that is not intended to be designed.
Description
本創作係關於一種發光二極體之部分之外觀式樣設計。 This work is about the appearance design of a part of a light-emitting diode.
本設計係一種新穎造型之發光二極體之部分,即發光二極體的金屬電極及部分結構外形輪廓所構成的特有紋路,可使本設計具有簡潔且協調之視覺意象,進而使本設計之整體產生獨特之視覺效果。 This design is a part of a novel light-emitting diode, that is, the unique pattern formed by the metal electrode of the light-emitting diode and part of the structural outline, which can make the design have a simple and harmonious visual image, and further make the design of the design. The whole produces a unique visual effect.
圖式所揭露之虛線部分,為本案不主張設計之部分。 The dotted line part disclosed in the drawings is the part that does not claim design in this case.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110303585F TWD219684S (en) | 2021-07-09 | 2021-07-09 | Portion of light-emitting diode |
US29/822,281 USD1008198S1 (en) | 2021-07-09 | 2022-01-07 | Light-emitting diode device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110303585F TWD219684S (en) | 2021-07-09 | 2021-07-09 | Portion of light-emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
TWD219684S true TWD219684S (en) | 2022-07-01 |
Family
ID=88922103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110303585F TWD219684S (en) | 2021-07-09 | 2021-07-09 | Portion of light-emitting diode |
Country Status (2)
Country | Link |
---|---|
US (1) | USD1008198S1 (en) |
TW (1) | TWD219684S (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWD190371S (en) | 2017-03-20 | 2018-05-11 | 晶元光電股份有限公司 | Portion of light-emitting diode |
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KR100833309B1 (en) * | 2006-04-04 | 2008-05-28 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
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TWI376817B (en) * | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
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KR100930195B1 (en) * | 2007-12-20 | 2009-12-07 | 삼성전기주식회사 | Nitride Semiconductor Light Emitting Diode with Electrode Pattern |
KR101625125B1 (en) * | 2009-12-29 | 2016-05-27 | 서울바이오시스 주식회사 | Light emitting diode having electrode extensions |
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KR20120032305A (en) * | 2010-09-28 | 2012-04-05 | 삼성엘이디 주식회사 | Semiconductor light emitting diode chip, method of fabricating the chip and method for quality control of the chip |
USD648287S1 (en) * | 2011-03-30 | 2011-11-08 | Epistar Corporation | Light-emitting diode |
USD676001S1 (en) * | 2011-04-07 | 2013-02-12 | Epistar Corporation | Light emitting diode |
CN103797592A (en) * | 2011-08-17 | 2014-05-14 | 三星电子株式会社 | Semiconductor light emitting device |
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TWI544658B (en) * | 2012-08-01 | 2016-08-01 | 晶元光電股份有限公司 | Light emitting diode structure |
KR102027301B1 (en) * | 2012-12-14 | 2019-10-01 | 서울바이오시스 주식회사 | Enhancement in the light extraction efficiencies of Light Emitting Diode by adoption of reflection layer |
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JP6024506B2 (en) * | 2013-02-18 | 2016-11-16 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device and method for manufacturing the same |
USD707641S1 (en) * | 2013-08-01 | 2014-06-24 | Epistar Corporation | Light-emitting diode |
JP6485019B2 (en) * | 2013-12-19 | 2019-03-20 | 日亜化学工業株式会社 | Semiconductor light emitting device |
TWD169527S (en) * | 2014-08-20 | 2015-08-01 | 晶元光電股份有限公司 | Portions of light-emitting diode unit |
TWD178892S (en) * | 2015-11-17 | 2016-10-11 | 晶元光電股份有限公司 | Portion of light-emitting diode array |
US10199542B2 (en) * | 2015-12-22 | 2019-02-05 | Epistar Corporation | Light-emitting device |
DE102016112587A1 (en) * | 2016-07-08 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
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TWD190563S (en) * | 2017-06-23 | 2018-05-21 | 晶元光電股份有限公司 | Portion of light-emitting diode array |
USD894850S1 (en) * | 2018-12-12 | 2020-09-01 | Epistar Corporation | Light-emitting device |
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2021
- 2021-07-09 TW TW110303585F patent/TWD219684S/en unknown
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2022
- 2022-01-07 US US29/822,281 patent/USD1008198S1/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWD190371S (en) | 2017-03-20 | 2018-05-11 | 晶元光電股份有限公司 | Portion of light-emitting diode |
Also Published As
Publication number | Publication date |
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USD1008198S1 (en) | 2023-12-19 |
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