538457 五 經濟部智慧財產局員工消費合作社印製 A7 B7 、發明説明（） 發明領域： 本發明係有關於-種強化負調感光性材料 1〇以Photosensitive Material)結構的方法特別是有關於一 種利用多重曝光方式來強化負調感光性材料結構的方法。 發明背景： 在目前的半導體製程技術中’負調感光性材料為一種廣 ^吏用之高分子材料。其中’最具代表性的負調感光性材料 為具有極佳的熱安定性以及優良的機械、電氣、與化學性質 之感光型聚亞醯胺（P〇lyimide ; PI),為一高性能高分子材 料。在積體電路（IC)本身之結構與積體電路之構=^中， 沒類的負調感光性材料可應用在保護覆膜（passivaU〇n C〇atlng)、應力緩衝覆膜（Stress Buffer。…叫）、^粒子阻 障層（a-particle Barrier)、乾式蝕刻罩幕（Dry_e心‘㈨、以 及層間介電質（Interlayer Dielectrics)等方面上。在這些應用 中’由於負調感光性材料之穩定性佳，因此主要用途係用來 保護積體電路元件，以降低外力與材料層之應力差異 的衝擊。 、k成 一般，感光性材料依據化合物對光反應機構不同，可八 為正调感光性材料與負調感光性材料兩種。1 八T 貝调感井 性材料受到光線照射後，其内的分子會產生交聯 link)，導致遇光之感光性材料的結構加強，不會溶 , Μ中而無法將其去除。另外，負調感光性材料之交聯裎戶f 取決於曝光能量的高低。舉例而言，感光型聚醯亞胺 ：、 本紙張尺度適用中國國豕標準(CNS)A4規格(210X 297公爱） ----------------------訂 線 (請先閲讀背面之注意事項再填寫本頁}538457 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the description of the invention () Field of the invention: The present invention relates to a method for strengthening the structure of negative-sensitivity photosensitive materials (10 with a Photosensitive Material) structure, and in particular, to a use Multiple exposure method to strengthen the structure of negative-tone photosensitive material. BACKGROUND OF THE INVENTION: In the current semiconductor process technology, the 'negative tone photosensitive material' is a widely used polymer material. Among them, the most representative negative-tone photosensitive material is photosensitive polyimide (PI), which has excellent thermal stability and excellent mechanical, electrical, and chemical properties. Molecular material. In the structure of the integrated circuit (IC) itself and the structure of the integrated circuit = ^, no negative-sensitive photosensitive material can be applied to the protective film (passivaUon Coatlng), stress buffer film (Stress Buffer ... called), ^ a-particle barrier, dry etching mask (Dry_e heart '㈨, and interlayer dielectrics (Interlayer Dielectrics), etc .. In these applications' due to negative tone sensitivity The stability of the material is good, so the main purpose is to protect the integrated circuit components to reduce the impact of the difference between the external force and the stress of the material layer. K is general, and the photosensitive material may be positive depending on the compound ’s photoreaction mechanism. There are two types of photosensitive materials: negative-sensitivity materials and negative-sensitivity materials. 1 After the eight-T bayonet-sensitive materials are exposed to light, the molecules within them will crosslink), resulting in the structure of the light-sensitive materials being strengthened. It will dissolve in M and cannot be removed. In addition, the crosslinked user f of the negative-tone photosensitive material depends on the exposure energy level. For example, photosensitive polyimide :, This paper size applies to China National Standard (CNS) A4 specification (210X 297 public love) ------------------- --- Booking (Please read the precautions on the back before filling in this page)
經濟部智慧財產局員工消費合作社印製 始劑（Photo-initiator)受到光線照射，而產生自由基Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Photo-initiator is exposed to light and generates free radicals
Radical)，再由這些不穩定的自由基引發一連串的^反 (Chain Reacti〇n),而促使感光型聚醯亞胺產生交聯。因此了 曝光能量不足，則導致所產生之自由基的濃度不夠，而使得 材料之鏈反應不完全，進而使感光型聚醯亞胺無法達到飽和 交聯。 利用負調感光性材料製作圖案時，請參照第丨圖至第3b 圖，第1圖至第3b圖為繪示習知圖案化負調感光性材料之 製程剖面圖。首先，在半導體之基材1〇〇上塗覆一層負調减 光性材料層102，而形成如第i圖所示之結構。接著，請參 照第2圖，利用曝光光線112，並透過光罩n〇，對負調感 光性材料層102進行曝光。其中，光罩11〇上包括不透光區 108以及具有所需圖案之透光區ι〇6。因此，曝光光線ιΐ2 穿過透光區106而投射在負調感光性材料層1〇2上，便會在 負調感光性材料層1 02中形成位置與形狀皆對應於透光區 1 06之曝光區1 〇4。於是，同時將透光區丨〇6所構成之元件 圖案轉移到負調感光性材料層102之曝光區1〇4。 然後，進行負調感光性材料層1 02之顯影步驟。由於， 負調感光性材料經曝光後，產生交聯而無法為顯影劑所溶 解。因此，經顯影後，負調感光性材料層1 〇2之曝光區1 〇4 會留在基材100上，而其餘未曝光之負調感光性材料層1〇2 將會溶在顯影劑中而去除，並暴露出其底下之基材丨0〇。然 而，請參照第3 a圖，當第2圖之曝光光線1 12的能量低於 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) .............養.........訂.........線· (請先閲讀背面之注意事項再填寫本頁) 538457 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 飽和曝光能量時，雖然顯影劑可完全去除未曝光之負調感光 性材料層1 02，留下曝光區1 〇4。但是，負調感光性材料層 102之曝光區104的交聯並未達飽和狀態，而導致曝光區1〇4 所構成之圖案結構在應用時，會受到其他光線的影響，持續 產生父聯直至整個曝光區1 0 4達到交聯飽和。如此一來，使 曝光區1 〇4之圖案結構的機械性質以及化學性質產生改 變’進而造成元件的穩定性下降。 另一方面，當曝光光線112的能量高於飽和曝光能量 時，常會導致曝光區104周圍之負調感光性材料層1〇2產生 交聯。於是，為了將出現在曝光區i 〇4周圍之負調感光性材 料層1 02的交聯材料去除，而將顯影步驟進行的時間拉長。 因此’不僅造成製程的產量下滑，更會增加顯影劑的用量， 進而導致製程成本提高。再者，若曝光光線112的能量以及 時間控制不當，而使得曝光區1 04周圍之負調感光性材料層 102產生更強的交聯，導致顯影劑無法有效地將此非預期區 域所形成之交聯材料去除。如此一來，經顯影後，負調感光 性材料之殘潰114附著在曝光區1〇4之圖案結構的周圍，如 第3b圖所示。因此，圖案品質大受影響，進而使製程可靠 度與良率下降。 經濟部智慧財產局員工消費合作社印製 發明目的及概述： 鑒於上述習知在負調感光性材料上製作圖案時，常會 因曝光能量不足，而導致由負調感光性材料所構成之圖案 的結構與性質穩定性不佳，嚴重影響製程良率。或者，因 5 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 538457 A7 B7 五、發明説明（） 為曝光能量過高，不但導致成本提高以及產量下降，更在 非曝光區產生難以去除之感光性材料殘渣，嚴重影響製程 可靠度與良率。 因此，本發明的主要目的之一就是在提供一種利用多 重曝光的方式來製作並強化負調感光性材料的圖案結構， 其係先藉由低能量的曝光來將圖案轉移至負調感光性材料 層上’經顯影後製作出圖案結構。由於，低曝光能量並未 使負調感光性材料之交聯達到飽和。如此一來，可縮減顯 影所需之時間，並減少顯影劑的用量。因此，可提高產能， 降低製程成本。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 之導過效 案結飽， 調體， 料會影有 圖料到度 負導材 材不顯， 之材達定 化半基 性而在除 料性聯穩 強供之 光，，去 材光交的 種提述 感低此料。性感的構。\ : 上 調量因材率光調構結質 了括在 負能。性良感負结案品供包蓋 化和聯光與調之 W 圖案提少覆 案飽交感度負化 t 之圖更至層 圖光生調靠在案性料之明，料 為曝產負可為圖 Μ 材佳發法材 因較料之程因對纟性較本方性 是量材區製是量周光得，光光 就能性案高就能|.感獲的曝感 的光光圖提的光負調而目重調 目 曝感非 而目曝 使負進 之多負 一之調將進一高促加，述之 一 另用負地，再以來增構所構成 之使之利質的，，可結上結形 明所區順品明後光，案以料； 發構案可案發型曝此圖據材材 本結圖，圖本成行因化根性基 案非中善 構進。強 光一 圖致程改 結構和並 感之 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 538457 A7 B7 五、發明説明（） 其中此負調感光性材料層具有一飽和曝光能量；以一第一 預設能量透過一光罩對負調感光性材料層進行一第一曝光 步驟’藉以在上述之負調感光性材料層形成一曝光區以及 非曝光區，其中第一預設能量低於負調感光性材料層之 飽和曝光能量；進行一顯影步驟，藉以去除負調感光性材 料層之非曝光區，並暴露出部分之基材；以及以一第二預 設能量對負調感光性材料層之曝光區進行一第二曝光步 驟，其中第二預設能量不低於負調感光性材料層之飽和曝 光能量。 ， 由於，第一曝光步驟所使用之第一預設能量並不會使 負调感光性材料層之交聯達到飽和，因此顯影步驟進行的 時間不需太長就可順利地去除負調感光性材料層之非曝光 區’故可提高製程之可靠度、產量、以及良率，並減少顯 影劑的用篁’進而降低製程成本。另外，第二曝光步驟所 使用之第二預設能量可使負調感光性材料層之曝光區的交 聯達到飽和，因此曝光區之材料性質更為穩定，且曝光區 之結構的強度也獲得有效提升。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1圖至第3 b圖為繪示習知圖案化負調感光性材料之 製程剖面圖’其中第3a圖為負調感光性材料之曝光能量不 足時所形成之結構，第3b圖為負調感光性材料之曝光能量 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ..................餐： (請先閲讀背面之注意事項再填寫本頁) 訂. 經濟部智慧財產局員工消費合作社印製 538457 發明説明（ 過大時所形成之結構；以及 第4圖至第7圖為 ^ 日不本發明之一較佳實施例之圖案 化負調感光性材料的製程剖面圖 圖號對照說明： 100 104 108 1 12 200 204 208 212 基材 曝光區 不透光區 曝光光線 基材 曝光區 不透光區 曝光光線 102 106 1 10 1 14 202 206 210 214 負调感光性材料層 透光區 光罩 殘渣 負調感光性材料層 透光區 光罩 曝光光線 ...........:餐： (請先閲讀背面之注意事項再填寫本頁} 發明詳細說明 、=& 經濟部智慧財產局員工消費合作社印製 光再因降更之 發面圖 曝， 。到迷圖 本剖之 重構構達敘 7 示程料 多結結可之第 繪製材 之料料更明至 係的性構材材，發圖 圖料光 結性性案本 4 7 材感 料光光圖使第 第tt調 材感感之了合 至光負 性調調佳為配 圖感作 光負負度。並 4 調製 感出之強的述 第一C，調作化構目描 ，匕中 負製案結的叫 圖4 例 歹 案 化量圖且率下 7 '施 強能已質良照 第圖實 種光化品升參 至 k佳 一曝強高提可 圖例較 露低量得及， 4 施之 揭用能獲以備 第實明_ 明利光可本完 照佳發 發先曝僅成與 參較本 本，高不程盡。請一在 法用，製詳示 之。 方利此低加圖 明圖 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐） 538457 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 案結構時’首先塗佈一層負調感光性材料層2〇2覆蓋在半 導體之基材200上，而形成如第4圖所示之結構。其中， 負調感光性材料層202之材料可例如為負調感光型的聚亞 醯胺（PI)，而且負調感光性材料層202具有飽和曝光能量。 在飽和曝光能量照射下，負調感光性材料層2〇2之交聯可 達到飽和。 完成負調感光性材料層202之塗佈後，即可進行第一 次曝光步驟。請參照第5圖所示之剖面示意圖，利用具有 預設能量之曝光光線212透過光罩210，對負調感光性材 料層202進行曝光步驟，其中上述之曝光光線212的預設 能量應低於負調感光性材料層2 0 2之飽和曝光能量。舉例 而言，使負調感光型之聚亞醯胺能達到飽和交聯的飽和曝 光能量為1 3 〇毫焦耳（mj )，則第一次曝光步驟之曝光光線 2 1 2的能量就應該小於1 3 0毫焦耳，較佳是小於約1 〇 〇毫 焦耳。以上僅用以舉例說明，不同的負調感光性材料皆有 其不同之飽和曝光能量，本發明不限於此。在本實施例中， 光罩210至少包括不透光區208以及具有元件所需圖案之 透光區206。於是，當曝光光線212投射至光罩210時， 曝光光線212可穿過透光區206，而照射在透光區206之 正下方的負調感光性材料層202上，進而形成曝光區204。 由於透光區206具有元件所需圖案，因此經第一次曝光步 驟後，光罩2 1 0上之元件所需圖案就會轉移到負調感光性 材料層202上。 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) •.............餐........訂.........線· (請先閱讀背面之注意事項再填寫本頁) 538457 A7Radical), and these unstable free radicals trigger a series of chain reaction (Chain Reaction), which promotes the cross-linking of photosensitive polyimide. Therefore, insufficient exposure energy results in insufficient concentration of free radicals generated, which makes the chain reaction of the material incomplete, and further prevents the photosensitive polyfluorene imide from reaching saturated crosslinking. When making patterns using negative-tone photosensitive materials, please refer to Figures 丨 to 3b, and Figures 1 to 3b are cross-sectional views showing the process of conventional patterned negative-tone photosensitive materials. First, a semiconductor substrate 100 is coated with a layer of a negative-gloss matte material 102 to form a structure as shown in FIG. I. Next, referring to Fig. 2, the negative-sensitivity photosensitive material layer 102 is exposed by using the exposure light 112 and passing through the mask n0. The photomask 110 includes an opaque region 108 and a light transmitting region ιo6 having a desired pattern. Therefore, the exposure light ιΐ2 passes through the light-transmitting area 106 and is projected on the negative-tone photosensitive material layer 102. The position and shape of the negative-light-sensitive photosensitive material layer 102 correspond to the light-transmitting area 106. Exposure area 104. Thus, the element pattern composed of the light-transmitting area 〇6 is transferred to the exposure area 104 of the negative-tone photosensitive material layer 102 at the same time. Then, a developing step of the negative-tone photosensitive material layer 102 is performed. Because the negative-tone photosensitive material is crosslinked after being exposed, it cannot be dissolved by the developer. Therefore, after development, the exposed area 104 of the negative-tone photosensitive material layer 10 will remain on the substrate 100, and the remaining unexposed negative-tone photosensitive material layer 10 will be dissolved in the developer. The substrate is removed and the underlying substrate is exposed. However, please refer to Figure 3a. When the energy of the exposure light 1 12 in Figure 2 is lower than the paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied ... .. Keep ......... Order ......... Line · (Please read the notes on the back before filling this page) 538457 A7 B7 V. Description of the invention () (Please read first Note on the back, please fill in this page again) When the exposure energy is saturated, although the developer can completely remove the unexposed negative-tone photosensitive material layer 102, leaving the exposed area 104. However, the cross-linking of the exposed area 104 of the negative-tone photosensitive material layer 102 has not reached a saturation state, and the pattern structure formed by the exposed area 104 will be affected by other light when it is applied. The entire exposure area 104 was saturated with crosslinking. In this way, the mechanical properties and chemical properties of the pattern structure of the exposed area 104 are changed 'and the stability of the device is lowered. On the other hand, when the energy of the exposure light 112 is higher than the saturation exposure energy, cross-linking of the negative-tone photosensitive material layer 102 around the exposure area 104 is often caused. Then, in order to remove the crosslinked material of the negative-tone photosensitive material layer 102 appearing around the exposure area 104, the development step is lengthened. Therefore, 'not only causes the production yield to decline, but also increases the amount of developer used, which in turn leads to an increase in process costs. Furthermore, if the energy and time of the exposure light 112 are not properly controlled, the negative-tone photosensitive material layer 102 around the exposure area 104 will have stronger cross-linking, which will cause the developer to not effectively form this unexpected area. Removal of crosslinked material. In this way, after development, the residue 114 of the negative-tone photosensitive material is attached around the pattern structure of the exposure area 104, as shown in FIG. 3b. Therefore, the quality of the pattern is greatly affected, which further reduces the reliability and yield of the process. The purpose and summary of the invention printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: In view of the above, when making patterns on negative-tone photosensitive materials, the structure of patterns made of negative-tone photosensitive materials often results from insufficient exposure energy. Poor stability with nature, which seriously affects the process yield. Or, because 5 paper sizes are in accordance with Chinese National Standard (CNS) A4 specifications (210X 297 mm) 538457 A7 B7 V. Description of the invention () The exposure energy is too high, which not only leads to higher costs and lower yields, but also in non-exposed areas Residues of photosensitive materials are produced which are difficult to remove, which seriously affects the reliability and yield of the process. Therefore, one of the main objects of the present invention is to provide a pattern structure for negative-sensitivity photosensitive materials by using multiple exposure methods, which firstly transfers the patterns to negative-sensitivity photosensitive materials through low-energy exposure. After the layer is developed, a pattern structure is produced. The low exposure energy does not saturate the cross-linking of the negative-tone photosensitive material. This reduces the time required for development and reduces the amount of developer used. Therefore, productivity can be increased and process costs can be reduced. (Please read the precautions on the back before filling out this page) The guideline printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is full, and it is expected that the negative guide material will not be visible when the image is affected. The material has a semi-basic nature and is stable and strong in the material removal property. Sexy composition. \: The up-regulated quantity is based on the material rate and the light-toned structure is enclosed in negative energy. Negative sexual good closing products are available for coverage and the W pattern of Lianguang and Tune is reduced. For the picture M, the material of the material is better than the expected process. The opposite is more natural than the measuring method. The system is based on the amount of light. The light and light can be high and the case can be |. The light tone of the light map mentions the negative tone of the eye, but the eye exposure is not the same. The negative one will increase the negative one, and the negative one will increase. If it is good, you can tie the knot shape to the area and follow the light and the future; the case is expected; the structure of the case can be filed and the picture is exposed. Good construction. Glare, photo, process, structure, and texture. The paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) 538457 A7 B7. 5. Description of the invention () where the negative-tone photosensitive material layer has a saturated exposure Energy; performing a first exposure step on the negative-tone photosensitive material layer with a first preset energy through a photomask to form an exposed area and a non-exposed area on the above-mentioned negative-tone photosensitive material layer, wherein the first Set the energy lower than the saturation exposure energy of the negative-tone photosensitive material layer; perform a developing step to remove the non-exposed area of the negative-tone photosensitive material layer and expose a part of the substrate; and a second preset energy pair The exposure area of the negative-tone photosensitive material layer is subjected to a second exposure step, wherein the second preset energy is not lower than the saturation exposure energy of the negative-tone photosensitive material layer. Because the first preset energy used in the first exposure step does not saturate the cross-linking of the negative tone photosensitive material layer, the negative tone sensitivity can be removed smoothly without requiring a long time in the developing step. The non-exposed area of the material layer 'so can improve the reliability, yield, and yield of the process, and reduce the use of developer', thereby reducing the process cost. In addition, the second preset energy used in the second exposure step can saturate the cross-linking of the exposed areas of the negative-tone photosensitive material layer, so the material properties of the exposed areas are more stable, and the structural strength of the exposed areas is also obtained. Effective promotion. Brief description of the drawings: The preferred embodiment of the present invention will be explained in more detail in the following explanatory texts with the following figures, in which: Figures 1 to 3b show conventional patterned negative-tone photosensitive The cross-sectional view of the manufacturing process of the photoactive material '. Figure 3a shows the structure formed when the exposure energy of the negative-tone photosensitive material is insufficient, and Figure 3b shows the exposure energy of the negative-tone photosensitive material. This paper applies Chinese National Standard (CNS) A4. Specification (210X297mm) ........ Meal: (Please read the precautions on the back before filling out this page) Order. Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 538457 Description of the invention (the structure formed when it is too large; and Figures 4 to 7 show the process cross-section of a patterned negative-tone photosensitive material according to a preferred embodiment of the present invention. 104 108 1 12 200 204 208 212 Exposure area of substrate exposed area opaque area Exposure light of substrate exposed area Opaque area exposure light 102 106 1 10 1 14 202 206 210 214 Negative-tone photosensitive material layer light-exposure mask exposure light ...........: Meal: (Please read the notes on the back before filling out this page} Detailed description of the invention, = & Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The surface map is exposed, and the reconstruction of the map is broken. The construction material of the 7-step display material is more clear. The material of the drawing material is more clear. The structural material is sent out. This 4 7 material sense light and light map makes the tt-th tone material sense combined to the light negative tone adjustment for the photo sense as the light negative degree. And 4 modulation of the strong sense of the first C, tone For the chemical structure description, the result of the negative case in the dagger is called Figure 4. Example of the quantity of the case and the rate of 7 'Shi Qiangneng has been well-qualified. The legend of Tike is lower than the amount of exposure, and the application of 4 can be used to explain the facts. Fang Li here is a low-level illustration. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm). 538457 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7 B7 V. Description of the invention () In the case of the structure, "a negative-tone photosensitive material layer 202 is first coated on the semiconductor substrate 200 to form the structure shown in Fig. 4. Among them, the negative-tone photosensitive The material of the photosensitive material layer 202 may be, for example, negative-sensitive photosensitive polyimide (PI), and the negative-sensitive photosensitive material layer 202 has a saturated exposure energy. Under the irradiation of the saturated exposure energy, the negative-sensitive photosensitive material layer 2 The crosslinking of 2 can reach saturation. After the application of the negative-tone photosensitive material layer 202 is completed, the first exposure step can be performed. Please refer to the cross-sectional diagram shown in FIG. 5, and use the exposure light 212 with preset energy to pass through the mask 210 to perform the exposure step on the negative-tone photosensitive material layer 202. The preset energy of the above-mentioned exposure light 212 should be lower than Negatively adjust the saturation exposure energy of the photosensitive material layer 2 02. For example, if the negative exposure photosensitive polyimide can reach a saturation cross-linking saturation exposure energy of 130 millijoules (mj), the energy of the exposure light 2 1 2 in the first exposure step should be less than 130 millijoules, preferably less than about 100 millijoules. The above is only used for illustration. Different negative-tone photosensitive materials have different saturation exposure energies, and the present invention is not limited thereto. In this embodiment, the photomask 210 includes at least an opaque region 208 and a light-transmitting region 206 having a desired pattern of the device. Therefore, when the exposure light 212 is projected onto the mask 210, the exposure light 212 can pass through the light-transmitting area 206 and be irradiated on the negative-tone photosensitive material layer 202 directly below the light-transmitting area 206, thereby forming the exposure area 204. Since the light-transmitting region 206 has a pattern required for the element, after the first exposure step, the pattern required for the element on the mask 210 is transferred to the negative-tone photosensitive material layer 202. This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) • ............. Meal ........ Order ... .Line · (Please read the notes on the back before filling in this page) 538457 A7
經濟部智慧財產局員工消費合作社印製 五、發明説明（） 接著，進行負調感光性材料層2〇2之顯影步驟，藉由 負調感光性材料經光線照射後，其材料會產生交聯，而不 會溶解於顯影劑的性質。於是，可使得其餘未曝光之負調 感光丨生材料層2 0 2溶解在顯影劑中，而遭去除，進而暴露 出未曝光之負調感光性材料層2〇2的基材2〇〇。在此同時， 負調感光性材料層202之曝光區204不溶於顯影劑中，而 仍然留置在基材200上，所形成之結構如第6圖所示。至 此’已大致完成負調感光性材料之圖案結構的製作。 由於’第一次曝光步驟所使用之曝光能量低於負調感 光性材料層202之飽和曝光能量，於是不會在曝光區204 以外的區域產生交聯。因此，可大幅縮減顯影步驟的時間， 而減少顯影的使用量，可降低製程成本的負擔。此外，曝 光區204之結構周圍亦不會有非預期之負調感光性材料殘 渣形成。 完成負調感光性材料層202之圖案化後，請參照第7 圖’利用預設能量高於負調感光性材料層202之飽和曝光能 量的曝光光線214，在不使用任何光罩的情況下，進行第二 次曝光步驟。例如，負調感光型之聚亞醯胺的飽和曝光能量 為1 3 0毫焦耳，則第二次曝光步驟之曝光光線2 1 4的能量就 應該大於或等於1 3 0毫焦耳，較佳是大於約1 60毫焦耳。上 述之曝光光線2 1 4的能量僅係用以舉例說明，本發明之第二 次曝光步驟之曝光能量只要能不低於所使用之負調感光性 材料的飽和曝光能量即可，本發明不限於此。在第二次曝光 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ..............餮.........、玎.........着 (請先閲讀背面之注意事項再填寫本頁) 538457 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明説明（） 步驟時，曝光光線214可使曝光區204之負調感光性材料層 202之交聯達到飽和，而進一步地強化曝光區2〇4之圖案結 構’進而提高曝光區2 〇4之材料的穩定性。 本發明之較佳實施例中，係利用兩次曝光的方式來達到 強化負調感光性材料結構的目的，然而本發明並不限於兩次 曝光。本發明亦可根據製程需求與材料性質，利用多重曝光 的方式來達到強化負調感光性材料結構的目的。 本發明之一優點就是先利用低能量的曝光來圖案化負 調感光性材料層，藉以形成由未達交聯飽和之負調感光性 材料所組成的圖案結構。因此，可大幅縮減顯影步驟之時 間，進而降低顯影劑的用*。於是，彳達到提高產能，降 低製程成本的目的。 本發明之另一優點就是因為圖案化負調感光性材料之 圖案結構所使用的曝光能量較曝光飽和能量低，而不會在 非預期的區域導致負調感光性材料產生交聯。因此，可順 利地獲得高品質之圖案結構，減少缺陷的形成，而獲得極 佳之製程可靠度與良率。 &于 本發明之再一優點就是因為利用高曝光能量對圖案化 之負調感光性材料結構進行再次的曝光，藉以使負調感光 性材料結構達到交聯飽和。因此，可有效改盖 1 σ只兩琢光性 材料之圖案結構的穩定度，並達到強化圖案結構以及提高 圖案品質的目的。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 11 本紙張尺度適用中國國家標準(CNS)A4規格(2ΐ〇χ 297公釐) 、可 (請先閱讀背面之注意事項再填寫本頁) 538457 A7 B7 五、發明説明（） 已 發在 本含 離包 而脫應 例未均 施它 ， 實其飾 佳凡修 較；或 之圍變 並 範改 利效 專等 請之 申成。 之完内 明所圍 發下範 本神利 定精專 限之請 以 用 fcr 示申 揭之 所述 明下 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 2 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Next, the development step of the negative-tone photosensitive material layer 202 is performed. After the negative-tone photosensitive material is irradiated with light, its material will be crosslinked. Without dissolving in the properties of the developer. Thus, the remaining unexposed negative-tone photosensitive material layer 202 can be dissolved in the developer and removed, thereby exposing the substrate 200 of the unexposed negative-tone photosensitive material layer 200. At the same time, the exposed area 204 of the negative-tone photosensitive material layer 202 is insoluble in the developer and remains on the substrate 200. The structure formed is shown in FIG. So far, the production of the pattern structure of the negative-tone photosensitive material has been substantially completed. Since the exposure energy used in the 'first exposure step is lower than the saturation exposure energy of the negative-sensitivity photosensitive material layer 202, cross-linking does not occur in areas other than the exposure area 204. Therefore, the time of the development step can be greatly reduced, the amount of development used can be reduced, and the burden of the process cost can be reduced. In addition, no undesired negative-tone photosensitive material residue is formed around the structure of the exposure area 204. After completing the patterning of the negative-tone photosensitive material layer 202, please refer to FIG. 7 'using the exposure light 214 with a preset energy higher than the saturated exposure energy of the negative-tone photosensitive material layer 202, without using any photomask. To perform the second exposure step. For example, if the saturation exposure energy of negative-tone photosensitive polyimide is 130 mJ, the energy of the exposure light 2 1 4 in the second exposure step should be greater than or equal to 130 mJ, preferably Greater than about 160 millijoules. The above-mentioned energy of the exposure light 2 1 4 is only for illustration. The exposure energy of the second exposure step of the present invention may be not lower than the saturation exposure energy of the negative-tone photosensitive material used. Limited to this. In the second exposure, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) .............. 餮 ..., 玎 .. ....... (Please read the notes on the back before filling out this page) 538457 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention () In the step, the exposure light 214 can make the exposure area The cross-linking of the negative-tone photosensitive material layer 202 of 204 is saturated, and the pattern structure of the exposure area 204 is further strengthened, thereby improving the stability of the material of the exposure area 204. In the preferred embodiment of the present invention, the purpose of strengthening the structure of the negative-tone photosensitive material is achieved by using two exposures. However, the present invention is not limited to two exposures. The present invention can also use the multiple exposure method to achieve the purpose of strengthening the structure of the negative-tone photosensitive material according to the process requirements and material properties. One advantage of the present invention is that the negative-tone photosensitive material layer is first patterned by low-energy exposure, thereby forming a pattern structure composed of a negative-tone photosensitive material that has not reached the cross-linked saturation. As a result, the time for the development step can be significantly reduced, thereby reducing the use of the developer *. As a result, the company has achieved the goal of increasing production capacity and reducing process costs. Another advantage of the present invention is that the exposure energy used for patterning the pattern structure of the negative-tone photosensitive material is lower than the saturation energy of the exposure, without causing cross-linking of the negative-tone photosensitive material in unexpected regions. Therefore, it is possible to smoothly obtain a high-quality pattern structure, reduce the formation of defects, and obtain excellent process reliability and yield. & Another advantage of the present invention is that the patterned negative tone photosensitive material structure is exposed again using high exposure energy, so that the negative tone photosensitive material structure reaches cross-link saturation. Therefore, it is possible to effectively cover the stability of the pattern structure of 1 σ only two optical materials, and to achieve the purpose of strengthening the pattern structure and improving the quality of the pattern. As understood by those familiar with this technology, the above is only for the present invention. 11 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2ΐ〇χ 297 mm). Yes (please read the precautions on the back before filling in (This page) 538457 A7 B7 V. Description of the invention () has been issued in this document, but the application examples have not been applied to it, so that it can be decorated and repaired; to make. After the end of the Ming Dynasty, the template for Shenli Dingjing is limited. Please use the fcr to indicate the disclosure (please read the precautions on the back before filling this page). 2 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm)