TW543130B - Bonding tool, bonding stage, front part of bonding tool, and stage of bonding stage - Google Patents

Bonding tool, bonding stage, front part of bonding tool, and stage of bonding stage Download PDF

Info

Publication number
TW543130B
TW543130B TW091106810A TW91106810A TW543130B TW 543130 B TW543130 B TW 543130B TW 091106810 A TW091106810 A TW 091106810A TW 91106810 A TW91106810 A TW 91106810A TW 543130 B TW543130 B TW 543130B
Authority
TW
Taiwan
Prior art keywords
tool
wire
patent application
scope
item
Prior art date
Application number
TW091106810A
Other languages
Chinese (zh)
Inventor
Naoki Sakata
Koichiro Maemura
Hiroshi Kawachi
Tetsuo Yashiki
Toshiya Takahashi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of TW543130B publication Critical patent/TW543130B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/79Apparatus for Tape Automated Bonding [TAB]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/787Means for aligning
    • H01L2224/78743Suction holding means
    • H01L2224/78745Suction holding means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/78981Apparatus chuck
    • H01L2224/78985Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/79Apparatus for Tape Automated Bonding [TAB]
    • H01L2224/797Means for aligning
    • H01L2224/79743Suction holding means
    • H01L2224/79745Suction holding means in the upper part of the bonding apparatus, e.g. in the pressing head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/79Apparatus for Tape Automated Bonding [TAB]
    • H01L2224/79981Apparatus chuck
    • H01L2224/79985Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention provides a bonding tool and bonding stage, which can free to change a front part. The bonding tool is used for semi-conductor set-up that it is formed from the front part and a shank. The characteristic is that a base body, formed by the front part, and a protruding part, protruded from the base body, are integrated. The tool face of protruding part is covered with gas synthesized diamond. The front part and the shank are fixed by mechanism or vacuum adsorption.

Description

543130 經濟部智慧財產局員工消費合作社印製 A7 9146pif.doc/008 五、發明說明(丨) 發明領域 本發明係關於安裝1C、LSI等半導體元件時所使用的 打線工具(bonding tool)及/或打線台(bonding stage)的結 構。 發明背景 爲引出半導體元件所具有的電特性,必需將半導體 元件上所形成的電極、封裝(package)的引線(lead)、以及 此引線和接線基板的外部端子電性連接。半導體元件側的 電極與引線的接合,習知是藉著由金或銅等構成的金屬細 線作爲導線’使用稱爲毛細管(capillary)的工具將之〜根 根地接合的方法,係稱爲金屬線打線(wire bonding)法,或 是藉著將在形成有圖案的銅箔上鍍錫而稱爲載膜(fUm carrier)的引線,使用加熱到規定溫度的打線工具和打線 台’在半導體兀件上的所有電極上統一連接所有引線的方 式’稱爲貼帶自動接合方式(Tape Automated Bonding,TAB) 等的方法進行:。這裏所說的打線工具和打線台係成對安裝 於打線裝置上◦一般而言,在位於下方且將工具面朝上固 疋日又置之打線台的工具面上,按規定精確度虛擬確定半導 體元件、封裝的引線部分、接線基盤等的位置,再於上方 將工具面朝下之可移動設置之打線工具加壓接合。藉著此 接合的方法,在打線工具或打線臺中需要設有真空吸附機 構。再者,根據此接合方法,加熱機構必需在一方或雙方。 最近爲將半導體元件與形成於膜或玻璃上的接線直 接接合,因此,需使用加熱到規定溫度的打線工具和打線 4 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) c請先閱讀背面之注意事項再填寫本頁} I ϋ 1 n^WJ· ϋ ml am— 線f· 543130 9146pif-doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(、) 台。 另一方面’引線和接線基板、及引線框架(lead frame) 之外部端子的連接,使用加熱到規定溫度的打線工具和打 線台將鍍錫的引線或未鍍錫的引線、經由絲網印刷等成形 於接線基板上的電極或鍍金的引線,與鍍金或鍍銀的引線 框架相接合。 最近’在1C晶片中,介由聚醯胺等粘著貼帶將引線 框架直接貼附在半導體元件上。然後,介由前述之金屬線 接合方法將半導體元件上所形成的電極與引線框架相互接 合。在此情形下,當引線框架貼附在半導體元件上之際, 需使用加熱到規定溫度的打線工具和打線台。 在此’所使用的打線工具和打線台係由柄(shank)部、 前端部以及台座部和台部所構成。柄部和台座部習知係使 用由鉬、超硬合金、鎳基合金、鎢或鎢合金、鐵鎳鈷合金、 不銹鋼、鐵鎳合金、鈦或鈦合金等所製作的金屬製品。爲 改良前端部和台部之工具面的平坦度、耐磨損性、溫度分 佈等,前端部和台部將氣相合成金剛石、金剛石單晶、金 剛石燒結體、立方晶系氮化硼燒結體等的硬質物質貼附在 上述金屬製的前端部上使用。打線工具和/或打線台的加 熱係在將插入卡座加熱器的熱塊體安裝於上述柄部和/或 台座部之後,再進行動作。再者,將組裝於AIN、SiC等 基材上之通電加熱機構的卡座加熱器,插入在前端部與柄 部和/或台部與台座部之間,再以機械或真空吸附等的方 式固定,以進行動作。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 ------L丨丨-1丨丨—•丨—!丨—丨·丨———丨丨丨-· (請先閱讀背面之注意事項再填寫本頁) 5 543130 經濟部智慧財產局員工消費合作社印製 A7 9146pif.doc/〇〇° β7 ---------—_— _ 五、發明說明(]) 習知的打線工具和打線台的開發思路槪述如下。广 半導體所具有的IC、LSI等製品的種類繁多,在每個_㈡ 中用以連接的引線或接線數、半導體形狀並不相同。因^_ 需對每個1C、LSI製品準備專用的打線工具和打線台,因 而導致生成本增尚、設備上所安裝的打線工具和打線台的 更換需要時間以及打線工具和打線台的管理繁雜等問題。 爲解決迫種問邊’在日本專利特開平3-19丨538號公 報中,提出一種藉由螺絲等機械方式安裝打線工具的前端 部,以使前端部之拆裝變容易的方法。但是,由於使用螺 絲方式時,長時間使用會導致螺絲部燒損,而殘存有不能 拆裝前端部的問題。、 另外,在日本專利特開平8-107129號公報中,提出 一種對上述日本專利特開平3-191538號公報的改良,係 提出一種使用偏心軸的方式作爲機械安裝方法的打線工 具。在此方式中,不僅拆裝容易,.且即使在長時間使用之 情形下,前端部和柄部的固定部也沒有燒損之問題。然而, 由於最近之使用條件變得苛刻,反覆拆裝的冷熱週期,使 得作爲防止燒損的陶瓷塗層產生部分剝離。此結果,在攝 氏500度的高溫下,大約經過30萬次的打線後,前端部 和柄部之間發生燒損。且燒損之部分導致其他的前端部無 法更換。此對打線台而言,也有同樣之情形。 再者,於第8圖所示係爲習知之打線工具的前端部 中’係安裝有覆蓋金剛石的陶瓷突出部和金屬製的基體 部。然後,需對金剛石面進行硏磨,以展現出前端部上下 6 >紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) " ------r---1---------— It-------1 — . (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 543130 A7 9146pif.doc/008 B7 五、發明說明(邙) 、面的平行度,此時需花費硏磨時間。當前端部的底面和工 具面的平行度係爲工具面上所覆蓋的金剛石的膜厚以上的 情況下,由於不能調整,因此必須重新接合。當使用具有 底面和工具面的平行度不足的前端部的打線工具時,.釘線 裝置啓動時的平行度調整會有需要花費非常長之時間的問 題。 再者,在第8圖所示結構的打線工具中,由於陶瓷 製的突出部的熱膨脹率小於金屬製的基體部,因此,此兩 個構件在進行相互接合之際,接合界面上所產生的熱應力 係隨著突出部尺寸的變大而變大。由此,在使用之過程中, 會發生突出部從基體部的金屬剝離的問題。即便在未引起 剝離的情況下,也會在內應力的影響下,使前端部的底面 和工具面的平坦度發生改變,並於反覆進行安裝負荷之 際,在接合介面處蓄積熱應力,而殘留有割斷突出部的問 題。 打線工具和打線台之實際使用溫度和設計溫度通常 係爲不同的情況。第8圖所示結構的打線工具的工具面在 設計溫度下可藉由硏磨加工而成爲平坦的。但是,當在與 當初的設計溫度不同的溫度下使用時,由於前端部的金屬 製的基體部和陶瓷製突出部的熱膨脹率不同,因此,前端 部的平坦度會偏離設計値。因而,在整個工具面上進行均 勻接合變得困難,根據此情況發生不能接合的部分。此傾 向,尤其在前端部的突出部增大時,特別顯著。對最近的 狀況而言,1C或LSI的尺寸日益增大,因而導致打線工具 7 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮Γ ----^-------裝--------訂---------^9— (請先閱讀背面之注意事項再填寫本頁) 543130 A7 B7 9146pif.doc/008 五、發明說明(ο 和/或打線台的工具面的平坦度或使用時的溫度分佈等的 精確度難以保持在習知的水平。 ______1___*___· nL i — f請先閱讀背面之注意事項再填寫本頁} 再者,希望縮短工具的更換時間、延長壽命。爲縮 短更換時間,第一係爲沒有燒損,第二係爲縮短打線工具 和打線台的工具面彼此之間的平行度調整時間,因此,提 高前端部和/或台部的底面與工具面的精確度係非常重 要。對長壽命化而言,則儘量減小使用中的工具面的平坦 度變化以及前端部和/或台部沒有損壞係非常重要。 最近,僅更換前端部以對應多種製品的所謂的柄部 通用化的希望尤其增大。針對最近的這些多樣化的情況, 習知的製品無法對此加以對應。本發明提出一種對習知之 問題作出進一步改良的打線工具和打線台。 發明槪沭· 本發明提出一種打線工具,係爲由前端部和柄部所 構成的半導體安裝用的打線工具,其特徵在於:構成前端 部的基體邰和從基體部突出的突出部係由一體成形之材料 所構成,突出部的工具面係覆蓋有氣相合成金剛石,前端 郃和柄邰係使用機械固定或真空吸附固定。柄部係具有在 經濟部智慧財產局員工消費合作社印製 一疋k置和角度範圍內,將前端部固定到打線裝置中的安543130 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 9146pif.doc / 008 V. Description of the Invention (丨) Field of the Invention The present invention relates to bonding tools and / or bonding tools used when mounting semiconductor components such as 1C and LSI. The structure of the bonding stage. BACKGROUND OF THE INVENTION In order to extract the electrical characteristics of a semiconductor element, it is necessary to electrically connect an electrode formed on the semiconductor element, a lead of a package, and the lead to an external terminal of a wiring substrate. The joining of electrodes and leads on the side of a semiconductor element is known as a method in which a thin wire made of gold or copper is used as a lead, and a method called a capillary is used to connect the roots to the ground, which is called metal. The wire bonding method, or a lead called a fUm carrier by tinning a patterned copper foil, uses a wire bonding tool and a wire bonding table heated at a predetermined temperature in a semiconductor device. The method of uniformly connecting all the leads on all the electrodes on the part is called a method called Tape Automated Bonding (TAB): The threading tool and the threading table mentioned here are installed in pairs on the threading device. Generally speaking, on the tool surface of the threading table that is located below and the tool is facing upwards and fixed on the surface, it is virtually determined according to the specified accuracy. The positions of the semiconductor components, the lead portions of the package, the wiring substrate, etc. are then press-bonded with a wire-moving tool that can be moved downward with the tool side facing upward. By this joining method, a vacuum suction mechanism needs to be provided in the wire drawing tool or the wire drawing table. Furthermore, according to this joining method, the heating mechanism must be on one or both sides. Recently, in order to directly bond semiconductor elements to wiring formed on film or glass, wire bonding tools and wires heated to a specified temperature are required. 4 This paper size is in accordance with China National Standard (CNS) A4 (210 X 297). c Please read the notes on the back before filling in this page} I ϋ 1 n ^ WJ · ϋ ml am— line f · 543130 9146pif-doc / 008 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ,) Taiwan. On the other hand, 'leads are connected to the wiring board and the external terminals of the lead frame, and tinned leads or untinned leads are screen-printed using a wire tool and a wire table heated to a predetermined temperature. Electrodes or gold-plated leads formed on the wiring board are bonded to gold- or silver-plated lead frames. Recently, in a 1C chip, a lead frame is directly attached to a semiconductor element via an adhesive tape such as polyamide. Then, the electrode formed on the semiconductor element and the lead frame are bonded to each other via the aforementioned wire bonding method. In this case, when a lead frame is attached to a semiconductor element, a wire bonding tool and a wire bonding table heated to a predetermined temperature are used. The threading tool and the threading table used here are composed of a shank portion, a front end portion, a base portion, and a base portion. The handle and the pedestal are conventionally made of metal products made of molybdenum, cemented carbide, nickel-based alloy, tungsten or tungsten alloy, iron-nickel-cobalt alloy, stainless steel, iron-nickel alloy, titanium or titanium alloy. In order to improve the flatness, abrasion resistance, and temperature distribution of the tool surfaces of the front end and the table, the front end and the table are made of vapor-phase synthetic diamond, diamond single crystal, diamond sintered body, and cubic boron nitride sintered body. Hard materials such as these are used by being attached to the metal tip. The heating of the threading tool and / or the threading table is performed after the thermal block inserted into the cassette heater is mounted on the handle and / or the seat section. Furthermore, the cassette heater of the electric heating mechanism assembled on the substrate such as AIN and SiC is inserted between the front end portion and the shank portion and / or the stage portion and the seat portion, and then mechanically or by vacuum adsorption, etc. Fixed for action. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 ------ L 丨 丨 -1 丨 丨 — • 丨-! 丨 —— 丨 · 丨 --—— 丨 丨 丨-· (please first Read the notes on the back and fill in this page) 5 543130 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 9146pif.doc / 〇〇 ° β7 ---------—_— _ V. Description of the invention (] ) The development ideas of the conventional wire bonding tools and wire bonding stations are described below. There are many types of ICs, LSIs, and other products that Guang Semiconductor has. The number of leads or wires used to connect and the shape of the semiconductor in each _㈡ are not the same. ^ _ It is necessary to prepare dedicated wire bonding tools and wire bonding stations for each 1C and LSI product, which results in cost increase, replacement of wire bonding tools and wire bonding stations installed on the device requires time, and management of wire bonding tools and wire bonding stations. In order to solve such problems, Japanese Patent Application Laid-Open No. 3-19 丨 538 proposes a method for mounting a front end portion of a wire-bonding tool by a mechanical method such as a screw so as to facilitate the removal and assembly of the front end portion. Method. However, since the screw method is used for a long time, The use may cause the screw portion to burn out, leaving a problem that the front end portion cannot be removed. In addition, in Japanese Patent Laid-Open No. 8-107129, an improvement to the Japanese Patent Laid-open No. 3-115538 is proposed. A method of using an eccentric shaft as a threading tool for a mechanical installation method is proposed. In this method, not only is easy to disassemble, but also the fixed part of the front end and the handle does not burn even under long-term use. Problem. However, due to the recent severe conditions of use, repeated hot and cold cycles of disassembly have caused partial peeling of the ceramic coating as a protection against burnout. As a result, at a high temperature of 500 degrees Celsius, about 300,000 times After the wire is burned, burnt occurs between the front end and the handle. And the burned part makes the other front end unable to be replaced. This is also the same for the wire bonding station. Moreover, as shown in FIG. The tip of the conventional wire bonding tool is a ceramic protruding part and a metal base part which are covered with diamond. Then, the diamond surface needs to be honed to show End up and down 6 > Paper size applies Chinese National Standard (CNS) A4 specification (21〇x 297 mm) " ------ r --- 1 ---------— It- ------ 1 —. (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 543130 A7 9146pif.doc / 008 B7 V. Description of the invention (邙) The parallelism requires honing time. If the parallelism between the bottom surface of the current end and the tool surface is greater than the film thickness of the diamond covered on the tool surface, it cannot be adjusted and must be rejoined. When a threading tool having a front end portion with insufficient parallelism between the bottom surface and the tool surface is used, the parallelism adjustment at the time of starting the stapling device may take a very long time. Furthermore, in the wire bonding tool having the structure shown in FIG. 8, the thermal expansion coefficient of the protruding portion made of ceramic is smaller than that of the base portion made of metal. Therefore, when the two members are bonded to each other, The thermal stress becomes larger as the size of the protruding portion becomes larger. Therefore, during use, there is a problem that the protruding portion is peeled off from the metal of the base portion. Even if peeling does not occur, the flatness of the bottom surface of the tip portion and the tool surface is changed under the influence of internal stress, and when the mounting load is repeatedly applied, thermal stress is accumulated at the joint interface, and The problem of cutting off the protrusion remains. The actual operating temperature and design temperature of the wire bonding tool and wire bonding station are usually different. The tool surface of the wire tool of the structure shown in FIG. 8 can be made flat by honing at the design temperature. However, when used at a temperature different from the original design temperature, the thermal expansion coefficients of the metal base portion and the ceramic protrusion portion of the tip portion are different, so that the flatness of the tip portion deviates from the design. Therefore, it becomes difficult to perform uniform joining over the entire tool surface, and in this case, a portion that cannot be joined occurs. This inclination is particularly remarkable when the protrusion at the front end portion is increased. To the recent situation, the size of 1C or LSI is increasing day by day, which has led to wire bonding tools. 7 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). ---- ^ ----- --Installation -------- Order --------- ^ 9— (Please read the notes on the back before filling in this page) 543130 A7 B7 9146pif.doc / 008 5. Description of the invention ( ο It is difficult to maintain the accuracy of the flatness of the tool surface of the threading table or the accuracy of the temperature distribution during use at a known level. ______ 1 ___ * ___ · nL i — f Please read the precautions on the back before filling in this page} In addition, I want to shorten the tool replacement time and extend the life. In order to shorten the replacement time, the first series has no burnout, and the second series shortens the parallelism adjustment time between the tool surfaces of the wire tool and the wire table. It is very important to improve the accuracy of the bottom surface and / or the tool surface of the front end and / or the table. For long life, minimize the change in the flatness of the tool surface in use and the front end and / or the table are not damaged. The system is very important. Recently, only the front end has been replaced with a so-called handle for various products. The hope for generalization is particularly high. In response to these recent diversified situations, conventional products cannot cope with this. The present invention proposes a wire bonding tool and a wire table that further improve the conventional problems. Invention 槪 沭 · 本The invention provides a wire bonding tool, which is a wire bonding tool for semiconductor mounting, which is composed of a front end portion and a shank portion, and is characterized in that the base body 构成 constituting the front end portion and the protruding portion protruding from the base portion are composed of an integrally formed material The tool surface of the protruding part is covered with vapor-phase synthetic diamond, and the front end 郃 and handle 机械 are fixed by mechanical fixing or vacuum suction. The handle has a range of angles and angles printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. To secure the front end to the wire

裝機構。同時,也具有將前端部加熱到打線製程所需溫庐 爲止的結構。 X 、本發明另提出一種打線台,係爲由台部和台座部所 構成的半導體安裝用的打線台,其特徵在於:構成台 基體部和從基體部突出的突出部係由一體成形之材料所構 表紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 8 543130 五 A7 B7 經濟部智慧財產局員工消費合作社印製 9l46pif.doc/008 發明說明(6) 成,突出部的工具面係覆蓋有氣相合成金剛石,台部和台 座部係使用機械固定或真空吸附固定。台座部係具有在〜 定位置和角度範圍內,將台部固定到打線裝置中的安裝機 構。同時,也具有將台部加熱到打線製程所需溫度爲止的 結構。 一般而言,在打線裝置中,打線工具和打線台係成 對使用。本發明的打線工具可與習知的打線台組合使用, 或與本發明的打線台組合使用。更甚之,本發明的打線台 可與習知的打線工具組合使用。 本發明的打線工具和/或打線台,其前端部和/或台部 係由以選自於Sic、Si3N4、A1N等所組成之族群之一爲主 成分的燒結體所構成,且利用氣相合成法覆蓋有結晶金剛 石。 再者,前述柄部和/或台座部是從鉬、超硬合金、鎳 基合金、鎖或鶴合金、鐵錬銘合金、不鏡鋼、鐵錬合金、 鈦或鈦合金選擇的一種或2種以上金屬所構成的。其中, 鐵鎳鈷合金或含鎢合金的鎢銅合金在耐熱性和加工性方面 較爲優越。 本發明的前端部和/或台部,包括構成前端部的基體 部和從基體部突出的突出部係由一^體成形之材料所構成, 突出部的工具面係由氣相合成金剛石覆蓋層所構成,一體 成形之材料以選自於SiC、Si3N4、A1N等所組成之族群之 一爲主成分的燒結體所構成。 打線工具和/或打線台的前端部和/或台部的底面與工 9 ------ί----— 丨丨裝!----訂---------· f請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 五、發明說明(9 ) 具面的平行度在常溫下爲2微米以下。 (請先閱讀背面之注意事項再填寫本頁) 從側面側對該柄部的安裝部進行觀察時,更包括安 裝側面,此安裝側面具有朝向工具面之邊長或直徑減小的 梯形形狀的截面形狀。根據此結構,由於安裝部的側面的 斜面與丨女壓邰之間所具有之楔形效果,可提高接合強度。 藉由改變斜面的傾斜度等,即可確認前端部的方向性。 本發明得到的打線工具用前端部和/或打線台用台部 的特徵在於在100°c到550°c之間,前端部的平坦度變化 在1微米以下或爲任意値,但前端部上可具有用以吸附半 導體兀件的一個以上的真空吸附孔。前端部和/或台部上 具有用以吸附半導體的真空吸附槽和一個以上的真空吸附 孔。 經濟部智慧財產局員工消費合作社印製 本發明的前端部和/或台部中,柄部和/或台座部的接 觸面的面粗糙度較佳之平面表面粗糙度Ra係爲〇.1微米 以下。這是用以保證柄部和/或台座部與前端部之間的熱 傳導。前端部和柄部或台部與台座部之間插入從金、銀、 銅、鉛、鉅、鎳、鋁等軟質金屬選擇的1層或2層以上的 金屬來使用。尤其前端部上下面的平行度高時,調整平行 度變得容易,並且可提高與柄部之間的密合性,提高熱傳 導。 爲讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳 細說明如下: 圖式之簡單說明 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130装 机构。 Loading mechanism. At the same time, it also has a structure that heats the front end to the temperature required for the wire bonding process. X. The present invention also proposes a wire bonding table, which is a wire bonding table for semiconductor mounting composed of a base portion and a base portion, which is characterized in that the base portion of the base and the protruding portion protruding from the base portion are made of an integrally formed material. The paper size of the constructed table is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 8 543130 five A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 9l46pif.doc / 008) Description of the invention (6), the tool face of the protruding part The system is covered with vapor-phase synthetic diamond, and the platform and the platform are fixed by mechanical fixing or vacuum suction. The platform has a mounting mechanism that fixes the platform to the wire drawing device within a predetermined position and angle range. At the same time, It has a structure that heats the table part to the temperature required for the wire making process. Generally, in the wire making device, the wire making tool and the wire making table are used in pairs. The wire making tool of the present invention can be used in combination with a conventional wire making table, or It is used in combination with the wire bonding station of the present invention. Furthermore, the wire bonding station of the present invention can be used in combination with a conventional wire bonding tool. The wire bonding tool and / or the wire bonding station of the present invention The front part and / or the part of the wire table is composed of a sintered body mainly composed of one group selected from Sic, Si3N4, A1N, etc., and is covered with crystalline diamond by a gas phase synthesis method. The handle and / or the base part is one or two kinds selected from molybdenum, cemented carbide, nickel-based alloy, lock or crane alloy, iron alloy, stainless steel, iron alloy, titanium, or titanium alloy. It is made of the above metals. Among them, iron-nickel-cobalt alloy or tungsten-copper alloy containing tungsten is superior in heat resistance and workability. The tip portion and / or the stage portion of the present invention include a base portion and a base portion constituting the tip portion and The protruding portion protruding from the base portion is composed of a single body formed material, the tool surface of the protruding portion is composed of a vapor-phase synthetic diamond covering layer, and the integrally formed material is composed of SiC, Si3N4, A1N, etc. One of the ethnic groups is composed of a sintered body having a main component. The front end of the wire tool and / or the wire table and / or the bottom surface of the wire section and the work 9 ------ ί ------ 丨 丨 installed!- --- Order --------- · f Please read the notes on the back before filling this page) Zhang applicable China National Standard Scale (CNS) A4 size (210 X 297 mm) 543 130 V. invention is described in (9) having a surface parallelism at ordinary temperature below 2 microns. (Please read the precautions on the back before filling in this page.) When viewing the mounting part of the handle from the side, the mounting side is also included. This mounting side has a trapezoidal shape with a side length or a reduced diameter facing the tool surface. Cross-sectional shape. According to this structure, due to the wedge-shaped effect between the inclined surface of the side surface of the mounting portion and the female pressure pin, the joint strength can be improved. By changing the inclination of the inclined surface, etc., the directivity of the tip portion can be confirmed. The front end portion of the wire-bonding tool and / or the wire-mounting base portion obtained by the present invention is characterized in that the flatness of the front end portion varies between 1 micrometer or less and 100 ° c to 550 ° c. There may be more than one vacuum suction hole to suck the semiconductor element. The front end portion and / or the stage portion are provided with a vacuum suction groove for sucking a semiconductor and one or more vacuum suction holes. In the front end portion and / or the platform portion of the present invention, which is printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the surface roughness Ra of the contact surface of the handle portion and / or the base portion is preferably less than 0.1 micron. . This is to ensure heat conduction between the shank portion and / or the pedestal portion and the front end portion. One or two or more layers of metal selected from soft metals such as gold, silver, copper, lead, giant, nickel, and aluminum are inserted between the tip portion, the shank portion, or the pedestal portion and the pedestal portion. In particular, when the parallelism of the top and bottom surfaces of the front end portion is high, it becomes easy to adjust the parallelism, and the adhesion with the shank portion can be improved, and the heat conduction can be improved. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in conjunction with the accompanying drawings, and are described in detail as follows: Brief description of the drawings This paper scale applies to China National Standard (CNS) A4 Specification (210 X 297 mm) 543130

A7 9146pif.doc/〇〇QA7 9146pif.doc / 〇〇Q

五、發明說明(父) 第1圖所示係爲本發明的打線工具的前端部的一實 例的斜視圖。 經濟部智慧財產局員Η消費合作社印製 第2圖所示係爲本發明的打線工具將前端部固定在 柄部的斜視圖。 第3圖所示係爲本發明的打線台前端部的一實例的 斜視圖。 第4圖所示係爲本發明的打線台將台部固定在台座 部的斜視圖。 第5圖所示係爲本發明的將前端部安裝在柄部的結 構的局部截面圖。 第6A圖至第6B圖所示係爲說明傳遞本發明的偏心 軸之動作的運動構件的動作圖。 第7圖所示係爲本發明得到的打線工具與習知打線 工具的平坦度的比較圖。 第8圖所示係爲習知的打線工具之前端部和柄部處 於固定的狀態的示意圖。 圖式之標記說曰 1 : 1 :前端部 2 :安裝側面 3 :基體部 4 :突出部 5 ··金剛石覆蓋層(工具面) 6 :真空吸附孔 1〇 :卡座加熱器容納部 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------i----_---裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 543130 A7 B7 9146pif.doc/008 五、發明說明(q) 11 :安裝部 12 :按壓部 (請先閱讀背面之注意事項再填寫本頁) 14 :柄部 15 :偏心軸 16 :傳遞偏心軸動作的構件 17 :偏心軸的支撐軸 18 :構件16的支撐軸 19 :熱電偶容納部 20 :焊接面 1〇1 :台部 102 :安裝側面 103 :基體部 104 :突出部 105 :金剛石覆蓋層(工具面) 106 :真空吸附孔 110 :卡座加熱器容納部 111 :安裝部 經濟部智慧財產局員工消費合作社印製 112 :按壓部 114 :台座部 Π6 :傳遞偏心軸動作的構件 119 :熱電偶容納部 較佳實施例之詳細說明 打線工具和打線台的進步很快,係與1C或LSI同樣 屬於壽命週期短的工具。並且,其使用方法也如下所述, 12 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 A7 B7 9146pif. doc./008 五、發明說明(π ) 即便是相同的打線工具,與習知相比,維持2到3倍的壽 命。另外,隨著1C或LSI快速增大,因而工具的尺寸精 確度等未得到緩和。而且,從攝氏100度到數百度的高溫 下,要求平坦度在1微米以內的尺寸精確度以及沒有燒損。 針對來自這類市場的要求,首先從下面的各種材料 選擇確認前端部和/或台部與柄部和/或台座部的材料彼此 間爲不反應的組合。亦即,討論超硬合金或鉬、鎳基合金、 鎢、鎢合金、鐵鎳鈷合金、不銹鋼、鐵鎳合金、鈦或欽合 金等的金屬與Sic、Si3N4、A1N等的陶瓷的各種組合。 從其結果可知,柄部和台座部由於具有熱電偶容納 部、卡座加熱器容納部,不作成複雜形狀,又在考慮其形 狀時,金屬是比較經濟的。 這樣,使用於前端部和/或台部的基體部的材料較佳 是SiC、Si3N4、A1N等的陶瓷。除此之外的材料在使用時, 柄部的金屬會稍損,且於長時間使用後,將其取出需要很 長時間。 僅從防止燒損之目的考慮時,第1圖和第3圖的基 體部3、103爲SiC、Si3N4、A1N等的陶瓷時,第2圖的 柄部14和第4圖的台座部114較佳係爲陶瓷。當柄部ι4 和台座部Π4爲陶瓷時,將硬陶瓷加工成複雜形狀在成本 方面非常不利,尤其在基體部爲SiC、Si3N4、A1N等的陶 瓷所構成時。 當基體部3、103爲陶瓷,且覆蓋有金剛石的突出部 也同樣爲陶瓷之際’突出部與基體部較佳係爲沒有焊接線 13 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----1--------------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 543130 A7 B7 9146pif,doc/〇〇8 五、發明說明(u) 的一體結構。本發明係於突出前端部上直接覆蓋多晶金剛 石而成爲沒有金屬焊接痕跡的結構。因此,除不發生燒損 之外,也減少了與金屬的熱膨脹率差而減少割斷、使用中 的平坦度變化、因溫度而產生的平坦度變化等,進而改善 了工具面溫度分佈。另外,不需在焊接後,進行前端部平 行度調整硏磨加工,進一步提高精確度和提高經濟性。因 此,本發明中,前端部和/或台部係爲在工具面上覆蓋有 多晶金剛石的陶瓷一體成型結構,且對安裝柄部和/或台 座部上的方法而言,係以機械固定的方法或真空吸附。當 機械固定時,打線製程中的前端部較不會發生偏差,而可 進行高精確度的打線。當使用真空吸附固定時,則前端部 之更換谷易’且容易進彳了打線製品的尺寸的變更。而且, 突出部的形狀可根據所進行之打線製品的形狀、大小而任 意設計,除了本發明的實例1、3所示的矩形的形狀之外, 也可採用圓筒形狀等。 對機械的固定方法而言,可使用下面的圖式進行說 明。本發明的打線工具較佳是將第1圖的前端部安裝於第 2圖的結構。在第1圖中,符號i是前端部、符號2是安 裝側面、符號3是基體部、符號4是突出部、符號5是金 剛石覆蓋層(工具面)。另外,在第1圖中,對打線工具 前端部的實例而言,基體部係爲矩形之形狀◦或者,也可 以如第3圖所示將基體部變更爲圓形或具有曲面的形狀。 在第2圖中,符號14是柄部、符號16是傳遞偏心軸動作 的運動的構件、符號12是按壓部、符號19是熱電偶容納 14 >紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----1---:----------—訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 543130 A7 B7 9146pif.doc/008 五、發明說明(v^) (請先閱讀背面之注意事項再填寫本頁) 部、符號1 〇是卡座加熱器容納部。再者,本發明的打線 台較佳是將第3圖的台部安裝於第4圖的結構。在第3圖 中,符號101是台部、符號102是安裝側面、符號103是 基體部、符號104是突出部、符號105是金剛石覆蓋層(工 具面)。另外,在第3圖中,作爲打線台前端部的實例雖 以基體部爲圓形爲例進行說明,然而基體部也可以爲如第 1圖所示之矩形或具有圓形以外的曲面的形狀。在第4圖 中’符號114是台座部、付號116是傳遞偏心軸動作的運 動構件、符號112是按壓部、符號119是熱電偶容納部、 符號110是卡座加熱器容納部。 在第2圖及第4圖中,沿著箭頭方向按壓前端部和/ 或台部時,可藉由按壓部使前端部和/或台部與柄部和/或 台座部的底面緊密接觸,以保證柄部和/或台座部與前端 部和/或台部之間的熱傳導。此打線工具和打線台係藉由 柄部14和台座部II4的安裝部11以及111而安裝於打線 裝置上。 經濟部智慧財產局員工消費合作社印製 第5圖所示係爲以打線工具爲例之將前端部固定於 柄部和/或台座部時的安裝部的結構的局部截面圖。在打 線台的情況下,則爲將下面的前端部變更爲台部、柄部變 更爲台座部之後的相同的結構。前端部對柄部的固定結構 係藉由用以傳遞安裝於柄部14的偏心軸15的動作的構件 16,而機械固定於柄部14上。此時,用以傳遞偏心軸15 的動作的構件16係圍繞著構件的支撐軸18而旋轉。 如第5圖所示,前端部1係藉由用以傳遞偏心軸動 15 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 A7 B7 9146pif.doc/008 五、發明說明(Π ) 作的構件16,而由偏心軸15押向柄部。然後,於柄部μ 的熱電偶容納部19和卡座加熱器容納部1〇上分別安裝熱 電偶和卡座加熱器使用。此時,前端部係藉由按壓部12 和用以傳遞偏心軸動作的構件I6,而安裝於柄部。前端部 的女裝側面較佳係爲楔形。爲的是使之與柄部之間具有良 好的接觸。再者,用以傳遞偏心軸動作的構件16及接觸 則端邰的邰分較佳係爲與按壓部具有相同的結構。 第6A圖至第6B圖所示係爲第2圖到第4圖所示的 打線工具和打線台的固定結構的詳細結構。如第6A圖所 示,偏心軸15係以其支撐軸17爲中心進行旋轉,用以傳 遞偏心軸動作的構件16係押著偏心軸15,並以指示軸;[8 爲中心進行旋轉。如此,藉由此構件16而將工具前端部i 押向柄部14並固定之。因此,在基體部的側面圖中,至 少女裝側面爲斜面,也可以爲梯形形狀。當然,二方的安 裝側面之任一方皆可爲斜面。再者,如第6B圖所示,若 反向旋轉偏心軸I5,則構件16會從前端部脫離,即可取 出前端部1。 本發明在打線工具和打線台之突出部的最大長度超 出15mm時,尤其是超出20mm時,所表現的效果特別大。 因爲,當最大長度變大時,不需其他用以消除前端部和/ 或台部的突出部與基體部的熱膨脹不同的裝置。更甚之, 在本發明中,前端部和/或台部的底面,亦即,與柄部和/ 或台座部相接觸的部分的表面粗糙度越小越好。當底面的 表面粗糙度較佳之平均表面粗糙度Ra係 0.1微米以下, 16 本紙張尺度剌中國國家標準(CNS)A4規格(210 X 297公爱) -----1---.------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 43 ο 914 6pif.doc/〇08 A7 B7 五 發明說明(β) 貝丙部和/或台座部與前端部和/或台部之間的熱傳導程 度,不會在實際使用中發生問題。 在本發明中’前端部和/或台部的基體部的底面和工 具面的平行度較佳係爲2微米以下。當前端部和/或台部 的覆蓋金剛石之前的底面與工具面的平行度設在5微米以 下時,比較容易達成前述目標。當超出5微米時’覆蓋金 剛石之後,對比陶瓷更難加工的金剛石進彳了加工’使之平 行度成爲2微米以下的加工費過高。提高覆蓋金剛石之前 的前端部和/或台部的精確度的效果’除了上述之外’尙 可使覆蓋之金剛石層變薄。另外’縮短覆蓋金剛石之時間 之效果,一般而言,縮短覆蓋金剛石之時間’即可使合成 後的金剛石粒徑變小且平滑,因此可更進一步地縮短硏磨 時間。由於合成時間變長之際,粒子會隨之成長。針對此 點,以習知的焊接型式所形成之物品,其焊接後之平行度 的臨界値係爲11微米左右。 本發明的另外的特徵是覆蓋的金剛石層較薄’且作 用部分的整個面上之金剛石的厚度均勻。其厚度範圍最高 僅需7微米。而且,基體部的底面與工具面的平行度的測 定係藉由配置於定盤上的前端部和/或台部,並使觸針在 金剛石層上掃描而測定。 以下,藉由實例對本發明進行更詳細的說明。 實例1 首先,從36mmx36mmxllmm的SiC塊,加工成第1 Η所示:之形狀,亦即形成基體部下面爲 35 mm><35mm、突 -----1---!--------I---訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 Μ張尺度適財(eNs)A4 規格(210 X 297公釐) 543130 A7 B7 9146pif.doc/008 五、發明說明(κ ) 出部寬度爲5.4mmx30.4mm且高度爲6mm、整體高度爲 (請先閱讀背面之注意事項再填寫本頁) 1 Omm的則ί而部。在直徑6mm、涂度2.5mm的空穴中,分 別形成3個貫穿孔,此貫穿孔係爲從突出部的工具面側之 孔徑爲〇.5mm、孔深〇.5mm且從底面側之孔徑爲丨·8mm、 深爲7mm的真空吸附孔。對真空吸附半導體等情形而言, 可一邊移動、一邊打線。再者,工具面邊緣係依據寬〇.2mm 且角度爲45度之方式對各棱線實施面安裝加工,突出部 的有效尺寸係加工成5mmX30mm。 對細絲(filament)而言,藉由使用直徑〇.5mm、長 100mm的鎢絲的公知的細絲化學氣相沈積法,於上述前端 部的工具面上,覆蓋厚50微米的多晶金剛石。覆蓋條件 如下所示。 原料氣體(流量):ch4/h2=i% 總流量:500CC/min 氣壓:lOOOOPa5. Description of the Invention (Father) Fig. 1 is a perspective view showing an example of a front end portion of a wire tool of the present invention. Printed by a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and a Consumer Cooperative. Figure 2 is an oblique view of the threading tool of the present invention with the front end fixed to the handle. Fig. 3 is a perspective view showing an example of a front end portion of a wire bonding station of the present invention. Fig. 4 is a perspective view of a wire-clamping station according to the present invention in which the base portion is fixed to the base portion. Fig. 5 is a partial cross-sectional view showing a structure in which a tip portion is attached to a shank portion of the present invention. 6A to 6B are operation diagrams illustrating a moving member that transmits the operation of the eccentric shaft of the present invention. Fig. 7 shows a comparison of the flatness between the wire bonding tool obtained in the present invention and the conventional wire bonding tool. Fig. 8 is a schematic view showing a state in which the front end and the shank of the conventional threading tool are fixed. The designation of the drawing is as follows: 1: 1: front end 2: mounting side 3: base body 4: protrusion 5 • diamond cover (tool surface) 6: vacuum suction hole 10: cassette heater housing section paper Standards apply to China National Standard (CNS) A4 specifications (210 X 297 mm) ------ i ----_--- installation -------- order -------- -(Please read the precautions on the back before filling this page) 543130 A7 B7 9146pif.doc / 008 V. Description of the invention (q) 11: Mounting section 12: Pressing section (Please read the precautions on the back before filling out this page) 14: shank 15: eccentric shaft 16: member for transmitting eccentric shaft movement 17: eccentric shaft support shaft 18: support shaft of member 16 19: thermocouple receiving section 20: welding surface 101: table 102: mounting side 103: Base part 104: Protruded part 105: Diamond coating (tool surface) 106: Vacuum suction hole 110: Cassette heater housing 111: Mounting part Printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 112: Pressing part 114: Pedestal part Π6: A member for transmitting the movement of the eccentric shaft 119: Detailed description of the preferred embodiment of the thermocouple receiving part 1C or LSI system and the short life cycle belonging to the same tool. In addition, its use method is also described below. 12 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 543130 A7 B7 9146pif. Doc./008 5. The invention description (π) is the same The wire bonding tool maintains a lifespan of 2 to 3 times compared to the conventional one. In addition, with the rapid increase of 1C or LSI, the dimensional accuracy and the like of tools have not been eased. In addition, at high temperatures from 100 to hundreds of degrees, dimensional accuracy within 1 micron of flatness and no burnout are required. In response to the requirements from such markets, the materials of the front end portion and / or the stage portion and the shank portion and / or the seat portion are first selected from various materials below to confirm that they do not react with each other. That is, various combinations of metals such as super-hard alloys or molybdenum, nickel-based alloys, tungsten, tungsten alloys, iron-nickel-cobalt alloys, stainless steels, iron-nickel alloys, titanium, or alloys, and ceramics such as Sic, Si3N4, and A1N are discussed. It can be seen from the results that the shank portion and the pedestal portion do not have a complicated shape due to the thermocouple accommodating portion and the cassette heater accommodating portion. When considering the shape, metal is more economical. As described above, the material of the base portion used for the tip portion and / or the stage portion is preferably a ceramic such as SiC, Si3N4, A1N, or the like. When using other materials, the metal of the handle will be slightly damaged, and it will take a long time to remove it after long-term use. When considering only the purpose of preventing burnout, when the base portions 3 and 103 of Figs. 1 and 3 are ceramics such as SiC, Si3N4, and A1N, the shank portion 14 of Fig. 2 and the base portion 114 of Fig. 4 The best is ceramic. When the handle ι4 and the pedestal Π4 are made of ceramics, processing hard ceramics into complex shapes is very disadvantageous in terms of cost, especially when the base is made of SiC, Si3N4, A1N, or other ceramics. When the base part 3 and 103 are ceramic and the protruding part covered with diamond is also ceramic, the protruding part and the base part preferably have no welding line. 13 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- 1 --------------- (Please read the notes on the back before filling out this page) Printed by the Employees' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 543130 A7 B7 9146pif, doc / 〇008 V. Integrated structure of invention description (u). The invention is a structure in which the protruding front end portion is directly covered with polycrystalline diamond and has no metal welding mark. Therefore, in addition to non-burnout, it also reduces the difference in thermal expansion coefficient with metal and reduces cutting, flatness change during use, and flatness change due to temperature, etc., thereby improving the tool surface temperature distribution. In addition, it is not necessary to perform honing adjustment of the parallelism of the front end portion after welding, thereby further improving accuracy and economic efficiency. Therefore, in the present invention, the front end portion and / or the table portion are a ceramic monolithic structure covered with polycrystalline diamond on the tool surface, and the method of mounting the shank portion and / or the table portion is mechanically fixed. Method or vacuum adsorption. When the machine is fixed, the front end of the wire making process is less likely to deviate, and high precision wire making can be performed. When the vacuum suction is used for fixing, the replacement of the tip part is easy and the size of the threaded product is easily changed. In addition, the shape of the protruding portion can be arbitrarily designed according to the shape and size of the threaded product to be carried out. In addition to the rectangular shape shown in Examples 1 and 3 of the present invention, a cylindrical shape can also be used. The mechanical fixing method can be explained using the following diagram. The wire bonding tool of the present invention preferably has a structure in which the front end portion of Fig. 1 is attached to Fig. 2. In the first figure, reference numeral i is a front end portion, reference numeral 2 is a mounting side surface, reference numeral 3 is a base portion, reference numeral 4 is a protruding portion, and reference numeral 5 is a diamond covering layer (tool surface). In the first figure, for the example of the front end of the wire tool, the base portion has a rectangular shape. Alternatively, the base portion may be changed to a circular shape or a curved shape as shown in FIG. 3. In the second figure, reference numeral 14 is a handle, reference numeral 16 is a member that transmits the movement of the eccentric shaft motion, reference numeral 12 is a pressing part, and reference numeral 19 is a thermocouple housing 14 > The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- 1 ---: ------------ order --------- line (please read the precautions on the back before filling in this Page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 543130 A7 B7 9146pif.doc / 008 V. Description of Invention (v ^) (Please read the precautions on the back before filling this page) Department, symbol 1 〇 is the heating of the deck Container holder. In addition, the wire bonding station of the present invention preferably has a structure in which the table portion of Fig. 3 is attached to Fig. 4. In Fig. 3, reference numeral 101 is a table portion, reference numeral 102 is a mounting side surface, reference numeral 103 is a base portion, reference numeral 104 is a protruding portion, and reference numeral 105 is a diamond coating layer (tool surface). In addition, in FIG. 3, although the front end portion of the wire table is taken as an example to describe the base portion as a circle, the base portion may be rectangular as shown in FIG. 1 or a shape having a curved surface other than a circle. . In Fig. 4, the reference numeral 114 is a pedestal portion, the reference numeral 116 is a moving member that transmits the movement of the eccentric shaft, the numeral 112 is a pressing portion, the numeral 119 is a thermocouple housing portion, and the numeral 110 is a cassette heater housing portion. In Figs. 2 and 4, when the front end portion and / or the table portion are pressed in the direction of the arrow, the front end portion and / or the table portion can be brought into close contact with the bottom surface of the shank portion and / or the base portion by the pressing portion. In order to ensure the heat conduction between the shank portion and / or the pedestal portion and the front end portion and / or the pedestal portion. The threading tool and the threading table are mounted on the threading device via the handle portion 14 and the mounting portions 11 and 111 of the base portion II4. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 5 is a partial cross-sectional view showing the structure of the mounting portion when the front end portion is fixed to the handle portion and / or the pedestal portion using a wire bonding tool as an example. In the case of a threading table, the same structure is obtained by changing the lower end portion to the table portion and the handle portion to the seat portion. The fixing structure of the front end portion to the shank portion is mechanically fixed to the shank portion 14 by a member 16 for transmitting the movement of the eccentric shaft 15 mounted on the shank portion 14. At this time, the member 16 for transmitting the movement of the eccentric shaft 15 is rotated around the support shaft 18 of the member. As shown in Figure 5, the front end 1 is used to transmit the eccentric shaft movement. 15 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) 543130 A7 B7 9146pif.doc / 008 V. Invention Explanation (Π) is made of the component 16, and the eccentric shaft 15 is pushed toward the handle. Then, a thermocouple and a cassette heater are respectively mounted on the thermocouple accommodating portion 19 and the cassette heater accommodating portion 10 of the handle portion μ for use. At this time, the front end portion is attached to the handle portion by the pressing portion 12 and the member I6 for transmitting the movement of the eccentric shaft. The front side of the women's clothing is preferably wedge-shaped. In order to make good contact with the handle. Furthermore, it is preferable that the members 16 for transmitting the movement of the eccentric shaft and the contact points of the end caps have the same structure as the pressing portion. 6A to 6B show detailed structures of the fixing structure of the wire bonding tool and the wire bonding table shown in FIGS. 2 to 4. As shown in Fig. 6A, the eccentric shaft 15 is rotated around its support shaft 17, and the member 16 for transmitting the movement of the eccentric shaft is held by the eccentric shaft 15 and rotated around the indicating shaft; [8 is rotated around the center. In this way, the tool tip portion i is pressed against the shank portion 14 by this member 16 and fixed. Therefore, in the side view of the base portion, the side of the girl's clothing is an inclined surface, and it may be trapezoidal. Of course, either side of the two mounting sides can be beveled. Further, as shown in Fig. 6B, if the eccentric shaft I5 is rotated in the reverse direction, the member 16 is detached from the front end portion, and the front end portion 1 can be taken out. When the maximum length of the protrusions of the wire-stretching tool and the wire-stretching table exceeds 15 mm, and particularly exceeds 20 mm, the effect exhibited by the invention is particularly great. This is because, when the maximum length becomes large, other means for eliminating thermal expansion between the protruding portion of the front end portion and / or the table portion and the base portion are not required. Furthermore, in the present invention, the smaller the surface roughness of the bottom surface of the front end portion and / or the table portion, that is, the portion in contact with the shank portion and / or the table portion, the better. When the surface roughness of the bottom surface is better, the average surface roughness Ra is less than 0.1 micron, 16 paper sizes 剌 Chinese National Standard (CNS) A4 specifications (210 X 297 public love) ----- 1 ---.-- ---------- Order --------- line (please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 43 ο 914 6pif.doc / 〇08 A7 B7 Fifth invention description (β) The degree of heat conduction between the berber part and / or the base part and the front end part and / or the base part will not cause problems in actual use. In the present invention, the parallelism between the bottom surface of the base portion of the 'front end portion and / or the table portion and the tool surface is preferably 2 m or less. When the parallelism between the bottom surface of the front end and / or the table before the diamond is covered and the tool surface is set to 5 micrometers or less, it is relatively easy to achieve the aforementioned goal. When the thickness exceeds 5 micrometers, diamonds that are more difficult to be processed than ceramics are processed after being coated with diamond, and the processing cost is too high to make the parallelism less than 2 micrometers. The effect of improving the accuracy of the front end portion and / or the stage portion before the diamond is covered, in addition to the above, can reduce the thickness of the covered diamond layer. In addition, the effect of "reducing the time for covering diamonds, in general, shortening the time for covering diamonds" can reduce the size and smoothness of the synthesized diamond particles, and therefore can further reduce the honing time. As the synthesis time becomes longer, the particles will grow with it. In view of this, the critical parallelism of an article formed by a conventional welding type after welding is about 11 microns. Another feature of the present invention is that the diamond layer covered is thinner 'and the thickness of the diamond on the entire surface of the active portion is uniform. Its thickness range is only 7 microns. The measurement of the parallelism between the bottom surface of the base portion and the tool surface is performed by scanning the stylus on the diamond layer by arranging the tip portion and / or the stage portion on the fixed plate. Hereinafter, the present invention will be described in more detail by way of examples. Example 1 First, a SiC block of 36mmx36mmxllmm was processed into the shape shown in the first figure (1), that is, the bottom of the base part was formed to be 35 mm > < 35mm, protrusion ----- 1 ---! ---- ---- I --- Order --------- line (please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs on the M-size scale (eNs) A4 specifications (210 X 297 mm) 543130 A7 B7 9146pif.doc / 008 5. Description of the invention (κ) The width of the outlet is 5.4mmx30.4mm and the height is 6mm. The overall height is (Please read the precautions on the back before filling (This page) 1 Omm is the Ministry. Three through holes are formed in the cavity having a diameter of 6 mm and a coating degree of 2.5 mm. The through holes are holes having a hole diameter of 0.5 mm from the tool surface side of the protrusion, a hole depth of 0.5 mm, and a hole diameter from the bottom surface side. It is a vacuum suction hole with a depth of 8mm and a depth of 7mm. In the case of vacuum suction semiconductors, etc., the wire can be moved while moving. In addition, the edge of the tool surface is subjected to surface mounting processing based on a width of 0.2 mm and an angle of 45 degrees, and the effective size of the protruding portion is processed to 5 mm × 30 mm. For the filament, a 50-micrometer-thick polycrystalline diamond is covered on the tool surface of the tip portion by a known filament chemical vapor deposition method using a tungsten filament having a diameter of 0.5 mm and a length of 100 mm. . The coverage conditions are shown below. Raw material gas (flow): ch4 / h2 = i% Total flow: 500CC / min Air pressure: 1000Pa

細絲溫度:2200°C 細絲和突出部覆蓋面之間的距離:5mm SiC溫度:攝氏920度 經濟部智慧財產局員工消費合作社印製 所得的金剛石覆蓋層5係以金剛石砂紙硏磨,以製 作突出部的有效尺寸爲5mmx30mm的前端部。在第2圖 所示之打線工具之前端部1之由鐵鎳鈷合金所形成的柄部 上,藉由夾桿固定於由相同材料所形成的偏心軸上。而且, 第2圖所示柄部係在真空吸附孔6之部位加工形成貫通孔 (圖中未標示)。此係在覆蓋之前,由於設置在突出部上 18 張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)_ 543130 A7 B7 14 6pif.doc/008 五、發明說明((u 的真空吸附孔並未覆蓋有金剛石,因此設置金剛石覆蓋層 後也應爲貫通孔。 同樣地,比較例係爲製作第8圖所示的習知結構的 打線工具◦突出部係於(長)6〇mmx (寬)60mmx (高) 3mm的SiC基板上覆蓋50微米的多晶金剛石之後,將之 切割成5.4mm><30.4mm的尺寸進行製作。基體部係藉由在 規定形狀之鐵鎳钻合金上進行機械加工而製得。之後,將 出部和基體部用銀焊劑接合而形成前端部。在此圖中, 符號20係指由覆蓋有多晶金剛石的SiC所構成的突出部 與由鈷所構成的基體部藉由焊劑接合所得之物。其他步驟 係以與本實例相同之方式製作比較例的樣品。 在藉此所得的打線工具中,對前端部的上下面平行 度、熱電偶部在溫度爲攝氏500度下的工具面表面溫度分 佈、加熱到500°C時之前端部和柄部的燒損試驗、從常溫 到600°C反覆加熱冷卻時的基體部和突出部的接合介面的 耐久性以及在600°C的溫度下施加20kg的負荷進行200萬 次的耐久性等進行比較。結果如表1所示。 -----1---.------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 9146pif.doc/008 五、發明說明(I)) A7 B7 測試內容 本發明 習知品 前端部上下面平 行度 1微米 11微米 工具面表面溫度 分佈 6°C 10°C 前端部燒損測試 沒有異常 30萬次後確認燒損 熱週期測試 沒有異常 24次後在突出部發生 割斷 600°C打線測試 沒有異常 120萬次後在前端部 發生割斷 測試條件之詳細敘述如下所示。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 工具面表面溫度分佈:熱電偶部的溫度爲500°C時的 工具面的最高、最低的溫度差。 前端部燒損測試:500°C、負荷20kg、100萬次打線 測試後,每1〇萬次取出前端部進行確認。 熱週期測試:從常溫加熱到600°C並保持2小時,之 後返回常溫的週期進行1〇〇次。 600°C打線測試:60(TC、加重20kg、200萬次打線 測試。 在習知品中,對基體部和突出部焊接後的前端部上 下面的平行度會惡化。需對其使用#170的金剛石砂紙傾斜 硏磨,並調整加工到平行度爲11微米爲止。由於需對平 行度調整進行傾斜硏磨,當硏磨到金剛石膜部分消失之 20 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印製 543130 A7 9146pif.doc/〇〇8 B7 五、發明說明(u) 際,則無法進行該値以上的調整。針對此點,在本發明中, 藉由直接朝突出部_蓋多晶金剛石而不需焊接的結構,因 此可在沒有焊接所發生的平行度惡化的情形下,達到平行 度爲1微米的精確度。由於在覆蓋金剛石之前的前端部上 下面的平坦度係爲5微米以下,因此可輕易達成上述覆蓋 後的精確度。本發明中,由於前端部沒有焊接部,因此, 在上述測試中,所有項目皆優於比較例。 實例2 首先,從0 32πΐπιχ11ιΏηι的SiC塊,加工成第3圖所 示之形狀,亦即形成基體部下面爲4 3 lmm、突出部寬度 爲5.4mmX3Ο·4ϊηπι且局度爲6mm、整體局度爲11 mm的台 部。在直徑6mm、深度2.5mm的空穴中,分別形成3個 貫穿孔,此貫穿孔係爲從突出部的工具面側之孔徑爲 0.5mm、孔深0.5mm且從底面側之孔徑爲1.8mm、深爲7mm 的真空吸附孔。對真空吸附半導體等情形而言,可一邊移 動、打線、固定。再者,工具面邊緣係依據寬〇.2mm且角 度爲45度之方式對各棱線實施面安裝加工,突出部的有 效尺寸係加工成5mmX30mm。 對細絲而言,藉由使用直徑〇.5mm、長100mm的鎢 絲的公知的細絲化學氣相沈積法,於SiC製的突出部上, 覆蓋厚50微米的多晶金剛石。覆蓋條件如下所示。 原料氣體(流量):CH4/H2=1% 總流量:500CC/min 氣壓:lOOOOPa 21 --------------------訂----------線 {請先閱讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公爱) 543130 il46pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明((1)Filament temperature: 2200 ° C The distance between the filament and the covering surface of the protrusion: 5mm SiC temperature: 920 ° C The diamond coating layer 5 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is honed with diamond sandpaper to produce The effective size of the protruding portion is a front end portion of 5mmx30mm. The shank formed of the iron-nickel-cobalt alloy at the front end 1 of the threading tool shown in FIG. 2 is fixed to an eccentric shaft formed of the same material by a clamp rod. In addition, the shank shown in FIG. 2 is processed to form a through hole (not shown) in the vacuum suction hole 6 portion. Before this series was covered, because the 18 scales set on the protrusions were in compliance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) _ 543130 A7 B7 14 6pif.doc / 008 V. Description of the invention ((u's vacuum The suction hole is not covered with diamond, so it should also be a through hole after the diamond coating is provided. Similarly, the comparative example is a wire bonding tool for making a conventional structure shown in FIG. 8. The protruding portion is (length) 6 °. mmx (width) 60mmx (height) 3mm SiC substrate is covered with 50 micron polycrystalline diamond, and then cut to a size of 5.4mm > < 30.4mm. The base is made of iron-nickel drill with a predetermined shape The alloy is made by machining. After that, the leading portion and the base portion are joined with silver solder to form a front end portion. In this figure, the symbol 20 refers to a protruding portion made of SiC covered with polycrystalline diamond and a portion made of SiC covered with polycrystalline diamond. The base body made of cobalt was joined by soldering. The other steps were to prepare a sample of the comparative example in the same manner as in this example. In the wire bonding tool thus obtained, the parallelism of the upper and lower surfaces of the front end portion, the thermocouple Part The temperature is the surface temperature distribution of the tool surface at 500 degrees Celsius, the burning test of the end and the shank before heating to 500 ° C, and the joint interface of the base and the protrusion when repeatedly heating and cooling from normal temperature to 600 ° C. The durability is compared with a durability of 2 million times when a load of 20 kg is applied at a temperature of 600 ° C. The results are shown in Table 1. ----- 1 ---.-------- ---- Order --------- line (please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economic Affairs This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 543130 9146pif.doc / 008 V. Description of the invention (I)) A7 B7 Test content The parallelism of the top and bottom of the front end of the conventional product of the present invention 1 micron 11 micron Tool surface surface temperature distribution 6 ° C 10 ° C Front end Part of the burnout test was 300,000 times without abnormality, and the thermal cycle test was confirmed to be abnormal. After 24 times, the protrusions were cut at 600 ° C. The wire test was not abnormal after 1.2 million times, and the test conditions were as follows. . (Please read the notes on the back before filling this page ) Printed tool surface temperature distribution at the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: the highest and lowest temperature difference of the tool surface when the temperature of the thermocouple department is 500 ° C. Burn-out test of the front end: 500 ° C, load 20kg After one million wire-bonding tests, take out the front end every 100,000 times for confirmation. Thermal cycle test: Heat from normal temperature to 600 ° C for 2 hours, and then return to normal temperature for 100 cycles. 600 ° C wire test: 60 (TC, 20kg weight increase, 2 million wire tests. In conventional products, the parallelism of the top and bottom of the front end after welding the base part and the protruding part will be deteriorated. Use # 170 of diamond for it Sandpaper is obliquely honed and adjusted to a parallelism of 11 microns. Due to the oblique honing of the parallelism adjustment, when the honing is completed to 20 parts of the diamond film, the paper size applies to Chinese National Standard (CNS) A4 specifications ( 210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 543130 A7 9146pif.doc / 〇〇8 B7 V. Description of Invention (u) In the case of this, the above adjustments cannot be made. In this regard, in this In the invention, since the structure is covered with polycrystalline diamond directly toward the protrusions without welding, it is possible to achieve an accuracy of 1 micron in parallel without deterioration in parallelism caused by welding. The flatness of the upper and lower surfaces of the front end portion is 5 micrometers or less, so the accuracy after the coverage can be easily achieved. In the present invention, since the front end portion does not have a welding portion, In the test described above, all items are better than the comparative example. Example 2 First, a SiC block of 0 32πΐπιχ11ιΏηι was processed into the shape shown in Fig. 3, that is, the bottom part of the base part was 4 3 lmm, and the width of the protruding part was 5.4mmX3〇 · 4ϊηπ, 6mm local area, 11mm overall area. In the cavity with a diameter of 6mm and a depth of 2.5mm, three through holes are formed. The through holes are from the tool surface side of the protrusion. A vacuum suction hole with a hole diameter of 0.5mm, a hole depth of 0.5mm, and a hole diameter of 1.8mm from the bottom surface side, and a depth of 7mm. For vacuum suction semiconductors, etc., it can be moved, wired, and fixed on one side. Furthermore, the edge of the tool surface Surface mounting is performed on each ridge line based on a width of 0.2 mm and an angle of 45 degrees. The effective size of the protrusion is 5 mm × 30 mm. For filaments, tungsten with a diameter of 0.5 mm and a length of 100 mm is used. The well-known filament chemical vapor deposition method of silk covers polycrystalline diamond with a thickness of 50 micrometers on a protrusion made of SiC. The covering conditions are as follows. Source gas (flow rate): CH4 / H2 = 1% Total flow rate: 500CC / min Pressure: lOOOOPa 21 --- ----------------- Order ---------- Line {Please read the notes on the back before filling out this page} This paper size applies Chinese national standards ( CNS) A4 specification (21〇X 297 public love) 543130 il46pif.doc / 008 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description ((1)

細絲溫度:2200°C 細絲和突出部覆盍面之間的距離:5 mmFilament temperature: 2200 ° C Distance between filament and overhang surface of protrusion: 5 mm

SiC溫度:攝氏920度 所得的金剛石覆蓋層5係以金剛石砂紙硏磨,以製 作突出部的有效尺寸爲5mmx30mm的台部。在第4圖所 示之打線工具之前端部1之由鐵鎳鈷合金所形成的柄部 上,藉由夾桿固定於由相同材料所形成的偏心軸上。而且, 第2圖所示台座部係在真空吸附孔6之部位加工形成貫通 孔(圖中未標示)。此係在覆蓋之前,由於設置在突出部 上的真空吸附孔並未覆蓋有金剛石,因此設置金剛石覆蓋 層後也應爲貫通孔。 同樣地,比較例係爲與第8圖所示之結構具有相同 的結構,製作習知結構的打線台。突出部係於(長)60mmx (寬)60mmx (高)3mm的SiC基板上覆蓋50微米的多 晶金剛石之後,將之切割成5.4mmx30.4mm的尺寸進行製 作。基體部係藉由在規定形狀之鐵鎳鈷合金上進行機械加 工而製得。之後,將突出部和基體部用銀焊劑接合而形成 前端部。 在藉此所得的打線台中,對台部的底面與工具面的 平行度、熱電偶部在溫度爲攝氏500度下的工具面表面溫 度分佈、加熱到50(TC時之台部和台座部的燒損試驗、從 常溫到600°C反覆加熱冷卻時的基體部和突出部的接合介 面的耐久性以及在600°C的溫度下施加20kg的負荷進行 200萬次的耐久性等進行比較。結果如表2所示。 22 ^紙張尺度適用中國國家標準(CNS)A4~規格(210 X 297公釐) ----J-----IIi-------------- (請先閱讀背面之注意事項再填寫本頁) 543130SiC temperature: 920 degrees Celsius The obtained diamond coating layer 5 was honed with diamond sandpaper to make a mesa portion having an effective size of 5 mm x 30 mm. The shank formed of the iron-nickel-cobalt alloy at the front end 1 of the threading tool shown in Fig. 4 is fixed to an eccentric shaft formed of the same material by a clamp rod. In addition, the pedestal portion shown in FIG. 2 is formed at the vacuum suction hole 6 to form a through hole (not shown). Before this system is used, since the vacuum suction holes provided on the protrusions are not covered with diamond, after the diamond coating is provided, they should also be through holes. Similarly, the comparative example has the same structure as the structure shown in FIG. The protruding part was made of polycrystalline diamond with a thickness of 50 micrometers on a SiC substrate (length) 60 mmx (width) 60 mmx (height) 3 mm, and then cut to a size of 5.4 mm x 30.4 mm. The base portion is prepared by mechanically processing an iron-nickel-cobalt alloy of a predetermined shape. Thereafter, the protruding portion and the base portion were joined with a silver solder to form a tip portion. In the wire bonding table thus obtained, the parallelism between the bottom surface of the table portion and the tool surface, the tool surface surface temperature distribution of the thermocouple portion at a temperature of 500 degrees Celsius, and the heating of the table portion and the base portion at 50 ° C The burn-in test, the durability of the joint interface between the base part and the protruding part during repeated heating and cooling from room temperature to 600 ° C, and the durability of 2 million times with a load of 20 kg at a temperature of 600 ° C were compared. Results As shown in Table 2. 22 ^ Paper size applies to China National Standard (CNS) A4 ~ Specification (210 X 297 mm) ---- J ----- IIi ------------ -(Please read the notes on the back before filling this page) 543130

P 〇 d A7 B7 五、發明說明(W) 表2 測試內容 本發明 習知品 台部上下面平行 度 0.8微米 15微米 工具面表面溫度 分佈 6°C 10°C 前端部燒損測試 沒有異常 30萬次後確認燒損 熱週期測試 沒有異常 24次後在突出部發生 割斷 600°C打線測試 沒有異常 120萬次後在前端部 發生割斷 測試條件之詳細敘述如下所示。 (請先閱讀背面之注意事項再填寫本頁) 工具面表面溫度分佈:熱電偶部的溫度爲500°C時的 工具面的最高、最低的溫度差。 台部燒損測試:500°C、負荷20kg、100萬次打線測 試後,每10萬次取出台部進行確認。 熱週期測試:從常溫加熱到600°C並保持2小時,之 後返回常溫的週期進行1〇〇次。 經濟部智慧財產局員工消費合作社印製 600°C打線測試:600°C、加重20kg、200萬次打線 測試。 在習知品中,對基體部和突出部焊接後的台部上下 面的平行度會惡化。需對其使用#170的金剛石砂紙傾斜硏 磨,並調整加工到平行度爲15微米爲止。由於需對平行 度調整進行傾斜硏磨,當硏磨到金剛石膜部分消失之際, 23 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 A7 B7 9146pif.d〇c/〇〇8 五、發明說明(>丨) 則無法進行該値以上的調整。針對此點,在本發明中,藉 由直接朝突出部覆蓋多晶金剛石而不需焊接的結構,因此 可在沒有焊接所發生的平行度惡化的情形下,達到平行度 爲〇·8微米的精確度。由於在覆蓋金剛石之前的台部上下 面的平坦度係爲5微米以下,因此可輕易達成上述覆蓋後 的精確度。 本發明中,由於台部沒有焊接部,因此,在上述測 試中’所有項目皆優於比較例。 實例3 . 使用實例1所製作的本發明品的打線工具和比較例 的打線工具,對溫度和平坦度的關係進行調查。將前述分 別女裝在弟2圖所不柄部上’藉由卡座加熱器加熱,並測 定工具面的表面溫度和在此溫度下的工具面的平坦度。其 結果如第7圖所示。平坦度的測定方法係記載於日本專利 〃特開平5-326642號公報中。在打線工具的工具面上按壓 金線等,對轉寫後的金線的平坦度進行測定,即可測得工 具面的平坦度。 習知的焊接類型的測定結果用△表示,本發明的測 定結果用黑圓圈表示。如第7圖所示,在本發明的情況下 從100°C到55〇°C的範圍內,幾乎沒有變化。針對此點, 習知品隨著溫度之提高,其平坦度朝著凹方向變化。②白 由於在基體部上所焊接的突出部的陶瓷的熱膨膜宏小5& 體部的金屬。相對於此,一體成型之產品,由於=膨論» 沒有差異,且沒有焊接,因而沒有焊接部的熱膨脹^自、率 24 度適用中國國家標準(CNS)A4規格(210 X 297公釐) — 11 — I — I ;叮·!— 丨丨丨 — · (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 543130 A7 B7 9146pif.doc/008 五、發明說明(w) 題。 再者,本發明的打線台也進行同樣測定,得到與本 實例相同的結果。 如上所述,根據本發明所得的打線工具和/或打線台, 係可對應多種的工具形狀,而具有僅需更換對應之前端部 即可的一大特徵。而且,在長時間使用時,固定部也不會 燒損。此外’由於沒有習知的打線工具所必需之焊接的接 合部,因此,對打線裝置整體而言,更具有將維持平行度 的加工費用或調整費用變得便宜的特徵。 ------------------—^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 25 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Pod A7 B7 V. Description of the invention (W) Table 2 Test content The parallelism of the upper and lower surfaces of the conventional product table of the present invention is 0.8 micrometers and 15 micrometers. After confirming that there was no abnormality in the thermal cycle test after 24 times, the 600 ° C cut-off occurred in the protruding part after the wire-bonding test. There were 1.2 million times that there was no abnormality in the front-end part. The test conditions are described in detail below. (Please read the precautions on the back before filling this page.) Tool surface temperature distribution: The highest and lowest temperature differences on the tool surface when the temperature of the thermocouple part is 500 ° C. Table section burnout test: After 500 ° C, 20kg load, and 1 million wire-stroke tests, the table section is taken out every 100,000 times for confirmation. Thermal cycle test: Heating from room temperature to 600 ° C for 2 hours, and then returning to room temperature for 100 cycles. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 600 ° C wire test: 600 ° C, 20kg weight increase, 2 million times wire test. In conventional products, the parallelism of the upper and lower surfaces of the table portion after welding the base portion and the protruding portion is deteriorated. Need to use # 170 diamond sandpaper oblique honing, and adjust the processing until the parallelism is 15 microns. Due to the oblique honing of the parallelism adjustment, when the honing to the disappearance of the diamond film, 23 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) 543130 A7 B7 9146pif.d〇c / 〇〇8 V. Description of invention (> 丨) The above adjustments cannot be performed. In view of this, in the present invention, a structure in which polycrystalline diamond is directly covered on the protrusions without welding is required. Therefore, a parallelism of 0.8 micron can be achieved without deterioration in parallelism caused by welding. Accuracy. Since the flatness of the upper and lower surfaces of the mesa before the diamond is covered is 5 micrometers or less, the accuracy after the covering can be easily achieved. In the present invention, since the table portion does not have a welded portion, all the items in the test described above are superior to the comparative example. Example 3. The wire bonding tool of the present invention manufactured in Example 1 and the wire bonding tool of Comparative Example were used to investigate the relationship between temperature and flatness. The aforementioned women's clothings were respectively heated on the handles not shown in Fig. 2 by a cassette heater, and the surface temperature of the tool surface and the flatness of the tool surface at this temperature were measured. The results are shown in Figure 7. A method for measuring the flatness is described in Japanese Patent Application Laid-Open No. 5-326642. Press the gold wire on the tool surface of the wire-bonding tool to measure the flatness of the gold wire after the transfer. The flatness of the tool surface can be measured. The measurement result of the conventional welding type is indicated by Δ, and the measurement result of the present invention is indicated by a black circle. As shown in Fig. 7, in the case of the present invention, there is almost no change in the range from 100 ° C to 55 ° C. In view of this, as the temperature of the conventional article increases, its flatness changes toward the concave direction. ②White The thermal expansion film of the ceramics of the protruding portion welded on the base portion is macroscopically smaller than the metal of the body portion. On the other hand, since the integrally molded product has no difference and there is no welding, there is no thermal expansion of the welded part. Since the rate is 24 degrees, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable — 11 — I — I; Ding! — 丨 丨 丨 — · (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 543130 A7 B7 9146pif.doc / 008 V. Description of Invention (w). The same measurement was performed on the wire bonding station of the present invention, and the same results as in this example were obtained. As described above, the threading tool and / or threading table obtained according to the present invention can correspond to a variety of tool shapes, and has a large feature that only the front end portion needs to be replaced. In addition, the fixed part does not burn during long-term use. In addition, since there is no welding joint necessary for a conventional wire bonding tool, the whole wire bonding device has a feature that the processing cost or adjustment cost for maintaining parallelism becomes cheaper. ------------------— ^ --------- (Please read the notes on the back before filling out this page) Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs Printed on 25 paper sizes for China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

M3130 A8 B8M3130 A8 B8 申請專利範圍 經濟部智慧財產局員Η消費合作社印製 1 · 一種打線工具,係爲由一前端部和一柄部所構成的 —半導體安裝用的打線工具,其特徵在於:構成該前端部 的—基體部和從該基體部突出的一突出部係由一體成形之 —材料所構成,該突出部的工具面係覆蓋有一氣相合成金 _石’該前端部和該柄部係使用機械固定或真空吸附固 定。 2· 一種打線台,係爲由一台部和一台座部所構成的 —半導體安裝用的打線工具,其特徵在於:構成該台部的 ~基體部和從該基體部突出的一突出部係由一體成形之一 所構成,該突出部的工具面係覆蓋有一氣相合成金剛 € ’該台部和該台座部係使用機械固定或真空吸附固定。 3.如申請專利範圍第1項所述之打線工具,其中該前 u而部係由以選自於SiC、Si3N4、A1N等所組成之族群之— 爲主成分的燒結體所構成,且於該工具面上利用氣相合成 法覆蓋一結晶金剛石。 4·如申請專利範圍第2項所述之打線台,其中該台音B 係由以選自於SiC、Si3N4、A1N等所組成之族群之〜爲主 f分的燒結體所構成,且於該工具面上利用氣相合成法覆 盍一結晶金剛石。 5·如申請專利範圍第1項或第3項所述之打線工具,_ 中該柄部係由選自於鉬、超硬合金、鎳基合金、鎢或鎢合 金、鐵鎳鈷合金、不銹鋼、鐵鎳合金、鈦或鈦合金等所組 成之族群之一種或2種以上所構成。 6.如申請專利範圍第2項或第4項所述之打線台,其 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 26 543130 A8 B8 C8 914 6pif. doc/ 0 0 8 D8 t、申請專利範圍 該台座部係由選自於鉬、超硬合金、鎳基合金、鎢或鎢合 金、鐵鎳鈷合金、不銹鋼、鐵鎳合金、鈦或鈦合金等所組 成之族群之一種或2種以上所構成。 7 · —種打線工具用前端部,包括:構成一前端部的 一基體部和從該基體部突出的一突出部係由一體成形之一 材料所構成,一體成形之該材料以選自於SiC、Si3N4、A1N 等所組成之族群之一爲主成分的燒結體所構成,該突出部 的一工具面係由一氣相合成金剛石覆蓋層所構成。 8. 如申請專利範圍第7項所述之打線工具用前端部, 其中該前端部的一底面與該工具面的平行度在常溫下係 2微米以下。 9. 如申請專利範圍第7項所述之打線工具用前端部, 其中從一側面側對該柄部的一安裝部進行觀察時,更包括 一安裝側面,該安裝側面具有朝向該工具面之邊長或直徑 減小的梯形形狀的截面形狀。 10. 如申請專利範圍第7項所述之打線工具用前端部, 其中在100°Cg] 550°C之間,該工具面的平坦度變化在1微 米以下。 11. 如申請專利範圍第7項所述之打線工具用前端部, 其中該前端部的該工具面上具有一個用以吸附一半導體元 件的至少一個的一真空吸附孔。 12. 如申請專利範圍第7項所述之打線工具用前端部, 其中該前端部的該工具面上具有用以吸附半導體的一真空 吸附槽和至少一個的一真空吸附孔。 27 --------------------訂·--------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 9146pif.doc/008 A8 B8 C8 D8 t、申請專利範圍 13· —種打線台用台部,包括:構成一台部的一基體 部和從該基體部突出的一突出部係由一體成形之一材料所 構成,一體成形之該材料以選自於SiC、Si3N4、Α1Ν等所 組成之族群之一爲主成分的燒結體所構成,該突出部的一 工具面係由一氣相合成金剛石覆蓋層所構成。 如申請專利範圍第13項所述之打線台用台部,其 中該台部的一底面與該工具面的平行度在常溫下係 2微 米以下。 15. 如申請專利範圍第13項所述之打線台用台部,其 中從一側面側對該台座部的一安裝部進行觀察時,更包括 一安裝側面,該安裝側面具有朝向該工具面之邊長或直徑 減小的梯形形狀的截面形狀。 16. 如申請專利範圍第13項所述之打線台用台部,其 中在l〇〇°C到550°C之間,該工具面的平坦度變化在1微米 以下。 17. 如申請專利範圍第13項所述之打線台用台部,其 中該台部的該工具面上具有一個用以吸附一半導體元件的 至少一個的一真空吸附孔。 18. 如申請專利範圍第13項所述之打線台用台部,其 中該台部的該工具面上具有用以吸附半導體的一真空吸附 槽和至少一個的一真空吸附孔。 19. 如申請專利範圍第1項所述之打線工具,其中於該 前端部和該柄部之間插入由選自於金、銀、銅、鈾、鉅、 鎳、鋁等軟質金屬所組成之族群所構成的1層或2層以上的 28 (請先閱讀背面之注意事項再填寫本頁) — n I— n —ϋ 訂---------線< 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 543130 9146pif.doc/008 A8 B8 C8 D8 六、申請專利範圍 金屬層。 2〇·如申請專利範圍第2項所述之打線台,其中於該台 部和該台座部之間插入由選自於金、銀、銅、鉑、鉅、鎳、 鋁等軟質金屬所組成之族群所構成的1層或2層以上的金屬 層。 21. 如申請專利範圍第7項所述之打線工具用前端部, 其中於該前端部和該柄部之間插入由選自於金、銀、銅、 鉑、鉅、鎳、鋁等軟質金屬所組成之族群所構成的1層或2 層以上的金屬層。 22. 如申請專利範圍第13項所述之打線台用台部,其 中於該台部和該台座部之間插入由選自於金、銀、銅、鉛、 钽、鎳、鋁等軟質金屬所組成之族群所構成的1層或2層以 上的金屬層。 ------------f--------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 29 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)Scope of patent application Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs1. A wire bonding tool, which is composed of a front end and a handle—a wire bonding tool for semiconductor mounting, which is characterized by: The base part and a protruding part protruding from the base part are composed of integrally formed material, and the tool surface of the protruding part is covered with a gas-phase synthetic gold stone. The front end part and the handle part are mechanically fixed or Vacuum suction fixed. 2. A wire bonding table, which is a wire bonding tool for semiconductor mounting, which is composed of a base and a base, and is characterized in that the base portion constituting the base portion and a protruding portion system protruding from the base portion It is composed of one piece, and the tool surface of the protrusion is covered with a gas-phase synthetic diamond. The platform and the platform are fixed by mechanical fixing or vacuum adsorption. 3. The wire bonding tool as described in item 1 of the scope of patent application, wherein the front part is composed of a sintered body composed mainly of a group selected from SiC, Si3N4, A1N, etc., and The tool surface is covered with a crystalline diamond by gas phase synthesis. 4. The wire bonding station as described in item 2 of the scope of the patent application, wherein the tone B is composed of a sintered body consisting mainly of f ~ selected from the group consisting of SiC, Si3N4, A1N, etc., and The tool face is covered with a crystalline diamond by a gas phase synthesis method. 5. As for the wire tool described in item 1 or item 3 of the scope of patent application, the handle is made of molybdenum, superhard alloy, nickel-based alloy, tungsten or tungsten alloy, iron-nickel-cobalt alloy, stainless steel. , Iron-nickel alloy, titanium or titanium alloy, or one or two or more groups. 6. As described in item 2 or item 4 of the scope of patent application, the line station is -------------------- order --------- Wire (please read the precautions on the back before filling this page) 26 543130 A8 B8 C8 914 6pif.doc / 0 0 8 D8 t, patent application scope The base part is selected from molybdenum, superhard alloy, nickel-based alloy , Tungsten or tungsten alloys, iron-nickel-cobalt alloys, stainless steel, iron-nickel alloys, titanium or titanium alloys, etc. 7 · —A front end portion for a wire tool includes: a base portion constituting a front end portion and a protruding portion protruding from the base portion are composed of an integrally formed material, and the integrally formed material is selected from SiC One of the groups consisting of Si3N4, A1N, etc. is composed of a sintered body having a main component, and a tool surface of the protrusion is composed of a vapor-phase synthetic diamond coating. 8. The front end portion for a wire-bonding tool as described in item 7 of the scope of patent application, wherein the parallelism between a bottom surface of the front end portion and the tool surface is 2 micrometers or less at normal temperature. 9. The front end portion for a wire tool as described in item 7 of the scope of patent application, wherein when a mounting portion of the handle is viewed from a side surface side, it further includes a mounting side surface, the mounting side surface having a portion facing the tool surface. Trapezoidal cross-sectional shape with reduced side length or diameter. 10. The front end of a wire-bonding tool as described in item 7 of the scope of patent application, wherein the flatness of the tool surface varies between 100 ° Cg and 550 ° C under 1 micrometer. 11. The front end portion for a wire bonding tool according to item 7 of the scope of patent application, wherein the tool surface of the front end portion has a vacuum suction hole for suctioning at least one of a semiconductor element. 12. The front-end portion for a wire bonding tool according to item 7 of the scope of the patent application, wherein the tool surface of the front-end portion has a vacuum adsorption groove for adsorbing semiconductors and at least one vacuum adsorption hole. 27 -------------------- Order · -------- Line (Please read the notes on the back before filling this page) Intellectual Property Bureau of the Ministry of Economic Affairs The paper size printed by the employee consumer cooperative is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 543130 9146pif.doc / 008 A8 B8 C8 D8 t, patent application scope 13 · —The department of wire-cable table, including : A base part constituting a platform part and a protruding part protruding from the base part are composed of a material integrally formed, and the material integrally formed is one selected from the group consisting of SiC, Si3N4, A1N, etc. The main component is a sintered body, and a tool surface of the protrusion is composed of a vapor-phase synthetic diamond coating. As described in item 13 of the scope of the patent application, the base portion of the wire base has a parallelism between a bottom surface of the base portion and the tool surface at a normal temperature of 2 micrometers or less. 15. As described in item 13 of the scope of the patent application, the wire section base section includes a mounting side surface when observing a mounting portion of the base portion from a side surface, and the mounting side surface has a side facing the tool surface. Trapezoidal cross-sectional shape with reduced side length or diameter. 16. As described in item 13 of the scope of the patent application, the table section for the wire table is between 100 ° C and 550 ° C, and the flatness of the tool surface is less than 1 micron. 17. The wire table base part described in item 13 of the patent application scope, wherein the tool surface of the base part has a vacuum suction hole for sucking at least one of a semiconductor element. 18. The wire table base section described in item 13 of the scope of patent application, wherein the tool surface of the table section has a vacuum adsorption groove for adsorbing semiconductors and at least one vacuum adsorption hole. 19. The wire tool according to item 1 of the scope of patent application, wherein a soft metal selected from the group consisting of gold, silver, copper, uranium, giant, nickel, and aluminum is inserted between the front end portion and the handle portion. Ethnic group 1 or above 28 (Please read the notes on the back before filling out this page) — n I— n —ϋ Order --------- line < Bureau of Intellectual Property, Ministry of Economic Affairs The paper size printed by the employee consumer cooperative is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 543130 9146pif.doc / 008 A8 B8 C8 D8 6. The scope of the patent application metal layer. 20. The wire bonding station as described in item 2 of the scope of patent application, wherein between the base portion and the base portion is inserted a soft metal selected from the group consisting of gold, silver, copper, platinum, giant, nickel, and aluminum. One or two or more metal layers made up of a tribal group. 21. The front end portion for a wire tool according to item 7 of the scope of patent application, wherein a soft metal selected from gold, silver, copper, platinum, giant, nickel, aluminum and the like is inserted between the front end portion and the handle portion. One or two or more metal layers composed of the group. 22. As described in claim 13 of the scope of the patent application, a station portion for a wire station, wherein a soft metal selected from gold, silver, copper, lead, tantalum, nickel, aluminum and the like is inserted between the station portion and the base portion. One or two or more metal layers composed of the group. ------------ f -------- Order --------- Line · (Please read the notes on the back before filling this page) Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 29 This paper is sized for China National Standard (CNS) A4 (210 X 297 mm)
TW091106810A 2001-04-25 2002-04-04 Bonding tool, bonding stage, front part of bonding tool, and stage of bonding stage TW543130B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001127511 2001-04-25
JP2002056989A JP2003017532A (en) 2001-04-25 2002-03-04 Bonding tool and bonding stage, and head for bonding tool and stage part for bonding stage

Publications (1)

Publication Number Publication Date
TW543130B true TW543130B (en) 2003-07-21

Family

ID=26614176

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091106810A TW543130B (en) 2001-04-25 2002-04-04 Bonding tool, bonding stage, front part of bonding tool, and stage of bonding stage

Country Status (3)

Country Link
JP (1) JP2003017532A (en)
KR (1) KR20020082786A (en)
TW (1) TW543130B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123413A (en) * 2005-10-26 2007-05-17 Elpida Memory Inc Method of manufacturing semiconductor device
WO2014065199A1 (en) * 2012-10-23 2014-05-01 東レエンジニアリング株式会社 Bonding tool cooling apparatus and bonding tool cooling method
JP2023552133A (en) * 2021-04-02 2023-12-14 イルジン ダイヤモンド カンパニー リミテッド High flat bonding tool with polycrystalline diamond tip integrated into carbide body

Also Published As

Publication number Publication date
KR20020082786A (en) 2002-10-31
JP2003017532A (en) 2003-01-17

Similar Documents

Publication Publication Date Title
KR100210900B1 (en) Bonding tool
US5425491A (en) Bonding tool, production and handling thereof
US5934542A (en) High strength bonding tool and a process for production of the same
US5213248A (en) Bonding tool and its fabrication
US7632716B2 (en) Package for high frequency usages and its manufacturing method
KR20000028759A (en) Semiconductor loading package
JP3297637B2 (en) Wafer support member
JP5345449B2 (en) Junction structure and manufacturing method thereof
KR100825354B1 (en) Substrate for device bonding, device bonded substrate, and method for producing same
TW543130B (en) Bonding tool, bonding stage, front part of bonding tool, and stage of bonding stage
US5373731A (en) Bonding tool, production and handling thereof
US6650011B2 (en) Porous ceramic work stations for wire and die bonders
JP4744016B2 (en) Manufacturing method of ceramic heater
JP3694607B2 (en) Contact heating heater and contact heating apparatus using the same
JP2523195B2 (en) Bonding tools
JP3381746B2 (en) Bonding tool
JP3163765B2 (en) Bonding tool and its manufacturing and handling method
US6914330B2 (en) Heat sink formed of diamond-containing composite material with a multilayer coating
JP3528357B2 (en) TAB mounting bonding tool
CN110246782B (en) Thermal bonding head for COF packaging and preparation method thereof
JPH0766930B2 (en) Bonding tools
JP3286448B2 (en) Thermocompression bonding tool, semiconductor device and method of manufacturing semiconductor device
TW202302250A (en) Bonding tool with high flatness comprising polycrystalline diamond tip unified on top of carbide body
JP4683775B2 (en) Wafer mounting stage and semiconductor manufacturing apparatus using the same
CN1243375C (en) Welding tool, welding bench, front end of welding tool and bench part of welding bench

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees