TW563202B - An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and an electronic device containing the same - Google Patents

Abstract

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (\"PECVD\") process is disclosed. Electronic devices containing insulating layer; of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide.

Description

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TECHNICAL FIELD The present invention generally relates to a method for directly manufacturing a sintered quilt with a very low dielectric constant (or ultra-low k) dielectric material and an electronic device including the same. More specifically, the present invention relates to a method and an electronic structure formed by this method, which method produces a thermally stable ultra-low-k film as a very large integrated circuit ("ULSP") back-end process ("BE0L ,," In-layer or inter-layer dielectric in a wire structure. Description of previous techniques In recent years, due to the continuous shrinking of the size of electronic devices in ULSI, the resistance of BEOL metallization and the increase in dielectric capacitance between layers and between layers have increased. The increase of these two values makes the signal delay in ULSI electronic devices worse; in order to improve the switching performance of ULSI circuits in the future, we need an insulating material with a low dielectric constant (^), especially those with a k value much lower than silicon oxide. Substance to reduce its capacitance. There are commercial low-k dielectric materials (ie, dielectrics). Polytetrafluoroethylene ("PTFE") is one of them and has a k value of 20. However, these Chuan Dian materials are not thermally stable at temperatures above 300 ° C to 350 ° C. Integrating these dielectrics in a ULSI chip requires at least 4,000 degrees Celsius. Therefore, these dielectrics are unsuitable for use during integration. Low-k materials that have been considered for use in ULSI devices include polymers containing rock, carbon, and oxygen, such as fluorenylsiloxane, methylsiloxane, and other organic and inorganic polymers. For example, the paper (N. Heck et al. "Properties of a New Low Dielectric Constant Spin-Coated Silicon Oxide Dielectric" Mat. Res. Soc. Symp · Zipc · 4 7 6 (1 9 9 7): 2 The material described in 5) can meet the thermal stability -4-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202

However, some of these materials can cause chipping when the thickness of the thin film produced by the spin coating technology reaches the thickness required in the interconnect structure. In addition, the price of these precursors is very high, which is not enough for mass production. In contrast, most of the manufacturing steps for very large integrated circuits ("vlsi ,," & ulsi) wafers can already be accomplished by plasma enhanced chemical or physical vapor deposition techniques. With easily available manufacturing equipment, Plasma enhanced chemical vapor deposition ("PECVD") technology is used to manufacture low-k materials, which can simplify the integration process of materials, reduce manufacturing costs and reduce waste: = Application (filed on June 19, 1998, patent application Case No. 099/107, 567, named "Hydro-oxidized Carbon Stone Material" describes an ultra-low dielectric constant material composed of silicon, carbon, oxygen and hydrogen atoms, with a dielectric constant not exceeding 3.6 Constant and very low fragmentation propagation speed; here, this case is assigned to the co-assignee of the present invention and is incorporated herein by reference in its entirety. Another co-assignee is assigned to the present invention and The full application of which is incorporated herein by reference (co-applied on May 16, 1999, patent application No. 09 / 320,495, named ... multiphase low dielectric constant material and deposition method ) Described A two-phase material, which is an array composed of silicon, carbon, oxygen, and hydrogen atoms, and a phase mainly composed of carbon and hydrogen atoms, has a dielectric constant not exceeding 3.2. It should be noted that this A material with a lower dielectric constant can further improve the performance of electronic devices containing such a dielectric. Considering the above facts, we still need to develop a dielectric constant that does not exceed about 2.8 and can prevent Fractured Dielectric Material. -5 563202

An overview of the previous month. Therefore, it is an object of the present invention to provide a method for manufacturing an ultra-low dielectric constant material having a dielectric constant not exceeding about 2.8. Preferably, the dielectric constant of the ultra-low material is about 15 to 2.5; more preferably, the dielectric constant of the ultra-low material is about 2 () to 2.25. It should be noted that unless otherwise specified, all dielectric constants are relative to vacuum. Provide a method 'can be produced from a precursor mixture containing at least two precursors; ultra low dielectric constant materials containing carbon, oxygen and hydrogen atoms are another object of the present invention; wherein the first precursor The substance is selected from the group consisting of two COH-knife-shaped molecules having a ring structure, and the second precursor is an organic molecule having a ring structure. "Providing a method for making ultra-low dielectric constant films in a parallel-plate plasma enhanced chemical vapor deposition (PECVD) reactor is another object of the present invention. Providing a method for making The resulting ultra-low dielectric constant material is another object of the present invention as an intra-layer or inter-layer dielectric in an electronic structure back-end process ("BEOL") interconnect structure. Stable ultra-low dielectric constant materials with internal stress and dielectric constant not exceeding about 28 are another object of the present invention. Preferably, the dielectric constant of the ultra-low-k material is about 15 to 2 5; more Preferably, the dielectric constant of the ultra-low-k material is about 20 to 2.25. An electronic junction is provided, which incorporates a layer of insulating material as a layer in its subsequent t-way ("BEOL") wire structure. Or interlayer dielectric, at least shoulder -6- This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) im ---- binding

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The two insulating material layers contain another object of the ultra-low dielectric constant material of the present invention. ^ Provides an electronic structure, in addition to having the ultra-low dielectric constant material of the present invention as the ^ in the subsequent process ("BEOL") wire structure in the layer or interlayer dielectric layer layout layer, It still contains at least one dielectric capping layer as a secondary I * etching (RIE) mask for polishing stop or diffusion barrier; it is another object of the present invention.-Provide an improved method in C02 Or in the presence of Co2 and O2, an ultra-low dielectric constant material is manufactured by depositing a thin film on a substrate, thereby improving the uniformity of the deposited thin film and the stability of the plasma in the PECVD reactor. Another object of the present invention is to provide a method for manufacturing a thermally stable dielectric material. The material has an array of silicon, carbon, oxygen, and hydrogen atoms and nano-pores of multiple atom sizes. In a preferred embodiment, the dielectric material has an array consisting essentially of silicon, carbon, oxygen, and hydrogen. The present invention also provides a method for plasma enhanced chemical vapor deposition ("PEC vd") The reactor will contain silicon, carbon, and oxygen And a hydrogen atom, a first precursor gas and a second precursor gas containing at least carbon and hydrogen (optionally containing 0, F & N) are added / tonified 'to produce the dielectric material. The present invention also provides a dielectric material. An electronic structure (ie, a substrate) having an insulating material layer as a dielectric layer in or between layers in a back-end process ("BEOL") wire structure, wherein the insulating material in the insulating material layer may be the ultra-low k of the present invention. Film. In the present invention, C02 is mixed into the first precursor gas, or C02 and 〇2 are mixed into the first and the paper size. The Chinese National Standard (CNS) A4 specification (210X 297 mm) is used for binding.

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The second precursor gas stabilizes the stability of the electrical equipment in the PECVD reactor and improves the uniformity of the thin film deposited on the substrate. In another preferred embodiment, a method for manufacturing a thermally stable ultra-low dielectric constant (ultra-low k) film is provided. The method includes the steps of providing a plasma-based strong chemical vapor deposition ("PECVD" ,,) reaction furnace; -f substructure (ie ^ plate) is placed in the reaction furnace; will contain Shi Xi, carbon, oxygen, hydrogen atom number:, driving gas into the reaction furnace; will contain A second precursor mixed gas containing carbon, hydrogen (optionally aerobic F, N) atoms is passed into the reaction furnace; finally, an ultra-thin film is deposited on the substrate. Preferably, the first precursor is Selected from cyclic molecules containing sic0H components, such as u, 5,7 • tetramethylcyclotetrasiloxane ("TMCTS" or qHwCUSi4). The second precursor may be composed of a cyclic structure molecule The organic 7-knife selected from the group is preferably more than one ring. Particularly useful is a type containing a slightly closed ring, at least one containing a heteroatom (preferably oxygen). The most suitable Is the type whose ring size can clearly transmit ring tension, that is, a ring has 3 or 4 atoms and / or 7 or more atomic species. Particularly attractive species are members of the oxabicyclic compound class, such as epoxycyclopentene ("CPO" or "C5H80,"). Alternatively, may The film deposited by the present invention is heated at a temperature of not more than about 300 degrees Celsius for at least about 025 hours. The method further includes step s' provided-a parallel plate reaction furnace, the substrate chuck dysfunction = about 300 To 700 cm2, the distance from the substrate to the top electrode is about 1 cm to 10 cm. High-frequency RF power is supplied to one of the electrodes, and the frequency is between 12 MHz and 15 million Hz. By nature, -8-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding

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Can send another low-frequency power to one of the electrodes. The heating temperature used in the first heating time section of the heating step does not exceed about 300 degrees Celsius, and the heating temperature in the subsequent second heating time section does not exceed about 380 degrees Celsius; the length of the second heating time Should be longer than this first heating time. The length of the second heating day between the temples is at least about ten times longer than the first force. The deposition step of the ultra-low-dielectric-constant thin film of the present invention in thermal time further includes the following steps: Set the substrate temperature to about 25 ° C to 400 ° C; set the RF power density at the same frequency to about 1 cm2 0.005 watts to about 2.0 watts per square centimeter; the flow rate of the first precursor is set to about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute; the flow rate of the second precursor Set to about 5 standard cubic centimeters per minute to about 1,000 cubic centimeters per minute; set the pressure of the reactor between about 50 mTorr and about 5000 mTorr; and set the high frequency RF power at about i 5 Watts to about 500 watts. Optionally, an ultra-low frequency power of about 10 watts to about 300 watts can be fed into the plasma. When the conductive area of the substrate chuck changes by a factor of x, the RF power sent to the substrate chuck also changes by a factor of x. A method for manufacturing an ultra-low-k thin film provided by another preferred embodiment includes the following steps. A parallel-plate-type plasma-enhanced chemical vapor phase reactor is provided, and the pre-treatment is performed. The wafer is placed on a substrate chuck with a conductive area of about 300 to 700 cm 2 and the gap between the wafer and the top electrode is maintained at about 1 to 10 cm; A first precursor gas is passed into the reaction furnace; at least a second precursor gas is passed, the gas contains organic molecules having a ring structure of carbon, hydrogen, and oxygen atoms; in the crystal-9- this paper size applies Chinese national standards ( CNS) A4 size (210 X 297 mm) binding

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Circle ^ = an ultra-low-k film is accumulated. After this deposition step, a heating step for the film may be added: heating to a temperature of not more than about 3G0 degrees Celsius; about 0.25 pick-up hours. It may further include the step of adding RF power to the wafer. The heating step may be further divided into a first heating time and a second heating time. The heating temperature used in the first heating time section does not exceed about The heating temperature in a heating time section does not exceed about 380 degrees Celsius; the length of the second heating time should be greater than the first heating time. The length of the first heating time is at least about ten times the length of the first heating time. The cyclosiloxane precursor used may be tetramethylcyclotetrasiloxane (TMCTS), and the organic precursor may be Epoxycyclopentene ("CPO"). The ultra-low-k thin film deposition step may further include the following steps: setting the temperature of the wafer to about 25 degrees to 400 degrees Celsius; setting the RF power density to about 0.05 Watts per square centimeter to about 20 watts per square centimeter; set the flow rate of the cyclosiloxane to about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute; set the flow rate of the organic precursor to about 5 standard cubic centimeters per minute to about 10,000 cubic centimeters per minute; and set the pressure of the reactor to between about 500 mTorr and about 5000 mTorr. In addition, the deposition step may further include setting a flow ratio of epoxycyclopentene to tetrafluorenylcyclotetrasiloxane to about 0.1 to about 0.7, and preferably between 0.2 to 0.4. . When the conductive area of the substrate chuck is changed by a factor of ，, the RF power sent to the substrate chuck must also be changed by a factor of X. In another specific embodiment, a method for manufacturing a thermally stable super-dielectric film is provided, which includes the following steps: a parallel plate type of -10- is provided. The paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) Staple

Line 563202 A7 B7 V. Description of the invention (8) Electron enhanced chemical vapor deposition reactor; Place the pre-processed wafer on a substrate chuck with a conductive area of approximately 300 to 700 cm2, and place the The gap between the wafer and the top electrode is maintained at about 丨 cm to about 10 cm; a ring silicon oxide precursor precursor gas mixture with ring-shaped organic molecules is passed into the reactor above the wafer, and the temperature is maintained at about 6 ° C. Degrees to about 200 degrees Celsius' total flow rate maintained at about 25 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute, and the pressure of the reactor was maintained at about 100 mTorr to about 5000 mTorr; at RF power The density is approximately 0.25 watts per square centimeter to 0.8 watts per square centimeter, and a dielectric thin film is deposited on the wafer; and the ultra-low-k film is formed at a temperature not exceeding about 300 degrees Celsius. Temper for at least about 0.25 hours. The method of the present invention further includes a two-stage tempering step. The temperature used during the first tempering time is not higher than about 300 degrees Celsius, and the temperature used after the second tempering time is not lower than about 380 degrees Celsius. , Where the length of the second time should be greater than the first time. The length of the second time is at least about ten times longer than the length of the first time. The cyclosiloxane precursor may be tetramethylcyclotetrasiloxane ("TMCTS"), and the organic precursor may be epoxycyclopentene ("CPO"). The present invention relates to another electronic structure which uses an insulating material as a dielectric in or between layers in a back-end process ("BEOL") interconnect structure. The interconnect structure includes a pre-processed semi-conductive substrate having A first metal region, a first conductor region, and a second conductor region, the first metal region is embedded in a first insulating layer, and the first conductor region is embedded in an ultra-low 1 ^ dielectric material made by the present invention; In the formed second insulation layer, the ultra-low-k dielectric contains silicon, carbon, oxygen, hydrogen, and many nanometer-sized pores, and the dielectric constant does not exceed about -11-This paper is compliant with China National Standards (CNS) A4 size (210 X 297 mm)

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2 · 8 'The second insulating layer is in close contact with the first insulating layer, the first conductor region is electrically connected to the first metal region, and the second conductor region is embedded in the ultra-low-k dielectric containing the present invention The third insulating layer of insulating material is electrically connected to the first conductor region, and the third insulating material f layer is in close contact with the second insulating material layer. The electronic structure further includes a dielectric capping layer between the second insulating material layer and the third insulating material layer. f Hai electronic structure further includes a first dielectric cap layer between the second insulating material layer and the third insulating material layer, and further includes a second dielectric cap layer on the third insulating material layer. . The material of the dielectric cover can be selected from the following materials: silicon oxide, silicon nitride, silicon oxynitride, refractory silicon nitride metal (where the refractory metal is selected from the group consisting of buttons, rhenium, thorium, tungsten ) Silicon carbides, carbon-doped oxides or SiCOH and their hydrogenated compounds. The first and second interface cap layers may be selected from the same group of dielectric materials. The material of the first insulating layer may be oxidized silicon oxide or silicon nitride, or various dopants of these materials, such as plate glass (“PSG”) or borophosphosilicate glass (“BPSG”). The electronic structure may further include a diffusion barrier layer made of a dielectric material, and deposited on at least one of the second and third insulating material layers. The electronic structure may further include a dielectric layer on top of the second insulating material layer as a hard mask and a polishing stop layer for active ion etching ("RIE,"), and a hard mask on the dielectric RIE. A dielectric diffusion barrier layer is formed on the grinding stop layer of the cover friend. The electronic structure may further include a first dielectric RIE hard mask / grind stop layer on the second insulating material layer. A dielectric polishing-stop layer further includes a first dielectric RIE hard mask / diffusion barrier layer, and a third dielectric material layer further includes a second dielectric RIE hard mask / grinding stop. Layer, and -12 of the second dielectric grinding-resisting layer-this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm)

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I = 6 is an enlarged cross-sectional view of the electronic device of the present invention. The inner dielectric layer and the interlayer dielectric layer are made of the ultra-low-k material of the present invention. Fig. 7 is an enlarged cross-sectional view of the electronic structure of the ultra-low-k material film of Fig. 2 after a dielectric barrier layer of a diffusion barrier is added. FIG. 8 is an enlarged cross-sectional view of the electronic structure after adding a hard mask / grind stop dielectric cover layer and a diffusion barrier of the dielectric cover to the abrasive stop layer of FIG. 3 according to the present invention.

Fig. 9 is an enlarged cross-sectional view of the electronic structure after adding an RIE hard mask / grinding blocking dielectric layer to the interlayer ultra-low-quality film of Fig. 4 according to the present invention. Binding

A detailed description of a preferred embodiment of the ash invention: "The present invention discloses a method for manufacturing a thermally stable ultra-low dielectric constant film in a parallel plate plasma enhanced chemical vapor deposition (" PEC VD ") reactor. The material disclosed in the preferred embodiment includes a carbon-silicon-silicon (SiCOH) array containing hydroxide. The material includes silicon, carbon, oxygen, hydrogen covalently bonded into a network, and a dielectric having no more than about 2.8. The electric constant, which also contains some molecular-sized voids, has a diameter of about 0.5 to 20 nanometers, which further reduces the dielectric constant to less than about 2.0. Preferably, the ultra-low-k film The dielectric constant is in the range of about 1.5 to about 2.5, and most preferably, the dielectric constant is in the range of about 2.0 to about 2.25. In order to manufacture ultra-low-k thermally stable films, specific growth conditions are required And a special-shaped deposition reactor. For example, in a parallel plate reactor, the conductive area of the substrate chuck should be between about 300 square centimeters and about 700 square centimeters, and the gap between the substrate and the top electrode is about 1 Cm to 10 cm left The power supplied to the RF-14

5. Description of the invention (12) board. According to the present invention, the ultra-low dielectric constant: under a specific reaction condition in a reaction furnace, the membrane is a ™ CTS with a specific shape and a second precursor (for a precursor with oxygen = like oxygen) It is formed in a mixture of cyclopentene). The degree of the sub-images is about 300 ° C and less than about 300 ° C. In addition, the degree of dielectricity of the low dielectric f of the present invention is as thin as m to hours to reduce Dielectric constant. In the case of 埶 *…, among others, it is derived from lean gas and tritium gas (or mixed gas), including carbon, molecular fragments of wind, milk, or milk atom, and decomposition. It is converted into smaller molecules and released in the membrane. Optionally, the conversion and release of the molecules ^ f can be used to create holes in the film. The density of radon is thus reduced. The present invention provides A method for preparing an ultra-low dielectric constant (i.e., less than about 2 8) 此种. This material is suitable for integration in a conductor structure. Preferably, the dielectric constant of the ultra-low-k film of the present invention is about丨 5 to about 25, most preferably about 2.0 to about 225 The electric constant. The film of the present invention can be prepared by selecting two or more suitable precursors and combining them with specific processing parameters as described below. Preferably, the first precursor is selected from the group consisting of a ring having a SiCOH component Structural molecules, such as tetramethylcyclotetrasiloxane (TMCTS or C4H 丨 604Si4) or octamethylcyclotetrasiloxane (0MCTS or C8H2404Si4). More generally, the first precursor is Cycloalkyltetrasiloxane grades containing a ring structure, including equal numbers of silicon and oxygen atoms bonded in an alternating manner, and at least one of the silicon atoms covalently bonded to an alkyl group (such as fluorenyl, ethyl , Propyl or higher branched analogues' and cyclohydrocarbons like cyclopropyl, cyclopentyl, cyclohexyl or even southerly analogs), all silicon atoms are connected by two alkyl groups Circumstances -15- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 563202

The gap z is approximately 1 inch, and the evacuation of the reactor 10 is performed through the 3-inch exhaust port 18. The RF power 20 is connected to the gDP 16, which is insulated from the anti-bank, and the substrate chuck 12 is grounded. For practical purposes, the objects in the reactor are grounded. In different embodiments, RF power 20 can be connected to the substrate chuck 12 and transmitted to the substrate 22. If so, the substrate can obtain a negative bias voltage, which depends on the shape of the reactor and the plasma parameters. In another embodiment, more than one power supply may be used. For example, two power supplies operating at the same RF frequency may be used, or one operating at a low frequency 'and one operating at a high frequency. These two I source suppliers can be connected to the same electrode, or can be connected to different electrodes respectively. In another embodiment, the power supplied by the RF power supply during the deposition may be in the form of chirped pulses. Variables to be controlled when depositing a low-k film include the mixing and flow rate of the RF power 'precursor, the pressure in the reaction furnace, and the substrate temperature. The surface 24 of the reaction furnace 10 is coated with an insulating material. For example, the reaction furnace 24 may be coated with a certain type of paint of a certain mil thickness. The substrate chuck 12 may use another type of coating, such as a thin layer of oxide chain or an insulator f which is resistant to electrical polyoxygen. Control the temperature of the substrate by heating the wafer out of control. According to the present invention, the ultra-low yield material prepared using appropriate first and second precursors and a specific combination of processing parameters as described above preferably contains, from about 5 to about 40 atomic percent silicon; from about 5 to about 45 atomic percent ": about 0 to about 50 atomic percent oxygen; and about 55 atomic percent of hydrogen.

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563202 A7 —- ______B7__ 5. Description of the invention (16) '' The main variables to be controlled during the film deposition process are: RF power, the flow rate of these precursors, reactor pressure, and substrate temperature. The following provides several examples of depositing a thin film according to the present invention from a first precursor tetramethylcyclotetrasiloxane (TMCTS) and a second precursor epoxy cyclopentene ("cp0"). These examples use He as the carrier gas to transport TMCTS precursor vapor into the reactor. Optionally, after deposition, the film is heated at 400 ° C to reduce the k value. It should be emphasized that the manufacturing method of the present invention is only applicable to a deposition reactor having a specific growth condition and a specific shape. If the reactors with different shapes are used under the defined growth conditions ^, the manufactured films may not reach the required ultra-low dielectric constant. For example, the substrate chuck area of the parallel plate oven of the present invention should be between about 300 square centimeters and about 700 square centimeters, and preferably between about 500 square centimeters and about 600 square centimeters. 〇 square centimeters. The distance between the base plate and the gas diffusion plate (or top electrode) is about 1 cm to about 10 cm, and preferably about 15 cm to about 7 cm. The frequency of the RF power delivered to one of the electrodes is between about 12 MHz and about 5 MHz, and preferably about 13.56 MHz. Optionally, a low frequency below megahertz can be sent to the same electrode as RF power, or at a power density of 0 to 03 watts per square centimeter to the opposite electrode. The deposition conditions used are also critical to the success of the deposition process. For example, the wafer temperature should be between about 25 ° C and about 325 ° C, and preferably between about 60 ° C and about 200 ° C. RF power density ranges from approximately 0.55 watts per square centimeter to approximately 0.5 watts per square centimeter, and most

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Line -19- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 Five A7 B7, Invention Description (17) It is preferably about 0.25 watts per square centimeter to about 0.8 watts per square centimeter. The flow rate of the reaction gas TMCTS is about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute, and preferably about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute. The flow rate of the reaction gas CPO is about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute, and preferably about 10 standard cubic centimeters per minute to about 120 standard cubic centimeters per minute. The reactor pressure during the deposition process is then between about 50 mTorr and about 5000 mTorr, and preferably between about 100 mTorr and about 3000 mTorr. In addition, the total reaction gas flow rate of TMCTS-C02 (where C02 is used as a carrier gas) is approximately 25 standard cubic centimeters per minute to approximately 1,000 standard cubic centimeters per minute, and the flow rates of the mixed gas of C02 and 02 are C02: about 25 standard cubic centimeters per minute to 1000 standard cubic centimeters per minute, 02: about 0.5 standard cubic centimeters per minute to 50 standard cubic centimeters per minute, and the flow rate of C02 is about 15 per minute Standard cubic centimeters to about 1000 standard cubic centimeters per minute. The total reaction gas flow rate of TMCTS-C02 (where C02 is used as a carrier gas) is preferably about 50 standard cubic centimeters per minute to 500 standard cubic centimeters per minute. (: The flow rate of 02 and 02 mixed gas is preferably C02: about 50 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute, 02: about 1 standard cubic centimeter per minute to about 3 per minute. Standard cubic centimeters, and the flow rate of C02 is about 50 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute. The reactor pressure during the deposition process is about 5,0 mTorr to about 5000 mTorr, preferably at 100 mTorr to approximately 3000 mTorr. -20- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) binding

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It should be noted that if the area of the substrate chuck is doubled, that is, the range of its area value is changed from about 300 cm 2 to about 700 cm 2, the radio frequency power is also changed to X times. Similarly, if the area of the substrate chuck becomes Y times and the distance between the gas diffusion plate and the substrate chuck becomes two times, the gas flow rate will be ϋYZ times the original. # 使 料 是 &台; Deposition reaction furnace, the area of the substrate is attributed to the individual substrate chuck, and the flow rate of the gas is attributed to the individual deposition platform. Therefore, the total flow rate and total power input to the reactor need to be multiplied by the total number of deposition platforms in the reactor. The deposited film must be stabilized before undergoing further integration. This stabilization treatment can be performed in a furnace annealing at a temperature of about 3 ° C to about 400 ° C for about 0.5 hours to about 4 hours. This stabilization process can also be performed at a temperature higher than 300 ° C in a rapid thermal tempering manner. The dielectric constant of the thin film obtained according to the present invention may be lower than about 2.8. The thermal stability of the film of the present invention in a non-oxidizing environment can reach about 400 degrees Celsius. An electronic device formed according to the present invention is shown in Figs. 6-9. It should be noted that the devices shown in Figs. 6-9 are only illustrative examples of the present invention, and countless other devices can also be manufactured according to the present invention. FIG. 6 illustrates an electronic device 30 built on a silicon substrate 32. The insulating material layer 34 is formed on the Shixi substrate 32, and the first metal region% is embedded therein. After a chemical mechanical polishing ("CMP") process is performed on the first metal region 36, a film such as an ultra-low-k film 38 is deposited on the first insulating material layer 34 and the first metal region 36. The first insulating material layer 34 may be made of silicon oxide, nitride nitride, or a doped variant of these materials, or any other suitable insulation -21-This paper size applies to the Chinese National Standard (CNS) A4 specification (21〇χ 297 (Mm)

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Thread, invention description (19 formed by edge material 。. lithography etched 爯 甘 甘 甘 次 次 甘 the low-k film 38 is patterned, and then a conductor layer 40 is deposited in it, after processing, and then The plasma-enhanced body layer 40 has been subjected to CMP, and the second ultra-low-k thin film layer 44 has been subjected to the emulsion phase redundancy ("PECVD") method. The body layer can be made of metallic conductive materials to immerse non-metallic materials. Conductive materials. For example,,, or, non-metallic materials such as nitrides or polycrystallines: are electrically connected to the first metal region 36. The second conductive layer 40f performs the second ultra-low-k thin film layer 44 Lithography, and then ~ After the step of depositing the bulk material, the first-Ding ’s secret secretary-the conductor area 50 is formed in the base. The-= 5 = can be used to sink metal or non-metal materials: body The situation is similar to electrical connection = the first; the conductor region 40 and the k-thin film layer embedded in the second ultra-low-k insulating layer 44 are close to the first-ultra-low-insulation material layer 3. In this particular example, the An insulating material layer 38 (which is the ultra-low-k material of the present invention) is used as the dielectric material in the layer, and the second insulation The low-k film, ie, the ultra-low-k thin film 44, acts as a dielectric within and between layers. Since the ultra-low-k film has a low dielectric constant, the first insulating layer 38 and the second insulating layer 44 may have better properties. FIG. 7 depicts the electronic device 60 of the present invention, which is similar to the electronic device 30 shown in FIG. 6 but with a dielectric cover layer 62 deposited on the first insulating material layer 38 and Between the second insulating material layers 44. The dielectric cap layer & can be formed with a suitable material, such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbide (SiCO), ultra-low correction k and their hydrogenated compounds, and refractory silicon nitride metal (where the refractory metal is selected from -22- this paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm) 563202) V. Invention Explanation (20: Tungsten). The additional dielectric cap layer 62 is a diffusion barrier layer, "the conductor layer 4G diffuses to the second insulating material layer 44, or to a lower layout layer, especially layer 34. And 32. What I will discuss is another alternative to the embodiment 70 of the electronic device of the present invention. 'In the device 70, two additional dielectric cap layers 72 and 74 are used as RIE masks and CMP (Chemical Mechanical Polishing) polishing stop layers. The first interface cover layer 72 is the first layer of insulation Above the material layer 38. The function of the "dielectric layer" is to provide a CMP process endpoint for the CMP process used to planarize the first conductor layer 40. The polishing stop layer 72 can be deposited with a suitable dielectric material, such as Silicon oxide, silicon nitride, silicon oxide, silicon carbide, silicon carbon 'compounds (SiCO), modified ultra-low-k and their hydrogenated compounds, and refractory silicon nitride metals (of which the refractory metal is selected From buttons, osmium, thorium, tungsten). The upper surface of the dielectric layer 72 is level with the upper surface of the first conductor layer 40. A second dielectric layer 74 may be added on top of the second insulating material layer 44 for the same purpose as that of the dielectric layer 72. FIG. 9 illustrates another alternative embodiment 80 of the electronic device of the present invention. In this alternative embodiment, another dielectric layer 82 is deposited, and the second insulating material layer 44 is divided into two layers 84 and 86. The inter-layer and inter-layer dielectric layers 44 depicted in FIG. 8 are thus divided and split into the inter-layer dielectric layer 84 and the inter-layer dielectric layer 86 at the boundaries of the interconnects 92 and 94, as shown in FIG. A diffusion barrier layer 96 is deposited on the upper dielectric layer 74. An additional benefit that this alternative embodiment electronic structure 80 can provide is that the RIE etch stop role played by the dielectric layer 82 has a superior interconnect depth control capability. -23- This paper size applies to China National Standard (CNS) A4 (210X297 mm) binding

563202

The example presented below illustrates the manufacturing method of the ultra-low W electric thin mold of the present invention 'and shows the benefits obtained thereby. Example 1 In this example, according to FIG. 3, first, a wafer is placed in a reactor 10 through a long valve 14, and then engraved with argon. During the preparation of this wafer, the temperature of the wafer was about 180 degrees Celsius, and the flow rate of argon was about 25 standard cubic centimeters per minute to bring the pressure to about 100 mTorr. Then turn the RF power on 'to about i25 watts for about 60 seconds. The radio frequency power and argon were then turned off. With He as the carrier gas, the TMCTS precursor was loaded into the reactor. ... the pressure into the TMCTS trough is about 5 psig. The ultra-low-k film of the present invention can be deposited by setting the flow rate and pressure of TMCTS + He and CPO at about TMCTS + He · 20 standard cubic centimeters per minute, CPO: 6 standard cubic centimeters per minute, and about 10 〇mtor. The RF power was then turned on to about 15 watts for about 50 minutes. Then turn off the RF power and airflow. Remove the wafer from the reactor 10. In order to reduce the dielectric constant of the deposited films and to improve their thermal stability (that is, to make them stable at temperatures greater than 300 degrees Celsius), the films may be subjected to tempering after they are accepted, so that The volatile substances evaporate and stabilize the film comprehensively. This post-tempering treatment can be performed in a tempering furnace by the following steps. Nitrogen was first passed in at a rate of about 10 liters per minute, and the tempering furnace was cleaned for about 5 minutes (the film samples were placed on a stage). The film samples were then transferred to a reaction furnace, and the post-tempering step was started: the heating rate was about 5 degrees Celsius per minute to about 280 degrees Celsius, and the temperature was -24-this paper scale applies Chinese national standards ( CNS) Α4 size (210 X 297 mm)

Η

563202 A7 B7 V. Description of the invention (22) The temperature is maintained at about 280 degrees Celsius for about 5 minutes, and then it is heated to about 400 degrees Celsius at a first heating rate of about 5 degrees Celsius per minute, and the temperature is maintained at At about 400 ° C for about 4 hours, the furnace fire was turned off and the film samples were cooled to about 100 ° C or below. The suitable insulation range for the first insulation action is approximately 280 ° C to 300 ° C, and the appropriate insulation range for the second insulation action is to maintain the temperature at approximately 300 ° C to 400 ° C. The results of the first specific embodiment will now be discussed in Figs. Figure 4 is a Fourier transformed infrared ("FTIR") spectrum of a standard SiCOH film. The spectrum tells us that the wavelength range of about 1000-1 to 100 cm · 1 is Si—0—a very strong absorption band, the absorption peak of Si-CH3 is about 1275 cm-1, and the absorption band of Si-H is about At 2150-2250 cnT1, the peak of small CH absorption is about 2900-3 000 cm-1. The relative intensities of the CH, SiH and SiCH3 peaks compared to the SiO peaks of the SiCOH film are shown in Table 1. Figure 5 shows the FTIR spectrum of an ultra-low-k film prepared from a mixture of (TMCTS + He) + CPO according to the present invention. This spectrum shows the spectra of sbO, Si-CH3, and C-fluorene absorption peaks, as shown in Fig. 4. However, there is no 8 absorption peak in this figure, and the intensity of the ultra-low-k film with an absorption band of about 2900-3000 (: 111-1 is also much greater than that of the siCOH film shown in FIG. 4 The strength of the ultra-low-k film. The relative intensities of the CH and SiCH3 peaks compared to the Si0 peak of this film are also shown in Table i. As specifically illustrated in Table 1, the integrated region of the CH peak of the ultra-low-k film is 40% of the peak of s i-CH3, and only 2% of the peak of Si-CH3 in the 疋 SiCOH film. It is clear that the ultra-low-k thin film contains a considerable degree of in addition to the SiCOH phase. Yes CHx -25- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202 A7 B7 V. Description of the invention (23) ^ (hydrocarbon) phase amount. FTIR of this ultra-low-k film Another feature of the spectrum is that the Si-O peak is split into two peaks, about i139 cm · 1 and 1056 cm.1, which can be seen in Figure 5. Material CH / SiO (〇 / 〇) SiH / SiO (%) SiCH / SiO r%) SiCOH 2 7 5 ultra-low k 10 0 4 Example 2 Table 1 Relative intensity of FTIR absorption peaks The wafer in this example was also prepared as described in Example 1, but the crystal The temperature of the circle is set At about 300 degrees Celsius. Then use He as the carrier gas to send the TMCTS precursor into the reactor; the pressure when He flows into the MCTS container is about 5 psig. The ultra-low-k film of the present invention can be deposited by: The flow and pressure of TMCTS + He and CPO are set at about TMCTS + He: 150 standard cubic centimeters per minute, CPO: 50 standard cubic centimeters per minute, and about 2000 mTorr. Then turn on the RF power and adjust to about 150 watts Keep it for about 10 minutes. Then turn off the RF power and air flow. Remove the wafer from the reactor 10 and temper it by the method described in Example 1. Example 3 The reactor used in this example contains 6 Deposition stations. The temperature of the wafer chuck is set at about 350 ° C. Using a liquid transfer system, the TMCTS precursor is loaded into the reactor at a rate of approximately 5 mg per minute, and the flow rate of this CPO is approximately per minute. 900 standard cubic centimeters, and the pressure is stable at about 3000 mTorr. The total RF power sent to the reactor is about 600 watts, and the low-frequency power is about 300 watts. The wafer is accepted on the deposition table for a predetermined time After the deposition, Move to the next deposition station and accept it at each deposition station in this way. -26- This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 A7 B7 V. Description of the invention (24) 'Finally, the ultra-low-k film was deposited. The wafer is removed from the reactor after passing the last deposition $, and is subjected to the tempering procedure described in Example 丨. The plasma in the example is operated in continuous mode. The plasma in Example 4 below is operated in pulse mode. Example 4 In this example, the execution condition of the child product is similar to Example 1, except that the plasma is operated in the pulse $ mode, that is, the duty cycle is about 50%, and the plasma is turned on.

About 疋 from 50¾ seconds to 100 亳 seconds. After removing the wafer from the reaction furnace 10, P will send the existing X film to the wafer to receive the tempering procedure as described in Example 1. As mentioned in the above examples, the prepared thin film has a dielectric constant ranging from about 2.0 to 2.25. Order

Rapid thermal tempering ("RTA") processing can also be used to stabilize ultra-low dagger films. The dielectric constant M of the thin film obtained according to the present invention is about 2 · 8, which is also thermally stable during the integration stage in the later stage ("BEOL,") interconnect structure, and the temperature during the integration process It can usually reach degrees Celsius. Therefore, the matters taught by the present invention can also be easily modified to produce thin films of inter-layer and inter-layer dielectrics which are used as logic and memory in the subsequent process. Heart, the method of the present invention, and the formation thereof The electronic structure is fully shown in the above description and the attached figure ^. It should be emphasized that the example of the electronic structure shown in Figure 6_9 is only used to illustrate the method of the present invention, this method is applicable In the manufacture of most electronic devices. ~ Example 5 -27-

563202

In this example, according to FIG. 3, first, the wafer is placed in the reactor 10 through the long valve 14 'and then pre-etched with argon. During the preparation of this wafer, the temperature of the wafer was about 180 degrees Celsius, and the flow rate of argon was about 25 "quasi-cubic centimeters per minute, so that the pressure reached about 1 ⑽mTorr. Then the RF power was turned on. Adjust it to about 125 watts and maintain it for about 60 seconds. Then turn off the RF power and argon. Use c02 as the carrier gas to load the drive into the reactor. Pressure when c02 flows into the MCTS valley It is about 5 psig. The ultra-low-k film of the present invention can be deposited by setting the flow rate and pressure of TMCTS + c0 and cp0 at about TMCTS + C02: 20 standard cubic centimeters per minute, cp0: 10 standard cubic centimeters per minute, and about 100 millitorr. The RF power was then turned on, adjusted to about 15 watts, and maintained for about 50 minutes. The RF power and air flow were then turned off. The wafer was removed from the reactor. In order to reduce the dielectric constant of the deposited films and improve their thermal stability (that is, to 'make them stable at temperatures greater than 300 degrees Celsius), the films may be subjected to post-tempering treatment to make them The volatile substances inside evaporate, The film is surface-stabilized. The post-tempering treatment can be performed in the tempering furnace according to the following steps. First, nitrogen gas is passed in at a rate of about 10 liters per minute, and the tempering furnace is cleaned for about 5 minutes (the film samples are placed in On the stage). Then transfer the film samples to the reaction furnace and start the post-tempering step: heat up to about 28 ° C with a heating rate of about 5 ° C per minute and keep the temperature at about 2 ° C 80 degrees for about 5 minutes, and then heat it to about 400 degrees Celsius at a first heating rate of about 5 degrees Celsius per minute, and then maintain the temperature at about 400 degrees Celsius for about 4 hours, and finally turn the furnace off and let Samples of these films-28- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 A7 B7 V. Description of the invention (26) ^ ~ Cool to about 100 degrees Celsius or below. First heat preservation The suitable insulation range for the action is approximately 280 ° C to 300 ° C, and the suitable insulation range for the second insulation action is approximately 300 ° C to 400 ° C. Example 6 The wafer in this example is also described in Example 5. Prepared, but The temperature of the circle is set at about 300 degrees Celsius. The TmC TS precursor is then sent into the reactor using CO2 as the carrier gas; the pressure when CO2 flows into the TMCTS container is about 5 psig. Ultra-low-k thin film can be deposited by setting the flow rate and pressure of TMCTS + C02 and CPO to about MCTS + c02: 150 standard cubic centimeters per minute, CPO: 75 standard cubic centimeters per minute, and about 20 0 0 home care. The RF power was then turned on, adjusted to about 1 $ 0 watts, and maintained for about 10 minutes. The RF power and air flow were then turned off. The wafer was removed from the reaction furnace 10 and tempered in the manner described in Example 5. The plasma in the previous example was operated in continuous mode. The plasma in Example 7 below is operated in pulse mode. Example 7 The execution conditions of the deposition in this example are similar to Example 5, except that the plasma is operated in pulse mode, that is, the duty cycle is about 50%, and the turn-on time of the plasma is about 50 milliseconds to 100 milliseconds. . After the wafer is removed from the reaction furnace 10, the wafer on which the existing thin film is deposited is sent to a tempering process as described in Example 5. Example 8 The reactor used in this example contains 6 deposition stations. The temperature of the wafer chuck is set at about 350 degrees Celsius. Use a liquid delivery system at a price of approximately $ m-29-I paper standard SS Home Standard (CNS) A4 specification (21GX tear public love) 563202 A7 —______ B7 V. Description of the invention (27) The flow of liters will drive the TMCTS precursor The material is loaded into the reaction furnace, the flow rate of the cp0 is about 250 standard cubic centimeters per minute and clock, and the pressure is stabilized at about 4000 mTorr. At a flow rate of about 5,000 standard cubic centimeters per minute and a flow rate of about 250 standard cubic centimeters per minute, co2 and 〇2 were introduced into a reaction furnace 'and mixed into a mixed gas of TMCTS and CPO. (: The addition of 02 and 02 can stabilize the plasma and improve the uniformity of the film. The total high-frequency RF power sent to the reactor is about 600 watts, and the low-frequency power is about 300 watts. The wafer is being deposited $ 上 接 叉 After a predetermined period of deposition, it will move to the next deposition station 'in this way to accept the deposition on each deposition station, and finally deposit the ultra-low-k thin film. After the wafer passes through the last deposition station, Remove from the reactor and then optionally further accept the tempering procedure described in Example 5. As stated in the above example, the prepared film has a dielectric constant ranging from about 2.0 to about 2.25. Fast heat Tempering ("RTA") processing can also be used to stabilize ultra-low-k films. The dielectric constant k of the films obtained according to this document is less than about 28, which is at the integration stage in the back-end process ("BEOL") interconnect structure It also has thermal stability, and the temperature during integration processing can usually reach 400 degrees Celsius. Therefore, the affairs taught by the present invention can also be easily modified and suitable for manufacturing logic and memory devices. Between floors The thin film of electricity. The improvement method of the present invention has been fully shown in the above description and the attached figures 1-3 to tf. It should be noted that the aforementioned improvement method can be applied to countless electronic structures and devices. Manufacture. Although the present invention has been illustrated by way of illustration, it should be understood that the terms used therein are for illustration only and are not intended to be limited thereto.

563202 A7 B7 V. Description of the Invention (28) In addition, although the present invention is shown and described with a specific preferred embodiment and several alternative embodiments, those skilled in the art are welcome to do so without departing from the invention. In the spirit and scope, the present invention can make various possible changes based on what has been learned here. The proprietary properties or privileges declared in the specific embodiments of the present invention are defined in the scope of patents attached below. -31-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

563202 A8 Patent Application No. 090126663 B8 Chinese Application for Patent Scope Replacement (September 1992) g_ VI. Application for Patent Scope 1. A method for manufacturing a thermally stable ultra-low dielectric constant film, including the following steps: Provide plasma Enhanced Chemical Vapor Deposition (PEC VD) reaction furnace; placing a substrate in the PECVD reaction furnace; passing a first precursor gas containing cyclosiloxane molecules into the PECVD reaction furnace; including at least a ring-shaped organic molecule A second precursor gas is passed into the PECVD reaction furnace, the ring structure has carbon, hydrogen, and oxygen atoms; and, a thin film including silicon, carbon, oxygen, and hydrogen and a plurality of nano-sized pores are deposited on the substrate. 2. The method according to item 1 of the patent application scope further comprises the step of mixing a blunt carrier gas into the first precursor gas. 3. The method according to item 1 of the patent application scope, wherein the PECVD reactor is a parallel-plate reactor. 4. The method according to item 1 of the patent application scope, wherein after the film is selectively deposited, it is heated at a temperature of not less than about 300 degrees Celsius for at least about 0.25 hours. 5. The method of claim 1 in which the film has a dielectric constant not exceeding about 2.8. 6. The method of claim 1 in which the film has a dielectric constant not exceeding about 2.3. 7. The method of claim 1, wherein the film has a dielectric constant ranging from about 1.5 to about 2.5. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC ~ 1 ~ This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 563202 A8 B8 8. The method according to item 1 of the patent application range, wherein the thin film comprises: silicon having an atomic percentage of about 5 to about 40; carbon having an atomic percentage of about 5 to about 45; oxygen having an atomic percentage of about 0 to about 50 And hydrogen in an atomic percentage of about 10 to about 55. 9. The method according to item 1 of the patent application scope, further comprising the following steps: providing a parallel reaction furnace having a substrate chuck having an area of about 300 square centimeters to 700 square centimeters, and the substrate and the top The gap between the electrodes is between about 1 cm and about 10 cm. 10. If the method for manufacturing a thermally stable ultra-low dielectric constant thin film according to item 3 of the patent application scope, the method further comprises the following steps: Sending a radio frequency power to the electrodes of the parallel plate PECVD & furnace. U. As stated in the method of item 1 of the patent scope, it further includes the following steps: The film is heated for a first time at a temperature not higher than about 300 degrees Celsius, and then heated at a temperature not lower than about 300 degrees Celsius -A second period of time, the second period of time is longer than the first-= 12 · The method of item U of the scope of the patent application, wherein the length of the second period of time is at least about ten times the length of the first period of time . 13. For the method of applying for the scope β of the patent, wherein the cyclooxygen burner is selected from the following group: tetramethylcyclotetraoxane and octamethylcyclotetraoxane. 14 .: The method on page "in the scope of patent," wherein the cyclosiloxane is tetramethylcyclotetrakisane. O: \ 74 \ 74699-920930 D〇〇6 \ HYC -2- 563202 The scope of patent application 15. The method according to the scope of patent application, wherein the organic molecules include the type of fused ring, which includes a ring structure transmitting significant ring tension, and the ring structure transmitting significant ring tension includes 3 , 4, 7, or more atoms. 16. The method of claim 1 in which the organic molecules are epoxycyclopentane. 17. The method according to item 1 of the patent application range, wherein the step of depositing the thin film further comprises the steps of: setting the temperature of the substrate to about 25 ° C to about 400 ° C; and setting the RF power density to about 0.05 watts per square centimeter to about 2.0 watts per square centimeter. 18. The method of claim 1, wherein the step of depositing the thin film further comprises: setting the flow rate of the epoxy siloxane to about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute. In the method according to the scope of the patent application, the flow rate of the cyclosiloxane is about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute. 20. The method of claim 1, wherein the step of depositing the thin film further comprises: setting the flow rate of the organic molecules at about 5 standard cubic centimeters per minute to about 100,000 standard cubic centimeters per minute. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC. 3-This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 563202 AB c D 夂, patent application park 21 The method of item 20, wherein the flow I of the organic molecules is between about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute. 22. The method of claim 1, wherein the step of depositing the thin film further comprises: setting the pressure of the PECVD reactor to about 50 mTorr to about 5000 mTorr. 23. The method of claim 22, wherein the pressure of the PECVD reactor is between about 100 mTorr and about 3,000 mTorr. 24. The method according to item 丨 of the patent application scope, wherein the step of depositing the thin film further comprises: > Seeing ratio of organic molecules of epoxy cyclopentene and cyclosiloxane of tetramethylcyclotetrasiloxane It is set at about 0.1 to about 0.7. 25. The method for manufacturing a thermally stable ultra-low dielectric constant film according to item 24 of the patent application, wherein the edge of the cyclosiloxane and the tetramethylcyclotetrasiloxane is greater than about 1 watt. Between 0.2 and about 0.4. 26. The method of claim 1, which further comprises: providing a parallel plate plasma enhanced chemical vapor deposition chamber. 27. The method of claim 1, wherein the plasma in the pECvD reaction is performed in continuous mode. 28. If the scope of patent application is the first! In the method, the plasma of the pECvD reaction is performed in a pulsed mode. ^ 29. If the method of claim 9 of the scope of patent application, the change factor of the substrate refreshing disk is X, then the RF power change factor. Angle O: \ 74 \ 74699-920930 DOC \ 6 \ HYC -4- 563202 as B8 C8 D8 VI. Application for patent scope 30. For the method of item 9 of the patent scope, where the area change factor of the substrate chuck is Y And the change factor of the gap between the gas distribution plate and the substrate chuck is Z, the flow change factor is YZ to maintain the existence time of the plasma. 31. The method of claim 18, wherein when the PECVD reactor includes a plurality of deposition stations, the flow rate of the cyclosiloxane is multiplied by the total number of deposition stations in the PECVD reaction furnace. 32. A method for manufacturing a thermally stable ultra-low-k film, comprising the following steps: A plasma-enhanced plasma-enhanced chemical vapor deposition (PECVD) reactor is provided, and a pre-processed wafer is provided. Placed on a substrate chuck with an area between about 300 cm² and about 700 cm², and maintaining the gap between the wafer and the top electrode at about 1 cm to about 10 cm; A precursor gas is passed into the PECVD reaction furnace; at least a second precursor gas containing a ring-shaped organic molecule is passed into the PECVD reaction furnace, the ring structure has carbon, hydrogen and oxygen atoms; and a substrate is deposited on the substrate; Ultra-low-k film. 33. A method for manufacturing a thermally stable ultra-low-k film, comprising the following steps: Providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor, O: \ 74 \ 74699-920930DOC \ 6 \ HYC ~ 5 ~ This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202 Α8 Β8 C8 D8 VI. Patent application scope Place a wafer on an area of about 300 square centimeters to about 700 cm2 substrate chuck, and maintain the gap between the wafer and the top electrode at about 1 cm to about 10 cm; with a flow rate between about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute Cyclosiloxane precursor gas, and a second precursor gas of organic molecules is passed over the wafer in the reactor at a flow rate of about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute. Between about 25 degrees Celsius and about 400 degrees Celsius, and the pressure in the reactor is maintained between about 50 mTorr and about 5000 mTorr; at a RF power density of about 0.05 watts per square centimeter to about 2.0 per square centimeter Watt case, in An ultra-low-k film is deposited on the wafer; and the ultra-low-k film is tempered at a temperature of not less than about 300 degrees Celsius for at least about 0.25 hours. 34. A method for manufacturing a thermally stable ultra-low-k film, including the following steps: Providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor; placing a wafer in an area substrate On a substrate chuck of about 500 square centimeters to about 600 square centimeters, and maintaining the gap between the wafer and the top electrode at about 1 cm to about 7 cm; at about 25 standard cubic centimeters to about every minute A flow rate of 200 standard cubic centimeters passes the cyclosiloxane precursor gas, and a second precursor gas of organic molecules is passed into the reaction furnace at a flow rate between about 10 standard cubic centimeters per minute and about 120 standard cubic centimeters per minute. Wafer O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) AB c D 563202 6. In the scope of patent application, the temperature is maintained at about Celsius 60 degrees to about 200 degrees Celsius, and the pressure in the reactor is maintained between about 100 mTorr and about 3000 mTorr; in the case of RF power density of about 0.25 watts per square centimeter to about 0.8 watts per square centimeter Sink on the wafer Accumulate an ultra-low-k film; and temper the ultra-low-k film at a temperature of not less than about 300 degrees Celsius for at least about 0.25 hours. 35. An electronic structure having an insulating material layer as an inter-layer or inter-layer dielectric in a wire structure, comprising: a pre-processed semiconductor substrate having a first metal region embedded in the first insulating material layer; a first A conductor region is embedded in a second insulating material layer formed of an ultra-low-k material. The ultra-low-k material includes broken, carbon, oxygen, and hydrogen, and a plurality of nano-sized pores, which constitutes the ultra-low k material has a dielectric constant not exceeding about 2.8, the second insulating material layer is in close contact with the first insulating material layer, the first conductor region is electrically conductive to the first metal region, and a second conductor region, It is electrically conductive in the first conductor region and embedded in a third insulating material layer containing an ultra-low-k material, and the third insulating material layer is in tight contact with the second insulating material layer. 36. The electronic structure according to item 35 of the patent application scope further includes a dielectric cover layer interposed between the second insulating material layer and the third insulating material layer. 37. The electronic structure according to item 35 of the patent application scope, further comprising: a first dielectric capping layer interposed between the second insulating material layer and the third insulating material layer; and a second dielectric capping layer Is located on top of the third insulating material layer. O: \ 74 \ 74699_920930 DOC \ 6 \ HYC This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 563202 38 · Yueshen, the electronic structure of item 36 of the patent I, in which the dielectric cap layer is formed, is selected from the following constituent groups: silicon oxide, silicon nitride, nitrogen oxides, Nitrided shredded metals, carbonized carbides, carbon oxides, and carbon-doped oxides and their hydrogen-containing compounds. 39. For example, the electronic structure of the 38th patent scope, wherein the refractory metal contained in the refractory nitrided hard metal is selected from the following constituent groups: button, wrong, feed, tungsten. The electronic structure of the item 37 of the patent, wherein the material forming the first dielectric cap layer and the second dielectric cap layer is selected from the following constituent groups: silicon oxide, silicon nitride, nitrogen Silicon oxide, refractory silicon nitride metal inversion compounds, and carbon-doped oxides and their hydrogen-containing compounds. The electronic structure of Liru's application for the scope of patent No. 40, in which the hard-to-hide metal and hard-to-hide nitrogen-cut metal are selected from the following constituent groups: Syria, zirconium, and tungsten. 4 = The electronic structure of the scope of application for item 35, wherein the first insulating layer is selected from the following constituent groups: oxidized smash, nitrided shard, silicate glass (PSG), borophosphosilicate glass (BpSG), And the kind of these materials he doped. 43. The electronic structure according to item 35 of the scope of patent application, further comprising:-a diffusion barrier layer of a dielectric material is deposited on at least one of the second insulating layer and the third insulating material layer. 44. If the electronic structure of the 35th scope of the patent application, it also contains: Its material O: \ 74 \ 74699-920930 DOC \ 6 \ HVC -8-This paper size applies to China National Standard (CNS) A4 specifications ( 21〇χ297mm) 563202 A8 B8 C8 __ D8 VI. Patent Application Scope-Dielectrically Active Ion Etching (RIE) hard mask / grinding barrier, located on top of the second insulating material layer, and a dielectric diffusion A barrier layer is on top of the RIE hard mask / abrasive barrier layer. 45. The electronic structure according to item 35 of the patent application scope, further comprising: a first dielectric RIE hard mask / grinding stopper layer on top of the second insulating material layer; a first dielectric diffusion barrier layer, Located on top of the first dielectric RIE hard mask / grinding stop layer; a second dielectric RIE hard mask / grinding stop layer on top of the third insulating material layer; and a second dielectric diffusion A barrier layer is on top of the second dielectric RIE hard mask / abrasive stop layer. 46. The electronic structure according to item 45 of the patent application scope, further comprising: a dielectric capping layer between the interlayer ultra-low-k material dielectric and the intra-layer ultra-low-k material dielectric. 47. An electronic structure having an insulating material layer as an inter-layer or inter-layer dielectric in a wire structure, comprising: a pre-processed semiconductor substrate having a first metal region embedded in the first insulating material layer; and at least One conductor region vibrates at least one second insulating material layer formed of an ultra-low-k material. The ultra-low-k material is basically composed of silicon, carbon, oxygen, and hydrogen, and a plurality of nano-sized pores. The ultra-low-k material has a dielectric constant of not more than about 2.8, and the at least one second insulating material O: \ 74 \ 74699-920930 DOC \ 6 \ HYC. Q _ This paper size applies to China National Standard (CNS) A4 specifications (210X297 male sauce) 563202 A8 B8 C8 D8, patent-pending application + + one-heart-eight: one is in close contact with the first insulating material layer, and one of the conductor regions to the spoon is electrically conductive In the first metal region. 48. If the scope of the patent application is not limited to 47 items < electronic structure, it also includes: J I meaning layer 'is located between each of the at least one second insulating material layer. 49. The electronic structure in item 47 of the Qing patent scope further includes: a second dielectric capping layer 'is located between each of the at least one second insulating material layer; and a private I layer is placed on the uppermost layer. The top of the second insulating material layer. 50. For example, the fourth and eighth obstructive structures in the patent application range, wherein the material forming the dielectric cap layer is selected from the following constituent groups: Oxidation seconds, nitrided silicon, and “silicon silicon” refractory nitrogen Cut metals, carbonized dreams, dream compounds, and carbon-doped oxides and their gaseous compounds. 51. If the electric scope of the patent application No. 50 is all owned by the Institute # 人 ㈣ 卜 人 s ° structure, where the refractory nitrided metal is included in the refractory metal is made of tantalum, zirconium, silicon, and crane . Selected from the composition group: 52.-an electronic structure with an insulating material layer as the wire structure, including: θ U interlayer dielectric first insulating material-a pre-processed semiconductor substrate 'has embedded in the first layer First metal zone; O: \ 74 \ 74699-920930 DOC \ 6 \ HYC 563202 A8 B8 C8 D8 6. The scope of the application for a patent A first conductor area is embedded in a second insulating material layer, the second insulating material layer is in close contact with the first insulating material layer, and the first conductor area is electrically Conducted in the first metal region; a second conductor region, which is electrically conductive in the first conductor region and embedded in a third insulating material layer, the third insulating material layer is tightly connected to the second insulating material layer Contact; a first dielectric capping layer interposed between the second insulating material layer and the third insulating material layer, and a second dielectric capping layer on top of the third insulating material layer, wherein the first The first and second dielectric cap layers are formed of an ultra-low-k material. The ultra-low-k material includes silicon, carbon, oxygen, and hydrogen, and a plurality of nano-sized pores. The ultra-low-k material has no more than about 2.8. Dielectric constant. 53. An electronic structure having an insulating material layer as an inter-layer or inter-layer dielectric in a wire structure, comprising: a pre-processed semiconductor substrate having a first metal region embedded in the first insulating material layer; a first A conductor region is embedded in a second insulating material layer, the second insulating material layer is in close contact with the first insulating material layer, and the first conductor region is electrically conductive to the first metal region; a second conductor Region, which is electrically conductive in the first conductor region and embedded in a third insulating material layer, the third insulating material layer is in tight contact with the second insulating material layer; and a diffusion barrier layer, which contains ultra-low The material of k material is deposited on at least one of the second and third insulating material layers. The super O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size applies to Chinese National Standard (CNS) A4 size (210X 297 mm) 563202 Low-k materials include hard, carbon, oxygen, and hydrogen, as well as many nano-sized pores that are much more than low-k materials with a dielectric constant of no more than about 2.8. • an electronic structure having an insulating material layer as an inter-layer or inter-layer dielectric in a wire structure, including a pre-processed semiconductor substrate having a first metal region embedded in a first insulating material layer; a first A conductor region is embedded in a second insulating material layer, the second insulating material layer is in close contact with the first insulating material layer, and the first conductor region is electrically conductive to the first metal region; a second conductor Area, which is electrically conductive in the first conductor area and embedded in a first slab edge material layer, the third insulating material layer is in close contact with the second insulating material layer;-active ion etching (RIE) hard A masking / grinding barrier layer on top of the second insulating material layer; and a diffusion barrier layer on the top of the RIE hard masking / grinding barrier layer, wherein the RIE hard masking / grinding barrier layer The layer and the diffusion barrier layer are formed of an ultra-low-k dielectric material including silicon, carbon, oxygen, and hydrogen, and a plurality of nano-sized pores. The ultra-low-k material has a dielectric not exceeding about 2.8 constant. 55 · —An electronic structure having an insulating material layer as an inter-layer or inter-layer dielectric in a wire structure, comprising: a pre-processed semiconductor substrate having a first metal region embedded in the first insulating material layer; O: \ 74 \ 74699-920930 DOC \ 6 \ HYC " ~ This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 563202 A8 B8 C8 D8 6. The scope of the application for a patent A first conductor area is embedded in a second insulating material layer, the second insulating material layer is in close contact with the first insulating material layer, and the first conductor area is electrically Conducted in the first metal region; a second conductor region, which is electrically conductive in the first conductor region and embedded in a third insulating material layer, the third insulating material layer is tightly connected to the second insulating material layer Contact; a first RIE hard mask / grinding barrier layer on top of the second insulating material layer; a first diffusion barrier layer on the top of the first RIE hard mask / grinding barrier layer; a first Two RIE hard masks / grinding barriers are located on top of the third insulating material layer; and a second diffusion barrier layer is positioned on tops of the second RIE hard masks / grinding stop layers, wherein the RIE hard masks The cover / abrasive barrier layer and the diffusion barrier layer are formed of an ultra-low-k dielectric material. The ultra-low-k material includes silicon, carbon, oxygen, and hydrogen, and numerous nano-sized pores. The dielectric constant does not exceed about 2.8. 56. For example, the electronic structure of the scope of application for patent No. 55 further includes a dielectric capping layer, which is formed of a material containing the ultra-low-k dielectric material and is located between the interlayer dielectric layer and the interlayer dielectric layer. 57. A method for manufacturing a thermally stable ultra-low dielectric constant thin film, comprising the steps of: providing a plasma enhanced chemical vapor deposition (PECVD) reactor; placing a substrate in the PECVD reactor; O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202 A8 B8 C8 D8 The patent application park will contain the second siloxane molecule in the furnace One or two propulsion gases are passed into the PECVD, but at least the ring structure containing PFrvnP, ^ ^ ^ organic knife "the second precursor gas is passed into the PECVD reactor, the ring structure has carbon, hydrogen And oxygen atoms; and in the presence of C02 or (^ 02 and 〇2) ^ 7 months, a thin drum film containing oxygen and hydrogen containing oxygen and hydrogen on the substrate and a lot of Nai The pores in the size of rice. 58. If the 57th item of the scope of the patent application is applied, ^ A _ production method, and also includes the step of mixing .02 into the first W-drive rolling body. Method, further comprising mixing the rolled body of ⑺2 or co2 and 〇2 into the first precursor gas And the second predecessor step. Once the method of item 57 in the scope of patent application is applied, the krypton reaction furnace is a parallel plate type reactor. 61. If the method of scope of patent application is 57, Wherein, after the film is selectively deposited, it is heated at a temperature of not less than about 300 degrees Celsius for at least about 0.25 hours. Wherein the film has a medium in which the film has a medium in which the film has a medium 62. If the electrical constant of the method of the 57th aspect of the patent application does not exceed about 2.8. 63 · If the electrical constant of the method of the 57th aspect of patent application does not exceed about 2.3. 64 · If the electrical constant of the method of 57th aspect of patent application The range is from about 1.5 to about 2.5. 65. The method according to item 57 of the patent application, wherein the film contains: 〇: \ 74 \ 74699.92093. DOC \ 6 \ HYC _ 14 _ This paper standard is applicable to the Chinese National Standard (CNS) A4 size (210 X 297 mm) 563202 Fragments ranging from about 5 to about 40 atomic percent; carbons ranging from about 5 to about 45 atomic percent; oxygen from about 0 to about 50 atomic percent; and hydrogen from about 10 to about 55 atomic percent. 66. The method according to item 57 of the patent application scope, further comprising the following steps: I. For a parallel reaction furnace, the substrate chuck has an area of about 300 square centimeters to 700 square centimeters. The gap with the top electrode is between about 1 cm and about 10 cm. 67. The method for manufacturing a thermally stable ultra-low-dielectric-constant thin film according to item 60 of the patent application, the method further includes the following steps: · A radio frequency power is sent to an electrode of the parallel plate PECVD reactor. 68. The method according to item 57 of the patent application scope, further comprising the following steps: heating the film for a first time at a temperature not higher than about 300 degrees Celsius, and then heating the film at a temperature not lower than about 300 degrees Celsius The film is heated for a second period of time, the second period of time being longer than the first period of time. The daily suppression method is the method in the scope of patent application No. 68, wherein the length of the second time zone is at least about ten times longer than the first time zone. 70. The method according to claim 57 in which the cyclosiloxane is selected from the group consisting of tetramethylcyclotetrasiloxane and octamethylcyclotetrasiloxane. 71. The method according to item 57 of the scope of patent application, wherein the cyclosiloxane is tetrakisylcyclotetraoxycarbon. 72. The method of claim 57 in the scope of patent application, in which the organic molecular packages are each fused and mounted, and this type contains a ring structure that transmits significant ring tension, O: \ 74 \ 74699-920930 DOC \ 6 \ HYC 563202 as B8 C8 D8 6. Scope of patent application Among them, the ring structure transmitting significant ring tension contains 3, 4, 7 or more atoms. 73. The method of claim 57 in which the organic molecules are epoxy and cyclopentyl. 74. The method according to item 57 of the patent application, wherein the step of depositing the thin film further comprises the following steps: setting the temperature of the substrate to about 25 degrees Celsius to about 400 degrees Celsius; and setting the RF power density to about 0.05 watts per square centimeter to about 2.0 watts per square centimeter. 75. The method according to item 58 of the scope of patent application, wherein the step of depositing the thin film further comprises: setting the flow rate of the epoxy siloxane to about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute, and The flow rate of the C02 is set at about 25 standard cubic centimeters per minute to about 1000 standard cubic centimeters per minute. 76. The method of claim 75, wherein the flow rate of the cyclosiloxane is set between about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute, and the flow rate of the C02 is set about every minute 50 standard cubic centimeters to about 500 standard cubic centimeters per minute. 77. The method according to item 58 of the patent application, wherein the step of depositing the thin film further comprises: setting the flow rate of the organic molecules at about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC The size of this paper is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 A8 B8 C8 D8 VI. Patent scope 78. If the scope of patent scope is 77 The method of item 2, wherein the flow rate of the organic molecules is between about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute. 79. The method of claim 59, wherein the step of depositing the thin film further comprises: setting the flow rate of the C02 to about 25 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute and the flow rate of the 02 Set at about 0.5 standard cubic centimeters per minute to about 50 standard cubic centimeters per minute. 80. The method of claim 79, wherein the flow rate of C02 is set between about 50 standard cubic centimeters per minute and about 500 standard cubic centimeters per minute, and the flow rate of 02 is set at about 1 standard cubic per minute Centimeters to about 30 standard cubic centimeters per minute. 81. The method according to item 57 of the patent application, wherein the step of depositing the thin film further comprises: setting the pressure of the PECVD reactor to about 50 mTorr to about 5000 mTorr. 82. The method of claim 81, wherein the pressure of the PECVD reactor is between about 100 mTorr and about 4000 mTorr. 83. The method according to item 57 of the patent application, wherein the step of depositing the thin film further comprises: setting the flow ratio of the organic molecules of epoxycyclopentane to the cyclosiloxane of tetramethylcyclotetrasiloxane. 0.1 to about 0.7. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC The size of this paper is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 A8 B8 C8 D8 6. Application for patent scope 84. If the scope of patent application is the 8th A method for manufacturing a thermally stable ultra-low dielectric constant film according to item 1, wherein the flow ratio of the cyclosiloxane and the tetramethylcyclotetrasiloxane is between about 0.2 and about 0.4. 85. The method of claim 57 further comprises: providing a parallel plate plasma enhanced chemical vapor deposition chamber. 86. The method of claim 57 in which the plasma in the PECVD reactor is performed in a continuous mode. 87. The method of claim 57 in which the plasma in the PECVD reactor is performed in pulse mode. 88. If the method of item 66 of the scope of patent application 'is used, wherein the area change factor of the substrate plate is X, the RF power change factor is X. 89. If the method of applying for item 66 of the patent scope, wherein the area change factor of the substrate chuck is Y, and the gap change factor of the gas diffusion plate and the substrate plate is Z, the flow change factor is YZ to make the plasma Time of existence is maintained. 90. The method of claim 75, wherein when the PECVD reactor includes a plurality of deposition stations, the flow rate of the cyclosiloxane is multiplied by the total number of deposition stations in the PECVD reaction furnace. 91. A method for manufacturing a thermally stable ultra-low-k film, comprising the steps of: providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor; O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202 as B8 C8 D8 VI. Patent application scope Place a pre-processed wafer on an area of about 300 square meters Cm to about 700 square centimeters of the substrate chuck, and the gap between the wafer and the top electrode is maintained at about 1 cm to about 10 cm; a first precursor gas containing cyclosiloxane molecules is passed into the PECVD reactor Medium; at least a second precursor gas containing a ring-shaped organic molecule is passed into the PECVD reactor, the ring structure has carbon, hydrogen and oxygen atoms; and is deposited on the substrate in the presence of C02 or C02 and 02 Produce an ultra-low-k film. 92. The method of claim 91 in the scope of patent application further includes the step of mixing C02 into the first precursor gas. 93. The method of claim 91 in the scope of patent application, further comprising the step of mixing C02 or a mixed gas of C02 and 02 into the first precursor gas and at least the second precursor gas. 94. The method of claim 92, wherein the step of depositing the thin film further comprises: setting the flow rate of the first precursor to about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute, and The flow rate of C02 is set at about 25 standard cubic centimeters per minute to about 100 standard cubic centimeters per minute. 95. If the method of applying for item 94 of the patent scope, wherein the flow rate of the first precursor is set at about 25 standard cubic centimeters per minute to about 200 standard per minute O: \ 74 \ 74699-920930 DOC \ 6 \ HYC paper The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202 A8 B8 C8 D8 6. The patent application range is between cubic centimeters, and the flow rate of this C02 is about 50 standard cubic centimeters per minute to about every minute 500 standard cubic centimeters. 96. The method of claim 93, wherein the step of depositing the thin film further comprises: setting the flow rate of the C02 to about 25 standard cubic centimeters per minute to about 1000 standard cubic centimeters per minute, and The flow rate is set at about 0.5 standard cubic centimeters per minute to about 50 standard cubic centimeters per minute. 97. The method of claim 96, wherein the flow rate of C02 is set between about 50 standard cubic centimeters per minute and about 500 standard cubic centimeters per minute, and the flow rate of 02 is set at about 1 standard cubic per minute Centimeters to about 30 standard cubic centimeters per minute. 98. A method for manufacturing a thermally stable ultra-low-k film, comprising the following steps: providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor, placing a wafer in an area between About 300 square centimeters to about 700 square centimeters of the substrate chuck, and the gap between the wafer and the top electrode is maintained at about 1 cm to about 10 cm; the first precursor gas of cyclosiloxane and the second organic molecule The precursor gas is passed onto the wafer in the reaction furnace, the temperature is maintained at about 25 ° C to about 400 ° C, and the pressure in the reaction furnace is maintained at about 50 mTorr to about 5000 mTorr; O: \ 74 \ 74699-920930 DOC \ 6 \ HYC The size of this paper is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 A8 B8 C8 D8 6. The scope of patent application is about RF power density of about per square 0.05 watts per centimeter to 2.0 watts per square centimeter, and in the presence of C02 or C02 and 02, an ultra-low-k film is deposited on the wafer; and the ultra-low-k film is at a temperature of not less than about 300 degrees Temper for at least about 0.25 hours. 99. The method of claim 98 in the scope of patent application further includes the step of mixing C02 into the first precursor gas. 100. If the method of applying for the scope of the patent No. 98, further comprises the step of mixing a mixed gas of C02 or (: 02 and 02) into the first precursor gas and at least the second precursor gas. 101. If the scope of the patent application is 99 The method of claim 1, wherein the step of depositing the thin film further comprises: setting the flow rate of the precursor to about 5 standard cubic centimeters per minute to about 1000 standard cubic centimeters per minute, and setting the flow rate of co2 at about every minute 25 standard cubic centimeters to about 1000 standard cubic centimeters per minute. 102. The method of claim 101, wherein the flow rate of the first precursor is set to about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute. Between, and the flow rate of the C02 is set to about 50 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute. 103. For the method of claim 100, wherein the step of depositing the thin film further includes: O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) 563202 A8 B8 C8 D8 The flow rate of 2 is set to about 25 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute, and the flow rate of 02 is set to about 0.5 standard cubic centimeters per minute to about 50 standard cubic centimeters per minute. 104. If a patent is applied for The method of range item 103, wherein the flow rate of CO2 is set between about 50 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute, and the flow rate of 02 is set to about 1 standard cubic centimeter per minute to about 30 standard cubic centimeters per minute. 105. A method for manufacturing a thermally stable ultra-low-k film, comprising the following steps: providing a parallel plate type plasma enhanced chemical vapor deposition (PECVD) reactor; It is placed on a substrate chuck with an area of about 500 square centimeters to about 600 square centimeters, and the gap between the wafer and the top electrode is maintained at about 1 cm to about 7 cm; the first precursor of cyclosiloxane The gas and the second precursor of organic molecules are introduced onto the wafer in the reaction furnace, the temperature is maintained at about 60 ° C to about 200 ° C, and the pressure in the reaction furnace is maintained at about 100 milliseconds. With an RF power density of about 0.25 watts per square centimeter to about 0.8 watts per square centimeter and the presence of C02 or C02 and 02, the ultra-low-k film is deposited on the wafer; And temper the ultra-low-k film for at least about 0.25 hours at a temperature of not less than about 300 degrees Celsius. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 563202 A8 B8 C8 D8 VI. Application scope of patent 106. For the method of applying for scope item 105 of the patent, it also includes the step of mixing C02 into the first precursor gas. 107. If the method of claim 105 is applied, the method further includes the step of mixing CO 2 or a mixed gas of CO 2 and O 2 into the first precursor gas and at least the second precursor gas. 108. The method of claim 106, wherein the step of depositing the thin film further comprises: setting the flow rate of the first precursor to about 5 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute, and The flow of C02 is set at about 25 standard cubic centimeters per minute to about 1000 standard cubic centimeters per minute. 109. The method of claim 108, wherein the flow rate of the first precursor is set to about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute, and the flow rate of the C02 is set to about one minute 50 standard cubic centimeters to about 500 standard cubic centimeters per minute. 110. The method of claim 107, wherein the step of depositing the thin film further comprises: setting the flow rate of C02 to about 25 standard cubic centimeters per minute to about 100 standard cubic centimeters per minute, and the flow rate of 02 Set at about 0.5 standard cubic centimeters per minute to about 50 standard cubic centimeters per minute. 111. The method of claim 110, wherein the flow rate of C02 is set between about 50 standard cubic centimeters per minute and about 500 standard cubic centimeters per minute, and the flow rate of 02 is set at about 1 standard cubic per minute Centimeters to about 30 standard cubic centimeters per minute. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC The size of this paper is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 563202 A8 B8 * C8 D8 VI. Application scope of patent 112.-Kind of thermal stability of manufacturing A method for an ultra-low dielectric constant thin film, including the following steps: Providing a plasma enhanced chemical vapor deposition (PEC VD) reactor; placing a substrate in the PECVD reactor; using C02 as a carrier gas to contain silicon ring A first precursor gas of an oxane molecule is passed into the PECVD reactor; at least a second precursor gas including an organic molecule with a ring structure is passed into the PECVD reactor, the ring structure having carbon, hydrogen and oxygen atoms; and In the presence of C02, a thin film containing silicon, carbon, oxygen, and hydrogen and numerous nano-sized pores are deposited on the substrate. 113. If the method of claim 112 is applied, the flow rate of the first precursor is from about 5 standard cubic centimeters per minute to about 1000 standard cubic centimeters per minute, and the flow rate of < 〇2 is About 25 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute. 114. If the method of claim 113 is applied, the flow rate of the first precursor is from about 25 standard cubic centimeters per minute to about 200 standard cubic centimeters per minute, and the flow rate of C02 is about 50 standard per minute. Cubic centimeters to about 500 standard cubic centimeters per minute. 115. A method for manufacturing a thermally stable ultra-low dielectric constant film, comprising the following steps: providing a plasma enhanced chemical vapor deposition (PECVD) reaction furnace; placing a substrate in the PECVD reaction furnace; O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 563202 A8 B8 C8 D8 6. The scope of patent application will include the first precursor gas of cyclosiloxane molecules Pass into the PECVD reaction furnace; pass at least a second precursor gas containing a ring-shaped organic molecule into the PECVD reaction furnace, the ring structure having carbon, hydrogen, and oxygen atoms; pass CO 2 into the PECVD reaction furnace; and In the presence of the C02, a thin film containing silicon, carbon, oxygen, and hydrogen, and numerous nano-sized pores are deposited on the substrate. 116. If the method of applying for item 115 of the patent scope, wherein the flow rate of the C02 is from about 25 standard cubic centimeters per minute to about 1,000 standard cubic centimeters per minute. 117. If the method according to item 116 of the patent application is applied, the flow rate of the CO2 is from about 50 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute. 118. A method for manufacturing a thermally stable ultra-low dielectric constant film, comprising the following steps: providing a plasma enhanced chemical vapor deposition (PECVD) reaction furnace; placing a substrate in the PECVD reaction furnace; A first precursor gas of oxane molecules is passed into the PECVD reactor; at least a second precursor gas containing organic molecules with a ring structure is passed into the PECVD reactor, the ring structure has carbon, hydrogen and oxygen atoms; C02 and The mixed gas of 02 is passed into the PECVD reactor; and in the presence of the C02 and 02, a thin film containing silicon, carbon, oxygen, and hydrogen and a plurality of nano-sized pores are deposited on the substrate. O: \ 74 \ 74699-920930DOC \ 6 \ HYC ~ 25 ~ This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 563202 A8 B8 C8 D8 6. Application scope of patent 119. If the scope of patent application The method of item 118, wherein the flow rate of C02 is from about 25 standard cubic centimeters per minute to about 1000 standard cubic centimeters per minute, and the flow rate of 02 is from about 0.5 standard cubic centimeters per minute to about 50 standard cubic centimeters per minute . 120. For the method of applying for the scope of patent No. 119, the flow rate of the C02 is from about 50 standard cubic centimeters per minute to about 500 standard cubic centimeters per minute, and the flow rate of the 02 is from about 1 standard cubic centimeter per minute to every minute. Approximately 30 standard cubic centimeters. O: \ 74 \ 74699-920930 DOC \ 6 \ HYC This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)