TW557356B - Endpoint detection by chemical reaction - Google Patents
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557356 A7 ----- 五、發明說明(1 ) 經濟部智慧財產局員工消費合作社印製 ju申請案 本發明係關於下列共待審美國專利申請案: 序號09/073,605,律師案件目錄BU9-97-096,其標題爲”藉 化學反應之間接終點偵測”; 序號09/073,601,律師案件目錄BU9-97-098,其標題爲,,藉 化學反應與光散射之終點偵測”; 序號09/073,607,律師案件目錄FJ9-98-050 學反應與試劑之終點偵測”; 序號09/073,603,律師案件目錄f!9_98-061 產物在溶液中之還原; 序號〇9/073,604,律師案件目錄FI9-98-062 學反應與化學發光之間接終點偵測”; 序號〇9/〇73,6〇6 ’律師案件目錄FI9-98-067 學反應與光電離之終點偵測”;及 序號09/073,602,律師案件目錄BU七97_1〇〇,其標題爲"藉 化學反應之終點偵測”; 全部均於同一天提出申請,全部均歸屬於本發明之讓受人 ’且全部均以其全文併於本文供參考。 發明範I ::::針對半導體加且更特定言之’係針對 少除覆盍在另一薄膜上之一層薄膜之終點偵測。 發明背i 薄ίί:體工:上,於積體電路製造中之重要步驟,係爲 其下万基材上之選擇性形成與移除。此等薄膜係製 其標題爲’’藉化 其標題爲”氣態 (請先閱讀背面之注意事項¾填寫本頁) 其標題爲,,藉化 其標題爲,,藉化 rl裝--------訂--------- #557356 A7 ----- V. Description of Invention (1) Ju application filed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This invention relates to the following co-pending US patent applications: Serial No. 09 / 073,605, Lawyer's Case Catalog BU9- 97-096, whose title is "Indirect Endpoint Detection by Chemical Reaction"; Serial No. 09 / 073,601, Lawyer's Case Catalog BU9-97-098, whose title is, "Endpoint Detection by Chemical Reaction and Light Scattering"; 09 / 073,607, Attorney's Case Catalog FJ9-98-050 Academic Reactions and Reagent Endpoint Detection "; Serial No. 09 / 073,603, Attorney's Case Catalog f! 9_98-061 Reduction of Product in Solution; Serial No. 09 / 073,604, Attorney's Case Catalogue FI9-98-062 Endpoint detection between academic reaction and chemiluminescence "; Serial No. 009 / 〇73,6 06 'Attorney case list FI9-98-067 Endpoint detection of academic response and photoionization"; and serial number 09 / 073,602, Lawyer's Case Catalog BU VII 97_1〇〇, whose title is " Endpoint Detection by Chemical Reactions " It is incorporated herein by reference in its entirety. Ming Fan I :::: For semiconductor plus and more specifically, 'is for the detection of the end point of a thin film that is less overlaid on another film. The invention is thin: Physical: On the integrated circuit An important step in manufacturing is the selective formation and removal of 10,000 substrates. These films are made with the title "borrowed and its title is" gaseous (Please read the precautions on the back first ¾ fill out this Page) Its title is, and borrowed its title is, and borrowed rl installed -------- Order --------- #
本紙張尺度翻(eNS)A4—(2_f 297公釐) ^57356 A7Paper size turning (eNS) A4-(2_f 297 mm) ^ 57356 A7
經濟部智慧財產局員工消費合作社印製 557356Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 557356
關於上述之一項例外,係爲頒予Yu等人之美國專利 5,399,234,其中係描述一種介於拋光漿液中之氫氧化却與 欲被抛光層間之化學反應。拋光終點係經由傳送音波經過 漿液’並偵測音速上之改變而加以監控,因爲當達到其下 方拋光阻擋層時,來自欲被拋光層之反應產物之濃度(在 拋光二氧化矽之情況中,想必是矽烷醇)會降低。 此等先前技藝方法各具有本性上之缺點,譬如不能夠即 時監測,必須自處理裝置移除晶圓才能檢查拋光是否完成 (並非當場),或缺乏敏感度。 此等缺點已利用導電性薄膜之當場終點偵測體系克服, 如在頒予Li等人之美國專利5,559,428中所述者,其標題爲" 薄膜厚度改變之當場監測”,但是,非導電性薄膜之適當 終點彳貞測尚待描述。 因此,仍然需要一種適用於所有類型薄膜之當場、即時 終點偵測體系。此種體系應具有高偵測敏感度,及極端快 速之回應時間,較佳係低於1或2秒。 發明摘述 因此,本發明之一項目的,係爲提供一種偵測覆蓋在另 一薄膜上之任何類型薄膜之移除終點之方法與裝置。 本發明之另一項目的,係爲提供當薄膜正被移除時之當 場終點偵測。 、 田 又另一個目的係爲提供具有高偵測敏感度與極端快速回 應時間之終點偵測。 根據上文列不及其他目的’係描述一種偵測覆蓋阻擋An exception to this is U.S. Patent 5,399,234, issued to Yu et al., Which describes a chemical reaction between the hydroxide in the polishing slurry and the layer to be polished. The polishing end point is monitored by transmitting sound waves through the slurry and detecting changes in the speed of sound, because when the polishing barrier layer below it is reached, the concentration of reaction products from the layer to be polished (in the case of polishing silicon dioxide, Presumably silanol) will decrease. Each of these prior art methods has inherent disadvantages, such as the inability to monitor immediately, the wafer must be removed from the processing device to check whether the polishing is complete (not on the spot), or lack of sensitivity. These shortcomings have been overcome using the on-site endpoint detection system for conductive films, such as described in US Patent 5,559,428 issued to Li et al., Entitled "On-Site Monitoring of Changes in Film Thickness", but non-conductive The proper endpoint detection of the film is yet to be described. Therefore, there is still a need for a spot, real-time endpoint detection system applicable to all types of films. Such a system should have high detection sensitivity and extremely fast response time, which is better It is less than 1 or 2 seconds. SUMMARY OF THE INVENTION Therefore, one item of the present invention is to provide a method and device for detecting the removal end point of any type of film covered on another film. Another aspect of the present invention The project is to provide on-the-spot endpoint detection when the film is being removed. Tian also aims to provide endpoint detection with high detection sensitivity and extremely fast response time. It is not as good as the others listed above. Purpose 'describes a method for detecting coverage block
本紐尺錢财@國家標準(CNS)A4規格(2Ϊ 〇 X 297公釐) 557356This New Rule Money @National Standard (CNS) A4 Specification (2Ϊ〇 X 297mm) 557356
五、發明說明(4 經濟部智慧財產局員工消費合作社印製 薄膜上<標的薄膜之移除終點之方法,其方式是⑻使用— 種^與阻㈣膜及標的薄膜之-選擇性產生化學反應產物 <製私,移除標的薄膜;⑼使此化學反應產物轉化成個別 產物;及⑻當移除標的薄膜時,監測此個別產物之含量。 亦描述種偵測覆蓋在阻擋薄膜上之標的薄膜之移除終點 疋方法,該標的薄膜與阻擋薄膜之一係包含氮化物,其方 式疋(a)使用一種在使該氮化物曝露至製程時會產生氨之製 私,移除標的薄膜;⑼使該氨轉化成個別產物;及(c)當移 除標的薄膜時,監測此氨之含量。 本發明係描述另一種偵測覆蓋在阻擋薄膜上之標的薄膜 <移除終點之方法,其方式是⑷使用一種會與阻擋薄膜及 k的薄膜之返擇性產生氣態化學反應產物之製程,移除 標的薄膜,(b)使存在之氣態化學反應產物與個別氣體混合 ,以形成固體粒子,及(c)當移除標的薄膜時,監測固體粒 子f °亦描述一種偵測液體中極低濃度物質之方法,其方 式是自液體中萃取存在之物質成爲氣體,將此氣體與另一 種物質混合,以形成固體粒子,及監測固體粒 測該物質。 里以偵 本發明係描述另一種偵測覆蓋在阻擋薄膜上之標的薄膜 之私除終點之方法,其方式是(a)使用一種會與阻擋薄膜產 生化學反應產物之製程,移除標的薄膜;與⑼當移除標的 薄膜時,監測化學反應產物之含量。亦描述一種偵測覆業 在阻擒薄膜上之標的薄膜之移除終點之方法,該標的薄: 與阻擋薄膜之一係包含氮化物,其方式是⑻使用一種當使 , 裝--------訂------ (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (4) The method of removing the end of the target film on the printed film produced by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the method is to use-a kind of ^ and the barrier film and the target film-selective The reaction product < manufactures privately and removes the target film; ⑼ converts the chemical reaction product into individual products; and ⑻ monitors the content of the individual product when the target film is removed. It also describes a method of detecting the coverage of the barrier film. Method for removing the end point of the target film. One of the target film and the barrier film includes a nitride. The method is as follows: (a) using a system that produces ammonia when the nitride is exposed to the process, and the target film is removed; ⑼ convert the ammonia into individual products; and (c) monitor the ammonia content when the target film is removed. The present invention describes another method for detecting the target film covering the barrier film < removal end point The method is to use a process that will selectively produce gaseous chemical reaction products with the barrier film and the film of k, remove the target film, and (b) make the existing gaseous chemical reaction produce Mixed with individual gases to form solid particles, and (c) monitoring the solid particles when the target film is removed f ° also describes a method for detecting very low concentrations of substances in a liquid by extracting the substances present in the liquid Become a gas, mix this gas with another substance to form solid particles, and monitor the solid particles to measure the substance. The present invention describes another method for detecting the end point of the exclusion of the target film covering the barrier film. The method is to (a) use a process that produces a chemical reaction product with the barrier film to remove the target film; and monitor the content of the chemical reaction product when the target film is removed. Also describe a method for detecting the resistance of the overlay industry The method of removing the end point of the target film on the film, the target film: one of the barrier films and the barrier film contains nitride, the method is to use a kind of equipment, install -------- order ---- -(Please read the notes on the back before filling this page)
557356 A7 五、發明說明(5 ) 該氮化物曝露至製程時會產生氨之製程,移除標的薄膜; 與(b)當移除標的薄膜時,監測氨之含量。亦描述一種偵測 液體中極低濃度物質之方法,其方式是自液體中萃取存在 之物質成爲氣體,此方法包括使疏水性可滲透薄膜之第一 個側面與含有該物質之液體接觸,使此薄膜之第二個側面 與氣流接觸,並允許該物質以氣體通過薄膜,且變成在氣 流中運送,及監測氣流以偵測該物質。 亦描述另一種偵測覆蓋在阻擋薄膜上之標的薄膜之移除 終點之方法,其方式是使用漿液進行化學·機械拋光,藉 由(a)使用一種會在漿液中產生化學反應產物之製程,移除 標的薄膜,(b)將一種在與化學反應產物反應時會產生特徵 結果之試劑,添加至漿液中,及(c)當移除標的薄膜時,監 測漿液之特徵結果。 亦描述另一種降低溶液中氣態產物量之製程,其方式是 使疏水性薄膜之第一個側面與溶液接觸,使疏水性薄膜之 第二個側面與含水液流接觸,及允許氣態產物以氣體通過 薄膜,且變成在含水液流中運送。 亦描述另一種偵測覆蓋在阻擋薄膜上之標的薄膜之移除 終點I方法,其方式是:⑻使用一種會與阻擋薄膜及標的 薄膜之一選擇性產生化學反應產物之製程,移除標的薄膜 ’(b)使居化學反應產物轉化成個別產物;(c)自該個別產物 產生受激發物種;及⑼當移除標的薄膜時,監測該受激發 物種所發射光之含量。 吓描述另一種偵測覆蓋在阻擋薄膜上之標的薄膜之移除 本紙張尺度賴巾關家鮮(CNS)A4規格⑵〇 注 意 頁 -8 - X 29~Γ公髮) 557356 A7 B7 五、發明說明(6 ) 終點之方法,其方式是使用一種會與阻擋薄膜及標的薄膜 之一選擇性產生氣態化學反應產物之製程,移除標的薄膜 ;及當移除標的薄膜時,藉低限光電離質量光譜法,龄測 化學反應產物之含量。 附圖簡述 此等及其他特徵、方面及優點,將自下文本發明之詳細 説明而更易於顯見及更爲明暸,其中: 圖1顯示欲以化學-機械方式拋光之標的薄膜之橫截面; 圖1A顯示圖1中所示經拋光基材之放大圖; 圖2顯示用以降低拋光前漿液中氨濃度之洗氨器之橫截 面; 圖3顯示漿液取樣及使用試劑進行氨偵測之裝置; 圖4顯示自漿液中萃取氨氣之萃取單元之橫截面; 圖5顯示使用光散射偵測氨氣之裝置; 圖6顯示圖5監測之放大圖; 圖7顯示使氨氣轉化成NO及使用質量光譜偵測之裝置; 圖8顯示使用共振加強多光子電離光譜學之NO取樣裝置 (請先閱讀背面之注意事項@寫本頁) Φ rl裝 # 經濟部智慧財產局員工消費合作社印製 圖9顯示使氨氣轉化成NO及使用化學發光偵測之裝置; 圖10顯示電腦監測半導體晶圓拋光之輸出軌跡; 圖11顯示使用傅立葉轉換微波光譜學之化學偵測裝置; 及 圖12顯示使用低限光電離質量光譜學之化學偵測裝置; 全部均根據本發明。 ___________ - 9 - 本紙張尺度過用中國國家標準(CNS)A4規格⑵〇 χ 297公爱) — 、發明說明(7 ) 丝鱼體實施例之説明 本發明於本文中係僅就化學_機械拋光作爲特殊實例加 以説明’而非意謂將本發明之應用性限制於半導體技術。 熟諳此藝者將明瞭本發明可廣泛地應用於其中期望偵測覆 盍在阻擋薄膜上之標的薄膜之移除終點之任何製程,其係 藉由包括以下步驟之方法,⑷使用一種會與阻擋薄膜及標 的薄膜之一選擇性產生化學反應產物之製程,移除標的薄 膜;(b)使存在之化學反應產物轉化成個別產物;及⑷當移 除標的薄膜時,監測個別產物之含量;或 藉由包括以下步驟之方法,⑻使用一種會與阻擋薄膜及標 的薄膜之一選擇性產生氣態化學反應產物之製程,移除標 的薄膜,(b)將存在之氣態化學反應產物與個別氣體混合, 以形成固體粒子,及(c)當移除標的薄膜時,監測固體粒子 之量;或 藉由包括以下步驟之方法,⑷使用一種會與阻擒薄膜產生 化學反應產物之製程,移除標的薄膜;與(b)當移除標的薄 膜時,監測化學反應產物之含量;或 藉化學機械拋光,使用漿液,藉由包括以下步驟之方法 ,(a)使用一種會於漿液中產生化學反應產物之製程,移除 標的薄膜,(b)將一種在與化學反應產物反應時會產生特徵 結果之試劑,添加至漿液中,及(c)當移除標的薄膜時,臣々 測漿液之特徵結果;或 藉由包括以下步驟之方法,(a)使用一種會與阻擋薄膜及們 的薄膜之一選擇性產生化學反應產物之製程,移除標的^ 五、發明說明(8 ) A >()使化予反應產物轉化成個別產物;⑷自個別產物產 又敫發物種,及⑷當移除標的薄膜時,監測該受激發物 種所發射之光含量;或 藉由G括以下步驟之方法,⑻使用—種會與阻擒薄膜及標 的薄膜之一選擇性產生氣態化學反應產物之製程,移除標 的薄膜;與(b)當移除標的薄膜時,藉低限光電離質量光譜 監測化學反應產物含量。 曰 本發明亦針對溶液中氣態產物量之降低,且更特定言之 係針對在使用於化學·機械拋光之拋光漿液中氣態產物 之卩牛低。熟讀此藝者將明瞭本發明可廣泛地應用於其中期 望降低溶液中氣態產物量之任何製程,其方式是使疏水性 薄膜之第一個側面與溶液接觸,使疏水性薄膜之第二個側 面與含水液流接觸’及允許氣態產物以氣體通過薄膜,且 變成在含水液流中運送。 本發明亦爲可廣泛地應用於其中期望偵測覆蓋在阻擋薄 膜上之標的薄膜之移除終點之任何製程,該標的薄膜與阻 擋薄膜之一係包含氮化物,其係藉由⑻使用一種當使該氮 化物曝露至製程時會產生氨之製程,移除標的薄膜;(b)使 存在之氨轉化成個別產物;及(c)當移除標的薄膜時,監測 氨之含量。 如圖1中所示,吾人已發現當使用含有氫氧化鉀(K〇H)之 漿液’以化學-機械方式抛光基材100時,此基材具有氧化 物(Si〇2)標的薄膜1〇4位在氮化物(Si3N4)阻擋薄膜102上,則 在抵達界面106時,會發生化學反應,而造成氨(nh3 )之產 -11 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)557356 A7 V. Description of the invention (5) When the nitride is exposed to the manufacturing process, ammonia is produced, and the target film is removed; and (b) when the target film is removed, the ammonia content is monitored. A method for detecting a substance at a very low concentration in a liquid is also described by extracting a substance existing in the liquid into a gas. The method includes contacting a first side of a hydrophobic permeable film with a liquid containing the substance, so that The second side of the film is in contact with the airflow and allows the substance to pass through the film as a gas and becomes transported in the airflow, and the airflow is monitored to detect the substance. It also describes another method for detecting the end point of the removal of the target film overlaid on the barrier film. The method is to use a slurry for chemical and mechanical polishing. By (a) using a process that produces a chemical reaction product in the slurry, The target film is removed, (b) a reagent that produces characteristic results when reacted with a chemical reaction product is added to the slurry, and (c) the characteristic results of the slurry are monitored when the target film is removed. Also described is another process for reducing the amount of gaseous products in solution by contacting the first side of the hydrophobic film with the solution, bringing the second side of the hydrophobic film into contact with the aqueous liquid stream, and allowing the gaseous product to pass gas It passes through the membrane and becomes transported in an aqueous stream. It also describes another method for detecting the end point I of the target film covering the barrier film. The method is as follows: ⑻ Use a process that selectively produces a chemical reaction product with one of the barrier film and the target film, and remove the target film. '(B) convert the chemical reaction product into an individual product; (c) generate an excited species from the individual product; and, when the target film is removed, monitor the amount of light emitted by the excited species. Describes the removal of another target film that covers the barrier film. This paper size is based on the CNS A4 specification. Note: -8-X 29 ~ Γ (published) 557356 A7 B7 V. Invention (6) The method of describing the end point is to use a process that selectively generates a gaseous chemical reaction product with one of the barrier film and the target film, and remove the target film; and when the target film is removed, the lower limit photoionization is used. Mass spectrometry, measuring the content of chemical reaction products with age. BRIEF DESCRIPTION OF THE DRAWINGS These and other features, aspects, and advantages will be more apparent and clearer from the detailed description of the invention below, where: Figure 1 shows a cross-section of a target film to be chemically-mechanically polished; Figure 1A shows an enlarged view of the polished substrate shown in Figure 1; Figure 2 shows a cross-section of an ammonia scrubber to reduce the ammonia concentration in the slurry before polishing; Figure 3 shows a device for slurry sampling and ammonia detection using reagents Figure 4 shows a cross-section of an extraction unit for extracting ammonia from a slurry; Figure 5 shows a device for detecting ammonia using light scattering; Figure 6 shows an enlarged view of monitoring in Figure 5; Figure 7 shows the conversion of ammonia into NO and Device using mass spectrum detection; Figure 8 shows a NO sampling device using resonance-enhanced multiphoton ionization spectroscopy (please read the note on the back first @ write this page) Φ rl 装 # Printed by the Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Fig. 9 shows a device for converting ammonia gas into NO and using chemiluminescence detection; Fig. 10 shows a computer monitor output trace of semiconductor wafer polishing; Fig. 11 shows chemical detection using Fourier transform microwave spectroscopy The detection device; and FIG. 12 shows a chemical detection device using low-limit photoionization mass spectroscopy; all according to the present invention. ___________-9-This paper has been used in accordance with the Chinese National Standard (CNS) A4 specification ⑵〇χ 297 公 爱) — , Invention description (7) Description of the silk fish body embodiment The present invention is only related to chemical_mechanical polishing Explained as a specific example, rather than limiting the applicability of the present invention to semiconductor technology. Those skilled in the art will appreciate that the present invention can be widely applied to any process in which it is desired to detect the end point of the removal of the target film overlaid on the barrier film by using a method that includes the following steps: One of the film and the target film is a process for selectively generating chemical reaction products to remove the target film; (b) converting existing chemical reaction products into individual products; and monitoring the content of individual products when the target film is removed; or By a method including the following steps, (i) using a process that selectively generates a gaseous chemical reaction product with one of the barrier film and the target film, removing the target film, (b) mixing the existing gaseous chemical reaction product with an individual gas, To form solid particles, and (c) monitor the amount of solid particles when the target film is removed; or, by a method that includes the following steps, using a process that produces a chemical reaction product with the barrier film, remove the target film ; And (b) when the target film is removed, monitoring the content of the chemical reaction products; or by chemical mechanical polishing, using a slurry, By a method including the following steps, (a) using a process that generates a chemical reaction product in the slurry, removing the target film, (b) adding a reagent that will produce a characteristic result when reacting with the chemical reaction product, In the slurry, and (c) when the target film is removed, measure the characteristic results of the slurry; or, by a method including the following steps, (a) use a chemical that selectively produces one of the barrier films and one of the films The process of the reaction product, remove the target ^ V. Description of the invention (8) A > () to transform the reaction product into individual products; to produce species from individual products, and when the target film is removed, Monitor the light content emitted by the excited species; or, by using the following steps, use a process that selectively produces a gaseous chemical reaction product with one of the trapping film and the target film, and remove the target film; (B) When the target film is removed, the content of the chemical reaction product is monitored by the low-limit photoionization mass spectrum. The present invention is also directed to a reduction in the amount of gaseous products in a solution, and more specifically to a low level of yak in a gaseous product in a polishing slurry used in chemical and mechanical polishing. Those skilled in the art will understand that the present invention can be widely applied to any process in which it is desired to reduce the amount of gaseous products in a solution by contacting the first side of the hydrophobic film with the solution and making the second one of the hydrophobic film The sides are in contact with the aqueous liquid stream 'and allow gaseous products to pass through the membrane as a gas and become transported in the aqueous liquid stream. The present invention is also widely applicable to any process in which it is desired to detect the end point of the removal of a target film overlaid on a barrier film. One of the target film and the barrier film contains a nitride. When the nitride is exposed to a process that produces ammonia, the target film is removed; (b) the existing ammonia is converted into individual products; and (c) the ammonia content is monitored when the target film is removed. As shown in FIG. 1, we have found that when a substrate 100 is chemically-mechanically polished using a slurry 'containing potassium hydroxide (KOH), the substrate has an oxide (SiO 2) thin film 1. 4-position on the nitride (Si3N4) barrier film 102, when it reaches the interface 106, a chemical reaction will occur, resulting in the production of ammonia (nh3). -11-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
經濟部智慧財產局員工消費合作社印製 生。更明確言之,所使用之漿液爲煙霧狀矽石、水及 之混合物,具有pH値爲約1〇 5。當拋光氧化物時,會發生 下列反應; 曰Produced by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. More specifically, the slurry used was fumed silica, water, and mixtures thereof, having a pH of about 105. When polishing oxides, the following reactions occur:
Si02 + 2 KOH + H2〇 -> K2Si03 + 2 H20 當拋光氮化物時,會發生下列反應:Si02 + 2 KOH + H2〇-> K2Si03 + 2 H20 When nitride is polished, the following reactions occur:
Si3 N4 + 6 KOH + 3 Η2 Ο 3 K2 Si03 + 4 NH3 使所產生之氨溶解於漿液中,而由於相對較高阳値,故 其主要是以NH3而非NH,形式存在。因此,於漿液中氨含 量之改變,係表示已抵達其下方之氮化物薄膜,且移除氧 化物薄膜之終點,可藉由監測漿液中氨含量而測得。一旦 抵達終點,即可停止拋光。 更一般而T,移除覆蓋在含氮化物薄膜上之任何未含氮 化物薄膜之終點,可藉由監測漿液中之氨含量而偵測出。 反之’移除覆蓋在未含氮化物薄膜上之含氮化物薄膜之終 點,亦可以類似方式偵測出,其中氨係於最初存在,而在 氨量上之顯著降低係表示其終點。 又更一般而言,當漿液之一種成份會選擇性地與薄膜之 一(播論是覆蓋在上或其下方之薄膜)反應時,移除覆蓋在 另一薄膜上之任何薄膜之終點,可藉由監測漿液中化學反 應產物之含量而偵測出。 上述會產生氨之反應,將討論如下,但並非意欲將本發 明之範圍限制於該特定具體實施例。 爲實現上文關於在適於製造之環境中產生氨之發現,需 要當場(意即當晶圓正被拋光時)收集漿液與取樣。收集與 I - 12 - 本紙張尺度適用中國國家標準(CNS)A4規格⑵Q χ 297公爱)Si3 N4 + 6 KOH + 3 Η 2 Ο 3 K2 Si03 + 4 NH3 dissolves the generated ammonia in the slurry, and due to its relatively high impotence, it exists mainly in the form of NH3 rather than NH. Therefore, the change in the ammonia content in the slurry means that the nitride film below it has been reached and the end point of removing the oxide film can be measured by monitoring the ammonia content in the slurry. Once you reach the end point, you can stop polishing. More generally, T, the end point of removing any non-nitride-containing film covering the nitride-containing film can be detected by monitoring the ammonia content in the slurry. Conversely, the end point of removing the nitride-containing film covering the non-nitride-containing film can also be detected in a similar manner, in which ammonia is present initially, and a significant decrease in the amount of ammonia indicates its end point. And more generally, when one component of the slurry selectively reacts with one of the films (the film covered on or under it), removing the end point of any film covered on the other film can Detected by monitoring the content of chemical reaction products in the slurry. The above reaction that produces ammonia will be discussed below, but is not intended to limit the scope of the invention to this particular embodiment. In order to achieve the above findings regarding the production of ammonia in an environment suitable for manufacturing, it is necessary to collect the slurry and sample it on the spot (meaning when the wafer is being polished). Collection and I-12-This paper size applies to China National Standard (CNS) A4 specification ⑵Q χ 297 public love)
. . 裝------ (請先閱讀背面之^J意事寫本頁) 1111111. 557356 經濟部智慧財產局員工消費合作社印製 A7 Β7 五、發明說明(1〇 ) 取樣較佳係提供具有高敏感度(對氨而言)之快速回應,及 使得來自漿液中與環境空氣中之其他物質之干擾作用降至 最低。 很不幸地,上述漿液在使用於抛光之前已含有氨D氨濃 度係從低達5·0 X 1CT 6莫耳濃度(M)改變至高達5.〇 X ΙΟ- 5 Μ。當 拋光氮化物之被覆(意即均勻)層時,於漿液中產生之氨, 在室溫下係爲大約1·〇 X 1(Γ4Μ ;對於具有覆蓋15%晶圓面積 (其餘爲氧化物)之氮化物層之典型低圖樣因數製造晶圓而 吕’在氧化物/(氧化物+氮化物)界面處抛光,會產生 1.5 X ΚΓ 5 Μ。於此情況中,所要之濃度變化,將不能夠在拋 光期間與抛光如氣濃度之波動區別。因此,在抛光此類型 晶圓前之氨濃度必須降低,以達成所要之敏感度。 拋光前氨濃度之降低,若必要可利用洗氨器達成。在上 述情況中,洗氣器會使其濃度降至約2.5 X 1(Τ6Μ。此洗氣器 之主要組件爲Liqui-Cel薄膜接觸器200 (Extra-Flow 4x28型,由.. ------ (Please read ^ J on the back to write this page first) 1111111. 557356 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (1〇) Sampling is better Provides fast response with high sensitivity (for ammonia) and minimizes interference from other substances in the slurry and ambient air. Unfortunately, the above-mentioned slurry already contained ammonia D before being used for polishing. The ammonia concentration changed from as low as 5.0 × 1CT 6 Molar concentration (M) to as high as 5.0 × 10-5 M. When polishing the coating (meaning uniform) layer of nitride, the ammonia produced in the slurry is about 1.0 × 1 (Γ4M at room temperature; for 15% wafer area (the rest is oxide)) The typical low pattern factor of the nitride layer for manufacturing wafers and polishing at the oxide / (oxide + nitride) interface will produce 1.5 X ΚΓ 5 Μ. In this case, the desired concentration change will not It can be distinguished from the fluctuation of polishing gas concentration during polishing. Therefore, the ammonia concentration before polishing this type of wafer must be reduced to achieve the required sensitivity. The ammonia concentration before polishing can be reduced if necessary by using an ammonia scrubber. In the above case, the scrubber will reduce its concentration to about 2.5 X 1 (T6M. The main component of this scrubber is the Liqui-Cel membrane contactor 200 (Extra-Flow 4x28 type, by
Hoechst Celanese製造),示於圖2中。此接觸器含有Celgard (TM) 微孔性聚丙烯纖維202,其爲疏水性,且不允許水系溶液 穿透纖維薄膜,但確實會允許氣體交換。 來自儲槽之漿液係於204處進入接觸器200中,並於纖維 外側(亦稱爲殼側)上流經接觸器2〇〇,允許氨滲透至纖維 内側(亦稱爲腔侧),然後在206處離開及再循環回至204。 爲幫助移除漿液中之氨,將來自另一個儲槽而具有pH値約 3之HC1水溶液在腔側中循環,於208處進入,並於21〇處離 開’然後再循環回至208。來自漿液而雜交進入此Ηα氣流 --------------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) -13- 557356 A7 五、發明說明(11 中之氨氣,係藉由適度高濃度質子而立即轉化成NH4+,因 此有效防止任何少許量之NH3在洗氣器腔側中之可能蓄積 。此再循環之含水HC1液流與儲槽,於是可爲來自漿液之 大量氨之排水槽。 使用約10升水之含水HC1儲槽,利用〇·1 M HC1溶液調整至 ρΗ3.5,及使1〇升阳仞”之^以以…氨溶液通過上述接觸 器,則在30分鐘内,使氨含量降至所要之25χ1〇_6Μ。可使 此時間降低,其方式是增加接觸器之大小,串聯使用數個 接觸器’或溫和加熱漿液以增加氨之揮發性,或此三種方 式之任何組合。於漿液中之所要標的氨含量,可藉市購可 得之偵測器度量,譬如氨專用離子選擇性電極(ISE)。 一旦漿液已達到所要之標的氨含量,立即將其用以拋光 晶圓。然後自拋光墊收集漿液,以在拋光程序期間取樣。 此漿液可視情況利用適當試劑分析,以指示化學反應產物 之存在或不存在。 員 爲偵測漿液中之液態氨(於顏色上爲乳白色),一種適當 選擇是使用Nessler試劑(四碘汞酸鉀⑼之鹼溶液),其在與 氨反應時會轉變成特徵性褐色。在晶圓被拋光後,來自拋 光塾1〇8(參考圖1&3)上一個點之漿液3〇〇,係被連續果送 經過入口閥301至儲槽3〇2。Nessler試劑3〇4係以脈衝方式輪 送至儲槽302。於儲槽3〇2中之開孔306,係用以排放漿液^ 試劑混合物至廢料容器(未示出)。閥3〇1與開孔3〇6係經調 正,因此可達成及保持漿液在儲槽3〇2中之動態平衡。更 明確言之,漿液不斷地流入儲槽中且不斷地排出,而仍有 -14- # 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 557356 五、發明說明(12 ) 足夠新的漿液停留在儲槽中,以達成偵測氨之目的。 儲槽302具有至少一個壁或一部份壁3〇8爲透明的。一個 顏色感測器310(市購可得)係置於儲槽3〇〇之透明部份3〇8外 部,而當Nessler試劑與漿液中之任何氨反應時,會發出顏 色改變^唬。此方法能夠在降至5 χ 10_6莫耳濃度(約1〇〇叩的 之濃度下偵測氨,其中顏色改變係在低於J秒内發生。 一旦發現特徵性顏色改變,氮化物層即已外露,按需要 停止拋光(拋光可持續一段特定時間,在此工業中稱爲,,過 度拋光”)。可裝設電腦以控制此製程,及自顏色感測器獲 取信號,並將信號傳回拋光器以停止拋光。 亦應指出的是,其他試劑可用於終點偵測,依薄膜移除 製程期間所產生之化學反應產物而定。一般而言,被加入 漿液中之試劑,將造成會產生特徵結果之反應,譬如顏色 改變、光子(意即,所發射之光)或沉澱物。 用以偵測特徵結果之設備實例,已描述於顏色改變之情 況中。爲偵測光子,係使用適當感測器,譬如習用光電= 增管或紅外線感測器。爲偵測沉澱物,可使用光散射裝置 經濟部智慧財產局員工消費合作社印製 1解於漿液中之氨之取樣方毛 一旦自拋光墊收集漿液,即可使用各種取樣方法。代表 性方法係描述如下。 離子選擇性電極 一種偵測液態氨之方式,係利用市購可得之離子選擇性 電極’其中具有特定pH値之内部電極溶液,係與吾人感興 一…一 -15- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 557356Hoechst Celanese), shown in Figure 2. This contactor contains Celgard (TM) microporous polypropylene fiber 202, which is hydrophobic and does not allow aqueous solutions to penetrate the fiber membrane, but does allow gas exchange. The slurry from the storage tank enters the contactor 200 at 204 and flows through the contactor 200 on the outside of the fiber (also known as the shell side), allowing ammonia to penetrate into the inside of the fiber (also known as the cavity side), and then Leave at 206 and recycle back to 204. To help remove ammonia from the slurry, an HC1 aqueous solution with a pH of about 3 from another storage tank was circulated in the cavity side, entered at 208, departed at 21 °, and then recycled back to 208. From the slurry and hybrids enter this Ηα air flow -------------- install -------- order --------- (Please read the precautions on the back before Fill out this page) -13- 557356 A7 V. Description of the invention (The ammonia gas in 11 is immediately converted into NH4 + by a moderately high concentration of protons, so it is effective to prevent the possibility of any small amount of NH3 in the scrubber cavity side Accumulation. This recycled aqueous HC1 liquid stream and storage tank can then be a drainage tank for a large amount of ammonia from the slurry. Use an aqueous HC1 storage tank with about 10 liters of water and adjust to ρΗ3.5 with 0.1 M HC1 solution, and Let 10 liters of impotence pass through the contactor with ... ammonia solution, then within 30 minutes, reduce the ammonia content to the required 25 × 10_6M. This time can be reduced by increasing the contactor Size, use several contactors in series' or gently heat the slurry to increase the volatility of ammonia, or any combination of these three methods. The desired ammonia content in the slurry can be measured by commercially available detectors, such as Ammonia-specific ion-selective electrode (ISE). Once the slurry has reached the required ammonia content, use it immediately The wafer is then polished. The slurry is then collected from the polishing pad for sampling during the polishing process. This slurry may be analyzed with appropriate reagents as appropriate to indicate the presence or absence of chemical reaction products. The staff is to detect liquid ammonia (in color) in the slurry Milky white), a suitable option is to use Nessler reagent (basic solution of potassium iodidemercurate), which will turn into a characteristic brown when reacted with ammonia. After the wafer is polished, it comes from polishing 8108 (Refer to Figure 1 & 3) The slurry 300 at the previous point was sent continuously through the inlet valve 301 to the storage tank 300. The Nessler reagent 304 was pulsed to the storage tank 302. The opening 306 in the slot 302 is used to discharge the slurry ^ the reagent mixture to a waste container (not shown). The valve 3001 and the opening 3006 are adjusted so that the slurry can be achieved and maintained in storage The dynamic balance in the tank 30. More specifically, the slurry continuously flows into the storage tank and is continuously discharged, and there is still -14- # This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Love) 557356 V. Description of invention (12) New enough The slurry stays in the storage tank to achieve the purpose of detecting ammonia. The storage tank 302 has at least one wall or a part of the wall 308 is transparent. A color sensor 310 (commercially available) is placed in the storage tank. The transparent part of the tank 300 is outside the 308, and when the Nessler reagent reacts with any ammonia in the slurry, it will change color. This method can reduce the concentration to 5 x 10-6 Molar (about 100). Ammonia is detected at a concentration of tritium, where the color change occurs in less than J seconds. Once a characteristic color change is found, the nitride layer is exposed and the polishing is stopped as needed (polishing can continue for a certain period of time in this industry Called, over-polished "). A computer can be installed to control the process, a signal can be obtained from the color sensor, and the signal can be passed back to the polisher to stop polishing. It should also be noted that other reagents can be used for endpoint detection, depending on the chemical reaction products generated during the film removal process. In general, reagents added to the slurry will cause reactions that produce characteristic results, such as color changes, photons (meaning, the emitted light), or precipitates. Examples of equipment used to detect feature results have been described in the context of color changes. To detect photons, a suitable sensor is used, such as a conventional photoelectric = multiplier or infrared sensor. In order to detect the sediment, a light scattering device can be used. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 1 Sampling square hair of ammonia dissolved in the slurry. Once the slurry is collected from the polishing pad, various sampling methods can be used. A representative methodology is described below. Ion-selective electrode A method for detecting liquid ammonia. It uses a commercially available ion-selective electrode 'with an internal electrode solution of a specific pH ,, which is of great interest to us ... I-15- This paper is applicable to China Standard (CNS) A4 size (210 X 297 mm) 557356
、發明說明(13 經濟部智慧財產局員工消費合作社印製 趣之溶液,經過半滲透性疏水性薄膜接觸。此薄膜允許來 自漿液之氨氣通過,改變内部電極溶液之阳値。此阳値 係以電化學方式監測。此方法可偵測降至5xl0_7莫耳濃度 I氨,在高濃度下係低於30秒内,但在低濃度下可能花費 長達1-3分鐘’其適合許多應用,但不適合所需要之此種特 定CMP終點偵測。 氟測量之度量法 另一種偵測液相中氨之方式,係利用一種複合試劑,其 在與氨接觸時會賦與螢光物種。所用之試劑含有鄰-苯二 甲酸(OPA)與充作還原劑之亞硫酸鹽(參閲z. Genfa等人,"含 水按離子在流動注入系統中之氟測量度量法",如以chem,第 61卷,第408頁,1989)。反應產物係爲高度螢光性,並可使用 發射光譜學,在降至2xl0_8莫耳濃度之濃度下偵測。但是 ,此方法可能花費高達10分鐘,才能達到完全,其再一次 不適用於此CMP應用。 化學發光 由於氨與次溴酸鹽在驗性溶液中反應所致化學發光之度 量’亦已使用具有放大器之光電倍增管進行(參閱又他等 人,藉流動注入分析與化學發光彳貞測,測定雨水與霧水中 之銨離子,,,Anal· Chem·,第65卷,第3489頁,I"3)。但是,此方 法未具有所需要之敏感度,以監測在此應用中以CMP拋光 氮化物時所產生之氨。此方法之回應時間太慢,以致不能 提供眞正當場即時程序控制。 自漿液萃取氨氣 _____ -16 - 本紙張過用中國國家標準(CNS)A4規格⑵G x 297公爱1 '—· 1— (請先閱讀背面之注意事項@寫本頁) S· rl裝 ----訂·---— — — — — # 557356 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(14 爲偵測與監控呈氣體形式之氨,因此使得譬如質量光譜 之方法能夠使用,故將來自拋光裝置(未示出)之漿液,泵 送經過圖4中所示之氨萃取單元300。萃取單元300係聚丙 烯微孔性中空纖維302構成,其係得自經折除之Liqui-Cel接 觸器(2.5x8型,由Hoechst Celanese製造)。纖維302允許氣體但 不允許液體從纖維之外部通過至其内部。 漿液係於304處泵送進入,於纖維302之外部上經過萃取 單元300,並於306處離開。乾燥且清潔之氣體(來自含有氨 濾器及視情況選用之去除ΝΟχ濾器之乾燥機)係於308處泵 送進入’經過纖維内部,並以含有氨氣之氣流312於310處 離開。載氣係於約30托之減壓下泵送,以幫助氨從漿液輸 送經過纖維及進入氣流中。減壓亦會增加整體流動速度, 其有助於降低回應時間以度量氨濃度上之改變。 然後可分析得自萃取器300之含氨氣流312,並監控移除 標的薄膜之終點偵測。氣相化學分析,譬如標準質量光譜 ’可爲南度敏感性並具有快速回應時間,其係爲終點偵測 所期望的。但是,隨著漿液取樣,有來自水蒸汽之實質干 擾,其雖然僅較高1原子質量單位(AMU),但豐富地存在。 在電子碰撞電離期間,水質量18可能失去一個氯,而造成 具有質量17之0Η離子,其具有與ΝΗ;3 +相同之質量。因此 ,得自漿液之氨信號可能極有效地被遮蔽,故終點偵測變 成不可能。 光散射 在氨氣已自漿液中萃取後,可經由將其與鹽酸蒸氣混合 -17- 表紙張尺度關家標準(CNS)A4規格(210X 297公釐) (請先閱讀背面之注意事項巧填寫本頁) rl^y^ — I-----訂--------- #· 557356 經濟部智慧財產局員工消費合作社印制农 A7 ______B7 _ 五、發明說明(15 ) ,並根據以下反應式,監測氯化銨固體粒子之形成,以進 行偵測: NH3 (g) + HC1 (g) + nH2 0 NH4 C1(H2 0)n (s) 供此監測體系用之裝置,係示於圖5中。將來自圖4之含 氨氣流312與含有已知濃度之氣態HC1並具有經良好控制濕 度之空氣流402混合。於混合時,氨與鹽酸蒸氣會立即反 應,以形成固體氯化銨粒子404。所產生之氣化銨4〇4之量 ,係使用雷射光束406,例如氦氖雷射,藉由監測得自粒 子404之巨觀散射,進行度量。 圖6説明如何監測散射。藉由雷射光束4〇6產生而打擊粒 子404之散射光子,係藉光電倍增管5〇2偵測。較佳係使用 叙射收集系統504 ’以提南光收集效率。此項技術之敏感 度’可利用圖5中之機械式斷績器408 (例如Stanford研究系 統SR450型)及與提供相位敏感性偵測之斷續器同步之鎖定 放大器(未示出;例如Stanford研究系統SR810型)而增加。當 晶圓正被拋光時,經散射光之量係與漿液中之氨濃度成正 比0 此形成固體粒子之反應是很快速的,因其爲一種單純酸 -驗反應,且對氨具選擇性,因爲極少氣體分子具有像驗 一樣之行爲。此反應係在低於1秒内發生,其極適用於如 所述之終點偵測體系。 應指出的是,所述之光散射方法與裝置,並不限於與監 測CMP終點一起使用。若覆蓋在上之薄膜係自其下方薄膜 藉餘刻移除,例如乾蚀刻(譬如反應性離子蚀刻),則其下 -18- 本紙張尺度適用T國國家標準(CNS)A4規格⑽x 297公髮) —~^ _ .----^--------^---------. (請先閱讀背面之注意事項寫本頁) 557356 A7 B7__ — 五、發明說明(16 ) 方薄膜(意即姓刻阻擋層)可經選擇爲在與蝕刻劑接觸時會 產生標記化學反應產物者。蚀刻程序之反應產物可藉所^ 之方法取樣,以監測標記化學反應產物之含量。 此光散射方法亦可用以偵測液體中極低(例如丨〇χ i〇-5m 或更低)濃度下之物質,譬如氨,其方式是自該液體萃取 以氣體形式存在之化學物質,使此氣體與另一種物質混合 ,以形成固體粒子,並監測固體粒子量,例如藉散射光。 轉化成一氧化氮(1) 水碎片0H之干擾,可經由使來自萃取單元300 (示於圖4 中)之含氨氣流中之氨,轉化成具有與0H不同質量之個別 產物而避開,及藉由偵測該個別產物,以間接偵測氨。一 種實例是使用如圖7中所示之觸媒轉化器,使氨轉化成一 氧化氮(NO)。 含氨氣流312係進入觸媒轉化器400中,例如一陣列之不 銹鋼管件,其具有足夠大之表面積,以供足量氣體被轉化 ’其係被加熱至800 C。此種轉化,稱爲Oswald製程,係藉 以下反應説明 4 NH3 (g) + 5 02 (g) — 4 NO (g) + 6 Η2 Ο (g) 應注意的是,供進入轉化器之氣流用之載氣,較佳係含 有氧(02)而非空氣,因爲空氣含有約15 ppm且質量爲30之 氮同位素(7N15)2,其與NO爲相同質量。 質量光譜 離開轉化器400之氣流402,係含有NO並進入質譜儀系統 4〇4中。旁通閥406係用以調整氣流之流量,並允許實質整 (請先閱讀背面之注咅?事項@寫本頁) rl裝 ----訂--------- 經濟部智慧財產局員工消費合作社印製 μ® 國家標準(CNS)A4 規格(21G χ 297 公爱) -— 557356 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(17 ) 體流經萃取單元300與觸媒轉化器400,造成快速度量回應 時間,而不會使質譜儀404被入射之含NO氣流之取樣氣體 超載。質譜儀系統404包含眞空室408,其含有四極質譜分 析器,與電子碰撞電離來源410,譬如Stanford研究系統殘留 氣體分析器RGA200型。此質譜儀具有八個數量級之動態範 圍,且可偵測降至約10 ppb含量之NO。此質譜儀係經選通 ,以偵測僅在質量/電荷30下離子,且信號可藉電腦獲得 ,以提供即時監測。 REMPI-TOF質量光譜學 質量光譜學之一種替代方法,係爲共振加強多光子電離 (REMPI)光譜學,其已被言正實可容易且敏感地偵測一氧化氮 之存在(參閲D. C. Jacobs等人,”1 + 1共振加強MPI光譜之還原 成群集分佈:對NO Α2 Σ +_ Χ2Π系統之應用",J. Chem. Phys.第 85卷,第5469頁(1986)。在圖8中,離開轉化器400之含NO氣 流402,係經過類似前文所述之旁通閥502,進入飛行時間 (TOF)質譜儀500中。脈衝分子束閥504係使氣流402轉變成 脈衝氣流506。氣流402之壓力爲約30托,在進入光譜計之 室中時,其足以形成射束,但未必會冷超音速膨脹。 脈衝閥504係經計時,以與脈衝雷射光束508協調,後者 係選擇性地使來自脈衝氣流506之NO電離。雷射光束508可 爲例如雷射系統之輸出,此系統具有倍頻Q-轉換Nd: YAG雷 射,在20 Hz下操作,用以泵送鈦藍寶石(Ti:S)可調諧雷射。 Ti:S雷射係經調整至904毫微米,且其輸出係使用BBO非線 性晶體倍頻兩次。第二個諧波係在452毫微米下,而第四 -20- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項@寫本頁) 裝 ----訂--------- # 557356 A7 -------- R7______ 五、發明說明(18 ) 個諧波係在所要之波長226毫微米下,或爲NO自基態之一 光子激發。所述之電離體系已証實極端有效,其中總偵測 敏感度降至1·〇 X 10-11托(參閲M. Asscher等人,,,自Pt(in)晶體表 面散射之NO之振動與旋轉能量分佈:藉二光子電離之偵 測 ’·,Phys· Rev· Lett 第 49 卷,第 % 頁 〇982》。 然後使脈衝電離氣流506,藉由利用電極51〇所產生之電 場加速。此等離子係行經漂移管512之長度,至偵測器514 。離子之運行時間係與其質量成正比,且因此到達信號之 時間選通,係僅用以度量來自N0之信號。將所形成之信 號在Boxcar平均器516 (得自Stanford系統SR250型)中進行平均 ’並引導至電腦以進行處理(未示出)。以靜態氣體度量爲 基礎’預期此項技術具有10 ppb之敏感度,且回應時間爲 數秒。 轉化成一氧化氮 將得自萃取單元300 (示於圖3中)之含氨氣流中之氨,轉 化成個別產物,藉由偵測個別產物,以間接偵測氨。一種 實例是使用如圖9中所示之觸媒轉化器,使氨轉化成一氧 化氮(NO)。 含氨氣流312係進入觸媒轉化器400中,例如一陣列之不 銹鋼管件,其具有足夠大之表面積,以供足量氨分子被轉 化,其係被加熱至800°C。此種轉化,稱爲〇swajd製程,係 藉以下反應説明 4 NH3 (g) + 5 02(g) ^ 4 NO (g) + 6 H20 (g) 載氣應爲乾燥且清潔,因此可達成快速回應時間以及最 -21 - 本紙張尺度適用中國國家標準(CNS)A4規格(21G x 2W公董)'—'' ' (請先閱讀背面之注意事項寫本頁) r;丨裝 #· 經濟部智慧財產局員工消費合作社印製 557356 A7 B7__ 五、發明說明(19 ) 低(背景NO。NO之轉化加上N0藉由化學發光之度量,使 得能夠在亞ppb含量下偵測,以及避免來自其他化學品之 干擾。 化學發光偵測(CLD) 化學發光現象係發生在當由化學反應所產生之受激分子 ’從激發態轉移至所允許之較低狀態中發射光時。化學發 光可用以偵測氨之存在(間接藉由偵測一氧化氮),於此情 況中係根據下式: N〇 (g) + 〇3 (g) no2 *(g) + o2 N02*(g) —N〇2(g) + hv 其中所發射之光(光子)係藉由高度敏感性光電倍增管(ρΜχ) 偵測。 化學發光偵測(CLD)用之裝置係示於圖9中。離開轉化器 400之含NO氣流402,係經過流量限制器406,進入化學發 光偵測器404中,並與反應室内之臭氧混合。臭氧係藉習 用臭氧發生器產生,如所示具有流量限制器4〇8。於反應 1内’ NO與〇3係如上述反應,以產生受激之N〇2 *分子, 其會發射寬廣譜帶之光,中心在1200毫微米處。一種極爲 敏感之PMT 410 (例如,偵測器,得自EC〇物理儀器公司 (Zurich,SwitZerland))係偵測經過濾色鏡之發射,該濾色鏡係用 以排除具有非所需波長之光子。PMT 410係以光子計算模式 操作’並藉由信號調節器412控制與處理。然後將信號館 入電腦414,其係監控]^〇2*化學發光信號,及使用輸出^ 接至抛光機(未示出),控制抛光程序。 (請先閱讀背面之注意事項寫本頁) --------訂--------- 經濟部智慧財產局員工消費合作社印製 -22- 557356 A7、 Explanation of invention (13 The solution printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a fun solution, which was contacted by a semi-permeable hydrophobic film. This film allows ammonia gas from the slurry to pass through, changing the impotence of the internal electrode solution. Electrochemical monitoring. This method can detect ammonia down to 5xl0_7 Molar concentration I, which is less than 30 seconds at high concentrations, but it can take up to 1-3 minutes at low concentrations. It is suitable for many applications, However, it is not suitable for the detection of this specific CMP endpoint. Fluorometric measurement Another way to detect ammonia in the liquid phase is to use a composite reagent that will impart fluorescent species when contacted with ammonia. The reagent contains phthalic acid (OPA) and a sulfite that acts as a reducing agent (see z. Genfa et al., &Quot; Measurement of Fluorine in Water-Injected Ions in a Flow Injection System ", such as chem, Volume 61, Page 408, 1989). The reaction products are highly fluorescent and can be detected using emission spectroscopy at concentrations down to 2x10_8 Molar. However, this method can take up to 10 minutes, Can reach To the full, it is not suitable for this CMP application again. The measure of chemiluminescence due to the reaction of ammonia with hypobromite in the test solution has also been performed using a photomultiplier tube with an amplifier (see also others etc. People, using flow injection analysis and chemiluminescence analysis to determine ammonium ions in rain and fog water, Anal Chem., Vol. 65, p. 3489, I " 3). However, this method does not have all The sensitivity required to monitor the ammonia produced during CMP polishing of nitrides in this application. The response time of this method is too slow to provide on-the-spot real-time program control. Ammonia gas extraction from slurry _____ -16- This paper has been used in China National Standard (CNS) A4 specification ⑵G x 297 Public Love 1 '— · 1— (Please read the precautions on the back @ write this page first) — — — — # 557356 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (14 is for detecting and monitoring ammonia in the form of gas, so that methods such as mass spectrum can be used, so it will come from the polishing device. (Not shown) The slurry is pumped through the ammonia extraction unit 300 shown in Fig. 4. The extraction unit 300 is composed of polypropylene microporous hollow fiber 302, which is obtained from a Liqui-Cel contactor (type 2.5x8, removed by Hoechst) Made by Celanese). Fiber 302 allows gas but does not allow liquid to pass from the outside to the inside of the fiber. The slurry is pumped in at 304, passes through extraction unit 300 on the outside of fiber 302, and leaves at 306. Dry and clean The gas (from a dryer containing an ammonia filter and optionally a NOx filter to remove it) is pumped into 308 through the fiber and exits at 310 with a gas stream 312 containing ammonia. The carrier gas is pumped at a reduced pressure of about 30 Torr to help the ammonia be transported from the slurry through the fibers and into the gas stream. Decompression also increases the overall flow rate, which helps reduce response time to measure changes in ammonia concentration. The ammonia-containing gas stream 312 obtained from the extractor 300 can then be analyzed and the end point detection of the target film removed can be monitored. Gas-phase chemical analysis, such as standard mass spectrometry, can be sensitive to the south and has a fast response time, which is desirable for endpoint detection. However, as the slurry is sampled, there is substantial interference from water vapor, which, although only higher by 1 atomic mass unit (AMU), is abundantly present. During electron impact ionization, water mass 18 may lose one chlorine, resulting in a 0Η ion with mass 17, which has the same mass as NΗ; 3+. Therefore, the ammonia signal from the slurry can be masked very effectively, so endpoint detection becomes impossible. After light scattering in ammonia gas has been extracted from the slurry, it can be mixed with hydrochloric acid vapor. 17- Sheet paper standard (CNS) A4 specification (210X 297 mm) (Please read the notes on the back first and fill in (This page) rl ^ y ^ — I ----- Order --------- # · 557356 Printed Agriculture A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ______B7 _ V. Description of Invention (15), and Monitor the formation of ammonium chloride solid particles for detection according to the following reaction formula: NH3 (g) + HC1 (g) + nH2 0 NH4 C1 (H2 0) n (s) The device used for this monitoring system is Shown in Figure 5. The ammonia-containing gas stream 312 from Fig. 4 is mixed with a gas stream 402 containing a known concentration of gaseous HC1 and having a well-controlled humidity. Upon mixing, ammonia and hydrochloric acid vapor react immediately to form solid ammonium chloride particles 404. The amount of ammonium gaseous gas produced is measured using a laser beam 406, such as a helium-neon laser, by monitoring the macroscopic scattering obtained from the particles 404. Figure 6 illustrates how to monitor scattering. The scattered photons that strike the particles 404 by the laser beam 406 are detected by the photomultiplier tube 502. It is preferred to use a narrative collection system 504 'to improve the efficiency of the southern light collection. The sensitivity of this technique can be achieved using a mechanical stop 408 (such as the Stanford Research System Model SR450) in Figure 5 and a lock-in amplifier (not shown; for example, Stanford) synchronized with an interrupter that provides phase sensitivity Research system SR810). When the wafer is being polished, the amount of scattered light is directly proportional to the ammonia concentration in the slurry. This reaction to form solid particles is very fast because it is a simple acid-test reaction and is selective for ammonia. , Because very few gas molecules behave like experiments. This reaction occurs in less than 1 second, and it is very suitable for the endpoint detection system as described. It should be noted that the light scattering methods and devices described are not limited to use with monitoring CMP endpoints. If the film overlying is removed from the film underneath, such as dry etching (such as reactive ion etching), then the lower -18- This paper size applies to the national standard (CNS) A4 size ⑽ x 297 ) — ~ ^ _ .---- ^ -------- ^ ---------. (Please read the notes on the back to write this page) 557356 A7 B7__ — V. Invention Note (16) The square film (meaning the barrier layer in the last name) may be selected to produce a marked chemical reaction product when in contact with the etchant. The reaction products of the etching process can be sampled by the method described above to monitor the content of the labeled chemical reaction products. This light scattering method can also be used to detect substances in liquids at very low concentrations (such as 丨 〇χ 〇-5m or lower), such as ammonia, by extracting chemical substances in gaseous form from the liquid, so that This gas is mixed with another substance to form solid particles, and the amount of solid particles is monitored, for example by scattering light. Transformed into nitric oxide (1) The interference of 0H of water fragments can be avoided by converting the ammonia in the ammonia-containing gas stream from the extraction unit 300 (shown in Figure 4) into individual products with different masses than 0H, and By detecting the individual products, ammonia is detected indirectly. One example is the use of a catalyst converter as shown in Figure 7 to convert ammonia to nitric oxide (NO). The ammonia-containing gas stream 312 enters the catalyst converter 400, such as an array of stainless steel pipe parts, which has a large enough surface area for a sufficient amount of gas to be converted. The system is heated to 800C. This conversion, called the Oswald process, is illustrated by the following reaction: 4 NH3 (g) + 5 02 (g) — 4 NO (g) + 6 Η 2 Ο (g) It should be noted that the The carrier gas preferably contains oxygen (02) instead of air, because air contains about 15 ppm and a nitrogen isotope (7N15) 2 of mass 30, which is the same mass as NO. Mass spectrum The gas stream 402 exiting the converter 400 contains NO and enters the mass spectrometer system 404. The bypass valve 406 is used to adjust the flow of the airflow and allows substantial adjustment (please read the note on the back? Matters @ write this page) rl installation ---- order --------- Ministry of Economics wisdom Printed by the Consumers ’Cooperative of the Property Bureau μ® National Standard (CNS) A4 Specification (21G χ 297 Public Love)-557356 A7 B7 Printed by the Consumers’ Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (17) Body Flow through Extraction Unit 300 and catalyst converter 400, resulting in a fast measurement of response time without overloading the mass spectrometer 404 with the incoming sampling gas containing NO gas. The mass spectrometer system 404 includes a hollow chamber 408, which contains a quadrupole mass spectrometer, and collides with an ionization source 410, such as the Stanford Research System Residual Gas Analyzer RGA200. This mass spectrometer has a dynamic range of eight orders of magnitude and can detect NO down to about 10 ppb. This mass spectrometer is gated to detect ions only at mass / charge 30, and the signal is available on a computer to provide real-time monitoring. REMPI-TOF Mass Spectroscopy An alternative to mass spectroscopy is resonance enhanced multi-photon ionization (REMPI) spectroscopy, which has been described as true and easy to detect the presence of nitric oxide (see DC Jacobs et al.) Human, "1 + 1 resonance enhanced MPI spectrum reduction to cluster distribution: application to the NO Α2 Σ + _ χ2Π system", J. Chem. Phys. Vol. 85, p. 5469 (1986). In Figure 8 In the process, the NO-containing gas stream 402 leaving the converter 400 passes through the bypass valve 502 similar to that described above and enters the time-of-flight (TOF) mass spectrometer 500. The pulse molecular beam valve 504 transforms the gas stream 402 into a pulsed gas stream 506. The pressure of the gas stream 402 is about 30 Torr, which is sufficient to form a beam when entering the chamber of the spectrometer, but may not expand at a supersonic temperature. The pulse valve 504 is timed to coordinate with the pulsed laser beam 508, which is Selectively ionize NO from the pulsed gas stream 506. The laser beam 508 can be, for example, the output of a laser system with a frequency-doubling Q-converted Nd: YAG laser that operates at 20 Hz to pump titanium Sapphire (Ti: S) tunable laser. Ti: S laser system It is rounded to 904 nanometers, and its output is doubled by using a BBO nonlinear crystal. The second harmonic is at 452 nanometers, and the fourth -20- This paper size applies to China National Standard (CNS) A4 specifications. (210 X 297 mm) (Please read the notes on the back @write this page first) Binding ---- Order --------- # 557356 A7 -------- R7______ V. Invention It shows that (18) harmonics are at the desired wavelength of 226 nm, or are excited by photons of NO from one of the ground states. The ionization system described has proved extremely effective, in which the total detection sensitivity is reduced to 1.0 × 10 -11 Torr (see M. Asscher et al., “Vibration and rotation energy distribution of NO scattered from the surface of Pt (in) crystal: detection by two-photon ionization”, Phys Rev. Lett Vol. 49, Page 982. The pulse ionizing gas flow 506 is then accelerated by using the electric field generated by the electrode 51. The plasma travels through the length of the drift tube 512 to the detector 514. The running time of the ion is determined by its mass. Proportional, and therefore the time gating of the arrival signal, is only used to measure the signal from N0. The resulting signal is Boxcar averager 516 (available from Stanford System Model SR250) to 'average' and direct to computer for processing (not shown). Based on static gas measurement 'expects this technology to have a sensitivity of 10 ppb and response time Conversion to Nitric Oxide The ammonia in the ammonia-containing gas stream obtained from the extraction unit 300 (shown in Figure 3) is converted into individual products, and by detecting individual products, ammonia is detected indirectly. One example is the use of a catalyst converter as shown in Figure 9 to convert ammonia to nitrogen monoxide (NO). The ammonia-containing gas stream 312 enters the catalyst converter 400, such as an array of stainless steel pipe parts, which has a surface area large enough for a sufficient amount of ammonia molecules to be transformed, and it is heated to 800 ° C. This conversion, called the oswajd process, is illustrated by the following reaction: 4 NH3 (g) + 5 02 (g) ^ 4 NO (g) + 6 H20 (g) The carrier gas should be dry and clean, so it can achieve rapid Response time and the most -21-This paper size applies Chinese National Standard (CNS) A4 specification (21G x 2W public director) '-' '' (Please read the precautions on the back first to write this page) r; 丨 装 # · Economy Printed by the Ministry of Intellectual Property Bureau's Consumer Cooperatives 557356 A7 B7__ V. Description of the invention (19) Low (background NO. The conversion of NO plus N0 is measured by chemiluminescence, which enables detection at sub-ppb levels and avoids Interference from other chemicals. Chemiluminescence detection (CLD) The phenomenon of chemiluminescence occurs when an excited molecule 'generated from a chemical reaction shifts from an excited state to a lower state that allows it to emit light. Chemiluminescence can be used to Detect the presence of ammonia (indirectly by detecting nitric oxide), in this case according to the following formula: N〇 (g) + 〇3 (g) no2 * (g) + o2 N02 * (g) —N 〇2 (g) + hv where the emitted light (photons) is detected by a highly sensitive photomultiplier tube (ρΜχ) The device used for chemiluminescence detection (CLD) is shown in Figure 9. The NO-containing gas stream 402 leaving the converter 400 passes through the flow limiter 406, enters the chemiluminescence detector 404, and is mixed with ozone in the reaction chamber. Ozone is generated by a conventional ozone generator, as shown, with a flow limiter 408. In reaction 1, 'NO' and 〇3 are reacted as described above to produce stimulated molecules of No2 *, which will emit broadly. The light of the band is centered at 1200 nanometers. A very sensitive PMT 410 (e.g., detector from ECrich Physical Instrument Company (Zurich, SwitZerland)) detects emission through a color filter, which is used for In order to exclude photons with undesired wavelengths, PMT 410 operates in photon calculation mode and is controlled and processed by signal conditioner 412. The signal is then stored in computer 414, which is monitored] ^ 〇2 * Chemiluminescence signal, And use the output ^ Connect to a polishing machine (not shown) to control the polishing process. (Please read the precautions on the back to write this page) -------- Order --------- Ministry of Economy Printed by the Intellectual Property Bureau Staff Consumer Cooperatives-22- 557356 A7
閱 讀 背 面 之 注 意 事Read the notes on the back
I έ 557356 A7 B7 五、發明說明(21 ) 使用脈衝氣相進樣之傅立葉轉換微波光譜學,具有極端 高之偵測敏感度與化學選擇性,並可精確地度量亞ppb含 量下之污染物,及克服伴隨著質量光譜法之遮蔽問題(參 閱Harmony等人,”小型熱噴嘴傅立葉轉換微波光譜計",Rev. Sci. Instrum.,第 66 卷,第 5196 頁(1995),以及 Suenram 等人,,•透納 運動對於耕之四極超精細結構之作用",J. Mol. Spectrosc.,第137 卷,第 127 頁(1989))。 將得自萃取器300之含氨氣流312 (示於圖4中)引導至傅立 葉轉換微波光譜計400,示於圖11中。旁通閥402係用以調 整氣流進入脈衝閥404中之流量。旁通閥402允許實質整體 流經萃取單元300,造成快速度量回應時間,而不會使光 譜計400被入射之含氨空氣流之取樣氣體超載。 脈衝閥404係使來自氣流312之試樣氣體注入光譜計眞空 室中,其中重複率約20 Hz,且閥開啓時間爲1毫秒。脈衝 氣體進入室中且超音速地膨脹,於是冷卻至約1〇度K。高 強度微波輻射(對氨爲23.786 GHz)亦在20 Hz下脈衝(經計時 以與脈衝氣體一致)進入室中,從微波來源406至傳送器/ 接受器408。氨分子會吸收輻射,並以自由感應衰變程序 再輻射。然後,藉由偵測器410將此衰變數字化並轉變, 以獲得頻域信號。監測信號之強度,以測定存在於漿液中 之氨量。 低限光電離質量光譜 於此方法中,係使用氨之低限光電離及接著藉四級質譜 分析器偵測,如圖12中所示。離開示於圖4中之萃取器300 _-24-_ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項寫本頁) 裝--------訂--------- #. 經濟部智慧財產局員工消費合作社印制衣 557356 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(22 ) 之含氨氣流312,係被引導經過旁通閥502至光電離質譜儀 500 (例如Syagen技術TPMS-100S型)。在接近1托壓力下之試 樣區域504,係以氪共振燈506照射,此氪共振燈具有兩條 主要眞空紫外線條在10.0 eV與10.6 eV處。在10.6 eV處之線條 ,係稍微高於氨電離電位(IP) 10.18 eV,而正好低於水之ip < 在12.6 eV下)。由於照射所形成之離子,係被引導經過小孔 口,進入高眞空室508中,並以修改過之四極質譜儀51〇偵 測。此質量分析係用以區別來自具有低電離電位之烴物種 之干擾,該物種可容易地被氪燈電離。預期會有優於 10 ppb之偵測敏感度。 使用光電離代替較爲習用之電子碰撞電離之附加優點, 係爲防止水碎裂,水碎裂會導致碎片離子(OH),其質量爲 17,與氨爲相同質量。此外,此光子能量係低於其他可能 存在之氣相分子之電離電位,其包括N2、〇2、C02、CO, 及最重要的是H20。 應指出的是,所述之低限光電離質量光譜與傅立葉轉換 微波光譜學、方法及裝置,並不限於與監測CMP終點一起 使用。若覆蓋在上之薄膜係自其下方薄膜藉蚀刻移除,例 如乾蝕刻(譬如反應性離子蝕刻),則其下方薄膜(意即蚀 刻阻擋層)可經選擇爲在與蚀刻劑接觸時會產生標記化學 反應產物者。蝕刻程序之反應產物可藉由任何此等方法取 樣,以監測標記化學反應產物之含量。 低限光電離質量光譜與傅立葉轉換微波光譜方法,亦可 用以偵測在液體中極低(例如1.0X 1〇_5Μ或更低)濃度下之物 -25-I. 557356 A7 B7 V. Description of the invention (21) Fourier transform microwave spectroscopy using pulsed gas phase injection has extremely high detection sensitivity and chemical selectivity, and can accurately measure pollutants at sub-ppb levels And overcome the shadowing problems associated with mass spectroscopy (see Harmony et al., "Small Thermal Nozzle Fourier Transform Microwave Spectrometer", Rev. Sci. Instrum., Vol. 66, p. 5196 (1995), and Suenram et al. People, “Effect of Turner Movement on the Quadrupole Ultrafine Structure of Cultivation”, J. Mol. Spectrosc., Vol. 137, p. 127 (1989)). Ammonia-containing gas stream 312 from extractor 300 ( (Shown in Figure 4) is directed to the Fourier Transformed Microwave Spectrometer 400, shown in Figure 11. Bypass valve 402 is used to adjust the flow of gas into the pulse valve 404. Bypass valve 402 allows substantially whole flow through the extraction unit 300 This results in a quick measurement of the response time without overloading the spectrometer 400 with the sampling gas of the incoming ammonia-containing air stream. The pulse valve 404 injects the sample gas from the gas stream 312 into the empty chamber of the spectrometer, where the repetition rate is about 20 Hz, and the valve opening time is 1 millisecond. The pulsed gas enters the chamber and expands at supersonic speed, so it cools down to about 10 degrees K. High intensity microwave radiation (23.786 GHz for ammonia) is also pulsed at 20 Hz (after The timing is in accordance with the pulsed gas) into the chamber, from the microwave source 406 to the transmitter / receiver 408. The ammonia molecules absorb the radiation and re-radiate it in a free induction decay process. The decay is then digitized by the detector 410 And transform to obtain a frequency-domain signal. Monitor the intensity of the signal to determine the amount of ammonia present in the slurry. Low-limit photoionization mass spectrum In this method, the low-limit photoionization of ammonia is used and then analyzed by fourth-order mass spectrometry Detector detection, as shown in Figure 12. Leave the extractor 300 shown in Figure 4 _-24-_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the back first (Precautions written on this page) Outfitting -------- Order --------- #. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 557356 A7 B7 Employees’ Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printing V. Ammonia-containing gas flow 312 of invention description (22), It is guided through the bypass valve 502 to the photoionization mass spectrometer 500 (for example, Syagen technology TPMS-100S). The sample area 504 at a pressure close to 1 Torr is illuminated by a chirped resonance lamp 506, which has two The main hollow UV strips are at 10.0 eV and 10.6 eV. The lines at 10.6 eV are slightly higher than the ammonia ionization potential (IP) 10.18 eV, and just below the water ip < at 12.6 eV). Due to the ions formed by the irradiation, they are guided through the small aperture, into the high-air chamber 508, and detected by a modified quadrupole mass spectrometer 51. This mass analysis is used to distinguish interference from hydrocarbon species with low ionization potential, which can be easily ionized by krypton lamps. Expect a detection sensitivity of better than 10 ppb. The additional advantage of using photoionization instead of the more conventional electron impact ionization is that to prevent water fragmentation, water fragmentation will cause fragment ions (OH) with a mass of 17, which is the same mass as ammonia. In addition, this photon energy is lower than the ionization potential of other gas molecules that may exist, including N2, 02, C02, CO, and most importantly H20. It should be noted that the low-limit photoionization mass spectrum and Fourier transform microwave spectroscopy, methods, and devices are not limited to use with monitoring CMP endpoints. If the overlying film is removed by etching from the underlying film, such as dry etching (such as reactive ion etching), the underlying film (meaning the etch barrier layer) can be selected to produce a contact with the etchant. Those who mark chemical reaction products. The reaction products of the etching process can be sampled by any of these methods to monitor the content of the labeled chemical reaction products. Low-limit photoionization mass spectrometry and Fourier transform microwave spectroscopy can also be used to detect substances at extremely low concentrations (such as 1.0X 10-5M or lower) in liquids. -25-
(請先閱讀背面之注意事項寫本頁) 項m 裝 訂--------- # A7 _______B7 五、發明說明(23 ) 質,链 斤 取g如氣,其方式是自液體中萃取以氣體形式存在之化 子物處,並採用上述步騍,以偵測呈氣體形式之氨。 概略古> ρ 从 已馬述能夠偵測覆蓋在另一薄膜上之任何型 ^薄膜之移除終點之方法及有關聯裝置。本發明係提供當 广膜正被移除時之當場終點偵測,且具有高偵測敏感度及 核端快速之回應時間。 、&雖然本發明已以特殊具體實施例爲觀點加以説明,但鑒 =則述説明,得以明瞭許多替代方式、修正及變型將爲熟 :此藝者所顯而易見的。因此,本發明係意欲涵蓋所有此 等落在本發明精神與範圍及隨文所附申請專利範圍内之替 代方式、修正及變型。 (請先閱讀背面之注意事項却填寫本頁) 裝------ tr---------# 經濟部智慧財產局員工消費合作社印製 -26- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)(Please read the notes on the back first to write this page) Item m Binding --------- # A7 _______B7 V. Description of the Invention (23) Quality, the chain weight is taken as g, which is extracted from the liquid Use the steps described above to detect ammonia in gaseous form. Outline > ρ From the method and related devices that can detect the removal end of any type of film overlaid on another film. The present invention provides on-the-spot end point detection when the wide film is being removed, with high detection sensitivity and fast response time at the nuclear end. &Amp; Although the present invention has been described from the perspective of a specific embodiment, the description explains that many alternatives, modifications, and variations will be familiar: obvious to the artist. Therefore, the present invention is intended to cover all such alternatives, modifications, and variations as fall within the spirit and scope of the present invention and the scope of the patents attached herewith. (Please read the notes on the back first and fill in this page) Packing ------ tr --------- # Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -26- This paper size applies to China Standard (CNS) A4 specification (210 X 297 mm)
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US7360398A | 1998-05-06 | 1998-05-06 | |
US09/073,602 US6180422B1 (en) | 1998-05-06 | 1998-05-06 | Endpoint detection by chemical reaction |
US09/073,604 US6126848A (en) | 1998-05-06 | 1998-05-06 | Indirect endpoint detection by chemical reaction and chemiluminescence |
US09/073,601 US6194230B1 (en) | 1998-05-06 | 1998-05-06 | Endpoint detection by chemical reaction and light scattering |
US09/073,605 US6066564A (en) | 1998-05-06 | 1998-05-06 | Indirect endpoint detection by chemical reaction |
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TWI580953B (en) * | 2011-12-14 | 2017-05-01 | 微晶片科技公司 | Method and apparatus for detecting smoke in an ion chamber |
US9805572B2 (en) | 2011-10-06 | 2017-10-31 | Microchip Technology Incorporated | Differential current measurements to determine ion current in the presence of leakage current |
US9823280B2 (en) | 2011-12-21 | 2017-11-21 | Microchip Technology Incorporated | Current sensing with internal ADC capacitor |
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Cited By (3)
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US9805572B2 (en) | 2011-10-06 | 2017-10-31 | Microchip Technology Incorporated | Differential current measurements to determine ion current in the presence of leakage current |
TWI580953B (en) * | 2011-12-14 | 2017-05-01 | 微晶片科技公司 | Method and apparatus for detecting smoke in an ion chamber |
US9823280B2 (en) | 2011-12-21 | 2017-11-21 | Microchip Technology Incorporated | Current sensing with internal ADC capacitor |
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