552452 A7 —_____ B7 五、發明説明（i ) 此申請案在美國已於2〇〇〇年9月5日提出申請，專利申請 號碼為 09/654,753。 發明領域 本發明係關於封閉電場發射裝置之封閉件及方法，而更 特別的是關於在具有平坦輪廓裝置中的高真空封閉件。 發明背景 為了達到高效率及長的作業壽命，平坦面板顯示器包含 電場發射裝置需要好的真空狀態。該方法的使用使封閉真 2包封大大地影響整體真空狀態。由於電場發射裝置 比/、他、吧大夕數的真空產品，具有更大的表面積對體積比 ，所以其產生好的真空狀態的任務比起其它真空裝置是更 加困難的。 製造封閉真空包封的許多方法，即，電場發射裝置封包 ，使用熔化的框架來封閉正極與陰極。在標準的電場發射 裝置封包建造中’封閉冑，在最初加熱期間或加熱除去氣 體階段，熔化的框架搁在陰極上。雖然該熔塊被設計，僅 為了在μ封閉期間，短時間作為與陽極及陰極間的連繫 ’而目前已存在的方法’在延長的期間’讓熔塊與陰極相 互作用，如此通常會損害陰極，而且該封閉件會是失敗的 〇 因此，對改善製造封閉真空包封的方法有一要求，該要 求為不讓熔塊與陰極相互作用。 ^ 圖示簡诚 參考下面的圖示： 552452 A7 B7 五、發明説明（2 ) ~-- 圖1係根據本發明封閉電場發射裝置包封的剖面圖；以及 圖2及3說明封閉處理的連續步驟。 最佳實施例的摇诚 現在參考圖示，圖丨係說明具有平坦形狀因子的高真空電 場發射顯示器10。顯示器10包含包封丨丨，而包封丨1包括= 主要平行間隔開的破璃面12與13及一連續框架14，其中連 續邊緣15介於框架14與玻璃面12之間，而連續邊緣16介於 框架1 4與玻璃面丨3之間。為了稍後於此專利說明書中說明 的理由，連續邊緣15與玻璃面12的構造體17封閉在一起， 而構造體1 7可為二氧化矽（S丨〇 2 )，或其他的氧化物。構造 體1 7是連續的，而且被視為是玻璃面丨2的一部份。邊緣工$ 及1 6在玻璃面1 2與1 3之間提供適當的真空封閉件（例如， 至少大約2 X 1 〇 -1 3陶爾公升/秒），而每個邊緣最好包含玻 璃熔塊。通常，如熟習此項技藝者所瞭解的，在包封丨丨中 儲藏有電子裝置，所以包封丨丨為了能正常作業，需要具有 相‘南的真2狀怨。顯示器1〇包括如電場發射裝置（fed) 封包的電子裝置，用以製圖、寫、等等。由於電場發射裝 置封包於該技藝中是眾所週知，所以於此範例中除了描述 在形成圖像、文字、等等時，玻璃面12是陰極，而玻璃面 1 3是陽極外，想當然而不需進一步描述其結構及作業。而 且必要時玻璃面1 2及1 3可被顛倒過來。雖然使用名詞‘‘玻 璃”來描述面1 2及1 3，但熟習此項技藝者應瞭解，面1 2與 1 3及邊緣1 5與1 6可以使用任何材料，但於此希望用名詞玻 璃來具體化此等材料。 ___^____ 本紙張尺度適用中國國家橾準(CNS) A4規格(210X 297公釐） 552452 A7 B7 五、發明説明（3 將玻璃面12與13及框架14封閉在一起之前，玻璃面。與 13及框架14由不同的部件组成，該部件係製造成分離的組 件。其中框架14為慣用且熟知的玻璃結構，該玻璃結構在 兩玻璃面上提供熔塊，形成邊緣15及16來幫助封閉。熟習 此項技蟄者通常稱此框架為“熔化的框架或熔塊框 架’’〈“fritted frame or frit frame，，〉。如同許多已知的 陰極’陰極1 2除了別的材料外，還包括氮化物層及麵。於 正規的封閉處理中，玻璃面12與13及框架14係放置於幾乎 完全真空的裝置中，接著將溫度加熱収以㈣該溶塊， 而加熱的時間週期 < 例如2_8小時而最好為6小時>需長到足 以除去 < 加熱除去氣體 > 大部分的雜質。 芫成加熱週期後，玻璃面丨2與丨3可由框架丨4封閉在一起 。然而，由於熔塊與鉬會發生相互作用，而此實例中熔塊 與玻璃面1 2間所有的接觸為陰極，因此彼此會相互作用而 危及毁壞玻璃面12。當熔塊處於高溫時，不僅會與鉬發生 相互作用，貫際上也會產生泡泡，如此會導致封閉件中有 漏洞。為防止熔塊與玻璃面丨2間的相互作用，破璃面1 2具 有二氧化矽構造體17，將二氧化矽構造體17對著邊緣。封552452 A7 —_____ B7 V. Description of Invention (i) This application was filed in the United States on September 5, 2000, and the patent application number is 09 / 654,753. FIELD OF THE INVENTION The present invention relates to closures and methods for closing electric field emission devices, and more particularly to high vacuum closures in devices with flat contours. BACKGROUND OF THE INVENTION In order to achieve high efficiency and long operating life, flat panel displays including electric field emission devices require a good vacuum state. The use of this method makes the closed true 2 encapsulation greatly affect the overall vacuum state. Because the electric field emission device has a larger surface area to volume ratio than vacuum products, the task of generating a good vacuum state is more difficult than other vacuum devices. Many methods of manufacturing closed vacuum encapsulation, ie, electric field emission device encapsulation, use a molten frame to enclose the positive and negative electrodes. In the construction of a standard electric field emission device package, 'closed plutonium', the molten frame rests on the cathode during the initial heating or gas removal phase. Although the frit is designed to serve as a connection with the anode and cathode for a short period of time during the μ closure period, the existing method is to allow the frit to interact with the cathode over an extended period of time. The cathode, and the closure will fail. Therefore, there is a requirement to improve the method of manufacturing a closed vacuum envelope, which does not allow the frit to interact with the cathode. ^ Refer to the following diagrams: 552452 A7 B7 V. Description of the invention (2) ~-Figure 1 is a cross-sectional view of a sealed electric field emission device according to the present invention; and Figures 2 and 3 illustrate the continuous process of the sealing process. step. Reference to the Preferred Embodiment Referring now to the drawings, the figure illustrates a high vacuum electric field emission display 10 having a flat form factor. The display 10 includes an encapsulation, and the encapsulation, 1 includes = mainly parallel and spaced broken glass surfaces 12 and 13 and a continuous frame 14, wherein the continuous edge 15 is between the frame 14 and the glass surface 12, and the continuous edge 16 is between the frame 14 and the glass surface 丨 3. For reasons explained later in this patent specification, the continuous edge 15 is closed with the structural body 17 of the glass surface 12, and the structural body 17 may be silicon dioxide (SiO2), or other oxides. The structure 17 is continuous and is considered to be part of the glass surface 2. Edge workers $ and 16 provide suitable vacuum closures between glass faces 12 and 13 (for example, at least about 2 X 1 0-1 3 Tao l / s), and each edge preferably contains glass melt Piece. Generally, as those skilled in the art know, electronic devices are stored in the envelope, so in order to work properly, the envelope needs to have a ‘Southern-like’ complaint. The display 10 includes an electronic device such as an electric field emission device (fed) packet for drawing, writing, and the like. Since the encapsulation of the electric field emission device is well known in this technology, in this example, in addition to describing that when forming the image, text, etc., the glass surface 12 is the cathode and the glass surface 13 is the anode, it is taken for granted without further consideration. Describe its structure and operations. And if necessary, the glass faces 12 and 13 can be reversed. Although the term "glass" is used to describe faces 12 and 1 3, those skilled in the art should understand that faces 12 and 13 and edges 15 and 16 can use any material, but here we hope to use the term glass To materialize these materials. ___ ^ ____ This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 552452 A7 B7 V. Description of the invention (3 Enclose glass faces 12 and 13 and frame 14 together Previously, the glass surface was composed of different components from 13 and frame 14, which were manufactured as separate components. The frame 14 is a conventional and well-known glass structure that provides frit on the two glass surfaces to form edges 15 and 16 to help seal. Those familiar with this technique usually call this frame a "melt frame or frit frame," "Fritted frame or frit frame,". Like many known cathodes In addition to other materials, it also includes a nitride layer and a surface. In a regular sealing process, the glass surfaces 12 and 13 and the frame 14 are placed in an almost completely vacuum device, and then the temperature is heated to collect the molten mass, and When heated The period < for example 2-8 hours and preferably 6 hours > needs to be long enough to remove < heat to remove gas > most of the impurities. After the heating period is completed, the glass surface 2 and 3 can be closed by the frame 4 Together. However, since the frit and molybdenum will interact, in this example all the contacts between the frit and the glass surface 12 are cathodes, so they will interact with each other and endanger the glass surface 12. When the frit is at high temperature Not only will it interact with molybdenum, but it will also produce bubbles in the interim, which will cause loopholes in the closure. In order to prevent the interaction between the frit and the glass surface, the glass surface 12 has silicon dioxide. Structure 17 with silicon dioxide structure 17 facing the edge.
閉在一起。而二氧化矽構造體17可以作為熔塊與破璃面U 間的保護屏障。然而，由於熔塊在高溫時會消耗二氧化矽 ，所以擴大熔塊與二氧化矽構造體17間的接觸面，如此會 讓熔塊消耗二氧化矽構造體丨7，而與玻璃面丨2相互作用。 本發明能防止上述情況發生’並且保證可製造出模範的封 閉件。 ’ 本纸張尺度適用中國國家標準(CNS) A4规格(210X297公釐）Close together. The silicon dioxide structure 17 can serve as a protective barrier between the frit and the broken glass surface U. However, since the frit consumes silicon dioxide at high temperatures, the contact surface between the frit and the silicon dioxide structure 17 is enlarged, which will cause the frit to consume the silicon dioxide structure 7 and the glass surface 2 interaction. The present invention prevents the above-mentioned situation from happening 'and guarantees that an exemplary closure member can be manufactured. ’This paper size applies to China National Standard (CNS) A4 (210X297 mm)
裝 气丁Filling
線 552452 A7 ______ B7 五、發明説明（4 ) 通常本發明的最佳封閉處理如下所述。玻璃面1 2與1 3及 框架1 4被放置於幾乎完全真空的裝置中，並將其排列成平 行間隔開的狀態，框架1 4放置在玻璃面1 2與1 3之間的適當 位置’通常如圖2所示。然後加熱真空室讓溫度高到足以去 除雜質，並且使熔塊，即邊緣丨5與丨6熔化。而加熱及去除 氣體的步驟，通常需花2 - 8小時而最好大約是6小時。而大 約於此最佳方法的此刻，玻璃面丨3及框架丨4 一起移動，並 在玻璃面1 3及框架1 4間產生邊緣1 6，通常如圖3所示，於 一大致連、續運動中，在此較佳程序中，玻璃面丨2及框架j 4 一起移動，以在玻璃面丨2及框架丨4間產生邊緣丨5，通常如 圖3所示，如此即完成玻璃面丨2與丨3的封閉，通常如圖1所 不。封閉邊緣1 5與二氧化矽構造體丨7是為了防止框架與破 璃面的相互作用。 違最佳方法於此刻，需要1 〇到3 〇分鐘的最後固化週期。 在最後的固化週期，真空室在整個固化時間的持續期裡， 度需維持在預定的程度，如此可完成邊緣1 6及丨7的固化 處理。由於在鬲溫時，熔塊會消耗二氧化矽，所以最後的 固化期最好比最初加熱期短，或至少比整個固化時間短， 如此將沒有足夠的時間，讓熔塊將二氧化矽構造體消耗到 月匕夠讓溶塊與玻璃面1 2相互作用的程度，玻璃面i 2即為陰 極。於此最佳貫施例中，最後的固化週期高於大約2 〇分鐘 。整個固化時間結束時，開始冷卻包封丨丨。包封丨丨可在真 空室裡冷卻或移入冷卻室或站。 ' 因此，揭露以平坦形成因子組裝高真空電場發射顯示器 ---：-— -7-_ 本紙張尺度適用中國國豕標準(CNS) A4規格(21〇 X 297公董） _ _Line 552452 A7 ______ B7 V. Description of the invention (4) Generally, the best sealing treatment of the present invention is as follows. The glass surfaces 12 and 13 and the frame 14 are placed in an almost completely vacuum device and arranged in a parallel and spaced state. The frame 14 is placed in the appropriate position between the glass surfaces 12 and 13 ' Usually shown in Figure 2. The vacuum chamber is then heated to a temperature high enough to remove impurities and melt the frits, i.e. edges 5 and 6. The heating and degassing steps usually take 2-8 hours and preferably about 6 hours. At about this moment of the best method, the glass surface 丨 3 and the frame 丨 4 move together, and an edge 16 is created between the glass surface 13 and the frame 14, usually shown in Fig. 3, In the movement, in this preferred procedure, the glass surface 丨 2 and the frame j 4 are moved together to create an edge 丨 5 between the glass surface 丨 2 and the frame 丨 4, usually as shown in FIG. 3, so that the glass surface is completed 丨The closure of 2 and 3 is usually not shown in Figure 1. The closed edges 15 and 7 are used to prevent the frame from interacting with the glass surface. Deprecated method At this point, a final curing cycle of 10 to 30 minutes is required. In the final curing cycle, the vacuum chamber needs to be maintained at a predetermined degree during the duration of the entire curing time, so that the curing treatment of edges 16 and 7 can be completed. Since the frit consumes silicon dioxide at high temperatures, the final curing period is preferably shorter than the initial heating period, or at least shorter than the entire curing time. This will not allow enough time for the frit to construct the silicon dioxide. The body is consumed to such an extent that the molten mass can interact with the glass surface 12 and the glass surface i 2 is the cathode. In this preferred embodiment, the final curing cycle is higher than approximately 20 minutes. At the end of the entire curing time, cooling encapsulation begins. Encapsulation can be cooled in a vacuum chamber or moved into a cooling chamber or station. 'Therefore, it is revealed that a high vacuum electric field emission display is assembled with a flat formation factor. ---: --- -7-_ This paper standard applies to China National Standard (CNS) A4 specification (21〇 X 297 public directors) _ _