544393 五、發明說明（1) 發明領域 本發明係關於一種石英材質護板及其製法，特別是 種表面彼覆陶瓷的石英材質護板及其製法。 發明背景 洗、 都會 被護 的剖 到護 生所 的良 半導 達到 板的 因此 良率 石英 半導 蒸鍍 有一 板所 面不 板上 謂的 率無 體業 一定 體元件 、濺鍍 些半導 吸附。 意圖。 的吸附 粒子（ 法提南 者希望 的良率 吸附能力差 ，會對半導 降低。 石英材質的 的製作過程 、氣相沉積 體原料喷射 請參閱圖一 當這些原料 力無法負荷 particles: 的最大原因 將粒子的數 。因此護板 ，則喷濺到 體元件產生 需要相當多的步驟，例如清 等。在這些製程中，或多或少 到半導體製程設備的護板，而 ，圖一為習知石英材質護板1 0 在護板表面1 2上逐漸堆積，直 Jv 時，這些原料就會崩解，而產 | 。這些粒子便是半導體元件 ，即業界俗稱的污染源。通常 目控制在一定的指數以下，以 的吸附能力非常重要，如果護 護板上的粒子會容易掉下來， 污染，進而使得半導體元件的 護板廣泛地應用於半導體製程設備，因為 項特性： 具有以下幾 1、 絕緣性（I nsu 1 at i on):常溫下幾乎不導電； 2、 财酸（驗）性（Ac i d-r es i s t i ng):對氫氟酸（HF ) 具相當持久性； 3、 透明度（Transparency):石英氧化後具有理想544393 V. Description of the invention (1) Field of the invention The present invention relates to a protective plate made of quartz material and a method for manufacturing the same, and in particular, a protective plate made of quartz material and a method for manufacturing the same. BACKGROUND OF THE INVENTION The good semiconductors that are washed and cut to the health care facility reach the board, so the yield of the quartz semiconductor is vapor-deposited with a plate that is not on the plate. There is no body component, and some semiconductors are sputtered. Adsorption. intention. The adsorption capacity of the adsorbed particles (Fatinan hopes that the yield is poor, which will reduce the semiconductivity. For the manufacturing process of quartz material and the vapor deposition of raw materials, please refer to Figure 1. When these raw materials cannot load particles: the biggest reason Counting the number of particles. Therefore, the protective plate, splashing onto the body components requires considerable steps, such as cleaning, etc. In these processes, more or less to the protective plate of the semiconductor process equipment, and Figure 1 is a conventional Quartz material protective plates 10 are gradually accumulated on the protective plate surface 12. When Jv is straight, these raw materials will disintegrate and produce |. These particles are semiconductor components, which are commonly known as pollution sources in the industry. Usually the objective is controlled to a certain Below the index, the adsorption capacity is very important. If the particles on the protective plate will fall off easily and contaminate, the protective plate of semiconductor elements will be widely used in semiconductor manufacturing equipment because of the following characteristics: 1. Insulation (I nsu 1 at i on): almost non-conductive at room temperature; 2. Ac i dr es isti ng: equivalent to hydrofluoric acid (HF) Durability; 3, transparency (Transparency): After having over silica oxide
5SIC200201TW.ptd 第4頁 544393 五、發明說明（2) 的透明度； 4、熱膨脹（Thermal Expansion):石英的熱膨脹係 數幾近於0，故兩點間之尺寸不會移動。 請參閱圖二及圖三，圖二為圖一石英材質護板1 0經喷 砂後表面結構的示意圖，圖三為圖二沿中心線CL量測而得 之粗度分佈曲線示意圖。習知石英材質護板的表面處理過 程僅經過清洗以及喷砂處理，習知喷砂處理所用的三氧化 二鋁的砂號為2 0#到3 0# ，喷砂處理時所用的壓力約為3 到5kg/cm 2。然而經此喷砂處理所賦予石英表面之粗度卻 不足以吸附部分的半導體原料，如二氧化矽（S i 0 Ο等。 如圖二所示習知經喷砂處理的石英材質護板1 0其表面結構 過於尖銳，而且粗度分佈較不平均。如圖三所示，其中心 線平均粗度（Ra)約為1 0到20微米（// m)之間。由於粗 度過大，因此半導體的污染源不易於其上形成牢固的膜， 污染源便容易掉落而形成粒子。因此應用習知表面處理製 程的石英材質護板，因其吸附半導體原料的能力不足，使 得半導體的良率一直無法提昇。 發明概述 本發明之主要目的，在於提供一種表面彼覆一層陶瓷 層之石英材質護板，能有效減低粒子的數量，進而增加半 導體元件的製造良率。 本發明之另一目的，在於提供一種改良的石英材質護 板，可以有效增加石英護板的使用時數，，並且石英材質5SIC200201TW.ptd Page 4 544393 V. Transparency of the invention (2); 4. Thermal Expansion: The thermal expansion coefficient of quartz is almost zero, so the size between two points will not move. Please refer to Fig. 2 and Fig. 3. Fig. 2 is a schematic diagram of the surface structure of the quartz material protective plate 10 after sandblasting in Fig. 1. Fig. 3 is a schematic diagram of the roughness distribution curve measured along the center line CL in Fig. 2. The surface treatment process of the conventional quartz protective plate is only cleaned and sandblasted. The sand number of aluminum oxide used in the sandblasting process is 2 0 # to 3 0 #. The pressure used in the sandblasting process is about 3 to 5 kg / cm 2. However, the roughness given to the quartz surface by this sandblasting treatment is not enough to adsorb part of the semiconductor raw materials, such as silicon dioxide (S i 0 Ο etc.). As shown in Figure 2, the conventional sandblasted quartz material protective plate 1 Its surface structure is too sharp, and its roughness distribution is not even. As shown in Figure 3, the average roughness (Ra) of its centerline is between about 10 and 20 microns (// m). Because the roughness is too large, Therefore, it is not easy for a semiconductor pollution source to form a solid film thereon, and the pollution source is easy to fall to form particles. Therefore, the quartz surface shield applied in the conventional surface treatment process has a poor semiconductor adsorption capacity, so the yield of the semiconductor has been consistent. Cannot be improved. SUMMARY OF THE INVENTION The main object of the present invention is to provide a quartz material protective plate with a ceramic layer on the surface, which can effectively reduce the number of particles and thereby increase the manufacturing yield of semiconductor elements. Another object of the present invention is to Provide an improved quartz material shield, which can effectively increase the use time of the quartz shield, and the quartz material
5SIC200201TW.ptd 第5頁 544393 五、發明說明（3) 護板的本體可 本發明係 材質護板表面 半導體製程設 產生。製造本 處理，用以清 附予石英材質 將一陶瓷材料 用以清洗表面 處理，用以乾 本發明提 對於污染源有 提昇了半導體 質護板，使得 利用本發明方 並可減少化學 關於本發 所附圖式得到 以再生使用。 一種製造石英 子的能 所吸附 英材質 吸附粒 備，其 發明石 淨石英 護板的 塗佈至 經過塗 燥石英 供表面 較佳的 的製造 石英材 法再生 藥劑的 明之優 進一步 材質護 表面一 石英材 佈處理 材質護 具有一 吸附能 良率。 質護板 使用， 使用， 點與精 的瞭解 材質護 力。該 的粒子 護板的 板的表 塗佈粗 質護板 的石英 板。 層陶瓷 力，使 此外， 不易損 增力α其 進而避 神可以 板的方法， 石英材質護 係由半導體 方法包含： 面；一噴砂 度；一塗佈 的表面；一 以增進石英 板係應用於 製程設備所 一表面清淨 處理，用以 處理，用以 清洗處理， 材質護板；以及一乾燥 材料的石央 得粒子數目 陶瓷層還可 毁，石英材 使用時數。 免對環境破 藉由以下的 材質護板， 降低，進而 保護石英材 質護板並可 本發明方法 壞。 發明詳述及 發明之詳細說明 請參閱圖四，圖四為經過本發明表面處理方法之石英 材質護板2 0及其陶瓷層2 4的示意圖。石英材質護板2 0係應 用於一半導體製程設備，粒子係由半導體製程設備所產 生。石英材質護板2 0具有一表面2 2，本發明係將一陶瓷材5SIC200201TW.ptd Page 5 544393 V. Description of the invention (3) The body of the protective plate can be produced by the semiconductor material on the surface of the protective plate. This treatment is made to clear the quartz material and a ceramic material is used to clean the surface treatment to dry the invention. The semiconductor substrate is improved for the pollution source, so that the inventor can be used and the chemistry can be reduced. The drawings are obtained for regeneration. The invention discloses a device for manufacturing quartz particles, which can be adsorbed by British materials. The invention discloses the application of the stone net quartz protective plate to the surface of the quartz which is coated with dried quartz for better surface treatment. The material protection has a good yield of adsorption energy. Quality protection board Use, use, point and precise understanding of material protection. The surface of the particle guard plate is a quartz plate coated with a rough guard plate. Layer ceramic force, in addition, it is not easy to damage and increase the strength α which further avoids the magic plate method, the quartz material protection system by the semiconductor method includes: surface; a sandblasting degree; a coated surface; A surface of the process equipment is cleaned for processing, used for cleaning, material protection; and a dry material, the number of particles in the ceramic layer can be destroyed, and the quartz material can be used for hours. Free from environmental damage With the following material shields, it can be lowered to protect the quartz shields, which can damage the method of the present invention. Detailed description of the invention and detailed description of the invention Please refer to FIG. 4, which is a schematic diagram of the quartz material protective plate 20 and the ceramic layer 24 after the surface treatment method of the present invention. The quartz guard 20 is used in a semiconductor process equipment, and the particles are produced by the semiconductor process equipment. The quartz material protective plate 20 has a surface 22, and the present invention is a ceramic material.
5SIC200201TW.ptd 第6頁 544393 五、發明說明 料塗佈於 以增進石 關於 進行一受 以及是否 在受 面2 2之異 三氧化二 間。此法 方式不但 在除 表面2 2。 利用以純 之後進行 潰。 在表 砂法附予 除膜處理 利用喷砂 (Al2〇3) 塗佈膜除 化二鋁， 作塗佈粗 到5微米' (4) 石英材質護 英材質護板 本發明之石 入處理，即 有破損。 入處理之後 物及薄膜以 鋁（A 1 20 3) 有別於習知 會腐餘石英 膜處理之後 表面清淨處 水加溫震動 空壓吹拂， 面清淨處理 表面2 2—塗 之喷砂法稍 機除膜，使 ，僅把表面 去。而喷砂 主要是為了 度至範圍為 ^ β m)，认匕 接著進行一 喷砂機去除 ，而砂的尺 使用硝酸之 本體，廢棄 接著進行一 理可先將表 、或是以丙 以強力的空 板2 0之表面2 2上而形成一陶瓷層2 4， 2 0吸附粒子的能力。 英材質護板2 0的表面處理方法，首先 先檢查石英材質護板2 0的外觀、尺寸 除膜處理，即將附著於表 。喷砂機所用之砂類可用 寸範圍則在6 0 #至1 2 0 #之 浸泡方式除膜，習知浸泡 之酸液處理亦有害學境。 表面清淨處理，用以清淨 面2 2之水、脂去除，例如 酮、異丙酮去除水、脂。 氣去除並乾燥石英表面水 之後接著進行一喷砂處理，即利用喷 佈粗度。此處所利用之喷砂法和前述 有不同，除膜處理時之喷砂，主要是 用之砂類為6 0 #到1 2 0 #之三氧化二鋁 2 2附著膜及或是經由本發明處理過之 處理之喷砂，使用砂類為3 0 #之三氧 在進行後續步驟之前，先於表面2 2製 中心線平均粗度（Ra) 3微米（// m) 處理有利於陶瓷材料貼附於表面2 2之5SIC200201TW.ptd Page 6 544393 V. Description of the invention The material is coated on the stone to promote the acceptance and whether it is in the receiving surface 2 2 and the difference between trioxide. This method not only removes the surface 2 2. Utilization was performed after the mash. The surface sand method is supplemented with a film-removing treatment by using a sandblasting (Al203) coating film to remove aluminum oxide, and the coating thickness is 5 micrometers. (4) Quartz material and British material protection plate That is broken. After the treatment, the material and film are aluminum (A 1 20 3). It is different from the conventional quartz crystal film after the surface is cleaned. The water is heated and shaken by air pressure. The surface is cleaned. Remove the membrane so that only the surface is removed. The sand blasting is mainly for the degree to the range of ^ β m), and then the dagger is removed by a sand blasting machine. The sand ruler uses the body of nitric acid, and then discarded. The surface 22 of the empty plate 20 forms a ceramic layer 2 4 and the ability to adsorb particles. For the surface treatment method of the British material protective plate 20, first check the appearance and size of the quartz material protective plate 20. Remove the film, and it is about to be attached to the table. The available sand for the blasting machine is in the range of 60 # to 1 2 0 #. The method of soaking is to remove the film. The treatment of the soaked acid solution is also harmful to the academic environment. Surface cleaning treatment is used to remove water and grease from the surface 22, such as ketone and isoacetone to remove water and grease. The gas is removed from the quartz surface and the water on the quartz surface is dried, followed by a sandblasting process, using the coarseness of the spray. The sand blasting method used here is different from the foregoing. The sand blasting when removing the film is mainly used for the type of aluminum oxide 2 6 # 2 to 1 2 0 # attached film and or through the present invention The treated sand blasting uses a sand type of 3 0 #three oxygen. Before proceeding to the next step, the average thickness of the center line of the surface 2 2 (Ra) 3 microns (/ / m) treatment is beneficial to ceramic materials Attach to the surface 2 of 2
5SIC200201TW.ptd 第7頁 544393 五、發明說明 在清 英材質護 質護板保 在乾 裝以保持 請參 綜合以上 1 〇之表面 步驟： 步驟 步驟 步驟 及薄膜以 步驟 步驟 一塗佈粗 步驟 佈至表面 步驟 去除以及 步驟 石英材質 步驟 20〇 (6) 洗處理之後接著進行一乾燥處理，用以乾燥該石 板。乾燥處理可控制在3 0到9 0分鐘内，將石英材 持在1 0 5°C之下加以乾燥。 燥處理之後接著進行一包裝處理，可利用真空包 石英材質護板之品質。 閱圖五，圖五係本發明表面處理方法之流程圖。 所述，本發明將一陶瓷材料塗佈於石英材質護板 2 2上而形成一陶瓷層2 4的表面處理方法包含以下 S30:開始。 S32:進行受入處理。 S 3 4 :進行除膜處理，即將附著於表面2 2之異物 喷砂機去除。 S 3 6 :進行表面清淨處理，用以清淨表面2 2。 S 3 8 :進行喷砂處理，即利用喷砂法附予表面2 2 度。 S 4 0 :進行塗佈處理，係以熔射搶將陶瓷材料塗 22 〇 S 4 2 :進行熔射後處理，用以將毛邊及附著異物 測量熔射後的表面粗度並加以調整。 S 4 4 :進行清洗處理，用以清洗經過塗佈處理的 護板2 0。 S4 6 ··進行乾燥處理，用以乾燥該石英材質護板 »5SIC200201TW.ptd Page 7 544393 V. INTRODUCTION OF THE INVENTION Keep the dry surface of Qingying material in a dry package to keep the surface of the above 1 0. Steps: Steps and films: Step 1 The step of removing the surface and the step of washing the quartz material in step 20 (6) is followed by a drying treatment to dry the slate. The drying process can be controlled within 30 to 90 minutes, and the quartz material is dried at 105 ° C. After the drying process, a packaging process is performed, and the quality of the quartz material protective plate can be used. See Figure 5. Figure 5 is a flowchart of the surface treatment method of the present invention. According to the present invention, the surface treatment method of applying a ceramic material on the quartz material protective plate 22 to form a ceramic layer 24 includes the following S30: Start. S32: Perform acceptance processing. S 3 4: Remove the film, that is, remove the foreign matter attached to the surface 2 2 by sandblasting. S 3 6: Surface cleaning treatment is performed to clean the surface 2 2. S 3 8: Sandblasting is performed, that is, sandblasting is used to attach the surface to 2 2 degrees. S 4 0: Perform coating treatment, coating ceramic material by spraying. 22 S 4 2: Perform post-processing of spraying to measure burr and foreign matter adhesion. Measure and adjust surface roughness after spraying. S 4 4: A cleaning process is performed to clean the coated panel 20. S4 6 ·· Dry treatment to dry the quartz shield »
5SIC200201TW.ptd 第9頁 544393 五、發明說明 步驟 材質護板 步驟 請參 2 0的表面 意圖’圖 圖。如圖 面2 2塗佈 的表面結 為一層狀 八所 間。 緩和 其上 粒子 材質 護板 材質 設備 石英 藥劑 的石 示， 由於 的表 形成 的數 此外 護板 本體 護板 的生 材質 來清 相較 英材 (7) S48 :進行包裝處理，利用真空包裝以保持石英 2 0之品質。 S 5 0 :結束。 閱圖六、圖七及圖八，圖六為圖四石英材質護板 粗度分佈示意圖，圖七為圖六表面結構的簡易示 八為圖六沿中心線J J量測而得之粗度分佈曲線 六所示，石英材質護板2 0經過熔射處理後，其表 上一層陶瓷層2 4，使得石英材質護板2 0具有平滑 構且均勻的粗度分佈。如圖七所示，陶瓷層2 4係 堆疊的結構，因此具有較平緩的粗度分佈。如圖 陶瓷層2 4之中心線平均粗度的範圍約在4到7微米 本發明石英材質護板2 0所披附的陶瓷層2 4具有較 面粗度，對於矽有較佳的吸附能力，污染源易於 牢固的膜，污染源便不容易掉落，可以有效減低 量，進而增加半導體製程的良率。 ，陶瓷層2 4還可保護石英材質護板2 0，使得石英 不易損毁。而即使陶瓷層2 4磨損之後，石英材質 便可藉由以上步驟再生製造一具有陶瓷層之石英 ，因此可以增加護板使用時數，進而減低半導體 產成本。此外，本發明製造或再生具陶瓷層2 4之 護板時，使用物理性之喷砂技術，不必利用化學 洗，可以避免對環境破壞。 於習知技術，本發明提供表面具有一層陶瓷材料 質護板，對於污染源有較佳的吸附能力，使得粒5SIC200201TW.ptd Page 9 544393 V. Description of the invention Step Material protection plate Step Please refer to the surface intention of 2 0. As shown in Figure 22, the coated surface is layered. Alleviate the quartz display of the particle material and the material of the protective plate on the quartz material. Due to the number of the table, the raw material of the protective plate and the raw material of the protective plate are compared with the British material (7) S48: Packing treatment, vacuum packaging to keep The quality of quartz 20. S 5 0: End. See Figure 6, Figure 7 and Figure 8. Figure 6 is a schematic diagram of the coarseness distribution of the quartz shield in Figure 4. Figure 7 is a simplified illustration of the surface structure in Figure 6. Figure 8 is the coarseness distribution measured along the centerline of JJ in Figure 6. As shown in the curve 6, after the quartz material protective plate 20 is subjected to the spraying treatment, a ceramic layer 24 is placed on the surface, so that the quartz material protective plate 20 has a smooth structure and a uniform roughness distribution. As shown in FIG. 7, the ceramic layer 2 4 is a stacked structure, so it has a smoother roughness distribution. As shown in the figure, the average thickness of the center line of the ceramic layer 24 is about 4 to 7 micrometers. The ceramic layer 24 covered by the quartz material protective plate 20 of the present invention has a relatively thick surface and has a good adsorption capacity for silicon. The pollution source is easy to be a firm film, and the pollution source is not easy to fall, which can effectively reduce the amount, thereby increasing the yield of the semiconductor process. The ceramic layer 24 can also protect the quartz protective plate 20, making the quartz difficult to damage. And even after the ceramic layer 24 is worn, the quartz material can be remanufactured to produce a quartz with a ceramic layer through the above steps. Therefore, the use time of the guard plate can be increased, thereby reducing the cost of semiconductor production. In addition, when the protective plate with the ceramic layer 24 is manufactured or regenerated according to the present invention, a physical sand blasting technique is used, and chemical washing is not necessary to avoid environmental damage. Based on the conventional technology, the present invention provides a layer of ceramic material on the surface, which has a better adsorption capacity for pollution sources, making the particles
5SIC200201TW.ptd 第10頁 544393 五、發明說明（8) 子數目降低， 層還可保護石 石英材質護板 使用時數。本 免對環境破壞 藉由以上 描述本發明之 體實施例來對 希望能涵蓋各 之專利範圍的 範®壽應該根據 所有可能的改 進而提昇了半導體的製造良率。此外，陶瓷 英材質護板，使得石英材質護板不易損毀， 本身並可利用本發明方法再生使用，增加其 發明方法並可減少化學藥劑的使用，進而避 〇 較佳具體實施例之詳述，係希望能更加清楚 特徵與精神，而並非以上述所揭露的較佳具 本發明之範疇加以限制。相反地，其目的是 種改變及具相等性的安排於本發明所欲申請 範疇内。因此，本發明所申請之專利轉圍的 上述的說明作最寬廣的解釋，以致使其涵蓋 變以及具相等性的安排。5SIC200201TW.ptd Page 10 544393 V. Description of the invention (8) The number of sub-pieces is reduced, and the layer can also protect the stone quartz plate. Hours of use. The present invention does not damage the environment. By describing the embodiments of the present invention above, it is desirable to improve the manufacturing yield of semiconductors based on all possible changes in the range of patents that are expected to cover the various patents. In addition, the protective plate made of ceramic material makes the protective plate made of quartz material difficult to be damaged. It can be recycled by using the method of the present invention, increasing the method of the invention and reducing the use of chemical agents, and thus avoiding the detailed description of the preferred embodiments It is hoped that the characteristics and spirit can be more clearly understood, but not limited by the scope of the present invention as disclosed above. On the contrary, the purpose is to make a change and an equivalent arrangement within the scope of the intended application of the present invention. Therefore, the above description of the patent application for which the present invention is applied is the broadest explanation, so that it covers variations and equivalent arrangements.
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