TW573370B - Tri-color ZnSe white LED - Google Patents

Tri-color ZnSe white LED Download PDF

Info

Publication number
TW573370B
TW573370B TW91118766A TW91118766A TW573370B TW 573370 B TW573370 B TW 573370B TW 91118766 A TW91118766 A TW 91118766A TW 91118766 A TW91118766 A TW 91118766A TW 573370 B TW573370 B TW 573370B
Authority
TW
Taiwan
Prior art keywords
znse
light
white
wavelength
color
Prior art date
Application number
TW91118766A
Other languages
Chinese (zh)
Inventor
Hsing Chen
Original Assignee
Solidlite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solidlite Corp filed Critical Solidlite Corp
Priority to TW91118766A priority Critical patent/TW573370B/en
Application granted granted Critical
Publication of TW573370B publication Critical patent/TW573370B/en

Links

Abstract

In the present manner for generating white light through the use of ZnSe substrate, blue color light emitting layer is grown on the yellow color ZnSe substrate. By using yellow blue complementary color to generate white light, because the generated white light lacks more in the part of green color wavelength, the generated white light color is prone to red color such that the real white light source can not be formed. The invented tri-color ZnSe white LED uses the conventional ZnSe white light LED chip as the light emitting source; and a layer of green-color fluorescent light body is coated on the LED, in which blue light emitted by ZnSe is used to excite the green-color fluorescent light body on its surface to generate green light for forming a tri-color white LED having distinct R, G, B colors.

Description

573370573370

發光二極體(Light Emitting Diode ,LED)的特點 ,壽命長、省電、反應速度快、可靠度高、環保、安全” 等’隨著技術的進步,LED的亮度已逐漸提升,而在白光 LED方面’目前被喻為2 1世紀新的主要照明光源,尤其近 年來行動電話與PDA (個人行動助理器)彩色化的趨^, 使得全世界各研究單位,都正積極地投入研究白光led 行列。 、 以往欲製作白光led,需利用兩個以上不同顏色發光 晶粒共同封裝在一起,封裝時須同時做固晶打線較為複 雜,且由於紅、藍、綠三個不同顏色的LED發光晶粒材料 不同’所需的驅動電壓(Vf )也不同,故在設計電路的時 候’須在每個LED晶粒上加不同的驅動電流調整亮度及顏 色為其缺點。 目前較先進的作法係以單顆LED晶粒來製作白光LED, 主要的製作方式有下列兩種方式,一種係以LED晶粒(如 GaN (氮化鎵)或SiC (碳化矽)等)於晶粒上添加螢光粉 產生混合波長方式製作白光LED ;另一種方式則不採用螢 光粉’係以晶粒直接產生白光如Znse,利用Znse藍色發光 層所發出之藍光,照射至Znse基板上產生黃色光,以黃、 藍互補方式產生白色光’為曰本住友電工首創之發明。 一般以ZnSe來製作的白光LED,其優點在於不必添加 螢光粉就可產生白光,沒有封裝時螢光粉沉澱或變質的問 題’但現今以ZnSe製作的白光LED,其發射光譜圖如第一 圖所示’由第一圖我們可以知道,目前ZnSe型白光LED缺The characteristics of Light Emitting Diode (LED), long life, power saving, fast response, high reliability, environmental protection, safety, etc. "With the advancement of technology, the brightness of LED has gradually increased, and in white light “LED” is currently regarded as the new main lighting source in the 21st century, especially the colorization of mobile phones and PDAs (Personal Mobile Assistants) in recent years. As a result, research units around the world are actively investing in white LEDs. Ranks. In the past, if you want to make white light LEDs, you need to use two or more different color light-emitting chips to package them together. It is more complicated to do solid-state bonding at the same time. Because of three different colors of red, blue, and green LED light-emitting crystals, Different granular materials require different driving voltages (Vf), so when designing a circuit, it is necessary to add different driving currents to each LED die to adjust the brightness and color as its disadvantages. At present, the more advanced method is to A single LED die is used to make white LEDs. The main manufacturing methods are the following two methods. One is to use LED die (such as GaN (gallium nitride) or SiC (silicon carbide), etc.) on the crystal. Adding fluorescent powder to the particles produces a mixed-wavelength method to produce white LEDs; the other method does not use fluorescent powder 'to directly generate white light such as Znse from the crystal grains, and uses the blue light emitted by the Znse blue light-emitting layer to irradiate the Znse substrate Generate yellow light and generate white light in a complementary way of yellow and blue. This is the first invention of Sumitomo Electric Industries. White LEDs generally made of ZnSe have the advantage that white light can be generated without the addition of fluorescent powder. The problem of powder precipitation or deterioration 'but the emission spectrum of white LEDs made with ZnSe is as shown in the first figure' From the first figure we can know that the current ZnSe type white LED lacks

573370 五、發明說明(2) - 乏綠色波長的光,使得整體LED的顏色偏紅,由於缺乏綠 光的白光LED也不能應用於液晶顯示器背光源或真正照明 用途上’疋現今Z n S e系白光L E D的一大缺點。 本發明人從事白光LED的研發已有多年的經驗,並已 取得國内外多項白光led專利,針對以上ZnSe型白光LED的 缺失作了更進一步的研究,提出一種新構想〜即「三波長 ZnSe白光LED」,係以現有的ZnSe型白光LED晶粒為基礎, 在ZnSe白光晶粒上使用一層綠色螢光粉,藉由ZnSe藍色發 光層所發出的藍光,激發本發明綠色螢光粉使其產生綠色 波長光’使付原本缺乏綠色波長的Z n S e型白光L £ d,達到 R、G、B全彩的效果,實現真正的白光LEI)。 本發明「三波長ZnSe白光LED」,所使用的綠色螢光 粉為: Y3 (GaxAlh ) 5〇12 : Ce ( 0<χ<1 ); 或Ca8Mg (Si04 ) 4C12 ·· Eu,Μη ; 或Ca2MgSi2 07 : Cl,Eu ; 或BaJMgxZivdS^O? ·· Eu ; 本發明「三波長ZnSe白光LED」,使用的ZnSe型白光 LED晶粒在藍色發光層部份可使用發光波長為420〜480nm 的藍光’照射到基板上產生黃色光波長峰值約為6 〇 〇nm左 右,在此傳統ZnSe型白光LED上加入本發明三種綠色螢光 粉中任意一種或一種以上混合之螢光粉後,可產生真正三 波長的白光LED,可應用於行動電話、PDA等彩色液晶顯示 器背光源,使液晶顯示器呈現較真實的色彩,此外亦可當573370 V. Description of the invention (2)-The lack of green wavelength light makes the overall LED color reddish. Due to the lack of green light, white LEDs cannot be used for LCD backlights or real lighting purposes. One of the major disadvantages of white LEDs. The inventors have many years of experience in the research and development of white LEDs, and have obtained a number of white LED patents at home and abroad. They have made further research on the lack of the above ZnSe type white LEDs, and proposed a new idea ~ "Three-wavelength ZnSe white "LED" is based on the existing ZnSe-type white LED crystal grains. A layer of green phosphor is used on the ZnSe white light crystal grains. The blue light emitted by the ZnSe blue light-emitting layer excites the green phosphor of the present invention to make it Generate green wavelength light ', so that the Z n S e type white light L £ d, which originally lacked a green wavelength, achieves the full-color effect of R, G, and B, and realizes true white light LEI). In the "three-wavelength ZnSe white light LED" of the present invention, the green phosphor used is: Y3 (GaxAlh) 502: Ce (0 < χ <1); or Ca8Mg (Si04) 4C12 ·· Eu, Mη; or Ca2MgSi2 07: Cl, Eu; or BaJMgxZivdS ^ O? · Eu; In the "three-wavelength ZnSe white light LED" of the present invention, the ZnSe-type white LED grain used in the blue light-emitting layer part can use blue light with a wavelength of 420 to 480 nm 'The peak wavelength of the yellow light generated by irradiation on the substrate is about 600 nm. After adding any one or more mixed phosphors of the three kinds of green phosphors of the present invention to this traditional ZnSe-type white LED, a true phosphor can be produced. Three-wavelength white LEDs can be used as backlight sources for color liquid crystal displays such as mobile phones and PDAs, so that the liquid crystal display can show more realistic colors.

573370 五、發明說明(3) 作真正白光的照明光源。 綜合以上所述,本發明「三波長ZnSe白光LED」,提 出了創新的三波長的製作方式,使ZnSe型的白光LED應用 的範圍變的更加廣泛,本發明的製作方式也為ZnSe型的白 光LED提供了另一個更佳選擇。573370 V. Description of the invention (3) As a real white light source. To sum up, the "three-wavelength ZnSe white LED" of the present invention proposes an innovative three-wavelength manufacturing method, which makes the application range of ZnSe-type white light LEDs wider. The manufacturing method of the present invention is also ZnSe-type white light LEDs provide another better option.

第6頁 573370 圖式簡單說明 茲例舉本案創作之實施例配合圖示說明如下: 第一圖為傳統ZnSe型白光LED發射光譜圖。 第一圖為傳統ZnSe型白光LED燈型(Lamp)型示音圖。 第二圖為本發明「三波長ZnSe白光LED」燈型(Lamp)白 光LED示意圖。 第四圖為本發明「三波長以“白光LED」正面發光型白光 LED示意圖。 第五圖為本發明「三波長以仏白光LED」模鑄法表面黏著 (SMD )型白光LED示意圖。 第六圖為本發明「三波長ZnSe白光LED」印刷電路板 (PCB )型白光led示意圖。 第七圖為本發明「三波長ZnSe白光LED」中綠色螢光粉 Y3 ( GaxA l1-x ) 5〇l2 : Ce ( 0<χ<1 )激發光譜圖。 第八圖為本發明「三波長ZnSe白光LED」中綠色螢光粉 Y、3 (GaxA1i-x ) 5〇i2 : Ce ( 0<χ<1 )發射光譜圖。 第九圖為本發明「三波長ZnSe白光LED」中綠色螢光粉 Ca8Mg (Si〇4 ) 4cl2 ·· Eu,Mn 激發光譜圖。 第十圖為本發明「三波長ZnSe白光LED」中綠色螢光粉 Ca8Mg (Si〇4 ) 4Cl2 : Eu,Mn 發射光譜圖。 第十一圖為本發明「三波長ZnSe白光LED」ZnSe白光晶粒 加綠色螢光粉發射光譜圖。 圖號說明: 1、ZnSe藍色發光層Page 6 573370 Brief description of the drawings The examples created in this case are illustrated with the illustrations as follows: The first figure is the emission spectrum of a traditional ZnSe white LED. The first picture is a traditional ZnSe-type white LED lamp type (Lamp) sound diagram. The second figure is a schematic diagram of a “three-wavelength ZnSe white LED” lamp type white LED according to the present invention. The fourth figure is a schematic diagram of a "three-wavelength" white light LED "front-emitting white light LED according to the present invention. The fifth figure is a schematic diagram of the surface-adhesive (SMD) white LED of the "three-wavelength white LED" die-casting method of the present invention. The sixth figure is a schematic diagram of a "three-wavelength ZnSe white LED" printed circuit board (PCB) type white light LED according to the present invention. The seventh figure is an excitation spectrum of the green phosphor Y3 (GaxA l1-x) 502: Ce (0 < χ < 1) in the "three-wavelength ZnSe white LED" of the present invention. The eighth figure is an emission spectrum chart of green phosphor Y, 3 (GaxA1i-x) 50i2: Ce (0 < χ < 1) in the "three-wavelength ZnSe white LED" of the present invention. The ninth figure is an excitation spectrum of the green phosphor Ca8Mg (Si〇4) 4cl2 ···, Mn in the "three-wavelength ZnSe white LED" of the present invention. The tenth figure is an emission spectrum chart of green phosphor Ca8Mg (Si〇4) 4Cl2: Eu, Mn in the "three-wavelength ZnSe white LED" of the present invention. The eleventh figure is an emission spectrum chart of ZnSe white light crystal grains and green phosphor powder of the "three-wavelength ZnSe white LED" of the present invention. Drawing number description: 1. ZnSe blue light-emitting layer

573370 圖式簡單說明 2、 ZnSe基板 3、 導線 4、 燈型支架 5、 封裝膠體 6、 晶粒電極 7、 綠色螢光粉 8、 正面發光型封裝體 9、 正面發光型内部電極 1 0、正面發光型外部電極 11、 金屬支架 12、 印刷電路板 1 3、印刷電路板電極 實施例一: 敬请參閱第三圖白光LED燈型示意圖,首先選取一傳 統ZnSe白光LED晶粒,晶粒結構主要分為ZnSe藍色發光層i 及ZnSe基板2,其中ZnSe藍色發光層!的發光波長介於42() 〜4 8Onm之間,將此znSe白光LED晶粒,經由固晶打線等程 序固定且導通於燈型(Lamp )支架4凹槽内,接著於凹槽 内ZnSe晶粒之上,將本發明γ3 ((^Α1ΐχ)5〇ΐ2 ··& (ouq )綠色螢光粉7以點膠或塗佈等方式,直接或間接的均勻 地塗覆於ZnSe白光LED晶粒上,再以封裝膠體5封裝成燈型 (Lamp ) LED 即完成,本發明\ (G〜A1h ) : “ (0<χ<1 )綠色螢光粉7在以以藍色發光層i所發出藍光的573370 Brief description of the drawing 2. ZnSe substrate 3, lead wire 4, lamp holder 5, encapsulant 6, die electrode 7, green phosphor 8, front light-emitting package 9, front light-emitting internal electrode 1 0, front Light-emitting external electrode 11, metal support 12, printed circuit board 1 3. Printed circuit board electrode Example 1: Please refer to the third schematic diagram of the white LED lamp type, first select a traditional ZnSe white LED chip, the grain structure is mainly Divided into ZnSe blue light-emitting layer i and ZnSe substrate 2, of which ZnSe blue light-emitting layer! The light emitting wavelength is between 42 () ~ 48nm. This znSe white LED chip is fixed and passed through a process such as solid-state wire bonding and is conducted in the groove of the lamp bracket 4 and then in the groove of the ZnSe crystal. On the grains, the γ3 ((^ Α1ΐχ) 5〇ΐ2 · & (ouq) green fluorescent powder 7 of the present invention is directly or indirectly uniformly coated on the ZnSe white LED crystal by means of dispensing or coating, etc. On the chip, the encapsulation gel 5 is used to complete the lamp LED. The present invention (G ~ A1h): "(0 < χ < 1) green fluorescent powder 7 Blue-emitting

第 573370 圖式簡單說明 2:::產生發射光譜波峰在500〜55°nm間的綠色光如第 :綠色波長恰巧是傳統驗白綱所缺乏的 螢光於ί Γ所不,故以傳統ZnSe白光LED晶粒加上綠色 ^先如成為三波長的ZnSe白光LED,其光譜圖如第十二圖 产/p不。 在實施例一中除了可封裝成燈型led外,亦可 光/Γ ’如第四圖所示;或可封裝成模鑄法通型 封裝成Pfi 所严;或可以印刷電路板(PCB)為基板 不ιί型態。 如弟六圖所示,依個人需要可封裝成各種 本發明所使用的綠色螢光粉除了實施例一中h (Ga Alh )5〇12 : Ce (0<X<1 )外,尚有Ca8Mg (Si〇4 \c3 xFigure 573370 is a simple illustration of 2 ::: Generates green light with an emission spectrum peak between 500 and 55 ° nm. The green wavelength is exactly the fluorescence that is lacking in traditional white checkers, so traditional ZnSe is used. The white light LED chip plus green ^ first becomes a three-wavelength ZnSe white light LED, and its spectrum is as shown in the twelfth figure / p. In the first embodiment, in addition to being packaged as a lamp-type LED, it can also be light / Γ 'as shown in the fourth figure; or it can be packaged as a mold-type package and packaged as Pfi; or it can be a printed circuit board (PCB) Not for the substrate. As shown in Figure 6, according to personal needs, it can be packaged into various green phosphors used in the present invention. In addition to h (Ga Alh) 5012: Ce (0 < X < 1) in Example 1, Ca8Mg (Si〇4 \ c3 x

Eu,Mn綠色螢光粉,其激發光譜與發射光譜如第九圖、 十圖所示·發光波修約在5 1 5nm左右,其餘兩種綠色普 粉Ca2MgSl2〇7 :C1,Eu 或Ba2(MgxZnh)Si2〇7 :Eu ;皆可被 光激發產生綠色波長光。 β 本赉月中所用之綠色螢光粉為本發明人首創, 明人經由多年研究之成《,其特徵為此螢光粉能接受藍上 激發:產生綠色波長光’且螢光粉的成份均為氧化 穩定壽命也較長,以本發明的螢光粉搭配傳統以仏白…、 LED晶粒,可彌補傳統ZnSe白光LED缺乏綠色波長光之缺 點,達成三波長的白光LED,不但有較佳的色彩,亦直 正實用於彩色液晶顯示器之上,具R、G、B三波長的白 LED可能成為未來白光的主流產品。 元 573370 圖式簡單說明The excitation and emission spectra of Eu and Mn green phosphors are shown in the ninth and tenth graphs. The emission wave is about 5 1 5 nm, and the other two green ordinary powders Ca2MgSl207: C1, Eu or Ba2 ( MgxZnh) Si207: Eu; can be excited by light to generate green wavelength light. β The green phosphor used in this month was pioneered by the inventor, and it has been researched for many years by Mingren. It is characterized by the fact that the phosphor can accept blue excitation: it produces green wavelength light and the composition of the phosphor Both of them have long oxidation stability and long life. Using the phosphor of the present invention with the traditional white…, LED grains can make up for the shortcomings of traditional ZnSe white LEDs that lack green light, and achieve three-wavelength white LEDs. The good color is also directly applied to the color liquid crystal display. White LEDs with three wavelengths of R, G, and B may become the mainstream products of white light in the future. Element 573370 illustration

第ίο頁Page ίο

Claims (1)

573370 六、申請專利範圍 ' ' 1、 一種三波長ZnSe白光LED,係包含: 一ZnSe白光LED晶粒,主要包含ZnSe藍色發光層及znse 基板層; 一綠色螢光粉,此螢光粉可被藍光波長激發產生綠色 波長光; ' 一封裝基板(或支架); 將ZnSe白光LED晶粒經固晶打線程序固置於封裝基 板宗或支架)上,綠色螢光粉以直接或間接的方式使其 附著於LED晶粒之上再封裝成型。 2、 如申請專利範圍第1項所述之三波長以以白光LED,其 中綠色螢光粉至少包含以下任一種螢光物質·· Y3 (GaxAl卜x ) 5〇12 : Ce ( 〇<x<i ); Ca8Mg (Si〇4 ) 4C12,Eu,Μη ; Ca2MgSi2〇7 : Cl,Eu ; Ba2(MgxZn1.x)Si2 07 : Eu ; 或為上述任兩種以上之混合物。 申μ如U利圍第i項所述之三波長白光 ’其中ZnSe藍色發光層發光波長介於42〇〜480nm之 間0 τ二申'如申凊專利範圍第1項所述之三波長2—白光 ,'中封裝基板(或支架)型態可為金屬、半導 、,瓷、塑料、印刷電路板(PCB )等材料。 申明如U利範圍第1項所述之三波長ZnSe白光573370 6. The scope of the patent application '' 1. A three-wavelength ZnSe white LED, including: a ZnSe white LED crystal grain, mainly including a ZnSe blue light-emitting layer and a znse substrate layer; a green phosphor, this phosphor can Excited by blue light wavelength to generate green wavelength light; 'a package substrate (or bracket); ZnSe white LED die is fixed on the package substrate or bracket via solid-state wire bonding process, and the green fluorescent powder is directly or indirectly It is attached to the LED die and then packaged. 2. According to the three wavelengths described in the scope of the patent application for white light LED, the green phosphor contains at least any of the following fluorescent substances: Y3 (GaxAlbu x) 5〇12: Ce (〇 < x & lt i) Ca8Mg (Si04) 4C12, Eu, Mn; Ca2MgSi207: Cl, Eu; Ba2 (MgxZn1.x) Si2 07: Eu; or a mixture of any two or more of the foregoing. Shen μ as described in the third wavelength white light of U Liwei 'wherein the light emission wavelength of the ZnSe blue light-emitting layer is between 42 and 480 nm 0 τ two Shen' as the three wavelengths described in the first patent scope 2—White light, the type of the middle package substrate (or bracket) can be metal, semiconducting, ceramic, plastic, printed circuit board (PCB) and other materials. Affirm the three-wavelength ZnSe white light as described in item 1 of the U-Range 573370 六、申請專利範圍 LED,其中LED可封裝成燈型(Lamp )、印刷電路板型 (PCB )、正面發光型、側面發光型、表面黏著型 (SMD )、高功率型等。 6、如申請如申請專利範圍第1項所述之三波長Z n S e白光 LED,其中ZnSe晶粒的數量可為單數或複數顆。573370 6. Scope of patent application LEDs, LEDs can be packaged into lamp type (Lamp), printed circuit board (PCB), front-emitting type, side-emitting type, surface-adhesive type (SMD), high-power type, etc. 6. As described in the application of the three-wavelength Z n S e white LED as described in item 1 of the scope of patent application, the number of ZnSe crystal grains may be singular or plural.
TW91118766A 2002-08-19 2002-08-19 Tri-color ZnSe white LED TW573370B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW91118766A TW573370B (en) 2002-08-19 2002-08-19 Tri-color ZnSe white LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW91118766A TW573370B (en) 2002-08-19 2002-08-19 Tri-color ZnSe white LED

Publications (1)

Publication Number Publication Date
TW573370B true TW573370B (en) 2004-01-21

Family

ID=32734195

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91118766A TW573370B (en) 2002-08-19 2002-08-19 Tri-color ZnSe white LED

Country Status (1)

Country Link
TW (1) TW573370B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481061B (en) * 2004-04-16 2015-04-11 Rhodia Chimie Sa Light-emitting diode that emits white light

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481061B (en) * 2004-04-16 2015-04-11 Rhodia Chimie Sa Light-emitting diode that emits white light

Similar Documents

Publication Publication Date Title
JP5255746B2 (en) Single chip LED with three emission spectra of red, blue and green wavelengths
EP1733441B1 (en) Light emitting device and phosphor for the same
US7753553B2 (en) Illumination system comprising color deficiency compensating luminescent material
TWI278128B (en) Light emitting device and lighting fixture
EP2305776B1 (en) Alkaline earth metal sulfide based red phosphor and white light emitting device thereof
US20070090381A1 (en) Semiconductor light emitting device
JP2005093985A (en) Method of generating white light by secondary excitation system and its white light emitting device
US20070170840A1 (en) Phosphor and light emitting device using the same
TW563261B (en) A method and of manufacture for tri-color white LED
US20060249739A1 (en) Multi-wavelength white light emitting diode
JP2003224306A (en) Manufacturing method for white light emitting diode
TW200525781A (en) White light LED
JP2005079583A (en) Broad-spectrum al(1-x-y)inygaxn light emitting diode and solid white light emitting device
US20130015461A1 (en) Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same
US7804162B2 (en) Multi-wavelength white light-emitting structure
KR20040088418A (en) Tri-color white light emitted diode
CN104253121A (en) Omnidirectional light-emitting diode device and packaging method thereof
TW569475B (en) Light emitting diode and method of making the same
JP2004288760A (en) Multilayered led
TW573370B (en) Tri-color ZnSe white LED
WO2007001117A2 (en) White light emitting diode based on mixing of tri-color phosphors
JP2006527502A (en) Light emitting element and phosphor of light emitting element
TW200412682A (en) Pink LED
TW518773B (en) Manufacturing method of white LED
JP2006324653A (en) Light emitting device, liquid crystal display, and lighting device

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees