588181 A7 B7 五、發明說明（） U月領域 .本發明是有關於一種之液晶顯示器（Liqiud Crystal Display ; LCD)的製造方法，且特別是有關於一種多域垂 直排列（Mult卜Domain Vertical Alignment ; MVA)液晶顯示 器的彩色濾光板的製造方法。 豐明背景 液晶顯示器具有高畫質、體積小、重量輕、低電壓驅 動、低消耗功率及應用範圍廣等優點，被廣泛應用於中、 小型可攜式笔視、f了動電I舌、攝錄放影機、筆記型電腦、 桌上型顯示器、以及投影電視等消費性電子或電腦產品， 並已逐漸取代陰極射線管(Cathode Ray Tube ; CRT)成爲顯 示器的主流。 一般液晶顯示器之主體爲液晶單元，主要是由兩片透 明基板以及被封於基板之間的液晶所構成。目前液晶顯示 器是以薄膜電晶體(Thin Film Transistor ; TFT)液晶顯示器 爲主’而一般薄膜電晶體液晶顯不器之製作可大致區分爲 四部份：薄膜電晶體陣列(TFT Array)製程、彩色濾光板製 程、液晶顯示單元組裝(LC Cell Assembly)製程、液晶顯示 模組(Liquid Crystal Module ; LCM)製程。 其中彩色濾光板製程是用以製作彩色濾光板，其上有 由不同顏色的濾光片陣列所組成之彩色濾光層（Color Filter) 與包圍濾光片四周之遮光層(Black Matrix)。一般彩色濾光 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -·1111111 « — I — —— — — — 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 588181 A7 B7 五、發明說明（) 層的材質是彩色光阻，而一般遮光層的材質是鉻/氧化鉻 或氧化樹脂等和彩色光阻不同之材料。 近年來，液晶顯示器市場大增，尤其是在電腦與筆記 型電腦的應用上。而所謂大面積、高解析度、廣視角與快 速的反應時間等之要求，也成爲這些液晶顯示器訴求的關 鍵所在。通常廣視角的液晶顯示器最重要是控制垂直排列 液晶分子的方向，其中一個技術即爲多域垂直排列的液晶 顯示器。在此類多域垂直排列的液晶顯示器中，需在液晶 顯示器的兩片面板內部製造一些突起，以使不同區域的液 晶分子朝向不同方向來排列，以達成廣視角的功能。 發明目的與槪述 因此本發明的主要目的就是在提供一種多域垂直排列 之薄膜電晶體液晶顯示器的彩色濾光板的製造方法。首 先，在透明基板上形成網狀遮光層，以在透明基板上區隔 出多個濾光區。然後在每個濾光區上分別形成彩色濾光 片，再形成共通電極於彩色濾光片上。接著在透明基板上 形成光阻層，然後進行微影步驟，利用兩步驟曝光法或狹 縫微影法以使光阻層同時形成多個突起與多個間隙物。突 起是分別位於每個濾光區上，且間隙物位於網狀遮光層 上。 由上述可知，本發明利用狹縫微影法或兩步驟曝光 法，使同一層光阻不同區域具有不同的曝光量，因而可以 3 -*^--------tr--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 588181 A7 B7 五、發明說明（） 同時產生間隙物與突起。所以應用本發明至少具有可省略 一次微影步驟之優點，可使產量大幅提昇，並節省製造成 本。 圖式之簡單說明 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 第1-4圖是繪示依照本發明一較佳實施例的一種多域 垂直排列液晶顯示器的彩色濾光板的製造流程剖面圖。 圖式之標記說明 1〇〇 :基板 11 〇 :濾光層 120 :開口 130a、130b、130c :彩色濾光片 140 :共通電極 150 :光阻 150a :突起 150b :間隙物 發明之詳細說明 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) - 裝--------訂---------^_w (請先閱讀背面之注意事項再填寫本頁) 588181 經濟部智慧財產局員工消費合作社印製 Λ7 ______ B7_____ 五、發明說明（）588181 A7 B7 V. Description of the invention (U) field. The present invention relates to a method for manufacturing a liquid crystal display (Liqiud Crystal Display; LCD), and particularly to a multi-domain vertical alignment (Mult Bu Domain Vertical Alignment; MVA) A method for manufacturing a color filter for a liquid crystal display. The Fengming background LCD has the advantages of high image quality, small size, light weight, low voltage drive, low power consumption, and wide application range. It is widely used in small and medium-sized portable pens, power electronics, Consumer electronics or computer products such as camcorders, notebook computers, desktop displays, and projection televisions have gradually replaced cathode ray tubes (CRT) as the mainstream of displays. The main body of a general liquid crystal display is a liquid crystal cell, which is mainly composed of two transparent substrates and liquid crystal sealed between the substrates. At present, liquid crystal displays are mainly based on thin film transistor (TFT) liquid crystal displays. However, the production of general thin film transistor liquid crystal displays can be roughly divided into four parts: thin film transistor array (TFT Array) process, color Filter plate manufacturing process, liquid crystal display cell assembly (LC Cell Assembly) manufacturing process, liquid crystal display module (Liquid Crystal Module; LCM) manufacturing process. The color filter process is used to make a color filter, which has a color filter layer (Color Filter) composed of filter arrays of different colors and a black matrix (Black Matrix) surrounding the filter. General color filter The size of this paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page)-· 1111111 «— I — —— — — — Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative printed by the Ministry of Economy Intellectual Property Bureau employee consumer cooperative printed by 588181 A7 B7 V. Description of the invention () The material of the layer is a color photoresist, and the material of the general light-shielding layer is chromium / chromia or oxidized resin Different from color photoresist. In recent years, the market for liquid crystal displays has grown significantly, especially in computer and notebook applications. The requirements of so-called large area, high resolution, wide viewing angle, and fast response time have also become the key to the appeal of these liquid crystal displays. Generally, the most important aspect of a liquid crystal display with a wide viewing angle is to control the direction of vertically aligned liquid crystal molecules. One of the technologies is a multi-domain vertical liquid crystal display. In such a multi-domain vertical liquid crystal display, some protrusions need to be made inside the two panels of the liquid crystal display so that the liquid crystal molecules in different regions are aligned in different directions to achieve a wide viewing angle function. OBJECTS AND DESCRIPTIONS OF THE INVENTION Therefore, the main object of the present invention is to provide a method for manufacturing a color filter of a thin film transistor liquid crystal display with a multi-domain vertical arrangement. First, a mesh-like light-shielding layer is formed on a transparent substrate to isolate a plurality of filter regions on the transparent substrate. Then, a color filter is formed on each filter area, and then a common electrode is formed on the color filter. Next, a photoresist layer is formed on the transparent substrate, and then a lithography step is performed. A two-step exposure method or a slit lithography method is used to make the photoresist layer simultaneously form a plurality of protrusions and a plurality of gaps. The protrusions are respectively located on each filter region, and the spacers are located on the mesh shading layer. It can be known from the above that the present invention uses the slit lithography method or the two-step exposure method to make different areas of the same layer of photoresist have different exposure amounts, so that 3-* ^ -------- tr ---- ----- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 588181 A7 B7 V. Description of the invention () Simultaneous generation of gaps and protrusions. Therefore, the application of the present invention has the advantage that at least one lithography step can be omitted, which can greatly increase the yield and save the manufacturing cost. Brief description of the drawings In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and in conjunction with the attached drawings, the detailed description is as follows: 1-4 FIG. Is a cross-sectional view illustrating a manufacturing process of a color filter of a multi-domain vertical alignment liquid crystal display according to a preferred embodiment of the present invention. Explanation of markings of the drawings 100: substrate 11: filter layer 120: openings 130a, 130b, 130c: color filter 140: common electrode 150: photoresist 150a: protrusion 150b: detailed description of the spacer invention 4 Paper size applies to China National Standard (CNS) A4 (210 X 297 mm)-Packing -------- Order --------- ^ _ w (Please read the notes on the back before filling (This page) 588181 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 ______ B7_____ V. Description of Invention ()
Kim等人提出一種狹縫微影法(SHt Photolithography) 或稱灰階微影法（Gray-Tone Photolithography)。此方法利 用雙狹縫在局部區域製造出較低之光強度，以使一光阻層 可以在不同區域同時接受兩種不同光強度。因此顯影後之 光阻層具有兩種不同厚麽（810 00 DIGEST, 2000, p.1006)， 在曝光強度弱的區域會留有部分厚度的光阻，而在完全曝 光區域沒有殘留任何光阻。 另外Chen等人也提出一種兩步驟曝光法（了w〇-step-Exposure)，以先強後弱之兩次曝光強度來使一光阻層曝光 (SID 〇〇 DIGEST，2000，p.1011)。同樣的，在顯影之後曝 光強度弱的區域會留有部分厚度的光阻，而在完全曝光區 域則沒有殘留任何光阻。Kim et al. Proposed a SHt Photolithography or Gray-Tone Photolithography. This method uses double slits to create a lower light intensity in a local area, so that a photoresist layer can simultaneously receive two different light intensities in different areas. Therefore, the photoresist layer after development has two different thicknesses (810 00 DIGEST, 2000, p. 1006). Partial thickness of the photoresist will be left in the area with weak exposure intensity, and no photoresist will be left in the fully exposed area. . In addition, Chen et al. Also proposed a two-step exposure method (w0-step-Exposure), which exposes a photoresist layer with two exposure intensities, first strong and then weak (SID 〇〇DIGEST, 2000, p. 1011). . Similarly, after the development, the area with a weak exposure intensity will have a part of the thickness of the photoresist, but there will be no photoresist remaining in the fully exposed area.
Kim與Chen所提出之方法，雖然是應用在正光阻上， 但是若將上述之應用反過來的話，亦可應用在負光阻上。 若應用在負光阻上，則當光阻顯影之後，在完全曝光區域 之光阻厚度最厚，而在沒有曝光區域不殘留任何光阻。至 於要留有部分厚度光阻的區域，可以藉由減少聚光深度 (depth of focus)並使曝光光線之焦點往光姐之底部移動， 再加上將曝光強度調弱，則可以在此區域中留下部分厚度 的光阻層·。前述所使用的曝光方法較佳爲投射曝光法 (Projection Printing)，所使用的機台爲步進機（Stepper)。 另外負光阻亦可使用背面曝光的方式，則如同正光 阻’只要改變曝光強度即可。曝光強度較弱之處，光阻的 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) " ------ --------^--------- (請先閱讀背面之注意事項再填寫本頁) 588181 A7 五、發明說明（） 厚度較薄。曝光強度較強之處，光阻的厚度較厚。此種曝 光方式較佳爲使用鄰近曝光法（Proximity Printing)。 請參照第I-4圖，其繪示依照本發明一較佳實施例的 一種多域垂直排列液晶顯示器的彩色濾光板的製造流程剖 面圖。 在第1圖中，在形成有薄膜電晶體電路之基板1〇〇上 形成遮光層，再進行圖案化的工作形成遮光層110將薄膜 電晶體與連接薄膜電晶體之金屬線的區域覆蓋住。圖案化 之遮光層11Q將第一基板1〇〇之表面區隔出一個個的開口 120，每一個開口 120即爲一個畫素（Pixel)。遮光層 的材質例如可爲鉻/氧化鉻或氧化樹脂等材料，而其形成 方法例如可爲物理氣相沈積法或塗佈法。 請參照第2圖，然後在遮光層Π0上形成彩色濾光片 130a、130b與130c ’其顏色例如可爲紅、藍、綠三色。 每一個不同顏色之彩色濾光片130a、130b與i3〇c和每一 個由遮光層11 〇所區隔開之開口 120 (請見第1圖）--相 對，如此可提高最後於顯示螢幕上相鄰不同色彩亮點之間 的色彩對比度。 然後在彩色濾光片130a、130b與130c.上形成共通電 極(pixel electrode) 140。共通電極140爲透明的，其材質 例如可爲氧化銦錫（Indium Tin Oxide ; IT0)，而宜形成方 法例如爲可先使用濺鍍法形成一層共通電極140。 在第3圖中，形成一層光阻150來覆蓋共通電極14〇。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝Although the method proposed by Kim and Chen is applied to positive photoresist, if the above application is reversed, it can also be applied to negative photoresist. If applied to a negative photoresist, after the photoresist is developed, the thickness of the photoresist will be the thickest in the fully exposed area, and no photoresist will remain in the non-exposed area. As for the area where a part of the thickness of the photoresist is to be left, you can reduce the depth of focus and move the focus of the exposure light to the bottom of the light sister. In addition, you can reduce the exposure intensity in this area. Part of the thickness of the photoresist layer. The aforementioned exposure method is preferably a projection exposure method, and the machine used is a stepper. In addition, the negative photoresist can also be used for back exposure. Just like the positive photoresist ', it is only necessary to change the exposure intensity. Where the exposure intensity is weak, the 5 paper sizes of the photoresist are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) " ------ -------- ^ --- ------ (Please read the precautions on the back before filling this page) 588181 A7 V. Description of the invention () The thickness is thin. Where the exposure intensity is strong, the thickness of the photoresist is thick. This exposure method is preferably a proximity printing method (Proximity Printing). Please refer to FIG. I-4, which is a cross-sectional view showing a manufacturing process of a color filter of a multi-domain vertical alignment liquid crystal display according to a preferred embodiment of the present invention. In FIG. 1, a light-shielding layer is formed on a substrate 100 on which a thin-film transistor circuit is formed, and then a patterning operation is performed to form the light-shielding layer 110 to cover the area of the thin-film transistor and the metal line connecting the thin-film transistor. The patterned light-shielding layer 11Q separates the surface of the first substrate 100 from the openings 120, and each of the openings 120 is a pixel. The material of the light-shielding layer may be, for example, a material such as chromium / chromium oxide or an oxidized resin, and the method for forming the light-shielding layer may be, for example, a physical vapor deposition method or a coating method. Referring to FIG. 2, color filters 130a, 130b, and 130c 'are formed on the light-shielding layer Π0, and the colors may be red, blue, and green, for example. Each of the color filters 130a, 130b and i30c of different colors and each of the openings 120 separated by the light-shielding layer 110 (see Figure 1)-relatively, so as to improve the final on the display screen Color contrast between adjacent different color bright spots. A common electrode 140 is then formed on the color filters 130a, 130b, and 130c. The common electrode 140 is transparent, and the material thereof may be, for example, indium tin oxide (IT0), and a suitable forming method may be, for example, a layer of the common electrode 140 may be formed by a sputtering method. In FIG. 3, a layer of photoresist 150 is formed to cover the common electrode 14o. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page).
T i in ϋ n «ϋ - · flu ϋ if ·ϋ n ϋ n I 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 588181 Λ7 B7 五、發明說明（） 在第4圖中，利用狹縫微影法或兩步驟曝光法，利用不同 的光強度來將光阻150圖案化形成多個間隙物150a與突 起150b。而不像習知方法，至少要利用兩次微影的步驟， 才能分別製造出間隙物150a與突起150b。 間隙物150a的位置是在遮光層110之上方，以使液 晶顯示器之開口率達到最大。上述間隙物150a的高度較 佳爲1 - 10微米，更佳爲3 - 6微米。而其材質之硬度較 佳至少爲鉛筆硬度2H至4H之間，才能維持間隙（cell gap) 爲一定値。而光阻的材質例如可爲壓克力樹脂或環氧樹 脂，例如JSR公司所售之商品OPTMERNN5 00或OPTMER NN700。另外圖案化此光阻的方法例如可爲曝光顯影法或 曝光蝕刻法。 而突起150b的位置是在彩色濾光片n〇a、130b與130c 的上方’大小形狀則視需要而定。如此可以使後續在塡充 液晶分子之後，可讓液晶分子依據位在突起15〇b之不同 方向的表面上而有不同的排列方向來擴大液晶顯示器的視 角。一般來說，突起150b的高度較佳爲〇.5 - 5.微米，更 佳爲1〜2微米。 後續的製程，如同熟悉此技藝者所熟知。先在另一基 板上形成薄膜電晶體陣列，再形成一層顯示電極。其中第 二基板之材質較佳爲使用透明材料，例如玻璃或石英。而 顯示電極爲透明的，其材質例如可爲氧化銦錫，其形成方 法例如可爲濺鍍法。 然後將基板100與另一基板平行配置組裝，使顯示電 7 準（CNS)A4 規格（210 x 297 公餐1-^--- A__w --------^--------- (請先閱讀背面之注意事項再填寫本頁) 588181 A7 _B7^ 五、發明說明（） 極與間隙物位於基板100與另一基板之間，然後將側邊封 合起來，只留一個開口。最後自側邊開口灌入液晶，於間 隙物周圍空間形成液晶層，再將側邊開口封起來，完成薄 膜電晶體液晶顯示器的製作過程。 由上述本發明較佳實施例可知，本發明利用狹縫微影 法或兩步驟曝光法，使同一層光阻不同區域具有不同的曝 光量，因而可以同時產生間隙物與突起。所以應用本發明 至少具有可省略一次微影步驟之優點，可使產量大幅提 昇，並節省製造成本。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 ·&--------tr--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）T i in ϋ n «ϋ-· flu ϋ if · ϋ n ϋ n I Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by 588181 Λ7 B7 In the figure, a slit lithography method or a two-step exposure method is used to pattern the photoresist 150 to form a plurality of spacers 150a and protrusions 150b using different light intensities. Unlike the conventional method, at least two lithography steps are used to manufacture the spacer 150a and the protrusion 150b respectively. The position of the spacer 150a is above the light-shielding layer 110 to maximize the aperture ratio of the liquid crystal display. The height of the spacer 150a is preferably 1 to 10 m, and more preferably 3 to 6 m. The hardness of the material is at least between 2H and 4H, in order to maintain a certain cell gap. The material of the photoresist may be, for example, acrylic resin or epoxy resin, such as the products OPTMERNN 500 or OPTMER NN700 sold by JSR Company. The method of patterning the photoresist may be, for example, an exposure development method or an exposure etching method. The position of the protrusion 150b is above the color filters noa, 130b, and 130c, depending on the size. In this way, after the liquid crystal molecules are filled, the liquid crystal molecules can be arranged in different directions according to the positions of the protrusions 15b in different directions to expand the viewing angle of the liquid crystal display. Generally, the height of the protrusion 150b is preferably from 0.5 to 5. microns, more preferably from 1 to 2 microns. Subsequent processes are as familiar to those skilled in the art. A thin-film transistor array is formed on another substrate, and then a layer of display electrodes is formed. The material of the second substrate is preferably a transparent material, such as glass or quartz. The display electrode is transparent. The material of the display electrode is, for example, indium tin oxide, and the method of forming the display electrode is, for example, sputtering. Then, the substrate 100 is assembled in parallel with another substrate, so that the display standard (CNS) A4 (210 x 297 meals 1-^ --- A__w -------- ^ ------) --- (Please read the precautions on the back before filling this page) 588181 A7 _B7 ^ V. Description of the invention () The pole and the gap are located between the substrate 100 and another substrate, and then the sides are sealed together, leaving only One opening. Finally, liquid crystal is filled from the side opening to form a liquid crystal layer in the space surrounding the gap, and then the side opening is sealed to complete the manufacturing process of the thin film transistor liquid crystal display. According to the above-mentioned preferred embodiments of the present invention, it can be known that The invention uses a slit lithography method or a two-step exposure method, so that different areas of the same layer of photoresist have different exposure amounts, so that gaps and protrusions can be generated at the same time. Therefore, the application of the present invention has the advantage that at least one lithography step can be omitted. It can greatly increase the yield and save the manufacturing cost. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art will not depart from the spirit and scope of the present invention. When available Changes and retouching, therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application. &Amp; -------- tr --------- (Please first Read the notes on the back and fill in this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 8 The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm)