538475 五、發明說明（1) 發明領域： 特別是關於 -種i : : ί ‘:關一編“夕薄膜剝除方法 >且快速剝除氮化矽薄膜之方法。 發明背景： 其主ΐ的體製程中常見的介電枓料 不易被氧所渗透刻幕罩，並藉著氣化砂 進行場氧化層製二防作為 很好，且不易ΐ 鼠化石夕對驗金屬離子的c 體元件的保護層（psslvati〇n layer厂，在作為半導 當氮化矽薄臈在半導體製程上的 =二二，’習知之氮化彻係可以使用-Γΐ將 但是，此種以，酸化 不穩定而造成控制不易，對、口方j，α其化學品較 氮化矽薄膜剝除完 午： 貝而έ危險性較高；且 基材產生破壞 畢後，鱗酸仍會繼續峰夕基材而對； 用。然而，氫氟醆對=進订鞋刻來達到去除氮化石夕之作 費的時間亦相對變長：導：：=，相當緩慢，所需耗 而對石夕基材表面產生破壞；且；基接f化學藥品進 _ 乳化石夕薄膜沈積 第4頁 538475 、發明說明（2) 厚度不一， 全去除該氮 週邊設備及 化石夕薄膜之 因此， k成的破壞 薄膜之方法 發明目的與 本發明 法’其係以 除氮化>5夕薄 造成的破壞 本發明 法’其係可 本發明 成本的氮化 安全性。 為達到 石夕薄膜之半 鉀水溶液接 完成後，清 該半導體基 清洗該半導 若再製程中設定相同的反應日守 化矽；再加上使用氫氟酸作為 耗材消乾大，此等問題皆使得 方式不利於半導體製程。 本發明即在減少習知之化學剝 的前提下，提出一種可有效且 ’以有效克服上述之缺失。 概述： ，主要目的，係在提出一種氮 氮氧化鉀水溶液配合氫氟酸達 ^之作用’以減少習知化學剝 Ο •^另一目的，係在提出一種氮 減少剝除氮化矽薄膜所需之時 ! 目的’係在提出一種可 石夕薄膜剝除方、、土 、， 于万法，亚增加操作 上述之目的，士八n ^ 省“、 本發明係先提供 導體基材，再脸# 冉將该半導體基材 觸反應，以w ^ 、 错此改變氮化矽薄 洗該半導體基好、， 丞材亚乾燥之；然 材反應，以叙刘丄μ 蚀刻去除該氮化矽 體基材並乾燥之。 間，則不容易完 J二/夜所需之 虱鼠酸韌除氮 除方法斜矽美， 快迷剝除氣化矽 化矽薄膜剝除 到有效且快速 除方法對矽基 化矽薄膜剝除 間。 減少化學品消 人員於操作時 一已形成有氮, 完全與一氫氧> 膜的性質；反> 後，令氫氟酸; 薄膜，完成後，538475 V. Description of the invention (1) Field of the invention: Especially about-species i:: ί ': "Edition of" Xi film stripping method "and method for rapid stripping of silicon nitride film. Background of the invention: Dielectric materials commonly used in the process are not easy to be permeated by oxygen, and the field oxide layer is protected by gasification sand as a second defense, and it is not easy to detect c-body elements of metal ions on the fossils. The protective layer (psslvation layer factory) is used as a semiconductor when the silicon nitride thin film is on the semiconductor process. The conventional nitrided system can use -Γΐ. However, this kind of acidification is unstable. As a result, it is not easy to control. The chemical properties of the chemical compounds are higher than those of the silicon nitride film after peeling off: the risk is high; and after the substrate is destroyed, the scale acid will continue to peak. Yes, however. However, the time required for the hydrofluoride pair to enter the shoe engraving to achieve the removal of nitrided stone is also relatively long: Guide :: =, it is quite slow, and it takes time to the surface of the stone Xi substrate Damage; and; based on f chemicals into _ emulsified stone evening film deposition page 5384 75. Description of the invention (2) The thickness is different, and the nitrogen peripheral equipment and the fossil evening film are completely removed. Therefore, the method of damaging the thin film formed by k is the purpose of the invention and the method of the present invention, which is to remove the nitrite> The method of the present invention is to destroy the nitridation safety of the present invention. In order to achieve the completion of the semi-potassium aqueous solution of the Shixi film, the semiconductor substrate is cleaned and the semiconductor is cleaned. If the same reaction date is set in the process, Silicon; coupled with the use of hydrofluoric acid as a consumable to dry up, these problems all make the method unfavorable to the semiconductor manufacturing process. The present invention proposes a method which can effectively and effectively overcome the above-mentioned problems on the premise of reducing conventional chemical stripping Summary: The main purpose is to propose a solution of potassium nitroxide solution combined with hydrofluoric acid to reduce the conventional chemical stripping. • Another purpose is to propose a nitrogen reduction and stripping silicon nitride. When the film is needed! The purpose 'is to propose a Ke Shixi film peeling method, the soil, and the method to increase the operation of the above purpose, Shiba n ^ Province ", the present invention The first is to provide a conductive substrate, and then face # Ran the semiconductor substrate to react, change the silicon nitride thin with w ^, and then wash the semiconductor substrate thinly, and then dry the wood material;丄 μ etch to remove the silicon nitride substrate and dry it. However, it is not easy to complete the method of removing acid and nitrogen from lice and mice. The oblique silicon beauty is used to peel off the vaporized siliconized silicon film. Removal to the effective and fast removal method for silicon-based silicon thin film stripping. Reduction of chemicals eliminates the formation of nitrogen at the time of operation, completely with the properties of a hydrogen >Acid; thin film, when finished
第5頁 538475 五、發明說明（3) 底下藉由具體實施例配合所附的圖式詳加說明， 容易瞭解本發明之目的、技術内容、特點及其所達成 效。 詳細說明： ^ 本發明係在利用氫氧化鉀水溶液改變氮化矽薄膜 再配合氫氟酸之作用，以達到有效且快速剝除氣 >專膜之目的’並可減少習知化學剝除方法對矽基材所 的破壞。 第一圖為本發明之流程示意圖，如圖所示，—種 3薄膜剝除方法係包括下列步驟：首先，配置重量百 :度介於1 0 %至3 〇 %之間的氫氧化钟水溶液，並提供一 體基材，通常為矽基材，其表面已形成有一氮化矽薄 如步驟S 1 0所示，在室溫至攝氏丨〇 〇度之間的環境中， f導體基材完全與該氫氧化鉀水溶液接觸反應，以藉 二化钾與半導體基材表面之化石夕反應，進而改變妻 薄膜的性質。 入 ^ 當I化矽薄膜與氫氧化鉀水溶液反應完全後，g " G所示β洗該反應完成之半導體基材’並乾燥之 於氣氧化鉀水溶液殘留不易清洗，所以該半導體基才 ’舌水清洗至少5分鐘，清洗後再乾燥之。 接著請參閱步驟S30所示，將乾燥後之半導體基 4量百分比濃度20%至49%的氫氟酸（HF )，在室溫： R π危 ~ 又之間的環境下進行反應，以快速蝕刻去除該氮4 當更 之功 之性 化矽 造成 氮化 分比 半導 膜； 將該 由氫 ^化石夕 f如步 ，由 卜需以 材以 L攝氏 L矽薄Page 5 538475 V. Description of the invention (3) At the bottom, detailed descriptions are provided by specific embodiments in conjunction with the attached drawings, so that it is easy to understand the purpose, technical content, characteristics and effects of the present invention. Detailed description: ^ The present invention uses a potassium hydroxide aqueous solution to change the silicon nitride film and cooperate with hydrofluoric acid to achieve the purpose of effective and rapid stripping of the gas > special film 'and can reduce the conventional chemical stripping method. Damage to the silicon substrate. The first diagram is a schematic diagram of the process of the present invention. As shown in the figure, a method for peeling off three kinds of films includes the following steps: First, configure a weight percent: a hydroxide aqueous solution between 10% and 30% And provide an integrated substrate, usually a silicon substrate, a silicon nitride thin film has been formed on the surface, as shown in step S 10, and the f-conductor substrate is completely in an environment between room temperature and 100 ° C. Contact with the potassium hydroxide aqueous solution to react the potassium dioxide with the fossils on the surface of the semiconductor substrate, thereby changing the properties of the wife film. After the reaction between the silicon oxide film and the potassium hydroxide aqueous solution is complete, β shown in G < G > washes the semiconductor substrate after the reaction is completed, and the dried potassium oxide aqueous solution remains difficult to clean, so the semiconductor substrate is not cleaned. Wash your tongue with water for at least 5 minutes and dry it after washing. Next, referring to step S30, the dried hydrofluoric acid (HF) having a concentration of 20% to 49% of the semiconductor group 4 is reacted at a room temperature: R π ~ ~ to quickly react. The nitrogen is removed by etching. When the silicon is more effective, it will cause a semi-conductive film with a nitride ratio. The hydrogen will be as small as the fossil, and the silicon will be thin by L Celsius and L.
538475 五、發明說明（4) 膜。最後， 體基材並乾 化石夕薄膜剝 其中， 液接觸反應 化矽薄膜之 反應時間加 短。 由於本 質’使氫氟 薄膜；且因 快’所需耗 導體基材的 除氮化;5夕薄 並增加操作 以上所 點，其目的 谷並據以實 凡依本發明 盖在本發明 虱化矽薄膜完全剝除 燥之，炱半_ 03 Λ 俊’需以水清、、Φ Υ 多γ U40所示，士 月冼4半導 除之技術。 如此即可完成整個氮 在步驟S10中，該半導 火 之時間範圍係依據半導豆體土才人氫氧化鉀水溶 厚薄來控制其反應時間，？ 表，所沈積的氮 長；氮化矽薄膜愈薄 =匕矽薄膜愈厚，則 所而反應時間則相對變 發明先利用氫氧化鉀溶 h 酸得以快速蝕刻去除丰=改艾鼠化矽薄膜之性 氫氟酸對該已反應後之^ =面之乳化石夕 費的時間亦相對變短， 手相田 ^ 只外，太π 所以可減少化學品對半 破I 時門二明之剝除方法不但可減少剝 膜所需可減少化學品消耗的成本， 人員於插作¥的安全性。538475 V. Description of the invention (4) Membrane. Finally, the body substrate is dried and the fossil film is peeled off. The reaction time of the liquid contact reaction silicon film is shortened. Due to the nature of the "hydrofluoride film" and the fast denitrification of the conductor-consumptive substrate required; the thickness of the film is increased and the above points are added. The purpose of this is to cover the lice in accordance with the present invention. The silicon film is completely stripped and dried. 炱 _ 03 Λ Jun 'requires the technology of water removal, Φ Υ Υ U 40, and Shi Yue 冼 4 semi-conductive removal. In this way, the entire nitrogen can be completed. In step S10, the time range of the semiconducting fire is controlled by the thickness of the semi-conductive soybean soil and potassium hydroxide in water to control its reaction time. Table shows that the deposited nitrogen is longer; the thinner the silicon nitride film is, the thicker the silicon film is, and the reaction time is relatively changed. First, use potassium hydroxide to dissolve the acid to quickly etch to remove the silicon oxide film. The time required for the reaction of the hydrofluoric acid to the ^ = surface of the emulsified stone is also relatively short, and the palm phase field is only ^, so it is too π, so it can reduce the chemical removal method for the half-break I. Not only can reduce the cost of peeling film and reduce the cost of chemical consumption, but also the safety of personnel to insert ¥.
、十、义實施例僅係為今'日g I 述之 Μ + 44_ 月本發明之技術思想及特 —你埶習此項技藝夕A , 在；；不能以之限定^ 士能夠瞭解本發明之内 施’田 社、山π 义本發明之專利範圍，即大 α 4武令&精神所作夕+人> 所揭7 <同 句等變化或修飾，仍應涵 ^番釗範阗内。 κ.' mThe tenth embodiment is only the technical idea and special feature of the present invention described in today's g I + 44_ month-you should study this skill, and you can't limit it to understand the invention The scope of the patents of the invention of Tianshe and Shanpi is the meaning of the big α 4 martial arts & spiritual spirit + person > Revealed 7 < Same sentence or other changes or modifications should still be included ^ Pan Zhaofan阗 内. κ. 'm
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