TW538121B - Solution method for preparing ITO powders - Google Patents

Solution method for preparing ITO powders Download PDF

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TW538121B
TW538121B TW90123049A TW90123049A TW538121B TW 538121 B TW538121 B TW 538121B TW 90123049 A TW90123049 A TW 90123049A TW 90123049 A TW90123049 A TW 90123049A TW 538121 B TW538121 B TW 538121B
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indium
solution
acid
powder
tin
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TW90123049A
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Chinese (zh)
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Shin-Chung Lu
Jia-Hau Shiu
Yi-Chiau Lin
Jian-Lung Weng
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Cheng Loong Corp
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Abstract

A solution method for preparing indium-tin oxide (ITO) powders is provided. Different metal compounds are dissolved in water and proper additives respectively to form two solution bodies. Mixing the two solution bodies to form a mixing solution body and then adding some proper additives into the mixing solution bodies to form metal hydroxyl compounds with determined composition. After water washing and filtration, proper additives are added into the solution to peptize the solution. During the peptization process, hydrolysis and condensation reactions occurs between different metal hydroxyl compounds. Solvent of the solution is then removed to form high quality nanometer grade ITO powders.

Description

538121 _案號90123049_年月日_«;_ 五、發明說明(1) 本發明係關於一種以水溶液法製作氧化銦錫粉末(以 下簡稱為I TO)之方法,特別是指以不同來源之材料處理製 成高品質之奈米級(nano meter、1 0—9)ΙΤ0粉末。由於 I TO粉末乃製作I TO濺鍍靶材之原料,若欲得高品質、高緻 密度之IT0濺鍍靶材,則需組成均勻之奈米級IT0粉末。 氧化銦錫ITOUndium Tin Oxide)是一種摻雜錫的氧 化銦,一般稱作銦錫氧化物,屬於η型半導體,由於將比 銦多出一個價電子的錫摻雜到原有的氧化銦中,使得自由 載子的電子濃度增加,而提高其導電性。 由I TO製成之薄膜具有高導電性,以及對可見光具高 透光率,和對紅外線具高反射率,因此被廣泛的運用於太 陽能電池的透明電極、平板顯示器的驅動裝置和光偵測器 、透明加熱元件、抗靜電膜' 電磁波防護膜等電子、光學 與光電裝置上,尤其是液晶顯示器(LCD)的透明導電電極 材料。 能以真空蒸鍍法、磁控濺鍍法、化學氣相沉積法 '浸 潰塗佈法來製作I TO薄膜。其中濺鍍法較適用於大面積的 基板上,且製程溫度較低,節省能源,又不會產生有害物 質,具環保優點,因此I TO薄膜的製作常使用濺鍍法。 濺鍍法主要是利用高能離子撞擊適當靶材,將靶材的 物質撞擊出來,濺射到目標基板上,並且在基板上沉積出 所需的物質,而所沉積的物質與靶材組成息息相關,即與 革巴材的純度、成份及其均句度、緻密度、顯微結構的粒徑 分佈等因素有關。 一般濺鍍用靶材是混合氧化物的方法製成,主要是以538121 _Case No. 90123049_Year Month Date _ «; _ V. Description of the Invention (1) The present invention relates to a method for preparing an indium tin oxide powder (hereinafter referred to as I TO) by an aqueous solution method, in particular, it refers to a method using The material is processed into high-quality nano meter (10-9) ITO powder. Because I TO powder is the raw material for making I TO sputtering targets, if you want to obtain high-quality, high-density IT0 sputtering targets, you need to form a uniform nanometer IT0 powder. Indium tin oxide (ITOUndium Tin Oxide) is a kind of indium oxide doped with tin, generally called indium tin oxide, which belongs to the η-type semiconductor. Because tin, which has one more valence electron than indium, is doped into the original indium oxide, The electron concentration of the free carrier is increased, and its conductivity is improved. The thin film made of I TO has high conductivity, high transmittance to visible light, and high reflectivity to infrared light, so it is widely used in transparent electrodes for solar cells, driving devices for flat-panel displays, and light detectors. , Transparent heating element, antistatic film 'electromagnetic wave protective film and other electronic, optical and optoelectronic devices, especially the transparent conductive electrode material of liquid crystal display (LCD). I TO film can be produced by vacuum evaporation method, magnetron sputtering method, chemical vapor deposition method, and immersion coating method. Among them, the sputtering method is more suitable for large-area substrates, and the process temperature is low, saving energy, without generating harmful substances, and has environmental advantages. Therefore, the sputtering method is often used in the production of I TO films. The sputtering method mainly uses high-energy ions to strike a suitable target, knocks out the target material, sputters it onto the target substrate, and deposits the required material on the substrate, and the deposited material is closely related to the target composition. That is to say, it is related to the purity, composition and mean squareness, density, and particle size distribution of the microstructure of leather materials. Generally, the sputtering target is made by a mixed oxide method.

538121 _案號 9Q123049_年月日_魅___ 五、發明說明(2) 機械方式將不同氧化物原料粉末混合,再以熱(均)壓或冷 (均)壓方式的固態反應法,製成具有混合氧化物的靶材。 傳統之固態反應法係將氧化銦與氧化錫之粉末以機械方法 (如球磨)混合,乾燥後再經煆燒即得到I TO粉末。 靶材中不同氧化物的混合均勻程度有其極限,因為氧 化物中可能包含有不純物,以及原料的組成與粒徑分佈, 進而影響到I TO薄膜的導電性、透光性以及與基板的附著 性。 另一種可用於以製作靶材用超微粉末的方式是水溶液 法,為利用水溶解欲混合的金屬化合物,再經適當處理, 將溶解的金屬化合物聚合成能穩定懸浮於水中,且具較高 分子量的微粒,形成懸浮溶液,最後以加熱烘乾等方式除 去所有溶劑,得到超微粒粉末,供製作濺鍍靶材用。 習知之固態反應法有製作上之不精密之缺點,發明人 亦發現水溶液法所得到之成品同樣具有不精密之缺點,特 別是習知之水溶液法未經解膠之程序,所得到之成品粒徑 較大,且成分較不均勻,為了更符合實際需求,發明人乃 進行研發,以解決習知無法達成之精密製作問題。 本發明的目的在於提供一種以水溶液法製作氧化銦錫 粉末之方法,以所得之成品提供製作濺鍍用靶材之方法, 以不同製作方式所得之原料,利用水溶液製程(Solution Process),將適當的溶劑與添加劑,分別溶解不同金屬的 化合物,而配製出二澄清的溶液,再以攪拌方式,將二溶 液均勻混合,製作出均勻的水溶液,使不同化合物中的特 定成份發生凝縮反應,在先加入鹼液後加入酸液之特殊解538121 _Case No. 9Q123049_ 年月 日 _Character ___ V. Description of the invention (2) Mechanically mix different oxide raw material powders, and then use the hot (equal) or cold (equal) pressure solid state reaction method to make Targets with mixed oxides. The traditional solid state reaction method is to mix the powder of indium oxide and tin oxide by mechanical methods (such as ball milling), dry it and then calcinate to obtain I TO powder. There is a limit to the uniformity of the mixing of different oxides in the target, because the oxide may contain impurities, as well as the composition and particle size distribution of the raw material, which further affects the conductivity, light transmission and adhesion to the substrate of the I TO film. Sex. Another method that can be used to make ultra-fine powders for targets is the aqueous solution method. In order to dissolve the metal compounds to be mixed with water, and after appropriate treatment, the dissolved metal compounds are polymerized into a stable suspension in water with high Particles of molecular weight form a suspension solution, and finally all solvents are removed by heating and drying to obtain ultrafine particles for use in making sputtering targets. The conventional solid state reaction method has the disadvantage of imprecise production. The inventors also found that the finished product obtained by the aqueous solution method also has the disadvantage of impreciseness, especially the conventional aqueous solution method does not have a degumming process, and the particle size of the finished product is obtained. Larger and more uneven composition, in order to meet the actual needs, the inventor has carried out research and development to solve the problem of precision production that cannot be achieved by conventional methods. The purpose of the present invention is to provide a method for preparing an indium tin oxide powder by an aqueous solution method, and provide a method for manufacturing a sputtering target by using the obtained product. The raw materials obtained by different manufacturing methods, using an aqueous solution process (Solution Process), will be appropriate. Solvent and additives to dissolve different metal compounds respectively, and prepare a second clear solution, and then stir the two solutions to mix the two solutions uniformly to make a homogeneous aqueous solution, so that the specific components in different compounds undergo a condensation reaction. Special solution after adding lye

538121 案號 90123049 _η 修正 五、發明說明(3) 膠程序,使其 之懸浮氫氧化 微細粉末,經 勻度的濺鍍用 哥命’並提而 上述 再利用 級的 由於 化物 方式 所以 透光 溫度 能改 觸, 目的 例並 優點 而配 發明 粉末 使用 濺鍍 薄膜 觸發 所製 性, Λ-/Γ, 即 善把 避免 為使 所採 配合 ,當 本發 製穩 所使 第一種是 中依 般的 ,經 水溶 靶材 的導 聚結 作出 並且 省能 材在 發生 貴 取之 圖式 可由 明為 定懸 用的 將金 形成具有適當分子量、均勻組成以及粒徑小 物微粒的穩定懸浮液;去除溶劑後所得到之 均壓成形及燒結處理,製作出具較佳化學均 革巴材,以此所製成把材,可增加I巴材的使用 濺鍍後所生成薄膜的特性。 據本發明所製作出來的穩定懸浮溶液,可以 加熱烘乾程序等方式去除溶劑,便得到奈米 均壓成型及燒結處理,製作出濺鍍用靶材。 液法製程來製作供I T 0薄膜用的濺鍍靶材, 的組成粒子之粒徑及成份均勻性影響銦錫氧 電性及透光性,而水溶液製程因為是以溶液 反應來生成具有分子級組成均勻性的靶材, 來之濺鍍用靶材能提高濺鍍薄膜的導電性及 由於組成粒子較小,進一步降低燒結所需的 源消耗。此外,顯微結構中粒徑小的靶材, 濺鍍時的收縮程度,加強與冷卻水之間的接 過熱現象,所以能增加靶材的使用壽命。 審查委員能更進一步瞭解本發明為達成預定 技術、手段及功效,茲舉一較佳可行之實施 詳細說明如后,相信本發明之目的、特徵與 此得一深入且具體之瞭解。 一種以水溶液法製作氧化銦錫粉末之方法, 浮溶液的方法為使用無機鹽類為起始物,本 無機鹽類依取得方式的不同可區分為三類: 屬以酸液溶解後所得到之無機鹽類;第二種538121 Case No. 90123049 _η Revision V. Explanation of the invention (3) Glue procedure to make it suspend fine hydrogen hydroxide powder, and use homogeneous sputtering for life, and mention the above-mentioned reuse level due to the chemical method, so the light transmission temperature It can be changed, the purpose and the advantages are matched with the invention powder using a sputtered film to trigger the manufacturing property, Λ- / Γ, that is to avoid the need to make the match, when the hair system is stable, the first type is Zhongyi , Made by the agglomeration of a water-soluble target material and the energy-saving material is expensive. The gold can be formed into a stable suspension with appropriate molecular weight, uniform composition, and small particle size particles. The obtained pressure equalizing forming and sintering treatment can be used to produce a better chemically homogenized bar material, and the handle material can be used to increase the characteristics of the thin film produced after sputtering using the I bar material. According to the stable suspension solution prepared according to the present invention, the solvent can be removed by heating and drying procedures, etc., and then the nano-pressure equalizing molding and sintering treatment can be obtained to produce a sputtering target. The liquid method is used to make sputtering targets for IT 0 thin films. The particle size and composition uniformity of the constituent particles affect the electrical and optical properties of indium tin oxide, while the aqueous solution process uses a solution reaction to generate molecular-level materials. The target with uniform composition, the target for sputtering can improve the conductivity of the sputtered thin film, and because the composition particles are small, the source consumption required for sintering is further reduced. In addition, the target with a small particle size in the microstructure shrinks during sputtering and strengthens the phenomenon of overheating with cooling water, so it can increase the life of the target. The reviewing committee can further understand the present invention in order to achieve the predetermined technology, means and effects, and hereby give a better and feasible implementation. The detailed description is as follows. A method for preparing an indium tin oxide powder by an aqueous solution method. A floating solution method uses an inorganic salt as a starting material. The inorganic salt can be divided into three types according to the method of obtaining: It is obtained by dissolving in an acid solution. Inorganic salts; second

538121 案號 90123049 λ_a. 修正 五、發明說明(4) 是將回收之廢 種是一般商業 以無機鹽 類會在水中進 水反應產生錯 與親核加成二 懸浮微粒,在 分子懸浮微粒 ,之後加入微 成穩定的懸浮 如第一圖 作氧化銦錫粉 a ·溶解:適 也可以將 量之酸液 銦、錫離 為濃瑞酸 液。 b ·混合:將 c ·沈殿:加 之溶液產 之調整範 氧化銨化 d ·過滤、水 過濾), 靶材以酸液溶解後所得到之無機鹽類;第三 上所販售之無機鹽類。 類為起始物的水溶液配製中,無機的金屬鹽 行水解與凝縮反應,其中金屬陽離子會先與 離子,接著進行水解反應,再進行親核取代 種凝縮反應,產生Μ’ -Ο-M鍵結的無機高分子 加入適量的驗液後,使Μ ’ - 0 - Μ鍵結的無機局 轉化為Μ(ΟΗ)及Μ’(ΟΗ)的氫氧化物懸浮微粒 量的酸來抑制氫氧化物發生聚結現象,以形 液。 所示之流程圖,為本發明一種以水溶液法製 末之方法,依據流程圖,說明如下: 當量的銦化合物及錫化合物分別溶於水中。 金屬銦與金屬錫,或回收之廢靶材溶於適當 中,然後再溶解於水中,使水溶液中所含之 子濃度約為0 . 1 Μ- 5. 0 Μ,作為溶解之酸液可 、濃鹽酸或適當比例之濃硝酸、濃鹽酸混合 上述兩溶液充分混合,並攪;拌之。 入適量之鹼液調至適當之pH值,使原本澄清 生沈澱,其中鹼液之濃度為IN-1 2N,而pH值 圍為3-9;鹼液可為氨水或含烷基取代之氫 合物(如氫氧化1 -甲基銨)◦ 洗:將上述溶液經適當之過濾方式(如減壓 並用純水重新打散濾餅,如此動作重複一遍538121 Case No. 90123049 λ_a. Amendment V. Description of the invention (4) The recovered waste is a common commercial inorganic salt that will react with water in the water to produce the wrong and nucleophilic addition of two suspended particles. In the molecular suspended particles, Add a stable suspension as shown in the first picture as indium tin oxide powder a. Dissolution: It is also possible to separate the amount of acid solution indium and tin into concentrated acid solution. b. Mixing: c. Shen Dian: plus adjusted ammonium oxide produced by solution d. filtration, water filtration), inorganic salts obtained by dissolving the target in acid solution; third inorganic salts sold on the market . In the preparation of aqueous solutions that are starting materials, inorganic metal salts undergo hydrolysis and condensation reactions, in which metal cations are first reacted with ions, followed by hydrolysis reactions, and then subjected to nucleophilic substitution condensation reactions to produce M ′ -0-M bonds. After adding an appropriate amount of test solution to the bound inorganic polymer, the M '-0-M-bonded inorganic layer is converted into M (OΗ) and M' (ΗΗ) hydroxide suspended particulates in an amount of acid to suppress hydroxide. Coalescence occurs to form fluid. The flow chart shown is a method for preparing the end by an aqueous solution method according to the present invention. According to the flow chart, the description is as follows: Equivalent indium compounds and tin compounds are separately dissolved in water. Metal indium and metal tin, or recovered waste target materials are dissolved in appropriate, and then dissolved in water, so that the concentration of the son contained in the aqueous solution is about 0.1 Μ-5. 0 Μ, as the dissolved acid solution can be concentrated, concentrated Hydrochloric acid or concentrated nitric acid and concentrated hydrochloric acid in an appropriate ratio are mixed with the above two solutions and mixed thoroughly, and stirred; Add an appropriate amount of lye to adjust the appropriate pH value to make the original clarification and precipitation, where the concentration of the lye is IN-1 2N, and the pH range is 3-9; the lye can be ammonia or alkyl-containing hydrogen Compound (such as 1-methylammonium hydroxide) ◦ Wash: The above solution is filtered by appropriate means (such as decompression and re-scattering the filter cake with pure water, repeat this action again

538121 _案號90123049_年月曰 修正_ 五、發明說明(5) 以上。即形成水洗後之懸浮液。 e ·解膠:將經過水洗後之懸浮液,加入適當量之酸液, 以控制溶液之pH值於一適當範圍,並攪拌適當之時間 予以解膠。其中酸液之濃度為1 N - 1 5 N,p Η值之調整範 圍為1 - 6,攪拌時間為2 - 7 2小時;酸液可為硝酸、鹽 酸、醋酸、草酸或甲酸等。 f ·乾燥:將上述解膠後之懸浮液予以乾燥,得到白色之 氫氧化銦/錫(Indium Tin Hydroxide,以下稱為ITH) 之粉末,氧化銦錫粉末燥之方法可為烘箱直接乾燥或 者利用喷霧乾燥機予以乾燥。 g ·煆燒:將白色之I TH粉末置入高溫爐,經適當之升溫 速率、持溫溫度及持溫時間,煆燒成黃綠色之I TO粉 末。其中升溫速率為1 - 2 0 °C /每分鐘,持溫溫度為 3 0 0 - 1 1 0 0 °C ,持溫時間為0 . 5 - 5小時。 實施例一(商業販售之無機鹽) a ·取5 0 . 0 5 g之硝酸銦(含一個結晶水,純度9 9 · 9 9 %,分 子量為3 1 8 . 8 5 )及5 . 6 7 g之氯化錫(含五個結晶水,純 度9 9 %,分子量為3 5 0 . 5 0 )分別溶於去離子水中,並使 溶液之最終體積分別為1 5 5 m L及1 6 m L,此時之姻、錫 離子濃度各為1 . 0 Μ。 b ·將上述兩澄清溶液充分混合並攪拌之。此時銦錫離子 之莫耳數比為9 0 : 1 0。 c ·在搜:拌的狀態下,快速加入3 5 m L之濃氨水(2 5 w t % ), 使原本澄清之溶液產生白色沈澱物,此時之pH值為7 · 25 〇538121 _ Case No. 90123049_ Year Month Amendment _ V. Description of the invention (5) and above. A suspension after washing with water is formed. e. Degumming: Add the appropriate amount of acid solution to the suspension after washing with water to control the pH of the solution to a proper range and stir for a suitable time to degumming. The concentration of the acid solution is 1 N-1 5 N, the adjustment range of the pΗ value is 1-6, and the stirring time is 2-7 2 hours; the acid solution may be nitric acid, hydrochloric acid, acetic acid, oxalic acid, or formic acid. f · Drying: The suspension after the above degumming is dried to obtain a white powder of Indium Tin Hydroxide (hereinafter referred to as ITH). The method for drying the indium tin oxide powder may be directly drying in an oven or using Spray dryer to dry. g. Burning: Put the white I TH powder into a high temperature furnace, and burn it to yellow-green I TO powder after proper heating rate, holding temperature and holding time. The heating rate is 1-20 ° C per minute, the holding temperature is 300-1 100 ° C, and the holding time is 0.5-5 hours. Example 1 (commercially sold inorganic salts) a. Take 5 0. 05 g of indium nitrate (containing a crystal water, purity 99.99%, molecular weight 3 18.8. 5) and 5.6 7 g of tin chloride (containing five crystal waters, with a purity of 99% and a molecular weight of 35.50) were separately dissolved in deionized water, and the final volumes of the solutions were 15 5 m L and 16 m L, at this time the marriage and tin ion concentration were 1.0 M. b. Mix the two clear solutions thoroughly and stir them. In this case, the mole ratio of indium tin ions is 9 0: 10. c. In the state of searching and mixing, quickly add 35 ml of concentrated ammonia water (25 wt%) to make the originally clear solution produce a white precipitate. At this time, the pH value is 7.25.

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C .上述含白色沈澱物之溶液持續攪拌至少1 2小時以 上。 d將上述溶液以減壓過濾方式過濾水份,可得到白色之 遽餅’再置入去離子水中重新攪拌以打散濾餅,如此 動作重複二遍。在最後一次之過濾後,加入去離子水 使/谷液之體積約為1 8 〇 m L,以得到懸浮液。 e ·將經過水洗過濾後之懸浮液,加入3mL之濃硝酸 (7 0 w t % ) ’使溶液之ρ η成為3 · 5 8,並攪拌2 4小時。 e 1 ·上述溶液經粒徑分析儀之量測,其粒徑為丨5 3nm。 f ·將上述解膠後之懸浮液予以噴霧乾燥法乾燥之,即得 到白色之氫氧化銦/錫(Indium Tin Hydroxide,以下 稱為ITH)之粉末共32.61g。 經熱重分析(TG analysis)結果,其l〇ss率為28.1%。 g ·將上述白色之ITH粉末置入高溫爐,以1 〇°c /min之升 溫速率、在8 0 0 °C下持溫3小時,即得到黃綠色之I τ 0 粉末。 實施例二(商業販售之金屬製成無機鹽) a •取2 5 · 0 2 g之金屬銦(純度9 9 · 9 9 %,分子量為11 4 · 8 ), 溶於100mL之濃石肖酸(70wt%),加入適當量之去離子 水,使溶液之最終體積為2 1 8 m L,此時之銦離子濃度 為1 · 0 Μ。取7 · 9 4 g之氯化錫(含五個結晶水,純度 9 9 %,分子量為3 5 0 · 5 0 )溶於去離子水中,並使溶液之 最終體積為22mL,使銦、錫離子濃度各為1 Μ。 b ·將上述兩澄清溶液充分混合並授拌之。此時銦錫離子 之莫耳數比為90:10。C. The above white precipitate-containing solution is continuously stirred for at least 12 hours. d. The above solution was filtered under reduced pressure to obtain water, and a white cake was obtained, which was placed in deionized water and stirred again to break up the filter cake. This operation was repeated twice. After the last filtration, deionized water was added so that the volume of the valley solution was about 180 mL to obtain a suspension. e. Add 3 mL of concentrated nitric acid (70 wt%) 'to the suspension after washing and filtering with water to make the pH of the solution 3 · 5 8 and stir for 24 hours. e 1 · The above solution was measured by a particle size analyzer, and its particle size was 5 3 nm. f. The above-mentioned degummed suspension was spray-dried to obtain 32.61 g of white indium tin hydroxide (hereinafter referred to as ITH) powder. As a result of TG analysis, the 10ss rate was 28.1%. g. Put the white ITH powder into a high-temperature furnace and hold the temperature at 800 ° C for 3 hours at a temperature rise rate of 10 ° C / min to obtain a yellow-green I τ 0 powder. Example 2 (commercially sold metal made of inorganic salts) a • Take 2 5 · 0 2 g of metal indium (purity: 99.99%, molecular weight: 11 4 · 8), dissolved in 100mL of concentrated stone Acid (70wt%), add an appropriate amount of deionized water, so that the final volume of the solution is 2 1 8 ml, and the indium ion concentration at this time is 1.0M. Take 7 · 94 g of tin chloride (containing five crystal waters, purity 99%, molecular weight 3 50 · 50) and dissolve it in deionized water to make the final volume of the solution 22 mL. The ion concentrations were each 1 M. b. Mix the two clear solutions thoroughly and mix them. The molar ratio of indium tin ions at this time is 90:10.

第10頁 538121 90123049Page 10 538121 90123049

案號 五、發明說明(7) Ϊ f、I i快速加人75rnL之、、物 c ·在攪拌的 使原本澄 11 〇 •上述含 上 ° 將上述溶 濾餅,再 動作重複 使溶液之 將經過水 (7 〇 w t °/〇), •上述溶 將上述解 到白色之 稱為ITH) 經熱重分 25.54%。Case number five, description of the invention (7) Ϊ f, I i quickly add 75 rnL of the product, the product c · Stir to make the original clear 11 〇 • The above content is included ° The above filter cake, the action is repeated to make the solution After water (70 wt ° / 〇), the above solution is called ITH, which is the solution to the white, and it is thermally divided into 25.54%.

C d e e I ο 清之溶液產生白色沈 幾物’展氨水(2 5 w t % ), ’此時之p Η值為7 . 至少1 2小時以 液以減壓過濾方式過濾 置入去離子水中重新^上知’可得到白色之 三遍。在最後一次之過=打散濾'餅,如此 體積約為24〇ffiL,以得到y4 ’加。入去離子水 洗過滤後之縣洋饬,1 /液。 你决、y Γ 加入5社之濃硝酸 、广之pΗ成為3· 4 2,並擾拌2 4小時。 液t粒分析儀之量測,其粒徑為丨42。 膠後之懸浮液予以喷霧乾燥法乾燥之,即得 氫乳化銦/錫(Indium Tin Hydroxide,以下 之粉末共43.18g。 析(TG analysis)結果,其loss率為 白色沈澱物之溶液持續攪掉 S' ·將上述白色之ITH粉末置入高溫爐,以10 °C /min之升 溫速率、在8 0 0 °C下持溫3小時,即得到黃綠色之I TO 粉末。 實施例三(金屬以酸溶成無機鹽)(習知對照實施) a ·取2 5 · 11 g之金屬銦(純度9 9 · 9 9 %,分子量為1 1 4 · 8 ), 溶於100mL之濃硝酸(70wt%),加入適當量之去離子 水,使溶液之最終體積為2 1 8 m L ’此時之銦離子濃度 為1 · 0 Μ。取7. 9 6 g之氯化錫(含五個結晶水,純度9 9 %C dee I ο clear solution produces a white sinking substance 'ammonia water (25 wt%),' p Η value at this time is 7. At least 12 hours, the solution is filtered under reduced pressure and placed in deionized water to re- ^ Shangzhi 'can get white three times. At the last pass = break the filter 'cake, so the volume is about 240 ffiL to get y4' plus. Into deionized water, wash the filtered yarrow, 1 / liquid. You decide, y Γ adds the concentrated nitric acid of 5 company, Hiroyuki pΗ becomes 3. 4 2 and stir for 2 4 hours. As measured by liquid particle analyzer, its particle size is 42. The gelled suspension was spray-dried to obtain hydrogen emulsified Indium Tin Hydroxide (43.18 g of powder below. As a result of TG analysis, the solution with a loss rate of white precipitate continued to stir Drop S '· Put the white ITH powder into a high-temperature furnace, and hold it at 800 ° C for 3 hours at a heating rate of 10 ° C / min to obtain a yellow-green I TO powder. The metal is dissolved into an inorganic salt with an acid) (the conventional control is implemented) a. Take 2 5 · 11 g of metal indium (purity: 99.99%, molecular weight: 1 1 4 · 8), and dissolve in 100mL of concentrated nitric acid ( 70wt%), add an appropriate amount of deionized water, so that the final volume of the solution is 2 1 8 m L 'At this time the indium ion concentration is 1.0 M. Take 7. 9 6 g of tin chloride (containing five Crystal water, purity 99%

第11頁 538121 _案號9Q123049_年月日__ 五、發明說明(8) ,分子量為3 5 0 . 5 0 )溶於去離子水中,並使溶液之最 終體積為22mL,使銦、錫離子濃度各為1M。 b ·將上述兩澄清溶液充分混合並攪拌之。此時銦錫離子 之莫耳數比為90:10。 c ·在攪拌的狀態下,快速加入1 OOmL之濃氨水(25wt%), 使原本澄清之溶液產生白色沈澱物,此時之pH值為7 · 16 ° c 1 ·上述含白色沈殿物之溶液持續授:拌至少1 2小時以 上。 d ·將上述溶液以減壓過濾方式過濾水份,可得到白色之 濾餅,再置入去離子水中重新攪拌以打散濾餅,如此 動作重複三遍。在最後一次之過濾、後,加入去離子水 使溶液之體積約為2 4 0mL,以得到懸浮液。 e ·將上述經過水洗過濾、後之懸浮液,在不加任何酸的情 形下,攪拌2 4小時。 e 1 ·上述溶液經粒徑分析儀之量測,其粒徑為2 3 5 0 n m。 f ·將上述解膠後之懸浮液予以喷霧乾燥法乾燥之,即得 到白色之氫氧化銦/錫(Indium Tin Hydroxide,以 下稱為ITH)之粉末共43. 18g。 經熱重分析(TG analysis)結果,其loss率為 2 5. 5 4〇/〇 〇Page 11 538121 _Case No. 9Q123049_Year Month Day__ V. Description of the invention (8), molecular weight is 3 50.50) Dissolved in deionized water, and the final volume of the solution is 22mL, so that indium, tin The ion concentrations were each 1M. b. Mix the two clear solutions thoroughly and stir them. The molar ratio of indium tin ions at this time is 90:10. c · With stirring, quickly add 100mL of concentrated ammonia (25wt%) to make the originally clear solution produce a white precipitate. At this time, the pH value is 7 · 16 ° c 1 · The above solution containing white sinks Continuous teaching: Mix for at least 12 hours. d. Filter the water in the above solution under reduced pressure to obtain a white filter cake. Then place it in deionized water and stir again to break up the filter cake. Repeat this operation three times. After the last filtration, deionized water was added to make the solution volume about 240 mL to obtain a suspension. e. Stir the above-mentioned suspension after washing and filtering with water, without adding any acid, for 24 hours. e 1 · The above solution was measured by a particle size analyzer, and its particle size was 2 350 nm. f. The above-mentioned degummed suspension was spray-dried to obtain a white powder of Indium Tin Hydroxide (hereinafter referred to as ITH) totaling 43.18g. As a result of TG analysis, the loss rate was 2 5. 5 4〇 / 〇 〇

g ·將上述白色之ITH粉末置入高溫爐,以10 °C /min之升 溫速率、在8 0 0 °C下持溫3小時,即得到黃綠色之I TO 粉末。 實施例四(回收再使用之I T 0廢靶材)g. Put the white ITH powder into a high-temperature furnace, and hold it at 800 ° C for 3 hours at a temperature rising rate of 10 ° C / min to obtain a yellow-green I TO powder. Example 4 (I T 0 waste target recovered and reused)

第12頁 538121 _ 案號90123049__年月日 #正_ 五、發明說明⑼ a ·取l〇.〇3g之ITO廢乾材,溶於iQQmL之濃鹽酸(37wt%) ,溶解完畢後經過濾以去除未溶之雜質。 該溶液經具感應結合離子、原子的放射光譜儀 ICP-AES(inductively coupled plasma - atomic emission spectrometer)進行定量後,得到銦/錫比 值為1 5。加入適當量之去離子水,使溶液最終之體積 為 1 5 OmL。 a 1 ·取6 · 1 0 g之氣化錫(含五個結晶水,純度9 9 %,分子 量為350.50 )溶於25 mL之去離子水中。 b ·將上述兩澄清溶液充分混合並攪拌之。此時銦錫離子 之莫耳數比為9 0 : 1 〇。 c ·在攪拌的狀態下,快速加入1 50mL之濃氨水(25wt%), 使原本澄清之溶液產生白色沈殿物,此時之p Η值為7. 30 〇 c 1 ·上述含白色沈澱物之溶液持續攪拌至少1 2小時以 上。 d ·將上述溶液以減壓過濾方式過濾水份,可得到白色之 濾餅,再置入去離子水中重新攪拌以打散濾餅,如此 動作重複三遍。在最後一次之過瀘、後,加入去離子水 使〉谷液之體積約為1 7 5 m L,以得到懸浮液。 e ·將經過水洗過濾後之懸浮液,加入5mL之濃硝酸 (7〇wt%),使溶液之pH成為3.50,並攪拌24小時。 e 1 ·上述溶液經粒徑分析儀之量測,其粒徑為丨2 7ηιη。 ί ·將上述解膠後之懸浮液予以喷霧乾燥法乾燥之,即得 到白色之氫氧化銦/錫(Indium Tin Hydroxide,以Page 12 538121 _ Case No. 90123049__ 年月 日 # 正 _ V. Description of the invention ⑼ a · Take 10.03g of ITO waste and dry material and dissolve it in concentrated hydrochloric acid (37wt%) in iQQmL. After dissolution, filter To remove undissolved impurities. The solution was quantified by an inductively coupled plasma-atomic emission spectrometer (ICP-AES) with inductively bound ions and atoms, and the indium / tin ratio was 15. An appropriate amount of deionized water was added to make the final volume of the solution 15 OmL. a 1 · Take 6. · 10 g of gasified tin (containing five crystal waters, purity 99%, molecular weight 350.50) and dissolve in 25 mL deionized water. b. Mix the two clear solutions thoroughly and stir them. At this time, the molar ratio of indium tin ions is 90:10. c · With stirring, quickly add 150 mL of concentrated ammonia (25wt%) to make the originally clear solution produce a white sink, at this time the p Η value is 7. 30 〇c 1 The solution was continuously stirred for at least 12 hours. d. Filter the water in the above solution under reduced pressure to obtain a white filter cake. Then place it in deionized water and stir again to break up the filter cake. Repeat this operation three times. After the last pass, deionized water was added so that the volume of the valley solution was about 175 m L to obtain a suspension. e. Add 5 mL of concentrated nitric acid (70 wt%) to the suspension after washing and filtering to make the solution pH 3.50, and stir for 24 hours. e 1 · The above solution was measured by a particle size analyzer, and its particle size was 2 7ηη. ί · The above-mentioned degummed suspension was spray-dried to obtain a white indium tin hydroxide.

第13頁 538121 案號 90123049 曰 修正 五、發明說明(10) 下稱為ITH)之粉末共9. 64g。 經熱重分析(TG analysis)結果,其loss率為 25.15%。Page 13 538121 Case No. 90123049 Amendment V. Description of Invention (10) hereinafter referred to as ITH) powder 9.64g. As a result of TG analysis, the loss rate was 25.15%.

g ·將上述白色之ITH粉末置入高溫爐,以10°C /min之升 溫速率、在8 0 0 °C下持溫3小時,即得到黃綠色之I TO 粉末。 實施例五(本發明製成之實施例) (1 )·取經由上述實施例二之方法所製得之I T 0粉末 50g,置入1L之球磨罐中,加入50g水,配製成固 含量為5 0 w t %之漿料,並球磨2 4小時。 (2 ) •將上述之漿料予以乾燥,得到球磨之I TO粉末。 (3 ) •將該粉末置入1. 6吋模具當中,分別經過冷壓及 冷均壓成型,得到I TO之靶材生坯。 (4 ) •將上述靶材生坯置入高溫燒結爐,燒結條件如 下: 步驟一 步驟二 步驟三 步驟四g. Put the white ITH powder into a high-temperature furnace, hold the temperature at 10 ° C / min for 3 hours, and obtain yellow-green I TO powder. Example 5 (Example made by the present invention) (1) · Take 50 g of IT 0 powder prepared by the method of the above Example 2, put it into a 1 L ball mill pot, add 50 g of water, and prepare a solid content It was a 50 wt% slurry and was ball milled for 24 hours. (2) • The above slurry is dried to obtain a ball milled I TO powder. (3) • The powder was placed in a 1.6-inch mold, and cold-pressed and cold-pressed, respectively, to obtain a target blank of I TO. (4) • The above target green body is placed in a high-temperature sintering furnace, and the sintering conditions are as follows: Step 1 Step 2 Step 3 Step 4

(step 1 )以1〜1 5 °C /min的昇溫速率由室溫升溫 至 8 0 0 〜1 2 0 (Γ C ; (step 2)以0.5〜15 °C /min的昇溫速率由800〜12 0 0 °C升溫至1 4 0 0〜1 6 0 0 °C ,持溫3〜5 4小 時,此時並通入0.6〜1.5atm之氧氣; (step 3)以0·5〜15 °C /min的降溫速率由1400 〜1 6 0 0 °C降溫至8 0 0〜1 2 0 0 °C ,此時仍維 持0.6〜1.5atm之氧氣; (step 4 )使爐從8 0 0〜1 2 0 0 °C自然冷卻至室溫。 •經由上述之步驟可得到1 . 3吋之I TO靶材,經阿基(step 1) Increase the temperature from room temperature to 8 0 ~ 1 2 0 at a temperature increase rate of 1 ~ 1 5 ° C / min (Γ C; (Step 2) Change the temperature from 800 ~ 5 at a temperature increase rate of 0.5 ~ 15 ° C / min 12 0 0 ° C rises to 14 0 0 ~ 1 6 0 0 ° C, holding temperature for 3 ~ 5 4 hours, at this time, 0.6 ~ 1.5atm of oxygen is introduced; (step 3) with 0.5 · 15 ~ 15 ° The cooling rate of C / min is reduced from 1400 to 16 0 ° C to 8 0 to 1 2 0 0 ° C. At this time, the oxygen of 0.6 to 1.5 atm is still maintained; (step 4) The furnace is changed from 8 0 to 0 1 2 0 0 ° C natural cooling to room temperature. • 1.3 inches of I TO target material can be obtained through the above steps, after Archi

第14頁 538121 麵謝23__I月 日 修1 (11) 米得法測量之結果,靶材緻密度為9 6 %。 (習知製成之對照實施例) 分別取商業之氧化銦粉45g及氧化錫粉末5g,置 入1L之球磨罐中,加入50g水,配製成固含 5 0wt%之漿料,並球磨24小時。 崎 將上述之漿料予以乾燥,得到球磨之I τ〇粉末。 將該粉末置入1 · 6吋模具當中,分別經過冷壓及 冷均壓成形,得到I Τ〇之靶材生述。 將上述靶材生述置入高溫燒結爐,燒結條件如 下: 1 )以1〜1 5 °c / m i η的昇溫速率由室溫升溫 至 8 0 0 〜1 2 0 〇。。; ^ 2)以0·5〜15c/niin的昇溫速率由8〇〇 〜1 2 0 0 °C升溫至1 4 0 0〜1 6 0 0 °C,持溫 3〜54小時,此時並通入〇· 6〜1· 5a tm之 ^ 氧氣; 步驟二(step 3)以0.5〜15。(:/111丨11的降溫速率由14〇〇 〜1 6 0 0 °C降溫至8 0 0〜1 2 0 0 °C ,此時仍 維持0.6〜1.5atm之氧氣; 4 )使爐從8 0 0〜1 2 0 0 t自然冷卻至室溫。 將上述靶材生坯經燒結得到1 · 3吋之I TO靶材,經 ~基米得法測量之結果,靶材緻密度為9 5 %。 實 發明說明 施例六Page 14 538121 Thank you 23__I month day repair 1 (11) The result of Mead method measurement, the target density is 96%. (Comparative example prepared by conventional methods) 45 g of commercial indium oxide powder and 5 g of tin oxide powder were respectively placed in a 1 L ball mill tank, and 50 g of water was added to prepare a slurry with a solid content of 50 wt%, and ball milled. 24 hours. Saki The above slurry was dried to obtain a ball milled I τ〇 powder. The powder was placed in a 1.6-inch mold, and cold-pressed and cold-pressed, respectively, to obtain the target material of I TO. The target material was placed in a high-temperature sintering furnace, and the sintering conditions were as follows: 1) The temperature was raised from room temperature to 8 0 to 1 2 0 at a temperature increase rate of 1 to 15 ° c / m i η. . ^ 2) The temperature is raised from 800 ~ 1 2 0 0 ° C to 14 0 0 ~ 1 6 0 0 ° C at a heating rate of 0.5 ~ 15c / niin, and the holding temperature is 3 ~ 54 hours. Pass in 0.6 to 1.5 a tm of oxygen; Step 2 (step 3) is 0.5 to 15. (: The temperature reduction rate of / 111 丨 11 is reduced from 14000 ~ 1600 ° C to 80-10-1200 ° C, and at this time, the oxygen of 0.6 ~ 1.5atm is still maintained; 4) Make the furnace from 8 0 0 ~ 1 2 0 0 t Cool naturally to room temperature. The above target green body was sintered to obtain a 1.3-inch I TO target. As a result of the ~ Kimid method, the target density was 95%. Description of the invention

2 (4 ) · 步驟一( 步驟二( step step 步驟四(step 結 測 果比較 將前 電子探 $實施例五及實施例六所得之靶材,分別進行量 針微量分析EPMA(electron probe2 (4) · Step 1 (step 2). The results are compared. The target materials obtained in Example 5 and Example 6 are probed electronically, and the microprobe analysis of EPMA (electron probe) is performed.

第15頁 538121 _案號90123049_年月日__ 五、發明說明(12) microanalysis),觀察其中銦、錫的分佈狀態,第二圖及 第三圖分別為實施例五及實施例六靶材之ΕΡΜΑ圖,白點部 分為氧化錫之分佈,可發現經由本發明實施例二製備之粉 末所製備之靶材的氧化錫分佈較傳統固態方法所製備之靶 材還要來得好。 綜上所述之處理程序,本發明主要運用攪拌之方式促 進溶液之均勻化,然後再運用解膠過程之控制模式,抑制 氫氧化物發生聚結之現象,此由實施例二、三之本發明製 作過程與習知之製作過程,所得到之粒徑為1 4 2、2 3 5 0 nm ,差距為1 6. 5倍,由此可知,本發明之細緻度,當以實施 例一、二、四證明本發明所能使用之三種原物料都能達成 發明目的,再以前述之實施例五、六進一步製成成品後, 比對之結果,亦證實本發明比習知更具有更高之緻密度; 於是本發明之處理過程具有實用性,得以產生與習知不同 之進步效能,便能提供很好之使用性,故,本發明為具有 新穎性與首先創作性,為完全與習知不同方法,爰依法申 請專利以資保護。 以上所述為本發明之較佳實施例之詳細說明與圖式, 並非用來限制本發明,本發明之所有範圍應以下述之專利 範圍為準,凡專利範圍之精神與其類似變化之實施例與近 似結構,皆應包含於本發明之中。Page 15 538121 _Case No. 90123049_Year Month and Day__ V. Explanation of the invention (12) microanalysis), observe the distribution of indium and tin, the second and third figures are the fifth and sixth targets of Example 5 In the EPMA diagram of the material, the white dots are the distribution of tin oxide. It can be found that the tin oxide distribution of the target prepared by the powder prepared in Example 2 of the present invention is better than the target prepared by the traditional solid state method. In summary of the processing procedures described above, the present invention mainly uses stirring to promote the homogenization of the solution, and then uses the control mode of the degumming process to suppress the phenomenon of hydroxide coalescence. In the process of the invention and the conventional process, the particle size obtained is 14 2 2 35 0 nm, and the gap is 16. 5 times. From this, it can be known that the fineness of the present invention is based on the first and second embodiments. The fourth and the fourth prove that the three kinds of raw materials that can be used in the present invention can all achieve the purpose of the invention. After further manufacturing the finished product in the foregoing embodiments five and six, the comparison results also confirm that the present invention has a higher quality than the conventional one. Density; Therefore, the process of the present invention has practicability, which can produce a progressive effect different from the conventional one, and can provide good usability. Therefore, the present invention is novel and original, and complete and conventional Different methods apply for patent protection according to law. The above are detailed descriptions and drawings of the preferred embodiments of the present invention, and are not intended to limit the present invention. All the scope of the present invention shall be subject to the following patent scope. Any embodiment of the spirit of the patent scope and its similar changes And similar structures should be included in the present invention.

第16頁 538121 案號 90123049 曰 修正 圖式簡單說明 第一圖為本發明之水溶液製程流程圖。 第二圖為本發明之實施例五之Ε Ρ Μ Α圖。 第三圖為本發明之實施例六之Ε Ρ Μ A圖。Page 16 538121 Case No. 90123049 Amendment Brief Description of the Drawings The first figure is the flow chart of the aqueous solution manufacturing process of the present invention. The second figure is an EP MPA diagram of the fifth embodiment of the present invention. The third diagram is an EP M A diagram of Embodiment 6 of the present invention.

第17頁Page 17

Claims (1)

538121 案號90123049 年月日 修正 使銦 銦金銦 銦銦基 過 化硝 化將 化。化 化烷 經 氧濃 氧為 氧銦氧 氧含 指 作或 作別 作酸作。作或 係 製酸 製分 製硝製錫製水 材 法鹽 法物 法成法化法氨 靶 液濃 液合 液形液氯液為 廢 溶或 溶化 溶且溶成溶為 , 水酸 水錫 水,水形水液 成 以硝 以、 以酸以係以鹼 形 之濃 之物 之頌之物之中 中 述為 述合。述為述合述驟 液 所液 所化中所液所化所步 酸 項酸 項銦液項酸項錫項C 於 2中。1中酸4中4中1中。 溶 第其液第其於第其第其第其物 材。圍,合圍,溶圍,圍,圍,合 靶靶範法混範法錫範法範法範法化 廢鍍利方酸利方屬利方利方利方銨 將濺專之鹽專之金專之專之專之化 圍,之請末濃請末、請末請末請末氧 _材後申粉 '申粉銦申粉申粉申粉氫 *#靶用如錫酸如錫屬如錫如錫如錫之 由····· 、 六 3 4 5 6 7538121 Case No. 90123049 Revised to make indium, indium, gold, indium, indium and indium based nitration and nitrification. Condensation of alkane through oxygen concentration of oxygen to indium oxygen Oxygen is used as an acid or as an acid. It is made or made of acid, made of nitrate, made of tin, made of water, made of salt, made of material, made of law, method of ammonia, concentrated solution of liquid, liquid, and liquid chlorine. The solution is waste or dissolved, and dissolved into water. Water, water-shaped liquids are described in terms of nitrate, acid, and the eulogy of thick substances in the form of alkali. It is described as the synthesizing the sudden liquid, the liquid, the liquid, and the liquid, and the acid, the acid, the acid, the indium, the acid, and the tin, C. 1 in acid 4 in 4 in 1 in. Dissolve other liquids first than other materials. Enclose, enclose, dissolve encircle, encircle, encircle, target, target, method, mixed, method, method, method, method, method, method, method, method, method, method, method Specialize in the special environmen, please do n’t be thick, please do n’t ask for the last__After the material, apply for powder, apply for powder, apply for powder, apply for powder, apply powder for hydrogen * # target use, such as stannic acid, such as tin Tin as Tin as Tin by ... 6 3 4 5 6 7 銦氧 銦。化、 化 化氫 化作氧酸 氧 氧為 氧動作鹽 作 作物 作之製、 製 製合 製拌法酸 法 法化 法攪液硝 液 液銨 液入溶為 溶 溶化 溶加水液 水 水氧 水能以酸 以 以氮 以更之中 之 之之 之中述驟 述 述基 述驟所步 所 所烷 所步項e 項 第19頁 538121 _案號90123049_年月曰 修正_ 六、申請專利範圍 銦錫粉末之方法,其中f步驟乾燥之方法為烘箱直接 乾燥或利用喷霧乾燥機予以乾燥。 1 2 · —種以水溶液法製作氧化銦錫粉末之方法,其步驟 為: a. 溶解:將含有金屬銦、金屬錫之物質分別溶於水 中; b. 混合:將上述兩溶液充分混合,並攪拌之; c. 沈澱:加入鹼液至混合溶液,調至適當之p Η值,使 原本澄清之溶液產生沈澱; d. 過濾、水洗:將上述溶液經減壓過濾,並用純水重 新打散滤餅,如此動作重複數遍,形成水洗後之懸 浮液; e. 解膠:加入酸液至水洗後之懸浮液,調至適當之 pH值,並攪拌予以解膠; f. 乾燥:將上述解膠後之懸浮液予以乾燥,得到白色 之氫氧化銦/錫(Indium Tin Hydroxide) 之粉末; g. 煆燒:將白色之氫氧化銦/錫之粉末置入高溫爐, 經適當之升溫速率、持溫溫度及持溫時間,煆燒成 黃綠色之氧化銦錫粉末(Indium Tin Oxide)粉 末。Indium Oxide Indium. Hydrogenation, oxidization, hydrogenation, oxygenation, oxygenation, oxygenation, oxygenation, salt production for crops, production, mixing, mixing, acid method, chemical method, stirring, nitrate, liquid, ammonium Can use acid to nitrogen and more of which can be used to describe the basic steps and the steps to be carried out in step e, page 19, 538121 _ Case No. 90123049 _ month and month amendments _ 6, patent application In the method of indium tin powder, the method of drying in step f is direct drying in an oven or drying with a spray dryer. 1 2 · A method for preparing an indium tin oxide powder by an aqueous solution method, the steps are as follows: a. Dissolving: dissolving a substance containing metal indium and metal tin separately in water; b. Mixing: thoroughly mixing the above two solutions, and Stir; c. Precipitation: add lye to the mixed solution, adjust to an appropriate p Η value, so that the originally clarified solution will precipitate; d. Filtration, washing: The above solution is filtered under reduced pressure, and re-dispersed with pure water Filter cake, repeat this action several times to form a water-washed suspension; e. Degumming: add acid to the water-washed suspension, adjust to the appropriate pH value, and stir to degumming; f. Drying: the above The de-glued suspension is dried to obtain a white powder of Indium Tin Hydroxide; g. Burning: Put the white powder of Indium Hydroxide / Tin into a high-temperature furnace and pass an appropriate heating rate , Holding temperature and holding time, sintered into yellow-green indium tin oxide powder (Indium Tin Oxide) powder. 第20頁Page 20
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853285A (en) * 2021-02-01 2021-05-28 广西晶联光电材料有限责任公司 Preparation method of indium oxide tungsten-doped target material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112853285A (en) * 2021-02-01 2021-05-28 广西晶联光电材料有限责任公司 Preparation method of indium oxide tungsten-doped target material
CN112853285B (en) * 2021-02-01 2022-10-21 广西晶联光电材料有限责任公司 Preparation method of indium oxide tungsten-doped target material

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