TW594862B - Method for crystallizing semiconductor thin film - Google Patents

Abstract

A method for crystallizing semiconductor thin film comprises: a step of forming a semiconductor thin film (14) on a substrate; a step of forming a strip portion (16) for hindering the crystallization direction of the semiconductor thin film in or on the semiconductor thin film; and a step of crystallizing the semiconductor thin film by scanning an energy beam of continuous wave onto the direction crossing the direction of the portion for hindering the crystallization direction of the semiconductor thin film. As the scanning energy beam and the portion for hindering the crystallization direction of the semiconductor thin film are crossed, when the area irradiated by the energy beam and the portion for hindering the crystallization direction of the semiconductor thin film are crossed, the crystal growth is hindered from continuing. Therefore, even if the crystallizing semiconductor thin film has not yet formed the complete island-like pattern, the semiconductor thin film with high yield and good crystal is formed, while film peeling is prevented.

Description

Description of the invention: [Technical field to which the invention belongs] TECHNICAL FIELD The present invention relates to a method for crystallization of a semiconductor thin film, and in particular, 5 relates to a semiconductor film that can form a highly crystalline semiconductor film with a high yield without forming an island pattern Method for crystallization of semiconductor thin films. 2. Description of the Related Art Recently, a technique has been proposed that can form a polycrystalline stone film at a relatively low temperature. 10 When using this technique, a multi-spar Xi film can be formed on a glass substrate of low heat resistance. Then, a thin film transistor (TFT) using a polycrystalline silicon film as an active semiconductor film can be formed on a glass substrate. A thin film transistor using a polycrystalline silicon film can be used as a pixel switching element for an active matrix liquid crystal display (LCD). 15 Because the thin film transistor using a polycrystalline silicon film as the operating semiconductor film has a higher carrier moving speed than the thin film transistor using an amorphous silicon film as the operating semiconductor film, high-speed operation can be achieved. Therefore, the polysilicon film is a thin film transistor used not only as a pixel switching element can also be used as the switching elements of the peripheral circuit. Thus, when using a technique of forming a multi-spar may eve 2〇 film at a relatively low temperature, it is not significant for the further understood · and the peripheral circuit portion are formed on the same panel systematic / substrate made of the (system on panel). And, using a multi-spar Tokyo film as a thin film transistor of the operation of the semiconductor film can be applied not only to a liquid crystal display, which is also expected to be applied to an organic electroluminescent light (EL) display. Technical polysilicon film 5 may be formed on the glass substrate at a relatively low temperature of, for example, 'was made of the following techniques. First, an amorphous stone film is formed on a glass substrate. Next, the amorphous silicon film is irradiated with a pulsed laser beam. Laser beams can use excimer lasers. When a pulsed laser beam is irradiated, during the curing process of the silicon melted by the laser beam, the crystal of silicon will grow and form a polycrystalline silicon film. However, in the polycrystalline silicon film formed by the method described above, the particle size of the silicon crystal is not necessarily sufficiently large. Therefore, a high carrier mobility cannot be obtained sufficiently. Furthermore, among the techniques for obtaining high carrier mobility, the following techniques have been proposed. First, an amorphous silicon film is formed on a glass substrate. Secondly, the glass substrate is placed on a translator. Subsequently, while in the amorphous silicon film is irradiated with the continuous wave laser beam, while by X-Y translation stage that the glass substrate is moved to scan the laser beam. Laser beam excitation of the semiconductor laser beam can be used. When the laser beam is scanned, the amorphous silicon film in the area irradiated by the laser beam will melt, and the silicon will solidify in the part separated from the area irradiated by the laser beam. The crystalline silicon formed in continuation along the laser beam scanning direction, and an elongated crystal growth along the laser beam scanning direction. Further, this aspect of crystal growth, called lateral growth. When so used the crystallized silicon thin film as the operation of the semiconductor film, and the silicon crystal so that the long and consistent moving direction vector, can constitute a carrier mobility of the thin film transistor 594 862 Board of electrodes. This is so because when the silicon crystal along the length of the carrier when the mobile, the mobile carrier is not hindered so that the grain boundaries. However, 'this technique, proposed, the amorphous silicon film is crystallized if connecting complete shape of integrally formed, the film peeling. FIG 5 FIG 23 is a display film peeling. As shown in FIG. 23, a portion of the crystallized silicon thin film 100 with a film 102 peeled generated. The crystallization of the film peeling film 102, although is not easily generated near the start location of the scanning laser beam, but as the distance from the start of laser beam scanning location, it is easy to produce. 1〇2 film peeling due to the laser beam as the scanning will continue and, it will expand and form a broad range of release. Thus, when producing the green sheet 10 peeled 1〇2 when the silicon thin film can not be used 1〇〇 article. Causes film peeling 1〇2 generated though not necessarily clear, it is generally believed that the system contains impurities in the film and the surface tension of the molten silicon and the like caused. Among the techniques for preventing film peeling 102, a technique has been proposed in which an amorphous silicon film is formed into an island pattern in advance, and 15 beams of laser light are scanned on the amorphous silicon film formed with the island pattern (see Patent Documents 1 and 2). FIG. 24A, when the display with the column size of Example 70 // m 6〇χ 104a of rectangular island pattern. And, arranging the display of FIG. 24B size 50 / zmx Example 104b when the island pattern of 200. I〇4b island pattern, the abundance of circular end ^ Also, the shape and size of the island-shaped pattern is not limited thereto, but may be appropriately set based set 20. If the previously formed amorphous silicon film island pattern, since the laser beam 104a, 104b from the scanning of a short in an island pattern, it is not easy to generate film peeling. In addition, even if one of the island-like patterns 104a and 104b is peeled off, the island-like patterns 104a, 104b and the other island-like patterns 104a, 104b are separated from each other due to the film peeling. Yes, the separation will not continue to other island patterns 104a, 104b. Accordingly, if an amorphous pattern is formed into an island pattern in advance, the yield can be improved. 'However, when forming a non-crystalline film spar Tokyo island pattern of island-like pattern 104, the edge portion 106 does not grow as well crystallized. Thus, for operation as a part of the thin film transistor of the semiconductor film is limited to a central portion of an island pattern 1〇4 108 (refer to FIG. 25A). Therefore, as shown in Fig. 25B, the island pattern 10 is further formed into a pattern ', and only the central portion of the island pattern _4 is used to remove the semiconductor film 11 () which is a thin film transistor. Then, a gate electrode (not shown) is formed on the operation semiconductor film 110, and a thin film transistor 114 is formed by using the shape electrode 112. In this way, the semiconductor film no that can be used as the operation of the thin film transistor 114 is only a part of the island pattern. Therefore, it is impossible to form the thin film capacitor 114 in a high density by forming the amorphous silicon into an island pattern in advance. Therefore, it is expected to have a technology that can form a semiconductor with good crystallinity with a high yield without having to preliminarily form an amorphous film to form an island pattern. Patent Literature 1 Japanese Patent Laid-Open Publication No. 2003-86505 Patent Literature 2 Japanese Patent Laid-Open Publication No. 2000-865009 Non-Patent Literature 1 Nobuo Sasaki, Haraaki, Takenai Takeshi, Guan Shengxing, Takei Mitsuko 594862, Kenichi Yoshino, and Chida Man "New low-temperature polycrystalline silicon TFT technology with CW lateral crystallization (CLC) technology mobility of more than 500cm2 / Vs" Electronic Information and Communication Society Papers C, Vol. J85-C, No. 8 , ρρ · 601_608 (2002) · Non-Patent Document 2 5 A. Hara, F. Takeuchi, and N. Sasaki, ,, Selective

Single-Crystalline-silicon Growth at the Pre-defined Active Regions of TFTs on a Glass by a Scanning CW Laser Irradiation, IEEE IEDM 2000 Tech. Digest, ρρ · 209-212 (2000). 10 Non-Patent Document 3 A. Hara, Y. Mishima, T. kakehi, F. Takeuchi, M. Takei, K. Yoshino, K. Suga5 M. Chida, and N. Sasaki, vv High performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization , IEEE IEDM 2001 Tech. 15 Digest, pp.747-750 (2001).

Non-Patent Document 4 Y. Sano, M. Takei, A. Hara, and N. Sasaki, vv High-performance Single-Crystalline-silicon TFTs on a Non-Alkali Glass Substrate, 〃 IEEE IEDM 2002 Tech. Digest, 20 pp. 565-568 (2002). Non-Patent Document 5 Κ · Yoshino, M. Takei, M. Chida, A. Hara, and N. Sasaki, vv Effect on Poly-Si Film Uniformity and TFT Performance of Overlap Irradiation by a Stable Scanning CW Laser, 〃Proc. 9 9th Int · Display Worlshops, 02 (Hiroshima, Dec · 4-6, 2002), pp.343-346 (2002). That is the purpose of the present invention is formed Langevin has to provide a high yield Crystallization method of semiconductor film with good crystallinity without having to form island patterns in advance. [Summary of the Invention] The foregoing object of the invention is achieved by a crystallization method of a semiconductor thin film, including: a step of forming a semiconductor thin film on a substrate; and forming a strip shape on the semiconductor thin film or the semiconductor thin film to hinder the And a step of crystallizing the semiconductor thin film by scanning a continuous wave energy beam in a direction intersecting with the longitudinal direction of the portion for blocking the crystal growth of the semiconductor film. Under this invention, since the scanning energy beam, it serves to impede the length of the crystal. ⑽ and so the irradiation region and the amount of gastric% of the beam to impede the crystal growth. When the crystal growth may hinder the continuation and fork. Since crystal growth if L, ', to shorten the length of a shell of a certain extent, film peeling tends to less likely to occur, it can be - while preventing from generation _, - edge forming a semiconductor thin film having good crystalline quality. In addition, even if the film _ has been generated, when the area irradiated by the energy beam intersects with the part that inhibits the crystal growth, it can still prevent the film peeling from continuing. Therefore, according to the present invention, even when crystallized semiconductor thin m without forming an island pattern can be crystallized, a semiconductor with good crystallinity can be formed with high yield while preventing film peeling. Under this inventions may as a semiconductor thin film having excellent crystallinity is formed a complete shape, the high-density 594 862 to form a good electrical characteristics of the thin film transistor. Brief Description of the drawings FIG 1A~F system of the present invention show! Sectional view of a semiconductor crystallization method of the embodiment and a plan view of the film morphology. 5 shows a plan view silk 2® crystallization method based semiconductor thin film according to the first embodiment of the present invention. Fig. 3 is a schematic view showing a crystallization apparatus. FIG 4A~B based on a plan view showing the shape of the spot of the laser beam, and FIG silicon in the crystalline state by scanning the laser beam obtained by the display. 10 FIG. 5 is a plan view showing a method for crystallizing a semiconductor thin film according to a modification (1) of the first embodiment of the present invention. 6 a plan view of the crystallization method based semiconductor thin film of a first embodiment of the present invention Shu modification of morphology (bis) of the display. 7 a plan view of a crystallization method based semiconductor thin film 15 of the modification example (third) embodiment of the first aspect of the present invention Shu display. Fig. 8 is a plan view showing a method for crystallizing a semiconductor thin film according to a modification (fourth) of the first embodiment of the present invention. Figure 9 based crystallization method of a plan view of a modified example (part five) of the first embodiment of the present invention, the semiconductor thin film display. 2q ^ Figures 10A to 10C are step diagrams (part 1) showing a crystallization method of a semiconductor thin film according to a second embodiment of the present invention. Figures 11A to F are step diagrams (No. 2) showing a crystallization method of a semiconductor thin film according to a second embodiment of the present invention. Fig. 12 is a plan view showing a method for crystallization of a semiconductor thin film 11 594862 according to a second embodiment of the present invention. FIG displaying step based on 13A~C figure (1) a method of crystallizing a semiconductor thin film according to the third embodiment of the present invention. FIG displaying step based on FIG 14A~F (bis) crystallization method according to the third embodiment of the present invention, the semiconductor thin film 5. Figure 15 A plan view crystallization method based semiconductor thin film according to the third embodiment of the present invention. FIG displaying step based on 16A~F FIG method of crystallizing a semiconductor thin film according to the fourth embodiment of the present invention. FIG 17 1〇 silk-based cosmetic method of a plan view of a semiconductor thin film junction day fourth embodiment of the present invention. FIG displaying step based on 18A~F FIG method of crystallizing a semiconductor thin film according to the fifth embodiment of the present invention. Fig. 19 is a plan view showing a method for crystallization of a semiconductor thin film according to a fifth embodiment of the present invention. Figures 20A to 20C are step diagrams (part 1) showing a crystallization method of a semiconductor thin film according to a sixth embodiment of the present invention. The first step of FIG. 21A F line in FIG significant crystallization method of a semiconductor thin film of the sixth embodiment of the present invention is not (2). FIG 22 square-based display of the present invention said Couture & Day method of a plan view of a semiconductor thin film Yuan end date of the month brother 6 solid form. Fig. 23 is a diagram showing film peeling. The first wide A~B FIG plan view display system with islands pattern. Based on the display when the 25A~C FIG crystallization step of forming an island pattern view of a thin film crystal 12594862 thereof. I: The method of Embodiment 3 of the crystalline semiconductor thin film according to the first embodiment of the present invention Best Mode for invention (first embodiment) FIG. 5 using the first to fourth instructions FIG. Fig. 1 is a cross-sectional view and a plan view showing a method for crystallizing a semiconductor thin film according to this embodiment. FIG. 1A, FIG. 1C, FIG. 1E based on a cross-sectional view and FIG. ⑺ first, FIG. 10, a plan view of the system of FIG 1F. Figure 1A along line 1B of FIG A_ of a > cross-sectional view taken along a line. FIG. 1C 1D-based cross-sectional view of FIG 1〇 the A-A 'taken along a line. The first line in FIG. 1E 1F A map of the first - A > cross-sectional view taken along a line. Fig. 2 is a plan view showing a method for crystallizing a semiconductor film according to this embodiment. First, 'as shown in Figure 1A and FIG. 1B, for example, by plasma CVD (chemical vapor deposition strengthening electrical plasma) method, on a glass substrate 1〇 fully formed as a silicon oxide film 15 as a buffer layer 12. The film thickness of the silicon oxide film 12 is, for example, 400 nm. Next, by a plasma CVD method, for example, amorphous silicon film 14 is formed fully. Non-spar 14 so that the film thickness of Tokyo, for example, 5〇~2〇〇nm. Subsequently, to the dehydrogenation, a heat treatment for 2 hours, for example of 450 ° C. H 2〇 lithography using imaging techniques, frequency 14 is formed on the amorphous most slit 16. 16 so that the slit width w, for example, 5㈣. So that the pitch of the slit ρχ, for example, 200 / z m. As shown in FIG. 2, the slit lines sequentially formed i6, serve reach the other side end portion by the one side end portion 14 of the amorphous silicon film. Subsequently, by scanning the laser beam 18, 14 of the non-crystalline film spar Xi. 13 594 862 In this case, by the third crystallization apparatus described in FIG. 14 so that when the amorphous silicon film is crystallized used. Fig. 3 is a schematic view showing a crystallization apparatus. As shown in FIG. 3, the crystallization apparatus comprising: a laser light source unit 2〇, based for emitting the laser beam by 18; concave lens 22, lines 5 to 20 of the light emitted by the laser light source 18 of the laser beam shape forming by; mirror 24, lines 18 to the concave reflector 22 formed by the laser beam by a predetermined direction; a cylindrical lens 26, the laser system to learn from the reflection of the beam 24, 18 of the molded shape; cylindrical lens 28 'perpendicular to the line disposed with the length of the cylindrical lens 26, and 26 for forming of the laser beam by a cylindrical lens 18 by the shape of the further shaping; 10 a convex lens 30, the shaping line for the mine by a cylindrical lens 26 further the shape formed by the light beam 18; and, XY translation stage 32, to move the system to the glass substrate 10 by χγ direction. Laser light source 20 may be used, for example, to a solid laser LD (laser diode) excitation vibration is continuous wave (CW) excitation of the light source of semiconductor. These 15 may be used, for example, a solid laser wavelength of 532nm Nd: YV04 laser. Let the output power of the solid laser be, for example, 6W. Another reason why a semiconductor excitation solid laser, the excitation of the system since the semiconductor laser and solid laser gas compared to 'obtain a more stable so that the laser beam of 18. When the light 20 as the optical system of the laser light source unit 20 emits a laser light beam 18 is passed through, the shape of the laser beam 18 points, i.e., the shape of the irradiation region 18a as in FIG. 3 and 4 shown in FIG. , become oval. Figure 4A based mine plan view of the beam spot shape of the exit of the display. As shown in Fig. 4A, the shape of the point 18a of the laser beam 18 is an elongated shape. More specifically, the shape of the laser beam spot 18a of line 18 of a length of the major axis La 14 594 862, for example, from about 400 # m, the minor axis Lb |, for example, of approximately circular expansion Zheng m. The central portion of the laser beam 18 is a strong portion. The intensity of the laser beam intensity of the portion 18, for example, wound about a long i5〇 # m of the length Lc. On the other hand, the strength of {part other than the central portion 18 of the light beam is not too strong lightning portion 5 parts. This crystallization apparatus used, and as for the following to 14 scanning laser beam 18 on the amorphous silicon film. First, the glass substrate 10 is placed on a translation stage 32 χ_γ. At this time, the glass substrate 10 is placed so that the long direction of the slit 16 is parallel to the long direction of the irradiation region 10a of the laser beam 18. Then, while the laser beam 14 irradiated amorphous silicon film 18, while the XY translation stage 32 moves the glass substrate 1〇, whereby with respect to a direction perpendicular to the long slot 16, namely the X direction, the scanning laser beam 18a 18 of the irradiation region. So that the laser beam 18, for example, known speed described 5〇cm / sec. 15 through FIG. 1C as shown in Figure 1F, when the scanning laser beam 18, the laser beam 18 in the irradiation region 18a, η amorphous silicon film melts, and the laser beam irradiated from the region 18a of 18 most, stone evening will be cured. Crystals of silicon continue to form along the scanning direction of the laser beam 18, and elongated crystal grains grow along the scanning direction of the laser beam 18. 20 When the irradiated area 18a of the laser beam 18 intersects the gap 16, the crystal growth of silicon will not continue. If the length of the crystal growth continues, is set to reduce the extent of a 'film peeling tends to less likely to occur. Therefore, even in the case of crystallizing an intact amorphous stone film in which an island-like pattern is not formed in advance according to this embodiment mode, the film can be well crystallized while preventing the film from peeling. 15594862 Figure 4B a view showing a state of silicon crystal obtained by the scanning of the laser beam. As shown 'in the central portion of laser beam 18 is scanned across the region 34a' in FIG. 4B, the scanning direction of the laser beam 18, i.e. the direction χ, silicon crystal 5 grown into an elongated shape. This kind of crystal growth is called lateral growth. In addition, in the central portion 3 in the area scanned by the laser beam 18, a good crystal system can be obtained because the laser beam intensity is strong. On the other hand, in the area scanned by the laser beam 18, in the portion 34b other than the central portion, there is a silicon crystal with a crystal grain size which is not too large. In addition, in the area scanned by the laser beam I8, the portion 34b other than the central portion has a small crystal grain size because the laser beam intensity is weak. Since the area where the crystals are well crystallized has only the central part of the area scanned by the laser beam 18, if the laser beam 18 is scanned only once, the entire amorphous silicon film 14 cannot be crystallized. Therefore, as shown in FIG. 2, the entire amorphous stone film 14 is crystallized by performing a scan Sn of the laser beam 18 15 times. When the scanning sn of the laser beam 18 is performed several times, the laser beam U is scanned, and the rules of the irradiation area i8a of the laser beam 18 partially overlap. The reason for partially overlapping the rules of the irradiation area 18a of the laser beam 18 is as follows. 20 That is, when the doctrines of the irradiation areas 18a of the laser beam 18 are not partially overlapped, and the laser beam 18 is scanned only a plurality of times, only in the center of the area scanned by the laser beam 18 The part 34a (refer to FIG. 4) can obtain good crystals, and among the regions scanned by the laser beam 18, the regions 34b other than the central part cannot obtain the stone crystalline with a large particle size. 16594862 Accordingly, the present embodiment, the system 18 so that laser beam irradiation region 18a of the execution of the road partially overlap, for the laser beam 18 scans. Thereby, the entire amorphous silicon film 14 can be satisfactorily crystallized. As aforesaid, under this embodiment, since the 18, 5 and the slit 16 serve cross-scan the laser beam, so that when the laser beam 18 is irradiated region 18a and the cross slot 16, may hinder crystal growth continues. Because if the length of the crystal growth continues, is set to reduce to some extent, the film does not tend to peel. Easy to produce, it can be produced while preventing film peeling, while forming a semiconductor thin film having good crystalline quality. In addition, even if the film peeling has occurred, when the irradiation region 10a of the laser beam 18 intersects with the slit 16, the film peeling can be prevented from continuing. Therefore, according to this embodiment, even when a complete amorphous silicon film having no island pattern is crystallized, a semiconductor thin film having good crystallinity can be formed with high yield while preventing the film from peeling. Under this embodiment, because the semiconductor thin film having good crystallinity to be a complete shape is formed, it is possible to form a good high 15 density electrical characteristics of the thin film transistor. (Modification Example (one)) Next, a fifth modified example of FIG crystallization method of the present embodiment aspect of a semiconductor thin film (one). Fig. 5 is a plan view showing a crystallization method of a semiconductor thin film according to this modification. The main feature of the crystallization process of the modification example 20 of the semiconductor thin film is to: form a staggered long as a majority of the short length of the slit Shu. As shown in FIG. 5, a large number of short slits 16 a having a plurality of long lengths are formed in the amorphous silicon film 14. The plurality of slits 16 a form a state in which the long directions are parallel to each other. The length Ls of the slits 16 a is, for example, 2 °. square // m. the width w of the slit 17 ', the said plots', for example, m. shirt slit lines shifted in direction χ formed shifted slit 16a of the X-direction interval ~. slits 16a is formed, for example, based pawl · overlap in the Y direction overlap distance of the DY in the Y direction, for example, the slit ⑹ 20 // m. by arranging the majority of the long gap to him, may constitute the whole of the slot 5 is intermittent. when such amorphous silicon when the laser beam scanning film 14 of the heart 18, the irradiation area of the laser beam 18 and 18a will intersect one of the slot 16a. Thus ', by modification of the present embodiment' 18 may irradiate the laser beam 18a and the slot 16a in region when they cross and hinder crystal growth continues. square so 'by modification of the present embodiment, a high yield can be formed with good crystallinity of the semiconductor thin film of amorphous silicon film is formed without having an island pattern. (modification Example (bis)) followed by 'of FIG. 6 using the described embodiment of this aspect of the semiconductor thin Modification (No. 2) of the crystallization method of the film. Fig. 6 is a plan view showing the crystallization method of the semiconductor 15 thin film of this modification. The main feature of the crystallization method of the semiconductor thin film of this modification is that: long laser beam 18 is irradiated to the area 18a of the short length of the slit 16b of the square as shown in Fig. 6, in the amorphous silicon film 14 is formed with a slit 16b of the slit 16b majority. 20 is aligned with the majority of the length. by arranging the majority The slit 16b ′ in the long direction may constitute an intermittent slit as a whole. The length Ls of the slit 16b in the longitudinal direction is, for example, 100 / zm. In the irradiation area 18a of the laser beam 18, the longitudinal direction of the portion with a strong beam intensity for example, the length Lc 150 // m. 18a than the irradiation area of the laser beam 18, the intensity of the slit 16b of the longitudinal length of the beam intensity based part length Ls 18594862 shorter length Lc of the width W of the slit 16b the slits 16b, for example, 5 # m.X direction intervals of, for example, a slit 16b of ρχ 200 / zm.Y direction Ργ intervals of, for example, 120 // m. when such amorphous silicon film for the laser beam 18 Η when the scanning sn, only a part of the laser beam 5 of 18 Shot region 18a will intersect the slit 16b in this modification, when the laser beam 18 is irradiated region 18a and the slit 16b intersect 'Although the entire region is not irradiated with the laser beam 18 and the slit 18a 16b intersect, but as long as at least one part of the laser beam irradiation areas 18a 16b 18 of the cross slit, hindering crystal growth can continue. 10 Thus, by this modification, while also preventing film peeling, while the growth of good crystallinity. further, even if the film is peeled off generating, by the slit 16b or the barrier film may peel off continues. so 'by modification of the present embodiment, it may be formed of a semiconductor thin film having good crystallinity, high yield without having the amorphous silicon film 4 is formed Shu island pattern. 15 (Modification (No. 3)) Next, a method for crystallizing a semiconductor thin film according to Modification (No. 3) of this embodiment will be described with reference to FIG. 7. 7 a plan view of a crystallization method based semiconductor thin film of the present modified embodiment of the display. The main feature of the crystallization method of the present modification of the semiconductor thin film 20 is irradiated to the long length of the slit 16c ^ Ls of the length of the lines representing the laser beam 18 to the area 18a of the longer length LA. As shown in FIG. 7, in the amorphous silicon film 14 is formed a slit 16c of the majority. Slit 16c of the longitudinal length Ls, for example, 5〇〇 # m. Irradiation field region 18a of the laser beam 18, the intensity of the beam intensity of the portion of the longitudinal length LC, as aforesaid, to 19594862 e.g. 150 # m. Irradiation region 18a of the longitudinal length of the slit 16c more lines Ls of the laser beam 18, the beam intensity of the strong part of the length Lc to the length of the longer. The width W of the slit 16c is, for example, 5 // m. The X-direction slit intervals of, for example, between ρχ 16〇 20 # m. Ργ gap between intervals of, for example, Υ direction of l6c 2〇〇 // 5 m. Most by arranging lengthwise of the slit 16c, can constitute the whole of intermittent slits. When the scanning laser beam 14 in this amorphous silicon film 18, and when the slot 18a when post 16c of the laser beam irradiated area 18, based in whole or in part of the laser beam 18 is irradiated region 18a and the slit 16c intersecting . Because when the laser beam 10 at least a portion of the region 18 is irradiated with slits 18a and 16c cross, can hinder the growth of crystals continues, film peeling can be prevented. In addition, as described above, even if film peeling has occurred, if at least a part of the irradiation area 18a of the laser beam 18 intersects the slit 16c, the film peeling can be prevented from continuing. Therefore, by this modification, a high yield can be formed in the semiconductor thin film 15 having good crystallinity of the amorphous silicon film 14 is formed without having an island pattern. (Modification (fourth)) Next, a method for crystallizing a semiconductor thin film according to a modification (fourth) of the present embodiment will be described with reference to FIG. 8. Fig. 8 is a plan view showing a crystallization method of a semiconductor thin film according to this modification. 20 The main feature of the crystallization method for a semiconductor thin film according to this modification is that the slit 16d is formed obliquely with respect to the scanning direction of the laser beam 18, that is, the X direction. As shown in FIG. 8, a large number of slits 16 d are formed in the amorphous silicon film 14. The slit 16 d is formed obliquely with respect to the scanning direction of the laser beam 18. 20594862 angle laser scanning direction and the length of the slot 16d of the beam 18 is formed as 0 Example 45. . The width W of the slit 16d, for example, 5 // m. Long slit 16d, for example, in the + Ls of 300 / zm. Most of the lines to the slit 16d χ ^ to a direction shifted from each other. Shifting the X-direction slit 16d, for example, the spacing £ ^ 2〇 // m. 5 Most of the slit lines are formed to overlap each other in the Y direction. Nie distance DY γ heavy direction of the slit, for example, 20 / zm. The majority of the slits 16d arranged in the longitudinal direction can form intermittent slits as a whole. When the laser beam 18 is scanned on the amorphous chip 14 having the slit 16d formed therein, the irradiation area 18a of the laser beam 18 crosses it obliquely with respect to the length 10 of the slit i6d. Even if the irradiated area 18a of the laser beam 18 intersects it obliquely with respect to the length of the slit 16d, when the irradiated area 18a of the laser beam 18 intersects the slit 16d, it can still hinder the crystal growth from continuing. In addition, even if film peeling has occurred, when the irradiation area 18a of the laser beam 18 and the slit 16d cross, the film peeling can be prevented from continuing. 15 Therefore, with this modification, it is also possible to form a semiconductor thin film having good crystallinity with high yield without having to form the amorphous silicon film 14 into an island-like pattern. (Modification (No. 5)) Next, a method for crystallizing a semiconductor thin film according to Modification (No. 5) of this embodiment will be described with reference to FIG. 9. Fig. 9 is a plan view showing a crystallization method of a semiconductor 20 thin film according to this modification. The main feature of the crystallization method for a semiconductor thin film according to this modification is that the slit 16e is formed obliquely with respect to the scanning direction of the laser beam 18, and the slit 16e is formed continuously, and one end of the amorphous silicon film 14 reaches the other end portion. 21 594862 As shown in FIG. 9, a slit 16e is formed obliquely in the amorphous silicon film 14 with respect to the scanning direction of the laser beam 18. The angle 0 formed by the long direction of the irradiation area 18a of the laser beam 18 and the long direction of the slit 16e is, for example, 45 °. The width W of the slit 16e is, for example, 5 // m. 5 When scanning the laser beam 18 on the amorphous silicon film 14 with the gap 16e formed therein, when the irradiation area 18a of the laser beam 18 and the gap 16e intersect, the crystal growth is prevented from continuing. Further, even if film peeling has occurred, when the irradiation area 18a of the laser beam 18 intersects the slit 16e, the film peeling can be prevented from continuing. 10 Therefore, with this modification, it is also possible to form a semiconductor thin film having good crystallinity with high yield without having to form the amorphous silicon film 14 in an island-like pattern. (Second Embodiment) FIG. 10 by the first through twelfth view illustrating the method of crystallizing the semiconductor of the second embodiment of the present invention is a thin film. FIG displaying step based on FIG. 10 (one of) the crystallization method of the present embodiment aspect of the semiconductor thin film 15. 10 a sectional view of FIG lines. FIG 11 based on a process diagram showing a method of crystallizing a semiconductor thin film morphology of the present embodiment (part two). 11A, 11C, and 11E are cross-sectional views, and FIGS. 11B, 11D, and 11F are plan views. FIG. 11A based on cross-sectional view taken along the line A -A of FIG. 11B the 'direction. A section along line of FIG. Llc FIG. 11D - A cross-sectional view taken along line 20. Fig. 11E is a cross-sectional view taken along line A-A > of Fig. 11F. Fig. 12 is a plan view showing a crystallization method of a semiconductor thin film according to this embodiment. Further, for the same crystallization method in the first embodiment of the semiconductor thin film components, endowed with the same reference numerals, and description thereof will be omitted or be simplified. 22594862 embodiment of Major features of the method of crystallizing a semiconductor thin film in the form of: amorphous silicon film 14 is formed in the groove 36, and scanning the laser beam 18, 36 with cross grooves serve yet. First, as in the method of crystallizing a semiconductor thin film 5 of the first embodiment, the entire surface on the glass substrate 10, silicon oxide film 12 are sequentially formed and the amorphous silicon film 14. Thereafter, in the same manner as the crystallization method of the semiconductor thin film of the i-th embodiment, a heat treatment for dehydrogenation is performed (see FIG. 10A). Next, as shown in FIG. 10B, the photoresist film 38 is formed on the entire surface by, for example, a spin coating method. 10 Then, using lithography imaging technique, in the photoresist film 38 is formed an opening portion 40 reaching the polysilicon film 14 of the non. The opening 40 is formed from one end of the amorphous silicon film 14 to the other end. Next, as shown in FIG. 10C first, the resist film 38 as a mask to etch the amorphous silicon film 14. In this case, amorphous silicon film 14 is etched so that a depth by depth from the surface of the amorphous silicon film 15 Μ e.g. the 30nm. Thus, as shown in FIG. 12, the groove 36 is continuously formed, serve reach the other side end portion by the one side end portion 14 of the amorphous silicon film. The width W of the groove 36 so e.g. as 5em. Then 'section as shown in FIG. 11A, a resist film 38 is removed. Next, as shown, the scanning laser beam 18, and the groove 20 serve% of the parent 11B and 11C in FIG. Since the groove 36 is formed at a portion of the non-discontinuous μ membrane spar evening, to some extent it can hinder crystal growth. If the length of the crystal growth continuation is set to be shortened to a certain degree, film peeling tends to be difficult to occur as described above, so that a semiconductor thin film with good crystals can be formed while preventing film peeling from occurring. 23,594,862 and, even if the film has been peeled off is generated, but the laser beam 36 is irradiated crossing region 18a and the groove 18, the barrier film is peeled off can continue. Therefore, according to this embodiment, a semiconductor thin film having good crystallinity can be formed with a high yield without having to form the amorphous silicon film 14 in an island-like pattern. 5 (third embodiment)

Using FIGS. 13 through FIG. 15 illustrate the method of crystallizing the semiconductor of the third embodiment of the present invention is a thin film. Fig. 13 is a flowchart (part 1) showing a method for crystallizing a semiconductor thin film according to this embodiment. Figure 13 is a sectional view. Fig. 14 is a step 10 (No. 2) showing the crystallization method of the semiconductor thin film of this embodiment. Of FIG. 14A, FIG. 14C first, based on a sectional view of FIG. 14E, FIG. 14B and the first, second FIG. 14D, 14F of FIG plan view of the system. Fig. 14a is a cross-sectional view taken along line A-A 'of Fig. 14B. Figure 14C is a cross-sectional view taken along line A-A of Figure 14D. The first line in FIG. 14E of FIG. 14F of A-A " cross-sectional view taken line. Fig. 15 is a plan view showing a method of crystallizing the junction 15 of the semiconductor thin film of this embodiment. In addition, the same constituent elements as those of the crystallization method of the semiconductor thin film according to the first or second embodiment are given the same reference numerals, and the description is omitted or abbreviated. The main feature of the crystallization method for a semiconductor thin film according to this embodiment is that a part of the amorphous silicon film 14 is formed with a band made of the amorphous silicon film 14 on the surface of the amorphous silicon film 14 by partially etching the surface The laser beam 18 is scanned, and the beam pattern 44 intersects with the band pattern 44. First, in the same manner as the method for crystallizing a semiconductor thin film according to the first embodiment, a silicon oxide film 12 is formed on the entire glass substrate 10. Next, by a CVD method such as electrical polyethylene, the non-fully form a thicker film 24 Xi spar 14. Let the amorphous material be, for example, 30 nm. 4 'Soil crystallization method as in the first embodiment of the semiconductor thin film to a heat treatment for the dehydrogenation (refer to FIG. 13A). Who then, as FIG. 13B of the #, for example by spin coating, the resist film 42 into a full terrain. Next, the photoresist film 42 is formed into a band pattern by using a lithography imaging technique. Based resist film 42 is continuously formed force, reach the side end portion to serve non-spar 14 of the other side of the membrane evening ends. 10 Then, as shown on FIG. 13C, the resist film 42 as a mask to etch the amorphous film evening from 14 to a depth of 200nm from the surface of the membrane 14 of the non-spar evening. Thus an amorphous silicon film 14 to the surface of a belt-like pattern 14 of the amorphous silicon film 44 is formed. Let the width W of the stripe pattern 44 be, for example, 10 // m. Stripe pattern is formed continuously feed lines, it serves reach the other side end portion by the one side end portion 14 of the amorphous silicon film. Next, as shown in FIG. 14A, the photoresist film 42 is removed. 'After the first as shown in FIG. 14B and 14C, the scanning laser beams 18, 44 serve cross the stripe pattern. In the area formed by the stripe pattern 44, since the thickness of the amorphous silicon film 14 is made thicker by the stripe pattern 44, the heat capacity is large. Therefore, the amorphous silicon film 14 does not melt in a region where the stripe pattern 44 is formed. Therefore, although the laser beam 20 is irradiated region 18a and the belt-shaped pattern 18 of the cross 44, may hinder crystal growth continues. Since the crystal growth continues if the length is set to reduce an extent, then, as aforesaid, film peeling tends to less likely to occur, it is possible to prevent film exfoliation _ edge, while forming a semiconductor thin film having good quality of crystal. 25,594,862 and, even if the film has been peeled off is generated, but when the laser beam irradiation area 18 of the belt-shaped patterns 18a and 44 intersect, or may hinder the continuation of film peeling. Thus' evil shaped by this embodiment, the yield may be formed south semiconductor thin film having good crystallization of the amorphous silicon film 14 is formed without having an island pattern. 5 (fourth embodiment) the I. FIG. 16 and using the FIG. 17 described method of crystallizing the semiconductor of the fourth embodiment of the present invention is a thin film. Fig. 16 is a flowchart showing a method for crystallizing a semiconductor thin film according to this embodiment. 16A, 16C, and 16E are cross-sectional views, and FIGS. 16B, 16D, and 16F are plan views. 10 based on FIG. 16A FIG. 16B along the A - cross-sectional view taken along a line. FIG i6c based on cross-sectional diagram of FIG 16D taken along the line A -A-. Figure 16E is a cross-sectional view taken along line A-A 'of Figure 16F. 17 a plan view of FIG crystallization method based semiconductor thin film morphology of the present embodiment is displayed. In addition, a semiconductor film and crystallization of i to the third embodiment of the element 15 to the same configuration, and assigned the same reference numerals, and description thereof will be omitted or be simplified. The main feature of the method of crystallizing a semiconductor thin film according to the present embodiment in the form of a pattern composed of strip-to a metal film 46 is formed above said non-silicon film 14 of the said, and scanning the laser beam 18, and a stripe pattern crossing serve female. First, as in the method of crystallizing the semiconductor thin film according to the first aspect of 2〇 embodiment, the entire surface on the glass substrate 10, an oxide film are sequentially formed stone Xi Xi spar 12 and the non-membrane followed by 14 billion, for example, by a CVD method, Xi spar on the non-film 14 having a thickness of, for example, 1〇〇_ stone stone Xi Xi oxide film 57 of the oxide film 45. Xi stone with a non-oxide-based film membrane separation Xi spar 14 and the belt-shaped pattern constituted by a metal film 46. 26 594862 Then, a heat treatment for dehydrogenation is performed in the same manner as in the crystallization method of the semiconductor thin film of the first embodiment. Subsequently, a metal film opportunity Mine Act. A metal film may be used, for example, rely 鶬 film or a metal film high refining. 5 Next, the lithography imaging, Qing metal strip into a pattern (refer to FIG. 16A). Line stripe pattern is formed continuously, the other side end portion (see FIG. 17) reaches the side end portion serve film 14 of amorphous silicon. So that the pattern width W, for example, l0 / zm. In this way, a band pattern 46 made of a metal film is formed. 10 Next, as FIG. 16B and FIG 16C, the scanning laser beam 18, and serve a stripe pattern composed of intersecting metal film 46. The laser beam 18 can be reflected by the band pattern 46 in the area formed by the band pattern 46 made of metal 构成. Therefore, in the area where the stripe pattern 46 is formed, the amorphous silicon film 14 does not melt. Therefore, when the laser beam 18 is irradiated regions 18a pattern 46 and the strip 15 cross, it may hinder crystal growth continues. If the length of the crystal growth continuation is set to be shortened to a certain degree ', as described above, film peeling tends to be difficult to occur, so a semiconductor thin film with good crystals can be formed while preventing film peeling from occurring. Also, even if the film peeling has occurred, when the irradiation area 18a of the laser beam 18 intersects with the stripe pattern 46, the film peeling can be prevented from continuing. Therefore, according to this embodiment, a semiconductor thin film having good crystallinity can be formed with a high yield without having to form the amorphous silicon film 14 in an island-like pattern. (Fifth Embodiment sad shape) using FIGS. 18 and FIG. 19 illustrate the method of crystallizing the semiconductor fifth embodiment of the present invention 27594862 thin film. FIG 18 based on a process diagram showing a method of crystallizing a semiconductor thin film morphology of the present embodiment. Of FIG. 18A, FIG. 18C first, based on a sectional view of FIG. 18E, FIG. 18B and the first, second FIG. 18D, 18F of FIG plan view of the system. FIG 18A along a first line of A -A of FIG 18B, a sectional view taken along a line. Fig. 18C is a sectional view taken along line A-A- in Fig. 18D. Figure 18E is a cross-sectional view taken along the line AA 'of Figure 18F. Figure 19 a plan view of the crystallization method based semiconductor thin film morphology of the present embodiment is displayed. In addition, the same constituent elements as those of the crystallization method of the semiconductor thin film according to the first to fourth embodiments are given the same reference numerals, and the description is omitted or abbreviated. 10 The main feature of the crystallization method for a semiconductor thin film according to this embodiment is that a dielectric film 48 having a gap 50 is formed on the amorphous silicon film 14 and the laser beam 18 is scanned so that the radium intersects the gap 50. First, in the same manner as the crystallization method of the semi-isotropic thin film of the first embodiment, a silicon oxide film 12 and an amorphous silicon 15 film 14 are sequentially formed on the entire glass substrate ο. Secondly, for example, a CVD method is used to comprehensively地 Forming a dielectric film 48. The dielectric film 48 may be formed of, for example, a silicon oxide film. So that the dielectric film of a thickness of the towel 48 / 4n, or λ (m + i) / 4n. Here, n is the refractive index of the dielectric film. " If the electrical film 48 is a stone evening oxide film, the refractive index η is 1.42. λ is the laser beam of a wavelength of light 2〇. The wavelength λ of the laser beam is, for example, 532 nm. m is a positive integer. If the film thickness of the dielectric film 48 so set, the region where the dielectric film is formed of the call, the reflectance of the laser beam 18 becomes the minimum value. Thus, by the film thickness of the dielectric film 48 so set, it can be sufficiently amorphous silicon film on the laser beam should be 18 ^ 14. 28594862 Then, the crystallization method of the first embodiment of the semiconductor thin film - like the 'heat treatment for dehydrogenation of. Next, a slit 50 is formed in the dielectric film 48 using a lithography imaging technique (see FIG. 18A). Department of slits 50 formed continuously from the side end portion serve reaching amorphous silicon film 514 of the other side end portion (see FIG. 19). So that the slit width W 50 of, for example, 10 / zrn. The dielectric film thickness d2 of the reflectance of the laser beam 18 is a maximum value of 48 billion 'or and m / 2n. Since the present embodiment, the film thickness d2 'of the dielectric film is formed in the domain region of the slot 50 to 48. ONM, so there is a gap 10 of field region 50 is formed, may, by a large reflectivity of the reflected laser beam 18. Next, as FIG. 18B, and FIG 18C, the scanning laser beam 18, the slit 50 serve cross. At this time, the intensity of the laser beam appropriately set # 18 of the scanning speed, so that a region where the dielectric film 48, the amorphous silicon film 14 will be of rubber, and is formed in the region of slits 50, amorphous silicon The film 14 does not melt. 15 Accordingly, by the present embodiment, when the laser beam irradiation area 18a of the cross slit 18 and 5〇, may hinder crystal growth continues. If the length of the crystal growth continuation is set to be shortened to a certain degree ', as described above, film peeling tends to be difficult to occur, so a semiconductor thin film with good crystals can be formed while preventing film peeling from occurring. 20 and, even if the film has been peeled off is generated, but when the laser beam 18 is irradiated region 18a of the cross slit 50, or the film peeling may hinder continuation. Therefore, according to this embodiment, a semiconductor thin film having good crystallinity can be formed with a high yield without having to form the amorphous silicon film 14 in an island-like pattern. (Sixth Embodiment sad shaped) 29 594 862 20 using FIGS. 22 through FIG crystallization method described semiconductor fifth embodiment of the present invention is a thin film. Fig. 20 is a flowchart (part 1) showing a method for crystallizing a semiconductor thin film according to this embodiment. Figure 20 is a sectional view. 21 FIG 5 FIG line display step (second) method of crystallizing a semiconductor thin film morphology of the present embodiment. 21A, 21C, and 21E are cross-sectional views, and FIGS. 21B, 21D, and 21F are plan views. 21A along section line A of FIG. FIG. 21B - A cross-sectional view taken along a line. Of FIG 21C along line A of FIG. 21D - A cross-sectional view taken along a line. The first line in FIG. 21E 21F A section of FIG. - A - cross sectional view taken line. 22 A plan view of FIG 10 based semiconductor thin film crystallization method of the present embodiment aspect of display. In addition, the same constituent elements as those of the crystallization method of the semiconductor thin film according to the first to fifth embodiments are given the same reference numerals, and the description is omitted or abbreviated. The main feature of the method of crystallizing a semiconductor thin film of the present embodiment aspect in that: a groove formed in the dielectric film 4856 on the amorphous silicon film 14, 15 and scanning the laser beam 18, the grooves 56 serve cross. First, a semiconductor thin Ge crystallization method according to the first embodiment of the same manner, on the entire surface of the glass substrate 10, silicon oxide film 12 are sequentially formed and the amorphous silicon film 14. Next, a dielectric film 牝 is comprehensively formed by, for example, a CVD method. The dielectric body film 48 may be formed of, for example, a silicon oxide film. So that the dielectric film having a thickness of 48 to the mountain / 4η, or λ (m + 1) / 4η. As aforesaid, if the thickness of the dielectric film is set so Yak of the body, a dielectric region 48 is formed of the film, the reflectance of the laser beam 18 becomes the minimum value. Thus, by the film thickness of the dielectric film so female set, amorphous silicon film 14 can be sufficiently supplied to the laser beam 18. 30594862 manner, then 'crystallization method of the first embodiment of the semiconductor thin film to a heat treatment for dehydrogenation of. Similarly, as shown in Fig. 20B, for example, the photoresist film 52 is formed by being rotated. Coating method, comprehensive terrain 5 Then, Lili shadow technology, material _52, is formed to the opening 54 of the galvanic film 48. An opening portion 54 formed continuously lines, each of the side end portion of the amorphous film 14 to reach the other side of the end portion. Next, as shown in FIG. 20C, by using the photoresist film 52 as a mask, the dielectric film 48 is etched to form a groove 56. The reflectivity of the laser beam 18 is maximum

The film thickness d2 of the dielectric body 10 is Q, or Am / 2n, as described above. In this embodiment, the depth of the groove 56 is set so that the thickness of the dielectric film 48 immediately below the groove 56 is m / 2n. As shown in FIG. 22, line 56 is formed by the groove side end portion of the amorphous silicon film 14 to reach the other side end portion. The width w of the groove 56 so that, for example, 15 10 // m square Subsequently, as shown in FIG. 21A first, the resist film 52 is removed. After 'as shown in FIG. 22' 18 scanning the laser beam, and the groove 56 serve to pay. At this time, the intensity and scanning speed of the laser beam 18 can be appropriately set so that the amorphous silicon film 14 will be melted in the area where the groove 56 is not formed, and the amorphous silicon film 14 will not be formed in the area where the groove 56 is formed. It will melt. Thus, by this embodiment shaped 2〇 state 'when the post 56 is irradiated region 18a and the groove 18 of the laser beam and may hinder the continuation of the crystalline growth. If the length of the crystal growth continuation is set to be shortened to a certain degree, film peeling tends to be difficult to occur as described above, so that a semiconductor thin film with good crystals can be formed while preventing film peeling from occurring.

31,594,862 and, even if the film has been peeled off is generated, but when the laser beam irradiated area 18 of 18 & 56 when crossing the groove, or may hinder the continuation of film peeling. Therefore, according to this embodiment, a semiconductor thin film having good crystallinity can be formed with a high yield without having to form the amorphous silicon film 14 in an island-like pattern. (Modified Embodiments) The present invention is not limited to the foregoing embodiments, but can be modified in various ways. For example, the embodiment described above, based upon the embodiments described by the surface of the glass substrate of the laser beam irradiation side, but also from the inside of the glass substrate side of the laser beam is irradiated. Further, the embodiment described above, a glass substrate as described based upon embodiments of the substrate, but the substrate is not limited to the glass substrate, and can be suitably used a cut substrate. Further, the second to fifth embodiment, system 36, 56 will be described, strip patterns 44, 46, or when the slit groove 50 is formed in Example 15 of the other side end portion by the one side end portion of the amorphous silicon film 14 reaches However grooves 36, 56, 44, 46, the planar shape of a stripe pattern or slits 50 is not limited thereto, as a first modification of the embodiment aspect (one) to the modification example (5), can also be suitably setting grooves 36, 56, 44, 46 belt-shaped pattern, or the planar shape of the slit 5〇. And 'the foregoing embodiment, that the system described by amorphous silicon film is crystallized, when the cases 20 are formed to serve composed of a silicon semiconductor thin film, but crystallization of the material of the film is not limited to silicon, can also be applied to cause all other A case where a film made of a material crystallizes to form a semiconductor thin film. And 'the foregoing embodiment, based instructions Nd: YVO4 laser when the laser embodiment as, but not limited to Nd: YVO4 laser, for example, may also be used 32594862

Nd: YAG laser, Nd: YID laser, etc. Further, the embodiment described above, the use of silicon-based oxide film as dielectric film 48 ', but the dielectric film 48 is not limited to stone Xi oxide film can also be formed by other - the dielectric film constituting the cut material. 5 Further, the embodiment described above, based on the glass substrate 10 and the amorphous silicon film 12 is formed between the silicon oxide film 14, but the film 14 is formed between the glass substrate and the non-spar 1〇 Xi Xi film is not limited to stone Oxide film. For example, a silicon oxide film and a silicon nitride film may be formed between the glass substrate and the amorphous silicon film 14. In the foregoing embodiment, the glass substrate 10 is moved by using the χ_γ translation stage 32 to scan the irradiation area 18a of the laser beam 18, but it is also possible to scan by moving the laser beam 18 side. The irradiation area 18a of the laser beam 18 is scanned. In the foregoing embodiment, the shape of the point i8a of the laser beam 18, that is, the shape of the R? And the radiation region 18a, is described as an example of a rounded shape, but the shape of the irradiation area 18 & of the laser beam 15 18 It is not limited to an oval shape, and may be set as appropriate. A method of crystallizing a semiconductor thin film may be utilized according to the present invention is industrially useful in that it may be formed of crystalline semiconductor film is still good yield without having to form an island pattern 20. [Brief description of the drawings] FIGS. 1A to F are cross-sectional views and plan views showing a crystallization method of a semiconductor thin film according to a first embodiment of the present invention. FIG. 2 is a plan view showing a method for crystallizing a semiconductor thin film according to a first embodiment of the present invention. Fig. 3 is a schematic view showing a crystallization apparatus. Figures 4A to B are plan views showing the shape of the points of the laser beam, and the views showing the crystal state of silicon obtained by scanning the laser beam. ≫ FIG. 5 is a plan view showing a method for crystallizing a semiconductor thin film according to a first modification of the first embodiment of the present invention. Fig. 6 is a plan view showing a method for crystallizing a semiconductor thin film according to a modification (second) of the first embodiment of the present invention. 7 a plan view of a crystallization method based modification (third) embodiment of the first aspect of the present invention, a semiconductor thin film display. Fig. 8 is a plan view showing a method for crystallizing a semiconductor thin film according to a modification (fourth) of the first embodiment of the present invention. A plan view of FIG. 9 based on the method of crystallizing a semiconductor thin film of a first embodiment of the present invention Shu modification of form (part five) of the display. FIG displaying step based on 10A~C figure (1) a method of crystallizing a semiconductor thin film of the second embodiment of the present invention. Figures 11A to F are step diagrams (No. 2) showing a crystallization method of a semiconductor thin film according to a second embodiment of the present invention. Figure 12 A plan view crystallization method based semiconductor thin film of the second embodiment of the present invention. FIG displaying step based on 13A~C figure (1) a method of crystallizing a semiconductor thin film according to the third embodiment of the present invention. FIG displaying step based on FIG 14A~F (crystallization method of a semiconductor thin film according to the third embodiment of the present invention, two lines of FIG. 15 is a plan view of the method of crystallizing a semiconductor thin film of a third form of embodiment of the present invention. The first 16A~ FIG displaying step F-based method of FIG crystallized semiconductor thin film according to the fourth embodiment of the present invention. FIG. 17 a plan view of the crystallization method based semiconductor thin film of a fourth form of embodiment of the present invention. FIG. 18 A~F lines showed brother FIG step crystallization method of a semiconductor thin film of the fifth embodiment of the present invention. FIG. 19 a plan view of the crystallization method based semiconductor thin film of the fifth embodiment of the present invention. FIG 20A~C based on a sixth embodiment of the present invention show FIG step (one of) the method of crystallizing the semiconductor thin film form. the first step 21A~F view appearing in FIG. (a method of crystallizing a semiconductor thin film of the sixth embodiment of the present invention, the first second is not significant to the present system 22 of FIG. crystallization method of the invention is a plan view of a semiconductor thin film of the sixth embodiment. FIG. 23 is a view showing the film peeling. 24A~B first plan view of FIG feature based pattern displayed Islands FIG 25A~C first lines showed that the island pattern when the crystallization step is formed in a thin film transistor in FIG. 594 862 [pigsty formula principal element symbol representing] Table 10 .. The glass substrate silicon oxide film 12, 45 ... 14 .. . 16, 16 amorphous silicon film \ 165,16〇, 16 (1,16150 ... slit 18 ... laser beam irradiation region 18a ... 20 ... .. laser beam source portions 22. 24. & quot concave ;. .. mirror 26.28 convex cylindrical lens 30 ... 32 .. .XY 34a ... translatable central laser beam scanned over the region of Taichung part 34b ... other than the central portion of the portion 36, 56 ... 38,42,52 ... groove opening portion of the resist film 40, 54 ··· · 44.46 stripe pattern .. 104,104a, 104b ··· island pattern 106 ... .. edge portion 108. island- central portion 110 of the pattern .. the operation of the semiconductor film 112 ... 114 .. gate thin film transistor

48 ... Dielectric film 100 ... Silicon film 102 ... Film peeling 36

Claims (1)

5 pick, patent range: the method of crystallizing the semiconductor film, there is a thin film-formed on a semiconductor substrate, comprising the step of; by crystal growth in the length of the portion of the heart preventing scanning of a continuous wave in the direction of the cross-ί The energy beam makes the semiconductor thin film junction step 10, such as the semi-conductor of the first patent application scope, the crystallization of the body stem film, etc.-forming a band to prevent the semiconductor mentioned above ^ crystallization step # film with conductive material prior to the step of film-forming slits, and 'so that the semiconductor thin the step Choi, based on the "father slit long in the direction of the fork, while scanning the energy beam part growth . Step 3. The patentable scope of the method of crystallizing a semiconductor thin film applications, Paragraph 1, wherein the strip portion is formed to hinder the crystallization of the semiconductor thin film having a growth of: forming a dielectric film on said semiconductor thin blade Shu step and the step of the dielectric film to the step of forming a slit, and, to make the crystal of the semiconductor thin film, the slit lines in the long direction of the cross, the scanning energy beam. 4. The application Partly patentable scope of the 2 < method of crystallizing a semiconductor thin film 3, the Xiu said that the aforementioned semiconductor film crystallization step wherein, the 37 lines in respect of the long gap of a direction substantially perpendicular to the sweep interpolating the energy beam. For example, in the crystallization of a semiconductor thin film in the second or third aspect of the patent application, wherein in the aforementioned step of forming the slit, the aforementioned slit is continuously formed, from one end of the semiconductor film to the other. • The application step is crystallized semiconductor thin film side patentable scope of the 2 or 3 to wherein the formation of the slit in the slit lines are formed intermittently. • Step The crystallization method of the patent application range of the semiconductor thin film 2 or the 3 'wherein the forming the slit in a direction crossing the lines to, and spaced the length of the slit of the slit is formed of a majority, and , so that the crystallization of the semiconductor thin film step, scanning lines months' J said energy beam, said energy beam may serve sequentially intersecting with the majority of the slot. 8. The method for crystallization of a semiconductor thin film according to item 1 of the application, wherein the step of forming a strip-shaped portion to hinder the crystalline growth of the semiconductor thin film includes partially etching the surface of the semiconductor thin film, the step of forming a strip-shaped pattern of the semiconductor thin film, and, so that the crystallization step of the semiconductor thin film on the surface of the semiconductor thin film in the long line in the direction crossing the stripe pattern, the scanning the energy beam. 9. The patent application range of the semiconductor thin film 1 as item 38 square crystallization method in which the strip is formed of a semiconductor thin film for the hindering of ', QB step of growing said portion having the semiconductor thin film formed on the step of the belt-shaped pattern of the metal film, but also, so that the crystallization of the semiconductor thin Ge step, based on the long strip of the pattern and the cross direction, the scanning energy beam. 10. The application range of the method of crystallizing a semiconductor thin film of Patent 8 or 9, the semiconductor thin film in which the crystal so that the step, based on the relative length of the belt-shaped pattern is substantially perpendicular to a direction of scanning said energy bundle. 10 U. Step 8 The patentable scope of the method of crystallizing a semiconductor thin or medium 9 of the application, which the towel before the thin sheet material (iv) to the San stripe pattern of 'the lines are continuously formed in a stripe pattern, serve From the -end portion of the semiconductor film to the other-end portion. 15 12. The crystallization method for a semiconductor thin film according to claim 8 or 9, wherein the aforementioned strip-shaped pattern is continuously formed as described above. 13. Application system off in the crystallization range of 20 eight Patent said semiconductor thin film is formed of 8 or 9 of the ribbon-step pattern, with long recognition of the stripe pattern in a direction of intersecting each other and most of the stripe pattern is formed, * > = the two semiconductor thin-step, the scanning system, this beam Huang 'serve the energy beam sequentially and most of the stripe pattern and cross. 14. Patent application range of the semiconductor thin film 1, Paragraph crystallization method 39594862 side, so that the crystallization of the semiconductor thin film wherein in step, the plurality of scanning-based energy beam, to serve the executors of the energy beam irradiation area can be Partially overlap. 15. Patent application range of the semiconductor thin film 1, Paragraph 5 square crystallization method in which the energy beam-based laser excited by a semiconductor laser beam 0 40