TW583512B - Lithographic manufacturing process, lithographic projection apparatus, and device manufactured thereby - Google Patents

Abstract

A lithographic manufacturing process is disclosed in which a first information on a first lithographic transfer function of a first lithographic projection apparatus is obtained. The information is compared with a second information on a second lithographic transfer function of a second lithographic projection apparatus, for reference. The difference between the first and second information is calculated. Then the change of machine settings for the first lithographic projection apparatus, needed to minimize the difference, is calculated and applied to the first lithographic projection apparatus, such that the match between the first and second lithographic projection apparatus of any pitch-dependency of feature errors is improved.

Description

583512 5. Description of the invention (1) The present invention relates to a lithographic manufacturing method including the following steps:-providing a first lithographic projection device;-providing a substrate whose substrate is at least partially covered by a layer of radiation-sensitive material,-providing a A radiation projection beam using a radiation system; ^.-Using a shaping device to give the projection beam a pattern on its cross section; two-projecting the radiation shaped beam onto a target port using a projection system to form a projection Image;-Provide a second lithographic projection device for reference. The π molding device π used here should be widely explained. It can be used as reference to impart an incident radiation beam with a molding cross section, corresponding to a pattern of the target port generated on the substrate. The "light valve π" can also be used. It is used in this content. Generally speaking, the pattern will correspond to a special functional layer of the equipment generated in the target port, such as an integrated circuit or other equipment (shown below). Examples of such molding devices include:-a cover The concept of a cover is well known in lithography, and it includes cover types such as two-bit, alternative phase displacement, and attenuation phase displacement, and · different mixed cover types. According to the cover Pattern, placing the cover in the radiation beam will cause radiation to be injected into the cover either in selective transmission (in this case, transmission cover) or in reflection (in this example, a reflective cover). For example, the support structure will generally be a cover, which ensures that the cover can be maintained at a desired position of the incident radiation beam, and that it can be moved relative to the desired light beam.-Programmable mirror array. Assume One example is a matrix may address

O: \ 71 \ 71661.ptd page 5 and a reflective surface. The address area of the device's basic primary light, such as diffracted light, leaves only the light beam. The matrix address is based on the address of the matrix addressing surface. The appropriate electronics can be used. More information can be collected, for example, from 1 9 3 , Which can be incorporated herein by reference. The support structure can be used as a frame or as fixed or movable. An example is US 5, 2 2 9, 8 72. The example of the support structure can be combined into one that needs to be fixed or movable. Other possibilities are to cover the surface in a particular location; in any case, this example discusses the broad content of the molding device. For example, in the integrated circuit (IC s) system, a layer corresponding to an IC can be generated for printing on a standard substrate (such as a silicon wafer), which has been coated with a single layer of radiation and a single wafer. Continuously radiate one of the shadow systems containing adjacent target ports, one at a time. On the surface of the cover with molding, the two are different. In a type of lithographic projection device, each cover pattern is radiated on the target port; a wafer stepper. In an alternative device-a 583512 V. Description of the invention (2) The surface has a viscoelastic control layer such that the reflecting surface reflects incident diffraction light behind it; therefore, the molding becomes shaped. This requires a device to perform. US 5, 296, 891 and US 5,523 on the mirror array are in a programmable mirror array. The table, for example, can be a programmable LCD array as needed. This structure is incorporated by reference. As above, the frame or table, for example, can be considered for the purpose of simplification. The general principle of this text's guiding example involving an overlay should be considered as the above-mentioned lithographic projection device can be used. In this example, the molded circuit pattern, and the pattern may be a plurality of dies, on a substrate (sensitive material (photoresist). Generally, the entire network can be passed through the current injection device through a cover The differences between overlying types of systems can be identified by exposing the entire device to the general reference.

O: \ 71 \ 71661.ptd Page 6 583512 5. Description of the invention (3) General reference is a stepping and scanning device-each target port is a projection beam in a predetermined reference direction (the π-scanning direction) The cover pattern is irradiated by a program scan, and the substrate surface is scanned in parallel or anti-parallel direction simultaneously. Generally, the projection system will have a magnification factor M (normally <1), and the speed V should be scanned here. The substrate table will be a coefficient M times the scan mask cover table. More information about lithography equipment discussed here can be scanned from US 6,046,792, incorporated by reference. In the manufacturing process using a lithographic projection device, a pattern (eg, in a cover) is imaged on at least a portion of a substrate covered by a layer of radiation-sensitive material (photoresist). Prior to this imaging step, the substrate can be subjected to different processes, such as coating a base layer, photoresist coating, and a soft baking. After the exposure, the substrate can be subjected to other procedures, such as exposure baking (PEB), development, hard grilling, and measurement inspection of the image features. The array of these procedures can then be subjected to different procedures such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc., all of which tend to complete a separate layer. If several layers are required, then the overall procedure, or an intervening variable, will be repeated for each new layer. Finally, an array device will be presented on the substrate (wafer). The devices are then separated from each other by a technique such as cutting or sawing, when the individual devices can be mounted on a carrier, connected to the pins, etc. Additional information on such procedures can be obtained, for example, from "Microchip Manufacturing: A Practical Guide to One of Semiconductor Programs" • Third Edition, by Peter van Zant,

Published by McGr aw Hill Publishing Company in 1997, ISBN 0-07-067250-4, incorporated herein by reference. For the sake of simplicity, the projection system can be referred to as a π lens.

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V. Description of the invention (4) Two ί 2 2 Ϊ 二 货 广 ’is explained as including different types of projection systems, including ΐ ί ΐϊ 22 reflective optical lenses, and catacHoptnc system. = Tian ,; 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd, 2nd. In addition, the lithographic apparatus may be performed when one or more tables are used for exposure by two or more tables. The two-step lithography device is described ', for example, in US 5, 9 69, 441 and ㈣ 9 8/4 0 79 1, which are incorporated herein by reference. There is a known problem of CD proximity coupling in lithography. It is about a phenomenon known as the optical proximity effect. This effect is caused by an existing difference in the diffraction pattern to isolate features such as compared to density features. Density features can include net patterns and near-interval periodic features. For example, this optical proximity effect results in a critical dimension (CD) in density and many isolating lenses when printed simultaneously. This special effect will refer to, for example, an abnormal CD pitch; the printed CD is dependent on the pitch (inverse of the spatial frequency) where a feature with a critical dimension occurs. The abnormality of the CD distance can also depend on the lighting settings used. In principle, the so-called traditional light emission mode has been used to distribute the intensity of the dish-like intensity of the illumination radiation to the light beam of the projection lens. However, with the tendency to have smaller features, the off-axis lighting mode has become standard to improve the program window, such as the exposure range, for small features. In any case, abnormal CD spacing becomes worse for off-axis lighting patterns, such as ring lighting.

One solution to mitigate CD pitch anomalies has been applied to optical proximity correction (OPC) by varying characteristics from plate-making cameras. According to a deviation method, the feature is deviated, for example, by more isolation of the cover plate-making camera

583512 V. Description of the invention (5) The lines are even thicker. The images on the substrate are printed with the same horizontal dimension as density lines. In another type of deviation, a terminal correction is applied such that the lines, regardless of isolation or density, are printed at the correct length. Regardless, at smaller pitches and with off-axis lighting, the CD's functional change with pitch is greater, and more deviation lines have been applied and such deviations have become more complicated. OPC is discussed, for example, in the SPIE Book 40,000, pages 1015-1023, π automatic parallel optical proximity correction and verification system π, by Wat an abe et al. Better yet, advanced software algorithms and very complex overlays are needed for OPC. This significantly increases costs. In the case where different lithographic projection devices are used in a lithographic manufacturing process step that includes OPC (such as a plate-making camera with a non-machine specific offset pattern), these lithographic head projection devices should then have a substantially smaller CD The pitch is abnormal for effective OPC. This coupling with a different CD pitch is generally for a selected feature (dense or isolated) of the selected CD pitch. For the characteristics of spacing rather than one of the choices, the coupling can be very poor or even lose tolerance. It is an object of the present invention to alleviate the above problems. This and other objects can be achieved according to the lithographic manufacturing process of the present invention specified in the preamble, which is characterized by: obtaining first information of a first lithographic transmission function from a projection image of a radiation sensitive layer; using a second lithographic The projection device obtains the second information referenced by the second lithographic transmission function; calculates the difference between the first information and the second information; calculates the change in the machine settings of the first lithographic projection device to at least the machine

O: \ 71 \ 71661.ptd Page 9 583512 V. Description of the Invention (6) One of the device settings to minimize the difference; and the change in calculations applied to the machine settings. It is known that the image characteristics of the projection system can be characterized by an optical transfer function (OTF) (see, for example, π image science published by JC Dainty in the College Journal, 1974). This function description is provided by the projection system. Isolate the transmission of frequency components. The printed pattern features a specific spatial frequency spectrum, and the frequency spectrum of the image of the pattern produced by the product with OTF spectrum. Generally, the OTF is a reduction function to increase the spatial frequency As a result, an isolated feature is mapped differently from a density feature (the spatial frequency spectrum of an isolated feature contains a substantially lower spatial frequency than the frequency spectrum that occurred in the dense feature). Similarly, a lithography manufacturing process step Can be characterized by a lithographic transfer function, see eg "LTFn. The LTF describes the transmission of the spatial frequency from the pattern to be printed, and so far the pattern is to be printed. It is clear that LTF is not unique. For example, the substrate's program has been subjected to previous and subsequent exposures (as described above), which can significantly affect the spatial frequency content of a printed pattern. Moreover, a program operating on a single lithographic projection device can lead to different LTFs. This is because, assuming a specific imaged pattern, machine settings such as, for example, exposure dose and lighting settings can significantly affect the printed pattern. Undeniably, different lithographic projection devices, even of the same type, will have different LTFs for a particular process step. This can be caused by the residual calibration error set by the machine and the residual aberration error of the lenses of different lithographic projection devices. Moreover, lithographic projection devices of different ages or types, although operating in the same image specifications, can produce different LTFs and factors

O: \ 71 \ 71661.ptd Page 10 583512 V. Description of the invention (7) Therefore, due to, for example, aberration errors, different printed patterns are part of the nominal design of each (first and second) projection system Serving. Because an LTF is within the reality of observable lithography via lithographic feature errors, coupling LTFs can be achieved substantially by coupling the lithographic feature errors with distance independence, such as the difference in CD spacing. It is not necessary to understand the first LTF and the second LTF at all pitches. For the purpose of coupling, the sufficient first information of the first LTF may be any lithographic error that occurs in the printing feature, where the magnitude of the error is determined by the feature spacing of the feature. This error can be measured, for example, using commercially available lithographic simulation software, such as Prolit hTM, So 1 id-CTM or Lith oC ruise rTM. For example, if there are specific (important) imaged pattern features, both the The I-aberration of the projection system, the existing data considers the radiation sensitive layer of the substrate, and the existing radiation beam characteristics such as radiant energy and wavelength, and the prediction of the magnitude of the specific error of the feature can also be completed using simulation programs. Similarly, the second information can be measured or calculated, for example. This difference in error magnitude can then be determined for the target spacing. Coupling small changes in the machine settings through the introduction, it is known to affect the characteristic error and calculate the corresponding changes in the feature errors for several intervals. The relationship between the coefficient quantified feature error size and the machine setting changes can be established. These coefficients then also establish the difference between the characteristic error and the reference characteristic error of the machine setting change from the target spacing. If the number of target intervals equals the number of machine setting changes that can be coupled, j The above calculation results in a set of equations where the number of equations equals the number of unknown machine setting changes (required for coupling). The set of equations can be

O: \ 71 \ 71661.ptd Page 11 583512 V. Description of the invention (8) The number of characteristic distance errors is more than a weighted minimum distance. Ideally, the original structure of the distance error device is now clear. To the principle which is available in principle, the coupling of the current library is based on the group, such as according to the specific characteristics of the light, and the perimeter of the characteristics, and the errors are based on the specific characteristics of the printing and machine selection. Molded in the release range, the difference caused by the difference and the use of the square difference feature can be combined within a single layer (small pitch) feature. The external setting is changed between the two better results and the other is the lithographic pattern. The interval is resolved by irrational reference feature error. If the number of machines in the room is set, one can instead minimize the differences by, for example, minimizing (a minimum square component). This minimization will produce a set of machine-targeted ways of changing the coupling depending on the error. Whereas the set of machine settings found by the law was changed, the different machines used in a particular lithographic manufacturing process were modified. The plane is particularly caused by the close coupling of CD. The exposure energy can be used to modify the isolation structure. Two exposures can be used to affect the printed CD (exposure energy and, for example, Σ outward) spacing and to occur in close coupling between the two substantially complete CDs. The level is the group or group of coefficients that will quantify the machine setting changes and the relationship between the independent error differences can also be stored in the data manufacturing process step data, which corresponds to the lighting and NA settings. The CD coupling on the other level is idealized, indicating that the double exposure molding is separated into two sub-patterns, each of which is characteristic. A range pitch contains a pitch typically used for density that is caused by the interference of two beams. The norm for this distance. The main point of close coupling of CD is that the exposure energy is misaligned and the two are out of the distance. It is known that CD is changed to light energy. Existing, one

O: \ 71 \ 71661.ptd Page 12 583512 5. Description of the invention (9) Poor. Coupling can be achieved via an energy offset, which results in an offset of the CD from the pitch curve. Other ranges of these spacings include spacings typically used to isolate features. Here, the image is caused by three-beam interference. Therefore more parameters play a role: focus and therefore spherical aberration, condensation and exposure energy. For light closing, it is preferable to generate an offset between CD and the pitch zone line through an exposure dose offset, and to generate a deviation of the CD relative pitch curve through a Σ setting change: shift (rotation). This method results in excellent CD coupling close to a large range. According to another aspect of the present invention, it provides a lithographic projection device including:-a radiation system for providing a projected beam of radiation;-a support system for supporting a molding device that functions to provide a desired pattern according to a desired pattern Shaping the projection beam;-a substrate table for holding a substrate;-a projection system for projecting the shaping beam on a target port of the substrate;--machine settings can be applied to at least one of the exposure energy settings and lighting settings It is characterized by further including: 'the device is used to change the machine settings; a processor is used to calculate-the difference between the first information of a first lithographic transmission function and the second information of a second lithographic transmission function; -A change in one of the machine settings is applied to at least one of the machine settings to minimize the difference. Although specific references can also be reached based on the use of the present invention in the manufacture of 1C devices

O: \ 71 \ 71661.ptd Page 13 583512 5. The description of the invention (ίο) should explain declaratively that the device has other possible applications. For example, it can be used in manufacturing integrated optical systems, guiding and detecting patterns in magnetic interval memory, liquid crystal display panels, and thin-film magnetic heads. Skilled artisans will prefer, such as the content of alternative applications, any other π plate camera π used in this article, π wafer π or π die π should be considered through the traditional "cover π" Substrate &quot; and π-standard ports "are replaced separately. In this document, the π radiation π and π beam π are used to include all types of electromagnetic radiation, including ultraviolet rays (such as having a wavelength of 3 6 5, 2 4 8, 1 9 3, 1 5 7 or 1 2 6 nm). And EUV (ultra-high ultraviolet, such as having a wavelength in the 5-20 nm range). A specific example of the present invention will be described, by way of example only, with reference to the accompanying drawings, wherein: FIG. 1 illustrates a lithographic projection device according to a specific example of the present invention; It is n m along the vertical axis of this CD, as in printing, and n m along the horizontal axis of the given pitch. Figure 3 shows the difference between the CD pitch anomaly and a reference CD pitch anomaly. It is n m along the vertical axis of this CD, as in printing, and n m along the horizontal axis of the given pitch. Figure 4 shows a graph of anomalous CD spacing showing the effects of a spherical aberration leading to non-coupling. Along the vertical axis of the CD, as in printing, it is nm, and along the horizontal axis of the given pitch, it is also n m. Figure 5 shows a graph of the difference between the CD anomaly and a reference CD anomaly, and the effect of changing machine settings. Along the vertical axis of the CD, as in printing, it is n m, and along the horizontal axis of the given distance, it is also

O: \ 71 \ 71661.ptd Page 14 583512 V. Description of the invention (11) n m ° Figure 6 shows a diagram illustrating the abnormality of the CD spacing caused by the non-coupling effect caused by the use of double exposure spherical aberration. It is n m along the vertical axis of the CD, as in printing, and n m along the horizontal axis of the given pitch. In these figures, corresponding reference symbols indicate corresponding components. Specific Example 1 FIG. 1 illustrates a lithographic projection apparatus according to a specific example of the present invention. The device comprises: a radiation system E X, I L for supplying a projection beam P B (eg UV radiation). In this particular example, the radiation system may also include a radiation source LA; the first target table (mask table) MT provides a mask holder for holding the mask MA (such as a reticle), and is connected to A first positioning device for accurately positioning the mask relative to the project PL; a second target table (substrate table) WT provided to a substrate holder for holding a substrate W (such as a photoresist-coated silicon wafer), and Connected to a second positioning device for accurately positioning the substrate relative to the item PL; • a projection system (· 'lens') PL (such as a quartz and / or CaF2 lens system or a catadioptric system containing components made of these elements) Lens element) is used to image the irradiation port of the cover MA on a standard port C of the substrate W (if it contains one or more dies). As described above, the device is a transmission type (if it has a transmission cover) Anyway, in general, it can be a reflective type, for example (with a reflective cover). Alternatively, the device can use another type of molding device,

O: \ 71 \ 71661.ptd Page 15 583512 V. Description of the invention (12) A programmable mirror array as described above. The source LA (such as a UV excimer laser) generates a radiation beam. This beam is transmitted into a lighting system (illuminator) IL, either directly or in the presence of a lateral adjustment device, such as a beam expander Ex. The illuminator IL may include an adjacent device AM for setting the outward and / or inward radial content of the intensity distribution in the beam (generally, the reference is σ outward and σ inward). In addition, it will generally include different other components, such as an integrator IN and a capacitor C 0. In this way, the light beam PB incident on the cover MA has a uniformity and intensity distribution in the cross section. It should be understood that regarding FIG. 1, the source LA can be in the housing of the lithographic projection device (usually when the source L A is a mercury lamp cannon), but it can also be remotely controlled with the lithographic projection device. The radiation beam is introduced into the device (If assisted by a suitable guide); the latter scenario is usually when the source LA is an e X cimer laser source. The scope of the present invention and patent application includes two scenarios. As a result, the light beam PB intercepts the cover MA, which is held on a cover surface MT. It has the cover MA traversed, the light beam PB passes through the lens PL, and it focuses the light beam PB on a standard port C of the substrate W. With the assistance of the second positioning device (and the inter-magnet measuring device I F), the substrate table WT can be accurately moved, such as positioning different port C in the path of the beam PB. Similarly, the first positioning device can be used to precisely position the path of the mask MA relative to the beam P B, such as after a mechanical retrieval of the mask MA from a mask library. Generally, the movement of the target table MT will be realized with the help of a long-stroke module (process positioning) and a short-stroke module (fine positioning), which are not included in the description of Figure 1. In any case, in the case of a wafer stepper (as opposed to a step-scan device), the cover MT can then be connected to a short-stroke actuator or can be fixed

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5. Description of the invention (13). The device described can be used in two different modes. 1. In stepping mode, the cover MT is basic.

The overlay image is projected in a single event (such as a single &quot; flash &quot;) on U 及, and an entire substrate table WT is then shifted in the X and / or y direction to a target port C. It can pass through the beam PB exposure; get different port C

2 · In the scan mode, basically the same situation is given, except one is not exposed in a single, flash. "Alternatively, the cover table" quotes two existing C-movable (so-called) scanning directions, (Such as the y direction) has a projection beam p B caused to scan an overlay image in a given direction; and the speed v of the warrior, so that the table WT moves synchronously at the same or opposite speed v = Mv: As a result, the size of the substrate lens PL (typically M = 1/4 or 1/5). Here, where M is the target port C, it can be exposed without any compromise of resolution. The first is relatively large. The typical CD pitch anomaly diagram in Figure 2 is illustrated. CDs and pitches printed along the vertical are described separately. The figures are presented on a 7 h flat axis.

One of the characteristics of the lithography manufacturing process: the wavelength λ of the radiation beam is 24, and the special concave hole is NA = 0 · 7, and the σ outward and σ inward settings are each ^ 'the number 0.55 and the standard The CD is called 130 nm. FIG. 21 shows the second microdensity <Hiroshita 0.8 and CD pitch abnormality characteristics. For simplicity, this device is a reference to the I-shirt, with the other first lithographic projection device being measured. It will simply refer to, for example, Figure 1. Figure 22 shows that the CD spacing of a tool is abnormal. The tool i ° a small change has the effect of changing the parallel vertical axis of Figure 22, the agent f of the house Γ vote Γ, the ⑶ adjacent consumption, is the nm unit and the opposite should be from the first 21 and 22 in the figure, such as the spacing A function drawn. The exposure dose adjustment has the same rotation

583512 5. Description of the invention (14) The switching effect is shown in the graph of Fig. 4, as shown by arrow 23, and can be used to transfer the CD to the near-nano level (see the horizontal axis of Fig. 4). To improve CD proximity coupling, the effect of this change, for example, σ outward tool settings can be used. This effect is illustrated in FIG. 2 and a good neighbor rotates 24 at one of the points 25 along the part of FIG. 22 where the pitch is greater than a pitch Pr: Pi · IIλ / ΝΑ (1) The pitch Pr is shown in the figure 2 is marked as a pitch of 2 6. Therefore, a σ outward adjustment results in abnormal CD pitch diagrams as shown in Figures 221 and 222 of Figure 2. The corresponding effect of the σ outward adjustment of the CD spacing anomaly is shown in Fig. 3, and the rotation leads to the proximity coupling of CDs in Figs. 3 2 and 3 3 again. It is clear that a combined σ outward change and exposure dose change result in the conversion. Figure 3 shows the idealization of the zero-nanometer level in Figure 3. In another specific example, the pattern is divided into two sub-patterns, one sub-pattern substantially contains a pitch feature smaller than Pr, and the other sub-patterns substantially contain a pitch feature larger than Pr. The advantages of pattern separation with respect to the proximity coupling of CDs (and the feasibility of exploring double exposures) become clear when, for example, the effects of the presentation of higher order residual spherical aberrations of the projection system are considered. Figure 4 shows the abnormal CD spacing diagram of the lithography manufacturing process described in the previous specific example, where the reference tool does not have spherical aberration (Figure 41), and the projection system of the tool (which is also coupled) exists by Zern 0.05 wavelength of spherical aberration characterized by ike coefficient Z 16 (Figure 42). Figure 5 shows a detailed diagram of the calculation, resulting in CD proximity coupling, see Figure 51. For dense pitches (pitch &lt; P r), the coupling is between +1 and -1 nm, however, for isolation pitches (& Pr), a non-coupling occurs up to + 3 nm. Because of double exposure, it can now be changed

O: \ 71 \ 71661.ptd Page 18 583512 V. Description of the invention (15) It is well independent of the CD proximity coupling that has been obtained> Pr distance and sufficient CD proximity coupling that is smaller than the Pr distance. This is shown in Figure 5, where a combination of exposure dose (indicated by arrow 52) and σ outward adjustment (indicated by arrow 53) is used as a secondary pattern with a pitch> Pr to idealize the CD proximity coupling. The overall CD proximity coupling, which is the result of the double-exposure image, is shown in Fig. 6: a fit that is better than + and -1 n m is obtained due to the complete range of the distance-between the patterns. -The specific examples of the present invention have been described above. Please understand that the present invention can also be applied as described above. These descriptions are not intended to limit the invention.

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Claims (1)

583512 .s… ....: .㈣ 号 90113618_ ^ 月 月 上 上 泰 吐 1. A lithographic manufacturing method, comprising the following steps:-providing a first lithographic projection device;-providing a substrate, at least part A substrate covered by a layer of radiation-sensitive material;-providing a radiation projection beam using a radiation system;-using a shaping device to give the projection beam a pattern on its cross-section;-the shaped beam projecting the radiation is in use Providing a projection image on the target portion of a projection system;-providing a second lithographic projection device as a reference; characterized by: projecting an image from a radiation-sensitive layer to obtain first information on a first lithography In the transmission function; using the second lithographic projection device to obtain the second information for reference in the second lithographic transmission function; calculating the difference between the first information and the second information; calculating the machine of the first lithographic projection device Changes in settings to minimize at least one of the machine settings; and changes in calculations using machine settings. 2. The lithographic manufacturing method as described in the first item of the patent application scope, wherein the change of the computer setting includes calculating a plurality of quantifications of the difference and the relationship between at least one of the machine settings of the first lithographic projection device that affects the difference. coefficient. 3. The lithographic manufacturing method according to item 2 of the scope of patent application, wherein the coefficient includes the different lighting settings for at least the radiation system and / or the projection system. O: \ 71 \ 71661-921212.ptc Page 21 583512 _ Case No. 90113618_p Year Month / Two Days __ VI. Multiple Coefficient Groups for Patent Application One; and the different characteristics of the projected pattern. 4. The lithographic manufacturing method according to claims 1 and 2, wherein the change in the machine setting includes at least one change in exposure dose and one change in lighting setting. 5. For the lithographic manufacturing method in the first scope of the patent application, the first information and the second information are abnormal CD spacing. 6. The lithographic manufacturing method according to item 1 of the patent application range, wherein the pattern includes multiple sub-patterns, each of which has a respective range of a spatial frequency, and the shaped beam of projection radiation therein includes two in a target portion. Steps are calculated and used at each step of the machine setting change. 7. The lithographic manufacturing method according to item 6 of the patent application range, wherein the respective ranges of the spatial frequency are selected so that NAA0.5. Λ) &gt; space frequency> NA / λ, and NA / λ &gt; space frequency. 8. A lithographic projection device comprising:-a radiation system for providing a projected beam of radiation;-a support system for supporting a molding device which functions to shape the projection beam according to a desired pattern;-a The substrate table is used to hold a substrate;-a projection system is used to project the shaping beam on a target portion of the substrate;-the machine setting can be applied to at least one of the exposure energy setting and the lighting setting; and is characterized by further including: A device used to change machine settings; used to calculate a processor O: \ 71 \ 71661-921212.ptc Page 22 583512 O: \ 71 \ 71661-921212.ptc Page 23