TW554461B - Manufacturing method for semiconductor, plasma processing method, and its apparatus - Google Patents

Abstract

The present invention is to irradiate the laser beam onto the chamber for detecting the scattering light from foreign matters in the chamber, so as to determine if there is any foreign matters in the chamber. The present invention employs the detection lens with wide viewing angle and deep length of focus to detect the scattering light, which is a simple detection optic system, thus it can detect the foreign matters floating in the chamber with almost the same sensitivity within a broad range.

Description

554461 A7 B7 V. Description of the invention (1) (Please read the precautions on the back before filling out this page) The present invention relates to a semi-conductor for semiconductor substrates or liquid crystal substrates, etc., and a manufacturing method and apparatus therefor, particularly regarding A semiconductor having a function of performing in-situ measurement of foreign matter floating in a processing chamber (vacuum processing chamber) for processing such as thin film formation (film formation) or etching, and the pollution status of the processing chamber Manufacturing method and device. The process using plasma, including etching equipment, can be widely used in semiconductor manufacturing processes or substrate manufacturing processes for liquid crystal display devices. An example of a plasma processing device is a plasma uranium engraving device. This plasma etching device has a reaction product generated by the plasma uranium etching reaction that accumulates on the wall surface or electrode of the plasma processing chamber. , And this is known to become a floating foreign body over time. The floating foreign matter will fall on the wafer at the moment when the plasma discharge is stopped after the etching process is completed, and become a foreign matter adhering, resulting in poor circuit characteristics or poor appearance of the pattern. Therefore, it will eventually cause a decrease in the yield rate and a decrease in the reliability of the component. The devices printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs for inspecting the foreign matter adhering to the above-mentioned wafers have been published and have been put into practical use. However, since the wafers are temporarily extracted from the plasma processing device for inspection, At the time when it is judged that a lot of foreign matter has occurred, the processing of other wafers has already begun, so there will be a problem that the yield is reduced due to a large number of defective situations. In addition, it is impossible to understand the distribution of foreign objects in the processing room and the time variation of the price after processing. Therefore, in the fields of semiconductor manufacturing or liquid crystal manufacturing, it is required that this paper standard which can monitor the pollution status in the processing room in-situ in real time is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm)- 4-554461 A7 _____B7_ printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (2) Technology. In addition, although the size of foreign objects floating in the processing chamber is in the range of submicrons to hundreds of // m, for 256Mbit DRAM (Dynamic Random Access Memory), even in the field of semiconductors highly integrated into 1Gbit RAM In terms of the minimum line width of the circuit pattern, it is as fine as 0.25 to 0.1 S / zm, so even the size of the foreign matter to be detected is required to the sub-micron level. Conventional techniques for monitoring foreign matter floating in a processing chamber (vacuum processing chamber) such as a plasma processing chamber are disclosed in JP-A-3-25-25 5 (Know-how 1), JP-A 10 -2 1 3 539 (Conventional Technology 2), JP-A 1 -25 1 252 (Conventional Technology 3), and JP 1 1 -3 3 0053 (Conventional Technology 4). The above-mentioned conventional technology 1 discloses a fine particle measuring device. The fine particle measuring device for measuring fine particles adhering to a surface of a substrate for a semiconductor device and floating fine particles by using random emission of laser light is provided with: A laser light phase modulation unit that generates two laser lights of the same wavelength but modulated by a predetermined frequency with a phase difference from each other, and allows the two laser lights to be contained in a space including the fine particles to be measured. An optical system that intersects, a light detection unit that receives light scattered by fine particles as measurement targets in the two areas where the laser light intersects, and converts it into electrical signals, and the optical detection unit The electrical signal is a signal processing unit that extracts a signal component whose phase modulation signal in the laser light phase modulation unit has the same frequency or twice the frequency, and whose phase difference with the phase modulation signal in time is constant. In addition, in the above-mentioned conventional technology 2, a particle detector is disclosed, which (please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -5- 554461 A7 B7 V. Description of the invention (3) Contains: a light transmitter that sends out a light beam irradiated across the measurement volume, includes a light detector, and collects scattered light from the measurement volume, and emits the light toward the above An optical system of a photodetector, and a detector that generates a signal indicating the intensity of light directed to the photodetector by the photodetector is connected to each other so that the signal from the photodetector can be analyzed. A pulse detector including pulses in the signal of the transmitter, and a series of particles corresponding to the particles, which will specify a series of scattered light caused by the above-mentioned particles generated by irradiating multiple light beams while the particles are moving in the measurement volume. Signal processing device for detectors of pulsed events. Also, in the conventional techniques 3 and 4, it is disclosed that light having a desired wavelength and having undergone a desired frequency modulation intensity is irradiated into the processing chamber, and is separated from the processing chamber according to the desired wavelength component. The received light is converted into a signal and the received light is converted into a signal. By extracting a desired frequency component that has undergone the intensity modulation from the signal, a foreign object that detects a signal indicating a foreign object in the plasma or floats near it is separated from the signal and detected. Surveillance technology. In particular, as shown in FIG. 15 and FIG. 16 of the conventional technology 3, an interference filter, an image transmission image, a light path correction frame, a plurality of pin holes, and a parallel output type light 2 are described. A side random light detection optical system composed of a polar array. But for 256Mbit DRAM has been highly integrated into the semiconductor field of even 1Gbit DRAM, the minimum line width of the circuit pattern has been as fine as 0.25 ~ 0.18 // m, and even the size of the foreign matter to be detected is required to the sub-micron level. However, in the above-mentioned conventional techniques 1, 2 because it is difficult to irradiate foreign matter randomly, the paper size is in accordance with the Chinese National Standard (CNS) 8-4 specifications (210 X 297 mm) installed-(Please read the precautions on the back before (Fill in this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives-6-554461 A7 B7 V. Description of the invention (4) Separate from plasma luminescence, so it is limited to the observation of large foreign objects, which is difficult to detect Sub-micron-sized tiny foreign matter. (Please read the precautions on the back before filling in this page.) On the other hand, in the above-mentioned conventional techniques 7 and 8, the light having a desired wavelength and intensity modulation according to the desired frequency is irradiated to In the processing room, the scattered light from the processing room is separated according to the above-mentioned desired wavelength component, and it is converted into a signal, and the desired frequency component with the intensity modulation described above is extracted from the signal, so that foreign objects can be disordered. The emitted light is separated from the plasma light, and the detection optical system is complicated and expensive. The present invention is directed to the small foreign matter floating in the plasma in the plasma processing chamber or in the vicinity of the sub-micron, which can greatly improve the detection sensitivity of the plasma that is separated from the plasma to emit light. Moreover, it is possible to simplify the detection optical system and monitor the pollution status in the plasma processing chamber in real time, and the plasma processing method and device capable of improving the yield. Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. The present invention is directed to small foreign matter floating in the plasma of the plasma processing chamber or in the vicinity of the sub-micron, which can greatly improve its interaction with The detection sensitivity of the plasma is separated and detected, and the detection optical system can be simplified, and the pollution status in the plasma processing chamber can be monitored in real time, and the yield can be improved to produce a high-quality semiconductor semiconductor manufacturing method. That is, in the present invention, for example, when a desired thin film formation or processing process is performed on a substrate to be processed (semiconductor substrate) in a processing chamber, the laser light of the laser light source of the 3 # part is irradiated to the process through the observation window in the future. Indoor, & outside, through a detection lens to accept foreign objects in the treated room. The paper size is applicable to Chinese National Standards (CNs) A4 specifications (210X297 mm) 554461 A7 __B7_ V. Description of the invention (5) (please first Read the notes on the back and fill in this page again.) Stray light, and judge the number, size, distribution of foreign objects and the pollution status of the interior wall from the detection signal, and display the judgment result on the display. The method for manufacturing a semiconductor and the plasma processing method of the present invention include a step of putting a semiconductor substrate into a processing chamber, a plasma generating step of generating a plasma in the processing chamber, and in the processing chamber, using the above The reaction of the generated plasma includes a manufacturing step of processing the semiconductor substrate to manufacture a semiconductor substrate, a step of detecting a foreign body that detects floating foreign bodies in or near the generated plasma in the processing chamber, and a process from the processing chamber. The step of taking out the semiconductor substrate manufactured as described above. Here, the step of detecting foreign objects further includes: printing by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, which scans and irradiates laser light through a window provided in the processing chamber through a scanning optical system In the irradiation step on the semiconductor substrate put into the processing chamber, in this irradiation step, when laser light scans the semiconductor substrate, the scattered light having floating foreign matter generated in all areas on the semiconductor substrate passes through. Wide angle of incidence on the incident surface through the window A detection step of collecting light on the incident surface according to a detection lens having a detection optical axis different from the illuminating optical axis of the scanning optical system, and detecting that the detector receives the light collected on the incident surface and converts it into a first signal. And a step of obtaining the floating foreign body information from the first signal. These and other objects, features, and advantages of the present invention can be understood from the more detailed description of the following embodiments, and disclosed in the following drawings. The paper dimensions are applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). ) -8- 554461 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (6) Schematic illustration: Figures 1 (a) and 1 (b) are plasma treatment devices (with plasma) Structure diagram of the first embodiment of the etching treatment device of the medium floating foreign object measurement device). Fig. 2 is an explanatory diagram of the situation of illuminating light, foreign matter, random light emitted by a foreign body, and the random light emitted from the interior wall of a processing chamber according to the present invention. Fig. 3 is an explanatory diagram of an embodiment of a light ray trace when detecting stray light based on a detection lens. Fig. 4 is an explanatory diagram of an embodiment of the light trails of the scattered light near the imaging surface of the detection lens based on the foreign object scattered light detected by the detection lens. Fig. 5 is an explanatory diagram of the positional relationship between the observation window, the scanning optical system, and the detection lens in the first embodiment of the present invention. Fig. 6 is an explanatory diagram of an image on the imaging surface of a detection lens according to the first embodiment of the present invention. Fig. 7 is an explanatory diagram of the positional relationship between the observation window, the scanning optical system, and the detection lens in the first embodiment of the present invention. Fig. 8 is an explanatory diagram of an image on an imaging surface of a detection lens according to the first embodiment of the present invention. Fig. 9 is an explanatory diagram showing a detection image when a detection area restriction filter (spatial filter) is provided in the first embodiment of the present invention. Fig. 10 is an explanatory diagram showing the temporal change of the detected light intensity at nine points on the substrate (crystal circle) according to the first embodiment of the present invention. Fig. 11 is a diagram showing the signal intensity of foreign matter at nine points on a substrate (crystal circle) according to the first embodiment of the present invention. (Please read the precautions on the back before filling in this page) The paper size applies to the Chinese National Standard (CNS) A4 specification (2) 0 X 297 mm) -9-554461 A7 B7 V. Description of the invention (7) Figure 12 shows Structure drawing showing the second embodiment of the plasma processing apparatus (etching processing apparatus having a measuring device for floating foreign matter in the plasma) of the present invention (please read the precautions on the back before filling this page) 〇Figure 1 (a) 1 and 3 (b) are explanatory diagrams showing images on the imaging surface of the detection lens according to the second embodiment of the present invention. Fig. 14 is an explanatory diagram showing the positional relationship between the observation window, the scanning optical system, and the detection lens according to the second embodiment of the present invention. Fig. 15 is an explanatory diagram showing a detection image when a detection area restriction filter (spatial filter) is provided in the second embodiment of the present invention. FIGS. 16 (a) and 16 (b) are explanatory diagrams showing the positional relationship between the observation window, the scanning optical system, and the detection lens according to the second embodiment of the present invention. Fig. 17 is an explanatory diagram showing an image on an imaging surface of a detection lens according to a second embodiment of the present invention. Fig. 18 is an explanatory diagram showing a detection image when a detection lens restriction filter (spatial filter) is provided in the second embodiment of the present invention. Printed in Figure 19 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, based on the processing flow, schematically illustrates the manufacturing process of the semiconductor integrated circuit device that has been introduced with the plasma processing device of the invention. Illustration. 20 (a), 20 (b), 20 (c), 20 (d), and 20 (e) are explanatory diagrams schematically showing a process of forming a contact hole according to the present invention by using a cross-sectional structure according to a processing flow. . Fig. 21 is an explanatory diagram schematically showing an example of a defect caused by an adhesion defect in the contact hole etching process of the present invention. Fig. 22 is a sectional view of a plane between the detection lens and the plasma processing chamber. This paper size applies Chinese National Standard (CNS) A4 specification (2! 〇χ297 mm) -10- 554461 A7 B7 V. Description of invention (8) Comparison table of main components 3 Current mirror 6 Lens group 8 Intensity modulator 9 Thunder Light source 10 Driver 13 Optical fiber 14 Beamsplitter 15 Photoelectric conversion element 17 Lock-in amplifier (synchronous detection circuit) (Please read the precautions on the back before filling out this page) Equipment · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 18 Computer 19 Random light 20 Observation windows 21a, 21b, 21c Foreign matter 22 Detection lens 23a, 23b, 23c Object point 24a, 24b, 24c Imaging point 26 Imaging surface 71 Plasma 80 Etching processing device 8 1 Upper electrode 82 Lower electrode 83 Signal generator 84 power amplifier

、 1T This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) -11-554461 A7 B7 V. Description of invention (9) 85 Dispenser 8 6 Processing room (Please read the precautions on the back before filling in this Page) lOOfa Foreign matter determination unit lOOfb Processing of remaining wafers lOOfc Visual inspection lOOfd Cleaning 102 Beam 601 Processed film 602 Photoresist film 603 Mask pattern 604 Photoresist pattern 605 Photoresist film 701, 702, 703, 704 Foreign object 2000 Laser illumination optical system 3000 Random light detection optical system 4000 Control and signal processing system 5000 Plasma floating foreign object measurement device Intellectual property bureau of the Ministry of Economic Affairs Employees' Cooperative Cooperative printed details of specific embodiments: Please Referring to the drawings, for the pollution status of the plasma processing chamber of the present invention, a plasma processing method and device capable of real-time monitoring and improving the yield rate, and a substrate to be processed (processed) that can reduce defects caused by foreign matter adhesion can be reduced. Object) and a semiconductor manufacturing method for manufacturing a high-quality semiconductor element and the embodiment of its production line Bright. The paper size used to manufacture this paper is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) -12- 554461 A7 B7___ 5. Description of the invention (10) Plasma etching devices such as semiconductor components include plasma etching devices and plasma Film forming device and so on. These plasma processing apparatuses are those that generate plasma in a processing chamber and perform uranium engraving on a substrate to be processed, or form a film by CVD or sputtering. Hereinafter, referring to Fig. 1 to Fig. 21, a description will be given of an embodiment in which the pollution status (foreign matter, etc.) in the processing chamber of these plasma processing devices can be monitored in real time. First, referring to Fig. 1, a plasma processing apparatus according to a first embodiment of the present invention will be described. As shown in FIG. 1 (a), the uranium engraving processing device 80 generates an electric award 71 on the electrode 82 on which the substrate W to be processed has been placed, and performs processing on the substrate W to be processed by the generated plasma. By. In this plasma processing apparatus, as the plasma processing is performed on the substrate W to be processed, the reaction product is not exhausted, and a part of the reaction product is deposited on a wall surface or an electrode in the processing chamber 86. Furthermore, as the plasma processing is performed on a plurality of substrates W to be processed, most of the accumulated reaction products will peel off and float in the processing chamber 86, and then intrude into the plasma 71, and most of them will It adheres to the surface of the to-be-processed substrate W, and manufactures the to-be-processed substrate W with many foreign material defects. Especially with the high integration of circuit patterns on the substrate to be processed, for the semiconductor field, the minimum line width of the circuit pattern is 0.25 to 0.13 // m, or it is reduced to a smaller size. Therefore, even if the size of the foreign matter adhering to the surface of the substrate to be processed is only a submicron order, a defective substrate to be processed may be manufactured. In addition, in each embodiment of the present invention described below, it means that the parallel-plate-type plasma uranium engraving used in the plasma dry etching apparatus is compliant with the Chinese National Standard (CNS) A4 specification (210 X297 mm) (Please read the notes on the back before filling out this page) Binding and printing Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -13- 554461 A7 ______B7___ V. Application example of the invention (11), but this The scope of application of the invention is not limited to this. The present invention can also be applied to various thin-film generation (processing) devices such as a sputtering device, a CVD device, or an ECR etching device, a microwave etching device, or an ashing device. First, a first embodiment of a plasma processing apparatus according to the present invention will be described with reference to Figs. 1 to 11. Figs. 1 (a) and (b) show the configuration of an etching processing apparatus provided with a foreign object monitor (foreign object detection device) in a processing chamber according to the first embodiment. As shown in FIG. 1 (a), the uranium etching processing device adjusts the output voltage of the power amplifier 84 according to the high-frequency signal from the signal generator 83, and distributes the high-frequency voltage by the distributor 85, and It is applied between the upper electrode 81 and the lower electrode 82 which are arranged in parallel in the plasma processing chamber 86. The discharge gas is plasmatized by the discharge between the two electrodes to generate electricity. Slurry 71: Uranium engraving is performed on the semiconductor substrate (wafer) W to be processed based on the active species. The high-frequency signal is, for example, about 380 to S 00 kHz. Furthermore, the etching processing device monitors the progress of the etching, and detects the end point as accurately as possible to perform etching to a predetermined pattern shape and depth. That is, when the end point is detected, the power amplifier 6 stops outputting, and thereafter, the substrate W to be processed is carried out from the processing chamber 86. In addition, the plasma uranium engraving device 80 has a microwave that introduces resonance, and performs uranium engraving by plasmatizing with a magnetic field or an electric field. In addition, the plasma film-forming apparatus includes, for example, a C VD gas supplied from an upper electrode, and the supplied CVD gas is plasmatized by high-frequency power, and reacted to form a film on a substrate to be processed. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) '-14- (Please read the precautions on the back before filling out this page) Binding-Order Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 554461 A7 B7 V. Description of the invention (12) (Please read the precautions on the back before filling out this page) Next, the plasma floating foreign body measurement device (foreign body detection device) 5000 of the present invention will be described. The foreign object measurement device 5000 in the processing room is mainly composed of a laser Ruming optical system 2000, a random light detection optical system 3 00, and a control • is number processing system 4 00. In addition, the processing room foreign body measurement device 5000th! In an embodiment, the illumination light exit portion in the laser illumination optical system 2000 and the detection light entrance portion in the random light detection optical system 3000 are configured to face an observation window provided on the side of the plasma processing chamber 86 (Window glass) 20a. That is, the stray light detection optical system 3,000 is detected through an observation window (window glass) 20a that irradiates laser light, so it mainly detects rear stray light generated from floating foreign objects. The laser illumination optical system 2000 first starts from a laser light source (for example, a solid laser beam with a wavelength of 532 nm, a He-Ne laser beam with a wavelength of 633 nm, and the Intellectual Property Bureau B of the Ministry of Economic Affairs, which prints 5 14.55 nm Ar laser beams. , Semiconductor laser light of 780 nm, etc.) 9 The emitted light beam 1 101 is incident on the intensity modulator 8. The intensity modulator 8 can be an AO (acoustic optics) modulator or an aperture that can be formed. The circular plate is made of a high-speed mechanical strength modulator and the like. Based on the control signal 19 from the computer 18, the output from the oscillator 11 is, for example, a frequency of 170 kHz and an effect ratio of 40 to 60% (preferably 50%) of a rectangular wave signal is applied to the driver 10 for driving the intensity modulator 8. The intensity of the light beam 1 0 1 can be adjusted by the intensity modulator 8 according to the above frequency. Here, for the For the present embodiment where the high-frequency voltage of the electrodes of the etching device is set to 400 kHz, the laser intensity modulation frequency may be the above-mentioned frequency 170 kHz, which is different from 400 kHz and its high-order wave components 800 kHz and 1.2 MHz. Please explain in detail later. Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -15-554461 A7 B7 V. Description of the invention (13) The intensity-modulated light beam 102 is collected by the lens group 6 The center of the substrate (wafer W). It is reflected by the current mirror (scanning optical system) 3 and is introduced into the processing chamber 86 through an observation window 20a provided on the side of the plasma processing chamber 86. In addition, the above-mentioned lens group 6 Although it is composed of an optical system capable of maintaining a light spot (sp0t) with a diameter of about 10 to 3 0 // m according to a focal depth of about 300 nm described in JP-A No. 1 1-25 1 252, However, it becomes very expensive. Here, by rotating the current mirror (scanning optical system) 3, the beam can be scanned in a plane parallel to the surface of the substrate (wafer) to be processed, so that the substrate can be processed. (Wafer) Irradiation (foreign matter detection) on the entire surface directly above W. The scanning optical system 3 is not limited to a galvano mirror as long as it is an optical system capable of scanning a light beam in a plane parallel to the wafer surface. , For example, can also be composed of rotating 稜鏡. Next, a method for detecting foreign object stray light will be described. As shown in FIG. 2, the intensity-modulated light beam 102 introduced into the plasma processing chamber 86 is irradiated by foreign objects 21a, 21b, and 21c in the processing chamber. As shown in FIG. 1 and FIG. 5 (a), in the random light emitted from the foreign body, the plane parallel to the wafer surface passes through the observation window 20 a and has a slope with respect to the irradiated optical axis. The detection optical axis of the detection optical axis 22 is detected. In this way, by making the detection optical axis of the detection lens 22 different from the irradiation optical axis of the lens group 6 including the scanning optical system 3, it is not necessary to perform the detection optical axis and irradiation. Optical axis alignment adjustment. However, when scanning by the scanning optical system 3, it is necessary to prevent a light beam that is normally reflected on the incident surface of the observation window 20a from entering the pupil of the detection lens 22. Therefore, the entrance surface of the observation window 20 can be made to correspond to the Chinese paper standard (CNS) Α4 specification (210 × 297 mm) (please read the precautions on the back before filling this page).

Printed by 1T Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs -16- 554461 A7 B7 Printed by Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (14) Slightly inclined in the vertical direction. In addition, since the detection lens 22 must completely detect the scattered light from the rear of the floating foreign object generated on the entire surface directly above the substrate to be processed (wafer) W, it must be as shown in FIG. 3, such as a wide-angle camera. A lens or a lens with a wide viewing angle such as a fisheye lens and / or a lens having a deep illuminated range depth. That is, the detection lens 22 must be at least on a surface parallel to the wafer surface, as shown in FIG. 3. It is necessary to allow the object point (floating) of the object surface (the entire surface directly above the substrate W to be processed) 25 existing in space. Foreign matter) 23a, 23b, 23c, as shown in FIG. 4, respectively, imaging points 24a, 24b, 2 4c on the imaging surface of the detection lens 22 (detection field restriction filter (spatial filter 2) 26) 〇At this time, the above-mentioned detection lens 22 is a lens having a focal depth capable of being aligned with a depth of the illuminated range of an object point existing at a position having a shortest shooting distance, and will be farther than the shortest shooting distance. All the scattered light of the foreign object generated at the position is imaged on the imaging surface of the detection lens 22. At this time, in order to collect the scattered light of the foreign object generated on the wafer W, the detection lens 22 has The distance between the closest points of wafer W is the shortest shortest shooting distance, and in order to make all the scattered light of foreign objects generated on wafer W be able to collect light with a uniform sensitivity regardless of the position where the scattered light is generated. Length above circle size The depth of the illuminated range, and in order to detect all the foreign light scattered on the wafer W, it must be a lens with a wide viewing angle. For example, as shown in FIG. 22, when plasma processing The external dimension of the chamber 86 is set to 600 mm, the size of the wafer W is 200 mm in diameter, the detection lens 22 and the plasma processing chamber 86 (please read the precautions on the back before filling this page).

1. The paper size of the 1T line is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -17- 554461 A7 B7 5. When the distance of the invention description (15) is set to 100mm, the detection lens 22 and the wafer described above The distance between the closest points is 300 mm, and the minimum required shooting distance is 300 mm or less. In addition, in order to collect all the foreign matter scattered light on the wafer w regardless of the position where the scattered light is generated, the light can be collected with a uniform sensitivity. Therefore, the depth of the necessary irradiation range depends on the diameter of the wafer. The down must be above 200mm. The angle of view required to completely detect all the foreign light scattered on the wafer W is 2 8.0 8 degrees. A lens that satisfies this performance is, for example, manufactured by Niguchi YF, AF Fisheye Nikkor 16mm F2.8D. The shortest shooting distance of the lens is 250mm, the depth of the illuminated range is from infinity to the shortest shooting distance (the focus is all aimed at the shortest shooting distance of 250mm and the image is not blurred), and the viewing angle is 180 degrees. Therefore, according to the detection lens 22 described above, it is possible to detect the scattered light of a foreign object generated above the wafer W with approximately the same sensitivity. The scattered light of the foreign object detected by the detection lens 22 is collected on the incident surface of the optical fiber 13. The incident end face (light receiving area) of the optical fiber 13 is the same as or larger than the imaging surface of the detection lens 22 described above. For example, when it is manufactured by the above-mentioned company II] > and AF Fisheye Nikkor 16mm F2.8D, because the imaging day size is a standard daylight surface size of one grid of a 35mm film, the incident end face (light receiving area) of the optical fiber 13 It is best to be 24x 3 6mm or more. However, the size of the incident end face (light-receiving area) of the above-mentioned optical fiber 13 may actually be an area where light is irradiated with a foreign substance, that is, the intensity of the intensity-modulated light beam 102 is irradiated on the wafer W. The imaging size corresponding to the field can be reduced by the incident end face (light receiving field) of the optical fiber 1 3 as necessary. In order to ensure a large light receiving surface, the above paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm): -----(Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the 1T. -18- 554461 A7 B7 V. Description of the invention (ie) Optical fiber is effective by using bundle optical fiber or Liquid Light Guide. (Please read the precautions on the back before filling this page.) The above-mentioned detection lens 22 is when the outer diameter of the processing substrate W is set to D and the distance between the detection lens 22 and the center of the processing substrate W is set to L. A deep subject having a deep object point that can be focused on a shortest shooting distance (L- (D / 2)-/ 3) located near the left end directly above the processed substrate W. The lens with a range depth will be farther from the shortest shooting distance (L- (D / 2)-/ 3) above (the entire area from the left end to the right end immediately above the substrate W) Almost all of the generated foreign object stray light is imaged on the imaging surface 26 of the detection lens 22 described above. In addition, if the size of the incident surface (light receiving area) to the optical fiber 13 is larger than the imaging surface of the detection lens 22, the detection lens 22 does not necessarily have to be a lens having a deep illuminated range depth. The important detection lens is only required to be able to incident all the rear stray light from the floating foreign matter generated on the entire surface directly above the substrate to be processed (wafer) into the incident surface of the optical fiber 13. Therefore, the detection lens 22 has at least a wide viewing angle as shown in FIG. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, the detection lens 22 will incident all incident light from the rear surface of the substrate (wafer) directly above the entire surface to the incident surface of the optical fiber 13 Therefore, it is possible to detect the scattered light of a foreign object generated in a wide space in the processing chamber 86 with approximately the same sensitivity. Of course, the detection lens 22 may form all the scattered light on the imaging surface (spatial filter 2) 26 from the rear stray light generated from the floating foreign objects on the entire surface directly above the substrate (wafer) W to be processed. At this time, as detailed later, only the paper size of the test paper is applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) -19-554461 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation (1) The height of the axis is set slightly different from the height of the irradiated optical axis, and the scattered reflected light from the wall surface is blocked by the spatial filter 2. When the outer diameter of the substrate W to be processed is set to D, the detection When the distance between the lens 22 and the center of the substrate W to be processed is set to L, the wide viewing angle (angle from outside) of the detection lens 22 must be set to tan β> ((D + α) / 2) / L When the substrate to be processed is 8 to 12 inches, since D becomes about 203 to 204 mm, (D + α) must be above 300 to 400 mm, and L must be above 500 to 750 mm. As a result The wide viewing angle of the detection lens 22 (the angle viewed from the outside) 20 is approximately 30 ° to 3 4 ° or more. If the viewing angle of the detection lens 22 is set to 2 Θ, the When the numerical aperture is set to FA, the focal distance is set to f, and the magnification is set to m, it has The relationship of the formula (1) is described below: tan 0 = (FA / 2) · (1 / f) = FA · (m / 500) (1) As described above, the scattered light of a foreign object detected by the detection lens 22 is detected by The light is collected on the incident surface of the optical fiber 13. In addition, the incident surface (light receiving area) to the optical fiber 13 is the same as or larger than the imaging surface of the detection lens 22 described above. Therefore, the optical fiber 13 can be approximately the same Sensitivity detects foreign light scattered in a wide space in the processing chamber 86. In order to ensure a large light receiving surface (incident surface), a bundle fiber or Liquid Light Guide is used. The method is extremely effective. In addition, as shown in FIG. 5 (b), it can be set at the same height as the galvano mirror (scanning optical system) 3, as shown in FIG. 5 (b). .At this time, it must be set not to allow the reaction products to accumulate on the inner wall 87 of the processing chamber 86, or allow it to pass through, so that it will not pass (please read the precautions on the back before filling this page)

A The size of the paper for binding and binding is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -20- 554461 A 7 B7 V. Description of the invention (increased here the scattered reflected light caused by laser light irradiation 1 9. Or make it reflect so that it does not enter the detection lens 22. (Please read the precautions on the back before filling in this page) However, the reaction products are usually deposited on the inner wall 87 of the processing chamber 86. When the laser light is irradiated to the inner wall, scattered reflected light with a strong intensity is generated from the location. As a result, when the height of the detection optical axis of the detection lens 22 is made and the laser light 102 is reflected by the current mirror 3 When the height of the irradiation optical axis irradiated into the processing chamber 86 is the same, as shown in FIG. 6, the scattered scattered light from the rear of the foreign object and the scattered scattered light of strong intensity generated from the inner wall of the processing chamber pass through the observation. The window 20a is incident on the detection lens 22, and the imaging surface of the detection lens 22 is formed at the same height position, so it cannot be blocked by the spatial filter 2, and it will be incident on the optical fiber 13. Therefore, it cannot be processed later Come and get rid of This is printed here by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs, as shown in Figure 7 (b). When the detection optical axis of the detection lens 22 is arranged with respect to the normal direction of the wafer surface and the current When the illuminating optical axis of the mirror (scanning optical system) 3 is at different heights, for example, at a high position, as shown in FIG. 8, the scattered light from the rear of the foreign object and the scattered reflected light 19 generated on the inner wall 87 of the processing chamber will be at The imaging surface 26 of the detection lens 22 is imaged at different height positions. Therefore, as shown in FIG. 9, the scattered light of the foreign object to be detected is blocked by the detection area restriction filter 2 (spatial filter) 2. It is impossible to detect the scattered reflected light 19 generated in the processing chamber wall 8 7 outside the imaging area. In addition, when the detection lens 22 is a lens having a deep illuminated range depth, The scattered light from the rear of the foreign object and the scattered reflected light 19 generated in the inner wall 8 7 of the processing chamber will surely be imaged at different height positions in the imaging surface 26 of the detection lens 22, so it is not necessary to adapt the paper size Chinese National Standard (C NS) A4 specification (210X297 mm) -21-554461 A7 B7 V. Description of the invention (19) There is a great difference between the height of the detection optical axis and the height of the irradiated optical axis. Moreover, such as JP 1 1 -25 1 As described in JP-252, the output end of the optical fiber 13 is connected to a monochromator (monochrometer) or an interference filter 1 4 that is set at a wavelength of the laser light 101 emitted from the laser light source 9. After separating the wavelength components of the foreign light from the plasma, the photoelectric components are converted into photoelectric conversion elements (light detectors) 15 such as photomultiplier tubes. The photoelectrically converted detection signal is used in the amplifier circuit 1 After being amplified in 6th, a lock-in amplifier (synchronous detection circuit) 17 is used to synchronously detect a rectangular wave signal with a frequency of 170kHz output from the oscillator Π for laser light intensity modulation and a ratio of 50%. As a reference signal, a random light component with a frequency of 170 kHz is extracted from the detection signal. The inventors have experimentally confirmed that the intensity of the plasma light emission is synchronized with the modulation frequency of the high-frequency power used to excite the plasma. For example, the light emission of the plasma generated by the high-frequency power of the above-mentioned plasma excitation frequency of 400 kHz is wavelength-separated by the beam splitter 14 and modulated according to the above-mentioned frequency 170 kHz which is different from the plasma excitation frequency and an integer multiple thereof. • The foreign object signal obtained by synchronous detection is separated and detected in two areas of wavelength and frequency from the plasma light emission. The present inventors have experimentally found that by this method, weak foreign matter stray light can be detected from the plasma luminous sensitivity.

The output of the lock-in amplifier (synchronous detection circuit) 17 is sent to a computer 18. In the computer 18, the scanning signal is sent to the galvano mirror (scanning optical system) 3 via the scanning optical system 4, and the foreign object signals 91a to 91e obtained at each scanning position are scanned while the beam is scanned, as shown in FIG. 1 for example. The forms shown by ○ are displayed on the display 7 one by one. As shown in Figure 11, the size of this paper applies the Chinese National Standard (CNS) 8-4 specification (210 × 297 mm) (please read the precautions on the back before filling this page).

Printed by the 1T Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -22- 554461 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (20) The output of the nth scan of the measured position and the (n -1) The difference between the outputs at the time of scanning, when only showing a change of more than a certain value, it is easy to determine the foreign object signal. In the above-mentioned display example, a coordinate is taken in a diameter direction of 0 300 mm (corresponding to a 12-inch wafer), and the measurement result of 5 lines of irradiation light on the wafer is shown with the coordinate as the horizontal axis. When random light is generated due to foreign matter in the processing chamber 86, large signals 92a, 92b, 92c, 92d, and 92e appear on the pulses shown at 5 in FIG. 11. In the computer 33, the size of the foreign body is judged by comparing the signal intensity corresponding to the particle diameter obtained in advance with the signal strength obtained from the experiment, or the number of the above-mentioned pulse-shaped signals, or The position of a foreign object is determined from the scanning position when a signal is detected. In addition, in the computer 18, [[] judges the pollution status in the processing room from the number and size of the foreign objects that are judged. When the number of foreign objects exceeds the preset threshold plutonium, a signal is sent to the uranium chip. The processing device controller 88 ends the etching processing or outputs information notifying the operator of the etching processing device of the contamination status by a warning device or the like. As described above, according to this embodiment, by setting the irradiation optical axis of the laser light having the scanning optical system 3 different from the detection optical axis of the detection lens 22, it is not necessary to align the irradiation optical axis with the detection optical axis. By adjusting and configuring the detection lens 22 with a wide viewing angle, it is possible to separate the floating foreign matter generated in the plasma processing apparatus along the entire area of the substrate to be processed from the plasma to emit light, and detect it with approximately the same sensitivity. In addition, by combining the height of the detection optical axis of the detection lens 22 with the scanning (please read the precautions on the back before filling in this page). The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ) -23- 554461 A7 ___B7 V. Description of the Invention (21) The height of the optical axis of the laser light tracing optical system 3 is set differently, and a space filter (a filter for the detection area limitation) is used to cover the inner wall of the processing chamber. The stray light is not affected by the stray light from the interior wall of the processing chamber which becomes a large noise light. In the plasma processing device, the floating foreign matter generated along the entire area of the substrate to be processed can be separated from the plasma light and detected. Out. Next, a second embodiment of the plasma processing apparatus according to the present invention will be described with reference to Figs. 12 to 18. Fig. 12 shows the structure of an etching processing apparatus having a foreign object monitor in a processing chamber according to a second embodiment. The second embodiment differs from the first embodiment in that an observation window (window glass) 20b is provided on the side wall of the plasma processing chamber 86, and a detection lens 22 detects a floating foreign object through the observation window 20b. The side light is scattered randomly. Fig. 13 (b) shows a case where the height of the detection optical axis of the detection lens 22 and the height of the irradiation optical axis of the laser light having the scanning optical system 3 are made the same. As such, in the second embodiment, the scattered reflected light 19 from the wall surface of the processing chamber is slightly incident on the detection lens 22 as shown in FIG. 14, so as shown in FIG. Filter (detection area limit filter) 2 to cover it. In addition, the computer 18 is based on the scanning signal from the drive 4 to the scanning optical system 3, and even if the output of the Lock-In amplifier (synchronous detection circuit) 17 is deleted, the scattered reflected light 19 from the wall surface of the processing chamber will be as follows. As shown in Fig. 14, a little incident on the detection lens 22 can also eliminate its influence. Of course, as shown in FIG. 16 (b), the height of the detection optical axis of the detection lens 22 and the irradiation optical axis of the laser light with the scanning optical system 3 may be adapted to the Chinese paper standard (CNS) A4 specification ( 210X297 mm) (Please read the notes on the back before filling this page)

Printed by 8T Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -24- 554461 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (22) The heights are set differently. At this time, the scattered reflected light 19 from the wall surface of the processing chamber is only slightly incident on the detection lens 22 as shown in FIG. 17. Therefore, as shown in FIG. 18, the space filter (detection Field-limiting filter) 2Make sure. As described above, even in the second embodiment, similarly to the first embodiment, the irradiation optical axis of the laser light having the scanning optical system 3 and the detection optical axis of the detection lens 22 are set to be different. It is not necessary to adjust the alignment of the irradiation optical axis and the detection optical axis, and the detection lens 22 can be formed with a wide field of view (wide outside viewing angle). Therefore, the plasma processing apparatus can be positioned along the substrate to be processed. The floating foreign matter generated in the wide space of the entire field is separated from the plasma light emission and detected with approximately the same sensitivity. Next, a third embodiment of the plasma processing apparatus of the present invention will be described. The third embodiment is different from the first embodiment in that the plasma processing chamber 86 is provided with an observation window (window glass) at a position facing the observation window 20a. The observation window can be detected by the observation window. The lens 22 detects scattered light from the front generated by floating foreign objects on the substrate W to be processed. In the third embodiment, as in the first and second embodiments, by setting the irradiation optical axis of the laser light having the scanning optical system 3 to be different from the detection optical axis of the detection lens 22, it is not necessary to perform The alignment of the irradiation optical axis and the detection optical axis is adjusted, and the detection lens 22 is formed with a wide field of view (wide outside viewing angle). Therefore, the plasma processing device can be used in a wide range along the entire area of the substrate to be processed. The floating foreign matter generated in the space is separated from the plasma light emission and detected with approximately the same sensitivity. (Please read the precautions on the back before filling out this page.) The size of the bound and bound paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -25- 554461 A7 B7 V. Description of the invention (23) (Please read first (Notes on the back page, please fill in this page) In addition, in the third embodiment, the laser light entering the plasma processing chamber must go straight, and the laser light that goes straight will not enter the detection lens 22, and An observation window having the same shape as the limit filter in the detection field, or a limit filter is provided. However, the irradiated laser light 102 is incident on the observation window 20a while scanning in the scanning optical system 3. Furthermore, because the reaction product is attached to the inside of the observation window 20a, the laser light is irradiated into the plasma processing chamber. It will not go straight and will be shot randomly. Therefore, although the intensity of the front scattered light generated from floating foreign objects is greater than the side scattered light or the rear scattered light, it is difficult to prevent the irradiated laser light from entering the detection lens 22. Therefore, the first and second embodiments Better. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, as described above, according to the first to third embodiments, the alignment of the irradiation optical axis and the detection optical axis is not required, and a wide field of view (wide viewing angle) The detection lens 22 is constituted, and is a modulation / synchronous detection method. Therefore, in the two fields of wavelength and frequency, a weak one can be separated from the plasma light emission which is a problem by the simplified detection of the foreign object detection optical system. Foreign objects illuminate the light. Compared to the limit of the minimum detection sensitivity obtained by wavelength separation in the past, which is about 1 // m, the minimum detection sensitivity can be greatly increased to about 0. 2 // m. In addition to the effect of stably detecting foreign objects, the effect of monitoring the pollution status of the interior wall of the plasma processing chamber can also be obtained. In addition, according to the first to third embodiments, foreign matter is detected on the entire surface of the substrate to be processed, and the number, size, and distribution of the foreign matter are determined, so the operator can instantly confirm the information on the display. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -26- 554461 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (24) In addition, according to the first to third implementation The form, based on the information on the number, size, and distribution of foreign objects obtained, can not only determine the pollution status of the plasma treatment chamber in real time, but also monitor the pollution status of the interior wall of the treatment chamber. Cleaning (Time) to optimize time can improve the utilization rate of the device and be able to detect a large number of foreign objects that are suddenly generated, and improve the yield. In addition, since the pollution condition in the plasma processing chamber can be constantly monitored while being continuously processed, the semiconductor substrate and the liquid crystal substrate manufactured thereby can be manufactured with high quality in an environment that does not contain foreign matter above the standard level. And highly reliable products. In addition, according to the first to third embodiments, the pollution status of a processing chamber using a dummy wafer can be judged, and the frequency of judging the pollution status by sampling inspection can be reduced, thereby reducing the cost of the dummy wafer. Next, an embodiment of a semiconductor manufacturing method using the monitoring technology of floating foreign matter in the plasma processing apparatus of the present invention will be described with reference to FIGS. 19, 20, and 21. First, the manufacturing method of the semiconductor integrated circuit device of the present invention will be described with reference to FIGS. 19 and 20. The process 100a, as shown in FIG. 20 (a), is a film forming process of forming a processed film 601 such as a silicon oxide film on the wafer W, and the process 100b is used to check the thickness of the formed film The film thickness measurement process and process i 00c shown in FIG. 20 (a) is a photoresist coating process and process 100d shown in FIG. 20 (b) where the photoresist 602 is coated on the wafer W. First, the pattern transfer process and process of transferring the mask pattern 603 to the wafer! 〇〇e As shown in Figure 20 (^), the paper size applies the Zhongguanjia Standard (CNS) M specification (21GX297). -27- (Please read the precautions on the back before filling out this page.) 、 1Τ ·· Line 554461 A7 B7__ V. Description of the invention (25) (Please read the precautions on the back before filling this page) This is a development process and process of removing the photoresist 605 in the processed part. 〇〇f As shown in FIG. 20 (d), an etching process is performed in which the photoresist pattern 604 is used as a mask, and the processed film 601 of the photoresist removal portion 605 is etched with uranium to form wiring trenches and contact holes 606. The process 100h is an ashing process for removing the photoresist pattern 604 as shown in FIG. 20 (e), and the process 100i is a cleaning process for cleaning the surface and the back surface of the wafer. The above-mentioned series of processes are, for example, applicable to the formation of contact holes. Next, referring to FIG. 21, a defect generated on the wafer due to foreign matter generated during the etching will be described. Fig. 21 is an example of a defect generated when the contact hole is etched, for example. The foreign matter 701 indicates the foreign matter adhering to the opening of the contact hole during the etching. At this time, since the uranium etching reaction is stopped by the attached foreign matter, the contact hole of the foreign matter attachment portion becomes non-opening and becomes a fatal defect. The foreign matter 702 indicates the foreign matter attached to the inside of the contact hole during the etching. At this time, since the etching reaction also stops due to the attached foreign matter, the contact hole of the foreign matter adhering portion becomes non-opening and becomes a fatal defect. The Ministry of Economic Affairs ’Intellectual Property Bureau (foreign objects printed by the Industrial and Consumer Cooperatives 703 and 704 indicate the foreign objects attached to the inside of the contact hole after the etching is completed. Most of the foreign objects attached to the position like the contact hole have a high aspect ratio. It is difficult to remove even by rinsing, and when it is as large as a foreign body, it will become a fatal defect because of poor contact. The foreign body 705 indicates the foreign body attached to the photoresist pattern 604 during etching. At this time, The etching reaction will not have any effect because of the attached foreign body 705, and will not cause fatal defects due to the attached foreign body 705. This paper size applies to China National Standard (CNS) A4 (210X297 mm) -28- 554461 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (26) So, when the foreign matter is not large enough to cause a defect even if it is attached, it is not necessary when the attached position is in the non-etching area. It will become a fatal defect, and even if a foreign object is attached to the wafer, it will not cause a fatal defect at all. In addition, compared with the foreign object 701 or the foreign object 705, Foreign matter that is easier to remove by washing, such as foreign matter 602, foreign matter 703, and foreign matter 704 that falls in contact holes with high aspect ratios, is difficult to remove by washing. In the present invention, the design In the etching process 100 f with the etching treatment device 80, the foreign matter generated in the processing chamber during the etching can be detected in real time by the floating foreign matter measurement device 5000 in the plasma, the computer 18 or a computer connected to the computer 8 Controller, in the foreign matter judging unit 100a, based on the foreign object detection result, the processed wafer is sent to the next process, and the remaining wafers are processed in sequence 100fb, or Before the next process, perform visual inspection 100fc, or suspend the process and clean the room (maintenance) 100fd. Here, the size and number of foreign objects to be detected and the specifications set in advance (foreign objects) Management criteria) to compare and select the processing to be performed next. Here, an example of the calculation method of the above-mentioned specification 値 (foreign substance management criterion) of this embodiment will be described. Even as foreign matter adheres, as already explained In wafers, fatal defects are not completely caused. However, the probability of fatal defects due to adhesion of foreign matter can be determined from the number of holes in the etching pattern, the pattern density, and the width of the wiring, and the size and individuality of the attached foreign matter. The relationship between the numbers is obtained by calculation. Therefore, the foreign matter attached to the wafer is obtained by experiments in advance (please read the precautions on the back before filling this page).

This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -29- 554461 A7 _ B7 V. Description of the invention (2 is the relationship between size and number, which can be obtained because it is detected in the uranium carving The probability of causing a fatal defect due to foreign objects. (Please read the precautions on the back before filling out this page.) The specifications (foreign object management standards) are set based on the values obtained by the above methods. The following shows this embodiment Example of setting the specification 値 In the foreign matter judging unit 100OO, the specification 设定 1 is set so that if the number N1 of a certain size or larger than the predetermined value 检测 1 is detected in a foreign matter, the probability of a fatal defect will be changed. It is very low (for example, the probability of fatal defects is less than 1%). For example, specification 値 1 is set to 10 particles with a particle size of 0.4 // m or more. In foreign matter determination section 100FA, specification 値 2 is set such that When the number N 1 of a certain size or more in the detection of a foreign object is above the regulation 値 1, but less than the regulation 値 2, it becomes a 担心 who is worried about a fatal defect (for example, the probability of a fatal defect is less than 5%) .Eg rules値 2 is set to 30 foreign particles with a particle size of 0.4 / zm or more. In the foreign matter judging unit 100a, when the number N1 of a certain size or larger in the detection of a foreign object is above 値 2 in the above specification, many fatal defects will occur ( For example, the occurrence rate of fatal defects is above 5%). According to the above specifications printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, when the number N1 of a certain size or more in the foreign matter detected in the engraving process is higher than the above regulations. When 1 is small, the probability of a fatal defect is low, so the next wafer processing 1 OOfb is performed. When the number N1 of a certain size or more in the foreign matter detected during the etching process is greater than or equal to 1 above However, if it is less than the above stipulated plutonium 2, the appearance inspection will be performed after the uranium engraving treatment. 100fc. The result of this appearance inspection shall be in accordance with the Chinese National Standard (CNS) A4 specification (210X 297 mm) -30- 554461 A7 B7 i. Description of the invention (28) (Please read the precautions on the back before filling this page). In step 100fca, if no fatal defect is confirmed, send the wafer to the next ashing (ashi ng) process 100h. As a result of the visual inspection, when a fatal defect is confirmed in step 100fca, it is judged in step 1 OOfcb whether the fatal defect is a defect that can be remedied. According to the above judgment result When it is judged as a defect that can be remedied (using the relief circuit, etc.), the wafer is sent to the next ashing process 100h. When it is judged that it cannot be remedied according to the above judgment result in step 1 OOfcb In the case of a defect, in step 100fcd, after recording the position of the defect, the wafer is sent to the next ashing process. After that, when each wafer is cut by dicing, the above-mentioned inevitable relief is included. Defective wafers are excluded. When the number N1 of a certain size or more in the foreign matter detected during the etching process is greater than the above-mentioned specification 値 2, since the wafer being processed is likely to have a large number of fatal defects, the etching process is interrupted. Cleaning (maintenance) 100fd is performed in the plasma processing chamber, and the operator of the etching apparatus is notified by an alarm displayed on a monitor screen. Printed by the Industrial and Commercial Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in an etching treatment device that does not have a measuring device for floating foreign matter in the plasma, cleaning of the processing room may not be performed at an appropriate time, so cleaning may not be required originally. When the cleaning is performed in the period of time, the utilization rate of the device is reduced. On the contrary, even when the cleaning period is over, the treatment is continuously performed, and a large number of defective products are produced, resulting in a reduction in the rate of defective products. There is also a method of performing a preliminary operation using a dummy wafer to check a foreign object in a processing chamber, and determining a cleaning period based on the result. At this time, because redundant operations are added in a series of processes, the productivity is reduced, and fake wafers are also costly. However, with the large diameter of the wafer, the paper size applies the Chinese National Standard (CNS) A4 specification (21〇 > < 297mm) -31-554461 A7 B7 V. Description of the invention (29) (Please read the If you need to fill in this page again, the cost of fake wafers will inevitably increase. Therefore, even reducing the advance work performed by fake wafers to check for foreign objects in the processing chamber will become a major problem. In contrast, according to this embodiment, since the processing of the substrate to be processed is performed while monitoring the pollution status in the processing chamber in real time, the cleaning period can be optimized, and it is not necessary to perform the process with a dummy wafer. Advance work can increase productivity and reduce the cost of fake wafers. In addition, the product manufactured by the process of this embodiment can produce a high-quality product that does not contain foreign matter of a predetermined size or more, that is, a product with high reliability. In addition, in the above embodiment, the example applied to the etching processing device is described, but as described above, the scope of application of the present invention is not limited to this. For example, by applying the present invention to ashing The device or film forming device can monitor foreign matter in the ashing device and the film forming device in real time, thereby reducing the bad situation caused by the ashing process and the film forming process in the light lithography process, and can Prevent the occurrence of defective products and increase the rate of defective products. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the present invention, the detection optical system can be simplified, and the detection sensitivity of floating foreign objects in the plasma can be greatly improved, and the effect of detecting foreign objects stably along the entire surface of the substrate to be processed is obtained. In addition, the effect of simultaneously monitoring the pollution status of the interior wall of the plasma treatment chamber is obtained. In addition, according to the present invention, since the pollution status of the processing chamber can be judged in real time based on the obtained information on the number, size, and distribution of foreign objects, the pollution status of the wall of the processing chamber can also be monitored. Applicable to China National Standard (CNS) A4 specification (21〇X 297mm) • 32-554461 A7 B7 V. Description of the invention (3〇) The equipment utilization rate can be improved by optimizing the cleaning period, which can be found early Sudden occurrence of a large number of foreign bodies, and improve the yield. In addition, since it is often processed while monitoring the contamination in the processing chamber, the semiconductor substrate or liquid crystal substrate manufactured in this way becomes a high-quality and reliable product manufactured in an environment that does not contain foreign matter above the standard gadolinium. High products. Various changes can be made without departing from the basic spirit of the present invention, and the embodiments are not used to limit the present invention. (Please read the notes on the back before filling this page)

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized to the Chinese National Standard (CNS) A4 (210X297 mm) -33-

Claims (1)

554461 A8 B8 C8 D8 6. Application for Patent Scope 1 1. A method for manufacturing a semiconductor device, including the following steps, a step of putting a semiconductor substrate into a processing chamber; a plasma generating step of generating a plasma in the processing chamber; A manufacturing process for manufacturing a semiconductor substrate by processing the semiconductor substrate based on the reaction of the generated plasma in the processing chamber; and detecting a foreign substance floating in or near the generated plasma in the processing chamber. Steps and steps of taking out the manufactured semiconductor substrate from the processing chamber. Here, the foreign object detection step further includes: passing a laser light through a window provided in the processing chamber by a scanning optical system, and scanning and irradiating the light into the The irradiation step on the semiconductor substrate in the processing chamber; in this irradiation step, when the laser light scans the semiconductor substrate, the scattered light having floating foreign matters occurring in all the areas on the semiconductor substrate is incident through the window. Wide viewing angle to the incident surface, and according to A detection lens for detecting an optical axis different from the optical axis of the scanning optical system, which collects light on the incident surface, and the detector receives the light collected on the incident surface and converts it into a first signal. The first signal is a step of obtaining the floating foreign body information. 2. If the method for manufacturing a semiconductor device according to item 1 of the scope of patent application, in the above detection step, the stray light from the floating foreign body that is collected on the incident surface by the detection lens is a rear stray light from the floating foreign body and / or Light from the side. _ 3. For the manufacturing method of the semiconductor device in the scope of patent application No. 1, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ^-(Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-34-554461 A8 B8 C8 D8 VI. Application for Patent Scope 2 (Please read the precautions on the back before filling out this page) where the above-mentioned detection lens has a way to give way to the detection lens And the foreign object stray light generation point closest to the detection lens in the area where the laser beam is irradiated in the processing chamber, and the foreign object farthest from the detection lens in the detection lens and the area where the laser beam is irradiated The stray light from a foreign object in the processing chamber, which occurs at an arbitrary point between the stray light generating points, is imaged at a deep illuminated range depth at the incident surface without being defocused. 4. According to the method for manufacturing a semiconductor device according to item 1 of the patent application scope, a spatial filter is used to cover the scattered reflected light from the wall surface of the processing chamber through the detection lens incident to the incident surface in the above detection step. 5. According to the method for manufacturing a semiconductor device according to item 1 of the scope of patent application, in the above detection step, the light collected on the incident surface is guided to the detector through an optical fiber. 6. If the method for manufacturing a semiconductor device according to item 1 of the patent application scope, in the above detection step, the height of the plane including the optical axis of the scanning optical system and the height of the plane including the optical axis of the detection lens different. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 7. A method for manufacturing a semiconductor device, including the following steps, a step of putting a semiconductor substrate into a processing chamber; a plasma generating step of generating a plasma in the processing chamber; A manufacturing process for manufacturing a semiconductor substrate by processing the semiconductor substrate based on the reaction of the generated plasma in the processing chamber; and detecting a foreign substance floating in or near the generated plasma in the processing chamber. Steps and; This paper size applies to China National Standards (CNS) A4 (210X297 mm) -35-Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 554461 A8 B8 C8 D8 々, apply for patent scope 3 Take the above from the processing room The step of manufacturing the semiconductor substrate. Here, the above-mentioned foreign object detection step further includes: passing the intensity-modulated light according to a predetermined frequency by an intensity modulator through a window provided in the processing chamber by a scanning optical system, While scanning and irradiating the semiconductor substrate that was put into the processing chamber In this irradiation step, when the intensity-modulated light is scanned on the semiconductor substrate, the scattered light from the floating foreign matter generated in all the areas on the semiconductor substrate will enter the incident through the window. A detection lens with a wide viewing angle of the surface collects light on the incident surface, and the detector receives the light collected on the incident surface, and converts it into a first signal detection step; and from the first signal, A step of extracting a signal component having the same frequency as that of the light whose intensity is modulated according to the predetermined frequency, to obtain the floating foreign object information; 8. The method for manufacturing a semiconductor device according to item 7 of the scope of patent application, wherein in the above detection step, the stray light from the floating foreign body collected by the detection lens on the incident surface is the random light and / or side from the side after the floating foreign body. The party shot light randomly. 9. In the method for manufacturing a semiconductor device according to item 7 of the scope of patent application, in the above detection step, the detection lens has a position closest to the above in a field where the detection lens and the laser beam are irradiated in the processing chamber. An arbitrary point between the foreign object stray light generation point of the detection lens and the foreign object stray light generation point farthest from the detection lens in the detection lens and the area where the laser beam is irradiated is from the processing room. The scattered light of a foreign object is imaged without defocusing. The paper size on the above incident surface is applicable to China National Standard (CNS) A4 (210X297 mm). -Line (please read the precautions on the back before filling this page) -36-554461 A8 B8 C8 D8 VI. Patent application range 4 Deep illuminated range depth, use this detection lens to collect the scattered light from the floating foreign matter above . 10. As in the method for manufacturing a semiconductor device according to item 7 of the scope of patent application, a spatial filter is used to cover the scattered reflected light from the wall surface of the processing chamber through the detection lens incident on the incident surface in the above detection step. 11. According to the method for manufacturing a semiconductor device according to item 7 of the scope of patent application, in the above-mentioned detection step, the light collected on the above-mentioned incident surface is guided to the detector through an optical fiber. 12. As for the method of manufacturing a semiconductor device according to item 7 of the scope of patent application, in the above detection step, the height of the plane including the optical axis of the scanning optical system and the height of the plane including the optical axis of the detection lens different. 13. In the method for manufacturing a semiconductor device according to item 7 of the scope of patent application, in the above-mentioned detection step of the above-mentioned foreign object detection step, the intensity-modulated light has a predetermined wavelength and is separated from the light collected on the incident surface. The above-mentioned light component having a predetermined wavelength is obtained, and the separated detector receives the separated detector, and converts it to a first signal. 14. For the method of manufacturing a semiconductor device according to item 7 of the scope of patent application, in the above-mentioned foreign matter detection step, the predetermined frequency adjusted by the intensity described above is compared with the excitation frequency or luminous rate of the plasma generated by the above. The frequencies obtained by the integer multiples are different. 1 5. According to the method for manufacturing a semiconductor device according to item 7 of the scope of patent application, the above-mentioned foreign matter detection step further includes analyzing the size of the contaminated paper in the processing chamber or on the semiconductor substrate according to the floating foreign matter information obtained above. Applicable to China National Standard (CNS) A4 specification (210X297mm) ¾-- (Please read the precautions on the back before filling out this page}, 11 'Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economics-37- 554461 Α8 Β8 C8 D8 VI. Steps of applying patent scope 5 Dyeing status (Please read the precautions on the back before filling out this page) I6. If the method of manufacturing a semiconductor device under patent scope No. 15 includes the analysis results based on the above pollution status To control the cleaning step of the processing chamber. 17. A plasma processing method includes the following steps: a step of putting a semiconductor substrate into the processing chamber; a plasma generating step of generating a plasma in the processing chamber; In the processing chamber, the semiconductor substrate is processed by the above-mentioned plasma reaction to produce a semiconductor. Substrate manufacturing steps; Foreign object detection steps to detect foreign objects floating in or near the generated plasma in the processing chamber; and Steps to take out the manufactured semiconductor substrate from the processing chamber. Here, the foreign object detection The steps further include: an irradiation step of scanning laser light onto a semiconductor substrate put into the processing chamber by scanning laser light through a window provided in the processing chamber by a scanning optical system; printed by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In this irradiation step, when the laser light scans the semiconductor substrate, the scattered light from the floating foreign matter occurring in all the areas on the semiconductor substrate will enter the incident surface through the window with a wide viewing angle. The scanning optical system irradiates a detection lens having a detection optical axis with a different optical axis and collects light on the incident surface, and the detector receives the light collected on the incident surface and converts it into a first signal detection step; and 1 signal extraction has the same frequency as the light whose intensity is modulated by the frequency set above. To obtain the above-mentioned scale of floating foreign body capital, and apply the Chinese National Standard (CNS) A4 specification (2 ×× 297 mm) -38-554461 A8 B8 C8 D8, the procedure of applying for patent coverage 6. For example, if the plasma processing method of item 17 in the scope of patent application is applied, the detection lens in the detection step of the above-mentioned foreign object detection step has all the fields of the field scanned by the intensity-modulated light occurring on the substrate to be processed. The light from floating foreign objects is imaged at the deep focal depth of the imaging surface. 19. For example, the plasma processing method of the 17th scope of the application for a patent, in the detection step of the above-mentioned foreign object detection step, a space filter is used to cover the borrow Scattered reflected light from the detection lens incident on the incident surface and from the wall surface of the processing chamber. 20. A plasma processing method includes the following steps: a step of putting a substrate to be processed into the processing chamber; and within the processing chamber Plasma generation step for generating plasma; In the processing chamber, the substrate to be processed is reacted with the plasma generated by the reaction. A processing step for performing processing; a foreign object detection step for detecting a foreign substance in the plasma generated above or in the vicinity of the plasma generated in the processing chamber; and a removal step for removing the substrate to be processed that has undergone the processing from the processing chamber, Here, the above-mentioned foreign object detection step further includes the following steps: Light having a predetermined wavelength and intensity-modulated by an intensity modulator at a predetermined frequency is scanned by an optical system through a scanning optical system provided in the processing chamber. Window, and scan the irradiation step of irradiating the processed substrate put into the processing chamber; In this irradiation step, when the intensity-modulated light is scanned on the processed basic paper size, the Chinese National Standard (CNS) A4 is applied Specifications (210X297mm) --------- ^ ------ 1T ------ 0 (Please read the precautions on the back before filling out this page) Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the cooperative-39- 554461 A8 B8 C8 D8 6. Scope of patent application 7 (Please read the precautions on the back before filling this page) On the board, you can use a The scattered light of the floating foreign matter in all the fields passes through the window and enters the detection lens with a wide viewing angle of the incident surface to collect the light on the incident surface, and the light collected from the incident surface is based on the light having the predetermined wavelength. The components are separated, and a detector detects the separated light component and converts it into a first signal. A detection step and; by extracting light from the first signal, the light having intensity modulation according to the predetermined frequency is extracted. The step of obtaining the above-mentioned floating foreign body information by using signal components of the same frequency. 2 1. According to the plasma processing method of claim 20 of the scope of patent application, the detection lens in the detection step of the above-mentioned foreign object detection step has a stray light from floating foreign objects generated in all areas on the substrate to be processed. Deep focal depth imaging on imaging surface. 22. According to the plasma treatment method of the scope of application for patent No. 20, in the detection step in the above-mentioned foreign matter detection step, a space filter is used to shield the light coming from the processing chamber wall from the incident surface through the detection lens. Random light. 23. —A plasma processing device comprising the following components: a processing chamber of an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has an exhaust mechanism for exhausting the inside and maintaining a predetermined pressure; supplying a desired gas To the gas supply mechanism of the processing chamber that evacuates the inside by the exhaust mechanism to the vacuum; in a state where a desired gas is supplied to the inside of the processing chamber by the gas supply mechanism, in the processing chamber The plasma generation mechanism that generates plasma in the country; This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -40-554461 A8 B8 C8 D8 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Patent Scope 8: The irradiation optical system that scans the inside of the processing chamber that generates plasma by the plasma generating mechanism through a window provided in the processing chamber from the outside of the processing chamber; This irradiation optical system is used to irradiate laser light and scan it, thereby causing disturbance caused by foreign objects floating inside the processing chamber. A detection optical system for detecting light through the window; and processing the signal obtained by detecting the scattered light from the floating foreign body by the detection optical system in synchronization with the scanning of the laser light, and obtaining the signal in the processing chamber. A processing unit for information about the distribution status of floating foreign objects inside. 24. If the plasma processing device according to item 23 of the patent application, the processing chamber mechanism is provided with an electrode portion inside, and by applying high-frequency power to the electrode portion of the processing chamber, it is possible to use the inside of the processing chamber by High frequency discharge to generate plasma. 25. For example, the plasma processing device of the scope of application for patent No. 23, wherein the above-mentioned irradiation optical system irradiates the laser light with intensity modulation according to a frequency different from the high-frequency power through a window provided in the processing chamber to the above The interior of the processing chamber is scanned. 26. For example, the plasma processing apparatus according to item 23 of the application, wherein the processing chamber mechanism has a mounting portion on which a substrate to be processed is placed, and the irradiation optical system scans along the entire surface of the substrate to be processed. It is placed above the substrate to be processed in the mounting section. 27. If the plasma processing device according to the scope of patent application No. 23 is provided, the display unit can further display a result processed by the processing unit. This book is applicable to China National Standards (CNS) A4 (210X297 mm): -41-(Please read the precautions on the back before filling out this page) 554461 A8 B8 C8 D8 Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative 6. Application scope 9 2S. For example, the plasma processing device for scope 27 of the application for patent, where the display unit and the processing result of the processing unit indicate the distribution of floating foreign matter inside the processing chamber. . 29. For the plasma processing device according to item 23 of the application, wherein the detection optical system is provided with a lens portion, the laser light is scanned by the above-mentioned irradiation optical system, and the lens portion is used to detect the floating light. Stray light from foreign objects inside the processing chamber. 30. The plasma processing apparatus according to item 23 of the patent application, wherein the detection optical system is provided with a piece of scattered reflected light from the wall surface of the processing room that is incident on the lens portion. 3 1. The plasma processing apparatus according to item 23 of the scope of patent application, wherein the detection optical system is provided with a light collection lens and a detector that can collect the scattered light generated by a foreign object through the window and collect light for detection. The optical lens has a foreign light stray light generation point closest to the detection lens in a field where the collection lens and the laser beam are irradiated in the processing chamber, and the detection lens and the laser beam are irradiated. In the field, the random light from the foreign object in the processing chamber generated at an arbitrary point between the foreign object random light occurrence points farthest from the detection lens is imaged at a deep depth of the incident surface without being defocused. Photo range depth. (Please read the precautions on the back before filling this page). Binding and Binding _ This paper size is in accordance with China National Standard (CNS) A4 (210X297 mm) -42-