TW543345B - Lighting device of discharge lamp - Google Patents

Lighting device of discharge lamp Download PDF

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Publication number
TW543345B
TW543345B TW91103437A TW91103437A TW543345B TW 543345 B TW543345 B TW 543345B TW 91103437 A TW91103437 A TW 91103437A TW 91103437 A TW91103437 A TW 91103437A TW 543345 B TW543345 B TW 543345B
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Taiwan
Prior art keywords
discharge lamp
circuit
switching element
lighting device
voltage
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TW91103437A
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Chinese (zh)
Inventor
Osamu Takahashi
Yoshitaka Igarashi
Shinsuke Funayama
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Mitsubishi Electric Corp
Mitsubishi Elec Lighting Corp
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Publication of TW543345B publication Critical patent/TW543345B/en

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Abstract

The object of the present invention is to provide a lighting device of discharge lamp. A Zener diode for by-passing the gate current of a switching device in a pre-heat timer period can adopt the component with a wide varying range, so as to surely keep oscillating even when the surrounding temperature is changed. To solve the problem, the lighting device of discharge lamp is provided with a discharge lamp loading circuit; a choke coil 4 connected to a frequency converter circuit, a discharge lamp 5 and a coupling capacitor 7; and a pre-heat timer circuit. After applying DC power source 1, in a predetermined timer period, the voltage bypass occurred in the sub-windings (ab, cd) of the coil of switching devices 2, 3 driving the frequency converter circuit is operated on the switching devices 2, 3 after a predetermined period of each driving cycle of the oscillating frequency, thereby increasing the oscillating frequency of the switching devices 2, 3.

Description

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五、發明說明(1) 發明所屬技術領域 本發明係有關於利用來自變頻器電路 電燈點燈之放電燈點燈裝置。 问々電力令放 習知技術 圖5表示以往之放電燈點燈裝置之電路圖。 係自商用電源得到之直流電源,2及3係構,故1 由〇通道MOSFET構成之切換元件,4係用以限制放^V. Description of the invention (1) Technical field of the invention The present invention relates to a discharge lamp lighting device using an electric lamp from an inverter circuit. Asking about electric power amplifier conventional technology Fig. 5 shows a circuit diagram of a conventional discharge lamp lighting device. It is a DC power source obtained from a commercial power supply, and 2 and 3 are structured, so 1 is a switching element composed of 0-channel MOSFET, 4 is used to limit the amplifier ^

流之具有2個副繞阻^、cd之抗流線圈,5係放電燈Γ6\ 和放電燈並聯之電容器,7係耦合電容器,丨〇及丨丨係由電 阻及電容器構成之M0SFET2之起動電路,抗流線圈4之2個 之副繞阻ab、cd各自經由電阻8及9在M〇SFET2、3各自之問 極、源極間連接成Μ 0 S F E T 2、3交互〇 N、〇 F F。2 0及2 1係由 電阻及電容器構成之定時器電路,22及27係齊納二極體, 2 3、2 4以及2 9係電阻,2 5及2 6係電晶體,2 8及3 0係二極 體。 此外,在圖6表示在自商用電源得到直流電源之情況 之直流電源1之構造例。如圖6所示,在構造上自商用電源 1 a輪出之交流電源經二極體電橋1 b全波整流後,用平滑電Current has two auxiliary windings, cd, anti-current coil, 5 series discharge lamp Γ6 \ capacitors connected in parallel with the discharge lamp, 7 series coupling capacitors, 丨 〇 and 丨 丨 are M0SFET2 start circuits composed of resistors and capacitors The two secondary windings ab and cd of the current-resistant coil 4 are respectively connected to the MOS SFETs 2 and 3 through the resistors 8 and 9 to form MOS SFETs 2 and 3 to interact with each other. 2 0 and 21 are timer circuits composed of resistors and capacitors, 22 and 27 are Zener diodes, 2 3, 2 4 and 2 9 are resistors, 2 5 and 2 6 are transistors, 2 8 and 3 0 is a diode. In addition, Fig. 6 shows a configuration example of the DC power source 1 when a DC power source is obtained from a commercial power source. As shown in FIG. 6, the AC power output from the commercial power source 1 a is structurally subjected to full-wave rectification by the diode bridge 1 b, and then smoothed power is used.

容器1 c平滑化,作為直流電源向負載電路輸出。 以下說明圖5所示之習知例之放電燈點燈裝置電路之 動作。 首先,送上直流電源1時,利用來自電阻1 〇及電容器 11之起動電流以高頻交互驅動η通道MOSFET,以至於放電 燈5點燈。那時,在放電燈5未放電之情況,因由抗流線圈The container 1 c is smoothed and is output to the load circuit as a DC power supply. The operation of the discharge lamp lighting device circuit of the conventional example shown in Fig. 5 will be described below. First, when the DC power supply 1 is supplied, the starting current from the resistor 10 and the capacitor 11 are used to alternately drive the n-channel MOSFET at a high frequency, so that the discharge lamp 5 is turned on. At that time, in the case where the discharge lamp 5 was not discharged, the anti-current coil

2148-4672-PF(N) '» Ahddub.ptd 第4頁 543345 ·^. 五、發明說明(2) 4|、\,電器6以及電容器7構成之LC串列共振電路之共振之 ;:从下稱為Q)大,在電容器6之兩端發生大的電壓。 用;:變:電燈5之燈絲未充熱之期間受到大電壓作 、 成所謂的冷起動,k ’包之筹命變短。 播占為工防止之’設置預熱定時器電路41 ,由如下之槿株 9 _!接疋日τ态部,由和直流電源1串聯之電阻2 0及電容哭 阻2〇並胪了極體30,陰極和直流電源1之正極連接,和電 電阻齊納二極體22 ’陰極和二極體3〇之陽極連接; ί;Λί 24,在齊納二極體22之陽極和電源1之負極 垃ΒI!電晶體25,基極與電阻23和電阻24之連接點連 ί極ΪΞ和電源1之負極連接,集極經由電阻29和電源i之 ,以及電晶體26,基極和電晶體25之集極連接, 原、7負極連接,自集極經由齊納二極體27之陽 M〇SFEH齊納二極體27之陰極連接之二極體28和η通道 MUbl· ΕΤ3之閘極連接。 雷阳9,二電容器21之電壓在由齊納二極體22、電阻23以及 二4寻決定之期間自電源"呈由電阻29作用於電晶體26 之基極,使電晶體26變成0N,藉著以二 體Π以及電晶體26之路徑·通道Μ〇_之體間極二通才 二閘極電壓變低,n通道肋8^了3之卯期間變短,提高η通 f MOSFET2、3之振盈頻率。(以下將此期間稱為預熱定時 為:月間。)因而,由抗流線圈4、電容器6以及7構成之LC共 振=路之Q、交小,放電燈5不會冷起動。然後,電容器2丨之 電壓上升時,電晶體25變成0Ν,電晶體26變成〇ρτ,在電2148-4672-PF (N) '»Ahddub.ptd Page 4 543345 · ^. V. Description of the invention (2) 4 |, \, resonance of LC series resonance circuit composed of electrical appliance 6 and capacitor 7; This is hereinafter referred to as Q), and a large voltage is generated across the capacitor 6. Use :: change: the filament of the electric lamp 5 is subjected to a large voltage during the period of non-heating, so-called cold start, the k 'package life is shortened. The pre-heating timer circuit 41 is set for the prevention of broadcasting. The following hibiscus 9 _! Is connected to the τ state part of the next day, and the resistance 20 and the capacitor 20 are connected in series with the DC power supply 1 and the voltage is reduced. The body 30, the cathode is connected to the positive pole of the DC power source 1, and is connected to the electrical resistance Zener diode 22 'the cathode is connected to the anode of the diode 30; Λ; 24, the anode and the power source 1 at the Zener diode 22 The negative electrode BIL! Transistor 25, the base is connected to the connection point of the resistor 23 and the resistor 24, and the negative electrode of the power source 1, the collector is connected to the resistor 29 and the power source i, and the transistor 26, the base and the transistor The collector of crystal 25 is connected to the original and 7 negative electrodes. The anode 28 of the Zener diode 27 is connected from the collector to the cathode 28 of the Zener diode 27 and the gate of the n-channel MUbl · ET3.极 连接。 Extremely connected. Leiyang 9, the voltage of the second capacitor 21 is determined by the Zener diode 22, the resistance 23, and the voltage of the second capacitor. The "source" acts on the base of the transistor 26 by the resistor 29, so that the transistor 26 becomes 0N. By using the two-body Π and the path 26 of the transistor 26 and the inter-body pole of the transistor M0_, the gate voltage becomes lower, and the period of the n-channel rib 8 ^ 3 becomes shorter, increasing the η-pass f MOSFET2, 3 vibration frequency. (This period is hereinafter referred to as the warm-up timing: monthly.) Therefore, the LC resonance consisting of the current-resistant coil 4, capacitors 6, and 7 = Q of the circuit, and small crossover, the discharge lamp 5 will not start cold. Then, when the voltage of the capacitor 2 丨 rises, the transistor 25 becomes ON and the transistor 26 becomes 0ρτ.

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容器6發生大的電壓,放電燈5變成點燈狀態。由於放電燈 5點燈’放電燈5之等價電阻和電容器6並聯,包含放電燈5 之LC共振電路之q變小,以後保持安定之點燈狀態。 發明要解決之課題 可是,在以往之放電燈點燈裝置,在預熱定時器期間 使電晶體26和電源1之投入同時連續的0N時,有以下之問 題點。 口 在圖5所示之放電燈點燈裝置,電晶體2 6〇N時為了令 繼續振盪,需要滿足以下之式(1 )、 7 VD28+ VD27+ VCE26>VGS3(1) 在此, VD28 :二極體28之順向壓降 V D 2 7 :齊納二極體2 7之齊納電壓 V C E 2 6 ·電晶體2 6 0 N時之集極•射極間電壓 VGS3 : η通道M0SFET3之閘極•源極間臨限值電壓 齊納二極體27依據和η通道M0SFET3之間極•源極間臨 限值電壓之關係在實用上選定約3· 5V以上之比較小之齊納 電壓值。在具有此程度之齊納電壓之齊納二極體之例子上 ,在圖7圖示NEC製RD3· 3ES(齊納電壓3· 3V)之特性。 又,在圖8表示習知例之放電燈點燈裝置之電路之各 部之波形之波形圖。圖8(A1)、(A2)各自表示預熱定時器 期間和點燈期間之副繞阻c d間之電壓,圖8 (B1 )、( B 2 )各 自表示預熱定時器期間和點燈期間之電晶體25之Vce電壓 ,圖8 (C 1 )、( C 2 )各自表示預熱定時器期間和點燈期間之A large voltage is generated in the container 6, and the discharge lamp 5 is turned on. Since the equivalent resistance of the discharge lamp 5 and the discharge lamp 5 is connected in parallel with the capacitor 6, the q of the LC resonance circuit including the discharge lamp 5 becomes small, and the stable lighting state is maintained thereafter. Problems to be Solved by the Invention However, the conventional discharge lamp lighting device has the following problems when the inputs of the transistor 26 and the power supply 1 are continuously turned ON at the same time during the preheating timer period. The discharge lamp lighting device shown in Fig. 5 requires the following formula (1) in order to continue oscillation when the transistor 2600N is used. 7 VD28 + VD27 + VCE26 > VGS3 (1) Here, VD28: two poles Forward voltage drop VD 2 7 of body 28: Zener voltage VCE 2 6 of Zener diode 27 · Collector at transistor 2 6 0 N • Inter-emitter voltage VGS3: Gate of η channel M0SFET3 • The threshold voltage between the source and the Zener diode 27 is based on the relationship between the threshold and the threshold voltage between the source and the source of the n-channel MOSFET3. Practically, a relatively small Zener voltage value above about 3.5V is selected. For an example of a Zener diode having a Zener voltage to this extent, the characteristics of RD3 · 3ES (Zener voltage 3 · 3V) made by NEC are shown in FIG. 7. Fig. 8 is a waveform diagram showing waveforms of various parts of the circuit of the discharge lamp lighting device of the conventional example. Figures 8 (A1) and (A2) respectively show the voltage between the secondary windings cd during the warm-up timer period and the lighting period, and Figures 8 (B1) and (B2) respectively show the warm-up timer period and the lighting period The Vce voltage of the transistor 25, Fig. 8 (C 1) and (C 2) respectively show the voltages during the warm-up timer period and the lighting period.

2148-4672-PF(N) ; Ahddub.ptd 第 6 頁 543345 五、發明說明(4) 電晶體26之Vce電壓,圖8(D1)、(D2)各自表示預熱定時器 期間和點燈期間之M0SFET3之閘極•源極間電壓。 由圖7得知,在齊納電流為5 m A (本產品之齊納電壓規 定電流)之情況齊納電壓為3 · 3 V,由此齊納電流增加時齊 納電壓增加,又,由此齊納電流減少時齊納電壓減少,在 1 m A之齊納電流,齊納電壓為3 V以下,在0 · 1 1 m A之齊納電 流,齊納電壓為2 · 5 V以下。由此得知,在抗流線圈4之副 繞阻c d間發生大的電壓,依據齊納二極體2 7之電流大之條 件選定齊納電壓,使得滿足式(1 )時,在抗流線圈4之副繞 阻cd間只發生小的電壓之剛開始振盪後之條件,齊納二極 體27之電流變小,因依據其條件齊納電壓也變小,無法滿 足式(1 ),具有振盪無法繼續持續之問題點。 為了避免此問題,依據在抗流線圈4之副繞阻cd間發 生小的電壓之條件使得滿足式(1 )時,依據在抗流線圈4之 副繞阻cd間發生大的電壓之條件齊納二極體27之電流變大 ,因此,齊納電壓也變大,二極體2 8之陽極電壓上升,經 由電晶體26無法將n通道M〇SFET3之閘極電流充分的旁通, 具有無法將振盪頻率挪移至不發生冷起動之高頻率之問題 點。 如上述所示’在以往之習知例,因和在抗流線圈4之 副繞阻cd發生之電壓之大小或發生電壓之有無無關(圖8 (A1 ))的令電晶體26和電源1之投入同步的無條件變成〇N (圖8(D1 )) ’變成在齊納二極體27之電流很小之區域至大 之區域為止之動作使用,在選定齊納二極體之情況,考慮2148-4672-PF (N); Ahddub.ptd page 6 543345 V. Description of the invention (4) Vce voltage of transistor 26, Figures 8 (D1) and (D2) respectively represent the preheating timer period and the lighting period The gate-source voltage of M0SFET3. It can be seen from FIG. 7 that when the Zener current is 5 m A (the Zener voltage specified by this product), the Zener voltage is 3 · 3 V. Therefore, the Zener voltage increases when the Zener current increases. When the Zener current decreases, the Zener voltage decreases. The Zener voltage is 1 V or less, the Zener voltage is 3 V or less, and the Zener voltage is 0 · 1 1 m A, and the Zener voltage is 2.5 V or less. It is known that a large voltage occurs between the secondary windings cd of the anti-current coil 4 and the Zener voltage is selected according to the condition that the current of the Zener diode 27 is large, so that when the formula (1) is satisfied, the anti-current In the condition that only a small voltage occurs between the secondary windings cd of the coil 4 immediately after the oscillation starts, the current of the Zener diode 27 becomes smaller, because according to the condition, the Zener voltage also becomes smaller, which cannot satisfy the formula (1), There is a problem that the oscillation cannot continue. In order to avoid this problem, according to the condition that a small voltage occurs between the secondary windings cd of the anti-coil coil 4 so that when formula (1) is satisfied, the condition that a large voltage occurs between the secondary windings cd of the anti-coil coil 4 is satisfied. The current of the nano-diode 27 increases, so the Zener voltage also increases, and the anode voltage of the diode 28 increases. The transistor 26 cannot sufficiently bypass the gate current of the n-channel MOSFET 3 through the transistor 26. It is impossible to shift the oscillation frequency to the problem of high frequency where cold start does not occur. As shown above, in the conventional example, the transistor 26 and the power supply 1 are not related to the magnitude of the voltage or the presence or absence of the voltage generated in the secondary winding cd of the anti-current coil 4 (Figure 8 (A1)). The unsynchronization of the input becomes 0N (Figure 8 (D1)). It becomes an operation used in a region where the current of the Zener diode 27 is small to a large region. When a Zener diode is selected, consider

2148-4672-PF(N) ; Ahddub.ptd 第7頁 543345 五、發明說明(5) 齊納電壓因齊納電流之變動而大為變動,需要將 納二極體2 7之齊納電壓值之範圍限定於窄範圍。 | ^ 難買到齊納二極體且價格貴等問題點。 ’有 又,在上述之式(1),具有溫度降低如 閘極·源極間臨限值電壓變大之特性,例如 FS10VS-12係約7· 5mV/ °C之溫度俜數,-托成衣 又你数一極體28之順向壓 降之溫度係數在溫度降低時變大,在石夕二極 2· 3mV/ °C,η通道M0SFET3和齊納-朽舻97 — _ β儿你、、J +禕·彳。~主—p+、巧、内一極體27之該溫度特性之 在低、、w時之起動:二:之式(1 )受到周圍溫度影響, …動’式⑴之右邊變大,有無法繼續振盈之 本發明之放電燈點燈裝置為解決上述之 的在於提供提供一種放電燈點燈 、,'"'、 可繼續保持振蓋,而且在預熱定時;電時器期間 而且對於周圍之溫;:::;:?用變動範圍寬之零件, 解決課題之手段度艾動也可確實的繼續振蘯。 本發明之放電燈點燈裝置, 直流電源供給之直流轉之=電源、將由該 和該變頻器電路連接上、六 貝尾級之變頻Is電路以及由 構成之放電燈負载雷抗/爪線圈、放電燈以及耦合電容器 該抗流線圈之副结卩日I “放電燈負载電路所設置之 徵在於:設置動該變頻器電路之切換元件,其特 預定之定時器期間中, 的电路,运上該直流電源後,在 在振盤頻率之各驅動週期之預定期 mn\ 2148-4672-PF(N) ; Ahddub.ptd 543345 五、發明說明(6) '' " ----- 2後將在驅動該變頻器電路之切換元件之該線圈之副繞阻 毛生之電壓旁通,作用於該切換元件,增加該切換元 振盪頻率。 又’在變頻器電路之切換元件之低電位側切換元件 問極·源極間連接了預熱定時器電路。 之 又’在變頻器電路之切換元件之高電位側切換元件之 問極•源極間連接了預熱定時器電路。 又、义頻為電路之切換元件由η通道MOSFET及p通道 MOSFET構成,將副繞阻作為該^通道M〇SFET及該道 MOSFET各自共用的。 又’將至旁通為止之預定期間設為至少振盪頻率之 1 / 4週期以内。 又,自線圈之副繞阻得到預熱定時器電路之電源。 發明之實施例 圖1係表示本發明之實施例1之放電燈點燈裝置之電路 圖’圖,2((A1)至(D2))係表示電路之主要部分之動作之波 形圖。 在圖1,1係自商用電源得到之直流電源,2及3係構成 變頻器電路之由N通道MOSFET構成之切換元件,4係·用以限 制放電燈之電流之具有2個副繞阻ab、cd之抗流線圈,5係 放電燈,6係和放電燈並聯之電容器,7係耦合電容器,1 〇 及1 1係由電阻及電容器構成之M0SFET2之起動電路,抗流 線圈4之2個之副繞阻ab、cd各自經由電阻8及9在MOSFET2 、3各自之閘極、源極間連接成M0SFET2、3交互ON、OFF。2148-4672-PF (N); Ahddub.ptd Page 7 543345 V. Description of the invention (5) The Zener voltage is greatly changed due to the change in Zener current, and the Zener voltage of the diode 2 7 needs to be changed. The range is limited to a narrow range. | ^ Difficult to buy Zener diodes and expensive. 'Yes, in the above formula (1), there is a characteristic that the temperature decreases as the threshold voltage between the gate and the source becomes larger, for example, the FS10VS-12 series has a temperature range of about 7. 5mV / ° C, The temperature coefficient of the forward voltage drop of the polar body 28 when you are ready to wear becomes larger when the temperature decreases. At the Shixi Diode 2.3 · mV / ° C, the η channel M0SFET3 and Zener-decay 97 — _ β 儿 你,, J + 祎 · 彳. ~ Main—p +, Qiao, the temperature of the inner polar body 27 starts at low, w: Second: The formula (1) is affected by the ambient temperature, and the right side of the 'moving' formula becomes larger, which is impossible. The discharge lamp lighting device of the present invention that continues to vibrate is to provide a discharge lamp lighting, """, which can continue to maintain the vibration cover, and at the preheating timing; during the electric timer and for Ambient temperature; :::;:? With a wide range of components, AiDong can continue to vibrate with certainty. In the discharge lamp lighting device of the present invention, the DC-to-DC power supplied by the DC power source = the power source, the inverter Is circuit which is connected to the inverter circuit, a six-bell tail stage, and the lightning lamp / claw coil composed of the discharge lamp load, The discharge lamp and the coupling capacitor of the anti-current coil of the capacitor are closed for the next day. "The discharge lamp load circuit is provided with the following features: the switching element of the inverter circuit is set, and the circuit of the special timer period is set up. After this DC power supply, in the predetermined period mn \ 2148-4672-PF (N); Ahddub.ptd 543345 at each drive cycle of the vibration plate frequency V. Description of the invention (6) '' " ----- 2 after The bypass voltage of the secondary winding of the coil driving the switching element of the inverter circuit will be bypassed to act on the switching element to increase the switching element oscillation frequency. Also on the low potential side of the switching element of the inverter circuit A preheating timer circuit is connected between the switching element and the source of the switching element. A preheating timer circuit is connected between the switching element and the source of the switching element on the high potential side of the inverter circuit. Frequency is the circuit The switching element is composed of an n-channel MOSFET and a p-channel MOSFET, and the secondary winding is shared by the ^ -channel MOSFET and the MOSFET. Also, the predetermined period until the bypass is set to at least 1/4 of the oscillation frequency. Within the cycle. In addition, the power of the preheating timer circuit is obtained from the secondary winding of the coil. Embodiments of the invention FIG. 1 is a circuit diagram of a discharge lamp lighting device according to Embodiment 1 of the present invention, FIG. 2 ((A1) To (D2)) are waveform diagrams showing the operation of the main part of the circuit. In Figure 1, 1 is a DC power source obtained from a commercial power source, 2 and 3 are switching elements composed of N-channel MOSFETs that constitute an inverter circuit, 4 Series · Current-limiting coils with 2 secondary windings ab and cd to limit the current of the discharge lamp, 5 series discharge lamps, 6 series capacitors connected in parallel with the discharge lamp, 7 series coupling capacitors, 10 and 11 The starting circuit of M0SFET2 composed of a resistor and a capacitor, and the two secondary windings ab and cd of the anti-current coil 4 are connected to the gates and sources of the MOSFETs 2 and 3 respectively through resistors 8 and 9 to form M0SFET2 and 3, which are turned on and off. OFF.

2148-4672-PF(N) i Ahddub.ptd 第9頁 表干;;定:,i、圖2說明動作。圖mn'u2)“ 2(BU、(B2)各自表示預数定^間之副繞阻d間之電壓,圖 Μ…疋叶&'期間和點燈期間之電晶2148-4672-PF (N) i Ahddub.ptd Page 9 Surface dry; fixed: i, Figure 2 illustrates the action. Figure mn'u2) "2 (BU, (B2) each represents the voltage between the auxiliary windings d between the predetermined number ^, Figure M ... The transistor during the 疋 & 'period and the lighting period

543345 五、發明說明(7) ΐ:ί;:之f間控制流向放電燈負載電路之高頻電流之 和電、7H t 1係—極體,在抗流線圈4之副繞阻cd之4側 之動作電源, 一L電壓平滑化’得到定時器電路41 預熱定時器電路4 1由如下之構件構成,+ fl± π , 在二極體31和電衮哭^9 +、* /偁忏構烕,疋時杰部,由 電阻2。和電容;二;3成2”妾點與電源1之負極間串接之 電容器21之連接Si ::納二極體22 ’陰極與電阻2〇和 22之陽極和電源^負極之電阻23及電阻日24 ’在齊納二極體 阻23和電阻24之連接點、查拉 # ,電日日體25,基極與電 集極經由電阻2 9 ϋ ," ,射極和電源1之負極連接, 子d連接電7體1 1道_3之閉極電阻9連接之端 和電源k = =體25之集極連接,射極 ^ ^ ^ ^ ^27 ^ ^ /-^28^7 Ϊ ^ # ' M0SFET3之閘極連接;二 之—極體28和η通遏 連,陰極和電晶體M 陽極和電晶體25之射極 體33並聯。 木不連接,以及電容器34,和二極 33,知例之相異點在於,設置二極體 SFETrr門:,^ M0SFET3之閘極電阻9連接之端子^ 、543345 V. Description of the invention (7) ΐ: ί ;: the sum of the high-frequency current flowing to the load circuit of the discharge lamp between f, 7H t 1 series-pole body, the secondary winding cd 4 of the anti-current coil 4 On the side of the operating power supply, one L voltage is smoothed and the timer circuit 41 is obtained. The preheating timer circuit 41 is composed of the following components, + fl ± π, the diode 31 and the electric circuit ^ 9 +, * / 偁忏 建 烕, 疋 时 杰 部, by resistance 2. And capacitors; two; 30% 2 ”points connected to the negative electrode of power supply 1 connected to capacitor 21 Si :: nanodiode 22 'cathode and resistors 20 and 22 anode and power source resistance 23 and negative electrode 23 and Resistance day 24 'at the connection point of Zener diode body resistance 23 and resistance 24, Chara #, electric day body 25, base and collector via resistor 2 9 ϋ, "emitter and power supply 1 Negative connection, sub d is connected to the electric body 7 1 1 _3 closed-end resistor 9 connection end and the power supply k = = body 25 collector connection, emitter ^ ^ ^ ^ ^ 27 ^ ^ /-^ 28 ^ 7 Ϊ ^ # 'Gate connection of M0SFET3; Second-pole body 28 and eta pass connection, cathode and transistor M anode and transistor 25 emitter body 33 are connected in parallel. The wood is not connected, and the capacitor 34, and the diode 33. The difference between the known examples is that a diode SFETrr gate is provided :, ^ M0SFET3, the gate resistance 9 connection terminal ^,

543345 五、發明說明(8) 體2 5之Vce電壓,圖2(C1)、(C2)各自表示預熱定時器期 和點燈期間之電晶體26之Vce電壓,圖2(D1 )、(D2)各自間 示預熱定時器期間和點燈期間之M0SFET3之閘極•源極間& 電壓。此外,圖2和在係習知例所示之圖§ ( A 1 )至(D 2 )對 應。 在圖1 ,投入電源1後,利用來自電容器1 1之起動電节 交互以高頻驅動η通道MOSFET。此時至電容器21之充電電;"· 壓上升至可驅動電晶體25之基極之電壓為止電晶體25持巧 OFF(圖2(Β1))。 ’ 在習知例,電晶體2 5之陰極經由電阻2 9和直流電源j 之正極連接,但是在本實施例,因和副繞阻C(j内與n通道 Μ 0 S F E T 3之閘極電阻9連接之端子d連接,波形和圖2 ( a 1 )之 波形對應。 此時,在抗流線圈4之副繞阻Cd之d端子為負之半週期 (圖2 (A 1 ))’經由電阻2 9以電晶體2 6之基極為負之極性將 電容器34充電。在此情況之充電電壓值受到二極體33之順 向壓降電壓限制,變成約〇.6V。即,在副繞阻cd2d端子' 為負之週期電晶體26變成OFF(圖2(C1))。其次,副繞阻之 電C反相受成d纟而子為正之半週期時,經由電阻2 g以和 負之半週期相反之極性將電容器34充電。在此, 擇電阻2 9及電容哭34之值,士岡9^|、仏 4冬值 如圖2 C C 1 )所示,在副繞阻之d 鈿子到達正之大峰值為止之時間七1使電容器Μ之電壓變成 比電晶體2 6之基極臨限值電壓大。 P將η通道M0SFET3之閘極•源極間電壓超過其臨限543345 V. Description of the invention (8) The Vce voltage of the body 25, Figures 2 (C1) and (C2) respectively represent the Vce voltage of the transistor 26 during the warm-up timer period and the lighting period, and Figure 2 (D1), ( D2) The gate-source & voltage of M0SFET3 during the warm-up timer period and the lighting period are shown separately. In addition, FIG. 2 corresponds to the diagrams § (A 1) to (D 2) shown in the conventional example. In FIG. 1, after the power source 1 is turned on, the n-channel MOSFET is driven at a high frequency by using the start-up energy from the capacitor 11 to interact. At this time, the voltage of the capacitor 21 will be kept OFF until the voltage rises to a voltage that can drive the base of the transistor 25 (Fig. 2 (B1)). '' In the conventional example, the cathode of the transistor 25 is connected to the positive electrode of the DC power source j through the resistor 29, but in this embodiment, the gate resistance of the secondary winding C (in j and the n-channel M 0 SFET 3) The 9-connected terminal d is connected, and the waveform corresponds to the waveform in Fig. 2 (a 1). At this time, the d terminal of the secondary winding Cd of the anti-current coil 4 is a negative half cycle (Fig. 2 (A 1)) 'via The resistor 29 charges the capacitor 34 with the negative polarity of the base of the transistor 26. In this case, the charging voltage value is limited by the forward voltage drop voltage of the diode 33 and becomes about 0.6V. That is, in the secondary winding When the resistance cd2d terminal 'is negative, the transistor 26 is turned off (Fig. 2 (C1)). Secondly, when the secondary winding electric current C is reversed to become d 子 and the child is a positive half cycle, the resistance is 2 g and negative The half-cycle has the opposite polarity to charge the capacitor 34. Here, the values of resistor 29 and capacitor 34 are selected. The values of Shigang 9 ^ | and 仏 4 are shown in Figure 2 CC 1). The time until the mule reaches a positive large peak value 7 makes the voltage of the capacitor M larger than the threshold voltage of the base of the transistor 26. The gate-source voltage of η channel M0SFET3 exceeds its threshold

2148-4672-PF(N) ; Ahddub.ptd 第11頁 543345 五、發明說明(9) 值電壓時(圖2 ( D 1 ))設為時間11。 經過時間tl後,若電容器34之電壓達到電晶體26之基 極臨限值電壓,電晶體26在時間t2之期間變成on(圖2 (C1) ),藉著經由二極體28、齊納二極體27使n通道M0SFET3之 閘極電流旁通,閘極電壓變低,η通道M0SFET3之導通期間 、s:短,Μ 0 S F Ε Τ 2、3之振盪頻率變高,可防止放電燈5冷起 動。在此,選定電阻9、齊納二極體27之電壓,使得在時 間tl之副繞阻之d端子之電壓比η通道M0SFET3之閘極•源 極間臨限值電壓大,而且齊納二極體27之電流不會變成遠 低於齊納電壓規定電流。又,再變成副繞阻之d端子為負 之週期時,因經由電阻29使電晶體26之基極電壓變成負電 位般將電容器34充電,電晶體2 6變成OFF (圖2(C1 ))。以後 ,電容裔21之充電電壓上升,至電晶體25變成on(圖2(B2) 之狀態)為止繼續重複動作。 過了預熱定時器期間,電晶體2 5之基極電壓偏壓成導 通狀悲時(圖2 (B 2 )),在副繞阻之d端子為正之情況,電晶 體25變成ON,電晶體26變成OFF(圖2(C2))。 即’預熱定時器期間以後電晶體26總是持續〇FF。 於是’在振盪頻率之每一週期控制成在η通道M0SFET3 之閘極•源極間電壓超過了其臨限值電壓之時間t丨後使電 晶體26變成ON。 如以上所示’若依據本發明之實施例1,因在振盪頻 率之每一週期控制成在n通道M〇SFET3之閘極•源極間電壓 超過了其臨限值電壓之時間t丨後使電晶體2 6變成〇N,在預2148-4672-PF (N); Ahddub.ptd Page 11 543345 V. Description of the invention (9) When the voltage value (Figure 2 (D1)) is set to time 11. After the time t1, if the voltage of the capacitor 34 reaches the threshold voltage of the base of the transistor 26, the transistor 26 becomes on during time t2 (Fig. 2 (C1)). By passing through the diode 28, Zener The diode 27 bypasses the gate current of the n-channel M0SFET3, and the gate voltage becomes lower. The conduction period of the n-channel M0SFET3, s: is short, and the oscillation frequency of M 0 SF Ε Τ 2 and 3 becomes high, which can prevent the discharge lamp. 5 Cold start. Here, the voltage of the resistor 9 and the Zener diode 27 is selected so that the voltage of the d terminal of the secondary winding at time t1 is larger than the threshold voltage between the gate and source of the η channel M0SFET3, and The current of the pole body 27 does not become much lower than the prescribed current of the Zener voltage. When the d terminal of the secondary winding becomes negative again, the capacitor 34 is charged as the base voltage of the transistor 26 becomes negative potential via the resistor 29, and the transistor 26 is turned off (Figure 2 (C1)) . After that, the charging voltage of the capacitor 21 rises, and the operation is repeated until the transistor 25 becomes on (the state of FIG. 2 (B2)). After the warm-up timer period, when the base voltage of transistor 25 is biased to a conductive state (Figure 2 (B 2)), when the d terminal of the secondary winding is positive, transistor 25 becomes ON, and The crystal 26 is turned OFF (FIG. 2 (C2)). That is, the transistor 26 is always ONF after the 'warm-up timer period. Therefore, at each period of the oscillation frequency, the transistor 26 is turned ON after the time t1 between the gate-source voltage of the n-channel MOSFET3 exceeds its threshold voltage. As shown above, 'If according to the embodiment 1 of the present invention, since the period between the oscillation frequency and the gate-source voltage of the n-channel MOSFET 3 exceeds the threshold voltage time t 丨The transistor 26 is changed to 0N.

2148-4672-PF(N) Ahddub.ptd 第12頁 543345 五、發明說明(10) - 熱定時器期間能使放電燈5以未至冷起動之振盪頻率確實 的繼續振盪。 、 又’因在該預熱定時器期間中在使MOSFET切換元件之 閘極電流旁通之電路使用之齊納二極體2 7可避免在齊納電 流很小之區域使用,可選定寬之齊納電壓值之變動範圍, 可解決其難買到、價格貴等之問題。 又,若將在電晶體2 6導通之時間11之副繞阻之d端子 之電壓選定成遠大於n通道MOSFET3之閘極•源極間臨限值 電壓,可避免受到η通道MOSFET3或二極體28等之溫度特性 影響’可解決在低溫時之起動等無法繼續振盪之問題點。 此外,在副繞阻cd間之預熱定時器期間之電壓在振盪 頻率之週期之1/4變成最大(圖2(A1 )),以後轉為減少,然 後’隨著11變大電晶體26導通時η通道MOSFET3之閘極•源 極間電壓減少(圖2 ( D 1 ))。因此,若將在預熱定時器期間 至私日日體2 6變成Ο Ν為止之時間11選定成在該期間之振盪頻 率之週期之1/4以下,因η通道M0SFET之閘極•源極間電壓 =會減少,可防止副繞阻之d端子之電壓過度減少或振盪 jT止,齊納一極體2 7之齊納電壓可選定大的變動範圍, 又’可不易受到電路之周圍溫度之變動等影變。 實施例2 '" 圖3係表不本發明之實施例2之放電燈點燈裝置之電絡 圖。 在實施例1,將在圖1之預熱定時器電路41*n通道 MOSFET3之閘極•源極間連接,但是實施例2係在構造上將2148-4672-PF (N) Ahddub.ptd Page 12 543345 V. Description of the invention (10)-During the thermal timer, the discharge lamp 5 can continue to oscillate at an oscillation frequency that is not even cold-started. Because the Zener diode 2 7 used in the circuit that bypasses the gate current of the MOSFET switching element during the preheating timer period can be avoided in a region with a small Zener current, a wider range can be selected. The variation range of the Zener voltage value can solve the problems of difficult to buy and expensive. In addition, if the voltage of the d terminal of the secondary winding at the time when the transistor 2 6 is turned on is selected to be much larger than the threshold voltage between the gate and source of the n-channel MOSFET3, it can be prevented from being affected by the n-channel MOSFET3 or the second electrode. The influence of the temperature characteristics of the body 28 and the like can solve the problem that the oscillation cannot be continued such as the start-up at a low temperature. In addition, the voltage during the warm-up timer between the secondary windings cd becomes the maximum at 1/4 of the period of the oscillation frequency (Figure 2 (A1)), then it decreases, and then becomes larger as 11 becomes 26 The gate-source voltage of the n-channel MOSFET3 decreases during turn-on (Figure 2 (D1)). Therefore, if the time 11 during the warm-up timer period until the private day body 2 6 becomes 0 Ν is selected to be less than 1/4 of the period of the oscillation frequency during this period, the gate and source of the n-channel M0SFET The inter-voltage = will be reduced, which can prevent the voltage of the d terminal of the secondary winding from being excessively reduced or oscillated. Changes such as changes. Embodiment 2 '" Fig. 3 is a circuit diagram showing a discharge lamp lighting device according to Embodiment 2 of the present invention. In the first embodiment, the gate and source of the preheating timer circuit 41 * n channel MOSFET3 of FIG. 1 are connected, but the second embodiment

2148-4672-PF(N) ; Ahddub.ptd 第13頁 543345 五、發明說明(11) 預熱定時器電路4 1和與電源1之高電位側連接之η通道 M0SFET2之閘極•源極間連接,使得在預熱定時器期間使η 通道M0SFET2之閘極電流旁通的,其他之構造及動作和實 施例1的相同,省略說明,但是可得到和實施例1之情況一 樣之效果。 實施例3 圖4係表示本發明之實施例3之放電燈點燈裝置之電路 圖〇 本實施例係在構造上將實施例2之在圖3之η通道 M0SFET3置換為ρ通道MOSFET,在η通道M0SFET2及η通道 M0SFET3之共同連接之閘極•源極間經由電阻8連接抗流線 圈4之副繞阻4 b的,其他之構洪菸叙从$豳 傅k及動作和貫施例1的相同, 省略說明,但是可使得電路構生^… — 十主w 搂十μ里 攝造間皁,得到和實施例1之 f月況一樣之效果。 此外,在實施例1〜3,決定益& 士 時器電路41之電阻20及電容哭?、…、疋呀态期間之預熱定 同,因用二極體31、電容器驅動電源和習知例不 不附加特殊之電路,也可和 之抗流線圈4之副繞阻發生之古^ T包π 1木直抓〖生耦口 ^ ^ χ ^ ^ ^ ^ Μ頻電壓整流•平滑而得到 切換元件MOSFET2及MOSFET3 之其中之一之閘極·源極間速垃、 八犯々4里 j逆接,可簡化電路 發明之效果 本發明因如以上之說明辦— 果 汀不構成,具有以下所示之效 本發明之放電燈點燈2148-4672-PF (N); Ahddub.ptd Page 13 543345 V. Description of the invention (11) Preheat timer circuit 41 1 Gate and source between n channel M0SFET2 connected to the high potential side of power supply 1 It is connected so that the gate current of the n-channel MOSFET 2 is bypassed during the warm-up timer. The other structures and operations are the same as those of the first embodiment, and the description is omitted, but the same effect as that of the first embodiment can be obtained. Embodiment 3 FIG. 4 is a circuit diagram showing a discharge lamp lighting device according to Embodiment 3 of the present invention. This embodiment is a structure in which the n-channel MOSFET 3 of FIG. 3 in FIG. 3 is replaced with a p-channel MOSFET in the n-channel. The gate and gate of M0SFET2 and η channel M0SFET3 are connected in common. The source is connected to the secondary winding 4 of the anti-winding coil 4 via resistor 8, and the other structures are described from $ 豳 fuk and the operation and implementation of Example 1. It is the same, the description is omitted, but the circuit construction can be made ^ ...-ten main w 搂 ten μ 摄 to make room soap, to obtain the same effect as the condition of f in Example 1. In addition, in Embodiments 1 to 3, it is determined whether the resistance 20 and the capacitance of the timer circuit 41 should be crying. The preheating period during the… state is the same, because the diode 31, the capacitor driving power source, and the conventional example do not add special circuits, and can also be associated with the secondary winding of the anti-current coil 4. T package π 1 wooden straight grab 〖Biocouple port ^ ^ χ ^ ^ ^ ^ Frequency frequency voltage rectification and smoothing to obtain one of the switching element MOSFET2 and MOSFET3 gate, source-to-source speed, eight crimes 4 miles j Reverse connection can simplify the effect of the circuit invention. The present invention is implemented as described above. The fruit is not formed, and has the following effects.

2148-4672-PF(N) ; Ahddub.ptd 第14頁 543345 五、發明說明(12) 流電源供給之直流轉換為高頻電流之變頻器電路以及由和 該變頻器電路連接之抗流線圈、放電燈以及耦合電容器構 成之放電燈負載電路,用在該放電燈負載電路所設置之該 抗流線圈之副繞阻驅動該變頻器電路之切換元件,因設置 了預熱定時器電路,送上該直流電源後,在預定之定時器 期間中,在振盪頻率之各驅動週期之預定期間後將在驅動 該變頻器電路之切換元件之該線圈之副繞阻發生之電壓旁 通,作用於該切換元件,增加該切換元件之振盪頻率,在 預熱定時器期間能以未至冷起動之振盪頻率確實的繼續振 盪。 又,在預熱定時器期間用於切換元件之閘極電流之旁 通之齊納二極體可採用變動範圍寬之零件,而且對於周圍 之溫度變動也可確實的繼續振盪。 又,因在變頻器電路之切換元件之低電位側切換元件 之閘極•源極間連接了預熱定時器電路,在預熱定時器期 間能以未至冷起動之振盪頻率確實的繼續振盪。 又,在預熱定時器期間用於切換元件之閘極電流之旁 通之齊納二極體可採用變動範圍寬之零件,而且對於周圍 之溫度變動也可確實的繼續振盪。 又,因在變頻器電路之切換元件之局電位側切換元件 之閘極•源極間連接了預熱定時器電路,在預熱定時器期 間能以未至冷起動之振盪頻率確實的繼續振盪。 又,在預熱定時器期間用於切換元件之閘極電流之旁 通之齊納二極體可採用變動範圍寬之零件,而且對於周圍2148-4672-PF (N); Ahddub.ptd Page 14 543345 V. Description of the invention (12) Inverter circuit converted from high-frequency current by direct current supplied by the power source, and by a current-resistant coil connected to the inverter circuit, The discharge lamp load circuit composed of a discharge lamp and a coupling capacitor is used to drive the switching element of the inverter circuit by the secondary winding of the anti-current coil provided in the discharge lamp load circuit. After the DC power supply, in a predetermined timer period, after a predetermined period of each driving cycle of the oscillating frequency, a voltage bypass occurs in the secondary winding of the coil driving the switching element of the inverter circuit, and acts on the The switching element increases the oscillation frequency of the switching element, and can continue to oscillate with the oscillation frequency that has not reached the cold start during the warm-up timer. In addition, the zener diode used for bypassing the gate current of the switching element during the warm-up timer can use a wide range of components, and can continue to oscillate reliably with respect to ambient temperature fluctuations. In addition, the preheating timer circuit is connected between the gate and source of the switching element on the low potential side of the inverter circuit. During the preheating timer period, it can continue to oscillate at the oscillation frequency that has not reached the cold start. . In addition, the zener diode used for bypassing the gate current of the switching element during the warm-up timer can use a wide range of components, and can continue to oscillate reliably with respect to ambient temperature fluctuations. In addition, because the preheat timer circuit is connected between the gate and source of the local potential side switching element of the switching element of the inverter circuit, it can continue to oscillate reliably at the oscillation frequency before the cold start during the preheat timer. . In addition, the Zener diode used for bypassing the gate current of the switching element during the warm-up timer can use a wide range of parts, and

2148-4672-PF(N) i Ahddub.ptd 第15頁 543345 五、發明說明(13) 之溫度變動也可確實的繼續 又,因變頻器電路之切 MOSFET構成,將副繞阻作為 MOSFET各自共用的,可簡化 又,因將至旁通為止之 1 / 4週期以内,可防止以後| 或振盪停止,齊納二極體之 圍,又,可不易受到電路之 又,因自線圈之副繞阻 不附加特殊之電路,也可和 其中之一之閘極•源極間連 振盪。 換元件由η通道MOSFET及p通道 該η通道M〇SFET及該p通道 電路構造。 預定期間設為至少振盪頻率之 4繞阻之d端子之電壓過度減少 齊納電壓可選定大的變動範 周圍溫度之變動等影響。 得到預熱定時器電路之電源, 切換元件M0SFET2及M0SFET3之 接,可簡化電路。2148-4672-PF (N) i Ahddub.ptd Page 15 543345 V. Explanation of the invention (13) The temperature fluctuation can also be surely continued. Because the inverter circuit cuts the MOSFET structure, the secondary winding is shared as the MOSFET. It can be simplified, because it will be within 1/4 period until the bypass, which can prevent future | or oscillation stops, the zener diode is surrounded, and it is not easy to be affected by the circuit, because the secondary winding of the self-coil No special circuit is added to the resistor, and it can also oscillate with one of its gate and source. The switching element is composed of an n-channel MOSFET and a p-channel, an n-channel MOSFET, and the p-channel circuit. The predetermined period is set so that the voltage at the d terminal of at least 4 windings of the oscillation frequency is excessively reduced. The Zener voltage can be selected to have a large fluctuation range, such as the influence of fluctuations in ambient temperature. The power of the preheat timer circuit is obtained, and the connection of the switching elements M0SFET2 and M0SFET3 can simplify the circuit.

2148-4672-PF(N) Ahddub.ptd 第16頁 543345 圖式簡單說明 圖1係表示本發明之實施例1之放電燈點燈裝置之電路 圖。 圖2係表示本發明之實施例1之放電燈點燈裝置之電路 之各部之波形之波形圖。 圖3係表示本發明之實施例2之放電燈點燈裝置之電路 圖。 圖4係表示本發明之實施例3之放電燈點燈裝置之電路 圖。 圖5係以往之放電燈點燈裝置之電路圖。 圖6係以往之放電燈點燈裝置之直流電源之電路圖。 圖7係表示齊納二極體特性例之特性圖。 圖8係表示以往之放電燈點燈裝置之電路之各部之波 形之波形圖。 符號說明 1〜直流電源; 1 a〜父流電源, 1 b〜二極體電橋; 1 c〜電解電容器; 2〜MOSFET ; 3〜MOSFET ; 4〜抗流線圈; ab〜抗流線圈4之副繞阻; cd〜抗流線圈4之副繞阻; a〜抗流線圈4之主繞阻;2148-4672-PF (N) Ahddub.ptd Page 16 543345 Brief description of the drawings Fig. 1 is a circuit diagram showing a discharge lamp lighting device according to the first embodiment of the present invention. Fig. 2 is a waveform diagram showing waveforms of various parts of the circuit of the discharge lamp lighting device according to the first embodiment of the present invention. Fig. 3 is a circuit diagram showing a discharge lamp lighting device according to a second embodiment of the present invention. Fig. 4 is a circuit diagram showing a discharge lamp lighting device according to a third embodiment of the present invention. Fig. 5 is a circuit diagram of a conventional discharge lamp lighting device. Fig. 6 is a circuit diagram of a DC power supply of a conventional discharge lamp lighting device. FIG. 7 is a characteristic diagram showing an example of characteristics of a Zener diode. Fig. 8 is a waveform diagram showing waveforms of various parts of a circuit of a conventional discharge lamp lighting device. Explanation of symbols 1 ~ DC power supply; 1a ~ parent current power supply, 1b ~ diode bridge; 1c ~ electrolytic capacitor; 2 ~ MOSFET; 3 ~ MOSFET; 4 ~ current-resistant coil; ab ~ Secondary winding resistance; cd ~ secondary winding resistance of the anti-current coil 4; a ~ main winding resistance of the anti-current coil 4;

2l48-4672-PF(N) ; Ahddub.ptd 第17頁 5433452l48-4672-PF (N); Ahddub.ptd page 17 543345

2148-4672-PF(N) ; Ahddub.ptd2148-4672-PF (N); Ahddub.ptd

第18頁Page 18

Claims (1)

543345 六、申請專利範圍 1 · 一種放 流電源供給之 該變頻器電路 成之放電燈負 抗流線圈之副 其特徵在 設置了預 之疋時器期間 將在驅動該變 之電壓旁通, 頻率。 2·如申請 在變頻器電路 極間連接了預 3.如申請 在變頻器電路 極間連接了預 4·如申請 變頻器電路之 成’將副繞阻 用的。 5·如申請 置,其中,將 1 / 4週期以内c 電燈點燈裝置,包括:直流電源、將由該 直流轉換為高頻電流之變頻器電路以及由 連接之抗流線圈、放電燈以及輕合電容器 栽電路,用在該放電燈負載電路所設置之 繞阻驅動該變頻器電路之切換元件, 於: 熱定時器電路,送上該直流電源後,在預 中’在振盪頻率之各驅動週期之預定期間 頻為電路之切換元件之該線圈之副繞阻發 作用於該切換元件,增加該切換元件之振 專利範圍第1項之放電燈點燈裝置,其中, 之切換元件之低電位側切換元件之閘極· 熱定時器電路。 專利範圍第1項之放電燈點燈裝置,其中, 之切換元件之高電位側切換元件之閘極· 熱定時器電路。 專利範圍第1項之放電燈點燈裝置,其中, 切換元件由n通道M0SFET及5通道M0SFET構 作為該η通道MOSFET及該p通道M〇SFET各自圍第1、2、3或4項之放電燈點燈裝 方通為止之預定期間設為至少振盡頻率 直 和 構 該 定 後 生 盪 源 源 共 之543345 VI. Scope of patent application 1 · A type of inverter power supply is provided by the inverter circuit, which is the secondary of the negative current coil of the discharge lamp. It is characterized by setting the pre-timer to bypass the voltage that drives the transformer. 2 · If you apply a pre-connect between the inverter circuit poles. 3.If you apply a pre-connect between the inverter circuit poles. 4 · If you apply for the inverter circuit's component, it will be used for secondary winding. 5. · If you apply, the c lamp lighting device within 1/4 cycle includes: DC power supply, inverter circuit that converts this DC to high frequency current, and connected anti-current coil, discharge lamp and light Capacitor circuit is used to drive the switching element of the inverter circuit with windings set in the load circuit of the discharge lamp, in: a thermal timer circuit, after sending the DC power, in the drive cycle of the oscillation frequency The predetermined period of time is the secondary winding of the switching element of the circuit. The secondary winding of the switching element is used for the switching element, and the vibration of the switching element is increased by the discharge lamp lighting device of item 1 of the patent range. Among them, the low potential side of the switching element Gate and thermal timer circuit of switching element. The discharge lamp lighting device according to item 1 of the patent, wherein the gate and thermal timer circuits of the high-potential side switching element of the switching element. The discharge lamp lighting device of the first item of the patent scope, wherein the switching element is composed of n-channel MOSFET and 5-channel MOSFET as the n-channel MOSFET and the p-channel MOSFET respectively discharges in the first, second, third or fourth item. The predetermined period of time until the lamp is turned on is set to at least the frequency of vibration and the source of the vibration 2148-4672-PF(N) ; Ahddub.ptd 第19頁 543345 六、申請專利範圍 6. 如申請專利範圍第1、2、3或4項之放電燈點燈裝 置,其中,自線圈之副繞阻得到預熱定時器電路之電源。 7. 如申請專利範圍第5項之放電燈點燈裝置,其中, 自線圈之副繞阻得到預熱定時器電路之電源。2148-4672-PF (N); Ahddub.ptd Page 19, 543345 6. Application for patent scope 6. For the application of patent lamp scope item 1, 2, 3 or 4 for the discharge lamp lighting device, in which the secondary winding of the self-coil Obtain power to the preheat timer circuit. 7. For the discharge lamp lighting device according to item 5 of the scope of patent application, wherein the secondary winding of the coil obtains the power of the preheating timer circuit. 2148-4672-PF(N) ; Ahddub.ptd 第20頁2148-4672-PF (N); Ahddub.ptd Page 20
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