TW567398B - The positive resist composition - Google Patents

The positive resist composition Download PDF

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Publication number
TW567398B
TW567398B TW090100838A TW90100838A TW567398B TW 567398 B TW567398 B TW 567398B TW 090100838 A TW090100838 A TW 090100838A TW 90100838 A TW90100838 A TW 90100838A TW 567398 B TW567398 B TW 567398B
Authority
TW
Taiwan
Prior art keywords
resist composition
positive resist
group
present
acid
Prior art date
Application number
TW090100838A
Other languages
Chinese (zh)
Inventor
Kazuyoshi Mizutani
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW567398B publication Critical patent/TW567398B/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention provides a positive resist composition, during producing the semiconductor device, comprising high sensitivity, high resolution, having the square shape, the less etching rough of line pattern, and the size change little while the pattern copy on the layer below in the oxygen plasma etching process. The positive resist composition of the present invention has the characteristics comprising the repeat units having the specific structure, and the high molecular compound of the repeat unit having the group which can acid-decompose to produce the acid radical.

Description

567398 六、申請專利範圍 表示單鍵時A1表示-Q ; A2係表示氫原子、氰基、經 基、-C〇〇H、-C〇〇R，、-C〇-NH-Rn、可，經經基、 •C〇〇H、氰基取代之CV 6院基、可經經基、-C〇〇H、氰基取代之C3_ 10環狀烴基、CV 6烷氧基、 Q或-C〇〇Q(其中，R·、R"係各表示獨立的可經羥 基、-COOH、氰基取代之Ci_ 6烷基烷基）；Q係表示 氫或可以酸分解產生羧酸之基， (III)567398 VI. When the scope of the patent application represents a single bond, A1 represents -Q; A2 represents a hydrogen atom, a cyano group, a mesogen, -C〇〇H, -C〇〇R, -C〇-NH-Rn, may, CV 6-Cycloyl group substituted with a group, • COOH, cyano, C3-10 cyclic hydrocarbon group, CV-6 alkoxy group, Q or -C that can be substituted with a group, -COOH, cyano group 〇〇Q (where R ·, R " each represents an independent Ci-6 alkylalkyl group which may be substituted by a hydroxyl group, -COOH, and a cyano group); Q represents hydrogen or a group capable of acid decomposition to generate a carboxylic acid, ( III)

其中Z係表示氧原子或= N- R3; R3係表示氫原子、 羥基、C丨烷基、-〇-S〇2-R4或以-S〇2-R4中任一個； R4係表示C丨_ 6烷基、三氟甲基；R3、R4總稱之CV 6 烷基可爲直鏈、或支鏈。 2. 如申請專利範圍第2項之正型光阻劑組成物，其中， 一般式（Ila)或（lib)中之Q係爲可以酸分解產生羧酸 之基，且部分含有氫時之總稱。 3. 如申請專利範圍第1項之正型光阻劑組成物，其中含 有相對於感光性樹脂組成物（除去溶劑）1 00重量份 之0.001至10重量分的（D)有機鹼性化合物。 4. 如申請專利範圍第1項之正型光阻劑組成物，其中含 有總光阻劑固體成分之0.001至2重量之（E)界面活 性劑。Wherein Z represents an oxygen atom or = N-R3; R3 represents a hydrogen atom, a hydroxyl group, a C alkyl group, -0-S〇2-R4 or any one of -S〇2-R4; R4 represents C 丨_ 6 alkyl, trifluoromethyl; R3, R4 collectively referred to as CV 6 alkyl may be straight or branched. 2. For example, the positive photoresist composition in the scope of the patent application, wherein Q in the general formula (Ila) or (lib) is a general term for a group that can be decomposed by acid to generate a carboxylic acid, and partially contains hydrogen. . 3. The positive photoresist composition according to item 1 of the patent application range, which contains (D) an organic basic compound in an amount of 0.001 to 10 parts by weight based on 100 parts by weight of the photosensitive resin composition (excluding the solvent). 4. The positive photoresist composition according to item 1 of the patent application scope, which contains (E) a surfactant in an amount of 0.001 to 2% by weight based on the total solid content of the photoresist.

TW090100838A 2000-01-17 2001-01-15 The positive resist composition TW567398B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000008042A JP4105354B2 (en) 2000-01-17 2000-01-17 Positive photoresist composition

Publications (1)

Publication Number Publication Date
TW567398B true TW567398B (en) 2003-12-21

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ID=18536379

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090100838A TW567398B (en) 2000-01-17 2001-01-15 The positive resist composition

Country Status (3)

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JP (1) JP4105354B2 (en)
KR (1) KR100733855B1 (en)
TW (1) TW567398B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4911456B2 (en) * 2006-11-21 2012-04-04 富士フイルム株式会社 POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR POSITIVE PHOTOSENSITIVE COMPOSITION, METHOD FOR PRODUCING THE POLYMER COMPOUND, AND PATTERN FORMATION METHOD USING POSITIVE SENSITIVE COMPOSITION
JP6883954B2 (en) * 2015-06-26 2021-06-09 住友化学株式会社 Resist composition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3804138B2 (en) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 Radiation sensitive resin composition for ArF excimer laser irradiation
JP3865919B2 (en) * 1998-02-03 2007-01-10 富士フイルムホールディングス株式会社 Negative photoresist composition
US6238842B1 (en) * 1998-03-12 2001-05-29 Fuji Photo Film Co., Ltd. Positive photosensitive composition

Also Published As

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JP2001201860A (en) 2001-07-27
KR100733855B1 (en) 2007-06-29
KR20010076302A (en) 2001-08-11
JP4105354B2 (en) 2008-06-25

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