TW569292B - Estimation method for machine processing parameters of semiconductor equipment and recording medium readable by computer - Google Patents

Estimation method for machine processing parameters of semiconductor equipment and recording medium readable by computer Download PDF

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TW569292B
TW569292B TW91120861A TW91120861A TW569292B TW 569292 B TW569292 B TW 569292B TW 91120861 A TW91120861 A TW 91120861A TW 91120861 A TW91120861 A TW 91120861A TW 569292 B TW569292 B TW 569292B
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machine
process parameter
semiconductor
value
average value
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TW91120861A
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Chinese (zh)
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Cheng I Sun
Ben Fun
Yi-Chuan Lo
Wei-Hsuang Huang
Hsiang-Min Lin
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Taiwan Semiconductor Mfg
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Abstract

The present invention is an estimation method for machine processing parameters of semiconductor equipment, which includes the following steps: first, calculating the first average of processing parameters for the first product manufacturing from multiple machines; then, configuring the first average as the processing parameters of the semiconductor equipments not processing the first product; then, calculating the second average of processing parameters during the manufacturing of multiple different products; using the expectation maximization algorithm to re-configure the processing parameters for producing the first products on the semiconductor equipments based on the first average and the second average.

Description

569292 五、發明說明(1) 本發明係有關於一種半導體設備機台製程參數值預測 方法’且特別有關於一種利用已經製造過產品之類似機台 的相關製程參數值,預測尚未製造此產品之半導體設備機 台在製造此產品時的製程參數值之半導體設備機台製程參 數值預測方法。 隨著半導體產業中高階程序控制(Advanced process Control,Apc)的發展趨勢下,未來於半導體積體電路製 ,之标作及監控策略,將由目前習慣延用單機、單模組、 單變數、與後量測(Post Measurement)品質變數之製程與 設備監控的實施情況轉變成為多機、跨模组、多變數與穿】 程操作、狀態變數及批貨間(Run —1〇 —Run,R2R)控制之即、 時監控策略。 習知半導 多係利用單變 監控、依據重 (Statistical 或是透過製程 的良率與生產 然而,對 法,往往會因 發生,使得半 造出大量之瑕 寺到後績的檢 題發現後,也 體製造廠 數、局部 要品值量 Process 設計、整 效率。 於習知掌 為設備機 導體設備 疫產品。 驗、或良 僅憑製程 商,寸於半導體設備機台的監控,大 製程機台或區段製程機台進行操作 測變數進行統計程序控制 Control,SPC)產品品質管控,亦 合與機台間之例行維護來提升產品 握製程操作、I態與設備狀態的方 台的衰變或不Μ、無預警式的異常 機f會依據不適切的製程參數值製 而泣些没備機台異常的情況通常要 率測試才會發現問題的所在。而問 工私師的經驗法則來提出暫時性的569292 V. Description of the invention (1) The present invention relates to a method for predicting process parameter values of a semiconductor device machine, and particularly to a process parameter value using a similar machine that has already manufactured a product, and predicts that the product has not yet been manufactured. A method for predicting a process parameter value of a semiconductor device machine when the semiconductor device machine is manufacturing this product. With the development trend of advanced process control (Apc) in the semiconductor industry, the standard and monitoring strategy for semiconductor integrated circuit systems in the future will continue to use the single machine, single module, single variable, and The implementation of post measurement quality variable process and equipment monitoring has been transformed into multi-machine, cross-module, multi-variable and wear-out process operation, state variables, and batch room (Run —10—Run, R2R) Immediate control and monitoring strategies. Most of the semi-conductors use single-variable monitoring, which is based on statistical or process yield and production. However, due to the occurrence of law, often a large number of flaws are discovered. , Also the number of manufacturing plants, local essential product value and quantity Process design, overall efficiency. Yu Zhizhang is the epidemic product of equipment, machine, conductor, and equipment. Inspection, goodness depends only on the manufacturer, monitoring and monitoring of semiconductor equipment, large manufacturing process The machine or section process machine performs operational measurement variables and statistical program control (Control, SPC) product quality control, and also incorporates routine maintenance between the machine to improve product square process operation, I state and equipment status. An abnormal machine with decay or no M and no warning type will cry according to the unsuitable process parameter value, and the abnormal situation of the unequipped machine usually requires testing to find out the problem. And ask the rule of thumb of the private and private teachers to propose temporary

569292 五、發明說明(2) =正’而無法有效找出問題的癥結 進行解決。此外,對於部分並未開 備機σ ’也必須依靠製程工程師的 製程參數值進行產品製造,此情況 作失敗的情況發生。 有鑑於此,本發明之主要目的 造過產品之類似機台的相關製程參 未製造此產品之半導體設備機台在 數值’並可以隨時進行動態更新預 程參數值預測方法。 為了達成上述目的,可藉由本 備機台製程參數值預測方法達成。 依據本發明實施例之半導體設 方法,首先,計算多個機台對於一 數值的第一平均值,接著,設定第 第一產品之半導體設備機台之製程 之後,計算此半導體設備機台 時之製程參數值的第二平均值,並 (Expectation Maximization 5 EM) 值與第二平均值重新設定半導體設 之製程參數值。 依據本發明實施例,當製程參 既定數目時,則終止預測該製程參 此外,本發明之可應用至半導 以及無法 始製造產 經驗法則 亦可能造 為提供一 數值,可 製造此產 測之半導 有效針斟問題 品之半導體設 來設定暫時之 成大量產品試 種利用已經製 以自動預測尚 品時的製程參 體設備機台製 發明所提供之半導體設 備機台製 第一產品 一平均值 參數值。 對於多個 利用期望 演算法, 備機台製 數值預測 數值。 體曝光機 程參數值預測 製造之製程參 為尚未處理此 不同產品製造 增大 依據第一平均 造此第一產品 的次數大於一 台、半導體研 0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第6頁 569292 五、發明說明(3) 磨機台、半導體蝕刻機台、與半導體離子植入機台等之半 導體設備機台,且分別相應之製程參數值可以是曝光能 量、研磨時間、蝕刻時間、與離子植入劑量等。 實施例 第1圖係顯示依據本發明實施例之半導體設備機台製 程參數值預測方法之流程圖。 依據本發明實施例之半導體設備機台製程參數值預測 方法,首先,如步驟S1 0,計算多個機台對於一第一產品 製造之製程參數值的第一平均值。接著,如步驟S11,依 據第一平均值設定尚未處理此第一產品之半導體設備機台 之製程參數值。 之後,如步驟,S1 2,計算此半導體設備機台對於多 個不同產品製造時之製程參數值的第二平均值,並如步驟 S13,利用期望增大(Expectation Maximization,EM)演 算法,依據第一平均值與第二平均值重新設定半導體設備 機台製造此第一產品之製程參數值。 此外,依據本發明實施例,當製程參數值預測的次數 大於一既定數目時,則終止預測製程參數值。 值得注意的是,本發明之可應用至半導體曝光機台、 半導體研磨機台、半導體蝕刻機台、與半導體離子植入機 台等之半導體設備機台,且分別相應之製程參數值可以是 曝光能量、研磨時間、蝕刻時間、與離子植入劑量等。 接下來,以半導體曝光機台與其對於產品製造之曝光 能量(製程參數值)進行詳細說明如下:569292 V. Description of the invention (2) = positive, and the crux of the problem cannot be effectively found and solved. In addition, it is necessary to rely on the process parameter values of the process engineer for the part of the non-ready machine σ ′ to make the product. This situation fails. In view of this, the main purpose of the present invention is to refer to a related process of a similar machine that has manufactured a product, and a method for predicting a parameter value of a semiconductor device that has not manufactured the product, and to dynamically update the planned parameter value at any time. In order to achieve the above purpose, it can be achieved by the method for predicting the process parameter value of the standby machine. According to the semiconductor design method of the embodiment of the present invention, first, a first average value of a plurality of machines for a value is calculated, and then, after the manufacturing process of the semiconductor equipment machine of the first product is set, the time when the semiconductor equipment machine is calculated is calculated. The second average value of the process parameter values and the (Expectation Maximization 5 EM) value and the second average value reset the process parameter values of the semiconductor device. According to the embodiment of the present invention, when a predetermined number of process parameters are established, the process parameters are terminated to predict. In addition, the rule of thumb of the invention that can be applied to semiconductors and cannot be manufactured can also be made to provide a value that can be manufactured and tested. The semiconducting effective pin is used to set the semiconductor device of the problem product to temporarily set a large number of products for trial planting. The use of the process equipment and device manufacturing system that has been manufactured to automatically predict when the product is still in use. The first product provided by the semiconductor device manufacturing system is average. Value parameter value. For multiple utilization expectation algorithms, the standby system makes numerical predictions. Bulk exposure machine parameter value prediction manufacturing process parameters have not yet processed the manufacturing of this different product. Increasing the number of times to make this first product based on the first average is greater than one. Semiconductor Research 0503-7587TWf; TSMC2001-1510; yianhou.ptd No. 6 Page 569292 V. Description of the invention (3) Semiconductor equipment such as grinding machine, semiconductor etching machine, and semiconductor ion implantation machine, and the corresponding process parameter values can be exposure energy, grinding time, etching time, With ion implantation dose and so on. Embodiment FIG. 1 is a flowchart showing a method for predicting a process parameter value of a semiconductor device machine according to an embodiment of the present invention. According to the method for predicting a process parameter value of a semiconductor device machine according to an embodiment of the present invention, first, in step S10, a first average value of process parameter values of a plurality of machines for a first product manufacturing is calculated. Next, in step S11, a process parameter value of a semiconductor device machine that has not yet processed the first product is set according to the first average value. Then, as step, S1 2, calculate the second average value of the process parameter values of the semiconductor device machine for manufacturing a plurality of different products, and as step S13, use Expectation Maximization (EM) algorithm, The first average value and the second average value reset the process parameter values of the semiconductor device machine to manufacture the first product. In addition, according to the embodiment of the present invention, when the number of times the process parameter value is predicted is greater than a predetermined number, the prediction of the process parameter value is terminated. It is worth noting that the invention can be applied to semiconductor equipment such as semiconductor exposure equipment, semiconductor polishing equipment, semiconductor etching equipment, and semiconductor ion implantation equipment, and the corresponding process parameter values can be exposure. Energy, grinding time, etching time, and ion implantation dose. Next, the semiconductor exposure machine and its exposure energy (process parameter values) for product manufacturing are described in detail as follows:

0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第7頁 5692920503-7587TWf; TSMC2001-1510; yianhou.ptd page 7 569292

569292 五、發明說明(5) ; dti[k]^d^[k]/rij ,其中,允表示 製程參數值預測的次數。 接著,利用期望增大(Expectation Maximization, EM)演算法,對於陣列D中新填入(預測)曝光能量的位置 (即原先沒有曝光能量資料的部分),依據行平均值與列平 均值重新設定其曝光能量資料’如下表示: ^[ic+l] = + pc]~d^[A:])~(«X?7]Xii [/:]))/((«-1)(?73-1)) 其中,AW.表示前一次該半導體設備機台製造該第一 產品時之製程參數值;4[*+1]代表下一次該半導體設備機 台製造該第一產品時之製程參數值;以及代表列平均 值與行平均值之平均值。 注意的是,重新設定之微調操作可以定義條件令其停 止預測製程參數值。舉例來說,可以設定當製程參數值預 測的次數U值)大於一既定數目時,終止預測該製程參數 值;亦或定義一值,〜=1 ,即當重 新微調設定前先檢查所有預測值之間的差距是否到達一個 既定臨限值,如判斷是否大於1 (Γ - 5,若μ > 1 (Γ - 5則代表 微調的差額已經超過一定間距,則終止預測該製程參數 值,更可傳送警告訊號或電子郵件予製程工程師以要求進 一步校正。 接下來,舉一實例進行說明。第2圖顯示一製程參數 值表例子。假設製程參數值表中包括四種機台(DPPHE1、569292 V. Description of the invention (5); dti [k] ^ d ^ [k] / rij, where allow represents the number of times the process parameter value is predicted. Next, using the Expectation Maximization (EM) algorithm, the position where the exposure energy is newly filled (predicted) in the array D (that is, the part without the exposure energy data) is reset according to the row average value and the column average value. Its exposure energy data 'is as follows: ^ [ic + l] = + pc] ~ d ^ [A:]) ~ («X? 7] Xii [/:])) / ((«-1) (? 73 -1)) Among them, AW. Represents the process parameter value when the semiconductor device machine manufactured the first product the last time; 4 [* + 1] represents the process parameter when the semiconductor device machine manufactured the first product the next time Values; and the average of the column and row averages. Note that the reset operation can define conditions to stop it from predicting process parameter values. For example, it can be set to stop predicting the value of the process parameter when the number of predictions of the process parameter value (U value) is greater than a predetermined number; or to define a value, ~ = 1, that is, to check all predicted values before readjusting the settings Whether the gap between them reaches a predetermined threshold, such as judging whether it is greater than 1 (Γ-5, if μ > 1 (Γ-5 indicates that the fine-tuning difference has exceeded a certain distance, then terminate the prediction of the process parameter value, more A warning signal or e-mail can be sent to the process engineer to request further correction. Next, an example is used for illustration. Figure 2 shows an example of a process parameter value table. Assume that the process parameter value table includes four types of machines (DPPHE1, DPPHE1,

0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第 9 頁 569292 五、發明說明(6) DPPHE2、DPPHE5、DPPHE6)與三種產品(8205 1 20A、 8358120A、8595120A)之曝光能量資料。其中,DPPHE1機 台對於產品8358 1 20A及DPPHE2機台對於產品8595 1 20A並沒 有曝光能量資料,即DPPHE1機台尚未製造過產品8358120A 且0??1^2機台尚未製造過產品8595 1 20八。 首先’藉由公式式.=¾A /(W — L!山=1,...” ,針對每一列計算 其列平均值: (第1 列)列平均值二(31.38 + 28.24 + 33.17 + 34.96) /4-31.94 (第2 列)列平均值=(28.81 + 33.46 + 33.65)/3 = 31.97 (第3 列)列平均值=(29· 11 + 31. 51 + 32. 72)/3 = 31. 11 之後’每一列中沒有曝光能量資料的部分即設定為該 列之列平均值,如第3圖所示。 接著’對於預測值進行第一次微調(fc = 1),分別利用公 式 <_[fc] ⑻/WM==1,· ”與 <刺=之非]/«j = i,·.·抑 ,計算列平均值 K.)與行平均值(\): (第1 列)列平均值= (31.38 + 28.24 + 33· 17 + 34.96) /4-31. 94 (第2 列)歹,J + 立句值:(31· 97 + 28· 81+33· 46 + 33· 65) /4=31.97 (第 3 列)歹11 平均值= ( 2 9. 1 1 +3 1. 1 1 +3 1. 5 1 + 32. 72 )/ 4=31.11 (第1 行)行平均值= ( 3 1. 38 + 3 1. 9 7 + 29· 11)/3 = 30. 820503-7587TWf; TSMC2001-1510; yianhou.ptd page 9 569292 V. Description of the invention (6) DPPHE2, DPPHE5, DPPHE6) and three products (8205 1 20A, 8358120A, 8595120A) exposure energy data. Among them, the DPHHE1 machine has no exposure energy data for the product 8358 1 20A and the DPHHE2 machine has the product 8595 1 20A. That is, the DPHHE1 machine has not manufactured the product 8358120A and the 0 ^ 1 ^ 2 machine has not manufactured the product 8595 1 20 Eight. First, by using the formula. = ¾A / (W — L! Mountain = 1, ... ”, calculate the column average for each column: (Column 1) The column average is two (31.38 + 28.24 + 33.17 + 34.96 ) /4-31.94 (column 2) column average = (28.81 + 33.46 + 33.65) / 3 = 31.97 (column 3) column average = (29 · 11 + 31. 51 + 32. 72) / 3 = After 31.11, the portion of each column that has no exposure energy data is set to the average value of that column, as shown in Figure 3. Next, the first fine-tuning of the predicted value (fc = 1), using the formula respectively < _ [fc] ⑻ / WM == 1, · "and < thorn = the difference] /« j = i, ···, calculate the column average K.) and row average (\): (\): ( Column 1) column average = (31.38 + 28.24 + 33 · 17 + 34.96) / 4-31. 94 (column 2) 歹, J + sentence value: (31 · 97 + 28 · 81 + 33 · 46 + 33 · 65) /4=31.97 (column 3) 歹 11 Mean = (2 9. 1 1 +3 1. 1 1 +3 1. 5 1 + 32. 72) / 4 = 31.11 (row 1 ) Row average = (3 1. 38 + 3 1. 9 7 + 29 · 11) / 3 = 30. 82

569292 五、發明說明(7) (第2 行)行平均值= (28·24 + 28·81+3111)/3 = 29·39 (第3行)行平均值=(3317 + 3346 + 31.51)/3 = 3271 (第4 行)行平均值= (34·96 + 3365 + 32·72)/3 = 3378 因此’可以設定新的預測值為: (4χ (3χ 0. 82-31. 97) + 3 χ ( 4 x 3 1.97-3 1.97 ) 〜( 1 2 x 3 1.67 - 3 1.97 ))/6:30.27 (4x (3x 29. 39-31. ll)+3x (4x 31.11- 31. 11)-(12x 31. 67-31. 11))/6-26. 82 之後’將預測值重新寫回表格,如第4 A圖所示。此 夕^ ’以可重複上述微調的操作,其第二次微調0 = 與第三 -人微調(fc = 3)後的結果分別顯示於第“與4(:圖。 二 此外’本發明亦可編碼為一電腦程式於電腦可讀取之 。己錄媒體之中。該電腦程式用以致能半導體設備機台之製 裎參數值預測,如本發明所述。 因此’藉由本發明所提供之半導體設備機台製程參數 測方法’可以利用已經製造過產品之類似機台的相關 ^私參數值’動態預測尚未製造此產品之半導體設備機台 =製造此產品時的製程參數值M吏得在不需要人力介入的 二况下半冷體δ又備機台中的製程參數值可以依據類似機 二的製造情況自動進行預測與微調,大幅地增加整體產 j率、提升產品製造良率、同時減少人為調整時所可能 來的疏誤情況。 雖然本發明已以較佳實施例揭露如上,然其並非用以569292 V. Description of the invention (7) (line 2) line average = (28 · 24 + 28 · 81 + 3111) / 3 = 29 · 39 (line 3) line average = (3317 + 3346 + 31.51) / 3 = 3271 (line 4) row average = (34 · 96 + 3365 + 32 · 72) / 3 = 3378 So 'can set a new prediction value: (4χ (3χ 0. 82-31. 97) + 3 χ (4 x 3 1.97-3 1.97) ~ (1 2 x 3 1.67-3 1.97)) / 6: 30.27 (4x (3x 29. 39-31. Ll) + 3x (4x 31.11- 31. 11) -(12x 31. 67-31. 11)) / 6-26. 82 After 'write the predicted value back to the table, as shown in Figure 4A. Now ^ 'To repeat the above-mentioned fine-tuning operation, the results after the second fine-tuning 0 = and the third-person fine-tuning (fc = 3) are shown in the "" and 4 (: Fig. 2). In addition, the invention also It can be coded into a computer program which can be read by the computer. In the recorded medium. The computer program is used to enable the prediction of the manufacturing parameter value of the semiconductor device machine, as described in the present invention. Therefore, 'provided by the present invention Method for measuring the process parameter of a semiconductor device machine 'can use the relevant ^ private parameter values of similar machines that have already manufactured products' to dynamically predict the semiconductor device machine that has not yet manufactured this product = the value of the process parameter when manufacturing this product In the second case, which does not require human intervention, the process parameter values in the semi-cold body δ and the machine can be automatically predicted and fine-tuned according to the manufacturing situation of the similar machine II, which greatly increases the overall production rate, improves the product manufacturing yield, and reduces Mistakes that may occur during artificial adjustments. Although the present invention has been disclosed above in the preferred embodiment, it is not intended to

569292 五、發明說明(8) 限定本發明,任何熟悉此項技藝者,在不脫離本發明之精 神和範圍内,當可做些許更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第12頁 569292569292 V. Description of the invention (8) The invention is limited. Anyone who is familiar with this technology can do some modifications and retouching without departing from the spirit and scope of the invention. Therefore, the scope of protection of the invention shall be regarded as the attached application. The patent scope shall prevail. 0503-7587TWf; TSMC2001-1510; yianhou.ptd page 12 569292

為使本發明之上述目的、特徵和優點能更明 下文特舉實施例,並配合所附圖示,進行詳細說明如下 第1圖係顯示依據本發明實施例之半導體設 程參數值預測方法之流程圖。 '口、 第2圖顯示一製程參數值表例子。 明實施例之In order to make the above-mentioned objects, features, and advantages of the present invention clearer, the following specific embodiments are described in detail with the accompanying drawings. The following figure 1 shows a method for predicting a semiconductor programming parameter value according to an embodiment of the present invention. flow chart. Figure 2 shows an example of a process parameter value table. Of the embodiment

第3圖顯示第2圖之製程參數值表經過本發 製程參數值預測後的結果。 XFig. 3 shows the result of the process parameter value table of Fig. 2 after the process parameter value prediction of this issue. X

第4 A圖顯示苐3圖之製程參數值表經過本發明實施例 之製程參數值預測後的結果。 KFIG. 4A shows the result of the process parameter value table of FIG. 3 after the process parameter value prediction of the embodiment of the present invention. K

第4Β圖顯示第4Α圖之製程參數值表再依據本發明實施 例進行製程參數值微調後的結果。 第4C圖顯示第4Β圖之製程參數值表再依據本發明實施 例進行製程參數值微調後的結果。 、 符號說明 S 1 0、S11、…、S1 3〜操作步驟。FIG. 4B shows the result of the process parameter value table in FIG. 4A after fine-tuning the process parameter values according to the embodiment of the present invention. Fig. 4C shows the result of the process parameter value table in Fig. 4B after fine adjustment of the process parameter values according to the embodiment of the present invention. , Symbol description S 1 0, S11, ..., S1 3 ~ Operation steps.

Claims (1)

569292 六、申請專利範圍 .. 1. 一種半導體設備機台之製程參數值預測方法,包括 下列步驟: _ 計算複數機台對於一第一產品製造時之製程參數值的 第一平均值;以及 依據該第一平均值設定尚未處理該第一產品之一半導 體設備機台之製程參數值。 2. 如申請專利範圍第1項所述之半導體設備機台之製 程參數值預測方法,更包括下列步驟: 計算該半導體設備機台對於複數不同產品製造時之製 程參數值的第二平均值;以及 H 依據該第一平均值與該第二平均值設定該半導體設備 ’ 機台製造該第一產品之製程參數值。 · 3. 如申請專利範圍第1項所述之半導體設備機台之製 程參數值預測方法,其中依據該第一平均值設定尚未處理 該第一產品之該半導體設備機台之製程參數值係將該半導 體設備機台製造該第一產品時之製程參數值設為該第一平 均值。 4. 如申請專利範圍第2項所述之半導體設備機台之製 程參數值預測方法,其中依據該第一平均值與該第二平均 值設定該半導體設備機台製造該第一產品之製程參數值係 依據下列方程式進行指定: 4[女+1]= (wiX(«Xd y[k]-άΗ [/c]) + ηχ 1)(^-1)) 其中,k表示製程參數值預測的次數;m代表包含該 ·569292 6. Scope of patent application: 1. A method for predicting the process parameter value of a semiconductor equipment machine, including the following steps: _ Calculating the first average value of the process parameter value of a plurality of machines for the manufacture of a first product; and the basis The first average value sets a process parameter value of a semiconductor device machine of one of the first products. 2. The method for predicting the process parameter value of the semiconductor equipment machine as described in item 1 of the scope of the patent application, further comprising the following steps: Calculating a second average value of the process parameter value of the semiconductor equipment machine when manufacturing a plurality of different products; And H sets a process parameter value of the semiconductor device 'machine for manufacturing the first product according to the first average value and the second average value. · 3. The method for predicting the process parameter value of the semiconductor device machine as described in item 1 of the scope of the patent application, wherein the process parameter value of the semiconductor device machine that has not yet been processed for the first product is set according to the first average value. A process parameter value when the semiconductor device machine manufactures the first product is set to the first average value. 4. The method for predicting a process parameter value of a semiconductor device machine as described in item 2 of the scope of patent application, wherein the process parameter for the semiconductor device machine to manufacture the first product is set according to the first average value and the second average value. The value is specified according to the following equation: 4 [女 +1] = (wiX («Xd y [k] -άΗ [/ c]) + ηχ 1) (^-1)) where k represents the predicted value of the process parameter Number of times; m represents the 0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第14頁 569292 六、申請專利範圍 等機台血該主& & 1。二 導體設備機台的數目;《代表包含該等不同 座σ口與该第一姦口 機台製造該蜜況纟示前一次該半導體設備 ^ m Γ —產品時之製程參數值;4卜丨]代表下一次 =¥ °又備機台製造該第一產品時之製程參數值;^] 夺^ ί第1平均值;七网代表該第二平均值;以及(㈦代 表该广-平:值與該第二平均值之平均值。 浐夹虹如申4專利範圍第4項所述之半導體設備機台之製 佶广士值預’則方法’更包括當製程參數值預測的次數U 於既疋數目時,終止預測該製程參數值。 〇 6 ·如申凊專利範圍第1項所述之半導體設備機台之製 私參數值預測方法,其中該半導體設備機台為半導體曝光 機台。 千 7.如申請專利範圍第6項所述之半導體設備機台之製 私參數值預測方法,其中該製稃參數值為曝光能量。 8 ·如申請專利範圍第丨項所述之半導體設備機台之製 程參數值預測方法,其中該 導體設備機台為半導體研磨 機台。 9. 如申請專利範圍第8項所述之半導體設備機台之製 程參數值預測方法,其中該f穩參數值為研磨時間。 10. 如申請專利範圍第;項所述之半導體設備,台之製 程參數值預測方法,其中該半導體設備機台為半導體钱刻 機台。 I ! , A, ^ ^ i i本導體設備機台之 II ·如申❺專利範圍第1 〇項所丄之牛¥0503-7587TWf; TSMC2001-1510; yianhou.ptd Page 14 569292 VI. Scope of patent application The main blood & The number of two-conductor equipment machines; "Represents the honeycomb condition including the different sigma sockets and the first rape machine, indicating the previous semiconductor equipment ^ m Γ-process parameter value at the time of the product; 4 Bu 丨] Represents the next time = ¥ ° and the manufacturing process parameter value when the first product is manufactured by the machine; ^] wins the first average value; Qinet represents the second average value; and (㈦ represents the Guang-ping: The average value of the value and the second average value. The manufacturing method of the semiconductor equipment machine described in item 4 of the patent application No. 4 of the patent application. The "precision method" further includes the number of times U when the process parameter value is predicted. When the existing number is reached, the prediction of the process parameter value is terminated. 〇6. The method for predicting the private parameter value of the semiconductor equipment machine as described in the first item of the patent scope of the application, wherein the semiconductor equipment machine is a semiconductor exposure machine . 7. The method for predicting the private parameter value of the semiconductor device machine as described in item 6 of the scope of the patent application, wherein the parameter value is the exposure energy. 8 · The semiconductor device as described in the scope of the patent application Machine process parameter value prediction Measuring method, wherein the conductor equipment machine is a semiconductor polishing machine. 9. The method for predicting the process parameter value of the semiconductor equipment machine as described in item 8 of the scope of patent application, wherein the f-stable parameter value is a grinding time. 10. The method for predicting the process parameter value of a semiconductor device as described in item 1 of the scope of application for a patent, wherein the semiconductor device machine is a semiconductor money engraving machine. I!, A, ^ ^ ii of this conductor equipment machine II · Bull as claimed in item 10 of the patent scope ¥ 0503-7587TWf ; TSMC2001 -1510 : yianhou.ptd 第15貢 5692920503-7587TWf; TSMC2001 -1510: yianhou.ptd 15th tribute 569292 六、申請專利範圍 製程參數值預測方法,其中該製程參數值為蝕刻時間。 1 2·如申請專利範圍第1項所述之半導體設備機台之事 程參數值預測方法,其中該半導體設備機台為半導體離^ 1 3 ·如申請專利範圍第丨2項所述之半導體設備機台之 製程參數值預測方法,其中該製程參數值為離子植入劑 量0 1 4 · 一種半導體設備機台之製程參數值預測方法,包 括下列步驟: 計算複數機台對於一第一產品製造時之製程參數值 第一平均值; 又疋5亥苐一平均值為尚未處理該第一產品之一半導體 設備機台之製程參數值; 計算該半導體設備機台對於複數不同產品製造時之製 程參數值的第二平均值;以及 利用期望增大(Expectation Maximizati〇n,演算 法,依據該第一平均值與該第二平均值重新設定該半導體 設備機台製造該第一產品之製程參數值。6. Scope of patent application: A method for predicting a process parameter value, wherein the process parameter value is an etching time. 1 2 · The method for predicting process parameter values of the semiconductor device machine as described in item 1 of the scope of the patent application, wherein the semiconductor device machine is a semiconductor device ^ 1 3 · The semiconductor device as described in the item 2 of the patent application scope Method for predicting process parameter values of equipment machines, wherein the process parameter value is an ion implantation dose of 0 1 4 · A method for predicting process parameter values of semiconductor equipment machines, including the following steps: Calculating a plurality of machines for a first product manufacturing The first average value of the process parameter values at that time; and the average value is the process parameter value of a semiconductor device machine that has not yet processed one of the first products; the process of manufacturing the semiconductor device machine for a plurality of different products is calculated A second average value of the parameter value; and an Expectation Maximization algorithm, which resets the process parameter values of the semiconductor device machine to manufacture the first product according to the first average value and the second average value . 1 5 ·如申請專利範圍第1 4項所述之半導體設備機台之 製程參數值預測方法’其中利用期望增大(E Μ )演算法,依 據該第一平均值與該第二平均值重新設定該半導體設備機 台製造该第一產品之製程參數值係依據下列方程式進行指 定:15 · The method for predicting the process parameter value of the semiconductor equipment machine as described in Item 14 of the scope of the patent application, wherein the expected increase (EM) algorithm is used to re-calculate based on the first average value and the second average value. The process parameter values for setting the semiconductor device machine to manufacture the first product are specified according to the following equations: 0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第16頁 569292 六、申請專利範圍 , λα -ir數;w代表包含該 其中’ 表示製程參數值預測的/含誃 等機台與該半導體設備機台的數目;"代'^ 產品與該第-產品的It目;㈣前〆次該;導體設f 機台製造該第一產品時之製程參數值;厂、下人 該半導體設備機台製造該第一產品時之製程參數值, 代表該第一平均值;〇]代表該第;平均值,、及代 表該第一平均值與該第二平均值之平均值。 1 6·如中請專利範圍第丨5項所述之半導箱久 \台, 製程參數值預測方法,更包括當製稃參數值預'、的次數(允 值)大於一既定數目時,終止預測該製程參數值 1 7 ·如申請專利範圍第丨4項所述之半導體°又備機i台之 製程參數值預測方法,其中該半導體設備機台為半導體曝 光機台。 1 8 ·如申請專利範圍第1 7項所述之半導體°又備機台之 製程參數值預測方法,其中該製稃參數值為曝光能量。 19·如申請專利範圍第14項所述之半導體設備機台之 ,製程參數值預測方法,其中該半導體設備機台為半導體研 磨機台。 2 0 ·如申請專利範圍第1 9項所述之半導體设備機台之 製程參數值預測方法,其中該製稃參數值為研磨時間。 2 1 ·如申請專利範圍第丨4項所述之半導體設備機台之0503-7587TWf; TSMC2001-1510; yianhou.ptd page 16 569292 VI. Patent application scope, λα-ir number; w stands for the machine that includes' which represents the prediction of process parameter values / including 誃 and other semiconductor equipment machines The number of "" generations of the product and the product of the first product; the previous one; the value of the process parameters when the conductor set f machine manufactures the first product; the manufacturer, the manufacturer of the semiconductor equipment machine The value of the process parameter for the first product represents the first average value; 0] represents the first; average value, and represents the average value of the first average value and the second average value. 1 6 · As described in Item 5 of the patent scope, the semi-conductor box is long, and the method of predicting the process parameter value further includes when the number of times of the process parameter value prediction is greater than a predetermined number, Terminate the prediction of the process parameter value 17 · The method for predicting the process parameter value of the semiconductor device and the machine as described in item 4 of the patent application scope, wherein the semiconductor equipment machine is a semiconductor exposure machine. 1 8 · The method for predicting the process parameter value of the semiconductor device and the machine as described in item 17 of the scope of patent application, wherein the process parameter value is the exposure energy. 19. The method for predicting process parameter values of the semiconductor equipment machine as described in item 14 of the scope of application for a patent, wherein the semiconductor equipment machine is a semiconductor grinding machine. 2 0. The method for predicting the process parameter value of the semiconductor equipment machine as described in item 19 of the scope of patent application, wherein the process parameter value is a grinding time. 2 1 · Semiconductor equipment as described in item 4 of the scope of patent application 0503-7587TWf ; TSMC2001 -1510 ; yianhou.ptd 第17頁 569292 六、申請專利範圍 製程參數值預測方法,其中該半導體設備機台為半導體蝕 刻機台。 2 2.如申請專利範圍第2 1項所述之半導體設備機台之 製程參數值預測方法,其中該製程參數值為蝕刻時間。 2 3.如申請專利範圍第1 4項所述之半導體設備機台之 製程參數值預測方法,其中該半導體設備機台為半導體離 子植入機台。 2 4.如申請專利範圍第23項所述之半導體設備機台之 製程參數值預測方法,其中該製程參數值為離子植入劑 量。 2 5. —種半導體曝光機台之曝光能量預測方法,包括 。 下列步驟: - 計算複數曝光機台對於一第一產品製造時之曝光能量 的第一平均值; 將該第一平均值設定為尚未處理該第一產品之一半導 體曝光機台之曝光能量; 計算該半導體曝光機台對於複數不同產品製造時之曝 光能量的第二平均值;以及 依據下列方程式重新指定該半導體曝光機台製造該第 一產品時之曝光能量: 0 4[女+1]= [mx[nxd ^]-ά^ [/(:]) + «χ x^ [fc]-iiv[ic]))/((η -1)(^3-1)) 其中,;c表示曝光能量預測的次數;m代表包含該等 曝光機台與該半導體曝光機台的數目;η代表包含該等不 '0503-7587TWf; TSMC2001 -1510; yianhou.ptd page 17 569292 VI. Patent application scope Prediction method of process parameter values, in which the semiconductor equipment machine is a semiconductor etching machine. 2 2. The method for predicting a process parameter value of a semiconductor device machine as described in item 21 of the scope of patent application, wherein the process parameter value is an etching time. 2 3. The method for predicting the process parameter value of the semiconductor device machine as described in item 14 of the scope of patent application, wherein the semiconductor device machine is a semiconductor ion implantation machine. 2 4. The method for predicting a process parameter value of a semiconductor device machine as described in item 23 of the scope of patent application, wherein the process parameter value is an ion implantation amount. 2 5. A method for predicting the exposure energy of a semiconductor exposure machine, including. The following steps:-Calculate a first average value of the exposure energy of the plurality of exposure machines for the manufacture of a first product; set the first average value as the exposure energy of one of the semiconductor exposure machines of the first product; The second average value of the exposure energy of the semiconductor exposure machine for manufacturing a plurality of different products; and the redesignation of the exposure energy of the semiconductor exposure machine when manufacturing the first product according to the following equation: 0 4 [女 +1] = [ mx [nxd ^]-ά ^ [/ (:]) + «χ x ^ [fc] -iiv [ic])) / ((η -1) (^ 3-1)) where, c is the exposure energy The number of predictions; m represents the number of exposure machines and the semiconductor exposure machine; 0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第18頁 569292 六、申請專利範圍 同產品與該第一產品的數目;4闵表示前一次該半導體曝 光機台製造該第一產品時之曝光能量;4k+i]代表下一次 該半導體曝光機台製造該第一產品時之曝光能量;代 表該第一平均值;七㈨代表該第二平均值;以及义Μ代表 該第一平均值與該第二平均值之平均值。 2 6 ·如申請專利範圍第2 5項所述之半導體曝光機台之 曝光能量預測方法,更包括當曝光能量預測的次數(值) 大於一既定數目時,終止預測該曝光能量。0503-7587TWf; TSMC2001-1510; yianhou.ptd page 18 569292 6. The number of patent applications for the same product and the number of the first product; 4 Min represents the exposure energy when the semiconductor exposure machine manufactured the first product last time; 4k + i] represents the exposure energy at the next time the semiconductor exposure machine manufactures the first product; represents the first average value; Qi㈨ represents the second average value; and YM represents the first average value and the first The average of the two averages. 2 6 · The method for predicting exposure energy of a semiconductor exposure machine as described in item 25 of the scope of patent application, further comprising terminating the prediction of the exposure energy when the number (value) of the exposure energy prediction is greater than a predetermined number. 2 7 · —種電腦可讀取之記錄媒體,編碼一電腦程式來 致能半導體設備機台之製程參數值預測,該半導體設備機 台之製程參數值預測方法包括下列步驟: 計算複數機台對於一第一產品製造時之製程參數值的 第一平均值; 設定該第一平均值為尚未處理該第一產品之一半導體 設備機台之製程參數值; 計算該半導體設備機台對於複數不同產品製造時之製 程參數值的第二平均值;以及2 7 · —A computer-readable recording medium that encodes a computer program to enable the prediction of process parameter values for semiconductor equipment machines. The method for predicting the process parameter values of semiconductor equipment machines includes the following steps: A first average value of a process parameter value at the time of manufacturing a first product; setting the first average value to a value of a process parameter of a semiconductor device machine that has not yet processed the first product; calculating the semiconductor device machine for a plurality of different products A second average of process parameter values at the time of manufacture; and 利用期望增大(Expectation Maximization,ΕΜ)演算 法,依據該第一平均值與該第二平均值重新設定該半導體 設備機台製造該第一產品之製程參數值。 2 8 ·如申請專利範圍第2 7項所述之電腦可讀取之記錄 媒體,其中利用期望增大(EM)演算法,依據該第一平均值 與該第二平均值重新設定該半導體設備機台製造該第一產The Expectation Maximization (EM) algorithm is used to reset the process parameter values of the semiconductor device machine to manufacture the first product according to the first average value and the second average value. 2 8 · The computer-readable recording medium described in item 27 of the scope of patent application, wherein an expected increase (EM) algorithm is used to reset the semiconductor device according to the first average value and the second average value Machine made the first product 〇503-7587TWf *. TSMC2001 -1510 · yianhou.ptd 第19頁 569292〇503-7587TWf *. TSMC2001 -1510 · yianhou.ptd Page 19 569292 六、申請專利範圍 品之製程參數值係依據下列方程式進行指定: [mxinxd^ [fc] ^ [k])- [nxrn^M-[^)/^ __ ^ ^ 其中,k表示製程參數值預測的次數;w代表包含該等 機台與該半導體設備機台的數目;《代表包含該等不同產 品與該第一產品的數目;表示前一=欠該半導體設備機 台製造該第一產品時之製程參數值;Α[Ηι]代表了 一次該 半導體設備機台製造該第一產品時之製程參數值;^ 以及代表6. The process parameter values of the patented products are specified according to the following equation: [mxinxd ^ [fc] ^ [k])-[nxrn ^ M-[^) / ^ __ ^ ^ where k represents the prediction of process parameter values W represents the number of the equipment and the semiconductor equipment; "represents the number of the different products and the first product; represents the previous one = when the semiconductor equipment machine was used to manufacture the first product Process parameter value; A [Ηι] represents the process parameter value when the semiconductor device machine manufactures the first product; ^ and represents 表該第一平均值;代表該第二平均值 該第^一平均值與邊第二平均值之平均值。 29.如申請專利範圍第28項所述之電腦可讀取之 媒體’其中該電腦程式更致能當製程參數值預測的次= 值)大於一既定數目時,終止預測該製程參數值。 3 0.如申請專利範圍第27項所述之電腦可讀取之記 媒體,其中S玄半導體設備機台為半導體曝光機台。 31.如申請專利範圍第3 〇項所述之電腦可讀取之記錄 媒體’其中該製程參數值為曝光能量。 3 2 ·如申清專利範圍第2 7項所述之電腦可讀取之記錄 媒體’其中該半導體設備機台為半導體研磨機台。The first average value is represented by the average value of the second average value and the second average value of the edge. 29. The computer-readable medium according to item 28 of the scope of the patent application, wherein the computer program is more capable of terminating the prediction of the process parameter value when the predicted value of the process parameter value is greater than a predetermined number. 30. The computer-readable recording medium as described in item 27 of the scope of patent application, wherein the Suan semiconductor equipment machine is a semiconductor exposure machine. 31. The computer-readable recording medium 'described in item 30 of the scope of patent application, wherein the process parameter value is exposure energy. 3 2 · The computer-readable recording medium as described in item 27 of the patent application scope, wherein the semiconductor equipment machine is a semiconductor polishing machine. 33.如申請專利範圍第32項所述之電腦可讀取之記錄 媒體’其中该製程參數值為研磨時間。 34·如申清專利範圍第27項所述之電腦可讀取之記錄 媒體,其中4半導體設備機台為半導體蝕刻機台。33. The computer-readable recording medium 'described in item 32 of the scope of patent application, wherein the process parameter value is a grinding time. 34. The computer-readable recording medium as described in item 27 of the patent application scope, in which 4 semiconductor equipment tools are semiconductor etching machines. 569292 六、申請專利範圍 35. 如申請專利範圍第34項所述之電腦可讀取之記錄 媒體,其中該製程參數值為蝕刻時間。 36. 如申請專利範圍第27項所述之電腦可讀取之記錄 媒體,其中該半導體設備機台為半導體離子植入機台。 37. 如申請專利範圍第36項所述之電腦可讀取之記錄 媒體,其中該製程參數值為離子植入劑量。 3 8. —種電腦可讀取之記錄媒體,編碼一電腦程式來 致能半導體曝光機台之曝光能量預測,該半導體曝光機台 之曝光能量預測方法包括下列步驟: 計算複數曝光機台對於一第一產品製造時之曝光能量 的第一平均值; 將該第一平均值設定為尚未處理該第一產品之一半導 體曝光機台之曝光能量; 計算該半導體曝光機台對於複數不同產品製造時之曝 光能量的第二平均值;以及 依據下列方程式重新指定該半導體曝光機台製造該第 一產品時之曝光能量: 心[允+1]= (^3x(»xd [ic]) + «x 1^71M)- [nxm x^1 [A:]-^^[A:]))/((?i- l)(w3-l)) 其中,k表示曝光能量預測的次數;m代表包含該等 曝光機台與該半導體曝光機台的數目;η代表包含該等不 同產品與該第一產品的數目;表示前一次該半導體曝 光機台製造該第一產品時之曝光能量;代表下一次569292 6. Scope of patent application 35. The computer-readable recording medium described in item 34 of the scope of patent application, wherein the process parameter value is the etching time. 36. The computer-readable recording medium described in item 27 of the scope of the patent application, wherein the semiconductor device machine is a semiconductor ion implantation machine. 37. The computer-readable recording medium described in item 36 of the scope of patent application, wherein the process parameter value is the ion implantation dose. 3 8. —A computer-readable recording medium that encodes a computer program to enable the exposure energy prediction of a semiconductor exposure machine. The exposure energy prediction method of the semiconductor exposure machine includes the following steps: The first average value of the exposure energy during the manufacture of the first product; setting the first average value as the exposure energy of a semiconductor exposure machine that has not yet processed one of the first products; calculating the semiconductor exposure machine for the manufacture of a plurality of different products The second average value of the exposure energy; and the reassignment of the exposure energy when the semiconductor exposure machine manufactures the first product according to the following equation: Heart [Perspective +1] = (^ 3x (»xd [ic]) +« x 1 ^ 71M)-[nxm x ^ 1 [A:]-^^ [A:])) / ((? I- l) (w3-l)) where k is the number of times the exposure energy is predicted; m is the number containing The number of the exposure machines and the semiconductor exposure machine; η represents the number of the different products and the first product; represents the exposure energy when the semiconductor exposure machine manufactured the first product in the previous time; represents the next time 0503-7587TWf ; TSMC2001-1510 ; yianhou.ptd 第21頁 569292 六、申請專利範圍 該半導體曝光機台製造該第一產品時之曝光能量;Ο]代 表該第一平均值;代表該第二平均值;以及代表 該第一平均值與該第二平均值之平均值。 3 9 ·如申請專利範圍第3 8項所述之電腦可讀取之記錄 媒體,其中該電腦程式更致能當曝光能量預測的次數G 值)大於一既定數目時,終止預測該曝光能量。0503-7587TWf; TSMC2001-1510; yianhou.ptd page 21 569292 VI. Patent application scope Exposure energy of the semiconductor exposure machine when manufacturing the first product; 0] represents the first average value; represents the second average value ; And represents the average of the first average and the second average. 39. The computer-readable recording medium described in item 38 of the scope of patent application, wherein the computer program is more capable of terminating the exposure energy when the number of exposure energy prediction times (G value) is greater than a predetermined number. 0503-7587TWf ; TSMC2001 -1510 ; yianhou.ptd 第22頁0503-7587TWf; TSMC2001 -1510; yianhou.ptd page 22
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385492B (en) * 2008-12-16 2013-02-11 Ind Tech Res Inst A system for maintaining and analyzing manufacturing equipment and method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI385492B (en) * 2008-12-16 2013-02-11 Ind Tech Res Inst A system for maintaining and analyzing manufacturing equipment and method therefor

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