TW594825B - Electron gun for cathode ray tubes - Google Patents

Electron gun for cathode ray tubes Download PDF

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Publication number
TW594825B
TW594825B TW91136649A TW91136649A TW594825B TW 594825 B TW594825 B TW 594825B TW 91136649 A TW91136649 A TW 91136649A TW 91136649 A TW91136649 A TW 91136649A TW 594825 B TW594825 B TW 594825B
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Taiwan
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cathode
electrode
electron
microbeams
micro
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TW91136649A
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Chinese (zh)
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TW200301498A (en
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Olivier Pierre Trinchero
Jean-Luc Ricaud
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Thomson Licensing Sa
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/56Arrangements for controlling cross-section of ray or beam; Arrangements for correcting aberration of beam, e.g. due to lenses
    • H01J29/566Arrangements for controlling cross-section of ray or beam; Arrangements for correcting aberration of beam, e.g. due to lenses for correcting aberration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/481Electron guns using field-emission, photo-emission, or secondary-emission electron source

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  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)

Abstract

Electron gun for cathode-ray tubes, comprising at least one cathode based on field-effect microemitters, the microbeams of which converge on a region in such a way that the two points of convergence of the microbeams in the horizontal and vertical directions are two separate points Ox, Oy in this region.

Description

594825 ⑴ 玖、發明說明 (發明說明應敘明:發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) _ 本發明關於用於陰極射線管之電子搶,其併入—基於冷 · 發射型之微發射體之一陰極系統,特別關於適於用於此型 ' 陰極射線管之電子搶結構。 · 一傳統電子搶利用一或多個熱燈絲熱陰極,在陰極之後 具有一連續電極以構成電子波束,之後再永久聚焦在管之 螢幕上,顯示之影像即在其上再生。 · 連續電極之意義為電子搶之長度相當長,並為決定射線 管之最後路徑之一因素。 因為掃描管之螢幕之電子束之反射角度實際上保持為 110度,此一深度隨該螢幕對角線之尺寸而迅速增加,而目 前消費者趨向為選擇較大但最小深度之螢幕。 此外,陰極射線管之電子搶必須能在影像螢幕之全表面 具有最少失真之著路點之形狀。此一需求在社線管欲再生 之彩色影像時則難以達成,因為電子搶輸出之三波束必須 在螢幕上收斂。離開螢幕之中心,收斂係由一磁偏轉系統 鲁 達成,亦稱偏轉器,其偏轉磁場為象散。偏轉器磁場之象 散造成通過行動區域之波束失真,因此使影像上波束之著 路點之形狀失真。 如美國專利號碼US 5,430,349所指出,可使用不同方式於 熱陰極電子搶中以改正由象散偏轉場產生之波束失真,如 動態控制象散之裝置。但此等裝置需要引進額外之結構於 電子搶中’及與該電子搶之縮短抵觸。 - 本發明之目的為獲得一較短之電子搶,即在其沿主軸之 - 594825594825 玖 发明, description of the invention (the description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments and the simple description of the drawings) _ The present invention relates to the electronic grab for cathode ray tubes, which is incorporated based on- Cathode system, one of the cold-emission type micro-emitters, especially regarding the electronic grab structure suitable for this type of cathode ray tube. · A traditional electronic snare uses one or more hot filament hot cathodes, with a continuous electrode behind the cathode to form an electron beam, and then permanently focuses on the screen of the tube, and the displayed image is reproduced thereon. · The meaning of continuous electrode is that the length of the electron grab is quite long, and it is a factor that determines the final path of the tube. Because the reflection angle of the electron beam of the screen of the scanning tube actually remains at 110 degrees, this depth increases rapidly with the size of the diagonal of the screen, and currently consumers tend to choose a screen with a larger but smallest depth. In addition, the electron grab of the cathode ray tube must be able to have the shape of the waypoint with the least distortion on the entire surface of the image screen. This requirement is difficult to achieve when the social network wants to reproduce the color image, because the three beams output by the electronic grabbing must converge on the screen. Leaving the center of the screen, convergence is achieved by a magnetic deflection system, also known as a deflector, whose deflection magnetic field is astigmatism. The astigmatism of the deflector magnetic field causes distortion of the beam passing through the action area, thus distorting the shape of the waypoint of the beam on the image. As pointed out in U.S. Patent No. US 5,430,349, different methods can be used in hot cathode electronic grabbing to correct the beam distortion caused by the astigmatic deflection field, such as a device for dynamically controlling astigmatism. However, these devices need to introduce additional structures in the electronic grabbing and conflict with the shortening of the electronic grabbing. -The purpose of the present invention is to obtain a shorter electronic grab, i.e., along its main axis-594825

(2) 長度較小,及一陰極之特殊結構,其可能提供額外參數以 改正電子束上偏轉場之象散效應;改正偏轉場象散之效應 係經由在陰極内建立一波束,其象散效應可平均補償該偏 轉場之象散。 為此,本發明之電子搶包括: -一第一偏壓電極,亦稱陰極導體, -至少一冷發射之微發射體陣列,其被置於陰極導體上(2) The length is small and the special structure of a cathode may provide additional parameters to correct the astigmatism effect of the deflection field on the electron beam; the effect of correcting the astigmatism of the deflection field is to establish a beam in the cathode, the astigmatism The effect can evenly compensate the astigmatism of the deflection field. To this end, the electronic grab of the present invention includes:-a first bias electrode, also known as a cathode conductor,-at least one cold-emitting micro-emitter array, which is placed on the cathode conductor

,該等微發射體被電連接至該陰極導體以由場效應發射數 個電子微波束, -一擷取電極,其被置於陰極導體之上,該擷取電極包 含一孔隙區位於該等微發射體陣列之上, -一準直電極,用以縮小該等微波束之發射角,及 -至少一聚焦電極, 其特徵為該電子搶包含—裝置以使微波束收斂於在聚焦 極之對面侧之陰極後方之虛像區,#微波束在垂直及水 方向之二收斂點為虛像區中之二獨立點〇x ’ 〇y。The micro-emitters are electrically connected to the cathode conductor to emit several electron microbeams by the field effect, an extraction electrode is placed on the cathode conductor, and the extraction electrode includes a pore region located in the Above the micro-emitter array,-a collimating electrode to reduce the emission angle of the micro-beams, and-at least one focusing electrode, characterized in that the electron grabs-means for converging the micro-beam to In the virtual image area behind the cathode on the opposite side, the #convergence point of the #microbeam in the vertical and water directions is two independent points in the virtual image area 0x '〇y.

本發明之較佳療解及許多優點將可在以下說明 獲得,其中:The better healing and many advantages of the present invention will be obtained in the following description, among which:

圖1顯示 一傳統熱陰極輸出之電子 束形成區域之剖面 圖2為習知技藝基於場發射微尖陰極之剖面圖 圖3以透視說明本發明使用之原理; 實施例之微尖陰 圖4a,4b,4c及4d以剖面代表本發明第 極結構;及 (4)594825Fig. 1 shows a cross-section of an electron beam forming area output by a conventional hot cathode. Fig. 2 is a cross-sectional view of a field-emission micro-tip cathode based on conventional techniques. Fig. 3 illustrates the principle of the present invention in perspective. 4b, 4c, and 4d represent the pole structure of the present invention in cross section; and (4) 594825

之微尖12加以偏壓。陰極導體置於基板2上,通常由玻璃製 成以提供陰極機械強度。 一電阻層7可優異的沉積於微尖與陰極導體5之間,以便 改進自每一微尖之發射均勻性。一第二電極,亦稱為擷取 閘1 〇置於陰極導體5之上 其由一電絕緣層8與其絕緣。擷 取閘在每一微尖上有間隙,當與陰極導體之電壓相對為正The microtip 12 is biased. The cathode conductor is placed on the substrate 2 and is usually made of glass to provide the mechanical strength of the cathode. A resistive layer 7 can be excellently deposited between the microtips and the cathode conductor 5 to improve the emission uniformity from each microtip. A second electrode, also referred to as a capture gate 10, is placed on the cathode conductor 5, which is insulated from it by an electrically insulating layer 8. There is a gap on each microtip of the capture gate. When the voltage is positive relative to the voltage of the cathode conductor

數十至數百伏之電壓加在閘極時,後者發射一電子微波束 20 〇 將陰極併入電子搶中之一陽極以數千伏至數萬伏之電壓 方事使發射之電子加速。 在一標準構型中,擷取閘涵蓋陰極導體,但微發射體上 方之孔隙除外。此構型中,波束2〇與擷取閘之平面正交約 成30度角。When a voltage of tens to hundreds of volts is applied to the gate, the latter emits an electron microbeam 20 which incorporates the cathode into one of the electrons and the anode accelerates the emitted electrons at a voltage of thousands to tens of thousands of volts. In a standard configuration, the capture gate covers the cathode conductor, except for the pores above the microemitter. In this configuration, the beam 20 is orthogonal to the plane of the acquisition gate at an angle of about 30 degrees.

為降低此發射角,已知可置一微波束準直電極於微波束 之路徑中,如圖4c所示,該圖指出一發射元件12與擷取電 極10及準電極21。一減速電極22可置於電極1〇與21之間, 以便使發射電子減速,及使微波束2〇較佳之對直,其分散 角亦可進低至小於1度,較佳為〇 · 3度。以便以單一元件2 3 製造陰極,電極可用沉積金屬方式於絕緣層24上製造。 本發明之原理以圖3說明。一微發射體陰極,如陰極23放 射多個波束26。在陰極對稱之χζ平面觀之,微波束構成一 發射錐,其虛頂點形成一實際上點狀區〇χ位於2軸之上而 在陰極之後,其頂角為0Χ。在對稱γζ平面中觀之,微波束 形成一具有頂角©y之發射錐,其虛頂點構成一實際上點狀 -9-In order to reduce this emission angle, it is known that a microbeam collimating electrode can be placed in the path of the microbeam, as shown in Fig. 4c, which shows a transmitting element 12 and an extraction electrode 10 and a quasi electrode 21. A deceleration electrode 22 can be placed between the electrodes 10 and 21 in order to decelerate the emitted electrons and to better align the microbeam 20, and the dispersion angle can also be lowered to less than 1 degree, preferably 0.3. degree. In order to fabricate the cathode with a single element 2 3, the electrode can be fabricated on the insulating layer 24 by depositing metal. The principle of the present invention is illustrated in FIG. 3. A micro-emitter cathode, such as cathode 23, radiates a plurality of beams 26. Viewed from the χζ plane of the cathode symmetry, the microbeam constitutes an emission cone, and its imaginary vertices form a practical point-like region 0χ is located above the 2 axis and behind the cathode, its vertex angle is 0X. Viewed in the symmetric γζ plane, the microbeam forms a transmitting cone with a vertex angle y, and its imaginary vertices form a practical point shape -9-

594825 區〇y於Z軸上及陰極之後。在含z軸平面中觀微波束發射錐 似乎自區域40與點〇χ及〇y為界之虛頂點擴散。如圖3之例 所說明,點Οχ較點〇y距陰極較近,意即Θχ大於。因此 ’在與微波束之傳播垂直之平面,陰極23之總波束輸出似 乎較與Οχ平行方向之波束為扁長。 在本發明第一實施例中,如圖4a,4b,4c及4d所說明, 習知技藝電子搶之波束形成區如圖1所示,已以陰極23取代 ’其包含多個上述型式之發射體。陰極23以碟形構成一發 射矩陣’其軸與電子搶之主軸重合,其表面為曲線以便使 1 陰極輸出之總電子束32由分布在該表面之微發射體發射之 微波束組成,在區域40收斂之微波束26之頂點位於陰極之 後,該區域構成此例之虛交叉。 考慮圖4b,含傳播Z軸之切割平面及採取實際上圓形陰極 23之發射區邊緣,電子微波束2〇之頂點26分布在與z軸成角 孔隙ae之上,該軸與該陰極表面垂直及更成該陰極總波束 輸出之傳播軸。如圖4a所示,陰極被置於聚焦透鏡之第一 電極G3之入口處之電子搶中,一角孔隙〜實際上等於圖1 電子搶之角孔隙。第一聚焦電極之寬孔隙使其可利用具有 發射部分直徑與G3之孔隙直徑相近之陰極23。 已知在電子搶中二靜電透鏡間無互動作用,二者之距離 至少需為大於二透鏡之最大直徑1·5倍。在陰極射線管之電 子搶中’故焦透鏡之最大直徑約為5 mm。因此,根據本發 明之陰極,其直徑可能為lmm,為了具有與併入一熱陰極 之傳統結構相同之波束條件,即,在電流為5 m A時,使波 -10- 594825Area 594825 is on the Z axis and behind the cathode. The microbeam emission cone in the plane containing the z-axis appears to diffuse from the imaginary vertices bounded by the region 40 and points 0x and 0y. As illustrated in the example of Fig. 3, point 0x is closer to the cathode than point 0y, which means that Θχ is greater than. Therefore, in a plane perpendicular to the propagation of the microbeam, the total beam output of the cathode 23 appears to be flat longer than a beam parallel to 0χ. In the first embodiment of the present invention, as shown in FIGS. 4a, 4b, 4c and 4d, the beamforming area of the conventional art electronic grabbing is shown in FIG. 1. The cathode 23 has been replaced by 'cathode 23 which contains multiple types of emission described above. body. The cathode 23 constitutes an emission matrix in the shape of a dish. Its axis coincides with the main axis of the electron grabber. Its surface is curved so that the total electron beam 32 output by the cathode is composed of microbeams emitted by micro-emitters distributed on the surface. The apex of the 40 converging microbeam 26 is located behind the cathode, and this area constitutes the virtual crossover of this example. Considering Fig. 4b, the cutting plane containing the Z axis of propagation and the edge of the emission area of the substantially circular cathode 23 are taken. Vertically and more into the propagation axis of the cathode total beam output. As shown in Fig. 4a, the cathode is placed in the electron hole at the entrance of the first electrode G3 of the focusing lens. The wide aperture of the first focusing electrode makes it possible to use a cathode 23 having an emission portion having a diameter close to that of G3. It is known that there is no interaction between the two electrostatic lenses in electronic grabbing, and the distance between the two must be at least 1.5 times larger than the maximum diameter of the two lenses. In the cathode-ray tube electron pick-up ', the maximum diameter of the focal lens is about 5 mm. Therefore, according to the cathode of the present invention, its diameter may be 1 mm. In order to have the same beam conditions as the conventional structure incorporating a hot cathode, that is, when the current is 5 m A, the wave -10- 594825

(6) 束在透鏡入口處有一與傳播軸成3。及5。之擴散角ae。為達 此目的,陰極23被置於距聚焦透鏡7-10 mm之處,結果,電 _ 子搶被縮短約20-23 mm,在電子搶總長約8〇 mm之下,此 · 為大幅縮短。。 圖4d說明引進發射陰極一像散波束之方法,像散現象意 - 在補償偏轉場引起之像散。為此,陰極2 3之發射表面在切 割平面中為具有曲率半徑之曲線,平面包括傳播軸Z,其並 非恒定。因此,圖4d說明之實施例中,發射表面之垂直取 φ 率半徑Ry大於水平取率半徑。因此,陰極發射之波束在 , 水平方向較垂直方向更為發散。此實施例不構成限制, 可選擇為大於Ry,因為必須補償之像散為主聚焦透鏡所引 進及/或磁偏轉場所引進。 在本發明第二實施例中,如圖5a-5d所說明,場發射陰極 53有一貫際上平面之發射表面。每一主要發射區有一不對 稱結構,以便發射之微波束2〇之軸26與陰極53輸出之波束 32之傳播軸成一角度αη;角度心視陰極表面上微發射體12 之位置而定,以陰極53週圍之最大值〜而言,其較佳隨微 · 發射體與Z軸之距離線性增加。一旦陰極被置於第一聚焦電 極G3之孔隙中,微波束20似乎自稱為,,虛交叉”之同一虛像 區40發散,並位於陰極之後,及自電極G3與G4電極構成 之聚焦透鏡之對面側。 如圖5c及5d說明’使波束之方向在預定方向之不對稱可 由將擷取電場或準直電場空間上不對稱一偏移54於主發射 區之發射元件12與準直電極2 1之孔隙5 5之中心,此偏移量 -11- 594825(6) The beam has a 3 at the entrance of the lens and a propagation axis. And 5. Of diffusion angle ae. To achieve this, the cathode 23 is placed 7-10 mm away from the focusing lens. As a result, the electrons are shortened by about 20-23 mm, and the total length of the electrons is about 80 mm. . . Figure 4d illustrates the method of introducing an astigmatic beam of transmitting cathodes. The astigmatism phenomenon is intended to compensate for the astigmatism caused by the deflection field. For this reason, the emission surface of the cathode 23 is a curve with a radius of curvature in the cutting plane, and the plane includes the propagation axis Z, which is not constant. Therefore, in the embodiment illustrated in Fig. 4d, the vertical radii φ of the emission surface is larger than the horizontal radii of the ratio. Therefore, the beam emitted by the cathode is more divergent in the horizontal direction than in the vertical direction. This embodiment does not constitute a limitation, and may be selected to be larger than Ry, because the astigmatism that must be compensated is introduced by the main focus lens and / or the magnetic deflection site is introduced. In the second embodiment of the present invention, as illustrated in Figs. 5a-5d, the field emission cathode 53 has an emission surface with a substantially upper plane. Each main emission area has an asymmetric structure so that the axis 26 of the emitted microbeam 20 and the propagation axis of the beam 32 output from the cathode 53 form an angle αη; the angle depends on the position of the microemitter 12 on the surface of the cathode. In terms of the maximum value around the cathode 53, it preferably increases linearly with the distance between the micro-emitter and the Z axis. Once the cathode is placed in the aperture of the first focusing electrode G3, the microbeam 20 seems to call itself, the same virtual image area 40 of "virtual cross" diverges, is located behind the cathode, and opposite to the focusing lens formed by the electrodes G3 and G4 electrodes As shown in Figs. 5c and 5d, the asymmetry of the beam direction in a predetermined direction can be achieved by shifting the asymmetry of the captured electric field or the collimated electric field into a space 54 of the transmitting element 12 and the collimating electrode 2 1 in the main emission area. The center of pore 5 5 this offset -11- 594825

⑺ 較佳隨微發射體與傳播軸z間距離而線性增加。使擷取及準, . 直電極之孔隙同軸及使其與發射元件12之發射點偏移亦屬 可行。陰極建立之波束像散係由偏移54之變化率產生,其 _ 隨微發射體之位置而不同。因此如圖5d所說明,位於自陰 極53中心〇相等距離之微發射體12與孔隙55之中心偏移之 較大或較小程度,係根據其位於垂直軸γ或水平軸X而定。 在圖5d之情形下,自陰極中心等距離之事實,微發射體被 偏移一值54x,其在水平方向較在垂直方向之值54y為小, · 將使波束在垂直方向較水平方向更為發散。 — 本發明有另一優點,係導致於一事實,即冷發射微發射 體能產生一陰極,其較熱陰極之發射電流值較少敏感。此 係因為在後一型式陰極之下,發射區隨發射電流而增加, 及波束之尺寸亦修改波束之像散,及此一像散與偏轉場像 散引起之效應間之折衷。在冷發射發射體陰極情狀下,發 射表面不隨發射電流變化,及實施本發明可避免必須使用 額外裝置,因其用以根據電流控制波束之像散複雜而價昂。 如僅為控制微發射體發射之波束之像散,而不考慮電子 · 搶之長度,本發明之實施可保證區域40為實在,因此,波 束在垂直及水平方向之收斂點位於陰極與主聚焦電極之間 。此等於在第一實施例情形下使陰極之發射表面與圖牝說 明之相反方向中為曲線。同理,在第二實施例情形下,向 陰極中心〇·之偏移54可使微波束收斂於陰極與聚焦透鏡之 間。 本發明不限於製造一微發射體為上述之微尖之陰極。反 ' -12- 594825⑺ It is preferable to increase linearly with the distance between the micro-emitter and the propagation axis z. It is also feasible to make the acquisition and alignment, coaxial with the aperture of the straight electrode and offset it from the emission point of the emission element 12. The beam astigmatism created by the cathode is generated by the rate of change of the offset 54, which _ varies with the position of the micro-emitter. Therefore, as illustrated in Fig. 5d, the degree of deviation of the micro-emitter 12 and the center of the aperture 55 located at an equal distance from the center of the cathode 53 depends on whether it is located on the vertical axis γ or the horizontal axis X. In the case of Figure 5d, the fact that the micro-emitter is offset by a value of 54x from the center of the cathode, which is smaller in the horizontal direction than the value 54y in the vertical direction, will make the beam more vertical in the horizontal direction than in the horizontal direction. For divergence. — The present invention has another advantage due to the fact that a cold-emitting micro-emitter can produce a cathode that is less sensitive to the emission current value of a hot cathode. This is because under the latter type of cathode, the emission area increases with the emission current, and the size of the beam also modifies the astigmatism of the beam, and the compromise between this astigmatism and the effect caused by the deflection field astigmatism. In the case of a cold-emitting emitter cathode, the emission surface does not change with the emission current, and the implementation of the present invention can avoid the need to use additional devices because it is complex and expensive to control the astigmatism of the beam based on the current. If only the astigmatism of the beam emitted by the micro-emitter is controlled, regardless of the length of the electron and grab, the implementation of the present invention can ensure that the area 40 is real. Therefore, the convergence point of the beam in the vertical and horizontal directions is located at the cathode and the main focus. Between the electrodes. This is equivalent to making the emission surface of the cathode in the case of the first embodiment a curve in a direction opposite to that illustrated in FIG. Similarly, in the case of the second embodiment, the offset 54 of the center of the cathode 54 may cause the microbeam to converge between the cathode and the focusing lens. The invention is not limited to the fabrication of a micro-emitter cathode having the above-mentioned microtip. Anti '-12- 594825

(8) 之,其可以相似方式使用,及具有場效微發射體各方面之 優點,特別是碳基平面微發射體。 本發明在所有實施例中之陰極是否應用在單色管單波束 電子搶或下標型彩色管電子搶或彩色管之三束電子搶。 圖式代表符號說明 G1 第一控制電極 G2 擷取電極 G3 聚焦電極 G4 電極 K 陰極 D 總長度 32 全波束 2 基板 5 陰極導體 7 電阻層 8 絕緣層 10 擷取電極 12 微尖 20 電子微波束 23 圓形陰極 26 微波束 40 虛像區域 32 波束 24 絕緣層(8) Among other things, it can be used in a similar way and has the advantages of all aspects of field-effect microemitters, especially carbon-based planar microemitters. Whether the cathode of the present invention in all embodiments is applied to a single-beam single-tube electronic grabbing or a subscript color tube electronic grabbing or a three-beam electronic grabbing of a color tube. Description of symbols in the figure G1 First control electrode G2 Capture electrode G3 Focusing electrode G4 Electrode K Cathode D Total length 32 Full beam 2 Substrate 5 Cathode conductor 7 Resistor layer 8 Insulation layer 10 Extraction electrode 12 Microtip 20 Electronic microbeam 23 Circular cathode 26 Microbeam 40 Virtual image area 32 Beam 24 Insulation

-13- 594825 (9) 53 場發射陰極 54 偏移 55 孔隙 22 減速電極-13- 594825 (9) 53 field emission cathode 54 offset 55 aperture 22 deceleration electrode

-14--14-

Claims (1)

594825 第091136649號專利申請案 中文申請專利範圍替換本(93年1月) 拾、申請專利範圍 1, 一種用於陰極射線管之電子搶,包含: 一第一偏壓電極,亦稱陰極導體, 至少一冷發射微發射體陣列,其被置於該陰極導體之 上"亥專祕發射體被電連接至該陰極導體,並且用於發 射由數個電子微波束所組成之電子束, 擷取電極,其被置於陰極導體之上,並由微發射體 上之孔隙所穿過, a -準直電極’用以縮小該等微波束之發射角,該電子 槍進一步包含至少一聚焦電極, 其特徵為該電子搶包括—收叙裝置,用以使微波束收 斂於-區域’其方式為由該等微波束組成之電子束在垂 =平方向收斂在此區域中之二獨立且實質上似點 狀£域Ox及〇y上。 2.594825 Patent Application No. 091136649 Chinese Application for Patent Scope Replacement (January 1993) Pick up and apply for Patent Scope 1, an electronic grab for a cathode ray tube, including: a first bias electrode, also known as a cathode conductor, At least one cold-emitting micro-emitter array, which is placed on the cathode conductor. The "Hei Secret emitter" is electrically connected to the cathode conductor and is used to emit an electron beam composed of several electron microbeams. Take an electrode, which is placed on the cathode conductor and penetrated by the pores on the micro-emitter, a-collimating electrode 'is used to reduce the emission angle of these micro-beams, the electron gun further comprises at least a focusing electrode, It is characterized in that the electronic grab includes a narrative device for converging the microbeams in the -area '. The way is that the electron beams composed of these microbeams converge in the vertical = horizontal direction. Two independent and substantial Looks like dots on the fields Ox and Oy. 2. 如申請專利範圍第丨項之電子搶,其特徵為該收敛裝置For example, the electronic grab of the scope of patent application is characterized by the convergence device ^該等微波束收斂在位於陰極上方之—虛像區 電極之相對側上。 μ 3· 4. 5. 如申請專利範圍第丨項之電子搶,其特 係藉由陰極之發射部件為曲線表面並在水平直 向有一各別曲率半徑之事實所達成。 :申請專利範圍第i項之電子搶,其特 束=斂之該收斂裝置包含_用以在該等微波束區 之電場内建立一空間不對稱的裝置。 °σ 如申請專利範圍第4項之電子搶,其特徵為^ The microbeams converge on the opposite side of the virtual image area electrode, which is located above the cathode. μ 3 · 4. 5. In the case of the patent application, the electron grab is achieved by the fact that the emitting part of the cathode is a curved surface and has a respective radius of curvature in the horizontal direction. : The electronic grab of item i in the scope of patent application, its feature = convergence. The convergence device includes a device for establishing a spatial asymmetry in the electric field in the microbeam regions. ° σ If the electronic grab of item 4 of the patent application scope is characterized by 申請專利範園續頁 笔場中建立不對摇夕姑班 ^ ,% 裝置之達成係藉由一尹i嵌士 k / 或準直電極且古知似上 彌取電極及/ 电枉具有相對於微發射體之 電極平面中_太A 4 1糸偏移之事實,及 方向之偏移值之變化率 另一古夂丨ϋ午不问於同一平面 σ之偏移之變化率不同之事實。 如申請專利範圍第5項之電 極之中心鉍夕π私丄 /、特徵為偏移隨自陰 ψ 軸之距離成線性變化。 其特徵為該陰極係置 其特徵為該電子搶具 如申請專利範圍第1項之電子搶 於該第一聚焦電極之入口。 種包含一電子搶之陰極射線管 有: 一第一偏壓電極,亦稱陰極導體, 至少一冷發射微發射體陣列,其被置於該陰極導體之 上,該等微發射體被電連接至該陰極導體,並且用於發 射由數個電子微波束所組成之電子束, 一擷取電極,其被置於陰極導體之上,並由微發射體 上之孔隙所穿過, 準直電極,用以縮小該等微波束之發射角,該電子 搶進一步包含至少一聚焦電極, 其特徵為該電子搶包括一收傲裝置,用以使微波束收 敛於一區域,其方式為由該等微波束組成之電子束在垂 直及水平方向收斂在此區域中之二獨立且實質上似點 狀區域Οχ及〇y上。The application of the patent for the Fanyuan continuation page to establish the wrong place in the pen field ^,% device is achieved by a Yin i embedded k / or collimation electrode and the ancient seemingly upper electrode and / In the electrode plane of the micro-emitter, the fact that __A 4 1 _ is offset, and the rate of change of the offset value of the direction is another question, regardless of the fact that the change rate of the offset of the same plane σ is different. For example, the center of the electrode in the scope of patent application No. 5 is bismuth, and the characteristic is that the offset changes linearly with the distance from the ψ axis. It is characterized in that the cathode system is characterized in that the electron grabbing device, such as the first item in the patent application scope, is grabbed at the entrance of the first focusing electrode. A cathode ray tube including an electron grab is: a first bias electrode, also called a cathode conductor, at least one cold-emitting micro-emitter array, which is placed on the cathode conductor, and the micro-emitters are electrically connected To the cathode conductor, and used to emit an electron beam composed of several electron microbeams, an extraction electrode is placed on the cathode conductor and passed through a hole in the microemitter to collimate the electrode To reduce the emission angle of the microbeams, the electronic grab further includes at least one focusing electrode, which is characterized in that the electronic grab includes a receiving device for converging the microbeam to an area by means of The electron beam composed of the microbeams converges on two independent and substantially point-like regions 0χ and 0y in this region in the vertical and horizontal directions.
TW91136649A 2001-12-19 2002-12-19 Electron gun for cathode ray tubes TW594825B (en)

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