TW591837B - Surge absorber for single-layer three-phase application and manufacturing method thereof - Google Patents
Surge absorber for single-layer three-phase application and manufacturing method thereof Download PDFInfo
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591837591837
—、L元IT技術J—, L yuan IT technology J
請參照圖1,其繪示一 f知突波吸收器之上視圖及 視圖。如圖所示,習知突波吸收器包括:—氧化辞J ,其上下兩面各有一導電層7,並於電極面7上焊上 (一般為鍍錫銅線)8,並於外層塗覆環氧樹脂粉末,作、、、 絕緣及防潮之作用,其工作原理為:利用氧化鋅陶瓷片^ 之晶界現象,對兩端發生之瞬間過電壓進行保護,並將 波能量以熱的方式來解除,所以其工作時,必須產生電] 流經氧化辞陶瓷片6本體,方能將突波能量轉成熱的形^ 式。 請參照圖2,其繪示一習知使用突波吸收器來保護 L - N - G二線電源之示意圖。如圖所示’傳統上使用突波吸 收器來保護L - N _ G三線電源,對於發生在L - N - G間之瞬間過 電壓(突波能量),通常是需要三個獨立的突波吸收器9才 丨_ 能完整保護,其中,每一個突波吸收器9獨立完成兩線間 之保護。 請分別參照圖3 ( a) (b)及(c),其繪示日本第5 9 - 5 6 0 1 號專利之三端子單層元件之示意圖。其中,圖3(a)為其上Please refer to FIG. 1, which shows a top view and a view of a known surge absorber. As shown in the figure, the conventional surge absorber includes:-an oxide J, which has a conductive layer 7 on each of the upper and lower sides, and is welded on the electrode surface 7 (generally tin-plated copper wire) 8 and is coated on the outer layer Epoxy powder is used for insulation, insulation, and moisture resistance. Its working principle is to use the grain boundary phenomenon of the zinc oxide ceramic sheet ^ to protect the instantaneous overvoltage that occurs at both ends, and use the wave energy in a thermal manner. It is necessary to generate electricity when it works, and it must flow through the body of the ceramic chip 6 to convert the surge energy into a heat form. Please refer to FIG. 2, which shows a schematic diagram of a conventional use of a surge absorber to protect the L-N-G two-wire power supply. As shown in the figure 'Traditionally, a surge absorber is used to protect the L-N_G three-wire power supply. For instantaneous overvoltage (surge energy) between L-N-G, three independent surges are usually required. The absorber 9 can be completely protected, in which each surge absorber 9 independently completes the protection between the two lines. Please refer to Fig. 3 (a) (b) and (c) respectively, which show schematic diagrams of the three-terminal single-layer component of Japanese Patent No. 5-9-5601. Among them, Figure 3 (a) is
第5頁 591837Page 5 591837
視圖,圖3(b)為其 如圖所示,日本5 9 計了三端子單層元 單層元件1 00具有j 中即可看出此種方 當保護,因d到e間 以即使d對e可在適 波能量藉熱的方式 並無等效突波吸收 不完備。 側視圖,而圖3 ( c)則盔甘# % _ 則為其等效電路圖。 : 為了簡化線路之目的而設 件100。雖然從外觀上看起來該三端子 i個端子d、e及f,但從等效電路圖3(c) 式只保護了 d-f及e_f,而d_e間並無適 並無貫質的體積(晶界)可供其穿越,所 當的電場下產生崩潰現象,卻無法把突 解除,所以d對e在等效電路圖3(c)中, 器存在,故就保護觀點而言,其設計並 δ月分別參照圖4(a)及(b),其繪示中華民國第313713 號專利之三端子單層元件之示意圖。其中,圖4(a)為其上 視圖’而圖4(b)為其側視圖。如圖所示,中華民國第 3 1 3 71 3號專利係針對圖3中未保護到之部份加以改良而設 計之三端子單層元件丨2〇。從外觀上看起來該三端子單層 元件120具有三個端子g、h及k,但由圖4(a)及(b)中可 知’當每次異常電壓來臨而啟動時,必須由上面電極1 2 1 之端子g(假設)對另一面電極123先作崩潰動作(亦即產生 電流),再由電極123對電極122之端子h或電極123之端子k 作第二次崩潰動作(亦即產生電流)才算完成,所以每次進 行保護時都需要通過陶瓷本體兩次,亦即必須使用原設計 之單次使用面積(121、122及123)的兩次(兩倍)(121加122 或1 2 2加1 2 3或1 2 1加1 2 3 )才能完成其保護功能,不僅使其 可靠度降低,而且在相同雷擊能量侵入條件下,因其等效View, Figure 3 (b) is as shown in the figure. Japan 5 9 counts the three-terminal single-layer element and single-layer element 100. It can be seen that this type of protection is due to the fact that between d and e, even d There is no equivalent incomplete surge absorption for the way that e can borrow heat at the appropriate wave energy. Side view, and Figure 3 (c) is helmet equivalent #% _ is its equivalent circuit diagram. : Set 100 for the purpose of simplifying the wiring. Although the three terminals i, d, e, and f appear from the external appearance, only the df and e_f are protected by the equivalent circuit diagram 3 (c), and there is no suitable and inconsistent volume between d_e (grain boundary ) Can pass through it, the collapse phenomenon occurs under the appropriate electric field, but the burst cannot be released, so d vs. e exists in the equivalent circuit in Figure 3 (c). Therefore, from the perspective of protection, its design and δ month Referring to Figures 4 (a) and (b) respectively, it shows a schematic diagram of a three-terminal single-layer component of the Republic of China Patent No. 313713. Among them, Fig. 4 (a) is its top view 'and Fig. 4 (b) is its side view. As shown in the figure, the Republic of China Patent No. 3 1 3 71 3 is a three-terminal single-layer component designed to improve the unprotected part in FIG. 3. From the appearance, the three-terminal single-layer element 120 has three terminals g, h, and k, but it can be known from Figs. 4 (a) and (b) that when the abnormal voltage comes and starts, the upper electrode must be used. 1 2 1 The terminal g (assumed) first makes a collapse action (that is, generates a current) on the other electrode 123, and then the second collapse action is performed by the electrode 123 to the terminal h of the electrode 122 or the terminal k of the electrode 123 (that is, Generation of current) is considered complete, so you need to pass the ceramic body twice for each protection, that is, you must use the original design of the single-use area (121, 122, and 123) twice (double) (121 plus 122) Or 1 2 2 plus 1 2 3 or 1 2 1 plus 1 2 3) in order to complete its protection function, which not only reduces its reliability, but also under the same lightning energy intrusion conditions, because it is equivalent
591837 五、發明說明(3) 面積只有原設計的1 / 2,故其耐受能離必遠小於三個獨立 (工作面積等同1 2 1或1 2 2或1 2 3 )的突波吸收器。 因此,本發明係提供一種單層三相用突波吸收器及其 製造方法,其可於單層氧化鋅陶瓷體上設計出可同時完成 L-N-G三線間保護,並能真正利用單次崩潰進行保護,使 得壽命及信賴度提高之單層三相用突波吸收器及其製造方 法。 三、【發明内容】 本發明之第一目的係提供一種單層三相用突波吸收器 及其製造方法,其可於單層氧化鋅陶瓷體上設計出可同時 完成L-N-G三線間保護,並能真正利用單次崩潰進行保 護,使得壽命及信賴度提高之單層三相用突波吸收器及其 製造方法。 本發明之第二目的係提供一種單層三相用突波吸收器 及其製造方法,其利用增加的内部線路,解決一般在單層 陶瓷片上要設計出三個獨立工作的突波吸收器時,必須使 用兩次崩潰路徑,才能解決一次突波攻擊的缺點,使得本 發明之有效工作面積是習知使用兩次崩潰路徑設計者之兩 倍,以達到節省成本之目的。 本發明之第三目的係提供一種單層三相用突波吸收器 及其製造方法,其只需適當地調整面積即可達到兩顆、三 顆或多顆突波吸收器並聯之效果,而且同時解決不同突波 吸收器(對應不同崩潰電壓)並連在相同的兩線之間,突波 攻擊時不會同時啟動之事實;而且不同突波吸收器在先後591837 V. Description of the invention (3) The area is only 1/2 of the original design, so its tolerance can be far less than three independent surge absorbers (the working area is equivalent to 1 2 1 or 1 2 2 or 1 2 3) . Therefore, the present invention provides a single-layer three-phase surge absorber and a method for manufacturing the same, which can be designed on a single-layer zinc oxide ceramic body to complete the protection between the three lines of LNG at the same time. A single-layer three-phase surge absorber that improves life and reliability and a method for manufacturing the same. 3. [Content of the Invention] The first object of the present invention is to provide a single-layer three-phase surge absorber and a method for manufacturing the same, which can be designed on a single-layer zinc oxide ceramic body and can simultaneously complete three-line protection of LNG, and Single-layer three-phase surge absorber capable of truly utilizing a single crash for protection and improving life and reliability, and a manufacturing method thereof. A second object of the present invention is to provide a single-layer three-phase surge absorber and a method for manufacturing the same. The method uses an increased internal circuit to solve the problem of designing three independent surge absorbers on a single-layer ceramic sheet. It is necessary to use two crash paths to solve the shortcomings of a surge attack, so that the effective working area of the present invention is twice that of a designer who uses the two crash paths, to achieve the purpose of cost savings. A third object of the present invention is to provide a single-layer three-phase surge absorber and a manufacturing method thereof, which can achieve the effect of connecting two, three or more surge absorbers in parallel by appropriately adjusting the area, and Simultaneously resolve the fact that different surge absorbers (corresponding to different crash voltages) are connected between the same two lines, and the surge will not start at the same time when the surge is attacked; and different surge absorbers are in order
五 、發明說明(4) 啟動時,田I y 突波吸收考膝13突波吸收15之殘留阻抗不$,則低阻抗之 來,對此=承受較大之電流(因相互並聯),長時間下 致單顆突$::及收益而'r ’劣化狀況會較嚴重,若最終導 本;=器失效,則將失去多顆並聯之目的。 对1 <弟四目的係為解決值 問題,而兩m 7 W成得統上突波吸收器之失效 法,可減U別突波吸收器進行外加過溫保護元件的方 、准持合理的仅嗜 進而降低成本,但仍可 j你瘦功能。 於突的係為提供較佳之散熱解決方案,由 的形能量的方式,㈤是利用產生焦耳熱 突波吸收;:ί;;力:於產熱速度,則造成温升,會使 然任兩線;,:\甚至造成燒毀,而在本發明中,雖 發明之二:Γ 所以若是對相同突波能量而言,本 體表面突波吸收器其溫升必較小,…於整 密集之突ί ί雜?散熱能力亦增加許多,目此,對連續且 可信賴性'/’將有更強之保護能力,以提高其壽命及 收哭為ΐΐΐ目ϋ,本#明係提供一種單層三才目$突波吸 置I —,、匕括.早層氧化鋅陶瓷體;第一電極層,置於該 鋅陶究體之一表面Λ ’其上具有彼此分離之第一 有笔一 ί 一電f,且於該第一電極及該第二電極上分別具 陶ί體及Ϊ二端子;第二電極層’置於該單層氧化鋅 充體之另一表面上,其上具有彼此分離之第三電極及第V. Description of the invention (4) At the start, the residual impedance of Tian I y surge absorption test 13 knee absorption 15 is not $, then the low impedance comes, for this = to bear a large current (because of parallel connection), long Under time, it will cause a single burst of $ :: and gain and the 'r' deterioration will be more serious. If the final guide is lost, the purpose of multiple parallel connections will be lost. For 1 < four purposes is to solve the value problem, and two m 7 W is a failure method of the surge absorber, which can reduce the U and other surge absorbers to add over-temperature protection components. The only addiction is to reduce costs, but you can still lose weight. In order to provide a better heat dissipation solution, the method of forming energy is to absorb the Joule heat surge by using the form of energy; 力 ;; Force: At the rate of heat production, it will cause a temperature rise, which will cause any two lines. ;,: \ Even caused burnout, but in the present invention, although the second invention: Γ So for the same surge energy, the temperature rise of the body surface surge absorber must be small, ... ί Miscellaneous? The heat dissipation capacity has also increased a lot. For this reason, the continuous and trustworthy '/' will have a stronger protection ability, in order to improve its life span and crying. For this reason, this # 明 系 provides a single layer of three talents. Wave absorption I — ,, dagger. Early layer of zinc oxide ceramic body; a first electrode layer, placed on one surface of the zinc ceramic body A ceramic body and a second terminal are respectively provided on the first electrode and the second electrode; a second electrode layer is placed on the other surface of the single-layer zinc oxide body, and a third electrode layer is separated from the third electrode layer; Electrode and Cap
第8頁 591837 五、發明說明(5) 四電極,且於該第四電極上具有 路,麵接於該第一電極及兮第_ : 以及導電通 及該第三電極形成導電第二電極之間’使該第-電極 為達上述目的,本發明亦 一 一 =之製造方法’其包括下列步驟用突波吸 上極層置於該單層氧化鋅陶 /、 有彼此分離之一第一電極及一第_表面 該電第上分別具有-第- *上,且該第:電極;:::=”辞陶究體之另-表 二第四電極,且於該第四電& “二刀•之一第三電極及 =電通路連接於該第—電極及該:知子,以及使 ::及該第三電極形成導電通:。-電極之間,使該 及其目的,:ξ ί j,—步瞭解本創作之結構、特徵 后。紋附以圖式及較佳具體實施例之詳細說明如 四」實施方式】 ;;明‘ 2 例(二層(ci二〇二其分別繪示根據本 :發==::=圖::二 -電極層2 ;導電通路1 及收為包括:第-電極層1 ;第 成。 V電通路3 ’以及單層氧化鋅陶兗體4所組 、中,該單層氧化鋅陶瓷體4 ’其功能如同習知突波 麗 591837 五、發明說明(6) 吸收器中之氧化鋅陶瓷體6,係用以提供該突波吸 潰路徑;第一電極層丨,係置於該單層氧化鋅陶瓷=器崩 表面(圖未示)上,其上具有彼此分離之第一電極“ 4之〜 電極12,且於該第一電極η及該第二電極a上分別及第二 一端子a及第二端子b ;第二電極層2,係置於該單/有苐 鋅陶究體4之另一表面(圖未示)上,其上具有彼此又虱化 第三電極21及第四電極22,且於該第四電極22上具^離之 端子c ;以及導電通路3,耦接於該第一電極丨丨及^,第三 極21之間,使該第一電極1丨及該第三電極21形成‘第二電 路。其中、,該第一電極層1及該第二電極層2係由銀】通 成,而该導電通路3則較佳係為一金屬或導電塗覆 > 所製 以便將第一電極11及該第三電極2 1導通。 、、略’P.8 591837 V. Description of the invention (5) Four electrodes, and there is a path on the fourth electrode, and the surface is connected to the first electrode and the first electrode: and the conductive via and the third electrode form a conductive second electrode In order to make the first electrode achieve the above-mentioned object, the present invention also includes a method for manufacturing the first electrode, which includes the following steps: absorbing the upper electrode layer with a surge, and placing the single layer on the single-layer zinc oxide ceramic; The electrode and the first surface have the -th- * on the top, and the first: electrode; :: = ", the second electrode of Table II and the fourth electrode, and the fourth electrode & "Two blades, one of the third electrode and an electrical path are connected to the first electrode and the: zhizi, and make the :: and the third electrode conductive. -Between the electrodes, make this and its purpose: ξ ί j,-after understanding the structure and characteristics of this creation. Figures and detailed descriptions of the preferred embodiments are described in detail in the "four implementations";; Ming '2 cases (two layers (ci 202) which are shown according to this: hair == :: = figure :: The two-electrode layer 2; the conductive path 1 and the collector include: the first-electrode layer 1; the first component. The V electrical path 3 'and the single-layer zinc oxide ceramic body 4 are composed of the single-layer zinc oxide ceramic body 4 'Its function is similar to the conventional Tupolei 591837. 5. Description of the invention (6) The zinc oxide ceramic body 6 in the absorber is used to provide the surge absorption path; the first electrode layer 丨 is placed in the single layer Zinc oxide ceramics = On the surface of the device (not shown), there are first electrodes "4 to ~ 12" separated from each other, and the first electrode η and the second electrode a and the second one terminal respectively a and the second terminal b; the second electrode layer 2 is placed on the other surface (not shown) of the single / arsenic zinc ceramic body 4 and has a third electrode 21 and a third electrode thereon. The four electrodes 22 have a terminal c on the fourth electrode 22; and a conductive path 3 is coupled between the first electrode 丨 and the third electrode 21, so that the first electrode 1丨 and the third electrode 21 form a 'second circuit. Among them, the first electrode layer 1 and the second electrode layer 2 are made of silver], and the conductive path 3 is preferably a metal or conductive Coating > made so as to conduct the first electrode 11 and the third electrode 2 1.
請參照圖5(d),其中,當該第一端子8對該第二山 兩端有異常電壓發生時,則以該第一電極丨丨為基準端子c 域便啟動,使電流貫穿於該第一電極層1與該第二工作區 之間,以發熱解除突波能量;當該第一端子3對^2 子b兩端有異常電壓發生時,則以該第三電極2 1為基準& 作區域便啟動,使電流貫穿於該第一電極層1與該第二= 極層2之間,以發熱解除突波能量;而當該第三端子c對該 第二端子b兩端有異常電壓發生時,則以該第二電極丨2與 該第四電極22上下垂直重疊部分面積之一區域22,為基準 工作區域便啟動’使電流貫穿於該區域2 2 ’之上下表面 間,以發熱解除突波能量。如上所述,本發明之單層三相 用突波吸收器可同時保護三線間之異常狀況,而且每次保Please refer to FIG. 5 (d). When an abnormal voltage occurs between the first terminal 8 and the second mountain, the c-field is started with the first electrode 丨 as a reference terminal, so that current flows through the Between the first electrode layer 1 and the second working area, the surge energy is released by heating; when an abnormal voltage occurs across the first terminal 3 and the second b, the third electrode 21 is used as a reference & The operation region is started, so that a current flows between the first electrode layer 1 and the second electrode layer 2 to release the surge energy by heating; and when the third terminal c is at both ends of the second terminal b When an abnormal voltage occurs, an area 22, which is an area vertically overlapping the second electrode 丨 2 and the fourth electrode 22, is used as a reference working area to start 'allow current to flow between the upper and lower surfaces of the area 2 2'. To release the surge energy by heating. As described above, the single-layer three-phase surge absorber of the present invention can simultaneously protect abnormal conditions between the three wires, and
第10頁 591837 五、發明說明(7) 護動作的完成,僅需一次崩潰動作,啟動保護後所產生之 熱’可藉由整個體積(表面積)來完成散熱,使突波電流流 矣生之區域減半,以增加壽命及信賴度。 请參照圖6,其繪示根據本發明之另一較佳實施例之 單層二相用突波吸收器之示意圖。如圖5(b)所示,該單層 三相用突波吸收器係於該第四電極22處外接一第三端子/ j連接至三相電路。然實際應用上可如圖6所示,可將^ 單層三相用突波吸收器之第四電極22分成兩個彼此互相隔 離之區域221及222,且於區域221及222分別外接端子c,及 c’ ’,然後再使用導線w連結區域221及222,如此,對1,及 c’ ’而言,是處於同電位,則其功能等同於圖5(b)中之第 四電極2 2與第三端子c之功能,因此,雖然圖6之外觀不同 於本發明5 (b )之外觀(引線數目不同),但實降卜甘丄 Η μ丨不上,其功能 疋一樣的。 請參照圖7 ( a ),其繪示根據本發明之另一較佳實施例 之單層三相用突波吸收器之示意圖。如圖5 ( c)所示具該單 層三相用突波吸收器係藉由該導電通路3耦接於該第一°電 極11及該第三電極2 1之間,使該第一電極11及該第二電極 2 1形成導電通路而具有相同電位。然實際應用上可如园/ 所示,可於該單層三相用突波吸收器之第三電極2丨處^卜接 一第二端子b,再於該第一電極11處外接一第四端子^,, 因該導電通路3連通之故,使該第二端子b與第^,本 〃木四端子c,處 之電位相同,雖然圖7 (a)之外觀不同於本發明5 ( c )之外觀 (引線數目不同),但實際上,其功能是一樣的。 主 βPage 10 591837 V. Description of the invention (7) The completion of the protection action requires only one collapse action. The heat generated after the protection is activated can be dissipated through the entire volume (surface area), and the surge current can be generated. Area is halved to increase life and reliability. Please refer to FIG. 6, which illustrates a schematic diagram of a single-layer two-phase surge absorber according to another preferred embodiment of the present invention. As shown in FIG. 5 (b), the single-layer three-phase surge absorber is connected to a third terminal / j at the fourth electrode 22 and connected to a three-phase circuit. However, as shown in FIG. 6, the fourth electrode 22 of the single-layer three-phase surge absorber can be divided into two regions 221 and 222 that are isolated from each other, and the terminals 221 and 222 are respectively connected to the terminal c. , And c '', and then use wires w to connect the regions 221 and 222. In this way, for 1, and c '' at the same potential, its function is equivalent to the fourth electrode 2 in Fig. 5 (b) The functions of 2 and the third terminal c are different. Therefore, although the appearance of FIG. 6 is different from the appearance of 5 (b) of the present invention (the number of leads is different), the actual function is not the same. Please refer to FIG. 7 (a), which illustrates a schematic diagram of a single-layer three-phase surge absorber according to another preferred embodiment of the present invention. As shown in FIG. 5 (c), the single-phase three-phase surge absorber is coupled between the first electrode 11 and the third electrode 21 through the conductive path 3 so that the first electrode 11 and the second electrode 21 form a conductive path and have the same potential. However, in practical applications, as shown in the figure, a second terminal b can be connected to the third electrode 2 of the single-layer three-phase surge absorber, and then a first terminal 11 can be connected to the first electrode 11 The four terminals ^, because the conductive path 3 communicates, makes the second terminal b and the ^, the four terminals c of this Tochigi the same potential, although the appearance of Figure 7 (a) is different from the invention 5 ( c) The appearance (the number of leads is different), but in fact, its function is the same. Main β
第11頁 591837 五、發明說明(8) 疆17(b),本發明之單層三相用突波吸收器其第一電極u及 該第三電極21之間亦可不使用該導電通路3,而是如圖 7(b)所示使用一導線3’外接於第二端子b與第四端子c, 間,使戎第一電極11及该第三電極21之電位相同,可達 多顆突波吸收器並聯之功效者。 、此外’本發明亦提供-種單層三相用突波吸收器之製 :方法’其包括下列步驟·· *供一單層氧化鋅陶瓷體4 (步 驟1) ·’將第-電極層i置於該單層氧化鋅陶甍體4之一表面 j ’其上具有彼此分離之第一電極11及第二電極η,且於 该第-電極11及該第二電極12上分別具有第一端子a及第、 ^端子b(一步本驟2);將第二電極層2置於該單層氧化鋅陶莞 第一之另、面> 上’且'亥第二電極層2上亦具有彼此分離之 匕C = 極22,且於該第四電極22上具有第」 π:(! 2,以及使用一導電通路3連接於該第-電極 开4 = ί::極22之間,使該第一電極11及該第三電極22 形成導電通路(步驟4)。 ^ ^ ^ 其中/步驟2中之該第一電極層1及步驟3中之該第二 佳^ -係金由屬銀膠所製成’而步驟4中之該導電通路3則較 三:電塗覆線路,以便將第-電極11及該第 器之製造方法所Ξ:之=本f明之單層三相用突波吸收 端成之早層二相用突波吸收器,當該第一 ^子a對遠第二端子c兩端有異常 電極"為基準工作區域便啟 層1與該第二電極芦2之巧,以二,貝穿於遠第-電極 炫層2之間以發熱解除突波能量;當該第Page 11 591837 V. Description of the invention (8) Xinjiang 17 (b), the single-layer three-phase surge absorber of the present invention may not use the conductive path 3 between the first electrode u and the third electrode 21, Instead, as shown in FIG. 7 (b), a wire 3 'is used to connect between the second terminal b and the fourth terminal c, so that the potentials of the first electrode 11 and the third electrode 21 are the same, and multiple protrusions can be reached. The effect of parallel wave absorber. In addition, the present invention also provides a method of manufacturing a single-layer three-phase surge absorber: a method, which includes the following steps: * For a single-layer zinc oxide ceramic body 4 (step 1) i is placed on one surface of the single-layer zinc oxide ceramic body 4 and has a first electrode 11 and a second electrode η separated from each other, and has a first electrode 11 and a second electrode 12 on the second electrode 12, respectively. One terminal a and the second terminal b (step 2 of this step); the second electrode layer 2 is placed on the first layer of the single-layer zinc oxide ceramic surface, and on the second electrode layer 2 It also has a dagger C = pole 22 that is separated from each other, and has a second π: (! 2 on the fourth electrode 22, and a conductive path 3 is connected to the-electrode open 4 = ί :: pole 22 So that the first electrode 11 and the third electrode 22 form a conductive path (step 4). ^ ^ ^ Among them, the first electrode layer 1 in step 2 and the second best in step 3 It is made of silver glue, and the conductive path 3 in step 4 is relatively three: the electric coating circuit, so that the first electrode 11 and the manufacturing method of the second device are: Surge absorption end In the early phase, a two-phase surge absorber is used. When the first electrode a has an abnormal electrode at both ends of the far second terminal c, "the reference working area will open the coincidence between the layer 1 and the second electrode." Secondly, the shell penetrates between the far-second electrode layer 2 to release the surge energy by heating; when the first
591837 五、發明說明(9) ' ' ----——---- 三1i極2 亥第二端子b兩端有異常電壓發生時’則以該第 二Mil▲為基準工作區域便啟動,使電流貫穿於該第一電 ,、邊第二電極層2之間,以發熱解除突波能量;而當 該第二端子c對該第二端子b兩端有異常電壓發生時,則以 該第二電極1 2與該第四電極22上下垂直重疊部分面積之一 區域22,為基準工作區域便啟動,使電流貫穿於該區域22, 之上下表面間,以發熱解除突波能量。如上所述,本發明 之單層三相用突波吸收器可同時保護三線間之異常狀況, 而且每次保護動作的完成,僅需_次崩潰動作,啟動保護 後所產生之熱,可藉由整個體積(表面積)來完成散敎,使 突波電流流經之區域減半,以增加壽命及信賴度。 綜上=述,本發明之單層三相用突波吸收器較之習知 突波吸收器具有下列優點: 1.利:内部線路設計,可以在單層突波吸收 產生三個獨立工作之笺绮$浊叨胳_ 干上 卜之專效大波及收态,進行三線間之完整 保護。 二:ΐ’每次突波吸收器之啟動至完成保護,只需 及ί:二。使突波電流流經之區域減半’以增加壽命 3.三線間僅需三個端 器,六個焊點之加工成本。 本ΐ::揭示者’乃較佳實施例,舉凡局部之變更或 修飾而源於本^明之技術思想而為熟習該項技藝之人-於推知者,俱不脫本發明之專利權範疇。591837 V. Description of the invention (9) '' ------------ Three 1i poles 2 When an abnormal voltage occurs across the second terminal b, the second Mil ▲ is used as the reference working area to start The current is passed between the first electrode and the second electrode layer 2 to release the surge energy by heating; and when an abnormal voltage occurs across the second terminal b to the second terminal b, the An area 22 of a part of the area where the second electrode 12 and the fourth electrode 22 vertically overlap vertically is activated as a reference working area, so that a current flows through the area 22 between the upper and lower surfaces to release the surge energy by heating. As mentioned above, the single-layer three-phase surge absorber of the present invention can simultaneously protect the abnormal conditions between the three wires, and each time the protection action is completed, only _ crash operations are required. The heat generated after the protection is started can be borrowed Dispersion is accomplished by the entire volume (surface area), which halves the area through which the surge current flows to increase life and reliability. To sum up, compared with the conventional surge absorber, the single-layer three-phase surge absorber of the present invention has the following advantages: 1. Benefit: The internal circuit design can generate three independent workings in a single-layer surge absorption.笺 绮 $ 叨叨 _ The special effects of Gan Shangbu's sweeping and closing state, for complete protection between the three lines. Two: ΐ ’Each time the surge absorber is activated to complete protection, only 及: 二. Halve the area where the surge current flows through ’to increase the life. 3. Only three terminals are needed between the three wires, and the processing cost of six solder joints. This ΐ :: discloser 'is a preferred embodiment. For those who are familiar with the technology and derived from the technical ideas of the present invention, those who have made partial changes or modifications, they do not depart from the scope of patent rights of the present invention.
591837 五、發明說明(10) 綜上所陳,本發明無論就目的、手段與功效,在在顯 示其迥異於習知之技術特徵,且其首先發明合於實用,亦 在在符合發明之專利要件,懇請 貴審查委員明察,並祈 早曰賜予專利,俾嘉惠社會,實感德便。591837 V. Description of the invention (10) In summary, the present invention, regardless of its purpose, means and effects, is showing its technical characteristics that are quite different from the conventional ones, and its first invention is practical, and it also meets the patent requirements of the invention. I urge your reviewing committee to make a clear observation, and pray that the patent will be granted as soon as possible, so as to benefit the society and feel good.
第14頁 591837 圖式簡單說明 五、【圖式之簡單說明】 圖1是一示意圖,其繪示一習知突波吸收器之上視圖 及側視圖; 圖2是一示意圖,其繪示一習知使用突波吸收器來保 護L - N - G三線電源之不意圖; 圖3(a)是一示意圖,其繪示日本第59-5601號專利之 三端子單層元件之上視圖;P.14 591837 Brief description of the drawings V. [Simplified description of the drawings] FIG. 1 is a schematic diagram showing a conventional surge absorber from above and side views; FIG. 2 is a schematic diagram showing one It is known to use a surge absorber to protect the L-N-G three-wire power supply. Figure 3 (a) is a schematic diagram showing a top view of a three-terminal single-layer component of Japanese Patent No. 59-5601;
圖3(b)是一示意圖,其繪示日本第59-5601號專利之 三端子单層元件之側視圖; 圖3(c)是一示意圖,其繪示日本第59-5601號專利之 三端子單層元件之等效電路圖; 圖4(a)是一示意圖,其繪示中華民國第313713號專利 之三端子單層元件之上視圖; 圖4 (b )是一示意圖,其繪示中華民國第3 1 3 7 1 3號專利 之三端子單層元件之側視圖; 圖5 ( a)是一示意圖,其繪示根據本發明之一較佳實施 例之單層三相用突波吸收器之上視圖;Figure 3 (b) is a schematic view showing a side view of a three-terminal single-layer component of Japanese Patent No. 59-5601; Figure 3 (c) is a schematic view showing a third terminal of Japanese Patent No. 59-5601 Equivalent circuit diagram of a terminal single-layer component; Figure 4 (a) is a schematic diagram showing the top view of the three-terminal single-layer component of the Republic of China Patent No. 313713; Figure 4 (b) is a schematic diagram showing the China A side view of a three-terminal single-layer component of the Patent No. 3 1 3 7 1 3 of the Republic of China; FIG. 5 (a) is a schematic diagram showing a single-layer three-phase surge absorption according to a preferred embodiment of the present invention Top view
圖5 ( b)是一示意圖,其繪示根據本發明之一較佳實施 例之單層三相用突波吸收器之底視圖; 圖5 ( c)是一示意圖,其繪示根據本發明之一較佳實施 例之單層三相用突波吸收器之側視圖;以及 圖5 ( d)是一示意圖,其繪示根據本發明之一較佳實施 例之單層三相用突波吸收器之等效電路示意圖。Fig. 5 (b) is a schematic view showing the bottom view of a single-layer three-phase surge absorber according to a preferred embodiment of the present invention; Fig. 5 (c) is a schematic view showing the according to the present invention A side view of a single-layer three-phase surge absorber in a preferred embodiment; and FIG. 5 (d) is a schematic diagram showing a single-layer three-phase surge in accordance with a preferred embodiment of the present invention Schematic diagram of the equivalent circuit of the absorber.
第15頁 591837 圖式簡單說明 圖6是一示意圖,其繪示根據本發明之另一較佳實施 例之單層三相用突波吸收器之示意圖; 圖7 (a )是一示意圖,其繪示根據本發明之另一較佳實 施例之單層三相用突波吸收器之示意圖; 圖7 (b )是一示意圖,其繪示根據本發明之又一較佳實 施例之單層三相用突波吸收器之示意圖。 【圖式元件標號說明】 第一電極層1 第一端子a 第二端子b 第三電極21 第四電極2 2 導電通路3 單層氧化鋅陶瓷體4 導電層7 突波吸收器9 導線w端子d、e、f 三個端子g、h、k 電極1 2 2 電極1 3 區域22’ 第一電極1 1 第二電極1 2 第二電極層2 第三端子c、c’ 區域221及222 導線3’ 氧化鋅陶瓷片6 銅線8 三端子單層元件1 〇 〇 三端子單層元件120 電極1 2 1 電極1 2 3591837 Brief Description of Drawings Figure 6 is a schematic diagram showing a schematic diagram of a single-layer three-phase surge absorber according to another preferred embodiment of the present invention; Figure 7 (a) is a schematic diagram showing FIG. 7 is a schematic diagram of a single-layer three-phase surge absorber according to another preferred embodiment of the present invention; FIG. 7 (b) is a schematic diagram illustrating a single-layer according to another preferred embodiment of the present invention Schematic diagram of three-phase surge absorber. [Illustration of reference numerals of the drawing elements] First electrode layer 1 First terminal a Second terminal b Third electrode 21 Fourth electrode 2 2 Conductive path 3 Single-layer zinc oxide ceramic body 4 Conductive layer 7 Surge absorber 9 Wire w terminal d, e, f three terminals g, h, k electrode 1 2 2 electrode 1 3 area 22 'first electrode 1 1 second electrode 1 2 second electrode layer 2 third terminal c, c' area 221 and 222 lead 3 'Zinc oxide ceramic sheet 6 Copper wire 8 Three-terminal single-layer element 1 Three-terminal single-layer element 120 Electrode 1 2 1 Electrode 1 2 3
第16頁Page 16
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US11764057B2 (en) | 2021-05-24 | 2023-09-19 | Che Inc. | Method of forming structure having coating layer and structure having coating layer |
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US11764057B2 (en) | 2021-05-24 | 2023-09-19 | Che Inc. | Method of forming structure having coating layer and structure having coating layer |
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