TW559687B - Method of determining mask feature and application thereof - Google Patents

Abstract

A method of determining mask features and an application thereof are disclosed. In the process of manufacturing alternating phase-shifting mask, a plurality of first phase assist features are added at the front, rear, left and right sides of a main contact feature, and the phase assist features and the main contact feature are arranged in regularly. Then, a phase assignment step is performed, for obtaining 180 degrees optical phase difference between any two patterns of the main contact feature and the phase assist features. After, a plurality of second phase assist features are added at the diagonal direction of the main contact feature, wherein the second phase assist features have the same phase with the first phase assist features located in the next side.

Description

559687 I-~~ ----------------- 1 5. Description of the invention (1) Field of the invention: The present invention relates to the lithography process of integrated circuits, especially to the Mask pattern definition method of alternating phase-shifting mask (Alt PSM) in lithography process. Background of the Invention: In the manufacturing process of semiconductors, semiconductor materials such as silicon or gallium arsenide (Gaiiuni Arsenide; GaAs) are mainly used to make component elements of electronic devices, such as capacitors, resistors, or switches. Photolithography and other technologies reduce the size and weight of electronic devices. Among them, since the lithography technology can not only be used to transfer the pattern of the circuit layout provided on the photomask to a semiconductor substrate, but also needs the assistance of the lithography process in the etching process and the ion implantation process, so the lithography Technology is an indispensable and important technology in the integrated circuit industry. In the lithography process, a photomask is generally based on a transparent flat plate, and opaque lines are formed on the flat plate to define a desired pattern. The transparent flat plate is generally made of quartz. The opaque circuit is defined by the chrome layer and the required circuit pattern is defined. The photomask is irradiated with incident light from a radiation source, and is patterned by the photomask and diffracted to form an image, and a virtual image is projected on the photoresist layer by a projection system. Among them, the good and bad of assessing the quality of the transfer pattern is mainly based on two indexes: resolution and depth of focus (DOF). The higher the resolution, the deeper the focus depth.

559687 V. Description of the invention (2) The better the transfer quality of the representative pattern. However, as the size of semiconductors has been reduced, the number of elements produced per unit area has increased, and the complexity of semiconductor elements has increased. In contrast, the complexity of the mask pattern has also increased, making the pattern on the mask denser and the distance between opaque areas shorter. When the numerical aperture (Numericai ApeKue; NA) decreases, light diffraction occurs when light penetrates the mask pattern, which makes it impossible for traditional photolithography techniques to improve. Therefore, how to improve the resolution and depth of focus in order to make a smaller size is a rather difficult subject. One of the many solutions is to use a phase shifting mask (PSM). The phase shift mask is a phase shift layer made on a traditional mask. The phase shift layer is used to delay the phase of the incident light by 180 degrees, as opposed to the phase of the original incident light, usually by using different thicknesses or different refractive indices. The light transmission layer is used to achieve a destructive interference between the incident light penetrating the phase shift layer and the incident light of an adjacent photomask element to form a wire pattern, and thereby improve the resolution and depth of focus. Therefore, one of the advantages of the phase shift mask is to increase the resolution of the defined pattern without changing the exposure wavelength. Among them, an alternate phase-shifting mask (Alt PSM) was invented by Levenson et al., And a phase shift material is mainly added between chrome feature patterns, and the incident light is generated by the phase shift material. The 180 degree phase difference reduces the interference effect caused by diffraction, which makes the contrast of the chromium film pattern borders increase. The definition of the pattern of the general alternating phase shift mask is shown in Figures 1 to 1 and Figures 2 to 2

Page 6 559687! ---------------------------- --------- I V. Description of Invention (3) s ^-Figures I 2 C, where Figures 1 a to 1 C are the definitions of a single pattern | and Figures 2 a to 2c are the definitions of dense patterns. ', | Please refer to FIG. 1a, which shows a top view of a single pattern 10 with electricity required on an alternating phase shift mask. First of all, around the single-way circuit required by the circuit, ® Case 10, and at a preset distance from the single pattern 10, a phase assist feature 12 is planted, and The plurality of phase auxiliary patterns 12 are arranged regularly with the single pattern 10 originally set, as shown in FIG. 1b. Next, a phase assignment step is performed, so that the phase difference between any two adjacent patterns on the alternating phase shift mask is about 180 degrees' as shown in FIG. 1c. In addition, please refer to FIG. 2a, which shows a top view of the dense pattern 52 required for the circuit on the alternating phase shift mask, wherein the dense pattern 52 is composed of a plurality of single patterns 50. First, around the dense pattern 52 required by the circuit, and at a preset distance from the dense pattern 52, plant the cloth auxiliary pattern 5 4 and make the added phase auxiliary patterns 5 4 and the previously set The single patterns 50 in the dense pattern 52 are regularly arranged, as shown in FIG. 2b. Next, a phase configuration step is performed, so that the phase difference of any two adjacent patterns on the alternating phase shift mask, whether it is the single pattern 50 or the phase auxiliary pattern 54 in the dense pattern 5 2, is about i 8 0 degrees, As shown in Figure 2c. Purpose and summary of the invention: While the integrated circuit continues to develop toward high density and small volume, if the focal depth of the lithography process is insufficient, the photoresist cannot be developed to the photoresist during development. 559687 I. Description of the invention (4 ) — '* 丨 at the bottom of the layer, resulting in incomplete contact between the contact metal wire and the element, and even a disconnection between the contact metal wire and the element, resulting in a reduction in the electrical stability of the semiconductor element j. Therefore, how to improve the resolution and focus depth of the lithography process is a technical issue to be overcome urgently. An object of the present invention is to provide a method for defining a mask pattern. First, a plurality of phase auxiliary patterns are set on the mask before and after the pattern on which a required pattern of a circuit has been formed. Then, after the phase arrangement step, another phase auxiliary pattern is set at the opposite corner of the previously set pattern. Through the above steps, in addition to reducing the possibility of phase conflict (phase conf 1 ict), the conversion time and output data size in the phase configuration step can also be reduced. Another object of the present invention is to provide an alternating phase shift mask, which is replaced by the above pattern definition method and a general lithography process. The phase f map H formed by the above steps on the phase shift mask is subsequently During the exposure and development process, 'the focus depth of the pattern required by the integrated circuit is increased. According to the purpose described above, the present invention includes: First, a method for forming a desired circuit pattern on a photomask. Pattern; then, in front of and behind the circuit pattern, and left and right, forming several ~ phase

These first phase auxiliary cases are kept in a row with the circuit pattern; then the phase configuration step is performed so that there is only one phase difference between any two single loop cases in the above-mentioned first and second auxiliary phase circuit diagrams :: Figure: Diagonal direction of the circuit pattern to form a number of second auxiliary auxiliary two-phase auxiliary circle case and circuit pattern and the first auxiliary case:

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559687 V. Description of Invention (5) Arrangement. Among them, the phase of the second-phase auxiliary pattern formed subsequently is the same as that of the first-phase auxiliary pattern located on two adjacent sides of the second-phase auxiliary pattern and interposed between it and the circuit pattern. The mask pattern definition method of the present invention can be applied to manufacture an alternating phase shift mask, and an alternating phase assist feature pattern and a ring phase assist feature pattern are simultaneously formed in the alternate phase shift mask to improve the focus of the circuit pattern. Deep invention detailed description: The present invention discloses a mask pattern definition method and its application, which uses a definition method different from the conventional technology to form an alternating phase shift mask, and does not change the numerical aperture control of the optical exposure system and Under the light source, the focal depth and resolution of the integrated circuit lithography process are increased. In order to make the description of the present invention more detailed and complete, reference may be made to the following descriptions and illustrated in Figures 3a to 8d. Figures 3a to 3d are shown in the alternating phase shift mask of the present invention. Definition flow chart of a single pattern. Please refer to Fig. 3a, which shows a top view of a single pattern 100 required for the circuit on the alternating phase shift mask. First " First, the cloth auxiliary pattern is planted at the front, rear and left and right sides of the single pattern 100 required by the circuit at a preset distance from the single pattern 100. 102, phase auxiliary pattern 104 , Phase auxiliary pattern 106, and phase auxiliary pattern ^ 1 0 8 'and add the phase auxiliary pattern 1 〇2, phase auxiliary pattern j 〇 /,' phase auxiliary pattern 10 6 and phase auxiliary pattern 10 8 and the original Set a single pattern

559687 V. Description of the invention (6) I 0 0 is arranged regularly, as shown in Figure 3b. Next, the phase arrangement step is performed, so that the phase difference between any two adjacent and pattern on the alternating phase shift mask is about 180 degrees, that is, a single pattern 100 is independent of the phase auxiliary pattern 102 and the phase auxiliary pattern. 104. The phase auxiliary pattern 6 or the phase auxiliary pattern 6 and the case 108 have a phase difference of about 180 degrees, as shown in FIG. 3c. The above-mentioned phase difference of about 180 degrees is merely an example, and other phase differences having odd multiples of 180 degrees are not limited to the present invention. Subsequently, in the diagonal direction of the single pattern 100 required by the circuit, that is, between the phase auxiliary pattern 10 2 and the phase auxiliary pattern 104, the phase auxiliary pattern 1 0 4 and the phase i auxiliary pattern 1 0 6 Between the phase auxiliary pattern 1 06 and the phase auxiliary pattern 108, and between the phase auxiliary pattern 108 and the phase auxiliary pattern 102, respectively, the cloth is planted in the same phase as the phase auxiliary pattern described above, that is, it does not have Other phase auxiliary patterns II of phase difference 〇, phase auxiliary pattern 11 2, phase auxiliary pattern 11 4 and phase auxiliary pattern | | 116, and add the phase auxiliary pattern 110, phase auxiliary pattern 112, phase | I auxiliary pattern added 11 4 and the phase auxiliary pattern 11 6 are the same as the previously set single pattern. Ii 1 〇0 and the phase auxiliary pattern 1 0 previously set, the phase auxiliary pattern 1 0 4, the phase auxiliary pattern 106 and the phase auxiliary pattern 108 are all Arranged regularly, as in 3d

I Ishow. Among them, as shown in Fig. 3d, the method of enclosing a single pattern 100 using the same-phase phase shift assistance | pattern can be called a ring type I auxiliary feature pattern. In addition, FIG. 4a to FIG. 4d are flowcharts for defining a dense pattern in the alternating phase shift mask 丨 · of the present invention. Please refer to Figure 4 & which is shown as | | Top view of the dense pattern i 5 2 required for the circuit on the parent phase shift mask | Pattern i 5 〇 p head |

559687 V. Description of the invention (7) First, in the front, rear and left and right sides of the dense pattern 15 2 required by the circuit, and at a preset distance from the dense pattern 1 5 2 'the cloth-phase auxiliary pattern group 1 5 4, The phase auxiliary pattern group 1 5 6, the phase auxiliary pattern group 1 58, and the phase auxiliary pattern group 160. Among them, the phase auxiliary pattern group 154, the phase auxiliary pattern group 156, and the phase auxiliary pattern group 1 58 are each composed of a plurality of single phase auxiliary patterns. For example, in FIG. 4b, the phase auxiliary pattern group 1 5 4 is composed of the phase auxiliary pattern 1 6 2 a, the phase auxiliary pattern 162b, and the phase auxiliary pattern 162c; the phase auxiliary pattern group 156 is composed of the phase auxiliary pattern 164a, The phase auxiliary pattern 164 b and the phase auxiliary pattern 164 c are composed of household weights; the phase auxiliary pattern group 1 5 8 is composed of the phase auxiliary pattern 1 6 6 a, the phase auxiliary pattern 1 6 6 b, and the phase auxiliary pattern 1 6 6 c; The phase auxiliary pattern group 160 is composed of a phase auxiliary pattern 168a, a phase auxiliary pattern 168b, and a phase auxiliary pattern 1 6 8 c. In addition, the phase auxiliary pattern group 1 5 4, the phase auxiliary pattern group 156, the phase auxiliary pattern group 158, and the phase auxiliary pattern group 160 are added to a plurality of single phase auxiliary patterns and the dense pattern 15 2 that was originally set. The single patterns 1 50 are arranged regularly, as shown in Figure 4b. Next, the phase configuration step is performed, so that the phase difference between any two adjacent patterns on the alternating phase shift mask is about 180 degrees, that is, regardless of the phase auxiliary pattern group 154 and the phase auxiliary pattern group added previously. 156, the phase auxiliary pattern group 158, and a plurality of single phase auxiliary patterns in the phase auxiliary pattern group 160 are intact. It is also set to grab a single pattern 1 $ 0 in the pattern 152, or a single phase auxiliary pattern and a single pattern 150, with a phase difference of about 80 degrees, as shown in Figure 4c. Show. Subsequently, in the diagonal direction of the dense pattern 152 required by the circuit, that is, in 559687 V. Description of the invention (8) Phase auxiliary pattern 162c of the phase auxiliary pattern group 154 and phase auxiliary pattern 1 64a of the phase auxiliary pattern group 156 Between phase auxiliary pattern 164c of phase auxiliary pattern group 1 56 and phase auxiliary pattern 16 6c of phase auxiliary pattern group 158, phase auxiliary pattern 166a of phase auxiliary pattern group 158 and phase auxiliary pattern 168c of phase auxiliary pattern group 160 Between the phase auxiliary pattern 168a of the phase auxiliary pattern group 160 and the phase auxiliary pattern 1 62a of the phase auxiliary pattern group 1 54, a phase auxiliary pattern 170, a phase auxiliary pattern 172, a phase auxiliary pattern 174n, and a phase auxiliary pattern are respectively planted. Fortunately, the auxiliary pattern 176 and the added auxiliary pattern 170, the auxiliary pattern 172, the auxiliary pattern 174, and the auxiliary pattern 176 are the same as those of the dense pattern 15 2 in the single pattern 150 and the previously set number. The phase auxiliary patterns in the phase auxiliary pattern group 1 5 4, the phase auxiliary pattern group 1 5 6, the phase auxiliary pattern group 1 5 8 and the phase auxiliary pattern group 1 60 are all arranged regularly, as shown in FIG. 4 d As shown. The phase auxiliary pattern added above is in the same phase as the adjacent phase auxiliary pattern, and does not have a phase difference. According to Fig. 4d, the phase auxiliary pattern 170 added later is in phase with the adjacent phase auxiliary pattern 16 2 c and phase auxiliary pattern 16 4 a. Similarly, the phase auxiliary pattern 1 72 is adjacent to the adjacent The phase auxiliary pattern 1 64c and the phase auxiliary pattern 166c are in phase; the phase auxiliary pattern 174 is in phase with the adjacent phase auxiliary pattern 1 6 6 and the phase auxiliary pattern 1 6 8 c; the phase auxiliary pattern 1 7 6 is in phase with the adjacent phase The auxiliary pattern 168 and the phase auxiliary pattern 162 a are in phase. As shown in Fig. 4d, it is called an alternative type auxiliary feature pattern. When comparing Fig. 1c and Fig. 3d, the phase auxiliary pattern 110, the phase auxiliary pattern U2, the phase auxiliary pattern 1 丨 4, and the phase formed by the mask pattern definition method of the present invention are compared.

Page 12 559687 V. Description of the invention (9) = Pattern 116, f The pattern of the single-pattern definition method and the two phases are different, and the formation time and phase of the two are not supported. 2 Figure = phase ^ Case 176, Hexian Xi 4 pattern 172, phase auxiliary pattern Π4 and phase auxiliary ^ 荦, the formation time points of the two auxiliary cases formed by the two methods of _ & I and located at the same location, and The phases are also different. It can be known that the present invention is characterized in that a plurality of phases are arranged one by one in front of, behind, and to the left and right of the pattern. And after the phase configuration step, at the opposite corner of the electricity: the additional set of the number of determined phases

Lii An uses the light grass pattern definition method of the present invention, which is located on the diagonal :: road pattern, | because there are more phase assist patterns in the same phase, iron focus depth, especially in the case of ring-shaped phase assist patterns The improvement is even more pronounced. The circuit diagrams ^ 5 and 6 are schematic diagrams of the patterns formed by using the mask patterns of the conventional and the present invention, respectively. Please refer to Section 5: The pattern 200 and the pattern 20 2 are contact hole patterns required by the original circuit, and the surroundings, for example, the pattern 2 10 are the added phase auxiliary patterns. Among them, under the conditions of NA = 0.75 and sigma = 0.3, the depth of focus of the obtained case 20 is 0.34, and the depth of focus of the pattern 20 is also 0.34. In addition, please refer to FIG. 6, the pattern 25 and the pattern 252 are contact holes required for the original road, and the surroundings have a phase difference of about 180 degrees. For example, the pattern 26 0 is an addition. Phase auxiliary pattern. Its ^ ;, under the same conditions as in FIG. 5, that is, NA = 0.75, and sigma = 〇.'3, so

Page 13 559687 V. Description of the Invention (ο) The depth of focus of the pattern 2 50 0 is 0 · 61, and the depth of focus of the pattern 2 60 0 is very small. Applying the mask pattern definition method of the present invention to the manufacture of an actual alternating phase shift mask, in addition to having the advantage of increasing the depth of focus, it can also save the phase configuration conversion time and the amount of output data, and can While making the alternating auxiliary feature pattern, a ring-shaped auxiliary feature pattern is also produced according to the pattern characteristics, so as to improve the depth of focus of the small-sized pattern. 7a to 7c show the definition process of a general alternating photomask. First, referring to FIG. 7a, a desired circuit pattern 302, a circuit pattern 304, a circuit pattern 306, a circuit pattern 308, and a circuit pattern 310 are formed on the alternating phase shift mask 300. Next, a phase auxiliary pattern 3 2 0 and a phase auxiliary pattern are formed around the circuit pattern 302, and around the circuit pattern 304, the circuit pattern 306, the circuit pattern 308, and the circuit pattern 310 at a predetermined distance. 3 3 0, and the number of phase auxiliary patterns 32 0 and circuit patterns 302 added, and the number of phase auxiliary patterns 33 0 and circuit patterns 304, circuit patterns 306, circuit patterns 308, and circuit patterns 310 are presented as follows Regular arrangement shown in Figure 7b. Subsequently, a phase configuration step is performed so that the phase difference between any two adjacent patterns on the alternating phase shift mask 300 is about 180 degrees, as shown in FIG. 7c. 8a to 8d show the definition process of the alternating photomask of the present invention. First, referring to FIG. 8a, a top view of a circuit pattern 402, a circuit pattern 404, a circuit pattern 406, a circuit pattern 408, and a circuit pattern 410 required for forming a circuit on an alternating phase shift mask 400 is formed. Next, the left and right sides of the circuit pattern 402, the circuit pattern 404, and the circuit pattern, respectively

Page 14 559687 V. Description of the invention (π) 406, circuit pattern 408, circuit pattern 410, left, right, front, left and right, are separated by a predetermined distance to form a plurality of phase auxiliary patterns 4 2 0 and a plurality of phase auxiliary patterns 430, In addition, the phase auxiliary patterns 42 and the circuit patterns 402 ′ and the phase auxiliary patterns 430 and the circuit patterns 404, the circuit patterns 406, the circuit patterns 408, and the circuit patterns 410 that are added are presented as shown in FIG. 8 b. Regular arrangement. Subsequently, a phase arrangement step is performed to make the phase difference between any two adjacent patterns on the alternating phase shift mask 300 be about 180 degrees, as shown in FIG. 8c. After that, at the opposite corners of the circuit pattern, another phase auxiliary pattern is formed: at the diagonal of the circuit pattern 40 2, a phase auxiliary pattern 450 is formed, and at the diagonal of the circuit pattern 40 4, a phase auxiliary pattern 460 is formed; At the opposite corners of the circuit pattern 406, a phase auxiliary pattern 470 is formed; at the opposite corners of the circuit pattern 410, a phase auxiliary pattern 480 is formed. Among them, since the diagonal corners of the circuit pattern 408 are already filled with the phase auxiliary pattern 43 previously set, no additional phase auxiliary pattern is set. In addition, the phases of these subsequently formed phase auxiliary patterns are determined by the phase auxiliary patterns of adjacent two sides, that is, the subsequently formed phase auxiliary patterns will have the same phase as the phase auxiliary patterns previously formed on both sides. Please refer to FIG. 7c And Fig. 8c, in which the phase arrangement step in Fig. 7c has a total of 53 single patterns to be calculated for phase arrangement, and in the phase arrangement step in Fig. 8c, there are a total of 40 single patterns to be calculated For phase configuration. Therefore, by comparison, it can be known that the alternate mask manufacturing process using the mask pattern definition method of the present invention can shorten the phase-conversion conversion time and the amount of output data compared with the conventional process. In addition to the above-mentioned increase in depth of focus, shortening the conversion time and output of the phase configuration

Page 15 559687 V. Description of the invention (12)-"Information $" and other advantages, the above-mentioned method of defining the mask pattern of the present invention is applied to any pattern, and the probability of conflict of main feature patterns can be reduced. Also, referring to FIG. 8d, the definition process of the alternating photomask of the present invention can simultaneously produce the ring-shaped auxiliary feature pattern and the alternating type auxiliary feature pattern in the alternating phase shift photomask 100. For a single pattern, the circuit pattern 402 surrounded by the ring-shaped auxiliary feature pattern can have a deeper focus depth than the circuit pattern 302 surrounded by the alternating auxiliary feature pattern, which is more conducive to small-sized patterns. Production. It is worth noting that a preferred embodiment of the present invention is applied to the manufacturing of a contact hole structure. Other integrated circuit structures can also be applied to the structure of the present invention, and the present invention is not limited thereto. In addition, the positions, quantities, and shapes of the circuit patterns and the phase auxiliary patterns in the above embodiments are merely examples, and can be changed or increased or decreased according to the needs of the product or process, without affecting the scope of patent application of the present invention. As understood by those familiar with this technology, the above description is only a comparative embodiment of the present invention, and is not intended to limit the scope of patent application of the present invention; all other things that are completed without departing from the spirit disclosed by the present invention Changes or amendments to the effect shall be included in the scope of patent application as described below.

Page 559687 Brief description of the drawings Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following figures, of which: Figures la to lc It is a flowchart of defining a single pattern in a general alternating phase shift photomask; Figures 2a to 2c show the flowchart of defining a dense pattern in a general alternating phase shift photomask; Figures 3a to 3d The figure shows the definition flow chart of a single pattern in the alternating phase shift mask of the present invention; Figures 4a to 4d show the definition flowchart of the dense pattern in the alternating phase shift mask of the present invention; FIG. 5 is a schematic diagram of a pattern formed by using a conventional mask pattern definition method; FIG. 6 is a diagram of a mask made by using a mask pattern definition method of the present invention. Schematic diagrams of the patterns formed; Figures 7a to 7c are schematic diagrams of the process of applying a general mask pattern definition method to the manufacture of alternating phase shift masks; and Figures 8a to 8d are shown as Definition of photomask pattern in the present invention Method applied to a schematic production flow of alternating phase shift mask. Drawing number comparison description: 10 single patterns and 12 phase auxiliary patterns

Page 559687 Simple illustrations of 50 single patterns 5 2 dense patterns 54 phase auxiliary patterns 100 single patterns 102 phase auxiliary patterns 104 phase auxiliary patterns 106 phase auxiliary patterns 108 phase auxiliary patterns 110 phase auxiliary patterns 112 phase auxiliary patterns 114 phase auxiliary patterns 116 phase auxiliary pattern 150 single pattern 152 dense pattern 154 phase auxiliary pattern group 156 phase auxiliary pattern group 158 phase auxiliary pattern group 1 6 0 phase auxiliary pattern group 162a phase auxiliary pattern 162b phase auxiliary pattern 162c phase auxiliary pattern 164a phase auxiliary pattern 164b phase Auxiliary pattern 164c Phase auxiliary pattern 16 6a Phase auxiliary pattern 166b Phase auxiliary pattern 16 6c Phase auxiliary pattern 168a Phase auxiliary pattern 168b Phase auxiliary pattern 168c Phase auxiliary pattern 170 Phase auxiliary pattern 172 Phase auxiliary pattern 174 Phase auxiliary pattern 176 Phase auxiliary pattern 200 pattern 202 pattern 210 pattern 250 pattern 252 pattern 260 pattern 300 alternating phase shift mask 3 0 2 circuit Case 304 of the circuit patterns 306 of the circuit patterns 308 of the circuit patterns 308 a circuit pattern with auxiliary pattern 320 with the auxiliary patterns 330 - -

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559687 Brief description of the drawing 4 0 0 Alternating phase shift mask 402 circuit pattern 404 circuit pattern 40 6 circuit pattern 408 circuit pattern 40 8 circuit pattern 420 phase auxiliary pattern 430 phase auxiliary pattern 450 phase auxiliary pattern 460 phase auxiliary pattern 470 phase auxiliary Pattern 480 phase auxiliary pattern

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Claims (1)

559687 6. Scope of patent application 1. A method for defining a mask pattern, at least including: forming a circuit pattern on a mask; forming a plurality of first phase auxiliary patterns in front of, behind, and to the left and right of the circuit pattern, wherein the first A phase auxiliary pattern has a predetermined distance from the circuit pattern; a phase arrangement step is performed to make a phase difference between the first phase auxiliary patterns and any two single patterns in the circuit pattern; and forming a plurality of first The two-phase auxiliary pattern is in a diagonal direction of the circuit pattern. 2. The method for defining a mask pattern as described in item 1 of the scope of patent application, wherein the above-mentioned first phase auxiliary pattern and the circuit pattern are regularly arranged. 3. The method for defining a mask pattern as described in item 1 of the scope of patent application, wherein the above-mentioned second phase auxiliary pattern is regularly arranged with the circuit pattern and the first phase auxiliary patterns. 4. The method for defining a mask pattern as described in item 1 of the scope of the patent application, wherein the phase difference is an odd multiple of 180 degrees. 5. The method for defining a mask pattern as described in item 1 of the scope of the patent application, wherein the above-mentioned second-phase auxiliary patterns are with the first-phase auxiliary patterns located on adjacent sides and interposed between the circuit patterns. With the same phase. 6. The mask pattern definition method as described in item 1 of the scope of patent application, wherein Page 20 559687 6. Scope of patent application The above circuit pattern is a single pattern. 7. The method for defining a mask pattern as described in item 1 of the scope of patent application, wherein the above-mentioned circuit pattern is a dense pattern, and the dense pattern is composed of a plurality of single patterns. 8. The method for defining a mask pattern as described in item 1 of the scope of patent application, wherein the circuit pattern is a contact hole structure. 9. The method for defining a reticle pattern as described in item 1 of the scope of the patent application, wherein the reticle is an alternating phase shift reticle. 10. The method for defining a mask pattern as described in item 1 of the scope of the patent application, wherein each of the first phase auxiliary patterns and each of the second phase auxiliary patterns have the same phase "to form a ring-shaped phase auxiliary feature. pattern. t 11. A manufacturing method according to the method for defining a mask pattern described in item 1 of the scope of patent application. 1 2. —An alternating phase shift mask is suitable for manufacturing a plurality of contact holes. The alternating phase shift mask includes at least: a background; a plurality of contact hole patterns are located on the background; and a plurality of phase auxiliary patterns On the background and surrounding the contact hole patterns, Page 21 559687 6. Scope of patent application The phase auxiliary patterns are manufactured according to the mask definition method described in item 1 of the scope of patent application. 1 3. The alternating phase shift reticle as described in item 12 of the scope of patent application, wherein the above-mentioned alternating phase shift reticle has a ring-shaped phase-assisted feature pattern and an alternating phase-assisted feature pattern, and the ring type The phase-assisted feature pattern and the alternating phase-assisted feature pattern are formed at the same time in the mask definition method described in item 1 of the patent application scope. 14. A photomask, comprising at least: a circuit pattern; a plurality of first phase auxiliary patterns are located in front of, behind, and to the left and right of the circuit pattern, wherein the first phase auxiliary patterns and the circuit pattern have a preset distance, and There is a phase difference between the first phase auxiliary patterns and any two single patterns in the circuit pattern; and a plurality of second phase auxiliary patterns are located in a diagonal direction of the circuit pattern, and among the second phase auxiliary patterns, One of them is in phase with the first phase auxiliary patterns located between the circuit pattern and adjacent sides. 15. The photomask according to item 14 of the scope of patent application, wherein the above-mentioned first phase auxiliary pattern and the circuit pattern are regularly arranged. 16. The photomask according to item 14 of the scope of patent application, wherein the second phase auxiliary pattern is in accordance with the circuit pattern and the first phase auxiliary patterns. Page 22 559687 6. The scope of patent application is arranged. 1 7. The photomask according to item 14 of the scope of patent application, wherein the phase difference is an odd multiple of 180 degrees. 18. The reticle according to item 14 of the scope of patent application, wherein said circuit pattern is a single pattern. 19. The reticle according to item 14 of the scope of patent application, wherein the above-mentioned circuit pattern is a dense pattern, and the dense pattern is composed of a plurality of single patterns. 20. The photomask according to item 14 of the scope of patent application, wherein the above-mentioned circuit pattern is a contact hole structure. 2 1. The photomask according to item 14 of the scope of patent application, wherein the photomask is an alternating phase shift photomask. 22. The photomask according to item 14 of the scope of patent application, wherein each of the first-phase auxiliary patterns and each of the second-phase auxiliary patterns have the same phase to form a ring-shaped phase auxiliary feature pattern. Page 23