TW574768B - Planar antenna utilizing two-layered broadside-coupled microstrips - Google Patents

Planar antenna utilizing two-layered broadside-coupled microstrips Download PDF

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TW574768B
TW574768B TW92101922A TW92101922A TW574768B TW 574768 B TW574768 B TW 574768B TW 92101922 A TW92101922 A TW 92101922A TW 92101922 A TW92101922 A TW 92101922A TW 574768 B TW574768 B TW 574768B
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layer
microstrip line
wide
side coupled
coupled microstrip
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TW92101922A
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Chinese (zh)
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TW200414606A (en
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Ching-Kuang C Tzuang
Kuo-Feng Huang
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Univ Nat Chiao Tung
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574768 五、發明說明(1) 一、 【發明所屬之技術領域】 本發明係關於一種應用雙層寬邊 立之平面式天、線,特別是關於線構造所建 益、構型精簡、且製程簡單之平面式以耗、高天線增 二、 【先前技術】 近年來,由於常用的反射面天線外觀 大’使其漸漸不適用在精緻、輕便之高 因此,應用傳輸線高階洩漏波(higher-order leaky wave)特性的平面式天線也就應運而生。然而,與傳Υ統天 線相=較,應用傳輸線高階洩漏波特性的平面式天線在天 線增益或是指向性方面的表現都較為遜色。 過去十年當中,針對提升平面式洩漏波天線之天線增 益的對策,被廣泛地研究並提出。圖1係顯示一種習知的 平面式泡漏波天線1 〇之立體示意圖。參照圖1,習知的平 面式)¾漏波天線1 0主要包括一介電材料帶線 ll(dielectric strip),安置於一鐵弗龍薄片(Tefl〇n sheet) 1 2上。籍此組態,介電材料帶線丨丨受到排列於周圍 的複數個金屬貼片1 3(me tal patch)電磁干擾而發/生傳播 能量的微弱衰減,因而實現出高增益的平面式洩漏波天線 10。 圖2係顯示另一種習知的平面式洩漏波天線2 〇之立體 示意圖,揭露於美國專利第4, 46 3, 3 30號中。參照圖2,習 知的平面式洩漏波天線2 0主要包括一矩形介質帶線22,作574768 V. Description of the invention (1) 1. [Technical field to which the invention belongs] The present invention relates to a plane-type sky and line using a double-layer wide-side stand, and particularly to the benefits, simplified configuration, and manufacturing process of the line structure. The simple planar type consumes more power and increases the number of antennas. [Previous technology] In recent years, due to the large appearance of commonly used reflective antennas, it has gradually become unsuitable for high precision and light weight. Therefore, higher-order leakage waves of transmission lines are used. Leaky wave) planar antennas have emerged as the times require. However, compared with conventional antennas, planar antennas that use the higher-order leakage wave characteristics of transmission lines perform worse in antenna gain or directivity. In the past decade, countermeasures to improve the antenna gain of planar leaky wave antennas have been widely studied and proposed. Fig. 1 is a schematic perspective view showing a conventional planar bubble leak wave antenna 10; Referring to FIG. 1, the conventional planar antenna) ¾ leaky wave antenna 10 mainly includes a dielectric strip 11 (dielectric strip) and is disposed on a Teflon sheet 12. With this configuration, the dielectric material strip line 丨 丨 weakly attenuates / produces the propagation energy due to the electromagnetic interference of a plurality of metal patches 1 3 (me tal patch) arranged around it, thereby realizing a high-gain planar leakage Wave antenna 10. Fig. 2 is a schematic perspective view showing another conventional planar leak wave antenna 20, which is disclosed in U.S. Patent No. 4,46 3,3 30. Referring to FIG. 2, the conventional planar leaky wave antenna 20 mainly includes a rectangular dielectric strip line 22.

第6頁 574768 五、發明說明(2) 為無輻射介電材料導管(non-radiative dielectric gu i de)_。矩形介質帶線2 2藉著其上週期性排列的蝕刻溝槽 (未圖,示)而產生非常低衰減率之洩漏波。該洩漏波通過矩 ^^▲V21(rectangular waveguide)傳播後,經由一組溝 槽天線陣列(slot antenna array)24輻射,並形成非常高 增益之輻射塲型。 至於天 動元件。舉 與天線結合 提高。此外 combining) 才能提昇效 式洩漏波天 易與主動元 2 〇需要籍由 路整合在一 但製程複雜 法達到真正 線之實際 例而言, 時,可減 ,在毫米 之應用上 率且節省 線10與20 件整合。 額外的介 起。因此 ,調整不 緊密佈局 應用方 當接收 少傳.輸 波的空 ,亦需 空間。 皆非平 結果, 面電路 ,習知 易進行 ,節省 面,典型 電路前端 4貝失’而 間功率合 要將主動 然而,因 面式印刷 習知的平 才可與積 的平面式 ’亦不適 空間之目 工 之低雜訊放大器直接 使整個系統的靈敏度 成(spat i a 1 power 訊说源與天線結合, 為前述之習知的平面 電路板結構,所以不 面式洩漏波天線1 0與 體發射電路或接收電 洩漏波天線10與20不 合大量生產,同時無 的。Page 6 574768 V. Description of the invention (2) It is a non-radiative dielectric material guide (non-radiative dielectric guide). The rectangular dielectric strip line 22 generates a leakage wave with a very low attenuation rate by the etched trenches (not shown, shown) periodically arranged thereon. After the leakage wave propagates through the rectangular waveguide V21 (rectangular waveguide), it radiates through a set of slot antenna array 24, and forms a radiation chirp with a very high gain. As for antennas. Lift in combination with the antenna. In addition, combining) can improve the efficiency of leakage. Botianyi and Active Unit 2 〇 need to integrate by road in a complex process to achieve the real line, for example, when it can be reduced, the rate of application in millimeters and save the line 10 and 20 pieces integrated. Extra introduction. Therefore, if the adjustment is not tightly arranged, the application side also needs space when receiving less transmission. None of the results are flat. The surface circuit is easy to learn and saves the surface. The front end of a typical circuit loses 4 lbs., And the power is active at the same time. However, because the surface printing is familiar, the flat surface can be combined with the product's flat surface. The low-noise amplifier of the space project directly makes the sensitivity of the entire system (spat ia 1 power signal source and antenna combined, which is the conventional planar circuit board structure described above, so the non-planar leakage wave antenna 10 and the body Transmitting circuit or receiving electric leakage wave antennas 10 and 20 are not produced in large quantities, and there are none at the same time.

三、【發明内容】 有蓉於前述,本發明之_曰 寬邊輕合微帶線之平面式天線,藉種應用雙 耦合的效應,可有效降低能量衰減率。w、、之上下電 本發明之另—目的在於提供-種應用雙層寬邊麵合III. [Summary of the Invention] As mentioned above, the planar antenna of the broad-side light-strip microstrip line of the present invention can effectively reduce the energy attenuation rate by applying the double coupling effect. w 、, Power on and off The other purpose of the present invention is to provide a kind of double-layer wide-edge surface bonding.

574768574768

帶線之平面式天線 本發明之又一 帶線之平面式天線 電路相整合。 ,可達到高天線增 目的在於提供一種 ’可以輕易地與微 益。 應用雙層寬邊耦合微 波岫端(front-end) 帶複目的在於提供一種應用雙層寬邊麵合微 π線之千面式天線,構型精簡且製程簡單之需求。 、本發明的更一個目的在於提供一種平面式天線陣列, 由複數個應用雙層寬邊耦合微帶線之平面式天線平行排列 而成,可降低饋入電路的複雜度並減低傳同 現高指向性之筆狀波束(pencil — beam)。 耗门h貝 依據本發明之一態樣,提供一種應用雙層寬邊耦合微 π線之平面式天線,包含··一上層饋入電路與一下層饋入 電路彼此包性絕緣;以及一上層寬邊輪合微帶線與一下 層寬邊耦合微帶線,彼此電性絕緣且平行地延伸於一方向 上^該上層寬邊耦合微帶線係電連接於該上層饋入電路且 由4上層饋入電路所激發,而該下層寬邊耦合微帶線係電 連接於該下層饋入電路且由該下層饋入電路所激發。 在依據本發明之另一態樣中,提供一種平面式天線陣 列,包含··偶數個應用雙層寬邊耦合微帶線之平面式天 線二:乂 : f隔平行排列;Μ及-平行饋入電路,由複數個 ,率等分裔所組成,用以激發該偶數個應用雙層寬邊耦合 微帶線之平面式天、線。 在本發明中’所期望激發出的微帶線第一高階模是屬 於電流主現反對稱之傳播模態。具體言之 574768 五、發明說明(4) 微帶線中以延伸方向上之中心線為對稱軸的兩個對稱部分 上之電流彼此間具有1 8 0度的相位差。同樣地,下層寬邊 轉合微帶線中以延伸方向上之中心線為對稱軸的兩個對稱 4刀上之電流彼此間亦具有1 8 〇度的相位差。再者,上層 寬邊辆合微帶線中之每一部分上之電流與下層寬邊耦合微 帶線中垂直對應於該部分之部分上之電流彼此間具有稍微 大於1 8 0度的相位差,舉例而言為丨9 6度之相位差。亦且, 電流必須非平均地分配至上層饋入電路與下層饋入電路, =而使得饋入下層寬邊耦合微帶線之總能量大於饋入上層 寬邊耦合微帶線之總能量。 四、【實施方式】 4,下文中之說明與附圖將使本發明之前述與其他目的、 特徵、與優點更明顯。 鉍將/參照_圖示詳細說明依據本發明之較佳實施例。 ^3係顯示依據本發明之應用雙層寬邊耦合微帶線之 合料2線30之部份爆炸^。參照圖3,應用雙層寬邊耦 至3^Γ、、一之拉平面式天線3〇包括第一至第三介電材料板32:1 材料板'm、板31 ’用以接地且黏附於第一介電 1入電路35,开^ ,雙層饋入電路構造33更包括 入電路36,形成3於1三介電材料板323上、-上層饋 電路35、以及一、介電材料板3 23上且電連接於輸入 一下層饋入電路37,其一部分形成於第三介Planar antenna with line Another planar antenna with line is integrated with the circuit of the present invention. , Can achieve high antenna increase, the purpose is to provide a ’that can be easily and profitably. The application of a double-layer wide-side coupled microwave front-end band is to provide a thousand-plane antenna using a double-layer wide-side surface combined with a micro π line, which has a simple configuration and a simple manufacturing process. A further object of the present invention is to provide a planar antenna array, which is composed of a plurality of planar antennas using double-layer wide-side coupled microstrip lines arranged in parallel, which can reduce the complexity of the feeding circuit and reduce the transmission height. A pencil — beam of directivity. According to one aspect of the present invention, a gate antenna provides a planar antenna using a double-layer wide-side coupled micro π line, including an upper-layer feed circuit and a lower-layer feed circuit that are insulatively insulated from each other; and an upper layer. The wide-side wheeled microstrip line and the lower-layer wide-side coupled microstrip line are electrically insulated from each other and extend parallel to one side ^ The upper-layer wide-side coupled microstrip line is electrically connected to the upper-layer feed circuit and consists of 4 upper layers The lower-layer wide-side coupled microstrip line is electrically connected to the lower-layer feed circuit and is excited by the lower-layer feed circuit. In another aspect according to the present invention, a planar antenna array is provided, including an even number of planar antennas using a double-layer wide-side coupled microstrip line 2: 乂: f is arranged in parallel; M and-parallel feed The input circuit is composed of a plurality of descents, etc., and is used to excite the even number of planar antennas and wires using a double-layer wide-side coupled microstrip line. In the present invention, the first higher-order mode of the microstrip line that is expected to be excited is a propagation mode in which the current is antisymmetric. Specifically, 574768 V. Description of the invention (4) The currents on the two symmetrical parts of the microstrip line with the center line in the extending direction as the axis of symmetry have a phase difference of 180 degrees from each other. Similarly, the currents on the two symmetrical 4-knife blades with the center line in the extension direction as the axis of symmetry in the broad-side turned microstrip line in the lower layer also have a phase difference of 180 degrees from each other. Furthermore, the current on each part of the upper wide-side microstrip line and the current on the part corresponding to that part of the lower wide-side coupled microstrip line have a phase difference slightly greater than 180 degrees, For example, it is a phase difference of 96 degrees. Also, the current must be distributed non-equally to the upper-layer feed circuit and the lower-layer feed circuit, so that the total energy fed to the lower-side wide-side coupled microstrip line is greater than the total energy fed to the upper-side wide-side coupled microstrip line. 4. [Embodiment] 4. The following description and drawings will make the foregoing and other objects, features, and advantages of the present invention more apparent. Bismuth will / refer to the figure for a detailed description of a preferred embodiment according to the present invention. ^ 3 shows a partial explosion of the composite 2 wire 30 using a double-layer wide-edge coupled microstrip line according to the present invention ^. Referring to FIG. 3, a double-layer wide-side coupling to 3 ^ Γ, a first pull planar antenna 30 is included including first to third dielectric material plates 32: 1 material plate 'm, plate 31' for grounding and adhesion The first dielectric 1 input circuit 35 is opened, and the double-layer feed circuit structure 33 further includes the input circuit 36 to form 3 on the 1-dielectric material board 323, the upper-layer feed circuit 35, and a dielectric material. The board 3 23 is electrically connected to the input lower layer feed circuit 37, and a part of it is formed in the third medium

574768 五、發明說明(5) 電材料板3 23上且電連接於輸入電路35而其另一部分夾在 第二與第三介電材料板3 22與323間。雙層寬邊耦合微帶線 構造34包括一上層寬邊耦合微帶線341,形成於第三介電 材料板32 3上且電連接於上層饋入電路36,以及一下層寬 邊耦合微帶線342,夾在第二與第三介電材料板322與3 23 間且電連接於下層饋入電路37。上層寬邊耦合微帶線341 之寬度稍微大於下層寬邊耦合微帶線342之寬度。此外, 上層寬邊搞合微帶線341與下層寬邊搞合微帶線342彼此平 行且其於延伸方向上的中心線A與a ’彼此上下對齊。 圖4 ( a)係顯示圖3所示的應用雙層寬邊耦合微帶線之 平面式天線30中位於第三介電材料板323上的部分之頂視 圖二而圖4 ( b )係顯示圖3所示的應用雙層寬邊耦合微帶線 之平面式天線30中夾在第二介電材料板3 22與第三介電材 ^板32 3間的部分之頂視圖。在圖3與4(1})中,虛線係用以 才曰不圖4(a)所示的部分與圖4(a)所示的部分間在垂直方向 ,亦即圖4(a)所示的部分之投影痕跡。 = ^ 圖3中之輸人電路35包括一輸人金屬 ^^351」作為輸入端子且可用以相接微波前端電路、一入 /4阻杬轉換部3 5 2,用以達成阻抗匹配之一 屬線3 5 3,用以作為分工器且將電路輪一 > =與 數值。 私哈翰入組抗轉換為純實 繁一:Ϊ If圖4(,)戶斤*,圖3中之上‘饋入電路36包括 第一今屬、‘ 61、第-金屬線362、以及第三金屬線3 6 3。 弟-金屬線361係用以平均分配輸入功率至第二金屬線⑽574768 V. Description of the invention (5) The electric material plate 3 23 is electrically connected to the input circuit 35 and the other part is sandwiched between the second and third dielectric material plates 3 22 and 323. The double-layer wide-side coupled microstrip line structure 34 includes an upper-layer wide-side coupled microstrip line 341 formed on the third dielectric material plate 32 3 and electrically connected to the upper-layer feed circuit 36, and a lower-layer wide-side coupled microstrip The line 342 is sandwiched between the second and third dielectric material plates 322 and 3 23 and is electrically connected to the lower feed circuit 37. The width of the upper wide-side coupled microstrip line 341 is slightly larger than the width of the lower wide-side coupled microstrip line 342. In addition, the upper wide side engaging microstrip line 341 and the lower wide side engaging microstrip line 342 are parallel to each other and their center lines A and a 'in the extending direction are aligned with each other up and down. Fig. 4 (a) is a top view showing a portion of the planar antenna 30 using the double-layer wide-side coupling microstrip line shown in Fig. 3 located on the third dielectric material plate 323. Fig. 4 (b) is a view showing FIG. 3 is a top view of a portion of a planar antenna 30 using a double-layer wide-side coupled microstrip line sandwiched between a second dielectric material plate 32 and a third dielectric material plate 32 3. In FIGS. 3 and 4 (1)), the dotted line is used to indicate that the portion shown in FIG. 4 (a) and the portion shown in FIG. 4 (a) are perpendicular to each other, that is, shown in FIG. Projection trace of the part shown. = ^ The input circuit 35 in FIG. 3 includes an input metal ^^ 351 ″ as an input terminal and can be connected to a microwave front-end circuit and an input / 4 resistance conversion section 3 5 2 to achieve one of impedance matching. The belonging line 3 5 3 is used as a divider and turns the circuit round > = and the value. Private Hahan's entry impedance is transformed into pure and complex one: Ϊ If Figure 4 (,) households *, Figure 3 above the 'feed circuit 36 includes the first genus, '61, the first-metal line 362, and Third metal wire 3 6 3. Brother-metal wire 361 is used to evenly distribute the input power to the second metal wire.

第10頁 574768 五、發明說明(6) 與第二金屬線363。第三金屬線363之長度係設計成比第二 金屬線3 6 2之長度更長入/2或入/2之奇數倍,其中λ為電 流之波長’使得上層寬邊耦合微帶線3 41中以延伸方向上 之中心線Α為對稱轴的兩個對稱部分上之電流彼此間具有 1 8 0度的相位差。 再者’如圖4(a)與4(b)所示,圖3中之下層饋入電路 37包括第四金屬線371,具有形成於第三介電材料板323上 之上部分371A與夾在第二與第三介電材料板322與323間之 下部分371B、第五金屬線372、以及第六金屬線373。第四 金屬線371之上部分371A與下部分371B係經由穿過第三介 電材料板323的兩個導電插塞374而相互連接。第四金屬線 371係用=平均分配輸入功率至第五金屬線372與第六金屬 線3 73。第五金屬線3 72之長度係設計成比第六金屬線373 ^長度更長λ/2或又/2之奇數倍,其中人為電流之波長, 使得下層寬邊耦合微帶線342中以延伸方向上之中心線Α, 為對稱軸的兩個對稱部分上之電流彼此間具有丨8〇度的相 圖b係顯示圖3所示的應 非爆炸的剖面圖。從圖5可清楚看見穿過第三 ’ |電材料板3 2 3的導雷插宾q 7 4 # η、* n ^ 扪播塞3 74 乂互連接第四金屬線371之 上口P刀371A與下部分371B,如前所述。 微册2 ί ft發明中激發出電流呈現反對稱之傳播模態合 之m::皆模’必須藉由適當地調整上層饋入電路I 4 屬線36 1與下層饋入電路37之第四金屬線371之/Page 10 574768 V. Description of the invention (6) and the second metal wire 363. The length of the third metal line 363 is designed to be longer than the length of the second metal line 3 6 2 by an odd multiple of / 2 or / 2, where λ is the wavelength of the current, so that the upper-side broad-side coupled microstrip line 3 In 41, the currents on the two symmetrical parts with the center line A in the extending direction as the axis of symmetry have a phase difference of 180 degrees from each other. Furthermore, as shown in FIGS. 4 (a) and 4 (b), the lower-layer feed circuit 37 in FIG. 3 includes a fourth metal line 371 having an upper portion 371A and a clip formed on the third dielectric material plate 323. A portion 371B, a fifth metal line 372, and a sixth metal line 373 between the second and third dielectric material plates 322 and 323. The upper portion 371A and the lower portion 371B of the fourth metal line 371 are connected to each other via two conductive plugs 374 passing through the third dielectric material plate 323. The fourth metal line 371 is used to equally distribute the input power to the fifth metal line 372 and the sixth metal line 373. The length of the fifth metal line 3 72 is designed to be longer than the sixth metal line 373 ^ by an odd multiple of λ / 2 or / 2, in which the wavelength of the artificial current causes the lower-side wide-side coupling microstrip line 342 to The center line A in the extension direction is a phase diagram b where the currents on two symmetrical parts of the axis of symmetry have 80 degrees between each other, and b is a sectional view showing the non-explosive structure shown in FIG. 3. It can be clearly seen from FIG. 5 that the thunder-guiding plug q 7 4 # η, * n ^ passing through the third 'electrical material plate 3 2 3 is connected to the fourth metal wire 371 above the mouth P knife. 371A and the lower part 371B are as described above. Booklet 2 ί In the invention of the ft invention, the current propagates in the anti-symmetric propagation mode and the combination of m :: all modes must be adjusted by appropriately adjusting the upper feed circuit I 4, the line 36 1 and the lower feed circuit 37 Wire 371 of /

第11頁 574768 五、發明說明(7) 寸’使得電流能非平均地分配至上層饋入電路3 6與下層饋 入電路37’導致饋入下層寬邊耦合微帶線342之總能量大 於饋入上層寬邊耦合微帶線3 41之總能量。此調整亦必須 使上層寬邊耦合微帶線341中之每一部分上之電流與下層 I邊輕合微帶線3 4 2中垂直對應於該部分之部分上之電流 彼此間具有稍微大於180度的相位差,舉例而言為丨96度之 相位差。藉著此組態,可激發出所期望的微帶線第一高階 模。 為使本發明更容易被瞭解,下文以設計成可工作於 38· 5GHz的應用雙層寬邊耦合微帶線之平面式天線3〇作為 例子而詳細說明其中各組件之尺寸與材料。第一至第三介 電材料板321至3 23皆由介電常數3· 38的玻璃纖維材料所形 成且厚度皆為0· 2 mm。在輸入電路35中,輸入金屬線3 51 在X方向上之長度為1·15 mm且在Y方向上之長度為1.2 mm ’且其阻抗在所設計頻率3 8 · 5 GHz時為5 0 Ω。此外,入 /4阻抗轉換部352在X方向上之長度為115 mm且在γ方向上 之長度為3.6 mm。再者,輸出金屬線353在X方向上之長度 為2· 5 mm且在Y方向上之長度為2·5 mm。 在上層饋入電路36中,第——金屬線361在X方向上之長 度為2· 45 mm且在Y方向上之長度為〇· 9 _。此外,第二^ 屬線36 2之寬度為0. 2 mm且總長度為3· 05 mm,而第二金^ 線3 63之寬度為0 _ 2 mm且總長度為5. 75 mm。 “ 在下層饋入電路37中,第四金屬線371之上部分371八 在X方向上之長度為2 mm且在Y方向上之長度為〇 q • u mm 。兩Page 11 574768 V. Description of the invention (7) Inch 'allows the current to be unevenly distributed to the upper feed circuit 36 and the lower feed circuit 37' resulting in the total energy fed into the lower-side wide-side coupled microstrip line 342 being greater than the feed Enter the total energy of the upper broadside coupled microstrip line 3 41. This adjustment must also make the current on each part of the upper wide-side coupled microstrip line 341 and the light-strip microstrip line 3 4 2 on the lower I side have a current slightly larger than 180 degrees with each other. The phase difference is, for example, a phase difference of 96 degrees. With this configuration, the desired first-order mode of the microstrip line can be excited. In order to make the present invention easier to understand, the following uses a planar antenna 30 designed as a double-layer wide-side coupled microstrip line that can operate at 38.5 GHz as an example to describe the dimensions and materials of each component in detail. The first to third dielectric material plates 321 to 3 23 are all formed of a glass fiber material having a dielectric constant of 3.38 and each have a thickness of 0.2 mm. In the input circuit 35, the length of the input metal wire 3 51 in the X direction is 1.15 mm and the length in the Y direction is 1.2 mm ', and its impedance is 50 Ω at the designed frequency 3 8 · 5 GHz . In addition, the length of the in / 4 impedance conversion section 352 in the X direction is 115 mm and the length in the γ direction is 3.6 mm. The length of the output metal wire 353 in the X direction is 2.5 mm and the length in the Y direction is 2.5 mm. In the upper-layer feed-in circuit 36, the length of the first metal line 361 in the X direction is 2.45 mm and the length in the Y direction is 0.99 mm. In addition, the width of the second metal line 36 2 is 0.2 mm and the total length is 3.05 mm, and the width of the second metal line 3 63 is 0 _ 2 mm and the total length is 5. 75 mm. "In the lower-layer feed-in circuit 37, the length above the fourth metal line 371, 371.8, is 2 mm in the X direction and 0 q • u mm in the Y direction.

第12頁 574768 五、發明說明(8) 個導電插塞3 74皆為方形柱,其方形截面之各邊長為〇.25 mm,配置成每一導電插塞374與上部分37以連接處之中心 距離上部分3 71A之兩正交邊緣皆為〇· 275龍。第 37Γ之下部分371B«方向上之長度為2.〇5 -且U = 之長度為0.9 mm,配置成每一導電插塞374與下部分371β 連接,之中心距離下部分371B之兩正交邊緣皆為〇· 275 mm °第五金屬線37 2之寬度為〇· 2 mm且總長度為3. 5 mm。 第六金屬線3 73之寬度為〇· 2 mm且總長度為丨· i 。 上層寬邊耦合微帶線341在义方向上之12〇 mm且在γ方 向上之長度為2.2 mm。下層寬邊耦合微帶線342在X方向上 之長度為120 mm且在γ方向上之長度為19 mm。 在依據本發明之應用雙層寬邊耦合微帶線之平面式天 線30之製造方法中,第一至第三介電材料板321至323得由 相同或彼此互異的介電材料例如陶瓷或玻璃纖維所形成。 再者,接地金屬薄板31、雙層饋入電路構造33、與雙層寬 邊耦合微帶線構造34皆得藉由習知的照像印刷技術將金屬 材料’例如銅,精確地塗佈於對應的介電材料板上而形 成。此外,為了形成兩個導電插塞3 74,得首先藉由使用 精細鑽孔技術打開兩個方形通孔於第三介電材料板3 23 中,然後藉由使用電解電鍍方法將金屬材料,例如銅或 金,填滿此兩個方形通孔。據此,可完成依據本發明之應 用雙層寬邊耦合微帶線之平面式天線30之製造。 從圖3、4(a)、4(b)、與5清楚可見,依據本發明之應 用雙層見邊輕合微帶線之平面式天線3 0為全平面之結構,Page 12 574768 V. Description of the invention (8) The conductive plugs 3 74 are square posts, each side of the square cross section is 0.25 mm, and each conductive plug 374 is connected to the upper part 37 The distance from the center of the two orthogonal edges of the upper part 3 71A is 0.275 dragons. The length under the 37Γ part 371B in the direction is 2.05-and the length of U = is 0.9 mm. Each conductive plug 374 is connected to the lower part 371β, and the center is orthogonal to the two parts of the lower part 371B. The edges are all 0.275 mm ° the fifth metal wire 37 2 has a width of 0.2 mm and a total length of 3.5 mm. The sixth metal wire 3 73 has a width of 0.2 mm and a total length of 丨 · i. The upper wide-side coupled microstrip line 341 is 120 mm in the sense direction and 2.2 mm in the γ direction. The length of the lower wide-side coupled microstrip line 342 in the X direction is 120 mm and the length in the γ direction is 19 mm. In the manufacturing method of the planar antenna 30 using the double-layer wide-side coupled microstrip line according to the present invention, the first to third dielectric material plates 321 to 323 may be made of the same or mutually different dielectric materials such as ceramics or Formed by glass fibers. In addition, the ground metal sheet 31, the double-layer feed circuit structure 33, and the double-layer wide-side coupled microstrip line structure 34 must be accurately coated with a metal material such as copper by a conventional photo printing technique. The corresponding dielectric material is formed on a plate. In addition, in order to form two conductive plugs 3 74, two square through holes must first be opened in the third dielectric material plate 3 23 by using a fine drilling technique, and then a metal material such as Copper or gold to fill these two square through holes. According to this, the manufacture of the planar antenna 30 using the double-layer wide-side coupled microstrip line according to the present invention can be completed. It is clear from Figs. 3, 4 (a), 4 (b), and 5 that the planar antenna 30 of the application of the present invention with a double-layer light-strip microstrip line has a full-plane structure.

第13頁 574768 五、發明說明(9) 其中雙層饋入電路構造33與雙層寬邊耦合微 得在同一印刷電路製程下全部完成,所以非常 較於習知的技術,依據本發明之應用雙層寬邊耦人 = 之平面式天線30不但容易設計與製造,更因為製^ 化,使得其成本大大的降低。此外,此平面式結構也有利 於將應用雙層寬邊耦合微帶線之平面式天線3 〇盘 電路整合/並輕易設計出更實用之平面式天線陣列及別^ 圖6係顯示由複數個依據本發明之應用雙層寬邊輕合 微帶線之平面式天線平行排列而成之平面式天線陣列5 〇。 參知圖6 ’組抗為5 0 Ώ巧金屬線5 1之一端可輕易與微波前 端電路(未圖示)相整合,且其另一端則與一個第 '一級功率 等分器5 2相接。第一級功率等分器5 2連接於兩個第二級功 率等分器53。每一個第二級功率等分器53連接於兩個第三 級功率等分器54。每一個第三級功率等分器54連接於兩個 應用雙層寬邊耗合微帶線之平面式天線3 〇。因此,圖6所 示的平面式天線陣列50係由八個應用雙層寬邊耦合微帶線 之平面式天線3 0平行排列而成且相鄰兩個平面式天線3 〇間 之距離皆相同。 圖7係顯示圖6所示的第一級、第二級、或第三級功率 等分器52、53、或54。參照圖7,功率等分器52、53、或 54皆由一金屬線52 1、一 λ /4阻抗轉換器522、以及左右對 稱之金屬線5 23與5 24所構成。 圖8為圖7所示的平面式天線陣列5 0之輻射場型之測量 結果。在圖8中,橫座標代表方位角(azimuth)且縱座標代Page 13 574768 V. Description of the invention (9) The double-layer feed circuit structure 33 and the double-layer wide-side coupling are all completed in the same printed circuit process, so it is very much compared with the conventional technology and the application according to the present invention The planar antenna 30 with double-layer wide-side coupling is not only easy to design and manufacture, but also because of the manufacturing process, its cost is greatly reduced. In addition, this planar structure is also conducive to the integration of planar antennas using a double-layer wide-side coupled microstrip line 30 disk circuit and easily designing more practical planar antenna arrays and others ^ Figure 6 shows According to the present invention, a planar antenna array 50 in which planar antennas with double-layer wide-edge light-combined microstrip lines are arranged in parallel is used. Refer to Figure 6 'The impedance is 50. One end of the clever metal wire 51 can be easily integrated with the microwave front-end circuit (not shown), and the other end is connected with a first-stage power divider 5 2. . The first-stage power divider 52 is connected to two second-stage power dividers 53. Each second-stage power divider 53 is connected to two third-stage power dividers 54. Each third-stage power divider 54 is connected to two planar antennas 30 using a double-layer wide-edge dissipative microstrip line. Therefore, the planar antenna array 50 shown in FIG. 6 is composed of eight planar antennas 30 using double-layer wide-side coupled microstrip lines arranged in parallel, and the distance between two adjacent planar antennas 30 is the same. . FIG. 7 shows the first, second, or third stage power divider 52, 53, or 54 shown in FIG. Referring to FIG. 7, the power divider 52, 53, or 54 is composed of a metal wire 521, a λ / 4 impedance converter 522, and left and right symmetrical metal wires 5 23 and 5 24. Fig. 8 is a measurement result of the radiation pattern of the planar antenna array 50 shown in Fig. 7. In Fig. 8, the horizontal coordinate represents the azimuth and the vertical coordinate represents

第14頁 574768 五、發明說明(10) "— - 表仰角(elevation),以等高線方式繪製經由 輻射場強度。從圖8清楚可見,依據本發明之=所得之 陣列5 0達成高指向性之筆狀波束(如圖8之 式天線 示男:偏上部分所 雖然本發明業已藉由較佳實施例作為例示加 應了解者為··本發明不限於此被揭露的實施例。^ 5兒明’ 本發明意欲涵蓋對於熟習此項技藝之人士而言日反地’ 種修改與相似配置。因此,申請專利範圍之範圚:顯的各 廣的證釋,以包容所有此類修改與相似配置。舉^根,最 第 至弟二介電材料板321至323可採用不同的厚声與σ 質,或是使用更多的介電材料板,端視實際需要$ ^ = ,綜上所述,依據本發明之應用雙層寬邊耦合微ϋ丄 平面式天線具有下列優點: ()雙層饋入電路構造可以有效激發所欲使用之、;贫漏 模’同時避免掉所欲避免的其他微帶線之主模或是高階洩 漏模; (二)設計容易、製造簡單、體積縮小、且生產成本 低; (二)平面式結構有利於整合微波前端電路,並輕易設 计出更實用之天線陣列;以及 (四)平面式天線陣列可確實達成高增益之筆狀波束, 取代傳統碟型天線。Page 14 574768 V. Description of the invention (10) "--Elevation, draw the intensity of the radiation field in the form of contour. It is clear from FIG. 8 that according to the present invention, the obtained array 50 achieves a highly directional pencil beam (the antenna shown in FIG. 8 shows a male: upper part. Although the present invention has been exemplified by a preferred embodiment It should be understood by those who know that the present invention is not limited to the disclosed embodiments. ^ 5 Erming 'This invention is intended to cover modifications and similar configurations for those skilled in the art. Therefore, a patent is applied for The scope of the scope: Extensive interpretations of all kinds to accommodate all such modifications and similar configurations. For example, the first to second dielectric material plates 321 to 323 can use different thick sounds and σ qualities, or Is to use more dielectric material boards, depending on the actual needs of $ ^ =. In summary, the application of the double-layer wide-edge coupled micro-plane planar antenna according to the invention has the following advantages: () Double-layer feed circuit The structure can effectively stimulate the desired use; Lean leakage mode 'while avoiding the main mode or higher-order leakage mode of other microstrip lines that you want to avoid; (2) easy design, simple manufacturing, reduced size, and low production costs (2) Planar structure is favorable Microwave integrated front-end circuit, and easily design a more practical the antenna array; and (iv) planar array antenna can indeed achieve high gain of the pen-shaped beam, to replace the traditional dish.

第15頁 ^4768 圖式簡單說明 五、【圖示之簡單說明】 圖1係顯示一種習4 - 圖; 的平面式茂漏波天綠 圖2係顯示另一種習 《立體示意 意圖、平面式攻漏波天線之立體示 圖3係顯不依據本發明 平面式天線之部份爆炸圖;〜用雙層寬邊轉合微帶線之 圖4 (a)係顯示圖3所示的應 平面式天線中位於第三介:用又層寬邊耦合 ^ ^ . «3 ^ ^ y ”線中夾在第二介^又層寬邊轉合 部分之頂視圖; 與弟三介電材料板間的 係顯不圖3所示的應用雙 式天線之非爆炸的剖面圖; 邊耦合微帶線之平面 圖6係顯示由複數個依據本發 微帶=之平面式天線平行排列而又成月之之應用雙層寬邊辆合 圖7係顯示圖6所示的功率蓉八w。千面式天線陣列; 果。圖8為圖7所示的平面式天線;歹U及 牵田射場型之測量結 元件符號說明: .1^ 習知的平面式洩漏波天_ 11介電材料帶線 皮天線 12鐵氟龍薄片 574768 圖式簡單說明 13 金屬貼片 2 1 矩形波導 22 矩形介質帶線 24 蝕刻溝槽 30 應用雙層寬邊耦合微帶線之平面式天線 31 接地金屬薄板 321 第一介電材料板 322 第二介電材料板 323 第三介電材料板 33 雙層饋入電路構造 34 雙層寬邊耦合微帶線構造 341 上層寬邊耦合微帶線 342 下層寬邊耦合微帶線 35 輸入電路 351 輸入金屬線 352 λ /4阻抗轉換部 353 輸出金屬線 36 上層饋入電路 361 第一金屬線 362 第二金屬線 363 第三金屬線 37 下層饋入電路 371 第四金屬線 371 Α 第四金屬線之上部分Page 15 ^ 4768 Simple explanation of the diagram V. [Simplified description of the diagram] Figure 1 shows a kind of Xi 4-Figure; Plane-type Leaky Wave Sky Green Figure 2 shows another kind of practice A perspective view of the attack and leakage wave antenna 3 is a partial exploded view of the planar antenna according to the present invention; ~ FIG. 4 (a) shows the application plane shown in FIG. The third antenna is located in the third antenna: the top side of the second side is coupled with the wide side of the second layer ^ ^. «3 ^ ^ y" line; between the second side of the second side and the wide side; The non-explosive cross-sectional view of the dual-type antenna using the dual-type antenna shown in Figure 3 is shown. Figure 6 of the side-coupled microstrip line shows a series of parallel antennas based on the microstrip = Application of double-layer wide-edge vehicles Figure 7 shows the power Rongba w shown in Figure 6. Thousands-face antenna array; Results. Figure 8 shows the planar antenna shown in Figure 7; Explanation of symbols for measuring junction elements: .1 ^ conventional planar leak wave sky _ 11 dielectric material strip antenna 12 Teflon sheet 574768 Brief description of the formula 13 Metal patch 2 1 Rectangular waveguide 22 Rectangular dielectric strip line 24 Etched trench 30 Planar antenna using double-layer wide-side coupled microstrip line 31 Ground metal sheet 321 First dielectric material plate 322 Second dielectric Material plate 323 Third dielectric material plate 33 Double-layer feed circuit structure 34 Double-layer wide-side coupled microstrip line structure 341 Upper wide-side coupled microstrip line 342 Lower wide-side coupled microstrip line 35 Input circuit 351 Input metal line 352 λ / 4 impedance conversion section 353 output metal line 36 upper feed circuit 361 first metal line 362 second metal line 363 third metal line 37 lower feed circuit 371 fourth metal line 371 Α upper part of fourth metal line

574768 圖式簡單說明 371B 第四金屬線之下部分 372 第五金屬線 373 第六金屬線 374 導電插塞 50 平面式天線陣列 51 金屬線 52 第一級功率等分器 5 21 金屬線 522 λ/4阻抗轉換器 523 金屬線 524 金屬線 53 第二級功率等分器 54 第三級功率等分器574768 Brief description of the diagram 371B The portion below the fourth metal line 372 The fifth metal line 373 The sixth metal line 374 The conductive plug 50 The planar antenna array 51 The metal line 52 The first power divider 5 21 The metal line 522 λ / 4 impedance converter 523 metal wire 524 metal wire 53 second stage power divider 54 third stage power divider

第18頁Page 18

Claims (1)

574768 六、申請專利範圍 -- 1· 一種應用雙層寬邊耦合微帶線之平面式天線,包含: 一上層饋入電路與一下層饋入電路,彼此電性絕緣; 以及 一上層寬邊轉合微帶線與一下層寬邊耦合微帶線,彼 此電性絕緣且平行地延伸於同一方向上,該上層寬邊耦合 微帶線係電連接於該上層饋入電路且由該上層饋入電路所 激發’而該下層寬邊耦合微帶線係電連接於該下層饋入電 路且由該下層饋入電路所激發。 2 ·如申凊專利範圍第1項之應用雙層寬邊耦合微帶線之 面式天線,其中: 狀皆=::3:::=該下層寬邊耦合微帶線之形 帶線ίίϊ寬ί:合微帶線之寬度大於該下層寬邊輕合微 延伸ϊίίίΐ耦ΐ微帶線與該下層寬邊耦合微帶線之在 申方向上的中、線彼此上下對齊。 之應用雙層寬邊耦合微帶線之平 3·如申請專利範圍第1項 面式天線,更包含: 一第一介電材料板與— 且該第二介電材料板上形成 邊耦合微帶線; 第二介電材料板,彼此層疊, 有該下層饋入電路與該下層寬 一接地金屬薄板 用以接地且黏附於該第一介電材料574768 6. Scope of patent application-1. A planar antenna using a double-layer wide-side coupled microstrip line, including: an upper-layer feed circuit and a lower-layer feed circuit that are electrically insulated from each other; and an upper-layer wide-side turn The combined microstrip line and the lower-layer wide-side coupled microstrip line are electrically insulated from each other and extend in the same direction in parallel. The upper-layer wide-side coupled microstrip line is electrically connected to and fed from the upper-layer feed circuit. Excited by the circuit, and the lower-layer wide-side coupled microstrip line is electrically connected to the lower-layer feed circuit and is excited by the lower-layer feed circuit. 2 · The surface antenna using the double-layer wide-side coupled microstrip line as described in item 1 of the patent scope, where: == :: 3 ::: = The lower-layer wide-side coupled microstrip line stripline Width: The width of the combined microstrip line is greater than the width and light extension of the lower side of the lower layer. The center and line of the microstrip line and the lower side of the wide side coupled microstrip line in the Shen direction are aligned with each other. The application of the double-layer wide-side coupled microstrip line is flat. 3. If the patent application covers the first area antenna, it further includes: a first dielectric material plate and—and the second dielectric material plate forms an edge-coupled micro Strip line; second dielectric material plates stacked on each other, with the lower feed circuit and the lower wide ground metal sheet for grounding and adhesion to the first dielectric material 第19頁 574768 六、申請專利範圍 ♦ 板。 4. 如申請專利範圍第3項之應用雙層寬邊耦合微帶線之平 面式天線,其中: 該第一與該第二介電材料板係由玻璃纖維或陶鐵磁體 所形成。 5. 如申請專利範圍第1項之應用雙層寬邊耦合微帶線之平 面式天線,更包含: 一第三介電材料板,用以使該上層饋入電路與該下層 饋入電路彼此電性絕緣,同時使該上層寬邊耦合微帶線與 該下層寬邊耦合微帶線彼此電性絕緣。 6. 如申請專利範圍第5項之應用雙層寬邊耦合微帶線之平 面式天線,其中: 該第三介電材料板係由玻璃纖維或陶鐵磁體所形成。 7. 如申請專利範圍第5項之應用雙層寬邊耦合微帶線之平 面式天線,更包含: 一輸入電路,形成於該第三介電材料板上且連接於該 上層饋入電路。 8.如申請專利範圍第7項之應用雙層寬邊耦合微帶線之平 面式天線,其中該輸入電路包含:Page 19 574768 6. Scope of Patent Application ♦ Board. 4. The planar antenna using the double-layer wide-side coupled microstrip line as described in item 3 of the patent application scope, wherein: the first and the second dielectric material plates are formed of glass fiber or ceramic iron magnet. 5. If the planar antenna using the double-layer wide-side coupled microstrip line of item 1 of the patent application scope further includes: a third dielectric material board for connecting the upper-layer feed circuit and the lower-layer feed circuit to each other It is electrically insulated, and at the same time, the upper-layer wide-side coupled microstrip line and the lower-layer wide-side coupled microstrip line are electrically insulated from each other. 6. The planar antenna using the double-layer wide-side coupled microstrip line as described in item 5 of the patent application scope, wherein: the third dielectric material plate is formed of glass fiber or ceramic ferromagnet. 7. The planar antenna using the double-layer wide-side coupled microstrip line as claimed in item 5 of the patent application scope further includes: an input circuit formed on the third dielectric material board and connected to the upper-layer feed circuit. 8. The planar antenna using the double-layer wide-side coupled microstrip line as claimed in item 7 of the patent application scope, wherein the input circuit includes: 第20頁 574768 六、申請專利範圍 一輸入金屬線,作為輸入端子且可與一微波前端電路 相接, 一;I / 4阻抗轉換部,用以達成阻抗匹配之條件;以及 ——輸出金屬線,用以作為一分工器且將電路輸入組抗 轉換為純實數值。 9.如申請專利範圍第7項之應用雙層寬邊耦合微帶線之平 面式天線,其中該輸入電路係使用照像印刷技術由金、 銀、或銅所形成。 1 0.如申請專利範圍第1項之應用雙層寬邊耦合微帶線之 平面式天線,其中該上層饋入電路包含一第一金屬線、一 第二金屬線、以及一第三金屬線,該第一金屬線係用以平 均分配輸入功率至該第二金屬線與該第三金屬線,並且該 第三金屬線之長度係設計成比該第二金屬線之長度更長, 使得該上層寬邊耦合微帶線中以延伸方向上之冲心線為對 稱軸的兩個對稱部分上之電流彼此間具有1 8 0度的相位 差。 11.如申請專利範圍第1項之應用雙層寬邊耦合微帶線之 平面式天線,其中該下層饋入電路包含一第四金屬線、一 第五金屬線、以及一第六金屬線,該第四金屬線係用以平 均分配輸入功率至該第五金屬線與該第六金屬線,並且該 第五金屬線之長度係設計成比該第六金屬線之長度更長,Page 20 574768 VI. Patent application scope-an input metal wire as an input terminal and can be connected to a microwave front-end circuit,-an I / 4 impedance conversion unit to achieve the conditions of impedance matching; and-an output metal wire It is used as a divider and converts the input impedance of the circuit into pure real value. 9. The planar antenna using the double-layer wide-edge coupled microstrip line as claimed in item 7 of the patent application scope, wherein the input circuit is formed of gold, silver, or copper using photo printing technology. 10. The planar antenna using a double-layer wide-side coupled microstrip line as described in item 1 of the patent application scope, wherein the upper-layer feed circuit includes a first metal line, a second metal line, and a third metal line The first metal wire is used to evenly distribute the input power to the second metal wire and the third metal wire, and the length of the third metal wire is designed to be longer than the length of the second metal wire, so that the The currents on the two symmetrical parts of the upper broad-side coupled microstrip line with the center line in the extension direction as the axis of symmetry have a phase difference of 180 degrees from each other. 11. The planar antenna using a double-layer wide-side coupled microstrip line as claimed in item 1 of the patent application scope, wherein the lower-layer feed-in circuit includes a fourth metal line, a fifth metal line, and a sixth metal line, The fourth metal wire is used to evenly distribute the input power to the fifth metal wire and the sixth metal wire, and the length of the fifth metal wire is designed to be longer than the length of the sixth metal wire. 574768 六、申請專利範圍 使得該下層寬邊耦合微帶線中以延伸方向上之中心線為對 稱軸的兩個對稱部分上之電流彼此間具有1 8 0度的相位 差。 1 2.如申請專利範圍第1 0項之應用雙層寬邊耦合微帶線之 平面式天線,其中該第四金屬線包含一上部分與一下部 分,該上部分位於與該上層饋入電路相同之平面上而該下 部分位於與該下層饋入電路相同之平面上,且該上部分與 該下部分係經由兩個導電插塞而相互連接。 13. 如申請專利範圍第1項之應用雙層寬邊耦合微帶線之 平面式天線,其中該上層與該下層饋入電路以及該上層與 該下層寬邊耦合微帶線係使用照像印刷技術由金、銀、或 銅所形成。 14. 如申請專利範圍第1項之應用雙層寬邊耦合微帶線之 平面式天線,其中該上層饋入電路與該下層饋入電路係調 整成用以非平均地分配電流,導致饋入該下層寬邊耦合微 帶線之總能量大於饋入該上層寬邊耦合微帶線之總能量。 1 5.如申請專利範圍第1項之應用雙層寬邊耦合微帶線之 平面式天線,其中該上層饋入電路與該下層饋入電路係調 整成使該上層寬邊耦合微帶線中之每一部分上之電流與該 下層寬邊耦合微帶線中垂直對應於該部分之部分上之電流574768 6. The scope of patent application makes the currents on the two symmetrical parts of the lower wide-side coupled microstrip line with the center line in the extension direction as the symmetrical axis having a phase difference of 180 degrees from each other. 1 2. A planar antenna using a double-layer wide-side coupled microstrip line as claimed in item 10 of the patent application scope, wherein the fourth metal line includes an upper part and a lower part, and the upper part is located in the upper-layer feed circuit On the same plane and the lower part is located on the same plane as the lower feed circuit, and the upper part and the lower part are connected to each other via two conductive plugs. 13. For the planar antenna using the double-layer wide-edge coupled microstrip line as described in the first patent application range, the upper layer and the lower-layer feed-in circuit and the upper-layer and lower-layer wide-side coupled microstrip line are printed by photo printing. Technology is made of gold, silver, or copper. 14. For a planar antenna using a double-layer wide-side coupled microstrip line, such as in item 1 of the scope of patent application, the upper-layer feed circuit and the lower-layer feed circuit are adjusted to distribute current unevenly, resulting in feed The total energy of the lower wide-side coupled microstrip line is greater than the total energy fed into the upper wide-side coupled microstrip line. 1 5. The planar antenna using the double-layer wide-side coupled microstrip line according to item 1 of the patent application scope, wherein the upper-layer feed circuit and the lower-layer feed circuit are adjusted so that the upper-layer wide-side coupled microstrip line The current on each part is perpendicular to the current on the part of the underlying broad-side coupled microstrip that corresponds to that part 574768 六、申請專利範圍 彼此間具有稍微大於1 8 0度的相位差。 16. —種平面式天線陣列,包含: -偶數個如申請專利範圍第1項之應用雙層寬邊耦合微 帶線之平面式天線,以等間隔平行排列;以及 一平行饋入電路,由複數個功率等分器所組成,用以 激發該偶數個應用雙層寬邊耦合微帶線之平面式天線。574768 6. Scope of patent application There is a phase difference of slightly more than 180 degrees between each other. 16. —A planar antenna array comprising:-an even number of planar antennas using a double-layer wide-side coupled microstrip line as described in item 1 of the patent application, arranged in parallel at equal intervals; and a parallel feed circuit, A plurality of power equalizers are used to excite the even number of planar antennas using a double-layer wide-side coupled microstrip line. 1 7. 如申請專利範圍第1 6項之平面式天線陣列,其中組成 該平行饋入電路之該複數個功率等分器中之每一個係由 金、銀、或銅所形成。1 7. The planar antenna array according to item 16 of the patent application, wherein each of the plurality of power dividers constituting the parallel feed circuit is formed of gold, silver, or copper. 第23頁Page 23
TW92101922A 2003-01-28 2003-01-28 Planar antenna utilizing two-layered broadside-coupled microstrips TW574768B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8542075B2 (en) 2011-01-24 2013-09-24 National Taiwan University Structure and method for reducing EM radiation, and electric object and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8542075B2 (en) 2011-01-24 2013-09-24 National Taiwan University Structure and method for reducing EM radiation, and electric object and manufacturing method thereof
TWI415560B (en) * 2011-01-24 2013-11-11 Univ Nat Taiwan Structure and method for reducing em radiation, and electric object and manufacture method thereof

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