586163 A7586163 A7
經濟部智慧財產局員工消費合作社印製 五、發明説明（） 發明領域： 本發明係有關於積體電路元件之製造方法，特別是有 閘極氧化層之製造方法。 發明背景： 現在積體電路工業來說，矽是最普遍被採用的半導體 來源，可製成純度高的晶圓以供製程所需，且易於進行N 型與P型半導體的製作。藉由將矽晶片暴露在高溫且含氧 的環境裡一段時間後，矽的氧化可在矽晶片中長成與矽附 著性良好，且電性符合需求的矽氧化物絕緣體。因應製程 所需的石夕氧化物絕緣體如：金氧半導體（Metal 〇xide Semiconductor ; MOS)中的閘極氧化層（Gate 0xide)、墊氧 化層（Pad Oxide)、場氧化層（Field 〇xide)w及犧牲氧化層 (Sacrificial Oxide)等。而MOS中為防止成千上萬的電晶體 發生短路相通的現象，而在相鄰的電晶體間加入用以電性 隔離的隔離結構’其中以淺溝渠隔離（Shallow Trench Isolation ; SΤΙ)最被廣泛應用，而淺溝渠隔離也是由矽氧化 物構成。 製造積體電路有許多不同的應用，而在電晶體中’係 利用熱氧化（Thermal Oxide)製程與蝕刻步驟，來形成數個 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ..............變：卜......訂.........線· (請先閲讀背面之注意事項再填寫本頁) 586163 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（） 不同厚度的閘極氧化層。其中，舉例說明不同厚度之三閘 極氧化層之製造方法如下： 第1 a圖至第1 e圖所繪示為習知不同厚度的三閘極氧 化層之製程流程圖。習知在基材10的A部分、B部分與c 部分形成厚度分別為50A、22人與17入的閘極氧化層，其 中A部分與B部分之間，B部分與c部分之間分別以淺溝 渠隔離11與12來作為元件的隔離。 首先，提供一基材，而在此基材上具有數個隔離元件， 如淺溝渠隔離。這些淺溝渠隔離，將基材分為數個部分， 如第1 a圖所示。凊參照第1 a圖，淺溝渠隔離1 1與淺溝渠 隔離12將基材10分為三部份，分別為a部分、b部分與 C部分。其中，以例如熱氧化製程，在基材丨〇之A部分、 B部分與C部分，分別形成厚度為5〇a的閘極氧化層^、 1 6 與 1 8 〇 接著，以光阻覆蓋閘極氧化層1 4，即光阻覆蓋住A部 分，再進行一蝕刻步驟。利用此蝕刻步驟，去除閘極氧化 層16與1 8 ’暴露出B部分與C部分的基材，並保留元件 所需A部分，厚度約為50A的閘極氧化層14，如第lb圖 所示。在此蝕刻步驟中，去除對B部分與c部分閘極氧化 層16與18的同時，也造成淺溝渠隔離丨丨與12的損失2〇、 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公楚)' --------- -丨丨丨11_1丨丨丨丨丨丨丨丨丨丨丨丨丨_、一叮 (請先閲讀背面之注意事項再填寫本頁} 五、發明説明（）Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Field of the invention: The present invention relates to a method for manufacturing integrated circuit components, especially a method for manufacturing a gate oxide layer. Background of the Invention: Nowadays, for the integrated circuit industry, silicon is the most commonly used semiconductor source. It can be made into wafers with high purity for process needs, and it is easy to make N-type and P-type semiconductors. After exposing the silicon wafer to a high-temperature and oxygen-containing environment for a period of time, the oxidation of the silicon can grow into a silicon oxide insulator with good adhesion to silicon and electrical properties in the silicon wafer. Stone oxide oxide insulators required according to the process, such as: Gate 0xide, Pad Oxide, Field Oxide in Metal Oxide Semiconductor (MOS) w and sacrificial oxide (Sacrificial Oxide). In MOS, in order to prevent thousands of transistors from being short-circuited, an isolation structure is added between adjacent transistors for electrical isolation. Among them, Shallow Trench Isolation (STI) is most commonly used. Widely used, and shallow trench isolation is also made of silicon oxide. There are many different applications for manufacturing integrated circuits. In the transistor, the thermal oxidation process and etching steps are used to form several paper sizes that are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). .............. Change: Bu ... Order ......... Line · (Please read the notes on the back before filling this page) 586163 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () Gate oxide layers of different thicknesses. Among them, the manufacturing method of three-gate oxide layers with different thicknesses is illustrated as follows: Figures 1a to 1e show the conventional three-gate oxide layers with different thicknesses. It is known that a gate oxide layer having a thickness of 50 A, 22 people, and 17 holes is formed on the A part, the B part, and the c part of the substrate 10, respectively, between the A part and the B part, and between the B part and the c part respectively. Shallow trench isolation 11 and 12 serve as component isolation. First, a substrate is provided, and there are several isolation elements on the substrate, such as shallow trench isolation. These shallow trenches are isolated, dividing the substrate into several parts, as shown in Figure 1a.凊 Referring to Figure 1a, the shallow trench isolation 11 and the shallow trench isolation 12 divide the substrate 10 into three parts, namely a part, b part, and C part. Wherein, in a thermal oxidation process, gate oxide layers ^, 16 and 18 are formed at a thickness of 50a on parts A, B and C of the substrate, respectively, and then the gate is covered with a photoresist. The polar oxide layer 14 is a photoresist covering part A, and then an etching step is performed. With this etching step, the gate oxide layers 16 and 18 'are removed to expose the substrates of parts B and C, and the gate oxide layer 14 with a thickness of about 50 A is retained as required by the component A, as shown in FIG. Show. In this etching step, the gate oxide layers 16 and 18 for part B and part c are removed, and the shallow trench isolation is also caused. The loss of 12 and 20 is 20. This paper size applies the Chinese National Standard (CNS) A4 specification ( 210x297 公 楚) '----------丨 丨 丨 11_1 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 _, Yi Ding (Please read the precautions on the back before filling this page} 5 , Description of the invention ()
22與24，此損失厚度約為50A 請參照第1 c圖，將覆蓋在閘極氧化層Μ上的光阻去 除後’再以例如熱氧化製程，在先前經蝕刻步驟所暴露的 基材10之B部分與C部分，分別形成厚度為2〇A的閘極 氧化層26與28。 接著，以光阻覆蓋閘極氧化層14與26，即以光阻覆蓋 A部分與B部分，再進行第二次的蝕刻步驟。利用此蝕刻 步驟，去除閘極氧化層28，暴露出c部分的基材，使元件 所需的厚度為50A之閘極氧化層μ與厚度為2〇A之閘極 氧化層26 #留下來，如第ld圖所示。纟此飯刻步驟中， 去除c部分閘極氧化層28的同時，也造成淺溝渠隔離q 的損失30，此損失厚度約為2〇a。 凊參照第1 e圖，將覆蓋在閘極氧化層丨4與2 6上的光 阻去除後，再以例如熱氧化製程，在先前經第二次蝕刻步 驟所暴露的基材1G之c部分，形成厚度為nA的問極〔 經過上述的熱氧化製程後，由於擴散速率的關係，^ 部分之閘極氧化層厚度約為50A，B部分 |刀又閘極虱化層厚产 約為22A，而C部分之閘極氧化層厚度約^ nA，便形： 4 586163 A7 B7 五、發明説明（ 元件所需不同厚度的三閘極氧化層 ..............0, · (請先閲讀背面之注意事項再填寫本頁；> 經上述第一次蝕刻步驟後，由於去除厚度為5〇A之閘 極氧化層，造成淺溝渠隔離厚度約為5〇A的損失，包括淺 溝渠隔離11的彳貝失20,與淺溝渠隔離12的損失22與24· 再經第二次蝕刻步驟後，去除厚度為2〇A之閘極氧化層， 造成淺溝區隔離厚度約為20A的損失，包括淺溝渠隔離12 的損失30。換句話說，在上述製程中，造成淺溝渠隔離^ 與12不同程度的損失，其中以淺溝渠隔離12與c部分交 接處受到2次損失，程度較嚴重。 發明目的及概述： 鑒於上述之發明背景中，淺溝渠隔離具有不同程度的 損失，而淺溝渠隔離的邊角損失會造成高電場累積，導致 截止電流（i〇ff)過大，並使積體電路的閘極氧化層積集度 (Gate Oxide Integrity ; GOI)下降，這些都會使得積體電路 的品質下降。 經濟部智慧財產局員工消費合作社印製 本發明之一目的為提供形成3種不同厚度的閘極氧化 層之製造方法。 本發明之另一目的為改善閘極氧化層中，淺溝渠隔離 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 586163 A722 and 24, the loss thickness is about 50A. Please refer to Figure 1c. After removing the photoresist covering the gate oxide layer M, the substrate 10 exposed by the previous etching step is removed by, for example, a thermal oxidation process. Part B and part C form gate oxide layers 26 and 28 having a thickness of 20 A, respectively. Next, the gate oxide layers 14 and 26 are covered with a photoresist, that is, parts A and B are covered with a photoresist, and then a second etching step is performed. With this etching step, the gate oxide layer 28 is removed, and the substrate of part c is exposed, so that the gate oxide layer μ with a thickness of 50A and the gate oxide layer 26 with a thickness of 20A are required. As shown in Figure ld.纟 In this step, the gate oxide layer 28 in part c is removed, and the loss 30 of the shallow trench isolation q is also caused. The thickness of this loss is about 20a.凊 Referring to FIG. 1e, after removing the photoresist covering the gate oxide layers 4 and 26, and then using a thermal oxidation process, for example, part c of the substrate 1G that was previously exposed through the second etching step After the thermal oxidation process described above, due to the diffusion rate, the thickness of the gate oxide layer in part ^ is about 50A, and the thickness of part B | knife and gate lice layer is about 22A. , And the thickness of the gate oxide layer in part C is about ^ nA, it will be: 4 586163 A7 B7 V. Description of the invention (three gate oxide layers with different thicknesses required for the component ............. .0, (Please read the precautions on the back before filling in this page; > After the first etching step described above, the thickness of the shallow trench isolation is about 50 as the gate oxide layer with a thickness of 50A is removed. Loss of A, including loss of 20 in shallow trench isolation 11 and loss of 22 in shallow trench isolation 12 and 24. After the second etching step, the gate oxide layer with a thickness of 20 A was removed, resulting in shallow trenches. Zone isolation thickness is about 20A loss, including loss 30 for shallow trench isolation12. In other words, in the above process, Ditch isolation ^ and 12 losses of different degrees, of which the shallow trench isolation 12 and c junctions suffered two losses, the degree is more serious. Purpose and summary of the invention: In view of the above background of the invention, shallow trench isolation has different degrees of loss. , And the loss of the corners of the shallow trench isolation will cause high electric field accumulation, cause the off current (i0ff) to be too large, and reduce the gate oxide layer integration (Gate Oxide Integrity; GOI) of the integrated circuit, which will make The quality of integrated circuits is degraded. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, one of the purposes of the present invention is to provide a manufacturing method for forming gate oxide layers with three different thicknesses. Another object of the present invention is to improve the gate oxide layer. Medium and shallow trench isolation. This paper is sized for China National Standard (CNS) A4 (210X 297 mm) 586163 A7
五、發明說明（） 的邊角損失程度與次數。 ★本發明可利用熱氧化製程來製造閘極氧化層，並利用 既化氫,氣回蝕刻製程(HF Vapor Etching Back Pr〇cess)， ’、p刀的閘極氧化層達到所需的厚度，其製程說明如 . ’、基材，在此基材上形成第一淺溝渠隔離與第二 2溝渠隔離以區分基材為第一部份、第二部分與第三部 分，並分別在基材之第一部份、第二部分與第三部分形成 具有元件所需厚度之一閘極氧化層。#著，覆蓋光阻於基 材之第一部份，再進行一第一蝕刻步驟，去除位於基材之 第二部分與第三部分的閘極氧化層，並形成元件所需另一 厚度的閘極氧化層於基材之第二部分與第三部分。接著， 覆蓋光阻於基材之第一部份與第二部 >，進行氟化氫蒸氣 回蝕刻製程，將位於基材之第三部分的閘極層蝕刻成元件 所需的再一厚度。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 極的 閘失 造損 製離 來隔 驟渠 步溝 刻淺 #少 濕減 與 到 程達 製， 化置 氧位： 熱阻下 用光如 利變明 可改說 更用程 明利製 發，其 本層， 化的 氧 目 第 與 隔 渠 溝 淺1 第 成 形 上 材 基 此 在 材 基1 供 提 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) 586163 A7 _B7_ 五、發明説明（） 淺溝渠隔離以區分基材為第一部份、第二部分與第三部 分，並分別在基材之第一部份、第二部分與第三部分形成 具有元件所需厚度之一閘極氧化層。接著，覆蓋光阻於基 材之第一部份與第三部分，再進行一第一蝕刻步驟，去除 位於基材之第二部分的閘極氧化層，並形成元件所需另一 厚度的閘極氧化層於基材之第二部分。隨後，覆蓋光阻於 基材之第一部份與第二部分，進行一第二蝕刻步驟，去除 位於基材之第三部分的閘極氧化層，再形成元件所需再一 厚度之閘極氧化層於基材之第三部分。 本發明利用 HF蒸氣回蝕刻製程與改變光阻位置的製 造方法，可確實減少淺溝渠隔離的損失程度與次數，達到 良好的閘極氧化層積集度，並減少因淺溝渠隔離的邊角損 失所造成的電場累積。 圊式簡單說明： (請先閲讀背面之注意事項再填寫本頁) 列 下 以 輔 中 字 文 明 說 之 後 往 於： 將中 例其 施， 實述 佳闡 較的 的細 明詳 發更 本做 形 圖 經濟部智慧財產局員工消費合作社印製 氧 極 極 閘 閘 三 三 之 之 度 度 厚 厚 同 同 不 不 明 知 發 習 本 為 為 示 示 所 所 圖 圖 e ; d 1 2 第®第 至β至 •W;,L 圖、、〃圖 a L a 1 製 2 第之第 層 化 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 586163 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 氧化層之製造流程圖；以及 第3a圖至第3e圖所繪示為本發明不同厚度之三閘極 氧化層之製造流程圖。 圖號對照說明： 10 基材 11 淺溝渠隔離 12 淺溝渠隔離 14 閘極氧化層 16 閘極氧化層 18 閘極氧化層 20 損失 22 損失 24 損失 26 閘極氧化層 28 閘極氧化層 30 損失 32 閘極氧化層 70 基材 71 淺溝渠隔離 72 淺溝渠隔離 74 閘極氧化層 76 閘極氧化層 78 閘極氧化層 80 損失 82 損失 84 損失 86 閘極氧化層 88 閘極氧化層 90 閘極氧化層 140 基材 141 淺溝渠隔離 142 淺溝渠隔離 144 閘極氧化層 146 閘極氧化層 148 閘極氧化層 150 損失 152 損失 154 閘極氧化層 8 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) ----------------------、可---------$· (請先閱讀背面之注意事項再填寫本頁) 586163 A7 B7 五、發明説明（ 156 損失 15 8 閘極氧化層 發明詳細說明： 淺溝渠隔離的邊角損失，會造成元件截止電流增大 而問極氧化層積集度下降，使得積體電路的品質下降。 本發明係針對形成不同厚度的三閘極氧化層時，提供 一種利用HF蒸氣回蝕刻之製造方法來改善對淺溝渠隔離 的傷害。 本發明之一實施例，不同厚度之三閘極氧化層之製造 流程圖如第2 a圖至第2 d圖所示。在本發明之此—香 貝％例 中，在基材7 0的A部分、B部分與C部分形成厚度分別為 5〇A、22A與17A的三閘極氧化層，其中a部分與b部分 之間，B部分與C部分之間分別以淺溝渠隔離71與72來 作為元件的隔離結構。本發明之製程分別說明如下： …：.........#: (請先閲讀背面之注意事項再填寫本頁) 訂 線 經濟部智慧財產局員工消費合作社印製 首先，提供一基材，而在此基材上具有數個隔離元件， 如淺溝渠隔離。這些淺溝渠隔離，將基材分為數個部分， 如第2a圖所示。請參照第2a圖，淺溝渠隔離71與淺溝渠 隔離72將基材70分為三部份，分別為a部分、B部分與 C部分。其中，以例如熱氧化製程，在基材70之a部分、 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公變) 586163 A7Fifth, the invention explains the degree and frequency of corner loss. ★ The present invention can use a thermal oxidation process to manufacture a gate oxide layer, and use an existing hydrogen and gas etch back process (HF Vapor Etching Back Pr0cess). The gate oxide layer of the knife can reach the required thickness. The process description is as follows: ', the substrate, the first shallow trench isolation and the second 2 trench isolation are formed on this substrate to distinguish the substrate into the first part, the second part and the third part, and respectively on the substrate The first part, the second part, and the third part form a gate oxide layer having a thickness required for the device. # 着, covering the first portion of the photoresist on the substrate, and then performing a first etching step to remove the gate oxide layer on the second and third portions of the substrate, and form another thickness of the component required The gate oxide layer is on the second part and the third part of the substrate. Next, cover the first and second portions of the photoresist with the substrate, and perform a hydrogen fluoride vapor etch-back process to etch the gate layer on the third portion of the substrate to another thickness required by the device. (Please read the precautions on the back before filling out this page) The brake loss and damage control of the printed electrode of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is separated by the ditch and the step ditch carved shallowly # 少 湿 减 与 到 达达 制 ， Oxygen setting position: Under the thermal resistance, it is better to use light to change the light to make it brighter. It can be changed to use Cheng Mingli to make hair. In this layer, the chemical oxygen is shallower than the trench. This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 586163 A7 _B7_ V. Description of the invention () Shallow trench isolation to distinguish the substrate as the first part, the second part and the third part, and The first portion, the second portion, and the third portion of the substrate form a gate oxide layer having a thickness required for the device. Next, cover the first and third portions of the photoresist on the substrate, and then perform a first etching step to remove the gate oxide layer on the second portion of the substrate and form a gate of another thickness required by the device. The polar oxide layer is on the second part of the substrate. Subsequently, the photoresist is covered on the first and second portions of the substrate, and a second etching step is performed to remove the gate oxide layer on the third portion of the substrate to form a gate electrode of another thickness required by the device. The oxide layer is on the third part of the substrate. The invention uses the HF vapor etch-back process and the manufacturing method for changing the position of the photoresist, which can surely reduce the degree and number of losses of shallow trench isolation, achieve a good gate oxide layer accumulation degree, and reduce the corner loss due to shallow trench isolation. The resulting electric field builds up. Simple description of the formula: (Please read the notes on the back before filling out this page) Listed with the supplementary Chinese character civilization and then go to: Apply the examples in the example, and explain the detailed and detailed details of the better explanations Figure The thickness of the printed oxygen pole gates in the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is similar to that shown in Figure e; d 1 2 Paragraphs ® to β to • W;, L, L, a, a, a, a, a, a, a, a, a, a, 2nd, layered, this paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 586163 Printed by A7, Consumer Cooperatives, Bureau of Intellectual Property, Ministry of Economic Affairs B7 V. Description of the Invention () The manufacturing flow chart of the oxide layer; and Figures 3a to 3e show the manufacturing flow chart of the three-gate oxide layer with different thicknesses of the present invention. Drawing number comparison description: 10 substrate 11 shallow trench isolation 12 shallow trench isolation 14 gate oxide layer 16 gate oxide layer 18 gate oxide layer 20 loss 22 loss 24 loss 26 gate oxide layer 28 gate oxide layer 30 loss 32 Gate oxide layer 70 Substrate 71 Shallow trench isolation 72 Shallow trench isolation 74 Gate oxide layer 76 Gate oxide layer 78 Gate oxide layer 80 Loss 82 Loss 84 Loss 86 Gate oxide layer 88 Gate oxide layer 90 Gate oxidation Layer 140 Substrate 141 Shallow trench isolation 142 Shallow trench isolation 144 Gate oxide layer 146 Gate oxide layer 148 Gate oxide layer 150 Loss 152 Loss 154 Gate oxide layer 8 This paper standard applies to China National Standard (CNS) A4 specifications ( 210X 297 mm) ---------------------- 、 may --------- $ · (Please read the notes on the back before filling This page) 586163 A7 B7 V. Description of the invention (156 loss 15 8 Gate oxide layer invention detailed description: The loss of the corners of shallow trench isolation will cause the component cut-off current to increase and the interlayer oxide layer accumulation to decrease, making the product The quality of the body circuit is reduced. When three-gate oxide layers of different thicknesses are provided, a manufacturing method using HF vapor etchback is provided to improve the damage to shallow trench isolation. According to an embodiment of the present invention, the manufacturing flow chart of three-gate oxide layers of different thicknesses is as described in the first section. As shown in Figures 2a to 2d. In this example of the fragrant shellfish of the present invention, three parts A, B, and C of the substrate 70 are formed in three thicknesses of 50A, 22A, and 17A, respectively. The gate oxide layer has a shallow trench isolation 71 and 72 as the isolation structure between the parts a and b, and the parts B and C, respectively. The manufacturing process of the present invention is described as follows:…: ... ..... #: (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs First, a substrate is provided, and there are several isolation elements on this substrate Such as shallow trench isolation. These shallow trench isolations divide the substrate into several parts, as shown in Figure 2a. Please refer to Figure 2a. Shallow trench isolation 71 and shallow trench isolation 72 divide the substrate 70 into three parts. , Respectively, part a, part B and part C. Among them, for example, hot oxygen Chemical process, in part a of substrate 70, the paper size applies Chinese National Standard (CNS) A4 specification (210X 297 public variable) 586163 A7
五、發明説明（） B部分與C部分，分別形成厚度約為5〇A的閘極氧化層74 76 與 78 。 接著，以光阻覆蓋閘極氧化層7 4，即光阻覆蓋住a部 刀，再進行一蝕刻步驟。利用此蝕刻步驟，去除閘極氧化 層76與78，暴露出B部分與c部分的基材，並保留元件 所需A部分，厚度約為50A的閘極氧化層74 ,如第&圖 所示。在此蝕刻步驟中，去除對B部分與c部分閘極氧化 層76與78的同時’也造成淺溝渠隔離71與72的損失8〇、 82與84，此損失厚度約為50A。 凊參照第2c圖，將覆蓋在閘極氧化層 除後，再以例如熱氧化製程，在先前經姓刻步驟所暴露的 基材70之B部分與C部分，分別形成厚度約為22a的閘 極氧化層86與88。 ............... (請先閲讀背面之注意事項再填寫本頁} 訂 經濟部智慧財產局員工消費合作社印製 接著，以光阻覆蓋閘極氧化層74與86 ,即以光阻覆蓋 A部分與B部分，再進行一 HF蒸氣回蝕刻製程。利用此 速率較緩慢的蝕刻步驟，去除部分的閘極氧化層8 8，使原 本厚度為22A的閘極氧化層88的厚度變薄，形成所需厚度 約為1 7 A的閘極氧化層，如第2 d圖所示。 在上述蝕刻步驟中，由於去除厚度50A之閘極氧 化 線 10 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) 586163 A7 B7 五、發明説明（ 層，造成淺溝渠隔離厚度約為5qA的損失，包括淺溝渠隔 離71的損失8〇,與淺溝渠隔離72的損失82與84;另外， (請先閲讀背面之注意事項再填寫本頁) 由於去除c部分過厚閘極氧化層88的同時，造成淺溝渠隔 離72厚度約為5A的損失92。與習知製造方法比較起來， 本發明減少一道熱氧化製程，更可減輕淺溝渠隔離72的損 失程度 吏其損失程度由2〇入減輕為5入，而達到改善淺溝 渠隔離抽失的目的。另外，本發明之特點係利用町蒸氣回 U製程可進行較&的姓刻速率，以控制去除少量的問 極氧化層。 經過上述的製程後，A部分的問極氧化層厚度約為 5:Α ; B部分的閘極氧化層厚度約為2U ;而c部分的閘極 氧化層厚度約4 17A。值得注意的是，本發明三閘極氧化 層的厚度僅為舉例，可視實際製程與元件所需而改變，本 發明不限於此。 本發明亦提供另一種不同厚度三閘極氧化層之製造方 法，係利用改變光阻覆蓋位置，達到減少淺溝渠隔離損失 的目的。 經濟部智慧財產局員工消費合作社印製 第3a圖至第3e圖所繪示為本發明另一實施例，不同 厚度之三問極氧化層之製造流程圖。在本發明此實施例 中，在基材140的A部分、b部分與c部分形成厚度分別 11 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 為5〇A、22A與1 7A的三閘極氧化層，其中A部分與B部 分之間’ B部分與C部分之間分別以淺溝渠隔離ι4ι與142 來作為元件的隔離結構。本發明之製程分別說明如下·· 首先，提供一基材，而在此基材上具有數個隔離元件， 如淺溝渠隔離。這些淺溝渠隔離，將基材分為數個部分， 如第3a圖所示。請參照第3a圖，淺溝渠隔離i4l與淺溝 渠隔離142將基材140分為三部份，分別為a部分、B部 分與C部分。其中，以例如熱氧化製程，在基材140之A 4分、B部分與C部分，以例如熱氧化製程，形成厚度約 為50A的閘極氧化層144、146與148。 接著’以光阻覆蓋閘極氧化層1 4 4與1 4 8，即以光阻覆 蓋A部分與C部分，再進行一蝕刻步驟。利用此蝕刻步驟， 去除閘極氧化層1 46而暴露出B部分的基材，並保留a部 刀與C部分厚度約為5 0 A的閘極氧化層1 4 4與1 4 8，如第 3 b圖所示。在此蝕刻步驟中，去除B部分閘極氧化層的同 時’也造成淺溝渠隔離141與142的損失150與152，此 損失厚度約為50A。 經濟部智慧財產局員工消費合作社印製 請參照第3 c圖，將覆蓋閘極氧化層！ 44與1 4 8上的光 阻去除後，再以例如熱氧化製程，在先前經蝕刻步驟所暴 露的基材140之B部分，形成厚度約為20A的閘極氧化層 12 本紙張尺度適用中國國家標準(CNS)A4規格(210χ 297公變) 經濟部智慧財產局員工消費合作社印製 586163 A 7 --— _ B7 五、發明説明（） 154 〇 接著，以光阻覆蓋閘極氧化層144與154，亦即以光阻 覆蓋A部分與B部分.，再進行另一蝕刻步驟。利用此蝕刻 步驟，去除閘極氧化層148而暴露出^部分之基材，使元 件所需的厚度為50A的閘極氧化層144與厚度為2〇人的問 極氧化層154保留下來，如第3d圖所示。在此姓刻步驟中， 去除C#刀閘極氧化g 148的同時’也造成淺溝渠隔離⑷ 的損失1 5 6，此損失厚度約為5 〇人。 請參照帛3e圖，將覆蓋在閘極氧化^ 144肖154上的 光阻去除後，#以例如熱氧化製程，在“經第二次㈣ 步驟所暴露的基材140之C部分，形成厚度約為i7A的閘 極氧化層1 5 8。 在上述步驟中，由於去除厚度5〇A之閘極氧化層，造 成淺溝渠隔離厚度約為50A的損失，包括淺溝渠隔離14 J 的損失150,與淺溝渠隔離142的損失152與156。與習知 比較起來，減少了淺溝渠隔離的損失次數，可達到改善淺 溝渠隔離損失的目的。上述的蝕刻步驟，可使用例如氟化 氫溶液的濕#刻製程，本發明不限於此。5. Description of the invention () Part B and part C respectively form gate oxide layers 74 76 and 78 with a thickness of about 50 A. Next, the gate oxide layer 74 is covered with a photoresist, that is, the photoresist covers a part of the knife, and then an etching step is performed. With this etching step, the gate oxide layers 76 and 78 are removed, the substrates of parts B and c are exposed, and the gate oxide layer 74 having a thickness of about 50A is retained as required by the component A, as shown in the & Show. In this etching step, the removal of the gate oxide layers 76 and 78 for parts B and c also causes losses 80, 82, and 84 of the shallow trench isolation 71 and 72, and the loss thickness is about 50A.凊 Referring to FIG. 2c, the gate oxide layer is removed, and then, for example, a thermal oxidation process is used to form a gate having a thickness of about 22a in each of the B and C parts of the substrate 70 that were previously exposed through the last engraving step. Extremely oxidized layers 86 and 88. ............... (Please read the precautions on the back before filling out this page} Order printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and then cover the gate oxide layer with a photoresist 74 And 86, that is, to cover part A and part B with a photoresist, and then perform an HF vapor etch-back process. Using this slower etching step, a part of the gate oxide layer 8 8 is removed to make the gate with a thickness of 22A originally. The thickness of the oxide layer 88 is reduced to form a gate oxide layer having a desired thickness of about 17 A, as shown in Fig. 2d. In the above-mentioned etching step, the gate oxide line having a thickness of 50 A was removed due to 10 paper sizes. Applicable to China National Standard (CNS) A4 specification (210 × 297 mm) 586163 A7 B7 V. Description of the invention (layer, causing loss of shallow trench isolation thickness of about 5qA, including loss of shallow trench isolation 71, 80, isolation from shallow trench Loss 72 of 72 and 84; In addition, (Please read the precautions on the back before filling in this page) Because the excessive thickness of gate oxide layer 88 in part c is removed, the thickness of shallow trench isolation 72 is about 5A. 92 Compared with the conventional manufacturing method, the present invention reduces a hot oxygen The process can also reduce the degree of loss of shallow trench isolation 72, and its degree of loss is reduced from 20 to 5 to achieve the purpose of improving the loss of shallow trench isolation. In addition, the present invention is characterized by the use of Mach vapor return U process. The & engraving rate was compared to control the removal of a small amount of interlayer oxide layer. After the above process, the interlayer oxide layer thickness of part A was about 5: A; the gate oxide layer thickness of part B was about 2U The thickness of the gate oxide layer in part c is about 4 17A. It is worth noting that the thickness of the three gate oxide layer of the present invention is only an example, and can be changed according to the actual process and components required. The present invention is not limited to this. It also provides another manufacturing method of three-gate oxide layers with different thicknesses, which is to change the cover position of photoresist to reduce the loss of shallow trench isolation. The employees' cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs have printed Figures 3a to 3e. The drawing shows another embodiment of the present invention, a manufacturing flow chart of three interlayer oxide layers of different thicknesses. In this embodiment of the present invention, a thickness component is formed in the A part, the b part, and the c part of the substrate 140. 11 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) B7 V. Description of the invention () (Please read the notes on the back before filling this page) Three gates of 50A, 22A and 1 7A An extremely oxidized layer, in which a shallow trench isolation is used between part A and part B and part B and part 142 respectively as isolation structures for the components. The manufacturing process of the present invention is explained as follows. First, a substrate is provided. There are several isolation elements on this substrate, such as shallow trench isolation. These shallow trench isolations divide the substrate into several parts, as shown in Figure 3a. Referring to Fig. 3a, the shallow trench isolation i4l and the shallow trench isolation 142 divide the substrate 140 into three parts, namely a part, B part and C part. Among them, gate oxide layers 144, 146, and 148 having a thickness of about 50 A are formed on the substrate A in four points A, B, and C by, for example, a thermal oxidation process. Next, the gate oxide layers 1 4 4 and 1 4 8 are covered with a photoresist, that is, parts A and C are covered with a photoresist, and then an etching step is performed. With this etching step, the gate oxide layer 146 is removed to expose the substrate of part B, and the gate oxide layers 1 and 4 of section A and the thickness of section C are about 50 A, as shown in the first section. Figure 3b. In this etching step, at the same time as the gate oxide layer in part B is removed, it also causes losses 150 and 152 of the shallow trench isolation 141 and 142, and the thickness of the loss is about 50A. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Please refer to Figure 3c, which will cover the gate oxide layer! After the photoresist on 44 and 1 4 8 is removed, a thermal oxidation process is used to form a gate oxide layer with a thickness of about 20 A on the part B of the substrate 140 exposed by the previous etching step. 12 This paper is suitable for China National Standard (CNS) A4 Specification (210 × 297 Public Change) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 586163 A 7 --- _ B7 V. Description of the Invention () 154 〇 Next, cover the gate oxide layer with a photoresist 144 And 154, that is to cover part A and part B with a photoresist, and then perform another etching step. With this etching step, the gate oxide layer 148 is removed to expose a part of the substrate, so that the gate oxide layer 144 with a thickness of 50A and the interlayer oxide layer 154 with a thickness of 20 are required, such as Figure 3d. In this step, the removal of C # knife gate oxide g 148 also caused the loss of shallow trench isolation ⑷, and the thickness of this loss was about 50 people. Please refer to Figure 3e. After removing the photoresist covering the gate oxide ^ 144 Xiao 154, # use a thermal oxidation process, for example, to form a thickness in the portion C of the substrate 140 exposed through the second step ㈣ The gate oxide layer of i7A is about 15.8. In the above steps, the thickness of the shallow trench isolation is about 50A due to the removal of the gate oxide layer of 50A in thickness, including the loss of the shallow trench isolation of 14 J, 150, The loss 152 and 156 of isolation 142 from the shallow trench. Compared with the conventional method, the number of losses of shallow trench isolation is reduced, and the purpose of improving the isolation loss of the shallow trench can be achieved. The manufacturing process is not limited to this.
經過上述的熱氧化製程後，由於擴散速率的關係，A 13 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) ----------------------、可---------^· (請先閲讀背面之注意事項再填寫本頁} 586163 A7 B7 五、發明説明（ 部分之閘極氧化層厚度約為5入 ϋ #刀之閘極氧化層厚声 約為22Α，而C部分之閘極氧化層厚度約4 ΠΑ。值得= 意的是’本發明三閘極氧化層的厚度僅為舉例，可視實於 製程與元件所需而改變，本發明不限於此。 不 利用本發明閘極氧化層的制生 嘈的褢造方法，可使淺溝渠隔離 被餘刻的次數與程度減少，…來，因淺溝渠隔離損失 所造成的缺點，也同時被改善。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾’均應包含在下述之申請專利範圍内。 -----------------------、可---------^ (請先閲讀背面之注意事項再塡寫本頁} 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)After the above thermal oxidation process, due to the diffusion rate, the paper size of A 13 is applicable to China National Standard (CNS) A4 (210 × 297 mm) ---------------- ------ 、 may --------- ^ · (Please read the notes on the back before filling out this page} 586163 A7 B7 V. Description of the Invention (Some gate oxide thickness is about 5入 ϋ #The thickness of the gate oxide layer of the knife is about 22 Α, and the thickness of the gate oxide layer of part C is about 4 Π Α. It is worth noting that the thickness of the three-gate oxide layer of the present invention is only an example, which can be seen in The process and components need to be changed, and the present invention is not limited to this. Without using the noisy fabrication method of the gate oxide layer of the present invention, the number and degree of shallow trench isolation can be reduced for a short time. The shortcomings caused by the loss of trench isolation are also improved at the same time. As will be understood by those skilled in the art, the above description is only a preferred embodiment of the present invention and is not intended to limit the scope of patent application of the present invention; Equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application. ----------------------- 、 may --------- ^ (Please read the precautions on the back before 塡Write this page} This paper is printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the paper size is applicable to China National Standard (CNS) A4 (210X297 mm)