TW584951B - Decoupling capacitor circuit with dynamic control - Google Patents
Decoupling capacitor circuit with dynamic control Download PDFInfo
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584951584951
- __ 一 五、發明說明(1) 【發明所屬之技術領威】 本發明是有關於一種電去耦合電容電路結構,且特別是有 關於一種可動態調整之去耦合電容電路結構。 【先前技術】 由於半導體技術的快速發展’在一很小的面積上常常是由 數百個以上的電晶體以及電容器來組成整合電路。這4b元 件最基本的組成如:MOS電晶體’透過這些MOS電晶體來护^ 制閘極動作,組成一系列的邏輯訊號等。 " 傳統上,當外加電壓低於1伏後,於整合電路之周邊會需要 一些去耦合電容(decoupling capacitor )電路用以抑制 雜訊,其傳統電路架構如第一A圖與第一B圖所示,於外加 高電壓(VDD )與低電壓(VSS )間,利用源極與集極相連 接之PM0S電晶體101或NM0S電晶體102串接電阻100來形成去 耦合電容電路。或是如第一c圖所示,使用耦接之PM〇s電晶 體103與NM0S電晶體1〇4形成。 然而,隨著製程的精進,元件 的要求也跟著變窄,尤其當製 晶體之閘極氧化層亦隨之變薄 並使得去耦合電容電路用以抑 一方面,積體電路上漏電流的 源’造成線路負載過重,使得 密集度也越來越增加,線寬 程進步到0· 13微米後,M0S電 ’造成閘極漏電流之產生, 制雜訊之功能大為降低。另 情形將會耗去大部分的電 元件的驅動電壓將不足,元-__ V. Explanation of the invention (1) [Technical power to which the invention belongs] The present invention relates to an electric decoupling capacitor circuit structure, and particularly to a dynamically adjustable decoupling capacitor circuit structure. [Previous Technology] Due to the rapid development of semiconductor technology, an integrated circuit is often composed of hundreds of transistors and capacitors on a small area. The most basic components of this 4b element are as follows: MOS transistors' protect gate action through these MOS transistors and form a series of logic signals. " Traditionally, when the applied voltage is lower than 1 volt, some decoupling capacitor circuits are needed around the integrated circuit to suppress noise. The traditional circuit architecture is as shown in Figures A and B. As shown, a decoupling capacitor circuit is formed between a high-voltage (VDD) and a low-voltage (VSS) by using a PM0S transistor 101 or an NMOS transistor 102 with a source and a collector connected in series with a resistor 100. Alternatively, as shown in FIG. 1c, a PMMOS transistor 103 and a NMOS transistor 104 are coupled to each other. However, with the advancement of the process, the requirements for components have become narrower, especially when the gate oxide layer of the crystal is thinned and the decoupling capacitor circuit is used to suppress the source of leakage current on the integrated circuit. 'As a result of the overload of the line, the density has also increased. After the line width has been increased to 0.13 micrometers, the M0S voltage has caused the gate leakage current and greatly reduced the noise suppression function. In other cases, the driving voltage of most of the electrical components will be insufficient.
第4頁 584951 五、發明說明(2) 件無法正常運作 發明内容】 本發明 能抑制 本發明 此架構 本發明 容電路 本發明 體開關 區塊運 生漏電 電流, 耗,並 的主要目 漏電流之 的另一目 可根據整 的再一目 架構,藉 較佳實施 元件,其 作情形, 流亦僅有 遠小於電 提高隔離 的就是在提供 產生。 的就是在提供 合電路之工作 的就是在提供 以降低電源之 例之去耦合電 中此開關元件 而動態截斷去 電晶體開關之 容元件之閘極 雜訊效能。 一種去耦合電容電路架構, 一種去耦合電容電路架構, 狀態進行動態調整。 一種可動態調整之去耦合電 消耗。 谷電路架構至少包括一曰 电曰曰 可根據對應之整合電路功能 耦合電容電路,因此即使2 源極與集極和通道戴止之漏 漏電流,因此可降電源消 【實施方式】 在不限制本發明之精 例,介紹本發明之實 明之精神後,當可應 種不同之整合電路中 可根據整合電路之工 神及應用範圍之下 施;熟悉此領域技 用本發明之去輕合 。其中本發明之去 作狀態進行動態調 ’以下即以一實施 藝者,在瞭解本發 電容電路架構於各 耦合電容電路架構 整以抑制漏電流之Page 4 584951 V. Description of the invention (2) The item does not work normally. Summary of content] The present invention can suppress the leakage current, current consumption, and main leakage current of the body switch block of the present invention. The other project can be based on the structure of the whole project, and with better implementation components, its operation situation, the flow is only much smaller than the electrical improvement isolation is generated. The purpose is to provide the switching circuit. The purpose is to provide the switching element in the decoupling circuit to reduce the power supply, for example, to dynamically cut off the gate noise performance of the capacitive element of the transistor switch. A decoupling capacitor circuit architecture, a decoupling capacitor circuit architecture, and the state is dynamically adjusted. A type of decoupling power consumption that can be dynamically adjusted. The valley circuit architecture includes at least one electrical circuit, which can be coupled to the capacitor circuit according to the corresponding integrated circuit function. Therefore, even if the source and collector and the channel and the leakage current of the channel are stopped, the power consumption can be reduced. The precise example of the present invention, after introducing the practical spirit of the present invention, can be applied in different integrated circuits according to the working spirit and application scope of the integrated circuit; familiar with the technology of the field to use the invention. Among them, the working state of the present invention is dynamically adjusted. The following is an implementation artist who understands the capacitor circuit architecture in the coupling capacitor circuit architecture to reduce the leakage current.
584951 五,發明說明(3) f生,並降低電源之消耗。 參閱第二A Μ _ 構 —w所示為本發明較佳實施例之去耦合電容電路架 本發明’之本:構明利用一電晶體開關,取代傳統之電阻。根據 之去巍:一ί容元件201串接一電晶體開關202形成本發明 源極與路架構,其中本發明之電容元件201可使用 f曰_ pW。連接之PM〇S電晶體或·05電晶體來形成,而 電:體開關202可為一 M0S電晶體。 ΐΐ參?第二A圖所示’電晶體開關2°2之間極引出-控制 體開關202之導通或切斷,當本 f日日 導通之狀況時,其功能就有如V,曰體開關202處於 示。 八力月匕就有如—電阻203,如第二B圖所 =二A圖’當電晶體開關2〇2處 其可此產生之電流僅為電晶體 呵炙狀况時, 截止下之漏電流,此漏 構下電容元件產生之閘極漏電流於傳,、先去麵合電容電路架 根據上述說明,本發明電晶體開 線路,可根據積體電路之使用壯 3極所5丨出之控制 導通或切斷。一般而言,於整個馨2控制電晶體開關202之 個功能區塊’而每一個功能區塊會;::: =常會包括數 路來隔離外界之雜訊,當整合電 去耦合電容電 區塊均會動作。換句話說,當未=作時,並非所有功能 統之去耦合電容電路來隔離外之=能區若是使用傳 1雜訊’由於閘極漏電流之 584951 五、發明說明(4) - 關係,仍繼續消耗電源,反之,本發明之電路架構,當所 連接之功能區塊未動作時,其會送出一控制信號,將本發 明去耦合電容電路架構20 0之電晶體開關202切斷,亦即: 此時去耦合電容電路架構20 0所可能產生之漏電流,僅為電 晶體開關2 0 2之源極與集極和通道間逆偏下之漏電流,^小 於電容元件之閘極漏電流,因此可降電源消耗,同時提$高 降低雜訊效能。 n584951 V. Description of the invention (3) F production and reduce power consumption. Referring to the second AM structure, w shows a decoupling capacitor circuit frame according to a preferred embodiment of the present invention. The present invention's structure: the use of a transistor switch to replace a conventional resistor. According to it: a capacitor element 201 is connected in series with a transistor switch 202 to form the source and circuit structure of the present invention, wherein the capacitor element 201 of the present invention can use f _ pW. The connected PMOS transistor or .05 transistor is formed, and the electric body switch 202 may be a MOS transistor. Pompano? As shown in the second figure A, the pole switch between 2 ° 2 and the control body switch 202 is turned on or off. When it is turned on every day, its function is like V, and the body switch 202 is shown. . The eight force moon dagger is like-the resistance 203, as shown in the second diagram B = two diagram A 'When the transistor switch 202 can generate only the current of the transistor, the leakage current at the cutoff In this drain structure, the gate leakage current generated by the capacitive element is passed. First, the capacitor circuit frame is first connected. According to the above description, the transistor of the present invention can be opened according to the use of integrated circuits. Control on or off. Generally speaking, the entire functional block of the transistor switch 202 is controlled throughout Xin2, and each functional block will ::: = will often include several channels to isolate external noise, when integrated electrical decoupling capacitor electrical area The blocks will all move. In other words, when it is not working, not all functions are decoupling capacitor circuits to isolate the external = energy range. If it is used to pass 1 noise 'because of gate leakage current 584951 V. Description of the invention (4)-relationship, It still consumes power. On the contrary, the circuit structure of the present invention sends a control signal when the connected functional block is not activated, and cuts off the transistor switch 202 of the decoupling capacitor circuit structure 200 of the present invention. That is: the leakage current that may be generated by the decoupling capacitor circuit architecture 200 at this time is only the leakage current under the reverse bias between the source and collector and the channel of the transistor switch 202, which is less than the gate leakage of the capacitor element. Current, so it can reduce power consumption and increase noise at the same time. n
以第一A圖之較佳實施例而言,使用源極與集極相連接之 PMOS電晶體作為本發明電容元件2〇1,其中PM〇s電晶體之通 道長度約為2um,而通道寬度約為2 X i〇5um,其電容大小約 為3· 6nF,此時閘極漏電流約為91lUA。一NM〇s電晶體作為 本發明電晶體開關2 0 2,採用NMOS係因為其電子之飄移速度 大於PMOS電晶體,因此使用NM0S電晶體可有較快之切換速" 度’然值得注意的是本發明之電路結構亦可使用pM〇s電晶 體控制,而所選用之NMOS電晶體通道長度約為〇. 26um,而 通道寬度約為105um,此時源極與集極和通道截止下之漏電 流約為7uA。一般而言,本發明之電晶體開關設計,通常採 用較長之通道設計,藉以降低漏電流。Taking the preferred embodiment of FIG. 1A as an example, a PMOS transistor with a source and a collector connected is used as the capacitor element 201 of the present invention. The channel length of the PMMOS transistor is about 2um, and the channel width It is about 2 X 〇5um, and its capacitance is about 3.6nF. At this time, the gate leakage current is about 91lUA. An NMOS transistor is used as the transistor switch 202 of the present invention. NMOS is used because its electron drift speed is faster than PMOS transistor. Therefore, using NMOS transistor can have a faster switching speed. The circuit structure of the present invention can also be controlled by using pMOS transistor, and the selected NMOS transistor channel length is about 0.26um, and the channel width is about 105um. At this time, the source and collector and the channel are cut off. The leakage current is about 7uA. Generally speaking, the transistor switch design of the present invention usually adopts a longer channel design to reduce leakage current.
參閱第三圖所示,為將本發明之電路架構應用於一雙電晶 體之去搞合電容電路300中。其中nm〇S電晶體301與PMOS電 晶體302可接收一控制信號以切斷去柄合電容電路3〇〇導 通。例如當去搞合電容電路3〇〇所連接之整合電路未動作 時’此時會送出一控制信號將電晶體3 〇 1與電晶體3 〇 2導 通,以將高電壓信號(VDD )與低電壓信號(vss )分別傳Referring to the third figure, in order to apply the circuit architecture of the present invention to a capacitor circuit 300 for an electric double crystal. Among them, the nmOS transistor 301 and the PMOS transistor 302 can receive a control signal to cut off the decoupling capacitor circuit 300. For example, when the integrated circuit connected to the capacitor circuit 300 is not activated, a control signal will be sent at this time to turn on the transistor 3 〇1 and the transistor 3 〇2 to connect the high-voltage signal (VDD) to low. The voltage signal (vss) is transmitted separately
第 頁Page
584951 五、發明說明(5) 遞給PMOS電晶體303與題⑽電晶體3 晶體。 閘極來截斷此兩電 由於本發明之去耦合電容電路架構可 話說當對應之整人雷政# Ab p^订動恶控制,換句 i 口冤路功能區塊未進行 ^ ^ 斷去耦合電容電路,因此即使產;;::,可動悲截 之閘極漏電流,因此可降電:消Ά時;1:電容元: 能。 U時提南降低雜訊效 雖然本發明已以—/4. ^ 定本發明,钮h較佳實 揭路如J",然其並非用以限 疋不知月,任何熟習此技藝者, 範圍内,當可作爭叙獻Μ ^不脫離本發明之精神和 圍·視德附_,因此本發明之保護範 圍田視後附之申請專利範圍所界定 584951584951 V. Description of the invention (5) Pass to PMOS transistor 303 and title transistor 3 crystal. The gates are used to cut off the two power sources. Because of the decoupling capacitor circuit architecture of the present invention, it can be said that when the corresponding person is Lei Zheng # Ab p ^ subscribe to evil control, in other words, the functional block of the wrong way is not performed ^ ^ Decoupling Capacitor circuit, so even if it is produced; ::, movable and tragic gate leakage current, so it can reduce power: when dying out; 1: capacitor element: Yes. U Titinan reduces the noise effect. Although the present invention has been settled with-/ 4. ^, The button h is better to reveal the road like J ", but it is not used to limit the unknown months, anyone who is familiar with this skill, within the scope It can be argued that it does not depart from the spirit and scope of the present invention, and is attached to the German patent. Therefore, the scope of protection of the present invention is defined by the scope of the patent application attached to Tianshi 584951.
圖式簡單說明 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、和優點能更明顯易 懂,下文特舉一較佳實施例,並配合所附圖式,作詳細說 明如下: 第一A圖至第一C圖所示為傳統之去耦合電容電路。 第二A圖繪示根據本發明第一較佳實施例之去耦合電容電路 概略圖。 第二B圖繪示根據本發明第一較佳施例之去耦合電容電路你 對等電路圖。 第三圖繪示根據本發明之第二較佳實施例之去耦合電容電 路概略圖。 【元件代表符號簡單說明】 100和203電阻 1 0 1和20 1源極與集極相連接pM〇s電晶體 102源極與集極相連接NM〇s電晶體 103、 303 和302 PMOS 電晶體 104、 202、301 和304 NMOS 電晶體 200和300去耦合電容電路Brief Description of the Drawings [Simplified Description of the Drawings] In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows : Figures A through C show the traditional decoupling capacitor circuits. FIG. 2A is a schematic diagram of a decoupling capacitor circuit according to the first preferred embodiment of the present invention. The second diagram B shows a circuit diagram of a decoupling capacitor circuit according to the first preferred embodiment of the present invention. The third figure shows a schematic diagram of a decoupling capacitor circuit according to a second preferred embodiment of the present invention. [A brief description of the symbols of the components] 100 and 203 resistors 1 0 1 and 20 1 The source is connected to the collector pM0s transistor 102 The source is connected to the collector NM0s transistor 103, 303 and 302 PMOS transistor 104, 202, 301, and 304 NMOS transistors 200 and 300 decoupling capacitor circuits
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TW92109808A TW584951B (en) | 2003-04-25 | 2003-04-25 | Decoupling capacitor circuit with dynamic control |
SG200402720A SG115691A1 (en) | 2003-04-25 | 2004-04-23 | Dynamically adjustable decoupling capacitance to reduce gate leakage current |
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TW92109808A TW584951B (en) | 2003-04-25 | 2003-04-25 | Decoupling capacitor circuit with dynamic control |
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TW200423366A TW200423366A (en) | 2004-11-01 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113964195A (en) * | 2021-09-18 | 2022-01-21 | 珠海妙存科技有限公司 | Layout of decoupling capacitor circuit structure |
TWI757020B (en) * | 2020-12-31 | 2022-03-01 | 瑞昱半導體股份有限公司 | Leakage current blocking circuit and leakage current blocking method for decoupling capacitor |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI757020B (en) * | 2020-12-31 | 2022-03-01 | 瑞昱半導體股份有限公司 | Leakage current blocking circuit and leakage current blocking method for decoupling capacitor |
CN113964195A (en) * | 2021-09-18 | 2022-01-21 | 珠海妙存科技有限公司 | Layout of decoupling capacitor circuit structure |
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