TW567568B - Magnetic field generation device - Google Patents

Abstract

A magnetic field generation device is disclosed, which can provide a corresponding magnetic field to a plasma chamber according to the inputted power signal externally. It comprises the following components: a driving device to output the corresponding current signal based on the power signal; a magnetic field generation device to generate the magnetic field based on the current signal; a converting device to convert the current signal into the corresponding operation voltage signal; an error determination device to compare the operation voltage signal and generate the preset voltage signal required by generation of magnetic field. When the operation voltage signal is different from the preset voltage signal, output an error signal. Finally, the error signal is inputted into the error message detection device, the power signal stops and the operation of plasma chamber is stopped.

Description

567568 V. Description of the invention (1) The present invention relates to a magnetic field generating device, and more particularly to a magnetic field generating device capable of accurately detecting an error in the output magnetic field. Refer to FIG. 1. FIG. 1 is a schematic block diagram showing a plasma chamber of a conventional etching process. As shown in Figure 1, four sets of coils 12 are set around the plasma chamber of the etching process. By controlling the current flowing through each coil 12, a corresponding magnetic field can be generated. In addition, the current flowing through each coil 2 is independent. By controlling the phase of each current, a magnetic field direction of 16 rotating in the direction described by reference numeral 14 can be generated inside the plasma chamber of the etching process. Refer to FIG. 2, which is a schematic side view of a plasma chamber in a conventional etching process. As shown in FIG. 2, the plasma chamber 10 in the etching process has a plasma 18A used for the rice engraving process. Due to the physical characteristics of the plasma 18A itself, during the etching process, the middle part of the wafer 20A is The etching rate of the wafer will be much greater than the etching rate of the 20A edge of the wafer. Therefore, the etching result of the wafer 20A as shown in Figure 2 will be caused, so that the etched wafer cannot meet the planarization requirements. 1. In order to improve the flatness of the wafer, refer to FIG. 3, which is a schematic side view of a plasma chamber in a conventional etching process. As shown in FIG. 3, a coil 12 capable of generating a magnetic field is provided around the plasma chamber 10 of the etching process. The magnetic force provided by the coil 12 can cause the plasma 18β to extend around the plasma chamber 10 of the etching process. . Therefore, during the etching process, the etching rate of the plasma 8B to the surface of the wafer 20B will be approximately the same, which improves the flatness of the wafer after etching. In order to make the plasma evenly extend around the plasma chamber of the etching process, a stable coil power must be provided to ensure that the wafer is flat after # 刻

Page 4 567568

degree. If the coil current is unstable, it will be shaped as shown in Figure 2. Results such as drift or even interruption, the flatness around the wafer 2 0 A is not good. ^ 4 下 ΙΐΓ \ This is used in traditional techniques. Let's take a picture of the circuit for measuring the change of the coil current .... External electricity V: Receiving: Circuit diagram of the magnetic field generating device. Do not input to drive unit 3. = Drive current for supply ⑴ ~ 13) It is divided into Bi Bi Li 4 and 30B. The driving currents 11 to 13 are set according to each white light field = 11 μm. When the driving device 30A & 30B receives the driving: two to independent output and supply according to the driving current 11 to 13.

_ Electricity / ;, L Λ, and the coils 32Α ~ 32D generate corresponding magnetic fields according to the current flowing through the respective coils. Hemu green First, in order to detect whether the magnetic field generated by each coil 32a ~ 32D is the same as the pre- $, the traditional technology is to detect the change of the driving current n ~ 13 to check whether the magnetic field produced by ~ 32D is normal. Here, let the respective detection current values of the detection automatic motors 11 to I 3 be 丨〗 i ～ 丨 丨 3. And the conventional technology is to judge whether the detected current values η to 113 are normal; to determine whether the magnetic field generated by the coils 32A to 32D is normal.

However, it is not accurate to judge whether the magnetic field generated by the coils 32A to 32D is normal in the above manner. The reason is as follows: If the drive device 30A or 30b has an error (fai 1) or decay (decade), it will also affect the lack of correctness of the magnetic field generated by the coils 32A to 32D. However, this change does not obviously respond to the lack of current value 111 ~ 11 3. Therefore, the conventional method of judging whether the magnetic field generated by the coils 32A to 32D is correct is not accurate. The test data will be used to explain the traditional way to judge the coil.

0503-6335TWF; TSMC2001-0184; Robert.ptd Page 5 567568 V. Description of the invention (3)

The magnetic field generated by 32A ~ 32D is not the correct test result. Referring to FIGS. 5A to 5e, FIG. 5A shows the current values of the currents 111 to 113 read by the conventional magnetic field generating device when the coil generates a 10 Gauss magnetic field. Fig. 5B shows the current values of the currents 111 to 113 read when the driving devices 30A and 30B of the conventional magnetic field generating device are both in error. Fig. 5C shows the current values of the currents 11 1 to 11 3 read when one of the driving devices 30A and 30B of the conventional magnetic field generating device has an error. The situation shown in Figure 5A is that the magnetic field generated by each coil is normal. At this time, the current values of the currents 111 to 113 are periodically changed steadily. As shown in Fig. 5B, when the drive devices 30A and 30B are both in error, the current values of the currents 111 to 113 are reduced, and they do not show stable periodic changes. Therefore, the conventional technology can clearly detect that the output of the coil magnetic field is abnormal. However, when there is a problem with only one drive, as shown in Figure 5C, the current 丨 丨! The current value of ~ 丨 丨 3 still shows stable periodic changes, and the difference from normal is only that the current level drops slightly, which is usually not detected by traditional magnetic field generating devices.

FIG. 6 is a statistical graph showing the flatness of the wafer produced by the plasma chamber 10 in the magnetic field application provided by the conventional magnetic field generating device. As shown in Fig. 6, for products within the range indicated by reference numeral 60, the flat product = the magnetic field is inaccurate and fails to meet the standard, so it becomes a defective product. However, this field = accurate condition has not been detected by the traditional magnetic field generating device. ♦ The design of the unconventional magnetic field generating device needs to be improved. Provided in view of this, in order to solve the above problems, a magnetic field generating device can accurately debt. The main purpose of the present invention is to measure the output magnetic field error.

567568

In the case of coil detection, the magnetic detection method is suitable for the plasma cavity, and the number is output, and the operation is generated, and the voltage is generated to enter the wrong room. The moving device generates a component to use the electric current to compare the number as an error signal. Interrupt the power supply. The current input from the driving device to the driving device is effective to solve the conventional technology without any magnetic field. In the current method of the present invention, whether the field is correct or not, a single drive is obtained according to the above-mentioned external chamber, including the corresponding current generating magnetic field. Transform signal. When the number required for the wrong magnetic field is different, the error message detection is used as 0 'instead of 〇 In this way, if the device has a problem, the input power line components of the present input. Drive signal. The magnetic field is used to replace the component. When a wrong device is used to preset the voltage signal, a wrong device is output. The device generates a magnetic field to a power signal according to the current signal. The signal is converted to the corresponding voltage signal. Brief description of cavity # scheme: In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below and described in detail with the accompanying drawings as follows: Figure 1 is a schematic block diagram showing a plasma chamber in a conventional etching process. Fig. 2 is a schematic side view showing a plasma chamber of a traditional money-engraving process. FIG. 3 is a schematic side view of a plasma chamber in a conventional etching process. Fig. 4 is a circuit diagram showing a conventional magnetic field generating device. mm 0503-6335TWF; TSMC2001-0184; Robert .ptd Jian 7 hundred 567568

Figure 5A shows the current value of the current 111 ~ 113 read by the conventional magnetic field generating device when the coil generates a 10 Gauss magnetic field. Figure 5B shows the current values of the currents 丨 丨 1 ～ 丨 丨 3 read when the drive devices 3 〇 a and 3 〇 B of the conventional magnetic field generating device are both in error. FIG. 5C shows the current values of the currents 111 to 3 read when one of the driving devices 30a and 30b of the conventional magnetic field generating device has an error. Fig. 6 is a statistical graph showing the flatness of a wafer produced by a conventional magnetic field generating device and applied to a plasma chamber 10 of a post-process plasma chamber. Fig. 7 is a circuit diagram showing a magnetic field generating device according to an embodiment of the present invention. Explanation of symbols: * 1 0 ~ etching process plasma chambers 12, 32A, 32B, 32C, 32D, 72A, 72B, 72C, 72D ~ coil 16 ~ magnetic field direction 18A, 18B ~ plasma 20A, 20B ~ wafer II , I 2, I 3 ~ Drive current

30A, 30B, 70A, 70B ~ drive device III, 11 2, 11 3 ~ detection current value 74A, 74B, 74C, 々4D ~ conversion element 76 ~ error judgment device 761A, 761B, 761C, 761D ~ comparator

0503-6335TWF; TSMC2001-0184; Robert.ptd Page 8 567568 V. Description of the invention (6) 762 ~ relay 78 ~ reference voltage supply device 80 ~ error message detection device embodiment: The following will describe the device according to the embodiment of the present invention. The magnetic field described above generates the components involved. Refer to Fig. 7 '. Fig. 7 is a circuit diagram showing a magnetic field generating device according to an embodiment of the present invention. As shown in FIG. 7, the magnetic field generating device according to the embodiment of the present invention is used to provide a magnetic field around a plasma chamber in an etching process, thereby drawing a plasma and obtaining a better aftereffect. The port driving devices 70A and 70B are used to output corresponding current signals according to the driving currents u ~ 13. The current signal generated by the driving device 70 A is input to the magnetic field generating element (taking coils 72A and 72B as an example); the current signal generated by the driving device 70B is input to the coils 72C and 72D. In the present embodiment, the current signals provided by the driving devices 70A and 70B are determined based on the magnetic fields to be generated by the coils 72A to 72D. The conversion elements 74A and 74B are coupled to the driving device 70A, and the conversion elements 74C and 74D are coupled to the driving device 70B. The conversion elements 74A to 74 ^ are in this embodiment a hole test (h ο 1 e s e n s 〇 r).

Set the current signals provided by 70A and 70B to the corresponding operating voltage signals. " Error judging device 76 includes comparators 761A to 761D and relay 762. The comparators 761 A to 761D are respectively coupled to the corresponding conversion elements 74a to 74D ′ and compare the operating voltages independently output by the conversion elements 74A to 74D.

567568 V. Description of the invention (7) The size of the dust signal and the preset voltage signal. When ... the voltage signal is different, it represents this humble, voltage "number" and the above two, so the comparator will turn out a wrong judgment signal; There is no error in the value of the perch. Therefore, the comparison is not allowed. = At this time, the current supplied to the coil is 2%. = The voltage supply device 78 according to the magnetism of each line.

Value. Next, * comparator 7ΠA ~ 761D ^ i ^ $ ye / out "· Error judgment signal, this error judgment signal will be output to the relay $ 762, at this time the relay 762 will be turned on and the voltage value is an error signal. The most virtuous, good fortune 士 & π & &# 1 敢 后 此 ERROR # is received by the error message detection device 80, and the power supply to the driving devices 70A, 70B is interrupted according to this error signal Signal, and immediately stop the operation of the plasma chamber of the etching process, to avoid the plasma chamber of the etching process to continue to produce products with poor flatness. 0 "According to the embodiment of the present invention, because the current input to the coil by the driving device is generated by the coil The magnetic field has an absolute effect, so by directly detecting the current input to the stem coil of the driving device, it is possible to accurately detect whether there is a problem with the magnetic field generated by the coil, including because a single or all driving devices fail. Or the effect of decay on the output magnetic field. '、 In addition, each comparator 7 61A ~ 7 61 D is connected to relay 7 6 2 in parallel, so' as long as one comparator outputs an error judgment signal, relay 7 6 can be made. 2 Turn on and immediately stop the operation of the plasma chamber in the remaining process. In summary, according to the magnetic field generating device described in the uninvented embodiment, 0503-6335TWF; TSMC200 1-0184; Robert.ptd Page 10 567568 V. Description of the invention (8) ___ Because it can accurately detect the noise used to generate the signal, it can effectively avoid the occurrence of flat sounds around the wafer and abnormal flow. It is disclosed in the preferred embodiment that the above is wonderful, == 幵 ^. The scope of the present invention, any person familiar with this technique is not used to limit the spirit and scope, and can be done; no: after leaving the protection scope of the present invention The attached patent application scope. = 者 = 之 发明 丨 »

0503-6335TWF; TSMC2001-0184; Robert.ptd p. 11

Claims (1)

567568 6. Scope of patent application 1. A magnetic field generating device, suitable for signals and providing a corresponding magnetic field to a plasma chamber x a power source and a driving device input outside, for the purpose of enclosing the current signal according to the above electric power ^ ; / Λ Lbl and output the corresponding electric-magnetic field generating element, which is coupled to the above-mentioned current signal to generate the above-mentioned magnetic field; a boat moving device, which is coupled to the above-mentioned driving signal and converted into the corresponding one according to the previous conversion element. Operating voltage signal; teaching device for coupling the above-mentioned current to an error judging device, coupling the above-mentioned rotation, electric diffuse signal, and generating the above-mentioned magnetic field: two for comparing the above-mentioned operating voltage signal with the above-mentioned preset sigh voltage signal, An error signal; when the voltage is not equal to 4 ，, an error message detection device is output and coupled to the moving device. When the error signal is received, the operation of the plasma chamber is stopped and driven. Disconnect the above power signal 2. The magnetic error detection device as described in item j of the patent application scope includes: a pedestal device, in which a comparator is coupled to the above-mentioned ratchet voltage signal and generates the above-mentioned magnetic: 70 pieces, It is used to compare the above-mentioned operation voltage signal with the above-mentioned pre-voltage signal, when the above-mentioned judgment signal; and when the power is not on, the output-error break r :: appliance 'is coupled to the above-mentioned comparator. When I break the signal, it turns on and outputs the above error signal. Misjudgment 3. The magnetic field generating device described in item 4 of the patent scope of application 4, including 1 page 12 0503-6335TW; TSMC2001-0184; Robert.ptd