TW539755B - Methods of forming sputtering targets, and sputtering targets formed thereby - Google Patents

Abstract

The invention encompasses a method of forming a sputtering target. A wear profile for a sputtering target surface is determined. The wear profile is utilized to generate a desired profile for a sputtering target sputtering surface. A sputtering target is formed having a sputtering surface with the desired profile. The invention also encompasses a sputtering target having a sputtering domain which includes an edge region and a central region. The edge region of the sputtering domain is thicker than the central region.

Description

A7 B7

Technical Field I The present invention relates to a method for forming a sputtering target, and further includes a sputtering target formed by the method. The method of splashing money described with reference to FIG. 1 shows the separation distance τ / s between the cheap money 10 and the substrate 12. The distance τ / s refers to the distance from the sputtering target to the substrate. For example, the substrate 12 includes a wafer of semiconductor material. The sputtering target 10 includes many materials known to those skilled in the art, such as metallic materials (ie, one or more of aluminum, copper, titanium, Syria, tungsten, tungsten, nickel, etc.), or ceramic materials (also That is BaTi03, Pb (Zr, Tl) 03, BiSrTa〇3 #). And sputtering targets include many shapes. For example, FIG. 2 shows a sputtering target 10 including a circle. The sputtering targets in Figures 2 and 2 have the shape of an ENDURA ™ sputtering target approximately provided by Honeywell Internationai. Referring to FIG. 1, the shield 14 is on the peripheral region of the sputtering target 10. For example, the cover material 14 includes stainless steel or inscriptions. During operation, the material from the sputtering target 10 is sputter-deposited onto the substrate i 2. In particular, the sputtering target 10 has a planar surface 16 that is exposed to high-energy ions and / or atoms. The energetic ions and / or atoms disengage the atoms from the planar surface 16 'and the released atoms will then be deposited on the substrate 2. The shield 4 protects the periphery of the sputtering target 16 from being exposed to high-energy ions and / or atoms. One of the goals in the manufacture of sputtering targets is to deposit a uniform material layer on the substrate 12. The characteristic of achieving a uniform material layer is to allow a proper τ / s distance between the planar surface of the sputtering target and the substrate 12, and to maintain a substantially common τ / on the entire dry sputtering surface 16 of the substrate 12 s distance. The cover 14 is the size of this paper, which is applicable to the Chinese National Standard (CNS) A4 (21〇χ 297 mm) 539755 A7 B7 V. Description of the invention (2

It is necessary to alleviate the problems that occur when the inclined area of the sputtering target is exposed to high-energy ions and / or atoms during sputtering. Figure 3 does not show the sputter target 10 after the base plate has been dried and the sputtered material is consumed. In particular, Figure 3 shows the wear profile on a sputtered planar surface. The wear profile shown is for illustrative purposes only. For example, the actual shape of the loss profile depends on the type of magnet used in the sputtering process and the dry use limit. The dotted line 18 in Fig. 3 shows the starting position of the flat surface (i.e., the surface shown in Fig. 1) when the sputtering target 10 is new. As shown in FIG. 3, some grooves (ie, sputtering marks) are formed in the surface i 6 during the sputtering operation. Therefore, the surface 16 of the sputtering target is not worn off uniformly. The non-uniform pattern of Fig. 3 has been compensated by adding additional materials to the sputtering target 'in an attempt to improve the lifetime of the sputtering target. For example, Fig. 4 shows a sputtering target 20 for supplementing the uneven pattern of Fig. 3. The sputtering target 20 is indicated by a dashed line "showing the position of the starting surface 16 within the sputtering target 10 of Figs. 1-3. Fig. 4 also shows the extra material 22 at the original position 18 and the compensation map 3 The position for the uneven pattern. Therefore, the sputtering target 20 has a flat surface 24, which can effectively compensate the mirror image of the depleted shape of Fig. 3. Fig. 4 illustrates an embodiment of the conventional technique for compensating for the uneven pattern of Fig. 3. One embodiment is to form the additional material 22 only at the original position 18, without necessarily creating a mirror image of the depleted shape of Fig. 3. Regardless of the conventional technique used, the result is that the sputtering target is There are very large peaks at the locations where there is severe wear. The difficulty of the method of FIG. 4 is that the thickness of the sputtering target 20 on the surface can vary greatly, so the T on the surface relative to the sputtering target 20 surface 24 The / S distance can vary greatly. Therefore, the paper size of the thin layer from the sputter target 20 applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

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539755 A7 B7 V. Description of the invention The uniformity of deposition is much smaller than the uniformity of thin layer deposition from a sputtering target with a flat surface. Therefore, even if the sputtering target 20 of FIG. 4 can be used instead of the sputtering target 10 of FIGS. 1-3 to improve the service life, the loss of uniformity will cause the sputtering target 20 to be longer than the previous sputtering target of FIG. 1-3. 10 is less needed. There is a need to develop a technique to form a material with an improved time limit for use, and capable of uniformly depositing material bonds onto a substrate. SUMMARY OF THE INVENTION The invention is characterized in that the invention includes a method for forming a sputtering target. Determine the wear profile used to reduce the target surface. The abrasion profile corresponds to the shape of the surface of the sputtering target after the sputter target has been depleted. The wear profile is divided into multiple data points on the sputter-dried surface. Calculate the height difference of the target surface after depletion relative to the height difference of the target surface before depletion. The calculation of the height difference results in a plurality of wear definition data points. The depletion definition data point is used to calculate the time limit data point of the sputtering target, and the depletion definition data point is also used to calculate the m-plating data point. Calculate the difference between the time limit data points and the uniformity data points. The constant value of the difference between the limited data points and the sputtered uniform data points on the opposite side of the sputter plating is needed to produce the desired shape for the sputtering surface. Sputtering Sputtered surface with desired profile. The present invention includes another method of forming Wei Wei. It was decided to give the sputter-dried surface a rhyme-shaped appearance. The shape of the depletion is good #] Into a plurality of data points 'generate data points {Sl ... Sl}', where "ι" is a positive integer. Moreover, data points {Rl ... Rl} are generated to define the storage before depletion. I surface. Generate the difference data points {A..AJ, where each time 』, ^ body figure point An is defined as Rn_

539755

%. Calculate the time limit data point of the sputtering target {Βι Βι}. Each data point ^ is defined as ((An * y) + Q); where y is a constant greater than _ and 卩 is a constant that may be 0. Data points {Ci Ci} for sputtering uniformity are calculated, and each data point 匸 „is defined as ((An * Z) + P); where z is a constant P greater than 0 and less than y is a constant that may be 0. Calculate the difference data points {Di Di}, each difference data point DJ is defined as _ cn). The mosquito issues the maximum value of the difference contribution point and defines it as Dmax. Generate the required shape data set {Ει £} each data The point dagger is defined as (Cn + Dmaxp), so that the base plating surface has a shape corresponding to the required shape data point. In another feature, the sputtering target included in the present invention has a sputtering area, and the sputtering The region includes an edge region and at least a part of the central region surrounded by the edge region. The edge region of the sputtering region is thicker than the central region. Brief description of the preferred embodiment of the present invention is described with reference to the following related drawings. 1 is a cross-sectional view of a conventional sputtering target and a substrate. FIG. 2 is a drawing along line 2-2 of FIG. I. FIG. 3 is a cross-sectional view of a sputtering target of a conventional technology after the depletion of the sputtering operation. Fig. 4 is a cross-sectional view of a sputtering target of conventional technology, which is used to increase the use time of the sputtering target. The method is used. Figure 5 is a flowchart illustrating the method included in the present invention. Figure 6 is a cross-sectional view of a sputtering target after depletion of the sputtering operation, and particularly shows Figure 3 and money. Figure 6 also shows The data points defined on the dry surface of the money mine for the embodiment of the present invention are shown in Fig. 7. Fig. 7 shows a curve of the data points according to Fig. 6 of the present invention, and a special display.

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This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 539755 A7 B7

V. Description of the Invention G The curve including data points of the time limit of the sputtering target is used. Fig. 8 does not show the second curve of the data points of Fig. 6 according to the present invention, and the curve including the data points of the sputtering uniformity is shown separately. Figure 9 shows the difference curve resulting from the curve of Figure 8 minus the curve of Figure 7. Fig. 10 shows the required surface profile of the sputtering target determined after adding the parameters of the curve of Fig. 9 to the data of the curve of Fig. 8. FIG. Is a cross-sectional view of a sputtering target having a surface including a desired outline of FIG. 10. FIG. 12 is a top cross-sectional view of a sputtering target included in the present invention. Fig. 13 is a fragmentary view of the portion of Fig. 12 indicated by lines 13-13. The present invention includes a method for designing a sputtering target, which can be used to design the shape required for a base plating target design, so that the sputtering target will have an improved service life, and the sputtering target will be improved. The material is also sputtered to the required uniformity. The method of the invention can be used to improve sputtering targets of any shape and include any material. The feature of the present invention is described with reference to the flowchart of FIG. 5 and shown in FIG. Referring to Fig. 5, the initial step of the embodiment shown is to measure the wear profile from a used sputtering target. As shown in Fig. 6, it shows the used money corresponding to the explanation of Fig. 3-4. For example, a coordinate measuring machine can be used to measure the wear profile of a sputtering target. Fig. 6 shows the sputtering target 10 of Fig. 3 and shows the distance from the starting upper surface 18 of the coin plating target 10, X ,. For example, the distance X may include about% inches. Figure 6 also shows a plurality of data points {Al ···,} (where I is an integer greater than 0). Figure 6 actually shows only four data points {ΑΓ. ·· A4}, but it must be understood that in addition to the data points displayed, many other data points are needed and processed. The data points can be in accordance with the Chinese National Standard (CNS) Α4 specification (210 X 297 public love) at the entire paper size 539755

A cheap money for the surface. It should be noted that, although the present invention is described with reference to the method of measuring the shape of the drained waste and the measured value, it must be understood that the shape of the base plate can be determined by the method. Electric month self-generating model, not actual measurement of wear and tear shape. Information ·, {A! ··· Ai} is the difference between the wear surface 6 and the starting surface 18. In fact, the plane 18 is initially divided into a plurality of data points, and the plane surface 18 shown is the same as the others. Moreover, the surface 16 is divided into a plurality of data points {Si, and the data points (AL..A,} are determined by the difference between the data point: ^ and the data point s. Specifically, a data point An It is defined by ^ _. The calculation of {Αι Αι} is based on step 10 of Figure 5, and it is pointed out that by determining the amount of money to be dried in the area, the consumption in the multiple sputtering rake areas is calculated. Each data point {Αι A} corresponds to one of the areas in step 102. In the embodiment shown, A2, As, and A * have values of 4, 9, 4, and 6, respectively. The values are, , As and & the relative values of each other, and used to compare a, a〗, heart and A4. This value has a length unit, but there is no special unit assigned to some values, this value is for illustration purposes only , Does not correspond to the actual measurement value. The number of different data points {A ^ .Ai} will vary depending on the processing equipment and available time. A larger number of data points {Ai Ai} need to be used because Generally, better sputtering target loss is achieved than using fewer data points. However, a large number of data points are less expensive than It takes a long time to process the material point. In a typical embodiment, the number of data points is selected so that the interval between adjacent data points is from about 0.05 inches to about 0.5 inches. This paper size applies the Chinese National Standard (CNS) A4 specifications (21Q X 297 public y 539755 A7

V. Description of the invention (7 Refer to step 104 in FIG. 5, Jue Ning Shan & 丨, extract a plurality of sputtering target time limit data points corresponding to the area of {A 卜 ·· A 丨} _, ^ ^ 才 才Leaf point. This calculation results in the curve shown in Figure 7. More specifically, Figure 7 shows that ψ ^ τ includes a plurality of sputter-dried time-limited data points {Bi — BJ's winding. ≫ Each data point Bn is defined as ((An * y) + Q); where y is a constant greater than 0 or greater than 0, and Q is a constant that may be 0. The constant y defines the parameter _limit. Miscellaneous material limit parameter It can be from greater than 0 to 1, usually 025λ "aw to 0 · 5, and 033 is a typical value. Finally, the time limit parameter can determine how much material to add to the money, w increase money to dry Time limit of use. The money record & time limit is preferably an integer that is approximately the time limit of use of the shields around the Tibetan Mastiff (such as ^ 's cover 14). For example, if the cover has a use time of about 3GQ kilowatt hours, The dry time requires a use time of 600 kWh, 900 kWh or 12,000 kWh. The manufactured sputtering target has an indefinite use time limit. There is a need to develop a sputtering rake that has a precise use time limit that is substantially three or four times the use time limit of the shield. The present invention = method can produce qualified The sputtering material has a use time limit that is three times or more than the use time of the shield. The use time parameter of the sputtering target allows the use time of the sputtering target to be controlled. In the embodiment of FIG. 7, the use of the sputtering target is controlled. The time limit parameter is 0, and the constant q is 0. Therefore, in the embodiment shown, Ai, a2, a3, and eight 4 have values of 4, 9, 4, and 6, respectively, Ji, B2, B3, and 1 have 2 , 4, 5, 2 and 3. The curve B is relative to the dashed coordinate 30. The dashed coordinate 30 is defined by the parameter "Q". For example, the constant Q can correspond to the distance to Fig. 6 "χ ,,,, Or any value. -10-This paper size is in accordance with China National Standard (CNS) A4 specification (210 X 297 mm) 539755 A7-______ B7 V. Description of the invention (8) Please read step 1 0 6 of Figure 5, Determining the sputtering uniformity data points, giving the difference determined by the data points {Αΐ .. · Αι} As shown in Fig. 8, the data points of sputtering uniformity are expressed as {Cl ... C4}. In fact, a plurality of data points {1 ... Ci} 疋 are composed of a plurality of data points {A ^ ·. Αι} to determine. Each data point ^ is defined as ((An * Z) + p); where z is a constant greater than 0 and less than y, and p 疋 may be a constant of 0. The constant z is defined as Sputtering uniformity parameter. Actually, z is usually about 1 to 16 and can be about 1/16 to about 6. For example, the size of z is determined by the type of one or more magnets during the sputtering process, the distance between the base ore and the substrate during the sputtering process, the combination of the sputtering process chamber and the sputtering target, and the ratio = shell material point {C 1 · · · C i} defines the curve that can be used to form the dry surface of the sputtered ore, and the surface of the sputtered target will result in a highly uniform deposition material on the substrate. However, the service life of such a sputter target surface is not significantly improved relative to the initial sputter dry surface 18 (Fig. 6). Figure 8 shows the curves generated when z = 1/8, Cl, C2, C3 and the mouth are equal to 0, 1, 125, 0.5 and 0.75 respectively. The curve in FIG. 8 is relative to the coordinate 32. For example, the coordinate 32 is defined by a constant ρ and can correspond to the value of X in FIG. 6. The size of the coordinate 32 is preferably the same as the size of the coordinate 30 in FIG. 7, and the constant ρ used to generate the data point {Ci.hCi} is preferably equal to the data point {B ^., B. The constant Q used. Refer to step 108 of FIG. 5 to determine the largest difference between the data point of the time limit for the splash and the uniformity of the splash. As shown in FIG. 9, the curve is generated by subtracting the curve of FIG. 8 from the curve of FIG. In particular, the multiple values {A ... D] are generated using 〇11 each corresponding to ugly 11 _ (: 11. The curves shown include D!, D 2, D 3 and D 4 respectively, corresponding to 1 5, 3. 3 8, 1 · 5 and -11-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 539755 A7 B7 V. Description of the invention (10 has surface 52, and the The surface has the shape of Fig. 10. The shape of the sputtering target 50 corresponds to the shape of the sputtering target that produces the depletion pattern of Fig. 3. It has additional materials defined by the data points in the figure for forming the surface 52. More In particular, the dotted line 18 shows that the initial sputtering target of FIG. 3 has an upper surface. The additional material 54 is on the dotted line 8 which corresponds to the outline of FIG. 0. The additional material 54 has Surface 52. Surface 52 defines the maximum thickness of the sputtering target determined by the sputtering target time limit parameter y (assuming 0111 ^ is used to generate the required sputtering target surface profile using the curve of Figure 8) and results in Sputter-drying is required within a time limit. Further, the profile 52 has a surface defined by the sputter-drying uniformity parameter z. Integrity, and the deposition material is sputtered onto the substrate to achieve the required uniformity. Therefore, the method of the present invention can provide a sputtering target with the required time limit and the required sputtering uniformity. It can be determined The parameters 乂 and? Are used to meet the required specifications for a particular sputtering target application. The sputtering target in Figure n has a sputtering surface, including spikes in the high corrosion rate area (or epitaxial area) and The valleys in the high corrosion rate area (or epitaxial area). Figures 12 and 13 show further features of the present invention. Referring first to Figure 12, the sputtering target 200 is shown in a top view. The sputtering target 200 includes projections The edge region 202, the middle region 204, and the sputtering region 206. The sputtering region 206 is a region or thickness defined as a sputtering target 2000, and material is sputtered from this region during sputtering. In contrast, the flange area 202 and the middle area 204 are areas where the material is generally not sputtered (note that the flange area and the middle area will be protected by the obstruction 14 in FIG. 2), so in During the sputtering operation, it is separated from the sputtering area. Figure 13 shows a section of a part of the sputtering target 2000. Illustration and shows flange area -13-

539755 A7 ___ B7 V. Description of the invention (11) 202, the height relationship between the middle area 204 and the sputtering area 206. The sputtering area 206 includes a first surface 208 and a second surface 210 on a side opposite to the first surface 208. The first surface 208 can be regarded as a sputtered surface, and the second surface 208 can be regarded as a back surface. During the sputtering operation, the material is generally not sputtered from the back surface 210 of the sputtering area 206, because the operation is usually temporarily stopped until the sputtering trace penetrates the entire thickness of the sputtering area 206. When the back surface 210 is in a low-plating operation, it usually ends up close to the cooling device and / or the magnet. The sputtering region 206 includes an edge region 212 and a central region 214. The edge region 212 can be regarded as a high-corrosion region, and the central region 214 can be regarded as a low-corrosion region because the edge region 212 is usually etched faster than the central region 214 during a sputtering operation. It is to be understood that although the present invention is described with respect to a cheap design with a high-corrosion area in the marginal area and a low-corrosion S in the central area, the relative corrosion rates of the central area and the marginal area for different sputtering designs That can be reversed. In the description below, the present invention can be applied to a sputtering target design in which the shape of the bottom surface is reversed so that the center region has a high corrosion rate and the edge region has a low corrosion rate. One of the problems with Qian Zhongqian's use is that when using a low-dried plating, the low-corrosion rate region (the central region of the illustrated embodiment) becomes larger than the high-corrosion rate region (the edge region of the illustrated embodiment) thick. Compared to the current density in the high corrosion rate region of the sputtering region, the increased thickness in the low corrosion rate region reduces the current density in this region. As shown in the examples, the sputtering from the central region is reduced relative to what occurs in the peripheral region; thus, the central region is continuously thickened relative to the peripheral region. In the end, the effectiveness of the coin plating dry will deteriorate to the point that the characteristics of the thin layer formed from the coin drying (such as the uniformity of the thin layer on the wafer) are outside the required tolerance range, and the sputtering target is replaced. The characteristics of the present invention are broken -14-this paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 539755

It is known that if the sputtering target is designed to delay the problems related to the thick low corrosion rate region and the thin high corrosion rate region (thick central region and thin edge region), it can increase the useful use of the sputtering target. time limit. Another feature of the invention is the recognition that the cost associated with the sputtering target is the cost of the original material. Therefore, if less material is used in the central area of the sputtering target, some manufacturing costs of the sputtering target can be saved. Figure 13 shows a sputtering target designed to delay the problems associated with thick low corrosion rate regions and thin high corrosion rate regions. In the embodiment shown, the central region is a low corrosion rate region and the edge region is a high corrosion rate region. Initially, the center region 214 of the sputtering target is thinner than the edge region 212. In particular, for a planar sputtering target or an Enduratm sputtering target, the central region η # is preferably about 0% thinner than the edge region 2 1 2; for a planar sputtering target or an ENDURATM sputtering target, it is about 5% thinner. It is even better; for a planar sputtering target or an ENDURATM sputtering target, a thickness of about 11% to about 90% is even better; a thickness of about 11% to about 70% is even better. The typical difference in thickness between the central region 214 and the edge region 212 is about 30%, which in a particular embodiment corresponds to about 0.35 inches. For the enduratm sputtering target, the central region 214 is more than 11% thinner than the edge region 212, which has a special advantage, because in the sputtering operation, compared to the uniformity of the existing magnetic flux density, it will improve the sputtering Uniformity of magnetic flux density on the sputtering surface of the target. In the structure shown, the back surface 210 includes a solid planar region 216 on the edge region 212, and a curved region 218 between the substantially planar region 216 and the central region 214. The angled area 218 is bent more than 丨 relative to the substantially planar area 216. The angle "A" is preferably greater than 丨. To about 60. , Greater than 丨. To about 45. Then -15-539755 A7 _ B7 I. Invention description (13 ~) ^ ~ is better. The usual angle is about 2. To about 10. , The displayed angle is about 2.5. . The angle shown is measured from a sputtering target with a radius of approximately 4.4 inches (relative to the sputter-dried outer surface), but it is understood that the angle can be measured from other locations, such as 0, to 6.3, the position of the radius; including the position on the outermost edge of the Qianzhong District. This angle is preferably started after the main dry etching area (deep etched area or groove in Fig. 3) is sputter dried, and the angle is preferably in the second corrosion dry area (deep depth of Fig. 3) Burial zone or groove). The angle "A" is combined with the back surface 2 1 0. In the resulting sputter mirror, the central area of the base plating area is thinner than the edge area of the sputtering area. The reduced thickness of the central area will cause it to flow through the central area. The current density increases and the sputtering in the center area increases compared to the amount of sputtering that occurs when the center area is thicker. Therefore, the use of a thinner center area will make the center area more important during the important period of the sputtering target lifetime. Sputtering at a rate that is approximately equal to the edge area sputtering, compared to the edge area of the money splash area, the use time of the sputtering target will be increased. Another way is to 'bind angle' A '' to the back surface 2 1 0 is considered to form a cavity ′ extending to the surface of the spare part and toward the sputtering surface 208. In the embodiment shown, the entire cavity is within the sputtered area 206, and in particular, the entire cavity is within the low-corruption rate area of the sputtered area. Another advantage of the method of the present invention is that the magnetic flux density on the surface of the sputtering target can be controlled to be uniform. This is particularly important for magnetic materials, such as Ni, Co and Ni or Co alloys. The embodiment described with reference to FIGS. 12-13 can be used in combination with the method of FIG. 5-11 to generate a sputtering target with a good sputtering surface and a sputtering surface __-16-This paper size applies to China Standard (CNS) A4 size (210 X 297 mm) 539755 A7 B7

V. Description of the invention (14 The right back surface on the opposite side. The other way is that the method of Figure 2 and the method can be used in combination with the sputtering target of conventional techniques to form a relatively flat surface. And the sputtering target on the back surface on the opposite side of the corner, making the central area of the clocking area thinner than the edge of the money plating area. Although the method in Figure 12-13 is described with reference to a single stone sputtering target, it is important to understand What is more, the present invention can also use the design of non-single stone sputtering target. The design of non-single stone storage vessel includes the sputtered key which is bonded to the surface of the spare part. The methods of FIGS. 12 and 13 are combined to In the manufacture of non-single stone sputtering target design, a sputtering target with a recess in the back surface can be formed, so that the central area of the sputtering target sputtering area is thinner than the edge area of the sputtering target sputtering area. -17 -This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

539755 ^-, Λ \ ‘Hui No. 0 m 526 Patent Application Replacement Patent Scope (January) Patent claim range 8 8 8 8 A BCD 1 · A sputtering target, comprising: a smelting area comprising a ore material with a certain thickness, between the #th surface and the second surface of the opposite surface, the first The surface is a sputtered surface and the first surface is a 疋 σ 卩 surface. The sputtered area further includes a high corrosion area and a low corrosion area; and ^ the back surface is curved to face the sputtered surface, so that compared with the high corrosion, In terms of the thickness, the thickness of the money-spattering area in the low-money area will be reduced; the _ area in the high-corruption silver area is 5% thicker than that in the low-corrosion area. 2 · If it is claimed as the sputter target of item i in the patent, its shape is the same as that of the endUraTM sputter. 3. If the sputtering target of item 1 in the patent application description, the thickness difference of the money area is from 11% to 900 /. . 4 · If the sputter plating of item 1 in the scope of the patent application is dry, the thickness of the etched area is 11% to 70%. 5. As in the scope of patent application! The item line is redundant, in which the surface of the ship has the required shape. The material shape has sharp peaks in the high rot and low valleys in the low rot. 6. If the wth base in the scope of the patent application, the surface of the ship has the required shape 'The shape is generated by a method that includes the following steps: Decide to use @ 耗 失 ㈣ for the rhombic surface, and the wear shape corresponds to After the material is worn out from the money, the surface shape of the support bracket is calculated; the amount of wear on the positions on the multiple dry surfaces is calculated. The amount of wear on the position is multiplied by the money record average sentence parameter. In order to get the bitch from high corruption area to low corruption, among which 1¾ corruption area to low corruption This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 public love) 539755. The average value of the base ore set in the patent scope of Vi Sun Shenqing, the uniformity parameter of sputtering is 1/16 to 1/6; A certain additive value is added to the sputtering uniformity value to produce a desired profile for a sputtering target's sputtering surface; and a sputtering target forming a sputtering surface having a desired profile. The 'kind' base plating dry during the money plating operation includes: an argon plating zone including a sputtered surface and a back surface on the opposite side of the sputtered surface; a uniform magnetic flux density on the sputtered surface; and a cavity , Which extends into the back surface and faces the sputtering surface; the entire cavity is installed in the sputtering area of the sputtering target, where the sputtering area includes a high corrosion rate region and a low corrosion rate region, and the entire cavity is Contained in the low spoiled rice rate zone of the sputtering zone. 8. If the sputtering target of item 7 in the scope of the patent application includes one or both of nickel and cobalt. 9. If the sputtering target of item 7 in the scope of the patent application includes one or more alloys, the alloy includes one or both of nickel and cobalt. 10. A kind of money mine, comprising: a sputtering area, the sputtering area including a thickness of the sputtering material, the thickness has a first surface and a second surface on the opposite side of the first surface, the first surface Is a sputtered surface and the second surface is a back surface; the sputtered area further includes an edge area and a central area surrounded by the edge area; a substantially planar area of the back surface in the edge area; and a partial surface including a curved surface Corner area, between the central area and the substantially flat area, the angled area has an angle relative to the substantially flat area. The angle is large. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 Gongcheng) from P to 60. . . 1L A sputtering target, comprising: a hafnium plating area, the sputtering area including a thickness of a sputtering material, the thickness having a first surface and a second surface on an opposite side of the first surface, the third surface being a Tibetan plating The second surface is the back surface; the sputtering area further includes an edge area and a central area surrounded by the edge area; and the thickness of the sputtering area may vary from the edge area to the central area, and the edge area is at least larger than the central area It's also 5% thick. 12. The sputter target of item u in the scope of the patent application has the same shape as the ndraxm sputter dry. 13. The sputtering target according to item 11 in the scope of the patent application, wherein the thickness difference from the edge region to the central region is from 11% to 90/0. For example, the sputtering target of item 丨 丨 in the scope of patent application, wherein the thickness difference from the edge region to the center region is from 11% to 70%. 15. For the sputtering target of item 丨 丨 in the scope of patent application, the thickness difference from the edge area to the center area is at least 30%. 16. The sputtering target of item 丨 丨 in the scope of patent application, wherein the thickness difference from the edge region to the center region is at least 0.35 inches. 17. As the sputtering target of item u in the scope of the patent application, further comprising a substantially planar region on the back surface of the edge region j, and wherein the back surface includes a curved region between the central region and the substantially planar region, the The angled region has an angle with respect to the plane region, and the angle is greater than one. To 60. . Ru claims that the splash ore of item 1 丨 in the patent scope includes metal materials. 539755 8 8 8 8 A B c D Including ceramic materials. 'Including talents containing gaseous materials' includes one or more of the scope of patent application19. For example, the sputtering target of item 11 in the scope of patent application, including one or more of nickel, aluminum, copper, titanium, tantalum, tungsten With cobalt. 20. The sputter target of item n in the scope of the patent application includes one or more alloys which have one or more of nickel, aluminum, copper, titanium, neutron, ^ and 姑. " 21. If the splash clock is dried in item j 丨 in the scope of the patent application, 22. If it is dried in item 11 in the scope of the patent application. 21 Such as the sputtering targets BaTi03, Pb (Zr, Ti) 03 and BiSrTa03 in the scope of the patent application. 24. A method for forming a sputtering target, comprising: determining a wear profile for the surface of the sputtering target, the wear profile corresponding to the wear of the sputtering target surface after the material is sputtered from the sputtering target; Shape; calculate the amount of wear on a plurality of sputter-dried surfaces; multiply the amount of wear on the position by the sputter uniformity parameter to get the money uniformity value at that location. The money and mineral uniformity parameter is 1/1 6 to 丨 / 6; add a certain additive value to the sputtering uniformity value to produce the desired shape for the surface of the sputtered dry sputtering mirror; form a sputtered ore with a desired shape on the sputtered surface The sputtering target includes an edge region and a central region surrounded by the edge region; the sputtering target also has a back surface on the opposite side of the sputtering surface, the back surface having a substantially planar region on the edge region And form a corner region extending between the substantially planar region of the edge region and the central region, the angles of the corner regions are relative 539755 ABCD is greater than 1 in the substantially planar area. To 60. . 25 · —Based on the 24th target in the scope of the patent application. 26. —A method for forming a base mirror stem, including: determining a wear profile for a dry surface, the wear profile material being worn after being sputtered from a sputtering target, The plating target table calculates the consumption of the positions on the surface of the plurality of sputtering targets. Multiply the consumption of the positions by the average parameters of the sputtering ore to obtain the sputtering uniformity value at that position. The sputtering uniformity parameter is 1/16 to 1/6 / Add a certain -additive value to the average value of the base plating to produce the desired shape for the _ target sputtered surface; and the sputter that forms the sputtered surface with the desired shape Mirror dry. 27. A trivial matter formed according to the method in item 26 of the patent application. And the spatter ore formed therein. 28. The method of item 26 in the scope of patent application includes one or more inscriptions, copper and titanium. The base plating formed therein 29. The method according to item 26 in the scope of patent application includes ceramic materials. 30. A method for forming a sputtering target, comprising: determining a wear profile for the surface of the sputtering target, the wear profile corresponding to the wear of the sputtering target surface after the material is sputtered from the sputtering target; The shape of a pound is a certain amount of money on a surface other than the money key. On the surface of the paper, the paper scale is suitable for financial standards (CNS). I vertical μ ^,, the time target parameters of our money target are used to obtain the value of the first brother; the consumption amount in the first zone is not covered by the sputtering uniformity parameter to obtain the first value, the sputtering uniform sentence The number of sexual inflammation is smaller than the time limit parameter of the sputtering target; ^ Multiply the amount of wear on other areas by the sputter recording average sentence parameter to get the value of uniformity of money plating on the dagger area; Use the first Values, ancient + Laoshan ^ value can be added to the value of the difference; add the value of the bonus to at least one _r L, the value of the sputtering uniformity on the dagger area 'produced to the sputtering handle Double sacrifice, the required shape for the base plating surface; and forming the base plating surface with the required shape 31. For example, the method of the ^ ^ ^ member in the scope of patent application, wherein the value of the addition is the difference between the second value and the first value of the Yiyi Chengdi value. 32. According to the patent application The sputtering method formed by the method of item 30 in Yuan A π. The sputtering method formed therein: the sputtering method formed therein: 33. The method of item 30 in the scope of the patent application includes one or more Aluminum, steel and titanium. 34. The method of item 30 in the scope of patent application includes ceramic materials. The base ore is used 35. The method of item 30 in the scope of patent application has a limit parameter greater than 0 and less than or It is equal to i. The limit parameter is greater than or equal to 0.2 and less than or equal to 0.05. The sputtering target is 36. The method of item 30 in the scope of patent application is 539755 ----------- 6. The scope of patent application AB c D. If the method of item 3G in the patent application le * is applied, the number of uniformity tables of the hidden money in the application is greater than 0 and less than or equal to 1. 38. The method of item 30 in the scope of patent application , Where the number of splashed money is greater than or equal to 1/16 and less than Equal to 1/6. / 39. — A method for forming a sputtering target, including: determining a wear profile for the surface of the sputtering target, the wear profile corresponding to the wear of the mirror when the material is plated from the money ^ After that, the shape of the surface of the coin; between the multiple data points on the sputtered surface, plan the loss profile; for some poor material points to J, calculate the height of the sputtered surface after loss relative to the sputtered surface before loss The difference in height; from to / some depleted materials, calculate the target time data points for the sputtering target. Calculating the target time data points for the sputtering target includes multiplying the values of at least some deductible depleted points by the sputtering. The target time limit parameter of the plating target is used to calculate the sputtering uniformity data points from at least some of the wear definition data points. The calculation of the sputtering uniformity data points includes multiplying the values of at least some of the wear definition data points by the sputtering uniformity parameters. , Sputtering uniformity parameter is a value that is smaller than the use time parameter of the sputtering target; subtract the sputtering uniformity data point from the sputtering target time limit data point to get the difference data point; the difference is lean Wherein the sputtering target is added to one of the data points in a uniform, to produce the desired shape of the target sputtering surface of the sputtering; and forming a sputtered coating having the desired surface contour sputtering target plating. 40_If the 39th item in the scope of the patent application right # • 士 奴 # 1 'Go' further includes determining a data point with a large value difference, the chain reference is outside a positive distance, and the difference will have a maximum value of 1 dollar. ,,,, and the values are added to the sputtered leather ^ ^ ^ ^ ^ ^ ^ The uniformity data points are generated to produce the spattered money on the surface. 41. Species according to [] q in the patent scope. Sputtering formed by the method according to item y wherein the sputtering target formed therein is used when the sputtering target is used 42. The method according to item 39 in the scope of patent application includes one or more of aluminum, copper and titanium. 43. If the method of item 39 in the scope of patent application is applied, the limit parameter is greater than 0 and less than or equal to 1. 44. As the 39th item in the scope of the patent application, ^ ^ ^ 'wherein the sputtering target use time parameter is greater than or equal to 0.2 and less than or equal to 0.5. 45. For example, the 39th item in the scope of the patent application, Gans Vanguard, wherein the sputter plating average sentence parameter is greater than 0 and less than or equal to 1. 46. For example, item 39 in the scope of the patent application, the sputter plating average sentence parameter is greater than or equal to 1/16 and less than or equal to 1/6. 47 · —A method for forming a sputtering target, comprising: determining a wear profile for the surface of the sputtering target, the wear profile corresponding to the shape of the sputtering surface after the material is depleted from the drying; Divide the wear profile of a plurality of data points on the surface of the sputtering target to generate i data points {S 丨 ··· S1}, where 丨 is a positive integer; generate 1 data point corresponding to the sputtering target before wear Surface height, the data point is {R! ... D; 539755 Patent application scope. Calculate the difference data point {A ^ .Ai}, where AnS is defined as Rn_Sn; Calculate the time limit data point of the sputtering target, where Bn is Defined as ((An * y) + Q); where y is a constant greater than 0, and Q is a constant that can be 0; Calculate the sputtering uniformity data points, where (^ is defined as ((An Z) + P) 'where Z 疋 is a constant that is greater than 0 and less than y, and p is a constant that can be 0; calculate the difference data point {D ^ .D,}, whose center is defined as · Cn), and determine which difference The data point has the maximum value, and the difference data point with the maximum value is defined as Dmax; the difference is calculated Data points {El .., El}, where ^ is defined as (Cn + Dmax); and forming a base having a desired surface topography of the base money plating k. 48. A species based on item 47 of the scope of the patent application, Nai, where P equals Q. 49. A sputter dried by the method of item 47 in the scope of the patent application. 50. The method of claim 47, which includes one or more of aluminum, copper and titanium. 51 Sputtering target formed. If the method of item 47 in the scope of patent application, Gan Shi is equal to or more than y is smaller 52. If the method of item 47 in the scope of patent application, it is less than 0.2 and less than or equal to 〇 5 53. If the method of item 47 in the scope of patent application, „', tylA is equal to or more, where z is less than or equal to the size of this paper Applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 539755 8 8 8 8 A BCD patent application scope 54. The method of item 47 in the scope of patent application, where z is greater than or equal to 1/16 and less than or equal to 1 / 6. -10-This paper size applies Chinese National Standard (CNS) A4 size (210X297 mm)