TW550235B - Micro-machined tunable filter and low-temperature method of fabricating the same - Google Patents
Micro-machined tunable filter and low-temperature method of fabricating the same Download PDFInfo
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550235550235
本發明係關於_錄#纲 一 低溫微加工技術製作 ^ = 70件,特別是關於一種利用 的微i先調頻濾波器的設計製造。 【習知技術之描述】 光調頻元件原、採# 光調頻元件的重I柯 的應用,同時也可以i 是在波長多工(wdm)光通訊 應用。 作為光開關、光譜檢測以及其他光學 常見的光調頻元杜H f w ηThe present invention relates to the production of low-temperature micromachining technology ^ = 70 pieces, in particular to the design and manufacture of a micro-frequency modulation filter used first. [Description of the conventional technology] The application of the optical frequency modulation element and the optical signal frequency modulation element can also be used in the wavelength multiplexing (wdm) optical communication application. H f w η as a common optical FM element for optical switches, spectral detection and other optics
干涉儀)原理,基本架構/ ; abry_Per〇t干涉儀(簡稱FP 調變方式為利用壓電、材料為^面所組成的可調變(傳統 r ·、 材枓調制)光學共振腔(Resonant Ιί 2 i f振腔長度滿足特定光波長h的半整數倍 表階數)時’輪出的光脈衝具有非常窄的半高寬 (FimFuU Width of Half —特性。 明參見圖1,其係為FP共振腔光輸出之基本特性。為 了更清楚了解其設計可能面對之問題,以下將就Fp共振腔 的幾項基本學理作探討。其一為可調變光譜範圍FSR(Free Spectral Range),其二為特定光波長的解析度识 (Resolving Power),代表輸出光波中心波長λ〇與強度一Interferometer principle, basic architecture /; abry_Per0t interferometer (abbreviated as FP modulation method is the use of piezoelectric, material is ^ plane composed of adjustable (traditional r ·, material 枓 modulation) optical resonant cavity (Resonant Ιί 2 If the cavity length satisfies the order of a half-integer multiple of the specific light wavelength h), the light pulses out of the wheel have a very narrow FimFuU Width of Half—characteristics. Refer to Figure 1 for the FP resonance. The basic characteristics of cavity light output. In order to better understand the problems that its design may face, the following will discuss several basic theories of Fp resonant cavity. One is the adjustable spectral range FSR (Free Spectral Range), and the other is Resolving Power for a specific light wavelength, which represents the center wavelength λ of the output light wave and the intensity one
550235 五、發明說明(2) 半時的分布寬度△又^比。此二者與其他製造參數之間的 關係表示如下: FSR « λ\ /2n fd Cl) m = / ο \ Αλ0 (1 — R) 20 v Z y550235 V. Description of the invention (2) The half-time distribution width △ is ^ r. The relationship between these two and other manufacturing parameters is expressed as follows: FSR «λ \ / 2n fd Cl) m = / ο \ Αλ0 (1 — R) 20 v Z y
式中為輸出光波的中心波長;d為共振腔長度(兩鏡面 之間距);nf為該間距内之流體(通常為空氣)光折射係 數;R為鏡面的反射率。Where is the center wavelength of the output light wave; d is the length of the resonant cavity (the distance between the two mirror surfaces); nf is the refractive index of the fluid (usually air) within this interval; R is the reflectivity of the mirror surface.
在設計FP共振腔時通常要求可調變光譜範圍FSR大並 且輸出波長的解析度$高。然而,由公式(1)與(2)可以發 現此二者是無法同時兼顧的。公式(1)說明FSR與d成反比 關係,而公式(2 )解析度π卻與d成正比。也就是說若需要 寬廣的可調變光譜範圍,則所得到的個別波長解析度將較 差。因此兩者之間必須有一妥協。舉一例子而言:其中 λ0 = 1·5ιιιη,nfd=10mm,R = 90%,則91 將高達300,000 以上(八 λ 〇將小於0. 0 0 5nm),代表了非常好的光譜解析能力。然 而其可調變光譜範圍卻大約只有0. 1 nm,因此即使習知的 FP干涉儀有相當良好的光譜解析特性,然而利用傳統的加 工技術及組裝是無法製造出具備寬廣調變光譜特性的FP干 涉儀。同時,傳統的FP干涉儀使用上相當的不便,主要是 因為二鏡面的平行度調整困難,且製造困難度高,使得其When designing an FP cavity, it is usually required that the tunable spectral range FSR is large and the resolution of the output wavelength is high. However, it can be found from formulas (1) and (2) that the two cannot be taken into account simultaneously. Equation (1) illustrates the inverse relationship between FSR and d, while the resolution π of equation (2) is directly proportional to d. In other words, if a wide tunable spectral range is required, the obtained individual wavelength resolution will be poor. So there must be a compromise between the two. To give an example: where λ0 = 1.5mm, nfd = 10mm, R = 90%, then 91 will be as high as 300,000 or more (eight λ 〇 will be less than 0. 0 0 5nm), which represents a very good spectral resolution ability. However, its tunable spectral range is only about 0.1 nm. Therefore, even though the conventional FP interferometer has fairly good spectral analysis characteristics, it cannot be manufactured with wide modulation spectral characteristics using traditional processing techniques and assembly. FP interferometer. At the same time, the traditional FP interferometer is quite inconvenient to use, mainly because the parallelism of the two mirrors is difficult to adjust and the manufacturing difficulty is high, making it
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成本南且使用不易。 u巾儆加丄议w 的各種FP調頻濾波器及其應用發 為了解決上述問題。 (Micromachining)所製作 展迅速。 微型FP調頻濾波器的優點在於利 組裝方式以得到微小FP共振腔d( Α ^ 。程‘作或 公式⑴發現,此舉使得可以調(變的W ,由 相同於上述之例子’僅將nfd由1〇m曰:°二’二 範圍將增大為1〇〇〇nm,這樣的結果等效於利用H以调雙 (Grating)分光的光譜儀功能,這是傳統吓干涉儀所無法 達到的,也疋微型F P調頻濾波器的最大的特色。 … 微型F P調頻渡波器之文獻剖;^It costs less and is not easy to use. Various FP frequency modulation filters and their applications have been proposed in order to solve the above problems. (Micromachining) produced rapid development. The advantage of the miniature FP FM filter is that it is easy to assemble to obtain a tiny FP cavity d (Α ^. Cheng's operation or formula ⑴ found that this makes it possible to tune (variable W, by the same example as above) only the nfd The range from 10m to 2 ° will be increased to 1000nm. This result is equivalent to the spectrometer function using H for Grating spectroscopy, which cannot be achieved by the traditional interferometer. , Also the biggest feature of the miniature FP FM filter.… A profile of the miniature FP FM wave filter; ^
Jerman等人係利用矽晶片黏合技術製作微型吓調頻濾 波器’因共振腔長度相當長(〜2 〇 u m ),可以達到較佳的 识,FSR卻較小(〜50nm)。同時,兩片黏合晶圓的表面不平 坦度會影響其黏合的良率及鏡面之間的平行度,且長間距 (〜20um)提南其靜電驅動電壓。黏合的基材效應(石夕晶圓) 也限制了使用的波長範圍(例如:無法使用於可見光)。 (附件l)Jerman,J.H.et al·,A miniature FP interferometer fabricated using silicon m i cr omach i n i ng techniques,Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE ,Jerman et al. Used silicon wafer bonding technology to make miniature FM filters' because the cavity length is quite long (~ 20 μm), which can achieve better recognition, but the FSR is smaller (~ 50nm). At the same time, the unevenness of the surface of the two bonded wafers will affect the bonding yield and the parallelism between the mirrors, and the long distance (~ 20um) raises its electrostatic drive voltage. The bonded substrate effect (Shi Xi wafer) also limits the wavelength range that can be used (for example, it cannot be used for visible light). (Annex l) Jerman, J.H. et al., A miniature FP interferometer fabricated using silicon m i cr omach i n i ng techniques, Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE,
第6頁 550235 五、發明說明(4) 1 988, Page(s): 16 -18Page 6 550235 V. Description of the Invention (4) 1 988, Page (s): 16 -18
Peerl ings等人也是利用晶片黏合技術製作微型Fp調 頻濾波器,惟其所使用晶片為GaAs砷化鎵材料及利用磊晶 技術製作GaAs/A 1 As鏡面,因為鏡面材料的折射係數差異 小,故需要相當多的對數以達到高反射率的要求以利增加 91 ,導致製程相當複雜且有相同於前述利用矽晶片黏合者 所遭遇的缺點。 (附件2)Peerlings,J.et al.,GaAs/AlAs micromachined tunable FP filters for dense wavelength division multiplex systems, 11th International Conference on Optical Communications,Volume: 3 , 1 997,Page(s): 1-5 , ·Peerlings et al. Also used chip bonding technology to make miniature Fp FM filters, but the wafers they used were GaAs gallium arsenide material and the epitaxial technology was used to make GaAs / A 1 As mirrors. Because the refractive index of the mirror materials is small, it requires Quite a large number of logarithms to achieve the high reflectance requirement to increase the 91, resulting in a relatively complicated process and the same disadvantages as those encountered with the aforementioned silicon wafer bonding. (Annex 2) Peerlings, J. et al., GaAs / AlAs micromachined tunable FP filters for dense wavelength division multiplex systems, 11th International Conference on Optical Communications, Volume: 3, 1 997, Page (s): 1-5, · ·
Vai 1等人也是基於GaAs砷化鎵材料製作微型FP調頻濾 波器’以GaAs蠢晶層作為犧牲層,採用類似於前述的 GaAs/AlAs鏡面材料’故有著相同於前述peeriings者的缺 點。再者,因為GaAs磊晶層作為犧牲層的限制,懸浮鏡面 的面積無法有效加大,光的耗損大,而犧牲層去除所導致 的下切(Undercutting)亦無法嚴格控制元件的橫向尺寸。 同時,其光學共振腔亦受限磊晶的厚度(〜1· 5um),雖然 FSR可增大,沉卻降低,不易在二者間取一平衡點。 (附件3)Vail,E.C.et al.,GaAs micromachined widely tunable FP filters,Electronics Letters ,Volume:31, Issue:3,2 Feb.1995,Page(s):228 -229Vai 1 et al. Also made miniature FP FM filters based on GaAs gallium arsenide material, which uses a GaAs stupid layer as a sacrificial layer and uses a similar GaAs / AlAs mirror material, so it has the same shortcomings as the aforementioned peerings. In addition, due to the limitation of the GaAs epitaxial layer as a sacrificial layer, the area of the floating mirror cannot be effectively increased, and the loss of light is large. The undercutting caused by the sacrificial layer removal can not strictly control the lateral size of the device. At the same time, the thickness of its epitaxial cavity is also limited (~ 1.5um). Although the FSR can be increased, the sinking is reduced, and it is not easy to strike a balance between the two. (Annex 3) Vail, E.C.et al., GaAs micromachined widely tunable FP filters, Electronics Letters, Volume: 31, Issue: 3,2 Feb.1995, Page (s): 228 -229
Spisser等人則是利用InP作為基材,InP/空氣作為鏡Spisser et al. Used InP as the substrate and InP / air as the mirror
第7頁 550235 五、發明說明(5) 面材料’其優點為二者折射係數差異相當大,故僅需極少 對數即可以達到相當高的反射率,然其他部分亦相同於前 述Vai 1者的缺點。 (附件4)A· Spisser et al·,Highly Selective and Widely Tunable 1.55-um InP/ Air-Gap Micromachined FP Filter for Optical Communications,IEEE Photonics Tech. Let., Vol 10, No. 9, 1 9 9 8, Page (s): 1259-1261 最後一種則是利用矽面型微加工技術製作者,包括 Tran等人及Tayebati等人,由於矽半導體製程的成熟性, 使得此一方法製造相當容易且成本低。然而此二者皆利用 光阻(Polyimide)作為犧牲層,其厚度變異量相當大,因 此很難做生產品質控管。 (附件5) Α·Τ· T· D· Tran,et al.,Surf ace Micromachined FP Tunable Filter,IEEE Photonics Tech. Let., Vol 8, No. 3, 1 996, Page (s): 393-395 (附件6) P. Tayebati,et al.,Microelectromechanical tunable filter with stable half symmetric cavity, Electronics Letters, vol. 34, No.20, 1998, pages 1 967- 1 968· 綜觀上述文獻’絕大部份皆利用高溫製程( > 丨〇 〇 〇 t) 以完成元件之設計及製造,對於無法耐溫的光學基板(如 玻璃)不能適用,而不能應用於不同光譜(如可見光)。抑 或如Tran專人及Tayebati等人利用較低之製程溫度(〜4〇〇Page 7 550235 V. Description of the invention (5) The surface material 'has the advantage that the refractive index difference between the two is quite large, so only a few logarithms can be used to achieve a relatively high reflectance, but the other parts are the same as those of the aforementioned Vai 1. Disadvantages. (Annex 4) A. Spisser et al., Highly Selective and Widely Tunable 1.55-um InP / Air-Gap Micromachined FP Filter for Optical Communications, IEEE Photonics Tech. Let., Vol 10, No. 9, 1 9 9 8, Page (s): 1259-1261 The last one is the use of silicon-based microfabrication technology producers, including Tran et al. And Taiebati et al., Due to the maturity of the silicon semiconductor process, this method is relatively easy to manufacture and low cost. However, both of them use photoresist (Polyimide) as the sacrificial layer, and the thickness variation is quite large, so it is difficult to do production quality control. (Annex 5) Α · Τ · T · D · Tran, et al., Surf ace Micromachined FP Tunable Filter, IEEE Photonics Tech. Let., Vol 8, No. 3, 1 996, Page (s): 393-395 (Annex 6) P. Tayebati, et al., Microelectromechanical tunable filter with stable half symmetric cavity, Electronics Letters, vol. 34, No. 20, 1998, pages 1 967- 1 968 The use of high-temperature processes (> 丨 〇〇〇t) to complete the design and manufacturing of components, can not be used for optical substrates (such as glass) can not withstand temperature, not for different spectrum (such as visible light). Or someone like Tran and Tayebati, etc. use a lower process temperature (~ 400).
第8頁 550235 五、發明說明(6) °C ),卻無法兼顧製程的控管。 【發明概要】 因此,本發明之目的,係提供一種低溫製造的微型FP 調頻濾波器,並且滿足製造控管容易。 根據本發明之一實施樣態,係關於一種微型調頻濾波 元件的基本結構,包含: 一基板,具備第一面及第二面; 一金屬孔徑空間濾波器,形成於該基板的該第一面 上; 一第一鏡面,形成於該基板的該第一面及該金屬孔徑 空間濾波器上; 一抗反射膜,形成於該基板的該第二面; 一第一電極,該第一電極為前述之該金屬孔徑空間濾 波器; 一金屬懸浮機械結構,包含了一薄板結構、細長支腳 以及支撐固定區域,該薄板結構中央形成一大孔徑開口於 該空間濾波孔徑上方,該薄板結構其他區域形成複數之小 防沾黏開口; 一第二電極,該第二電極為前述之該金屬懸浮結構; 一第二鏡面,形成於該薄板結構中央的該孔徑開口 上; 一空氣間隙,形成於該薄板結構與該第一鏡面間。Page 8 550235 V. Description of the invention (6) ° C), but cannot take into account process control. [Summary of the Invention] Therefore, the object of the present invention is to provide a miniature FP FM filter manufactured at a low temperature, and to satisfy the ease of manufacturing control. According to an aspect of the present invention, the basic structure of a miniature FM filter element includes: a substrate having a first surface and a second surface; and a metal aperture spatial filter formed on the first surface of the substrate. A first mirror surface formed on the first surface of the substrate and the metal aperture spatial filter; an anti-reflection film formed on the second surface of the substrate; a first electrode, the first electrode being The aforementioned metal aperture spatial filter; a metal suspension mechanical structure including a thin plate structure, slender legs, and a support and fixed area, a large aperture formed in the center of the thin plate structure above the spatial filtering aperture, and other areas of the thin plate structure Forming a plurality of small anti-sticking openings; a second electrode, the second electrode is the aforementioned metal suspension structure; a second mirror surface is formed on the aperture opening in the center of the sheet structure; an air gap is formed on the Between the thin plate structure and the first mirror surface.
第9頁 550235Page 9 550235
五、發明說明(7) 其中’位於該第一鏡面及該第二鏡面間之該 係作為一光學共振腔。藉由第一及第二電極之靜力陳 制,可以改變光學共振腔長度而達到濾波輪出之^ 關於本發明之目的、特性及優點,在夂去此 %爹号下列内容及 附圖說明之後,將可更清楚明暸。 【實施例之說明】 請參見圖2 ’其係為本發明微型FP調頻濾波哭 結構剖視圖。以下將以文字詳細說明圖2所示姓姓从# 4 _ ’ "、、、、。稱的设计 及製造。 (1) 首先,在一雙面拋光矽基板10的一面製作—金屬 薄膜102,該金屬薄膜102中央所開孔徑102a係^乍為一'空間 濾波用途(Aperture Spatial Light Filter ),限制了入 射光點的大小。該金屬薄膜材料可以為T i、a g、a 1及A u, 其厚度大於0· lum。同時該金屬薄膜1 02也兼作一第一電極 (其功能稍後再述)。 (2) 製作一第一鏡面101 ,第一鏡面1〇1材料為多層介 電材料所製作而成的高反射、低損耗鏡面。多層介電材料 基本組成單位為一對折射係數高與折射係數低的介電材 ,,其材料可以為 Si/Si02、Ti02/Si02 及 MgF2/Ti02 等 等’製作方式則是利用物理蒸汽沈積法(Physical Vapour5. Description of the invention (7) wherein the system between 'the first mirror surface and the second mirror surface serves as an optical resonance cavity. Through the static aging of the first and second electrodes, the length of the optical resonant cavity can be changed to achieve the filter wheel. ^ About the purpose, characteristics and advantages of the present invention, the following content and description of the% D After that, it will become clearer. [Explanation of the embodiment] Please refer to FIG. 2 ′, which is a cross-sectional view of a miniature FP FM filter structure of the present invention. The following will explain in detail in text the surnames from # 4 _ ′ " ,,,,, and so on. Design and manufacturing. (1) First, one side of a double-sided polished silicon substrate 10 is fabricated—a metal thin film 102. The opening 102a at the center of the metal thin film 102 is used as a spatial filter (Aperture Spatial Light Filter) to limit incident light. The size of the point. The metal thin film material may be T i, a g, a 1 and A u, and its thickness is greater than 0 · lum. At the same time, the metal thin film 102 also serves as a first electrode (its function will be described later). (2) Fabricate a first mirror 101. The first mirror 101 is made of a multi-layer dielectric material with a high reflection and low loss mirror. The basic unit of multilayer dielectric materials is a pair of dielectric materials with high and low refractive index. The materials can be Si / Si02, Ti02 / Si02, MgF2 / Ti02, etc. The production method is by physical vapor deposition (Physical Vapour
Deposit i〇n),製作溫度約為20 0 °C。並且在該基板10的另 面製作一抗反射膜500(Anti-Reflective Coating),作Deposit i〇n), the production temperature is about 20 ° C. An anti-reflective coating (500) is formed on the other surface of the substrate (10).
第10頁 550235 五、發明說明(8) ' 為光的入射面,以降低入射光的耗損。 (3) :懸浮機械結構2 0 0包含了」薄板結構2〇1、細長 支腳20 3以及支撐固定區域204。該薄板結構2〇1與該第一 鏡面101間距離一空氣間隙3 0 0,該薄板結構2〇1中央形 二較大開口孔徑2 〇 1 a於前述該空間濾波孔徑丨〇 2 a上方,今 薄板結構201的其他區域則形成複數之防沾黏開口2〇lb 該懸浮機械結構2〇〇組成材料為1^/八11,製作方式則3 利用物理蒸汽沈積法(Physical Vapour Deposition)。= 擇T 1 /Au作為懸浮結構材料的最主要因素為可以利用退火、 方式(Anneal 1 ing)控制其應力,達到光學平坦度之要求, 而f其退火溫度小於2 50。〇。同時該Ti/Au懸浮結構也兼作 一第二電極,與前述之該第一電極間可以透過靜電力 制達到改變二者間該空氣間隙3〇〇的距離。 、控 該空氣間隙30 0間隙的形成包含了一犧牲層材料的 作定義及後續的蝕刻去除。在本實施例中該犧牲層材^ 鋁及鋁合金,為一相當普遍及製程容易控管的材料,卫為 造時的厚度監控亦可以達到非常精準,鋁金屬犧牲層製 方法係利用碟酸、硝酸及醋酸之混合酸,在溫度6 〇〜9 〇。除 環境下進行。在犧牲層的蝕刻時,透過前述防沾黏開口0 2 0 1 b的設計’除了可以縮短蝕刻完成所需之時間外, 以防止該懸浮結構2〇〇與該第一鏡面1〇ι間發生沾黏文可 (Sticking)。 (4) 製作一第二鏡面4〇〇於前述該薄板結構2〇ι中本 口孔徑201a上’其材料及製作方式相同於前述該第〜 现面Page 10 550235 V. Description of the invention (8) 'is the incident surface of light to reduce the loss of incident light. (3): The suspension mechanical structure 2000 includes a "thin plate structure 201", an elongated leg 203, and a support fixing area 204. The distance between the thin plate structure 201 and the first mirror surface 101 is an air gap 300. The thin plate structure 201 has a central shape and two large opening apertures 2 0a above the aforementioned spatial filtering aperture 1 2a. Now, the other areas of the thin plate structure 201 form a plurality of anti-sticking openings 20 lb. The suspension mechanical structure 2000 is composed of 1 ^ / eight 11 and the production method 3 uses physical vapor deposition (Physical Vapour Deposition). = The most important factor in choosing T 1 / Au as the material of the suspension structure is that the stress can be controlled by annealing and annealing (Anneal 1 ing) to meet the requirements of optical flatness, and the annealing temperature of f is less than 2 50. 〇. At the same time, the Ti / Au suspension structure also doubles as a second electrode, and the aforementioned first electrode can be passed through an electrostatic force to change the air gap distance between the two by 300. The formation of the air gap 300 gap includes the definition of a sacrificial layer material and subsequent etching removal. In this embodiment, the sacrificial layer ^ aluminum and aluminum alloy are quite common and the process can be easily controlled. The thickness monitoring during Weiwei's manufacture can also be very accurate. The method for the sacrificial layer of aluminum metal uses dish acid. Mixed acid of nitric acid and acetic acid at a temperature of 60 ~ 90. Except under environment. During the etching of the sacrificial layer, through the aforementioned design of the anti-adhesion opening 0 2 0 1 b, in addition to shortening the time required for the completion of the etching, to prevent the floating structure 200 and the first mirror surface 100 from occurring. Sticking text (Sticking). (4) A second mirror surface 400 is formed on the aperture 201a of the thin plate structure 200m. The material and manufacturing method are the same as those of the first to the present surface.
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