TW591124B - Plating bath and method for depositing a metal layer on a substrate - Google Patents

Plating bath and method for depositing a metal layer on a substrate Download PDF

Info

Publication number
TW591124B
TW591124B TW090129377A TW90129377A TW591124B TW 591124 B TW591124 B TW 591124B TW 090129377 A TW090129377 A TW 090129377A TW 90129377 A TW90129377 A TW 90129377A TW 591124 B TW591124 B TW 591124B
Authority
TW
Taiwan
Prior art keywords
metal
plating bath
copper
bath
scope
Prior art date
Application number
TW090129377A
Other languages
Chinese (zh)
Inventor
David R Gabe
Andrew J Cobley
Leon R Barstad
Mark J Kapeckas
Erik Reddington
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/971,300 external-priority patent/US20030066756A1/en
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Application granted granted Critical
Publication of TW591124B publication Critical patent/TW591124B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/241Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H05K3/242Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus characterised by using temporary conductors on the printed circuit for electrically connecting areas which are to be electroplated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

A metal plating bath and method for plating a metal on a substrate. The metal plating bath contains hydroxylamines that inhibit the consumption of additive bath components to improve the efficiency of metal plating processes. The additive bath components are added to metal plating baths to improve brightness of plated metal as well as the micro-throwing and macro-throwing power of the bath. In addition to brighteners, the additive bath components may include levelers, suppressors, hardeners, and the like. The hydroxylamines that inhibit additive consumption may be employed in metal plating baths for plating copper, gold, silver, platinum, palladium, cobalt, cadmium, nickel, bismuth, indium, tin, rhodium, iridium, ruthenium and alloys thereof.

Description

591124 A7591124 A7

利用適^的固定方式將球連接至供電裝置。此種陽極在沉 積過程中,以由沉積浴沉積銅大約相同的速率分解,而在 該沉積溶液中大約維持一定的銅含量Q因此不需要再補充 銅。 陽極的另一形式為不溶性陽極。在金屬沉積過程中, 不溶性陽極的外部尺寸不會改變。此種陽極由惰性材料, 例如利用催化性金屬(如鉑)覆蓋以避免高陽極過電壓的鈦 或鉛所構成。在印刷線路和電路板製造上,不溶性陽極較 可溶性陽極為佳。且使用不溶性陽極的電鍍製程較彼等使 用消耗性陽極更加適用,不溶性陽極可容許較高的鍍覆速 度、舄要較小的設備尺寸、保養容易、改善的溶液流動與 授拌,並且可放在靠近陰極的位置。特別有利的是不溶性 陽極不會改變尺寸的事實(亦即,槽的幾何形狀維持不 變)。因此得到更均勻的鍍覆成品。此外,通常從製造鍍鋼 元件相關之餘刻步驟的產物可得到用來提供銅來源的銅 鹽。例如’在電路板製造時,在絕緣基板的整個表面上放 置鋼層並蝕刻去除部分鋼以產生所要的電路板。 在基板上鍍覆金屬(例如銅電鍍)廣泛地使用在各種製 造程序。銅鍍層用來防止各種表面(例如:鐵表面)的腐餘, 作為外加金屬層的結合層,以增加電或熱傳導性並在許多 電性應用上提供傳導途徑。銅電鍍使用在電氣裝置,例如 電路板、積體電路、電性接觸表面等製造上。 鍍覆金屬為涵蓋鍍覆浴中多重成分的複雜製程。除了 提供金屬來源的金屬鹽、pH調節劑與界面活性劑或濕潤劑 ----*1«,· (請先閱讀背面之注意事項再填寫本頁) 訂----r----- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ 297公釐) 2 91983 591124 A7 五、發明說明(3 經濟部智慧財產局員工消費合作社印製 I ?再雇决1 訂· (請先閱讀背面之注意事項再填寫本頁) 以外,許多鍍覆浴,例如電鍍浴,含有改善鍍覆製程各種 方面的化學化合物。此種化學化合物或添加劑為輔助的鍍 覆浴成分,用來增進金屬鍍層的光澤性、被錢金屬尤其是 與延性有關的物理性質及電鍍浴的微觀電鑛能力和巨觀電 鑛能力。添加劑的主要考量係在表面之金屬沉積層具有光 澤表面處理性、平整性及均句性的效果。使此類添加劑之 鍍覆浴濃度維持在小的容許範圍内對於得到高品質的金屬 積層而言至為重要。此種添加劑在金屬鍍覆過程中會分 解。添加劑分解係由於在陽極氧化,在陰極還原以及化學 降解所致。當添加劑在鍍覆過程中分解時,分解產物可能 導致金屬層的沉積性質較難符合工業標準的要求。在工業 中所採用添加劑之一般的添加方式,係根據操作者建立的 經驗法則以嘗試並維持添加劑的最佳濃度。但由於添加劑 在鍍覆浴中係以少量濃度存在,亦即溶液的百萬分之一, 因此監測可改善金屬鍍層之添加劑的濃度仍極為困難。而 且在鍍覆過程中,添加劑的錯合混合物以及由添加劑形成 的降解產物使得再補充程序複雜化。再者,特定添加劑的 消耗並非隨時間或鍍覆浴的使用而始終保持不變。因此, 無法確知特定添加劑濃度以及在鍍覆浴中添加劑最後減少 或增加至超出可容許範圍的程度。假使添加劑含量超出容 許範圍太多,會損害金屬積層品質且該積層可能在外觀上 失去光澤及/或在結構上脆化或粉末化。其他結果包括低電 鍍能力及/或具有不良平整性的鍍覆褶層(plating f〇Ms)。在 多層印刷電路板製造中電鍍貫穿孔内連線為一要求高鍍覆 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公楚) 591124 A7 五、發明說明(4 品質的實例。 (靖先閱讀背面之注意事項再填寫本頁) 鑛覆浴的穩定性與壽命極為重要。改善金屬鍵層之添 加劑所增加的穩定性t導致鍍覆浴較的壽命。具有較長 哥命的鑛覆冷在經濟上極為重要。如上所述,經常汰換錢 覆浴和處理含有降解添加物的鍍覆浴會中斷金屬鍍覆的操 作。這種中斷會降低產率。因此,對於能防止或減少添加 劑分解之穩定的鍍覆浴係高度地令人期待。 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 美國專寿J第4,469,564號案揭示宣稱可增加電鍍浴壽 命的銅電鍍製程。該專利說明該製程可採用可溶性或不溶 性陽極。使陽離子可滲透膜包圍該陽極以防止有機添加物 與該陽極接觸並且為陽極所氧化。此種製程的缺點為該陽 離子可滲透膜長時間暴露於腐餘性化學物質可能引起該膜 分解。例如,鍍覆浴的pH範圍可能低於丨〇到高達u 〇 及更问並且田鍍覆浴成分消耗或分解時,鑛覆浴的ρΉ 範圍可能會在這段時間内波動。因此,本技藝之操作者必 須具備能配合化學組成選擇在電鍍過程中不會因波動 而分解之薄膜的選擇能力。此外,如以上討論,電鍍浴含 有各種成分。例如有機添加劑或其分解產物之成分可能會 阻塞陽離子可滲透膜之中的孔隙而阻止陽離子通過該鍍覆 浴。因此,操作者必須停止該電鍍製程並汰換該薄臈。孔 隙阻塞及停下製程會導致電鍍製程沒有效率。 日本專利申請案63014886 Α2揭示一種具有氯離子並 含有〇·〇1至100g/l含量之過渡金屬離子的酸性銅電鍍浴。 該電鑛浴宣稱不會遭致有機添加劑消耗的問題。此種有機 本紙張尺—度適用中國國家標準(CNS)A4規格⑵G x 297公爱) 4 919&3 591124 經濟部智慧財產局員工消費合作社印製 A7 '—__________B7 ___ 五、發明說明(5 ) 添加劑包括光澤劑、平整劑、硬化劑、展性與延性改質劑, 及沉積改質劑。 EP 0402 896揭示一種在酸性銅電鍍溶液中穩定有機 添加劑(例如光澤劑)的方法。該方法係在鈦籃中使用銅屑 之可溶性陽極。將錳、鐵'鉻及鈦之過渡金屬鹽類以不超 過5 g/Ι的濃度添加至該電鑛溶液中。該過渡金屬可以至少 兩種正氧化態存在,但在溶液中實質上以其最低之常見的 正氧化態存在。在溶液中過渡金屬離子正氧化態的存在宣 稱可穩定該有機添加物。 美國專利第6,099,711號案揭示一種使用不溶性陽極 的電鍍方法’該方法藉使用金屬離子產生劑於電鍍浴中, 以可逆氧化還原系統的方式補充金屬離子,例如銅離子。 由於使用不溶性陽極代替可溶性陽極,所以在該電鍍浴中 並非藉由陽極溶解補充金屬離子。因此係以該可逆之氧化 還原系統補充金屬離子。使用鐵(II)和鐵(111)化合物作為電 化學可逆氧化還原系統。該專利所揭示的其他氧化還原系 統包括金屬鈦、飾、飢、猛與鉻。此種金屬可以硫酸鐵(η) 七水合物、硫酸鐵(II)九水合物、鈦氧基硫酸(titanyl_ sulfuric acid)、硫酸鈽(IV)、偏飢酸納、硫酸猛(〗ι)或鉻酸 鈉的形式添加至銅沉積溶液中。該專利說明該氧化還原系 統可相互組合。 ^1 ^1 1 ϋ ·ϊ *ϋ y 爾 a^i I 1_1 I “ (請先閱讀背面之注意事項再填寫本頁) 除在該電鍍浴中補充金屬離子之外,該專利說明該方 法能顯著防止有機添加劑的降解。由於陽極電位所致,因 此在電鍍浴中陽極處會電解產生有機添加劑的大量降解。Connect the ball to the power supply using a suitable fixing method. During the deposition of such an anode, the copper is decomposed at about the same rate as the copper deposited by the deposition bath, and a certain copper content Q is maintained in the deposition solution, so no additional copper is needed. Another form of anode is an insoluble anode. The external dimensions of the insoluble anode do not change during metal deposition. Such anodes consist of inert materials, such as titanium or lead, which are covered with a catalytic metal such as platinum to avoid high anode overvoltages. In printed circuit and circuit board manufacturing, insoluble anodes are better than soluble anodes. In addition, the electroplating process using insoluble anodes is more suitable than their use of consumable anodes. Insoluble anodes can allow higher plating speeds, require smaller equipment sizes, easy maintenance, improved solution flow and mixing, and can be discharged. Near the cathode. Particularly advantageous is the fact that the insoluble anode does not change size (i.e. the geometry of the tank remains unchanged). As a result, a more uniform plated product is obtained. In addition, the copper salt used to provide the copper source is usually obtained from the products of the remaining steps associated with the manufacture of steel-plated components. For example, in the manufacture of a circuit board, a steel layer is placed on the entire surface of the insulating substrate and a portion of the steel is etched away to produce a desired circuit board. Plated metals (such as copper plating) on substrates are widely used in various manufacturing processes. Copper plating is used to prevent corrosion on various surfaces (such as iron surfaces), as a bonding layer with an additional metal layer, to increase electrical or thermal conductivity and to provide a conductive pathway in many electrical applications. Copper plating is used in the manufacture of electrical devices such as circuit boards, integrated circuits, and electrical contact surfaces. Plating metal is a complex process covering multiple components in a plating bath. In addition to providing metal source metal salts, pH adjusters and surfactants or humectants ---- * 1 «, · (Please read the precautions on the back before filling this page) Order ---- r ---- -Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economics This paper is printed to the Chinese National Standard (CNS) A4 (21 × 297 mm) 2 91983 591124 A7 V. Invention Description (3 Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economics Manufacturing I? Re-employment order 1 (please read the precautions on the back before filling out this page), many plating baths, such as plating baths, contain chemical compounds that improve various aspects of the plating process. Such chemical compounds or additives It is a supplementary component of the plating bath, used to improve the gloss of the metal coating, the physical properties of the metal, especially the ductility, and the micro-electric and mineral power of the electroplating bath. The main consideration of additives is on the surface The metal deposition layer has the effects of glossy surface treatment, flatness and uniformity. Keeping the concentration of the plating bath of such additives within a small allowable range is important for obtaining high-quality metal laminates. It is important. Such additives will decompose during metal plating. Decomposition of additives is caused by anodic oxidation, cathodic reduction and chemical degradation. When additives decompose during plating, the decomposition products may cause the deposition of metal layers It is difficult to meet the requirements of industrial standards. The general method of adding additives used in the industry is to try and maintain the optimal concentration of additives according to the rules of thumb established by the operator. However, the additives are used in small amounts in the plating bath. The concentration exists, that is, one millionth of the solution, so it is still extremely difficult to monitor the concentration of additives that can improve the metal coating. Moreover, during the plating process, the mixture of additives and degradation products formed by the additives make the replenishment process Complicated. Furthermore, the consumption of specific additives does not always change over time or the use of the plating bath. Therefore, it is impossible to know the concentration of the specific additive and the final reduction or increase of the additive in the plating bath beyond the allowable range .If the content of additives exceeds the allowable range too much, it will damage the gold It is a laminate quality and the laminate may lose its appearance and / or be brittle or powdery in structure. Other results include low plating ability and / or plating f0Ms with poor flatness. In the manufacture of multilayer printed circuit boards, the inner wires of the plated through-holes are required to be highly plated. This paper is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297). 591124 A7 V. Description of the invention (4 Examples of quality. ( Jing first read the precautions on the back before filling out this page) The stability and life of the ore bath are extremely important. The added stability of the additives that improve the metal bond layer results in a longer life of the plating bath. Overcoating is extremely economically important. As mentioned above, frequent replacement of baths and treatment of plating baths containing degrading additives can interrupt metal plating operations. This interruption reduces productivity. Therefore, a stable plating bath system that can prevent or reduce the decomposition of additives is highly expected. Printed by the Consumer Affairs Agency of the Intellectual Property Agency of the Ministry of Economic Affairs, US Patent No. 4,469,564 reveals the copper plating process that claims to increase the life of the plating bath. The patent states that the process can use soluble or insoluble anodes. A cation-permeable membrane surrounds the anode to prevent organic additives from contacting the anode and being oxidized by the anode. The disadvantage of this process is that prolonged exposure of the cationic permeable membrane to residual chemicals may cause the membrane to decompose. For example, the pH range of the plating bath may be lower than 丨 0 to as high as u 〇 and more so when the components of the field plating bath are consumed or decomposed, the ρΉ range of the mineral coating bath may fluctuate during this time. Therefore, the operator of this technique must have the ability to select a film that will not decompose due to fluctuations in the plating process in accordance with the chemical composition. In addition, as discussed above, the plating bath contains various ingredients. Components such as organic additives or their decomposition products may block the pores in the cation-permeable membrane and prevent cations from passing through the plating bath. Therefore, the operator must stop the electroplating process and replace the sheet. Blocking the holes and stopping the process can lead to inefficient plating processes. Japanese patent application 63014886 A2 discloses an acid copper plating bath having chloride ions and containing transition metal ions at a content of 0.001 to 100 g / l. The electric mineral bath claims to not suffer from the consumption of organic additives. This kind of organic paper ruler-degree applies to the Chinese National Standard (CNS) A4 specification ⑵G x 297 public love) 4 919 & 3 591124 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 '—__________ B7 ___ 5. Description of the invention (5) Additives include gloss agents, levelling agents, hardeners, ductile and ductile modifiers, and deposition modifiers. EP 0402 896 discloses a method for stabilizing organic additives such as gloss agents in acid copper plating solutions. This method uses soluble anodes of copper filings in a titanium basket. The transition metal salts of manganese, iron 'chromium and titanium are added to the power ore solution at a concentration not exceeding 5 g / 1. The transition metal can exist in at least two positive oxidation states, but exists substantially in solution in its lowest common positive oxidation state. The presence of the positive oxidation state of the transition metal ion in the solution claims to stabilize the organic additive. U.S. Patent No. 6,099,711 discloses a plating method using an insoluble anode. The method uses a metal ion generator in a plating bath to replenish metal ions, such as copper ions, in a reversible redox system. Since an insoluble anode is used instead of a soluble anode, metal ions are not supplemented in this plating bath by anode dissolution. Therefore, this reversible redox system is used to supplement metal ions. Iron (II) and iron (111) compounds were used as the electrochemical reversible redox system. Other redox systems disclosed in the patent include titanium metal, trim, starvation, ferrous and chromium. Such metals can be iron sulfate (η) heptahydrate, iron (II) sulfate nonahydrate, titanyl sulfuric acid, titanium (IV) sulfate, sodium metaquinone, sodium sulfate, or Sodium chromate was added to the copper deposition solution. The patent states that the redox systems can be combined with each other. ^ 1 ^ 1 1 ϋ · ϊ * ϋ y er a ^ i I 1_1 I "(Please read the precautions on the back before filling out this page) In addition to supplementing metal ions in the plating bath, the patent states that the method can Significantly prevent the degradation of organic additives. Due to the anode potential, a large amount of organic additives will be degraded by electrolysis at the anode in the plating bath.

591124 A7 五、發明說明(6 ) 本技藝之操作者相信鐵(11)對鐵(m)的氧化還原反應(相對 於SCE約為〇.530v)的電位會提供陽極足夠低的電位以 防止光澤劑在陽極處氧化。因此能減少光澤劑的消耗。此 種有機添加劑包括光澤劑、平整劑及濕潤劑。所使用的光 澤劑包括水溶性硫化合物及含氧之高分子量的化合物。其 他添加劑化合物包括含氮的硫化合物、聚合氮化合物及/ 或聚合吩嗪氮鎗化合物。 填 寫 雖然該專利宣稱能補充金屬離子與減少光澤劑消耗, 然而該711專利所揭示之方法仍具有缺點。在可逆氧化還 原反應中,鐵(III)可還原回鐵(11),而銅卻氧化為銅(π)。 此外,經過一段時間後會有鐵累積在該系統中而需要停工 及清潔操作的問題存在。此種操作會降低該方法的效率, 並增加該方法的該方法的另_缺點為該氧化還原系 統中的化合物濃度必須使沉積溶液中能維持固定濃度的金 屬離子。因此,該方法之沉積溶液中氧化還原化合物濃度 存在著狹小或不存在的操作誤差邊限。於是,該氧化還^ 化合物濃度的少許改變即可能妨礙該方法的操作。 ’、 經濟部智慧財產局員工消費合作社印製 曰本專利申請案第96199385號案揭示一種電鍍方法 及含有氟化物為主之界面活性劑與例如光澤劑之有^添加 劑的溶液。&加該氟化物為主之界面活性劑宣稱 止I 澤劑消耗。 九 儘管在金屬鍍覆浴中已有防止添加劑降解的方法,作 仍舊存在著對於防止鍍覆浴添加劑降解 一 要。 料解之其他方法的需 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公釐) 91983 6 591124 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(7 ) [發明概述] 本發明係關於-種含有可在鑛覆浴中抑制添加劑降解 之羥胺的鍍覆浴,以及使用該鍍覆浴在基板上鍍覆金屬的 方法。此種羥胺包括具有下式之化合物·· (R'-NHR^OH)^ 其中R1及R2各獨立為氫、或(^至匕烷基,11為ι戋2, 當 η 為 1 時,X 為 HS04-、H2P04-、N03-、F-、cr、以_或工 •,當n為2時,X為s〇42_。 上述羥胺可使用於鍍覆鋼、金、銀、鈀、鉑、銘、編、 鉻、鎳、鉍、銦、錫、铑、鉛、銥、釕或其合金之金屬鍍 覆浴中。 添加經胺至錢覆浴中有利於防止或降低金屬鑛覆浴添 加劑的降解。因此,對於具有長使用壽命的鍍覆浴,以及 效率咼的金屬鑛覆方法提供經胺。再者,由於本發明之經 胺防止該添加劑之降解,因此本發明之鍍覆浴可在基板上 提供具有良好物理機械性質之均勻、高光澤度的金屬層。 本發明之金屬鍍覆浴可使用在任何可被鍍覆金屬的基 板上鍍覆金屬層。本發明之金屬鍍覆方法包含在浸入含有 溶解之鍍覆金屬的鍍覆浴中的兩電極間通過電流、鍍覆浴 添加劑及本發明之一種或多種抑制添加劑消耗的化合物。 本發明之經胺與方法可用於任何使用金屬鍍覆的工 業。例如,該金屬鍍覆浴可使用於電氣裝置如印刷電路與 線路板、積體電路、電性接觸表面與連接器、電解薄片、 微晶片應用之矽晶圓、半導體及半導體封裝、導線架、光 _尺度適m 家標準(CNS)A4規格⑵G χ 297公爱_) ? ------ --訂---------| (請先閱讀背面之注意事項再填寫本頁) 591124 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明( 電元件與光電元件封裝,及例如在晶圓上之銲錫凸塊等製 造上。而且該金屬鍍覆浴可用來金屬鍍覆珠寶裝飾品、傢 俱配件、汽車零件、衛生設備等。此外,該羥胺也可用在 廢棄物處理方法上。 本發明也包括由電源、陽極 '陰極與含有抑制添加劑 消耗之化合物的金屬鍍覆浴。該裝置之陰極為金屬鍍覆 物。該裝置可為垂直或水平金屬鍍覆裝置。 本發明主要目的係於金屬鍍覆浴中提供防止或減少添 加劑降解之羥胺。 本發明另一目的係提供一具有長操作壽命之金屬鑛覆 浴。 本發明又一目的係提供在基板上鍍覆金屬的有效方 法。 本發明進一步目的係提供在基板上鍍覆具有良好物理 機械性質之均勻、高光澤度金屬層的方法。 本發明又另一目的係提供含有羥胺金屬鍍覆浴之裝 置。 熟習本技藝人士可於閱讀本發明詳細說明及附加之申 請專利範圍後明瞭其他目的及優點。 [圖示簡單說明] 第1圖係根據本發明利用垂直法處理工作部件之裝置 概略圖。 第2圖係根據本發明利用水平法處理工作部件之裝置 概略圖。 Μ氏張尺度剌中國國家標準(CNS)A4規格⑵G χ 297公复y ----------"1«··--------訂---------j (請先閱讀背面之注意事項再填寫本頁) 591124 A7591124 A7 V. Description of the invention (6) The operator of this technology believes that the redox reaction of iron (11) to iron (m) (approximately 0.530v relative to SCE) will provide the anode with a sufficiently low potential to prevent gloss The agent is oxidized at the anode. Therefore, the consumption of the gloss agent can be reduced. Such organic additives include gloss agents, levelling agents, and wetting agents. The gloss agents used include water-soluble sulfur compounds and oxygen-containing high molecular weight compounds. Other additive compounds include nitrogen-containing sulfur compounds, polymeric nitrogen compounds, and / or polymeric phenazine nitrogen gun compounds. Filling out Although the patent claims to replenish metal ions and reduce the consumption of gloss agents, the method disclosed in the 711 patent still has disadvantages. In the reversible oxidation reduction reaction, iron (III) can be reduced back to iron (11), while copper is oxidized to copper (π). In addition, after some time, iron may accumulate in the system, requiring problems such as downtime and cleaning operations. This operation reduces the efficiency of the method and increases the method. Another disadvantage of the method is that the compound concentration in the redox system must be such that the metal ion in the deposition solution can be maintained at a fixed concentration. Therefore, there is a small or non-existent margin of operation error in the redox compound concentration in the deposition solution of this method. Thus, a small change in the oxidation compound concentration may hinder the operation of the method. ”, Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, Japanese Patent Application No. 96199385, discloses a plating method and a solution containing a fluoride-based surfactant and an additive such as a glossing agent. & Adding the fluoride-based surfactant claimed to stop the consumption of I-zeolite. Nine Although there are methods to prevent the degradation of additives in metal plating baths, there is still a need to prevent the degradation of plating bath additives. Requirements for other methods of interpretation The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 91983 6 591124 Printed by A7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (7) [Overview of the invention The present invention relates to a plating bath containing hydroxylamine, which can suppress the degradation of additives in a mineral coating bath, and a method for plating a metal on a substrate using the plating bath. Such hydroxylamines include compounds having the formula: (R'-NHR ^ OH) ^ where R1 and R2 are each independently hydrogen, or (^ to alkyl, 11 is ι 戋 2, and when η is 1, X It is HS04-, H2P04-, N03-, F-, cr, or _ or industrial. When n is 2, X is so42_. The above hydroxylamine can be used to plate steel, gold, silver, palladium, platinum, Inscriptions, braces, chromium, nickel, bismuth, indium, tin, rhodium, lead, iridium, ruthenium or their alloys in metal plating baths. The addition of amines to the baths is helpful to prevent or reduce the metal ore bath additives. Degradation. Therefore, amines are provided for plating baths with long service life and efficient metal ore coating methods. Furthermore, since the amines of the present invention prevent the degradation of the additives, the plating baths of the present invention can be used in The substrate provides a uniform, high-gloss metal layer with good physical and mechanical properties. The metal plating bath of the present invention can be used to plate a metal layer on any substrate that can be plated with metal. The metal plating method of the present invention includes Passing current between two electrodes immersed in a plating bath containing dissolved plating metal, plating bath additives And one or more compounds for inhibiting the consumption of additives of the present invention. The amines and methods of the present invention can be used in any industry using metal plating. For example, the metal plating bath can be used in electrical devices such as printed circuits and circuit boards, product Body circuits, electrical contact surfaces and connectors, electrolytic wafers, silicon wafers for microchip applications, semiconductors and semiconductor packages, lead frames, optical_standards (CNS) A4 specifications (G χ 297 public love_)? ------ --Order --------- | (Please read the notes on the back before filling this page) 591124 Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Components and optoelectronic component packaging, and for example, the manufacture of solder bumps on wafers. And the metal plating bath can be used to metal plate jewelry, furniture accessories, automotive parts, sanitary equipment, etc. In addition, the hydroxylamine also It can be used in waste treatment methods. The invention also includes a metal plating bath consisting of a power source, an anode and a cathode, and a compound containing a compound that suppresses the consumption of additives. The cathode of the device is a metal plating. The device may be Straight or horizontal metal plating device. The main object of the present invention is to provide hydroxylamine in the metal plating bath to prevent or reduce the degradation of additives. Another object of the present invention is to provide a metal ore coating bath with a long operating life. The object is to provide an effective method for plating metal on a substrate. A further object of the present invention is to provide a method for plating a uniform, high-gloss metal layer with good physical and mechanical properties on a substrate. Yet another object of the present invention is to provide hydroxylamine-containing Device for metal plating bath. Those skilled in the art can understand other objects and advantages after reading the detailed description of the present invention and the scope of the attached patent application. [Simplified illustration of the figure] Figure 1 shows the processing of working parts by the vertical method according to the present invention. Device schematic diagram. Fig. 2 is a schematic diagram of an apparatus for processing a working part using a horizontal method according to the present invention. M's Zhang scale 剌 Chinese National Standard (CNS) A4 specification ⑵ G χ 297 public compound y ---------- " 1 «·· -------- Order ------ --- j (Please read the notes on the back before filling this page) 591124 A7

[元件符號說明] 10 裝置 12 容器 14 金屬鍍覆浴 16 工作部件 18 陽極 20 電源 22 貯槽 24 噴霧室 26 狹縫 28 平板 30 中間滾轴 32 滾軸刷 34 陽極 36 供電裝置 38 喷嘴 40 金屬鍍覆浴 42 貯槽 ---------ί·· (請先閱讀背面之注音?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 [發明詳細說明] 本發明t金屬Μ覆浴含有防止或減少添加至金屬鑛覆 浴之添加劑消耗的羥胺,以改善在基板上的金屬沉積。該 金屬鍍覆浴可用於在基板上鍍覆金屬之任何適當製程。二 種經胺具有下式: (R'-NHR^OH)^ 其中R1及R2各獨立為氫、或(^至(^烷基,11為 當 η 為 1 時,X 為 Hs〇4·、H2P04-、NO,、F-、、以.或工 ·,當n為2時,X為SO,。該(^至匕烷基包括甲基、乙 基、丙基、異丙基、丁基、異丁基、第二丁基、第二丁美、 戊基、異戊基、新戊基、第三戊基、己基、λ 开d基、3 -甲 基戊基、2,2-二甲基丁基,或2,3-二甲基丁基。 較佳之羥胺係R1和R2為氫之羥胺,例▲ 1 J如硫酸羥胺、 硝酸羥胺及氣化羥胺。更佳為硫酸羥胺、硝 月醆羥胺。上述 ----訂:---------· 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公釐) 9 91983 591124 A7[Description of Symbols] 10 Device 12 Container 14 Metal plating bath 16 Working parts 18 Anode 20 Power supply 22 Storage tank 24 Spray chamber 26 Slot 28 Flat plate 30 Center roller 32 Roller brush 34 Anode 36 Power supply device 38 Nozzle 40 Metal plating Bath 42 Tank --------- ί · (Please read the note on the back? Matters before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [Detailed description of the invention] tmetal M cover of the present invention The bath contains hydroxylamine that prevents or reduces consumption of additives added to the metal ore overlay bath to improve metal deposition on the substrate. The metal plating bath can be used in any suitable process for plating metal on a substrate. Two kinds of amines have the following formula: (R'-NHR ^ OH) ^ wherein R1 and R2 are each independently hydrogen, or (^ to (^ alkyl, 11 is when η is 1, X is Hs), H2P04-, NO ,, F-,, or. When n is 2, X is SO. The (^ to alkyl group includes methyl, ethyl, propyl, isopropyl, butyl , Isobutyl, second butyl, second tamibutene, pentyl, isopentyl, neopentyl, third pentyl, hexyl, λ-d group, 3-methylpentyl, 2,2-di Methylbutyl, or 2,3-dimethylbutyl. Preferred hydroxylamines R1 and R2 are hydrogenated hydroxylamines, such as ▲ 1J such as hydroxylamine sulfate, hydroxylamine nitrate and gasified hydroxylamine. More preferred are hydroxylamine sulfate and nitrate. Monthly hydroxylamine. The above-mentioned order: --------- · This paper size is applicable to China National Standard (CNS) A4 (210x 297 mm) 9 91983 591124 A7

591124 Α7 Β7 五、發明說明(11 ) 中 R11 為 〇1至 C6 烧基或芳基);或 H03S_Ar_S-S-Ar-S03H(^ 中Ar為苯基或 基)的化合物。該烷基及芳基的取代基例 如可為烷基、鹵素或烷氧基。此種光澤劑的實例為3-Μ基 •丙基磺酸(鈉鹽)、2-Μ基-乙烷磺酸(鈉鹽)、二硫化雙磺酸 丙基(BSDS)。此類化合物揭示於美國專利第3,770,598號 案、第 4,374,709 號案、第 4,376,685 號案、第 4,555,315 號案、第4,673,469號案,已全部併入本文作為參考。此 類多硫化物也可用來增加沉積金屬的延性。尤其對於銅鍍 覆浴而言,其他適當光澤劑的實例包括Ν,Ν-二甲基硫代胺 基甲酸(3-續酸丙基)酯、納鹽(DPS)、(〇_乙基二硫代碳酸 根)-S-(3-績酸丙基)-酯0、鉀鹽(ορχ)、3-[(胺基-亞胺甲基)_ 硫代]-1 -丙烧績酸(UPS)、3·(2-苯并噻嗤基硫代)_ι _丙烧績 酸、鈉鹽(ZPS)及二硫化雙續酸丙基之硫醇(mps)。 可用於鑛覆浴的平整劑實例包括,但不限於經烧基化 之聚稀亞胺、有機橫酸基續酸鹽。此類化合物實例包括 1-(2-羥乙基)-2-乙撐硫脲(HIT)、4-巯基吡啶、2_酼基噻唑 啉、乙樓硫脲、硫脲與經燒基化之聚稀亞胺。此類化合物 揭示於美國專利第4,376,685號案、第4,555,315號案、及 第3,770,5 98號案,其揭示内容已全部併入本文作為參考。 在本發明範疇内,可在鍍覆浴中作為光澤劑之其餘添 加劑實例包括,但不限於例如3-(苯并噻唑基_2_硫代)_丙基 績酸鈉鹽、3·巯基丙烷-1—磺酸鈉鹽' 伸乙基二硫代二丙基 績酸納鹽、雙-(對_續酸苯基)_二硫化二鈉鹽、雙_(ω_績酸 丁基)_一硫化二納鹽、雙_(ω_績酸經丙基)_二硫化二鈉鹽、 ί«_· (請先閱讀背面之注意事項再填寫本頁) 訂--------- ? 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 11 91983 591124 A7 B7 五、發明說明(12 ) 雙-(ω-磺酸丙基)-二硫化二鈉鹽、雙_(.磺酸丙基)_硫化二 鈉鹽、甲基-(ω-磺酸丙基)二硫化鈉鹽、甲基-(ω_績酸丙基)-三硫化二鈉鹽、0_乙基-二硫代碳酸磺酸丙基)_酯、 硫代羥乙酸鉀鹽、硫代磷酸·〇_乙基-雙_(ω·磺酸丙基酯二 鈉鹽、硫代磷酸-三(ω-磺酸丙基)-酯三鈉鹽等硫化合物。 可用來作為抑制劑之含氧高分子量的化合物實例包 括,但不限於羧甲基纖維素、壬基苯酚聚乙二醇醚、辛二 醇雙-(聚烧二醇醚)、辛醇聚烧二醇醚、油酸聚乙二醇酯、 聚乙烯丙二醇、聚乙二醇、聚乙二醇二甲醚、聚環氧丙二 醇、聚丙二醇、聚乙烯醇、硬脂酸聚乙二醇酯、硬脂醇聚 乙二醇醚、聚環氧乙烷等。 吩畊類染料(藏紅型)與吩哄偶氮染料(賈納斯綠Β型) 可用來作為平整劑。使用聚醚以增加金屬鑛層的厚度與均 勻性。將光澤劑與平整劑以鍍覆浴的十億分之一至大約 l.Og/L的用量添加至鍍覆浴。光澤劑與平整劑以百萬分之 10至百萬分之500的範圍較佳。鍍覆浴成分的範圍可由一 經濟部智慧財產局員工消費合作社印製 -------------- I --- 項再决寫 (請先閱讀背面之注意事項再填寫本頁) 種鑛覆浴組成改變至下一種組成。因此上述添加劑重量範 圍係一般範圍。 可用於本發明鍍覆浴之適當的濕潤劑或界面活性劑實 例包括非離子界面活性劑,例如烷基苯氧基聚乙氧乙醇。 也可使用其他含有多重氧伸乙基之適當的濕潤劑。此類濕 潤劑包括I有20至150個重複單元之聚氧乙稀聚合物的化 合物。此種化合物也可作為抑制劑。該種聚合物也包括聚 環氧乙院—與聚環氧丙烷之嵌段共聚物。以習知用量添加界 本紙張尺度適用中國國家標準(CNS)A4規格⑽X 297公复)---'~~_____ 11 919S3. 591124 A7591124 Α7 B7 5. In the description of the invention (11), R11 is 〇1 to C6 alkyl or aryl); or H03S_Ar_S-S-Ar-S03H (where Ar is phenyl or aryl). The alkyl and aryl substituents may be, for example, alkyl, halogen, or alkoxy. Examples of such gloss agents are 3-M-propylsulfonic acid (sodium salt), 2-M-methyl-ethanesulfonic acid (sodium salt), propyl disulfide bissulfonate (BSDS). Such compounds are disclosed in U.S. Patent Nos. 3,770,598, 4,374,709, 4,376,685, 4,555,315, and 4,673,469, all of which are incorporated herein by reference. Such polysulfides can also be used to increase the ductility of the deposited metal. Especially for copper plating baths, examples of other suitable glossing agents include N, N-dimethylthiocarbamate (3-contanoic acid propyl) ester, sodium salt (DPS), (〇_ethyl di Thiocarbonate) -S- (3-phenoxypropyl) -ester 0, potassium salt (ορχ), 3-[(amino-iminomethyl) _ thio] -1 -propionic acid ( UPS), 3 · (2-benzothiazolylthio) _ι_propionic acid, sodium salt (ZPS), and dithiodisulfonic acid propyl mercaptan (mps). Examples of levelling agents that can be used in the ore-covered bath include, but are not limited to, calcined polyimide, organic horizontal acid-based continuous acid salts. Examples of such compounds include 1- (2-hydroxyethyl) -2-ethylenethiourea (HIT), 4-mercaptopyridine, 2-fluorenylthiazoline, thiourea, thiourea, and thiourea Polyimide. Such compounds are disclosed in U.S. Patent Nos. 4,376,685, 4,555,315, and 3,770,5 98, the disclosures of which are all incorporated herein by reference. Within the scope of the present invention, examples of other additives that can be used as a glossing agent in a plating bath include, but are not limited to, for example, 3- (benzothiazolyl_2_thio) _propylacetic acid sodium salt, 3. mercaptopropane -1—Sodium salt of sulfonic acid 'sodium salt of ethylene dithiodipropyl diacetate, bis- (p-_contanoic acid phenyl) _disodium disulfide, bis_ (ω_acetic acid butyl) _ Di sodium salt monosulfide, bis (ω_ji acid via propyl) _ disodium disulfide salt, ί «_ · (Please read the precautions on the back before filling this page) Order -------- -? Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 11 91983 591124 A7 B7 V. Description of the invention (12) Double- (ω-sulfonic acid Propyl)-disodium disulfide, bis _ (. Sulfopropyl) _ disodium sulfide, methyl- (ω-sulfopropyl) sodium disulfide, methyl- (ω_propionic acid propyl) Group)-disodium trisulfide, 0_ethyl-dithiocarbonate sulfonate) ester, potassium thioglycolate, thiophosphoric acid · 〇_ethyl-bis_ (ω · propanesulfonic acid) Ester sodium disodium salt, phosphorothio-tris (ω-sulfopropyl) -ester trisodium salt, etc. Examples of oxygen-containing high molecular weight compounds that can be used as inhibitors include, but are not limited to, carboxymethyl cellulose, nonylphenol polyethylene glycol ether, octanediol bis- (polyalkylene glycol ether), octane Alcohol polyethylene glycol ether, polyethylene glycol oleate, polyethylene propylene glycol, polyethylene glycol, polyethylene glycol dimethyl ether, polypropylene oxide glycol, polypropylene glycol, polyvinyl alcohol, polyethylene glycol stearate Alcohol esters, stearyl alcohol polyethylene glycol ether, polyethylene oxide, etc. Phenotype dyes (saffron type) and phenoxazo dyes (Janus green type B) can be used as leveling agents. Polyethers are used. In order to increase the thickness and uniformity of the metal ore layer, the glossing agent and the leveling agent are added to the plating bath in an amount of one billionth to about 1.0 g / L of the plating bath. The glossing agent and the leveling agent are in millions The range of 10 parts per million to 500 parts per million is better. The range of the composition of the plating bath can be printed by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -------------- I --- Write the item again (please read the notes on the back before filling this page) The composition of the mineral coating bath is changed to the next composition. Therefore the weight of the above additives This is a general range. Examples of suitable wetting agents or surfactants that can be used in the plating baths of the present invention include non-ionic surfactants, such as alkylphenoxy polyethoxyethanol. Other polyoxyethylene groups can also be used Suitable humectants. Such humectants include compounds of polyoxyethylene polymers with 20 to 150 repeating units. Such compounds also act as inhibitors. The polymers also include polyethylene oxide— Block copolymer with polypropylene oxide. Added in the conventional amount. The paper size is applicable to Chinese National Standard (CNS) A4 specification (X 297 public copy) --- '~~ _____ 11 919S3. 591124 A7

13 面活性劑與濕潤劑。 除該添加劑之外’鍍覆浴中其餘鍍覆浴成分包括如金 屬離子源、PH調整劑(例如無機酸),與豳離子來源。一般 而έ ’鍍覆浴為水溶液。鍍覆浴的pH範圍可在〇至大約 W,較佳為〇至8的範圍。用於鍍覆浴的濕潤劑以及在此 種鍍覆冷中的使用量為本技藝所周知者。所使用的無機酸 包括,但不限於硫酸 '鹽酸、硝酸、磷酸等。以硫酸為較 佳。#素離子則視需要時使用。鍍覆浴中所使用的鹵離子 包括氯化物、氟化物和溴化物。將此種齒化物以水溶性鹽 的形式添加至鍍覆浴中。較佳為氣化物,以氣化鈉,較佳 為HC1導入該鍍覆浴中。金屬水溶性鹽供給在基板上欲鍍 覆金屬的來源。此種水溶性鹽類包括鋼、鎳、鉻、金、銀、 編鉑纪、銘、叙、錫、錢、銥、釕、錯及銦的金屬鹽 類。亦可利用本發明鍍覆浴鍍覆銲錫。 經濟部智慧財產局員工消費合作社印製 銅係利用本發明鍍覆浴之較佳欲鍍金屬。以電鍍鋼為 較佳。適合的鋼可以任何溶液可溶解的鋼化合物形式存 在。適合的鋼化合物包括,但不限於銅^化物、鋼硫酸鹽 類、烷磺酸銅、醇磺酸銅等。當使用鋼齒化物時,氯化物 為較佳之齒化物。較佳之鋼化合物為硫酸銅、烷磺酸鋼, 或其混合物。更佳者為硫酸銅、甲烷磺酸銅或其混合物。 適用於本發明之鋼化合物係通常為商業上可購得或可藉由 文獻中已知的方法製備。在基板上鍍銅時,該鍍覆浴的pH 可在0至大約14的範圍。該鍍覆浴以pH由〇至大約8〇 的範圍為較佳。 91983 卜紙張尺度中關家標準(CNsi_A4規格⑵Q χ 297公爱) 591124 A7 B7 五、發明說明(14 ) 金屬離子於鍍覆浴中的濃度分布在〇 〇1〇g/L至大約 200g/L ’較佳為〇.5g/L至大約l〇〇g/L的範圍。當使用鋼 時’鋼含量可在大約〇·〇1至大約l〇〇g/L的範圍。鍍覆浴 中鋼的使用量在大約〇· l〇g/L至大約50g/L的範圍較佳。 當本發明之鍍覆浴用在非高速鑛覆製程時,存在鍍覆浴中 的銅含量以大約0.02g/L至大約25g/L的範圍為較佳。當 本發明之鍍覆浴用在高速鍍覆製程時,存在鍍覆浴中的銅 含量在大約1.0g/L至大約lOOg/L的範圍,以大約2 〇g/L 至大約50g/L的範圍為較佳。 • — — — — I1IIL» — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 尤其是對於銅鍍覆浴而言,鹵離子的濃度在〇mg/L至 大約1 g/L的範圍,以大約1 0nig/L至大約1 50mg/L較佳, 添加酸至該鍍覆浴得到大約〇至大約8 〇的pH範圍,以小 於1.0至大約2·0最佳。因此,酸添加量係大約1〇g/L至 大約600g/L,以大約I5g/L至大約500g/L較佳。 實施本發明之一酸性銅電鍍浴實例具有下列組成·· 銅離子(如硫酸鋼) 0·01 至 50g/L ?農硫酸 15 至 500g/L 氣離子(如氣化鈉) lppm 至 150ppm 添加劑 如所需要量添加 硫酸羥胺 0.1 至 10g/L 水 添加至1公升 同時該羧胺化合物可用來防止任何適當之金屬鍍覆基 板之鍍覆浴中添加劑的降解,該保護添加劑的羥胺化合物 以用於電鍍浴為較佳。此種電鍍浴係使用在基板上電沉積 金屬’例如印刷線路板與用於微晶片應用之矽晶圓製造, 以及電氣裝置之其他元件的製造上。電鍍製程涵蓋經由陽 本紙張尺度適用中國國豕標準(CNS)A4規格(210 X 297公餐) 1413 Surfactants and wetting agents. In addition to the additive, the remaining components of the plating bath include, for example, a metal ion source, a pH adjusting agent (for example, an inorganic acid), and a thallium ion source. Generally, the plating bath is an aqueous solution. The pH of the plating bath may range from 0 to about W, preferably from 0 to 8. Wetting agents for plating baths and the amounts used in such plating cooling are well known in the art. The inorganic acids used include, but are not limited to, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, and the like. Sulfuric acid is preferred. # 素 ionic is used as needed. The halide ions used in the plating bath include chlorides, fluorides and bromides. This dentate is added to the plating bath as a water-soluble salt. Preferably, a gaseous substance is introduced into the plating bath with sodium gasified, preferably HC1. The metal water-soluble salt supplies the source of the metal to be plated on the substrate. Such water-soluble salts include metal salts of steel, nickel, chromium, gold, silver, braided platinum, Ming, Syria, tin, money, iridium, ruthenium, metal and indium. The plating bath can also be used to plate solder. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Copper is a preferred metal to be plated using the plating bath of the present invention. Electroplated steel is preferred. Suitable steels can be in the form of any solution-soluble steel compound. Suitable steel compounds include, but are not limited to, copper compounds, steel sulfates, copper alkanesulfonates, copper alkoxides, and the like. When steel dentate is used, chloride is the preferred dentate. The preferred steel compound is copper sulfate, alkanesulfonic steel, or a mixture thereof. More preferred is copper sulfate, copper methanesulfonate or a mixture thereof. Steel compounds suitable for use in the present invention are generally commercially available or can be prepared by methods known in the literature. When copper is plated on a substrate, the pH of the plating bath can range from 0 to about 14. The plating bath preferably has a pH ranging from 0 to about 80. 91983 Bu Family Standard (CNsi_A4 Specification⑵Q χ 297 Public Love) 591124 A7 B7 V. Description of the Invention (14) The concentration distribution of metal ions in the plating bath ranges from 001 g / L to about 200 g / L 'Preferably ranges from 0.5 g / L to about 100 g / L. When steel is used, the 'steel content may be in the range of about 0.01 to about 100 g / L. The amount of steel used in the plating bath is preferably in the range of about 0.10 g / L to about 50 g / L. When the plating bath of the present invention is used in a non-high-speed mineral coating process, the copper content in the plating bath is preferably in the range of about 0.02 g / L to about 25 g / L. When the plating bath of the present invention is used in a high-speed plating process, the copper content in the plating bath is in the range of about 1.0 g / L to about 100 g / L, and in the range of about 20 g / L to about 50 g / L. Is better. • — — — — I1IIL »— (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, especially for copper plating baths, the halide concentration is 0mg / L In the range of about 1 g / L, preferably about 10 nig / L to about 150 mg / L, adding acid to the plating bath results in a pH range of about 0 to about 80, with less than 1.0 to about 2.0 optimal. Therefore, the amount of acid added is about 10 g / L to about 600 g / L, and preferably about 15 g / L to about 500 g / L. An example of an acidic copper plating bath embodying the present invention has the following composition: · Copper ions (such as sulfuric acid steel) 0 · 01 to 50 g / L · Agrosulfuric acid 15 to 500 g / L Gas ions (such as sodium gasification) lppm to 150ppm Additives such as Add the required amount of hydroxylamine sulfate 0.1 to 10g / L water to 1 liter and the carboxamide compound can be used to prevent the degradation of the additives in the plating bath of any suitable metal-plated substrate. The hydroxylamine compound of the protective additive is used for electroplating A bath is preferred. Such electroplating baths are used in the manufacture of electrodeposited metals on substrates such as printed wiring boards and silicon wafers for microchip applications, and other components of electrical devices. The electroplating process covers the size of the paper. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 meals). 14

9198S — 訂----------- ? 五、發明說明(15 ) 極、電鍍溶液與陰極通過 至所要的厚時間的電流使基板金屬鑛覆 為可溶性陽極(由鍍覆發生時會溶 解並補充該電鍍浴的金屬i赞生呀會命 溶性陽極(由惰性材料例如4鋼所組成)。或者可使用不 材科例如麵、鍍過鉑的 本發明係於鑛覆過程中以使用雷㈣=氣等所組成)。 . 使用電鍍速率與添加劑消耗(通 性陽極較佳。 用了冷性%極之製程的不溶 適用之不溶性陽極的實例為表面有鈒和麵的氧化物的 :極。此種陽極具有大約20至大約9〇莫耳百分比的銀與 其餘的组。較佳為大約6G至大約9()莫耳百分比的銀μ 餘的组。藉由在導電基材(例如欽基材)上包覆銀和组以製 造該陽極。 其他適當的陽極包括由至少約1〇莫耳百分比的νΐΗ 族金屬、至少約10莫耳百分比的電子管金屬(valvemetai) 及至y約5莫耳百分比結合金屬(bin(jer metai)所組成的陽 極。VIII族金屬包含鈷、鎳、釕、鍺、鈀、銥與鉑。電子 管金屬包含鈦、锆、铪、釩、鈮與鈕。結合金屬包含鈹、 經濟部智慧財產局員工消費合作社印製 弼、銷、鋇、銃、釔、鑭與原子序58至71的稀土元素。 以具有約5至約2 0莫耳百分比的鋇,及銥對组的比例介於 大約1/4至大約4之間的氧化物組成物特別適用。此種組 成物為大約5莫耳百分比的鋇、大約30至大約40莫耳百 分比的銥與其餘的钽。此外,不溶性陽極還可使用锇、銀 和金或其氧化物。 如上所述,本發明鍍覆浴可用於任何適合在基板上| 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公釐) 15 91983 591124 A7 B79198S — Order -----------? V. Description of the invention (15) The current passing through the electrode, plating solution and cathode to the desired thick time makes the substrate metal ore coated as a soluble anode (when plating occurs) The metal that can dissolve and replenish the electroplating bath will be a soluble anode (consisting of an inert material such as 4 steel). Alternatively, the invention can be used in the process of ore coating, such as surface and platinum plating. Using thunder ㈣ = qi, etc.). Use of plating rate and additive consumption (through anodes are preferred. Insoluble anodes that use the cold% anode process are examples of suitable insoluble anodes with oxides on the surface: electrode. This anode has about 20 to Approximately 90 mole percent of silver and the rest of the group. Preferred is about 6G to approximately 9 (mole percent of the silver μ remaining group). By coating the conductive substrate (such as a substrate) with silver and Other suitable anodes include at least about 10 mol percent of the νΐΗ group metal, at least about 10 mol percent of valve metal (valvetai), and up to about 5 mol percent of bonded metal (bin (jer metai ) Composed of anodes. Group VIII metals include cobalt, nickel, ruthenium, germanium, palladium, iridium and platinum. Tube metals include titanium, zirconium, hafnium, vanadium, niobium and buttons. Combined metals include beryllium, employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer cooperatives print scandium, pin, barium, scandium, yttrium, lanthanum and rare earth elements with atomic numbers 58 to 71. With a barium with a percentage of about 5 to about 20 moles, and a ratio of iridium to the group of about 1 / Oxides between 4 and about 4 The composition is particularly suitable. Such a composition is about 5 mole percent of barium, about 30 to about 40 mole percent of iridium and the rest of tantalum. In addition, insoluble anodes can also use rhenium, silver and gold or their oxides. As mentioned above, the plating bath of the present invention can be used on any suitable substrate | This paper size is applicable to the Chinese National Standard (CNS) A4 (210x 297 mm) 15 91983 591124 A7 B7

五、發明說明(16 ) 經濟部智慧財產局員工消費合作社印製 覆金屬的鍍覆製程。此種鍍覆製程實例包括,但不限於直 流電(DC)電鍍與脈衝電鍍。本發明鍍覆浴特別適合如印刷 線路板業之電子裝置製造及矽半導體晶圓製造中鑛覆基板 之用。 在電鍍製程中,使用欲電鍍的基板作為陰極。使用可 溶性陽極或較佳如上述之不溶性陽極作為第二電極。而採 用脈衝電鍍、DC(直流電)電鍍或兩者之結合的製程。此等 電鍍方法在本技藝中皆為已知。電流密度及電極表面電位 可根據欲電鍍的特定基板而改變。一般而言,陽極與险極 電流密度在大約1至1000 amps/ft2 (ASF)的範圍内變化。 鍍覆浴維持在大約20°C至大約110°C的溫度範圍。特定範 圍則根據被鍍的金屬而改變。此等溫度範圍在本技藝中為 眾所周知。持續電鍍一段足以形成所要厚度之沉積層的時 間。一般而言,電路板的電鍍時間為大約45分鐘至大約8 小時。就電路板製造而言,所要的厚度可能在大約〇5至 大約3.0密爾(mil)的範圍。更常見的層厚度在大約1〇至 大約1.5密爾的範圍。 垂直與水平鑛覆製程兩者皆可使用。在垂直製程中, 使基板(例如印刷電路或線路板)以垂直狀態沉入含有本發 明鍍覆浴溶液的容器中。作為陰極的基板以垂直狀態位在 至少一個陽極(較佳為不可溶陽極)的對面。將基板和陽極 連接至電源。也可調整基板與陽極間的電壓使其存在電壓 分布(voltage arrangement)以代替調整電源的電流密度。利 用輸送裝置(如泵)使鍍覆浴不斷地導入通過容器。 -IJ---------聲, (請先閱讀背面之注咅心事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公餐) 16 91983 591124 A7V. Description of the invention (16) Metal plating process printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Examples of such plating processes include, but are not limited to, direct current (DC) plating and pulse plating. The plating bath of the present invention is particularly suitable for the use of mineral-coated substrates in the manufacture of electronic devices in the printed circuit board industry and in the manufacture of silicon semiconductor wafers. In the plating process, a substrate to be plated is used as a cathode. As the second electrode, a soluble anode or preferably an insoluble anode as described above is used. Instead, pulse plating, DC (direct current) plating, or a combination of both is used. These plating methods are all known in the art. The current density and electrode surface potential can be changed according to the specific substrate to be plated. Generally, anode and sac current densities range from about 1 to 1000 amps / ft2 (ASF). The plating bath is maintained in a temperature range of about 20 ° C to about 110 ° C. The specific range varies depending on the metal being plated. These temperature ranges are well known in the art. Electroplating is continued for a time sufficient to form a deposited layer of the desired thickness. Generally, the plating time of the circuit board is about 45 minutes to about 8 hours. For circuit board manufacturing, the desired thickness may be in the range of about 0.05 to about 3.0 mils. More common layer thicknesses range from about 10 to about 1.5 mils. Both vertical and horizontal mining processes can be used. In a vertical process, a substrate (such as a printed circuit or a circuit board) is vertically sunk into a container containing a plating bath solution of the present invention. The substrate serving as the cathode is vertically opposite to at least one anode (preferably an insoluble anode). Connect the substrate and anode to a power source. Instead of adjusting the current density of the power supply, the voltage between the substrate and the anode can also be adjusted to have a voltage arrangement. The transfer bath (such as a pump) is used to continuously introduce the plating bath through the container. -IJ --------- Voice, (Please read the note on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 meals) 16 91983 591124 A7

五、發明說明(17 ) 經濟部智慧財產局員工消費合作社印制衣 第1圖表示適合利用垂直法與裝置來處理基板或工作 部件的配置實例。裝置10由容器12與含有能防止添加劑 ’肖耗之經胺的金屬鍍覆浴14所組成。該金屬鍍覆浴14例 如可用於鋼鍍覆,並含有前述成分及添加劑。 將工作部件16(陰極)(例如電路板)與陽極18(例如包 覆二氧化錶的不溶性鈦陽極)浸入金屬鍍覆浴14。將工作 部件16與陽極18電性連接至電源2〇。可利用電壓分布(未 顯示)來調整工作部件16與陽極18之間的電壓,以代替調 整電源的電流。利用例如泵的輸送裝置(未顯示)使金屬鍍 覆浴14不斷地導入第二容器或貯槽22。金屬鍍覆浴14流 過貯槽22,補充金屬鍍覆浴成分和金屬鍍覆浴14的添加 劑,例如鋼鹽、光澤劑、平整劑、羥胺(添加劑消耗抑制劑) 等。 在水平鍍覆製程中,基板在水平狀態以水平方向移動 輸送通過自動輸送裝置化的單元。利用飛濺喷嘴(splash nozzles)或氾流管(fl〇〇d pipes)使鍍覆浴由基板下方及/或 上方不斷注入。以相對該基板之一間隔位置配置陽極,並 藉由適當裝置使陽極與該鍍覆浴接觸。利用滾軸或托板來 輸送基板。 第2圖說明用來實施本發明的水平法與裝置實例。在 兩端以狹縫26形成裝置46的喷霧室24使平板28(例如欲 鑛覆金屬之電路板)能連績輸送進入並離開喷霧室24。儘 g以電路板作為說明’然而任何可利用水平裝置鑛覆的適 當表面均在本發明之範疇内。平板28藉由中間滾軸(idler 1 . Aw 訂----1----- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮) 17 91983 591124 A7 B7 五、發明說明(18 ) roller)3G支撐以箭頭方向移動。成列的滾轴刷32位於與平 板之上表面及下表面接觸的位置,而成列的陽極34位 於中間滾軸30遠離平板28端,與滾轴刷32接觸的位置。 陽極34係由任何適當的金屬,例如包覆二氧化銥的欽所形 成。儘管可使用任何適當的陽極,但以不溶性陽極如包覆 一氧化銥的鈦為較佳。陽極34係位於使陽極從上方接觸到 上排成列之滾軸刷32的位置,以及從下方接觸到下排成列 之滾轴刷32的位置。將所有陽極34以並聯方式電性連接 至供電裝置36的正極。將供電裝置36的負極連接至欲鍍 覆之平板28(陰極)。配置喷嘴38使金屬鍍覆浴4〇向下喷 霧至陽極34與滾軸刷32以及在滾軸刷32之間的平板28, 該喷嘴38係藉由管線44連接至含有金屬鍍覆浴扣之貯槽 42。箭頭表示金屬鍍覆浴流經管線44的路徑。利用汲取裝 置(未顯示)以機械連接至貯槽42的方式,將金屬鍍覆浴 從貯槽42抽出。平板28的輸送機械裝置(未顯示)係能提 供平板28連績移動通過喷霧室24,同時能保持供電裝置 36負極和平板28之間電性連接之輸送帶式的機械裝置。 消V. Description of the invention (17) Printing of clothing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 1 shows an example of a configuration suitable for processing substrates or working parts using vertical methods and devices. The device 10 is composed of a container 12 and an amine-containing metal plating bath 14 containing an additive-resistant material. This metal plating bath 14 can be used for steel plating, for example, and contains the aforementioned components and additives. A working part 16 (cathode) (for example, a circuit board) and an anode 18 (for example, an insoluble titanium anode covering a surface of a dioxide dioxide) are immersed in a metal plating bath 14. The working member 16 and the anode 18 are electrically connected to a power source 20. Instead of adjusting the power supply current, a voltage distribution (not shown) can be used to adjust the voltage between the working member 16 and the anode 18. The metal plating bath 14 is continuously introduced into the second container or tank 22 using a conveying device (not shown) such as a pump. The metal plating bath 14 flows through the storage tank 22, and supplements the metal plating bath components and additives of the metal plating bath 14, such as steel salts, gloss agents, levelling agents, hydroxylamine (additive consumption inhibitor), and the like. In the horizontal plating process, the substrate is moved in a horizontal direction in a horizontal state, and is conveyed by a unit converted by an automatic conveying device. The splash nozzles or flood pipes are used to continuously inject the plating bath from below and / or above the substrate. The anode is arranged at an interval from the substrate, and the anode is brought into contact with the plating bath by a suitable device. Use rollers or pallets to transport substrates. Fig. 2 illustrates an example of a horizontal method and a device for implementing the present invention. The spraying chamber 24 with the slits 26 forming means 46 at both ends enables the flat plate 28 (such as a metal-clad circuit board) to be continuously transported into and out of the spraying chamber 24. Wherever a circuit board is used as an illustration ', however, any suitable surface that can be covered with a horizontal device is within the scope of the present invention. Flat plate 28 with intermediate rollers (idler 1. Aw order ---- 1 ----- (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297) 17 91983 591124 A7 B7 V. Description of the invention (18) roller) The 3G support moves in the direction of the arrow. The rows of roller brushes 32 are located in contact with the upper and lower surfaces of the flat plate, and the rows of anodes 34 are located at the end of the intermediate roller 30 away from the plate 28 and in contact with the roller brushes 32. The anode 34 is formed of any suitable metal, such as arsenic coated with iridium dioxide. Although any suitable anode can be used, an insoluble anode such as titanium coated with iridium monoxide is preferred. The anode 34 is located at a position where the anode contacts the roller brushes 32 in the upper row from above and a position where the roller brushes 32 in the lower row are contacted from below. All anodes 34 are electrically connected in parallel to the positive electrodes of the power supply device 36. The negative electrode of the power supply device 36 is connected to the plate 28 (cathode) to be plated. A nozzle 38 is arranged to spray the metal plating bath 40 downward to the anode 34 and the roller brush 32 and the flat plate 28 between the roller brush 32. The nozzle 38 is connected to the metal plating bath button through a line 44 The storage tank 42. The arrow indicates the path of the metal plating bath through the line 44. The metal plating bath is withdrawn from the storage tank 42 by means of a drawing device (not shown) mechanically connected to the storage tank 42. The conveying mechanism (not shown) of the plate 28 is a conveyor-type mechanism that can provide the plate 28 to move through the spray chamber 24 in succession while maintaining the electrical connection between the negative electrode of the power supply device 36 and the plate 28. Eliminate

I 藉由防止或減少添加劑的分解量,該羥胺化合物提供 被鑛金屬增加的光澤及改善的物理機械性質。以本發明鑛 覆浴鍍覆的金屬層在結構上不會脆化或粉末化。再者,以 本發明鑛覆浴鍍覆的金屬層具有良好的電鑛能力而且沒有 看得到的鑛覆稽層。對於印刷電路與線路板中的貫穿孔而 言,此種金屬層的性質特別令人滿意。同時,由於在金屬 鑛覆過程中所選的化合物可防止或實質上減少添加劑的降 ^狀厂·中國國家標準(CNS)A4規格⑵0 x 297公髮) 18 細 591124 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(19 ) 解1因此鮮少需要補充添加劑。此外,防止添加劑分解 可容許不需鍍覆浴的汰換而使金屬鍍覆之操作持續較長的 時間。再者,由於羥胺化合物抑制添加劑降解,所以在鍍 覆過程可由裝置中省去昂貴的半透膜。而含有羥胺化合物 之鍍覆浴比不含羥胺化合物之鍍覆浴可提供更有效和經濟 的金屬鍍覆方法。因此,本發明之金屬鍍覆浴提供改進的 金屬鍍覆製程。 儘管本發明說明強調在印刷電路板業的電鍍製程,但 本發明可用於任何適合的電鍍製程。該羥胺化合物可用於 電子裝置如印刷電路與線路板、積體電路、電性接觸表面 與連接器、電解薄片、微晶片應用之矽晶圓、半導體及半 導體封裝、導線架、光電元件與光電元件封裝、及例如在 晶圓上的銲錫凸塊等製造所使用之金屬鍍覆浴。此外,該 金屬鍍覆浴可用來金屬鍍覆珠寶裝飾品、傢倶配件、汽車 零件、衛生設備等。而且該抑制添加劑消耗之化合物可用 在廢棄物處理方法上。 下列實施例用來更適切地說明本發明,但並非意欲限 制本發明之範疇。 [實施例] 實施例1 在電鍍浴申利用荷爾電池(Hull Cell)測定光澤劑消 耗。所使用的各荷爾電池皆為流體動力學控制之荷爾電池 (HCHC)。該鍍覆浴係含有下列組成的銅鑛覆浴: 91983 1 I --------訂---------. (請先閱讀背面之注意事項再填寫本頁) 591124 A7 五、發明說明(20 )I By preventing or reducing the amount of decomposition of the additive, the hydroxylamine compound provides increased gloss and improved physical and mechanical properties by the mineral metal. The metal layer plated with the ore bath of the present invention is not structurally brittle or powdered. Furthermore, the metal layer plated with the ore bath of the present invention has a good electric ore capacity and no visible ore cover. The properties of this metal layer are particularly satisfactory for through-holes in printed circuits and wiring boards. At the same time, since the compounds selected during the metal cladding process can prevent or substantially reduce the drop of additives ^ China National Standard (CNS) A4 specification ⑵0 x 297 issued by the public) 18 591124 Staff Consumption of the Ministry of Economic Affairs Cooperative printed A7 V. Description of invention (19) Solution 1 Therefore, supplementary additives are rarely needed. In addition, preventing the decomposition of the additives allows the metal plating operation to be continued for a longer period of time without the need for replacement of the plating bath. Furthermore, since the hydroxylamine compound inhibits the degradation of the additive, an expensive semi-permeable film can be omitted from the device during the plating process. A plating bath containing hydroxylamine compounds provides a more effective and economical method of metal plating than a plating bath containing no hydroxylamine compounds. Therefore, the metal plating bath of the present invention provides an improved metal plating process. Although the description of the present invention emphasizes the plating process in the printed circuit board industry, the present invention can be applied to any suitable plating process. The hydroxylamine compound can be used in electronic devices such as printed circuits and circuit boards, integrated circuits, electrical contact surfaces and connectors, electrolytic wafers, silicon wafers for microchip applications, semiconductors and semiconductor packages, lead frames, optoelectronic components and optoelectronic components Metal plating baths for packaging and manufacturing of solder bumps on wafers, for example. In addition, the metal plating bath can be used for metal plating of jewelry decorations, furniture accessories, automobile parts, sanitary equipment, and the like. In addition, the compound that suppresses the consumption of additives can be used in waste disposal methods. The following examples are provided to better illustrate the invention, but are not intended to limit the scope of the invention. [Example] Example 1 In a plating bath, a Hull cell was used to measure the gloss agent consumption. Each of the Hor batteries used is a hydrodynamically controlled Hor battery (HCHC). The plating bath contains copper ore covering bath of the following composition: 91983 1 I -------- Order ---------. (Please read the precautions on the back before filling this page) 591124 A7 V. Description of Invention (20)

第一個荷爾電池試驗具有可溶性鋼陽極並以銅包覆破 璃環氧樹脂平板作為陰極。所使用之第二個及第三個荷爾 電池具有不溶性二氧化銥陽極代替可溶性鋼陽極。除上述 鍍覆浴組成之外,第三個荷爾電池含有約1§乩的硫酸羥 胺。使銅鍍覆在該銅包覆玻璃環氧樹脂陰極上。以鍍鋼表 面的無光澤百分比測定光澤劑的消耗。在本發明範疇内所 疋義的無光澤表面意指在陰極上鍵覆的鋼具有無光澤或無 反射的表面外觀。 每個荷爾電池試驗在大約3 amp下操作約2分鐘,然 後操作約10分鐘。大約2分鐘及大約1 〇分鐘之後,測定 鍍銅表面上的無光澤百分比。因此,利用可溶性銅陽極進 行電鏡’在大約2分鐘至大約10分鐘之間消耗非常少的光 澤劑。 在第二個試驗中,使用二氧化銥的不溶性陽極,大約 2分鐘之後,大約30%的銅金屬失去光澤。在大約1〇分鐘 之後,幾乎全部的銅金屬都失去光澤。因此,利用不溶性 二氧化銥陽極進行電鍍大約10分鐘之後,幾乎消耗掉全部 的光澤劑。 在第三個試驗中,將大約l.〇mg/L的硫酸羥胺添加到 銅鍍覆浴作為光澤劑消耗抑制劑。在大約2分鐘之後及大 約10分鐘之後’鑛在陰極上的銅,其無光澤表面均約為相 木紙張尺度適用中國國家標準(CNS)A4規格⑵G X 297公爱) 20^--- -----------丨·# (請先閱讀背面之注音?事項再填寫本頁} --訂--------- 00 經濟部智慧財產局員工消費合作社印製 591124 A7 B7 21 1、發明說明( 同百分比。因此,在大約2分鐘至大約1 〇分鐘之間消耗卜 常少的光澤劑。 與可溶性銅陽極相比,當使用不溶性陽極時 的消耗特別會造成問題。然而,當使 办 萍领 酸羥胺添加到銅鍍覆浴時,可抑制 不/合性陽極而將硫 制光澤劑的消耗。 --------i (請先閱讀背面之注意事項再填寫本頁) ? 經濟部智慧財產局員工消費合作社印製The first Hor battery test had a soluble steel anode and a copper-coated glass epoxy resin plate as the cathode. The second and third Hall batteries used have insoluble iridium dioxide anodes instead of soluble steel anodes. In addition to the plating bath composition described above, the third Hor battery contains approximately 1 乩 羟 of hydroxylamine sulfate. Copper was plated on the copper-clad glass epoxy cathode. Consumption of the gloss agent was measured as the percentage of matt steel surface. A matte surface within the meaning of the present invention means that the steel bonded to the cathode has a matte or non-reflective surface appearance. Each horror battery test is operated for about 2 minutes at about 3 amp, and then for about 10 minutes. After about 2 minutes and about 10 minutes, the percentage of matt on the copper-plated surface was measured. Therefore, using a soluble copper anode for electron microscopy 'consumes very little polishing agent between about 2 minutes and about 10 minutes. In a second test, using an insoluble anode of iridium dioxide, after about 2 minutes, about 30% of the copper metal lost its luster. After about 10 minutes, almost all of the copper metal was tarnished. Therefore, after plating for about 10 minutes using an insoluble iridium dioxide anode, almost all of the gloss agent is consumed. In a third experiment, approximately 1.0 mg / L of hydroxylamine sulfate was added to a copper plating bath as a gloss agent consumption inhibitor. After about 2 minutes and about 10 minutes' copper on the cathode, the matte surface is about the photo paper size Applicable to Chinese National Standard (CNS) A4 specification (G X 297 public love) 20 ^ ---- ---------- 丨 · # (Please read the phonetic on the back? Matters before filling out this page} --Order --------- 00 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 591124 A7 B7 21 1. Description of the invention (same percentage. Therefore, it usually consumes a little brightener between about 2 minutes and about 10 minutes. Compared with soluble copper anodes, the consumption when using insoluble anodes will cause especially Question. However, when hydroxylamine is added to the copper plating bath, the consumption of sulfur-based gloss agents can be suppressed by the incompatible anode. -------- i (Please read the Please fill in this page again for attention) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

本紙張尺度適用中國國家標準(CNS)A4規格(210 XThis paper size applies to China National Standard (CNS) A4 (210 X

Claims (1)

H3 第90129377號專利申請案 申請專利範圍修正本 (92年7月14日) 1· -種金屬鑛覆浴,包括抑制添加劑消耗的化合物,該 化合物包括該鑛覆浴之0.001§化至i〇〇g/L,且具有式·· (R^NHR^oh)^ 其中及R2各獨立為氫、Ci至q烷基,n為ι 或 h 當 n 為!時,χ 為 HS(V、H2p(v、n…、f、 C1·、Br或Ι·,當n為2時,χ為s〇,;及銅、金、 銀、鈀、鉑、鈷、鎘、鉻、鎳、鉍、銦、錫、铑、鉛、 釕、銥或其合金的金屬鹽類。 2·如申請專利範圍第1項之金屬鍍覆浴,其中該 J 、6 烷基包括曱基、乙基、丙基、異丙基、丁基、異丁基、 第二丁基、第三丁基、戊基、異戊基、新戊基、第三 戊基、己基、異己基、3-曱基戊基、二甲基丁基, 或2,3-二甲基丁基。 經濟部中央標準局員工福利委員會印製 3 ·如申請專利範圍第]項之金屬鍍覆浴,其中抑制添加 劑消耗物化合物包括硫酸羥胺、硝酸羥胺、氣化羥胺 或其混合物。 4. 如申請專利範圍第1項之金屬鍍覆浴,其中該抑制添 加劑消耗的化合物包括該鍍覆浴之〇·01 g/L至 20.0g/L〇 5. 如申請專利範圍第1項之金屬鍍覆浴,復包括含有先 澤劑、平整劑、硬化劑、濕潤劑、屐性改質劑、延性| 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1 91983 改質劑、沉積改暂_ '貝Μ或抑制劑的添加劑。 6 ·如申請專利範圍笙 固弟5項之金屬鍍覆浴,其中該光澤劑 u、有下式的化合物:H〇3-S-Rn-SH ; H〇3S-Rn-S-S〇3H(其中R11為I至〔6烷基或芳基);或Η〇γ S Ar SC^H(其中&為苯基或萘基,該烷基及芳 基可為未經取代或經烷基、鹵素或烷氧基取代)。 ·- 7·=申巧專利乾圍第6項之金屬鐘覆浴,其中該光澤劑 i括3-^基-丙基磺酸鈉鹽、2_毓基-乙烷磺酸鈉鹽、 一&化雙石頁酸丙基、二甲基二硫代胺基甲酸(3-磺 酉文丙基㈣納鹽、(〇_乙基二硫代碳酸根)-S-(3-磺酸丙 基 >酯鉀鹽、3_[(胺基_亞胺曱基)-硫代]-1-丙烷磺酸' 3-(2-苯并噻唾基硫代)丙烷磺酸鈉鹽或其混合物。 % 8. 如申請專利範圍第5項之鍍覆浴,其中該平整劑包括 經烧基化之聚稀亞胺、有機磺酸基績酸鹽、吩哄類染 料、吩畊偶氮染料或其混合物。 經濟部中央標準局員工福利委員會印制π 9. 如申請專利範圍第5項之鍍覆浴,其中該光澤劑包括 3-(笨并噻唑基-2-硫代)-丙基石黃酸鈉鹽、3-毓基丙烧-1-磺酸鈉鹽、伸乙基二硫代二丙基磺酸鈉鹽、雙-(對-磺 酸苯基)-二硫化二鈉鹽、雙_(ω-續酸丁基)-二疏化二鈉 鹽、雙-(ω-確酸經丙基)-二硫化二納鹽、雙-(ω-績酸丙 基)-二硫化二鈉鹽、雙-(ω-磺酸丙基)-硫化二鈉鹽、曱 基-(ω-磺酸丙基)鈉鹽、曱基-(ω-磺酸丙基)-三硫化二鈉 鹽、0-乙基-二硫代碳酸-S-(o-磺酸丙基)_酯、硫代羥 乙酸鉀鹽、硫代磷酸-0-乙基··雙-(ω-磺酸丙基)-醋二納 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) H3 經濟部中央標準局員工福利委員會印製 鹽、硫代填酸-三(ω-續酸丙基)-酯三鈉鹽或其混合物。 10·如申請專利範圍第5項之鍍覆浴,其中該抑制劑包括 羧甲基纖維素、壬基苯酚聚乙二醇醚、辛二醇雙_(聚 烧二醇醚)、辛醇聚烧二醇醚、油酸聚乙二醇酯、聚乙 烯丙二醇、聚乙二醇、聚乙二醇二曱醚、聚環氧丙二 醇、聚丙一醇、聚乙稀醇、聚環氧乙烧、硬脂酸聚乙 二醇酯、硬脂醇聚乙二醇醚,或其混合物。 11 ·如申請專利範圍第1項之金屬鏡覆浴,其中該鑛覆浴 具有從0至14.0的pH值。 1 2.如申請專利範圍第11項之金屬鍍覆浴,其中該鍍覆浴 具有從0至8.0的pH值。 1 3 · —種銅金屬電鍍浴,包括銅鹽及抑制添加劑消耗的化 合物,該化合物包括該鍍覆浴之〇.〇〇lg/L至i〇〇g/L, 且具有式: (R'-NHR'-OH)^ 其中R】及R2各獨立為氫、q至C6烷基,η為1 或 2,當 η 為 1 時,X 為 hs〇4-、Η2Ρ〇/、Ν〇3·、F、 Cl·、Br 或 Γ,當 η 為 2 時,X 為 S042·。 14. 如申請專利範圍第13項之銅金屬電鍍浴,其中該Ci 至C6烷基包括甲基、乙基、丙基、異丙基、丁基、異 丁基、第二丁基、第三丁基、戊基、異戊基、新戊基、 第三戊基、己基、異己基、3·甲基戊基、2,2-二曱基丁 基,或2,3-二甲基丁基。 15. 如申請專1範圍第1 3項之銅金屬電鍍浴,其中該抑制 ^紙張尺度適用中一國(CNS) A4規格(210 X 297公釐) " H3 添加劑消耗的化合物包括碎 羥胺或其混合物。 :胺、确酸羥胺 '氣化 1 6·如申請專利範圍第1 3項之鋼八思 添加劑消耗卜人榀θ ,主屬電鍍浴,其中該抑制 齊Μ耗的化合物包括該 2〇.〇g/]L。 是合之 〇.〇lg/L 至 17·如申請專利範圍第13項之銅金 本、、里女, ^電錢浴,復包括令右 m 先澤4、平整劑、硬化劑、濕潤 性改暂1&Ϊ 展丨生改質、延 18 I質刻、沉積改質劑或抑制劑的添加劑。 8·如申請專利範圍第n項之 ,自;te n 、.金屬電鍍浴,其中該光澤 =包括具有下列結構式的化合物:叫s_r"别; '3S'R11-S^ 基);或H〇3S_Ar_S_S_Ar_SQ3H(其中^為苯基或蔡基, 該烧基及芳基可為未經取代或經烧基、函素或烧氧基 取代)。 % 19·如申請專利範圍第17項之銅金屬電鍍浴,其中該平整 劑包括經烷基化之聚烯亞胺、有機磺酸基磺酸鹽、吩 畊類染料、吩啡偶氮染料或其混合物。 經濟部中央標準局員工福利委員會印製 20‘如申请專利範圍第17項之銅金屬電鍍浴,其中該銅金 屬鹽包括銅_化物、銅硫酸鹽類、烷磺酸銅、醇磺酸 銅,或其混合物。 2 1 ·如申請專利範圍第1 3項之銅金屬電鍍浴,其中該鍍覆 浴具有從0至8.0的pH值。 22. —種在基板上鍍覆金屬的方法,包括··使該基板與金 屬鐘覆浴接觸;並施加1ASF至I000ASF的電流密度 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591124 至該鍍覆浴使基板上沉積金屬;該鍍覆浴包 金、銀、鈀、鉑、鈷、鎘、鉻、鎳、鉍、銦、錫、:、 銥釕、鉛或其合金的金屬鹽,及抑制添加劑消 化合物,該化合物包括該鍍覆浴之〇 〇〇1§化至的 且具有式: §/L J (R1-NHR2^〇H)nX 。其中R〖及R2各獨立為氫、(^至Ce烷基,η為1 或 2,當 η 為 i 時,χ 為 HS(V ' Η2ρ(ν、ν; Cl、Br-或 r,當 η 為 2 時,χ 為 s〇42-。 、 23·如申請專利範圍第22項的方法,其中該^至C 包括甲基、乙基、丙基、異丙基、丁基、異丁基广: —丁基、第三丁基、戊基、異戊基、新戊基、第三戊 基、己基、異己基、3_甲基戊基、2,2-二甲基丁二 2,3-二曱基丁基。 3 % 24,如申請專利範圍第22項的方法,其中該抑制添加劑消 耗的化合物包括硫酸羥胺、硝酸羥胺、氯化羥胺 混合物。 〃 經濟部中央標準局員工福利委員會印製 25·如申請專利範圍第22項的方法,復包括光澤劑、平整 劑、硬化劑、濕潤劑、展性改質劑、延性改質劑、: 積改質劑、抑制劑或其混合物。 J 26·如申请專利範圍第22項的方法,其中該光澤劑包括具 有下式的化合物:H〇3S-R】i-SH ; H〇3S-Rn-S-S-RH-s〇3h(其中r】i為Ci至q烷基或芳基);或h〇3_a「s· S_Ar-S03H(其中Ar為笨基或萘基,該烷基及芳基可為 本紙張尺度適用中國國豕標準(CNS ) A4規格(21〇 X 297公髮1 ---'— ^^1124 未經取代或經烷基、鹵素或烷氧基取代)。 27.如申請專利範圍第22項的方法,其中該基板包括印刷 線路板與積體電路、電性接觸表面、連接器、電解薄 片、矽晶圓、半導體、導線架、光電元件、晶圓上之 銲錫凸塊、裝飾品、衛生設備等。 8·種在基板上電錢銅金屬的方法,包括:使該基板與 =金屬鍍覆浴接觸;並施加丨八盯至1〇〇〇ASF的電^ 山度至4鍍後洛使基板上沉積金屬;該銅金屬錢覆浴 包含銅鹽及抑制添加劑消耗的化合物,該化合物包括 該鍍覆浴之0.001g/L至1〇〇g/L,且具有式: (R'-NHR^oh)^ 其中R1及R2各獨立為氫、或匕至q烷基,n為 1 或 2,當 η 為!時,χ 為 HS(V、h2P〇4·、N(V、F、 Cl、Br_或 I·,當 時,χ 為 so,。 % 29·如申凊專利範圍第28項的方法,其中該q至C6烷基 包括甲基、乙基、丙基、異丙基、丁基、異丁基、第 一丁基、第二丁基、戊基、異戊基、新戊基、第三戊 經濟部中央標準局員工福利委員會印製 基己基、異己基、3 -曱基戊基、2,2-二甲基丁基,或 2,3-二甲基丁基。 30.如申請專利範圍第28項的方法,其中該抑制添加劑消 耗的化合物包括硫酸羥胺、硝酸羥胺、氣化羥胺或其 混合物。 本紙張尺度適— 用中國國家料(CNS) A4規袼(21Gx 297&t)· 3 1.如申凊專利範圍第2 8項的方法,復包括光澤劑、平整 劑、硬化劑、濕潤劑、展性改質劑、延性改質劑、沉 91983 H3 積改質劑、抑制劑或其混合物。 如申凊專利範圍第3 1項的方法,其中該光澤劑包括具 有下式的化合物:H03s-Rn-SH ; HC^S-RH-S-S-R1、 s〇3H(其中rii為^至q烷基或芳基或η〇3·Αγ·ι S:Al"S〇3H(其中Ar為苯基或萘基,該CJ C6烷基及 方基可為未經取代或經烷基、鹵素或烷氧基取代)。 33·如申請專利範圍第28項的方法,其中該基板包括印刷 線路板、積體電路、電性接觸表面、連接器、電解薄 夕曰曰圓半導體、導線架、光電元件、晶圓上之 銲錫凸塊、裝飾品、衛生設備等。 34 -種用於金屬鍍覆浴的裝置’包括電性連接至陽極與 陰極之電源,使電流能通過該陽極與該陰極,技 與該陰極係與金屬鍍覆浴接觸,以致當 Λ 〇 全厲士供梦、八 ’、作該電源時, 金屬由鍍覆 >合鍍覆到陰極上,該金屬 卞 鉑、鈷、鎘、鉻、鎳、鉍、 銅、金、銀m…:又覆冷包含金屬 銦、錫 經濟部中央標準局員工福利委員會印制π 铑、鉛、釕、銥或其合金的鹽,及抑 化合物,該化合物包括該鍍覆浴之〇〇1…二^岣耗的 且具有式: 至2〇.〇g/L (R'-nhr^oh)^ 為 其中R1及R2各獨立為氫、或^至c 一 1或2,當11為1時,X為HS(V、H 6烷基,n F· 2ru4'、κη . CT、Br·或Γ,當η為2時,χ為s〇 35 ·如申請專利範圍第34項之裝置,其φ # 、τ。豕金屬紗 包括光澤劑、平整劑、硬化劑、濕潤劑、展k a覆冷復 本紙張尺度適用中國國家標準(CNi).A4規格(21^x 297公爱)〜〜質劑、 DV11Z4 3 6 Γί = 積改質劑、抑制劑或其混合物。 :祀圍第34項之裝置 或可溶性陽極。 q个/合I王 37. 如申請專利範圍第36項之 括金屬始、錄、釘 、、中該不溶性陽極包 ^ 釕、铑、鈀、銥式 38. 如申請專利範圍第37項之裝置,—’ ^ 包括金屬鈥、#L、# 4 "中該不溶性陽極復 鉛給、飢、銳或纽。 39·如申請專利範圍第列項之 包括鈹、約、銘、鋇、銳二其中該不溶性陽極復 4。·如申請專利範圍第36項之裝置二或稀土元:。… 括具有二氧化銥外層的鈕。、’、3不命性陽極包 41·如申請專利範圍第34項之 板、積體電路、電性接觸㈠ 陰極包括線路 电&接觸表面、連接器 矽晶圓、半導體、導線力 鮮'專片 .飾品:衛生設備等 先電_、銲錫凸塊、袭 經濟部中央標準局員工福利委員會印製H3 No. 90129377 Patent Application Amendment to the Patent Scope (July 14, 1992) 1. A metal ore bath, including a compound that suppresses the consumption of additives, which includes 0.001§ of the ore bath to i. 〇g / L, and has the formula (R ^ NHR ^ oh) ^ where and R2 are each independently hydrogen, Ci to q alkyl, n is ι or h when n is! Χ is HS (V, H2p (v, n ..., f, C1 ·, Br, or Ι ·, when n is 2, χ is so, and copper, gold, silver, palladium, platinum, cobalt, Metal salts of cadmium, chromium, nickel, bismuth, indium, tin, rhodium, lead, ruthenium, iridium or their alloys. 2. The metal plating bath of item 1 in the patent application scope, wherein the J, 6 alkyl group includes Fluorenyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, third butyl, pentyl, isopentyl, neopentyl, third pentyl, hexyl, isohexyl , 3-fluorenylpentyl, dimethylbutyl, or 2,3-dimethylbutyl. Printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs. Wherein, the compounds that suppress the consumption of additives include hydroxylamine sulfate, hydroxylamine nitrate, vaporized hydroxylamine, or mixtures thereof. 4. For example, the metal plating bath of the scope of patent application, wherein the compounds that suppress the consumption of additives include the plating bath. 01 g / L to 20.0g / L〇5. For example, the metal plating bath in the scope of patent application No. 1 includes: containing pre-sizing agent, levelling agent, hardener, wetting agent, Natural modifiers, ductility | This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 1 91983 Modifiers, deposition changes _ 'Mell or inhibitor additives. 6 · If you apply The scope of patent is 5 metal plating baths of Shenggudi, in which the glossing agent u and the compound having the formula: H〇3-S-Rn-SH; H〇3S-Rn-SS〇3H (where R11 is 1 to [6 alkyl or aryl); or Η〇γ S Ar SC ^ H (where & is phenyl or naphthyl, the alkyl and aryl may be unsubstituted or alkyl, halogen or alkoxy (Substitute).-7 · = Shenqiao's patent No. 6 metal bell bath, in which the gloss agent i includes 3-^-propyl sulfonic acid sodium salt, 2_yl-sulfonic acid sodium salt Salt, mono- & bis-stilbene propyl, dimethyl dithiocarbamic acid (3-sulfomethylpropylsulfonium salt, (0_ethyldithiocarbonate) -S- (3 -Propylsulfonic acid> ester potassium salt, 3 _ [(amino_iminofluorenyl) -thio] -1-propanesulfonic acid '3- (2-benzothiasialylthio) propanesulfonic acid sodium Salt or mixture thereof.% 8. The plating bath of claim 5 in which the leveling agent includes a calcined base. Polyimide, organic sulfonic acid salts, phenoxine dyes, phenoxazo dyes or mixtures thereof. Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs. Bath-covering, wherein the glossing agent includes 3- (benzothiazolyl-2-thio) -propyl lutein sodium salt, 3-cyanopropane-1-sulfonic acid sodium salt, and ethylenedithiodi Propylsulfonic acid sodium salt, bis- (p-sulfonic acid phenyl) -disodium disulfide salt, bis_ (ω-contanoic acid butyl) -dissociated disodium salt, bis- (ω-ceramic acid Propyl) -di-nano-sulfide, bis- (ω-succinic acid propyl) -disodium disulfide, bis- (ω-sulfopropyl) -disodium sulfide, fluorenyl- (ω-sulfo Acid propyl) sodium salt, fluorenyl- (ω-sulfopropyl) -disodium trisulfide, 0-ethyl-dithiocarbonate-S- (o-sulfopropyl) _ester, thio Potassium glycolate, phosphorothioate-0-ethyl · · bis- (ω-sulfopropyl) -diacetate This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) H3 Ministry of Economy Central Standards Bureau Staff Welfare Committee printed salt, thio-acid-tris (ω-contanoic acid propyl) -ester trisodium Or mixtures thereof. 10. The plating bath according to item 5 of the patent application scope, wherein the inhibitor includes carboxymethyl cellulose, nonylphenol polyethylene glycol ether, octanediol bis (polyalkylene glycol ether), octanol polymer Burning glycol ethers, polyethylene glycol oleate, polypropylene glycol, polyethylene glycol, polyethylene glycol dimethyl ether, polypropylene oxide glycol, polypropylene glycol, polyvinyl alcohol, polyethylene oxide, Polyethylene glycol stearates, polyethylene glycol ethers of stearyl alcohol, or mixtures thereof. 11. The metal mirror covering bath according to item 1 of the patent application scope, wherein the mineral covering bath has a pH value from 0 to 14.0. 1 2. The metal plating bath according to item 11 of the patent application scope, wherein the plating bath has a pH value from 0 to 8.0. 1 ·· A copper metal electroplating bath including a copper salt and a compound for suppressing consumption of additives, the compound including 0.0000 lg / L to 100 g / L of the plating bath, and having a formula: (R ' -NHR'-OH) ^ where R] and R2 are each independently hydrogen, q to C6 alkyl, η is 1 or 2, and when η is 1, X is hs〇4-, Η2Ρ〇 /, NO3 · , F, Cl ·, Br or Γ, when η is 2, X is S042 ·. 14. The copper metal plating bath as claimed in claim 13, wherein the Ci to C6 alkyl group includes methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, third Butyl, pentyl, isopentyl, neopentyl, tertiary pentyl, hexyl, isohexyl, 3.methylpentyl, 2,2-diamidylbutyl, or 2,3-dimethylbutyl base. 15. For the application of copper metal electroplating baths in the scope of item 1 to item 13 of the scope, where the paper size is applicable to the China One Country (CNS) A4 specification (210 X 297 mm) " H3 additive consumption compounds include broken hydroxylamine or Its mixture. : Amine, Hydroxylamine's Gasification 16 · As in the patent application scope No. 13 of the steel Ba Si additive consumption 榀 榀 θ, mainly belongs to the electroplating bath, wherein the compound that inhibits Qi consumption includes the 2.0%. g /] L. It is in the range of 0.01g / L to 17. If you apply for copper, gold, copper, copper, copper, etc. in the scope of the patent application No. 13, ^ Electric money bath, including the right side of the first 4, leveling agent, hardener, wetting Temporary 1 & Ϊ Development 丨 additives for biodegradation, extension of 18 I quality, deposition of modifiers or inhibitors. 8 · As for the nth item in the scope of patent application, since; te n,. Metal plating bath, where the gloss = includes compounds having the following structural formula: called s_r "other; '3S'R11-S ^ group); or H 〇3S_Ar_S_S_Ar_SQ3H (where ^ is a phenyl group or a Czeki group, and the alkynyl group and the aryl group may be unsubstituted or substituted by an alkynyl group, a halogen group, or an alkoxy group). % 19. The copper metal electroplating bath according to item 17 of the application, wherein the leveling agent includes alkylated polyimide, organic sulfonate, phenocyanine dye, phenorphine azo dye or Its mixture. The Bureau of Staff Welfare of the Central Bureau of Standards of the Ministry of Economic Affairs printed a 20 'copper metal plating bath such as the 17th in the scope of patent application, where the copper metal salt includes copper compounds, copper sulfates, copper alkanesulfonate, copper alkoxide, Or a mixture thereof. 2 1 · The copper metal plating bath according to item 13 of the patent application scope, wherein the plating bath has a pH value from 0 to 8.0. 22. —A method of plating metal on a substrate, including: making the substrate in contact with a metal bell bath; and applying a current density of 1ASF to I000ASF This paper is sized to Chinese National Standard (CNS) A4 (210 X 297) 591124 to the plating bath to deposit metal on the substrate; the plating bath includes gold, silver, palladium, platinum, cobalt, cadmium, chromium, nickel, bismuth, indium, tin, iridium, ruthenium, lead or its The metal salt of the alloy, and the inhibitor additive compound, the compound includes the metal oxide of the plating bath and has the formula: § / LJ (R1-NHR2 ^ OH) nX. Where R and R2 are each independently hydrogen, (^ to Ce alkyl, η is 1 or 2, when η is i, χ is HS (V 'Η2ρ (ν, ν; Cl, Br- or r, when η When it is 2, χ is so42-. 23. The method according to item 22 of the application, wherein the ^ to C include methyl, ethyl, propyl, isopropyl, butyl, and isobutyl. : —Butyl, third butyl, pentyl, isopentyl, neopentyl, third pentyl, hexyl, isohexyl, 3-methylpentyl, 2,2-dimethylbutane 2,3 -Difluorenyl butyl. 3% 24. The method according to item 22 of the patent application, wherein the compound that suppresses the consumption of additives includes hydroxylamine sulfate, hydroxylamine nitrate, and a mixture of hydroxylamine chlorides. 印 Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs Preparation 25. The method according to item 22 of the scope of patent application, which includes a gloss agent, a leveling agent, a hardener, a wetting agent, a ductile modifier, a ductile modifier, a product modifier, an inhibitor, or a mixture thereof. J 26. The method of claim 22, wherein the glossing agent includes a compound having the formula: H〇3S-R] i-SH; H〇3S-Rn-SS-RH-s 3h (where r) i is Ci to q alkyl or aryl group; or h〇3_a "s · S_Ar-S03H (where Ar is benzyl or naphthyl group, the alkyl group and aryl group can be used for this paper standard China) National Standard (CNS) A4 specification (21 × X 297 issued 1 ---'- ^^ 1124 unsubstituted or substituted with alkyl, halogen or alkoxy). Method, wherein the substrate includes printed circuit boards and integrated circuits, electrical contact surfaces, connectors, electrolytic wafers, silicon wafers, semiconductors, lead frames, optoelectronic components, solder bumps on wafers, decorations, sanitary equipment Etc. 8. A method for electroplating copper metal on a substrate, comprising: bringing the substrate into contact with a metal plating bath; and applying an electrical power of 10,000 ASF to 4,000 ASF to 4 Å after plating A metal is deposited on the substrate; the copper metal bath includes a copper salt and a compound that suppresses consumption of additives, the compound includes 0.001 g / L to 100 g / L of the plating bath, and has the formula: (R'-NHR ^ oh) ^ where R1 and R2 are each independently hydrogen, or d to qalkyl, n is 1 or 2, when η is!, χ is HS (V, h2P04, N ( V, F, Cl, Br_, or I. At that time, χ is so.% 29. The method of claim 28 in the patent scope, wherein the q to C6 alkyl group includes methyl, ethyl, propyl, Isopropyl, butyl, isobutyl, first butyl, second butyl, pentyl, isopentyl, neopentyl, tertiary pentamyl, etc. , 3 -fluorenylpentyl, 2,2-dimethylbutyl, or 2,3-dimethylbutyl. 30. The method of claim 28, wherein the compound that inhibits the consumption of the additive includes hydroxylamine sulfate, hydroxylamine nitrate, vaporized hydroxylamine, or a mixture thereof. The size of this paper is suitable-using China National Materials (CNS) A4 Regulation (21Gx 297 & t) · 3 1. The method of item 28 of the patent scope, including gloss agent, leveling agent, hardener, wetting agent , Malleable modifier, ductile modifier, Shen 91983 H3 product modifier, inhibitor or mixture thereof. For example, the method of claim 31 in the patent scope, wherein the gloss agent includes a compound having the formula: H03s-Rn-SH; HC ^ S-RH-SS-R1, s〇3H (where rii is ^ to q alkane Or aryl or η〇3 · Αγ · ι S: Al " S〇3H (where Ar is phenyl or naphthyl, the CJ C6 alkyl and square groups may be unsubstituted or via alkyl, halogen or alkane Oxygen substitution) 33. The method of claim 28, wherein the substrate includes a printed circuit board, an integrated circuit, an electrical contact surface, a connector, an electrolytic thin semiconductor, a lead frame, and a photovoltaic element , Solder bumps on the wafer, decorations, sanitary equipment, etc. 34-A device for a metal plating bath 'includes a power source electrically connected to the anode and the cathode so that a current can pass through the anode and the cathode. The cathode system is in contact with the metal plating bath, so that when Λ 〇 is used for power supply, the metal is plated on the cathode by plating> the metal is platinum, cobalt, cadmium , Chrome, nickel, bismuth, copper, gold, silver, m ...: again covered with indium and tin containing metals. Member of the Central Standards Bureau of the Ministry of Economic Affairs The Welfare Committee prints π rhodium, lead, ruthenium, iridium, or alloy salts thereof, and compounds, which include 001 ... two ^ 岣 of the plating bath and have the formula: to 2.0 g / L (R'-nhr ^ oh) ^ is where R1 and R2 are each independently hydrogen, or ^ to c-1 or 2; when 11 is 1, X is HS (V, H 6 alkyl, n F · 2ru4 ', Κη. CT, Br ·, or Γ, when η is 2, χ is s35. · As for the device in the scope of the patent application No. 34, its φ #, τ. 豕 metal yarn includes gloss, leveling agent, hardening Agent, humectant, and cold-coated duplicate paper size applicable to Chinese national standard (CNi) .A4 specification (21 ^ x 297 public love) ~ ~ quality agent, DV11Z4 3 6 Γί = product modifier, inhibitor or its Mixtures: devices or soluble anodes surrounding item 34. qpieces / King I. 37. For example, the insoluble anodes covered by item 36 of the patent application scope include metal, metal, nails, ruthenium, rhodium, palladium Iridium type 38. If the device in the 37th scope of the patent application is applied, “'^ includes metals”, #L, # 4 " The insoluble anode is re-leaded, hungry, sharp, or new. 39. If applied The insoluble anodes include the beryllium, titanium, aluminum, barium, sharp, etc. The insoluble anode compound 4. For example, the second device or the rare earth element of the 36th scope of the patent application: ... includes a button with an outer layer of iridium dioxide. ", 3, Indestructible anode package 41. For example, board 34, integrated circuit, electrical contact of the scope of patent application. The cathode includes line electricity & contact surface, connector silicon wafer, semiconductor, and wire. ' Special film. Jewelry: sanitary equipment and other electricity_, solder bumps, printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs
TW090129377A 2001-10-04 2001-11-28 Plating bath and method for depositing a metal layer on a substrate TW591124B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/971,300 US20030066756A1 (en) 2001-10-04 2001-10-04 Plating bath and method for depositing a metal layer on a substrate

Publications (1)

Publication Number Publication Date
TW591124B true TW591124B (en) 2004-06-11

Family

ID=34063699

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090129377A TW591124B (en) 2001-10-04 2001-11-28 Plating bath and method for depositing a metal layer on a substrate

Country Status (2)

Country Link
KR (1) KR20030029004A (en)
TW (1) TW591124B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101914784A (en) * 2010-08-30 2010-12-15 江苏凯力克钴业股份有限公司 Method for producing electrodeposition cobalt
CN103290438A (en) * 2013-06-25 2013-09-11 深圳市创智成功科技有限公司 An electro-copper plating solution and an electroplating method for wafer level packaging
CN109055978A (en) * 2018-10-25 2018-12-21 南昌航空大学 A method of the electrochemistry selective recovery metallic nickel from ferronickel compound wastewater

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115058741A (en) * 2022-06-30 2022-09-16 金川集团股份有限公司 Additive for producing electrodeposited cobalt

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101914784A (en) * 2010-08-30 2010-12-15 江苏凯力克钴业股份有限公司 Method for producing electrodeposition cobalt
CN101914784B (en) * 2010-08-30 2013-01-09 江苏凯力克钴业股份有限公司 Method for producing electrodeposited cobalt
CN103290438A (en) * 2013-06-25 2013-09-11 深圳市创智成功科技有限公司 An electro-copper plating solution and an electroplating method for wafer level packaging
CN103290438B (en) * 2013-06-25 2015-12-02 深圳市创智成功科技有限公司 For copper electroplating solution and the electro-plating method of wafer-level packaging
CN109055978A (en) * 2018-10-25 2018-12-21 南昌航空大学 A method of the electrochemistry selective recovery metallic nickel from ferronickel compound wastewater

Also Published As

Publication number Publication date
KR20030029004A (en) 2003-04-11

Similar Documents

Publication Publication Date Title
JP4651906B2 (en) Plating bath and method for depositing a metal layer on a substrate
JP4559696B2 (en) Plating bath and method for depositing a metal layer on a substrate
JP4267285B2 (en) Plating bath and method for depositing a metal layer on a substrate
JP4559019B2 (en) Plating bath and method for depositing a metal layer on a substrate
JP4342294B2 (en) Reverse pulse plating composition and reverse pulse plating method
EP1308541A1 (en) Plating bath and method for depositing a metal layer on a substrate
US6544399B1 (en) Electrodeposition chemistry for filling apertures with reflective metal
TW591124B (en) Plating bath and method for depositing a metal layer on a substrate