TW578272B - Manufacturing method of bottle shaped trench - Google Patents

Abstract

This invention provides a manufacturing method of bottle shaped trench, which comprises: firstly, providing a semiconductor substrate with a hardmask layer, which has a trench formed thereon; conformally forming a first liner layer, a second liner layer, a conductive layer and a third liner layer sequentially on the semiconductor substrate and the STI surface, in which the first liner layer and the second liner layer are different; then, filling up a predetermined depth of the trench with a sacrificial layer which is used as an etching hardmask to remove the third liner layer, and removing the sacrificial layer; performing oxidation step to the conductive layer to form an oxide layer which is used as an etching hardmask to sequentially remove the third liner layer, the conductive layer, the second liner layer and the first liner layer to expose the surface of the semiconductor substrate on the bottom of the trench; and using the oxide as a hardmask to etch the semiconductor substrate to form a bottle shaped trench.

Description

578272

TECHNICAL FIELD The present invention relates to a method for manufacturing a trench, and more particularly, to the formation of a bottle-shaped deep trench for a trench capacitor of a dynamic random access memory (DRAM). Prior technology / ° As the density of dynamic random access memory continues to increase, memory cells (memojy cells) are also moving in the direction of reducing size to increase density, and as the DRAM process continues to shrink, the depth of deep trenches The size of the aperture is also reduced accordingly. When the aspect ratio of the trench has exceeded 35: 1, the deep trench as a capacitor storage area will be limited accordingly. In addition, since the capacitance is proportional to the surface area of the capacitor electrode plate, the trench capacitance The electrode == area is the product of the depth of the trench and the circumferential area of the trench, and the circumferential area of the trench is related to the aperture of the trench. In other words, when the process technology shrinks from 0.2um to as small as 0.8 μm, the trench The hole diameter of the trench becomes smaller accordingly, and it is difficult for the trench capacitor to obtain a sufficient surface area to maintain the capacitance. Furthermore, in order to form a deep trench with a smaller critical dimension of f, it is necessary to choose a method of high aspect ratio = to carry out money engraving, and at the same time, as the critical dimension of the trench is smaller, the vertical contour is maintained. -In order to increase the trench storage capacitance which is reduced due to the shrinking of the size of the dram, it is necessary to develop a method for increasing the storage capacitance, such as a method of etching a semiconductor substrate to enlarge the bottom of the trench to form a bottle shaped trench. Taking the traditional manufacturing process as an example, please refer to Figures 1a-1j. Figures 1a-1j are schematic diagrams showing the conventional manufacturing of bottle grooves.

578272 V. Description of the invention (2) First, a semiconductor substrate 101 is provided. On the semiconductor substrate 101, a pad layer 102, a hard cover curtain layer 103, and a patterned photoresist layer (not shown) having openings are formed. The patterned photoresist layer is used as a mask, and the hard mask is etched to form an opening in the hard mask layer 103, and then the pad layer 102 and the semiconductor substrate 101 are etched to form a trench 10. 4. Among them, the semiconductor substrate 101 is, for example, a silicon substrate; the material of the cushion layer 10 is, for example, a nitride layer; and the material of the hard cover curtain layer 103 is, for example, a borosilicate glass insulation layer or a nitride layer and borosilicate glass. The combination can make the quality of the trench better and the conditions such as depth easier to control; a thin oxide layer can be formed between the semiconductor substrate 101 and the pad layer 102, which can make the semiconductor substrate 1 〇1 and the hafnium layer 1 〇2 Better adhesion. Please refer to FIG. Lb. Next, the surface of the semiconductor is exposed in the groove 104, and a first liner is conformably formed on the surface of the substrate 101. The oxide layer 105 that thermally oxidizes the semiconductor substrate 101 has a thickness of about 25 to 35 A; and conforms to form a second silicon oxide layer on the surfaces of the semiconductor substrate 101 and the oxide layer 105. A liner layer is, for example, a nitrided layer 106 formed at a temperature of 700 to 720 degrees Celsius, and has a thickness of about 45 to 55 A; then, at a temperature of 49 () to 5 10 degrees Celsius, under nitrogen, A conductive layer 107 having a thickness of about 75 to 85 A is compliantly formed on the surface of the chemical layer 〇6. The conductive layer 107 is, for example, a polycrystalline silicon layer or a worm-like fragment. First, referring to FIG. 1c, a third liner layer is conformably formed on the surface of the conductive layer 107, and the third liner layer is, for example, an oxide layer 108. Then, a sacrificial layer (not shown) is formed on the oxide layer = 8, and a mixed solution (SPM) of sulfuric acid and hydrogen peroxide is used as an etching solution to perform wet etching to remove the sacrificial layer. ); 91110; Clairc.ptd V. Description of the invention (3) Leave the sacrificial layer at the bottom of the trench 104, the photoresist layer 109 at the bottom of the trench 104, and the thickness of the photoresist layer 109 can be engraved according to fθ 1 money The longer the time is, the thinner the photoresist layer 1G9 is. The shorter the interval is, the thicker the photoresist layer 109 is. The shorter the photoresist layer 109 is, the higher the photoresist layer 109 can be. Replace with glass. Eight eyes refer to the first figure, and then, the photoresist layer 109 is used as the sacrificial layer 101 to mask the oxide layer 108 ′ to leave the bottom of the trench 104. After that, the same method is used for sulfuric acid and hydrogen peroxide. At first, the mixed solution is an etching solution to perform wet etching, and the photoresist layer 109 is completely removed. Please refer to the If diagram. At a temperature of 5000 to 1100 degrees, a nitride layer is formed on the surface of the conductive layer 107 on the exposed surface. Since the temperature at which the nitrided layer 110 is formed is quite high, it leads to the lattice formation of the conductive layer 107 or the stupid stone layer, and voids are formed in the conductive acoustic IQ ?. Please refer to FIG. 1g, and then use the nitride layer 11 () as an etching mask to sequentially remove the oxide layer 108 and the conductive layer 107 which are not covered by the nitride layer 11 at the bottom of the trench 107. The conductive layer i07a remains. . Referring to Figure 1h, using the acid (Hs P 0 *) as the etching liquid, the nitride layer 1 1 0 is wet-etched, and at the same time, the nitride layer 10 on the exposed surface at the bottom of the trench 1 0 6 will also be removed. Please refer to Figure 1i, using buffered hydrofluoric acid (BHF) as the etching solution, and using the conductive layer 107a and the nitride layer i6a below as the etching mask to oxidize the exposed surface at the bottom of the trench 104 The layer 105 is wet-etched to leave an oxide layer 105a, and at the same time, the surface of the semiconductor substrate 10m at the bottom of the trench 104 is exposed;

0548-8874twf (Nl); 91110; Claire.ptd Page 7 578272 V. Description of the invention (4) Then, ammonium hydroxide (NH4 0H) is used as the etching solution, and the conductive layer 107a is used as a mask to face the trench. The semiconductor substrate 101 at the bottom surface of the trench 104 is wet-etched to form a bottle-shaped trench. The problem with the conventional process described above is that when the nitrided layer 110 is performed as shown in Figure 1f, the high temperature will cause the polycrystalline silicon layer or epitaxial layer that constitutes the conductive layer to be latticed to form voids. When ammonium hydroxide (NH4〇h) is used as the #etching solution to wet-etch the semiconductor substrate at the bottom of the groove 104, the surface is exposed to form a bottle-shaped groove 1 1 1. The gap 112 invades the semiconductor substrate 101 and generates a notch 112, which causes the quality of the semiconductor substrate 101 to decrease, as shown in FIG. 1j. SUMMARY OF THE INVENTION In view of this, an object of the present invention is to provide a method for manufacturing a pit-shaped trench on a semiconductor substrate. The method of oxidizing the conductive layer on the top of the trench can be used to protect the structure of the semiconductor substrate from forming a trench. Damage occurred during the groove. According to the above object, the present invention provides a two-step manufacturing method of a bottle-shaped trench: providing a semiconductor substrate having a wide β, # & layer on the semiconductor substrate, and a trench formed on the semiconductor substrate; A first lining layer, a second

Layer on :::? And a third liner 'the first liner and the second liner cover the sacrificial layer of a predetermined depth; using the sacrificial layer as a surname to perform an oxidation step on the surface conductive layer to form a chemical layer as a mask Curtain, sequentially remove the third liner that is not covered by the oxide layer

578272 Description of the invention (5) _ Bottom: The lining f and the first lining layer 1 are exposed at the bottom half of the trench and exposed with an oxide layer ..., the semiconductor substrate is shaped according to the above purpose, the Taiming Modi Hita # method includes the following Steps: mention; January =: The manufacturing sequence of the bottle-shaped groove is formed with-a cushion layer, a hard mask = body ί; chemical base = substrate, to the semiconductor substrate :: = ,; = layer ... ^ Layer; on the semiconductor substrate and the first; forming-the first-lining second lining layer and a conductive layer 1-a; sequential compliance formation-forming a third lining on the surface compliance; The surface sacrificial layer 'and the sacrificial layer fill the trench. On the bottom of the trench, a sacrificial sound of a predetermined depth is left; the curtain is removed, and the third liner that is not covered by the sacrificial layer is removed. Removed; the exposed surface of the stomach is guided; the third layer of the chemical layer is covered with the third conductive layer, the conductive layer, the first, and the second one, the semiconductor substrate at the bottom of the trench; Qin Yimu, the semiconductor substrate is engraved to form Bottle-shaped groove. According to the above purpose, the present invention further provides a method including the following steps: providing a manufacturing sequence of a semiconductor η groove, forming a first nitride layer, a top layer, and using a patterned photoresist layer as etching Mask $ 'sequentially etch the first nitride layer

578272 V. Description of the invention (6) Silicon glass layer and pattern semiconductor substrate are removed to form a photoresist layer; a first oxide layer should be formed in the trench; and a semiconducting substrate and surface exposed on the semi-semiconductor substrate Sequential trinitride layer; the photoresist layer fills the depth of the third photoresist cap with the third nitrogen removed; oxidizes the chemical layer covered with the second oxide layer, and exposes the exposed oxide layer as the cover groove. 0 Compliance is formed in the semiconductor base trench Groove; etching layer; photoresistive layer to expose the polycrystalline layer; layer as an etch mask; third nitride layer; located on the trench curtain; a groove is formed on the semiconductor; The layer's brother is a gasification layer, a polycrystalline fragment layer, and a photoresist layer, and the bottom surface photoresist layer is made of money to make the multi-screen, conforming to the conformal shape of the body substrate at the bottom of the polycrystal. The trench is engraved with a mask to remove the surface of the spar layer, and the crystalline silicon layer is formed in order to remove the bottom of the trench, leaving a second oxide layer on the photoresist layer that has not been covered by a predetermined photoresist layer; a silicon layer and a second semiconductor substrate Wet etched bottom not second The nitrided layer and the first oxygen surface; and the second to form a bottle-shaped trench cat to make the above and other objects, features, and advantages of the present invention clearer. ",,, a preferred embodiment is given below. With the accompanying drawings, the detailed description is as follows: Implementation method: Figures 2a-2i show the manufacturing bottle of the present invention. Please refer to the schematic diagram of the grooves of Figure 2a-2i. Please refer to Figure 2a, first L ^ Baixian provided a semiconductor substrate 201 on which the substrates were sequentially formed. «^« Formed with a cushion layer 202, a hard cover curtain layer 203, and a patterned light-emitting stem with openings ^ ^ ~ 1 and layer (not shown), with patterned photoresist layer as

Mask, etch hard Tan Mu layer? nQ Gengzao Boxing Layer 203 ′ to form an opening on the hard cover curtain 203

Page 10 578272

Then, the pad layer 202 and the semiconductor substrate 201 are etched to form a trench 204. The semiconductor substrate 2 01 is, for example, a silicon substrate; the material of the cushion layer 2 2 is, for example, a chemical layer, and the hard cover layer 2 3 is a material such as a borosilicate glass insulating layer or a f-nitride layer and a combination of silicon glass It can make the quality of the trench better, and the depth specific conditions are easier to control than the valley. · A thin oxide layer can be formed between the semiconductor substrate 201 and the pad layer 202, which can make the semiconductor substrate 201 and the pad layer Better adhesion between 002. Referring to FIG. 2B in May, a first liner layer is conformably formed on the surface of the semiconductor substrate 201 whose surface is exposed in the trench 204. The first liner layer is, for example, a semiconductor substrate at a temperature of 650 to 750 degrees Celsius. The oxide layer 205 undergoing thermal oxidation has a thickness of about 25 to 35 A; and a second liner layer is formed on the surface of the semiconductor substrate 201 and the oxide layer 205 to conform to the second liner layer. For example, the nitrided layer 206 formed at a temperature of 700 to 720 degrees Celsius has a thickness of about 45 to 55 A; then, at a temperature of 4 90 to 5100 degrees Celsius, the nitrided layer 206 is formed. A conductive layer 207 having a thickness of about 75 to 85 A is compliantly formed on the surface. The conductive layer 207 is, for example, a polycrystalline silicon layer or a staggered silicon layer. Among them, the materials of the first lining layer and the second lining layer must be different to facilitate the subsequent processes. Next, a characteristic step of the present invention is performed. Referring to FIG. 2c, a third liner is conformably formed on the surface of the conductive layer 207. The third liner is, for example, a nitrogen layer having a thickness of about 35 to 45 A at a temperature of 70 to 720 degrees Celsius.化 层 208. The layer 208. Then, a sacrificial layer (not shown) is formed on the nitride layer 208, and wet etching is performed using a mixed solution of sulfuric acid and hydrogen peroxide (SPM) as an etching solution.

0548-8874twf (Nl); 91110; Claire.ptd Page 11 578272 V. Description of the invention (8) part of the sacrificial layer to the sacrificial layer leaving the bottom of the trench 204, trench 204 = sacrificial layer of 邛For example, the photoresist layer 209, the thickness of the photoresist layer 209 can be determined according to requirements. The longer the wet etching time is, the thicker the photoresist layer 209 is, and the shorter the wet etching time is, the photoresist is. The thicker the thickness of the layer 209 is shown in Figure 2d. Among them, the photoresist layer 209 can also be spin-coated with a glass layer: instead. Refer to Figure 2e, and then use buffered hydrofluoric acid (BHF) as the etching solution and the photoresist layer 209 as the etching mask to remove the nitride layer 208 that is not covered by the photoresist layer 209. After the nitride layer 208 at the bottom of the trench 204 is left narrow, wet engraving is also performed using a mixed solution (sp M) of sulfuric acid and hydrogen peroxide as an etching solution, and the photoresist layer 009 is completely removed. Next, another characteristic step of the present invention is performed. Please refer to FIG. 2f. With the nitrided layer 208 & as a mask, the conductive layer 207 exposed at the surface is subjected to oxygen action at a temperature of 91 ° C, so that the conductive layer 207 forms a thickness of about 145 to 155. The human oxide layer is ^. Please refer to Fig. 2g, with the oxide layer 21 as the etching mask, at a temperature of 160 to 170 degrees Celsius, and using linoleic acid (H3p〇4) as the etch liquid, the nitrided layer 208a on the exposed surface A wet engraving is performed to completely remove the nitride layer 208a. Next, using the ammonium hydroxide (NH4OH) as an etching solution, the conductive layer 207 exposed on the surface is wet-etched 'to remove the conductive layer not covered by the oxide layer and leave the conductive layer 2G7a. Qian, using a bowl of acid (Η3Ρ04) as a post-etching solution at a temperature of 16 () to 17 () degrees Celsius, etched the exposed surface by nitriding to leave a nitrided layer 206a. …, Please refer to Figure 2h 'Using buffered hydrofluoric acid (F) as the etching solution and oxygen Page 12 0548-8874twf (Nl) ί 91110 »Claire.ptd 578272 5. Description of the invention (9) = layer is for the time left The mask, the exposed surface of the oxide layer 205 into the body beautiful bottom 2 (1 Hization layer 205 & 'At the same time, the semiconductor at the bottom of the trench 204 will be exposed if: MO because nitride formed under the oxide layer 210 The thickness of the layer 206a and the second layer 210 is thicker than the thickness of the oxide layer 205. Therefore, in the process of forming the layer 205, the oxidized layer 210 and the nitrided layer can guarantee the production of the trench 2 0 4 The side walls will not be damaged .: See, Figure 21 'Then, use ammonium hydroxide (NH4QH) as a finish. Second: The chemical layer 210 is used as a mask, and the semiconductor substrate 2G1 exposed at the bottom of the trench 204 is wet-etched. 'To form-bottle-shaped trenches. The method provided by Kai 4 ί Ϊ Γ' is mainly to allow the conductive layer to oxidize: tritium layer 'to completely prevent the polycrystalline stone layer or stupid stone that constitutes the conductive layer. Xi = Lattice in the environment 'so no etching solution will come through the gap :: ί the bottom will happen, maintaining the integrity of the semiconductor substrate, and then knowing: The reliability of the invention W. The invention has been disclosed above in a preferred embodiment, but it is not intended to invent: Any person skilled in the art can make changes and modifications without departing from the spirit of the invention ^. Retouching, so the scope of protection of the present invention shall be determined by the scope of the attached patent application.

578272 Brief description of the drawings Figures 1 a to 1 j are schematic diagrams showing the conventional manufacturing of bottle grooves. Figures 2a-2i are schematic views showing the manufacturing of a bottle groove according to the present invention. Explanation of symbols: 101, 201 ~ semiconductor substrate; 102, 20 2 ~ underlayer; 1 0 3, 2 0 3 ~ hard cover curtain layer; 104, 2 0 4 ~ groove; 105, 105a, 205, 205a ~ Oxidation layer; 106, 106a, 20 6, 20 6a ~ nitride layer; 107, 107a, 20 7, 20 7a ~ conductive layer; 108, 108a ~ oxide layer; 109, 209 ~ photoresist layer; 11 0 ~ nitride 111, 2 11 ~ bottle-shaped groove; 11 2 ~ notch; 208, 208a ~ nitride layer; 2 1 0 ~ oxide layer.

0548-8874twf (Nl); 91110; Claire.ptd page 14

Claims (1)

578272 VI. Scope of patent application1. A layer is provided, and the half of the first liner, a liner and the trench are sacrificed to the third liner, and the exposed layer is the third layer of the oxygen. The liner is exposed at the oxygen trench. 2. If applied, the hard layer. 3. Ruoshen, where the 4th Rushen, wherein the 5th Rushen bottle-shaped trench manufacturing method, includes the following steps: a semiconductor substrate having a hard cover conductor substrate formed on the semiconductor substrate A trench; a conductor substrate and a surface of the trench are sequentially compliantly formed with a second liner, a conductive layer, and a third liner, the second liner is different; the bottom of the trench is filled with a predetermined The sacrificial layer of depth; the animal layer is a mask of money, remove the one that is not covered by the sacrificial layer and remove the sacrificial layer; the conductive layer on the surface is subjected to an oxidation step to form an oxide layer as a mask of remaining etching, in order Removing the cover layer that is not the oxide layer, the conductive layer, the second liner layer, and the first liner layer, using the surface of the semiconductor substrate at the bottom of the trench; and a chemical layer as a mask, etching the semiconductor substrate to form a bottle The manufacturing method of the bottle-shaped groove described in item 1 of the patent scope is a silicon nitride layer or a silicon nitride / silicon glass combination " Manufacturing method: The thickness of the rough layer is 25 to 35 A. The manufacturing method of the bottle groove as described in the first item of the patent scope is that the second liner is an oxide layer. Method for manufacturing bottle groove according to item 1 of patent scope 0548-8874twf (Nl); 91110; Claire.ptd page 15 578272 6. Application for patent scope 'wherein the thickness of the second liner is 45 to 55A. 6. The bottle-shaped groove according to item 丨 of the patent application scope, wherein the second liner layer is a nitride layer. Manufacturing method 7 · The bottle-shaped groove according to item 1 of the scope of patent application, wherein the thickness of the conductive layer is 75 to 85A. The manufacturing method of I: Λ: ΐ ϊ The manufacturing method and bottle shape of the bottle-shaped groove described in item 1 of the patent scope, wherein the conductive layer is a polycrystalline silicon layer or an epitaxial silicon layer. W I Fabrication 9. The bottle-shaped groove sample as described in item 丨 of the patent application scope, wherein the thickness of the third liner is 35 to 45 people. 9, the manufacturer 10. If the scope of patent application is the first! In the above item, the third underlayer is a nitrided layer. The manufacturer of the trough U. As described in the bottle of the scope of the patent application: The sacrificial layer is the manufacturer of the photoresist layer or the spin-coating glass-breaking trough. Bottle type i wherein the thickness of the oxide layer is 145 to 155 in. The manufacturer of the groove 1 3. As described in item 1 of the scope of the patent application, where the method of engraving is the manufacture of f groove, where the etching solution is the manufacturer of the bottle groove described in Hydrochloric Acid 15 — A method for manufacturing a ampule-type trench, providing a semiconductor substrate, the semiconductor including the following steps: 7 a hard mask curtain layer and a patterned photoresist layer are sequentially formed with a hard mask curtain layer and the semiconductor etch mask Screen, sequentially etch the pad body substrate 'to form a law method law method law method law 0548-8874twf (Nl); 91110; Claire.ptd page 16' remove the layer not sacrificed Cover the surface of the layer; perform an oxidation step to form an oxide 578272 6. Apply for a patent range groove and remove the patterned photoresist layer; The semiconductor-based liner layer exposed at the trench; The above-mentioned response is formed-at . The surface of the semiconductor substrate and the first lining layer is formed into a second lining layer and a guide in accordance with the order; the conductive shield and the second lining layer are compliantly formed on the surface of the conductive layer. A third contrasting sound; compliantly formed on the surface of the semiconductor substrate-a drawer layer fills the trench; ^ sacrifice layer 'and the sacrificial layer is left at the bottom of the trench; you read / The price is far from the next predetermined depth. The sacrificial layer is used as the third lining of the etching mask to expose a part of the conductive layer and the sacrificial layer is removed. The conductive layer layer on the exposed surface is used. ▲ The oxide layer is used as the etching layer. The mask sequentially removes the second underlayer, the conductive layer, the second underlayer, and the first underlayer that are not covered by the oxide layer, exposing the surface of the semiconductor substrate at the bottom of the trench; and The oxide layer is a mask, and the semiconductor substrate is etched to form a bottle trench. [16] The method for manufacturing a bottle groove according to item 15 of the scope of the patent application ', wherein the hard mask layer is a silicon nitride layer or a silicon nitride / borosilicate glass layer. • 第 • shaped sacrifice the cover with type 578272 VI. _Please patent scope 17, such as the manufacturing method of the bottle-shaped groove described in item 15 of the patent scope of Shenqing, in which the thickness of the first liner is 25 奚 35A. 18. · The method for manufacturing a bottle-shaped groove as described in item 5 of the patent application, wherein the first lining layer is an oxide layer. 19. The method for manufacturing a bottle groove according to item 5 of the patent application scope, wherein the thickness of the second liner is 45 to 55A. 20, • The method for manufacturing a bottle-shaped groove as described in item 15 of the scope of patent application, wherein the second liner is a nitrided layer. 21. The method for manufacturing a bottle-shaped groove as described in item 15 of the scope of patent application, wherein the thickness of the conductive layer is 75 to 85 A. 22. The method for manufacturing a bottle-shaped groove as described in item 15 of the scope of patent application, wherein the conductive layer is a polycrystalline silicon layer or an epitaxial silicon layer < 23 • The bottle-type as described in item 15 of the scope of patent application The trench manufacturing method, wherein the thickness of the third liner is 35 to 45 A. 24. The method for manufacturing a bottle groove according to item 15 of the scope of the patent application, wherein the third liner is a nitrided layer. 25. The method for manufacturing a bottle groove as described in item 15 of the scope of patent application, wherein the sacrificial layer is a photoresist layer or a spin-on glass layer. 26. The method for manufacturing a bottle-shaped groove according to item 15 of the scope of patent application, wherein the thickness of the oxide layer is 145 to 155A. Method 27. The method for manufacturing a bottle-shaped groove as described in item 15 of the scope of patent application, wherein the remaining method is wet etching with an etching solution. Method 28. The manufacturer of the bottle-shaped groove as described in the scope of patent application No. 27, wherein the coin solution is ammonium hydroxide. ^ 78272 VI. Patent application scope 槎 For seeding ^ Bottle-shaped trench manufacturing method 'includes the following steps: nitriding>, a substrate on which a rotten stone glass field layer and a patterned photoresist layer are sequentially formed on the semiconductor substrate Layer, the two-two-two = photoresist layer is a mask with an engraving, and the first and last names are engraved; Cheng Ergou = and the semiconductor substrate to remove the patterned photoresist layer on the semiconductor;-an oxide layer The exposed surface of the semiconductor substrate is conformally shaped on the surface of the semiconductor substrate to form a second nitrided layer. The first rolled layer is sequentially formed on this layer, a polycrystalline silicon layer, and a third nitrided layer. The photoresist layer is formed on the surface ^-a photoresist layer, a resist layer; "The photoresist layer 'remains at the bottom of the trench-a predetermined depth = nitrogen etch mask' and is not covered by the photoresist layer [7 A part of the surface of the ... layer is exposed, and the light is used to roll the polycrystalline layer so that the polycrystalline silicon layer forms a jth second oxide layer which is covered by the second oxide layer. Acoustic and acoustic sound ^ w first lice formation layer, the polycrystalline silicon layer lice formation layer and the first oxide layer , The surface of the conductor substrate; and the first oxide layer at the bottom of the 4 trench X4 is a mask, which forms a bottle-shaped trench. The bottom of the bottle is placed on a first nitride substrate to form a first compliance and Delamination of the resist layer of the luminosity light cover; 578272 6. Scope of patent application 30. The method for manufacturing a bottle groove according to item 29 of the scope of patent application, wherein the thickness of the first oxide layer is 25 to 35A. 3 1. The method for manufacturing a bottle-shaped groove according to item 29 of the scope of patent application, wherein the thickness of the second nitride layer is 45 to 55A. 3 2. The method for manufacturing a bottle-shaped groove according to item 29 of the scope of patent application, wherein the thickness of the conductive layer is 75 to 85A. 3 3. The method for manufacturing a bottle groove according to item 29 of the scope of patent application, wherein the thickness of the third liner is 35 to 45A. 34. The method for manufacturing a bottle-shaped groove according to item 29 of the application, wherein the third liner is a nitrided layer. 3 5. The method for manufacturing a bottle-shaped groove according to item 29 of the patent application, wherein the thickness of the oxide layer is 145 to 155A. 3 6. The method for manufacturing a bottle groove according to item 29 of the scope of the patent application, wherein the etching solution is ammonium hydroxide. 0548-8874twf (Nl); 91110; Clairc.ptd page 20