經濟部智慧財產局員工消費合作社印製 555621 A7 __B7__ 五、發明説明（i ) 發明背景 發明領域 本發明是有關於一晶圓拋光設備之拋光終止點檢測裝 置，明確地說是有關於以化學機械式拋光法（CMP)加以拋光 晶圓之晶圓拋光設備之拋光終止點檢測裝置。 相關技術說明 爲了拋光一絕緣膜或金屬膜，在大型積體電路（LSI)之 製程中常使用CMP。在這製程中，需要準確判定一拋光終止 點。 一 CMP之習知實例爲日本專利申請公開案號 2000- 1 869 18，該申請案發表一種方法，當中施加光源在晶 圓之一拋光面上並測量反射在拋光面上光線之光譜強度分 佈，因此，檢測到一拋光終止點。另一實例爲日本專利申 請公開案號2000- 1 83001，該申請案發表一種方法，當中施 加光線在晶圓之拋光面上並檢測反射在拋光面上光線之顏 色成份，因此，檢測到拋光終止點。仍有另一實例爲一種 方法。當中施加單波長光線在晶圓上，並參考反射光線強 度變化而檢測到拋光終止點。 曰本專利申請公開案號2000- 1 869 18發表一種方法，當 中一透鏡使來自一光源之光線成爲平行光，那就是，被施 加在晶圓拋光面上，而且以一遮光狹縫只選出反射在拋光 面上之零度光線（一般反射光線），因此可測量所分開光線之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 555621 A7 __B7__ V. Description of the Invention (i) Background of the Invention Field of the Invention The present invention relates to a polishing termination point detection device for a wafer polishing equipment, specifically, to chemical machinery Polishing method (CMP) Polishing termination point detection device of wafer polishing equipment for polishing wafers. Description of Related Art In order to polish an insulating film or a metal film, CMP is often used in a large scale integrated circuit (LSI) manufacturing process. In this process, it is necessary to accurately determine a polishing termination point. A known example of CMP is Japanese Patent Application Laid-Open No. 2000-1 869 18, which discloses a method in which a light source is applied to a polished surface of a wafer and the spectral intensity distribution of light reflected on the polished surface is measured. Therefore, a polishing termination point is detected. Another example is Japanese Patent Application Publication No. 2000-1 83001, which discloses a method in which light is applied to the polished surface of a wafer and the color component of the light reflected on the polished surface is detected. Therefore, the termination of polishing is detected point. Still another example is a method. A single wavelength of light is applied to the wafer, and the polishing termination point is detected with reference to the change in the intensity of the reflected light. Japanese Patent Application Publication No. 2000-1869869 published a method in which a lens makes light from a light source become parallel light, that is, it is applied to the polished surface of a wafer, and only a reflection is selected by a light-shielding slit. Zero-degree light (normally reflected light) on the polished surface, so the paper size of the separated light can be measured according to the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page )
-4- 555621 A7 B7 五、發明説明（2 ) 光譜強度分佈。之後，所測量之光譜強度分佈即配裝有事 先已儲存之光譜特性，因此加以檢測拋光終止點。 (請先閲讀背面之注意事項再填寫本頁) 另一方面，日本專利申請公開案號2000- 1 8300 1發表一 種拋光終止點檢測方法，當中，以光線導引器將來自光源 之光線傳導至拋光面，俾能照射拋光面，且因此以光線導 引器將反射在拋光面上之光線傳導至一顏色識別感測器內， 因此加以檢測反射光線之顏色成份。然後，所偵測到之顏 色成份即配裝有事先已儲存之參考顏色成份，因此加以檢 測拋光終止點。 經濟部智慈財產局5貝工消費合作社印製 然而，日本專利申請公開案號2000- 1 869 1 8之拋光終止 點檢測方法具有一項問題，該問題中需要照射拋光面之光 線嚴格爲難以作光學調整之平行光線。而且，因一般之反 射光線以一稍微傾斜反射面表面或一聚光系統之像差，在 遮光狹縫外面形成一影像，故降低通過狹窄遮光狹縫之一 般反射光線量，且因此降低用以檢測之光線強度，而造成 不良敏感度。而且，拋光終止點檢測方法亦需要一使用分 光束器將所施加之光線和反射光線分開之照射/光接收光學 系統，因此，未有效率地加以使用光線。 日本專利申請公開案號2000- 1 83601中所發表之拋光終 止點檢測方法亦有一缺點，該缺失中因檢測到顏色成份未 以顏色識別感應器分開反射光線而無法精確分析RGB之顏色 成份。結果，無法準確檢測拋光終止點。 而且，在利用一單波長光線加以檢測拋光終止點之方 法中，因藉由參考來自一單一來源之資料加以檢測拋光終 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5- 555621 A7 _ B7 _ 五、發明説明（3 ) 止點，故常發生錯誤判定。 發明槪要 本發明之一項目的在提供能準確檢測一拋光終止點之 晶圓拋光設備之一拋光終止點檢測裝置。 爲達成上述目的，本發明提供一晶圓拋光設備之拋光 終止點檢測裝置，包含：一光源，一在照明端之光線導引器， 該光線導引器將自光源所輸出之光線加以傳導至一晶圓之 拋光面上，俾能照射拋光面；一在光線接收端之光線導引器 。在已經從照明端之光線導引器加以引導後，光線導引器 將反射在晶圓拋光面上之光線加以傳導至晶圓之拋光面上； 一用以將由在光線接收端之光線導引器所傳導之光線分成 相對應波長之光線的分光鏡；一用以將已被分光鏡分光之光 線轉換成對應各波長光線強度之電氣訊號並將光線轉換爲 所對應波長之光線強度訊號的光電轉換裝置；以及根據已從 光電轉換裝置所輸出之對應波長之光線強度訊號加以判定 一拋光終止點之終止點判定裝置。 根據本發明，使用照明端之光線導引器和光線接收端 之光線導引器加以傳導照明光線並拾取反射光線；因此，能 更有效率地使用光線且與一使用光束分光器之情況比較， 改善了檢測準確度。而且，拋光終止點檢測裝置亦能防止 檢測準確度因偏置之光對準而降低。而且，已被拾取之反 射光線由分光鏡所分開，並根據所對應分開光線之波長之 光線強度分佈加以檢測拋光終止點，可精確分析反射光線 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐） I I- I - ! : I —II _y ! m I (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -6- 555621 A7 _B7_ 五、發明説明（4 ) 之顏色成份，且因此能準確檢測拋光終止點。 (請先閱讀背面之注意事項再填寫本頁) 爲達成上述目的，本發明提供一種晶圓拋光設備之拋 光終止點檢測方法，在該方法中，壓著晶圓，頂住一拋光 墊且當供應漿水時，藉彼此相對滑動晶圓和拋光墊時將晶 圓加以拋光；其中，施加白色光線在晶圓上，從通過形成在 拋光墊上之一窗口之光源將該晶圓加以拋光，並對反射在 晶圓上之光線實施分光分析，因此加以檢測晶圓之拋光終 止點。 根據本發明，施加白色光線在一正在進行拋光之晶圓 上，並對反射光線實施分光分析，俾能檢測晶圓之拋光終 止點。因此，與以一單波長光線加以檢測拋光終止點之情 況比較，可使用更多之資料加以檢測拋光終止點，且因此， 可準確地檢測拋光終止點。 經濟部智慧財產局員工消費合作社印製 爲達成上述目的，本發明提供晶圓拋光設備之拋光終 止點檢測方法，其中之分光分析包含以下步驟：測量反射光 線之光線強度光譜；得到反射光線之光線強度光譜和事先已 得到之一參考試樣之反射光線之光線強度光譜間之比率；並 根據所得到之比率加以檢測拋光終止點。 根據本發明，測量反射光線之光線強度光譜，並得到 反射光線之光線強度光譜和來自事先已得到之參考試樣之 反射光線之光線強度光譜間之比率，然後，根據該比率加 以檢測拋光終止點。因此，本發明比一習知裝置和方法甚 至能更準確地檢測拋光終止點。 而且，爲達成上述目的，本發明提供晶圓拋光設備之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 555621 A7 ___ B7 五、發明説明（5 ) 拋光終止點檢測方法，其中，測量反射光線量，並終止光 源之亮度，使反射光線量固定。 (請先閲讀背面之注意事項再填寫本頁) 根據本發明，可修正由於表面條件不同之窗口之透射 率變化所造成反射光線量之變化，並永遠維持固定之反射 光線量，因此可永遠準確地檢測拋光終止點。 爲達成上述目的，本發明提供晶圓拋光設備之拋光終 止點檢測方法，其中，根據已修正之光源亮度加以修正來 自參考試樣之反射光線之光線強度光譜。 根據本發明，根據光源亮度變化加以修正來自參考試 樣之反射光線之光線強度光譜；因此，甚至比習知方法和裝 置更能準確地加以檢測拋光終止點。 而且，爲達成上述目的，本發明提供晶圓拋光設備之 拋光終止點檢測方法，其中，藉由改變要被供應給光源之 電量，加以修正光源之亮度。 根據本發明，藉由改變要被供應給光源之電量，加以 修正光源之亮度。 經濟部智慧財產局員工消费合作社印奴 爲達成上述目的，本發明提供晶圓拋光設備之拋光終 止點檢測方法，其中，經由以下步驟加以修正光源之亮度： 提供多數不同亮度之光源；並選取其中之一光源加以照亮。 根據本發明，提供不同亮度之多數光源，並選取其中 之一光源加以照亮，俾能修正光源亮度。 如上述，根據本發明，已被施加在晶圓拋光面上之反 射光線是由分光鏡加以分開，並根據分光線之對應波長之 光線強度分佈加以判定拋光終止點。因此，可精確分析反 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 555621 A7 B7 五、發明説明（6 ) (請先閲讀背面之注意事項再填寫本頁) 射光線之顏色成分並能準確地檢測拋光終止點。而且，傳 導所施加之光線，並利用照明端之光線導引器和光線接收 端之光線導引器加以拾取反射光線；因此，更有效率地使用 光線並與使用一光束分光器之情況比較，改善了檢測準確 度，且同時有效防止由於光學對準之位移而降低檢測之準 確度。 而且，根據本發明，施加白光在一拋光中之晶圓上， 並對反射光線實施分光分析，俾能檢測晶圓之拋光終止點 。因此，與以一單波長光線加以檢測拋光終止點之情況比 較，可使用更多之資料加以檢測拋光終止點，且因此，可 準確地檢測拋光終止點。 而且，可修正由於表面條件不同之窗口之透射率變化 所造成反射光線量之變化，並永遠維持固定之反射光線量； 因此可永遠準確地檢測拋光終止點。 圖示簡單說明 經濟部智慧財產局員工消资合作社印製 本發明之性質，以及其其它目的和優點，將參考隨圖 說明如下。其中，在整份圖中，相同之參註字母代表相同 或類似之部件，且其中： 第1圖爲·一表示在本發明一第一實施例中，一晶圓拋光 設備之拋光終止點檢測裝置結構之方塊圖； 第2圖爲一表示照明/光線接收系統結構之示意圖； 第3圖爲一表示分光鏡（多色計）結構之另一方塊圖； 第4圖仍爲一表示在本發明一第二實施例中，一晶圓拋 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） -9 - 555621 A7 ___ B7_ 五、發明説明（7 ) 光設備之拋光終止點檢測裝置結構之另一方塊圖； (請先閱讀背面之注意事項再填寫本頁) 第5圖爲一表示利用本發明拋光終止點檢測方法加以處 理晶圓之步驟的流程圖； 第6圖爲一表示一光源亮度修正方法步驟之流程圖； 第7圖爲一表示另一實施例中，亮度調整機構之結構圖； 第8圖表示仍爲另一實施例中，亮度調整機構之結構圖； 以及 第9圖表示還爲另一實施例中，亮度調整機構之結構圖 〇 主要元件對照表 10:晶圓拋光設備 12:拋光終止點檢測裝置 14:滾筒 16:拋光墊 18:晶圓握持頭 20:噴嘴 經濟部智慧財產局員工消费合作社印製 22:控制單元 24:觀視孔 26:透明窗 28:照明/光線接收光學系統 3(h分光導引器 30A:光線導引器 30B:光線導引器 本紙張尺度適用中國國家標隼「CNS ) A4規格（210X297公釐) ' -10- 555621 經濟部智慈財產局員工消费合作社印製 A7 B7五、發明説明（8 ) 3 2:光源單元 32A:光源燈泡 32B:亮度調整機構 3 4:分光鏡 36:電腦 38:透鏡筒 40:聚光透鏡 42:入射狹縫 44:平面鏡 46:繞射光柵 48:陣列光線接收裝置 50·.多工器 58A-58G:光源燈泡 60:開關 62:光源燈泡 64:導軌 6 6:滑動塊 6 8:光源燈泡 70:阻擋器 W:晶圓 W1:晶圓 W2:晶圓 W3:晶圓 D1:暗度成份 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） ·---- (請先閲讀背面之注意事項再填寫本頁)-4- 555621 A7 B7 V. Description of the invention (2) Spectrum intensity distribution. After that, the measured spectral intensity distribution is equipped with previously stored spectral characteristics, so the polishing end point is detected. (Please read the precautions on the back before filling in this page) On the other hand, Japanese Patent Application Publication No. 2000-1 8300 1 has published a polishing termination point detection method, in which a light guide is used to transmit light from a light source to The polished surface can illuminate the polished surface, and therefore the light reflected on the polished surface is transmitted to a color recognition sensor by a light guide, so the color component of the reflected light is detected. Then, the detected color component is equipped with a reference color component that has been stored in advance, so the polishing end point is detected. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, 5 Bayong Consumer Cooperatives. However, the method for detecting the polishing termination point of Japanese Patent Application Publication No. 2000-1869869 has a problem, in which it is difficult to illuminate the light on the polished surface. Parallel light for optical adjustment. Moreover, because the general reflected light forms an image outside the light-shielding slit with a slight tilt of the reflecting surface or the aberration of a light-condensing system, the amount of general light reflected through the narrow light-shielding slit is reduced, and therefore the Detected light intensity, resulting in poor sensitivity. Moreover, the polishing termination point detection method also requires an irradiation / light receiving optical system that uses a beam splitter to separate the applied light and the reflected light, and therefore, the light is not used efficiently. The polishing end point detection method disclosed in Japanese Patent Application Laid-Open No. 2000-1 83601 also has a disadvantage. In this deficiency, the color components of RGB cannot be accurately analyzed because the detected color components are not reflected by the color recognition sensor to separate the reflected light. As a result, the polishing termination point cannot be accurately detected. Moreover, in the method of detecting the polishing termination point by using a single-wavelength light, because the reference paper is used to detect the polishing end point, the final paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -5 -555621 A7 _ B7 _ V. Description of the invention (3) The dead point, so the error judgment often occurs. Summary of the Invention An item of the present invention is to provide a polishing termination point detection device for a wafer polishing apparatus capable of accurately detecting a polishing termination point. In order to achieve the above object, the present invention provides a polishing termination point detection device of a wafer polishing device, including: a light source, a light guide at the illumination end, and the light guide transmits light output from the light source to A polished surface of a wafer can illuminate the polished surface; a light guide at the light receiving end. After being guided from the light guide at the illumination end, the light guide transmits the light reflected on the polished surface of the wafer to the polished surface of the wafer; one is used to guide the light from the light receiving end The light transmitted by the device is divided into light beams with corresponding wavelengths; a photoelectric device for converting the light that has been split by the beamsplitter into an electrical signal corresponding to the light intensity of each wavelength and converting the light into a light intensity signal of the corresponding wavelength A conversion device; and a termination point determination device for determining a polishing termination point based on a light intensity signal of a corresponding wavelength that has been output from the photoelectric conversion device. According to the present invention, the light guide at the illuminating end and the light guide at the light receiving end are used to conduct the illumination light and pick up the reflected light; therefore, the light can be used more efficiently and compared with a case where a beam splitter is used, Improved detection accuracy. Moreover, the polishing end point detection device can prevent the detection accuracy from being lowered due to the biased light alignment. Moreover, the reflected light that has been picked up is separated by a beam splitter, and the polishing termination point is detected based on the light intensity distribution of the wavelength of the corresponding separated light, which can accurately analyze the reflected light. The paper size applies the Chinese National Standard (CNS) 8-4 specifications. (210X297 mm) I I- I-!: I —II _y! M I (Please read the notes on the back before filling out this page) Order printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economics-6- 555621 A7 _B7_ Five 2. The color component of the description of the invention (4), and therefore can accurately detect the polishing termination point. (Please read the precautions on the back before filling this page) In order to achieve the above purpose, the present invention provides a method for detecting the polishing termination point of a wafer polishing device. In this method, a wafer is pressed against a polishing pad and when When the slurry is supplied, the wafer is polished by sliding the wafer and the polishing pad against each other; wherein, a white light is applied to the wafer, and the wafer is polished from a light source passing through a window formed on the polishing pad, and Spectroscopic analysis is performed on the light reflected on the wafer, so the polishing termination point of the wafer is detected. According to the present invention, white light is applied on a wafer being polished, and spectroscopic analysis is performed on the reflected light, so that the polishing end point of the wafer cannot be detected. Therefore, compared with the case where the polishing termination point is detected with a single-wavelength light, more information can be used to detect the polishing termination point, and therefore, the polishing termination point can be accurately detected. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs To achieve the above purpose, the present invention provides a method for detecting the polishing termination point of wafer polishing equipment. The spectroscopic analysis includes the following steps: measuring the light intensity spectrum of the reflected light; obtaining the light of the reflected light The ratio between the intensity spectrum and the light intensity spectrum of the reflected light of a reference sample obtained beforehand; and the polishing end point is detected based on the obtained ratio. According to the present invention, the light intensity spectrum of the reflected light is measured, and the ratio between the light intensity spectrum of the reflected light and the light intensity spectrum of the reflected light from the reference sample obtained in advance is obtained, and then the polishing termination point is detected based on the ratio . Therefore, the present invention can detect the polishing termination point more accurately than a conventional device and method. In addition, in order to achieve the above-mentioned object, the present invention provides the paper size of the wafer polishing equipment which is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 555621 A7 ___ B7 V. Description of the invention (5) The polishing termination point detection method, wherein , Measure the amount of reflected light, and terminate the brightness of the light source, so that the amount of reflected light is fixed. (Please read the precautions on the back before filling this page) According to the present invention, the change in the amount of reflected light caused by the change in transmittance of windows with different surface conditions can be corrected, and the fixed amount of reflected light can always be maintained, so it can always be accurate Ground detection end point. In order to achieve the above object, the present invention provides a polishing end point detection method for a wafer polishing apparatus, wherein a light intensity spectrum of reflected light from a reference sample is corrected according to a corrected brightness of a light source. According to the present invention, the light intensity spectrum of the reflected light from the reference sample is corrected according to the change in the brightness of the light source; therefore, the polishing termination point can be detected more accurately than even conventional methods and devices. Further, in order to achieve the above object, the present invention provides a polishing termination point detection method of a wafer polishing apparatus, in which the brightness of a light source is corrected by changing the amount of power to be supplied to the light source. According to the present invention, the brightness of the light source is corrected by changing the amount of power to be supplied to the light source. In order to achieve the above-mentioned object, the Indo slave of the Intellectual Property Bureau of the Intellectual Property Bureau of the Ministry of Economic Affairs provides a method for detecting the polishing termination point of wafer polishing equipment, wherein the brightness of the light source is corrected through the following steps: providing a plurality of light sources with different brightness; and selecting among them One light source to illuminate. According to the present invention, it is possible to correct the brightness of a light source by providing a plurality of light sources of different brightness and selecting one of them to illuminate. As described above, according to the present invention, the reflected light that has been applied to the polished surface of the wafer is separated by a beam splitter, and the polishing termination point is determined based on the light intensity distribution of the corresponding wavelength of the divided light. Therefore, the paper size can be accurately analyzed and applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8- 555621 A7 B7 V. Description of the invention (6) (Please read the precautions on the back before filling this page) The color component of the light can accurately detect the polishing end point. Moreover, the applied light is conducted and the reflected light is picked up by the light guide at the illumination end and the light guide at the light receiving end; therefore, the light is used more efficiently and compared with the case of using a beam splitter, The detection accuracy is improved, and at the same time, the detection accuracy is effectively reduced due to the displacement of the optical alignment. Furthermore, according to the present invention, white light is applied on a polished wafer, and spectroscopic analysis is performed on the reflected light, so that the polishing termination point of the wafer can not be detected. Therefore, compared with the case where the polishing termination point is detected with a single-wavelength light, more information can be used to detect the polishing termination point, and therefore, the polishing termination point can be accurately detected. Moreover, it can correct the change in the amount of reflected light caused by the change in transmittance of windows with different surface conditions, and always maintain a fixed amount of reflected light; therefore, the polishing termination point can always be accurately detected. The illustration briefly illustrates the nature of the present invention, as well as its other purposes and advantages, printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economics, which will be described below with reference to the accompanying drawings. Wherein, in the entire figure, the same reference numerals represent the same or similar parts, and among them: FIG. 1 is a diagram showing a polishing termination point detection of a wafer polishing equipment in a first embodiment of the present invention Block diagram of the device structure; Figure 2 is a schematic diagram showing the structure of the lighting / light receiving system; Figure 3 is another block diagram showing the structure of a spectroscope (polychromatic meter); Figure 4 is still a In a second embodiment of the invention, a wafer throwaway paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -9-555621 A7 ___ B7_ V. Description of the invention (7) Polishing termination point of optical equipment Another block diagram of the inspection device structure; (Please read the precautions on the back before filling out this page) Figure 5 is a flowchart showing the steps for processing wafers using the polishing termination point detection method of the present invention; Figure 6 is A flowchart showing the steps of a method for correcting the brightness of a light source; FIG. 7 is a structural diagram showing a brightness adjusting mechanism in another embodiment; FIG. 8 is a structural diagram showing a brightness adjusting mechanism in another embodiment; To And FIG. 9 shows a structure diagram of a brightness adjustment mechanism in another embodiment. A comparison table of main components 10: Wafer polishing equipment 12: Polishing end point detection device 14: Roller 16: Polishing pad 18: Wafer holding Head 20: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 22: Control unit 24: Viewing hole 26: Transparent window 28: Lighting / light receiving optical system 3 (h beam splitter 30A: light guide 30B: Light guide This paper size applies the Chinese national standard "CNS" A4 specification (210X297 mm) '-10- 555621 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of invention (8) 3 2: Light source unit 32A: light source bulb 32B: brightness adjustment mechanism 3 4: beam splitter 36: computer 38: lens barrel 40: condenser lens 42: incident slit 44: plane mirror 46: diffraction grating 48: array light receiving device 50. Multiplexer 58A-58G: light source bulb 60: switch 62: light source bulb 64: guide rail 6 6: slider 6 8: light source bulb 70: blocker W: wafer W1: wafer W2: wafer W3: wafer D1 : Darkness composition This paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm) ·- -(Please read the notes on the back before filling this page)
，1T -11 - 555621 Μ _ Β7 _ 五、發明説明（9 ) (請先閲讀背面之注意事項再填寫本頁) D2:暗度成份 D3:暗度成份 R1:光線強度光譜 R2:光線強度光譜 R3:光線強度光譜 R4:光線強度光譜 U:開口 較佳實施例詳細說明 以下根據隨圖，將會詳細說明一晶圓拋光設備之拋光 終止點檢測裝置之較佳實施例。 第1圖爲一表示在本發明一第一實施例中，一晶圓拋光 設備之拋光終止點檢測裝置結構之方塊圖。 經濟部智慧財產局8工消費合作社印製 一晶圓拋光設備10包含一由一馬達（未示出）加以水平驅 動並旋轉之滾筒14，一接著至滾筒14表面之拋光墊16，一握 持一晶圓W並以一預定壓力壓著晶圓W，頂住拋光墊16之晶 圓握持頭18，一供應漿水至拋光墊16表面之漿水供應噴嘴 20，及一控制整個設傭整體驅動作業之控制單元22。 碟形滾筒14具一形成在其預定位置上並通過滾筒14之 觀視孔24。觀視孔24具一裝設在其頂端開口中之透明窗26 〇 晶圓握持頭18在一離開滾筒14旋轉中心一位置處壓著 晶圓W，頂住拋光墊16，且它亦由馬達（未示出）加以水平驅動 並旋轉。晶圓握持頭18亦由一升降器（未示出）加以驅動並相 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐） .19 - 555621 A7 _B7 五、發明説明（1〇) 對於拋光墊1 6加以垂直移上和移下。 壓著被晶圓握持頭18加以握持之晶圓W，頂住拋光墊16 而旋轉拋光墊16以及晶圓W，然後當從漿水供應噴嘴20供應 漿水至拋光墊16時即開始進行拋光。 拋光終止點檢測裝置12主要包含一照明/光線接收光學 系統28，一分光導引器30，一光源單元32，一分光鏡（多色 計）34，及一電腦36。 照明/光線接收光學系統28是支撑在一支架（未示出）上 並位在觀視孔24下方之一位置。照明/光線接收光學系統28 包含一透鏡筒38，聚光透鏡40是配置在該透鏡筒內。 分光導引器30爲一插多數光纖並在一端一*分爲二。分 歧端之光線導引器30A是連接至光源單元32，作爲照明端之 光線導引器30A，並將另一端之光線導引器30B連接至分光 鏡34，作爲光線接收端之光線導引器30B。而且，將結合端 連接至照明/光線接收光學系統28。 將一施加白色光線之燈泡（例如，鹵素燈）建在光源單元 32中作爲一光源，並以在分光導引器30照明端之光線導引 器30A將來自光源之白色光線傳導至照明/光線接收光學系 統28。然後以照明/光線接收光學系統28之聚光透鏡40加以 會聚已從分光導引器30所輸出之白色光線，並傳導白色光 線，通過形成在滾筒14上之窗口 26，投射在拋光墊16上之晶 圓W的拋光面（底面上）上，俾能照明拋光面。之後，再以照 明/光線接收光學系統28之聚光透鏡40加以會聚拋光面上之 反射光線並將它導引至分光導引器30內，然後通過光線接 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐〉 ——.—i I n I I ! J 1 :| —I- I (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局Μ工消費合作社印製 -- 555621 A7 B7 五、發明説明（Μ) 收端之光線導引器30Β將它傳導至分光鏡34。 (請先閱讀背面之注意事項再填寫本頁) 分光鏡34將已被光線接收端之光線導引器30Β所傳導之 反射光線分成對應波長之光線，並將分開之光線轉換成符 合所對應波長之強度之電氣訊號，然後將所轉換之電氣訊 號輸出至電腦36，作爲該波長之光線強度訊號。如從第3圖 所見，分光鏡34包含一入射狹縫42，一平面鏡44，一凹面繞 射光柵46，一陣列光線接收裝置48，及一多工器50。以光線 接收端之光線導引器30Β加以傳導至分光鏡34之反射光線， 進一步將它導引經過入射狹縫42並以平面鏡44將它傳導至 凹面之繞射光柵46。然後，以凹面之繞射光柵46將光線分 成所對應波長之光線，並在陣列光線接收裝置48上形成一 影像。以陣列光線接收裝置48現在將光線轉換成符合所對 應波長之光線強度之電氣訊號，並經由多工器50將它輸出 至電腦36，作爲該波長之強度訊號。 經濟部智慧財產局g(工消費合作社印製 電腦36根據已從分光鏡34所輸出之反射光線之對應波 長之光線強度訊號加以判定一拋光終止點。更明確地說， 電腦36根據光射光線（光譜）對應波長之光線強度分佈加以 判定拋光終止點，當拋光晶圓W並使另一型薄膜以後曝光時 ，該反射光即變化。當根據分佈結果，判定拋光來到終止 點時，電腦36輸出一表示拋光終止點之訊號至晶圓拋光設 備10之控制單元22，並完成拋光程序。 爲了判定一特定薄膜之拋光終止點，電腦36根據用以 檢測拋光終止點之預定演算法，以算術處理來自分光鏡34 之光線強度訊號。在這程序中，使用下列演算法：主成份刻 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） -14- 555621 A7 _B7 五、發明説明（12) 劃法；色差法；色相差異法，及一區域比率法。 主成份刻劃：事先測量拋光程序中反射光線之光譜，並 經由一系列光譜取得主成份光譜，然後使用光譜刻劃作爲 評估値。在拋光程序之即時分析中，得到各次之刻劃，且 如刻劃値相同或在預定値之上或下，或如一刻劃値低或高 於預定値時則判定一拋光終止點。 首先，利用主成份分析法將拋光程序之一系列光譜矩 陣R解析成一主成份光譜矩陣U和一刻劃矩陣Z之乘積： n f " ” f?7 R = /72 Ux /Zr "l· w E. (1) 第一主成份具有關光譜變化之最大資訊；因此判定第一 主成分之刻劃爲一評估値。 爲了從各別拋光程序之一光譜r得到一刻劃向量z，使用 下列公式（2)，其中，刻劃向量z之第一元素變成第一主成份 之一刻劃： I m 丨 lzT =1VTxmr. (2) 色差法：色彩是在開始拋光時，從反射光線之一光譜， 利用一預期色彩系統以數値表示，並在拋光期間，從一反 射光線之光譜使用相同色彩系統加以計算色差或表示色差 之指數，然後，如一色差値相同於或超過一預定値，則判 定一拋光終止點。 可使用以下色彩系統，如XYZ色彩系統，Lab色彩系統， L*a*b*色彩系統，Luv色彩系統，及L*u*v*色彩系統。可使 用以下色差，如△ E*ab，△ E*uv, △ Eh(漢特（Hanter)色差）， 及ΔΕαν(亞當斯·尼可遜（Adams-Nickerson色差）。 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X 297公釐） ----- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慈財產局員工消費合作社印¾ -15- 555621 A7 _B7__ 五、發明説明（13) 簡單的是，以下列方程式（3)，從開始拋光時之X。，Y◦和 Z〇及拋光期間之Xi，Yi和Zi可得到色差： (請先閱讀背面之注意事項再填寫本頁) (X,•-Z。)2， 或 Μ-Χ〇)2^(Υ^Υ0)2^(Ζ^Ζ0)2 · (3) 而且，藉由日本工業標準（JIS)Z872 1，”有關於"色彩 Munsell書（Macbeth, Kollmorgen公司分部）π之”色彩規格一根 據其三項屬性之規格"中所定義之計算可得到反射物體色彩 之三色素X，Υ，和Ζ。 經濟部智葸財產局員工消費合作社印災 從三色素X，Υ，和Ζ藉由JIS Ζ 8229"色彩規格-CIE LAB 和CIE LUV色彩空間”中所定義之計算可得到色彩系統 L*a*b* 和 L*u*v* 中之 L*，a*，b*，u*，和 V*，該 JIS Z 8729 中之 色彩規格等於CIE第15.2號（ 1986)出版之比色法。第二版，4, 並與 ISO 7724- 1 和 ISO 7724-3 有關。而且，藉由 JIS Z 8730" 色彩規格一非發光體色差"中所定義之計算，從開始拋光 時之各別色彩系統値和拋光期間各別時期之各色彩系統値， 可得到△EU，ΔΕ、，ΛΕη和ΔΕΑΝ，JIS Z 8730中之色彩規 格等於第15.2號（ 1986)出版之比色法，第二版，4，並與 ISO 7724-1 和 ISO 7724-3有關。 色相差法：色彩是在開始拋光時，從反射光線之一光譜， 利用一預期色彩系統以數値表示，並在拋光期間從一反射 光線之光譜，於開始拋光時使用相同色彩系統加以計算色 相或表示色相之指數，然後，如色相差値相同於或超過一 預定値，則判定一拋光終止點。 ^紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16- 555621 A7 ____ B7 五、發明説明（14) (請先閱讀背面之注意事項再填寫本頁) 可使用以下色彩系統，如XYZ色彩系統，Lab色彩系統， L*a*b*色彩系統，Luv色彩系統，及L*u*v*色彩系統；可使用 如 ΔΗ*3ΐ>(Δ1ιαΐ3)，△HSd^huv)等之色差。 簡單的是，以下列方程式（4)和（5)，從拋光開始時之 X〇，Y〇和Z。及拋光期間之Xi，Yi，和Zi可得到色差： ('一义)2+(少，一少。)2， 或 I V(x；-x〇)2+(^/-^)2 ； (4)， 1T -11-555621 Μ _ Β7 _ V. Description of the invention (9) (Please read the notes on the back before filling this page) D2: Darkness component D3: Darkness component R1: Light intensity spectrum R2: Light intensity spectrum R3: Light Intensity Spectrum R4: Light Intensity Spectrum U: Opening Preferred Embodiments Detailed description According to the accompanying drawings, a preferred embodiment of a polishing termination point detection device of a wafer polishing equipment will be described in detail below. Fig. 1 is a block diagram showing the structure of a polishing termination point detection device of a wafer polishing apparatus in a first embodiment of the present invention. The Ministry of Economic Affairs ’Intellectual Property Bureau's 8th Industrial Cooperative Prints a wafer polishing equipment 10 including a roller 14 which is horizontally driven and rotated by a motor (not shown), a polishing pad 16 which follows the surface of the roller 14 and holds A wafer W is pressed against the wafer W with a predetermined pressure, against the wafer holding head 18 of the polishing pad 16, a slurry water supply nozzle 20 that supplies slurry to the surface of the polishing pad 16, and a control unit Control unit 22 for overall driving operation. The dish-shaped roller 14 has a viewing hole 24 formed at a predetermined position thereof and passing through the roller 14. The viewing hole 24 is provided with a transparent window 26 installed in the top opening thereof. The wafer holding head 18 presses the wafer W at a position away from the rotation center of the drum 14, and abuts the polishing pad 16, and it is also formed by A motor (not shown) is driven horizontally and rotates. The wafer holding head 18 is also driven by a lifter (not shown) and the paper size applies the Chinese National Standard (CMS) A4 specification (210X297 mm). 19-555621 A7 _B7 V. Description of the invention (10) The polishing pad 16 is moved up and down vertically. The wafer W held by the wafer holding head 18 is pressed against the polishing pad 16 to rotate the polishing pad 16 and the wafer W, and then starts when the slurry is supplied from the slurry supply nozzle 20 to the polishing pad 16 Perform polishing. The polishing end point detection device 12 mainly includes an illumination / light receiving optical system 28, a beam splitter 30, a light source unit 32, a beam splitter (polychromatic meter) 34, and a computer 36. The illumination / light receiving optical system 28 is supported on a stand (not shown) and is positioned at a position below the viewing hole 24. The illumination / light receiving optical system 28 includes a lens barrel 38, and a condenser lens 40 is disposed in the lens barrel. The beam splitter 30 is a plurality of optical fibers inserted and divided into two at one end. The light guide 30A at the branch end is connected to the light source unit 32 as the light guide 30A at the illumination end, and the light guide 30B at the other end is connected to the beam splitter 34 as the light guide at the light receiving end 30B. Moreover, the coupling end is connected to the illumination / light receiving optical system 28. A white light-emitting bulb (for example, a halogen lamp) is built in the light source unit 32 as a light source, and the white light from the light source is transmitted to the light / light by the light guide 30A at the illumination end of the beam splitter 30 RX optical system 28. Then, the condenser lens 40 of the illumination / light receiving optical system 28 condenses the white light that has been output from the beam splitter 30 and transmits the white light. The light is projected on the polishing pad 16 through the window 26 formed on the drum 14. On the polished surface (bottom surface) of wafer W, the polished surface cannot be illuminated. After that, the condenser lens 40 of the illumination / light-receiving optical system 28 collects the reflected light on the polished surface and guides it into the beam splitter 30, and then the paper is connected to the paper by the Chinese standard (CNS) ) Α4 specification (210X 297 mm) ——. —I I n II! J 1: | —I- I (Please read the precautions on the back before filling this page) Ordered by the Intellectual Property Bureau of the Ministry of Economy -555621 A7 B7 V. Description of the invention (M) The light guide 30B at the end transmits it to the beam splitter 34. (Please read the precautions on the back before filling this page) The beam splitter 34 will be received by the light The reflected light transmitted by the light guide 30B at the end is divided into rays of the corresponding wavelength, and the separated rays are converted into electrical signals of the intensity corresponding to the corresponding wavelength, and then the converted electrical signals are output to the computer 36 as the wavelength The light intensity signal. As seen from FIG. 3, the beam splitter 34 includes an entrance slit 42, a plane mirror 44, a concave diffraction grating 46, an array light receiving device 48, and a multiplexer 50. It receives light end The light guide 30B guides the reflected light from the beam splitter 34, further guides it through the entrance slit 42 and transmits it to the concave diffraction grating 46 by the plane mirror 44. Then, the concave diffraction grating 46 The light is divided into rays of the corresponding wavelength, and an image is formed on the array light receiving device 48. The array light receiving device 48 now converts the light into an electrical signal that matches the light intensity of the corresponding wavelength, and passes the multiplexer 50 to It is output to the computer 36 as the intensity signal of this wavelength. The Ministry of Economic Affairs Intellectual Property Bureau g (industrial consumer cooperative printed computer 36 determines a polishing termination based on the light intensity signal of the corresponding wavelength of the reflected light output from the beam splitter 34 More specifically, the computer 36 determines the polishing termination point based on the light intensity distribution of the corresponding wavelength of the light ray (spectrum). When the wafer W is polished and another type of film is exposed later, the reflected light changes. When According to the distribution results, when it is determined that the polishing has reached the termination point, the computer 36 outputs a signal indicating the polishing termination point to the control of the wafer polishing equipment 10. In order to determine the polishing end point of a specific film, the computer 36 arithmetically processes the light intensity signal from the spectroscope 34 according to a predetermined algorithm for detecting the polishing end point. In this program, The following algorithm is used: The paper size of the principal component engraved paper is in accordance with the Chinese National Standard (CNS) A4 specification (21 × 297 mm) -14- 555621 A7 _B7 V. Description of the invention (12) Scribe method; Color difference method; Hue difference method One area ratio method: Principal component scribing: Measure the spectrum of reflected light in the polishing program in advance, and obtain the principal component spectrum through a series of spectra, and then use the spectral scribing as an evaluation 値. In the real-time analysis of the polishing process, each scratch is obtained, and if the scratch is the same or above or below a predetermined threshold, or if the scratch is lower or higher than a predetermined threshold, a polishing termination point is determined. First, the principal component analysis method is used to resolve a series of spectral matrices R in a polishing program into a product of a principal component spectral matrix U and a score matrix Z: nf " ”f? 7 R = / 72 Ux / Zr " l · w E. (1) The first principal component has the largest information about the change of the spectrum; therefore, the score of the first principal component is judged as an evaluation 値. In order to obtain a score vector z from the spectrum r of one of the respective polishing procedures, use The following formula (2), where the first element of the scribing vector z becomes one of the first principal components: I m 丨 lzT = 1VTxmr. (2) Color difference method: The color is from the reflected light when the polishing is started. A spectrum, expressed in numbers using an expected color system, and during polishing, using the same color system to calculate the color difference or the index representing the color difference from the spectrum of a reflected light, and then, if a color difference is equal to or exceeds a predetermined value, Then determine a polishing end point. The following color systems can be used, such as XYZ color system, Lab color system, L * a * b * color system, Luv color system, and L * u * v * color system. The following color differences can be used, Such as △ E * ab, △ E * u v, △ Eh (Hanter color difference), and ΔΕαν (Adams-Nickerson color difference). The paper size is applicable. National Standard (CNS) A4 specification (210X 297 mm)- --- (Please read the notes on the back before filling out this page) Order the stamp of the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -15- 555621 A7 _B7__ V. Description of the invention (13) Simply, use the following equation (3 ), The color difference can be obtained from X., Y◦ and Z〇 at the beginning of polishing and Xi, Yi and Zi during polishing: (Please read the precautions on the back before filling this page) (X, • -Z.) 2 , Or M-χ〇) 2 ^ (Υ ^ Υ0) 2 ^ (Z ^ Z0) 2 · (3) Moreover, with the Japanese Industrial Standard (JIS) Z872 1, "There is a book about " Munsell Color (Macbeth, Kollmorgen Division) π "color specifications-the three colors X, 三, and Z of the reflective object color can be obtained according to the calculations defined in the specifications of its three attributes". Printed by the Consumer Affairs Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Disasters from the three pigments X, Υ, and Z by JIS ZZ 8229 " color specifications-CIE LAB and CIE LUV color space " L *, a *, b *, u *, and V * in the color systems L * a * b * and L * u * v * can be calculated. The color specifications in this JIS Z 8729 are equal to CIE No. 15.2 ( 1986) Colorimetry. Second edition, 4, and related to ISO 7724-1 and ISO 7724-3. Moreover, by the calculations defined in JIS Z 8730 " Color Specification-Non-luminous body color difference ", from the respective color systems at the beginning of polishing 値 and the respective color systems at different periods during polishing, △ EU can be obtained, ΔE,, ΔΕη and ΔΕΑΝ, the color specifications in JIS Z 8730 are equal to the colorimetric method published in No. 15.2 (1986), Second Edition, 4, and are related to ISO 7724-1 and ISO 7724-3. Hue difference method: The color is calculated from a spectrum of reflected light at the beginning of polishing, expressed as a number using a desired color system, and the spectrum of a reflected light during polishing is used to calculate the hue at the beginning of polishing. Or, it represents the hue index, and then, if the hue difference 値 is equal to or exceeds a predetermined 値, a polishing termination point is determined. ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -16- 555621 A7 ____ B7 V. Description of the invention (14) (Please read the precautions on the back before filling this page) The following color system can be used. Such as XYZ color system, Lab color system, L * a * b * color system, Luv color system, and L * u * v * color system; such as ΔΗ * 3ΐ > (Δ1ιαΐ3), △ HSd ^ huv), etc. Chromatic aberration. Briefly, X0, Y0, and Z from the beginning of polishing are expressed by the following equations (4) and (5). And Xi, Yi, and Zi during polishing can get the color difference: ('yiyi) 2+ (less, one less.) 2, or IV (x; -x〇) 2 + (^ /-^) 2; ( 4)
X Y X =- ， V =- (5、 x+r+z，/ x+y+z ’ … 其中，X, Y和z表示物體色彩之三色素。 從這三色素，藉由：JIS Z 8729"中所定義之計算可得到 色彩系統L*a*b*和L*u*v*中之L*，a*，b*，u*和ν*β而且，從 開始拋光時之各別色彩系統値和拋光期間各別時期之各色 彩系統値，藉由"JIS Z 8730"中所定義之計算可得到 △ Η*“（Δ hab)和△ Η*ιιν(Δ huv) 經濟部智慧財產局8工消费合作社印製 區域比率法：選取兩波長區域，在開始拋光時之反射光 線光譜和在拋光終止點時之反射光線光譜之間，該區域之 反射特性急劇變化，並計算兩波長區域間之區域比率成爲 一指數。如在拋光終止點時，該値較大，則判定相同於或 超過一預定値之値爲一拋光終止點。如在拋光終止點時， 該値較小，則判定相同於或小於預定値之値爲一拋光終止 點。 爲以數値方式處理來自分光鏡34之光強度訊號，電腦 3 6遵循上述演算法並判定特定模之一拋光終止點。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 555621 A7 _B7__ 五、發明説明（15) 現在將提出已如上述所建構之本實施例中，晶圓拋光設 備10之拋光終止點檢測裝置12之作業。 當照亮光源單元32之光源（未示出）時，即將來自光源之 白色光線傳導至分光導引器30照明端之光線導引器30A中， 且進一步傳導至照明/光線接收光學系統28中。以聚光透鏡 40加以會聚已被傳導至照明/光線接收光學系統28中之白色 光線，且現在並加以傳導通過窗口 26,該窗口 26是以一種方 式形成在晶圓拋光設備10之滾筒14上，加以照明正進行拋 光中之晶圓W之拋光面（底面）。 將已被反射在晶圓W拋光面上之光線加以傳導通過窗口 26並抵達照明/光線接收光學系統28之聚光透鏡40。被聚光 透鏡40會聚後，將反射光線傳導至分光導引器30中。以在 光線接收端之分光導引器30B，現在將已被傳導至分光導引 器30中之反射光線加以傳導至分光鏡34中。 現在已被傳導至分光鏡34中之反射光線則進一步被導 引通過入射狹縫42並以平面鏡44加以傳導至凹面繞射光柵 46，並在凹面繞射光柵46加以分成對應波長之光線，然後在 陣列光線接收裝置48上形成一影像。在陣列光線接收裝置 48上形成影像之光線經由陣列光線接收裝置48被轉換成與 所對應波長一致之電氣訊號，並經由多工器5 0加以輸出至 電腦36，作爲該波長之光線強度訊號。 爲了判定特定膜之拋光終止點，電腦36根據用以檢測 一拋光終止點之預定演算法，以算術處理對應反射光線波 長之光線強度訊號。然後，電腦36輸出一表示拋光終止點 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） I m - m ! -- ·1 I Γ - =- - - I (請先閲讀背面之注意事項再填寫本頁) 、1Τ 經濟部智慧財產局員工消費合作社印製 -18- 555621 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（16) 之訊號至晶圓拋光設備10之控制單元22。 根據本發明實施例中晶圓拋光設備10之拋光終止點檢 測裝置1 2。將已被拾取之反射光線分成對應波長之光線， 並根據已被分開波長之光線強度分佈加以判定拋光終止點 。因此，可精確地分析反射光線之色彩成份並能準確地檢 測拋光終止點。 而且，因分別使用在照明端之光線導引器30A和在光源 接收端之光線導引器30B加以傳導照明光線並拾取反射光線 ，故與使用一分光器之習知情況比較，可更有效率地加以 使用光線。因此增進檢測靈敏度且由於位移之光學校準可 有效防止降低檢測能力。 第6圖爲一表示在本發明一第二實施例中，一晶圓拋光 設備之拋光設備之拋光終止點檢測裝置結構之方塊圖。 如從第4圖中所見，第二實施例中之拋光終止點檢測裝 置12具一建立光源單元32中之亮度調整機構32B，加以調整 光源單元32之光源燈泡32A之亮度。亮度調整機構32B根據 從電腦36所輸出之控制訊號加以調整光源燈泡32A之亮度。 光源燈泡32A之亮度調整是例如藉調整供應至光源燈泡32A 之電量所達成的。 而且，爲了檢測一特定膜之拋光終止點，本實施例中 拋光終止點檢測裝置1 2之電腦36根據用以檢測一預定拋光 終止點之演算法，以算術處理來自分光鏡34之一光線強度 訊號。當檢測抛光終止點時，電腦36輸出一抛光終止點訊 號至晶圓拋光設備10之控制單元22。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公疫] ~ -19 - (請先閲讀背面之注意事項再填寫本頁) 衣· 訂 f 555621 A7 B7 五、發明説明（17) 因結構和第一實施例中之拋光終止點檢測裝置恰相同， 故省略對拋光終止點檢測裝置其它結構之說明。 以下將說明第二實施例中，拋光終止點檢測裝置1 2之 作業。 在本實施例之拋光終止點檢測裝置12中，施加白色光 線至晶圓W之拋光面上並測量反射光線之光線強度光譜，俾 能檢測一拋光終止點。首先，將說明光源強度光譜之測量 方法。 當開啓光源單元32之光源燈泡32A時，光源燈泡32A之 白色光線即進入分光分導引器30照明端之光線導引器30A中 ，並將白色光線傳導至照明/光線接收光學系統28中。在照 明/光線接收光學系統28會聚光線後，通過觀視窗26將光線 施加至進行拋光中之晶圓W之拋光面上，該觀視窗26是形成 在晶圓拋光設備10之滾筒14上。 已被反射在晶圓W拋光面上之光線現在通過觀視窗26並 由照明/光線接收光學系統28加以會聚，且被傳導至分光導 引器30中。之後，以光線接收端之光線導引器30B將光線導 引至分光鏡34中。 分光鏡34將正被傳導至分光鏡34中之反射光線分成各 別波長之光線，該反射光線被轉換成相應於各別波長光線 強度之電氣訊號。然後加以輸出至電腦36，作爲各別波長 之光線強度訊號（光線強度光譜）。 電腦36根據用以檢測預定拋光終止點之演算法，以算 術處理各別波長反射光線之光線強度訊號（光線強度光譜）， 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -- (請先閲讀背面之注意事項再填寫本頁)XYX =-, V =-(5, x + r + z, / x + y + z '… where X, Y and z represent the three pigments of the object color. From these three pigments, by: JIS Z 8729 " The calculations defined in can be used to obtain the L *, a *, b *, u *, and ν * β of the color systems L * a * b * and L * u * v *, and the respective color systems from the beginning of polishing値 and each color system at different times during polishing 値, △ Η * "(Δ hab) and △ Η * ιιν (Δ huv) can be obtained from the calculations defined in " JIS Z 8730 " 8 industrial consumer cooperative printed area ratio method: Select two wavelength regions, between the reflected light spectrum at the beginning of polishing and the reflected light spectrum at the end point of polishing, the reflection characteristics of this region change sharply, and calculate the interval between the two wavelengths The area ratio becomes an index. If the 値 is larger at the polishing termination point, it is judged that the 相同 which is the same as or exceeds a predetermined 値 is a polishing termination point. If the 値 is smaller at the polishing termination point, the 判定 is judged The same or less than the predetermined value is a polishing end point. To process the light intensity from the spectroscope 34 in a numerical manner. Signal, the computer 3 6 follows the above algorithm and determines the polishing termination point of one of the specific molds. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -17- 555621 A7 _B7__ V. Description of the invention (15) Now The operation of the polishing end point detection device 12 of the wafer polishing apparatus 10 in the present embodiment, which has been constructed as described above, will be proposed. When the light source (not shown) of the light source unit 32 is illuminated, white light from the light source is transmitted To the light guide 30A of the illumination end of the beam splitter 30, and further transmitted to the illumination / light receiving optical system 28. The light is condensed by the condenser lens 40 and has been transmitted to the white light in the illumination / light receiving optical system 28 Light is now transmitted through window 26, which is formed on roller 14 of wafer polishing apparatus 10 in a manner to illuminate the polishing surface (bottom surface) of wafer W being polished. It will have been The light reflected on the polished surface of the wafer W is transmitted through the window 26 and reaches the condenser lens 40 of the illumination / light receiving optical system 28. After being converged by the condenser lens 40, it is reflected The light is transmitted to the beam splitter 30. The beam splitter 30B at the light receiving end now transmits the reflected light that has been transmitted to the beam splitter 30 to the beam splitter 34. It has now been transmitted to The reflected light in the beam splitter 34 is further guided through the incident slit 42 and transmitted to the concave diffraction grating 46 by the plane mirror 44. The concave diffraction grating 46 divides the light into the corresponding wavelength light, and then the light is received by the array light receiving device. An image is formed on 48. The light forming the image on the array light receiving device 48 is converted into an electrical signal consistent with the corresponding wavelength by the array light receiving device 48, and is output to the computer 36 through the multiplexer 50, as the Wavelength light intensity signal. In order to determine the polishing termination point of a particular film, the computer 36 arithmetically processes the light intensity signal corresponding to the wavelength of the reflected light according to a predetermined algorithm for detecting a polishing termination point. Then, the computer 36 outputs a polishing end point. The paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X 297 mm) I m-m!-· 1 I Γ-=---I (Please read the back first (Notes on this page, please fill in this page), 1T Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-18- 555621 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Signal of Invention Note (16) to wafer polishing equipment 10 的 控制 组 22。 10 of the control unit 22. The polishing termination point detecting device 12 of the wafer polishing apparatus 10 according to the embodiment of the present invention. The picked-up reflected light is divided into rays of the corresponding wavelength, and the polishing end point is determined according to the intensity distribution of the divided wavelength light. Therefore, the color component of the reflected light can be accurately analyzed and the polishing end point can be accurately detected. Moreover, since the light guide 30A at the illumination end and the light guide 30B at the light source receiving end are respectively used to conduct the illumination light and pick up the reflected light, it can be more efficient compared with the conventional case of using a beam splitter. Use light gently. Therefore, the detection sensitivity is improved and the optical calibration due to the displacement can effectively prevent the reduction of the detection capability. Fig. 6 is a block diagram showing the structure of a polishing termination point detection device of a polishing apparatus of a wafer polishing apparatus in a second embodiment of the present invention. As can be seen from Fig. 4, the polishing end point detecting device 12 in the second embodiment has a brightness adjusting mechanism 32B for establishing the light source unit 32 to adjust the brightness of the light source bulb 32A of the light source unit 32. The brightness adjustment mechanism 32B adjusts the brightness of the light source bulb 32A based on a control signal output from the computer 36. The brightness adjustment of the light source bulb 32A is achieved, for example, by adjusting the amount of power supplied to the light source bulb 32A. Moreover, in order to detect the polishing termination point of a specific film, the computer 36 of the polishing termination point detection device 12 in this embodiment performs arithmetic processing on a light intensity from the spectroscope 34 according to an algorithm for detecting a predetermined polishing termination point. Signal. When the polishing termination point is detected, the computer 36 outputs a polishing termination point signal to the control unit 22 of the wafer polishing apparatus 10. This paper size applies to China National Standard (CNS) A4 specifications (210X297 public epidemic) ~ -19-(Please read the precautions on the back before filling out this page) Clothing · Order f 555621 A7 B7 V. Description of the invention (17) Due to structure It is the same as the polishing end point detection device in the first embodiment, so the description of other structures of the polishing end point detection device is omitted. The operation of the polishing end point detection device 12 in the second embodiment will be described below. In this implementation The polishing termination point detection device 12 of the example applies white light to the polished surface of the wafer W and measures the light intensity spectrum of the reflected light to detect a polishing termination point. First, the method of measuring the intensity spectrum of the light source will be explained. When the light source bulb 32A of the light source unit 32 is turned on, the white light of the light source bulb 32A enters the light guide 30A of the illumination end of the light splitter 30 and transmits the white light to the illumination / light receiving optical system 28. After the illumination / light receiving optical system 28 condenses the light, the light is applied to the polishing surface of the wafer W being polished through a viewing window 26, which is formed On the roller 14 of the wafer polishing apparatus 10. The light that has been reflected on the polished surface of the wafer W now passes through the viewing window 26 and is converged by the illumination / light receiving optical system 28, and is transmitted to the beam splitter 30 After that, the light is guided to the beam splitter 34 by the light guide 30B at the light receiving end. The beam splitter 34 divides the reflected light being transmitted into the beam splitter 34 into rays of respective wavelengths, and the reflected rays are converted The electrical signal corresponding to the light intensity of each wavelength is output to a computer 36 as the light intensity signal (light intensity spectrum) of each wavelength. The computer 36 performs arithmetic processing according to an algorithm for detecting a predetermined polishing end point. The light intensity signal (light intensity spectrum) of reflected light at different wavelengths. This paper size applies the Chinese National Standard (CNS) Α4 specification (210 × 297 mm)-(Please read the precautions on the back before filling this page)
、1T 經濟部智慧財產局員工消費合作社印製 -20- 555621 A7 B7 五、發明説明（18) (請先閲讀背面之注意事項再填寫本頁) 因此加以檢測特定膜之拋光終止點。更明確地說，電腦36 以算術計算從分光鏡34已得到之反射光線一光線強度光譜 和從一參考試樣已得到並已儲存在記憶體中之一光源強度 光譜間之比率，且電腦36參考該比率，檢測拋光終止點，作 爲所測量反射率之資料。例如，參考根據所測量反射率資 料之色彩座標變化加以檢測拋光終止點。 在這方法中，在交換拋光墊16後，開始另一項拋光前 即測量參考試樣（例如一鋁板）之光線強度光譜，並將參考試 樣之光線強度光譜儲存於電腦36中所建之記憶體中。藉由 將參考試樣安置在拋光墊16之觀視窗26上而測量來自參考 試樣之反射光線之光譜。 施加要被施加在晶圓W之拋光面上之光線，使它通過觀 視窗26，因此觀視窗26和光學系統本身影響到由分光鏡34所 測量之晶圓W之光線強度光譜。觀視窗26和光學系統本身之 那些影響使拋光終止點之檢測變質，成爲黑暗成份（即，雜 訊成份）。 經濟部智慧財產局員工消費合作社印製 爲了那個原因，電腦36在消除有關已被分光鏡34所測 量之晶圓W之光線強度之暗度成份後即檢測拋光終止點。簡 會之，電腦36判定光線強度爲真正光線強度光譜，從一已 被檢測之晶圓之光線強度光譜減去暗度成份而得到該光線 強度光譜，且電腦36使用真正光線強度加以檢測拋光終止 點。因暗度成份是包含在參考試樣之光線強度光譜中，故 在消除暗度成份後是以相同方式檢測拋光終止點。那就是， 電腦36判定光線強度爲真正之光線強度，從已被檢測爲參 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 - 555621 A7 B7 五、發明説明（19) 考試樣之光線強度光譜減去暗度成份而得到該光線強度， 且電腦36使用真正光線強度加以檢測拋光終止點。 (請先閱讀背面之注意事項再填寫本頁) 如暗度成份測量中，光線進入觀視窗26中而沒有東西 是放在拋光墊16之觀視窗26上，並測量反射光線之光線強 度光譜。所測量暗度被儲存於電腦36中所建之記憶體內。 如上述，在本實施例之拋光終止點檢測裝置1 2中，施 加光線在晶圓W之拋光面上，並測量反射光線之光線強度光 譜，然後.根據反射光線之光線強度光譜和參考試樣反射光 線之光線強度光譜間之比率（所測量之反射率）加以檢測拋光 終止點。 在本實施例之拋光終止點檢測裝置1 2中，經由觀視窗 26施加光線在晶圓W之拋光面上，該觀視窗26儘管由於晶圓 W之處理條件和環境之變化改變了透射率。如透射率改變， 要進入分光鏡34之反射光線量即改變。且無法準確檢測拋 光終止點。 經濟部智慈財產局員工消費合作社印製 爲解決這問題，本實施例中之拋光終止點檢測裝置1 2 即自動調整光源亮度，使得甚至觀視窗26之條件改變時亦 能進入分光鏡34中之光線維持固定。而且，由於光源亮度 之改變，拋光終止點檢測裝置1 2即自動修正參考試樣之光 線強度光譜。 以下將說明晶圓W之處理方法及光源亮度之調整方法（ 參考第5圖）。 首先，當交換拋光墊16(步驟S1)時，將光源亮度設在新 拋光墊16之下（步驟S2)。此時之光源亮度爲L·。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ297公釐） -22- 555621 A7 B7 五、發明説明（2〇) 在設定光源亮度後，在所設之亮度Li下，電腦36即測量 參考試樣之光線強度光譜。然後，以一參考光線強度光譜 Ri加以設定所得到之光線強度光譜並將它儲存在記憶體中（ 步驟S3)。 初始設定是由上述程序加以完成，然後，開始一序向 晶圓處理（步驟S4)。 當序向晶圓處理開始時，即測量暗度成份（步驟S5)。如 以上提及，在未安置任何東西於拋光墊16之觀視窗26之狀 態中，藉由施加白色光線在觀視窗26中加以測量暗度成份， 並測量反射光線之光線強度光譜。所測量之暗度D1是儲存 於建在電腦36中之記憶體中。 接著，將一第一晶圓1安置在拋光墊16上並開始處理 晶圓W!(步驟S6)，且同時測量第一晶圓1之光線強度光譜丁! 〇 電腦36根據所測量之光線強度光譜T!，參考試樣之光 線強度光譜R!，及儲存在記憶體中之暗度成份Eh加以檢測拋 光終止點（步驟S7)。更明確地說，爲了消除暗度成份，從所 測量之光線強度光譜T!和參考試樣之光線強度光譜1減去暗 度成份D!，並在消除暗度成份後，從晶圓^之光線強度光 譜丁!和參考試樣之光線強度光譜I得到一測量反射率I。然 後根據測量反射率V!加以檢測拋光終止點。檢測拋光終止 點後，電腦36輸出一拋光終止點訊號至控制單元22,並完 成拋光。 每次旋轉拋光墊16即測量晶圓1之光線強度光譜T!， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 555621 A7 B7 五、發明説明（21) 並將所測量之光線強度光譜儲存在電腦36之記憶體中作爲 測量資料。 拋光後，從拋光墊16取走第一晶圓W!，並再次測量暗 度成份；這次測得暗度成份爲D2(步驟S9)。測量暗度成份D2 後，將一第二晶圓W2設在拋光墊16上，並開始另一次拋光（ 步驟S10),且同時檢測拋光終止點（步驟S 11)。 此時，未改變光源亮度（L2 = L·)，並利用和第一晶圓W! 相同之參考試樣之光線強度光譜（Rd)加以檢測第二晶圓 W2之拋光終止點。而且，使用在第二晶圓w2拋光前已加以 測量之暗度成份D2。 當檢測第二晶圓W2之拋光終止點並完成拋光時，即從 拋光墊16取走第二晶圓W2(步驟S 12)。 處理第二晶圓W2後，電腦36根據第6圖中所示之流程 圖加以修正光源之亮度（步驟S 13)。 首先，電腦36從在拋光第一晶圓I時已被測量之光線 強度光譜L以及在拋光第二晶圓W2時已被測量之光線強度 光譜T2得到反射光線量之變化X，該反射光線即進入反光鏡 34之光線（步驟S13-1)。 在這狀態中，因在拋光第一晶圓W!時已被測量之光線 強度光譜Τ!和在拋光第二晶圓W2時已被測量之光線強度光 譜丁2是以上述方式被儲在記憶體中作爲測量資料，故利用測 量資料得到反射光線量之變化X。 此時之光線強度光譜從開始拋光至檢測拋光終止點已 被測量多次；因此利用在測量次數範圍內之光線強度光譜 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） . ί ί in m I —i - 1 I - --- I (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慈財產局員工消资合作社印製 -24- 555621 A7 B7 五、發明説明（22) 得到反射光線量之變化X，其中之測量次數在已被測量多次 之光線強度光譜當中已事先加以指定。 (請先閲讀背面之注意事項再填寫本頁) 然後，爲了消除光線量之變化，從反射光線量中所得 到之變化X假設爲光源亮度L3(步驟S13-2)。之後，設定假設 之光源売度L3爲一新的光源亮度（步驟S13-3)。 在這程序中，電腦36在其記憶體中儲存一光線量，根 據光線量之變化X加以修正光源亮度L，並根據表示光線量 變化X和光源亮度L之間關係之資料得到光源之新亮度l3。 當設定光源之新売度L 3時，電腦3 6輸出一控制訊號至 光源單元32之度度調整機構32B，並調整亮度，使得光源 3 2 A之亮度被設定在新亮度L3。 另一方面，由於光源亮度之改變，參考試樣之光線強 度光譜即改變；因此，根據新設定之光源亮度L3修正在拋光 第二晶圓W2時己被測量之參考試樣之光線強度光譜r2(這亦 意爲在拋光第一晶圓I時已被量之參考試樣之光線強度光 譜1)(步驟 S13-4)。 經濟部智慧財產局員工消費合作社印製 電腦36在其記憶體中儲存參考試樣之光線強度光譜R之 修正量作爲資料，該修正量是根據光源之亮度；因此，根 據表示亮度變化X和要修正之量之間關係之資料加以修正在 拋光第二晶圓W2時已被測量之參考試樣之光線強度光譜R2( 這亦意爲在拋光第一晶圓I時已被測量之參考試樣之光線 強度光_R〇。之後，以拋光第三晶圓同時之參考試樣之光 線強度光譜設定已被修正之參考試樣之新光線強度光譜 步驟 S13-5 和 S14)。 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X 297公釐〉 555621 A7 B7 五、發明説明（23) 因此修正了光源亮度和參考試樣之光線強度光譜。當 完成那些修正時，即測量暗度成份D3(步驟S15)，且隨後將 第三晶圓W3設在拋光墊16上，然後開始拋光（步驟S16，同時 檢測拋光終止點（步驟S17)。 此時，利用在新設定之亮度L3下已被設定之參考試樣之 光線強度光譜R3及開始拋光第三晶圓W3前已被測量之暗度 成份D3加以檢測第三晶圓1之拋光終止點。 當檢測第三晶圓W3之拋光終止點且完成拋光時，即從 拋光墊16取走第三晶圓w3(步驟S 18)。完成處理第三晶圓w3 後，電腦36以上述之相同方式再次修正光源之亮度。 明確地說，首先，從在拋光第二晶圓W2時已被測量之 光線強度光譜T2及在拋光第三晶圓W3時已被測之光線強度 光譜Τ3得到反射光線量之變化X。得到設定成消除變化X之 光源之亮度L4。 當得到新亮度b時，電腦36輸出一控制訊號至光源單Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1T -20- 555621 A7 B7 V. Description of the invention (18) (Please read the precautions on the back before filling this page) Therefore, the polishing termination point of the specific film is tested. More specifically, the computer 36 arithmetically calculates the ratio between the reflected light-light intensity spectrum obtained from the spectroscope 34 and a light source intensity spectrum obtained from a reference sample and stored in the memory, and the computer 36 With reference to this ratio, the polishing termination point is detected as the data of the measured reflectance. For example, refer to the change in color coordinates based on the measured reflectance data to detect the polishing end point. In this method, after the polishing pad 16 is exchanged, the light intensity spectrum of a reference sample (such as an aluminum plate) is measured before another polishing is started, and the light intensity spectrum of the reference sample is stored in a computer 36 In memory. The spectrum of the reflected light from the reference sample was measured by placing the reference sample on the viewing window 26 of the polishing pad 16. The light to be applied to the polished surface of the wafer W is passed through the viewing window 26, so the viewing window 26 and the optical system itself affect the light intensity spectrum of the wafer W measured by the spectroscope 34. Those effects of the viewing window 26 and the optical system itself deteriorate the detection of the polishing termination point and become dark components (i.e., noise components). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs For that reason, the computer 36 detects the polishing termination point after eliminating the dark component of the light intensity of the wafer W that has been measured by the spectroscope 34. Briefly, the computer 36 determines that the light intensity is a true light intensity spectrum, subtracts the darkness component from the light intensity spectrum of a wafer that has been inspected to obtain the light intensity spectrum, and the computer 36 uses the real light intensity to detect polishing termination. point. Since the darkness component is included in the light intensity spectrum of the reference sample, the polishing end point is detected in the same manner after the darkness component is eliminated. That is, the computer 36 determines that the light intensity is the real light intensity, and has been tested as the reference paper standard to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) -21-555621 A7 B7 V. Description of the invention (19) The light intensity spectrum of the test sample is subtracted from the darkness component to obtain the light intensity, and the computer 36 uses the true light intensity to detect the polishing end point. (Please read the precautions on the back before filling in this page.) In the dark component measurement, the light enters the viewing window 26 and nothing is placed on the viewing window 26 of the polishing pad 16, and the light intensity spectrum of the reflected light is measured. The measured darkness is stored in a memory built into the computer 36. As described above, in the polishing end point detection device 12 of this embodiment, light is applied to the polishing surface of the wafer W, and the light intensity spectrum of the reflected light is measured, and then according to the light intensity spectrum of the reflected light and the reference sample The ratio of the reflected light's light intensity spectrum (measured reflectance) is used to detect the polishing end point. In the polishing end point detection device 12 of this embodiment, light is applied to the polished surface of the wafer W through a viewing window 26, which has a change in transmittance due to changes in the processing conditions of the wafer W and the environment. If the transmittance changes, the amount of reflected light entering the beam splitter 34 changes. And it is not possible to accurately detect the end point of polishing. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to solve this problem, the polishing termination point detection device 12 in this embodiment automatically adjusts the brightness of the light source so that even when the conditions of the viewing window 26 are changed, it can enter the beam splitter 34 The light remains fixed. Moreover, due to the change in the brightness of the light source, the polishing end point detection device 12 automatically corrects the light intensity spectrum of the reference sample. The following will describe the processing method of the wafer W and the adjustment method of the light source brightness (refer to FIG. 5). First, when the polishing pad 16 is exchanged (step S1), the light source brightness is set below the new polishing pad 16 (step S2). The light source brightness at this time is L ·. This paper scale applies Chinese National Standard (CNS) A4 specification (21〇 × 297 mm) -22- 555621 A7 B7 V. Description of the invention (2) After setting the light source brightness, the computer 36 is under the set brightness Li Measure the light intensity spectrum of the reference sample. Then, the obtained light intensity spectrum is set with a reference light intensity spectrum Ri and stored in the memory (step S3). The initial setting is completed by the above-mentioned procedure, and then the sequential wafer processing is started (step S4). When the sequential wafer processing is started, the darkness component is measured (step S5). As mentioned above, in a state where nothing is placed in the viewing window 26 of the polishing pad 16, the darkness component is measured in the viewing window 26 by applying white light, and the light intensity spectrum of the reflected light is measured. The measured darkness D1 is stored in a memory built into the computer 36. Next, a first wafer 1 is set on the polishing pad 16 and processing of the wafer W is started (step S6), and the light intensity spectrum of the first wafer 1 is measured at the same time. The computer 36 according to the measured light intensity The spectrum T !, the light intensity spectrum R! Of the sample, and the darkness component Eh stored in the memory are used to detect the polishing end point (step S7). More specifically, in order to eliminate the darkness component, the darkness component D! Is subtracted from the measured light intensity spectrum T! And the light intensity spectrum 1 of the reference sample, and after removing the darkness component, it is removed from the wafer ^. The light intensity spectrum D! And the light intensity spectrum I of the reference sample yield a measured reflectance I. The polishing end point is then detected based on the measured reflectance V !. After detecting the polishing termination point, the computer 36 outputs a polishing termination point signal to the control unit 22 and finishes the polishing. Each time the polishing pad 16 is rotated, the light intensity spectrum T! Of the wafer 1 is measured. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)-(Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 555621 A7 B7 V. Description of the invention (21) The measured light intensity spectrum is stored in the memory of computer 36 as measurement data. After polishing, the first wafer W! Is removed from the polishing pad 16 and the dark component is measured again; this time the dark component is measured as D2 (step S9). After measuring the darkness component D2, a second wafer W2 is set on the polishing pad 16 and another polishing is started (step S10), and the polishing termination point is also detected (step S11). At this time, the light source brightness was not changed (L2 = L ·), and the polishing end point of the second wafer W2 was detected using the light intensity spectrum (Rd) of the same reference sample as the first wafer W !. Further, a darkness component D2 which has been measured before the second wafer w2 is polished is used. When the polishing end point of the second wafer W2 is detected and polishing is completed, the second wafer W2 is removed from the polishing pad 16 (step S12). After processing the second wafer W2, the computer 36 corrects the brightness of the light source according to the flowchart shown in Fig. 6 (step S13). First, the computer 36 obtains the change X in the amount of reflected light from the light intensity spectrum L that has been measured when polishing the first wafer I and the light intensity spectrum T2 that has been measured when polishing the second wafer W2. The reflected light is The light entering the reflector 34 (step S13-1). In this state, since the light intensity spectrum T! That has been measured when polishing the first wafer W! And the light intensity spectrum D2 that has been measured when polishing the second wafer W2 are stored in the memory in the manner described above The body is used as measurement data, so the measurement data is used to obtain the change X in the amount of reflected light. At this time, the light intensity spectrum has been measured many times from the start of polishing to the detection of the polishing end point; therefore, the light intensity spectrum in the range of the number of measurements is used. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). Ί ί in m I —i-1 I---- I (Please read the notes on the back before filling this page) Order printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-24- 555621 A7 B7 V. Description of the invention (22) Obtain the change X of the amount of reflected light, in which the number of measurements has been specified in the light intensity spectrum that has been measured multiple times. (Please read the precautions on the back before filling out this page.) Then, in order to eliminate the change in the amount of light, the change X obtained from the amount of reflected light is assumed to be the light source brightness L3 (step S13-2). After that, the assumed light source intensity L3 is set to a new light source brightness (step S13-3). In this procedure, the computer 36 stores a quantity of light in its memory, corrects the light source brightness L according to the change in the quantity of light X, and obtains the new brightness of the light source based on data indicating the relationship between the change in the quantity of light X and the brightness L of the light source l3. When the new brightness L 3 of the light source is set, the computer 36 outputs a control signal to the degree adjustment mechanism 32B of the light source unit 32 and adjusts the brightness so that the brightness of the light source 3 2 A is set at the new brightness L 3. On the other hand, the light intensity spectrum of the reference sample is changed due to the change in the light source brightness; therefore, the light intensity spectrum r2 of the reference sample that has been measured while polishing the second wafer W2 is corrected according to the newly set light source brightness L3. (This also means the light intensity spectrum 1 of the reference sample that has been measured when polishing the first wafer I) (step S13-4). The printed consumer computer 36 of the Intellectual Property Bureau of the Ministry of Economic Affairs' consumer cooperative stores in its memory the correction amount of the light intensity spectrum R of the reference sample as data, and the correction amount is based on the brightness of the light source; The data of the relationship between the corrected amounts is modified to correct the light intensity spectrum R2 of the reference sample that has been measured when polishing the second wafer W2 (this also means the reference sample that has been measured when polishing the first wafer I After that, the light intensity spectrum of the reference sample at the same time that the third wafer is polished is set to the new light intensity spectrum of the reference sample that has been corrected (steps S13-5 and S14). This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 555621 A7 B7 V. Description of the invention (23) Therefore, the brightness of the light source and the light intensity spectrum of the reference sample are corrected. When those corrections are completed, that is The darkness component D3 is measured (step S15), and then the third wafer W3 is set on the polishing pad 16, and then polishing is started (step S16, while the polishing termination point is detected (step S17). At this time, the newly set The light intensity spectrum R3 of the reference sample that has been set at the brightness L3 and the darkness component D3 that has been measured before starting to polish the third wafer W3 are used to detect the polishing termination point of the third wafer 1. When the third wafer is detected When the polishing termination point of W3 is completed and the polishing is completed, the third wafer w3 is removed from the polishing pad 16 (step S18). After the third wafer w3 is processed, the computer 36 corrects the brightness of the light source again in the same manner as described above. Specifically, first, the change X of the amount of reflected light is obtained from the light intensity spectrum T2 that has been measured when polishing the second wafer W2 and the light intensity spectrum T3 that has been measured when polishing the third wafer W3. To eliminate change X When the new brightness b is obtained, the computer 36 outputs a control signal to the light source unit.
元32之亮度調整機構32B，並調整光源燈泡32A之亮度爲：U 〇 另一方面，因參考試樣之光線強度光譜由於光源亮度 改變而改變，在拋光第三晶圓時已被測量之參考試樣之光 線強度光譜R3即根據新設定之光源亮度L*加以修正。所修正 之參考試樣之光線強度光譜於是被設在參考試樣之光線強 度光譜L加以使用在拋光第四晶圓。 往後以在處理各晶圓時修正光源亮度和參考試樣之光 源強度光譜之相同方式加以序向處理晶圓。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） ---------# II (請先閲讀背面之注意事項再填寫本頁) 、-ιτ 經濟部智慧財產局員工消費合作社印製 -9R . 555621 A7 B7 五、發明説明（24) (請先閲讀背面之注意事項再填寫本頁) 另言之，當完成處理晶圓Wn時，電腦36從最後一次已 被處理之晶圓Wd之光線強度TV!和目前加以拋光之晶圓wn 之光線強度Τη得到反射光線量之變化X。電腦36因此得到消 除光線量變化X之光源亮度L,並設定新亮度爲光源亮度L。 另一方面，因參考試樣之光線強度光譜由於光源亮度 之改變而改變，在拋光時之參考試樣之光線強度光譜Rn即 根據新設定之光源亮度加以修正，並將新設定之參考試樣 之光線強度光譜設成參考試樣之光線強度光譜Rn + 1加以拋光 下一晶圓Wn + l。 如上述，根據第二實施例中之拋光終止點檢測方法， 在每次處理一晶圓時即修正光源亮度和參考試樣之光線強 度光譜。因此，甚至在觀視窗26改變之情況下亦使進入分 光鏡34之光線量維持固定，並永遠能準確地檢測拋光終止 在本實施例中，藉由調整供應至光源燈泡32A之電量而 加以調整光源燈泡32A之亮度；然而，以其它方法亦可調整 亮度。 經濟部智慧財產局員工消費合作社印製 例如，如從第7圖中所見，設有不同亮度之多數光源燈 泡58A-58G，並以開關60選取性地照亮其中之一光源燈泡， 俾能調整亮度。 而且，如從第8圖中所見，一光源燈泡62是安裝於在導 軌64上滑動之滑動塊66上，並使光源燈泡62相對於照明端之 光線導引器30A來回移動，因此，改變了從光源62至觀視窗 26之光往長度並調整光源之亮度。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） " 555621 A7 B7_ 五、發明説明（25) 而且，如從第9圖中所見，在光源燈泡68之前設有一阻 擋器70,並藉由改變阻擋器70之開口 U量加以調整光源亮度 〇 然而，應了解到無意限制本發明於所發展之特定形式， 相反地，本發明在涵蓋如所附申請專利範圍中所表示之落 在本發明精神和範圍內的所有修飾，另外結構和等事物 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消费合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（2l〇X297公楚） -28 -The brightness adjustment mechanism 32B of the element 32, and the brightness of the light source bulb 32A is adjusted to: U 〇 On the other hand, because the light intensity spectrum of the reference sample changes due to the change in the light source brightness, the reference that has been measured when polishing the third wafer The light intensity spectrum R3 of the sample is corrected according to the newly set light source brightness L *. The light intensity spectrum of the modified reference sample is then set on the light intensity spectrum L of the reference sample and used to polish the fourth wafer. Thereafter, the wafers are sequentially processed in the same manner as the light source intensity and the light source intensity spectrum of the reference sample are corrected when each wafer is processed. This paper size applies to China National Standard (CNS) A4 specifications (210 × 297 mm) --------- # II (Please read the precautions on the back before filling this page), -ιτ employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative -9R. 555621 A7 B7 V. Description of the Invention (24) (Please read the notes on the back before filling this page) In other words, when the wafer Wn has been processed, the computer 36 has been processed from the last time The light intensity TV! Of the wafer Wd and the light intensity Tη of the wafer wn currently being polished yield the change X in the amount of reflected light. The computer 36 thus obtains the light source brightness L from which the light quantity change X is eliminated, and sets the new brightness to the light source brightness L. On the other hand, because the light intensity spectrum of the reference sample changes due to the change in the light source brightness, the light intensity spectrum Rn of the reference sample during polishing is modified according to the newly set light source brightness, and the newly set reference sample The light intensity spectrum is set to the light intensity spectrum Rn + 1 of the reference sample and the next wafer Wn + 1 is polished. As described above, according to the polishing termination point detection method in the second embodiment, the light source brightness and the light intensity spectrum of the reference sample are corrected each time a wafer is processed. Therefore, even when the viewing window 26 is changed, the amount of light entering the beam splitter 34 is maintained constant, and the polishing termination can always be accurately detected. In this embodiment, it is adjusted by adjusting the amount of power supplied to the light source bulb 32A. The brightness of the light source bulb 32A; however, the brightness may be adjusted by other methods. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. For example, as seen in Figure 7, there are most light source bulbs 58A-58G with different brightness, and one of the light source bulbs is selectively illuminated by the switch 60, which can be adjusted. brightness. Moreover, as can be seen from FIG. 8, a light source bulb 62 is mounted on a sliding block 66 that slides on the guide rail 64 and moves the light source bulb 62 back and forth with respect to the light guide 30A of the illumination end. Therefore, the light source bulb 62 is changed. The length of the light from the light source 62 to the viewing window 26 is adjusted and the brightness of the light source is adjusted. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) " 555621 A7 B7_ V. Description of the invention (25) Moreover, as seen from Figure 9, a stopper 70 is provided in front of the light source bulb 68, And adjust the brightness of the light source by changing the amount of opening U of the stopper 70. However, it should be understood that the invention is not intended to limit the specific form of the invention to be developed. On the contrary, the invention covers the fall as indicated in the scope of the attached patent application. All modifications within the spirit and scope of the present invention, as well as other structures and other things (please read the precautions on the back before filling out this page) Printed on the paper by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, China Paper Standards (CNS) A4 Specifications (2l0X297)